MECSA Network : From Design to Validation Spaziale Italiana, Roma, Italy, January 19th 2016 MECSA structure and composition - 1 • MECSA stands for Microwave Engineering Center for

Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016

Ernesto Limiti MECSA and Dipartimento di Ingegneria Elettronica,

Università degli Studi di Roma Tor [email protected]

MECSA Network :From Design to Validation


MECSA structure and composition - 1

• MECSA stands for Microwave Engineering Center forSpace Applications (italian legal name “CentroInteruniversitario di Ingegneria delle Microonde perApplicazioni Spaziali”)

• It is formally a “Inter-Universitary Research Center”, withpurely Public nature.

• In practice, it is a large specialized and distributed ResearchCenter, focused on Microwave Theory and Techniques.

• Established nearly 20 years ago, MECSA groups actually tenUniversities in Italy:

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• Total number of researchers (staff) is over 100, all of thembelonging to the MTT community. Post-docs and PhDs arevariable in number along years.

• A limited number of support personnel is provided for theMECSA headquarters only, managing the administrative andfinancial matters.

• The Center governing body (management committee) isformed by 2 elected representatives for each participatingUniversity.

• Among them, a pro-tempore Director is elected (actually prof.Ernesto Limiti).

• The governing body meets twice a year, and a ThematicScientific meeting is also held at least once a year, grouping allresearchers.


MECSA activities - 1

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MECSA activities can be grouped in two main categories :

• Microwave Electronics: devices, circuits and subsystems• EM Techniques, Propagation and remote sensing

For the sake of brevity, only the first group will be addressed inthis presentation.Regarding the second group, several other examples may befound in presentations of the present workshop.


MECSA activities - 2Within this area,

• Device characterisation and modelling: linear, non-linear and noiseup to 110GHz (and above), scaleable, bias-dependent modellingwith different approaches (equivalent-circuit, black-box, physical)

• Circuit and subsystem design: Amplifiers (PAs, LNAs, VGAs,DPAs ..), Mixers (resistive, passive, active …), frequencymultipliers, multifunction (Core chips, T/R chips, IntegratedReceivers …) adopting state-of the art design methodologies. Long-track experience in Hybrid and MMIC design with many foundries(SLX, UMS, OMMIC, WIN, NGS, TRW, Triquint, Raytheon, …).

• Subsystems verification and testing regarding all of the above …

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MECSA characterisation facilities - 1

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MECSA laboratories are featured by complementary specificcompetences and the necessary redundancy for standard tasks.As an example,

• Tor Vergata unit small-signal and noise• Torino unit large-signal characterisation• Bologna unit non-linear modelling

To this goal, the available equipment must be at the state-of-the-art and complete !



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• 2 Vector Network Analysers (HP 8510C 0.05-50 GHz and Anritsu37XXXD, 0.05-65 GHz, extended to 110 GHz)

• 2 Spectrum Analyser (HP 70000 DC-40 GHz, Agilent PSA E4448A3Hz-50GHz)

• Noise Measurement System (HP8970B-HP8971C DC-26.5 GHz, withproprietary amplified SSB extension to 40 GHz)

• 2 Elettromechanical Tuners (Focus 0.08-18 GHz e 3-50 GHz)

• Digital Sampling Oscilloscope (TekTronix up to 50 GHz)

• I-V Pulsed Measurement System (GaAs Code)

• Power Amplifier (AR 0.8-4.2 GHz - 25 W)

• Synthesised Sources (2 Anritsu MG3692A 2-20 GHz e HP 83640A DC-40 GHz)

• Vector Signal Source (Agilent E4438C 250 kHz-6 GHz)

• Probe Stations (Cascade Microtech RF-1 and proprietary semi-authomated one, equipped with anti-vibrating tables)

• Cryogenic Probe Station (down to 20 K, proprietary)

• Test-fixtures (Wiltron, Agilent, …)

Tor Vergata



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Bologna• HP8510 XF : HP VNA for on-wafer S parameter characterization 50 MHz-110 GHz

• Anritsu 37397D VNA for S parameter characterization 40 MHz-65 GHz

• Agilent N8975A Noise Figure Analyzer (10 MHz-26.5 GHz)

• Agilent E5052A 10 MHz- 7 GHz Signal Source Analyzer (phase noise measurements)

• National Instrument PXI-1042Q High speed digitizer and VST: arbitrary modulatedsignal Tx and Rx

• HP 8563E Spectrum Analyzer

• Anritsu ML 2488A Power Meter

• Proprietary measurement system for on-wafer pulsed I/V characterization

• Bias supplies for static I/V characterization of electron devices

• 2 Cascade probe stations for on wafer measurements and Temptronic temperaturecontrolled thermo chuck

• HP 83650B 10 MHz- 50 GHz Swept Signal Generator

• TWTA amplifiers: Logmetrics A340 4-8 GHz - 20 Watt, Hughes 8001H 29.5-40 GHz -1 Watt, Varian 6900K 8-18 GHz - 10 Watt.

