N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET …ftp01.cystekec.com/MTC5806Q8.pdfCYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.06.26 Page

CYStech Electronics Corp.

Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.06.26 Page No. : 1/13

MTC5806Q8 CYStek Product Specification

N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

MTC5806Q8 N-CH P-CH BVDSS 60V -60V ID 4.5A -3.5A RDSON(typ.) @VGS=(-)10V 37mΩ 70mΩ RDSON(typ.) @VGS=(-)4.5V 42mΩ 93mΩ

Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package

Equivalent Circuit Outline

MTC5806Q8

G：Gate S：Source D：Drain

SOP-8

Ordering Information

Device Package Shipping

MTC5806Q8-0-T3-G SOP-8 (Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name




Absolute Maximum Ratings (Ta=25°C) Limits Parameter Symbol N-channel P-channel Unit

Drain-Source Breakdown Voltage BVDSS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current @TA=25 °C (Note 2) ID 4.5 -3.5 A Continuous Drain Current @TA=70 °C (Note 2) ID 3.6 -2.8 A Pulsed Drain Current (Note 1) IDM 20 -20 A Power Dissipation for Dual Operation 2

1.6 (Note 2) Power Dissipation for Single Operation

PD 0.9 (Note 3)

W

Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C

Thermal Data

Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 40 °C/W

78 (Note 2) °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 135 (Note 3) °C/W

Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.

3.Surface mounted on minimum copper pad, pulse width≤10s.

N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions

Static BVDSS 60 - - V VGS=0, ID=250μA VGS(th) 1.0 1.7 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0

- - 1 VDS=48V, VGS=0 IDSS - - 10 μA VDS=40V, VGS=0, Tj=55°C

- 37 58 VGS=10V, ID=4.5A *RDS(ON) - 42 60 mΩ VGS=4.5V, ID=4A *GFS - 6 - S VDS=10V, ID=4.5A

Dynamic Ciss - 1173 - Coss - 45 - Crss - 35 -

pF VDS=25V, VGS=0, f=1MHz

*td(ON) - 8 20 *tr - 12 18

*td(OFF) - 30 35 *tf - 7 15

ns VDS=30V, ID=1A, VGS=10V, RG=6Ω

*Qg - 14 16 *Qgs - 3.9 - *Qgd - 4.7 -

nC VDS=30V, ID=4.5A, VGS=10V




Source-Drain Diode *VSD - 0.75 1.0 V VGS=0V, IS=1.3A *IS - - 1.3 A

*ISM - - 2.6 A

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions

Static BVDSS -60 - - V VGS=0, ID=-250μA VGS(th) -1.0 -1.8 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V, VDS=0

- - -1 VDS=-48V, VGS=0 IDSS - - -10 μA VDS=-40V, VGS=0, Tj=55°C

- 70 90 VGS=-10V, ID=-3.5A *RDS(ON) - 93 125 mΩ VGS=-4.5V, ID=-3A *GFS - 5 - S VDS=-10V, ID=-3.5A

Dynamic Ciss - 940 - Coss - 49 - Crss - 35 -

pF VDS=-30V, VGS=0, f=1MHz

*td(ON) - 6 13 ns *tr - 8 18

*td(OFF) - 26 31 *tf - 11 20

ns VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω

*Qg - 10 15 *Qgs - 3 - *Qgd - 3.1 -

nC VDS=-30V, ID=-3.5A, VGS=-10V

Source-Drain Diode *VSD - -0.75 -1.0 V VGS=0V, IS=-1.3A *IS - - -1.3

*ISM - - -2.6 A

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%




Recommended Soldering Footprint




Typical Characteristics : Q1( N-channel )

Typical Output Characteristics

0

5

10

15

20

0 1 2 3 4 5VDS, Drain-Source Voltage(V)

I D, D

rain

Cur

rent(

A)

VGS=3V

10V, 9V, 8V, 7V, 6V, 5V, 4V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-60 -20 20 60 100 140 180

Tj, Junction Temperature(°C)

BV

DSS,

Nor

mal

ized

Dra

in-S

ourc

e

Bre

akdo

wn

Vol

tage

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01 0.1 1 10 100ID, Drain Current(A)

RD

S(O

N), S

tatic

Dra

in-S

our

ce O

n-Sta

te

Res

ista

nce

(mΩ

)

VGS=10V

VGS=2.5V

VGS=3V

VGS=4.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8 1IDR, Reverse Drain Current(A)

VS

D, So

urc

e-D

rain

Volta

ge(V

)

0

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

10

20

30

40

50

60

70

80

90

100

0 2 4 6 8 10

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -40 -20 0 20 40 60 80 100 120 140 160


RD

S(O

N), N

orm

aliz

ed S

tatic

Dra

in-

Sourc

e O

n-S

tate

Res

ista

nce

VGS=10V, ID=4.5A

RDS(ON)@Tj=25°C : 36mΩ typ.

