High efficiency system design with Infineon power discretes -Infineon CoolMOS TM,OptiMOS TM, IGBT and SiC diode Vincent Zeng( 曾伟权 ) System application

High efficiency system design with Infineon power discretes-Infineon CoolMOSTM,OptiMOSTM, IGBT and SiC diode

Vincent Zeng(曾伟权 )

System application engineer

Infineon Technologies China

[email protected]

10.02.2010

Infineon Products help reduce losses along the Entire Energy Distribution Chain

AC/AC

AC/DC/AC

Motor Drives,

TractionAC/DC/AC

Power Supply

AC/DC

Point of Load

DC/DC

~10%

Losses

Losses

Losses

Losses

Losses

Energy Generation

Energy Distribution

Energy Consumption

Mature Super Junction Technology Mature Super Junction Technology

n epi

p +

n

D

p

n +sub

SG

Blocking state

n epi

D

p -

n +sub

GS

p +

n

p

Conducting state

---

--

-

10.02.2010

The evolution on power semiconductor is never end

1200V SiC JFET1200V SiC JFET

Bi-Polar Boost like Bi-Polar Boost like Structure SiC DiodeStructure SiC Diode

New Packaging ConceptNew Packaging Concept<1mm HV ThinPAK, TO-247 High Creepage<1mm HV ThinPAK, TO-247 High Creepage

New die attachment methodNew die attachment methodDiffusion soldering technologyDiffusion soldering technology

Emitter

Gate

Collector p+

n+

p+

n-(substrate)

n (fieldstop)

Emitter

Gate

Collector p+

n+

p+

n-(substrate)

n (fieldstop)

Trench+ Field Stop IGBTTrench+ Field Stop IGBT

10.02.2010 Copyright © Infineon Technologies 2010. All rights reserved.

Content

CoolMOS technology CoolMOS technology

TrenchStop IGBT technology TrenchStop IGBT technology

SiC diode technology SiC diode technology

OptiMOS technology OptiMOS technology

18.04.23

What is CoolMOS™ technology

On state:

Reduction of resistance of epitaxial layer by high doped n-columns

Higher doping level in n-type drift region results in lower Rds(on)

Blocking state:

Compensation of additional charge by adjacent p-columns

Half of active chip area is covered by p-columns

During blocking state the p-column compensates the charge of the adjacent n-column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit!

Source

Gate

Drain n+

n+

p+

nepi

Standard MOSFET

Source

Gate

Drain n+

n+

p+

pnepi

CoolMOS™

18.04.23

CoolMOSCoolMOSTMTM – Technology leader in high voltage MOSFETs – Technology leader in high voltage MOSFETsCoolMOSCoolMOSTMTM – Technology leader in high voltage MOSFETs – Technology leader in high voltage MOSFETs

High voltage MOSFET in 500V, 600V,

650V, 800V and 900V

Offers a significant reduction of

conduction and switching losses

Enables high power density and

efficiency for superior power

conversion systems

Best-in-class price/performance ratio

A short description of CoolMOS™

0

5

10

15

20

25

30

400 500 600 700 800 900 1000

Ron x A [mm2]

New horizonsfor high voltageapplications

Standard MOSFET Ron x A ~ V(BR)DSS

2,4...2,6

CoolMOSTM

Fig.: A near-linear relationship between Rds(on) and V(BR)DSS indicates the significant difference between CoolMOS and conventional MOSFET

10.02.2010 Page 7

Performance

98 99 01 04 Time

CoolMOSTM CP(C5)

• 50% parastic Cap. and Qg. reduction• Best-in-class : 99 mOhm in TO220,

45 mOhm in TO247 IPW60R045CP

CoolMOSTM S5

• SJ Revolution in conduction loss

• Lowest Rds(on) on the market: 70mOhm

• Best-in-class: 190 mOhm in TO220

08 09

• Self-limited dv/dt, di/dt, easy-to-use.• Enhanced Diode

Commutation• 37 mOhm/650V in

TO247

CoolMOSTM C6/E6

CoolMOSTM generation and milestone

CoolMOSTM C3

• Revolution in switching losses• Fast Diode “CFD” Series• High current capability.• Best-in-class: 160 mOhm in TO220

