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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Giulio PellegriniGiulio Pellegrini
3D detector technology at CNM3D detector technology at CNM
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
MotivationMotivation
Equal detectors thickness
W2D>>W3D
Equal detectors thickness
W2D>>W3D
h+
e-
-ve +veSiO2
W3D
E
Bulkh+
e-
+ve
E
p+
n
n+
W2D
+ve
Short distance between electrodes:•low full depletion voltage•short collection distance
more radiation tolerant than planar detectors!!
•No charge sharing
DRAWBACK: Fabrication process rather long and not standard => mass production of 3D devices very critical and very expensive.
S.I. Parker, C.J. Kenney, J. Segal, Nucl. Instr. Meth. Phys. Res. A 395 (1997) 328
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
ApplicationsApplicationsImaging
Radiation Hardness
High resistiv itySem iconductor
Pixel readout
Electronics ch ip
X-ray photon
Passivation layer
Solder bum p
PN N
0,0 5,0x1015 1,0x1016 1,5x1016 2,0x10160
5000
10000
15000
20000
250000,0 3,2x1015 6,4x1015 9,6x1015
fluence(n/cm2) 10 yrs at SLHC
Sig
na
l (e
-)
fluence(p/cm2)
Strip p-type prot. irr. (Casse et al.) 3D detectors prot. irr. (DaVia et al.) Strip p-type neutr. irr. (Pellegrini et al.)
extrapolated
10 yrs at LHC
*Dear-Mama: A photon counting X-ray imaging project for medical applications, Nuclear Instruments and Methods A 569 (2006) 136–139
*
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Layout and simulationLayout and simulation
Passivation
n+ doped
55um pitch
50-0um
300-250ump- type substrate
p+ doped
10um
Oxide0.4um1um
p+ doped
Metal
Poly 3um
OxideMetal
P-stop p+
50-0um TEOS 2um
5um
G. Pellegrini Presented at the 2nd Trento Workshop on Advanced Silicon Radiation Detectors, Trento, 2006. Available online at: http://tredi.itc.it
ISETcad 3D Simulation
D. Pennicard, “Simulation Results from Double-Sided 3D Detectors”, presented at the 2006 Nuclear Science Symposium.
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Medipix2
Diodes 2Dspreading
Test structures
Atlas pixel
3d pads
strips
Long strip
10x10 matrixMOS
Test for SEM
Mask designMask design
3x3 matrix
Pilatus
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
ALCATEL 601-EALCATEL 601-E- Deep RIE-ICP.
- Load-lock manual one 4” wafer
- SF6 etching
-C4F8 passivation
-cooled mechanical clamping :He-Ln2
-Possibility of Cryogenic etching.
Substrate Gases
Silicon SF6, C4F8
Silicon Dioxide C4F8
Silicon Nitride SF6, C4F8
Silicon Carbide SF6,O2
G. Pellegrini et al., “Technology development of 3D detectors for high-energy physics and imaging” Nuclear Instruments and Methods A 487, Issues 1-2, 11 July 2002, Pages 19-26.
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Aspect RatioAspect Ratio
0 20 40 60 80 1000
50
100
150
200
250
300
350
400
450
500
De
pth
(um
)
Etching time(min.)
Holes diameter 5 um 10 um 15 um 20 um 25 um 30 um 50 um 100 um
0 20 40 60 80 1000
5
10
15
20
25
30
35
as
pe
ct
rati
o
Etching time(min.)
Hole diameter 5 um 10 um 15 um 20 um 25 um 30 um 50 um 100 um
• 10 m holes• 55m pitch• 90 minutes etching• 300 m thick wafer• Aspect ratio 24:1 3µm holes
5µm hole
G. Pellegrini et al. “Double Sided 3D Detector Technologies at CNM-IMB” submitted to IEEE TNS
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
PolysiliconPolysiliconPolysilicon Thickness=3m
Poly etched with RIEStandard resist mask
9.4m
2.9m
5.7m4m
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Spreading resistance
0 1 2 3 4 51E12
1E13
1E14
1E15
1E16
1E17
1E18
1E19
1E20
Co
nc.
