Electronics and Communication Engg_Full Paper_2003

8/3/2019 Electronics and Communication Engg_Full Paper_2003

1/23

Electronics and Communication Engg - 2003

Full Paper

1. The minimum number of equations required to analyze the circuit shown in the figure is

1) 3 2) 4 3) 6 4) 7

2. A source of angular frequency 1 rad/sec has a source impedance consisting of 1resistance in series with 1 H inductance. The load that will obtain the maximum powertransfer is

1) 1 resistance

2) 1 resistance in parallel with 1 H inductance

3) 1 resistance in series with 1 F capacitor

4) 1

resistance in parallel with 1 F capacitor

3. A series RLC circuit has a resonance frequency of 1 kHz and a quality factor Q = 100. Ifeach R, L and C is doubled from its original value, the new Q of the circuit is

1) 25 2) 50 3) 100 4) 200

4. The Laplace transform of i(t) is given byI (s) = 2/(s(1 + s))As t , the value of i(t) tends to

1) 0 2) 1 3) 2 4)

5. The differential equation for the current i(t) in the circuit of Figure is

1) 2(d2i/dt2) + 2(di/dt) + i(t) = sin t

2) (d2i/dt2) + 2(di/dt) + 2i(t) = cos t

3) 2(d2i/dt2) + 2(di/dt) + i(t) = cos t

1/22 gate.edooni.com


2/23

4) (d2i/dt2) + 2(di/dt) + 2i(t) = sin t

6. n-type silicon is obtained by doping silicon with

1) Germanium

2) Aluminum

3) Boron4) Phosphorus

7. The bandgap of silicon at 300 K is

1) 1.36 eV

2) 1.10 eV

3) 0.80 eV

4) 0.67 eV

8. The intrinsic carrier concentration of silicon sample of 300 K is 1.5 x 10 16/m3. If after

doping, the number of majority carriers is 5 x 1020/m3, the minority carrier density is

1) 4.50 x 1011/m3

2) 3.33 x 104/m3

3) 5.00 x 1020/m3

4) 3.00 x 10-5/m3

9. Choose proper substitutes for X and Y to make the following statement correct

Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.1) X : reverse, Y : reverse

2) X : reverse, Y : forward

3) X : forward, Y : reverse

4) X : forward, Y : forward

10. For an n-channel enhancement type MOSFET, if the source is connected at a higherpotential than that of the bulk (i.e. VSB > 0), the threshold voltage VT of the MOSFET will

1) remain unchanged

2) decrease

3) change polarity

4) increase

11. Choose the correct match for input resistance of various amplifier configurations shownbelow.

Configuration Input resistance

CB: Common Base LO: LowCC: Common Collector MO: Moderate

CE: Common Emitter HI: High



3/23

1) CB-LO, CC-MO, CE-HI

2) CB-LO, CC-HI, CE-MO

3) CB-MO, CC-HI, CE-LO

4) CB-HI, CC-LO, CE-MO

12. The circuit shown in figure is best described as a

1) bridge rectifier

2) ring modulator

3) frequency discriminatory

4) voltage doubler

13. If the input to the ideal comparator shown in figure is a sinusoidal signal of 8V (peak topeak) without any DC component, then the output of the comparator has a duty cycle of

1) 1/2 2) 1/3 3) 1/6 4) 1/12

14. If the differential voltage gain and the common mode voltage gain of a differential amplifierare 48 dB and 2 dB respectively, then its common mode rejection ratio is

