Industrial Applications Applications of SR Characterization of materials Production technology –Structure, Chemical state, Contamination, etc. thin films for electronic devices;LSI,

Industrial ApplicationsIndustrial ApplicationsElectronicsElectronics

Gate oxide films for LSIGate oxide films for LSIThin films for storage devices, etcThin films for storage devices, etc

materialsmaterialsSafety tire, fibersSafety tire, fibersMetal coats, etcMetal coats, etc

Energy & environmentsEnergy & environmentsDetection of metals in human hairDetection of metals in human hairbatterybattery

JASRI Satoshi Komiya

01

Industrial Applications of SR Industrial Applications of SR Characterization of materials

Production technology

Structure, Chemical state, Contamination, etc.thin films for electronic devices;LSI, HDD, lasersmetalspolymers, batteries,catalyses

high brilliant source, x-raybig machine

lithography, photo-assisted etching or depositionhigh flux source, ultra-violet-soft x-ray;

small machine

02

Synchrotron radiation

Industrial ApplicationsIndustrial Applications

electronics Metals & Soft materials

Energy & Environment

Batteries: fuel cell & Li-ion Analysis of contamination elementsCatalysts for environment

TiresFibers

OthersBuilding materialsCatalysis Insects

Films for ULSI, semiconductorsHDD, DVDSemiconductor laser

Steel & Coats on steel Al included bubbles

Life science

medicine

03

LSI chipLSI chip

ElectronicsElectronics

CMOS StructureCMOS Structure

gate oxidessilicide contacts

lines barrier metals

Isolated oxides

cross section

key points for R&D:gate & lineskey points for R&D:gate & lines

04

Roadmap for semiconductorsRoadmap for semiconductors

Manufacturable solution exit, and are being optimized

Manufacturable solution are known

Manufacturable solution are not known

ITRS:International Technology Roadmap for Semiconductors 2001)

0.6-1.1

0.7-1.2

0.8-1.3

0.9-1.4

1.1-1.6

1.2-1.5

1.3-1.6

Equivalent physical oxide thickness for high-

performance Tox (EOT) (nm)

25283237455365MPU physical gate length (nm)

2007200620052004200320022001

High-performance logic technology requirements

How can we measure thickness accurately?

Grazing incident xGrazing incident x--ray reflection and diffractionray reflection and diffraction

Incidence Reflection

High brilliant x-ray

Structural analysis of thin films

Diffractionthin films

incident

Detector

Sample

Reflection

Diffraction

05

XX--ray reflectivity analysisray reflectivity analysis

Information obtainedby reflectivity analysis

Reflectivity InformationPeriod ThicknessAmplitude DensityDamping

Incidence angle()

Reflection Intensity

0 1 2 3 4 5 6

100

10-2

10-4

10-5

10-6

10-7

10-8

10-9

10-1

10-3

reflection

incidence

TaOx/Si

06

XX--ray reflectivity profiles of oxide films ray reflectivity profiles of oxide films on silicon substrateson silicon substrates

Native oxide

Incidence Angle (deg)Ref

lect

ion

inte

nsity

Bare Si

AccuracyThickness0.01nmDensity0.01g/cm3Roughness0.02nm

Si substrate

SiO2

07

XX--ray reflectivity profile and interference ray reflectivity profile and interference components (calculation)components (calculation)

SiO2 on Sithickness4nmSi=2.33 g/cm3Interference components

Subtraction technique of the interference component derive easy analysis.

SiO2 > Si

SiO2 < Si

R=log10(R/Rave)Rave:reference

08

Analysis with the interference componentAnalysis with the interference component

4nm thin SiO2 on Si fabricated by thermal oxidation

Single layer model

Double layer model

Interfacial layer

09

Generation of high dense interfacial layerGeneration of high dense interfacial layeron thermal oxidation process on thermal oxidation process

Temperature Temperature

wet

dry

SiO2Si

Interfacial layerhigh dense, 1nm N.Awaji et al., JJAP 35(1996)L67.

10

Development of measurement techniqueDevelopment of measurement technique

N.Awaji in Fujitsu Labs.

Si(002)

0 5 10 15 20 25 30 35 40 45 50-

0

1

2

3

4

5

6

7

8

9

1

1

1

1

log 1

0I (c

ps)

2 (deg)

SiO2 1.0 nm

BL16XU

BL16B2

Accurate evaluation of ultra-thin films

BL16XU:undulator beamlineBL16B2:bending magnet beamline

Same region

11

Generation of high dense interfacial layerGeneration of high dense interfacial layeron thermal oxidation process on thermal oxidation process

Temperature Temperature

wet

dry

SiO2Si

Interfacial layerhigh dense, 1nm N.Awaji et al., JJAP 35(1996)L67.

