MTC2590V8 N-CH P-CHftp01.cystekec.com/MTC2590V8.pdfEquivalent Circuit Outline Ordering Information Device Package Shipping MTC2590V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free

CYStech Electronics Corp.

Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : 2020.02.07 Page No. : 1/13

MTC2590V8 CYStek Product Specification

N- AND P-Channel Logic Level Enhancement Mode MOSFET

MTC2590V8

Features • Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free lead plating and halogen-free package

Equivalent Circuit Outline

Ordering Information Device Package Shipping

MTC2590V8-0-T6-G DFN3×3

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

MTC2590V8

DFN3×3

G：Gate S：Source D：Drain Pin 1

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

N-CH P-CH

BVDSS 30V -30V

ID@VGS=10V(-10V), TA=25°C 6.0A -5.0A

ID@VGS=10V(-10V), TC=25°C 8.2A -6.8A

RDSON@VGS=10V(-10V) typ. 16 mΩ 38 mΩ

RDSON@VGS=4.5V(-4.5V) typ. 28 mΩ 61 mΩ




Absolute Maximum Ratings (TC=25C, unless otherwise noted)

Parameter Symbol Limits

Unit N-channel P-channel

Drain-Source Breakdown Voltage BVDSS 30 -30 V

Gate-Source Voltage VGS ±20 ±20

Continuous Drain Current *2

TA=25 C, VGS=10V (-10V) IDSM

6 -5

A

TA=70 C, VGS=10V (-10V) 4.8 -4

Continuous Drain Current TC=25 C, VGS=10V (-10V)

ID 8.2 -6.8

TC=100 C, VGS=10V (-10V) 5.2 -4.3

Pulsed Drain Current * 1 IDM 30 -30

Total Power

Dissipation

TA=25°C, Single device operation

PDSM

1.5 *2

W

TA=70°C, Single device operation 0.96 *2

TA=25°C, Single device value at dual operation 1.24 *2

TA=70°C, Single device value at dual operation 0.79 *2

TC=25°C PD

2.8

TC=100°C 1.1

Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 C

Thermal Data Parameter Symbol Value Unit Max. Thermal Resistance, Junction-to-ambient, single device operation

Rth,j-a 84 *2

C/W Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation 101 *2 Max. Thermal Resistance, Junction-to-case Rth,j-c 45

Note : 1. Pulse width limited by maximum junction temperature.

2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.

216°C/W when mounted on a minimum pad of 2 oz. copper.

N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS 30 - - V

VGS=0V, ID=250μA

VGS(th) 1 1.8 2.5 VDS=VGS, ID=250μA

IGSS - - ±100 nA VGS=±20V, VDS=0V

IDSS - - 1

μA VDS=30V, VGS=0V

- - 10 VDS=24V, VGS=0V, Tj=70C

*RDS(ON) - 16 23

m VGS=10V, ID=6A

- 28 40 VGS=4.5V, ID=4A

*GFS - 7 - S VDS=5V, ID=6A

Dynamic

Ciss - 758 -

pF VDS=20V, VGS=0V, f=1MHz Coss - 55 -

Crss - 61 -

*td(ON) - 8 -

ns

VDS=15V, ID=1A, VGS=10V, RG=6Ω

*tr - 7 -

*td(OFF) - 24 -

*tf - 13 -




*Qg - 11 -

nC VDS=15V, ID=6A, VGS=10V *Qgs - 2.9 -

*Qgd - 3.2 -

Body Diode

*VSD - 0.78 1.2 V VGS=0V, IS=2.3A

*trr - 29 - ns IS=5A, VGS=0V, dI/dt=100A/μs

*Qrr - 10 - nC

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

P-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)

Symbol Min. Typ. Max. Unit Test Conditions

Static

BVDSS -30 - - V

VGS=0, ID=-250μA

VGS(th) -1.0 -1.7 -2.5 VDS=VGS, ID=-250μA

IGSS - - ±100 nA VGS=±20V, VDS=0V

IDSS - - -1

μA VDS=-30V, VGS=0V

- - -10 VDS=-24V, VGS=0V, Tj=70C

*RDS(ON) - 38 50

m VGS=-10V, ID=-5A

- 61 80 VGS=-4.5V, ID=-4A

*GFS - 7 - S VDS=-5V, ID=-5A

Dynamic

Ciss - 838 -

pF VDS=-20V, VGS=0V, f=1MHz Coss - 64 -

Crss - 65 -

*td(ON) - 9 -

ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω *tr - 7 -

*td(OFF) - 40 -

*tf - 13 -

*Qg - 14 -

nC VDS=-15V, ID=-5A, VGS=-10V *Qgs - 3.6 -

*Qgd - 3.3 -

Body Diode

*VSD - -0.82 -1.2 V VGS=0V, IS=-2.3A

*trr - 32 - ns IS=-4.5A, VGS=0V, dI/dt=100A/μs

*Qrr - 13.5 - nC

*Pulse Test : Pulse Width 300μs, Duty Cycle2%




Recommended Soldering Footprint

unit : mm




Typical Characteristics : Q1( N-channel )

