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ECE 474:Principles of Electronic Devices
Prof. Virginia AyresElectrical & Computer EngineeringMichigan State [email protected]
V.M. Ayres, ECE474, Spring 2011
Lecture 01:
Intro to Course
Start:Physical structures of crystal systems that are important for devices
V.M. Ayres, ECE474, Spring 2011
Lecture 01:
Intro to Course
Start:Physical structures of crystal systems that are important for devices
V.M. Ayres, ECE474, Spring 2011
Course Introduction:Lecture Time: Monday, Wednesday, Friday, 1:50-2:40 p.m.
Place: Room 2250 Engineering Building
Instructor: Virginia Ayres, Associate Professor
Website: http://www.egr.msu.edu/classes/ece474/ayresv
Telephone: 517-355-5236
email: [email protected], [email protected]
Office: C-104, Engineering Research ComplexOffice Hours: 6:00-9:00 p.m. evening before homework is due in the
Engineering Library
Prerequisites: ECE 183 & 303 & 305
Text: Principles of Electronic Devices, 6th Edition, B. Streetman and S. Bannerjee
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Grading
Exam 01 100 pts.Exam 02 100 pts.Final 150 pts.
Homework 50 pts. (discussion next page)
Total 400 pts
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Homework Grades
Homework 50 pts. = 12.5% of 400
5 pr/wk x 10 pts/pr x 16 weeks = 800 ptsIf you earn 672/800 42/50 = good score!
A string of 0’s for missed assignments:300/800 18.75/50 = grade lowering score
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Content v. Exams
Exam 01
Chapter 8Optoelectronics = semiconductor solar cells
Chapter 7Bipolar Junction Transistors
Chapter 6Field Effect TransistorsHigh electron mobility transistors
Chapter 5pn JunctionsSchottky barriers and Ohmic contacts
Chapter 4Charge carriers and diffusion in 3DLight generated carriers
Chapter 3 &Appendix IV
3D, 2D, 1D energy density of statesEnergy Bands (3D)
Chapter 2Quantum Mechanics: electrons as waves, (statistical) expectation values, quantum wells, quantum tunnelling
Chapter 1Notes on website
Physical structures: cubic semiconductors, metals, graphene and CNTsPlanes and directionsLattice matching
From:Topics:
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Content v. Exams
Exam 02
Chapter 8Optoelectronics = semiconductor solar cells
Chapter 7Bipolar Junction Transistors
Chapter 6Field Effect TransistorsHigh electron mobility transistors
Chapter 5pn JunctionsSchottky barriers and Ohmic contacts
Chapter 4Charge carriers and diffusion in 3DLight generated carriers
Chapter 3 &Appendix IV
3D, 2D, 1D energy density of statesEnergy Bands (3D)
Chapter 2Quantum Mechanics: electrons as waves, (statistical) expectation values, quantum wells, quantum tunnelling
Chapter 1Notes on website
Physical structures: cubic semiconductors, metals, graphene and CNTsPlanes and directionsLattice matching
From:Topics:
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Content v. Exams
FinalChapter 8Optoelectronics = semiconductor solar cells
Chapter 7Bipolar Junction Transistors
