NCSR DEMOKRITOS

Preshower PRR July 5-6 2001 1

NCSR DEMOKRITOS

Production Center : Institute of Microelectronics (IMEL)Regional Center : Institute of Nuclear Physics (INP)

•Si Detector development for the Preshower in DEMOKRITOS is a joint activity between the two institutes initiated in 1997

•Design by INP

• Fabrication by IMEL

• Module construction, quality control and test by INP


NCSR DEMOKRITOSshort review

• Three versions tested

• 60 mm x 60mm preshower detector • Ten wafers (4-inch) processed (1997)• Good test structures but problematic preshower detectors

Scribing line

60 000 μm +0, -10 μm

1120 μm 1810 μm

875 μm145 μm

1650 μm

Guard Ring

Strip 1 Strip 2 Strip 32 Guard Ring

AlSiO2

p+ junction implantn type Si, 300 μmn+ ohmic implant

Scribing line

60 000 μm +0, -10 μm60 000 μm +0, -10 μm

1120 μm1120 μm 1810 μm1810 μm

875 μm875 μm145 μm145 μm

1650 μm1650 μm

Guard RingGuard Ring

Strip 1 Strip 2 Strip 32 Guard RingGuard Ring

AlSiO2SiO2

p+ junction implantn type Si, 300 μmn type Si, 300 μmn+ ohmic implant



1700 μm

1740 μm

1810 μm

...

56110 (1810 x31)μm

870

μm

1945 μm

230

μm

170

μm

150

μm

105

μm 350 μm

60000 μm

AlSiO2

p+n type Si, 300 μmn+

...

1075 μm

1700 μm

1740 μm

1810 μm

...

56110 (1810 x31)μm

870

μm

1945 μm

230

μm

170

μm

150

μm

105

μm 350 μm

60000 μm

AlSiO2


...

1075 μm

• 60mm x 60mm preshower detectors with n+ guard ring• Fifteen wafers processed (1999)• Good test structures, problematic preshower detectors



Strip current, 100 V

1

10

100

1000

10000

0 8 16 24 32

Strip#]

Cur

rent

[nA

]

GTD99/9-A4

GTD99/9-A3

•Detectors from the 1999 batch

1,00

E-0

1

9,00

E-0

1

3,60

E+0

1

7,60

E+0

1

1,16

E+0

2

1,56

E+0

2

1,96

E+0

2

S1S5S9

S13S17S21S25S29

1,00E-11

1,00E-10

1,00E-09

1,00E-08

1,00E-07

1,00E-06

1,00E-05

Dar

k cu

rren

t (A

)

Strip

Wafer 1: full preshower

• Detector from the 1997 batch

Both fabricated with a 3-inch mask aligner



1780 μm

1800 μm

1900 μm

...

58900 (1900 x31)μm

900 μm

1945 μm

100μ

m

325μ

m

63000 μm

AlSiO2


...

1150 μm

100μ

m

100μ

m

150μ

m

375μ

m

1780 μm

1800 μm

1900 μm

...

58900 (1900 x31)μm

900 μm

1945 μm

100μ

m

325μ

m

63000 μm

AlSiO2


...

1150 μm

100μ

m

100μ

m

150μ

m

375μ

m

• 63 mm x 63 mm detectors fabricated with a new 4-inch aligner (2000)• Two batches (V,Z) of 10 detectors each one were processed • Yield 50%•A new batch of 15 detectors is currently in progress (june - july 2001)


NCSR DEMOKRITOS2000 processing

IV (Detector ID : V8)

0,00E+00

2,00E-07

4,00E-07

6,00E-07

8,00E-07

1,00E-06

1,20E-06

0,00E+00 1,00E+02 2,00E+02 3,00E+02 4,00E+02 5,00E+02

Voltage (in volts)

Lea

kag

e C

urr

ent

(in

A) Sum of 32 strips

32 individual strips

Detector on wafer without passivation


Fabrication Batch V

0,00E+00

1,00E-05

2,00E-05

3,00E-05

4,00E-05

5,00E-05

0,00

E+00

5,00

E+01

1,00

E+02

1,50

E+02

2,00

E+02

2,50

E+02

3,00

E+02

3,50

E+02

4,00

E+02

4,50

E+02

5,00

E+02

Voltage (in volts)

Lea

kag

e C

urr

ent

(in

A)


Total leakage current for seven detectors : batch V, detectors on waferwithout passivation

(10 μA, 300 V) Detectors :V2,V3,V5,V8,V9,V10,V11


Individual strips from five detectors

0,00E+00

5,00E-07

1,00E-06

1,50E-06

2,00E-06

2,50E-06

0,00E+00 1,00E+02 2,00E+02 3,00E+02 4,00E+02 5,00E+02 6,00E+02

Bias Voltage (in volts

Lea

cag

e C

urr

ent

( in

A)