10.02.2010

CoolMOS™ C6 high efficiency @ affordable costs

CoolMOS™ C6 is the new generation of Infineon´s market leading high voltage power MOSFET´s designed according to

the revolutionary superjunction (SJ) principle

The new 600V&650V C6 portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use

10.02.2010

CoolMOS™ C6 high efficiency @ affordable costs

Features: Features:

lower area specific on-state resistance (RDS(on))*A)

reduced energy stored in output capacitance (Eoss)

high body diode ruggedness

reduced reverse recovery charge (Qrr)

Benefits:Benefits:

lower costs compared to previous CoolMOS™ generations

proven CoolMOS™ quality combined with high bodydiode ruggedness guarantee outstanding reliability

easy control of switching behavior

low switching losses (due to low Eoss)

CoolMOS C6 reduced energy stored in output capacitance

CoolMOS™C6 shows the best Figure-of-merit Ron E∗ oss

Low energy stored in output capacitance make make CoolMOS™C6 the right choice for hard switching applications.

0

2

4

6

8

10

12

0 100 200 300 400 500Vds [V]

Eo

ss

[µ

J]

IPP60R190C6

SPP20N60C3

IPP60R199CP

10.02.2010

CoolMOS™ C6 600V efficiency measurement

Efficiency comparison CoolMOS C6 versus C3Efficiency comparison CoolMOS C6 versus C3

Ease of useEase of use & good efficiencygood efficiency especially

in light load conditions!

70%72%74%76%78%80%82%84%86%

0 100 200 300 400 500

Pout [W]

Eff

icie

ncy

[%

]

2 xIPP60R190C6Rg,ext=3.3 Ohm2 x SPP20N60C3Rg,ext=3.3 Ohm

-0.1%0.0%0.1%0.2%0.3%0.4%0.5%0.6%0.7%

0 100 200 300 400 500Pout [W]

Eff

icie

nc

y d

iffe

ren

ce

C6

vs

C3

[%

]

DCM PFC stage, 150W, AC in 90V

Ecellent price performance ration, ease of use and good efficiency especially in light load conditions make 650V CoolMOS™C6 the right choice for hard switching applications.

CoolMOS™ C6 650V efficiency measurement

C6 shows no gate spikes up to pulse currents beyond 2 times rated current

C6

Nominal current

pulse current40A

20A

Vgs

Id

Comp SJ

Nominal current

pulse current40A

20A

Dynamical allowed value of gate voltage (30V)

Vgs

Id

Competitor part shows turn off gate spikes even below nominal current.

CoolMOS C6 gate switching behavior Under high conduction current

10.02.2010

Hard commutation of body diode

-30

-20

-10

0

10

20

30

40

0 0.2 0.4 0.6 0.8 1time [µs]

dra

in c

urr

en

t I

DS

[A

]

SPP20N60C3

IPP60R190C6

SPP20N60CFD

CoolMOS™ C6 shows less reverse recovery charge than C3 and better softness than CFD

04/18/23 Page 15

350..500V DC

230VAC

Isolation + RectificationBuck DC/AC stage

S1

D1

S2

S3

D2..5

S6..7

S8..9

But, a MOSFET with integrated fast body diode is required in some design…

S5

S4

ZVS topology

S2..S5 require the MOSFET has low reverse recovery charge Qrr and robustness body diode for hard-commutation

Reactive power operation

S6,S7 switches to hard commutation of body diodes

…Infineon has officially launched CoolMOS CFD2

Set date Page 16

Main differences between CFD and CFD2

CFD2 is a 650V class MOSFET (CFD is 600V)

Better light load efficiency due to reduced gate charge

Softer commutation behavior and therefore better EMI behavior

CFD2 offers customers a new cost down roadmap

-5

0

5

10

15

20

0.25 0.3 0.35 0.4 0.45 0.5

time [µs]

I d [

A]

Ids_SPW47N60CFD

Ids_IPW65R080CFD

CFD: fast switching of voltage or current i.e. di/dt or dv/dt(main causes of EMI)

