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Device characteristics EE3002: Analog Circuits EE5310: Analog Electronic Circuits Nagendra Krishnapura Dept. of EE IIT Madras

Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

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Page 1: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

Device characteristics

EE3002: Analog CircuitsEE5310: Analog Electronic Circuits

Nagendra KrishnapuraDept. of EEIIT Madras

Page 2: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

Triode: Iout vs. Vout

Page 3: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

Pentode: Iout vs. Vout

Page 4: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

nMOS: Iout vs. Vout

Page 5: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

NPN: Iout vs. Vout

Page 6: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

2N7000 (MOS): Iout vs. Vout

Page 7: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

2N7000 (MOS): Iout vs. Vin

Page 8: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

Graphene FET: Iout vs. Vin

Source: http://www.cnt.ecs.soton.ac.uk/gfet_web/model.htm

Page 9: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

Organic transistors

Source: Google image search “organic transistors i-v characteristics” https://www.google.co.in/search?q=organic+transistors+i-v+characteristics&tbm=isch&tbo=u&source=univ&sa=X&ei=vnBcVOzIKdCouQSVlIHABw&ved=0CDsQsAQ&biw=1454&bih=739

Page 10: Device characteristics - Indian Institute of Technology Madras organic transistors i-v characteristics Web Images Videos News More a 02 0.4 02 46 0.0 - hitl:.hvncalllacuk 100K Drain-Source

TFT transistors

Source: Google image search “tft transistor i-v characteristics” https://www.google.co.in/search?q=tft+transistor+i+v+characteristics&source=lnms&tbm=isch&sa=X&ei=EatgVJiAHIPVuQT45IKYAQ&ved=0CAgQ_AUoAQ&biw=1454&bih=739