X-ray Crystal Truncation Rod Scattering

Si(1

11)

SiO2/Si

crystalline SiO2

Observation of crystalline SiOObservation of crystalline SiO22 in thermal oxides in thermal oxides

a-SiO2

Si

I.Takahashi et al., Physica B245(1998) 306.

high dense interfacial layer

1.1nm

Interference fringes

12

sample

lamp

X-ray

detector

X-ray diffractometer

Lamp heating equipment Lamp heating equipment

O2

100

1000

0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7

Inte

nsity

(cps

)

(1,1,L)

Si RT

300C

15min30min1hr1hr15min1hr30min2hr2.5hr3hr3.5hr

4hr5hr6hr

7hr8hr

300C after 900C 8hrgrowth of crystallineSiO2 at the interface

Crystal Truncation Rod)

900

0

2

4

6

8

10

12

14

0 2 4 6 8 10

crystalline SiO2

amorphous SiO2

Thic

knes

s(nm

)

Growth Time(hr)

900

at RT

N.Awaji Appl. Phys. Lett., 74(1999)2669.

InIn--situ observation of CTR scatteringsitu observation of CTR scatteringduring thermal oxidation during thermal oxidation

interface layer = oxidation front : 1 nm at RTfundamental phenomena on thermal oxidation

13

X-ray Crystal Truncation Rod Scattering

Si(1

11)

SiO2/Si

crystalline SiO2

Observation of crystalline SiOObservation of crystalline SiO22 in thermal oxides in thermal oxides

a-SiO2

Si

I.Takahashi et al., Physica B245(1998) 306.

high dense interfacial layer

1.1nm

Interference fringes

12

J.H. Oh et al., Phys. Rev. B63, 205310 (2001)

0.14nm

Tran

sitio

n la

yers

Si1+

Si4+

Si3+

Si2+

Si O

Transition layer model3rd Si3+/Si4+ (Si3+

Binding Energy [eV]

714 eV

970 eV1330 eV

1465 eV

9799101103105107

h =

Si 2p h=

394396398400402404

1465 eV

1330 eV

970 eV

714 eV

N 1s

Binding Energy [eV]

K.Nishizaki et al.:to be reported at ISCSI-4, Karuizawa, Oct., 2002.

SiSi 2p & N 1s Photoemission Spectra2p & N 1s Photoemission Spectraof of SiON SiON thin film on thin film on SiSi(001)(001)

Num

ber

of p

hoto

elec

tron

s (a.

u.)

Num

ber

of p

hoto

elec

tron

s (a.

u.)

Depth profiles of Depth profiles of SiOSiOXX and NSiand NSi33 in in oxynitrideoxynitride filmsfilms

K.Nishizaki et al.:to be reported at ISTC, Tokyo, Spet., 2002

Depth (nm)

0

0.5

10

0.5

1

0 2 3 4

3 at.%

6 at.%

SiO2

SiOx

Si

NSi3

NSi3

SiO2

SiOx

Si

1 Rel

ativ

e am

ount

of c

hem

ical

bon

ding

stat

es

H a r d D i s k D r i v eH a r d D i s k D r i v e

Head

year

Mem

ory

dens

ity (M

bit/i

n2)

MO

HDD

15

MR devicespin valve

Spin-valvestructure

GMR head for readGMR head for readControl of ultra-thin

multi-layers

a few nm

sense current

upper shield

under magnetic pole

coil

Recording truck

down shield

I

gap layer(Cu)

free layer(CoFe)pin layer(CoFe)

MlM

leadlead

GMR:Giant Magnetic ResistanceGMR:Giant Magnetic Resistance

Si substrate

T.L.

Ta

NiFe

CoFe

Cu

CoFe

PdPtMn

Ta

Ta2O5

SpinSpin--valve multivalve multi--layers structurelayers structure

PdPtMn 25CoFeB 2Cu 2CoFeB 2NiFe 4Ta 5

Thickness(nm)

Ta 5

Si sub.