VGS, Gate-Source Voltage(V)

RD

S(O

N), S

tatic

Dra

in-S

ourc

e O

n-

Stat

e R

esis

tanc

e(m

Ω) ID=4.5A




Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100VDS, Drain-Source Voltage(V)

Cap

acitan

ce--

-(pF

)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-60 -20 20 60 100 140


VG

S(t

h), N

orm

aliz

ed T

hre

shol

d V

olta

ge

ID=250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10ID, Drain Current(A)

GF

S, Forw

ard T

ransf

er A

dm

itta

nce(

S)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16

Qg, Total Gate Charge(nC)

VG

S, G

ate-

Sourc

e V

oltag

e(V

)

ID=4.5A

VDS=48V

VDS=30V

VDS=12V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100VDS, Drain-Source Voltage(V)

I D, D

rain

Curr

ent(

A)

DC

10ms

1ms

100μsRDS(ON)

Limite

TA=25°C, Tj=150°C, VGS=10V

RθJA=78°C/W,Single Pulse

1s

100m

Maximum Drain Current vs Junction Temperature

0

1

2

3

4

5

6

25 50 75 100 125 150 175

TJ, Junction Temperature(°C)

I D, M

axim

um

Dra

in C

urr

ent(

A)

TA=25°C, VGS=10V

RθJA=78°C/W




Typical Characteristics(Cont.) : Q1( N-channel)

Typical Transfer Characteristics

0

5

10

15

20

25

30

35

40

0 2 4 6 8 10 12VGS, Gate-Source Voltage(V)

I D, D

rain

Curr

ent (

A)

VDS=10V

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°CθJA=78°C/W

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t1, Square Wave Pulse Duration(s)

r(t)

, N

orm

aliz

ed E

ffec

tive

Tra

nsie

nt T

herm

al

Res

ista

nce

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=78°C/W




Typical Characteristics : Q2( P-channel) Typical Output Characteristics

0

5

10

15

20

0 1 2 3 4 5-VDS, Drain-Source Voltage(V)

-ID, D

rain

Curr

ent (

A)

-10V, -9V, -8V, -7V,-6V,-5V

VGS=-3V

VGS=-4V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-60 -20 20 60 100 140 180


-BV

DSS,

Nor

mal

ized

Dra

in-S

ourc

e

Bre

akdo

wn

Vol

tage

ID=-250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01 0.1 1 10

-ID, Drain Current(A)

RD

S(o

n),

Sta

tic

Dra

in-S

ourc

e O

n-S

tate

Res

ista

nce(

mΩ

)

VGS=-4.5V

VGS=-3V

VGS=-10V

Source Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8

-IS, Source Drain Current(A)

-VS

D,

Sou

rce-

Dra

in V

olta

ge(V

)

10

VGS=0V

Tj=25°C

Tj=150°C

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 10

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -20 20 60 100 140 180


RD

S(o

n),

Norm

aliz

ed S

tatic

Dra

in-S

our

ce

On-S

tate

Res

ista

nce

VGS=-10V, ID=-3.5A

RDS(ON)@Tj=25°C : 69mΩ typ.

-VGS, Gate-Source Voltage(V)

RD

S(o

n), S

tatic

Dra

in-S

ourc

e O

n-S

tate

Res

ista

nce

(mΩ

)

ID=-3.5A




Typical Characteristics(Cont.) : Q2(P-channel)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100-VDS, Drain-Source Voltage(V)

Cap

acita

nce

---(

pF)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-60 -20 20 60 100 140


-VG

S(t

h), T

hre

shol

d V

oltag

e(V

) ID=-250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10-ID, Drain Current(A)

GFS

, For

war

d T

ransf

er A

dm

itta

nce

(S)

VDS=-10V

Pulsed

TA=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0 2 4 6 8 10 12Qg, Total Gate Charge(nC)

-VG

S, G

ate-

Sour

ce V

olta

ge(V

)

VDS=-48V

ID=-3.5A

VDS=-30V

VDS=-12V

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100-ID, Drain-Source Voltage(V)

-ID, D

rain

Curr

ent(

A)

DC

10ms

100m

100μs

TA=25°C, Tj=150°C, VGS=-10VθJA=78°C/W, Single Pulse

1s

1ms

RDS(ON)

Limited

Maximum Drain Current vs Junction Temperature

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

25 50 75 100 125 150 175


-ID, M

axim

um D

rain

Cur

rent(

A)

TA=25°C, VGS=-10V

RθJA=78°C/W




Typical Characteristics(Cont.) : Q2(P-channel)

Typical Transfer Characteristics

0

5

10

15

20

25

30

35

40

0 2 4 6 8 10-VGS, Gate-Source Voltage(V)

-ID, D

rain

Curr

ent (A

)

VDS=-10V

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°CθJA=78°C/W

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

t1, Square Wave Pulse Duration(s)

r(t)

, N

orm

aliz

ed E

ffec

tive

Tra

nsie

nt

The

rmal

Res

ista

nce

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=50°C/W




Reel Dimension

Carrier Tape Dimension




Recommended wave soldering condition Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate

(Tsmax to Tp) 3°C/second max. 3°C/second max.

Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)

100°C 150°C

60-120 seconds

150°C 200°C

60-180 seconds Time maintained above: −Temperature (TL) − Time (tL)

183°C

60-150 seconds

217°C

60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C

Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds

Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.




SOP-8 Dimension

8-Lead SOP-8 Plastic Package

CYStek Package Code: Q8

5806SS □□□□

Marking:

Date Code

Device Name

*: Typical

Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. DIM Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157

A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244 A2 1.350 1.550 0.053 0.061 e *1.270 *0.050 b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200

Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Documents

N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET …ftp01.cystekec.com/MTC5806Q8.pdfCYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : 2012.06.26 Page