Typical Output Characteristics

0

5

10

15

20

25

30

0 1 2 3 4 5 6 7 8 9 10VDS, Drain-Source Voltage(V)

I D, D

rain

Cur

rent

(A)

VGS=3V

10V, 9V, 8V, 7V, 6V, 5V, 4V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

BV

DSS

, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

ID=250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01 0.1 1 10 100

ID, Drain Current(A)

RD

S(on

), S

tati

c D

rain

-Sou

rce

On-

Sta

te

Res

ista

nce(

mΩ

) VGS=3.5VVGS=3V

VGS=10V

VGS=4V VGS=4.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8 10

IDR, Reverse Drain Current(A)

VS

D, S

ourc

e-D

rain

Vol

tage

(V)

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 10

VGS, Gate-Source Voltage(V)

RD

S(o

n), S

tatic

Dra

in-S

ourc

e O

n-St

ate

Res

ista

nce(

mΩ

)

ID=6A

ID=4A

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

-60 -20 20 60 100 140 180


RD

S(o

n), N

orm

aliz

ed S

tatic

Dra

in-

Sour

ce O

n-St

ate

Res

ista

nce

VGS=4.5V, ID=4A

VGS=10V, ID=6A




Typical Characteristics(Cont.) : Q1( N-channel)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100VDS, Drain-Source Voltage(V)

Cap

acita

nce-

--(p

F)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-60 -40 -20 0 20 40 60 80 100 120 140 160


VG

S(t

h), N

orm

aliz

edT

hres

hold

Vol

tage

ID=250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10

ID, Drain Current(A)

GF

S, F

orw

ard

Tra

nsfe

r A

dmitt

ance

(S)

VDS=10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0 2 4 6 8 10 12

Qg, Total Gate Charge(nC)

VG

S, G

ate-

Sour

ce V

olta

ge(V

) VDS=15V

ID=6A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100

VDS, Drain-Source Voltage(V)

I D, D

rain

Cur

rent

(A)

DC

10ms

100ms

1ms

100μs

TA=25°C, Tj=150°C,

VGS=10V, RθJA=84°C/W

Single Pulse

RDS(ON)

Limited

1s

Maximum Drain Current vs JunctionTemperature

0

1

2

3

4

5

6

7

25 50 75 100 125 150 175Tj, Junction Temperature(°C)

I D, M

axim

um D

rain

Cur

rent

(A)

TA=25°C, VGS=10V, RθJA=84°C/W




Typical Characteristics(Cont.) : Q1( N-channel)

Typical Transfer Characteristics

0

5

10

15

20

25

30

0 1 2 3 4 5VGS, Gate-Source Voltage(V)

I D, D

rain

Cur

rent

(A)

VDS=10V

Single Pulse Power Rating, Junction to Ambient

0

20

40

60

80

100

120

140

160

180

200

0.0001 0.001 0.01 0.1 1 10 100Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°C

θJA=84°C/W

Transient Thermal Response Curves

0.001

0.01

0.1

1

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t1, Square Wave Pulse Duration(s)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*ZθJC(t)

4.RθJA=84°C/W




Typical Characteristics : Q2( P-channel)

Typical Output Characteristics

0

5

10

15

20

25

30

0 1 2 3 4 5 6 7 8 9 10-VDS, Drain-Source Voltage(V)

-ID,

Dra

in C

urre

nt (

A)

10V, 9V, 8V, 7V, 6V, 5V

-VGS=3V

-VGS=4V

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1

1.2

1.4

1.6

-75 -50 -25 0 25 50 75 100 125 150 175


-BV

DSS

, N

orm

aliz

ed D

rain

-Sou

rce

Bre

akdo

wn

Vol

tage

ID=-250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01 0.1 1 10 100-ID, Drain Current(A)

RD

S(on

), S

tatic

Dra

in-S

ourc

e O

n-St

ate

Res

ista

nce(

mΩ

)

VGS=-3V

VGS=-10V

VGS=-4V

VGS=-4.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1

1.2

0 2 4 6 8 10

-IDR, Reverse Drain Current (A)

-VSD

, Sou

rce-

Dra

in V

olta

ge(V

)

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

20

40

60

80

100

120

140

160

180

200

0 2 4 6 8 10

-VGS, Gate-Source Voltage(V)