TEM cross section5 nm

Unobservable4 layers

TEM:Transmission Electron Microscopy

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0 1 2 3 4 5 6 7 8

calculation

experiment

XX--ray reflectivity analysis of multiray reflectivity analysis of multi--layerslayers

I n c i d e n c e a n g l e ( d e g )

Ref

lect

ion

inte

nsit

y

layeredstructure

thickness(nm)

rouphness(nm)

Ta2O5 2.0 0.6Ta 9.3 0.5

PbPtMn 24.3 0.5CoFe 2.2 0.4Cu 2.5 0.5

CoFe 2.3 0.4NiFe 3.8 0.3Ta 4.8 0.4I.L. 7 0.2Si

Y.Kitade in Fujitsu Labs.

16

Incident x-ray Reflected x-rayGMR multi-layers

PC

Soller slit

SC/PCAnalyzerLiF, PET

fluorescence

Optics PCSR

Optics

Fluorescence spectra from spin-valve multi-layers with grazing incidence

Wavelength dispersive XWavelength dispersive X--ray fluorescenceray fluorescence17

Standing wave is induced into multi-layers

incidence reflection

TaPt FeCuX-ray fluorescence

0

200

400

600

800

1000

1200

1400

Co-K

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

(deg)

Cu-K

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 (deg)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Ni-K

(deg)X-r

ay fl

uore

scen

ce in

tens

ity (a

.u.)

X-ray incident angle (deg)

Si substrate

T.L.

Ta

NiFe

CoFe

Cu

CoFe

PdPtMn

Ta

Ta2O5

Grazing Incidence XGrazing Incidence X--ray Fluorescence Techniqueray Fluorescence Technique18

-100 0 100 200 300 400 500

0.0

0.2

0.4

0.6

0.8

1.0

D.L

.

T.L

.

TaO

x

Ta

PdPtM

n

CoFeB

Cu

CoFeB

NiF

e

Ta

Si

As deposited

Pro

file

(Norm

aliz

ed)

-100 0 100 200 300 400 500

0.0

0.2

0.4

0.6

0.8

1.0

D.L

.

T.L

.

CoFeB

Cu

CoFeB

NiF

e

Ta

TaO

x

TaSi

PdPtM

n

390 annealed

Pro

file

(Norm

aliz

ed)

t

Broadening of the interfaces in GMR Broadening of the interfaces in GMR multilayers multilayers 3 5 8

4 7 13

Depth profiles of elements analyzed from GIXF and reflectivity data

(magnetic properties degraded after annealing)

N.Awaji Fujitsu scientific & technical journal 38 (2002) 82.

19

recording media

H a r d D i s k D r i v eH a r d D i s k D r i v e

record along a circle in plane

a

NiP

520nm

530nm

550nm

a-C cover layerCo alloy recording layer

Cr buffer layer

Al substrate

cross section

Hc

circularradial

coercive force

Co alloy : hcp crystal

hard disk

texturetexture

diffraction

c:magnetization axis

control the orientation

record along a circle and inrecord along a circle and in--plane magnetizationplane magnetizationmagnetization along a circlemagnetization along a circlealong a radius

along a circle

20

Grazing incident xGrazing incident x--ray reflection and diffractionray reflection and diffraction

Incidence Reflection

High brilliant x-ray

Structural analysis of thin films

Diffractionthin films

incident

Detector

Sample

Reflection

2

Diffraction

2

Grazing incidence xGrazing incidence x--ray diffraction profilesray diffraction profiles

2 (deg)

Textured-Al/NiP/Cr/Co-alloy(20nm)/a-C

Inte

nsity

(a. u

.)

25 30 35 40

1

2

3

4

5

6

7

0

Co(002)Cr(110)

Co(002)

Co(

100)

Co(101)

Cr(200)=0.5

=0.2

from Cr buffer layer

2 (deg)

Inte

nsity

(a. u

.)

25 30 35 400

1

2

3

Co(

100)

Co(

002)

Co(101)

circle

radius

preferential orientationof c-axis due to texturealong a circle

from only a Co layerunder grazing incidence

21

2 4 6 8 10

500

1000

1500

2000

0

Coe

rciv

ity H

c(O

e)

Intensity ratio I[Co(002)]/I[Co(100)]

:along a circle:along a radius

Textured sub.(Ra50)

Preferential cPreferential c--axis orientation dependence axis orientation dependence of coercive magnetic forceof coercive magnetic force

Increase in coercive force due to preferential c-axis orientation along a circle

T.Hirose IEEE Trans. Mag. 33. (1997) 2971.

