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onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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©2006 Semiconductor Components Industries, LLC.September-2017, Rev. 3

Publication Order Number:FQA11N90-F109/D

1

MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQA11N90-F109 Unit

VDSS Drain to Source Voltage 900 V

ID Drain Current- Continuous (TC = 25oC) 11.4 A

- Continuous (TC = 100oC) 7.2 A

IDM Drain Current - Pulsed (Note 1) 45.6 A

VGSS Gate to Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1000 mJ

IAR Avalanche Current (Note 1) 11.4 A

EAR Repetitive Avalanche Energy (Note 1) 30 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

PD Power Dissipation(TC = 25oC) 300 W

- Derate Above 25oC 2.38 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds

300 °C

Symbol Parameter FQA11N90-F109 Unit

RθJC Thermal Resistance, Junction to Case, Max 0.42 oC/W

RθJA Thermal Resistance, Junction to Ambient, Max 40 oC/W

FQA11N90-F109N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ

Features• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V,

ID = 5.7 A

• Low Gate Charge (Typ. 72 nC)

• Low Crss (Typ. 30 pF)

• 100% Avalanche Tested

• RoHS compliant

DescriptionThis N-Channel enhancement mode power MOSFET is

produced using ON Semiconductor’s proprietary planar stripe

and DMOS technology. This advanced MOSFET technology

has been especially tailored to reduce on-state resistance,

and to provide superior switching performance and high

avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

TO-3PNG

DS

G

S

D

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Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted.

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature.

2. L = 15 mH, IAS = 11.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 11.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4. Essentially independent of operating temperature.

Device Marking Device Package Reel Size Tape Width Quantity

FQA11N90 FQA11N90-F109 TO-3PN Tube N/A 30 units

Symbol Parameter Test Conditions Min Typ Max Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 900 -- -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature Coefficient

ID = 250 μA, Referenced to 25°C -- 1.0 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 900 V, VGS = 0 V -- -- 10 μA

VDS = 720 V, TC = 125°C -- -- 100 μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V

RDS(on)Static Drain-Source On-Resistance

VGS = 10 V, ID = 5.7 A -- 0.75 0.96 Ω

gFS Forward Transconductance VDS = 50 V, ID = 5.7 A -- 12 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 2700 3500 pF

Coss Output Capacitance -- 260 340 pF

Crss Reverse Transfer Capacitance -- 30 40 pF

Switching Characteristics td(on) Turn-On Delay Time

VDD = 450 V, ID = 11.4 A,

RG = 25 Ω

(note 4)

-- 65 140 ns

tr Turn-On Rise Time -- 135 280 ns

td(off) Turn-Off Delay Time -- 165 340 ns

tf Turn-Off Fall Time -- 90 190 ns

Qg Total Gate Charge VDS = 720 V, ID = 11.4 A,

VGS = 10 V (note 4)

-- 72 94 nC

Qgs Gate-Source Charge -- 16 -- nC

Qgd Gate-Drain Charge -- 35 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 11.4 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 45.6 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.4 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 11.4 A,

dIF / dt = 100 A/μs

-- 850 -- ns

Qrr Reverse Recovery Charge -- 11.2 -- μC

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0.2 0.4 0.6 0.8 1.0 1.210

-1

100

101

150※ Notes : 1. V

GS = 0V

2. 250μs Pulse Test

25

I DR,

Rev

erse

Dra

in C

urre

nt [

A]

VSD

, Source-Drain voltage [V]

0 8 16 24 32 400.4

0.8

1.2

1.6

2.0

VGS

= 20V

VGS = 10V

※ Note : TJ = 25

RD

S(O

N) [Ω

],D

rain

-Sou

rce

On-

Re

sist

anc

e

ID, Drain Current [A]

2 4 6 8 1010

-1

100

101

150oC

25oC

-55oC

※ Notes : 1. V

DS = 50V

2. 250μs Pulse Test

I D, D

rain

Cur

ren

t [A

]

VGS

, Gate-Source Voltage [V]10-1 100 101

10-1

100

101

VGS

Top : 15.0 V 10.0 V

8.0 V 7.0 V 6.5 V 6.0 V

Bottom : 5.5 V

※ Notes :1. 250μs Pulse Test2. T

C = 25

I D,

Dra

in C

urr

ent

[A

]

VDS

, Drain-Source Voltage [V]

0 10 20 30 40 50 60 70 800

2

4

6

8

10

12

VDS = 450V

VDS = 180V

VDS

= 720V

※ Note : ID = 11.4 A

VG

S,

Gat

e-S

our

ce V

olta

ge

[V]

QG, Total Gate Charge [nC]

10-1 100 1010

500

1000

1500

2000

2500

3000

3500

4000

4500

5000C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds + C

gd

Crss

= Cgd

※ Notes : 1. V

GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF

]

VDS

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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25 50 75 100 125 1500

2

4

6

8

10

12I D

, D

rain

Cu

rren

t [A

]

TC, Case Temperature [ ]

100

101

102

103

10-2

10-1

100

101

102

10 μs

DC10 ms

1 ms100 μs

Operation in This Area is Limited by R

DS(on)

※ Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :1. V

GS = 10 V

2. ID = 5.7 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. V

GS = 0 V

2. ID = 250 μA

BV

DS

S, (

Nor

mal

ized

)D

rain

-Sou

rce

Bre

akdo

wn

Vol

tag

e

TJ, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

※ N o te s :1 . Z

θ J C( t) = 0 .4 2 /W M a x .

2 . D u ty F a c to r , D = t1/t

2

3 . TJ M

- TC

= PD M

* Zθ J C

( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Zθ

JC(t

), T

herm

al R

espo

nse

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

ZθJ

C(t

), T

herm

al R

espo

nse

[oC

/W]

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Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDS

RL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

IG = const.

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21

EAS = L IAS2----

21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------

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Mechanical Dimensions

Dimension in Millimeters

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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