CFD2: softer commutation reduces this problem saving customer time and money in designing in the part

Voltage overshoot CFD2 vs. CFD vs. Competition

0

200

400

600

800

0 100 200 300 400 500

U [

V]

t [µs]

T=25°C; If=20A; Rg,d=5.6 Ohm; Ugs=13V

SPW47N60CFD

IPW65R080CFD

Comp2 43A676V

569V

452V

224V less overshoot with CFD2 for reliable systems

CoolMOS™ C6/E6 Portfolio 600V

0.099 Ω35 A

0.125 Ω30 A

0.16 Ω24 A

0.19 Ω20 A

0.28 Ω15 A

0.38 Ω11 A

0.45 Ω9.5 A

0.52 Ω 8 A

0.6 Ω7.3 A

0.75 Ω6.2 A

0.95 Ω4.5 A

1.4 Ω3.2 A

2 Ω2.5 A

3.3 Ω 1.8 A

TO-252 D-Pak [D]

TO-263D²PAK [B] TO-220 [P]

TO-220Fullpak [A]

TO-262I²-PAK [I] TO-247 [W]

IPW60R070C6

IPW60R099C6

IPW60R160C6

IPW60R190E6

IPW60R280E6

IPA60R160C6

IPA60R190E6

IPA60R280E6

IPA60R380E6

IPA60R450E6

IPA60R520E6

IPA60R600E6

IPA60R950C6

IPP60R160C6

IPP60R190E6

IPP60R280E6

IPP60R380E6

IPP60R450E6

IPP60R520E6

IPP60R600E6

IPP60R950C6

IPP60R750E6

IPP60R1k4C6

IPI60R190C6

IPI60R280C6

IPI60R380C6

IPB60R160C6

IPB60R190C6

IPB60R280C6

IPB60R380C6

IPB60R600C6

IPB60R950C6

IPD60R380C6

IPD60R450E6

IPD60R520C6

IPD60R600E6

IPD60R950C6

IPD60R750E6

IPD60R1k4C6

IPD60R3k3C6

IPP60R099C6 IPA60R099C6

0.07 Ω47 A

IPW60R125C6IPP60R125C6 IPA60R125C6

IPB60R099C6

IPD60R2k0C6

0.041 Ω77 A

IPW60R041C6

IPA60R750E6

CoolMOS™ C6 Portfolio 650V

IPW65R037C6: 650V 37mΩ TO247

CoolMOS™ E6 650V Portfolio

650V CoolMOS™ CFD2 Portfolio

Set date Copyright © Infineon Technologies 2010. All rights reserved. Page 21

600 mΩ, 80 mΩ, and 41 mΩ are already launched.420 mΩ to 110 mΩ will be launched around February to March 2011.1400 mΩ and 950 mΩ will be launched around May 2011.


Content





Server VRD/VRM

Notebook

Bricks, IBC, POL

Telecom SMPS 48V SR

Server SMPS 12V SR

NB Adapter 16-20V SR

Low Voltage Drives Solar µ-inverter

LED

Automotive

SMPS AC/DC

Low Voltage MOSFETs Target Applications

Computing

Telecom DC/DC

Industrial

Small Signal

HP Vantage Platinum 2,5kW; 94% Eff.

NB Adapter

23/4/18

Beyond the silicon limit

0 20 40 60 80 100 120 140 160 600 800 1000

n

orm

aliz

ed

on

-re

sist

an

ce

breakdown voltage [V]

Si-limit (die)

Si-limit in SuperSO8

Si-limit in TO-220

IFX-products

OptiMOS™ CoolMOS™

Set date

Infineon OptiMOSTM

(25V~250V) Efficiency

Lowest RDS(on) and FOM RDS(on) *Qg against competitors

Infineon Next Best Competitor

V

0

1000

2000

3000

4000

5000

6000

25 30 40 60 75 80 100 120 150 200 250 V

FOM RDS(on) *QgRDS(on)