1) 23 dB

2) 25 dB

3) 46 dB

4) 50 dB

15. Generally, the gain of a transistor amplifier falls at high frequencies due to the

1) internal capacitances of the device

2) coupling capacitor at the input

3) skin effect

4) coupling capacitor at the output

16. The number of distinct Boolean expression of 4 variables is

1) 16 2) 256 3) 1024 4) 65536

17. The minimum number of comparators required to build an 8 bit flash ADC is



4/23

1) 8 2) 63 3) 255 4) 256

18. The output of the 74 series of TTL gates is taken from a BJT in

1) totem pole and common collector configuration

2) either totem pole or open collector configuration

3) common base configuration4) common collector configuration

19. Without any additional circuitry, an 8 : 1 MUX can be used to obtain

1) some but not all Boolean functions of 3 variables

2) all function of 3 variables but none of 4 variables

3) all functions of 3 variables and some but not all of 4 variables

4) all functions of 4 variables

20. A 0 to 6 counter consists of 3 flip flops and a combination circuit of 2 input gate(s). Thecombination circuit consists of

1) one AND gate

2) one OR gate

3) one AND gate and one OR gate

4) two AND gates

21. The Fourier series expansion of a real periodic signal with fundamental frequency f0 is

given by

gp(t) =

It is given that c3 = 3 + j5. Thenc-3 is

1) 5 + j3

2) - 3 - j5

3) - 5 + j3

4) 3 - j5

22. Let x(t) be the input to a linear, time-invariant system. The required output is 4x (t - 2). Thetransfer function of the system should be

1) 4 ej4f

2) 2 e-j8f

3) 4 e-j4f

4) 2 ej8f

23. A sequence x(n) with the z-transform X(z) = z4 + z2 - 2z + 2 - 3z - 4 is applied as an inputto a linear, time-invariant system with the impulse response h(n) = 2(n - 3) where

(n) =



5/23

The output at n = 4 is

1) -6 2) zero 3) 2 4) -4

24. The figure shows the Nyquist plot of the open-loop transfer function G(s)H(s) of a system.If G(s)H(s) has one right-hand pole, the closed-loop system is

1) always stable

2) unstable with one closed loop right hand pole

3) unstable with two closed loop right hand poles

4) unstable with three closed loop right hand poles

25. A PD controller is used to compensate a system. Compared to the uncompensatedsystem, the compensated system has

1) a higher type number

2) reduced damping

3) higher noise amplification

4) larger transient overshoot

26. The input to a coherent detector is DSB-SC signal plus noise. The noise at the detectoroutput is

1) the in-phase component

2) the quadrature-component

3) zero

4) the envelope

27. The noise at the input to an ideal frequency detector is white. The detector is operatingabove threshold. The power spectral density of the noise at the output is

1) raised cosine

2) flat

3) parabolic

4) Gaussian

28. At a given probability of error, binary coherent FSK is inferior to binary coherent PSK by1) 6 dB 2) 3 dB 3) 2 dB 4) 0 dB



6/23

29. The unit of x H is

1) Ampere

2) Ampere/meter

3) Ampere/meter2

4) Ampere-meter

30. The depth of penetration of electromagnetic wave in a medium having conductivity at afrequency of 1 MHz is 25 cm. The depth of penetration at a frequency of 4 MHz will be

1) 6.25 cm

2) 12.50 cm

3) 50.00 cm

4) 100.00 cm

31. Twelve 1 resistances are used as edges to form a cube. The resistance between twodiagonally opposite corners of the cube is

1) (5/6)

2) 1

3) (6/5)

4) (3/2)

32. The current flowing through the resistance R in the circuit in figure has the form P cos 4t,where P is

1) (0.18 + j 0.72)

2) (0.46 + j 1.90)

3) -(0.18 + j 1.90)

4) -(0.192 + j 0.144)

The circuit for next two Questions, are given in the figure. For both are the question,assume that the switch S is in position 1 for a long time and thrown to position 2 at t = 0.

