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• Low-capacitance, high-sensitivity, back-side-i l luminated design
• 950–1700 nm response
• Low operating bias, <5 V
• Custom devices available upon request
• Freespace optical communications
• Laser range finding
• Optical t ime domain reflectometry
• Optical coherence tomography
• Fluorescence measurements, spectroscopy, chromatography and electrophoresis
• Telecommunications
• LADAR/LIDAR
Applications
Features Metolius™ P-I-N Photodiodes
High-quantum efficiency P-I-N photodiode increases probability of detection and reduces false alarm rate.
The Metolius PX2-1000 series high-quantum efficiency P-I-N (HQE-PIN) InGaAs photodiodes can provide high-sensitivity NIR light detection with a large-diameter active area, minimal bias (< 5 V), and low dark currents.
This backside-illuminated photodetector provides both higher sensitivity and lower capacitance than competing frontside-illuminated photodiodes. While detector capacitance is minimized at a bias of 3 to 5 Volts, the device can operate with at least 90% of its specified responsivity with a fraction of the dark current at a bias of only 0.7 V.
For ease of integration, the HQE-PIN die is provided on a ceramic submount with or without a co-mounted temperature sensor. Packaging of these diodes is available in either a windowed TO-46 header or with a three-stage thermoelectric cooler (TEC) in a six-pin windowed TO-8 header.
PX2-1000 Series InGaAs P-I-N Photodiodes
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
PX2-1000 Series
Metolius™ InGaAs P-I-NPhotodiodes
2
Parameter Min Typical Max Units
Spectral Range, λ 950 1000–1600 1750 nm
Quantum Efficiency 0.82
0.96
0.85
0.98
1064 nm
1550 nm
Absolute Operating Temp. -73
200
-40 – 30
233 – 303
75
348
oC
K
Temperature Sensing Diode
Voltage and ΔV/K10.48 0.50
-2.18 mV/K0.51 V
1 Sourcing 10 µA and 298 K
S p e c i f i c a t i o n s — P X 2 - 1 0 0 0 S e r i e s
Active Diameter (Model) 1150-μm (PX21-SBXA) 650-μm (PX21-RBXA) 300-μm (PX21-QBXA)Units
Min Typical Max Min Typical Max Min Typical Max
Noise Spectral Density 27 20 13 fA/Hz1/2
Dark Current2 1.7 2.2 2.6 0.9 1.2 1.7 0.4 0.5 1.0 nA
Dark Current Dependence on Temperature3 0.30 0.30 0.30 dB/K
Total Capacitance4 38 12 2.9 pF
Max. InstantaneousOptical Input
500 est.
100 est.
50 est.
mW
2 VBias = 2 V, T=298 K3 240 K – 300 K4 VBias = 5 V
PX2-1000 Series
InGaAs P-I-N Metolius™Photodiodes
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
PX2-1000 Series
Metolius™ InGaAs P-I-NPhotodiodes
3
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
P X 2 1 - - - A
Device Device Type
Detector Format Diameter Package Window Revision
P = non-APD
photo-diode
X = P-I-N
2 = MetoliusTM
HQE-PIN
1 = Single
Element
Q=300µm
R=650µm
S=1150µm
B=Ceramic Submount
C=TO-46
K=TO-8 w/3-stage TEC
A=Flat
X=None
O r d e r i n g I n f o r m a t i o n
Other packaging options for the HQE-PIN photodiodes are available by request. Please contact Voxtel for specific ordering information and parts availability. Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of detectors in their system.
P e r f o r m a n c e — P X 2 - 1 0 0 0 S e r i e s
0.0
0.20
0.40
0.60
0.80
1.0
-500 0 500 1000 1500 2000
Spatial Uniformity of Photodiode Response
Quantu
m E
ffic
iency
Spot Location (um)
0.0
0.20
0.40
0.60
0.80
1.0
800 1000 1200 1400 1600 1800
Photodiode Spectral Response
Quantu
m E
ffic
iency
Wavelength (nm)
Quantum Efficiency Uniformity Quantum Efficiency vs. Wavelength (2V)
4
PX2-1000 Series
InGaAs P-I-N Metolius™Submounted Photodiode Dies
M e c h a n i c a l I n f o r m a t i o n — S u b m o u n t e d D i e s
CCATHODE CATHODEANODE CATHODE CATHODEANODE
1490 μm x 1490 μm1490 μm x 1490 μm
1500 µm
C
1420 µm
950 µm
CATHODE CATHODEANODE CATHODE CATHODEANODE
1400 µm
1500 µm
C
1020 µm
770 µm
CATHODE CATHODEANODE CATHODE CATHODEANODE
1185 µm
1145 µm 1145 µm
300-micron Submounted Die
650-micron Submounted Die
1150-micron Submounted Die
The submount for the PX2-1000 series InGaAs P-I-N photodetector is 250-μm-thick aluminum-nitrate. The photodiodes are 350-μm thick.
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
5
Pinout1) TEC -4) TEC +9) Temp Sense -10) Temp Sense +11) PIN Anode (p)12) PIN Cathode (n)
PIN Plane
M e c h a n i c a l I n f o r m a t i o n — H e r m e t i c a l l y P a c k a g e d P h o t o d i o d e s
TO-8 Packages with 3-stage TEC
6.35 ± 0.1
PX2-1000 Series
Metolius™ InGaAs P-I-NHermetically Packaged Photodiodes
Voxtel, Inc., 15985 NW Schendel Avenue, #200, Beaverton, OR 97006 www.voxtel-inc.com, T 971.223.5646, F 503.296.2862
Pinout1) PIN Cathode2) PIN Anode3) Ground, T Sense -4) T Sense +
TO-46 Packages
2.5 10-11
3.0 10-11
3.5 10-11
4.0 10-11
4.5 10-11
5.0 10-11
5.5 10-11
6.0 10-11
6.5 10-11
0 2 4 6 8 10
#1#2#3
Capacitance (
F)
Reverse Bias (V)
6
Capacitance vs. Voltage—1150-micron device
Typical Impulse Response—1150-micron device at 2.3 V Reverse Bias
-5.0 10-3
0.0
5.0 10-3
1.0 10-2
1.5 10-2
2.0 10-2
2.5 10-2
0 0.5 1 1.5 2
Impulse Response of 1150-um Photodiodeat 2.3 V Reverse Bias
Response (
arb
)
Time (ns)
A d d i t i o n a l I n f o r m a t i o n
PX2-1000 Series
InGaAs P-I-N Metolius™Photodiodes
Voxtel Literature No. PX2-1000 Series InGaAs P-I-N Photodiodes, 20 July 2017 © Voxtel makes no warranty or representation regarding its products’ specific
application suitability and may make changes to the products described without notice.