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Investigation of Comparator Topologies and their Usage in a Technology Independent Flash-ADC Testbed
Cand.-Ing. Öner B. Ergin
Prof. Dr.-Ing. Klaus SolbachDepartment of Microwave and RF-Technology
University of Duisburg-Essen
Dipl.-Ing. Harald Bothe and Dipl.-Ing. Reimund WittmannNokia Research Center Bochum
Prof. Dr.-Ing. Werner SchardeinUniversity of Applied Sciences and Arts Dortmund
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Introduction: Generic Engineering Model
•Variety of process technologies increases
•Circuits have to be rebuilt for every process
•The Generic Engineering Model (GEM)
· Circuits are portable to all technologies
· Automatical symbol, schematic, layout and testbench generation
•During this thesis, all circuits were developed using the GEM approach
Introduction: Selection methodology
•Selection methodology on top of GEM implementation allows parameterizable layout solutions•Main high level design constraints:
· Power· Supply voltage· Area· Bit resolution· Speed (clock rate)
•Comparator topologies are investigated with respect to the above
listed constraints for flash ADC implementation
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs) •Flash ADC
•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
State-of-the-Art ADCs
•ADCs are developed for high speed or high resolution
•High resolution and high speed leads to high die size (high costs and implementation effort)
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Flash ADC
•Fastest ADC structure
•2N
resistors , 2N-1 comparators, thermometer-code to binary encoder
•Single-ended or differential type (wider intensity range)
•Drawbacks (bit wise increase):
· Area and power double approximately
· Resistor matching becomes more critical
· Input bandwidth limited by increasing input capacitance
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators· Comparator Specifications· Latch-Type Topologies
· SC-Type Topologies
· Simulation Results in 65 nm Technology
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Comparators: Specifications
• Widely used components, especially in ADCs
• Comparator as 1-bit ADC
• Important specifications for implementation in flash ADCs:
· Bit resolution ( ≈
maximum bit resolution of flash ADC)
· Input common mode range (ICMR) ( ≈
maximum flash ADC approximation range)
· Speed ( ≈ maximum speed of flash ADC)
· Power ( ≈ minimum power dissipation of flash ADC (after division by the number of comparators))
• No Sample & Hold block needed when clocked comparators are implemented e.g.· Latch-type comparators· SC-type comparators
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators· Comparator Specifications
· Latch-Type Topologies· SC-Type Topologies
· Simulation Results in 65 nm Technology
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
·Advantages:·High and rapid amplification·Low area·Low power
·Disadvantages:·Kickback noise is the main challenge (Charge transfer between the input and the positive-feedback circuit when the amplification phase is active)·Mismatch and parasitic sensitivity are additional drawbacks·Output changes to opposed digital state in the regeneration phase
· Solution: SR-Latch at the output
Latch-type topologies
Dynamic latched
4-inputsClass AB latched
4-inputsStatic latched
2-inputs 4-inputs
Comparators: Latch-Type Topologies
·Principle: Positive-feedback circuit·Phases: regeneration (latch=0) and amplification
+
High speed+
Low power+
Low area
− High parasitic sensitivity− Limited ICMR
Comparators: Latch-Type: 2-inputs Dynamic Latched
Latch-type topologies
Dynamic latched
2-inputs 4-inputs
4-inputs Class AB latched
4-inputs static latched
+
High speed+
Low power+
Low area+
Rail-to-rail ICMR
−
Not equal resolution at different references
Comparators: Latch-Type: 4-inputs Class AB Latched
Latch-type topologies
4-inputs Class AB latched
4-inputs static latched
Dynamic latched
Contents
•Introduction
•State-of-the-Art analog-to-digital converters (ADCs)
•Flash ADC
•Comparators· Comparator Specifications
· Latch-Type Topologies
· SC-Type Topologies· Simulation Results in 65 nm Technology
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
SC-type topologies
2-inputs IOS
2-inputs OOS
4-inputsOOS
Single-
stage Multistage
Comparators: SC-Type Topologies
·Principle: Periodically sense and store the offset on capacitors·Phases: Offset cancellation, amplification and latch·A PMOS-input differential amplifier is used as the preamplifier·The latch part is represented by the 2-inputs dynamic latched comparator·Advantages