Chapter 6Field Effect TransistorsHigh electron mobility transistors
Chapter 5pn JunctionsSchottky barriers and Ohmic contacts
Chapter 4Charge carriers and diffusion in 3DLight generated carriers
Chapter 3 &Appendix IV
3D, 2D, 1D energy density of statesEnergy Bands (3D)
Chapter 2Quantum Mechanics: electrons as waves, (statistical) expectation values, quantum wells, quantum tunnelling
Chapter 1Notes on website
Physical structures: cubic semiconductors, metals, graphene and CNTsPlanes and directionsLattice matching
From:Topics:
V.M. Ayres, ECE474, Spring 2011
Course Introduction: Content v. Exams
Exam 01
Exam 02
FinalChapter 8Optoelectronics = semiconductor solar cells
Chapter 7Bipolar Junction Transistors
Chapter 6Field Effect TransistorsHigh electron mobility transistors
Chapter 5pn JunctionsSchottky barriers and Ohmic contacts
Chapter 4Charge carriers and diffusion in 3DLight generated carriers
Chapter 3 &Appendix IV
3D, 2D, 1D energy density of statesEnergy Bands (3D)
Chapter 2Quantum Mechanics: electrons as waves, (statistical) expectation values, quantum wells, quantum tunnelling
Chapter 1Notes on website
Physical structures: cubic semiconductors, metals, graphene and CNTsPlanes and directionsLattice matching
From:Topics:
V.M. Ayres, ECE474, Spring 2011
Lecture 01:
Intro to Course
Start:Physical structures of crystal systems that are important for devices
V.M. Ayres, ECE474, Spring 2011
High power n-channel field effect transistor
n n
Wilkipedia
V.M. Ayres, ECE474, Spring 2011
High power n-channel field effect transistor
n n
SiO2
Si
Vgate : + = ON- = OFF
n
n-type Si = extra electronsp-type Si = extra holes
V.M. Ayres, ECE474, Spring 2011
n n
SiO2 = insulatorSi = sc polySi = cheap schighly doped = fake metal
SiO2
Si
Doped polySi
Cu Cu
V.M. Ayres, ECE474, Spring 2011
Effective repeat unit = “Unit Cell”
V.M. Ayres, ECE474, Spring 2011
non metalnot known / uncertain
unusual structure
fccface centredcubic (cubic close packed)
hcphexagonal close packed
bccbody centredcubic
non metalnot known / uncertain
unusual structure
fccface centredcubic (cubic close packed)
hcphexagonal close packed
bccbody centredcubic
LrNoMdFmEsCfBkCmhcp
Amhcp
PuNpUPaThfcc
Acfcc
Luhcp
Ybfcc
Tm hcpErhcp
Hohcp
Dyhcp
Tbhcp
Gdhcp
Eubcc
SmPmhcp
NdPrCefcc
La
↓
UuoUusUuhUupUuqUutUubRgDsMtHsBhSgDbRfRabcc
Fr
RnAtPo544.7Bi
600.61Pbfcc
577Tl
hcp
234.32Hg
1337.33Aufcc
1768Ptfcc
2446Ir
fcc
3033Oshcp
3186Rehcp
3422W
bcc
3290Tabcc
2506Hf
hcp
1000Babcc
302Csbcc
XeITe904Sb
505Sn
430In
594Cd
1235Agfcc
1828Pdfcc
2237Rhfcc
2607Ruhcp
2430Tchcp
2896Mobcc
2750Nbbcc
2128Zr
hcp
1799Y
hcp
1050Srfcc
312.46Rbbcc
KrBrSeAsGe301.91Ga
692.68Zn
1357.8Cufcc
1728Nifcc
1768Cohcp
1811Febcc
1519Mn
2180Crbcc
2183V
bcc
1941Ti
hcp
1814Schcp
1115Cafcc
336.53K
bcc
ArClSPSi933.47Alfcc
923Mghcp
370.87Nabcc
NeFONCB1560Behcp
453.69Li
bcc
HeH
LrNoMdFmEsCfBkCmhcp
Amhcp
PuNpUPaThfcc
Acfcc
Luhcp
Ybfcc
Tm hcpErhcp
Hohcp
Dyhcp
Tbhcp
Gdhcp
Eubcc
SmPmhcp
NdPrCefcc
La
↓
UuoUusUuhUupUuqUutUubRgDsMtHsBhSgDbRfRabcc
Fr
RnAtPo544.7Bi
600.61Pbfcc
577Tl
hcp
234.32Hg
1337.33Aufcc
1768Ptfcc
2446Ir
