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UNECS series

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UNECS seriesCompact, High-Speed Spectroscopic Ellipsometer

ULVAC Technologies, Inc.

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History of History of ULVAC EllipsometersULVAC Ellipsometers

ULVAC released the single wavelength ellipsometer ESM series productsabout 30 years ago.

Until now, hundreds of ESM series products have been installed for ourcustomers for the industrial and R&D purposes all over the world.

Several years ago, we developed the UNECS series spectroscopicellipsometers and released them in 2011.

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ESM-1A(Φ150mm)

UNECS-3000A（Φ300mm）

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UNECS-1500A/2000A

UNECS Family

UNECS-Portable

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UNECS-1500M UNECS-3000A

Key features are as follows;- High speed measurement (20msec)- User friendly operation and software- Easy maintenance.

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ULVAC can offer Optical components (light source, Spectrometer) and software for OEM application.

UNECS Family

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UNECS-1M

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Phase modulation typeElement rotation typeConventional Methods used by Competitors

High-Speed Measurement and compact

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Polarization control by electrical signals on the optical element

Polarization control by rotating optical elements

The configuration of sensor is complicated and large.Measurement time is SLOW because adjustments is needed by temporal

transition.

These methods make it difficult to reduce size and measurement time

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ConfidentialHigh-Speed Measurement

High-Speed MeasurementSnapshot method of measurement using high order retarders makes high-speed (min.20ms) measurement possible.

Snapshot with “fixed” module is like cameraThis configuration results in a compact design

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2015/4/8AnalyzerRetarder2

Sample

SpectrometerHalogen lamp

Light polarizer Retarder1

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High Speed MeasurementHigh order retarders are utilized to generate the spectrum carrying information about the wavelength-dependant parameters of polarized light. It requires no mechanical or active components for polarization control such as a rotating compensator or electro optic modulator. Data acquisition time is 20 ms per measurement of the range of wavelength .

Compact Design

Features of Features of UNECSUNECS

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Compact DesignThe size of sensor unit is very small due to the use of high order wavelength plates. The built in light source and controller are mounted into a well designed compact enclosure.

Excellent Cost PerformanceThe only maintenance required is replacing the light source.

ConfidentialFeatures of UNECSFeatures of UNECSCustomized Material Table Files

Users can easily edit and add material table files for their own applications. Special material files can be created based on standard film models to measure special films.

Multi-layer MeasurementIt is possible to measure a multi-layer film thicknesses of up to 6 layers.

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It is possible to measure a multi-layer film thicknesses of up to 6 layers.

Auto-Mapping function availableAutomatic model have Mapping function.

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(1) OLED:Alq3／glass substrate single layer filmGlassAlq3

Sample A B C D Measuring Instrument

R.I. Thickness R.I. Thickness R.I. Thickness R.I. ThicknessN D(nm) N D(nm) N D(nm) N D(nm)

UNECS 1.712 118.5 1.728 115.8 1.731 115.0 1.729 112.1

Data example（OLED, PV）UNECS data shows similar data as the Stylus method profiler .

Reliability data

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(2) Thin film PV：SiO2(Silica)/μc-Si/ glass substrate 2 layers filmsGlassμc-SiSiO2

Sample A B C Measuring Instrument μc-Si SiO2 μc-Si

＋SiO2 μc-Si SiO2 μc-Si ＋SiO2 μc-Si SiO2 μc-Si

＋SiO2

UNECS 509.9 18.2 528.1 523.2 13.8 537.0 518.8 21.7 540.4Stylus

Profiler - - 525.4 - - 541.4 - - 546.3

UNECS 1.712 118.5 1.728 115.8 1.731 115.0 1.729 112.1Stylus Profiler － 118.4 － 111.8 － 116.1 － 109.3

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Measured value*1)

Repeatability σ

SiO2 thickness 1.96 nm 0.03 nm

Measured value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

50.95 nm 0.05 nm

Resists refractive index

1.576 0.02

Si substrate

SiO2(1) SiO2 single-layer filmSi substrate

Resists(2) Resists single layer film(thickness and refractive index is measured at the same time)

GOOD REPEATABILITY

Reliability data Example (SiO2, Resists)

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index

Measured value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

48.17 nm 0.72 nm

ＢＡＲＣ thickness(Designed value 65nm)

67.16 nm 0.76 nm

Measured value*1)

Repeatability σ

Top coating thickness(designed value 30nm)

28.79 nm 0.05 nm

Top coating refractive index 1.342 0.001

Remarks: Repeatability is the standard deviation of 10 times consecutive measurements (1σ).