33. At t = 0 +, the current i1 is



7/23

1) (-V/2R)

2) (-V/R)

3) (-V/4R)

4) zero

34. I1(s) and I2(s) are the Laplace transforms of i1(t) and i2(t) respectively. The equations forthe loop currents I1(s) and I2(s) for the circuit shown in the figure after the switch is

brought from position 1 to position 2 at t = 0, are

1)

2)

3)

4)

35. An input voltage (t) = 102 cos (t + 10) + 103 cos (2t + 10) V is applied to a seriescombination of resistance R = 1 and an inductance L = 1H. The resulting steady-statecurrent i(t) in ampere is

1) 10 cos (t + 55) + 10 cos (2t + 10 + tan-1 2)

2) 10 cos (t + 55) + 10(3/2) cos (2t + 55)3) 10 cos (t - 35) + 10 cos (2t + 10 - tan -1 2)

4) 10 cos (t - 35) + 10(3/2) cos (2t - 35)

36. The driving-point impedance Z(s) of a network has the pole-zero locations as shown infigure. If Z(0) = 3, then Z(s) is

1) (3(s + 3))/(s2 + 2s + 3)

2) (2(s + 3))/(s2 + 2s + 2)

3) (3(s - 3))/(s2 - 2s - 2)



8/23

4) (2(s - 3))/(s2 - 2s - 3)

37. The impedance parameters Z11 and Z12 of the two-port network in the figure are

1) Z11 = 2.75 and Z12 = 0.25

2) Z11 = 3 and Z12 = 0.5

3) Z11 = 3 and Z12 = 0.25

4) Z11 = 2.25 and Z12 = 0.5

38. An n-type silicon bar 0.1 cm long and 100m2

in cross-sectional area has a majoritycarrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m0/V-s at 300K. If the

charge of an electron is 1.6 x 10-19 coulomb, then the resistance of the bar is

1) 106 ohm

2) 104 ohm

3) 10-1 ohm

4) 10-4 ohm

39. The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies

linearly from 1017/cm3 at x = 0 to 6 x 1016/cm3 at x = 2m. Assume a situation thatelectrons are supplied to keep this concentration gradient constant with time. If electronic

charge is 1.6 x 10-19 coulomb and the diffusion constant Dn = 35 cm2 /s, the current

density in the silicon, if no electric field is present, is

1) zero

2) - 1120 A/cm2

3) +1120 A/cm2

4) - 1130 A/cm2

40. Match items in Group 1 with items in Group 2, most suitably.Group 1 Group 2

P LED 1 Heavy dopingQ Avalanche photodiode 2 Coherent radiationR Tunnel diode 3 Spontaneous emissionS LASER 4 Current gain

1) P-1, Q-2, R-4, S-3

2) P-2, Q-3, R-1, S-43) P-3, Q-4, R-1, S-2



9/23

4) P-2, Q-1, R-4, S-3

41. At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward biasof 0.1435 V, whereas a certain silicon diode requires a forward bias of 0.178 V. Under theconditions stated above, the closest approximation of the ratio of reverse saturationcurrent in germanium diode to that in silicon diode is

1) 1

2) 5

3) 4 x 103

4) 8 x 103

42. A particular green LED emits light of wavelength 5490 . The energy bandgap of the

semiconductor material used there is (Planck's constant = 6.626 x 10-34 J-s)

1) 2.26 eV

2) 1.98 eV3) 1.17 eV

4) 0.74 eV

43. When the gate-to-source voltage(VGS) of a MOSFET with threshold voltage of 400 mV,

working in saturation is 900 mV, the drain current in observed to be 1 mA. Neglecting thechannel width modulation effect and assuming that the MOSFET is operating at saturation,the drain current for an applied VGS of 1400 mV is

1) 0.5 mA

2) 2.0 mA3) 3.5 mA

4) 4.0 mA

44. If P is Passivation, Q is n-well implant, R is metallization and S is source/drain diffusion,then the order in which they are carried out in a standard n-well CMOS fabricationprocess, is

1) P-Q-R-S

2) Q-S-R-P

3) R-P-S-Q4) S-R-Q-P

45. An amplifier without feedback has a voltage gain of 50, input resistance of 1 K andoutput resistance of 2.5 K. The input resistance of the current-shunt negative feedbackamplifier using the above amplifier with a feedback factor of 0.2 is