0

40

80

120

160

25 30 40 60 75 80 100 120 150 200 250

CanPAK M SuperSO8 D²PAK-7 pin D²PAK TO-220

80VBSB044N08NN3 G

4.4 mOhmBSC047N08NS3 G

4.7mOhmIPB019N08N3 G


2.5mOhmIPP028N08N3 G

2.8mOhm

100VBSB056N10NN3 G

5.6mOhmBSC060N06NS3 G


2.5mOhm IPB027N10N3 G


3.0mOhm

120VBSC077N12NS3 G




4.1mOhm

150VBSB150N15NZ3 G

15mOhmBSC190N15NS3 G

19mOhmIPB065N15N3 G



7.5mOhm

200VBSC320N20NS3 G

32mOhm

IPB107N20N3 G10.7mOhm

IPP110N20N3 G11.0mOhm

250VBSC600N25NS3 G

60mOhm

IPB200N25N3 G20.0mOhm

IPP200N25N3 G20.0mOhm

Best-in-class

DPAKDPAK

SO8SO8

D²PAK/TO220D²PAK/TO220

Packag

e Size

Performance

SuperSO8SuperSO8

S3O8S3O8

Package resolution

SMD leadless package has higher efficiency

88

89

90

91

92

93

94

10 20 30 40 50

eff

icie

nc

y [

%]

output current [A]

BSC047N08NS3

IPP057N08N3

Higher efficiency throughlower power losses

with SuperSO8 packaging

Tested in a 12V server power supply in the Sync Rec stage

18.04.23

Overshoot comparison same chip

45 V

50 V

55 V

60 V

65 V

70 V

75 V

10 A 15 A 20 A 25 A 30 A 35 A 40 A 45 A 50 A

output current

ove

rsh

oo

t

SSO8

TO220 low Ls

TP220 high Ls

SMD leadless has lower voltage overshoot

Longer electrical MOSFET connections mean

¬ Higher inductance

¬ Higher voltage stress for the MOSFET

18.04.23

Adapterboard TO220 to SuperSO8

Gate

Drain

Source

Source

Drain

Gate

What do I need this board for?- quick replacement of TO220 in existing designs- electrical verification of SuperSO8

Sync Rec MOSFETs: Q1, Q2MOSFET – Gate Resistor: R1RCD Snubber – Diode: D3RCD Snubber – Capacitor: C3RCD Snubber – Discharge Resistor: R3Connectors for RCD Snubber: AScrew holes


Content





23/4/18

How to improve the standard IGBT-technology?

n (fieldstop)

Concept of thin wafer with Fieldstop-technology reduces VCE(sat) dramatically Reduction of Conduction Losses for higher Efficiency and improved thermal properties

Reduction of Swtiching Losses for higher Efficiency

Introduction of trench gate technology reduces VCE(sat) further Reduction of Conduction Losses for higher Efficiency

Emitter

Gate

Collector p+

n+

p+

n-(substrate)

n (fieldstop)

Emitter

Gate

Collector p+

n+

p+

n-(substrate)

n (fieldstop)

18.04.23

TrenchStopTM in thin wfr technology with carrier profile optimized for fast switching

IGBT Technology selection

High Speed 3

18.04.23

New Highspeed 3 IGBT technology

Applikationsbewertung

Trade-off diagram Ic = In/2, Tj= 150°C

12

14

16

18

20

22

24

26

28

30

32

1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4

VCEsat / V

Eo

ff /

mJ/

A

SKB15N60HS

Competitor B

Competitor A

IKP15N60T

IGW40N60H3HighSpeed3

Trade-off diagram 150°C

SKW25N120

IKW25T120

Competitor A

IKW25N120T2

IKW25N120H3

Competitor ACompetitor A

Competitor B

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

2 2.4 2.8 3.2 3.6 4 4.4

VCEsat / V

Eo

ff /

mJ

/A

High Speed 3

Trench gate+ Field Stop offers superior trade-off

Reduced switching losses for switching Frequencies above 30 kHz

Soft switching behaviour

Optimized diode for target applications

18.04.23

New highspeed 3 IGBT switching behavior

Elimination of tail current at high temperature…

…for MOSFET-like switching behavior

High Speed 3

Std IGBT3

High Speed 3

CoolmosC3

23/4/18

Powerloss comparisonSimulation with IPOSIMTM

In comparison with the previous generation TrenchStop2, the HighSpeed 3 shows 30% reduction in switching losses and only 16% increase in conduction losses.

