delano input nr01 sp01.PDF, page 1 @ Normalize ( Front Cover … › COMIN › file63739-COMPOUND SEMICONDUCTOR... · 2012-06-14 · according to the market analyst Nanomarkets. The

An Angel Business Communications publication November / December 2010 Volume 16 Number 8

Light opportunityThe expanding potential of LEDs

Solar focusCPV market set forgrowth

Lab to FabZnO prepares to fulfillbright promise

Aluminium NitrideA universal substratefor III-nitrides?

CS ConferenceWhat is next for thecompound industry?

Liquid deliveryReducing LED costs withhigh volume ammonia

Standard lightNew push to createHBLED standards

Picture the lightUsing photolithographyfor photonic LEDs

Light desiresQuantum dots revealrequired light

AIXTRON Ag / KAIseRsTRAsse 98 / 52134 HeRzOgeNRATH / geRmANy / [email protected] / www.AIXTRON.cOm

AIXTRON started in 1983 and is today a leading provider of deposition equipment to the semiconductor industry. with our advanced solutions customers worldwide build components for electronic as well as opto-electronic applications. As pace maker in our line of industry we are keeping always one step ahead.

HigHer Productivity // with almost 30 years of experience AIXTRON stands for proven engineering power and dedicated cus tomer support: Our equipment serves a diverse range of customers to manufacture highest LeD volumes at lowest cost.

better Performance // As the driving force in deposition equipment AIXTRON engineers power ful technology solutions: Our equipment is the best choice available to manufacture the brightest and most efficient LeDs.

smarter resources // AIXTRON’s intelligent equipment concept enables optimized use of resources: The results are extremely low consumption of consumables, minimized maintenance requirements and optimized utilization of human resources.

November / December 2010 www.compoundsemiconductor.net 3

editorialview

Editor-in-ChiefDavid Ridsdale [email protected] +44 (0)1923 690210

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Compound Semiconductor is published eight times a yearon a controlled circulation basis.Non-qualifying individuals can subscribe at: £105.00/€158pa (UK & Europe), £138.00 pa (air mail), $198 pa (USA).Cover price £4.50.All information herein is believed to be correct at time ofgoing to press. The publisher does not accept responsibilityfor any errors and omissions. The views expressed in thispublication are not necessarily those of the publisher.Every effort has been made to obtain copyright permissionfor the material contained in this publication.Angel Business Communications Ltd will be happy toacknowledge any copyright oversights in a subsequentissue of the publication.

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November / December 2010Volume 16 Number 8

CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY

The LEDs ultimate applicationDespite my interest in new technology I’m anything but an early adopter. I prefer my music playedthrough a well-engineered turntable, I have an ageing mobile that’s rarely got enough juice to take acall and my TV sports a cathode ray tube.

But a few weeks ago I decided to invest in the lighting of the future, the LED-based light bulb.What’s it like? Well, in a word, fantastic. It sends out a beautiful warm white light that puts thefluorescent bulbs in the house to shame and it needs just 8W to pump out enough lumens to beconsidered the equal of an 40 W incandesecent bulb.

So am I on the verge of replacing all the light bulbs in the house with LED-based ones? No.Although that would mean that I’d never have to shop for light bulbs for another 15 years, thisexercise would set me back a £1000!

Instead, I’ll bide my time while the LED industry continues to chip away at the cost per lumen. Theattack will come on two fronts: reducing the amount it costs to make an LED; and increasing theamount of light this chip produces.

In this issue, two features offer entirely different takes on how to pull the first of those levers.

A piece from Aixtron describes a holistic approach to doubling throughput of multi-wafer MOCVDreactors. It’s no surprise that turning to bigger wafers delivers part of this gain, but there are alsoimprovements associated with substantially reducing the ‘down time’ thanks to the introduction of anew ceiling plate.

A far more radical way to slash chip costs is to dispense with GaN and turn to a cheaper material.ZnO could fit the bill because it combines low cost with the promise of efficient emission andwidespread availability of its constituents.

Today ZnO LEDs are confined to the lab, but they will be in the fab by the middle of this decade,according to the market analyst Nanomarkets. The key question is how well they will sell. My guessis that in ten years time my house, along with many of yours, will be lit by GaN-based LEDs. Butmaybe I’ll have bought one ZnO version, just to see how it stacks up.

Richard Stevenson PhDConsultant Editor

Category One:Substrates, & Material AwardEpiwafer Tool AwardEpiwafer Processing AwardMetrology, Test and Measurement Tool AwardMetrology, Test and Measurement Process AwardDevice Design and Packaging Award

Category Two:Most Innovative Device AwardFab Management AwardR&D AwardChip of the Year Award

From backlighting TVs to empowering mobile devices and harnessing the sun’s energy, compound semiconductor chips are playing an ever increasing role in modern life. This is set to continue, but who had the biggest breakthroughs over the last 12 months? Which pioneering companies from

around the globe created the best opportunities for the compound semiconductor industry?

The CS Industry Awards will recognise the success and development along the entire value chain of the Compound Semiconductor industry from research to completed device. The Awards will focus on the people, processes and products that drive the industry forward. Compound Semiconductor has created the CS Industry Awards to recognise the vital individuals and companies that enable a company to achieve success in a competitive global market.

The categories represent key areas where challenge met innovation. The CS Industry Awards are a platform

that allows the compound semiconductor industry to judge and make their voices heard about the people and products and practises serving this industry.

The CS Industry Awards will remind us what is good about the industry – the people who drive it with their technical expertise and customer orientated perspectives. Nominations are open to all companies, individuals and organisations within the CS industry and voting will occur through Compound Semiconductor online and print services.

The call for nominations will close on December 17th 2010www.csawards.net/nominate

To find out how you can be involved contact Jackie Cannon, Director of SOLAR & IC Publishing

T: +44 (0)1923 690 200 E: [email protected]


Volume 16 Number 8

CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY contents

11 Concentrated growthThe CPV market is tipped for some remarkable CAGR growth providing compound opportunities.

14 Reaching potentialZnO has been a promising material for some time and now it prepares to leap into production.

17 III-nitride substrateCan AlN become a universal substrate to enable a more cost effective alternative for a range of devices.

24 High volume NH3 usageA liquid delivery system that will help with lower cost higher volume LED manufacturing.

28 Standard HBLEDsA concerted effort is on to develop standards to improve market uptake and reduce cost.

33 Photonic LEDs with photolithographyThe advances in lithography in the semiconductor world allows the fine line ability to assist photonics

36 6 inch GaN LED manufacturingThe industry needs to reduce the cost per lumen. Moving to a larger wafer is one key factor.

40 Quantum LEDsApplying quantum dots can improve the lumen out ofLEDs to achieve desired lighting levels

48 Transistor lasersCombining the laser and the transistor could lead to radical new devices for a range of applications.

51 Quantum detectionRemoving the strain from quantum dot infrared photodetectors can be achieved with novel method.

industry & technology

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06 GaN enters the smart grid?TriQuint receives Navy contract

07 SiGe BiCMOSCompound amps to lead

08 6 inches of full fieldBoost to EVG coffers

09 Nanotube researchYear-on-Year for CIGS

20 CS Conference 2011Speakers announcedTopics revealed

53 Research ReviewNavy unveils novel HBTHigh temp VCELs still fast

TriQuint receiveNRL contract forGaAs MMICsTriQuint Semiconductor, a RF productsmanufacturer and foundry servicesprovider, has received a $2 millioncontract from the U.S. Naval ResearchLaboratory (NRL) to develop S-bandamplifiers with new benchmarks for noisefloor, linearity and efficiency performance.

TriQuint was awarded the contract basedon its expertise with GaAs and othertechnologies. The NRL (MMIC) contractwill focus on low noise amplifiers and highpower amplifiers (LNAs / HPAs).

“We’re pleased the U.S. Navy has chosenTriQuint again for another program. It’sexciting to explore another opportunity withthe NRL that advances the state of theart,” said Tony Balistreri, TriQuintMarketing Director.

Has gallium nitride found away into the smart grid?RESEARCHERS from the University ofNorth Carolina, led by Jay Narayan haveintegrated gallium nitride with silicon as amaterial for electric grids. In light of this, theUniversity of North Carolina is researchinghow to balance an increased energydemand with a more efficient means ofdelivery through “smart” grids.

The smart grid is a recent development inelectrical engineering, which increasescurrent distribution efficiency compared totraditional electric grids. However, with newtechnology comes the need for newmaterial. Jay Narayan and John C. Fan haveled a team of researchers for the pastdecade into the process of developing away to “integrate” gallium nitride (GaN) ontosilicon chips for the use of smart grids andother technologies.

Although storage capacity is limited, there isa large response on the industry’s side toconfront the problem. ABB, a multinationalpower technology company, has beenlooking into ways to improve storagetechnology. Despite being the leadingcompany in the world for power technology,ABB has set up an outpost on CentennialCampus to research and enhance thepresent grid.

“You need the storage in order to charge upbatteries when you can produce the energy,

so you can use the stored energy when it’snot sunny, if you’re using solar energy as anexample,” Le Tang, the VP and Head of theU.S. Corporate Research Center for ABB,said. “We are working on the interface ofthe renewable sources with the power grid.They don’t naturally go together.”

Narayan’s goal is to be able to apply hisnew discoveries to the industry, especiallyfor the “smart grid.” He has been workingclosely with technology companies likeABB, Cree and Kopin to develop theconnections necessary to make an impactwith his new discoveries. Nevertheless,Narayan’s focus is not limited to smart grids.He is first and foremost a materials

scientist, so his main concern was to figureout a way to “marry” GaN to silicon.

Besides its use in smart grids, GaN can beused in various sorts of electronics,including LED lighting and high frequencycommunications for the military. Thepotential for savings is so great that thegovernment has invested a plethora ofresources into the research. Narayan hasreceived much of his funding from theNational Science Foundation (NSF), whichhas been an important contributor to smartgrid research. The NSF has poured anadditional $18.5 million into the FREEDMCenter on Centennial Campus, which is thecentre for the smart grid research.

DOW ELECTRONIC MATERIALS, abusiness unit of The Dow ChemicalCompany has announced plans to build anew metalorganic precursor manufacturingplant in Cheonan, Korea. The constructionof Dow Electronic Materials’ new Koreaplant is part of a multi-phase planannounced in June 2010 to expandTrimethylGallium (TMG) production capacityto meet the surging global demand for thematerial in the LED and related electronicsmarkets.

The facility is expected to be operational inearly 2011. Capacity expansion in the United States at existing facilities is alsoprogressing as planned, with new capacityexpected by the end of 2010 and continuing

through the first quarter of 2011. Totaladditional capacity resulting from the multi-phase plan is expected to be 60 metric tonsper year.

“Meeting our customers’ near-and long-termneeds for high-quality materials continues tobe a priority for us,” said Joe Reiser, globalbusiness director, MetalorganicTechnologies, Dow Electronic Materials.

TMG is a metalorganic chemical vapordeposition (MOCVD) precursor material thatis critical to the manufacture of LEDs andother compound semiconductor devices.Exceptionally high-quality materials andprecise delivery of metalorganic precursorsare essential to building reliable LEDs.

Dow breaks ground in Korea

6 www.compoundsemiconductor.net November / December 2010

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SiGe BiCMOS technology PLESSEY SEMICONDUCTORS hascommenced the development of a 0.35micron silicon germanium (SiGe) BiCMOSprocess technology on its 8-inch line at itsPlymouth, England semiconductormanufacturing facility. As part of its strategyof developing its three core product lines ofsensors, RF components and power

management devices it was decided that abespoke SiGe BiCMOS process wasrequired.

The products manufactured on this processwill take advantage of having a 70GHz,2.5V breakdown voltage architecturetogether with a 40GHz 5V breakdown

voltage architecture on the same substrate.Peter Osborne, Chief Technologist, said,“We have looked at SiGe bipolar andBiCMOS process technologies for sometime and have developed processes forother fabs. We believe that our exceptionalcomplementary bipolar processes on SiGetogether with our 0.35 CMOS capabilityshould provide a compelling platform fromwhich Plessey can develop outstandingproduct lines.”

GaAs & GaNbased Amps toOvershoot SiliconSTRATEGY ANALYTICS predicts that theGaAs and GaN based MMIC and hybridamplifier market is estimated to reach $227million in 2014. The global conversion fromanalog to digital broadcasting standards,which increases consumer demand forbandwidth, intensive applications and newservices is driving strong growth in CATV.

The recently published Strategy AnalyticsGaAs and Compound Semiconductor(GaAs) data model, “CATV InfrastructureAmplifier Forecast 2009-2014,” projects a10% CAAGR from 2009 to 2014 for thehybrid and MMIC amplifiers used in CATVinfrastructure.

This analysis shows a shift away fromSilicon to GaAs and GaN-based amplifiers.Strategy Analytics projects GaAs hybrid andMMIC amplifiers to grow at a CAAGR of21%, more than twice the market , to reachslightly more than $160 million in 2014.

GaN hybrid amplifiers will enter the marketin 2010 and grow strongly to reach nearly$18 million by 2014. During this same time,Strategy Analytics forecasts that SiliconMMIC and hybrid amplifiers will decline witha negative CAAGR of 9% falling to $49million in 2014.

“CATV network infrastructure is no longerjust television. It is central to the “triple-play”of voice, video and data,” noted EricHigham, Director of the Strategy AnalyticsGaAs Service. “As consumers adopt newbandwidth-intensive services, networksbecome more sophisticated to keep pace.This will encourage strong growth andattractive opportunities for amplifiersuppliers in the industry.”


news � review

AIXTRON has installed two AIX 2800G4 HT 2 inch MOCVD toolsat Jiangxi Changda, a new customer in the southern province of PRChina. The new HB GaN LED growth reactors have beensuccessfully installed and commissioned by the local Aixtron supportteam at the company’s facility.

Lu Bo, Executive VP of Jiangxi Changda comments, “I have beenimpressed with the reputation of this equipment thus our team hasbeen looking forward to the arrival of the new AIX 2800G4 HTMOCVD reactors. We need them to comply with our plannedcapacity increase as we manufacture more LEDs to meet thestrongly growing demand. The Aixtron systems match ourspecification for process flexibility, thickness uniformity, doping, and

composition. We had a swift and efficient installation thanks to theAixtron close local support and service.”

Christian Geng, VP Greater China and General Manager at AixtronTaiwan adds, “This is an important sale for Aixtron for severalreasons: Jiangxi Changda is a subsidiary of Lattice PowerCorporation in Nanchang, Jiangxi Province, which is one of our long-time customers and one of the first in China.

This company relies on several Aixtron MOCVD systems to developand manufacture HB LEDs for full color displays. Lattice Power isalso scaling up its R&D for the production of HB GaN LEDs onsilicon substrate for even more cost efficient devices.”

USHIO America, a provider of specialty andgeneral illumination lighting solutions as awholly owned subsidiary of USHIO Inc,today announced that the company hasstarted marketing the world’s first 6-inch full-field projection exposure system formanufacturing LED chips in the US.

USHIO successfully developed its newexposure system — model UX4-LEDs —thatallows full-field exposure of 6-inch waferswhile preventing wafer warpage ordistortion, achieving a throughputenhancement of 300% compared withconventional stepper systems. The UX4-LEDs exposure system is based on thesame platform as USHIO’s field-proven UXseries full-field projection exposure systems

6-Inch Full-Field Projection Exposure System

for semiconductors, FPDs, printed-circuitboards and MEMS. USHIO already hasinstalled more than 1,000 units of the UXseries systems throughout the world.

“The UX4-LEDs projection exposure systemis one of the most innovative items of LEDmanufacturing equipment today. Based on a

collection of our lighting-edge technologiesthat USHIO has fostered in its field-provenUX exposure system series, it is the world’sfirst 6-inch wafer full-field projectionexposure system. It will allow major LEDmanufacturers to dramatically increase theirmass-production capacity while loweringtheir manufacturing cost,” said KenjiHamashima, President/CEO of USHIOAmerica. “We are confident of introducingthis new product into the US market andgaining top market share by reinforcing oursales and technical support forces. Weexpect to ship the first unit within this year,since several major LED manufactures havealready been evaluating this system formass-production.”

EV GROUP announces 20%+ increase in revenueEV GROUP today announced thatthe company witnessed a morethan 20-percent increase inoverall revenue during fiscal2010, ended September 30.EVG attributes this growth, inlarge part, to continued demand forequipment used in advancedmanufacturing of 3D ICs, CMOS imagesensors and MEMS devices.

In fact, the company reports it has grown,on average, approximately 20 percent year-over-year since 2003-successfully avoidinga drop in order intake and revenue even in2008 and 2009 despite the globaleconomic recession. According to HermannWaltl, EVG’s executive sales and customer

support director, the companycapitalizes on its technology andmarket leadership by continuouslybuilding upon its extensiveexperience in bringing new and

innovative products to market. “It’sbeen another solid year for our

company and demonstrative of ourcontinuous investment in R&D. We firmlybelieve that our strong emphasis on R&Dprovides us with an edge in supporting ourcustomers’ increasingly sophisticatedmanufacturing requirements.

As a result, we’ve witnessed continuousyear-over-year growth since our inception in1980-as well as expansion into key, high-growth markets, which has played a

significant role in allowing us to navigatethrough this cyclical economy.”EVG also announced that its EVG770Automated NIL Stepper won the prestigiousfifth annual EuroAsia Semiconductor IC Industry Award in the category of back-end-of-line (BEOL) waferprocessing.

The IC Industry award winners are voted bycustomers and users of the tools. This winpoints to the company’s excellence inservice and the technology prowess of the EVG770 system, which is designedfor step-and-repeat large-area UV-nanoimprint lithography (UV-NIL) processesfor various applications, including 3D ICs,MEMS and CMOS image sensors.

Aixtron Installs 2 MOCVD Systems


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AIXTRON AG has announced a new orderfor a Black Magic Plasma Enhanced CVD(PECVD) system from DTU Danchip andDTU Nanotech at the Technical University ofDenmark in Lyngby, Denmark.

The institution placed the order for a 4-inchconfiguration deposition system during thesecond quarter of 2010. Following deliveryin the current quarter, it will be used for thegrowth of graphene and carbon nanotubesfor a number of different applications, suchas cell-microchip interfaces, lab-on-chipfilters and other microfluidic components,transducers and electrodes. Severalresearch groups covering physics,chemistry, lab-on-chip and lifesciencesubjects will use the new system.

Associate professor Peter Bøggild fromDTU Nanotech comments, “We wanted aturnkey solution for graphene and carbonnanotubes. In our evaluation, the BlackMagic system was indeed very mature andcapable of large-scale, homogeneousproduction of these carbon nanomaterials ina reproducible manner. Since one of ourmain objectives is research for practicalapplications, reproducibility, reliability andscalability in addition to material quality arevital. Based on recommendations fromtrusted researchers and personal

DTU Danchip to spearheadnanotube research

experience, we have no doubt that theAIXTRON system will live up to our highexpectations. In fact, we have a long line ofusers ready to use the Black Magic system.”

Peter Bøggild received his Ph.D. degree atCopenhagen University in 1998 and is headof the Nanointegration research group at theDTU. He received the prestigious Danishaward ‘AEG Elektronprisen 2009’ for hispioneering work on nano-tweezers andactuators, and has worked with carbonnanomaterial for many years.

The Danchip cleanroom contains a selectionof state-of-the-art process equipment forlithography, etching, thermal processing,thin film deposition, packaging andcharacterisation, professionally maintained.

Exceptional y-on-ygrowth predictedfor CIS/CIGS MARKETSANDMARKETS report ‘ThinFilm PV- Advanced Technologies andGlobal Market (2008-2015)’ says thatthe CIS/CIGS market is expected togrow with a maximum CAGR of 43.9%from 2010 to 2015. Low cost andoptimum efficiency of thin film PV cells isdriving the growth of the thin film PV inoverall photovoltaic market, saysMarketsandMarkets. The global thin filmphotovoltaic market is expected to growfrom $3,406 million in 2009 to $19,422million in 2015, at an estimated CAGR of32.2% from 2010 to 2015.

The amorphous silicon market iscurrently contributing the maximumproportion to the total thin film PV marketwith growing opportunities.

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CPV � market analysis

CPV market is tippedfor take-offThe concentrated photovoltaics industry should deliver massive growth over the next few years,according to market analyst Carlos Márquez from CPV Today. But this success requires recentinstallations to demonstrate that this technology can generate electricity reliably, while offeringinvestors a good return on their money. Richard Stevenson reports.

For many people the recent economic downturn willbe the toughest that they have ever lived through.

While it may not have been as bad as the depression ofthe 1930s, when thousands and thousands queued onthe streets for hours for food, many people have lost theirjob, seen the value of their investments plummet and arenow facing a reduction in the services provided by theirgovernment, which is squeezing its belt.

It’s not just individuals that have suffered over the last fewyears. Industry has also taken a battering, with the lack ofavailable capital hitting the emerging technology sectorhard. This includes the concentrated photovoltaics (CPV)sector, a fledgling industry that was widely tipped to takeoff in the days before the phrase “credit crunch” had beencoined.

The lack of capital available to CPV start-ups hashampered their efforts to promote themselves; acceleratetheir research and development; and expand theirmanufacturing capacity. It has also been a contributingfactor to acquisitions, such as that of Sol3G, which hasgone under the wing on Abengoa Solar. In addition,capital constraints have led to postponement of someinstallations, including the world’s biggest CPVdeployment, a 154 MW project in Mildura, Australia. Thiswas caused by a Chinese investor withdrawing fundingfrom Solar Systems.

However, some of the CPV system builders have madeprogress over the last few years. Carlos Márquez, ananalyst at CPV Today, points outs that Concentrix scaledup in 2008, which was right in the middle of the wholecredit storm. And at the start of this year Amonixannounced that it aimed to increase its annual productioncapacity from 30 MW to 100 MW per annum. By the endof this year this US outfit may well have topped thatfigure, because this July it also signed a lease on amanufacturing facility in North Las Vegas, Nevada,

creating nearly 300 jobs and the opportunity to add afurther 150 MW of production capacity. Márquez believesthat this hike in capacity will pay dividends, allowingAmonix to attain economies of scale.

It’s not just the likes of Amonix that have a positive view ofthe future. Despite concerns over double-dippedrecessions and very slow recovery rates, investors are

Concentrix Solar GmbH, a spin-off of Fraunhofer Institute for Solar EnergySystems, was founded in 2005 and is located in Freiburg, Germany. Itexpanded its production capacity in 2008, and is now actively pursuing adevelopment of a 50 MW utility-scale power plant in the Western Cape,South Africa. Credit: Concentrix


market analysis � CPV

showing an increasing interest in CPV technology.Deployment of these systems is also on the up, andMárquez calculates that there has been more than 70 MWof new project announcements scheduled for 2010.

By far the biggest of these is a 59 MW installation inTaiwan that will be undertaken by Guascor Fotfin and Ya-Fei Green Energy. Once completed, this will be thelargest CPV installation in the world. There have also beenannouncements of 1 MW projects by Concentrix Solar,Sol Focus and Opel, which will lead to CPV deploymentsin Questa, New Mexico, Victorville, California, andPortugal.

Looking further ahead, Márquez is tipping the industry fortremendous growth over the next few years, estimatingthat installations could approach 1 GW by 2016.However, he openly admits that there is a high degree ofuncertainty in that headline figure.

Crunch timeMárquez believes that the future of CPV rests on theoutcome of projects currently being deployed, whichtypically range in size from several hundred kilowatts toone megawatt. “These projects will set the track recordfor CPV. I think that the market will take off in terms ofrevenue if companies can prove that those projects havebeen successful; were built on-time, on-budget; producean amount of electricity that they were meant to produce;and that they made investors a decent return.”

It is possible that the CPV market could top the 1 GWmark by 2016 because Márquez has only considereddeployments of grid-connected solar farms with an outputof at least 500 kW. There are also opportunities for CPVsystems to provide power for either companies, or for

rural communities that are not connected to their nation’selectrical infrastructure. “Those installations requiresmaller capital costs, which makes them a good way forcompanies to get started and upgrade their technology,”says Márquez.

If Márquez’s prediction for a tremendous ramp in CPVsystem deployment happens, it should not put unduestrain on this industry. That’s because a good supplychain has fallen into place over the last few years. Thevast majority of firms involved in CPV are specializing inone area, such as the manufacture of solar cells, thebuilding of modules, or the construction of solar systems.“The only company that I am aware of that is completelyintegrated is Emcore,” says Márquez.

Cell multiplication One of the key components in every CPV system is thetriple-junction solar cell. According to Márquez, noconcerns have been reported regarding the reliability orperformance of these cells, which are typically used withlight concentration factors of 500. The thermal load onthe cell is preventing progression to even higherconcentrations, which promise a cut in electricalgeneration costs. However, there are ongoing efforts atimproving thermal management, including research atIBM.

CPV system manufacturers now have far more sources forobtaining their triple-junction cells. For many years thechoice was between two US suppliers, Emcore andSpectrolab, and the European photovoltaic manufacturerAzur Space Solar Power. Now the likes of CyriumTechnologies, Spire Semiconductor, Solar Junction,Microlink Devices, Arima and Sharp can be added to thisgrowing list, which will soon be strengthened by III-Vstalwarts RF Micro Devices and JDSU.

Márquez is adamant that increased competition will begood for the CPV industry. A couple of years ago therewere fears that cell production would fail to keep pacewith a sharp increase in demand for CPV systems. “Withthe new entrants I don’t think that there is a chance thatthere is either going to be a shortage, or a situation wherea few suppliers control the market.”

Triple-junction solar cell costs should fall thanks to greatercompetition between their manufacturers. In turn, this

Sol Focus is winning contracts for larger and largerCPV deployments. In 2008 it completed a 200 kWinstallation in Puertollano, Castilla-La Mancha, Spain,and this year it finished a 1 MW facility in Victor ValleyCollege in Victorville, California. While many CPVsystem manufacturers use Fresnel lenses to focus thesun’s rays, Sol Focus prefers to use mirrors for thispurpose. Credit: Sol Focus


CPV � market analysis

should help to reduce system costs, but it will not make ahuge impact. To really drive down the cost of CPVsystems requires a significant cut in the cost of thetracker, which is the most expensive component.

The high cost of these trackers, which tend to be a dualaxis design, stems from the level of engineering employedto create an incredibly precise tool for focusing the lightonto the cell. What’s needed, according to Márquez, isthe introduction of “clever optics” that will cut costs byallowing tracking systems to be less precise withoutcompromising performance; easier and cheaper tomanufacture; and easier to repair and maintain.

Lenses or mirrors?The tracker adjusts the angle of the modules that containeither mirrors or Fresnel lenses for focusing light onto thecells. Of these two technologies, the latter is becomingincreasingly popular. “It is tried and tested. It does the job,and there is a good supply of lenses,” says Márquez.

A choice of lenses will help to reduce the CPV systems’cost, which can be measured in several ways. Calculatingthe cost-per-Watt is a very common approach throughoutthe solar industry, but one that Márquez dislikes, becauseit ignores the lifetime of the system.

“The lifetime cost of the system is more important than thecost-per-Watt installed,” argues Márquez. In his opinion, asystem that is more expensive on a cost-per-Watt basisbut produces more electricity and lasts for 40 years islikely to yield more profit than a cheaper system that failsafter 20 years. “The cost of energy is probably a moreuseful metric.”

On that basis, a CPV system already offers the cheapestway to generate electricity in some parts of the world. Onislands such as Hawaii most of the electricity is currentlyproduced by diesel generators, a relatively expensive wayto generate power.

Most people don’t live in such remote locations, however— burning coal produces most of the electricity consumedby humanity. Today this electricity generating process issignificantly cheaper than that associated with CPVsystems, but this margin does not have to be eliminatedto make the greener technology an attractive option forsome companies. That’s because the utilities have tomake a profit. If a company can install a CPV system onits grounds, and the cost of the electricity produced iscomparable to the price it pays the utility, then it maydecide to invest in this technology.

It is expected that there will come a time when CPVreaches grid parity in most places. Márquez expects thatto take four to five years, by which time the generatingcosts of a typical CPV system will be around $0.08/kWhr.

As electricity generating costs for CPV systems fall anddeployment rockets, many of the 35 or so systemmanufacturers in this sector will flourish. But it willprobably not be a wonderful time for all. “In the solarindustry in general there seems to be a trend for larger,more established companies acquiring smaller companieswith specialist technologies,” says Márquez. “I think wewill see that happening in CPV as well.”

� Carlos Márquez is the author of The ConcentratedPhotovoltaics Industry Report 2010.See www.cpvtoday.com/cpv-report

This summer Amonix completed its 240 kW CPV system deployment atthe River Mountains Water Treatment Facility, Nevada. Recent efforts bythis company also include a substantial expansion to its manufacturingcapacity. Credit: Amonix.

“In the solar industry in general there seems to be a trend for larger, more established

companies acquiring smaller companies with specialist technologies. I think we will

see that happening in CPV as well.” Carlos Márquez, CPV Today


market analysis � ZnO LEDs

LEDs: ZnO prepares toleap from lab to fabA dozen or so companies are developing ultraviolet and white LEDs for market. In two to four yearstime products will launch and kick-on to net over $400 million by 2015, according to NanoMarketsanalyst Lawrence Gasman. Richard Stevenson investigates.


ZnO LEDs � market analysis

A s a material for making LEDs, ZnO has loadsto recommend it. It is cheap, non-toxic, and

chemically stable; it is incredibly well understood; it canemit light very efficiently; and it is capable of makingdevices that span the ultraviolet to the infrared.However, despite all its promise, the ZnO LED has failedto make any commercial impact. That is partly becausematerial issues have hampered device development —realizing p-type doping in this material has been a majorchallenge, and there have also been differences of opinionover the design of the active region needed to yield alight-emitting device.

While these issues have undoubtedly hampered theprogress of the ZnO LED, they are not the primary reasonwhy this device is still confined to the lab, according toLawrence Gasman, Principal Analyst at the marketresearch firm NanoMarkets. He believes that if a large firmhad financed a major effort at commercializing ZnO LEDs,they could have ironed-out the technical issues in just ayear or so.

“I see the obstacles as being on the business side,” saysGasman, who points out that winning venture capitalinvestment for novel semiconductor businesses is far, farharder than it was before the credit crunch. However,that’s not to say that there is no funding for ZnO LEDdevelopment. This device has ‘green’ credentials, andsome start-ups have won funding on the back of thatattribute.

Gasman expects the first ZnO LEDs to hit the market intwo to four years time. “The LED market is slated to growvery fast now, and if ZnO can knock off a segment of thatmarket in a time starting in three or fours years from now,then that [sub-section of the] market can be verysubstantial.” He believes that ZnO LEDs will make animpact and net $415 million in 2015. That will make thisdevice the biggest earner for ZnO, which will also beused to build transistors and provide a transparent,conductive oxide for displays and photovoltaics (see box“The great versatility of ZnO”).

Starting with ultravioletThe pioneers of ZnO LED manufacture will begin bymaking ultraviolet emitters. This is the simplest form of thedevice to produce, because ZnO’s bandgap is 3.3 eV.

“The market for [ultraviolet lighting] is not huge, but it’s agood place to start, because you are not completelyreliant on the whims of everyday consumers,” claimsGasman. Today lamps with fairly short lifetimes are themost common providers of ultraviolet emission, which isused for water purification and medical treatments. ZnOLEDs promise to be a far more reliable source.

Another reason why ZnO LED makers will target the

ultraviolet market first is that it will allow them to get theirbusinesses off of the ground without having to competewith huge, well-established GaN chipmakers. “If you are inthe UV business, you are talking about a much moremodest supply chain [than the general illuminationbusiness], which a small firm could conquer with a coupleof decent sales guys and a business development guy,”says Gasman.

Once the ZnO LED manufacturers have enjoyed somesuccess in this market, they will add phosphors to theirdevices to produce white emitters. These promise to becheaper than the GaN incumbents, which are starting topenetrate general lighting but need to drop in price to fuelthe rapid adoption of this technology.

“The hope is that ZnO will give a range of colors that aremore attractive than CFLs and GaN LEDs,” says Gasman.This could help to spur the sales of these ZnO emitters,because, according to Gasman, many people have theperception that GaN-based LEDs produce a cold andharsh form of white light. “The companies that are workingon ZnO LEDs claim that you can get better color qualityfrom these LEDs.”

According to Gasman, another strength of the ZnO LEDis the abundance of its constituents: “There is plenty ofnitrogen around, but maybe there is some constraint ongallium. Remember that there has been a dance betweencost and supply of indium, for indium tin oxide.” Althoughincredibly small amounts of indium tin oxide are needed tomake a display, billions and billions of screens are madeevery year.

One difficulty facing the pioneers of any innovativetechnology is the reluctance of potential customers whomay be suspicious of adopting the new materials.However, this should not be a major issue for the ZnOpioneers. “Samsung has announced using carbonnanotubes for backlighting and displays, and they areactually producing that now,” says Gasman. He is alsoaware of companies working with silicon quantum dots,and he sees ZnO as just another emerging material in thissector.

According to Gasman, there might be up to a dozencompanies working towards the commercialization of ZnOLEDs. They tend to keep a very, very low profile. “In somecases they are funded by famous names,” says Gasman.

The progress of all of these firms is held back by thematerials and processing equipment. One issue is thatthere are only about ten producers of crystalline ZnO, andthe substrate sizes produced by them are too small formass production. For example, the material offered by theAtlanta-based firm Cermet is either shipped as 10 mm by10 mm squares, or 25 mm-diameter circular substrates.


market analysis � ZnO LEDs

Although ZnO LED developers would prefer tomanufacture their devices on native substrates, partlybecause this should offer the best route to high qualitymaterial, these firms might begin by using sapphire. Thedifference in lattice constant between ZnO and GaN isonly a few percent and both materials share the wurtzitecrystal structure, so many of the challenges of growingthese wide bandgap materials on sapphire are similar.

ZnO LED developers are yet to reach a consensus on thebest deposition technique for epitaxial growth of theheterostructure. For many of these firms, optimization ofthe growth technology, which will form a key part of theirintellectual property, is their overriding goal.

It is possible to buy commercial ZnO deposition tools,such as the range of MOCVD reactors made byStructured Materials Industries of Piscataway, NJ, thatfeature high-speed rotating discs. These Spin CVD tools— which are available as single wafer, 1-inch or 2-inchtools, or multi-wafer variants capable of accommodatingup to 38 wafers with a 2-inch diameter — employ auniformly heated deposition plane and are capable ofgrowth rates of 10-20 nm/minute (for more details see“Nitride LEDs get brighter with transparent ZnOcontacts,” Compound Semiconductor September 2007,p. 14).

However, according to Gasman, many ZnO developersare not buying commercial tools and using them off of theshelf. Instead, they are either building their own tools oradapting commercial ones. In some cases, they are alsopioneering novel forms of growth. For example, ZnOdevice specialist MOXtronics, which is based inColumbia, MO, has developed a hybrid beam deposition

process that it claimed to be comparable to MBE. Theunique features of this MBE-related approach are a ZnOplasma source, which is produced by illuminating apolycrystalline target with either a pulsed laser or anelectron beam, and a high-pressure, oxygen plasmacreated by a radio-frequency oxygen generator.

Another issue that ZnO LED developers might bestruggling with is the design of the active region. Someresearchers are employing a homojunction, while othersare considering which pairing of materials is best forforming the active region. Some of the early work on ZnOlight emitting structures involved the combination of ZnOand MgZnO, but more recent research has shown thatthis ternary tends to phase separate when the magnesiumcontent exceeds 33 percent, due to differences in crystalstructure – MgO is cubic. One promising alternative isBeZnO, which shares the hexagonal crystal structure of ZnO.

There is no doubt that all these ZnO developers face anup-hill task. However, they will be motivated by the dreamof creating cheaper, high quality ultraviolet and whiteLEDs. And if companies in the supply chain can sharetheir vision and play their part, then many of themanufacturing issues will fade away. For example,although the crystalline ZnO substrates available todayare to small for high volume manufacture, the technique toproduce them, hydrothermal growth, is well establishedand churns out tones and tones of quartz every year. Ifsuch efforts to scale up ZnO are applied alongside otheractivities to improve the supply chain, then maybe thesolid-state lighting revolution will turn out to be a two-pronged affair: GaN LEDs and their ZnO cousins.

� Lawrence Gasman is the author of the report Zinc Oxide Markets, 2010 and beyond.

“The great versatility of ZnO”Interest in ZnO is on the rise. According to theresearch firm Nanomarkets, which is based in GlenAllen, Virginia there has been a flurry of patent activityover the last few years. What’s more, sales of ZnOdevice and coatings are now set to take off, more thantripling to $1.3 billion in 2015 and hitting $2.3 billionby 2017. A significant proportiozn of this revenue willcome from the sale of LEDs.

However, ZnO will be increasingly used as a low-costelectrode and conductive coating in displays, lightingand photovoltaic applications. There is also interest inZnO thin-film transistors, and ZnO-based powerelectronics.


substrates � technology

AlN: can it become a universalsubstrate for III-nitrides?Physical vapor transport can produce high-quality 2-inch AlN crystals with low dislocationdensities. Substrates sliced from these crystals provide an ideal platform for the growth ofultraviolet LEDs, lasers and RF devices, says a team from Nitride Crystals.

III-nitrides are undoubtedly a remarkable family ofsemiconductors. Unlike their semiconductor cousins,

high-quality films of this material can be grown on almostany substrate - sapphire, silicon and even glass.

However, despite their propensity for forming singlecrystals on practically anything, no III-nitrides occurnaturally. Consequently, there has been continuing interestin manufacturing a native, single crystal substrate forthese nitrides since the first demonstration of epitaxialgrowth of GaN by HVPE in 1969 by Paul Maruska andco-workers at RCA Sarnoff. Over the intervening decadesnitride devices have kicked on to demonstrateunexpectedly good performance characteristics despitehigh dislocation densities. Blue LEDs, for example, canrealize excellent reliability and power at dislocationdensities of 5 x 109/cm2, a value that would kill lightemission in their GaAs and InP longer wavelengthcousins. However, in general, semiconductor devices haveshown highest performance on low-defect native substrates,so there is no reason to suspect that the III-nitrides, evenwith their unique growth habit, will be any different.

There are three options for native substrates: AlN, GaNand InN. To date, no one has produced bulk crystal InN;GaN has been grown from solution at high pressure; andAlN has been produced using relatively straightforwardphysical vapor transport (sublimation). Another strength ofAlN is that it is the most promising universal substrate forepitaxy of a wide variety of nitride devices, includingLEDs, lasers, RF and surface acoustic wave (SAW)devices. Of all the III-nitrides, it has the largest bandgap;highest thermal conductivity, breakdown electric field andSAW velocity; and the smallest a-lattice parameter.What’s more, deposition of high-quality epilayers on thisplatform is relatively easy, because all AlInGaNcompositions are in compression when grown on AlN,thus minimizing cracking probability.

However, although the PVT process used to grow truebulk AlN crystals was first identified by Glen Slack andco-workers at GE Research Lab more than 35 years ago,

it has proven extraordinarily difficult to grow largediameter, low-defect crystals, even with well establishedexperience in SiC growth. Initially, there was little interestin scaling crystal dimensions of AlN, but this has nowchanged thanks to the dramatic success of the nitrides.

Today, a handful of companies have reported success indeveloping at least small, high-quality AlN substrates.These include the US firms Crystal IS, Hexatech andFairfield Semiconductor; the Japanese materials specialistSumitomo Electric Industries; the German outfit CrystAlN;and ourselves, Nitride Crystals, which has bases in boththe US and Russia. To our knowledge, we, along withFairchild, are the only companies shipping AlN substrateson a commercial basis. We focus on sales of roundsubstrates, while Fairchild ships 10 mm squares. Of theother players, CrystAlN has recently entered the market,and Crystal IS and Hexatech have reportedly establishedinternal production of AlGaN devices such as deep UVLEDs. Perhaps the fact that both Crystal IS and Hexatechhave decided to focus their AlN wafer manufacturingtoward their own device products is the clearestindication of the potential importance of that material.

Our approach to operating in the AlN substrate anddevice market is based on this belief: The AlN substrateand device markets will never be significant unless majordevice players and substrate manufacturers adopt thetechnology. Therefore, we place no restrictions on how

Figure 1 AlGaNepitaxy on AlN


technology � substrates

our customers use our AlN substrates. Production of oursubstrates has been governed by two major factors:nitride epitaxy on sapphire has a dislocation density of 5 x107 – 5 x109/cm2, yet LED performance is excellent; andcommercial manufacturers of optical devices need 2-inchwafers as a minimum size. Taking these factors intoaccount, we have set ourselves the goal of scaling ourwafer capability to 2-inch diameter as quickly as possiblewhile maintaining quality that is “good enough.” What isour take on “good enough”? That the density of substratedislocations is three-to-six orders of magnitude lower thanthat of epitaxy on sapphire.

We have developed production technology for delivering arange of 15 mm diameter AlN crystals and epi-readysubstrates, which can be shipped with the aluminum faceepi-ready polished, and the nitrogen-face polished or finelapped, with US flats. All variants have excellentcrystallinity, low dislocation density, high UV transparencyand high resistivity. This is borne out by X-ray diffractionmaps that show that the single peaks of the bestsubstrates have a full-width half maximum less than 100arcsec in both asymmetric and symmetric scans. Thesesubstrates provide a foundation for growing high-qualityAlGaN layers (see Figure 1). We have also recently shownthat it is possible to produce larger crystals - we haveachieved fully mono-crystalline 2-inch diameter AlN byusing low defect SiC seeds that we also grow by PVT.