• Auto step-back ultrasonic wedge bonder Kulicke & Soffa (gold and aluminium wires)

• LPKF Protomat HF100 milling and drilling machine for microwave hybrid circuits

• Micromanipulator station for die mounting , die attach station with epoxy conductiveglue

• Die attach eutectic brazing station, SMD components welder station with thermalcontrol

22 mm2 class 10000 clean room Lab



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• Vector Network Analyzer HP 8510C [0.05 GHz -40 GHz]

• Vector Network Analyzer Anritzu up to 40 GHz

• Vector Network Analyzer Scorpion [10 MHz - 6 GHz] + calibrated noise sources

• Spectrum Analyzer Agilent [9 KHz – 26.5 GHz]

• Signal Integrity Network Analyzer, Lecroy Sparc 3400E [40 Gs/s]

• Signal Generator, Agilent ESG-D Series [250 KHz – 4 GHz]

• Power Meter, Agilent EPM Series [10 MHz - 40 GHz]

• Maury Automated Tuner System and Active Load-Pull System Maury-PAF

• Microwave Transition Analyzer HP [DC - 40 GHz]

• Solid-State Mil Mega Power Amplifiers 27 W, [0.8 GHz – 4 GHz, 1 - 30W]

• 2 TWT Variant Power Amplifiers [12 GHz -18 GHz]

• 2 Synthesized Source HP up to 20 GHz

• High current multi-channel DC power supply and high current bias tee for highpower GaN device bias, Agilent N5769A, [1500W, 100V]

• Vector Signal Analyzer, Agilent MXA N9020A, [BW 30 MHz, 26 GHz]

• 2 Cascade Automatic probe station for on-wafer characterization

• Cascade probe station with thermally controlled chuck

Torino



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Active Harmonic Load-Pull

Gate/BaseBias Network

Drain/CollBias Supply

On Wafer DEVICE

Probe Station

CIRCULATOR

ISOLATOR ISOLATORBIAS TEE BIAS TEE

BANDPASS FILTERAT 6.5 GHz

DIRECTIONALCOUPLER

E5052A SIGNALSOURCE ANALYZER

DIRECTIONALCOUPLER

SPECTRUMANALYZER ANDPOWER METER

PC SOFTWARECONTROLAND DATA

ACQUISITION

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AM

PLIT

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IC/ID ACQUISITION

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PHASE NOISE DATA ACQUISITION

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Computer ControlledMicrowave Tuner



S1S2

S3

S3c

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T1 T2

50 Ohm

Phase noise characterisation

RCVR

OUTPUT BLOCKSOURCE-PULL BLOCK

DUT

VNA Reference Planes

DUT Reference Planes

CH

1C

H 2

VN

A

NS

TUNER IN

TUNER OUT

BIAS TEE

BIAS TEETERM

SP4T

DPDT

S-Par & Noise integrated Test Bench

Closed Loop Cryo probe station (down to 20K)



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MECSA facilities are clearly used for internally-funded andcoordinated basic research, and are very often adopted to supportexternal companies for

• Technology assessment• Technology optimisation (realise-characterise-model

loop)• Technology development• Realised subsystem characterisation• Active/passive device model extractions• PDKs development and verification• ad-hoc modelling



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Examples :• KorriGan : first large European-scale GaN project, in

which MECSA acted (also) as device modelling center forSelex, III-V Lab and QinetiQ technologies, whileevolving

• GARANTE : Italian MoD project for 0.25m GaNtechnology assessment (Selex ES)

• Quagas : ASI project for Space qualification of 0.25mGaAs technology (Selex ES)

• TeraSCREEN : FP7 project, within which a 0.04mmHEMT technology is developed (OMMIC)

• In the past, several examples including COSMIC,MANPOWER, ESPRIT IV … European projects



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… but also technological investigations:

• Physical simulation and modelling (Monte Carlo, Drift-diffusion …), using both commercial and ad-hoc simulationtools.

• Thermal simulation and modelling (by using commercialand ad-hoc simulation tools)

• Thermal characterisation (nonlinear thermal impedancemeasurements)

• Basic technological exploration (e.g. different semiconductoralloys and devices with non-conventional operating principlesfeatured by very low TRL, such as Diamond, see youtomorrow !)