1) 1/11 K

2) 1/5 K

3) 5 K

4) 11 K



10/23

46. In the amplifier circuit shown in the figure is the values of R1 and R2 are such that the

transistor is operating at VCE = 3 V and IC = 1.5 mA when its is 150. For a transistor with

of 200, the operating point (VCE, IC) is

1) (2 V, 2 mA)

2) (3 V, 2 mA)

3) (4 V, 2 mA)

4) (4 V, 1 mA)

47. The oscillator circuit shown in the figure is has an ideal inverting amplifier. Its frequency of

oscillation (in Hz) is

1) 1/(2(6) RC)2) 1/(2 RC)

3) 1/((6) RC)

4) 1/((6)(2 RC))

48. The output voltage of the regulated power supply shown in the figure is

1) 3 V

2) 6 V

3) 9 V4) 12 V



11/23

49. The action of a JFET in its equivalent circuit can bast be represented as a

1) Current Controlled Current Source

2) Current Controlled Voltage Source

3) Voltage Controlled Voltage Source

4) Voltage Controlled Current Source

50. If the op-amp in the figure is idea, the output voltage Vout will be equal to

1) 1 V

2) 6 V

3) 14 V

4) 17 V

51. Three identical amplifiers with each one having a voltage gain of 50, input resistance of 1K and output resistance of 250, are cascaded. The open circuit voltage gain of thecombined amplifier is

1) 49 dB

2) 51 dB

3) 98 dB

4) 102 dB

52. An ideal sawtooth voltage waveform of frequency 500 Hz and amplitude 3V is generatedby charging a capacitor of 2 F in every cycle. The charging requires

1) constant voltage source of 3 V for 1 ms

2) constant voltage source of 3 V for 2 ms

3) constant current source of 3 mA for 1 ms

4) constant current source of 3 mA for 2 ms

53. The circuit shown in the figure has 4 boxes each described by inputs P, Q, R and outputsY, Z withY = P Q R

Z = RQ + R + Q



12/23

The circuit acts as a

1) 4 bit adder giving P + Q

2) 4 bit subtractor giving P - Q

3) 4 bit subtractor giving Q - P

4) 4 bit adder giving P + Q + R

54. If the functions W, X, Y and Z are as followsW = R + Q + S

X = PQ + + P

Y = RS +

Z = R + S +

Then

1) W = Z, X =

2) W = Z, X = Y

3) W = Y

4) W = T =

55. A 4 bit ripple counter and a 4 bit synchronous counter are made using flip flops having apropagation delay of 10 ns each. If the worst case delay in the ripple counter and thesynchronous counter be R and S respectively, then

1) R = 10 ns, S = 40 ns

2) R = 40 ns, S = 10 ns

3) R = 10 ns, S = 30 ns

4) R = 30 ns, S = 10 ns

56. The DTL, TTL, ECL and CMOS families of digital ICs are compared in the following 4

columns(P) (Q) (R) (S)

Fanout is minimum DTL DTL TTL CMOSPower consumption is minimum TTL COMS ECL DTLPropagation delay is minimum COMS ECL TTL TTL

The correct column is

1) P 2) Q 3) R 4) S

57. The circuit shown in the figure is a 4 bit DAC



13/23

The input bits 0 and 1 are represented by 0 and 5 V respectively. The OP AMP is ideal,but all the resistances and the 5V inputs have a tolerance of 10%. The specification(rounded to the nearest multiple of 5%) for the tolerance of the DAC is

1) 35%

2) 20%

3) 10%4) 5%

58. The circuit shown in the figure converts

1) BCD to binary code

2) Binary to excess - 3 code

3) Excess - 3 to Gray code

4) Gray to Binary code

59. In the circuit shown in the Figure A is a parallel-in, parallel-out 4 bit register, which loads at

the rising edge of the clock C. The input lines are connected to a 4 bit bus, W. Its outputacts as the input to a 16 x 4 ROM whose output is floating when the enable input E is 0. Apartial table of the contents of the ROM is as follows

