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FUJITSU SEMICONDUCTOR LIMITED©2010-2013 FUJITSU SEMICONDUCTOR LIMITED Printed in JapanAD07-00051-8E January 2013Edited: Sales Promotion Department
For further information please contact:
North and South AmericaFUJITSU SEMICONDUCTOR AMERICA, INC.1250 E. Arques Avenue, M/S 333Sunnyvale, CA 94085-5401, U.S.A.Tel: +1-408-737-5600 Fax: +1-408-737-5999http://us.fujitsu.com/micro/
EuropeFUJITSU SEMICONDUCTOR EUROPE GmbHPittlerstrasse 47, 63225 Langen, GermanyTel: +49-6103-690-0 Fax: +49-6103-690-122http://emea.fujitsu.com/semiconductor/
KoreaFUJITSU SEMICONDUCTOR KOREA LTD.902 Kosmo Tower Building, 1002 Daechi-Dong,Gangnam-Gu, Seoul 135-280, Republic of KoreaTel: +82-2-3484-7100 Fax: +82-2-3484-7111http://kr.fujitsu.com/fsk/
Asia PacificFUJITSU SEMICONDUCTOR ASIA PTE. LTD.151 Lorong Chuan, #05-08 New Tech Park 556741 SingaporeTel: +65-6281-0770 Fax: +65-6281-0220http://sg.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District, Shanghai 201204, ChinaTel: +86-21-6146-3688 Fax: +86-21-6146-3660http://cn.fujitsu.com/fss/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.2/F, Green 18 Building, Hong Kong Science Park,Shatin, N.T., Hong KongTel: +852-2736-3232 Fax: +852-2314-4207http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.The contents of this document are subject to change without notice.Customers are advised to consult with sales representatives before ordering.The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions.Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
FUJITSU SEMICONDUCTOR LIMITEDNomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,Kohoku-ku Yokohama Kanagawa 222-0033, JapanTel: +81-45-415-5858http://jp.fujitsu.com/fsl/en/
ARM™ Core based FM3 FamilyMicrocontrollers
Starter Kit Starter Kit for FM3 Family is available from IAR SYSTEMS and ARM Ltd. KEIL.You can select either the high-performance board (IAR SYSTEMS) or the simple board (ARM Ltd. KEIL) depending on your application.
●Starter Kit by IAR SYSTEMSYou can carry out evaluation on the board using Starter Kit with JTAG ICE by IAR SYSTEMS.
●Starter Kit by ARM Ltd. KEILYou can carry out evaluation on the simple board using Starter Kit by ARM Ltd. KEIL.
Socket BoardVarious socket boards for FM3 Family are available from TOKYO ELETECH Corporation.Pin assignment on FM3 Family microcontrollers is designed to provide backward compatibility; therefore, multiple microcontrollers of any line and any group can be evaluated on a single socket board as long as the number of pins and pitch are the same.
Board parts Sample softwareLEDPin headerUSB HOSTUSB Function
Blinking LEDUSB Host (HID class: Connecting the mouse and blinking LED)USB Mouse (mouse simulation by the board)USB Virtual COM (USB connection to a COM port on the PC)
Board parts Sample softwareLEDPin headerUSB HOSTUSB Function10/100Ethernet
Blinking LEDUSB Host (HID class: Connecting the mouse and blinking LED)USB Mouse (mouse simulation by the board)USB Virtual COM (USB connection to a COM port on the PC)embOS by Segger MicrocontrollerThreadX (downloadable from the Express Logic, Inc. website)
Board parts Sample softwareLEDVolume
Blinking LEDAdjusting LED blinking speed
Board parts(e.g. 100 pins, 0.5 mm QFP) Functions
LEDUSBCANICE interfaceIC socket
Blinking LEDHost and device functionsCAN communicationsJTAG, ETM, and SICA supportOn the device (with a cover)
MB9BF516R evaluation kit (KSK-MB9BF516R)
MB9BF618T evaluation kit (KSK-MB9BF618T)
Fujitsu originalFlash technology
Features of FM3 family●Fusion of Fujitsu’s unique flash technology with the global-standard CPU core
By using our unique flash technology with application records in industrial/consumer equipment and in-vehicle equipment, achieved to commercialize “Cortex-M3” built-in microcontroller, the global-standard CPU core in integration market. This provides a new form of microcontrollers which offers high reliability, high quality, and high functionality.
●Inheritance of the peripheral functions of microcontroller from Fujitsu original products“FM3 family” also inherits the peripheral functions of microcontroller from Fujitsu original products, including multifunctional serial where the customer can freely choose from UART/SIO/I2C communication functions, multifunctional timer, clock supervisor that monitors the state of an external oscillator clock, built-in CR oscillator, etc.
FM3 Family with globally promoted ARM Cortex-M3 Core, is universal microcontrollers targeted at various areas including consumer and industrial equipment markets.The lineup includes four groups from 16-bit to 32-bit microcontroller classes according to the purposes. FM3 Family provides customers with superior usability and values with flash technology and microcontroller peripheral functions whose performance has been proven in our existing microcontrollers, and built-in Cortex-M3 Core optimized for the embedded market.
Assisting customers' platform implementation with the universal microcontrollers with ARM core
Providing theNo. 1 product
Global CPU core（ARM™ Cortex™-M）
Global coreARM Cortex-M3
High performance andwide range operations
144MHz（max）1.65-3.6V/1.8-5.5V/2.7-5.5V
Flexible peripheral functionsMultifunctional serial
for Motor, Base timer, and Multifunctional timer
Flash memoryCan be overwritten up to
100,000 timesFlash security
High-performanceanalog IP
Built-in CR oscillatorHigh-speed 12-bit A/D
Safety circuitH/W watchdog timer
Low-voltage detection circuitClock supervisor
Communication functionsCAN, USB,Ethernet
Differentiate the performance and added values of microcontroller productswith built-in technology for peripheral resources, software, and supports
ARM and Cortex are the trademarks of ARM Limited in the EU and other countries.