Scaling to 2-inch Early in our AlN development we realized that AlN can besuccessfully seeded by PVT on SiC. The growing AlN-and-SiC seed forms a solid solution. Near the interfacethe concentration of silicon and carbon in AlN can behigher than 5 percent, giving rise to conductive AlN;however, the concentration of these two elements fallsrapidly with distance from the interface, where resistivity isfar higher. Second-generation (grown on AlN seeds) AlNhas resistivity in excess of 5 x 1011 Ohm-cm. We have notstudied the effects of silicon concentrations of more than5 percent in AlN, but on the basis of the seed growths wespeculate that it will be possible to make conductive AlN(or perhaps more correctly AlSiN?).

A micropipe-free, low dislocation seed is required only forthe initial growth of a thick AlN layer. Figure 2 shows theinitial micropipe-free 6H-SiC seed. Once this thin AlNlayer is separated from the SiC, it is then employed for thegrowth of the AlN bulk crystal. Figure 3 shows the AlNlayer separated from the SiC seed and attached to thecrucible lid. The pattern of cracks that heal during bulkgrowth attests to the high quality of the AlN seed layer.

Typically, as shown in Figure 3, the seeds used toproduce 2-inch AlN have a diameter that is much larger.This removes edge striations and defects that occurduring growth. The high quality of this material is revealedby the lack of features in crossed-polarizer images (seefigure 4). Before the AlN crystals are ground to 2-inchdiameter, they are used as seeds for fabricating AlNmaterial of this size.

AlN sublimation issuesOur outfit, just like the team at CrystAlN, has extensiveexpertise in the growth of bulk single crystal SiC.However, despite this background, scaling up the growthprocess to 2-inch has been surprisingly difficult. UnlikeSiC, AlN dissociates congruently into aluminum andnitrogen gas; however, aluminum vapor at hightemperature is extremely reactive and forms lower-temperature eutectics with many materials that would beotherwise inert. To deal with these issues, we use TaCcrucibles, which is a process that Hexatech and CrystAlNhave also reportedly adopted. These crucibles areemployed for the growth of the initial thick layer of AlN ina graphite system. A combination of TaC and tungstencrucibles, along with tungsten reactors, is then used forgrowth of bulk crystals. The historical evolution of our AlNcrystals from 15 mm diameter to 2-inch diameter isillustrated in Figure 5. In an intermediate phase, the singlecrystal center was surrounded by a polycrystal ring as weexpanded the micropipe-free SiC seeds. Recently,however, we have progressed to the production of fullymono-crystalline material.

There are wide variations in the reports of optimumgrowth conditions for AlN. Hexatech reports that theyachieve very high quality crystal growth only on the

Figure 2 Thick,micropipe-free60 mmdiameter 6H-SiC seed

Figure 3 AlNlayer separatedfrom SiC seedand attached tocrucible lid

Figure 4 Acrossedpolarizer photoof a typicalwafer. Theedge striationshave not beenfully removedby diametergrinding

Figure 5 Evolution of AlN crystals and substrates from15 mm to 2-inch diameter

Figure 6 VirtualReactor simulation of crystal growth


substrates � technology

nitrogen-face and only at temperature of 2600 °C. Onthe other hand, we are able to grow “good enough” AlNcrystals on the aluminum-face or nitrogen-face at relativelylow temperatures, ranging from 1950 °C to 2050 °C,using a near atmospheric pressure N2.

We utilize the VirtualReactor-AlN code from Soft-Impactto model growth conditions in detail. Figure 6 shows anexample of a VR simulation of crystal growth.

Making substrates For AlN substrate production, crystals are separated fromseed holders and the head cropped off, before beingground to a 2-inch diameter and oriented by X-ray. Bothmajor and minor US-convention flats are ground into thecrystal. The round crystal is mounted to a slicing fixtureand the mis-orientation angle of the substrates is fixedwith X-rays, before a multi-wire diamond saw slices thecrystal into wafers. The sliced wafers are lapped asneeded and then subjected to chemical mechanicalpolishing (CMP). Finally, the wafer is cleaned andpackaged in a nitrogen atmosphere.

We have developed our own CMP final polishing for theproduction of seed substrates; however, final polishing ofthe AlN substrates can be made by Novasic (France) onrequest. Novasic has established a unique, industry-recognized polishing capability for hard materials such assapphire, SiC and AlN.

Characterization data, such X-ray diffraction and atomicforce microscopy (AFM) measurements, is typicallycollected on the wafers after cleaning. A goodassessment of the wafer production process is revealedby the quality of the epitaxy. Mapping of the surfacetopography with an AFM reveals the absence of scratchesin the epi-layer, attesting to the quality of the CMP.

The dislocation density of the majority of crystals is in therange 1 x 104 to 1 x 105/cm-2 (see Figure 7). This meetsour criterion of “good enough.” The ultimate test of thesubstrate quality is epitaxy growth and deviceperformance. UVA LEDs grown on AlN substrates canshow a four-fold efficiency improvement over those grownon sapphire; however, to date, deep UV LEDs made byCrystal IS on their AlN substrates have not shownremarkably improved efficiency. This may be due tofactors such as impurities rather than crystal quality.

For deep UV LEDs the transparency of the AlN substrateis particularly important. Due to its 6.02 eV bandgap AlNshould be transparent down to nearly 200 nm. However,early substrates, even though optically almost colorless,had a rather sharp transmission cut off near 300 nm.Positron annihilation spectroscopy indicates that the maindefect in AlN crystals may be an aluminum vacancycomplexed with oxygen. This defect has an absorptionfeature in the blue that gives AlN crystals their usualorange/yellow color. But, it does not normally affect theUV absorption. Other impurities are likely to be responsiblefor the low energy cut off. This is confirmed, at least for

our growth, since increased pre-purification of the AlNsource powder leads to a shorter cut-off. Indeed with thecleanest source materials the cut-off is typically just 205 nm.

AlN ApplicationsAlN substrates have already been used for a wide varietyof devices. Excellent performance of RF structures grownon this platform has been reported; however, thesedevices are not expected to become commerciallyimportant until 4-inch diameter AlN becomes available.Using the SiC seeding process AlN could be scaled to 4-inch diameter in a rather straightforward manner. CrystalIS has reported deep UV LEDs on AlN and shown thatthick, fully strained pseudomorphic layers of AlGaN canbe grown on this foundation. Meanwhile, SAW deviceshave been made by a variety of groups on AlN. This givesgreat promise for AlN as a universal substrate for III-nitrides.

The quest to obtain a 2-inch diameter AlN substrate hasbeen pursued for many years. Our efforts have yieldedmaterial of this size with a dislocation density that is three-to-six orders of magnitude lower that that associated withepitaxy on sapphire. The many users of this substratehave obtained excellent epitaxial results, which arerealized without the need for special buffer layers. WhileAlN forms an unavoidable oxide layer, simple procedurescan remove any residual oxide.

Today the pricing of AlN is similar to that of SiC when itwas first commercialized. But AlN prices will drop assales increase. Substrates made from both these widebandgap materials should have similar production costs inyears to come. Since AlN is UV transparent, it may beusable in laser lift-off, although to date no publication ofsuch results has been made. This could reduce the costof AlN to that of repolishing, making it competitive withsapphire, GaAs and GaP, despite its greater initial cost.

Further readingJ. R. Grandusky et al, Applied Physics Express 3 072103 (2010)G. A. Slack et al. Mat. Res. Soc. Symp. Proc. 798 Y10.74.1US Patents 6,547,877 and 7,056,383F. Tuomisto et al. J. Cryst. Growth 310 3998 (2008)

Figure 7 AlNcharacterization


CS Europe � 2011 www.cseurope.net

What next for the CompoundSemiconductor Industry?CS Europe conference takes place on the 22nd March in the heart of Europe. Pioneeringcompanies from around the globe will give their take on the best opportunities for compoundsemiconductors, and what has to be done to seize these opportunities. If you want to learn from theinsight of these insiders, be sure to book your place at CS Europe. Your challenge is met bysomeone else’s solution and CS Europe aims to provide the platform that allows the CS communityto not just share ideas but develop solutions in manufacturing and furthering the reach ofCompound Semiconductor devices.

Dr. Petteri UusimaaPresident, Modulight

Topic: How to make a state-of-the-art visible red laser,what its specs are, and what new markets it cantarget

Prior to joining Modulight Dr Petteri held numerousmanager positions in international research projects inwhich he managed relations to international fundingcompanies as well as was the principal scientist in theprograms. Since 1997 Petteri has been managingsemiconductor sales to multinational companies andacted as a President & CEO of Modulight sinceincorporating the company in 2000. Dr. Petteri Uusimaahas a PhD in semiconductor physics from TampereUniversity of Technology (TUT).

Jan-Gustav Werthen, Ph.D.Senior Director, PhotovoltaicsJDSU

Topic: The urgency for the world to make power gridsdigital (smart grids) and photovoltaic developmentsfor electricity production from solar.

Jan-Gustav Werthen brings more than 26 years oftechnology experience to JDSU. As senior director ofPhotovoltaics, Jan drives overall business and productdevelopment that includes power-over-fiber products andsolar CPV cells. Jan joined JDSU in 2005 as part of the

Klaus H. PloogPioneer of Molecular Beam Epitaxy (MBE) KeynoteSpeaker

Topic: What next for the Compound SemiconductorIndustry?

Klaus H. Ploog is one of the pioneers of molecular beamepitaxy (MBE), a versatile tool to fabricate semiconductorand metal nanostructures. The MBE technique has beenestablished in the early1970s, i.e. long before the hype on“Nano“ started to dominate the word wide researchfunding policies in the late 1990s.

Using molecular beam epitaxy, he has designed andfabricated numerous new semiconductor and magneticnanostructures that showed unique quantum size effects.

These man-made nanostructures have led to a number ofnovel device concepts, including high-electronmobilitytransistors (HEMTs), quantum well and quantum dotlasers, quantum cascade lasers, etc.

His research achievements have been published in more than 1500 papers in international refereed journals,and he has received several prestigious awards. Hiscurrent interest for the subject of sustainable energyconcepts has emerged from his research on Group-IIINitrides for solid-state lighting beginning in 1995, wherehe has paved the way for more efficient blue, green andviolet GaN-based LEDs by using non-polar epitaxial layersand heterostructures.

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www.cseurope.net 2011 � CS Europe

acquisition of company that he founded called PhotonicPower Systems, Inc. From 1992 – 2005, Jan was CEO ofPhotonic Power Systems, where he built a semiconductordevice and subsystems organization from the ground upand grew sales over $1 million annually, addressingworldwide markets.

Prior to running his own company, Jan held managementpositions at companies such as VS Corporation, an earlyplayer in the fiber-to-the-home market, Varian Associates,and Xerox. Jan received his Ph.D. and M.S. in MaterialsScience and Engineering from Stanford University.

Jeff ShealyDivision Vice PresidentRFMD

Topic: Role of GaN RF Power Technology forTomorrow’s Commercial and Defense WirelessApplications

Jeff Shealy is vice president of the Infrastructure ProductLine at RFMD, where he is responsible for strategicplanning and execution of the corporate infrastructurestrategy. Dr. Shealy was a principle founder of RF NitroCommunications, Inc., where he served as president andCEO until RFMD acquired the company in October 2001.Dr. Shealy is a Howard Hughes Doctoral Fellow and hasheld positions at Hughes Research Labs and HughesNetwork Systems. He received his MBA from theBabcock School of Business at Wake Forest Universityand he holds a Ph.D. in electrical engineering from theUniversity of California at Santa Barbara. Dr. Shealy is amember of the IEEE Electron Device Society.

Dr Otto BergerCorporate Advanced Technology DirectorTriQuint Semiconductor, Inc

Topic: 3G/4G requirements for wireless systems andthe role GaAs and GaN devices will play in meetingthese requirements

Dr. Otto Berger is TriQuint’s Corporate AdvancedTechnology Director, overseeing the company’s portfolioof acoustic technologies, 150mm GaAs processdevelopments and advanced packaging techniques atTriQuint Munich, Germany. He leads innovationdevelopments in these fields to evolve TriQuint technologyfor future product generations. Dr. Berger began hisprofessional career at Siemens Semiconductor andmoved to TriQuint in 2002 through the acquisition ofInfineon’s GaAs business. He has worked in various rolesin process development, product engineering and fab

management within the GaAs field for more than 20years. Dr. Berger received his PhD degree in physics fromthe University of Muenster, Germany.

Marc RocchiCEO, OMMIC

Topic: What’s needed from GaAs and GaN fortomorrow’s wireless

Marc Rocchi received his degree in Electrical Engineeringand Solid State Physics from the Ecole Supérieured’Electricité de Paris in 1972 . In 1976 , he joined thePhilips Research Lab in France to work on the design ofhigh -speed digital GaAs circuits and in 1983 , he becamehead of the GaAs RFIC department. In 1988 , he moved toPhilips semiconductors in Eindhoven to lead the CMOSprocess and characterization group as part of the 1MbitSRAM project. Since 1990 he has successively beengeneral manager of Philips Microwave Limeil and CEO ofOMMIC . He is now Chairman of the board of directors ofOMMIC

Alexander BachmannMarketing EngineerOSRAM Opto Semiconductors GmbH

Topic: Recent Progress on Green InGaN Laser DiodeDevelopment at OSRAM Opto Semiconductors

After the studies in physics, Alexander Bachmann workedon the development of electrically pumped vertical-cavitysurface-emitting laser diodes at the Walter SchottkyInstitut of the Technical University of Munich. Emitting inthe near- to mid-infrared spectral region, these devicesare perfect light sources for trace gas sensingapplications. In 2010 he joined OSRAM OptoSemiconductors for the marketing of visible lasers for picoprojectors. With first products already being available onthe market, a huge market growth is expected for the nextyears, driving the development of blue and particularlygreen laser diodes.

Dr. Michael FiebigDirector Marketing and Business Development SolidState LightingOSRAM Opto Semiconductors GmbH

Topic: What are the success factors for thedeployment of Solid State Lighting?

Dr. Michael Fiebig gained his PhD in Physics at theUniversity of Hanover in 1998. During his doctoral thesishe worked on Diode-pumped solid-state-lasers in the

Klaus H. Ploog

Dr PetteriUusimaa

Jan-GustavWerthen, Ph.D

Jeff Shealy

Dr OttoBerger

Marc Rocchi


CS Europe � 2011 www.cseurope.net

Mats ReimarkCEO, TranSiC

Topic: How will SiC power devices help getting agreener planet

Mats Reimark has been a director in internationalorganizations for more than 10 years. He is, since May2009, CEO at TranSiC AB a company specializing indevelopment and manufacturing of bipolar transistors inSilicon Carbide. Prior to joining TranSiC Mats has had along career at GM with assignments such as DirectorHybrid Powertrain Engineering Europe, Chief EngineerTechnology at Fiat-GM Powertrain and Director Engineand Controls Engineering SAAB.

Dr. Philippe RousselProject manager Power Electronics and CompoundSemiconductorsYole Développement

Topic: GaN power electronics: Market forecasts andindustry status

Yole Développement (www.yole.fr) is a market researchand strategy consulting company based in Lyon, France.

Dr Philippe Roussel has headed the CompoundSemiconductors division since 1998. Yole producesnumerous market reports and is currently publishing theiranalysis of the SiC, GaN, AlN, Sapphire power and RFdevice as well as high-brightness LED marketsDr. Philippe ROUSSEL is graduated from the Universityof LYON in Electronics and Microelectronics. He wasgranted a Ph-D in Integrated Electronics Systems fromthe Applied Sciences National Institute (INSA) in LYON.

He is working at YOLE DEVELOPPEMENT since 1998and is leading the techno-economical market analysis inthe fields of Compound Semiconductors and PowerElectronics at materials, equipment and devices level.

Scott ParkerExecutive Vice President Sales and MarcomOclaro, Inc

Topic: Future Proofing Networks with 100 GigabitOptics

Mr. Parker was previously with Avanex Corporation, mostrecently serving as the Company’s Senior Vice Presidentof Sales. Prior to joining Avanex, Mr. Parker held seniormanagement positions at two start-up companies fundedby Sequoia Capital. Previously, Mr. Parker served asSenior Vice President of Sales and Marketing for JDS

spectral region at 2μm for medical applications. In 1998he joined Lambda Physics as Product Manager forExcimer Lasers for display and industrial applications.From 2001 he joined OOSRAM Opto Semicondutors andwas heading the Marketing segment for Consumer andCommunication until 2008. Since 2008 he is leading theMarketing and Business Development in the businesssegment Solid State Lighting at OSRAM OptoSemiconductors.

Dr. Markus BehetEurope Business Development ManagerDow Corning Compound Semiconductor

Topic: SiC Advances for Power Electronic Applications

Dr. Markus Behet received his PhD in ElectricalEngineering and Semiconductor Physics from theTechnical University Aachen in 1995. From 1995 - 1998he was R&D Manager for epitaxial growth and deviceprocessing of advanced III/V Semiconductors for HighFrequency and Infrared Laser applications at IMEC inLeuven/Belgium. In 1999 – 2002 he joined SiemensSemiconductor and later Infineon Technologies where hewas responsible for Business Development and Marketingof GaAs mmW products and foundry projects.

From 2002 - 2010 he held several Marketing and Salespositions for GaAs handset, foundry and mmW markets atTriQuint Semiconductor. In 2010 he joined Dow Corningas Development Manager for SiC based CompoundSemiconductor Solutions.

Dr. Ulf MeinersChief Technical Officer, UMS

Mark MurphyDirector Marketing, RF Power & Base, NXPTopic: High performance compound semiconductorsfor infrastructure, automotive and defenseapplications

Ulf Meiners received the Ph.D. in physics from theTechnische Universität Munich, Germany and has beenworking in the compound semiconductor domain sincemore than 20 years. He is the Chief Technical Officer ofthe UMS group and the Technical Managing Director ofUMS GmbH, Germany.

Mark Murphy received a BEng in Electrical andInformation Eng from Queens University Belfast and hasbeen working in the semiconductor industry for more than20 years. First at Analog Devices, followed by Philips & iscurrently at NXP where he is the Marketing Director forthe Product Line “RF Power & Base Stations".

AlexanderBachmann

Dr. MichaelFiebig

Mats Reimark

Dr MarkusBehet

Dr. Ulf Meiners

Mark Murphy


www.cseurope.net 2011 � CS Europe

Uniphase where he integrated the sales and customerservice teams from numerous acquisitions. He also heldsales and general manager positions at VLSI, NationalSemiconductor and Intel. Mr. Parker earned an M.B.A andbachelor’s degree in marketing from the University ofUtah.

Dr. Ertugrul SönmezBusiness Development MicroGaN GmbH

Topic: Efficient High-Voltage GaN Devices and ICs forNext Generation Power Management Solutions

Ertugrul received his Diplom-Ingenieur degrees inelectrical engineering from University of Ulm, in 1998. In1998, he joined the department of Electron Devices andCircuits as a member of the scientific staff, earning theDoktor-Ingenieur degree in 2007. His main fields ofresearch were compact silicon bipolar transistor modelingand analog RF MMIC design at 24GHz. He has authoredand co-authored more than 40 publications andconference contributions.

In March 2005, he joint ATMEL Germany GmbH inHeilbronn as Marketing Manager, to be responsible for theworld wide UWB RFID product line. In June 2005, hejoined TES Electronic Solutions GmbH in Stuttgart, aservice provider of ATMEL Germany GmbH. His mainactivities were to lead the ultra wide band MMIC design.

In December 2006, he has been called by MicroGaNGmbH as the strategic Business Developer to bring in hisexperience in semiconductors and markets.

Roy BluntSEMI International Compound Standards

Topic: Standardisation in compound

semiconductors - an essential step for furthering

the efficiency & profitability of the industry.

Roy Blunt graduated from Imperial College London in 1969 and joined Plessey Research Caswell Ltd., wherehe worked on a variety of R&D projects before becomingpart of the GaAs IC pilot production team and developinga particular interest in compound semiconductorcharacterisation techniques (metrology).

In 1988 he left Plessey to become part of the foundingteam of Epitaxial Products International Ltd in Cardiff -now IQE (Europe) Ltd.

He has been involved in standards work since the early1980s and was a co-founder and, for many years, co-

chairman of the SEMI European CompoundSemiconductor Technical Committee which has been veryactive in standards development both on its own and inco-ordination with the North American and JapaneseSEMI Compound Semiconductor committees.

Dr Mike CookeChief Technology OfficerOxford Instruments Plasma Technology

Topic: Batch and single wafer processing strategiesfor HBLEDs

Dr Mike Cooke joined Oxford Instruments PlasmaTechnology in 1992. As Chief Technology Officer, he leadsthe team of expert development technologists responsiblefor developments such as PEALD and scaling plasmatools towards 450mm.

Dr. Thomas UhrmannBusiness Development ManagerEV Group (EVG)

Topic: Engineered Substrates for future compoundsemiconductor devices

Thomas Uhrmann is Business Development Manager forCompound Semiconductors and Si-based Power Devicesat EV Group (EVG). In his current role, he is responsibleto introduce and manage technological innovations for thefabrication of high-brightness light emitting diodes (HB-LEDs) at EVG.

Uhrmann holds an engineering degree in mechatronicsfrom the University of Applied Sciences in Regensburgand a PhD in microelectronics from Vienna University ofTechnology. Uhrmann authored and co-authored severalpapers on semiconductor diode structures, micro ornanomagnetism and related areas.

Mike CzerniakProduct Marketing Manager, Exhaust Gas ManagementEdwards

Topic: GaN - meeting emissions regulations

Mike Czerniak received his PhD at Manchester University,and started as a scientist at Philips’ UK laboratoriesbefore moving to its fab in Nijmegen, working oncompound semiconductor applications. He was inmarketing at Cambridge Instruments and VG Semicon; heis now the product marketing manager of the Exhaust GasManagement Division of Edwards, Clevedon, NorthSomerset BS21 6TH, UK

Scott Parker

Dr. Mike Cooke

Dr. PhillipeRoussel

Dr. ErtugrulSönmez

Roy Blunt

Mike Czerniak

Dr. ThomasUhrmann


technology � materials

Liquid delivery system for high volumeNH3 usage in the proliferation of lowcost LEDsThe use of LEDs is already widespread in consumer electronics, appliances, and other products.Single LEDs are seemingly ubiquitous; LED assemblies are widely used in mobile electronics,computer displays, and televisions. We can expect that LEDs will spread through industrial lightingand into the general lighting of our homes. By Ryan Clement and Robin Gardiner, atMATHESON.

The growth has occurred quickly. The shift inmanufacturing scale, from niche production to high

volume /low unit cost processing, is well underway. Alongwith it, fabricators are engaging in a complete review of allaspects of the supply chain. At the focal point, naturally, isproduction process technology. Purchase a backlit TV,and the LED unit assembly can be 28% of the costs . Anestimated 25 million LED backlit TV’s will be built this yearwith as many as 500 LEDs per panel. It is expected thatthis application alone will have a growth rate of 10-15 %through to 2013/2014. Replace an old bulb today withLED technology and as much as 40% of the price youpay is cost of materials . With a potential of 100 billionadditional LEDs by 2020, manufacturers are eager forimprovements that impact their total cost by reducingproduction downtime, product variability, and waste.

Ammonia delivery and its pivotal role in the LED fabrication processAmmonia (NH3) is one of the primary gases used in highvolume for MOCVD growth of gallium nitride (GaN) filmsused to make LEDs. Consequently, NH3 is being used atincreased rates and in increased quantities that parallelthe rapid expansion of production.

At the outset, and until recently, cylinder-based deliverysystems were used to deliver NH3 to the GaN MOCVDreactors. Today, as the manufacturers have been addingreactors to keep up with LED demand, it has becomeclear that bulk NH3 supplies are required.

Weaknesses of conventional bulk deliveryConventional Bulk Specialty Gas System (BSGS) exhibitlimitations in three critical areas:1. Output flow rate is limited, which in turn limits thenumber of reactors that a BSGS can serve;2. The bulk liquid supply becomes increasinglycontaminated by water (and other impurities) as it is beingdepleted. This results in variable demands on externalpurification, and, more importantly, in a significant residualvolume of contaminated liquid ammonia that is belowspec and must be discarded.3. Safety and performance considerations involved withheating a large volume of NH3 grow more complicated asthe size of the BSGS vessel is increased.

Figure 1. Representation of the increasing watercontamination of NH3 gas output in standard bulksupply systems and LETV systems. Impurities areeasier to remedy when they are stable; LETV impuritylevel is essentially flat throughout the depletion of the bulk supply


materials � technology

These disadvantages are basic and severely limiting. Theneed for higher productivity in LED production is a real-world requirement. Overcoming any the limits of flow ratescalability, bulk material contamination, waste,performance, and safety would be a positive step.Overcoming them all would be a breakthrough.

A newer approach to bulk ammonia supply, LiquidExtraction and Total Vaporization (LETV) is thebreakthrough technology that overcomes all of theweaknesses of conventional BSGS systems. First, we willdescribe the detail of the BSGS limitations; after whichwe will provide a description of the LETV technology andits advantages.

Flow limitations in conventional bulk delivery systemsA conventional BSGS is comprised of a bulk containerand a gas piping system. Liquid NH3 vapourises withinthe bulk container and is piped to the point of use as agas. Limitations associated with heat control of the bulkcontainer (explained below) constrain the size of the bulkcontainer, and impose limitations on liquid ammoniasurface area – in turn limiting the flow capacity, andconstraining the scalability of the system.

So, even with a bulk delivery system in place, fabricatorswho continue to expand by the addition of multiple GaNreactors place consequent additional burdens on theirNH3 delivery systems, and face the need to deployadditional BSGS systems.

Impurity issues with BSGSThe mechanism employed in a conventional BSGS is, ineffect, a single plate distillation. As with all distillations,the composition of what remains inside the containerchanges over time. As the ammonia is consumed, theconcentration of impurities increases. Under processconditions, the overall composition of the bulk supply canchange to the extent that it no longer meets thespecifications required, and its use must be terminated.Depending upon process requirements and end-userSOP, the unusable supply can be as much as 20% of theoriginal volume; this is an obvious and immediate targetfor cost reduction.

Wasted supply is not the only problem. Water is acommon impurity for ammonia, and oxygen is the cause ofcritical defects related to LED brightness. As describedabove, as the NH3 is consumed, the concentration ofimpurities increases. Well before the point at which theammonia supply is rendered completely unusable, the driftin moisture contamination from the BSGS is a processvariable that impacts product quality (see Figure 1).

Removal of moisture and impurities from the exiting gas ispossible, but because the moisture and impurity contentchanges dynamically as the bulk supply is consumed,purification under these changing conditions represents achallenge to most purification systems. The resulting

inconsistency in the quality of the gaseous ammoniaoutput can lead to process and product variability.

Heating the bulk containerAn additional complication is that a conventional BSGSrequires that heat be applied to either to the entire bulkNH3 supply or to the liquid surface through microwavetechnology in order to induce vaporization and to maintainthe required flow rates.

The application of heat to ammonia presents controlproblems as well as safety risks. Heating any size vesselposes a control problem, because the amount of heatmust be continuously monitored and adjusted as thecontainer is emptied in order to maintain the delivered gasat a constant flow.

Larger vessels respond to temperature changes moreslowly, and are difficult to control with precision. Largervessels also pose a larger safety risk when electricheaters and microwave energy are present. Smallervessels reduce the control problem, but suffer the obviousdisadvantage of low capacity. Large or small, vessels ofany size present a temperature control problem.In the quest for capacity, there are practical limits to thesize of a bulk liquid NH3 container that can be efficientlyand safely heated.

Phase change dynamics and moistureNH3 has a high latent heat of vaporization and keepingthe phase change continuous and controlled in the face ofvarying demand from the process is non trivial. From a conventional BSGS the concentration of thewater impurities increases with exiting gas flow rate; itreaches a maximum; then declines. This behavior is aresult of the combined effects of thermodynamics, fluiddynamics and heat transfer. As smooth evaporationoccurs, an increase in moisture develops at the NH3liquid-vapor interface. Surface enrichment increases withan increased flow rate and therefore the moistureconcentration increases (see Figure 2).

Figure 2.Representationofcontaminationprofiles as a function ofgas output flowrate. Flow ratechanges are tobe expected ina real-worldproductionsetting –variablecontaminationas a function offlow rate is a real-worldproblem.


technology � materials

At a certain flow rate, boiling becomes vigorous enoughto disrupt and mix the liquid-vapor interface which startsto lower the surface enrichment of moisture. At high flowrate, a film boiling regime develops and heavy mixing isfound within the container. As a result, the surfaceenrichment is not capable of developing; and a lowermoisture level is observed. In the real-world setting of LED production, reactors andprocesses start and stop requiring on-the-fly changes indemand for gaseous NH3. Under this circumstance, levelsof moisture will always vary in the output flow ofconventional NH3 delivery systems - a result offundamental physical properties of NH3 with H2Ocontamination no matter what the purity.

In the final analysis, the instability and variability of thevaporization process in the typical BSGS presentsbarriers for the development of a repeatable, high volumeproduction process.

Liquid extraction and total vaporization (LETV)LETV technology circumvents the problems observed withgas phase delivery from a bulk supply. In a criticaldeparture from conventional BSGS technology, LETVtechnology isolates the storage vessel from thevaporization process. The design concept is to push liquidfrom a bulk container to an external vaporizer. In doing so,the system is able to achieve total vaporization of the NH3while maintaining constant temperature, pressure andtherefore flow.

The vaporizer is isolated from the bulk supply, thereforevaporization conditions are constant, and are easier tocontrol – and the process is, by definition, a safer one.

� The flow rate limitations of existing designs due to heatflux limitations are not present in the LETV. Everythingthat reaches the vaporizer is vaporized and there is no“concentration effect” on impurities in the bulkcontainer.

� The flow rate from a single LETV system vaporizer iseasily increased to support 50 GaN MOCVD reactorswith flow rates up to 5,000 slpm achievable byadjusting the heat flux.

� The LETV technology overcomes the problem ofmoisture impurity spikes and drift through the life of theentire bulk container and across a wide range of flows.

Because vaporization is isolated as a separate andcontrolled step, and because all of the liquid NH3 isvaporized and exits the system, the stability of moisturelevels in NH3 delivered by the LETV is better than 2%across a widely varied flow rate range, and throughout thedepletion life of the bulk supply.

LETV: No increase in water contaminationduring bulk supply depletionThe stability of moisture contamination in NH3 isrepresented in Figure 3. The moisture content wasconstant as the bulk vessel was depleted. There was no“concentration effect” of impurities as the supply wasconsumed. The standard deviation in the data was lessthan 1%.

Tests of the LETV technology have shown that thestandard deviation was less than 2% even when the flowrate was changed, and regardless of the liquid volume inthe bulk container. In fact, LETV is so effective throughoutthe depletion of the bulk container that the amount ofwasted bulk NH3 is limited only by the extent to which thebulk vessel and dip tube enable the emptying of the bulksupply.

LETV: Purity of gas supply from UHP liquidbulk supplyIn conventional BSGS designs the concentration of watercontamination will increase as the bulk supply isconsumed (to a point where the bulk supply becomesunusable). In an LETV system the purity of the gas outputis wholly dependent upon the purity of the bulk supply –and the impurity profiles of both the bulk liquid and thegas output remain essentially flat during use. MaintainingUHP performance from source to delivery is a highdemand on any liquid/gas delivery system.

For NH3 with 100 ppb moisture levels in liquid phase theeffect of the drying down of the tubing is important in the

Figure 4.Gaseous NH3purity extractingthen vaporizinga UHP liquidsource –changes in flowrate over timedo not impactpurity of output

Figure 3 –Output fromliquid deliverysystem andNH3 vaporizerat 250 slpm,showing nochange inmoistureconcentrationas the bulksupply isconsumed


materials � technology

effort to monitor the LETV performance at such low levelsof moisture. The results are given in Figure 4 and for flowrates of 50, 250, and 750 slpm show that the moisturecontamination levels can be expected to remain close toconstant across a wide range of flow rates, even with aUHP source.

Figure 4 clearly demonstrates that LETV technology iscapable of delivering gas phase ammonia with consistentmoisture content that is equivalent to the moistureimpurity level in the liquid phase supply. Notably, this wasdemonstrated even after abrupt changes in NH3 flow rate,mirroring “real world” conditions used by high volumeLED manufacturers.

SummaryConventional BSGS systems vaporize NH3 in the bulksupply container, and subsequently transfer the gaseousNH3 to the point of use. Systems of this design havelimitations in terms of impurity levels in the gas phasedelivery, constancy of impurity levels, capacity, maximum

flow rate, and safety. In such systems, watercontamination can be such a problem that as much as20% of the bulk supply is wasted.

Liquid Extraction and Total Vaporization (LETV) technologyisolates the storage vessel from the vaporization step. Thisenables better control of the vaporization process – evenat high flow rates.

LETV technology also removes the limitation on the size ofthe bulk container. At the same time, LETV technologyeliminates the “concentration effect” on impurities, whichvirtually eliminates waste. The amount of NH3 that can beremoved from the bulk container approaches 100% and islimited only by the bulk container design and the accessto the liquid phase contents.

LETV technology-based systems reduce capitalexpenditures by being scalable; can increase yields byeliminating variations in source gas; and reduce variablecosts by increasing material utilization.

Reference1http://www.displaysearch.com/cps/rde/xchg/displaysearch/hs.xsl/100216_led_backlight_costs_falling_faster_than_conventional_lcd_backlights.asp2http://green.venturebeat.com/2010/03/12/despite-advances-led-market-probably-volatile-for-two-more-years/3 http://www.ledsmagazine.com/news/7/2/184 Solid State Lighting II, Ian T. Ferguson, Nadarajah Narendran, Steven P. DenBaars, Yoon-Soo Park, Proceedings of SPIE Vol. 4776(2002)

Figure 5.Graphicrepresentationof LETVsystem,illustratingisolation of the vaporizerfrom the bulksupply


industry � LEDs

Getting readyfor a mature HB LEDindustry

The fast moving HB LED sector isstarting discussions to consider thekinds of consistent materialscharacterization, testing protocols,tool interoperability, or other commonpractices that typically enable a mature high volume industry,reports Paula Doe from SEMI.

Driven by rapid progress in technology, fastgrowth in display backlighting markets, and a

potentially huge market for general lighting about to come,the high brightness LED sector is hurtling towardsbecoming a more mature volume manufacturing industrywithin the next few years. Though companies will ofcourse maintain their unique core processes, the maturehigh volume manufacturing business will also requiresome changes, towards efficient supply chainmanagement, towards more automation and towards moreemphasis on tuning a controllable manufacturing processfor consistent high yields.

“The industry is maturing very fast, much faster than theIC industry did, as it can learn from that experience,” saysIain Black, Philips Lumileds VP of WorldwideManufacturing Engineering & Innovation. “This isbecoming a serious business. In the future we expect thatwith a smaller number of key players and a consolidatingsupply base, some of the custom variation will have tocome out of industry. That will require standards, and theywill need to be defined early enough to avoid delaying thedevelopment of the market, perhaps not in 2011, butcertainly sooner rather than later.”

Some industry leaders are gathering to start to discussthese issues at the first meeting of the newly formedSEMI North American HB LED Standards CommitteeNovember 11 in San Jose, California. The group is led by


LEDs � industry

early in the process as possible. But the process iscurrently hindered by everyone measuring different thingsin different ways.

To measure something as basic as wavelength uniformityon the wafer, for example, some LED makers useelectroluminescence tests, others use photoluminescencetests, some measure peak wavelength, and othersmeasure dominant wavelength — and all of those givedifferent results.

“If everyone could agree on one of those measures asbest practice, it would get everyone talking about thesame issues,” argues Veeco’s Quinn. “If everyonemeasured things the same way, it would be easier for theepi guys and the rest of the fab suppliers to improve theprocess for everyone. The potential to improve yields withstandard testing and feedback is huge. It’s definitely nottoo early to start talking about standards.”

“Every company’s fixturing is different, and will givedifferent results,” concurs Dan Morrow, president of Op-Test, citing the difference between probe tests andintegrating spheres, and multiple different set ups foreach. Morrow suggests that common testing protocols —like standards for thermal junction temperaturemanagement during production test — would give makersmore useful feedback for process control, and make specsheet data more useful and meaningful for both LEDmakers and their customers.

Morrow suggests the traditional transformed CIE XYphotometric measurements of what the eye sees, from thetraditional lighting industry, may not give precise enoughdata of what energies are at what wavelengths to driveyield improvements and guarantee that things that lookthe same really are the same. Spectral power distributionmay be the more useful data to improve the productionprocess. “Few are using process control feedback yet,but big players are coming into the market and I expectthat will bring big changes,” he adds.Wafer level test systems are still largely a custombusiness, points out Mark Cejer, Keithley Instrumentsdirector of marketing. He notes that the different degreesof precision in color uniformity needed even for edge-litversus back-array television backlights applications, to say

Black; Bill Quinn, chief technologist for MOCVD at VeecoInstruments; and Chris Moore, CEO of Semilab USA.SEMI invites participation from all interested parties.Parallel activities are expected to follow with committeesin Europe, Taiwan and Japan.

“I see standards as somewhat inevitable,” adds Black,noting that it won’t be realistic to keep using all bespokematerials. “So it’s important to be involved in the processto have some input. It’s time to get the conversationstarted around what might be possible.”

Finding common groundOne key area of common ground is the characterization ofincoming materials. This could begin with consistentmeasurement of purity for chemicals and benchmarks forLED grade materials like indium, gallium, metal hydrides,and packaging materials, which all differ a bit fromsupplier to supplier. This might not be too difficultbecause there are a limited number of suppliers.

Wafer standards are more challenging, with multipledifferent diameters and substrate materials in productionemploying radically different processes, so some arguethat even agreeing on a common thickness for 150 mmsapphire wafers is unlikely. But others counter that onethinner ~1 mm standard for those who thin the waferdown and prefer a thinner substrate, and another thicker~ 1.3 mm standard for those who remove the epi layerand prefer a thicker substrate, could probably handle mostproduction needs while doing away with much of theindividual customization.

Even a few more standard products would allow efficientsupply chain management, letting both wafer users andsuppliers stock products and buy and sell off the shelf,and to deal with multiple sources in times of shortage. Itwould also allow tool suppliers to improve processmeasurement and control. The timing could be good forthe fast transition about to come in substrate diameter.

Tool hardware specifications may be another area ofcommon ground, as susceptors, graphite and SiC fromdifferent vendors aren’t the same, and measurements ofconditions in the tool aren’t measured the same wayacross suppliers, so results can’t be compared.

Better binningMetrology and test is another key area for potential gainfrom consensus on best practice. As the HB LED sectormatures and moves from the realm of the developmentengineer to the manufacturing engineer it will begin tomove away from its current focus on volume. The focuswill shift to control of the established manufacturingprocess, and to greater attention to the operationalbenefits of yield, identifying and tracking yield issues as

“Standards need to focus on the leading edge,

6-inch wafers, 6-inch cassettes, and some sort

of wafer or carrier-level identification for

traceability as the basics to enable

automation”, Clint Harris, Brooks Automation

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LEDs � industry

nothing of automobile lights versus cell phone displays, allrequiring different tradeoffs of complexity and costs. SoLED makers tend to put together their own systems ofsource-measure units, probers, spectrometers andcustom software, or have a local systems integrator do so.To make it even more complex, companies are also goingto larger devices, or to multiple-device die cut from theoriginal wafer, which require higher voltages or currentsand shorter pulses for testing.

“We have to remain flexible to all these different ways ofdoing things because there are no established methodsfor test yet,” says Cejer. “But the relentless pricepressures will drive the industry towards efficiency, and ifwe put our heads together maybe we can do it efficiently.”

Going forward, one solution might be finding enoughcorrelation to characterize optical quality from only electricaltests, at least in some applications where the trade-offswere acceptable. Metrology and test are also easier forLED makers to talk about with suppliers. There is noadvantage in not being able to measure things, so no oneloses if a company works with a supplier to developtechnology to test things that can’t be tested now.

Materials, substrates, automation and metrology areusually the first areas to standardize as an industrymatures, says Semilab’s Chris Moore, noting theaccelerating speed with which some other sectors havemoved up to consistent volume manufacture. The solarindustry, which also differentiates on process IP, wasskeptical of manufacturing standards only a few yearsago. However, it has now embraced standards withamazing rapidity, compared to the slow and painfulprocess of the IC and LCD sectors before. Now twoyears in to starting standards discussions, there are some400 photovoltaic industry experts working to facilitateefficient volume manufacture. This team is starting bycoming to a consensus on the best measurementmethodology for purity and setting benchmarks to definePV grade materials, and agreeing on carrier andequipment interfaces to facilitate automation. Firstagreement on defining consistent characteristics of solargrade silicon was reached in only three meetings over oneyear. They’ve reached consensus on 12 standards so far,with another 6 expected to be published by the end of theyear, and more than a dozen more under development.

AutomationThough small wafers, cheap labor and long batchprocesses have limited the need for automation so far, theLED industry is transitioning to more and more automationas it moves to larger wafers and higher volumes. Roboticwafer handling, automated glove boxes, interbayautomation, mini-environments and standardized carrierssuch as SMIFS are all technologies that will becomepervasive in LED fabs of the future, argues Clint Haris,Senior Vice President of the Systems Solution group atBrooks Automation. He points out that LED makers arestarting to look towards automation to improve yields andtraceability. “The industry is rapidly evolving from manual

operation to fully automated factories,” he says, notingthat the LED industry has seen change in the last fiveyears that took 40 years in the semiconductor industry. “Things are moving so quickly, standards need to focus onthe leading edge, 6-inch wafers, 6-inch cassettes, andsome sort of wafer or carrier-level identification fortraceability as the basics to enable automation.”

