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INTRODUCTION TO ELECTRONICS EHB 222E Bipolar Junction Transistors III (BJT) Asst. Prof. Onur Ferhanoğlu Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS 1

INTRODUCTION TO ELECTRONICS EHB 222E

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Page 1: INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS

EHB 222E

Bipolar Junction Transistors III

(BJT)

Asst. Prof. Onur Ferhanoğlu

Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

1

Page 2: INTRODUCTION TO ELECTRONICS EHB 222E

BJT models (π vs. T)

2Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 3: INTRODUCTION TO ELECTRONICS EHB 222E

BJT parameters

3Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 4: INTRODUCTION TO ELECTRONICS EHB 222E

BJT Amplifier Configurations

4Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

3-basic configurations

Page 5: INTRODUCTION TO ELECTRONICS EHB 222E

Characterizing Amplifiers

5Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Amplifier circuit Amplifier model

1) Input resistance:

2) Open-circuit voltage gain:

3) Output resistance:(input cancelled)

voltage gain

Overall gain:

Page 6: INTRODUCTION TO ELECTRONICS EHB 222E

The Common-Emitter (CE) Amplifier

6Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

-> Most widely used configuration

π-model

ro can often be neglected

Neglect vi & vπ to find output resistance

Voltage gain with load (RL)

Overall voltage gain

Page 7: INTRODUCTION TO ELECTRONICS EHB 222E

CE Amplifier with an Emitter Resistance

7Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

T-model

Voltage gain

If load resistance is connectedReplace RC with RC II RL

Open circuit voltage gain

Overall gain

Avo

Page 8: INTRODUCTION TO ELECTRONICS EHB 222E

Common Base (CB) Amplifier

8Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Similar to CE Amplifier, without emitter resistance

If RL is connected:

Avo

Page 9: INTRODUCTION TO ELECTRONICS EHB 222E

Common Collector (CC) Amplifier or Emitter Follower

9Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

(voltage divider)

(RL -> ∞)

Page 10: INTRODUCTION TO ELECTRONICS EHB 222E

Summary and Comparison of 3 Amplifiers

10Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 11: INTRODUCTION TO ELECTRONICS EHB 222E

Summary and Comparison of 3 Amplifiers

11Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

• CE configuration is best suited for high gain applications• Considering Re, CE stage provides performance improvements at the expense of

gain reduction• Low input impedance of CB amplifier makes it useful for specific applications.

Well suited as a high frequency amplifier• The emitter follower (CC), having a unity gain, finds application as a voltage

buffer for connecting a high resistance source to a low resistance load.Can be used as the last stage of a multistage amplifier.

Page 12: INTRODUCTION TO ELECTRONICS EHB 222E

Summary and Comparison of 3 Amplifiers

12Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Rin & Rout

may cause the input to drop significantly

High Rin and low Rout

is particularly useful as a buffer

Page 13: INTRODUCTION TO ELECTRONICS EHB 222E

Biasing BJT Amplifiers

13Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 14: INTRODUCTION TO ELECTRONICS EHB 222E

Biasing BJT Amplifiers

14Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

2 bad solutions for biasing!

Fixing VBE Fixing IBSharp exponential relationship between iC and vBE

implies that any small difference in VBE from desired value will result in large deviations in IC and VCE

Variations in β will cause variations in IC

Page 15: INTRODUCTION TO ELECTRONICS EHB 222E

Classical Bias Arrangement

15Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

• Supplies fraction of supply voltage.• RE is connected to the emitter

To make IE insensitive to temperature and β variation:

Page 16: INTRODUCTION TO ELECTRONICS EHB 222E

Classical Bias Arrangement with 2 supply voltages

16Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

VEE replaces VBB

Same constraints apply

Page 17: INTRODUCTION TO ELECTRONICS EHB 222E

Biasing using a Collector-to-Base Feedback Resistor

17Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 18: INTRODUCTION TO ELECTRONICS EHB 222E

Biasing using a constant-current source

18Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

• Emitter current becomes independent of β and RB

Implementation of the current source

Neglect base currents (high β )

Since Q1 and Q2 share the same VBE:

Collector current will remain constant as long as Q2 is active, neglecting the early effect

Page 19: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CE

19Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Combine CE&CB&CC Amplifiers + biasing arrangement

CE – bypass capacitor is to establish signal (ac) ground. Emitter signal current passes through this capacitor (bypasses the current source)

CC1: coupling capacitor:Lets ac signal in, blocks DC

CC2: coupling capacitor:Lets ac signal oout, blocks DC

Page 20: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CE

20Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Thevenin equivalent to the right of rπ

Change the formulas in the table:-> replace Rin with RBIIrπ

-> multiply Gv by-> replace Rsig with

Page 21: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CE

21Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Thevenin equivalent to the right of rπ

Change the formulas in the table:-> replace Rin with RBIIrπ

-> multiply Gv by-> replace Rsig with

Page 22: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CE with Re

22Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 23: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CE with Re

23Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

PreviouslyNow:

Replace:

-> multiply Gv by

Page 24: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CB

24Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Same as previous,Formulas apply here

Page 25: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CB

25Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Page 26: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CC

26Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Previously:RB!

Page 27: INTRODUCTION TO ELECTRONICS EHB 222E

Discrete circuit BJT Amplifiers – CC

27Asst. Prof. Onur Ferhanoğlu BJT/ INTRODUCTION TO ELECTRONICS

Previously:

Now:Multiply by

replace