FM3 Family Product LineupFM3 Family consists of products of four category groups.
High-Performance GroupMaximum operating frequency: 144 MHzOperating voltage: 2.7 to 5.5 VEthernet/CAN/USB IPThe flagship model mainly for industrial markets
Basic GroupMaximum operating frequency: 72 MHzOperating voltage: 2.7 to 5.5 VCAN/USB IPGeneral purpose model mainly for white goods
Low-Power GroupMaximum operating frequency: 40MHzOperating voltage: 1.65 to 3.6VUSB/LCDC/HDMI-CEC IPPower saving model for general house appliances
Ultra Low-Leak GroupMaximum operating frequency: 20 MHzOperating voltage: 1.8 to 5.5VLCDC/HDMI-CEC IPLow-leakage model suitable for battery powered goods
[Flash/RAM size]
[Pins]
1MB/128KB
768KB/96KB
512KB/64KB★32KB
384KB/48KB★32KB
256KB/32KB
128KB/16KB★8KB
64KB/16KB★8KB
MB9AFx24K MB9AFx14L MB9AFx14M MB9AFx14N
MB9AFx11K MB9AFx11L MB9AFx11M
MB9AFx12K MB9AFx12L MB9AFx12M MB9AFx12N
MB9AFx32M MB9AFx32N
MB9AFx31L MB9AFx31M MB9AFx31N
MB9AFx42L MB9AFx42M MB9AFx42N
MB9AFx41L MB9AFx41M MB9AFx41N
MB9AFx44L MB9AFx44M MB9AFx44N MB9AF154R
MB9AF155M MB9AF155N MB9AF155R
MB9AF156M MB9AF156N MB9AF156R
MB9BFxx2N MB9BFxx2R
MB9BFxx4N MB9BFxx4R
MB9BFxx5N MB9BFxx5R
MB9BFxx6N MB9BFxx6R MB9BFx16S MB9BFx16T
MB9BFx17S MB9BFx17T
MB9BFx18S MB9BFx18T
★★ ★★
★★ ★★
★★ ★★
★★ ★★
32 48 64 80 100 120 144 176～
High-Performance Group： 144MHz
Basic Group： 40MHz to 72MHz
Low-Power Group： 40MHz
Ultra Low-Leak Group： 20MHz
MB9AFx32K MB9AFx32L
MB9AFx31K
MB9AFx15M MB9AFx15N
MB9AFx16M MB9AFx16N
Products with are equipped with the size of RAM also marked with on the left.★★★★
For the latest news:Fujitsu FM3 Search
Microcontroller Road MapFM3 Family covers the product areas of FR Family with our unique 32-bit CPU core and F2MC-16LX Family with also our unique 16-bit CPU core.Also FM3 Family continues to enhance its lineup for microcontrollers with ARM Cortex-M4 and Cortex-M0+ cores.
Product Concept
FM3 Family Product Development and Targeted ApplicationsYou can select the most suitable product for wide-ranging applications. 570 models are scheduled to be released in 2012.
Development tools●Customer’s development is supported by development tools which have a track record of achievement
We support your system development by various development tools (integrated development environment, debugging environment, middleware, etc.) of third party providers who have a track record in many ARM-core integrated products.In addition, contact our technical support center for inquiries regarding development.
32bit MCU32bit MCU
16bit MCU16bit MCU
8bit MCU8bit MCUF2MC-16LXF2MC-16LX
F2MC-8FXF2MC-8FXNew 8FXNew 8FX
FR80SFR80SFR60FR60
FR60LiteFR60Lite
ARMNextARMNext
10MIPS
100MIPS
200MIPS
400MIPS
20MIPS
2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Year
ARMCortex-M4
ARMCortex-M4
ARMCortex-M0+
ARMCortex-M0+
ARM Cortex-M3ARM Cortex-M3
Cortex-M4 core products
"High performance"
Cortex-M3core products
"Universal"
Cortex-M0+core products
"Power saving"
For industrial equipment- Arithmetic operation performance improvement up to 200 MIPS by FPU/DSP- Operating frequency from 160 MHz
For wide-ranging devices such as AV devices and white goods- More than 500 models to choose from - Operating frequency: 20 MHz to 144 MHz
For white goods, battery powered devices, and sensor control- Ultimate power saving by low-power consumption architecture - Operating frequency: 20 MHz to 40 MHz
Cortex-M4
Cortex-M3
Cortex-M0+
～CY12 CY13～ Target
Low
-end
Hig
h-en
dPe
rfor
man
ce
Ethernet+CAN +USB
144MHz, 2.7V～5.5V100/120/144/176pin Standard
+CAN +USB72MHz, 2.7V～5.5V
48/64/80pinStandard+CAN +USB
40MHz, 2.7V～5.5V48/64/80/100/120pin
Low Power+USB +LCD
40MHz, 1.65V～3.6V64/80/100/120pin
Standard+LCD
20MHz, 1.8V～5.5V48/64/80/100pin
FA-Network
FA-Motor
HA-Inverter
Mobile
HA-MotorHMI
Meter
Sensor
AV
FA-Inverter
DSP & FPU
Large Memory60MHz, 2.7V～5.5V
144/176/192pin
Low Power
Low Pin72MHz, 2.7V～5.5V
32pin
Low pin + CAN20MHz, 2.7V～5.5V
48/64pin
Basic Group
High-Performance Group
Low-Power Group
Ultra Low-Leak Group
FUJITSU SEMICONDUCTOR LIMITED©2010-2013 FUJITSU SEMICONDUCTOR LIMITED Printed in JapanAD07-00051-8E January 2013Edited: Sales Promotion Department
For further information please contact:
North and South AmericaFUJITSU SEMICONDUCTOR AMERICA, INC.1250 E. Arques Avenue, M/S 333Sunnyvale, CA 94085-5401, U.S.A.Tel: +1-408-737-5600 Fax: +1-408-737-5999http://us.fujitsu.com/micro/
EuropeFUJITSU SEMICONDUCTOR EUROPE GmbHPittlerstrasse 47, 63225 Langen, GermanyTel: +49-6103-690-0 Fax: +49-6103-690-122http://emea.fujitsu.com/semiconductor/
KoreaFUJITSU SEMICONDUCTOR KOREA LTD.902 Kosmo Tower Building, 1002 Daechi-Dong,Gangnam-Gu, Seoul 135-280, Republic of KoreaTel: +82-2-3484-7100 Fax: +82-2-3484-7111http://kr.fujitsu.com/fsk/
Asia PacificFUJITSU SEMICONDUCTOR ASIA PTE. LTD.151 Lorong Chuan, #05-08 New Tech Park 556741 SingaporeTel: +65-6281-0770 Fax: +65-6281-0220http://sg.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD.30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District, Shanghai 201204, ChinaTel: +86-21-6146-3688 Fax: +86-21-6146-3660http://cn.fujitsu.com/fss/
FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD.2/F, Green 18 Building, Hong Kong Science Park,Shatin, N.T., Hong KongTel: +852-2736-3232 Fax: +852-2314-4207http://cn.fujitsu.com/fsp/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.The contents of this document are subject to change without notice.Customers are advised to consult with sales representatives before ordering.The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions.Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
FUJITSU SEMICONDUCTOR LIMITEDNomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,Kohoku-ku Yokohama Kanagawa 222-0033, JapanTel: +81-45-415-5858http://jp.fujitsu.com/fsl/en/
ARM™ Core based FM3 FamilyMicrocontrollers
Starter Kit Starter Kit for FM3 Family is available from IAR SYSTEMS and ARM Ltd. KEIL.You can select either the high-performance board (IAR SYSTEMS) or the simple board (ARM Ltd. KEIL) depending on your application.