“Automation always increases yield,” points out Quinn,noting that Veeco has found that when its experiencedtechnicians instead of its interns load the tools, yields areimproved by as much as 50 percent. Automation also mayenable a faster ramp to volume than finding or developingall the qualified operators and engineers to run all the newepi reactors now out in the field. Though HB LEDmanufacturing is unlikely to move to the expensive fullautomated materials handling required for the heavycassettes of 300 mm semiconductor wafers, it is likely tomove towards the semiconductor automation of the 200mm generation of the 1990s.

Automating data collection, analysis and even correctionwill also be key to getting more die into the bins that bringhigh margins, notes Applied Materials’ Phil Walker, globalproduct manager for automation products. “We need toget the data out of the tool and metrology, and linked tothe right wafer to be able improve bin yields,” he says,pointing to the potential for tracking the parameters of theproduction process, mining the data for the root cause ofdefects, and making needed adjustments to the tool assoon as possible.

“We also need the software to compare tools and tunethem to match those that provide the best performance,”he added. “The first step to unlocking hidden performanceis collecting the data and understanding it.”

HB LEDs production is fast transitioning to larger wafer diameters, moving tomass adoption of 4-inch (actually 100 mm) wafers next year, and to 6-inch (150mm) within a few years, as the better use of reactor carrier real estate andreduced edge losses can increase throughput by as much as 30 percent, andallow use of the other semiconductor equipment available at 6-inch. Source: Yole Développement Sapphire Market 2010 Q4 Update


LED manufacturing � technology

Manufacturing photonic LEDs with photolithographyDue to a very small depth of focus, standard photolithography techniques haveinsufficient fidelity for defining photonic crystal structures on LED epiwafers. But high-quality, large-scale patterning is possible by turning to a novel self-imagingphotolithography technique, say Harun Solak, Christian Dais and Francis Clube fromEulitha.

The introduction of light extraction techniques hasspurred an increase in GaN LED efficiency. That’s

because this type of technology can prevent a highproportion of light being trapped and eventually absorbedin the high refractive index semiconductor layers whereemission is generated.

One of the most effective light extraction technologiesinvolves etching regular arrays of holes into the emittingsurface. Such photonic crystal structures cut theproportion of light propagating within the guided modesof the high index dielectric layer, and channel moreemission out of the structure. Indeed, some of the highestperforming devices have been created in this way byresearchers at manufacturers such as Philips Lumiledsand Osram. In addition, there are highly successfulcommercial products employing this concept, such as theseries of Phlatlight LEDs from Luminus Devices.

There are many different ways to incorporate photoniccrystal structures into LEDs. Arguably the moststraightforward is the etching of a hole structure into thetop layer, leaving air holes that can extend into the activeregion. Other approaches include incorporating a lowerindex dielectric - such as silicon dioxide - as pillars inGaN, or patterning the substrate with a photonic crystalstructure.

Adding a photonic crystal pattern influences lightemission in two ways: overall extraction increases by afactor of two-to-three; and the emission profile changes,becoming more concentrated around the surface normal.This enhanced directionality of the emission results in abrighter LED, which is especially important for applicationswhere the light needs to be further guided, collimated orfocused. Through careful design of the photonic crystalstructure it is possible to tailor the LED’s emission pattern tothe target application. Electromagnetic simulation codesare one tool for realizing this. They can determine the effectof parameters such as the period or lattice symmetry.

An alternative, popular practice within the industry forboosting efficiency is roughening or texturing of the LEDsurface. This introduces facets at different angles, makingit easier for light to escape from the chip. One downsideof this approach is that it offers no gain or control over thedirectionality of the emitted light. What’s more, by turningto an optimized and highly controlled photonic crystalpattern instead of a textured surface, it may be possible toincrease the process and emission reproducibility acrosschips and wafers, leading to higher production yields.

Despite the research programs being undertaken by majormanufacturers and their published results, the applicationof photonic crystals to LEDs has not yet been adopted

Photographs ofa 600 nmperiodhexagonalpattern on a 2-inch wafer


technology � LED manufacturing

extensively by this industry. That’s primarily because thisapproach is believed to add substantial complexity andcost to the lithographic process required for the fabrication.

Printing versus opticsPhotonic crystals designed for light extraction from GaN-based LEDs typically have a lattice period of 300-600 nm.The lattice symmetry is usually hexagonal, although othergeometries such as square grids are also considered. Inorder to realize such patterns, holes as small as 100 nm indiameter need to be printed on LED wafers. This rules outproximity (or contact) photolithography, which has aminimum resolution of about 500 nm. And features of thissize are only possible in contact mode, where damage tothe mask and process yield are both serious issues.

Another optical method is holographic lithography, whichinvolves interfering of two or more mutually coherentbeams to obtain periodic structures. Resolution is not anissue for this UV method, but it is unsuitable for high volumeproduction processes because the optical configurationhas to be modified to realize different patterns. In addition,this approach requires a strict control of the environmentto maintain stable fringe patterns.

Nanoimprint lithography (NIL) has been proposed as asuitable technique for high-volume manufacture of

photonic LEDs because it promises to combine sufficientresolution with high throughput. Some manufacturers haveindeed adopted this technique, and all main Nanoimprinttool providers now advertise equipment specially targetingthis application. However, the NIL approach facesconsiderable challenges: process difficulty, cost andthroughput. These difficulties are partly caused by thenon-flatness of LED wafers and the particulatecontamination commonly found on their surfaces. Thereare ways to circumvent this problem, but they add toprocess complexity, which ultimately increases cost.Meanwhile, deep UV lithography, as used by the ICindustry, is not considered to be a viable option due to itsprohibitively high cost. In addition, there are depth-of-focus problems associated with printing high-resolutionpatterns onto non-flat LED wafers.

Staying focusedAt Eulitha, a start-up founded in 2006 in the cantonAargau of Switzerland, we have developed a proprietarytechnology to address this important manufacturingroadblock. Our technology that is known as PHABLE - ashortening of “photonics enabler” - is a mask-basedphotolithographic technology that takes full advantage ofstandard photolithography infrastructure such asphotoresists and associated processes. It enables fabricationof periodic structures required for photonic applications,such as arrays of holes arranged on hexagonal or squarelattices, or linear gratings with sub-100 nm resolution. Theunique property of PHABLE is that it forms an opticalimage with a very large depth of focus (DOF), whichmeans that it is not a problem to print high-resolutionpatterns onto non-flat surfaces, such as LED wafers.

Self-imaging of gratings (or the Talbot effect) is a well-known phenomenon where a mask with a periodicstructure (grating) is illuminated with monochromaticcollimated light to form images of the grating at periodicdistances after it. These so-called self-images have a DOFthat scales with the square of the pattern period. A typicalDOF value for a pattern period of 400 nm, illuminatedwith 365 nm light, is 50 nm. This value is so small that it

Figure 1 (a) Calculated image produced by a linear diffraction grating illuminated with monochromatic collimated light. The dashedlines show two of the self-image planes. (b) Diagram illustrating the PHABLE concept. (c) Resultant image obtained with theinnovative method showing the invariance along the longitudinal direction and hence elimination of the DOF limitation faced inconventional photolithography

Figure 2 SEM images of photonic patterns with hexagonal symmetry. (Bottom left) Pattern in photoresist with 500 nm pitch. (Right) and (Topleft) Top-down and cross-section images of 600 nm-period hexagonal holearray etched to a depth of about 800 nm in silicon


LED manufacturing � technology

prevents use of non-flat substrates or sufficiently thickphotoresists, and requires very precise positioning andalignment of the wafer with respect to the mask. Whilethere have been many demonstrations and researchstudies, up until now the limited DOF has preventedapplication of this method in industrial fabrication,especially for high-resolution structures. The PHABLEtechnology promises to lift this restriction.

In order to explain the principle behind this newtechnology, we show the intensity distribution and self-image planes formed behind a linear grating in Figure 1a.According to the conventional method, the photoresist-coated substrate is precisely positioned at one of theseself-image planes to record the pattern which has a DOFsmaller than p2/2λ, where p is the pattern period and λ isthe wavelength. In the PHABLE method the wafer is notkept stationary at a self-image plane. Instead, it is movedtoward the wafer by a full Talbot period (p2/2λ) to recordan integral or average image (Figure 1b).

The resultant image is shown in Figure 1c. This image isalso periodic along the lateral direction but, interestingly,is not sensitive to the starting distance of the wafer fromthe mask. Therefore the image has effectively no DOFlimitation. A further advantage is that the printed patternhas half the period of the grating in the mask, therefore aresolution gain is achieved with respect to the mask.

To ensure a reliable and reproducible lithographicprocess, the contrast of the aerial image has to be highenough so that the non-linear response of a photoresistconverts the image into a binary pattern. An inspection ofthe calculated image in Figure 1c reveals a peak-to-valleyintensity ratio of about three – this is ample contrast forphotoresist exposure. In general, simulations show thatimages obtained with this method have high contrast, whichis supported by the experimental results presented below.

Any pattern you likeThis principle illustrated in Figure 1 is applicable to bothone-dimensional patterns, such as lines and spaces, andtwo-dimensional patterns, such as hexagonal or squarelattices. Examples of patterns printed using this methodare shown in Figure 2. A hexagonal pattern of holes with500 nm period printed in photoresist is seen in Figure 2a,and top-down and cross-section images of a hexagonalarray of holes with 600 nm period etched in a siliconwafer are shown in Figures 2b and 2c, respectively.Exposures were performed with a PHABLE tool usingcollimated UV light and a standard photoresist. In each casethe wafer was displaced over one Talbot period duringexposure to print large-area patterns over 2-inch wafers.

Evaluation of the printed structures showed that gooduniformity and reproducibility were obtained despite anuneven gap and large resist thickness, proving that thepattern is indeed insensitive to the distance between themask and the wafer. The large gap between the mask andthe wafer ensures a practically unlimited lifetime for themasks.

Since PHABLE is a mask-based photolithography method,printing a different pattern simply requires a change ofmask. What’s more, many different patterns can besimultaneously printed on a single chip or a wafer in muchthe same way as different circuits are printed on siliconwafers. The limiting resolution of the printed featuresdepends on the wavelength of the light used, with thesmallest period being close to half the wavelength.

PHABLE is ideally suited for patterning LED wafersbecause of its non-contact nature and ability to print overlarge topographical features and on non-flat surfaces.Photonic nanostructures can be created on LED surfacesafter epitaxial deposition steps or on sapphire substratesbefore the device layers are grown. Relatively thickstandard photoresists can be used, such as those with athickness of 0.5-1.0 μm. This enables etching intosemiconductor layers without the added complexity orcost of hard masks, such as SiO2. Photonic crystalpatterns with various different periods, orientations orsymmetries can be incorporated on individual chips toeffectively tailor and control the distribution of lightemission. The high reproducibility and uniformity of thelithographically produced patterns can improve yield andreduce the costs associated with binning products withlarge performance variations.

Other emerging technologies also stand to benefit fromthis innovative photonic patterning technology. Forexample, lithographic patterning for nanowire-based LEDsand photovoltaic devices can be accomplished withPHABLE. Heteroepitaxy on patterned silicon substratesand epitaxial lateral overgrowth for Blu-ray laserproduction are other potential applications. Wire-gridpolarizers needed in both LCD displays and projectors areother areas where this technology can make a strong impact.

The PHABLE technology enables low-cost fabrication ofphotonic patterns. The time-tested approach of a mask-based UV exposure and its associated infrastructure willensure a smooth adoption of this approach. In particular,there is no requirement to invent or develop newmaterials. Standard photoresists with optimized resolutionand etch properties are available from multiple vendors.The infrastructure for mask fabrication is also already inplace. This means that the HB-LED and other industriescan rely on the usual, well-established sources for therequired consumables and a low-cost process for realizingtheir photonic nanostructures.

We are now offering samples and wafer batch processingservices to companies and researchers developingnanostructure-based products, who are interested intaking advantage of this breakthrough technology. We arealso currently offering laboratory lithography tools for 2-inch to 4-inch wafers that are suitable for productdevelopment. High-volume production tools withthroughput in excess of 100 wafer-per-hour will be madeavailable to manufacturers in the near future. Many futurephotonic devices will shine even brighter with theintroduction of our proprietary technology.

Furtherreading

Jonathan J.Wierer et al,NaturePhotonics,(2009)K Bergenek etal, IEEE J. ofQuantumElectronics,(2009)F. Rahman,Optics andPhotonicsNews, (2009)


industry � LED manufacturing

Turning 6-inch GaN LEDmanufacturing into reality

Substantial reductions in chipproduction costs will spur theuptake of LED-based solid-state lighting. One way to dothis is to start to manufacturethese emitters with multi-wafer6-inch tools that set a newbenchmark for reproducibility,argues Aixtron’s RainerBeccard.


LED manufacturing � industry

The LED business is booming. These chips aregenerating attractive cash flows from backlighting

the screens of netbooks, lap tops and TVs and this solid-state device is about to break into lucrative new territory:general illumination. The leading LED manufacturers havehad their eyes firmly fixed on this goal for many years andtheir dream is now turning into reality, thanks to therelease of the first commercial lighting products.

At Aixtron, which is based in Aachen, Germany, we have astrong track record in supporting the tremendousprogress of LED manufacturers. Our effort has focusedon continuous improvement in the throughput of MOCVDreactors, echoing the developments of other toolmakers inthe silicon industry.

Our first design of MOCVD reactor for growing GaN-based LED epistructures accommodated 2-inchsubstrates, and over the years we have unveiled reactorsthat can house more wafers with larger diameters. Thiseffort has culminated in our release of the future-proofAixtron AIX G5 HT earlier this year. This tool offerssimultaneous deposition of GaN and its related alloys oneight 6-inch wafers, the size that many LED chipmakerswill look to migrate to over the next few years. In addition,this reactor can be configured for the growth of multiple8-inch wafers.

The economies of scale realized by changing to a 6-inchprocess are obvious: better utilization of the MOCVDreactor area; less edge exclusion; more efficient handling;and better precursor utilization in the epitaxial process.However, it is not possible to produce high-quality, 6-inchLED epiwafers by simply taking established processesand applying them to these larger wafers. That’s becausesuch large wafers create their own challenges due to theirsize, weight, and thickness, and the entire MOCVDenvironment has to be designed to suit them. In addition,the MOCVD tool must be capable of high yields and fastcycle times, as otherwise this would negate theproductivity advantage gained by the migration to largewafers.

We considered these issues when we defined ourrequirements for our 6-inch MOCVD tool. We decidedthat the reactor must be capable of producing epiwaferswith uniformity high enough to translate to an overall gainin yield over previous generations of MOCVD tools. Forthe same reason, we had to build a reactor that set a newbenchmark for wafer-to-wafer, run-to-run and tool-to-toolreproducibility.

To maximize throughput, our reactor would have tooperate without cleaning and baking between growthruns. In addition, we set out to build a tool that requiredvery little preventative maintenance, generated very few particles, and was highly automated. For example, customers had to have the option of buying a version of this tool with automatic loading and unloading.

Our flagship reactor, the AIX G5 HT, fulfils all these goalsby realizing stable, reproducible and uniform growthprocesses on wafers up to 8-inch in diameter (see Figure 1). While designing this reactor, we paid carefulconsideration to the two fundamental aspects thatdetermine the capabilities and performance of anyMOCVD reactor: the thermal conditions; and the gas flowdynamics and chemical reactions, in both the gas phaseand the solid phase.

Minimizing temperature variationsThe AIX G5 HT features a novel type of gas injector thatintroduces perfectly laminar gas flows into the reactor.This condition can be realized at high growth pressures(close to atmospheric pressure) and growth rates of up to 30 μm/hr. Thanks to this approach, uniform gasphase depletion occurs for all wafer sizes.

One pre-requisite for the growth of high-quality epiwafersis excellent temperature uniformity across the wafer —deviations must be less than 1 °C. This must be realizedfor both the low temperatures associated with multi-quantum well (MQW) growth, and the far highertemperatures employed for growth of the other regions ofthe LED.

To realize the excellent temperature uniformity that holdsthe key to uniform film deposition, we employ ourproprietary Planetary Reactor design that features on allof our multi-wafer tools. The satellite disks that hold thewafers rotate individually on a rotating planet disk, whichis heated by an RF coil. For large wafer sizes such as 6-inch, this principle leads to an inherent advantage forthe subsequent backend process. This stems from thehigh degree of rotational symmetry associated with thetemperature distribution on the satellite, and the waferthat it supports.

To improve reactor performance even further, we haveoptimized the design of the RF coil and the satellite disk.Thanks to this, our tool delivers unprecedented levels ofuniformity on 6-inch wafers.


industry � LED manufacturing

Unfortunately, complete absence of temperature variationson the satellite disk is no guarantee of highly uniform filmdeposition. That’s because there are differences in thelattice constants and thermal expansion coefficients of thesapphire substrate and the nitride-based LEDheterostructure. Strain that results affects all wafers,although the bowing that it causes gets more pronouncedas wafer size increases.

Needless to say, bowing is an impediment to uniform LEDproperties. To prevent this, it is possible to deposit theepiwafers on thick sapphire substrates (above 1 mm),employ in situ curvature measurements to monitor andcorrect for bow, and last but not least, insert special layerstacks into the LED heterostructure that minimizes bow.Armed with these techniques, it is possible to realize

excellent photoluminescence uniformities using the 8 x 6-inch configuration of the G5 reactor.

This high level of uniformity leads to great yield figures.Based on the above uniformity data, an exact calculationof the area yield shows that more than 98 percent of thewafer area is in a 5 nm bin.

A worthwhile analysis of yield must not be restricted to asingle wafer – it must consider wafer-to-wafer uniformityand reproducibility. To deliver on both these fronts, wehave devoted substantial effort to optimizing the design ofthe reactor and the materials that it is built from. On top ofthis, we have made further gains by controlling thetemperature of each individual wafer.

To realize individual temperature control, the temperaturefrom the top of each satellite is measured with apyrometric device. The gas flow of the gas-foil rotationdrive of each satellite is then adjusted accordingly,bringing the temperature of the wafer back to its desiredvalue.

Keep on runningReproducibility is a key issue in high volumemanufacturing environments employing many identicalMOCVD tools running standardized growth recipes. Ifhigh yields are to be realized day-in, day-out, then everyreactor must deliver exactly the same performance andresults from one run to the next without any re-calibration.

We have analyzed the root causes of non-stability invarious MOCVD systems and determined that they arepredominantly related to small temperature drifts in thereactor set-up. Consequently, with our G5 reactor wehave strived for a design with inherent temperaturestability. One of the key features of this particular reactoris its novel graphite ceiling plate. In the Planetary Reactordesigns, the ceiling plate defines the upper thermalboundary of the reactor. Even though it is not activelyheated, it does influence the reactor’s thermalmanagement.

The great strength of the new graphite ceiling is that itsemissivity is unaffected by the deposition of materials ontoits surface. This means that the thermal properties of thereactor are fixed, rather than depending of the number ofgrowth runs already performed. This results inunprecedented reproducibility of all LED properties, fromrun to run and between different reactors.

Another route to increasing productivity of an MOCVDsystem is to reduce its cycle times. The G5 reactor excelsin this regard. Not only does it enable very high growthrates that cut material deposition times — it also has very

Figure 1.Aixtron G5 HTPlanetaryReactor in 56 x 2-inchconfiguration(above). Topview of thisreactor in 8 x 6-inchconfiguration(right). The toolcan also beconfigured for4-inch and 8-inch wafers

In more quantitative terms, the throughput of the AIX G5 HT is more than double

that of the previous MOCVD tool generation, thanks to the combination of

larger capacity, large wafers and shorter cycle time


LED manufacturing � industry

short times associated with the non-growth processesthat form part of the production run.

These gains stem predominantly from the introduction ofthe graphite ceiling. As noted before, this ceiling platedoes not have to be frequently exchanged to ensurethermal stability, because there is absolutely no thermaldrift. What’s more, the process conditions used for theceiling mean that any deposits create a very solid film.This is stable, does not peel off and never generatesparticles, so there is no need whatsoever to exchange orclean the ceiling between LED growth runs. Additionally,there is no need for in situ bakes, conditioning runs, orexchange of any reactor parts.

The upshot of all of this is that growth runs can beperformed continuously, without interruption. This slashes“downtime” associated with cleaning and maintenance. Inmore quantitative terms, the throughput of the AIX G5 HTis more than double that of the previous MOCVD toolgeneration, thanks to the combination of larger capacity,large wafers and shorter cycle time.

Avoiding human contactThe features associated with the G5 will appeal to manyof the bigger LED manufacturers, including those having ahistory in the silicon or display business environment.Many of these firms will lead the transition from smallwafer sizes to 6-inch wafers, and are likely to viewautomation as a pre-requisite for unlocking the fullpotential of large substrates.

From a yield point of view, manual wafer handling carriesan inherent risk of error. Over time this diminishes yield,with larger wafers leading to bigger losses than smallerones. Consequently, the advantages associated withautomation for manufacturing on 6-inch wafers heavilyoutweigh any downsides, especially once the cut in thenon-productive cycle time of the MOCVD tool isaccounted for.

Our incorporation of automation on the G5 tool has beenrealized without making any compromise to theperformance of the MOCVD reactor or its processes. Thetransfer module, which provides automated loading, isvery reliable and simple to use. A robotic systemaccesses the reactor through a gate valve, picks up asatellite disk together with the wafer, and then replaces it

with another satellite disk housing a fresh substrate. Itonly takes a few minutes to exchange a complete reactorload, a process that is performed after only a shortcooling phase (hot load capability). The satellites housingthe epiwafers are taken away and unloaded and reloadedwhile the G5 starts its next MOCVD growth run.

It is possible to operate a single G5 reactor with atransfer system. However, to cut overall capitalexpenditure and save space, if an LED chipmaker hasseveral of these MOCVD units, they can share transfersystems.

The light aheadOver the next few years there will be major changes inLED manufacturing. The emergence of solid-state lightingwill encourage many leading LED chipmakers to increaseproduction capacity, and prompt heavyweights in otherindustries to enter this sector. This will lead to bigger LEDfabs, which will start to resemble the silicon foundries.

These bigger fabs will focus efforts on rapidly improvingthroughput and productivity, which will include theintroduction of 6-inch LED processes. Sapphiresubstrates of that size are already available, and arecomplemented by the latest MOCVD tools, such as ourAIX G5 HT. Whether this is configured as an automatedtool or as an MOCVD cluster tool, it will easily meet theforeseeable throughput, cost, performance and yieldrequirements of the coming years.

Figure 2.Photoluminescencemap of a typical LED multi-quantum well.Standard deviationacross the entire 6-inch wafer (no edge-exclusion) is0.9 nm


technology � LEDs

GaN-based LEDs have made tremendousprogress in the last decade. In particular,

the high-brightness, phosphor-coated white variety hascome on in leaps and bounds, and it is now starting topenetrate solid-state lighting. In this market it offers a farmore efficient alternative to the incandescent bulbs thatare being phased out in many countries throughgovernment legislation, and it does not employ the toxicmaterials used in compact fluorescent bulbs.

However, light generated by phosphor-coated LEDs is farfrom perfect. Its color-rendering index is inferior to that ofa compact fluorescent, there are production yield issues,

and the phosphor coating tends to degrade with usage,leading to unwanted changes in the spectral output of thislighting source.

Shifts in emission profile are a major impediment to thedeployment of LEDs for in-door ambient lighting andhorticultural lighting for eco-conscious greenhouse andindoor growers. To mimic sunlight and enable plants toperform photosynthesis, it is essential for horticulturelighting to have dominant peak wavelengths at 430-460 nm and 650-700 nm, the spectral ranges whereChlorophyll-A and B have the highest responsivity. Ifstrong emission can be produced at these wavelengths,

Dots deliver beautiful whitesAn ensemble of spatially distributed III-nitride quantum dots can producethe broad, visible emission that is desirable for ambient lighting and thegrowth of crops, says Soh Chew Beng, Chua Soo Jin and Liu Wei fromthe Singapore Institute of Materials Research and Engineering.


LEDs � technology

LEDs can then tap into the horticultural lighting marketthat currently uses sources such as the HID lamp, whichhas low conversion efficiency and only outputs a smallproportion of its emission spectrum in the ranges usefulfor photosynthesis.

At Singapore Institute of Materials Research andEngineering – which is a member of the Agency forScience, Technology and Research (A*STAR) – we aredeveloping light sources for horticultural and ambientlighting. These feature a long broad spectrum in theyellow to red regime, plus a narrow blue emission peak.

To produce this form of emission, we have developed anovel technique for incorporating quantum dots (QDs)into LEDs that can tune their emission spectrum. TheseQDs, which are embedded in the multiple quantum wellsof an LED, are clearly visible in transmission electronmicroscopy images. They produce an internal quantumefficiency of 40 percent, according to photoluminescencemeasurements at 4K and 300K with an excitation sourceat 325 nm (Figure 1).

Ambient sourcesIncorporation of quantum dots into the active layers ofdevices yields two major advantages over theconventional InGaN well: It increases the recombinationefficiency of the emitting layer, thanks to the strongexciton binding energy and large band-offsets; and itreduces the electroluminescence shift due to superiorcarrier confinement in three dimensional space.

While many researchers have turned to QDs to make anarrow linewidth source, we have taken an entirelydifferent tack, using them to create a broad emissionspectrum that covers 450 - 750 nm and mimics daylight.To make such a source requires the fabrication of dotswith a broad range of sizes, which we realize by variationsin growth temperature and trimethylgallium flow (seeFigure 2).

Our white LED is based on dual-stacked InGaN/GaNmultiple quantum wells with QDs embedded in one of the

multi-quantum wells. The lower part of the structurecomprises long-wavelength-emitting, indium-rich QDsincorporated in quantum wells and the upper set featurescyan-green emitting multiple quantum wells. Bycontrolling growth temperature and the precursor flows,we can realize LEDs with many different shades of white.

LED performance has been evaluated with current-voltageand electroluminescence tests. These measurementsrevealed that there is minimal change in the LED emissionpeak as injection current increases from 100 mA to280 mA – it shifts by just 5 nm. This suggests that thepiezoelectric field effect does not have a major influenceon the enerfgy levels of QDs embedded in quantum wells.

Figure 1 (Far left) Temperature varying PL spectra for MQWs B; with embedded quantum dots on nano-ELO GaN substrate (Left) Cross-section TEM images showing the quantum dots incorporation in InGaN/GaN quantum wells. (Right) Low temperaturePL spectra of the InGaN/GaN multiple quantum wells at 10K; MQWs A and B on GaN and nano-ELO GaN template with indium richnanostructures incorporation in InGaN/GaN MQWs. (Far right) Arrhenius plot for determination of activation energy of MQWs

Figure 2 (Top left) TEM images of the dual stacked MQWs in quantumdots incorporating white LEDs. (Top right) Sample structures of the LEDs.(Bottom left) Electroluminscence spectra of a packaged warm white LEDs(Bottom right) I-V curve of the LEDs


technology � LEDs

Graphing light output as a function of injection currentshows that droop is more prevalent in conventional LEDsthan it is in our novel emitters. This characteristic makesour QD-based LEDs attractive candidates for high-powerdevice applications.

LEDs for horticultureStudies have shown that ultraviolet and far red radiation isbetter for driving photosynthesis than green emission.Against the backdrop of efforts to reduce carbon dioxidefootprints, greenhouse growers are exploring differentcombination of lighting for effective vegetation andflowering during different stages of the plant’s growthcycles.

However, the different type of materials used for growth ofUV LEDs (III-nitrides) and red LEDs (III-arsenides) willpose a reliability issue for LED lighting units forhorticulture. What’s more, the integrated

electroluminescence spectrum tends to deviate from itsoptimum profile after a period of use.

We believe that our novel LEDs that incorporate QDs canaddress these issues. Our red-emitting versions — whichhave dominant emission peak at 652 nm with a full-widthhalf maximum of 200 meV — display minimal shift inwavelength with increasing injection current and cancover the longer wavelength (far red) emission required byplants for photosynthesis. Combining this output with theviolet/blue emission from conventional InGaN/GaN LEDsenables the production of a lighting source that coversthe whole photosynthetic response of plants.

Despite the favorable characteristic and properties ofQDs, this system has its limitation. When these dots areincorporated into LEDs they tend to suffer from out-diffusion into the surrounding matrix of InGaN wells andGaN barriers during the growth of high temperature p-type GaN and chamber annealing for magnesium activation.

We have investigated the extent of this degradation andfound that it is possible to prevent out-diffusion bycapping the structure with an AlN layer. This is possiblethanks to the low mobility of AlN adatoms on the filmsurface at a low growth temperature of typically 780 °Cand formation of stable Al-N bonds. Aluminum alsopossesses a lower vapor pressure than indium, whicheffectively reduces the diffusion length of subsequentindium deposited on the first quantum well layer. In turn,this increases the quantum dot density at the secondquantum wells.

Another benefit of the addition of a stable thin AlNencapsulation layer is a reduction of piezoelectricpolarization charge accumulation at the interface to thecompressively strained InGaN well. This lowers the blueshift of emission wavelength with injection current.

Getting the light outTo improve the efficiency of LEDs and maximize theirenergy saving potential, chip manufacturers andresearchers are looking into ways to resolve efficiencydroop and improve light extraction. We are going downthis road too, and have developed the cheap patterningtechnique using nanosphere lithography. This involvespolystyrene nanospheres, anodized alumina oxide and UV-enhanced electrochemical etching to generatenanoporous GaN.

Our phosphor-free, apple-white LEDs unite a dual stack ofInGaN/GaN multiple quantum wells. The lower setcontains long-wavelength-emitting, indium-richnanostructures incorporated in quantum wells, and theupper set comprises cyan-green emitting multiplequantum wells. The LEDs were grown on a nano-epitaxially lateral overgrown (nano-ELO) GaN template,

Figure 3 (Top left) Electroluminescence of quantum dot incorporated redLEDs (Top right) The relative quantum efficiency curves as determined bythe average plants response for photosynthesis. The red box shows thequantum (PPF) response when all photons are weighted equally between400 nm to 700 nm. PPF overestimate the photosynthetic value of photonsbetween 400 nm to about 550 nm (from McCree, 1972a). (Bottom Left)Processed LEDs at wafer level with violet to green obtained fromconventional InGaN/GaN MQWs while yellow to red from quantum dotsincorporating MQWs (bottom right) EL from QD LEDs


LEDs � technology

Further Reading K. Inada et al. Plant Cell Physiol 17 355 (1978)V. Bafetti “White Paper: Selecting LED Lighting for horticultural Application”, LumiGrow, Inc , 1-12K (2008)J. Mccree Agric. Meteorol. 9 191(1972)C. B. Soh J. Appl. Phys. 108 093501(2010)C. B. Soh Nanoscale Research Letters 5 1788 (2010)

which was formed through re-growth of embedded GaNnanopillars over a SiO2 film. The SiO2 film was patternedby carrying out ICP etching with an anodic aluminumoxide mask featuring an array of holes that were 125 nmin diameter and spaced 250 nm apart.

Anodization of aluminum film or foil using various acidsand applied voltages produces hole arrays with diametersranging from 60 nm to 200 nm. This serves as a naturalsurface patterning technique. The periodicity of theembedded array of GaN nanopillars enhanced lightextraction of the LEDs by 34 percent.

Higher gains of 50 percent of more should be possible byimproving internal quantum efficiency through reductionsof threading dislocations and stress relaxation. This is arealistic goal, because the separation between dislocationlines is about 200 nm for a GaN sample with a dislocationdensity of 108 cm-2. Since in our case the diameter of theholes is just 125 nm, it should be possible to preventmany of the threading dislocations from furtherpropagation and annihilate them at the SiO2 mask viabending at the GaN-SiO2 interface.

While our QD LEDs enjoy the advantages associated withzero dimensional structures, such as strong confinementof excitons and color tuning via size and compositioncontrol, they are held back by restrictions in the choice ofgrowth temperatures for the top p-type GaN layer. TheAlN encapsulation layer can reduce the indium out-diffusion from quantum dots, but it cannot eliminate it. Sowe are currently exploring alternative techniques, such asthe implantation of acceptor into p-type GaN, followed bylaser annealing for activation.

Another goal of ours is to develop vertical quantum dotLEDs. This could be realized by either an existing laser lift-off technique or electrochemical wet etching of ourembedded sacrificial SiO2 film in surface patterning. Apatterned n-face GaN aids light extraction, bringing us astep closer to achieving high brightness QD LEDs.

Figure 4 (Top) SEM image of the anodized alumina oxide mask used topattern a hole array on SiO2 and GaN nanopillars grown from SiO2 layer(Middle left) Electroluminescence spectra of quantum dots LEDs grown onGaN nanopillars (with nanohole array of SiO2 mask) and conventional GaN(Middle right) cross-section SEM image of overgrown GaN buffer layer(Bottom left ) Images of packaged apple white LEDs chip with GaN epitaxyovergrown on the GaN nanopillars (Bottom right) sample structures for theapple white LEDs

While our QD LEDs enjoy the advantages associated with zero dimensional structures,

such as strong confinement of excitons and color tuning via size control, they are held

back by restrictions in the choice of growth temperatures for the top p-type GaN layer

conference report � IWN 2010

L EDs and lasers are the big success stories of theIII-nitride field. Thanks to the tremendous growth

in device revenue, sales of nitride chips are now onlyeclipsed by those made from silicon. In the researchcommunity these light emitting devices are also hot,having taken up a prominent position on the conferencecircuit, including dominance of the two big biannual nitridegatherings: the International Workshop on Nitridesemiconductors (IWN) and International Conference onNitride Semiconductors (ICNS).

So it is not surprising that advances in the performance ofblue, green, white and UV light emitters played a leadingrole in many of the presentations at the recent IWN 2010meeting. However, this gathering had a noticeablydifferent feel – one that reflected its growing maturity,which has been buoyed by the increasing diversity of III-Ndevices and their applications. This shift in outlookrevealed itself in the vibrancy of newly added workshopsessions on power switching transistors, RF systems, and

photovoltaics and energy harvesting. And it was alsothere in a more subtle form at the handful of social events.There nitride researchers mingled with attendees frommainstream silicon companies such as InternationalRectifier, National Semiconductor, and Applied Materials.

The meeting kicked off with a plenary talk by Jim Speckfrom the University of California, Santa Barbara (UCSB)on the growth, characterization and performance ofvarious light emitters. Key results from his discussionsincluded continuous-wave results on m-plane laser diodesoperating at 459 nm with 4.1 KA/cm2 threshold currentdensity and a 9.8 V threshold voltage. He also detailedthe challenges for growing on various non-polar and semi-polar planes and justified UCBS’s present focus onsemipolar (2021), pointing to the higher indiumincorporation on this plane and the results it hasproduced: 516 nm lasing and 528 nm LEDs. Thecollection of invited talks on the first two days alsoincluded a presentation given by one of Speck’s

IWN showcases the diversityof III-nitridesWhile LEDs still dominate the IWN meetings, there is a growing interest innitrides for transistors, detectors, solar cells and water-splitting devices, reportsW. Alan Doolittle from Georgia Institute of Technology.



IWN 2010 � conference report

colleagues from UCSB, the computational scientist ChrisVan de Walle. He offered a new insight into an old topic,the source of yellow luminescence from carbon impurities.In addition, he described recent efforts to computationallyquantify the strength of direct Auger recombination and anewly suggested process - phonon-assisted Auger. Bothof these processes have a potentially important role toplay in LED droop.

Delegates were also treated to an insightful presentationby Eva Monroy from CEA Grenoble, France of MBEgrown inter sub-band (ISB) detectors, which includedimpressive TEM images. Detector results includedoperation well into the near IR region at 1.5 μm, the firstobservation of ISB absorption covering the entire mid-IRrange from 1.5 to 10 μm and a demonstration of ISBabsorption in the far IR at 9 meV. The audience wasclearly impressed by efforts that not only married state-of-the-art growth, TEM and quantum mechanicalsophistication, but also provided a glimpse into thepossible future of III-Nitrides.

An update of activities at the start-up Nitek was providedby Vinod Adivarahan. He revealed that the University ofSouth Carolina spin-off, Nitek, has produced pixelatedsingle chip LEDs operating at 280 nm with 53 mW outputand hybrid/multi-chip versions with a 233 mW output atroom temperature. These power levels are suitable forsterilization, UV curing and biological detectionapplications.

Nitride transistorsTomas Palacios from MIT provided further evidence for theincreased diversity of the III-Nitride field. In an invited talkhe argued that GaN is an ideal transistor for mm- andsub-mm wave applications, before backing up his claimwith a description of transistors with an fT of 225 GHzand an fmax of 300 GHz, and an outline of pathways toterahertz frequencies. Palacios then set the stage forparallel sessions later that week, which focused on therapidly emerging “low hanging fruit” that is the GaN-on-silicon power electronics market. This should be asignificant percentage of the well established $ 20-40billion silicon power device market.

Another scientist accepting the invitation to speak at theconference was Masaaki Kuzuhara from University ofFukui, Japan, who also spoke about nitride transistors. Hedetailed the high-temperature operation of AlGaNchanneled transistors with aluminum concentrations inexcess of 50 percent. These outperformed variants with aGaN channel at high temperature, opening up yet anothertransistor market for III-Nitrides.

Enrique Calleja Pardo from UP Madrid, Spain delivered abrilliant overview of the now well-understood mechanismsfor nano-rod nucleation and growth. Pardo said that thisfield is “fully matured”, and backed up this claim by

showcasing the research of H. Sekiguchi and his co-workers (see Appl. Phys. Lett. 96 231104 (2010)), whichdetails the fabrication and characterization of a full colorrange of nano-rod-based LEDs and many other equallyimpressive devices. After the opening two days of invitedsessions delegates were presented with a mind-numbingsmörgåsbord of choices stretching out over two days ofparallel sessions. Words cannot do justice to the numberof choices available.

The statistics gives a flavor, however - 385 talks and 240posters in two days that spanned epitaxial growth; bulkcrystal growth; optical, electronic and magneticproperties; device processing and fabricationtechnologies; defect characterization and structuralanalysis; theory and simulation; nanostructures; lightemitting devices; electron transport devices; sensors andMEMS; plus a newly added session in photovoltaics andenergy harvesting. This new session included a score oftalks on photovoltaics and solar-induced water splitting.

Figure 1.Example of aninter-subbanddetector andquantum welldesignpresented byEva Monroyfrom CEAGrenoble,France.Structurescovering thenear, mid andfar IR regionsweredemonstrated

IWNS facts and figuresThe International Workshop on Nitride Semiconductors2010 was held in Tampa, Florida, from 19 to 24September. Attendance at the meeting exceeded theprevious IWN (2008) in Montreux by almost 15percent, with 793 delegates making their way therefrom all over the world. 305 delegates were from NorthAmerica, 255 from Asia and 204 from Europe.Following in the footsteps on previous IWN meetings,the conference started with two days of invited plenarytalks, followed by two days of parallel sessions, beforeconcluding with a mix of two plenary talks, late news,and reviews of the workshops. The traditionalworkshop themes, such as those of epitaxy, RFtransistors and nanostructures sessions, were addedto this time around, thanks to the introduction ofsessions on power switching transistors, RF systems,and photovoltaics and energy harvesting.


conference report � IWN 2010

Attendance was healthy, and some invited sessions werestanding room only. They were not there to hear goodnews, however, but to wrestle with one of the weaknessesof nitride devices. The unavoidable truth is that today allInGaN photovoltaic results are abysmal single digitefficiencies. This poor showing stems from phase separationissues within InGaN that limit the practically achievabledevice energy bandgap to portions of the solar spectrumwith minimal radiation. The upshot is low efficiencies.

One possible route to overcoming these issues wasrevealed in an invited talk by Christiana Honsberg fromthe Arizona State University. She presented someintriguing new results, attained in collaboration withstudent Michael Moseley from Georgia Institute ofTechnology, which outlined growth methods that cancompletely eliminate phase separation. Similar growthtechniques have been used by Chris Boney’s team fromthe University of Houston, and have yielded respectablecurrents but at lower than expected voltages. Water-splitting talks highlighted challenges with surfacestability against photo-electrochemical etching. The resultsrealized to date are highly dependent on surfacetreatments and measurement methodology. Severalspeakers also pointed out that a successful photo-electrochemical process would need to include a methodfor separating hydrogen and oxygen. This topic waslargely outside the focus of the session.

MBE: down but not out During the IWN meeting there was an intriguing subtleundercurrent that spontaneously emerged throughout themeeting: a resurgence in promising MBE results,particularly regarding the growth of InGaN based devices.Evidence of this resurgence could be found in the talkgiven by Moseley from Georgia Institute of Technology,which detailed the control of phase separation throughoutthe entire miscibility gap using Metal Modulated Epitaxy(MME). It was also present in Chris Boney’s InGaN solarcell award winner poster, the ultra-high growth rate resultsfrom the Los Alamos National Laboratory group usingtheir scalable ENABLE process, and also in ChristinaHonsberg’s descriptions of the impact MME would haveon InGaN photovoltaics. What’s more, MBE featured in

the promising nitrogen polar green LEDs reported by theOhio State University group in the late news session andthe encouragingly high hole concentration presented bystudent Jonathan Lowder and co-workers at GeorgiaTech. Last, but by no means least, in the closing invitedtalk LED pioneer Hiroshi Amano pointed out that MBEand its related variants are capable of accomplishingthings that other technologies struggle to achieve. While itis too early to determine if any of these new reports willmanifest into manufacturable products, IWN 2010 didhighlight the promise of alternative growth technologies ina field where MOCVD dominates.