The HighSpeed 3 shows approx 10% lower losses than the best competitor,

setting benchmark performance.

3-phase inverterVbus=600VFsw=20kHzIload=40A

3-phase inverterVbus=600VFsw=20kHzIload=40A

23/4/18

Turn-off Waveform comparison

IKW30N60H3 IGBT Best competitor

Smooth switching waveforms

Low dV/dt and dI/dt for reduced EMI

Ic=5A Vce=400V

Vge=+15/0V

18.04.23

Infineon’s High Speed 3 IGBT Portfolio600V and 1200V Product Family

Continuous collector current

at TC =100°C

20A20A

Sin

gle

IG

BT

Sin

gle

IG

BT

30A30A

TO-247TO-220

Du

oP

ac

k ™

Du

oP

ac

k ™ 20A20A

30A30A

50A50A

IGP20N60H3IGP20N60H3


IKW20N60H3IKW20N60H3


IKW40N60H3IKW40N60H340A40A

IGW50N60H3IGW50N60H3

IGW40N60H3IGW40N60H340A40A

15A15A IKW15N120H3IKW15N120H3



15A15A IGP15N120H3IGP15N120H3

IGP25N120H3IGP25N120H325A25A


TO-247

600V 1200V

25A25A

IGB20N60H3*IGB20N60H3*

IGB30N60H3*IGB30N60H3*

TO-263

IKB20N60H3*IKB20N60H3*

IKB30N60H3*IKB30N60H3*

IKP20N60H3*IKP20N60H3*

IKP20N60H3*IKP20N60H3*

IKW50N60H3IKW50N60H350A

75A75A IKW75N60H3*IKW75N60H3*

√ Devices are fully released! * Engineering samples October 2010

TrenchStop IGBT for low switching frequency


at T C =100°C

TO-247

IKW20N60TIKW20N60T

Du

oP

ack

™D

uo

Pac

k ™

IKW30N60TIKW30N60T

20A20A

30A30A

IKW50N60TIKW50N60T

IKW75N60TIKW75N60T

50A50A

75A75A


at T C =100°C

TO-247

Du

oP

ack™ 15A

25A

40A

IKW15N120T2

IKW25N120T2

IKW40N120T2

Vce(sat) @25°C=1.5V Vce(sat) @25°C=1.75V

Polarity selection switch

@50Hz switching frequency

conduction loss dominated


Content





23/4/18

This is a huge application potential for Schottky diode in high voltage application, but …

… today’s voltage range of Schottky ends at 250V

Reasons:

very high leakage currents (reverse loss~forward loss)

on resistance increases with Ubr2.5 and increasing the area

again increases the reverse loss

With SiC Schottky diodes the range can be extended exceeding 1000V

23/4/18

SiC feature fast forward conductionReduce the Maximum VDS Stress of Power MOSFET!

Replacement of diode allows spike reduction of more than 100 V

Full switching speed range of boost MOSFET useable for highest efficiency

Very low Vds spikewith SiC Schottky diode

Improved gate waveform

VDS spike up to 600 V with extremely fast switching boost MOSFET and competitors tandem diode

High losses and EMI problems

Using competitor tandem diode Using SiC Schottky diode

Due to unipolar nature of shottky,No need for forward recorver

time to get conductive

Vgs

VgsVds

Vds

23/4/18

Zero reverse recovery charge only with unipolar devices… SiC Schottky diode

Not possible with Si technology at 600 V rating……therefore SiC Schottky diode concept required!

-6

-4

-2

0

2

4

6

0.05 0.1 0.15 0.2 0.25 0.3

Time [µs]

I [A

]

SiC Schottky diode: 6A, 600VSi-pn Tandem diode 8A, 600VStandard Ultrafast 5A, 600V pn-diode

T=125°C, UAK=400V

IF=6A, di/dt=200A/ms

23/4/18

Switching loss of SiC keep constant vs Io,Rg and Tc

Advantages of your design: switching loss does not change with load condition, Rg of Boost MOSFET and temperature.

