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First Principle Design of Diluted Magnetic Semiconductor: Cu doped GaN. S.-C. Lee * , K.-R. Lee, and K.-H. Lee Computational Science Center Korea Institute of Science and Technology, KOREA. Diluted Magnetic Semiconductors. Diluted Magnetic Semiconductor (DMS) - PowerPoint PPT Presentation
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First Principle Design of Diluted
Magnetic Semiconductor: Cu doped
GaN
S.-C. Lee*, K.-R. Lee, and K.-H. Lee
Computational Science CenterKorea Institute of Science and Technology,
KOREA
Diluted Magnetic Semiconductors
Diluted Magnetic Semiconductor (DMS)- A ferromagnetic material that can be made by doping of impurities, especially transition metal elements, into a semiconductor host.
- Conducting spin polarized carriers of DMS are used for spin injection.
- Compatible with current semiconductor industry.
Spin Field Effect Transistor
Mechanisms of Ferromagnetism in DMS
TM TM TM
Long-ranged interaction of transition metals via delocalized carrier can stabilize ferromagnetic phase.
All valence electrons of the anion atoms between TM should be spin polarized.
The spin polarized carrier can deliver information
Success and Failure of Mn doped GaAs
• Mn substitutes Ga in zincblende structure– Structure is compatible with
GaAs 2DEG
• Tc is correlated with carrier density
• Ferromagnetic semiconductor with ordering temperature ~ 160 K
• Finding a new DMS material having high Tc
Ku et al., APL 82 2302 (2003)
Mn
Beyond GaMnAs
T. Dietl, Semicond. Sci. Technol. 17 (2002) 377
What will happen if other transition elements are used as dopants?
Mn doped GaN: Can it be a DMS?
Positive
Negative
• Theoretically predicted by Dietl
• High Tc was observed above room T.
• Ferromagnetic behavior by SQUID exp
eriments
• Possibility of precipitates
• XMCD or anomalous Hall Effect has not been
observed.
• Ferromagnetism can be achieved by short
ranged double exchange mechanism
Material specific or chemical effect has not been considered!
Let’s Back to the DMS Basics
TMTM
Local Moments and Splitting Valence Bands Simultaneously
Transition Element(V, Cr, Mn, Fe, Co,
Ni and Cu)
1st NN Nitrogen 4th Nitrogen
2nd NN Nitrogen 3rd NN Nitrogen
5th Nitrogen
Design Rule: Finding a TM that induces spin polarization of valence band
Start from Scratch
Calculation Methods
Planewave Pseudopotential Method: VASP.4.6.21 XC functional: GGA(PW91) Cutoff energy of Planewave: 800 eV 4X4X4 k point mesh with MP Electronic Relaxation: Davidson followed by RMM-DIIS Structure Relaxation: Conjugate Gradient Force Convergence Criterion: 0.01 eV/A Gaussian Smearing with 0.1 eV for lm-DOS Treatment of Ga 3d state
Semicore treatment for GaN Core treatment for GaAs
TM dopant: V, Cr, Mn, Fe, Co, Ni, and Cu Ferromagnetism by clustering can be excluded
Localized Moment due to MnDelocalized Carrier
due to p-d Exchange Interaction
Electronic Structure of Mn doped GaAs
Magnetic Moments of TM in GaN Host
More-than Half filledLess-Than Half filled
Spin Density of TM doped GaN
Less-Than Half filled
More-than Half filled
GaN:Cr GaN:Mn
GaN:Co GaN:Cu
GaFeN: Magnetic Insulator GaCoN: Half Metal
GaNiN: Magnetic Insulator GaCuN: Half Metal
Partial DOSs having More-than Half Filled States
Valence Band Splitting
SCL et al. JMMM (2007)SCL et al. Solid State Phenomena (2007)
Strength of p-d Hybridization
p-d hybridization results in a spin dependent coupling between the holes and the Mn ions.
pdH N s S
TM in GaN ΔEvalence (eV) Noβ (eV) Local Moment(μB)
Fe 0.4203 -3.3624 4
Co 0.2902 -3.0955 3
Ni 0.3780 -6.0480 2
Cu 0.3961 -12.6752 1
GaAs:Mn 0.3231 -2.0678 5
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.00
20
40
60
80
100
120
140
160
En
erg
y D
iffe
ren
ce (
me
V, E
AF
M-E
FM)
Distance between Cu atoms (Angstrom)
Magnetic Interaction in Larger Supercell
216-atom supercell
Co, CuCo, Cu
Cu is the most probable candidate in GaN host
Experimental Confirmation
Appl. Phys. Lett. 90, 032504 (2007). NanoLett, Accepted 2007
Ion Implantation Nanowire
Stability of Ferromagnetic Cu
Non-Magnetic Magnetic
Number of electrons in frontier level or unfilled statesPara: 0.98 for Cu, 3.2 for TotalFerro: 0.27 for Cu, 0.82 for TotalFerromagnetic alignment drastically decrease the number of electrons in frontier level
“Antibonding conjecture” Dronskowski (2006)
t2g
eg
sp3M 3d
EF
Mainly p
Mainly M d M-N Antibonding
M-N Bonding
4 antibonding d-character electrons in frontier level Energetically unfavored
Electron Configurations of Non-Magnetic Phase
Electron Configurations of Magnetic Phase
t2g
eg
Only 1 electron in frontier levelEnergetically favored
Spin polarized configuration can decrease the number of antibonding electrons
sp3
M 3d
EF
up down
Non-Magnetic Magnetic
Spin-downExpandedLarge HybridizationLong-ranged
Spin-upContracted
Small HybridizationShort-ranged
And More …
Magnetic Moments of TM in GaN Host
More-than Half filledLess-Than Half filled
Why Cu is good Mn is bad?
7.3 7.54 6.27
5.62 6.22
5.3 5.89
Absolute Electronegativity
Why Cu is Good and Mn is Bad in GaN?
2p3d
σg
σu*
TMN
Cu doped GaN Mn doped GaN
2p
3d
TMN
Cu Mn
Electronegativity difference Small Large
d-character in antibonding state
Weaker Stronger
Carrier in antibonding state Delocalized Localized
Summary
Cu Cu
Cu is a probable candidate. Electronegativity can help to design a novel DMS material
Quantitative analysis is also needed.
Formation Energies of Cu in GaN Host
Formation Energy of Cu
CuGa 0.00
CuN 2.56
CuI 5.42
Cu(in fcc metal)+Ga32N32 Ga(in orthorhombic)+ Ga31Cu1N32
Cu(in fcc metal)+Ga32N32 1/2N2(in N2 molecule)+Ga32N31Cu1
Cu(in fcc metal)+Ga32N32 Ga32N32Cu1
Local Moments of Cu
Cu Cu
• Total Magnetic Moment: 2.0 μB
• Cu Projected Moment: 0.65 μB
• Charge State: Cu+2
• Possible for Hole Doping: 3d9+h
Roles of Transition Metal Impurities
Local Magnetic Moment
TM TM
Split Valence Band
Spin Polarized Carrier!!