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8/11/2019 Deposition Process
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The Deposition Process
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Learning Objectives
You Will Be Able to Explain The need for Deposition Processes The methods used to perform physical and
chemical deposition processes The advantages of different deposition
processes
The use of plasma for enhancing deposition
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Purpose of Deposition
Deposition places conductive or insulatinglayers on a substrate
Deposition processes create locallyconductive paths that can be used tointerconnect devices
Deposition can be used to build up morecomplex structures one layer at a time
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Deposition Types
Silicon Dioxide SiO 2 Insulating layers Protective coatings Gate oxides
Silicon Nitrides Protective layers Isolation
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Deposition Types
Polysilicon Heavily doped silicon Conductive Used for interconnects and gate
Metals Aluminum/Aluminum-Copper Tungsten Titanium Alloys
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CVD
Silicon Nitride
Silicon dioxide Polycrystalline Silicon
Epitaxial Layers Customized Surfaces
Insulator Conductors
Barriers
Chemical Vapor Deposition CVD Applications
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Deposition Processes
Physical or Chemical (or both?) Physical Processes Deposit the material
without chemical reactions
Chemical processes utilize liquid or vaporforms of precursors that react with the surfaceto form the desired deposition
It is possible to combine the processes andgain the benefits of each
Many processes are carried out in reducedpressure (partial vacuum) environments
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Requirements of Deposition
This process use many layers to form aproduct, any deposited layer must becompatible in many ways with what is
below it Film Stress Conformality Uniformity Step Coverage Thermal compatibility
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Result of Non-Uniform Deposition
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Conformal Coverage
Good ConformalCoverage
Poor ConformalCoverage
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Step Coverage
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Physical Vapor Deposition: PVDAdvantages:Versatile deposits almost anymaterial
Very few chemical reactions
Little wafer damageLimitations:
Line-of-sight
Shadowing
Thickness uniformity
Difficult to evaporate materials withlow vapor pressures
2 types : evaporation andsputtering
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Physical Deposition Processes
Sputtering Plasma is created by RF or HV DC source Inert gas such as Ar is used in a low pressure
environment Free electrons strike Ar atoms, causing
positive ions to be formed
Negatively charged target material attractsions
Ions dislodge particles that are deposited
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Practice Questions
1. What are the two main types of depositionprocesses?
Click once for each question.
Physical and Chemical Deposition2. What are commonly used metals for deposition?
Aluminum, tungsten, and copper
3. What does conformality of a deposition refer to?
The ability of the deposition to follow surface contoursevenly
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Sputtering
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Evaporative Deposition
Advantages Uniformly covers substrate Simple process without chemicals or gases
Disadvantages Alloys are difficult to deposit
Different metals have different vapor pressures High aspect ratio features are difficult to cover
Trajectory of evaporated particles tends to bevertical, which may not pattern sidewalls evenly
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Practice Questions
1. Which physical deposition process uses plasma?
Click once for each question.
Sputtering
2. What is an advantage of sputtering?
Low temperature process, good conformal coating
3. What is a disadvantage of evaporativedeposition?Difficult to deposit alloys, difficult to get good high aspect
ratio feature deposition
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Chemical Deposition Processes
Wet or Dry? Wet processes use liquids and immersion
Electroplating Electroless deposition Wet growth of SiO2 insulating layer (water vapor)
Dry processes use chemical vapors Atmospheric Pressure Chemical Vapor Deposition
Low Pressure Chemical Vapor Deposition Plasma Enhanced Chemical Vapor Deposition
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Steps in CVD
1. Transport reactants via forced convection to reaction region
2. Transport reactants via diffusion to wafer surface
3. Adsorb reactants on surface
4. Surface processes: chemical decomposition, surface migration, siteincorporation, etc.
5. Desorption from surface
6. Transport byproducts through boundary layer
7. Transport byproducts away from deposition region
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Chemical Deposition Processes Atmospheric
Chemical VaporDeposition (CVD) Wafers are heated Chemical gases are
introduced A temperature
dependent deposition
rate Mass transport limited
at higher temperatures
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Chemical Deposition Processes
Low Pressure (CVD) Surface reaction
limited at low pressure
Chamber may also beheated or unheated Low pressure
environment increasesmean free path
Better Step Coverageand conformality than
APCVD
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Advantages of LPCVD Faster growth Less autodoping Little diluent gas needed Lower gas consumption Fewer byproducts (particles)
Disadvantages: Line of sight Poorer step coverage shadowing
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Chemical Deposition Processes Plasma Enhanced Low
Pressure (CVD) Lower Temperature
Process due to Plasma
Enhancement Disassociation of precursor
gas molecules(Homogeneous reactions)
Ions bombard surface
making it more reactive Higher rates of deposition
are possible than withLPCVD
From MATEC Module 54
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Plasma Enhanced CVD(PECVD)
Good when temperature isrestricted
Provides reasonable depositionrates
Good film qualityConformal
May leave unwantedbyproducts on film
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New Methods forNanomanufacturing
Thinner layers are necessary for higherspeed transistors in IC design Gate oxide thickness < 50 A Approaches atomic layer dimensions
Atomic Layer Deposition A 2 step process of deposition and re-layering SiOH* + SiCl4 Si O-SiCl3 + HCl SiCl* + H2O SiOH* + HCl
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New Methods forNanomanufacturing
Molecular vapor deposition Anti-stiction layers in MEMS are needed to
avoid structures fusing to substrates Vapor deposition of compounds avoids
contamination found in liquid processes Oxygen plasma clean operation precedes
deposition process
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LIGA Process
LIGA includes X-Ray lithography, electroforming,and plating operations that construct high aspectratio features on substrates
Precision patterning of a deposited PMMA resist layerusing X-Ray lithography Areas remaining after development are plated with
metal
Photo resist and excess metal removed Remaining features are high aspect ratio metal