Address 0 2 4 6 8 10 11 14

Date 0011 1111 0100 1010 1011 1000 0010 1000



14/23

The clock to the register is shown, and the data on the W bus at time t1 is 0110. The data

on the bus at time t2 is

1) 1111 2) 1011 3) 1000 4) 0010

60. In an 8085 microprocessor, the instruction CMP B has been executed while the content ofthe accumulator is less than that of register B. As a result

1) Carry flag will be set but Zero flag will be reset

2) Carry flag will be reset but Zero flag will be set

3) Both Carry flag and Zero flag will be reset

4) Both Carry flag and Zero flag will be set

61. Let X and Y be two statistically independent random variables uniformly distributed in theranges (-1, 1) and (-2, 1) respectively. Let Z = X + Y. Then the probability that [Z - 2] is

1) zero 2) 1/6 3) 1/3 4) 1/12

62. Let P be linearity, Q be time-invariance, R be causality and S be stability. A discrete-timesystem has the input-output relationship,

where x(n) is the input and y(n) is the output. The above system has the properties

1) P, S but not Q, R

2) P, Q, S but not R

3) P, Q, R, S4) Q, R, S but not P



15/23

The system under consideration is an RC low-pass filter (RC-LPF) with R = 1.0 k and C =1.0F.

63. Let H(f) denote the frequency response of the RC-LPF. Let f1 be the highest frequency

such that

0 | f | f1, ((|H(f1)|)/H(0)) 0.95. Then f1 (in Hz) is1) 327.8

2) 163.9

3) 52.2

4) 104.4

64. Let tg(f) be the group delay function of the given RC-LPF and f2 = 100 Hz. Then tg(f2) in

ms, is

1) 0.717

2) 7.173) 71.7

4) 4.505

65. Let X be the Gaussian random variable obtained by sampling the process at t = ti and let

The probability that [x 1] is1) 1 - Q(0.5)

2) Q(0.5)

3) Q(1/(22))

4) 1 - Q(1/(22))

66. Let Y and Z be the random variables obtained by sampling X(t) at t = 2 and t = 4respectively. Let W = Y - Z. The variance of W is

1) 13.36

2) 9.363) 2.64

4) 8.00

67. Let x(t) = 2 cos (800t) + cos (1400t). x(t) is sampled with the rectangular pulse trainshown in the figure. The only spectral components (in kHz) present in the sampled signalin the frequency range 2.5 kHz to 3.5 kHz are



16/23

1) 2.7, 3.4

2) 3.3, 3.6

3) 2.6, 2.7, 3.3, 3.4, 3.6

4) 2.7, 3.3

68. The signal flow graph of a system is shown in the figure. The transfer function (C(s)/R(s))of the system is

1) 6/(s2 + 29s + 6)2) 6s/(s2 + 29s + 6)

3) (s(s + 2))/(s2 + 29s + 6)

4) (s(s + 27))/(s2 + 29s + 6)

69. The root locus of the system G(s) H(s) = K/(s(s + 2)(s + 3)) has the break-away pointlocated at

1) (-0.5, 0)

2) (-2.548, 0)

3) (-4, 0)

4) (-0.784, 0)

70. The approximate Bode magnitude plot of a minimum-phase system is shown in the figure.The transfer function of the system is



17/23

1)

2)

3)

4)

71. A second-order system has the transfer function (C(s)/R(s)) = 4/(s2 + 4s + 4)With r(t) as the unit-step function, the response c(t) of the system is represented by

1)

2)



18/23

3)

4)

72. The gain margin and the phase margin of a feedback system with G(s)H(s) = s/(s + 100)3

are

1) 0 dB, 0

2) ,

3) , 0

4) 88.5 dB,

73. The zero-input response of a system given by the state-space equation

is

1)

2)

3)

4)

74. A DSB-SC signal is to be generated with a carrier frequency fe = 1MHz using a non-linear

device with the input-output characteristic 0 = a0i + a1i3

where a0 and a1 are constants. The output of the non-linear device can be filtered by an

appropriate band-pass filter.