●Starter Kit by IAR SYSTEMSYou can carry out evaluation on the board using Starter Kit with JTAG ICE by IAR SYSTEMS.
●Starter Kit by ARM Ltd. KEILYou can carry out evaluation on the simple board using Starter Kit by ARM Ltd. KEIL.
Socket BoardVarious socket boards for FM3 Family are available from TOKYO ELETECH Corporation.Pin assignment on FM3 Family microcontrollers is designed to provide backward compatibility; therefore, multiple microcontrollers of any line and any group can be evaluated on a single socket board as long as the number of pins and pitch are the same.
Board parts Sample softwareLEDPin headerUSB HOSTUSB Function
Blinking LEDUSB Host (HID class: Connecting the mouse and blinking LED)USB Mouse (mouse simulation by the board)USB Virtual COM (USB connection to a COM port on the PC)
Board parts Sample softwareLEDPin headerUSB HOSTUSB Function10/100Ethernet
Blinking LEDUSB Host (HID class: Connecting the mouse and blinking LED)USB Mouse (mouse simulation by the board)USB Virtual COM (USB connection to a COM port on the PC)embOS by Segger MicrocontrollerThreadX (downloadable from the Express Logic, Inc. website)
Board parts Sample softwareLEDVolume
Blinking LEDAdjusting LED blinking speed
Board parts(e.g. 100 pins, 0.5 mm QFP) Functions
LEDUSBCANICE interfaceIC socket
Blinking LEDHost and device functionsCAN communicationsJTAG, ETM, and SICA supportOn the device (with a cover)
MB9BF516R evaluation kit (KSK-MB9BF516R)
MB9BF618T evaluation kit (KSK-MB9BF618T)
Hig
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P-1
00
LQ
FP
-100
BG
A-1
12
256K
+ 32
K32
K83
MB
9BF1
14R
LQ
FP
-120
103
MB
9BF1
15N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
384K
+ 32
K48
K83
MB
9BF1
15R
LQ
FP
-120
103
MB
9BF1
16N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
512K
+ 32
K64
K83
MB
9BF1
16R
LQ
FP
-120
103
MB
9BD
10T
MB
9BFD
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
),Q
uad
coun
ter ×
3, D
ual T
imer
,C
AN
: 32M
sg-b
uffe
r, E
ther
net-M
AC
× 2
ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BFD
16S
LQ
FP
-144
122
24 （
3）M
B9B
FD17
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
FD17
SLQ
FP
-144
122
24 （
3）M
B9B
FD18
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BFD
18S
LQ
FP
-144
122
24 （
3）
MB
9B61
0T
MB
9BF6
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
, E
ther
net-M
AC×
2ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF6
16S
LQ
FP
-144
122
24 （
3）M
B9B
F617
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F617
SLQ
FP
-144
122
24 （
3）M
B9B
F618
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF6
18S
LQ
FP
-144
122
24 （
3）
MB
9B51
0T
MB
9BF5
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
,C
AN
: 32M
sg-b
uffe
r
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF5
16S
LQ
FP
-144
122
24 （
3）M
B9B
F517
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F517
SLQ
FP
-144
122
24 （
3）M
B9B
F518
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF5
18S
LQ
FP
-144
122
24 （
3）
MB
9B41
0T
MB
9BF4
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2-
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er,
CA
N: 3
2Msg
-buf
fer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF4
16S
LQ
FP
-144
122
24 （
3）M
B9B
F417
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F417
SLQ
FP
-144
122
24 （
3）M
B9B
F418
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF4
18S
LQ
FP
-144
122
24 （
3）
Series Name
Product Name
Maximum Internal ClockFrequency [MHz]
Package
Operating Voltage:VCC [V]
Sub Clock
Memory Type
ROM [byte]
RAM [byte]
DMAC [ch]
Ext. Interupt [ch]
External Bus
Maximum I/O port [ch]
12bit AD converter[ch (unit) ]
DA Converter[bit x ch]
Tim
erSe
rial
Com
mun
icat
ion
LCD Controller[seg x com]
Tree-phase Inverter
Note
Evaluation Device
Reload Timer[ch]
PWM Timer[ch]
PWC Timer[ch]
PPG Timer[ch]
Other Timers[ch]
I2C
[ch]
UART/SIO [ch]
SIO [ch]
LIN/UART/SIO [ch]
CAN [ch]
USB-Host [ch]
USB-Function [ch]
Family
MB
9B31
0T
MB
9BF3
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF3
16S
LQ
FP
-144
122
24 （
3）M
B9B
F317
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F317
SLQ
FP
-144
122
24 （
3）M
B9B
F318
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF3
18S
LQ
FP
-144
122
24 （
3）
MB
9B21
0T
MB
9BF2
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
E
ther
net-M
AC×
1ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF2
16S
LQ
FP
-144
122
24 （
3）M
B9B
F217
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F217
SLQ
FP
-144
122
24 （
3）M
B9B
F218
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF2
18S
LQ
FP
-144
122
24 （
3）
MB
9B11
0T
MB
9BF1
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF1
16S
LQ
FP
-144
122
24 （
3）M
B9B
F117
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F117
SLQ
FP
-144
122
24 （
3）M
B9B
F118
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF1
18S
LQ
FP
-144
122
24 （
3）
MB
9B50
0B
MB
9BF5
04N
B
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF5
04R
BLQ
FP
-120
100
MB
9BF5
05N
BLQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F505
RB
LQ
FP
-120
100
MB
9BF5
06N
BLQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F506
RB
LQ
FP
-120
100
MB
9B40
0A
MB
9BF4
04N
A
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2-
--
○M
ulti-
Func
tion
Tim
er ×
2un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF4
04R
ALQ
FP
-120
100
MB
9BF4
05N
ALQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F405
RA
LQ
FP
-120
100
MB
9BF4
06N
ALQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F406
RA
LQ
FP
-120
100
MB
9B30
0B
MB
9BF3
04N
B
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF3
04R
BLQ
FP
-120
100
MB
9BF3
05N
BLQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F305
RB
LQ
FP
-120
100
MB
9BF3
06N
BLQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F306
RB
LQ
FP
-120
100
MB
9B10
0A
MB
9BF1
02N
A
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
128K
16K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○M
ulti-
Func
tion
Tim
er ×