On the last day of the conference, just like the first,conference chairs Christian Wetzel and Asif Kahn gavetribute to honorary chair, Isamu Akasaki from MeijoUniversity, Japan, for his pioneering work and leadershipin the Nitride community. Fittingly, it was announced thatthe next IWN meeting will be held on October 14-19,2012, at Sapporo, Japan. Hiroshi Amano from NagoyaUniversity is taking the role of executive committee chair,with Yoichi Kawakami from Kyoto University serving asprogram committee chair. If the III-nitride field continuesto grow at the current rate, the famous beer gardens ofSapporo that are close to the meeting will be drained dryby hoards of thirsty “Nitridors”.

Figure 2. X-raydiffractionspectra andAFM images forMME grownInGaNthroughout themiscibility gapshowing singlephase materialswith excellentsurfacemorphology,MBE derivedtechniquespresented byMichaelMoseley fromGeorgiaInstitute ofTechnology

Rump sessions in Tampa

To maintain the workshop nature of IWN, theconference organizing committee added five rumpsessions to the IWN meeting. These sessions, whichgave the audience a chance to pose questions to apanel of invited experts, were highly successful withattendance bursting out of many rooms. Discussionswere lively, and in some cases, playfully controversial.The rump sessions covered: � III-N on silicon: the best of two amazing

semiconductors, which focused on how theintegration with silicon enables new opportunities(and challenges) for III-N semiconductors in powerelectronics, optoelectronics and energy

� III-N challenges for RF electronics: whichrevolved around scaling, speed and reliability issuesfor pushing the ‘standard’ HEMT performance

� Ideal III-nitride substrate technology: adiscussion on getting the right balance betweencost of the substrate and its quality, which canenhance device performance

� LED IQE roadmap: from 70 percent to 90 percent,which looked at all the issues relating to increasedefficiency

� III-N nanowires: a debate on the fundamentalissues regarding growth, doping, and novelapplications.

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technology � novel devices

The transistor laser: a radical, revolutionary device

There are tremendous differences between the laser and thetransistor, but it is possible to draw their attributes together bybuilding a transistor laser. This novel device that produces itselectrical and optical outputs simultaneously promises torevolutionize data transfer, enabling new architectures capable ofoperating at incredibly high bit rates, says Milton Feng from theUniversity of Illinois, Urbana-Champaign.


novel devices � technology

The semiconductor industry rakes in billions anddollars from the manufacture of devices invented

way back in the middle of the twentieth century. With thebenefit of hindsight it is clear that the most important ofthem all is the transistor, a device invented by JohnBardeen and Walter Brattain in 1947, which has been thekey building block in the development of microelectronics,integrated circuits, consumer electronics, and thecomputer industry. Not far behind the transistor is thevisible LED, made for the first time by Nick Holonyak in1962, and the laser diode, independently invented in thatsame year by Holonyak and Robert Hall. These twooptoelectronic devices have provided a great foundationfor revolutionizing display, lighting, and information technology.

Although the performance of all these devices has comeon in leaps and bounds over the intervening decades,none can simultaneously deliver an electrical signal and alaser output. The invention of such device had to wait until2004, when I, Milton Feng, in partnership with co-workerHolonyak, produced the world’s first transistor laser.

This revolutionary semiconductor device that offers three-port operation – an electrical input, an electrical outputand an optical laser output (see Figure 1) – has thepotential to a make important contributions to integratedphotonic and electronic integrated circuits, the computerindustry and new information technology. Amongst thesemany promises, it is capable of redefining the approachmade to the transfer of digital data. Today, PCs operatesolely in the electrical domain, and hooking up to theinternet requires an infrastructure involving transmittersand receivers that can provide an interface with theoptical domain. The transistor laser, however, is capable ofperforming all these functions itself. One of its roles couldbe to act as an optical interconnect that could allowincredibly fast data flow to and from memory chips,graphics processors and microprocessors.

Our transistor laser, which emits infrared light, is amodified, high-speed HBT with a quantum well in itsbase region. In conventional high-speed HBTs, whichinevitably operate at a high current density, the baseprovides the pathway for electrons to travel from theemitter to the collector. In our device, the quantum wellin the heavily-doped base traps some of theseelectrons, which diminishes the transistors gain, butallows this device to realize radiative recombinationbetween holes and electrons. Thanks to the geometry ofour device – the chip has cleaved facets that act asmirrors – the light that is emitted is bounded by a cavity,enabling stimulated emission, one hallmarks of a laser.

Our first transistor laser needed to be cooled with liquidnitrogen. But a year later it could be run at roomtemperatures, thanks to improvements in MOCVD growth

and the design of the quantum well. Since then we havefocused on improving the quality of light output from ourtransistor laser and understanding its electrical behavior.

Revolutionary modulation speedsOne of the really encouraging attributes of our transistorlaser is its incredibly fast radiative recombination lifetime:it is below 30 ps. This can spur the direct-modulationbandwidth in an LED to 10 GHz, and to 100 GHz in alaser. The far higher bandwidth will accelerate thedeployment of LEDs and lasers in optoelectronicinterconnects and open the door to a new generation ofhigh-performance, electronic-photonic integrated circuits.

Traditional laser diodes suffer from a resonance peak in thefrequency response. To combat this, resonancecompensation circuits are included in transistor laserdriver circuits. Our transistor lasers, however, do not haveto contend with this thanks to a shift in the carrier-photondamping ratio and elimination of the resoance peak.Thanks to these attributes, our laser transistors could beused to build an ultra-low power transmitter and array for100 Gbit/s Ethernet and optical interconnect applications.In addition to the high speeds, there is also the possibilityto tap into our device’s non-linear characteristics, andexploit flexible signal mixing and processing.

An additional weakness of the conventional laser is apulsation or “ripple” in its output. This phenomenon is wellunderstood. It was observed in 1959 in masers undercertain pump conditions, and has been studied in detailby the researchers Statz and deMars. They explained itsoccurrence in the 1960s by studying the transient solutionof a pair of coupled carrier-photon rate equations

Fig. 1 Three-port operation of the transistor laser provides an electrical input(port 1), an electrical output (port 2) and an optical laser output (port 3).


technology � novel devices

describing the dynamical interaction between populationinversion and cavity electromagnetic energy.

The unwanted self-resonance seen is these masers alsoplagues today’s laser diodes used for data communication.Here it causes a hike in the bit error rate, which iscountered with expensive, complex peripheral circuits.Typically passive low-pass filters, such as Bessel filterswith a fixed cut-off frequency, are employed to “filter out”the resonance frequencies. But this addition comes with abig performance penalty: it restricts the laser’s transmissionbandwidth to below its resonant frequency.

One of the great strengths of our novel, three-port deviceis that it can produce resonance-free semiconductor laserbehavior. This stems from the incredibly fast basespontaneous recombination lifetime, which is typically just29 ps. To realize this we use an approach that would failin today’s workhorse for data communication, the p-i-ndouble heterojunction laser. This involves building astructure that tilts the injected carriers and diffuses themacross a thin, oppositely doped quantum-well base activeregion. Slowly recombining carriers are removed, and

“fast” recombining carriers favored (see Figure 2). Itfollows that it is possible that the intrinsic spontaneousrecombination time in the base of the transistor can be“clamped” at the same order of magnitude as thequantum well base region transit time, typically 10 ps.

We have studied the behavior of our transistor laser inmore detail by considering its small-signal linear opticalresponse. A damping factor is included in ourcalculations. One insight gained from this effort is thereare at least three approaches to reducing the resonancepeak: speeding the base spontaneous recombinationlifetime; increasing the natural resonance of the system;and reducing the ratio between the base current and thethreshold current. Analysis also reveals that it is possibleto realize a “critically damped” condition that eliminatescarrier-photon resonance.

The small-signal linear optical response of our device hasbeen calculated for spontaneous recombination lifetimesof 2, 10, 50 and 250 ps. For these calculations we haveassumed a photon lifetime of 2.5 ps and a value of five forthe ratio of base current to threshold current.

In addition, we have measured and fitted an opticalfrequency response to our transistor laser. This highlightsthe absence of carrier-photon resonance, which resultsfrom the “fast” base spontaneous recombination lifetime.In agreement with our model, there is a slight resonancein the output of our laser, which is less than 3 dB and onlyseen at higher bias. What is pleasing is that a resonance-free response of the tilted-charge transistor laser isobserved at a range of biases: (a) IB = 30 mA; (b) 40 mA;(c) 60 mA; and (d) 100 mA.

It is worth noting that the Statz and deMars coupledcarrier-photon equations do not include parasitic chargingdelays. To cater for this, we have developed a physicallybased transistor model, which includes parasitic chargingdelays to predict microwave frequency response anddigital eye-diagrams.

A consequence of the multi-port capability of thetransistor laser is the need to re-formulate Kirchoff’s law,which is widely used to analyze and design conventionalcircuits. In order to cater for our transistor laser, this lawmust include energy conservation, and not simply currentand charge. We have recently done just this, andpublished a paper detailing these efforts in the Journal ofApplied Physics. Our novel transistor laser clearly holdsgreat promise. It is still early days, but what is clear is thatthis multi-port structure offers a vast improvement intopological and device-to-device system design freedom.Thanks in part to these attributes, it promises to offer aleap in the performance of electrical-optical integratedcircuits that is impossible to conceive with either thetransistor, or even more limited two-terminal diode.

� This work is sponsored by DARPA and ARO

Further readingG. Walter et al.Appl. Phys. Lett. 85 4768 (2004)

M. Feng et al.Appl. Phys. Lett. 87131103 (2005)

G. Walter et al. Appl. Phys. Lett. 94231125 (2009)

M. Feng et al. Appl. Phys. Lett. 95033509 (2009)

H. W. Then et al. J. Appl. Phys. 107094509 (2010)

Figure 2. (a, top) Bandwidth (20 GHz) (b, above) Eyediagram (13.5 Gbit/s)


QDIPs � technology

Removing strain promises to boostdetector performanceQuantum dot infrared photodetectors suffer from strain in their nanostructures thatculminates in various performance-degrading defects. However, many of these defects canbe avoided by turning to a novel, strain-free growth method based on the deposition ofdroplets, says Jiang Wu from University of Arkansas Fayetteville.

Infrared photodetectors continue to attract a great dealof interest thanks to the numerous applications that

they can serve. These detectors can be used for nightvision, optical communication, target identification, firefighting, medical diagnostics and surveillance.

The first infrared photodetectors that appeared on themarket were fabricated from materials with a narrowbandgap, such as lead salt, InAs1–xSbx, and Hg1–xCdxTe(MCT). Detectors fabricated from these alloys haveexperienced a great deal of success and they are stillselling today. However, they are plagued with growth-relatedissues, which has stimulated the development ofintersubband quantum infrared photodetectors. Duringthe last two decades, infrared photodetectors based onquantum wells and quantum dots have undergonedramatic development. Of the two types, the quantum dotinfrared photodetector is the more promising due tointrinsic advantages associated with three-dimensionalconfinement. These include sensitivity to normal incidenceradiation and high temperature operation.

One exciting aspect of the quantum dot infraredphotodetector (QDIPs) is its potential to combine highresolution with multicolor detection capability. Traditionallythese types of detector are fabricated from either InAs orInGaAs quantum dots. Coherent nanoscale islands aregenerally formed when a certain amount of In(Ga)As isdeposited on the (Al)GaAs surface. However, other lattice-mismatched materials have been investigated as well.

Quantum dots are formed by a growth procedure known asStranski–Krastanov (S-K) growth. Transformation from atwo-dimensional growth mode to a three-dimensional onedepends on the strain of deposited materials. Theinevitable strain arising in S-K quantum dots introducesvarious defects, including long stacking faults, shortstacking faults and dislocations. These defects impair the

optical and electronic properties of QDIPs and are one ofthe biggest factors behind their low quantum efficiency.

At the University of Arkansas Fayetteville we employ anovel growth process for produing strain-free dots:droplet epitaxy. This approach separately supplies sourceelements. Generally growth begins by forming nanosizedroplets of group V materials. These structures arecrystallized by group III vapor transforming droplets toyield a process that creates semiconductor nanostructures.

One of the great strengths of the droplet epitaxy approachis its versatility. It can construct quantum dot pairs,quantum molecules, quantum rings and nanoholes. In allcases, these tiny structures are free from strain, which ispromising for the fabrication of high-performance devices.The QDIPs that we are developing feature strain-free

Figure 1.Atomic forcemicroscopyimage ofquantum dotpairs grown byhightemperaturedroplet epitaxy


technology � QDIPs

GaAs/AlGaAs quantum dot pairs, which are grown on a(100) semi-insulating GaAs substrate by MBE. Typicallythe sample structure is a n-i-n photoconductor.

A 0.5 μm n-type GaAs layer with silicon doped to 2 x 1018

cm-3 is grown at 580 °C as the bottom contact layer. Ontop of this we deposit an active region containing 10periods of GaAs/AlGaAs quantum dot pairs. Due to thestrain-free property in future we could incorporate moreperiods to improve absorption and in turn increase theresponsivity of our detectors. After the active region wedeposit a 300 nm n-type Al0.3Ga0.7As window layer that issilicon-doped to 3 x 1018 cm-3, followed by a 5 nm silicon-doped GaAs layer for making the top ohmic contact. Thethin cap also prevents oxidation of AlGaAs.

Our efforts involve droplet epitaxy at temperatures in theregion of 550 °C. Droplet epitaxy is normally performed atlow temperatures, but higher temperatures cut defects,leading to higher quality materials.

We have studied the morphology of our samples with anatomic force microscope (see Figure 1). The images thatwere acquired reveal that the two quantum dots arelaterally aligned along the [011] direction. This is becauseof the anisotropic surface diffusion coefficient of galliumadatoms. The density of the quantum dot pair is1.3 x 108 cm-2, their average height is about 9 nm, andtheir base diameters range from 150 nm to 200 nm.

To understand our sample’s optical properties we haveinvestigated its photoluminescence (PL) using 532 nmexcitation from a Nd: YAG laser. Time-resolved PL hasbeen performed by combining this excitation with that from a750 nm mode-locked Ti: sapphire laser producing 2 pspulses at an optical pulse train of 76 MHz (see Figure 2). PLspectra are taken at a low temperature, typically 10 K. Forthe continuous wave PL, various excitation powers wereapplied and ground and excited energy levels identifiedfrom PL spectra. PL decay transients were measured fordetection wavelengths of 810 nm.

Time-resolved PL reveals two components to electron

relaxation: a slow decay time typically ranging from 0.3-0.7 ns; and a fast decay time of around ~100 ps. Therelatively long PL decay time indicates that the quantumdots have good optical properties.

To probe the energy levels, we performed PL excitationand visible-near IR photoconductivity measurements. PLexcitation revealed multiple peaks and confirmed theexcited states observed from PL spectra. Meanwhile, thephotoconductivity spectra uncovered possible energylevel transitions. Under different bias voltages, theoptoelectronic transition could be tuned, thanks to state-filling taking place as electron injection changes.

We have used photolithography to fabricate photodetectorsfrom these quantum-dot-pair samples. The area of a singlepixel is 500 μm x 500 μm. The pixels exhibit dark currentdensities of 5.6 x 10-8 A/cm2 at 80 K and 5.76 x 10-5 A/cm2

at 300 K. These low values are a highly desired attributein high performance infrared photodetectors.

Further insights into the optical characteristics of oursamples have been garnered by studying their mid-infrared (MIR) photoresponse spectra with an FTIRspectrometer, using a normal incidence configuration anda MIR source. These measurements reveal a broadbandmid infrared photoresponse spanning 3.0 – 8.0 μm. Thiswavelength range is of great interest due to thetransmission window of the atmosphere. The mainphotoresponse intensity peak is measured at 5.5 μm(225 meV), corresponding to intersubband transitions inquantum dot pairs. These measurements also reveal alarge full width at half maximum (FWHM) in thephotoresponse spectrum. This is about 2.1 μm when thedetector is biased at 0.4 V.

Due to a large spectral width and relatively large energyseparation, the photoresponse includes a contributionfrom bound-to-continuum transitions. Due to the easytuning of nanostructures by droplet epitaxy, a multicolordetector can be achieved in a single device. For example,dual sized quantum dot pairs can be employed to detecttwo distinct wavelengths. Despite the very low density ofquantum dot pairs in the device, there is a MIRphotoresponse at 80 K. Simply increasing thenanostructure density can dramatically increase thisresponse. The density of quantum dot pairs incorporatedin our device is about two orders of magnitude lower thanthe typical density of In(Ga)As quantum dot detectors.

Given a higher density of quantum dots, this type ofdetector is expected to achieve state-of-the-artperformance. Also, thanks to the flexibility of the growthtechnique, the energy levels can be easily engineered todetect long-wave infrared light, far infrared light, and eventerahertz light besides MIR light. These strain-freenanostructures may also find application in otheroptoelectronic devices such as lasers and solar cells.

Figure 2:Probing with agreen lasersource unveilssome of thecharacteristicsof the quantumdots

FurtherreadingJ. Wu et al.Nano Lett. 10 1512 (2010) A. Rogalski,Progress inQuantumElectronics, 27, 59-210,(2003)


review � research

Navy unveils novel HBTRESEARCHERS at the Naval ResearchLaboratory in Washington DC claim to haveproduced the first InAlAsSb/InGaSb DHBTswith an InAsSb emitter and sub-collector.

Introduction of this ternary emitter has led tosignificant improvements in DC and RFperformance. This transistor, which is basedon materials with a 6.2 Angstrom latticeconstant, has a collector current density of1.9 x 105 A/cm2, a breakdown voltage inexcess of 2.5 V, and values for the cut-offfrequency and maximum oscillation frequencyof 59 GHz and 34 GHz, respectively.

According to corresponding author JamesChamplain, these results show that thisparticular DHBT could serve manyapplications demanding low powers, highfrequency performance, or both. Examplesinclude deployment in A-to-D and D-to-Aconverters; ultra-linear low-noise amplifiers;and radar and imaging systems, especiallythose operating at terahertz frequencies.

One of the strengths of the team’s transistoris its low power consumption, which is amajor plus point in battery-powered,portable applications.

“Reduction of battery weight and extendedlifetime are critical in applications whereweight and space are limited, such asspace-based applications,” says Champlain.“Alternatively, in large distributed systems,such as some large phased array or imagingapplications where power must bedistributed to each cell of the system,reduced power consumption is critical inachieving practical applications.”

Solid-source MBE was used to form theDBHT epistructures that included a complexbuffer (see figure for details). Standardprocessing and e-beam lithographytechniques formed transistors from theseepiwafers with a 2 x 10 μm2 emitter.

Characterization revealed base and collectorideality factors of 1.5 and 1.0, respectively.Series resistance was relatively low, thanksto the introduction of the InAsSb emitterand sub-collector layers.

Champlain says that the team will now workon improving DHBT performance throughmodifications to the device’s design layoutand its material structure. This could involvereducing the area of the device, which should

POLISH GaN substrate manufacturerAmmono has unveiled characteristics of itssemi-polar (2021) substrates. This cut ofGaN is a promising candidate for theproduction of green lasers. Last summer,engineers at Sumitomo produced a531 nm edge-emitter by exploiting therelatively high indium incorporation inInGaN quantum wells grown on this plane,plus the built-in electric fields that pushemission to longer wavelengths.

Working in partnership with WroclawUniversity of Technology, Poland, Ammonohas employed X-ray diffraction to probe itssemi-polar material that is produced in ahigh-pressure ammonia solution. X-raydiffraction rocking curves on pieces of(2021) GaN, which has a typicaldislocation density of 5 x 103 cm-2 and aradius of curvature in excess of 100 m,produce a full width at half maximum ofjust 17 and 21 arcsec for the (2021) and(2020) peaks. “The best crystallographicproperties and the lowest dislocation

Ammonothermal yields high-quality semi-polar GaNthe optical reflectance of the material, thederivative with respect to a modulatingelectric field is evaluated,” explainsDwilinski. This measurement yielded asharp, strong resonance peak at 3.4 eV,indicating that the sample had both goodoptical properties and a good surface.

The piece of semi-polar GaN studied by thePolish researchers had dimensions of 9 mmby 12 mm. But far larger sizes should bepossible, given that Ammono has alreadyproduced 1-inch GaN non-polar crystalsthat can yield semi-polar substrates of atleast that size. Today the Polish companysells 10 mm x 10 mm, 10 mm x 20 mm and13 mm x 15 mm substrates. “We will workto increasing the size of our semi-polarsubstrates to 1-inch in 2011,” says Dwilinski.

“This size is not available on the commercialmarket, and is hardly achievable by HVPE.”

R. Kucharski et al. Appl. Phys Express 3101001 (2010)

cut capacitance. Optimizing the selection ofIII-V layers offers another opportunity toincrease transistor performance.

“Currently the device’s design includes aquaternary collector,” explains Champlain.“Classically, mixed alloys, such as ternariesand quaternaries, have poor thermalconductivity compared to binary alloys.Therefore, alternative collector designsand/or process technologies, such assubstrate transfer, may be needed tocapture the full benefit of these devices.”

J.G. Champlain et al. Elec. Lett. 1333 46(2010)

Figure caption: The DHBTS incorporateInAs0.66Sb0.34 layers that have “superb”transport properties, and can provide anextremely low contact resistance whenused for n-type contacts.

Ammono is pioneering ammonothermalgrowth of semi-polar and polar GaN

density may suggest the best semi-polarGaN ever produced,” says Ammonopresident Robert Dwilinski.

Contactless electroreflectance has alsobeen used to study semi-polar (2021) GaN. “With this technique, instead of measuring


research � review

VCSELs retain speeds at high temperaturesA GERMAN team claims to have broken therecord for data transmission from an oxide-confined 980 nm VCSEL operating at 85 °C.Their device, which is capable of 25 Gbit/soperation at that elevated temperature, is anideal source for very short optical links inhigh performance computers, according tothe researchers from the TechnicalUniversity of Berlin and VI Systems.

“Since temperatures inside computers areas high as 85 °C, or even higher, goodtemperature stability is indispensable forrobust, inexpensive optical links,” saysDieter Bimberg, head of the research teamat the Technical University of Berlin.

Today 850 nm is the standard wavelengthfor short-reach optical links and local andstorage-area networks, but Bimbergbelieves there is a strong case for 980 nmsources in all these applications.

“980 nm has the crucial advantage oftransparency of the GaAs substrate, so onecan easily realize bottom-emitting devices,increasing and simplifying packagingdensity. This is very important, for example,in the case of a large number of VCSELsfor parallel optical links.”

VCSELs are fabricated via MOCVD growth

of an epistructure containing 24 pairs ofAl0.12Ga0.88As and Al0.90Ga0.10As layers for thebottom mirror, and 37 pairs for the topmirror. Sandwiched between these mirrorsis an active region with five compressivelystrained In0.21Ga0.79As quantum wells that are4.2 nm thick, which are interlaced with 6 nmthick GaAs0.88P0.12 tensile strained barriers.

Selective wet etching forms two 30 nm-thickAl0.98Ga0.02As oxide apertures positioned justabove the microcavity, in the field intensitynodes in the first two periods of the uppermirror.

Output from this 10 μm-diameter oxideaperture VCSEL is 4.3 mW at 20 °C, falling

to 2.6 mW at 85 °C. This relatively small reduction in power stems from anintentional red-shift detuning of 15 nmbetween the quantum well gain peak andthe cavity resonance.

Future targets for the team are to speed the980 nm VCSELs to 40 Gbit/s and maintainthis rate at 100 °C. “We will use anoptimized active region to improve the temperature stability even further, and an optimized cavity design to increase the speed beyond 25 Gbit/s,” revealsBimberg.

A. Mutig et al. Appl. Phys Lett. 97151101(2010)

The 980 nm VCSELs produced by researchers at the Technical University of Berlin andVI Systems have bit error rates at 25 Gbit/s of less than 10-12.

Modeling questions Auger’s contribution to droop CURVE fitting with the standard equationfor carrier recombination in an LED showsthat Auger recombination cannot, by itself,account for droop, the decline in deviceefficiency at high drive currents. That’s theclaim of a partnership between RensselaerPolytechnic Institute (RPI), Sandia NationalLaboratories and Samsung LED.

Their effort involved fabricating a range ofLEDs with varying numbers of quantumwells, device areas and quantumefficiencies; measuring external quantumefficiency at a range of currents; and fittingthe data with the well-known “ABC”equation for carrier recombination. Thisequation describes non-radiativerecombination at defects by a term that isproportional to the carrier concentration,and uses quadratic and cubic variants tocater for radiative and Auger recombination,respectively.

“It is impossible for us to just use the ABCmodel and get a good fit,” explains teammember Fred Schubert from RPI, who saysthat the team’s experiment indicates thatthere are contributions from second order,third order and fourth order terms caused bycarrier leakage. “Some of the samples havesignificant fourth order contributions.”

Inserting additional terms in the carrierrecombination model has enabled the US-Korean partnership to fit the experimentaldata far better. To realize a good fit at alldrive currents, it began by matching theABC model to the data at low currentdensities. “This part of the curve is not inquestion,” says Schubert. “Everybodyagrees that there is Shockley-Reed-Hallrecombination and radiative recombination.”

Curve fitting was then extended to highercurrents, where droop plays a significant

role. Here they found that at currentdensities of 111 A/cm2 the higher-than-thirdorder terms contribute 13 percent or moreto the total recombination rate.

Using their model, the team extracted ancoefficient for third order processes of 8 x 10-29 cm6 s-1 for the LEDs, which is comparable to values obtained by other experimentalists, but far higher thanthose determined by first-principletheoretical calculations for Augerrecombination.

The researchers point out that this strikingdifference could be due to one componentof carrier leakage that, like Augerrecombination, is proportional to the cube ofthe carrier density.

Q. Dai et al. Appl. Phys Lett. 97 133507(2010)

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November/December 2010 www.compoundsemiconductor.net 57

industry news ♦ LEDs

Industry newsLEDsWavien & Osram JV to Develop RGB LEDs Wavien’s RLT technology, which recaptures light lost in standard optical systems and recycles it back to the system output, will be used in Osram LEDS for use in projection applications.

Wavien Inc. is collaborating with Osram Opto Semiconductors to develop RGB LEDs for projection applications. The joint effort will combine Osram’s LED technology with Wavien’s proprietary LED recycling (RLT) to provide low cost, high output LED solutions for pocket projectors and pico-projectors small enough to be integrated into cell phones.

Wavien’s RLT technology recaptures light lost in standard optical systems and recycles it back to the system output, transforming it back into useable light. An output improvement, as high as 100%, can be achieved. Besides providing greatly enhanced screen brightness, the unique recycling technology extends battery life for portable systems, and reduces the heat load for ease of cooling.

This performance improvement is provided by either adding a simple reflector with an aperture to standard LED packages or by adding a unique imaging light pipe with an aperture. The dimensions of the apertures, which determine the amount of recycling, and the total size of the reflector or light pipe can be scaled to meet the user’s needs.

“Wavien’s LED light recycling technology offers outstanding brightness by recovering and recycling high angle light from the LED that is normally wasted with traditional LED coupling systems,” stated Kenneth Li, President and CEO of Wavien, who is also the inventor of the recycling technology. Li added: “This unique design enables LED-based projectors to have increased total brightness by up to 100%. Clearly, with such improvements in cost and performance, projectors will be used in locations that were previously not feasible.”

Wavien, based in Valencia, California, is a technology licensing company developing long-life, high-performance light sources and engine prototypes for the projection and general lighting industries. Wavien currently offers its unique “Dual Paraboloid Reflector” (“DPR”) technology using ultra-high-pressure arc lamps. Wavien also offers the LED illumination market improved brightness improvements with its RLT recycling and non-imaging optical technology. These technologies improve lamp life, brightness, and efficiency when teamed with applications in the projection display, fiber optics, entertainment, and general lighting markets.

Osram is part of the Industry sector of Siemens and one of the two leading lighting manufacturers in the world. Its subsidiary, Osram Opto Semiconductors GmbH in Regensburg (Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applicationsThe firm has production sites in Regensburg (Germany) and Penang (Malaysia). Its headquarters for North America is in Sunnyvale (USA), and for Asia in Hong Kong.

SAFC Hitech To Expand LED Facilities in Taiwan The new facility, expected to be operational by late 2011, will expand the firm’s global capacity for High-Brightness LED manufacturing. Following the March 2010 production expansion of trimethylgallium (TMG) at its Bromborough, UK manufacturing site, SAFC Hitech, reinforced its commitment to the Asia-Pacific electronics markets by announcing plans to build a new, dedicated facility in Kaohsiung, Taiwan. The member of the Sigma-Aldrich Group says the new facility is expected to be operational by late 2011. It will extend the company’s ability to serve the Asian market, leveraging the knowledge and capabilities developed at its existing Kaohsiung facility. The new investment will transition current operations into a new environment that is expected to expand the Company’s transfilling and technical

LEDs ♦ industry news

58 www.compoundsemiconductor.net November/December 2010

service base, as well as add significant capacity for the dedicated manufacturing of high-quality precursors to support the burgeoning High Brightness LED (HBLED) market and ALD and CVD precursors for the silicon semiconductor market. Increased focus on improving efficiency and reducing energy costs through technology and design advances is driving the electronics sector to roll out more ‘energy-conscious’ products and systems. Due to the resulting exponential rise in demand for LEDs, and in particular HBLEDs that are used in applications such as backlighting in flat panel television sets and energy efficient lighting, SAFC Hitech continues to strengthen its leading position as a legacy supplier of reliable precursors for the HBLED market. “As mass manufacturing continues its rise, we are experiencing significant increases in customer and partnership activities in the Asia-Pacific region, which aligns nicely with our core commitment to driving global expansion in the production of precursors for the rapidly expanding HBLED market,” said Philip Rose, SAFC Hitech President. “The expansion of our Kaohsiung presence is a logical next step that will help us to support these markets. By increasing our investment in local technical service capabilities and by leveraging our proprietary technologies and capabilities, we are able to increase our transfilling, production and technical services in these key markets.” The existing SAFC Hitech Kaohsiung capabilities handle and characterize highly-specialized laboratory-scale chemicals and features a dedicated customer support center. This existing site is ISO 9001 certified for quality and ISO 14001 certified for safety and environmental protocols. The facility was originally built to service the semiconductor industry demands for ultra-high quality precursors using proprietary technologies. The site also provides integrated inert atmosphere transfilling stations, state-of-the-art analytical instrumentation for the detection of ultra-low metallic and oxygen containing contaminants and dedicated cylinder preparation and packaging areas. An extensive departmental infrastructure (Health & Safety, quality, shipping, sales) provides for adherence to the highest standards of performance.

SAFC Hitech provides a unique chemistry service translating application understanding into performance materials worldwide. Through collaborative partnerships and an integrated approach from research and development, process development and scale up to commercial manufacturing, SAFC Hitech invests in innovation and manufacturing enabling current and future technology needs.

LEDnovation Breaks 100Lumen/Watt Efficiency Barrier The firm claims its first high-quality Edison-type LED replacement has the world�s highest efficacy for a warm white LED A19 replacement lamp. LEDnovation, a leading innovator in LED lighting and replacement lamp technology, has unveiled what it says is the industry�s highest efficiency and first high-quality 100 lumen/watt, warm white, dimmable A19-type replacement lamp. The first in the series of EnhanceLite A19 Generation-2 LED lamps, the LEDH-A19-60-1-27D-I offers a 615-lumen output at a warm 2700K color temperature, using only 6.15 W of power. It delivers �on-the-target� light levels equivalent to a 60-watt standard incandescent or 13-watt compact fluorescent in standard downlight applications. The efficacy exceeds 100 lumens/watt and was verified at a NIST accredited third party lab. Energy savings of 90% are expected when compared to a 60-watt incandescent bulb, and 53% when compared to a 13-watt CFL. Furthermore it does not contain harmful mercury and emits 2700K dimmable warm white with a CRI greater than 90. It is specifically designed for downlight and recessed fixtures. According to Israel J. Morejon, CEO of LEDnovation, Our milestone achievement of 100 lumens/watt represents the promise of LED lighting as the highest efficiency lamp-level light source. We continue to invent, commercialize and deliver LED



lighting innovations that aim to obsolete energy-inefficient light bulbs. He continued, LEDnovation has conscientiously applied LED technology, power management expertise, and our proprietary color mixing technology, including deeper red saturation, to achieve this precedent-setting level of quality and performance. With improved return on investment and a fraction of the operating costs, it demonstrates a clear business case for replacing environmentally unfriendly incandescent and compact fluorescent bulbs in many types of downlight and recessed fixtures. LEDnovation continues to position itself as a strong proponent of replacement lamps designed for specific applications, rather than simply mimicking the characteristics of incandescent lamps for so many applications that they serve poorly. By understanding and taking full advantage of the directional nature of LEDs, and by adding proprietary technology including Recycled Reflectance, LEDnovation has designed a lamp that delivers more lumens to the target, while achieving higher efficiency, without aesthetically compromising the installed lamp’s appearance in downlight-type applications.

This EnhanceLite A19 Generation-2 lamp further expands the Tampa, Florida based company’s

full portfolio of LED-based replacement lamps, including the recently introduced line of industry-leading PAR and MR16 replacement lamps. LED lighting continues to gain acceptance for a growing number of applications by providing superior performance, higher efficiency and longer lifetimes. Directional applications, such as those currently served by incandescent, PAR, and reflector lamps and which have seen relatively little acceptance of CFL solutions, are providing the newest solid business case for LED-based replacement lamps. Morejon continued, “LEDnovation is continuing to push the technology envelope. This lamp is the first in a series of Generation-2 lamps which will culminate in a full array of color temperatures and outputs to serve all markets seeking the highest efficiency solutions. A dramatic milestone, our second generation A19 lamp is marking the next step in a continuing series of energy efficient, environmentally friendly and cost effective products which deliver on the promise of change without compromise.” With a power factor greater than 0.9, the LED lamp has a strong deep-red rendering/saturation R9 of 90 and a Color Quality Scale (CQS) rating of 90. Cosine zonal distribution is optimized for downlights and semi-enclosed/recessed fixtures. The EnhanceLite A19 also has a smooth zonal distribution beam spread of 134 degrees vertically and horizontally. All LEDnovation lamp models are tested for photometric performance in accredited third-party labs according to IES LM-79 requirements, with reports available online. All lamps meet UL 1993, UL 8750 and CSA 84 safety standards. These commercial grade models are rated for a 50,000-hour lifetime and carry an industry-leading 5-year warranty. The EnhanceLite LEDH-A19-60-1-27D-I is starting production and shipping in mid December 2010. Offering a full complement of LED-based replacement lamps, LEDnovation is leading innovation in the field of solid state lighting. Solid state, or LED lighting generates light from complex semiconductor materials, eliminating much of the wasted energy that has been inherent to electric light-generation for over a century. By combining multi-disciplinary strengths in LEDs, electronic systems, power supplies, thermal



and optics design, LEDnovation has succeeded in developing one of the highest efficacy warm white LED replacement lamps available, offering a winning business case and rapid return on investment to commercial clients and property operators. The company is headquartered in Tampa, Florida and manufactures its products in the US.

Optogan Opens Largest LED Production Facility in Eastern Europe In Russia the Optogan Group has found a prosperous environment for its ambitious expansion plans in LED lighting.

The Deputy Prime Minister of the Russian Federation, Sergey Ivanov, unveiled Optogan’s new manufacturing plant in St. Petersburg. With an overall investment of 3.35 billion rubles (€80m) it is the largest LED component and module factory in Eastern Europe & CIS. The factory, which will employ up to 800 people, covers 15,000 m2 of floor space 5,000 m2 of which is taken up by a clean room environment. The first production line has an annual production capacity of 360 million LEDs and further capacity extensions are scheduled.

Optogan’s new LED component and module factory in St. Petersburg, Russia

The ceremony was attended by the Sergey Ivanov, Deputy Prime Minister of the Russian Federation; Valentina Matvienko, Governor of St. Petersburg; Yegor Borisov, President of Russia’s Sakha Republic (Yakutiya); Anatoliy Chubais, General Director, Rusnanotech; Mikhail Prokhorov,

President, ONEXIM Group and a large audience of well known representatives from the world of politics, research and industry.

Optogan’s newly installed LED assembly lines for high volume production

The three founders of Optogan and entrepreneurs Maxim Odnoblyudov, Vladislav Bougrov and Alexey Kovsh introduced the production facilities to the ceremony’s guests. They also demonstrated Optogan’s highly efficient LED lamps and explained about energy savings and the avoidance of hazardous substances.

Maxim Odnoblyudov, President of Optogan Group, noted that the launch of the factory is a major step in the company’s development. Vladislav Bougrov, General Director of the newly opened factory, said that only the first production line had actually been opened today with a production volume of 30 million LEDs a month.

“At the end of next year, we will grow the production volume due to the high demand for our products,” he added. “LEDs produced in St. Petersburg will be sold in Russia and abroad. We’ve already signed our first major contracts. Also, part of the LED shipments will be sent to our partner companies all over Russia to produce luminaries,” added Alexey Kovsh, Executive Vice President of Optogan.

Optogan established a unique business model to supply LED core technology for luminaires and support to an extensive network of partners within Russia. In future the luminaire business partner approach will be extended to global level.

Against the trend to establish new LED production facilities solely in the Far East, Optogan has found a suitable legislative and infrastructural environment to establish high tech manufacturing in Russia to



enabling high volume LED output at competitive costs. RUSNANO, the fund to provide investment for technology projects in the Russian Federation has provided support for the company and is one of the major shareholders.

“The key goal of RUSNANO is to develop modern production facilities based on leading international scientific knowledge, ensuring they can compete globally. The opening of Optogan’s factory is one of the major synergies of science and business. Technology based on the work of Nobel prize winner Zhores Alferov has been transformed into mass production, making this a first step in the development of a new energy efficient economy and development of the lighting industry in Russia,” said General Director of Rusnano, Anatoly Chubais.

According to Mikhail Prokorov, President of the main shareholder ONEXIM Group, “ONEXIM’s strategy is to invest in these types of innovative companies, which can produce quality products and win a major market share in Russia, as well as the potential to grow globally. We are sure that thanks to this type of production our country has all the opportunities to develop on the global markets.”

The opening of this new high-tech factory in Russia marks another step forward in the modernization and globalization of the Russian economy.

The Optogan Group is one of the technology leaders in the manufacturing of light-emitting diodes (LEDs). With proven innovative and cost-efficient solutions in the fields of high brightness chips, LED components, LED lamps and LED luminaires the company focuses on the needs of its customers.

Optogan was founded in 2004 by three Russian scientists and entrepreneurs in Helsinki (Finland). Since 2005 Optogan GmbH has been developing chip technologies in Dortmund (Germany) and chip production in Landshut (Germany) and is currently ramping up its new production facility in St. Petersburg (Russia). The Optogan Group has sites at Landshut (Germany), Dortmund (Germany), Helsinki (Finland) and St. Petersburg (Russia).

Osram Opto LEDs Pass Rigorous LM-80 Testing The firm’s OSLON SSL and Golden Dragon Plus LEDs have been verified by IESNA LM-80 tests for

two different LED product families. For LED lamp, light engine and luminaire manufacturers to receive an Energy Star certificate for their products, the US Environmental Protection Agency (EPA) requires that the LEDs used in these products must comply with the LM-80 (Lumen Maintenance) test requirements. LM-80 test reports provide evidence that the LED component can be assessed and compared across all LED manufacturers. Osram Opto Semiconductors is one of the first to have successfully met the criteria of the LM-80 test requirements with two very different product families; the OSLON SSL and Golden Dragon Plus. The ceramic OSLON SSL LED and the Golden Dragon Plus premold LED have been inaugurated by the Illuminating Engineering Society (IESNA). Successful completion of the LM-80 test is an essential step toward receiving an Energy Star certificate from the EPA. The aim of the LM-80 test is to demonstrate, in an abbreviated test of 6,000 hours (approximately nine months), a consistent industry method of measuring lumen maintenance of SSL sources, such as LED packages, arrays and modules. The LM-80 specifies that LEDs are tested at three different temperatures to assure performance in various conditions. In addition to the two predefined temperatures of 55°C and 85°C, Osram has used a third temperature of 105°C to simulate the requirements of highly demanding applications. Successful completion of the LM-80 test for two of our very different LED product families is a significant achievement, but it’s only the start. Other products are already in the test phase, so in the near future all our high-power LEDs for General Lighting will comply with LM-80 testing requirements. Luminaire manufacturers will then have an important platform for Energy Star certification by the EPA. said Artur Groesbrink, who is responsible for standardization at Osram Opto. The Energy Star certification is essential if companies want to market their products successful in the United States.



Two different LED types from OSRAM Opto Semiconductors have successful completed the LM-80 test – OSLON SSL (left, with the ceramic package) and Golden Dragon Plus (right, with the premold package). Osram is part of the Industry sector of Siemens and one of the two leading lighting manufacturers in the world. Its subsidiary, Osram Opto Semiconductors GmbH in Regensburg (Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications. With production sites in Regensburg (Germany) and Penang (Malaysia), its headquarters for North America is in Sunnyvale (USA), and for Asia in Hong Kong.