Let i = Ate cos (2 f et t) + m(t) where m(t) is the message signal. Then the value fet (in

MHz) is

1) 1.0 2) 0.333 3) 0.5 4) 3.0



19/23

Let m(t) = cos [(4 x 103)t] be the message signal and c(t) = 5 cos[2 x 106)t] be the

carrier

75. c(t) and m(t) are used to generate an AM signal. The modulation index of the generatedAM signal is 0.5. Then the quantity (Total sideband power)/(Carrier power) is

1) 1/2 2) 1/4 3) 1/3 4) 1/8

76. c(t) and m(t) are used to generate an FM signal. If the peak frequency deviation of thegenerated FM signal is three times the transmission bandwidth of the AM singal, then the

coefficient of the term cos [2 (1008 x 10 3 t)]in the FM signal (in terms of the Besselcoefficients) is

1) 5 J4(3)

2) (5/2) J8(3)

3) (5/2) J8(4)

4) 5 J4(6)

77. Choose the correct one from among the alternative A, B, C, D after matching an item inGroup 1 with the most appropriate item in Group 2.

Group 1 Group 2

P Ring modulator 1 Clock recoveryQ VCO 2 Demodulation of FM

RFoster-Seely

discriminator3 Frequency conversion

S Mixer 4 Summing the two inputs5 Generation of FM6 Generation of DSB-Sc

1) P-1 Q-3 R-2 S-4

2) P-6 Q-5 R-2 S-3

3) P-6 Q-1 R-3 S-2

4) P-5 Q-6 R-1 S-3

78. A superheterodyne receiver is to operate in the frequency range 550 kHz - 1650 kHz, withthe intermediate frequency of 450 kHz. Let R = (Cmax)/(Cmin) denote the required

capacitance ratio of the local oscillator and I denote the image frequency (in kHz) of theincoming signal. If the receiver is tuned to 700 kHz, then

1) R = 4.41, I = 1600

2) R = 2.10, I = 1150

3) R = 3.0, I = 1600

4) R = 9.0, I = 1150

79. A sinusoidal signal with peak-to-peak amplitude of 1.536 V is quantized into 128 levels

using a mid-rise uniform quantizer. The quantization-noise power is



20/23

1) 0.768 V

2) 48 x 10-6 V2

3) 12 x 10-6 V2

4) 3.072 V

80. If Eb, the energy per bit of a binary digital signal, is 10-6 watt-sec and the one-sided power

spectral density of the white noise, N0 = 10-5 W/Hz, then the output SNR of the matched

filter is

1) 26 dB

2) 10 dB

3) 20 dB

4) 13 dB

81. The input to a linear delta modulator having a step-size = 0.628 is a sine wave withfrequency fm and peak amplitude Em. 1f the sampling frequency fs = 40 kHz, the

combination of the sine-wave frequency and the peak amplitude, where slope overload willtake place is

1) Em 0.3 V, fm 8 kHz

2) Em 1.5 V, fm 4 kHz

3) Em 1.5 V, fm 2 kHz

4) Em 3.0 V, fm 1 kHz

82. If S represents the carrier synchronization at the receiver and represents the bandwidthefficiency, then the correct statement for the coherent binary PSK is

1) = 0.5, S is required

2) = 1.0, S is required

3) = 0.5, S is not required

4) = 1.0, S is not required

83. A signal is sampled at 8 kHz and is quantized using 8-bit uniform quantizer. AssumingSNRq for a sinusoidal signal, the correct statement for PCM signal with a bit rate of R is