fcc
3033Oshcp
3186Rehcp
3422W
bcc
3290Tabcc
2506Hf
hcp
1000Babcc
302Csbcc
XeITe904Sb
505Sn
430In
594Cd
1235Agfcc
1828Pdfcc
2237Rhfcc
2607Ruhcp
2430Tchcp
2896Mobcc
2750Nbbcc
2128Zr
hcp
1799Y
hcp
1050Srfcc
312.46Rbbcc
KrBrSeAsGe301.91Ga
692.68Zn
1357.8Cufcc
1728Nifcc
1768Cohcp
1811Febcc
1519Mn
2180Crbcc
2183V
bcc
1941Ti
hcp
1814Schcp
1115Cafcc
336.53K
bcc
ArClSPSi933.47Alfcc
923Mghcp
370.87Nabcc
NeFONCB1560Behcp
453.69Li
bcc
HeH
Wilkipedia
V.M. Ayres, ECE474, Spring 2011
non metalnot known / uncertain
unusual structure
fccface centredcubic (cubic close packed)
hcphexagonal close packed
bccbody centredcubic
non metalnot known / uncertain
unusual structure
fccface centredcubic (cubic close packed)
hcphexagonal close packed
bccbody centredcubic
LrNoMdFmEsCfBkCmhcp
Amhcp
PuNpUPaThfcc
Acfcc
Luhcp
Ybfcc
Tm hcpErhcp
Hohcp
Dyhcp
Tbhcp
Gdhcp
Eubcc
SmPmhcp
NdPrCefcc
La
↓
UuoUusUuhUupUuqUutUubRgDsMtHsBhSgDbRfRabcc
Fr
RnAtPo544.7Bi
600.61Pbfcc
577Tl
hcp
234.32Hg
1337.33Aufcc
1768Ptfcc
2446Ir
fcc
3033Oshcp
3186Rehcp
3422W
bcc
3290Tabcc
2506Hf
hcp
1000Babcc
302Csbcc
XeITe904Sb
505Sn
430In
594Cd
1235Agfcc
1828Pdfcc
2237Rhfcc
2607Ruhcp
2430Tchcp
2896Mobcc
2750Nbbcc
2128Zr
hcp
1799Y
hcp
1050Srfcc
312.46Rbbcc
KrBrSeAsGe301.91Ga
692.68Zn
1357.8Cufcc
1728Nifcc
1768Cohcp
1811Febcc
1519Mn
2180Crbcc
2183V
bcc
1941Ti
hcp
1814Schcp
1115Cafcc
336.53K
bcc
ArClSPSi933.47Alfcc
923Mghcp
370.87Nabcc
NeFONCB1560Behcp
453.69Li
bcc
HeH
LrNoMdFmEsCfBkCmhcp
Amhcp
PuNpUPaThfcc
Acfcc
Luhcp
Ybfcc
Tm hcpErhcp
Hohcp
Dyhcp
Tbhcp
Gdhcp
Eubcc
SmPmhcp
NdPrCefcc
La
↓
UuoUusUuhUupUuqUutUubRgDsMtHsBhSgDbRfRabcc
Fr
RnAtPo544.7Bi
600.61Pbfcc
577Tl
hcp
234.32Hg
1337.33Aufcc
1768Ptfcc
2446Ir
fcc
3033Oshcp
3186Rehcp
3422W
bcc
3290Tabcc
2506Hf
hcp
1000Babcc
302Csbcc
XeITe904Sb
505Sn
430In
594Cd
1235Agfcc
1828Pdfcc
2237Rhfcc
2607Ruhcp
2430Tchcp
2896Mobcc
2750Nbbcc
2128Zr
hcp
1799Y
hcp
1050Srfcc
312.46Rbbcc
KrBrSeAsGe301.91Ga
692.68Zn
1357.8Cufcc
1728Nifcc
1768Cohcp
1811Febcc
1519Mn
2180Crbcc
2183V
bcc
1941Ti
hcp
1814Schcp
1115Cafcc
336.53K
bcc
ArClSPSi933.47Alfcc
923Mghcp
370.87Nabcc
NeFONCB1560Behcp
453.69Li
bcc
HeH
Wilkipedia
V.M. Ayres, ECE474, Spring 2011
Carbon crystal structures:
Eight allotropes of carbon:
a) Diamond,
b) Graphite,
c) Lonsdaleite,
d) C60 (Buckminsterfullereneor buckyball),
e) C540,
f) C70,
g) Amorphous carbon,
h) single-walled carbon nanotube or buckytube.
Wilkipedia
V.M. Ayres, ECE474, Spring 2011
Carbon crystal structures:
Eight allotropes of carbon:
a) Diamond,
b) Graphite,
c) Lonsdaleite,
d) C60 (Buckminsterfullereneor buckyball),
e) C540,
f) C70,
g) Amorphous carbon,
h) single-walled carbon nanotube or buckytube.
Nine
The Nobel Prize in Physics 2010
Wilkipedia
V.M. Ayres, ECE474, Spring 2011
Carbon devices:
The Nobel Prize in Physics 2010
Tech News DailyWilkipedia
http://www.technewsdaily.com/for-wonder-material-graphene-nobel-prize-is-just-the-start-1388/
V.M. Ayres, ECE474, Spring 2011
In ECE 474:
The Nobel Prize in Physics 2010
Graphene
Carbon nanotubes
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