Passivation: Low Temperature Oxidation ~ 0.3 μm SiO2

•Measurements for 5 detectors after passivation (4 detectors from batch V, 1 from batch Z)•3 detectors on wafer •2 off wafer

One strip with irregularbehavior excluded

Detectors V1,V3,V9V11, Z2



Full Depletion Voltage

50

55

60

65

70

75

80

85

0 5 10 15 20 25 30

Strip

Full

Dep

letio

n V

olta

ge (i

n vo

lts)

V1

V3

V9

V11

Z2



Leakage Current at Full Depletion

1,00E-09

1,00E-08

1,00E-07

1,00E-06

1,00E-05

1,00E-04

1,00E-03

1,00E-02

1,00E-01

1,00E+00

0 5 10 15 20 25 30

Strip

Lea

kag

e C

urr

ent

(in

A)

V1

V3

V9

V11

Z2

Plasma etching during passivation poses problems



Leakage Current at Full Depletion + 150 V

1,00E-09

1,00E-08

1,00E-07

1,00E-06

1,00E-05

1,00E-04

1,00E-03

1,00E-02

1,00E-01

1,00E+00

0 5 10 15 20 25 30

Strip

Lea

kag

e C

urr

ent

(in

A)

V1

V3

V9

V11

Z2



Break Down Voltage

490

492

494

496

498

500

502

504

506

508

510

0 5 10 15 20 25 30

Strip

Bre

ak D

ow

n V

olt

age

(in

vo

lts)

V1

V3

V9

V11

Z2


NCSR DEMOKRITOS: IMELdetector dicing

Wafer saw machine : Micro Automation 602M

Y1

Y2

X1 X2Detector Y1 Y2 X1 X2

1 62900 62900 62880 62910 2 62900 62920 62910 62920

Z3 62960 62880 62990 63030 V1 62920 62910 62910 62910 V3 63010 62970 63030 63030

Dimensions measured with ~5 μm accuracy


1160μm to the p+ of the first strip

63000 μm to the other end of the detector

Center of scribing line is 5 μm from detector edge

Normally, during scribing,the center of the scribing saw will beplaced here. The scribing tool is 50 μmthick. So, in average, an estimated detector width of 62960 μm is expected after dicing

Eye

NCSR DEMOKRITOS : IMELdetector dicing


NCSR DEMOKRITOSdetector production plans

DEM

Total number 1000Preproduction 1999

20002001 37

Production 20002001 402002 3202003 3202004 320

Yield preproduction (%) 50Yield production (%) ?Tests on wafers yesWafer # before cutting yes

Passivation SiO2

Thickness (m) 0,3CuttingYield of cutting (%) ?Individual packagingBoxes


NCSR DEMOKRITOS :IMELequipment

• Wet bench (3) cleaning of Si wafers

•Medium current ion implanter EATON NV-3206 (20-200 keV)

•Low Pressure Chemical Vapor Deposition TEMPRESS

• 6-inch double side mask aligner (Carl Suss)

•Thermal processing equipment TEMPRESS


NCSR DEMOKRITOS :INPavailable space & equipment

•Space : 80 m2 • Temperature & humidity control (COMPTROL 4000: SULTZ)

• Prober : Carl Suss PA 150 enclosed on a light tight box•CV : HP4092A•IV : Keihley 6517 current meter & voltage source

• Pick and place system : FRITSCH


NCSR DEMOKRITOS :INPPreshower specific equipment

• 32 Switch board

• Probe card

•CRISTAL software installed and tested


NCSR DEMOKRITOS :INPμ-module assembly

Work on μ-module assembly goes in parallel and in close collaboration with Dubna






NCSR DEMOKRITOS :INPCRISTAL data base

• CRISTAL initially installed in March 2000• Two machines running Win2K

One machine with CRISTAL (Orbix, Objetivity and CRISTAL LC)acting as data base server and operator workstatioA second machine runs Labview and communicates with physical

instruments• VI’s modified for the local instruments ( Keithley 6517 and HP 4192A LF)• Now the system runs with PRESHOWER_Config_v31.DB• Barcode reader purchased in April 2001

Dummy barcodes printed by using a shareware program (Label Magic v1.1) and registered by CRISTAL

• Latest upgrade in CRISTAL (April 2001) permitted successful duplication of dummy data to the Central Storage at CERN


NCSR DEMOKRITOS :INPConclusions

•Time per module for construction, quality control and testing : ~ 3 hours

•Man power for construction, quality control and testing : -two technicians for μ-module assembly -one person for μ-module testing

• Detectors : 1000 to be provided by the Greek groups and preferably fabricated in Greece (Institute of Microelectronics)

alternative providers identified : ELMA

• Construction, QC and testing of 500 modules by the Preshower group of the INP

Documents

NCSR DEMOKRITOS