22

IndustrialIndustrial Application in JapanApplication in JapanFilms for ULSI, semiconductorsHDD, DVDSemiconductor laser

electronics Metals

Soft Materials Energy & Environment

Steel & rust preventive coat Various coats to prevent heat, stress, etc.Al including bubbles


TiresFibers



XAFS, XPS Diffraction; GIXD, Powder

Reflectivity, Grazing incidence x-ray fluorescence techniqueFluorescence analysis

Imaging, Micro-beam

Blue: Ga1-xInxN

Red: GaAlAs

20 3510

520470400Emission wavelength(nm)

InN-composition ()

How is local structure in GaInN with low In composition less than 20% which is the critical composition for the phase separation?

Blue laser for DVD optical storage devicesBlue laser for DVD optical storage devices23

InNInN composition dependence of composition dependence of GaInNGaInN XAFSXAFS

0

0.05

0.1

0.15

0.2

27.8 28 28.2 28.4 28.6 28.8 29

XAFS spectra around In K edge measuredin the fluorescence mode

1.5%4.5%5.7%

7.64%10.2%15.85%

20%Inte

nsity

(a. u

.)

Photon energy (keV)

Mole fraction of InN:

24

0

5

10

15

20

25

0 1 2 3 4 5 6

Fourier transforms of k 3 (k)

over the k range from 3.5 to 14 -1

1.5%4.5%5.7%7.64%10.2%15.85%20%F

(r) (

-4)

r ()

In-N

In-Ga (In)Mole fraction of InN:

Ga or In

N

a

c

wurtzite crystal structure(a=3.189, c=5.185 for GaN)

InNInN composition dependence of composition dependence of radial distribution functionsradial distribution functions

Monotonic decrease in the second peaks from In-Ga(In)

25

InNInN composition dependence of composition dependence of the local structure the local structure

2

2.5

3

3.5

4

0 5 10 15 20

Inte

rato

mic

dis

tanc

e (

)

Mole fraction of InN (%)

In-InIn-Ga

In-N2.17 : In-N distance of bulk InN

3.19 : Ga-Ga distance of bulk GaN

N

Ga

InChange of bond angles

InN composition dependence of atomic distances

26

Deviation from random distribution of Deviation from random distribution of GaGaand In atoms in and In atoms in GaInN GaInN mixed crystalmixed crystal

0

2

4

6

8

10

12

0 5 10 15 20

Coo

rdin

atio

n nu

mbe

r

Mole fraction of InN (%)

random alloy

In atom

Ga atom

In composition dependence of the 2nd neighbor coordination numbersT. Miyajima phys. Stat. Sol. (b) 228, 45 (2001).

27

What materials are excellent in high speed record/elimination and reliability

Phase transition storage materials for DVDPhase transition storage materials for DVD

Recorded mark

Phase transition materials

Debye-Scherrer camera

AuGeSnTeGeSbTeAgInSbTe

Accurate structure analysis with a Debye-Scherrer camera

High poweramorphous formation by quenching Low powercrystallization by annealing

Record&elimination by laser exposure

28

6.0 8.0 10.0 12.0 14.0 16.0 18.0

0

50000

100000

400000

450000

500000

inte

nsity

(ar

bi. u

nit)

2-theta (deg.)

18.0 20.0 22.0 24.0 26.0

0

10000

20000

30000

20 40 60 80 100 120

1000

10000

inte

nsity

(cp

s)

2-theta/theta (deg.)

Ag3.4In3.7Sb76.4Te16.5(+) experiments

calculationdifference

With a laboratory source

X-ray powder diffraction with SR source

Excellent resolution

XX--ray power diffraction with SRray power diffraction with SR29

0 100 200 300 400 500 600 700 800 9004.34

4.35

4.36

4.37

4.38

4.39

a (A

)

temperature (K)

11.2

11.3

11.4

11.5

11.6

11.7

c (A

)

-200 -100 0 100 200 300 400 500 600

temperature ()

A

B

C

a b

c

o

11.2

76A

4.355A

0.2357

rl = 3.343A rs = 2.955A

A7, R3m

rl

rs

y x

o

z

r

z = 0.253a

86.8

r

R32/R3m

Temperature dependence of lattice parameteres

At low temperatureAt high temperature

Random occupancy of Ag, In, Sb, Te

Simple cubic units

Fine crystalline structure of Fine crystalline structure of AgInSbTeAgInSbTeAg3.4In3.7Sb76.4Te16.5

30

T. Matsunaga Phys. Rev. B64 (2001)184116.

z

yxx

x

z z

y

y

GeTe-Sb2Te3 Au25Ge4Sn11Te60 Ag3.4In3.7Sb76.4Te16.5

Unique crystalline phasePoor package :simple cubic, allowance of many vacanciesRandom occupancy of component atoms at lattice sites