RD

S(O

N), S

tatic

Dra

in-S

ourc

e O

n-St

ate

Res

ista

nce(

mΩ

)

ID=-5A

ID=-4A

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

1.6

-60 -20 20 60 100 140 180


RD

S(O

N), N

orm

aliz

ed S

tatic

Dra

in-

Sour

ce O

n-St

ate

Res

ista

nce

VGS=-4.5V, ID=-4A

VGS=-10V, ID=-5A




Typical Characteristics(Cont.) : Q2(P-channel)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1 1 10 100-VDS, Drain-Source Voltage(V)

Cap

acita

nce-

--(p

F)

Coss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-60 -40 -20 0 20 40 60 80 100 120 140 160


-VG

S(t

h),N

orm

aliz

ed T

hres

hold

Vol

tage

ID=-250μA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001 0.01 0.1 1 10

-ID, Drain Current(A)

GFS

, For

war

d T

rans

fer

Adm

ittan

ce-(

S)

VDS=-10V

Pulsed

Ta=25°C

Gate Charge Characteristics

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16

Qg, Total Gate Charge(nC)

-VG

S, G

ate-

Sour

ce V

olta

ge(V

) VDS=-15V

ID=-5A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01 0.1 1 10 100-VDS, Drain-Source Voltage(V)

-ID, D

rain

Cur

rent

(A

)

DC

10ms

100ms

1ms

100μs

RDS(ON)

Limited

TA=25°C, Tj=150°C,

VGS=-10V, RθJA=84°C/W

Single Pulse

1s

Maximum Drain Current vs JunctionTemperature

0

1

2

3

4

5

6

25 50 75 100 125 150 175Tj, Junction Temperature(°C)

-ID, M

axim

um D

rain

Cur

rent

(A)

TA=25°C, VGS=-10V, RθJA=84°C/W




Typical Characteristics(Cont.) : Q2(P-channel)

Typical Transfer Characteristics

0

5

10

15

20

25

30

0 1 2 3 4 5VGS, Gate-Source Voltage(V)

I D, D

rain

Cur

rent

(A)

VDS=10V

Single Pulse Power Rating, Junction to Ambient

0

20

40

60

80

100

120

140

160

180

200

0.0001 0.001 0.01 0.1 1 10 100Pulse Width(s)

Pow

er (

W)

TJ(MAX)=150°C

TA=25°C

θJA=84°C/W

Transient Thermal Response Curves

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, Square Wave Pulse Duration(s)

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*ZθJC(t)

4.RθJA=84°C/W




Reel Dimension

Carrier Tape Dimension

Pin #1




Recommended wave soldering condition Product Peak Temperature Soldering Time

Pb-free devices 260 +0/-5 C 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate

(Tsmax to Tp) 3C/second max. 3C/second max.

Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)

100C

150C 60-120 seconds

150C

200C 60-180 seconds

Time maintained above: −Temperature (TL) − Time (tL)

183C 60-150 seconds

217C 60-150 seconds

Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C

Time within 5C of actual peak temperature(tp)

10-30 seconds 20-40 seconds

Ramp down rate 6C/second max. 6C/second max.

Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.




DFN3×3 Dimension

DIM Millimeters Inches

DIM Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A 0.650 0.850 0.026 0.033 b 0.200 0.400 0.008 0.016

A1 0.152 REF 0.006 REF e 0.550 0.750 0.022 0.030

A2 0.000 0.050 0.000 0.002 L 0.300 0.500 0.012 0.020

D 2.900 3.200 0.114 0.126 L1 0.180 0.480 0.007 0.019

D1 0.935 1.135 0.037 0.045 L2 0.130 TYP 0.005 TYP

D2 0.280 0.480 0.011 0.019 L3 0.130 TYP 0.005 TYP

E 2.900 3.200 0.114 0.126 H 0.300 0.515 0.012 0.020

E1 3.150 3.450 0.124 0.136 θ 9° 13° 9° 13°

E2 1.535 1.980 0.060 0.078

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

Lead: pure tin plated.

Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

CYStek reserves the right to make changes to its products without notice.

CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Marking:

Date

Code

S1 G1 S2 G2

D1 D1 D2 D2

2590 Assembly

site code:

blank→JCET

G→GEM

8-Lead DFN3×3 Plastic Package

CYStek Package Code: V8

Date Code(counting from left to right) :

1st code: year code, the last digit of Christian year

2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D

May→E, Jun→F, Jul→G, Aug→H, Sep→J,

Oct→K, Nov→L, Dec→M

3rd and 4th codes : production serial number, 01~99

Documents

MTC2590V8 N-CH P-CHftp01.cystekec.com/MTC2590V8.pdfEquivalent Circuit Outline Ordering Information Device Package Shipping MTC2590V8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free