1) R = 32 kbps, SNRq = 25.8 dB2) R = 64 kbps, SNRq = 49.8 dB

3) R = 64 kbps, SNRq = 55.8 dB

4) R = 32 kbps, SNRq = 49.8 dB

84. Medium 1 has the electrical permittivity 1 = 1.50 farad/m and occupies the region to the

left of x = 0 plane. Medium 2 has the electrical permittivity 2 = 2.5 0 farad/m and

occupies the region to the right of x = 0 plane. If E1 in medium 1 is E1 = (2ux - 3uy + 1uz)

volt/m, then E2 in medium 2 is1) (2.0ux - 7.5uy + 2.5uz) volt/m



21/23

2) (2.0ux - 2.0uy + 0.6uz) volt/m

3) (1.2ux - 3.0uy + 1.0uz) volt/m

4) (1.2ux - 2.0uy + 0.6uz) volt/m

85. If the electric field intensity is given by

E = (xux + yuy + zuz) volt/m,the potential difference between X (2, 0, 0) and Y (1, 2, 3) is

1) +1 volt

2) -1 volt

3) +5 volt

4) +6 volt

86. A uniform plane wave traveling in air is incident on the plane boundary between air andanother dielectric medium with r = 4. The reflection coefficient for the normal incidence, is

1) zero

2) 0.5 180

3) 0.333 0

4) 0.333 180

87. If the electric field intensity associated with a uniform plane electromagnetic wavetravelling in a perfect dielectric medium is give by

E (z, t) = 10 cos (2 x 107 t = 0.1 z) volt/m, then the velocity of the travelling wave is

1) 3.00 x 108 m/sec2) 2.00 x 108 m/sec

3) 6.28 x 107 m/sec

4) 2.00 x 107 m/sec

88. A short-circuited stub is shunt connected to a transmission line as shown in the figure is. IfZ0 = 50 ohm, the admittance Y seen at the junction of the stub and the transmission line is

1) (0.01 - j0.02) mho

2) (0.02 - j0.01) mho



22/23

3) (0.04 - j0.02) mho

4) (0.02 + j0) mho

89. A rectangular metal wave guide filled with a dielectric material of relative permittivity r = 4

has the inside dimensions 3.0 cm x 1.2 cm. The cut-off frequency for the dominant mode

is1) 2.5 GHz

2) 5.0 GHz

3) 10.0 GHz

4) 12.5 GHz

90. Two identical antennas are placed in the = ( /2) plane as shown in the figure. Theelements have equal amplitude excitation with 180 polarity difference, operating atwavelength . The correct value of the magnitude of the far-zone resultant electric fieldstrength normalized with that of a single element, both computed for = 0, is

1) 2 cos (2s/)2) 2 sin (2s/)

3) 2 cos (s/)

4) 2 sin (s/)



23/23

Answer Key

1) 2 2) 3 3) 2 4) 3 5) 3 6) 4 7) 2 8) 1 9) 3 10) 1

11) 2 12) 4 13) 2 14) 3 15) 1 16) 4 17) 3 18) 2 19) 2 20) 4

21) 4 22) 3 23) 2 24) 1 25) 3 26) 1 27) 4 28) 2 29) 3 30) 2

31) 1 32) 3 33) 4 34) 4 35) 3 36) 2 37) 1 38) 3 39) 3 40) 3

41) 3 42) 1 43) 4 44) 2 45) 1 46) 1 47) 1 48) 3 49) 4 50) 2

51) 4 52) 4 53) 2 54) 1 55) 2 56) 3 57) 1 58) 4 59) 3 60) 1

61) 1 62) 1 63) 3 64) 2 65) 1 66) 3 67) 1 68) 1 69) 4 70) 1

71) 2 72) 4 73) 3 74) 1 75) 4 76) 4 77) 2 78) 1 79) 3 80) 4

81) 2 82) 4 83) 2 84) 3 85) 3 86) 4 87) 2 88) 1 89) 2 90) 4

1/1 gate.edooni.com

Documents

Electronics and Communication Engg_Full Paper_2003