Aqualite Increases LED production With Six Aixtron Tools Aixtron has a new order for six CRIUS MOCVD reactors from LED power chip expert and existing customer Aqualite. The order comprises six CRIUS 31x2-inch configuration deposition systems. The China based company placed the order during the second quarter of 2010 and after delivery of the systems in the current quarter, they will be used for high-power LED production. The new reactors will be commissioned by the local Aixtron support team in Aqualite’s dedicated facility at its mainland China production plant.

James Dong, CEO of Aqualite, comments, “We have been very satisfied with our three existing reactors as they are perfectly matching our requirements. However, we now have to increase our production capacity for high-power LEDs. Aixtron has always been very helpful to us and hence we look forward to receiving these new CRIUS systems. Our systems have delivered on their performance promise – Aixtron engineering means they have superior specification on all counts but particularly in uniformity and yield. The quality of their engineering and the know-how of their local support team are first-class.”

Emerald Invests in GaN-on-Si Manufacturer Azzurro The Germany-based firm uses a novel process to produce Gallium Nitride on Silicon for cheap LED manufacture. Germany-based Azzurro Semiconductors announced the closing of a € 14.5 million growth financing round with Emerald Technology Ventures, Wellington Partners and Good Energies as new investors, joining existing investors Cedrus Private Equity and IBG Innovationsfonds. Azzurro is a manufacturer of ultra high quality Gallium Nitride (GaN) epi wafers based on large area silicon substrates. These wafers are used in the power electronics industry to build high performance devices and in the LED industry to manufacture inexpensive high-brightness LEDs. High power electronic applications like power supplies, solar inverters and power converters for hybrid and electric vehicles are usually manufactured with conventional silicon semiconductors or very expensive silicon carbide devices. GaN-on-silicon is a new material system which has unique advantages in both high efficiency and low cost at high voltages and currents. Previously, this material was not available on large sized silicon wafers and therefore has not been widely adopted. Azzurro closes this gap by providing high-quality GaN layers on 150 mm (and soon 200 mm)



standard silicon wafers, enabling a whole new device category that provides consumers with more efficient electronic devices. The LED industry has adopted GaN but is relying on small sapphire-based solutions, which have supply and cost constraints. Azzurro offers a platform technology for LED producers to process wafers in standard silicon production facilities with high productivity. When compared to the conventional technology, substantial cost savings can be achieved while maintaining the same performance. “We are very pleased to be on board and support the company on its growth and international expansion plan,” said Markus Moor, Partner at Emerald Technology Ventures. “Azzurro presents an exciting opportunity to serve two independently fast growing markets with cheaper and better performing products. The proceeds of this financing will allow Azzurro to build out the necessary capacity and economies of scale to supply these growth markets.” Following this investment, Markus Moor, Partner with Emerald Technology Ventures will join the Supervisory Board of Azzurro Semiconductors. Azzurro is a rapidly growing semiconductor company. Having pioneered the growth of gallium nitride on silicon substrates using metalorganic vapour phase epitaxy (MOVPE), Azzurro is providing its global customer base with epiwafers for LED and high-voltage applications. Azzurro’s unique capability to grow very thick high quality gallium nitride on large area silicon substrates enables cost breakthroughs for high-brightness LEDs and other GaN-based devices. Emerald Technology Ventures is a global leader in cleantech venture capital and operates from offices in Zurich, Switzerland and Toronto, Canada. Founded in 2000, Emerald is a pioneer in this rapidly emerging sector and is focused on innovative technologies in energy, advanced materials and water. Since inception, Emerald has managed three venture capital funds and two venture capital portfolio mandates totaling over € 300 million (US$ 440 million). Emerald is currently investing out of its latest fund and is looking for energetic and passionate entrepreneurs with the vision to build world-class clean technology

companies.

SDK and AWI Unite For Specialty Material Gas Production The two firms have agreed to form a partial alliance in the areas of advanced, innovative, and eco-friendly specialty material gases that can be marketed globally in the production of solar cells, semiconductors and LEDs. The new company, Showa Denko Air Water Co., Ltd., is scheduled to be established next month in Tokyo. The company, to be capitalized at JPY 100 million, will be owned 51% by SDK and 49% by AWI. Demand for specialty material gases has steadily been growing, centering on Asian markets, for use in the production of solar cells, semiconductors, LCD panels, and LEDs. Due to increasing needs for high-quality, functional, energy-saving and compact electronic devices, manufacturers of specialty material gases are now required to develop new products and make further capital investments. Under the circumstances, SDK and AWI have agreed to form a partial alliance in the areas of advanced, innovative, and eco-friendly specialty material gases that can be marketed globally. SDK and AWI will establish an effective production system at the new manufacturing joint venture and launch a wide variety of new material gases, fully utilizing their proprietary technologies. SDK and AWI will take the products from the joint venture and sell them independently through respective sales channels. As a first step, the JV will install a 40 t/y hydrogen selenide (H2Se) production facility within the premises of SDK’s Tokuyama Plant in Shunan City, Yamaguchi Prefecture, Japan. H2Se is used for forming light-absorbing films in CIGS (copper indium gallium diselenide) compound-semiconductor-based solar cells. The JV will start producing H2Se at the plant in June 2011. CIGS-type solar cells are expected to be widely used for large-scale photovoltaic power generation because



their theoretical conversion efficiency is almost equal to that of polycrystalline-silicon-type solar cells. SDK and AWI will aim to quickly strengthen their joint operations, pursuing the possibility of expanding the JV’s product lines and establishing plants at best locations inside and outside Japan. SDK is a major manufacturer and marketer of chemical products serving a wide range of fields ranging from heavy industry to the electronic and computer industries. SDK makes petrochemicals (ethylene, propylene), aluminum products (ingots, rods), electronic equipment (hard disks for computers) and inorganic materials (ceramics, carbons). The company has overseas operations and a joint venture with Netherlands-based Montell and Nippon Petrochemicals to make and market polypropylenes. In March 2001, SDK merged with Showa Denko Aluminum Corporation to strengthen the high-value-added fabricated aluminum products operations, and is today developing next-generation optical communications-use wafers.

China´s ULED Receives 6 Aixtron CRIUS Systems The MOCVD systems will be used for the production of GaN LEDs. Aixtron has received an order for six 31x2-inch configuration CRIUS deposition systems from new customer United LED Shan Dong Corporation (ULED). After successful installation and commissioning of the systems in ULED’s dedicated new production plant in the third quarter of 2010, they will be used for the production of GaN LEDs for back-lighting units (BLU) and general lighting applications. Tzu-Chi Wen, ULED Epi Division Director, comments, “Our company, ULED is a joint venture between UMC, a world leading semiconductor foundry, and Epistar – a leading manufacturer of high brightness LEDs. Our strategy is to integrate LED-based technology and IC industry resources to produce LED chips for lighting applications. The

Aixtron CRIUS reactors have been selected due to their high performance and excellent productivity. It will provide us with a very rapid start-up so that we can be producing our own LED products at lowest risk. Moreover, Aixtron has a worldwide reputation for unique service and back-up so I am sure we have made the best choice for this promising new venture.” Christian Geng, Aixtron Vice President of Greater China and General Manager of Aixtron Taiwan adds, “We are very pleased to have been chosen by this prestigious new customer. This is the first set of MOCVD equipment in this new facility and we have been with ULED every step of the way to ensure smooth installation and commissioning.”

SETI’s Deep UV AlInGaN LEDs Set To Rocket Sensor Electronic Technology Incs UVTOP deep UV LEDs have passed extreme environmental robustness tests to successfully complete space qualification. Sensor Electronic Technology Inc. (SETI), together with Stanford University and National Security Technologies (NSTec) of Livermore, California, has demonstrated unprecedented environmental robustness and radiation hardness of its UVTOP deep ultraviolet LEDs. Deep UV LEDs with peak emission wavelength of 255 nm have passed stringent space qualifications for large temperature variations and mechanical shocks with 27 cycles of 100K temperature cycles and 14g rms random mechanical vibrations. The forward voltage, emission spectra, and optical output power exhibited no significant changes after these harsh environmental tests. SETI’s UVTOP LEDs are a series of UV and deep-UV LEDs with peak emission wavelengths in the range of 240 - 400 nm. They incorporate AlInGaN deposited by a proprietary Migration Enhanced MOCVD (MEMOCVD) process. The UVTOP LEDs have been successfully tested against the requirements for deep space exploration



such as the Europa Jupiter System Mission (EJSM), where they will be subject not only to severe thermal and mechanical shocks, but also high levels of radiation. Under irradiation up to 2x1012 protons/cm2, the LEDs demonstrated extreme radiation hardness. UV LEDs have so far have exhibited high operational lifetimes in excess of 26,000 hours in nitrogen atmosphere, and 25,000 hours in vacuum, without significant power drop or spectral shift. This extreme testing demonstrates the optical, electrical, and mechanical robustness of the UVTOP LEDs is suitable for many space and terrestrial applications where conventional UV light sources are simply too fragile. Solar-blind P-i-N photodiodes with a peak responsivity matching the UVTOP LEDs at 255 nm were also manufactured by SETI and tested to the same stringent space qualifications. These detectors also exhibited extreme radiation hardness and retained 50% responsivity up to 3x1012 protons/cm2 fluence. SETI is a leader in UV LEDs, and UV LED products and claims to be the world’s only commercial manufacturer of UV LEDs shorter than 350nm in wavelength. The firm offers standard UVTOP LEDs and UVCLEAN LED lamps in wavelengths from 240nm to 365nm with DC optical output powers up to 50mW and can offer OEM customized solutions including LED lamps, light sources and complete systems.

AkzoNobel Enhances Trimethyl Gallium Capacity Again The firm is further increasing its capacity for the much in demand LED precursor material Trimethyl Gallium (TMG) Due to continued very strong global demand for its High Purity MetalOrganics (HPMO) product range, AkzoNobel will again significantly expand its production capacity for Trimethyl Gallium (TMG), a key LED precursor material.

The HPMO business, part of AkzoNobel’s Functional Chemicals business unit, is a leading producer of semiconductor grade Indium-, Gallium-, Aluminum-, Zinc- and Magnesium-based metalorganics which are used as key precursor materials in the production of light emitting diodes (LEDs) and solar cells. During this past June 2010, AkzoNobel successfully doubled its production capacity for TMG at its world-scale production facilities in LaPorte, Texas, USA. “Our customers’ response to this expansion has been very positive, and their continued strong demand has already fully adsorbed the enlarged capacity.” says Michiel Floor, Global Business Manager of the HPMO product group. He adds “We continue to support the exciting growth of the LED and other compound semiconductor industries, and have firmly planned ahead for stepwise capacity additions across our High Purity Metalorganics product range, including Trimethyl Gallium and Trimethyl Indium.” In order to continue to meet the growing demand from especially the LED industry, the company has decided to advance its plans for expansion of TMG capacity, again doubling the production capacity. The increased volumes will become available as of February 2011. The capacity addition will further enhance AkzoNobel’s position as the leading global producer of this material. “Our continued investments in the HPMO business further demonstrate AkzoNobel’s commitment to the attractive and high growth LED industry, with general lighting applications becoming reality sooner than expected”, says Bob Margevich, Managing Director of Functional Chemicals. “This business also further supports our efforts in sustainability, by focusing on applications that drive energy efficiency and lower energy usage, such as LEDs and solar cells.”



SEI To Produce First 2-inch Semi-Polar and Non-Polar GaN Substrates Japanese materials specialist Sumitomo Electric Industries will produce in volume semipolar and nonpolar gallium nitride (GaN) substrates for green lasers.

Sumitomo Electric Industries has developed production technology which will enable large scale production of 2-inch diameter semipolar/nonpolar GaN (gallium nitride) substrates for green lasers.

Following its successful development of green semiconductor lasers in 2009, Sumitomo Electric has been developing manufacturing technology for semipolar and nonpolar GaN substrates. These materials will improve the performance of green semiconductor lasers and white LEDs (light emitting diodes). These efforts have resulted in the development of manufacturing technologies that inhibit piezoelectric effects on polarized substrates, improving device luminous efficiency.

In general, semipolar and nonpolar GaN substrates are manufactured by vertically or diagonally slicing GaN crystals along the c-plane. However, this method results in relatively small crystals (rectangular crystals with dimensions on the order of several millimeters). The size of these materials has been a major obstacle to increasing the production scale of higher efficiency LED devices.

To overcome this limitation, Sumitomo Electric has developed H-VPE (hydride vapor phase epitaxy) manufacturing technology for large scale production

of 2-inch substrates. The substrates produced by this newly developed technology exhibit a dislocation density on the order of 105, comparable to that of the c-plane substrates now in use.

Seoul Semi & Vertex To Pioneer LED Technology The firms will jointly invest in LED technology development to create synergy effects from effective investments & asset management. Seoul Semiconductor, a global innovator in Light-Emitting Diode (LED) technology, has signed an agreement with Singapore-based Vertex Venture Management to jointly seek and invest in companies with advanced capabilities in the areas of LED technology development. Through this agreement, Seoul Semiconductor will leverage its world-leading expertise and deep experience in LED technologies to seek out high-potential companies and combine them with the capabilities of Vertex in sourcing and administering investment capital to achieve synergies for effective investment and returns. In addition, with subsequent expansion of investment opportunities, both companies may establish a dedicated fund to nurture the research and development efforts of technology companies that will drive future innovation in the LED and its related industries. “There are various LED-related new technologies and application companies engaged in R&D that have synergies with such new technologies in the world. We want to support these efforts at such companies. We expect that many global firms will seek to work with us. All such firms are invited to sign-up on the Investment Application section of our website,” said Brian Wilcox, VP of North American sales for Seoul Semiconductor. Vertex Venture Management is a venture capital firm that is a subsidiary of Vertex Venture Holdings, which is wholly owned by Temasek Holdings. Vertex is engaged in company investments and fund commitments throughout all of Asia and the U.S. Joo Hock CHUA, Chief Investment Officer of



Vertex said, “LED is an eco-friendly light source with significant growth potential in the middle- to long-term, and we intend to identify and invest into many more companies with strong technology potential going forward.” According to the LED market reports issued by IMS Research in the U.K. and Strategies Unlimited in the U.S., Seoul Semiconductor is the world’s fourth largest LED supplier, holding more than 5,500 patents. In particular, it claims to own the world’s leading LED technology and production capacity, such as deep UV LED and non-polar LED, as well as Acriche. At present, it provides high-quality LED products through 33 overseas branches (including three local corporations) and 150 domestic agencies.

Sumitomo First To Develop 6in GaN Substrates The substrates will be ideally suited for the production of white LEDs. Sumitomo Electric Industries has successfully developed what it claims is the world’s first 6in diameter GaN (gallium nitride) substrates to be used for white LEDs (light emitting diodes). Previously, the company led the world with the production of 2in GaN substrates for blue-violet lasers, which enabled production of the first Blu-ray DVD players. Sumitomo Electric began large scale production of 2in GaN substrates designed for use in white LEDs. It has also been developing larger diameter GaN substrates. The front face of the newly developed 6in GaN substrates is a polarized c-plane. Sumitomo Electric has ongoing development efforts to bring this material into large scale production and expects that these materials will find widespread use for both white LEDs and power devices.

Verticle claim world`s first hexagonal LED chip Verticle, Inc of Dublin, California has announced the world’s first hexagonal LED chip. HoneycombTM LED Chip, named after its hexagonal shape, is a vertically structured LED chip developed especially for high power LED applications.

It is expected to bring a higher chip count per wafer and better optical power over conventional square or rectangular type LEDs, said Dr. Mike (M.C.) Yoo, Company CEO.

A hexagonal LED chip yields multiple benefits around cost, efficiency, and beam profile. The first advantage of HoneycombTM is a higher chip count from the wafer since hexagon is the most closely-packed structure inside of a circular wafer. A wafer can yield 15% more haxagonal chips than square or rectangular chips of equivalent size. Second, hexagonal chip aids in the current spreading, with the resulting higher light output than conventional chips. Last but not least of the hexagonal chip’s advantage is the light output enhancement after packaging. HoneycombTM chip produces a beam profile which is much closer to the circular shape of circular lens used in optic design. In contrast, the beam profile of the typical square or rectangular chip, when combined with circular lens, is normally distorted.

Although hexagonal chip’s distinctive advantages over conventional chips are widely known, it has not been realized in production up to now. The main reason is the difficulty in chip separation with conventional scribing or dicing. However, chemical chip separation technique invented by Verticle Inc. makes the chip separation step much easier and quicker than conventional chip separation techniques. Verticle’s chemical chip separation is a highly innovative chip singulation technique that can chemically etch the street line, to easily produce chips of any shape. Moreover, with this technique, Verticle can handle multiple wafers in one batch, resulting in chip separation throughputs which are 500 times greater than with conventional chip separation methods.

Verticle, Inc is an LED chip company located in the Silicon Valley, with production facilities in Korea. Verticle specializes in manufacturing vertical type LED chips for BLU and LED lighting



using a patented Cu substrate and Chemical Chip Separation Technology.

Honeycomb Chips before separation ( Top Image) SEM Image of Separated Honeycomb Chip (Bottom Image)

PerkinElmer Launches Environmentally Friendly LED Fiber Optic The illuminator module is suited to endoscopy, surgical microscopy and headlamp applications and provides bright, uniform light. PerkinElmer, a global leader focused on improving the health and safety of people and the environment, is introducing its new LED Fiber Optic Illuminator Module. The new LED Module is designed for ease of integration by medical OEMs in endoscopy, surgical microscopy and headlamp applications. The LED Module (OTFI-0250) offers many advantages for the surgical environment including bright, highly uniform illumination, allowing surgeons

to see images more clearly in the operating room, leading potentially to better, earlier detection and diagnoses. The LED Module produces virtually no ultraviolet or infrared emissions. Its superior thermal management enables both high intensity light output and long life.

“Our new LED Fiber Optic Illuminator Module offers medical OEMs the latest advances in solid state lighting technology, helping speed integration, reducing time-to-market, and lowering costs of ownership,” said Joel Falcone, VP and general manager, Global Illumination, PerkinElmer. “We are pleased that our LED Module is both an environmentally-friendly product as well as one that delivers bright, uniform light for aiding surgical procedures and diagnoses.” The new Illuminator Module is based on LED technology with a usable life that is up to 50 times longer than conventional high-intensity-discharge (HID) lamps. In addition to patent-pending LED technology, the LED Illuminator Module incorporates precision optics, an integrated state-of-the-art thermal management system, and electromagnetic interference (EMI) shielding. It has both metric and imperial mechanical mounting fasteners and special flange-mounted optical alignment features for easier integration with an OEM’s own fiber coupling and is also RoHS-compliant. On August 31, 2010, PerkinElmer entered into an agreement to sell the Company’s Illumination and Detection Solutions (IDS) business to Veritas Capital Fund III, L.P., a New York-based private equity firm. The transaction is expected to close by the end of 2010 and is subject to customary closing conditions.



PerkinElmer is focused on improving the health and safety of people and the environment. The Company reported revenue of approximately $1.8 billion in 2009, has around 8,800 employees serving customers in more than 150 countries, and is a component of the S&P 500 Index. PerkinElmer designs and manufactures single or multi wavelength LED arrays with optics, photo sensors and custom filters to achieve targeted wavelengths for medical and analytical equipment. It covers visible, IR and UV wavelengths and provides capabilities for custom packages.

Seoul Semi LEDs Light Up 2010 Asian Games By producing the full spectrum of red, blue and green light, the firm’s Z-power LED produces 100 lumens/W @350mA which it claims has the industry’s highest luminous efficacy with a single die. Global LED provider Seoul Semiconductor (SSC) has announced that its Z-Power LED Series were installed as stage lighting at the opening ceremonies of the Asian Games 2010. The Guangzhou Games committee selected local SSC partner GOLDEN SEA Professional Equipment to provide the Z-power LED Series-embedded lighting solution, which played a vital role in illuminating the on-stage performances with exceptionally high-quality light, creating a fantastic visual experience. The win marks SSC’s continued growth in mainland China, one of the fastest growing LED lighting markets in the world.

With the added ability of generating pure, uniform white light that achieves 80 on the color rendering index (CRI), it creates outstanding evening visibility, comfort and safety. The Z-power Series is also extremely energy efficient, producing 100 lumens/W @350mA, achieving what it claims is the industry’s highest luminous efficacy with only a single die. It also contains no toxic substances such as mercury, emits no harmful IR or UV rays, and cuts down dramatically on energy-based CO2 production. This makes it a perfect fit for the theme of this year’s Asian Games, “high-tech, energy saving, going green.” And, since the Z-power LED-embedded stage lights last 100,000 hours—over 130 times more than conventional lighting—maintenance costs can be significantly reduced. “As a leading supplier of high-quality lighting in mainland China, we strive to bring the most advanced, most value-added lighting solutions to our customers,” said Zhang Wei Kai, president of Golden Sea. “The Asian Games is one of the largest events in China this year, and I am sure our partnership with Seoul Semiconductor was instrumental in enabling us to secure this monumental win. Their LED lighting products are best-in-class, featuring excellent technology, energy efficiency, and are completely safe for the environment. It is always a pleasure working with them, and we are looking forward to tightening our relationship in the future.” Brian Wilcox, VP of North American sales for Seoul Semiconductor, said, “Seoul Semiconductor is proud to see that Z-Power Series RGB LED powered lighting was selected for the stage lighting at the opening ceremonies of the Asian Games. Featuring rich color, the Z-power Series provides exceptionally consistent lighting for a more pleasant viewing experience, and improves visual detail. Because it is also extremely energy efficient, long lasting, and safe for the environment, it is the best lighting solution for many different kinds of general lighting applications.” SSC LED lighting has made groundbreaking appearances around the world, including at Paris’s most famous landmark, the Eiffel Tower. Bringing its world-class technologies to China, SSC continues to demonstrate a deep commitment to providing the



region with safer, more efficient and more beautiful LED solutions, highlighted by their extensive use at the 2008 Beijing Olympic Games. Golden Sea Professional Equipment Limited is China’s fastest and biggest growing professional stage lighting and LED Display equipment manufacturer and markets its own products under the brand name TERBLY. According to the LED market reports issued by IMS Research in the U.K. and Strategies Unlimited in the U.S., Seoul Semiconductor is the world’s fourth largest LED supplier, holding more than 5,500 patents. In particular, it owns the world’s leading LED technology and production capacity, such as deep UV LED and non-polar LED, as well as Acriche. At present, it provides high-quality LED products through 33 overseas branches (including three local corporations) and 150 domestic agencies.

Aixtron MOCVD Tools Accelerate Changelight´s Expansion in China The AIX 2600G3 IC and AIX 2800G4-R multiple systems will be used for red-orange-yellow (ROY) high brightness LED production.

Aixtron has a new order for several MOCVD reactors from Changelight.

The order comprises several AIX 2600G3 IC in a 49x2-inch wafer configuration and a double digit number of AIX 2800G4-R 60x2-inch configuration deposition systems. After delivery of the systems between the fourth quarter 2010 and the second quarter of 2011, they will be used for red-orange-yellow (ROY) high brightness LED production.

The Aixtron China support team will install and commission the new reactors in the Changelight epitaxy facility at its mainland China production plant.

Xiang Wu Wang, General Manager Changelight, comments, “Since 2006, we have been exclusively working with Aixtron using their reliable technology with outstanding success. Consequently, it was a straightforward decision choosing their systems

when assessing the best solution to carry out our planned increase in production capacity. This time it will be the combination of the AIX 2800G4-R and AIX 2600G3 IC systems. These will give us good economics through very low source material cost overhead. The G4 systems will provide the desired high throughput for our ROY LED requirements.”

Changelight´s quaternary alloy AlGaInP LED epitaxial wafer and chip have a very high standing as leading-edge products by virtue of their excellent uniformity, consistency and reliability. They are comparable to the best from the leading domestic manufacturers in terms of scale, output and sales with wide application in digital, dot matrix, full-color screen displays as well as traffic lights.

Wang continues, “Changelight plans to reach the number one position amongst mainland China GaAs LED companies and longer-term we want to achieve success in overseas markets. The new reactors coupled with the high quality Aixtron support service will ensure that we reach our targets according to plan.”

Purdue gets $4.88 Million Grant to Study LED Lighting of Plants The USDA Award will include $2.44 million from the USDA and an equal amount of in-kind contributions of equipment and services from industry partners. The project is titled “Developing LED Lighting Technology and Practices for Sustainable Specialty-Crop Production.” U.S. Department of Agriculture representatives toured Purdue University greenhouses on Monday (Oct. 25) to get a preview of the work that will come from a $4.88 million grant for LED lighting research. Cary Mitchell, a professor of horticulture and project director for the grant, said Purdue researchers will collaborate with Rutgers University, the University of Arizona, Michigan State University and Orbital Technologies on the four-year project to improve and evaluate LED lighting for greenhouse use. The goal is to increase greenhouse yields and decrease producers’ energy costs.



“The high-intensity discharge lamps used today are inefficient. When you have acres and acres of greenhouses with these lamps in them, it really adds up,” Mitchell said. “With LED lighting, we should be able to do as well or better with much less energy.”

The USDA Specialty Crops Research Initiative Award will include $2.44 million from the USDA and an equal amount of in-kind contributions of equipment and services from industry partners. The project is titled “Developing LED Lighting Technology and Practices for Sustainable Specialty-Crop Production.” USDA officials, including Deputy Secretary Kathleen Merrigan, toured greenhouses with prototype LED lights like the ones that will be used in the research. “The specialty crop industry plays an enormously important part in American agriculture and is valued at approximately $50 billion every year,” Merrigan said. “These projects will be key to providing specialty crop producers with the information and tools they need to successfully grow, process, and market safe and high-quality products.” Mitchell’s work will include testing LED lighting on high-wire tomatoes. Those plants can grow taller than 20 feet, and traditional overhead lighting doesn’t reach the lower parts of many plants. Mitchell believes that using LED lights on the sides of plants will increase photosynthesis and flowering, improving yield. Roberto Lopez, an assistant professor of horticulture, will work with about 20 species of bedding plants to test LED lighting’s ability to lower the cost of establishing new plants from cuttings

and seeds. Low winter light means growers currently have to use more expensive overhead lighting to establish new plants. John Burr, a lecturer in Purdue’s Krannert School of Management, will evaluate the costs and benefits associated with LED lighting. A.J Both at Rutgers will be responsible for developing best practices and standards for testing commercial LED lighting. Chieri Kubota at the University of Arizona will test the best wavelengths and colors for LED lighting to establish vegetable transplants, and Erik Runkle at Michigan State will test flower initiation of ornamental crops with different colors of LEDs, as well as performing project outreach. The researchers are partnering with Robert Morrow and C. Michael Bourget of Orbital Technologies Corp. of Madison, Wisc., which will build the LED lights. Later phases of the research will include evaluating LED lighting in commercial settings and developing improved LED lights that match the needs determined from those tests.

Nichia Files Patent Infringement Against Harvatek The service of complaint against Harvatek was filed on November 9, 2010. On September 8, 2010, Nichia Corporation filed a patent infringement lawsuit in Germany at the District Court Düsseldorf against Taiwanese LED manufacturer, Harvatek. In this lawsuit, Nichia is seeking an injunction, damages and recall against two different white LED products (serial numbers HT-V116TW and HT-U158TW) manufactured by Harvatek, which Nichia believes infringe its patent (EP936682[DE69702929]).



Peter Wolters Reduces LED Substrate Polishing Time by Half2010-11-10 The firm says its new polishing slurry for C-plane sapphire substrates does not require any exceptional processes or procedures beyond what is typical to conventional colloidal silica. Peter Wolters is introducing to the LED market a new polishing slurry that has demonstrated a 50% reduction in the time required to complete final polishing for flip chip or through substrate LED’s.

The new Peter Wolters slurry reaches the surface roughness endpoint in half the time compared to the standard colloidal silica slurry. This development utilizes a combination of chemical and abrasive technologies to decrease the cost of ownership or the manufacturing cost of the LED when manufactured on C-plane sapphire. “As demonstrated by our testing, the time required to achieve a comparable final surface finish has been reduced by half in substrates of identical incoming quality”, said David Suica, President of Peter Wolters of America, the Peter Wolters Competence Center for Sapphire Polishing. The quality and clarity of the final polished surface is comparable with the utilization of colloidal silica, which is commonly utilized in the final polishing step. This quality slurry product is completely mixed and tested by the Peter Wolters in-house professional team of scientists and engineers to maintain the highest levels of consistency and quality. The

premixed slurry is shipped in a concentrated form, which can be easily thinned to the proper point of use consistency by adding DI water. Handling and storage of this custom slurry does not require any exceptional processes or procedures beyond what is typical to common colloidal silica. Peter Wolters of America is a subsidiary of Peter Wolters GmbH, a manufacturer of high precision machine tools, headquartered in Rendsburg, Germany. Peter Wolters of America provides a complete line of high quality machine tools, OEM spare parts, accessories and factory trained service engineers.

Cree LED Module Achieves Title 24 Compliance The 120V LMR4 LED module has achieved California Title 24 registration ; this will simplify LED fixture design and speed up time to market. Cree, a market leader in LED lighting, has announced that its 120V LMR4 LED module has achieved California Title 24 registration. This will help OEM lighting manufacturers meet California’s rigorous energy efficiency standards and quickly enter the LED lighting market with fixtures based on the industry-leading Cree TrueWhite Technology or Cree EasyWhite solution. Cree is also extending the warranty on its LMR4 LED module family to five years. “California leads the nation in promoting sustainable, energy-efficient building codes, and the growth of solid-state lighting is critical to achieving energy-saving goals and policy objectives,” said Michael Siminovitch, director of the California Lighting Technology Center (CLTC) at the University of California, Davis. “Cree has been a leader in the LED lighting industry, and further advances to its technologies will allow lighting manufacturers to address the energy-efficiency needs of California consumers.” “Lighting manufacturers have already demonstrated the ease of developing LED fixtures based on the Cree LMR4 module,” said Tom Roberts, Cree, director of marketing, LED modules. “Based on our continued testing and customer design successes,



Cree is extending the LMR4 warranty from three years to five. We believe this provides even greater confidence in the business case for high-quality LED lighting.” The Cree LMR4 LED module, available with either Cree TrueWhite Technology or the Cree EasyWhite solution, uniquely integrates driver electronics, optics and primary thermal management. Both versions deliver 700 lumens, are designed to last 35,000 hours and consume just 12 watts of power. Fixture manufacturers have the option to include a specially designed heat sink to accommodate specific high heat applications such as downlights for insulated ceilings. The 120-volt LMR4 module is UL recognized, and the 230-volt LMR4 module complies with multiple international standards. Fixture makers seeking ENERGY STAR qualification will have access to specifications and performance data, including LM-80 reports, which can speed regulatory approvals. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications. Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.

Rubicon Makes First Sapphire Boule at New Illinois Facility The new facility based in Batavia responds to increasing demand for high quality, high yield large diameter sapphire wafers worldwide. Rubicon Technology, a leading provider of sapphire substrates and products to the LED, RFIC, semiconductor, and optical industries, has produced its first sapphire boule in its newest facility in Batavia, Illinois.

The new 135,000 square foot sapphire crystal manufacturing facility was established to increase capacity to support the growing demand for LEDs (light emitting diodes) in the consumer electronics and general lighting industries. “Demand for high quality sapphire substrates is high as industries ranging from consumer electronics to general and architectural lighting have tapped LEDs as a light source for their next generation products,” said Raja Parvez, Rubicon President and CEO. “Rubicon’s industry-leading capacity to deliver high quality, high yield, large diameter sapphire wafers will help satisfy the great volumes of sapphire needed to satisfy growing demand for LEDs. This is especially important as the demand for LED-based light bulbs grows with worldwide consumer adoption.” Market research firm iSuppli expects the global LED market to nearly double to nearly $14.3bn by 2013 driven by the penetration of LEDs into the general illumination market including light bulbs. Government regulators worldwide looking to save energy are driving the move to LED light bulbs. LEDs have emerged as a preferred replacement for incandescent bulbs for their durability, energy efficiency, enhanced aesthetics, and low-voltage operation versus less clean options like compact fluorescent bulbs that contain mercury. As the global leader in the manufacture of exceptional quality sapphire, Rubicon’s ability to cost-effectively produce low-defect, large diameter sapphire wafers is critical to making the production of high quality, affordable LED-based products. The transition to large diameter wafers already has begun. For example earlier in 2010, Rubicon announced that the company entered into a $71 million agreement with a major LED chip manufacturer for which Rubicon will provide six inch polished substrates. Rubicon’s expansion in the US demonstrates the company’s leadership in the sapphire industry worldwide. Once produced in the US, the sapphire substrate is sold to manufacturers in Asia for the use in LED-based electronics and lighting products. The new Rubicon facility is located in Batavia, Illinois in the Chicago Metropolitan area near Rubicon’s Franklin Park and Bensonville facilities. The company held a celebration of the first boule off the production line in the Batavia facility on Friday,



November 5, 2010 Rubicon Technologyis an advanced electronic materials provider that is engaged in developing, manufacturing and selling monocrystalline sapphire and other crystalline products for light-emitting diodes (LEDs), radio frequency integrated circuits (RFICs), blue laser diodes, optoelectronics and other optical applications.

Osram ‘s OSTAR LEDs Put Predecessors in the Shade The firm says only four OSTAR Lighting Plus units are needed to replace a frosted 100 W incandescent lamp with a color rendering index of 80.

OSTAR Lighting Plus is the new power pack from Osram Opto Semiconductors, providing a large amount of light from a small area and putting its predecessors firmly in the shade in terms of efficiency. With its impressive brightness and color stability this high-power LED can be used without any problems in retrofits for incandescent lamps or halogen lamps. It contains four chips fabricated in state-of-the-art UX:3 chip technology and emits either cold white or warm white light.

An efficient replacement for incandescent lamps, the new OSTAR Lighting Plus offers

impressive brightness and high color stability in different white tones.

The LED has a brightness of 425 lm (5700 K to 6500 K) or 365 lm (2700 K to 4000 K) at an operating current of 350 mA. This corresponds to a typical efficiency of around 100 lm/W or around 80 lm/W.

“OSTAR Lighting Plus is also very efficient at higher currents and offers high light output thanks to the extremely uniform flux distribution over the entire chip surface,” said Andreas Vogler, Marketing Manager General Illumination (SSL) at Osram Opto .“The greater brightness level per chip area makes the OSTAR Lighting Plus ideal for applications where space is tight, such as LED luminaires and retrofits.”

Homogenous white light is ensured by an ANSI-compatible binning system with finely graded classes. The LED is easy to handle thanks to its SMT compatibility.

With a power draw of less than 5 W the warm white OSTAR version produces 365 lm – and from only four chips – which is much brighter than a 25 W incandescent lamps which manages only 220 lm. Energy savings of more than 80% can therefore be made despite a luminous flux that is 65% higher – a major contribution to energy-efficient lighting.

Only four OSTAR Lighting Plus units are needed to replace a frosted 100 W incandescent lamp. And a color rendering index of 80 is no less impressive.

The applications for the new power LED cover interior lighting for shops, offices and homes, including many applications that require strong directional light from a small unit, such as spotlighting. The small dimensions of OSTAR Lighting Plus also make it ideal for applications that are currently being served mostly by halogen lamps.

Osram Opto Semiconductors, a subsidiary of Osram offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications. The firm has production sites in Regensburg (Germany) and Penang (Malaysia). Its headquarters for North America are in Sunnyvale (USA), and for Asia in Hong Kong.



Get ready for a mature HB LED industry Fast moving sector starts discussions on possible common material characteristics, automation requirements to be ready for the future. Driven by rapid progress in technology, fast growth in display backlighting markets, and a potentially huge market for general lighting about to come, the high brightness LED sector is hurtling towards becoming a more mature volume manufacturing industry within the next few years. Though companies will of course maintain their unique core processes, the mature high volume manufacturing business will also require some changes, towards efficient supply chain management, towards more automation and towards more emphasis on tuning a controllable manufacturing process for consistent high yields.

The industry is maturing very fast, much faster than the IC industry did, as it can learn from that experience,” says Iain Black, Philips Lumileds VP of Worldwide Manufacturing Engineering & Innovation. “This is becoming a serious business. In the future we expect that with a smaller number of key players and a consolidating supply base, some of the custom variation will have to come out of industry. That will require standards, and they will need to be defined early enough to avoid delaying the development of the market, perhaps not in 2011,

“I see standards as somewhat inevitable,” adds Black, noting that it won’t be realistic to keep using all bespoke materials. “So it’s important to be involved in the process to have some input. It’s time to get the conversation started around what might be possible.”

Common ground in consistent input materials

One key area of common ground is the characterization of incoming materials. Consistent measurement of purity for chemicals and benchmarks for LED grade materials like indium, gallium and metal hydrides, which all differ a bit from supplier to supplier, could be a start, and might not be too difficult because there are a limited number of suppliers. Substrate standards are typically a first step, but with the radically different processes used by major makers, some argue that even agreeing on a common thickness for 150mm sapphire wafers will be difficult. But others counter

that one thinner ~1mm standard for those who thin the wafer down and prefer a thinner substrate, and another thicker ~ 1.3mm standard for those who remove the epi layer and prefer a thicker substrate, could probably handle most production needs, while doing away with much of the individual customization, enabling efficient supply chain management.

Consistent measuring methods will help get more die in high value bins

Another key area for potential gain from consensus on best practice is metrology and test.

As the HB LED sector matures, and moves from the realm of the development engineer to the manufacturing engineer, it will begin to move away from its current focus on volume, to focus more on control of the established manufacturing process, and begin to pay more attention to the operational benefits of yield, identifying and tracking yield issues as early in the process as possible. But the process is currently hindered by everyone measuring different things in different ways. To measure something as basic as wavelength uniformity on the wafer, for example, some LED makers use electroluminescence tests, others use photoluminescence tests, some measure peak wave length, and others measure dominant wavelength--and all of those give different results. “If everyone could agree on one of those measures as best practice, it would get everyone talking about the same issues,” argues Veeco’s Quinn.

Materials, substrates, automation and metrology are usually the first areas to standardize as an industry matures, says Semilab’s Chris Moore, noting the accelerating speed with which some other sectors have moved up to consistent volume manufacture. The solar industry, which also differentiates on process IP, was skeptical of manufacturing standards several years ago, but has now embraced standards with amazing rapidity. Now two years in to starting standards discussions, there are now some 400 photovoltaic industry experts working to facilitate efficient volume manufacture, starting with coming to a consensus on the best measurement methodology for purity and setting benchmarks to define PV grade materials, and agreeing on carrier and equipment interfaces to facilitate automation.



Get ready for automation

Though small wafers, cheap labor and long batch processes have limited the need for automation so far, the LED industry is transitioning to more and more automation as it goes to larger wafers and higher volumes. Robotic wafer handling, automated glove boxes, interbay automation, mini-environments and standardized carriers such as SMIFS are all technologies that will become pervasive in LED fabs of the future, argues Clint Haris, senior VP of the Systems Solution group at Brooks Automation. He points out that LED makers are starting to look towards automation to improve yields and traceability. “The industry is rapidly evolving from manual operation to fully automated factories,” he says, noting that the LED industry has seen change in the last five years that took 40 years in the semiconductor industry. “Things are moving so quickly, standards need to focus on the leading edge, 6-inch wafers, 6-inch cassettes, and some sort of wafer or carrier-level identification for traceability as the basics to enable automation.”

Packaged LED market expected CAGR of 28.2% between 2009 & 2015 Yole Développement and EPIC announce the publication on 15 November 2010 of their new market & technological studies dedicated to LED market and manufacturing technologies:

Status of the LED industry “SLI 2010”, 2008 – 2020 analysis LED Manufacturing Technologies “LED ManTech 2010”

This comprehensive survey describes the main market metrics and manufacturing technologies implementing broad adoption of Solid State Lighting.

The packaged LED market is experiencing tremendous growth with an expected CAGR of 28.2% between 2009 and 2015. In their base scenario, revenues will reach $8.9b in 2010 and grow to $25.7b in 2015 and close to $30b in 2020.

In terms of volume, LED die surface will increase from 6.3b mm2 to 51b mm2 in 2015, a 41.6%

CAGR. This will prompt substrate volumes to growth from 12.7M TIE (Two Inch Equivalent) in 2009 to 84.4M TIE in 2015, a 37.1% CAGR (smaller than the die surface increase due to significant manufacturing yield improvements). The equipment market will experiment a dramatic growth cycle with demand driving the installation of close to 1400 reactors in the 2010-2012 period.

“Anticipation of future demand and generous subsidies in China will trigger the installation of another 700-1000 reactors in the same period, leading to a short period of oversupply starting in late 2011. However, this oversupply will mostly affect the low end of the market.”, explains Tom Pearsall, EPIC.

Growth in general lighting applications will be enabled by significant technology and manufacturing efficiency improvements that will help to lower the cost per lumen of packaged LED to be reduced 10 fold between 2010 and 2020: Economies of scale, LED efficiency improvement, including at high power (droop effect), Improved phosphors, Improved packaging technologies, Significant improvements in LED epitaxy cost of ownership through yield and throughput. However, additional breakthroughs’ are needed; Haitz’s Law is not enough.

Eulitha Writes a New Story with PHABLE Technology for LED & Solar Markets The Swiss Firms’ patented mask based UV lithography enables the formation of periodic nanostructures over large areas for applications such as LEDs and solar cells. It avoids contact between the mask and the wafer and does not require consumable soft-stamps. Eulitha, a Swiss based nanolithography company, has developed a proprietary photolithography technology for low-cost and high-throughput fabrication of photonic nanostructures. This solves a major ongoing problem faced in the fabrication of high-resolution photonic structures since standard photolithography equipment either lacks the required resolution or its cost is



prohibitively high. The patented technology enables the formation of periodic nanostructures over large areas for such applications as LEDs, solar cells and flat-screen displays.

