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8/6/2019 Introduction to CMOS [Compatibility Mode]
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Introduction to CMOS
Introduction to Circuit Design
Lecture Series by Intel
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2009 Intel India Pvt Limited. All rights reserved. The
information provided in this presentation is intended for the sole
use of the recipient and is for educational purposes only. No part of
this presentation may be reproduced or transmitted in any form or
by any means, including photocopying and recording, without
written permission. Permission must also be obtained before any
part of this presentation is stored in a retrieval system in any
nature. No responsibility can be accepted by Intel India Pvt
Limited, the Editorial Board or contributors for action taken as a
result of information contained in this presentation. The views
expressed in this presentation by the presenter are not necessarily
those of the Editorial Board or Intel India Pvt Limited.
8/6/2019 Introduction to CMOS [Compatibility Mode]
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Lecture Series
Introduction to CMOS APR 30th
Static CMOS Design APR 30th
CMOS Logic Styles MAY 21st
Sequentials & Memory MAY 21st
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Lecture Series
Introduction to CMOS APR 30th
Static CMOS Design APR 30th
CMOS Logic Styles MAY 21st
Sequentials & Memory MAY 21st
8/6/2019 Introduction to CMOS [Compatibility Mode]
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Introduction to CMOS
What will we learn?
Evolution of Integrated Circuits
Scaling trends
MOS transistor fundamentals
CMOS Inverter characteristics
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The Journey
First transistor
Bell Labs, 1948
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The Journey
First Integrated Circuit
Fairchild Semi, 1961
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The Journey
Intel 4004 Microprocessor
Intel, 1971* ~2.3K transistors
* ~700 Khz
* 10um technology
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The Journey
Intel Pentium 4 Processor
Intel, 2005* ~125,000K transistors
* ~3.8 Ghz
* 90nm technology
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The Journey
Intel Core i7 Processor
Intel, 2008* ~730,000K transistors
* ~3.5 Ghz
* 45nm technology
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Moores Law
1965, Gordon Moore # of transistors
on a chip doubledevery 2 years
This trend has held
true for more thanhalf a century
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Why Scaling?
Technology shrinks by 0.7 every generation
We can integrate 2x more devices
Translates into ~2x cost reduction of a function
Hence semiconductors is one of those rare
industries which gives us more for the same costas time goes by
There have been design challenges as we have
scaled down technology
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Design Abstraction Levels
SYSTEM
MODULE
+
CIRCUIT
VoutVin
CIRCUIT
VoutVin
DEVICE
n+
S D
n+
G
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MOS Transistor
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NMOS & PMOSSymbols
p-ch
n-ch
Physical Structure
n+ n+
p-sub
DrainSource Gate
Substrate
channel
n-ch MOS
p+ p+
n-sub
DrainSource Gate
Substrate
channel
p-ch MOS
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Threshold Voltage
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Modes of Operation
Drain 0VSourceGate
Vgs > Vt ; Vds=0V
p-sub
Substraten-type channel
n-ch MOS
depletion layer
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Modes of Operation
n+ n+
Drain (Vds)SourceGate
Linear region: Vgs - Vt > Vds > 0V
p-sub
Substraten-type channel
n-ch MOS
depletion layer
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Modes of Operation
n+ n+
Drain (Vds)SourceGate
Saturation region: Vds > Vgs - Vt
p-sub
Substraten-type channel
n-ch MOS
pinch-off region
depletion layer
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IV Curve
3
4
5
6X 10
-4
VGS = 2.0V
VGS = 2.5V
Linear Saturation
VDS = VGS - VT
2.07V
1.57V
0
1
2
0 0.5 1 1.5 2 2.5
VDS (V)
VGS = 1.0V
VGS = 1.5V
cut-off
0.57V
1.07V
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Short Channel Effects
Short channel device behavior is mainly due tovelocity saturation
105
10
0
0 1.5 3
(V/m)
c=
0
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CMOS Inverter
VDD
Vout
CL
Vin
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CMOS Inverter Load LinesX 10-4
Vin = 2.0V
Vin = 2.5VVin = 0V
Vin = 0.5V
PMOS NMOS
Vout (V)
Vin = 1.0V
Vin = 1.5VVin = 1.0V
Vin = 1.5V
Vin = 0.5VVin = 2.0V
Vin = 2.5V
Vin = 2VVin = 1.5V
Vin = 1V
Vin = 0.5V
Vin = 0V
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1.5
2
2.5
CMOS Inverter VTC
(V)
NMOS offPMOS res
NMOS satPMOS res
NMOS satPMOS sat
0
0.5
1
0 0.5 1 1.5 2 2.5
Vin (V)
Vou
NMOS resPMOS sat NMOS res
PMOS off
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Introduction to CMOS
What did we learn?
Evolution of Integrated Circuits
Scaling trends
MOS transistor fundamentals
CMOS Inverter characteristics