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• Regarding microwave circuit design, the research focushas been historically directed towards DesignMethodologies for high- efficiency transmittingsubsystems and high performance receivers.

• The heritage of MECSA as circuit design centre datesback to the early ’90s with the COSMIC FP2 project(monolithic transimpedance amplifier design) andcontinues since then with the participation to manyprojects, both national and international, public- orprivately funded.

• All the major CAD tools are available (circuit, systemand EM-oriented) also for commercial use.

• A representative list is attempted in the following, as anexample of MECSA portfolio.


EDA project KorriGAN - 1

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2‐18 GHz SPDT GaN Switch

X Band SPDT GaN Switch

Development of GaN HEMT Technology in Europe (KorriGAN), (2005-2009).

• To take advantage of high power densities and power handling of GaN, Switching SPDT (up to 18 GHz) for transmitters.

• Design with Selex – SI and Tiger GaN 0.25 µm microstrip technology

• Small- and Large-signal characterisation of ofHEMT devices for switching applications

• Device modelling• Broadband (2-18GHz) and Narowband (X Band)

SPDT switch design


EDA project KorriGAN - 2

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2‐18 GHz GaN DLNA – V1

Development of GaN HEMT Technology in Europe (KorriGAN), (2005-2009).

• To take advantage of high robustness and power handling of GaN devices for Low Noise applications.

• Design with Selex – SI GaN 0.25 µm microstrip technology

• Noise, Small- and Large-signal characterisation of of HEMT devices for switching applications

• Device modelling• 2 Broadband (2-18GHz) robust LNA design as

cascade of distributed amplifier cells

2‐18 GHz GaN DLNA – V2


ASI project VIAS

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7.2‐7.5 GHz MMIC VCO in GaAs HBT technology

5.2‐5.5 GHz MMIC VCO in GaAs HBT technology

11‐11.5 GHz MMIC VCO in GaAs HBT Technology

7.2‐7.5 GHz MMIC VCO in pHEMT GaAs Technology

Preliminary design of low phase noise MMIC VCO for onboard TX/RX systems of SAR Payload of second generation (VIAS), (2006-2007).

• Application: development of MMIC VCO for on board Frequency Generation Unit

• Design with 2m GaInP/GaAs HBT Technology from WIN and UMS and 0.25m pHEMT GaAs technology from Triquint

• Characterization of HBT devices low frequency noise

• Identification of nonlinear noise models for phase noise simulation and optimization

• Development of design techniques for low phase noise MMIC oscillator design


ASI project PROMIX - 1

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X-band 1W MMIC Linear Power Amplifier in InGaP/GaAs HBT Technology

X-band 10W MMIC High Power Amplifier in InGaP/GaAs HBT Technology

Design and implementation of the MMIC chip set for X-band T/R modules for SAR Payload of second generation (PROMIX), (2009-2010).

• Application: X-band T/R modules for SAR• 2m GaInP/GaAs HBT Technology HB20PX from

UMS • Characterization of HBT devices for model

optimization• Design and characterization of driver amplifiers

and HPAs operating in pulsed condition (100 us / 30% duty)

• Optimization of HBT thermal behavior to avoid thermal runaway

• BUS bar solution for the final stage • Optimization of large signal working point to avoid

parametric oscillations


ASI project PROMIX - 2

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Design and implementation of the MMIC chip set for X-band T/R modules for SAR Payload of second generation (PROMIX), (2009-2010).

• Application: X-band T/R modules for SAR• 0.2m E/D PHEMT technology ED02AH from

OMMIC• Design and realisation of a X-Band Core Chip

featured by 6 bit phase control, 6 bit amplitude control and T/R switch, with integrated 3-stages LNA and MPA

• On-board S/P conversion• T/R control of amplifiers’ biases • Less than 15mm2 total area X-band Core Chip in OMMIC

ED02AH Technology


ASI project PAGaN

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GaN power amplifiers for space applications: design, development and experimental characterization (PAGAN), (2010-2013).

1st run: [5.2-5.8] GHz 20W MMIC HPA

2nd run: [5.2-5.8] GHz 40W MMIC HPA

• Application: future generation of C-band T/R modules for SAR

• 0.25m AlGaN/GaN HEMT Technology GH25 from UMS• Technology in development phase: cooperation mode with

the foundry • Characterization of GaN devices for model optimization• Characterization of GaN HEMT dispersive effects and

thermal impedance • Design of 2 MMIC HPA with 20 W and 40 W output

power at C band (5.2-5.8 GHz) and 40% PAE (pulsed 50 us /10 % duty)


ESA project SCFE

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Single GaN Chip Front-End (SCFE), (2013-2014).