The new technology, dubbed PHABLE (for Photonics Enabler), is a mask based UV lithography. Unlike currently available technologies, the PHABLE system forms an image that has practically unlimited depth of focus.

Therefore non-flat substrates, such as LED wafers, can be patterned uniformly and reproducibly. It also allows combinations of different patterns such as linear diffraction gratings and arrays of holes on hexagonal or square grids to be printed using a single exposure onto a chip or a wafer. The resolution of the printed features can be as small as one quarter of the illumination wavelength. The masks required by PHABLE can be produced inexpensively using standard chromium-on-quartz mask-writing technology. Photonic crystals needed for enhancing the light extraction efficiency of LEDs is one of the major applications of the new technology. Unlike the

Nanoimprint method that is commonly employed for this purpose, it avoids contact between the mask and the wafer, and it does not require consumable soft-stamps. Therefore an expensive two-step process is avoided. It is expected that other applications will also benefit greatly from this development, including nanowire-based LEDs and photovoltaic devices, heteroepitaxy on patterned silicon substrates and epitaxial lateral overgrowth (ELO) used in blue-ray lasers. Wire-grid polarizers, as required for both LCD displays and projectors, may also be produced with the PHABLE technology. The compatibility of PHABLE with conventional masks and UV- exposure processing will ensure a smooth adoption of PHABLE by the industry. Standard photoresists with suitable resolution and etch properties are available from multiple vendors. Therefore, HB-LED and other device manufacturers will be able to rely on the usual, well-established sources for obtaining the required consumable materials so as to ensure a low-cost manufacturing process for their photonic nanostructures. Eulitha now offers samples and wafer batch processing services to companies and researchers developing nanostructure-based products who are interested in taking advantage of this breakthrough technology. It is also currently offering laboratory lithography tools for 2”-4” wafers that are suitable for product development. High-volume production tools with throughput in excess of 100 wafer-per-hour will be made available to manufacturers in the near future. Eulitha expects many future photonic devices to shine even brighter with the introduction of the PHABLE technology.

Eulitha is a spin-off company of the Paul Scherrer Institute, Switzerland. It specializes in the development of lithographic technologies for applications in photonics, biotech, patterned magnetic media and EUV optics. It produces and markets nano-patterned samples and templates using its unique EUV interference method and state-of-the-art e-beam lithography tools. PHABLE is the brand name of its new photolithography platform, which includes exposure tools and wafer patterning services.



Air Products to Build Large-Scale Specialty Ammonia Plant The world’s first on-site gas plant will supply ultra-high purity ammonia for LED manufacture in China. Air Products has signed a contract with Anhui Sanan OptoElectronics to build two on-site ammonia (NH3) plants at Sanan’s new high brightness light emitting diode (LED) manufacturing facility in the Wuhu Economic and Technological Development Area, Anhui Province, China. These new facilities, which will supply ammonia with state-of-the-art purity to Sanan OptoElectronics, will be the first and largest on-site specialty gas plants in the world. Each plant Air Products is building will be capable of supplying 2,000 metric tons per year. Large volumes of NH3 are needed to provide the nitrogen source for the gallium nitride layers used in the manufacture of LEDs. Air Products currently supplies Sanan OptoElectronics’ two other LED facilities in China. “We are pleased Sanan OptoElectronics chose Air Products for their high purity ammonia needs at Anhui,” said Corning Painter, vice president and general manager, Electronics, for Air Products. “At these volumes, Air Products is the only company providing ammonia with the purity at the source necessary for LED production.” Air Products has a long history of building on-site industrial gas plants. In fact, the company pioneered the process in the 1940s. Since then, it has been building on-site facilities serving the refining, chemicals, steel and glass making industries around the world.

EVG’s New SMS-NIL Technology Achieves Ultra-High-Resolution Patterning The firm’s Soft Molecular Scale Nanoimprint Lithography (SMS-NIL) technology can be used on patterning of features down to 12.5 nm. EV Group (EVG), a leading supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today unveiled a new technology capability that enables ultra-high-resolution patterning of features down to 12.5 nm: Soft Molecular Scale Nanoimprint Lithography (SMS-NIL). Based on EVG’s proven UV-NIL systems, SMS-NIL provides customers with a repeatable, cost-effective process for producing ultra-high-resolution patterning on large-area surfaces. Using the new technology’s soft working stamp nanoimprint process, customers can perform full-area nanoimprints and optically aligned UV-NIL on existing EVG equipment. Likewise, the stamp and imprinting can be processed on the same tool without requiring additional processing steps saving customers significant processing time and money. UV-NIL offers a significantly lower processing cost than other nano-patterning techniques, making it an attractive solution for CMOS image sensors, micro lens molding and other optical applications where the technology is already being used. SMS-NIL takes this approach a step further, employing soft polymeric working stamps to avoid damaging costly master stamps. The stamp material’s inherent properties greatly reduce the risk of mechanical damage to master templates, thus extending their lifetime. The working stamps’ relatively low surface energy facilitates separation from the substrate after the imprinting process, while their flexibility allows the stamps to be used for multiple imprints. Gerald Kreindl, product manager for nanoimprint lithography at EV Group, said, “For more than 10 years, we have maintained a strong technology focus on nanoimprint lithography and hot embossing. SMS-NIL is the culmination of our efforts to address customers’ challenges in this



area by creating the ultra-high-resolution patterning they need in a process that is repeatable and shows great promise for cost-effective high-volume manufacturing. This new technology capability is another step in EV Group’s mission to enhance our existing technology solutions while pursuing cutting-edge research and development for new products and applications. This technology introduction is also an important step in commercializing nanoimprint lithography as a low-cost, high-throughput, ultra-high-resolution lithography technique.” EV Group offers two flexible purchase options for SMS-NIL. Customers who are interested in producing the working stamps in-house may purchase EV Group’s process technology consultancy services to enable their own application development. EV Group also offers the option of purchasing working stamps ready for processing. The new technology is compatible with EVG’s proven UV-based imprinting systems, including the EVG620, EVG6200, IQ Aligner and EVG770. EV Group (EVG) is a world leader in wafer-processing solutions for semiconductor, MEMS and nanotechnology applications. Through close collaboration with its global customers, the company implements its flexible manufacturing model to develop reliable, high-quality, low-cost-of-ownership systems that are easily integrated into customers’ fab lines. Key products include wafer bonding, lithography/nanoimprint lithography (NIL) and metrology equipment, as well as photoresist coaters, cleaners and inspection systems. In addition to its large share of the market for wafer bonders, EVG holds a leading position in NIL and lithography for advanced packaging and MEMS. Along these lines, the company co-founded the EMC-3D consortium in 2006 to create and help drive implementation of a cost-effective through-silicon via (TSV) process for major ICs and MEMS/sensors. Other target semiconductor-related markets include silicon-on-insulator (SOI), compound semiconductor and silicon-based power-device solutions. Founded in 1980, EVG is headquartered in St. Florian, Austria, and operates via a global customer support network, with subsidiaries in Tempe, Ariz.; Albany, N.Y.; Yokohama and Fukuoka,

Japan; Seoul, Korea and Chung-Li, Taiwan. The company’s unique Triple i-approach (invent - innovate - implement) is supported by a vertical integration, allowing EVG to respond quickly to new technology developments, apply the technology to manufacturing challenges and expedite device manufacturing in high volume.

AMO and SUSS MicroTec Collborate in Development of Nanoimprinting Using UV-SCIL The new technology can be implemented in material and tool processing of LEDs and VCSELs and diffractive and refractive optical elements. AMO, a private research service provider in the field of nanofabrication, and SUSS MicroTec, a leading supplier of equipment and process solutions for microstructuring in the semiconductor industry and related markets, are working on the development of applications for SCIL (Substrate Conformal Imprint Lithography) with UV curing material. SUSS MicroTec’s SCIL imprint method for sub-50 nm structures optimizes standard imprinting processes for wafers up to 6 inch area full-field imprinting. High resolution nanoimprinting – so far limited to small wafer sizes – can now be successfully applied to large substrates. Large-area soft stamps with repeatable sub-50 nm printing capability do not cause any stamp deformation or even damaging as no contact force is applied and soft, flexible material is used. When used with UV curing materials SCIL is able to combine a high resolution with a high throughput. SCIL can be used with a large variety of well-known materials that are commonly used in UVnanoimprinting processes. AMO has provided two key components for this development: the master for large area nanostructures and the UV curing nanoimprint material AMONIL. The masters, with a size up to 6 inch, are fabricated at AMO by laser interference lithography and



plasma etching in Silicon. They have perfect binary periodic patterns between 180 to 2.500 nm. These holographic gratings are characterized by absolutely seamless patterns and a low defect density on a large area, due to a special fabrication technology.

Hundreds of flexible stamps can be replicated from only one master. With SCIL-technology the large area stamp is brought into contact with the AMONIL resist, which is thereafter cured with UV light. The resist material has already been optimized by AMO for the implementation of Quartz- and soft PDMS-stamps in conventional imprint processes. The imprint resist material is distributed by AMO with a standard thickness from 100 to 800 nm. Due to the unique sequential contacting and separation technology a distortion free replication of the stamp at high throughput is now possible with UV-SCIL. By unifying the competences of each partner the UV-SCIL method from this successful cooperation could be demonstrated on a large scale. AMO´s and SUSS MicroTec´s customers are now offered the master, material and tool process technology for application developments, such as in the field of LED/VCSEL, diffractive and refractive optical elements, pattern magnetic media or functional material as well as printed electronics or RFIDs. AMO, as a research company, realizes nanofabrication technologies for applications in the field of information technology, biotechnology and photonics. AMO´s services range from the development of lithography technologies, such as UV-nanoimprint, to processing solutions as part of feasibility studies and even to small batch production. Transfer of technology, based on its own wide set process platform with CMOS-compatibility, also belongs to AMO´s services. SUSS MicroTec, is a leading supplier of equipment and process solutions for microstructuring in the

semiconductor industry and related markets. In close cooperation with research institutes and industry partners SUSS MicroTec is contributing to the advancement of next-generation technologies such as 3D Integration and nanoimprint lithography as well as key processes for MEMS and LED manufacturing. With a global infrastructure for applications and service SUSS MicroTec supports more than 8,000 installed systems worldwide. SUSS MicroTec is headquartered in Garching near Munich, Germany.

Epistar AlGaInP LED Breaks Efficacy Record by 26% The company says that its latest record was reached in the new generation of Aquarius-series chips and reaches 168 lm/W at a dominant wavelength of 610 nm driven by a 20mA current.

Epistar says that it has successfully developed a new generation of Aquarius-series AlGaInP LEDs emitting at an efficacy claimed to be 26 % higher than the previously announced record on March 15, 2010.

The new record was set by a 0.36mm x 0.36 mm chip in the Aquarius-series and reaches 168 lm/W at a dominant wavelength of 610 nm driven by 20mA current (180 lm/w at 6mA). Applying Epistar Lab’s novel light-extracting technology, the new Lambertian transmission has been demonstrated to increase the efficacy from 133 lm/w to 168 lm/w.

Fig. 1: New generation of Aquarius-series chips have higher efficacy and lower forward voltage as compared to previously announced AX14.


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Figure 1 shows the new generation of Aquarius-series chips with higher efficacy and lower forward voltage as compared to the previously announced AX14. The chip has a horizontal structure and is designed to satisfy chip-on-board packages for lighting applications which require multiple chips in series on nonconductive substrates.

Epistar says this world-leading performance promises to make these small chips a preferred choice for outdoor display, and RGB BLU applications. Furthermore, this advance should allow exceptional warm white LED solutions with higher efficacy and a better color rendering index to be provided via color mixing than can be achieved through conventional conversion of blue LEDs with phosphors.

So far, this new generation of Aquarius-series AlGaInP LED has been primarily demonstrated in Epistar Labs, but plans are already in motion to transfer the technology to Epistar’s product line.

Epistar Labs will continue to develop higher efficacy of its AlGaInP LEDs enabling lighting solutions with both high CRI and high efficacy warm white light for lighting applications as well as high performance in RGB BLU.

Tongfang selects AIXTRON MOCVD systems AIXTRON AG today announced a new order for two AIX 2800G4 HT 42x2-inch configuration deposition systems from Tongfang.

The PR China based company placed the order during the first quarter of 2010 and after delivery in the third quarter of 2010, they will be used for GaN ultra-high brightness (UHB) blue LED production. The local AIXTRON support team will be responsible for the installation and commissioning of the new reactors at the dedicated Tongfang production plant. Prof. Liu Gang, General Manager of Tongfang Opto, comments, “Our company is seeking to carry out a major production capacity increase for our high-brightness blue gallium nitride LED devices. The AIXTRON AIX 2800G4 HT system is a perfect match for these requirements. Through our close relationship with AIXTRON we have built up great confidence not only in the quality

and performance of their equipment but also in their support and service.” www.aixtron.com

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CEA-Leti Creates Record-Breaking HgCdTe Array Designed for defense and security applications, the infrared (IR) imaging array achieves sensitivity close to one-thousandth of a degree Kelvin. CEA-Leti has revealed what it claims is the first infrared imaging array in the 8-10µm band capable of returning an image with a record-breaking minimum temperature difference. With a thermal resolution, of 1 to 2mK at ambient temperature and with traditional image cadences of 25-50 Hz, Leti also created an infrared detection array by linking an innovative reading circuit, manufactured using CMOS-silicon technology, to an array of HgCdTe infrared (IR) detectors. Designed for defense and security applications, the HgCdTe array has a format of 320 x 256 and a pitch of 25µm. The array achieved ultimate sensitivity of close to one-thousandth of a degree Kelvin at an operating temperature of 77K. It represents 10-20x increase in sensitivity compared with what is normally possible under the same observation conditions with conventional components. To obtain this extremely high sensitivity, CEA-Leti designed and produced a special silicon reading circuit with a 0.18µm CMOS die, involving an analog-to-digital conversion at each elementary detection point with a pitch of 25µm. The analogue-to-digital conversion is based on the counting of charge packets given off by the detector. An equivalent stored charge of 3 giga-electrons can be obtained. This reading circuit, which is noise-optimized, thus makes it possible to

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achieve a level of sensitivity never before obtained on a component of this class. CEA-Leti presented these results at the international Defense, Security and Sensing conference Orlando, Fla., US, and as part of an invited paper at the international SPIE Defense and Security conference in Toulouse, France, this year. These results are the fruit of research carried out in a joint Sofradir-CEA (DEFIR) laboratory, with support from CEA, Sofradir, DGA and Onera. Sofradir is producing the HgCdTe infrared detector technology developed by CEA-Leti under exclusive license from CEA. CEA is a French research and technology public organization, with activities in four main areas: energy, information technologies, healthcare technologies and defense and security. Within CEA, the Laboratory for Electronics & Information Technology (CEA-Leti) works with companies in order to increase their competitiveness through technological innovation and transfers.

Keithley Instruments Shareholders Approve Merger Agreement Upon completion of the merger, each outstanding common share and Class B common share of Keithley will be converted into the right to receive $21.60 in cash, without interest. Keithley Instruments, a leader in advanced electrical test instruments and systems held a special meeting of shareholders last week. The Company’s shareholders approved and adopted the Agreement and Plan of Merger, dated September 29, 2010, between Danaher Corporation, Aegean Acquisition Corporation and Keithley Instruments. Approximately 90 % of the total number of votes represented by the common shares and Class B common shares outstanding and entitled to vote at the special meeting voted in favor of approval and adoption of the merger agreement. Under the terms of the merger agreement, upon completion of the merger, each outstanding common share and Class B common share of Keithley will be converted

into the right to receive $21.60 in cash, without interest. The completion of the merger remains subject to the termination or expiration of the waiting period under the Hart-Scott-Rodino Antitrust Improvements Act (the HSR Act) and the satisfaction or waiver of other conditions. Keithley Instruments also announced that Danaher refiled its HSR Act Premerger Notification and Report form related to the merger on November 15, 2010 to provide the Federal Trade Commission with additional time to review the transaction. Keithley Instruments and Danaher believe that the status of the FTC review should not affect the anticipated timing of the completion of the transaction during the fourth quarter of 2010. Keithley Instruments manufactures advanced electrical test instruments and systems for use in advanced materials research, semiconductor device development and fabrication, and the production of end products such as portable wireless devices. The firm serves customers in more than 80 countries and generated $126.9 million of revenue during the fiscal year ended September 30, 2010.

Huawei Awards Oclaro Again For Being an Excellent Partner The firm has won the “Excellent Core Partner Award” award for the second year running. Oclaro, a tier-one provider of innovative optical communications and laser solutions, has received the Excellent Core Partner Award from Huawei, one of the world’s largest manufacturers of optical networking equipment for the telecommunications industry. “Huawei is an important customer to Oclaro,” said Alain Couder, President and CEO. “We want to thank Huawei for this prestigious award, which validates Oclaro’s unwavering commitment to serve its customers.” Huawei has selected Oclaro for the Excellent Core Partner Award for two consecutive years, reflecting Oclaro’s consistent delivery of high performance,



highly reliable products and exceptional customer service. It also reinforces Oclaro’s position as a tier-one strategic supplier to Huawei. The award was received by Jim Haynes, Oclaro Chief Operations Officer, at the Huawei 2010 Core Partner Convention. Oclaro provides optical communications and laser components, modules and subsystems for a broad range of diverse markets, including telecommunications, industrial, scientific, consumer electronics, and medical. Oclaro is a global leader, dedicated to photonics innovation with cutting-edge research and development (R&D) and chip fabrication facilities in the U.K., Switzerland and Italy, and in-house and contract manufacturing sites in the U.S., Thailand and China.

Chinese ZJF Group Acquires Irish Spin-Off Firecomms The acquisition was driven by the recent decisions by various provincial Chinese governments to classify Plastic Optical Fiber as a major construction focus across China.

In the first ever technology acquisition of an Irish high-tech company by a Chinese corporation, the ZJF Group has acquired Cork-based Firecomms, a leading manufacturer of transceivers for consumer Plastic Optical Fiber (POF).

The deal guarantees €5 million investment in R&D, together with the expansion of Firecomms’ engineering team from 18 to 30 people over the next 12 months. The deal also will facilitate the rapid expansion of Firecomms’ operations in mainland China.

“For some time now, mainland China has been our largest market,” said Firecomms CEO, Declan O’Mahoney. “As the ZJF Group is a major global player in this sector, today’s announcement not only allows us to guarantee investment capital and job growth for the future, it also provides us with access to the world’s largest marketplace for our technology.”

“Our acquisition of Firecomms is driven by the recent decision by various provincial governments

to classify Plastic Optical Fiber as a major construction focus across China,” said Xuping Zheng, Chairman of the ZJF Group. “Delivering this infrastructure with copper cables would result in over one million tons of CO2 emissions for China and would be impossible to implement as the demand for copper would far outweigh the world’s supply. China is already the largest manufacturer of Plastic Optical Fiber and we are combining those huge resources with Firecomms’ leading technology.”

Added O’Mahoney, “This increased investment in R&D, coupled with access to the broad resources of the ZJF Group, will be hugely advantageous for our customers. In addition to giving us the ability to offer complete integrated networking solutions to our customers, the investment and access to a fast-growing marketplace will result in rapid development of POF solutions, and reduced costs for this reliable, easy to use technology.

Ireland’s Minister for Enterprise, Trade and Innovation, Batt O’Keeffe TD, welcomed today’s news commenting, “The acquisition of Firecomms by the ZJF Group demonstrates the global appeal of the Irish high-tech sector. Ireland’s enterprise base is now well diversified and our economic recovery is anchored in continued strong export growth and a thriving foreign direct investment sector.”

“A recent study showed that foreign direct investment is generating more jobs per capita in Ireland than any other country,” according to Barry O’Leary, CEO, IDA Ireland. “IDA’s published strategy Horizon 2020 calls for an increase in investments from new high growth markets. This pioneering technology deal is a perfect example of why Ireland is increasingly recognized as a global innovation hub.”

Shareholders in Firecomms included Atlantic Bridge, ACT Venture Capital, Swisscom Ventures, Alps Electric and Enterprise Ireland. Brian Long, Managing Partner at Atlantic Bridge, and member of the Firecomms Board of Directors commented, “We are very pleased with this outcome, which positions Firecomms for continued growth and success in the world’s largest market. From our perspective, it reaffirms the strength of Atlantic Bridge as an investment vehicle, not only in terms of our capacity for making sound investments in the technology sector, but also the experience and strategic



guidance provided by the Atlantic Bridge team to companies in our portfolio.”

Ronan Daly Jermyn acted as legal advisors and Sardis Capital acted as financial advisors to the acquisition.

Firecomms, a semiconductor company, develops high-speed optical components that drive fiber optic networks in home, industrial and automotive applications. The company’s revolutionary OptoLock technology, licensed worldwide, has created the ability to bring fiber into every home in the world. The company was spun from the Tyndall National Institute in Ireland in 2001. Firecomms currently employs 18 people, many of whom are PhD level physicists and engineers.

The ZJF Group is an integrated Plastic Optical Fiber (POF) system and solutions provider, with over 3,000 employees involved in the development and manufacture of products based on POF. Established in 1994, the company sells to over 100 countries, and has supply partnerships worldwide for illumination products with large retailers such as Walmart, Target and B&Q. The company has deep ties with university and government-based research activity and has recently launched a wide range of high end optical networking equipment. The company is headquartered in Zhejiang, China.

Finisar Produces Industry’s First InfiniBand FDR Active Optical Cable The firm says it has developed the first device of this kind, which employs 14 Gb/s VCSEL technology, for use in HPC and 16X fibre channel applications. Finisar Corporation, a leading provider of active cables which accelerate storage, networking, and high-performance computing connectivity, will demonstrate the industry’s first InfiniBand FDR active optical cable. The high-speed Quadwire FDR cable will transmit 56 Gb/s data across four lanes of traffic at 14 Gb/s each.

As the performance speed of supercomputing clusters continues to accelerate, the High Performance Computing (HPC) and Datacenter markets demand higher speed interconnections to support the increasing bandwidth needs. These FDR active optical cables use 14 Gb/s VCSEL technology to provide the next level of data throughput in the form of a compact, lightweight and flexible optical cable suitable to support those very high density deployments. “We are extremely proud to be leading the way in active optical cable technology by demonstrating the industry’s first InfiniBand FDR active optical cable,” said Christian Urricariet, director of marketing for high-speed optics at Finisar. “This product leverages our expertise in optics technology to provide a timely solution to the bandwidth and link distance requirements which cannot be supported by copper cables.” Finisar will also have on display at SC10 its complete family of active cables including Laserwire for 10GbE, Quadwire for 40GbE and InfiniBand QDR, and C.wire™ for 100GbE and InfiniBand QDR. Visit Finisar’s booth #4738 to find out how it leverages fiber optic technology for the transmission of data while reducing the latency, weight, density, and power consumption of traditional copper solutions. Finisar is a global provider of fiber optic subsystems and components that enable high-speed voice, video and data communications for telecommunications, networking, storage, wireless, and cable TV applications. For more than 20 years, Finisar has provided critical optics technologies to system manufacturers to meet the increasing demands for network bandwidth and storage. Finisar is headquartered in Sunnyvale, California, USA with R&D, manufacturing sites, and sales offices worldwide.

Finisar Produces Industry’s First InfiniBand FDR Active Optical Cable The firm says it has developed the first device of this kind, which employs 14 Gb/s VCSEL technology, for use in HPC and 16X fibre channel



applications.

Finisar Corporation, a leading provider of active cables which accelerate storage, networking, and high-performance computing connectivity, will demonstrate the industry’s first InfiniBand FDR active optical cable. The high-speed Quadwire FDR cable will transmit 56 Gb/s data across four lanes of traffic at 14 Gb/s each. As the performance speed of supercomputing clusters continues to accelerate, the High Performance Computing (HPC) and Datacenter markets demand higher speed interconnections to support the increasing bandwidth needs. These FDR active optical cables use 14 Gb/s VCSEL technology to provide the next level of data throughput in the form of a compact, lightweight and flexible optical cable suitable to support those very high density deployments. “We are extremely proud to be leading the way in active optical cable technology by demonstrating the industry’s first InfiniBand FDR active optical cable,” said Christian Urricariet, director of marketing for high-speed optics at Finisar. “This product leverages our expertise in optics technology to provide a timely solution to the bandwidth and link distance requirements which cannot be supported by copper cables.” Finisar will also have on display at SC10 its complete family of active cables including Laserwire for 10GbE, Quadwire for 40GbE and InfiniBand QDR, and C.wire™ for 100GbE and InfiniBand QDR. Visit Finisar’s booth #4738 to find out how it leverages fiber optic technology for the transmission of data while reducing the latency, weight, density, and power consumption of traditional copper solutions. Finisar is a global provider of fiber optic subsystems and components that enable high-speed voice, video and data communications for telecommunications, networking, storage, wireless, and cable TV applications. For more than 20 years, Finisar has provided critical optics technologies to system manufacturers to meet the increasing demands for network bandwidth and storage. Finisar is headquartered in Sunnyvale, California, USA with R&D, manufacturing sites, and sales

offices worldwide.

Veeco Delivers GEN10 MBE System to University of New Mexico The Center for High Technology Materials at the university will utilize the Molecular Beam Epitxy (MBE) system in the development of next generation infrared detectors. Veeco Instruments has recently delivered a GEN10 Automated Molecular Beam Epitaxy (MBE) System to the University of New Mexico (UNM) Center for High Technology Materials (CHTM). The GEN10 was purchased through a successful instrumentation grant by the Air Force Office of Scientific Research awarded to Sanjay Krishna, Associate Director, UMN CHTM and Professor of Electrical and Computer Engineering. Krishna’s group consists of research professors, postdoctoral fellows, graduate students and undergraduates who are investigating next generation infrared detectors. The system is also accessible for use by the other researchers at the center, department, school and university and is available for industry to assembly specialized prototypes. The system will also benefit small businesses by supplying wafers to them. For example, Krishna has a start-up company that will use the grown samples in an infrared camera that will permit early detection of melanomas on the skin using extremely small temperature variations. Biological sciences, in addition to energy harvesting, is the newest focus for researchers at the CHTM facility since its inception 25 years ago, with an historical concentration in electrical and optical semiconductor research. We’re excited about the delivery of our new automated R&D MBE system, being the first system of this kind available for use in a university setting in the U.S, said Krishna. We chose the Veeco GEN10 because of its state-of-the-art design that allows researchers to grow complex crystals with better quality control than has been possible in the past.



In addition, its flexible footprint design provides for efficient use of multiple growth modules for projects of interest by our various groups. With focus on maximum efficiency and the need for independent growth of multiple incompatible materials in a single system architecture, Veeco is seeing an increase in interest of its enabling cluster tool systems. The GEN10 for R&D is the most recent introduction to the robust Veeco cluster tool product line, built upon nine years of cumulative knowledge within various production environments. Orders over the last year position the GEN10 into all major applications for MBE, including those related to III-Vs, oxides and nitrides. Veeco makes equipment to develop and manufacture LEDs, solar panels, hard disk drives, and other devices. The firm supports its customers through product development, manufacturing, sales and service sites in the U.S., Korea, Taiwan, China, Singapore, Japan, Europe and other locations.

As a Finalist in Technology Innovation, Kopin Hopes to Strike Gold The company has been commended for innovation in mobility for the Golden-I mobile computing headset. Kopin Corporation, one of the largest U.S. manufacturers of micro-displays for consumer, industrial and military applications, has been named a Recognized Innovator finalist by the Technology Services Industry Association (TSIA) at the Technology Services World conference in Las Vegas. The company was named a finalist in the Innovation in Mobility category for its Golden-i Mobile Computing Headset. The Recognized Innovator Awards have become highly regarded in the service industry, representing the only independently judged awards program that recognizes innovation in technology services products and service offerings documented with

customer case studies of measurable business value and results. As an awards finalist, Kopin demonstrated real-world examples of how their mobile technology or services have been used to extend the reach of a service organization, streamlining activities and lowering operational costs. “Golden-i is being developed to be the world’s first hands-free mobile-computing communications system to help enterprises improve the safety, efficiency, and productivity of their workforce,” said Jeffrey Jacobsen, Kopin Senior Advisor to CEO and Golden-i Program Manager. “TSIA’s recognition of Golden-i’s contribution to the field of mobility is a testament to its unique capabilities and endless possibilities it provides to businesses.” As a lightweight mobile computing headset, Golden-i provides hands-free, wireless remote control of multiple devices (PCs, mobile phones, industrial equipment, company servers, etc.) on-demand and enhances cloud computing environments. Golden-i offers wireless access to virtually all information and can maintain multiple 15-inch virtual display screens spatially so the user can switch to a different screen by a simple head motion. Golden-i can also send and receive HD streaming video real-time over Bluetooth 2.1 EDR, WiFi or cellular. “Kopin has clearly demonstrated that it understands the value of mobility and can strategically partner with technology service organizations to provide them with innovative tools that improve employee performance, enhance employee safety and contribute to group collaboration and remote shared experience,” said John Ragsdale, vice president of technology research for TSIA.” The Technology Services Industry Association (TSIA) is a leading association dedicated to advancing the business of technology services. Technology services organizations large and small look to TSIA for world-class benchmarking and research, exceptional peer networking and learning opportunities, and high-profile certification and awards programs. Find TSIA online at www.tsia.com. Kopin Corporation produces lightweight, power-efficient, ultra-small liquid crystal displays,



ruggedized commercial and military imaging systems and heterojunction bipolar transistors (HBTs) that are revolutionizing the way people around the world see, hear and communicate. Kopin has shipped more than 30 million displays and imaging systems for a range of consumer and military applications including digital cameras, personal video eyewear, camcorders, thermal weapon sights and night vision systems. The Company’s unique HBTs, which help to enhance battery life, talk time and signal clarity, have been integrated into billions of wireless handsets as well as into WiFi, VoIP and high-speed Internet data transmission systems. Kopin’s proprietary display and HBT technologies are protected by more than 200 global patents and patents pending.

Renesas to Strengthen its Compound Semiconductor Business The company aims to become the industry-leading compound semiconductor supplier by strengthening its product lineups in the photocoupler, optical storage, RF switch, GaAs FETs and GaN based markets.

Renesas Electronics Corporation, a supplier of advanced semiconductor products, has announced new objectives to strengthen its compound semiconductor business.

Currently, the company makes opto devices formed by compound semiconductor such as gallium arsenide (GaAs).

Renesas plans to acquire and maintain the world’s #1 market shares of photocouplers and optical storage devices. It hopes to further expand market shares of RF switch ICs and GaAs low-noise field effect transistors. The firm also intends to launch new gallium nitride (GaN)-based semiconductor products by March 2011.

Renesas Electronics expects the market of compound semiconductors to grow by an average annual growth rate of 8 %from FY2010 to FY2012, and by achieving these objectives, the company aims to expand its compound semiconductor

business by 11 %, exceeding the market growth rate. Renesas also plans to increase its compound semiconductor sales in FY2012 by 1.2 times, targeting to become the industry-leading compound semiconductor supplier.

Regarding photocouplers, Renesas plans to accelerate its development of high-temperature operation, low-power and small-sized package to address the rising demand from the “green” markets such as hybrid and electric vehicles, LED lighting systems and electric meters. The company is aiming to achieve the world’s #1 share in the photocoupler market in FY2011.

The company intends to further expand its sales of photocouplers by combining them with its IGBTs (insulated gate bipolar transistors), suitable for high-voltage and high-current output, and microcontrollers (MCUs) as one kit solution. In particular, the company will strengthen its overseas marketing function by doubling the headcount. In anticipation of a rapid rise in demand, Renesas Electronics plans to double its production capacity from that of FY2009 Q4.

With respect to RF switch ICs that enable transmit-receive switching, 3G-GSM-mode switching and antenna switching on electric devices with an RF function such as mobile phones and notebook PCs, Renesas will adopt a new compact transistors offering industry-leading low losses.

To meet customers’ demands, the firm will offer its RF switch IC products equipped in an ultrasmall package or as a bare die. The company also aims to expand its RF switch IC business through collaboration with chipset vendors in the U.S., Europe and Taiwan to provide reference designs for system manufacturers. By achieving these objectives, Renesas Electronics intends to retain its current worldwide top share in the RF switch IC market.

The final plan is to launch GaN-based semiconductor products by March 2011. GaN is capable of operating at higher frequency, output power and temperatures compared to the existing semiconductor materials such as silicon (Si) and GaAs, and allows for far higher frequency of operation compared to SiC (silicon carbide), enabling higher breakdown voltage and high-speed operation for high-frequency applications.

RF electronics ♦ industry news


Unlike other companies that apply the multi-layered fabrication method on a SiC substrate with a diameter of 3 to 4 inches, Renesas Electronics fabricates a circuit by stacking GaN layers on a Si substrate. This method brings a realization of larger wafers (6-inch wafers) and enables production of semiconductor devices at low-cost.

Renesas Electronics plans to first launch its GaN-based products with high functionality for the market of CATV (cable television) amplifiers. Sample shipments of its first GaN-based product, a module device for CATV incorporating multiple GaN FETs, condensers and other devices, is scheduled to begin by March 2011. Renesas Electronics Corporation supplies advanced semiconductor products including microcontrollers, SoC solutions and a broad range of analog and power devices. Business operations began as Renesas Electronics in April 2010 through the integration of NEC Electronics Corporation and Renesas Technology, with operations spanning research, development, design and manufacturing for a wide range of applications. Headquartered in Japan, Renesas Electronics has subsidiaries in 20 countries worldwide.

Industry news RF electronics

Nujira’s Military PA Platform Halves Power Dissipation The firm’s first PA (Power Amplifier) platform for the military has set a new benchmark for the size and weight of the batteries and extended usage time for troops. Nujira has released its first PA platform for military communications, halving the power dissipation for a transmitter covering an entire frequency octave. Such a transmitter can be built using just using just one PA device together with a Coolteq power modulator module. Tim Haynes, CEO of Nujira said, “New military net-

centric communications systems provide a secure rapid flow of voice, data and video information and offer reliable, good quality coverage over wide bandwidths. This transmission environment is especially challenging, as the required operating frequency range is very wide and the Peak to Average Power Ratio (PAPR) is high. Delivering such a major efficiency improvement is a significant achievement, and offers military communications systems designers and users a considerable advantage by reducing the size and weight of the batteries required and/or extending the usage time.”

The Nujira military PA platform uses an RFMD RF3934 PA device together with a Coolteq.h envelope tracking (ET) modulator module. The performance of this platform was compared to the performance of the same transistor in fixed drain configuration over an operating frequency range of 225 to 450 MHz, with signals with a very high peak to average power ratio (PAPR) of 10 dB. Using the Nujira ET module, the amplifier showed an efficiency improvement from 25% to 40% (which represents a halving of the power dissipation) and, as an additional benefit from ET, delivered 1.5 to 2 dB more peak power. The waveforms used in the new networked battlefield communications protocols are usually OFDM or QAM based and support frequency hopping and adaptive signal to noise encoding schemes. For example, the Wideband Networking Waveform (WNW) specified by JTRS for ground to ground and ground to air communications and the Tactical Targeting Network Technology (TTNT) used for airborne sensor, shooter and ordnance communication is based on the OFDM modulation scheme. The Soldier Radio Waveform (SRW) for soldier


industry news ♦ RF electronics

to soldier communications is based on QAM modulation. The MUOS (Mobile User Objective System) for satellite to ground, sea or air communication uses both OFDM and QAM, and leverages the W-CDMA technology developed commercially for existing mobile phone networks.

Avago Says IQE is an Outstanding RF Supplier IQE Inc. based in Bethlehem, USA, has been awarded the Outstanding Supplier Award by the major RF product manufacturer Avago. IQE, a global supplier of advanced semiconductor epitaxial wafer products and wafer services has announced that IQE’s Bethlehem, PA operation, IQE Inc, has been recognized as an outstanding supplier to leading wireless chip manufacturer, Avago Technologies. Avago Technologies is a leading RF product manufacturer with a history of innovation dating back 40 years. The Outstanding Supplier Award is based on a number of quality related criteria for products and services. IQE supplies Avago with specialized radio-frequency (RF) materials used in the manufacture of high-end components for handsets and other wireless applications. Drew Nelson, IQE Group CEO and President commented, “We are delighted that IQE Inc has been honored with this award from one of the leading chip manufacturers in the wireless industry. The award demonstrates IQE’s commitment to supplying its customers with the best quality of products and services.” IQE offers the industry’s broadest product portfolio, which includes gallium arsenide (GaAs) based epitaxial wafers for RF wireless applications, including PHEMTs, HBTs and BiHEMTs, in addition to high-performance GaN based devices. As a global supplier of advanced semiconductor wafers with products that cover a diverse range of applications, IQE is supported by an innovative outsourced foundry services portfolio that allows

the Group to provide a ‘one stop shop’ for the wafer needs of the world’s leading semiconductor manufacturers. IQE uses advanced MOCVD and MBE crystal growth technology (epitaxy) to manufacture and supply bespoke semiconductor wafers (‘epi-wafers’) to the major chip manufacturing companies, who then use these wafers to make the chips which form the key components of virtually all high technology systems. IQE is unique in being able to supply wafers using all of the leading crystal growth technology platforms. IQE’s products are found in many leading-edge consumer, communication, computing and industrial applications, including a complete range of wafer products for the wireless industry, such as mobile handsets and wireless infrastructure, Wi-Fi, WiMAX, base stations, GPS, and satellite communications; optical communications, optical storage (CD, DVD), laser optical mouse, laser printers & photocopiers, thermal imagers, leading-edge medical products, barcode, ultra high brightness LEDs, a variety of advanced silicon based systems and high efficiency concentrator photovoltaic (CPV) solar cells. The manufacturers of these chips are increasingly seeking to outsource wafer production to specialist foundries such as IQE in order to reduce overall wafer costs and accelerate time to market. IQE also provides bespoke R&D services to deliver customized materials for specific applications and offers specialist technical staff to manufacture to specification either at its own facilities or on the customer’s own sites. The Group is also able to leverage its global purchasing volumes to reduce the cost of raw materials. In this way IQE’s outsourced services, provide compelling benefits in terms of flexibility and predictability of cost, thereby significantly reducing operating risk. IQE’s share price had rocketed in recent months. On 30 November 2009 it was £0.1675 and a year later it is £0.4675; the shares have risen 179.10% over the year.



TriQuint Wins $17.5M Contract with US Air Force Lab The Title III manufacturing development contract for 100mm GaN focuses on maximizing yield and lowering costs in high power and high frequency device manufacturing. TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, has been awarded a Defense Production Act Title III gallium nitride (GaN) manufacturing development contract by the US Air Force Research Laboratory (AFRL).

The overall goal of the contract is to increase yield, lower costs and improve time-to-market cycles for defense and commercial GaN integrated circuits. The contract was awarded based on TriQuint’s success and experience developing new gallium nitride technologies and products. TriQuint�s new GaN contract is divided into three phases with goals and assessment criteria at each milestone. The primary first phase goal is to make a baseline assessment of manufacturing readiness, according to TriQuint VP Tom Cordner. In the second program phase, TriQuint will work to improve and refine the production process to reach a manufacturing readiness level (MRL) of 8 in developing its advanced MMICs. In the final phase, which is expected to conclude in 2013, the program will demonstrate MMIC fabrication that meets full performance, cost and

capacity goals. TriQuint is the prime contractor and all the work is to be performed at its Richardson, Texas facility. TriQuint has been a leader in GaN research and product development for both defense and civilian applications since 1999. In addition to its military design and manufacturing work, TriQuint has released new GaN amplifiers for wireless communications and a wide range of other applications over the last three years. TriQuint was the first to offer high frequency, high power commercial GaN foundry services (0.25μm GaN on SiC) in 2008. “TriQuint is very excited to participate in this program to accelerate gallium nitride manufacturing technology. This program will take the technology from the early stages of production to a mature manufacturing process enabling next-generation systems,” Cordner remarked. “We have successfully transferred process technologies into manufacturing at TriQuint for more than 25 years and we look forward to these new challenges and opportunities.” Gallium nitride is a key process technology that is leading advanced semiconductor amplifier design thanks to inherent advantages including high voltage operation, greater power density (more power per square millimeter) and efficiency. The on-going development of GaN-based devices is leading to new smaller, more efficient amplifiers that reduce system size, weight and power consumption. TriQuint’s expertise in gallium nitride (GaN), gallium arsenide (GaAs) / high-voltage GaAs pHEMT, surface acoustic and bulk acoustic wave (SAW / BAW), low-cost packaged devices and monolithic microwave integrated circuits (MMICs) has made it a leading supplier of RF system components to Boeing, Lockheed Martin, Northrop Grumman, Raytheon and other major defense contractors. TriQuint supplies RF innovation for consumer retail products including mobile devices, wireless LAN, triple-play CATV systems, optical network and wireless infrastructure applications.


industry news ♦ RF electronics

TriQuint Make a Mint with NRL Contract to Develop GaAs MMICs The $2 million dollar award from the U.S. Naval Research Laboratory (NRL) will be used to create new high-performance S-band low noise amplifiers (LNAs) and high performance amplifiers (HPAs). TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, has received a $2 million contract from the U.S. Naval Research Laboratory (NRL) to develop S-band amplifiers with new benchmarks for noise floor, linearity and efficiency performance. TriQuint was awarded the contract based on its expertise developing new semiconductor processes and products with GaAs and other technologies. The NRL monolithic microwave integrated circuit (MMIC) contract will focus on low noise amplifiers and high power amplifiers (LNAs / HPAs). “We’re pleased the U.S. Navy has chosen TriQuint again for another program that takes advantage of our leadership in both process development and the design of efficient, high-power microelectronics. It’s exciting to explore another opportunity with the NRL that advances the state of the art,” said Tony Balistreri, TriQuint Marketing Director. TriQuint’s expertise in gallium arsenide / high-voltage GaAs pHEMT, gallium nitride (GaN), surface acoustic and bulk acoustic wave (SAW / BAW) devices, MMICs and low-cost packaged products has made it a leading supplier of RF system components to Boeing Company, Lockheed Martin Corporation, Northrop Grumman, Raytheon and other major defense contractors. TriQuint supplies RF innovation for consumer retail products including mobile devices, wireless LAN, triple-play CATV systems, optical and wireless infrastructure applications.