Common properties on three materialsCommon properties on three materials31

DFB-LDregion

Modulatorregion

A package process for fabrication of lasers with various wavelength

Development of laser diodes for Development of laser diodes for optical communicationsoptical communications

Control of wave length

DFB laser diode integrated with wave length modulator for WDM optical communications system

Narrow-strip selective metal-organic vapor phase epitaxy (MOVPE)

32

XX--ray microray micro--beambeam

mFormation of x-ray micro-beam with asymmetric diffraction

33

Determination of process conditionDetermination of process condition

40% up on emission efficiency of semiconductor laser

S.Kimura et al., APL 77(2000) 1286.

-10 0 10 20 30102

103104105106107108109

10101011101210131014

= 40 m

= 30 m= 25 m= 20 m

= 15 m= 10 m

= 6 m= 8 m

= 4 m

Wm = 0 m

q/q (10-3 )0 10 20 30 400.55

0.60

0.65

0.70

0.75

Inte

nsity

Mask width (m)

Com

posi

tion

(x,y

)

In composition (x)As composition (y)

Mask width dependence of lattice parameter

Mask width dependence of composition (x,y)

InxGa1-xAsyP1-x

34

XX -- ray fluorescence analysisray fluorescence analysis

Sample (Si wafer)

Reflected X-rayIncident X-ray

Detectors (SC, FPC)

Wave dispersiveAnalyzing crystals:

LiF(200), PET(002), multi-layers

Solar slit

Incident X-ray Reflected X-ray

Sample (Si wafer)

Detector (SSD)

Energy dispersive

6.5 7 7.5 8E(keV)

Inte

nsi

ty(a

rbitra

ry u

nit)

EDX

WDX

CoK NiK

CoK FeK

SSDPC

SROptics

High sensitivityLow energy resolution

low sensitivityhigh energy resolution

35

x106 atoms/cm2 = 4 atoms/100m2

1.82.12.54.4allowance(x108 atoms/cm2)

16G-2G1Gproduction(bit)

50

2011

70

2008

100

2005

130

2002

size(nm)

ITRS road map

UltraUltra -- low detection limitlow detection limit

8x1082x1011Al4x1065x108Cu4x1065x108Ni

After concentration

Before concentration

atoms/cm2

EDX WDXNative oxide

Bare Si surfaceHF drop

HF drop dissolve native oxide automatically.

DryTo the center

Concentration of contamination atoms

Beforeconcentration

Afterconcentration

M. Takemura in TOSHIBA

36

Industrial Applications in JapanIndustrial Applications in JapanFilms for ULSI, semiconductorsHDD, DVDSemiconductor laser

electronics Metals




TiresFibers





Imaging, Micro-beam

Direct observation of fibers in safety tireDirect observation of fibers in safety tire

SEM image

ice

tire

Fibers stick into ice

Direct observation of fibers sticking into ice

press

fiber

R&D on safety tire on ice

X-ray tube

SR source

Refractive contrast image

Difference of absorption

Sharp edge image

37

space

fibers

tireice

tireice

ice

tire

Fibers stick into ice

Fibers slip from ice

press pull

H. Kishimoto in Sumitomo Rubber Industries

38

Press

Observation of crush of babbles in AlObservation of crush of babbles in Al

CCD

Crush from the bottom side

X-ray Shock absorber for crush

Images stored during 2 sec

Crush from the both sides Crush all1mm

T. Watanabe in Kobelco Research Institute

39

InIn--situ observation of alloying of situ observation of alloying of galvanized steel by Zngalvanized steel by Zn

IR heater

Holder (quartz)

slit detector2 2

Thermocouple

Ion chamber

Sample chamber

I0

I

slit

Melt & Alloy

Quartz holder

IR

Light guideLamp heater

ZnFe-Zn alloy

Fe (base)

Rust preventive coat

Diffractmeter

40

Alloying process of Zn on steelAlloying process of Zn on steel

8.0 8.2 8.4 8.6 8.80.0

0.5

1.0

1.5

2.0

2.5

177s

155s

133s

111s

89s

67s

44s

Zn melt.