2un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF1
02R
ALQ
FP
-120
100
MB
9BF1
04N
ALQ
FP
-100
BG
A-1
12
256K
32K
80M
B9B
F104
RA
LQ
FP
-120
100
MB
9BF1
05N
ALQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F105
RA
LQ
FP
-120
100
MB
9BF1
06N
ALQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F106
RA
LQ
FP
-120
100
Bas
ic G
roup
MB
9B52
0M
MB
9BF5
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
1
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF5
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
21M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF5
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF5
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
22M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF5
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF5
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
24M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9B32
0M
MB
9BF3
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF3
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
21M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF3
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF3
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
22M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF3
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF3
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
24M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9B12
0M
MB
9BF1
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF1
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F121
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF1
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF1
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F122
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF1
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF1
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F124
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9A31
0A
MB
9AF3
11LA
40
LQ
FP
-64
2.7
to 5
.5○
FLA
SH
64K
16K
8
7-
519 （
2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)5
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(M
B9A
Fxxx
NA
: S
WJ-
DP
/ETM
Oth
ers:
SW
J-D
P)
MB
9AF3
11M
ALQ
FP
-80
11○
6612
（3）
MB
9AF3
11N
ALQ
FP
-100
1683
16 （
3）M
B9A
F312
LALQ
FP
-64
128K
7-
519 （
2）M
B9A
F312
MA
LQ
FP
-80
11○
6612
（3）
MB
9AF3
12N
ALQ
FP
-100
1683
16 （
3）M
B9A
F314
LALQ
FP
-64
256K
32K
7-
519 （
2）M
B9A
F314
MA
LQ
FP
-80
11
○
6612
（3）
MB
9AF3
14N
ALQ
FP
-100
1683
16 （
3）M
B9A
F315
MA
LQ
FP
-80
384K
1166
12 （
3）M
B9A
F315
NA
LQ
FP
-100
1683
16 （
3）M
B9A
F316
MA
LQ
FP
-80
512K
1166
12 （
3）M
B9A
F316
NA
LQ
FP
-100
1683
16 （
3）
MB
9A11
0A
MB
9AF1
11LA
40
LQ
FP
-64
2.7
to 5
.5○
FLA
SH
64K
16K
8
7-
519 （
2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)5
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
--
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(M
B9A
Fxxx
NA
: S
WJ-
DP
/ETM
Oth
ers:
SW
J-D
P)
MB
9AF1
11M
ALQ
FP
-80
11○
6612
（3）
MB
9AF1
11N
ALQ
FP
-100
1683
16 （
3）M
B9A
F112
LALQ
FP
-64
128K
7-
519 （
2）M
B9A
F112
MA
LQ
FP
-80
11○
6612
（3）
MB
9AF1
12N
ALQ
FP
-100
1683
16 （
3）M
B9A
F114
LALQ
FP
-64
256K
32K
7-
519 （
2）M
B9A
F114
MA
LQ
FP
-80
11
○
6612
（3）
MB
9AF1
14N
ALQ
FP
-100
1683
16 （
3）M
B9A
F115
MA
LQ
FP
-80
384K
1166
12 （
3）M
B9A
F115
NA
LQ
FP
-100
1683
16 （
3）M
B9A
F116
MA
LQ
FP
-80
512K
1166
12 （
3）M
B9A
F116
NA
LQ
FP
-100
1683
16 （
3）
MB
9A31
0KM
B9A
F311
K40
LQ
FP
-48
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
64K
+ 32
K16
K4
6-
368 （
2）-
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
)M
B9A
F312
K12
8K+
32K
MB
9A11
0KM
B9A
F111
K40
LQ
FP
-48
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
64K
+ 32
K16
K4
6-
368 （
2）-
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
--
○M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
)M
B9A
F112
K12
8K+
32K
Low
-Pow
er G
roup
MB
9A15
0R
MB
9AF1
54M
40
LQF
P-8
0 B
GA
-96
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
256K
+ 32
K32
K
8
23
○
6617
（2）
-
Bas
e Ti
mer×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
4
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
--
--
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
,H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, Rea
l-tim
e C
lock
, U
niqu
e ID
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
54N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
54R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
55M
LQF
P-8
0 B
GA
-96
384K
+ 32
K48
K
2366
17 （
2）B
ase
Tim
er×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
55N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
55R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
56M
LQF
P-8
0 B
GA
-96
512K
+ 32
K64
K
2366
17 （
2）B
ase
Tim
er×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
56N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
56R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AB
40N
A
MB
9AFB
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
20×
8
-D
ual T
imer
, HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFB
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFB
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFB
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
20×
8
MB
9AFB
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFB
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFB
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
20×
8
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
FB44
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
33×
8
MB
9AFB
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AA
40N
A
MB
9AFA
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
20×
8
-D
ual T
imer
, HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFA
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFA
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFA
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
20×
8
MB
9AFA
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFA
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFA
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
20×
8
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
FA44
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
33×
8
MB
9AFA
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9A34
0NA
MB
9AF3
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
--
Dua
l Tim
er, H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF3
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF3
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF3
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
MB
9AF3
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF3
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF3
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
F344
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
MB
9AF3
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9A14
0NA
MB
9AF1
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
--
Dua
l Tim
er, H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF1
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF1
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
MB
9AF1
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF1
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF1
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
F144
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
MB
9AF1
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
Ultr
a Lo
w-L
eak
Gro
up
MB
9AA
30N
MB
9AFA
31L
20
LQF
P-6
4 Q
FN
-64
1.8
to 5
.5○
FLA
SH
64K
12K
-
8
-
529 （
1）
2B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
24×
4 or
20×
8
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/
PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFA
31M
LQF
P-8
011
6712
（1）
37×
4 or
33×
8
MB
9AFA
31N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
8416
（1）
44×
4 or
40×
8
MB
9AFA
32L
LQF
P-6
4 Q
FN
-64
128K
16K
852
9 （1）
24×
4 or
20×
8
MB
9AFA
32M
LQF
P-8
011
6712
（1）
37×
4 or
33×
8
MB
9AFA
32N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
8416
（1）
44×
4 or
40×
8
MB
9A13
0N
MB
9AF1
31M
20
LQF
P-8
0
1.8
to 5
.5○
FLA
SH
64K
12K
-
11
-
67
12 （
1）
2B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/
PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
31N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
84
MB
9AF1
32M
LQF
P-8
0
128K
16K
1167
16 （
1）M
B9A
F132
NLQ
FP
-100
Q
FP
-100
B
GA
-112
1684
MB
9A13
0LA
MB
9AF1
31LA
20
LQF
P-6
4
1.8
to 5
.5○
FLA
SH
64K
8K-
8
-
528 （
1）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
--
--
○M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/O
utpu
t Com
pare
/Inpu
t Cap
ture
/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
31K
ALQ
FP
-48
637
6 （1）
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e,
CS
IO/I2 C
is M
ax 3
ch)
MB
9AF1
32LA
LQF
P-6
4
128K
852
8 （1）
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
32K
ALQ
FP
-48
637
6 （1）
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e,
CS
IO/I2 C
is M
ax 3
ch)
Hig
h-Pe
rfor
man
ce G
roup
MB
9B51
0R
MB
9BF5
12N
144
QF
P-1
00
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
128K
+ 32
K16
K
816
○
83
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF5
12R
LQ
FP
-120
103
MB
9BF5
14N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
256K
+ 32
K32
K83
MB
9BF5
14R
LQ
FP
-120
103
MB
9BF5
15N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
384K
+ 32
K48
K83
MB
9BF5
15R
LQ
FP
-120
103
MB
9BF5
16N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
512K
+ 32
K64
K83
MB
9BF5
16R
LQ
FP
-120
103
MB
9B41
0R
MB
9BF4
12N
144
QF
P-1
00
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
128K
+ 32
K16
K
816
○
83
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2-
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF4
12R
LQ
FP
-120
103
MB
9BF4
14N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
256K
+ 32
K32
K83
MB
9BF4
14R
LQ
FP
-120
103
MB
9BF4
15N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
384K
+ 32
K48
K83
MB
9BF4
15R
LQ
FP
-120
103
MB
9BF4
16N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
512K
+ 32
K64
K83
MB
9BF4
16R
LQ
FP
-120
103
MB
9B31
0R
MB
9BF3
12N
144
QF
P-1
00
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
128K
+ 32
K16
K
816
○
83
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF3
12R
LQ
FP
-120
103
MB
9BF3
14N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
256K
+ 32
K32
K83
MB
9BF3
14R
LQ
FP
-120
103
MB
9BF3
15N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
384K
+ 32
K48
K83
MB
9BF3
15R
LQ
FP
-120
103
MB
9BF3
16N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
512K
+ 32
K64
K83
MB
9BF3
16R
LQ
FP
-120
103
MB
9B11
0R
MB
9BF1
12N
144
QF
P-1
00
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
128K
+ 32
K16
K
816
○
83
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF1
12R
LQ
FP
-120
103
MB
9BF1
14N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
256K
+ 32
K32
K83
MB
9BF1
14R
LQ
FP
-120
103
MB
9BF1
15N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
384K
+ 32
K48
K83
MB
9BF1
15R
LQ
FP
-120
103
MB
9BF1
16N
QF
P-1
00
LQ
FP
-100
BG
A-1
12
512K
+ 32
K64
K83
MB
9BF1
16R
LQ
FP
-120
103
MB
9BD
10T
MB
9BFD
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
),Q
uad
coun
ter ×
3, D
ual T
imer
,C
AN
: 32M
sg-b
uffe
r, E
ther
net-M
AC
× 2
ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BFD
16S
LQ
FP
-144
122
24 （
3）M
B9B
FD17
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
FD17
SLQ
FP
-144
122
24 （
3）M
B9B
FD18
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BFD
18S
LQ
FP
-144
122
24 （
3）
MB
9B61
0T
MB
9BF6
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
, E
ther
net-M
AC×
2ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF6
16S
LQ
FP
-144
122
24 （
3）M
B9B
F617
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F617
SLQ
FP
-144
122
24 （
3）M
B9B
F618
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF6
18S
LQ
FP
-144
122
24 （
3）
MB
9B51
0T
MB
9BF5
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
,C
AN
: 32M
sg-b
uffe
r
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF5