23/4/18

Ruggedness and improved surge current capability @ elevated Tc (Infineon Patented)

0

5

10

15

20

25

30

35

40

0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00VF (V)

I F (A

)

curr

ent s

urge

cap

abili

tyLow p

ower dissip

ation

at opera

tion m

ode

bipolar pn diodeforward characteristic

Ideal characteristic: merged pn-

Schottky diode

unipolar diode forward

characteristic

23/4/18

SiC diode 3rd generation Package updated

Average creepagedistance 1.78mm

Average creepagedistance 3.64mm

TO-220 real 2pin package

2G 3G

Creepage distance improved by a factor of 2

Besides, SiC diode in SMD package is available

23/4/18

SiC 3rd generation RthJC updated

Thin soldering technique reduces dramatically solder contribution to RthJC Thermal margin (Tcase) in your design may be improved.

Reduction of thermal resistance junction to case

New die attachment methodDiffusion soldering technology

23/4/18

SiC 3rd generation stored Qc updated

3G offers ever lowestQc(Qrr) per givencurrent rating in themarket

Enable higher switching frequency and smaller form-factor design

Reduction of device capacitances

23/4/18

Voltage P/N IF QC Package Package

IDD03SG60C 3.0 A 3.2 nC In mass productionIDD04SG60C 4.0 A 4.5 nC In mass productionIDD05SG60C 5.0 A 6.0 nC In mass productionIDD06SG60C 6.0 A 8.0 nC In mass productionIDD08SG60C 8.0 A 12.0 nC In mass productionIDD09SG60C 9.0 A 15.0 nC In mass productionIDD10SG60C 10.0 A 16.0 nC In mass productionIDD12SG60C 12.0 A 19.0 nC In mass production

IDH03SG60C 3.0 A 3.2 nC In mass productionIDH04SG60C 4.0 A 4.5 nC In mass productionIDH05SG60C 5.0 A 6.0 nC In mass productionIDH06SG60C 6.0 A 8.0 nC In mass productionIDH08SG60C 8.0 A 12.0 nC In mass productionIDH09SG60C 9.0 A 15.0 nC In mass productionIDH10SG60C 10.0 A 16.0 nC In mass productionIDH12SG60C 12.0 A 19.0 nC In mass productionIDH05S120 5.0 A 18.0 nC In mass productionIDH08S120 7.5 A 27.0 nC In mass productionIDH10S120 10.0 A 36.0 nC In mass productionIDH15S120 15.0 A 54.0 nC In mass production

1200V

600V

600V

SiC Diode Portfolio overview

DPAK(TO-252)

TO-220 real 2pin

23/4/18

1200V SiC Diode in TO-247HC

IDY10S120 IDY15S120

package pin dimensions compatible to TO3P / TO247

full green package (RoHS compliant & halogen free)

high creepage / air distance of 6.35 / 3.6mm at pins

no pin shoulders

distance “screw hole center” to “pin out plain” is compatible to TO247 / TO3P => no change of heatsink design required

23/4/18

SiC Diode in TO220FullPAK package

System cost / size savings due to

reduced cooling requirements

Good thermal performance without

the need for additional isolation layer

and washer

Higher system reliability due to

lower operating temperatures

and less fans

IDV02S60C 2AIDV03S60C 3A IDV04S60C 4AIDV05S60C 5AIDV06S60C 6A

Summary

Explore our website, put us to the test and see why Infineon's power semiconductors lead to your Superior Solutions.

CoolMOS (500V~900V)

¬ www.infineon.com/CoolMOS

OptiMOS (25V~250V)

¬ www.infineon.com/OptiMOS

IGBT

¬ www.infineon.com/IGBT

SiC diode (600V/1200V)

¬ www.infineon.com/SiC

18.04.23

Documents

High efficiency system design with Infineon power discretes -Infineon CoolMOS TM,OptiMOS TM, IGBT and SiC diode Vincent Zeng( 曾伟权 ) System application