1s

22s

Zn (101)

1 (330)

Norm

aliz

ed Inte

nsi

ty I/I

0

2 / deg.Amount of 1 crystals t(integrated intensities)

Controlled by diffusion processZn-0.14mass%Al

0 50 100 150 2000.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Norm

aliz

ed

Peak

Are

aTime / s

FeZn101480

Variation of diffraction profiles on alloying

41

A. Taniyama SPring-8 User Experiment Report 2002A0658.

Characterization of inner stress Characterization of inner stress in coats on turbine bladesin coats on turbine blades

ZrO2

NiCoCrAlY

240m)

Variation of diffraction profiles on heating

Gas turbine

Coat to protect blades from high temperature gas

Diffractometerfurnace

Ni3Al(311)

42

K. Suzuki SPring-8 User Experiment Report No.8 2001B0063.

Temperature dependence of residual stress Temperature dependence of residual stress in bondin bond--coatcoat

Z

Surface normal

Diffract plane nomal

sin2

Diff

ract

ion

angl

e2

deg.

Tc=0.24mm

2constant Ksin2K=(tan0) 2(1+)/E

Temperature dependence of residual stress in bond-coat

Temperature K

tensile

compressive

Softening

Tc=0.24mmTc=0.083mm

Res

idua

l stre

ss (M

Pa)

Poissons ratio EYoungs modulaus

43

XX--ray microray micro--beam with zone platebeam with zone plate

Focus with zone platem

44

Structural analysis of a single fiberStructural analysis of a single fiberA single fiber

X-ray

weighting

0

0.2

0.4

0.6

0.8

1.0

1.2

0 1000 2000 3000 4000 5000

El = 478GPa

PBO (005)

Stress [MPa]

Stra

in o

f cry

stal

(%)

Stress-strain of a PBO single fiber 0.01mm in diameter

Structural change at local parts in complex fibers

.Kodera in JASRI

45

0

10

40

30

20

ppm

00.20.40.60.81.01.21.4

fg

Cu Zn

0 25 50 75 100 1250

25

50

75

100

125

X (m)

Y (

m)

Cu in human hear

10-40 ppm(1 fg = 10-15 g)

22--D mapping of a very small amount of D mapping of a very small amount of metals with xmetals with x--ray fluorescence analysisray fluorescence analysis

Influence of special water from deep sea on the body

46

.Kagoshima Nucl. Instrum. & Methods. A 467-468 (2001) 872.

Capacity fading on Li ion battery Capacity fading on Li ion battery during charge/discharge cyclesduring charge/discharge cycles

Cathode:LiNi0.8Co0.2O2

In-situ XAFS study on cathode during cycling of batteryX-ray

Coin cell

Ni K-edge XANES spectra of LiNi0.8Co0.2O2

Coin cell

47

Decrease in capacity Decrease in capacity due to no return of Li into cathodedue to no return of Li into cathode

Ni

O

NiO6

Li+

capacity

capacity

48

Mechanism of the capacity fadingMechanism of the capacity fading

Initial:distorted NiO6 octahedronAfter fading:regular NiO6 octahedron

Ni

O

NiO6

Li+

Jahn-Teller distortion

T.Nonaka J. Synchrotron rad., 8 (2001) 869.

49

Request to analysis on material Request to analysis on material science in industryscience in industry

No detectable with other techniques How situation : Research, Development,

Production R&DExcellent characterization Development of process :

regular measurement according to plan TestQuality & Quantity & Time Response to trouble : Speed

How can we (SR) reply on request?

50

Situation in JapanSituation in Japan

No detectable with other techniques How situation : Research, Development, Production

R&DExcellent characterizationStructural analysis of thin films of electronic devices

Development of process : Determination of process conditions for laserImaging of tire and bobbled Al

TestQuality & Quantity & Time Not actualized in Japanese facilities

Response to trouble : SpeedNo answer

51

Industrial Applications in JapanIndustrial Applications in JapanFilms for ULSI, semiconductorsHDD, DVDSemiconductor laser

electronics Metals




TiresFibers





Imaging, Micro-beam

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Industrial Applications of SRRoadmap for semiconductorsSi 2p & N 1s Photoemission Spectra of SiON thin film on Si(001)Depth profiles of SiOX and NSi3 in oxynitride filmsInN composition dependence of the local structureDeviation from random distribution of Ga and In atoms in GaInN mixed crystalCapacity fading on Li ion battery during charge/discharge cyclesDecrease in capacity due to no return of Li into cathodeMechanism of the capacity fadingRequest to analysis on material science in industrySituation in Japan

Documents

Industrial Applications Applications of SR Characterization of materials Production technology –Structure, Chemical state, Contamination, etc. thin films for electronic devices;LSI,