UMS SCFE Layout. MMIC size is 6.9 x 5.4 mm2

SLX SCFE Layout. MMIC size is 7.28 x 5.40 mm2.

• Application: future generation of C-band T/R modules for SAR

• 0.25m AlGaN/GaN HEMT Technology GH25 from UMS and 0.5 AlGaN/GaN HEMT Technology from Selex ES

• Foundries in the project team• Characterization of passive and active GaN devices

for model extraction/verification/optimization• Design of SCFE in the two technologies integrating

HPA, LNA and T/R output switch to obtain 40W output power (40%PAE), 36dB gain and 2.5dB NF in C Band


FP6 project RadioNET (Pharos)

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Advanced RadioAstronomy in Europe (RadioNET), (2006-2009).

FPA prototype

• Application: build the future instruments for C-Band observation as focal-plane array receivers

• 0.2m pHEMT Technology ED02AH from OMMIC• Design of the entire electronic focal plane array

components: LNAs, MPAs, PSs, ATTs (PAMs)• Assembly and test of the entire focal plane array• Cryogenic (20K) operation of the LNAs, 77K operation

of the PAMs

LNA (full C-Band) Buffered attenuator (full C-Band) 6-bit PS (full C-Band)

Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016 24

ESA project SMPASwitched Mode Power Amplifiers Realization of a Transmitter based on PWM (SMPA), (2013-2015).

Transmitter architecture

• Application: study and development of a Solid State Transmitter for Synthetic Aperture Radar (SAR) in P-band (435 MHz) for Earth observation, capable of achieving more than 80% efficiency at high power level (150 W) employing European technologies

• Driver stages and modulator: IHP CMOS process

• Power stages : UMS discrete devices (CHK040A)

• Design of the power stages

PWMmodulator

On-chip driver Power stage

Matching and resonator

AM1 (analog)

OutPWM

modulatorOn-chip

driver Power stageMatching and resonator

Chip 1

Chip 2 WilkinsonCombiner

Powersplitter

AM2 (analog)

PWMmodulator



AM3 (analog)

PWMmodulator



Chip 3

Chip 4 WilkinsonCombiner

AM4 (analog)

WilkinsonCombiner

RF carrier

0.15 0.20 0.25 0.30 0.35 0.40 0.450.10 0.50

20

30

40

50

10

60

20

40

60

80

0

100

Duty cycle

PAE[::,Index1]

m13

Pou

t_dB

m[::

,Inde

x1] m14

Output Performance

m13plot_vs(PAE[::,Index1], delta)=85.737

m14plot_vs(Pout_dBm[::,Index1], delta)=45.758

Preliminary performance

Agenzia Spaziale Italiana, Roma, Italy, January 19th 2016 25

FP7 project SLOGANSpace quaLification Of High-Power SSPA based on GaN technology (SLOGAN), (2013-2016).

SSPA assembly

• Application: to evaluate and apply the potentiality of mature UMS European GaN based technology (GH-50) for space applications, through the development of a GaN SSPA EQM for the next generation of Galileo satellites (E1 band, Pout 300W) ready to replace the current TWTAs

• Design and assistance in space qualification of the power stages

Preliminary Breadboarding of the PAs

80W PA 40W PA


… not only projects, but also

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Design-on-Demand :

2-20GHz LNA (UMS 0.25um)

Full W Band LNA (OMMIC 70nm)

Full Q Band LNA (OMMIC 70nm)


Conclusions

• MECSA is an italian public research center joining togetherthe experimental resources, the expertise and the critical massof ten universities, representing the largest center in Italy inMTT.

• The center heritage is based on more than 25 years experienceof the participating universities in the field.

• Only microwave electronic activities have been brieflypresented: the activities in EM and propagation fields areequally widespread.

• MECSA is open to collaborations, not only academic but alsoindustrial and applied research in general, to promote anddiffuse (as in its DNA) MTT, as demonstrated by the long-track experience briefly recalled.

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Ernesto Limiti MECSA and Dipartimento di Ingegneria Elettronica,

Università degli Studi di Roma Tor [email protected]: +39 06 72597351

Fax : +39 06 72597953 Mob: +39 347 2537988

MECSAMicrowave Engineering Center

for Space Applications

Documents

MECSA Network : From Design to Validation Spaziale Italiana, Roma, Italy, January 19th 2016 MECSA structure and composition - 1 • MECSA stands for Microwave Engineering Center for