RF Micro Devices(R) Awarded $1.5 Million Navy Contract for GaN RF Power Technology RF Micro Devices , a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits.

The $1.5 million R&D contract award expands RFMD’s contract backlog over the next six quarters to approximately $5 million. Since calendar 2004, RFMD has been awarded over $14.5 million in R&D contracts by the U.S. Government for development of its GaN high power RF technology. Jeff Shealy, VP and general manager of RFMD’s Defense and Power business unit, said, “GaN technology offers unprecedented performance advantages to advanced military applications, including radar, mobile communication and electronic warfare (EW) systems. Our partnership with ONR is mutually beneficial, and we are very enthusiastic about our shared mission to deploy GaN technology broadly across multiple high performance RF power applications.” Bob Bruggeworth, president and CEO of RFMD, said, “RFMD is leveraging the world’s largest compound semiconductor wafer fab and captive assembly and test facilities to deliver an industry-leading supply chain for the design, packaging and test of GaN high power devices. Importantly, we utilize our scale manufacturing assets used to manufacture and ship approximately three million RF components per day, enhancing our competitive position in the high power amplifier (HPA) marketplace and increasing our ability to improve upon RFMD’s return on invested capital (ROIC).” In addition to military systems, RFMD’s GaN RF power technology delivers enhanced performance to a growing number of commercial power amplifier applications, including private mobile radio (PMR), 3G/LTE wireless infrastructure and CATV transmission networks.



RFMD to Support Samsung’s GALAXY Tab Android Tablet RFMD is supplying Samsung with three highly integrated WiFi components which combine small footprint with superior performance. RF Micro Devices, a global provider of high-performance radio frequency components and compound semiconductor technologies, says that Samsung has selected three of its highly integrated components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab Android tablet. Specifically, RFMD is supplying Samsung with the RF5521 front end module (FEM) for the low-band 2.4 GHz frequency, and the RF5515 low noise amplifier (LNA) and RF5355 power amplifier (PA) for the high-band 5.0 GHz frequency. Volume shipments have begun, and RFMD anticipates increasing WiFi shipments to Samsung -- in mobile tablet devices as well as in smartphones -- as single-band and dual-band design wins ramp into volume production. With 3G connectivity, Wi-Fi, and Bluetooth 3.0, the Samsung GALAXY Tab takes mobile communication to a whole new level. By combining Samsung innovation with the Android OS 2.2, the Tab is an always on communication and entertainment tool. Its large battery (4,000 mAh) provides more than 7 hours of movie viewing time and because it’s powered by a Cortex A8 1.0GHz application processor, it’s designed to deliver high performance. The RF5521 FEM, RF5515 LNA and RF5355 PA are on a leading WiFi reference design and were selected primarily due their combination of performance, integration and small footprint size. The RF5521 FEM combines a low noise amplifier (LNA) with bypass and a single pole three throw (SP3T) switch. The RF5515 and RF5355 operate in tandem to provide a 5GHz RF front end solution that exceeds competitive performance and price levels while it delivers extended range capability. Each of the components is targeted at high-performance mobile applications using WiFi and Bluetooth(R) combination systems. Bob Van Buskirk, president of RFMD’s Multi-Market

Products Group (MPG), said, “We are delighted to support the Samsung GALAXY Tab, and we look forward to growing our WiFi business with Samsung across both smartphones and mobile tablet devices. As we drive to extend our product leadership in a wide range of RF components, our customers can rely on RFMD’s ability to deliver highly integrated solutions that provide superior performance in a reduced-size footprint, significantly enhancing the end user’s wireless connectivity experience.” The mobile embedded WiFi market is growing at a rapid pace, and dual-band WiFi (2.5GHz/5GHz) is in the early stages of adoption in the expanding market for mobile internet devices (MIDs). RFMD offers a broad portfolio of low-band, high-band, and dual-band components, and the Company expects its mobile WiFi product portfolio to contribute meaningfully to MPG’s anticipated revenue growth.

RFHIC Introduces Wide Range 8W, TETRA GaN Hybrid Amplifier The 100~960 MHz GaN amplifier has an efficiency of between 50 and 70%. RFHIC says high production yields are guaranteed within the SMD type package. A new class-C GaN (Gallium Nitride) hybrid amplifier using GaN-on-SiC (Gallium Nitride on Silicon carbide substrate) devices has recently been released by RFHIC. The amplifier gives VHF at 8 W in the 130~450 MHz range, an efficiency of 60%, and UHF at 6 W in the 450~960 MHz range, an efficiency of 50%. Input and output matching circuits are included in the design with bias circuits and other matching circuits. Physical size of the amplifier is 15 mm x 10 mm x 5.4 mm and is an SMD (surface mount device) type hybrid GaN amplifier. Input voltage is 24 V~34 V and uses ceramic substrate over copper heat slug.


industry news ♦ Lasers

Existing TETRA (TErrestrial Trunked RAdio, formerly known as Trans European Trunked Radio) amplifiers use LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology and operate on a 5 V~12 V supply voltage. Also previous designs separated three to four bands of 130~220 MHz, 380~400 MHz, 410~470 MHz, 560~580 MHz, and 870~933 MHz and combining losses were inevitable. Recent developments in the TETRA technology will enable the use of the full 100~960 MHz frequency range with an efficiency of 50~70%. High production yields are guaranteed with a SMD type package and all amplifiers are 100% tested and aged for immediate installation. These more efficient amplifiers can reduce the number of the base station installations in the field for a greener environment. RFHIC has been using Gallium Nitride (GaN) technology since 2004. With extensive research and design experience, RFHIC accumulated technological breakthroughs in major areas such as internal matching, heat dissipation, Doherty designs, module optimization, MMIC design and package assembly. These experiences contributed to designing a better performance GaN power amplifier with lower cost for the telecommunication market. RFHIC is now working on 100 W and 500 W TETRA hybrid amplifiers. 20 W and 40 W amplifiers are already in production.

Industry newsLasers

Laser and 10Gb/s Silicon Modulator Using CMOS Fabrication Processes CEA-Leti, coordinator of the European HELIOS project to accelerate commercialization of silicon photonics, said today project partners demonstrated a laser and a 10Gb/s silicon modulator using a process that is compatible with complementary metal-oxide semiconductor (CMOS) processing.

Silicon photonics is an emerging technology for overcoming electrical connections’ limits in processing increasingly data-rich content and reducing the cost of photonic systems by integrating optical and electronic functions on the same chip. The technology may enable low-cost solutions for a range of applications such as optical communications, chip-to-chip and rack-to-rack connections, data-center cables, optical signal processing, optical sensing, and biological applications.

The project, in its second year, is developing building blocks and processes to accelerate the adoption of silicon photonics. The laser was fabricated by first bonding a III-V material (indium phosphide) on top of a CMOS wafer and then processing it using the same equipment as in microelectronics production.

The project, in its second year, is developing building blocks and processes to accelerate the adoption of silicon photonics. The laser was fabricated by first bonding a III-V material (indium phosphide) on top of a CMOS wafer and then processing it using the same equipment as in microelectronics production.

The consortium also demonstrated a 10Gb/s silicon modulator with an extinction ratio of 7dB. The 40Gb/s version has already been designed by the consortium and is under fabrication. First characterization results are expected next year.

“The capability of manufacturing optical components

Lasers ♦ industry news


within the CMOS-processing infrastructure is key to realizing the potential of silicon photonics,” said Laurent Fulbert, photonics programs manager at Leti and coordinator of HELIOS. “The HELIOS partners are focused on bringing this technology to foundries and component manufacturers for high-volume applications.”

In addition to the laser and silicon modulator, building blocks under development by the HELIOS partners include a light modulator, passive waveguides and photodetectors.

Other recent results of the project include:

•Demonstration of high responsivity (0.8-1A/W), low dark current and high BW photodiodes (up to 130 GHz) •Efficient passive waveguides (Mux/Demux, polarization diversity circuit, fiber coupling, rib/strip transition) •Establishment of a photonics design flow •Investigation of novel concepts for light emission and modulation

Most of the results of the second year have been presented at the IEEE Group Four Photonics Conference in Beijing.

The HELIOS consortium also developed a training course addressing all aspects of silicon photonics. This free, 21-hour course is available on HELIOS website: http://www.helios-project.eu/Download/Silicon-photonics-course

In addition to Leti, the HELIOS partners are: - imec (Belgium) - CNRS (France) - Alcatel Thales III-V lab (France) - University of Surrey (UK) - IMM (Italy) - University of Paris-Sud (France) - Technical University of Valencia (Spain) - University of Trento (Italy) - University of Barcelona (Spain) - 3S Photonics (France) - IHP (Germany) - Berlin University of Technology (Germany) - Thales (France) - DAS Photonics (Spain) - Austriamicrosystems AG (Austria) - Technical University of Vienna (Austria) - Phoenix BV (Netherlands) - Photline Technologies (France)

The HELIOS Project website address is www.helios-project.eu/

Soraa builds the brightest blue lasers Soraa has fabricated blue lasers delivering more than 800 mW and green variants producing more than 60 mW.

University of California, Santa Barbara, spin-off Soraa claims to have broken the output power and efficiency records for blue laser diodes.

The west coast start-up, which is based in Goleta, California, has produced a 447 nm edge-emitting laser with a 900 micron cavity that delivers an output above 800 mW, and a shorter version with a 600 micron cavity that has a peak wall plug efficiency (WPE) of 23.2 percent.

In addition, the company has made a 521 nm laser that delivers more than 60 mW and produces a WPE in excess of 1.9 percent.

All the green and blue lasers have been built on undisclosed, non c-plane orientations of GaN using conventional semiconductor processing technology for this wide bandgap material. The devices were 1.5- 2.5 microns wide and featured a surface ridge laser architecture designed for single lateral mode operation.

Soraa’s most powerful blue laser had a threshold current and voltage of 45 mA and 3.8V. Slope efficiency was 1.55 W/A at a case temperature of 20 degrees C. The shorter variant had a threshold current and voltage of 30 mA and 3.8V, a slope efficiency of 1.68 W/, and a WPE of 23.2 percent at a laser output of 180 mW.

At an output of 100 mW, the efficiency of these laser chips are about 40 percent higher than those reported by Osram Opto Semiconductors at this year’s Photonics West meeting. Soraa says that this highlights the attractiveness of non c-plane lasers for applications requiring high efficiency, such as next generation displays.

Reliability testing of five blue lasers revealed a mean lifetime of 10,000 hours. These tests used automatic power control to start driving lasers at 60 mW and the time it took for the output power to fall by 20 percent was recorded.

The green lasers produced by the start up had a 600 micron cavity, a threshold voltage and current



of 7.3 V and 130 mA, and a slope efficiency of 0.3 W/A.

The 60 mW, CW output of this device compares favourably with the 50 mW output of Osram’s 524 nm laser, which the German outfit reported this summer.

Soraa says that its success stems from only 15 months of effort, which indicates the great promise of green lasers built on non c-plane GaN. Turning to this orientation increases quantum well electron-hole overlap, reduces effective hole mass and boosts design freedom.

Soraa’s engineers, which include the University of California, Santa Barbara, academics James Speck, Steven DenBaars and Shuji Nakamura, and former director of Philips Lumileds’ Advanced Laboratories, Mike Krames, have detailed the results of these blue and green lasers in the latest edition of Applied Physics Express.

Semi-Polar GaN LDs Greener in More Ways Than OneScientists at SEI have shown that green laser diodes grown on the semi-polar GaN plane have half the threshold current of green LDs grown on the commercially used GaN c-plane. Researchers from Sumitomo Electric Industries have discovered that green laser diodes (LD) grown on the semi-polar gallium nitride (GaN) plane are more efficient than those grown on the conventional c plane.

Currently, commercially available lasers in the

green region, which are based on second harmonic generation (SHG)technologies, suffer from size and stabiility problems. It’s therefore more viable to use III-nitride based LDs (which have preferable lifetimes to II-VI based green LDs). The work published in Applied Physics Express describes results obtained for LD structures grown by metal organic chemical vapor deposition (MOCVD) on semi-polar GaN substrates grown by hydride vapor phase epitaxy (HVPE). Far-field patterns (FFPs) indicate that the symmetry and optical confinement of a green LD with InGaN wells and InAlGaN cladding layers are comparable to traditional c-plane InGaN LDs. The characteristic temperature for the semi-polar LD lasing at 525nm is 175K, much higher than the 145K at 518nm and 120K for 515nm previously demonstrated for c-plane LDs. Furthermore, between 520 and 530nm, green LDs on the plane exhibit threshold current densities of almost half of those on the c-plane. Above 530nm, threshold current densities increase sharply for the c-plane but increase only slightly for the semi-polar plane LDs. The reason for this improvement in efficiency, the scientists say, is most likely to be due to the superior compositional homogeneity of the InGaN quantum wells grown on the plane which has previously been experimentally shown using time-resolved photoluminescence. In the future, the researchers plan to further optimize the device for high-power operation, and say a report is due in the ‘near future’. Further details of this work are published in ‘Applied Physics Express 3 (2010) 121001’ and available via the following link: http://apex.jsap.jp/link?APEX/3/121001/

Lasers ♦ industry news


Researchers Produce Long-Wavelength VCSEL using a High Contrast Grating Instead of a distributed Bragg reflector, a high contrast grating (HCG) is used as a top mirror. The HCG can be modified to create a micro-electro-mechanically tunable VCSEL. The ever-growing demands for bandwidth in telecommunication networks, mainly caused by the unprecedented growth in data traffic in local and access networks, necessitate the development of a new generation of low-cost and high-speed optical links. Vertical-cavity surface-emitting lasers (VCSELs) promise an efficient and reliable solution to this growing problem. They offer low power consumption compared to the conventional edge-emitting lasers and can be manufactured in volume at low cost. VCSELs are already widely used in short range data interconnects. However, long-wavelength VCSELs have inherent difficulties in finding appropriate material combinations for implementing both an active region and a top mirror on the same substrate. It is extremely difficult to produce VCSELs beyond 1.3 um using the Gallium arsenide (GaAs) material platform common for 850-980 nm devices. Researchers at UC Berkeley created a 1.55 um VCSEL fabricated on novel platform that provides continuous-wave operation at room temperature. Instead of a distributed Bragg reflector, a high contrast grating (HCG) is used as a top mirror. The HCG can be modified to create a micro-electro-mechanically tunable VCSEL. An ion implantation process is used to form the current aperture. The device is easy to fabricate, provides a high degree of polarization differentiation, and can be designed to work at up to 2.3 um. Suggested uses of the VCSEL are in 1.3 - 2.3 um laser sources for data communications, metropolitan and local area networks (LANs) and passive optical networks (PONs). It could also be used in fiber-to-the-home (FTTH) networks and where low loss tunable laser sources are required

(e.g. for spectroscopy, biological sensing). Finally, it could be employed in multi-wavelength laser arrays for wavelength-division multiplexing. Advantages of the design include low cost fabrication (monolithic growth using wet or dry etching) and intrinsic polarization control. Furthermore, there are no degenerate polarization modes and fast tuning speed is possible due to the small mass of the HCG. The inventors of the product are Connie J Chang-Hasnain, Christopher Chase and Yi Rao and a patent for the device is currently pending.

Mitsubishi Electric Offers “Industry-Leading” New Red Laser Diode The firm’s latest ML501P73 diode is ideal for pico projectors and other portable display systems that require a high-brightness red light source. Mitsubishi Electric Corporation has launched a 638-nanometer (nm) wavelength red laser diode (LD) offering an output power of 1W, which the firm claims is the world’s highest among 638 nm band LDs. The ML501P73 diode is ideal for pico projectors and other portable display systems that require a high-brightness red light source. Sample shipments will begin on November 18, 2010. Pico projectors have drawn much attention because they can be embedded in or connected to mobile systems such as cellular phones and laptop computers. LDs are widely used as light sources for these projectors for their ability to project a wider range of colors compared to lamp-based projectors. LDs deliver higher output while consuming less power than light emitting diodes (LEDs), extending battery life. LDs also enable focus-free operation because optical systems with great depth of field can be used with laser beams. At high temperatures, the output power of red LDs with wavelengths shorter than 640 nm was not sufficient for high brightness projector applications. Mitsubishi Electric utilized its unique capabilities



in applying window mirror structures and epitaxial growth technology to develop an industry-leading output power of 1W at a 638-nm lasing wavelength. Mitsubishis says its ML501P73 diode has the highest recorded pulsed output power of 1 W at 638 nm for micro projectors. Luminosity as a red light source exceeds 120 lumens (lm) due to lasing at short wavelength. The product has an industry-leading electrical conversion ratio of 35% at 1W at a temperature of 25 degrees C, enabling the reduction in power consumption With operational temperatures between -5 degrees C and + 40 degrees C, the product can emit 1W in pulsed output and 0.5W in continuous waves within an operating range of -5 degrees C to + 40 degrees C. In the pulse condition, the duty ratio is less than 33% and the frequency is higher than 50Hz. With over 85 years of experience in providing reliable, high-quality products to both corporate clients and general consumers all over the world, Mitsubishi Electric is a leader in the manufacture, marketing and sales of electrical and electronic equipment used in information processing and communications, space development and satellite communications, consumer electronics, industrial technology, energy, transportation and building equipment.

Microvision Integrates Direct Green Lasers into PicoP The firm has reached a critical milestone towards the commercialization of PicoP display engines using direct green lasers. This is expected to offer significant commercial advantages in price, size, power, and performance over conventional frequency doubled green lasers. Microvision, a leader in innovative ultra-miniature projection display technology has successfully integrated the first “direct green” laser samples from two leading manufacturers into pico projector benchtop prototypes. This achievement represents an important first step toward the commercialization of PicoP display engines using direct green lasers. The PicoP display engine utilizing a direct green laser is

expected to offer significant commercial advantages in price, size, power, and performance. “We are very pleased with the performance of these early direct green laser prototypes,” commented Sid Madhavan, Microvision VP of R&D and Applications. “These encouraging results give us confidence that direct green laser diodes will be capable of meeting the performance requirements for integration into our PicoP display platform.” Microvision’s current pico projection engine uses red and blue laser diodes and a frequency-doubled “synthetic” green laser to create a full color image. Synthetic green lasers are infrared lasers that are manipulated to reduce their wavelength to produce a green light. This conversion process creates a complex system of multiple components held to tight tolerances making manufacturing more challenging. Direct green lasers are capable of producing green light natively, greatly simplifying laser design and manufacturing processes. Direct green lasers are expected to be manufactured in a manner similar to red and blue lasers available today, facilitating lower cost and rapid scalability to commercial quantities. The combination of smaller size, lower power, and lower cost make direct green lasers an attractive alternative to synthetic green lasers for Microvision’s mobile display solutions. Historically, availability of synthetic green lasers has been constrained due to their complexity and the existence of only two manufacturers. Today, there are at least five companies worldwide that have announced they are developing direct green lasers for late 2011 to mid 2012 commercial introduction. Industry researcher Yole Development forecasts that the direct green laser market size will reach about $500 million by 2016 and should represent more than 45 million devices. Microvision provides the PicoP display technology platform designed to enable next-generation display and imaging products for pico projectors, vehicle displays and wearable displays that interface with mobile devices. The company’s projection display engine uses highly efficient laser light sources which can create vivid images with high contrast and brightness.

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Industry newsSolar

SÜSS MicroTec and Rolith Cooperate on Nanolithography Technology The firms anticipate the technology will enable the next generation of advanced products, such as high efficiency 3D solar cells, and building-integrated PVs. SÜSS MicroTec, a leading supplier of equipment and process solution for the semiconductor industry and related markets, has entered into a joint development and exclusive license agreement with Rolith. The two firms will develop and build nanostructuring equipment employing a disruptive nanolithography method developed by Rolith. Availability of a high throughput cost effective technique for nanostructuring over large areas of substrate materials brings new possibilities to renewable energy and green building markets. Rolith’s patent pending nanolithography technology is based on a proprietary implementation of near-field optical lithography using cylindrically shaped rolling masks. Sub-wavelength resolution is achieved by phase-shift interference effect or plasmonic enhancement printing structures. Continuous mode of operation will allow high throughput and low cost production. We anticipate the technology will enable the next generation of advanced products, such as high efficiency 3D solar cells, building-integrated PVs, smart glass and superior quality coatings with anti-reflective, anti-glare, self-cleaning and anti-fog qualities, said Boris Kobrin, CEO and President of Rolith. We are delighted to partner up with SÜSS MicroTec who is known for their world class designs and excellent customer service. With their 60 years of experience with optical lithography systems SÜSS

MicroTec has the necessary expertise and network to help Rolith to bring this much needed technology to market. Our recent achievements with nanoimprint lithography systems have made us a leading expert for structuring substrates in MEMS and nano applications, stated Frank Averdung, President and CEO, SÜSS MicroTec AG. Combined with our flexible equipment solutions the novel optical nanolithography technology by Rolith has the potential to bring high volume nanoimprint technology to market by fundamentally changing the cost structure compared to current technologies.

MiaSolé Commercial-Scale CIGS Solar Modules Achieve 15.7% Efficiency A square meter area of the firm’s thin film CIGS modules was verified to have 15.7% conversion efficiency by NREL. MiaSolé, a leading manufacturer of copper indium gallium selenide (CIGS) thin-film photovoltaic solar panels, today announced that the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) independently confirmed the 15.7% efficiency of its large area production modules (1 square meter in size). The 15.7 % module efficiency closely follows the previously announced 14.3% efficiency in September 2010. This is the highest efficiency demonstrated for commercial size thin-film modules and effectively closes the gap with polycrystalline silicon module efficiencies. “This is a significant accomplishment as it represents the ability to manufacture full scale CIGS modules with efficiencies equal to or better than that of polycrystalline silicon modules available in the world today but manufactured at a thin-film cost structure. We are pleased that we are executing ahead of our roadmap for efficiency improvements and feel confident in our ability to bring high efficiency CIGS technology to the market place,�said Joseph Laia, CEO of MiaSolé. MiaSolé has previously announced that it would start shipping its 13% efficiency modules in the second quarter of 2011 upon completion of UL and IEC certifications.


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This is a very exciting result, especially when it comes so soon after the previous 14.3% achievement from last September, NREL solar researcher Rommel Noufi said. An almost 1.5% absolute increase in efficiency in such a short time on a continuous roll-to-roll manufacturing line is impressive and demonstrates good process control and a validation of the MiaSolé approach. This achievement significantly narrows the efficiency gap between manufacturing performance and cells produced in the laboratory (20.3%), Noufi pointed out. It also moves CIGS technology well on its way to achieving DOE’s target of $1 per Wp photovoltaic systems, he said. MiaSolé now offers bank financeable solar modules with efficiency comparable to polysilicon combined with the lower manufacturing costs of thin-film modules. MiaSolé’s unique manufacturing process deposits CIGS on a flexible stainless steel substrate and produces all of the layers required for its highly efficient solar cell in a single continuous process. MiaSolé is the only thin-film solar company that uses sputtering processes in every step of the coating process of the solar modules, thereby reducing manufacturing time and cost of production. MiaSolé will ship 22MW in 2010. The company’s products are designed for utilities and independent power producers to use in industrial scale deployments such as large-scale rooftop and ground mount installations. NREL is the U.S. Department of Energy’s primary national laboratory for renewable energy and energy efficiency research and development. NREL is operated for DOE by The Alliance for Sustainable Energy, LLC. MiaSolé is a pioneer and leading developer of copper indium gallium selenide (CIGS) thin-film photovoltaic solar panels, one of the lowest-cost, highest efficiency solar panels in the world. MiaSolé’s primary mission is to advance the extraordinary potential for harnessing solar power as a competitive, sustainable energy source and enable grid parity by 2012. Based in California, MiaSolé currently operates two manufacturing facilities.

Centrotherm Smiling With 14.4 % of Sunshine PV The initial investment of a single-digit amount in millions of euros in the CIGS solar cell manufacturer is part of a capital increase. The stake is to be expanded to a total interest of around 25 % early next year. Centrotherm photovoltaics has purchased 14.4 % of the share capital of Taiwanese CIGS thin film solar module manufacturer Sunshine PV. Wholly-owned centrotherm photovoltaics subsidiary Photovoltaics Asia Invest Pte. Ltd., Singapore, has invested a single-digit amount in millions of euros in Sunshine as part of a capital increase. The stake is to be expanded to a total interest of around 25 % early next year. With the share purchase, centrotherm photovoltaics has taken an important strategic step to introduce new second-generation selenium plants at Sunshine, thereby advancing centrotherm photovoltaics’ CIGS thin film technology. The investment enables a close cooperation with Sunshine that allows manufacturing systems to be operated and further optimized under real mass production conditions. “We are pleased to further develop this second thin-film generation jointly with Sunshine. CIGS thin-film technology offers enormous potential. With this step, we are backing this future market in a targeted manner”, comments Frank Stubhan CEO of centrotherm photovoltaics AG’s Thin Film Module division. “We are currently experiencing major interest for CIGS technology from potential new customers.” Together with its Taiwanese customer, the South German company is working on boosting efficiency and throughput at the pilot plant. Sunshine is currently starting to sell the first modules from its Taiwanese production base. Centrotherm photovoltaics AG, which is based at Blaubeuren, is a leading technology and equipment provider for the photovoltaics sector. The company equips well-known solar companies and new sector entrants with turnkey production lines and single equipment to manufacture silicon, crystalline solar



cells and thin film modules. As a consequence, the Group possesses a broad and well-founded technological basis as well as key equipment at practically all steps of the photovoltaics value chain. centrotherm photovoltaics guarantees its customers important performance parameters such as production capacity, efficiencies, and completion deadlines. The Group employs around 1,400 staff, and operates globally in Europe, Asia and the USA. centrotherm photovoltaics achieved revenue in the 2009 financial year of €509.1 million, EBIT of €37.2 million, and is listed in the TecDax of the Frankfurt Securities Exchange.

Camstar Software Platform Drives MiaSole CIGS Forward The rapidly growing CIGS solar panel manufacturer has implemented the Camstar’s SolarSuite enterprise platform throughout its entire manufacturing series in just 60 days. Camstar Systems, has announced that MiaSole, a leading manufacturer of Copper Indium Gallium Selenide (CIGS) thin-film photovoltaic solar panels, has deployed its SolarSuite enterprise software platform throughout its entire Solar manufacturing value chain. As an industry innovator, MiaSole is growing rapidly, and the scalable manufacturing platform enables the company to shorten time-to-volume, improve product quality and reliability, and rapidly develop, roll out and enforce best known methods across new lines and plants. “MiaSole is committed to providing innovative, top quality solar products that cost-effectively meet the needs of our customers,” said Kevin Eassa, Vice President of Operations for MiaSole. “Camstar’s SolarSuite provides visibility and consistent control over our manufacturing processes and resources. Access to a rich set of process intelligence accelerates our ability to continuously innovate and improve while we expand operations.” “MiaSole’s rapid volume growth mandated a fast implementation that would immediately sustain high-volume transactions. We were impressed with

the inherent configurability and high performance of Camstar’s platform that made it possible,” said Amiya Ranjan, Sr. Director of IT for MiaSole. “We applied a proven, phased, rapid deployment methodology and brought the solution into production in just 60 days, starting with resource and WIP tracking. We then added integration with process equipment controllers that allows automatic collection of very-high volume data and transactions. Instant visibility into equipment states, work-in-process and genealogy helps us meet or exceed target product quality, productivity and cost goals,” continued Ranjan. “Camstar is seeing rapid adoption of our solutions across the Solar industry,” said Rob Rudder, Sr. Vice President of Global Sales and Marketing for Camstar. “As these companies race to bring innovative products to market, they realize that product quality will distinguish the winners in the cost per watt battle. MiaSole is the top innovator among their peers, and they recognize the absolute necessity of a comprehensive platform for manufacturing execution and quality that integrates with the rest of the systems landscape, including shop floor automation, ERP and PLM systems.” MiaSole is a pioneer and leading developer of Copper Indium Gallium Selenide (CIGS) thin-film photovoltaic solar panels, one of the lowest-cost, highest efficiency solar panels in the world. MiaSole’s primary mission is to advance the extraordinary potential for harnessing solar power as a competitive, sustainable energy source and enable grid parity by 2012. Based in California, MiaSole currently operates two manufacturing facilities. Camstar is a leading innovator of software solutions that advance product quality in the manufacturing industry, enabling its customers to deliver the highest quality products on time, the first time and every time. The Camstar Enterprise Platform advances product quality throughout the product lifecycle, from design to planning to supply to manufacturing to customer product experience – all in a closed-loop learning process that allows future products to be designed better and manufacturing processes to be leaner and more efficient. Camstar is the largest in its market, providing solutions for manufacturing execution, process planning, enterprise quality management and



supply chain intelligence. For over 20 years, Camstar has served hundreds of satisfied customers worldwide, including Abbott, AMD, Amkor, Arcelor, BAE Systems, Beijing SE Potevio Mobile Communications, BIOTRONIK, Boston Scientific, Canadian Solar, CIBA Vision, Cisco, Emcore, Ericsson, Hitachi, Honeywell, IBM, Intevac, Kodak, Life Technologies, Luvata, MiaSole, Motorola, Nortel, Noven Pharmaceutical, NXP, Panasonic, Q-Cells, Roche, SanDisk, Siemens, Stryker, Xilinx, Zeiss and ZOLL.

Nazca Completes Installation of Record Solyndra Project in France Nazca a platinum provider of Solydra’s cylindrical PV rooftops has completed a Solyndra 1.28 MW System on “Port de Barcelona” Warehouse. US firm Solyndra, a manufacturer of cylindrical photovoltaic (PV) systems for large commercial rooftops, has announced that Nazca, a Platinum Solyndra Solution Provider, has completed a 1.28 MW solar system installation on a large warehouse close to Toulouse, France. The warehouse was built by the GSE group, of which Nazca is a subsidiary, and subsequently sold to the “Port de Barcelona,” one of the main commercial transport and distribution arteries in the Mediterranean area. The port of Barcelona is a founding member of the Toulouse Goods Terminals which were created to bring port services closer to end customers. This is the largest Solyndra system in France and one of the largest worldwide. “We expect the French solar industry to focus on innovative and high value rooftop installations in the next year and this project, with a strong partner like NAZCA, stands as a great example of the benefits of Solyndra solar systems,” said Clemens Jargon, Solyndra’s president of EMEA and managing director, Solyndra GmbH. “In a short amount of time, they were able to install the Solyndra system with more than 70% net photovoltaic roof coverage, resulting in a maximized power density and renewable energy production.”

“This was a large undertaking for Nazca and the Solyndra product and tight support teams made it easy to install the panels and bring the project to the roof quickly,” said Julien Puel, CEO of Nazca, SAS. “GSE Group, who rents the warehouse rooftop and operates this MW size Solyndra PV installation, is demonstrating its commitment to sustainability and green business practices while achieving a fair return on their system investment.” The building concept is exploiting a number of Solyndra system advantages including the system’s light weight. Solyndra’s non-penetrating mounting system, with no ballast, allowed Nazca to design a system that generated significant power without requiring additional engineering. The system, installed on a new, white reflective “cool roof,” consisted of more than 7000 Solyndra panels and will generate 1360 MWh/year of photovoltaic electricity. According to the EPA carbon calculator this is the equivalent of powering 600 households. Michel Hugues, GSE founder and president, stated, “Solyndra has proven itself in hundreds of installations around the world and we are confident that this system will produce the energy and revenues that we have modeled. Solyndra has a wealth of reliability and performance data that was very helpful as we worked to secure financing for the system.” Nazca acts as a fully integrated EPC contractor. The scope of services cover: (i) overall project development (choice of technology, installation design, building and waterproofing audit), (ii) PV plant construction, (iii) grid connection, (iv) operations and maintenance of the system. Nazca was founded by GSE in late 2007, and has ever since developed and implemented photovoltaic



systems in excess of 10 MW. Their project portfolio exceeds 30 MW, exclusively in the French market at the time being. For 2011, Nazca contemplates international development. Solyndra designs and manufactures solar photovoltaic systems for the large commercial rooftop market. Using proprietary cylindrical modules and thin-film technology, Solyndra systems are lightweight and non-penetrating, and the fastest and easiest to install solar panels for rooftop applications. This allows Solyndra to achieve the lowest system installation costs on a per watt basis for the commercial rooftop market. Solyndra manufactures its rooftop solar panels and unique greenhouse solar system in the United States and is headquartered in Fremont, California.

QuantaSol Moves into Pilot Production The UK based startup has successfully provided potential customers with samples and hopes its triple junction solar cells will take off. QuantaSol, an independent designer and manufacturer of tunable ultra high efficiency concentrated photovoltaic (CPV) solar cells, is moving into pilot production following a successful period of global customer sampling. QuantaSol’s technology, based on adding multiple quantum wells to triple junction solar cells, greatly enhances photovoltaic conversion efficiency and offers system manufacturers a route to achieving breakthrough improvements in the performance of their CPV system whilst driving down the cost per kWh. The company has been sampling with customers across Europe, Asia and the USA for several months, and has worked closely with leading system vendors to enhance their systems by maximizing energy harvest. Chris Shannon, QuantaSol’s CEO commented, “Our technology has always been focused on achieving maximum efficiency and power output in real-world conditions, and this has been pivotal in moving forward from the lab stage towards

production. Working with some of the best in the industry, we have been able to demonstrate genuine advantages in cost per kWh terms and this is a positive achievement for the solar industry.” To date, QuantaSol has successfully accumulated an order book of more than 1MW of cells, and these will be delivered through the first half of 2011.

Thin-Film Photovoltaic Market To Hit $5.9 Billion in 2016 Nanomarkets says that the TFPV materials markets will generate $5.9 billion ($US) in 2016 compared to $2.1 billion in 2011. NanoMarkets, a provider of market research in the thin-film photovoltaics (TFPV) space, has just published its latest report on the markets for materials sold for TFPV applications. According to the report “Thin-Film Photovoltaics Materials Markets, 2011 and Beyond,” despite the end of the silicon shortage and ongoing economic woes, the TFPV materials markets will generate $5.9 billion ($US) in 2016 compared to $2.1 billion in 2011. The report is part of NanoMarkets ongoing coverage of thin-film and organic PV markets and includes its latest projections on material sales for thin-film silicon (TF Si), cadmium telluride (CdTe) and CIGS PV. Additional details for the report are available at www.nanomarkets.net. Press executive summaries are available upon request. NanoMarkets believes that, despite its maturity, TF Si PV will retain its competitiveness as this technology shifts towards using tandem cells using microcrystalline silicon. Key beneficiaries of this shift will be silane suppliers. Revenues from TF Si PV absorber materials will reach approximately $975 million by 2016. However, also by 2016 the largest segment of the TFPV material sector will be CdTe absorber materials, which, by then, will reach $1.6 billion. This represents an important opportunity for suppliers of CdTe materials to qualify as a supplier



to the dominant CdTe panel maker, First Solar, who is increasingly in need of more materials sources. The growing use of tellurium also presents an opportunity for companies in the copper and lead refining industry, since tellurium is primarily a byproduct of refining these ores. Despite the disappointments of the past, NanoMarkets sees product and manufacturing announcements over the past year as beginning to vindicate the CIGS story. Dow’s CIGS based BIPV product and TSMC’s entry into the CIGS area promises a better future for CIGS. As a result, absorber materials sold into this space are expected to reach around $610 million by 2016. Where NanoMarkets sees hope in the CIGS space is in electrodeposition which it says is well matched to improving the cost performance of CIGS in a “low demand” economy. This report analyzes and quantifies the opportunities for materials in the TFPV space. In addition to providing eight-year forecasts of the core absorber materials, it also forecasts electrode, substrates and encapsulant markets. In addition, the report provides detailed profiles of the major firms influencing this space including: 5N Plus, Air Liquide, American Elements, Apollo Solar Energy, Applied Materials, Dow Corning, DuPont, Evonik, Indium Corporation, Linde, Oerlikon, Praxair, Redlen, Sputtering Materials, Ulvac, Umicore and Voltaix. NanoMarkets tracks and analyzes emerging market opportunities in energy and electronics markets created by developments in advanced materials. The firm is a recognized leader in TFPV market research and industry analysis.

Spectrolab Starts Mass Production of “Highest Efficiency” Solar Cell After setting a new world record for efficiency with a test cell that peaked at 41.6 % the firm has entered production with essentially the same technology. The firm plans to deliver the first of these 39.2 % efficiency cells in January. Boeing subsidiary Spectrolab has started mass

production of its newest terrestrial solar cell, the C3MJ+. With an average conversion efficiency of 39.2 %, Boeing says its C3MJ+ will be the industry’s highest-efficiency cell. The concentrator photovoltaic (CPV) cells -- used for renewable energy -- draw on Spectrolab’s 50-year history of manufacturing solar cells for space and terrestrial applications and are an improvement on the C3MJ cells currently in production, which convert 38.5 % of the sun’s rays into energy. “These more efficient cells are drawing interest from a number of current and potential customers,” said Russ Jones, Spectrolab director of CPV Business Development. “Last year we set a new world record for efficiency with a test cell that peaked at 41.6 %. We now have entered production with essentially this same technology and plan to deliver the first of these 39.2 % efficiency cells in January.” Spectrolab has introduced mass production of a new series of solar cells with increased energy-conversion efficiency each year since 2007. The current C3MJ series entered production in mid-2009. More than 2 million C3MJ cells have been sold to customers around the world. “Given the new cells’ close similarity to our existing production cells, we believe that our current C3MJ customers will be able to easily upgrade for more efficiency,” Jones added. Spectrolab is a leading supplier of multi-junction photovoltaic solar cells, solar panels, searchlights and solar simulators and recently celebrated its 50th anniversary. Spectrolab products have powered satellites since 1958 and have contributed to the on-orbit success of numerous commercial, national security, and civil space missions. Spectrolab’s technological advancements have driven space solar cell efficiencies to more than 28 %. Today, Spectrolab claims its cells power 60 % of all satellites orbiting the Earth, as well as the International Space Station. Spectrolab has made significant investments to meet the increasing demand of the terrestrial concentrator photovoltaic industry and expects to achieve a 40 % average production efficiency for terrestrial solar cells in 2011. A unit of The Boeing Company, Boeing Defense,



Space & Security is one of the world’s largest defense, space and security businesses specializing in innovative and capabilities-driven customer solutions, and the world’s largest and most versatile manufacturer of military aircraft. Headquartered in St. Louis, Boeing Defense, Space & Security is a $34 billion business with 68,000 employees worldwide.