16S
LQ
FP
-144
122
24 （
3）M
B9B
F517
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F517
SLQ
FP
-144
122
24 （
3）M
B9B
F518
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF5
18S
LQ
FP
-144
122
24 （
3）
MB
9B41
0T
MB
9BF4
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2-
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er,
CA
N: 3
2Msg
-buf
fer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF4
16S
LQ
FP
-144
122
24 （
3）M
B9B
F417
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F417
SLQ
FP
-144
122
24 （
3）M
B9B
F418
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF4
18S
LQ
FP
-144
122
24 （
3）
Series Name
Product Name
Maximum Internal ClockFrequency [MHz]
Package
Operating Voltage:VCC [V]
Sub Clock
Memory Type
ROM [byte]
RAM [byte]
DMAC [ch]
Ext. Interupt [ch]
External Bus
Maximum I/O port [ch]
12bit AD converter[ch (unit) ]
DA Converter[bit x ch]
Tim
erSe
rial
Com
mun
icat
ion
LCD Controller[seg x com]
Tree-phase Inverter
Note
Evaluation Device
Reload Timer[ch]
PWM Timer[ch]
PWC Timer[ch]
PPG Timer[ch]
Other Timers[ch]
I2C
[ch]
UART/SIO [ch]
SIO [ch]
LIN/UART/SIO [ch]
CAN [ch]
USB-Host [ch]
USB-Function [ch]
Family
MB
9B31
0T
MB
9BF3
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF3
16S
LQ
FP
-144
122
24 （
3）M
B9B
F317
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F317
SLQ
FP
-144
122
24 （
3）M
B9B
F318
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF3
18S
LQ
FP
-144
122
24 （
3）
MB
9B21
0T
MB
9BF2
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
2ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 3
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
3, D
ual T
imer
E
ther
net-M
AC×
1ch
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF2
16S
LQ
FP
-144
122
24 （
3）M
B9B
F217
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F217
SLQ
FP
-144
122
24 （
3）M
B9B
F218
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF2
18S
LQ
FP
-144
122
24 （
3）
MB
9B11
0T
MB
9BF1
16T
144
LQ
FP
-176
BG
A-1
92
2.7
to 5
.5○
FLA
SH
512K
64K
832
○
154
32 （
3）
-B
ase
Tim
er ×
16c
h(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
7M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○M
ulti-
Func
tion
Tim
er ×
3un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 3
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF1
16S
LQ
FP
-144
122
24 （
3）M
B9B
F117
TLQ
FP
-176
BG
A-1
92
768K
96K
154
32 （
3）M
B9B
F117
SLQ
FP
-144
122
24 （
3）M
B9B
F118
TLQ
FP
-176
BG
A-1
92
1M12
8K15
432
（3）
MB
9BF1
18S
LQ
FP
-144
122
24 （
3）
MB
9B50
0B
MB
9BF5
04N
B
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF5
04R
BLQ
FP
-120
100
MB
9BF5
05N
BLQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F505
RB
LQ
FP
-120
100
MB
9BF5
06N
BLQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F506
RB
LQ
FP
-120
100
MB
9B40
0A
MB
9BF4
04N
A
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
2-
--
○M
ulti-
Func
tion
Tim
er ×
2un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF4
04R
ALQ
FP
-120
100
MB
9BF4
05N
ALQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F405
RA
LQ
FP
-120
100
MB
9BF4
06N
ALQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F406
RA
LQ
FP
-120
100
MB
9B30
0B
MB
9BF3
04N
B
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
256K
32K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF3
04R
BLQ
FP
-120
100
MB
9BF3
05N
BLQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F305
RB
LQ
FP
-120
100
MB
9BF3
06N
BLQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F306
RB
LQ
FP
-120
100
MB
9B10
0A
MB
9BF1
02N
A
80
LQ
FP
-100
BG
A-1
12
2.7
to 5
.5○
FLA
SH
128K
16K
816
○
80
16 （
3）-
Bas
e Ti
mer
× 8
ch(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
5M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○M
ulti-
Func
tion
Tim
er ×
2un
its (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)
MB
9BF1
02R
ALQ
FP
-120
100
MB
9BF1
04N
ALQ
FP
-100
BG
A-1
12
256K
32K
80M
B9B
F104
RA
LQ
FP
-120
100
MB
9BF1
05N
ALQ
FP
-100
BG
A-1
12
384K
48K
80M
B9B
F105
RA
LQ
FP
-120
100
MB
9BF1
06N
ALQ
FP
-100
BG
A-1
12
512K
64K
80M
B9B
F106
RA
LQ
FP
-120
100
Bas
ic G
roup
MB
9B52
0M
MB
9BF5
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
1
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF5
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
21M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF5
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF5
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
22M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF5
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF5
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF5
24M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9B32
0M
MB
9BF3
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF3
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
21M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF3
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF3
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
22M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF3
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF3
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
MB
9BF3
24M
LQ
FP
-80
BG
A-9
623
6526
（2）
MB
9B12
0M
MB
9BF1
21K
72
LQ
FP
-48
QF
N-4
8
2.7
to 5
.5○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
14
-
3514
（2）
10bi
t x
2
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)
3M
ulti
Func
tion
Ser
ial×
4ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
--
--
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
On-
chip
Deb
ug（
SW
J-D
P）
MB
9BF1
21L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F121
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF1
22K
LQ
FP
-48
QF
N-4
812
8K+
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF1
22L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F122
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9BF1
24K
LQ
FP
-48
QF
N-4
825
6K+
32K
32K
1435
14 （
2）3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
MB
9BF1
24L
LQ
FP
-64
QF
N-6
419
5023
