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Power and productivityfor a better world™
IGBT StakPak IGBT и Диодные модули ABBБиполярные транзисторы с изолированным затвором (IGBT) - самый молодой член в семействе высоковольтных ключей. Управление потоком тока через прибор обычно берет на себя источник напряжения на 15 В с большим сопротивлением.
Таким образом, управляя высокими токами, используется очень малая мощность управления.
г.Минск тел.8(017)2005646 www.fotorele.net IGBT и Диодные модули ABB [email protected]
радиодетали электронные компоненты со склада и под заказ
2.5 kV
5SNR 10H2501
5SNR 13H2501
5SNR 20H2501
4.5 kV
5SNA 1300K450300
5SNA 2000K450300
5SNA 2000K451300
2500
2500
2500
4500
4500
4500
1000
1300
2000
1300
2000
2000
3
4
6
4
6
4
Part number Number ofSubmodules
Voltage VCES (V) Current IC (A) IGBT / Diode ratio
150.3 x 236.3
150.3 x 236.3
150.3 x 236.3
235.1 x 273.3
235.1 x 273.3
235.1 x 273.3
Footprint (mm)
2:1
2:1
2:1
1:1
1:1
2:1
Table 1
г.Минск тел.8(017)2005646 www.fotorele.net IGBT и Диодные модули ABB [email protected]
радиодетали электронные компоненты со склада и под заказ
Power and productivityfor a better world™
HiPak IGBT Modules
ABB Semiconductors’ HiPak modulesare a family of highpower IGBTs inindustry standard housings using thepopular 190 x 140 mm, 130 x 140 mmand 140 x 70 mm footprints.HiPak modules are the perfect matchfor demanding highpower applicationssuch as traction, renewable energy(wind, solar), industrial drives and T & D.
harsh conditions. This has been achieved through smoothswitching characteristics – essential in the high-inductanceenvironments of power electronic systems – and throughrugged operation (high SOA) as this translates into operationalsafety margins for the equipment.
Furthermore, the SPT+ chipsets (IGBT and Diode) at 1700 Vand 3300 V blocking voltages have been improved to operateat higher junction temperatures up to 150°C in the HiPakmodules .
Table 1 on the next page shows the current HiPak productportfolio. Modules designated “HV” have isolation voltages ofup to 10.2 kVRMS. Standard types have isolation voltages of upto 6 kVRMS, depending on VCES rating.
ABB’s HiPak modules are available in three standard isolationvoltages (4, 6 and 10.2 kVRMS) and a variety of circuit confi-gurations. These modules exclusively use Aluminium SiliconCarbide (AlSiC) base-plate material for good thermal cyclingcapability and Aluminium Nitride (AlN) isolation with low ther-mal resistance. This material combination offers an excellentthermal cycling performance thanks to its matched thermalexpansion coefficients (CTE). All HiPak modules feature ABB’sadvanced Soft Punch Through (SPT and SPT+) chip tech-nology, which combines low-losses with soft-switching per-formance and record-breaking Safe Operating Area (SOA).
In keeping with ABB’s reputation for offering high powersemiconductors of exceptionally high reliability, the HiPakSPT chips have been optimized for reliable operation under
г.Минск тел.8(017)2005646 www.fotorele.net IGBT и Диодные модули ABB [email protected]
радиодетали электронные компоненты со склада и под заказ
SPT TechnologySPT is a well-established planar IGBT technology covering the range of 1200 V to 6500 V. It is characterized by smoothswitching waveforms and exceptional robustness which is of particular importance at higher voltages and currents where strayinductances are not easily minimized.
HiPak Product Portfolio
1.7 kV
5SND 0800M170100
5SNE 0800M170100
5SNA 1600N170100
5SNA 1800E170100
5SNA 2400E170100
5SNA 2400E170305
5SNA 2000J170300
5SLA 2000J170300
5SNA 3600E170300
5SLA 3600E170300
2.5 kV
5SNA 1500E250300
3.3 kV
5SNG 0250P330300
5SNA 0800N330100
5SNE 0800E330100
5SNA 1000N330300
5SLD 1000N330300
5SLD 1200J330100
5SNA 1200E330100
5SNA 1200G330100
5SNA 1500E330305
4.5 kV
5SNG 0150P450300
5SLD 0650J450300
5SNA 0650J450300
5SNA 0800J450300
5SLD 1200J450350
5SNA 1200G450300
5SNA 1200G450350
6.5 kV
5SLD 0600J650100
5SNA 0400J650100
5SNA 0500J650300
5SNA 0600G650100
5SNA 0750G650300
1700
1700
1700
1700
1700
1700
1700
1700
1700
1700
2500
3300
3300
3300
3300
3300
3300
3300
3300
3300
4500
4500
4500
4500
4500
4500
4500
6500
6500
6500
6500
6500
2 x 800
800
1600
1800
2400
2400
2000
2000
3600
3600
1200
2 x 250
800
800
1000
2 x 1000
1200
1200
1200
1500
2 x 150
2 x 650
650
800
2 x 1200
1200
1200
2 x 600
400
500
600
750
HiPak1
HiPak1
HiPak1
HiPak2
HiPak2
HiPak2
HiPak1 HV
HiPak1 HV
HiPak2
HiPak2
HiPak2
HiPak0 HV
HiPak1
HiPak2
HiPak1
HiPak1
HiPak1 HV
HiPak2
HiPak2 HV
HiPak2
HiPak0 HV
HiPak1 HV
HiPak1 HV
HiPak1 HV
HiPak1 HV
HiPak2 HV
HiPak2 HV
HiPak1 HV
HiPak1 HV
HiPak1 HV
HiPak2 HV
HiPak2 HV
Part number PackageVoltage VCES (V) Current IC (A) Configuration
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
140 x 70
130 x 140
190 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
190 x 140
140 x 70
130 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
Footprint
Dual IGBT
Chopper
Single IGBT
Single IGBT
Single IGBT
Single IGBT
Single IGBT
Single Diode
Single IGBT
Single Diode
Single IGBT
Half Bridge
Single IGBT
Chopper
Single IGBT
Dual Diode
Dual Diode
Single IGBT
Single IGBT
Single IGBT
Half Bridge
Dual Diode
Single IGBT
Single IGBT
Dual Diode
Single IGBT
Single IGBT
Dual Diode
Single IGBT
Single IGBT
Single IGBT
Single IGBT
*
*
*
*
*
*#
*
*
*
+
Table 1 * TVJ (operational) up to 150°C + 10.2 kVRMS Isolation # Contact factory
Voltage Class (V)
0
1.5
VC
E, o
n ( V
)
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SPT
SPT+
Fig. 1 Vce(sat) for different IGBT Cell Technologies on SPT Silicon at 125°C.(Current Density of SPT range, same Eoff )
SPT+ TechnologySPT+ retains all the features of the SPT technology butreduces VCE SAT by up to 30% according to the curve ofFig. 1 – an achievement previously believed to be possibleonly with Trench technology.
г.Минск тел.8(017)2005646 www.fotorele.net IGBT и Диодные модули ABB [email protected]
радиодетали электронные компоненты со склада и под заказ