•High Resolution·Disadvantages
•High area•High power
+
Rail-to-rail ICMR+
High resolution
− High area− High power
Comparators: SC-Type: 2-inputs IOS
SC-type topologies
2-inputs IOS
2-inputs OOS
Single-
stage Multistage
4-inputs OOS
·IOS: Input offset storage
+
Rail-to-rail ICMR+
High resolution
− High area− High power
Comparators: SC-Type: 4-inputs OOS
SC-type topologies
2-inputs OOS
4-inputs OOS
2-inputs IOS
·OOS: Output offset storage
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators· Comparator Specifications
· Latch-Type Topologies
· SC-Type Topologies
· Simulation Results in 65 nm Technology•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Comparators: Results: Area and Resolution
2-input dynamic latched layoutClass AB latched layout
IOS layoutOOS 4in layout
050
100150
200250
300350
400450
500
Area [µm²]
2-input dynamic latched layoutClass AB latched layout
IOS layoutOOS 4in layout
01
23456789
10
Resolution [bits] for layouted Comparators
0,811,2
·Latch-type comparators·Low area·Parasitic sensitivity degrades maximum resolution
·SC-type comparators·High area·Less parasitic sensitivity
·Conclusion:·Lower area leads to less area consumption
Comparators: Results: Speed and Power
2-input dynamic latched2-input dynamic latched layout
4-input dynamic latchedClass AB latched
Class AB latched layoutStatic latched
IOSIOS layout
Multi IOSOOS 2in
OOS 4inOOS 4in layout
0
500
1000
1500
2000
2500
Speed [MHz]
0,811,2
2-input dynamic latched2-input dynamic latched layout
4-input dynamic latchedClass AB latched
Class AB latched layoutStatic latched
IOSIOS layout
Multi IOSOOS 2in
OOS 4inOOS 4in layout
0,00
10,00
20,00
30,00
40,00
50,00
60,00
70,00
Power [µW] at 10 MHz
0,811,2
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators
•Comparator Selection Procedure•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Comparator selection routine
Flash ADC testbed GEM
Comparator GEM
ParametersTechnology
Bit resolutionSpeed
Approximation rangeSupply voltage
2-inputs / 4-inputs
FAT tree encoder with single bubble
error correction array GEM
Poly resistor array GEM
OutputRelevant topologiesArea consumptionsPower dissipations
Comparator Selection Procedure
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology· Layouts· DNL/INL Results
•Conclusion
Flash ADC Testbed: Layouts: 4bit-flash ADC
•Checked and verified for resolutions between 4 and 10 bit (DRC & LVS)
• Compatible for all analyzed comparators
• Dimension scalability: (x-y distribution of comparators &
resistors is adjustable)
4bit Flash ADC layout; Implemented comparator: 2-inputs dynamic latched
Flash ADC Testbed: Layouts: Dimension Scalability with 8bit-Flash ADC
· Scalable X-Y distribution of resistors & comparators· Left: 32 blocks with each 8 comparators & resistors· Right: 16 blocks with each 16 comparators & resistors· Implemented Comparator: 4-inputs Class AB latched
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology· Layouts
· DNL/INL Results•Conclusion
Flash ADC Testbed: DNL / INL Results
2-input dynamic latched layoutClass AB latched layout
IOS layoutOOS 4in layout
0
0,02
0,04
0,06
0,08
0,1
0,12
0,14
0,16
DNL / INL Results 4 bits, 10 MHz
DNLINL
2-input dynamic latched layoutClass AB latched layout
IOS layoutOOS 4in layout
0
0,05
0,1
0,15
0,2
0,25
DNL / INL Results 5 bits, 10 MHz
DNLINL
Contents
•Introduction
•State-of-the-Art Analog-to-Digital Converters (ADCs)
•Flash ADC
•Comparators
•Comparator Selection Procedure
•Flash ADC Testbed Verification in 65 nm Technology
•Conclusion
Conclusion•Investigation of relevant comparator topologies:
· Latch-type comparators:+ high speed, + low area, + low power, -
high parasitic sensitivity
· SC-type comparators: -
low speed, -
high area, -
high power, + low parasitic sensitivity
•Investigation and implementation of comparator selection procedure for the flash ADC testbed
•A flash ADC GEM testbed has been developed, which is compatible to all analyzed comparators
· Checked and verified (DRC, LVS) for resolutions between 4 and 10
bits
· Integration of x-y dimension scalability
· Complex FAT tree encoder with single bubble error correction array implemented
· Functional verification (simulation of schematic and extracted layout view) has been done in 65 nm technology
· Selection methodology verified for all analyzed comparators
•Main advantage of the selection methodology:
· Simplification of selection and implementation of flash ADCs referring to high-level demands
Thank you for your attention!