（2）
4M
ulti
Func
tion
Ser
ial×
8ch
(UA
RT/
CS
IO/I2 C
/LIN
Sel
ecta
ble)
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
erM
B9B
F124
MLQ
FP
-80
BG
A-9
623
6526
（2）
MB
9A31
0A
MB
9AF3
11LA
40
LQ
FP
-64
2.7
to 5
.5○
FLA
SH
64K
16K
8
7-
519 （
2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)5
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(M
B9A
Fxxx
NA
: S
WJ-
DP
/ETM
Oth
ers:
SW
J-D
P)
MB
9AF3
11M
ALQ
FP
-80
11○
6612
（3）
MB
9AF3
11N
ALQ
FP
-100
1683
16 （
3）M
B9A
F312
LALQ
FP
-64
128K
7-
519 （
2）M
B9A
F312
MA
LQ
FP
-80
11○
6612
（3）
MB
9AF3
12N
ALQ
FP
-100
1683
16 （
3）M
B9A
F314
LALQ
FP
-64
256K
32K
7-
519 （
2）M
B9A
F314
MA
LQ
FP
-80
11
○
6612
（3）
MB
9AF3
14N
ALQ
FP
-100
1683
16 （
3）M
B9A
F315
MA
LQ
FP
-80
384K
1166
12 （
3）M
B9A
F315
NA
LQ
FP
-100
1683
16 （
3）M
B9A
F316
MA
LQ
FP
-80
512K
1166
12 （
3）M
B9A
F316
NA
LQ
FP
-100
1683
16 （
3）
MB
9A11
0A
MB
9AF1
11LA
40
LQ
FP
-64
2.7
to 5
.5○
FLA
SH
64K
16K
8
7-
519 （
2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)5
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
--
-○
Mul
ti-Fu
nctio
n Ti
mer
× 2
units
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/P
PG
/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r× 2
, Dua
l Tim
er
On-
chip
Deb
ug(M
B9A
Fxxx
NA
: S
WJ-
DP
/ETM
Oth
ers:
SW
J-D
P)
MB
9AF1
11M
ALQ
FP
-80
11○
6612
（3）
MB
9AF1
11N
ALQ
FP
-100
1683
16 （
3）M
B9A
F112
LALQ
FP
-64
128K
7-
519 （
2）M
B9A
F112
MA
LQ
FP
-80
11○
6612
（3）
MB
9AF1
12N
ALQ
FP
-100
1683
16 （
3）M
B9A
F114
LALQ
FP
-64
256K
32K
7-
519 （
2）M
B9A
F114
MA
LQ
FP
-80
11
○
6612
（3）
MB
9AF1
14N
ALQ
FP
-100
1683
16 （
3）M
B9A
F115
MA
LQ
FP
-80
384K
1166
12 （
3）M
B9A
F115
NA
LQ
FP
-100
1683
16 （
3）M
B9A
F116
MA
LQ
FP
-80
512K
1166
12 （
3）M
B9A
F116
NA
LQ
FP
-100
1683
16 （
3）
MB
9A31
0KM
B9A
F311
K40
LQ
FP
-48
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
64K
+ 32
K16
K4
6-
368 （
2）-
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter,
Dua
l Tim
er
On-
chip
Deb
ug(S
WJ-
DP
)M
B9A
F312
K12
8K+
32K
MB
9A11
0KM
B9A
F111
K40
LQ
FP
-48
2.7
to 5
.5○
Mai
n Fl
ash+
W
ork
Flas
h
64K
+ 32
K16
K4
6-
368 （
2）-
Bas
e Ti
mer×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)3
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C/L
IN S
elec
tabl
e)-
--
○M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/Out
put C
ompa
re/
Inpu
t Cap
ture
/PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
Qua
d co
unte
r, D
ual T
imer
On-
chip
Deb
ug(S
WJ-
DP
)M
B9A
F112
K12
8K+
32K
Low
-Pow
er G
roup
MB
9A15
0R
MB
9AF1
54M
40
LQF
P-8
0 B
GA
-96
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
256K
+ 32
K32
K
8
23
○
6617
（2）
-
Bas
e Ti
mer×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
4
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
--
--
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/O
utpu
t Com
pare
/In
put C
aptu
re/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), Q
uad
coun
ter×
2, D
ual T
imer
,H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, Rea
l-tim
e C
lock
, U
niqu
e ID
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
54N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
54R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
55M
LQF
P-8
0 B
GA
-96
384K
+ 32
K48
K
2366
17 （
2）B
ase
Tim
er×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
55N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
55R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
56M
LQF
P-8
0 B
GA
-96
512K
+ 32
K64
K
2366
17 （
2）B
ase
Tim
er×
15ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×10
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP）
MB
9AF1
56N
LQF
P-1
00
QF
P-1
00
BG
A-1
1224
8324
（2）
Bas
e Ti
mer×
16ch
(R
eloa
d/P
PG
/PW
M/P
WC
Sel
ecta
ble)
Mul
ti Fu
nctio
n S
eria
l×14
ch
(UA
RT/
CS
IO/I2 C
Sel
ecta
ble)
On-
chip
Deb
ug
（S
WJ-
DP
/ETM）
MB
9AF1
56R
LQF
P-1
2010
3M
ulti
Func
tion
Ser
ial×
16ch
(U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AB
40N
A
MB
9AFB
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
20×
8
-D
ual T
imer
, HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFB
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFB
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFB
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
20×
8
MB
9AFB
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFB
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFB
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
20×
8
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
FB44
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
33×
8
MB
9AFB
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AA
40N
A
MB
9AFA
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
20×
8
-D
ual T
imer
, HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFA
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFA
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFA
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
20×
8
MB
9AFA
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
33×
8
MB
9AFA
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9AFA
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
20×
8
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
FA44
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
33×
8
MB
9AFA
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）40×
8
MB
9A34
0NA
MB
9AF3
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
1ch
(US
B-H
ost/
US
B-F
unct
ion
Sel
ecta
ble)
--
Dua
l Tim
er, H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF3
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF3
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF3
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
MB
9AF3
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF3
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF3
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
F344
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
MB
9AF3
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9A14
0NA
MB
9AF1
41LA
40
LQF
P-6
4Q
FN
-64
1.65
to 3
.6○
Dua
l Op.