Si substrate

ＢＡＲＣ

Resists(3) Resists/ BARC 2 layer film

Si substrate

ＢＡＲＣ

Resists

Top coating(4) Resists 3 layer film(Thickness and refractive index is measured at the same time）

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Measurement Data(ITO Film)

ITO single-layer filmSi substrate

ITO

FilmFilm Thickness [nm] Refractive index

Ave. Std. deviation Ave. Std. deviation

ITO 33.30 0.0219 2.015 0.002

Remarks: Data from 30 times continuous measurement

Target film thickness: 30nm

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828486889092949698100102

0

5

10

15

20

25

530 580 630 680 730

ΔΨ

Wave length [nm]

Exp_PsiFit_PsiExp_DeltaFit_Delta

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SiN SiO a-Si【1】 22.9 243.8 49.1【2】 21.1 243.8 49.2【3】 21.9 242.9 49.2【4】 22.5 243.3 49.2【5】 22.3 242.2 49.2【6】 22.4 244.1 49.2【7】 22.8 243.7 49.1

Film Thick[nm]Third Layer

a-Si 48

SecondLayer

SiO2 200

Measured Layer

3-Layer FPD FilmsMeasurement

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【7】 22.8 243.7 49.1【8】 22.6 244.3 49.2【9】 21.8 242.9 49.2【10】 22.7 244.2 49.2

Average 22.3 243.5 49.2Std.Dev. 0.55 0.66 0.03

FirstLayer

Si3N4 20

Glass BK7 0.7mm

Wavelength Range ： 530～750[nm]Spot Size ： φ1.0[mm]Angle of Incidence ： 70.00[°]Sampling Time ： 20[ms]Measured 10 times at the same location

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Measurement Data (Comparison between ULVAC and others)

Comparison of 8 kinds of TiO2 film with different deposition condition.

Sample A B C D E F G H

UNECS 145.8nm 148.0nm 149.0nm 172.1nm 567.9nm 1155.9nm 1729.9nm 179.3nm

J.A. Woollam 145.1nm 147.5nm 147.9nm 171.1nm 569.4nm 1157.4nm 1728.0nm 180.9nm

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Woollam

Difference 0.5% 0.3% 0.7% 0.6% -0.3% -0.1% 0.1% -0.9%

Correlation is less than 1% for all sample A~H.

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You can see film thickness distribution with 2D color map.X-Y mode R-θ mode

Auto-Mapping function

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Ex. In the case of 106 points SiO2 film on Φ300mm Si substrate measurement by R-θ mode. 120sec (incl. moving time) 1/5 the competitor model

Hi speed measurement and auto-mapping function reduces test time

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■HfO2 (Ultra Thin Film)

Materials

Top Layer HfO2

Mid-Layer SiO2

Substrate Si Wafer

【Model】

【Results】

Measurement Results for ALD Thin Film

Sample Thickness _Max（nm） Thickness _Min（nm） Th ic kness_Ave rage (ｎｍ） Uniformity（％） Th ic kness@Cen te r（ｎｍ）

2nm HfO2/Native SiO2/Si 2.56 2.37 2.45 3.9% 2.46

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The correlation between the thickness measurement results of UNECS and these of TEM are perfect.

HfO2 5nm Thickness Color Map（44Points） TEM Measurement Results

2.5nm

6.0nm

2nm HfO2/Native SiO2/Si 2.56 2.37 2.45 3.9% 2.46

5nm HfO2/Native SiO2/Si 6.12 5.63 5.83 4.2% 5.85

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1.63nm 2.07nm

EUV Application Data

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UNECS-3000A

M-2000

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Measurement Results by the Φ50 Micron Micro-beam

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UNECS Φ50μm Micro-spot for MEMS Application

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【Sample】 Line Width 100µm X 5 【Measurement Area】 1mm×１mm Square Area【Measurement Points】 10,000

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Industry Measurement Object

Semiconductor

High-k（SiO2, Si3N4, SiNx, SiON, HfO2, Ta2O5...）Low-k（SiOC, SiOF...）Lithographic（AR, BARC, SiOxNy, Resists, Mask...）Semiconductor epitaxial（Poly-Si, a-Si, SOI, SiGe, OPO, SiC, GaN...）Ultrathin metal film（AL, Cu, Cr, No, W, Pt, TiN, TaN, AｌCu...）

TFT ITO, SiNx, a-Si, Resists, SiOx, Polymide...

Applications

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Display

TFT（ITO, SiNx, a-Si, Resists, SiOx, Polymide...）CF（RGB, Polymide, ITO, CrO2...）OLED（AｌＱ3, CuPc, Organic Layers...）PDP（Mgo, ITO, AL2O3...）

Solar cells Thin-film（TCO, a-Si, μc-Si）, CIGS

OpticsHi/Lo Stacks, Antireflection coating, Protective film, Decorative coating

Storage AL2O3, Ta2O5, DLC, MO materials, AlN

Communication SiOx, Al2O3, Ta2O5, TiO2

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■■ Standard system configurationUNECS bodyController (only UNECS-3000A)PC and data analysis software

■■OptionCalibration standard（100nm, SiO2 / Si）

USB connection×2

Easy Set Up

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Connect UNECS to PC with USB cable.

←UNECS-3000A

UNECS-1500M→

USB connection×2

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ConfidentialManual Stage

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ConfidentialModule type

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