FJAF6810_J6810(1)

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2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

F J AF 6 8 1 0

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25 C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics TC=25 C unless otherwise noted

* Pulse Test: PW=20 s, duty Cycle=1% Pulsed

Thermal Characteristics TC=25 C unless otherwise noted

Symbol Parameter Rating UnitsVCBO Collector-Base Voltage 1500 VVCEO Collector-Emitter Voltage 750 V

VEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 10 A

ICP * Collector Current (Pulse) 20 AP C Collector Dissipation 60 W

TJ Junction Temperature 150 CTSTG Storage Temperature -55 ~ 150 C

Symbol Parameter Test Conditions Min Typ Max UnitsICES Collector Cut-off Current V CB=1400V, R BE=0 1 mAICBO Collector Cut-off Current V CB=800V, I E=0 10 A

IEBO Emitter Cut-off Current V EB=4V, I C=0 1 mABVEBO Emitter-Base Breakdown Voltage I E=500 A, I C=0 6 V

hFE1hFE2

DC Current Gain V CE =5V, I C=1AVCE =5V, I C=6A

105 8

VCE (sat) Collector-Emitter Saturation Voltage I C=6A, I B=1.5A 3 VVBE (sat) Base-Emitter Saturation Voltage I C=6A, I B=1.5A 1.5 VtSTG * Storage Time V CC =200V, I C=6A, R L=33

IB1=1.2A, I B2= - 2.4A3 s

tF* Fall Time 0.2 s

Symbol Parameter Typ Max UnitsR jC Thermal Resistance, Junction to Case 2.08 C/W

FJAF6810

High Voltage Color Display HorizontalDeflection Output High Collector-Base Breakdown Voltage : BV CBO = 1500V High Switching Speed : t F(typ.) =0.1 s For Color Monitor

TO-3PF11.Base 2.Collector 3.Emitter
http://www.digchip.com/datasheets/parts/datasheet/000/FJAF6810_J6810.phphttp://www.digchip.com/

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2001 Fairchild Semiconductor Corporation

F J AF 6 8 1 0

Rev. A2, May 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

0 2 4 6 8 10 12 140

2

4

6

8

10IB=2.0A

IB=0.6A

IB=0.4A

IB=0.2A

I C [ A ] , C O L L E C T O R C U R R E N T

VCE [V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 1001

10

100

VCE = 5V

Ta = 125 0C Ta = 250C

Ta = - 25 0C

h F E , D

C C U R R E N T G A I N

IC [A], COLLECTOR CURRENT

0.1 1 100.01

0.1

1

10

100

IC = 5 I B

Ta = 1250C

Ta = 250C

Ta = - 25 0C

V C E

( s a t

) [ V ] , S A T U R A T I O N V O L T A G E


0.1 1 100.01

0.1

1

10

IC = 3 I B

Ta = 1250C

Ta = 25 0C

Ta = - 250C

V C E

( s a t

) [ V ] , S A T U R A T I O N V O L T A G E


0.0 0.2 0.4 0.6 0.8 1.0 1.20

2

4

6

8

10

12

14

VCE = 5V

- 250C25

0CTa = 125

0C


VBE [V], BASE-EMITTER VOLTAGE

1 100.01

0.1

1

10

tF

tSTG

VCC = 200V,IC = 6A, I B1 = 1.2A

t S T G

& t F [ s ] , S

W I T C H I N G T I M E

IB2 [A], REVERSE BASE CURRENT

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2001 Fairchild Semiconductor Corporation

F J AF 6 8 1 0

Rev. A2, May 2001

Typical Characteristics (Continued)

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area

Figure 11. Power Derating

1 100.01

0.1

1

10

100

tF

tSTG

VCC = 200V,IC = 6A, I B2 = - 2.4A

t S T G

& t F [ s ] , S


IB1 [A], FORWARD BASE CURRENT

1 100.1

1

10

tF

tSTG

VCC = 200V,IB1 = 1.0A, I B2 = - 2.4A

t S T G

& t F [ s ] , S



10 100 1000 10000

5

10

15

20

25

30

RB2 = 0, I B1 = 15AVCC = 30V, L = 200 H

VBE(off) = - 3V

VBE(off) = - 6V

1



1 10 100 1000 100000.01

0.1

1

10

100

TC = 25oC

Sigle Pulse

t = 100ms t = 10ms

t = 1ms

IC (Pulse)

IC (DC)



0 25 50 75 100 125 150 175 2000

10

20

30

40

50

60

70

80

P D

[ W ] , P O W E R D I S S I P A T I O N

TC [oC], CASE TEMPERATURE

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Package Demensions

2001 Fairchild Semiconductor Corporation Rev. A2, May 2001

F J AF 6 8 1 0

Dimensions in Millimeters

15.50 0.20 3.60 0.20

2 6

. 5 0

0

. 2 0

4 . 5

0

0 . 2

0

1 0

. 0 0

0

. 2 0

1 6

. 5 0

0

. 2 0

1 0

1 6

. 5 0

0

. 2 0

2 2

. 0 0

0

. 2 0

2 3

. 0 0

0

. 2 0

1 . 5

0

0 . 2

0

1 4

. 5 0

0

. 2 0

2 . 0

0

0 . 2

0

2.00 0.202.00 0.20

0.85 0.03

2.00 0.20

5.50 0.20

3.00 0.20

(1.50)

3.30 0.20

2.00 0.20

4.00 0.20

2 . 5

0

0 . 2

0

1 4

. 8 0

0 . 2

0

3 . 3

0

0 . 2

0

2 . 0

0

0 . 2

0

5 . 5

0

0 . 2

0

0.75+0.20

0.10

0.90 +0.20 0.105.45TYP

[5.45 0.30 ]5.45TYP

[5.45 0.30 ]

TO-3PF

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2001 Fairchild Semiconductor Corporation Rev. H2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c ) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or InDesign

This datasheet contains the design specifications for product development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improve

design.No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

ACExBottomlessCoolFETCROSSVOLTDenseTrenchDOMEEcoSPARKE2CMOSEnSignaFACTFACT Quiet Series

FAST

FASTrFRFETGlobalOptoisolatorGTOHiSeCISOPLANARLittleFETMicroFETMICROWIREOPTOLOGIC

OPTOPLANARPACMAN POPPowerTrench

QFETQSQT OptoelectronicsQuiet SeriesSLIENT SWITCHER

SMART STARTStealth

SuperSOT-3SuperSOT-6SuperSOT-8SyncFETTinyLogicUHCUltraFET

VCX

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FJAF6810_J6810(1)