(cm
-3)
Distance (m)
Doping diffusion PhosphorusDoping diffusion Phosphorus
Polysilicon thickness 2m
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Doping diffusion, PhosphorusDoping diffusion, Phosphorus
Junction Depth=660nm
Polysilicon Thickness=2m
Phosphorus diffusionTemp.=1050ºC
top bottom
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Doping diffusion, BoronDoping diffusion, Boron
Concentration profile
14,000
16,000
18,000
20,000
0 1 2 3 4 5 6 7 8 9 10Depth X (µm)
log
(Co
nce
ntr
atio
n)
[lo
g(c
m-3
)]
3399-1
3399-2
3399-3
3399-4
3399-5
3399-6
wafer number
Sheet Resistance(/sq)
sigma TempExtra time
1 1,1 2% T0+ No
2 0,97 3% T0+ Yes
3 1,8 2% T0 No
4 1,4 1% T0 Yes
5 2,9 2% T0- No
6 2,6 2% T0- Yes
Polysilicon Thickness=3m
Simulation and experimental results
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Doping diffusion, BoronDoping diffusion, Boron
2.9m
TEOSPoly
Junction
n
p+ 10m
Boron diffusionWafer 3
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
CharacterizationCharacterization
Characterization performed jointly between Glasgow, Liverpool, IFIC (Valencia ) and CNM (Barcelona)
I-V, C-V, and Charge Collection with beta source (90Sr) and IR laser at low temperature.
Development of a general purpose electronics readout based on LHCb (Beetle) chip *
* R. Marco et al. Alibava : A portable readout system for silicon microstrip sensors. 12th Workshop on Electronics for LHC and Future Experiments. September 2006, Valencia SPAIN
ATLAS SCTDAC readout for p-type sensors
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Glasgow 3D workGlasgow 3D work
Si-n+
poly-n+
Si-p+poly-p+
SiO2
SiO2
passivation
Si(n)
Metal
Glasgow/Diamond signed a contract to work on 3D detector development with: IceMOS Tech Ltd (Belfast)
N.I. Semiconductor company specialized in:
• Trench etch and refill technology
• Thinning
• Wafer bondingIn house ability for all required stages to make
3D detectors
First stage to perform test runs on processing stages
• Dense high aspect ratio hole arrays• Hole doping and filling optimisation
Second stage : Full 3D detectors
• Pixel devices (Medipix and Pilatus)• Strip devices• Pad detectors
All readout via p-type holes onlyFull detectors by Q1-Q2 2007
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Bump bonding test Bump bonding test structuresstructures
Central ground bus d-side
Probe cardtest pads
c-side
M. Ullán et al., “Test structure assembly for bump bond yield evaluation in high density flip chip technologies”,Microelectronics and Reliability, Vol. 46, no. 7, Jul 2006, Pages 1095-1100
The total yield of the assembly (Y) can be written in terms of the ratio of bad chains to good chains () as:
11log1
)( L
Y
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
Stripixel 3dStripixel 3d
Ready to be tested and irradiated
Z. Li, W. Chen, Y.H. Guo, D. Lissauer, D. Lynn, V. Radeka, M. Lozano, G. Pellegrini “Development of New 3d Si Detectors at BNL and CNM” Submitted to TNS IEEE
Joined fabrication between BNL and CNM
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
INTAS project with CERN for the fabrication of next TOTEM detectors.
G. Ruggiero et al., “Planar Edgeless Silicon Detectors for the TOTEM Experiment”, Nuclear Science Symposium Conference Record, 2004 IEEE Volume 2, 16-22 Oct. 2004 Page(s):922 - 924.
Strips Guard ring Current Terminating Ring
25m
-30 -20 -10 0 10 20 30 40 50 60 70 80 90 1000
20
40
60
80
100
B-B` A-A`
Re
lativ
e c
ha
rge
(%)
Distance(m)
Edgeless detectorsEdgeless detectors
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
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Giulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, SpainGiulio Pellegrini 4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain4th SILC Collaboration Meeting, 18-20 Dec. 2006, Barcelona, Spain
ConclusionsConclusions
•CNM clean room facilities are ready for small production of 3D detectors. •First 3D detectors ready for the end of January 2007.•Commercial partner ready for R&D.•Manpower: IFIC (2), Glasgow (5), CNM (3)•Characterization of 3D detectors:
• IFIC and Glasgow: beta and laser setup, simulation• CNM: IV,CV and imaging
•Contribution to the R&D: design, simulation, fabrication, bump bonding, characterization, radiation hardness, imaging.
•Expression of interest from different institutes for the b-layer replacement in the future Atlas upgrade experiment.