Fla
sh(M
ain
area
+ W
ork
area
)
64K
+ 32
K
16K
8
8-
5112
（2）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
--
Dua
l Tim
er, H
DM
I-CE
C/R
emot
e C
ontro
l Rec
eive
r × 2
, R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
41M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF1
41N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF1
42LA
LQF
P-6
4Q
FN
-64
128K
+ 32
K
8-
5112
（2）
MB
9AF1
42M
ALQ
FP
-80
BG
A-9
611
○
6617
（2）
MB
9AF1
42N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
MB
9AF1
44LA
LQF
P-6
4Q
FN
-64
256K
+ 32
K32
K
8-
5112
（2）
On-
chip
Deb
ug(S
WJ-
DP
/ETM
)M
B9A
F144
MA
LQF
P-8
0 B
GA
-96
11
○
6617
（2）
MB
9AF1
44N
ALQ
FP
-100
Q
FP
-100
B
GA
-112
1683
24 （
2）
Ultr
a Lo
w-L
eak
Gro
up
MB
9AA
30N
MB
9AFA
31L
20
LQF
P-6
4 Q
FN
-64
1.8
to 5
.5○
FLA
SH
64K
12K
-
8
-
529 （
1）
2B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
24×
4 or
20×
8
○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/
PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AFA
31M
LQF
P-8
011
6712
（1）
37×
4 or
33×
8
MB
9AFA
31N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
8416
（1）
44×
4 or
40×
8
MB
9AFA
32L
LQF
P-6
4 Q
FN
-64
128K
16K
852
9 （1）
24×
4 or
20×
8
MB
9AFA
32M
LQF
P-8
011
6712
（1）
37×
4 or
33×
8
MB
9AFA
32N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
8416
（1）
44×
4 or
40×
8
MB
9A13
0N
MB
9AF1
31M
20
LQF
P-8
0
1.8
to 5
.5○
FLA
SH
64K
12K
-
11
-
67
12 （
1）
2B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)-
--
-○
Mul
ti-Fu
nctio
n Ti
mer
× 1
unit
(Fre
e-R
un/
Out
put C
ompa
re/In
put C
aptu
re/
PP
G/W
avef
orm
Gen
erat
or/A
D a
ctiv
atio
n C
ompa
re),
HD
MI-C
EC
/Rem
ote
Con
trol R
ecei
ver ×
2,
Rea
l-tim
e C
lock
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
31N
LQF
P-1
00
QF
P-1
00
BG
A-1
1216
84
MB
9AF1
32M
LQF
P-8
0
128K
16K
1167
16 （
1）M
B9A
F132
NLQ
FP
-100
Q
FP
-100
B
GA
-112
1684
MB
9A13
0LA
MB
9AF1
31LA
20
LQF
P-6
4
1.8
to 5
.5○
FLA
SH
64K
8K-
8
-
528 （
1）
-B
ase
Tim
er×
8ch
(Rel
oad/
PP
G/P
WM
/PW
CS
elec
tabl
e)1
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
--
--
○M
ulti-
Func
tion
Tim
er ×
1un
it (F
ree-
Run
/O
utpu
t Com
pare
/Inpu
t Cap
ture
/P
PG
/Wav
efor
m G
ener
ator
/AD
act
ivat
ion
Com
pare
), R
eal-t
ime
Clo
ck
On-
chip
Deb
ug(S
WJ-
DP
)
MB
9AF1
31K
ALQ
FP
-48
637
6 （1）
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e,
CS
IO/I2 C
is M
ax 3
ch)
MB
9AF1
32LA
LQF
P-6
4
128K
852
8 （1）
Mul
ti Fu
nctio
n S
eria
l×8c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e)
MB
9AF1
32K
ALQ
FP
-48
637
6 （1）
Mul
ti Fu
nctio
n S
eria
l×4c
h (U
AR
T/C
SIO
/I2 C S
elec
tabl
e,
CS
IO/I2 C
is M
ax 3
ch)
![2007.5 FUJITSU LIMITED Product Guide...FUJITSU SEMICONDUCTOR circuit examples, in this document are presented solely for the [Microcomputer] PRODUCT GUIDE 2007.5 ©2007 FUJITSU LIMITED](https://img.dokumen.tips/doc/110x75/5e4b3af7c22c8804e260d1a6/20075-fujitsu-limited-product-guide-fujitsu-semiconductor-circuit-examples.jpg)