Sol Array’s PVD Process Produces Cheap & Efficient CIGS Solar Cells The firm has unveiled its first CIGS thin-film solar cell made using a unique PVD process, specifically tailored for mass scale production. Sol Array’s process uses commercially available, inexpensive soda-lime glass as the substrate material. The firm uses a simple continuous in-line PVD process for deposition of all of its CIGS thin-films stack and a 4-element compound target for one-step deposition. This eliminates the cumbersome co-evaporation of various CIGS elements for the formation of the active CIGS layer, ensuring consistency and repeatability in mass scale production, thus providing a highly efficient and low cost manufacturing process. The company is yet to disclose its sample cell conversion efficiency as further verification and authentication of its tested sample is pending, but it says early results match current industry standards. Sol Array says it is strategically positioned for basing its research and patenting revenue in the US market and its scale-up production in Dong Guan, China, where substantial government stimulus program beckons. Headed by a veteran in the flat panel display industry for over a decade, Jimin Ma has assembled a special team of seasoned thin-film technologists and automation specialists for product development and system engineering. The global thin-film Photovoltaics market is expected to reach $7.2 billion by 2015, compared to just over $1 billion in 2007, according to a marketing report by NanoMarkets. Annual thin-film

solar production has now exceeded half the US market share and will do so worldwide by 2015 and, within the thin-film solar industries according to “Information Network” CIGS should surpass CdTe and amorphous silicon by 2012. According to Information Network, CIGS has the highest theoretical conversion efficiency as it can absorb over 99% of sunrays and has the highest current density. CIGS ranks the highest in conversion efficiency for laboratory samples among all other thin-film solar technologies, although its success is yet to be proven for commercial production. Furthermore, a CIGS efficiency of 20.5% has been reported for small-area, experimental cells, by far the highest efficiency among all thin-film solar technologies. CIGS is also free from adverse environmental impact and it’s not threatened by the poisonous by-product such as Te in CdTe thin film cells. CIGS has the potential, says Sol Array, especially when employing its manufacturing process, to be the lowest cost for volume production making it suitable for large-area, automated production. The firm also claims that CIGS films retain performance properties better than most other solar semiconductors. Looking at the commercial solar industrial as a whole, there is much evidences of a CIGS trend; major players such as Honda Soltec, Shell, Daystar, Ascent Solar, Global Solar, HelioVolt, Miasole and Nanosolar are all pursuing CIGS for their scale up production. For laboratory research, the pursuit of so call Alpha Phase CIGS is fast approaching maturity, hovering around 20%+/- range, the immediate challenge rests more with the commercialization of CIGS cells, aiming for high volume, low cost, and a repeatable process that can promise economic vitality. Sol Array has a network of technology talent pools based in the US and other European research institutions for product development and patent revenue; the company has established China as its primary manufacturing base, not only for the benefit of long term production cost control, but more importantly, in capturing the blossoming market



expansion within China’s insatiable energy market needs. Collaborators of Sol Array are based in the USA, Europe and China, with tailored vacuum deposition facilities aimed specifically for mass scale production. Institutions include universities, electro-optical & environmental testing facilities and materials suppliers. The core management of Sol Array has been shifted from the former thin-film flat panel display company, Lite Array where the cross fertilization of the founding team, between the thin-film display industry and the thin-film solar industry, ensures the Company a high yield, high volume and highly cost-effective solar cell production process. For a commercially viable production process and to attain Alpha Phase CIGS thin-films, Sol Array has overcome a number of challenges. The pulse DC sputtering process is ideal for repeatability in the thin-film stack thicknesses and uniformity. The combined thickness of the active layer is less than 1.8 microns, with the thinnest layer less than 50 nanometers. Repeatability in stoichiometry among each thin-film layer is equally critical; the experiments carried out in an affiliated research institute, employing Pulse DC Sputtering for all 4-elements compound deposition and without selenization, has proven successful, delivering a high density, pin-hole free thin-film stack. The percentage proportion of each of the 4-element compound active layer: in copper, indium, gallium and selenium, where Alpha Phase CIGS can tolerate no more than 0.5% deviation in atomic weight of any particular element content is equally critical - none other than a fully automatic controlled process can come close to delivering the repeatability of such objectives says Sol Array. Repeatability in the crystal lattice arrangement is a difficult requirement to meet for conventional evaporation techniques but the firm�s PVD method makes it easier to fulfill. Furthermore, the process is claimed to ensure a consistent interface between the p-type CIGS absorbing layer and the doped surface n-type layer near the interface CdS buffer layer.

A 20 MW pilot production line, employing the aforesaid process and system engineering, will commence in early spring 2011 pending infusion of addition capital to be raised from various on-going funding activities. Sol Array is an international player in solar photovoltaic R&D, product development, scale up production and system design. Collaborations presently extend through the USA, UK & China, with vacuum deposition facilities, university liaison & materials suppliers. Other institutions are also involved in the electro-optical & environmental testing of modules.

Solar3D Breaks Through With 3-D Solar Cell The company’s re-engineered solar cell aims to achieve high efficiency silicon at the low cost of thin film. Solar3D, a developer of a breakthrough 3-dimensional solar cell technology to maximize the conversion of sunlight into electricity, today announced that the Company has filed a patent application for its innovative solar cell design and methods of fabrication. “With the filing of this patent, we are poised to create something truly exciting,” said Jim Nelson, CEO, Solar3D. “Many industry observers and analysts have said that for the solar industry to truly make a difference, the developers of the next generation solar technologies will have to step up. This application represents our intention to step up and make a real difference in the world.” Inspired by light management techniques used in fiber optic devices, the company’s innovative solar cell technology utilizes a 3-dimensional design to trap sunlight inside micro-photovoltaic structures where photons bounce around until they are converted into electrons. The company’s management believes that this breakthrough solar cell will be dramatically more efficient, resulting in a lower cost per watt that will make solar power affordable for the world. According to Mr. Nelson, “Our objective is grid



parity or better. By re-engineering the solar cell to manage the light and extract all of its available power, we intend to make it: (1) significantly more efficient and (2) production friendly. In doing so, we attack the economic issue from both sides to deliver electricity at a substantially reduced cost per kilowatt hour. While our 3-D technology can be applied to various photovoltaic materials, such as gallium arsenide, we are currently focused on using silicon, an abundant material with a very mature production industry. We intend to push silicon to its theoretical limits.” “We believe that the Sun, an infinite source of energy, should be used to provide a substantial percentage of electricity used by the world. By combining micro-photovoltaics with advanced light management technology into a novel 3-dimensional solar cell, we believe that will be possible,” Mr. Nelson concluded. Solar3D is developing a breakthrough 3-dimensional solar cell technology to maximize the conversion of sunlight into electricity. Up to 30% of incident sunlight is currently reflected off the surface of conventional solar cells, and more is lost inside the solar cell materials. Inspired by light management techniques used in fiber optic devices, our innovative solar cell technology utilizes a 3-dimensional design to trap sunlight inside micro-photovoltaic structures where photons bounce around until they are converted into electrons. This next generation solar cell will be dramatically more efficient, resulting in a lower cost per watt that will make solar power affordable for the world.

Solyndra & Sika Unite to Win The PV Rooftop Fight The strategic collaboration will work together to promote Sika’s highly reflective roofing products together with Solyndra’s rooftop photovoltaic systems.

Solyndra, a manufacturer of cylindrical photovoltaic (PV) systems for large industrial and commercial rooftops, has signed a multi-year sales agreement with Sika Services AG, a manufacturer of roofing materials headquartered in Baar, Switzerland.

The companies will work together to promote Sika’s

highly reflective roofing products together with Solyndra’s rooftop photovoltaic systems.

“Sika has a strong reputation as a supplier of roofing materials and photovoltaic systems worldwide. We are pleased to work together with them to develop a powerful combined offering for the challenging environment of the commercial rooftop solar market,” said Clemens Jargon, Solyndra’s President EMEA and Managing Director at Solyndra “Their knowledge of rooftops and materials combined with our expertise in solar systems will help us work together to generate the highest amount of energy from commercial and industrial rooftops.”

“We have found the lightweight, non-penetrating Solyndra system to be an excellent complement to our highly reflective rooftop materials and as interest in reflective, cool roofs, grows in Europe our two companies will work together to present a strong combined offering to our customers,” said Heinz Meier, Sika’s Corporate System Engineer Solar. “Both companies have built their reputations by providing durable, lasting systems that will protect and generate power from rooftops for more than 20 years at the highest level of quality.”

The agreement will initially focus on markets in Germany, France, Italy, United Kingdom, Spain, Slovenia and the Czech Republic, where Sika has a leading position providing roofing solutions including highly reflective membranes.

Sika is a technology leader in construction chemistry and is present in 74 countries, with over 12,500 employees. Sika’s product range features high-quality concrete admixtures, specialty mortars, sealants and adhesives, damping and reinforcing materials, structural strengthening systems, industrial flooring as well as roofing (single ply PVC, FPO and Liquid Applied Membrane) and waterproofing.

Apollo Solar Signs 5 Year Contract With Major Solar Company Apollo will provide 5N ultra-high purity tellurium, the core material of CdTe thin film solar PV, with projected sales of approximately 730 million RMB



(USD 110 million). Apollo Solar Energy, a provider of high purity tellurium (Te) and tellurium based metals for the CdTe/CIGS Thin Film solar photovoltaic (PV) industry has signed a five-year purchase contract with a major worldwide solar panel manufacturer. According to the contract, Apollo will provide 5N ultra-high purity tellurium, the core material of CdTe thin film solar PV, with projected sales of approximately 730 million RMB (USD 110 million) over a 5 year period. “We have been cooperating closely for the past five years with this manufacturer and we believe this purchase contract will be a win-win strategy for both of us in the long run.” said Jingong Pan, CEO of the Company. Apollo Solar Energy, through its wholly owned subsidiary, Sichuan Apollo Solar Science & Technology, is primarily engaged in mining, refining and producing tellurium (Te) and high-purity tellurium based metals for specific segments of the electronic materials market. The Company’s products include CdTe thin-film compounds, CIGS thin-film compounds, ultra-high purity metals and commercial-purity metals.

Where Moore’s Law Impacts the Solar Market ISuppli says that Module Level Power Management (MLPM) systems are gaining traction in photovoltaics The Silicon Valley mantra of smaller, faster, cheaper hasn’t really applied to the Photovoltaic (PV) market, until recently, that is, when micro-inverters and optimizers started being employed in solar installations, according to the solar market research firm iSuppli. Rather than reducing costs the way microchips do—by becoming smaller and faster—PV systems historically have achieved the “cheaper” part of the equation by delivering on the three efficiencies of solar technology: efficient energy conversion, efficient manufacturing methods and efficient use of materials.

However, the PV market is beginning to take a page from Moore’s Law with the arrival of Module Level Power Management (MLPM) systems, a product area consisting of micro inverters and optimizers. MLPM systems are beginning to gain favor because of the increased energy harvest that they enable at the individual module level instead of the total module string level. Depending upon the location of installation, such as “shadowing” conditions, MLPM solutions can harvest 3 % to 20 % more kilowatt hours of PV electricity during the course of a year. And while they cost significantly more per watt than traditional inverters, that gap is rapidly narrowing. As a result, total MLPM shipments are forecasted to reach 7.8 Gigawatts (GW) by 2014, managing a Compound Annual Growth Rate (CAGR) of a whopping 204.3 percent, up from just 30 megawatts in 2009.

Micro-inverters perform the same general functions as traditional inverters except that they work on a per-module basis rather than for a string of modules. Optimizers perform the Maximum Power Point Tracking (MPPT) algorithm and are often used in conjunction with a string inverter that has been cost-reduced by removing the MPPT function. Applying Moore’s Law How does Moore’s law play a factor in these systems? The Bill of Materials (BOM) for MLPM systems are more chip intensive than that of regular inverters. Micro-inverters also are adopting some of the latest advanced semiconductor technologies, such as Gallium Nitride (GaN) power components. Being chip intensive is actually helping these systems by allowing them to drive out costs, as they benefit from functional integration and the



lower power draw from the constantly evolving chip-process technologies. The use of chips is also allowing MLPM system providers to offer much longer lifetime warranties than traditional inverters, to 15 years and beyond—which more closely aligns with the payback lifetime of PV installations. The U.S. residential installation market, in particular, has fallen in love with micro-inverters as they make it easier to design a PV system for a specific roof. Optimizers have found an interesting interim market in which they are being used to boost the harvest of already installed modules that have dropped below installation warranty levels. Optimizers are also used to create so called Smart Panels—a possible margin-enhancing path for module suppliers. iSuppli believes that traditional string and central inverters will continue to be preferred in many regions and applications, especially utility-scale projects, but that MLPM solutions are set to seriously penetrate the rest of the installation market. iSuppli’s unique market research reports help deliver vital information on the status of the entire electronics value chain.

Cost is King in Battle for Solar Dominance Cadmium telluride (CdTe) technology remains the long term leader in terms of cost-of-goods-sold (COGS). Led by First Solar, CdTe has a significantly lower cost structure than mc-Si, and its cost reductions are expected to march onward.

In the face of renewed pricing pressures, solar device manufacturers have had to refocus on minimizing costs and maximizing performance to maintain profit margins. Advances in crystalline silicon technology, and the falling cost of the polysilicon raw material, have only increased the pressure on manufacturers of emerging thin-film technologies, including thin-film silicon (TF-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) – many of which are under the gun to improve margins or face extinction, according to a new report from Lux Research.

The report, titled “Module Cost Structure

Breakdown: Can Thin Film Survive the Crystalline Silicon Onslaught?,” compares incumbent multicrystalline silicon (mc-Si) technology (representing roughly 80% of the crystalline silicon market) on a $/W basis against three challengers: thin-film silicon (TF-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). The report surveys process changes and cost reduction efforts that module developers have undertaken, and forecasts which technology will gain a long-term cost advantage at the module level.

“Crystalline silicon is dominant by volume and remains the cost/price benchmark for solar modules. Cadmium telluride is limited in efficiencies, but is the absolute leader in cost. We project these two technologies will continue to be highly profitable,” said Ted Sullivan, a senior analyst for Lux Research, and the report’s lead author. “The profitability of thin-film silicon is much dicier, but CIGS is positioned to outplace crystalline silicon in profitability by 2013 as leading developers improve process stability.”

To forecast how module developers would reduce the key components of cost – capital, materials, utilities, and labor – Lux Research built detailed cost-of-goods-sold (COGS) models for the four key technologies – mc-Si, TF-Si, CdTe and CIGS – through 2015, including both glass and flexible substrates for CIGS. Among the report’s key observations:

Multicrystalline silicon remains highly profitable as COGS decline. The dominant technology will continue to be profitable throughout the value chain as vertically integrated players drive cost from $1.45/W in 2009 to $0.93/W in 2015, assuming poly pricing at $70/kg. Efficiency will be a key driver of cost reduction, rising from 14.0% in 2009 to 16.1% in 2015.

Oerlikon will give thin-film silicon new legs. Improvements enabled by Oerlikon’s new ThinFab line will push thin-film silicon efficiencies from 9.0% to above 11.0%. Significant improvements in output will cut depreciated capex per watt, and help to reduce TF-Si costs from $1.32/W in 2009 to $0.80/W in 2015.

CdTe technology remains the long term leader in terms of COGS. Led by First Solar, CdTe has a significantly lower cost structure than mc-Si, and its cost reductions will march onward, keeping it



the most profitable solar technology, as COGS falls from $0.80/W in 2009 to $0.54/W in 2015.

Costs for select CIGS technologies have dropped dramatically. CIGS sputtered on glass – which is Lux Research’s benchmark given its critical mass of developers – will see COGS plummet from $1.69/W to $0.76/W as efficiency improves from 10.0% to 14.2%, and factory nameplate capacity and yields grow, allowing the top developers to earn gross margins over 30%. “Module Cost Structure Breakdown: Can Thin Film Survive the Crystalline Silicon Onslaught?” is part of the Lux Solar Intelligence service. Clients subscribing to this service receive ongoing research on market and technology trends, continuous technology scouting reports and proprietary data points in the weekly Lux Research Solar Journal, and on-demand inquiry with Lux Research analysts. Lux Research provides strategic advice and on-going intelligence for emerging technologies.

SUSS MicroTec and Fraunhofer Unveil New Selective Surface Treatment The patent pending technology of Fraunhofer IST is based upon atmospheric pressure plasma selectively modifying the molecular level surface and should reduce the overall cost per wafer. SUSS MicroTec and Fraunhofer for Surface Engineering and Thin Films IST have launched SELECT, a technology for bond aligner and mask aligners that selectively activates parts of wafer surfaces through plasma. Local treatment of the surface prior to wafer processing replaces standard process steps and reduces the overall cost per wafer. Selective plasma activation can be applied to a variety of MEMS, optical and solar applications using direct wafer bonding or surface modification for the creation of micro mirror arrays, micro valves, sensors or micro fluidic channels. The SELECT toolkit is an upgrade option of SUSS MicroTec’s MA/BA8 Gen3. The patent pending technology of Fraunhofer IST bases upon atmospheric pressure plasma selectively modifying the molecular level surface.

Conventional surface treatment of complete wafers without selection can damage the functionality of micro components or electronics. With selective treatment it is possible to protect those sensitive areas by activating only specific parts of the wafer. Selective plasma activation is used with planar wafers as well as with topography wafers where plasma activation is provided either in the cavities or on the elevated structures. “While selective plasma treatment in wafer bonding applications significantly reduces the post-bond anneal temperature from 1000°C down to 200°C, it also protects sensitive devices. The technology therefore impressively increases the process window for direct bonding”, said Günter Bräuer, the director of the Fraunhofer IST. “With SUSS MicroTec’s SELECT toolkit applied in both direct bonding as well as other wafer processing applications a ground-breaking new approach seems possible for device processing in the semiconductor industry.” “The treatment of selected parts of wafers reduces the costs of producing a device through streamlining processes and increasing throughput at the same time”, explained Frank Averdung, President and CEO of SUSS MicroTec AG. “The new technology has the potential to completely change the cost-of-ownership model for a large variety of applications. This creates an interesting opportunity for the customers of our latest manual mask aligner generation.”

HelioVolt and NREL To Continue Advancement of CIGS HelioVolt and US National Renewable Energy Laboratory (NREL) are collaborating to find ways of manufacturing the lowest cost thin-film CIGS photovoltaics.

HelioVolt is extending the Cooperative Research and Development Agreement (CRADA) for research carried out at NREL’s facilities to jointly develop the fastest and most efficient way to manufacture low-cost thin-film CIGS photovoltaics.



Both organizations have received many awards, including the 2008 R&D 100 Editor’s Choice “Most Revolutionary Technology” Award. They were honored for their work in liquid deposition Hybrid CIGS, for their significant impact on the solar market as well as in the field of nanotechnology.

“HelioVolt is deeply committed to our collaborative efforts with NREL. We continue to invest in the relationship because of the tremendous value our teams have jointly contributed to our technology evolution roadmap. CIGS modules are entering a very exciting commercial phase in the solar industry.

We believe that high conversion efficiencies - above 15% on a full size monolithically interconnected module rather than cell level - require developing innovative methods for producing nanoscale building blocks and synthesizing them into device-quality CIGS thin-film material. Our work with NREL provides us a sound foundation for realizing these goals,” said BJ Stanbery, HelioVolt’s founder and Chairman.

Many steps in conventional thin-film production require vacuum deposition, a process by which the thin-film material is coated onto the substrate in a very low-pressure vacuum chamber. Future non-vacuum deposition processes can be less capital intensive, but depositing CIGS films on large areas with the precision necessary to achieve both high performance and low manufacturing costs is difficult without the advantages of the FASST (TM) process.

HelioVolt and NREL’s efforts in developing non-vacuum atmospheric pressure deposition processes will offer a combination of lower cost, process simplicity, and reduced manufacturing time, while still delivering high-quality CIGS.

HelioVolt Corporation, based in Austin, Texas, is a manufacturer of the next generation of thin-film photovoltaic products. The company’s low-cost, rapid production methods for CIGS synthesis are protected by a broad patent portfolio. To date, HelioVolt has raised over $140M in venture financing to fund the company’s move to volume production and international expansion.

XsunX CIGS Module Hits 15.1 % Conversion Efficiency The firm’s cross-industry CIGSolar product is expected to advance at a tremendous rate towards the commercial market. XsunX, a developer of hybrid, thin-film photovoltaic (TFPV) solar cell technologies and manufacturing processes, has further enhanced the conversion efficiency levels of its cell devices to 15.1% based upon the Company’s CIGSolar technology. With other market-ready thin-film technologies functioning within the range of 8-11 % percent for solar modules, the CIGSolar technology illustrates conversion efficiency that may soon lead to gains over current technology. “The rate at which we’re experiencing percentage point gains is truly incredible considering only weeks ago we announced surpassing 14 % conversion efficiency,” said Tom Djokovich, CEO, XsunX. “Our confidence that small area co-evaporation processes is the key to delivering the best performance CIGS thin-film cells continues to be strengthened.” CIGS thin-film researchers have concluded the theoretical limit for CIGS solar technology tops at 29 % conversion efficiency, although the highest percentage ever achieved was 20 %in a laboratory setting. “It’s important to remember that we are developing our technology on the same size substrates we intend to use in our commercial systems, about the same size as a silicon solar cell, so the efficiency levels we achieve in the laboratory we believe will be transferable to what we can offer the market,” adds Djokovich. “Unlike current solar developers, we don’t anticipate having to struggle with the challenges of scaling product while maintaining laboratory efficiencies.” XsunX has achieved 15.1 % in a relatively short period of time and with less cost compared to other CIGS efforts that spanned many years and incurred significantly higher capital demands for less than similar results. This rapid success, coupled with the technology’s perceived value as



an alternate for the use of silicon solar cells, has accelerated the industry’s interest levels which have not only led to additional license discussions for XsunX but has also allowed the Company to work towards executing its plan to develop JV License agreements to deliver the technology package through existing manufacturers. This combination of leveraging existing branded manufacturers to deliver its systems and having branded module assemblers integrate the CIGSolar technology into their products allows XsunX to significantly reduce the need for debt or equity financing necessary to build factories directly while also providing bankability for its technology through proven manufacturers of solar modules. Deposition of the CIGS cell layers was conducted on full size 125 mm square substrates. Test configurations used to measure efficiency are identical to that used by the National Renewable Energy Laboratory and XsunX test equipment is calibrated to the standards of the National Institute of Standards and Technology (NIST) standards. XsunX is pioneering a new manufacturing process to produce low cost, high efficiency thin-film CIGS solar cells through the combination of thin-film photovoltaic (TFPV) process knowledge with select magnetic media thin-film manufacturing technologies pioneered in the hard disc drive industries. The company believes that leveraging small area and high rate production methods will reduce the processing defects plaguing large-scale production processes currently implemented in the marketplace.

Solarion Wins €60 million Contract with Major Asian Investor The CIGS module supplier has secured the investment from Walsin Lihwa to construct a solar fab with 140 employees in Leipzig, Germany. Through its wholly owned subsidiary, Ally Energy, Walsin Lihwa will invest €40 million and take a 49 % stake of Solarion, a specialist in flexible thin film CIGS solar cells and modules.

Under involvement of the Development Bank of Saxony the investment is awarded with a grant of more than €20 million. In the first instance, an integrated cell and module factory with an annual production output of 20 megawatts and a staff of 140 employees will be constructed in the near vicinity of the BMW Leipzig assembly plant. Subsequently the firm plans to set up a manufacturing plant with 180 megawatts of annual production capacity. In addition, both parties have signed agreements on technical cooperation and licensing in order to enhance the thin-film technology. After several years of development this paves Solarions’s way into mass production. “We are pleased that we have found Walsin Lihwa, a global player and a strong partner, to support our long-planned global expansion strategy of cost leadership,” explained Karsten Otte, CEO of Solarion. “Through our advanced technology and novel solar module properties, we will significantly decrease the cost of photovoltaic power generation.” “The company also received support of various sites in its recent development. We want to express our thanks especially to the Saxon Development Bank, CMS Hasche Sigle Düsseldorf, Euflex, Apricum and the Economic Development Offices of Saxony and Leipzig,” Otte concluded. “The CIGS technology has the highest efficiency potential in the photovoltaic thin film area. Together with the favorable cost structure of Solarion’s processes, we will attain a leadership position in the photovoltaics market,” said Yu-Lon Chiao, Chairman of Walsin Lihwa. “A sustainable energy supply is one of the most important social and political challenges. Therefore, the cooperation with Solarion is an important step in the business development of Walsin Lihwa.” “In the past years Solarion has developed a powerful solar technology in cooperation with research and industrial partners. I am especially pleased that this technology will be transferred into mass manufacturing together with the Asian company Walsin here in Central Europe. This



shows the high quality of this location.” said Sven Morlok, Saxon State Minister of Economic Affairs, Labor and Transport. The City of Leipzig has accompanied the development of Solarion for many years. In particular intensive efforts were undertaken by the Economic Development Office and the Environmental Protection Office to assist the young company on its way to success. Leipzig’s mayor Burkhard Jung remarked,”A company with such an innovative technology fits perfectly to our city and is an important addition to the development of the Energy City of Leipzig. Solarion AG creates many jobs in an area where we need them urgently. I hope the company is undergoing a fast development into a very strong partner as a member of our cluster energy and environmental technology.

CIS/CIGS Market Predicted to Grow Up to 43.9% CAGR MarketsandMarkets report ‘Thin Film PV- Advanced Technologies and Global Market (2008-2015)’ says that the CIS/CIGS market is expected to grow with a maximum CAGR of 43.9% from 2010 to 2015. Low cost and optimum efficiency of thin film PV cells is driving the growth of the thin film PV in overall photovoltaic market, says MarketsandMarkets. The global thin film photovoltaic market is expected to grow from $3,406 million in 2009 to $19,422 million in 2015, at an estimated CAGR of 32.2% from 2010 to 2015. The amorphous silicon market is currently contributing the maximum proportion to the total thin film PV market. On the other hand, CIS/CIGS are expected to grow with a maximum CAGR of 43.9% from 2010 to 2015. The ‘Thin Film PV- Advanced Technologies and Global Market (2008-2015) report analyzes the thin film market by different thin film PV cells and applications and studies the major market drivers, restraints, and opportunities and regions such as North America, Asia, Europe and Rest of World.

This research report categorizes the global market for thin film PV on the basis of types and geography; forecasting revenues and analyzing trends in each of the thin film cells. It covers consumer electronics, BIPV, grid connected power supply and military & space applications. MarketsandMarkets (M&M) is a global market research and consulting company based in the U.S. which publishes strategically analyzed market research reports and serve as a business intelligence partner to Fortune 500 companies across the world. MarketsandMarkets also provides multi-client reports, company profiles, databases, and custom research services. M&M covers thirteen industry verticals, including advanced materials, automotive and transportation, banking and financial services, biotechnology, chemicals, consumer goods energy and power, food and beverages, industrial automation, medical devices, pharmaceuticals, semiconductor and electronics, and telecommunications and IT.

Dow Solar CIGS Shingles Receive UL Certification The firm says its DOW POWERHOUSE Solar Shingle is the first to obtain the Underwriters Laboratories (UL) safety mark. The Dow Chemical Company’s POWERHOUSE Solar Shingle is the first residential solar roofing shingle with an integrated connection system to receive UL safety certification, says the firm. The Solar Shingle is a ground-breaking CIGS photovoltaic solar panel in the form of a solar roofing shingle that can be integrated into rooftops with standard asphalt shingle materials. It reduces installation time and complexity using a revolutionary system design that eliminates on-roof wiring, minimizes through-roof penetrations, and allows the product to be installed in the same manner as a standard roofing shingle.



“The receipt of UL safety certification represents the successful completion of a rigorous and comprehensive multi-test process for the DOW POWERHOUSE Solar Shingles,” said Dow Solar VP President, Jane Palmieri.

“This is another important milestone towards the planned 2011 commercialization of Dow’s solar shingles, and represents a crucial third-party validation of the safety of this product. We are dedicated to making solar easy for homeowners, builders, and roofing contractors who already trust the performance and safety of building products bearing the Dow brand.” Given the new and unique nature of the DOW POWERHOUSE Solar Shingle, Dow Solar worked closely with UL - a trusted global resource for product safety certification and compliance solutions - to indentify a series of rigorous tests to assess the safety of the unique design and of all the elements of the combined solar and roofing product. The final listing awarded to the DOW POWERHOUSE Solar Shingles represents compliance to a diverse sequence of UL’s safety and building standards, specifically, UL 746, 1703, 1897, 790, 486 and 514. Over 50 individual tests were conducted to assess the safety of the DOW POWERHOUSE Solar Shingles against building code standards, including wind and fire resistance, and electrical code requirements, such as proper wiring and photovoltaic (PV) connections. “UL has been leading the development of PV equipment testing methodologies and standards since the 1980s, and has contributed to the safe operation of PV equipment by providing safety testing and certification services for PV equipment

manufacturers worldwide,” said Jeff Smidt, VP and General Manager for UL’s Global Energy business. “In the case of Dow’s solar shingles, we had to take a unique approach in order to test the product as both a roofing shingle and a PV system. We are proud to provide the UL mark to this first-of-its-kind solar shingle from Dow.” In addition to the vitally important design and material safety tests performed by UL, Dow will continue with its own reliability and durability testing in support of commercialization. Dow is currently performing tests on installed systems of DOW POWERHOUSE Solar Shingles in addition to individual shingles in order to assess the durability of the product, utilizing Design for Reliability and Physics of Failure methodologies to measure performance against weather, extreme temperatures and more. Dow has chosen thin-film CIGS (Copper Indium Gallium deSelenide) as the PV material in the DOW POWERHOUSE solar shingle, and Global Solar Energy (Tucson, AZ) was selected as the preferred supplier in support of the product launch. CIGS technology is claimed to offer the best balance of low cost and highest sunlight conversion efficiency of the commercialized thin film technologies available today, and the flexible foil substrate of the Global Solar Energy CIGS cells provides the necessary level of flexural durability to allow the DOW POWERHOUSE Solar Shingle to perform reliably in a demanding application environment. Breaking the traditional barriers to residential solar adoption – complexity, affordability and aesthetics – this technology offers the missing link needed by the energy industry to drive solar adoption across the U.S., and will bring the possibility of safe and reliable solar power to American households. The DOW POWERHOUSE Solar Shingle is expected to be commercially available in select U.S. markets by mid 2011. In 2007, Dow received a $20 million grant from the U.S. Department of Energy as part of its Solar America Initiative to develop “building integrated” solar arrays for the residential and commercial markets. In October 2009, Dow Solar unveiled the DOW



POWERHOUSE Solar Shingle as the first in a portfolio of building related solar energy generating products. Since its introduction, the Solar Shingle has been hailed as revolutionary, including being named one of the “50 Best Inventions of 2009” by TIME magazine. The innovative product design provides an unprecedented integrated roof appearance and simplified installation. It combines a roofing shingle with a solar cell, enabling the DOW POWERHOUSE Solar Shingle to be installed by a roofer along with standard asphalt roofing materials. Dow’s diverse portfolio of specialty chemical, advanced materials, agrosciences and plastics businesses delivers a broad range of technology-based products and solutions to customers in approximately 160 countries and in high growth sectors such as electronics, water, energy, coatings and agriculture. UL is an independent product safety certification organization that has been testing products and writing Standards for Safety for more than a century. UL evaluates more than 19,000 types of products, components, materials and systems from more than 66,000 manufacturers each year. In total, there are more than 20 billion UL Marks appearing on products worldwide. UL’s global family of companies and network of service providers includes 68 laboratory, testing and certification facilities serving customers in 102 countries.

Spectrolab Ships 3 Millionth GaAs Solar Cell The Boeing wholly owned subsidiary shipped the multi-junction gallium arsenide (GaAs) space-based solar cell solar cell just last week. Spectrolab has produced its 3 millionth multi-junction, space-based solar cell. Production records indicate that the gallium arsenide cell was delivered during the week of 25 November/December 2010. Spectrolab has been manufacturing multi-junction solar cells for more than 15 years and other space products for more than 50.

“Congratulations to Spectrolab for this remarkable achievement,” said Craig Cooning, VP and general manager, Boeing Space & Intelligence Systems. “Our customers expect flawless satellites that can endure many years in space to enable national-security and Earth-observation missions, as well as consumer and business communications. Spectrolab’s solar cells have powered more than 500 satellites and interplanetary missions.” Since its founding in 1956, Spectrolab has led the way in the development of high-efficiency solar cells for space missions. During the Apollo 11 mission in 1969, a Spectrolab product became the first solar panel to be placed on the moon. Today, Spectrolab solar panels are the only panels in operation on Mars, as part of a reconnaissance satellite and two land-exploration rovers. Spectrolab recently delivered solar panels to the NASA-Jet Propulsion Laboratory JUNO mission, the first mission to Jupiter to be powered by photovoltaic cells. Spectrolab’s cells and panels power approximately 60 % of all satellites in Earth’s orbit, as well as the International Space Station. “Many years of continuous improvement in product design and high-volume manufacturing experience have allowed Spectrolab to develop mature, cost-effective and repeatable processes, resulting in the delivery of high-quality, reliable and affordable products to both space and terrestrial customers,” said David Lillington, president of Spectrolab. “Our business continues to grow as we gain market share. We are increasing productivity and introducing higher levels of automation to meet this increased demand. We expect to announce the production start of our next-generation space cells



early next year,” he continued. In 2001, Spectrolab embarked on a strategy to adapt its space solar cell technology for terrestrial renewable-energy applications. The terrestrial solar cells convert concentrated sunlight to electricity with an average efficiency of more than 38.5 % and benefit from the same equipment, materials and processes used for space manufacturing. In 2009, Spectrolab set a new world record in terrestrial concentrator solar efficiency with a triple-junction, lattice-matched cell that converts 41.6 % of sunlight into electricity. This year, Spectrolab will deliver approximately 50 megawatts of solar cells to its terrestrial concentrated photovoltaic customers and forecasts producing almost 150 megawatts in 2011. Spectrolab is one of the world’s leading solar cell manufacturers for space and terrestrial applications. A unit of The Boeing Company, Boeing Defense, Space & Security is one of the world’s largest defense, space and security businesses specializing in innovative and capabilities-driven customer solutions, and the world’s largest and most versatile manufacturer of military aircrafts.

PVflex CIGS Solar Modules Pass IEC Certifications The firm says its flexible CIGS modules, suited to rooftops, are the first to pass the IEC61646 and 61730 certifications. PVflex says that its flexible production-ready CIGS solar module was the first to be completely certified according to IEC61646 and 61730. German headquartered firm PVflex Solar intends to establish further sample plants with this module type during the next few months. A large-scale technical production and a takeover to the distribution channel is planned for the second half of 2011. PVflex develops, produces, and markets flexible photovoltaic modules for building integration. The company focuses on providing reasonable system solutions with direct adhesion of the solar modules on the roof skin without the usual substructure.

The firm has a unique, patented technology for the manufacture of flexible solar modules based on CIGS solar cells. With this procedure it is possible to produce flexible solar modules from CIGS solar cells, otherwise very sensitive to humidity, at a reasonable price. New lamination methods, developed by PVflex, assure the long-term durability of the CIGS solar modules.

Air Products & Taiwan’s Government Unite to Revolutionize CS Industry The agreement will involve collaborating with Taiwanese industries in the semiconductor, solar energy and TFT-LCD manufacturing sectors. Air Products and The Ministry of Economic Affairs in Taiwan have signed a Letter of Intent (LOI), signifying a commitment to identify investment opportunities in Taiwan’s semiconductor, solar energy and TFT-LCD manufacturing industries. This will foster long-term cooperation with Taiwanese companies and research institutes, and work to collaborate with the country’s Industrial Technology Research Institute in the development of gas and semiconductor fluid cleaning technologies. The LOI was signed by Taiwan Deputy Minister Sheng-Chung Lin and Air Products CEO John E. McGlade at the company’s global headquarters in Allentown, Pa. Wilfred Muskens, Deputy Secretary of International Business Development, Pennsylvania Department of Community and Economic Development, participated in the ceremony together with officials from various departments within the Taiwan Ministry of Economic Affairs, as well as representatives from the Taipei Economic and Cultural Office in the U.S. ‘’Air Products has been building relationships in the Asia region for nearly 30 years and we are especially pleased with the growth of Air Products San Fu, our Taiwanese affiliate, which is today the largest industrial gas company in Taiwan,’’ said McGlade, who served as vice president of Air Products San Fu Industrial Gas Division based in Taipei in the late 1980s.



‘’Taiwan is an extremely attractive market for us and we welcome the opportunity to work even more closely with our government, industry and academic partners to enhance Taiwan’s global competitiveness.’’ Deputy Minister Lin, who is leading the Taiwan delegation during visits this week to leading U.S. companies in the gas, energy, biopharmaceutical, telecommunications and information technology industries, expressed his appreciation for the high-quality gases, equipment and chemicals Air Products has supplied to Taiwan’s industries over the years and its contribution to Taiwan’s industrial development. ‘’Taiwan is a world leader in semiconductor, LED and solar cell manufacturing,’’ Lin said. ‘’With this agreement we have signed today, it is our hope that Air Products San Fu will continue to invest in the petrochemical and semiconductor industries, and advance its efforts into the green energy industry as well.’’ Air Products has been operating in Taiwan through its San Fu subsidiary since 1987 and supplies atmospheric and specialty electronics gases, chemicals and related equipment to many industries. The company has approximately 800 employees at 18 locations capable of serving all parts of Taiwan. Air Products San Fu was recently named one of ‘’The Top 300 Companies’’ in Taiwan by The Commonwealth magazine, and is the first gas company in Taiwan awarded ISO9002 and ISO14000 certifications, a measure of the company’s commitment to high standards of quality and environmental responsibility. In addition, Air Products San Fu recently received its second Silver Award in the 2010 Taiwan TrainQali System (TTQS). TTQS is a national training quality evaluation program held by the Bureau of Employment and Vocational Training in Taiwan to recognize corporations with outstanding performance in implementing quality and effective training systems. Air Products serves customers in industrial, energy, technology and healthcare markets worldwide with a unique portfolio of atmospheric gases, process

and specialty gases, performance materials, and equipment and services. Founded in 1940, Air Products has built leading positions in key growth markets such as semiconductor materials, refinery hydrogen, home healthcare services, natural gas liquefaction, and advanced coatings and adhesives. The company is recognized for its innovative culture, operational excellence and commitment to safety and the environment. In fiscal 2010, Air Products had revenues of $9 billion, operations in over 40 countries, and 18,300 employees around the globe.

Cyrium Quantum Dots Brighten SUNRISE Solar Project The Canadian firm’s high performance concentrator photovoltaic (CPV) cells are intended drive the SUNRISE project forward and enable the delivery of higher conversion performance at higher concentrations. Cyrium Technologies, a leading developer of multi-junction concentrator photovoltaic (CPV) cells, is using its quantum dot enhanced solar cells as part of the SUNRISE (Semiconductors Using Nanostructures for Record Increases in Solar-cell Efficiency) project. On October 21, 2010 the National Research Council of Canada announced the unveiling and introduction of the “SUNRISE solar tracker”, installed at the Canadian Centre for Housing Technology site in Ottawa, Ontario. For Cyrium, SUNRISE demonstrates that its advanced patented nanotechnology (quantum dots) can be used to enhance the performance of multi-junction cells in CPV systems and enable the delivery of higher conversion performance at higher concentrations. The SUNRISE project stems from the National Research Council of Canada’s research and development efforts to bring clean power generation technologies to Canadians, and is a research collaboration between the National Research Council of Canada, the University of Ottawa, the



Université de Sherbrooke and industrial partners Cyrium Technologies and Opel International. The project is funded by the National Research Council of Canada, the Natural Sciences and Engineering Research Council of Canada, and the Business Development Bank of Canada and demonstrates the success that can be achieved when industry, government, and academia work together with a common goal. As the engine driving CPV systems, Cyrium’s patented quantum dot enhanced cells (QDEC) were critical to the success and execution of the SUNRISE project. When used in advanced solar modules on dual axis trackers, such as those provided by Opel, Cyrium’s QDEC cells enable the system to achieve some of the highest efficiencies in the CPV industry. “I am very proud of Cyrium’s participation in SUNRISE,” said Harry R. Rozakis, President and CEO of Cyrium Technologies. “Seeing our patented cell technology at the core of the project is exciting not only for Cyrium but also for all of those who see CPV as a viable and cost effective source of solar power. SUNRISE clearly demonstrates how the combination of our unique quantum dot nanotechnology with state of the art solar concentrator and tracker designs can enable cost effective, high efficiency renewable energy generation.” Cyrium is headquartered in Ottawa, Canada and is a fabless developer and supplier of Concentrator Photovoltaic (CPV) cells for the terrestrial solar energy market. Using its breakthrough patented nano-technology, which significantly increases photovoltaic solar cell performance at high concentration, Cyrium has achieved cell efficiencies of greater than 40%. Cyrium’s QDEC (quantum dot enhanced cell) product line is designed to deliver the highest possible conversion efficiencies which in turn enable CPV systems companies to achieve the lowest levelized cost of energy (LCOE).

NREL Scientists Lauded as Renewable Energy Pioneers Three scientists were recently honored at the World Renewable Energy Congress/Network (WREN) in Abu Dhabi, for their work in solar energy. At the recent World Renewable Energy Congress/Network (WREN) in Abu Dhabi, three researchers from the U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) were named WREN Pioneers. Falah Hasoon, Chuck Kutscher and David Renné were recognized for the impact their discoveries and innovations have made to the progress and acceptance of renewable energy technologies. Falah Hasoon is a senior scientist at NREL and a research professor at Colorado School of Mines. For more than 25 years, Hasoon has actively researched material growth and characterization of photovoltaic materials and device processing. He has a master’s degree in physics from the University of Bath and his doctorate in electrical engineering from the University of Salford. He is an author and co-author of more than 120 scientific research publications and is a co-inventor of four U.S. patents. Hasoon’s knowledge covers a wide range of material growth techniques such as the vertical Bridgeman method, the iodine vapor transport technique, the solution growth method, Physical Vapor Deposition (PVD), and closed space sublimation. His interests include design and fabrication of growth and characterization research tools. His current primary research interest is the growth and characterization of Cadmium telluride thin-film based photovoltaic materials and devices. Chuck Kutscher is a principal engineer and manager of the Thermal Systems Group at NREL where he currently leads research on parabolic trough solar collector systems and the development of a design handbook on solar industrial process heat systems. He is a past chair of the American Solar Energy Society (ASES) and was a general chair of the SOLAR 2006 national solar energy conference, which led to the ASES report, Tackling Climate Change in the U.S. He is an



adjunct professor at the University of Colorado at Boulder, where he developed and taught the course “Climate Change Solutions.” He also writes a monthly column addressing climate change for SOLAR TODAY magazine. He has given many presentations around the U.S. on renewable energy and climate change and was the keynote speaker for the first “Colorado’s New Energy Economy” Conference in October 2007, and received the 2008 Governor’s Excellence in Renewable Energy Individual Award. David Renné has been at NREL since 1991 developing and managing programs on renewable energy resource assessment and analysis, and the integration of resource data into geographic information systems (GIS). His expertise is in solar resource assessments and he is currently the operating agent of an International Energy Agency Solar Heating and Cooling Program Task titled “Solar Resource Knowledge Management.” He also manages DOE’s Solar Resource Assessment activities funded under the Solar Energy Technology Program. Much of his recent work at NREL has been for international organizations such as the U.S. Agency for International Development and the United Nations Environment Program. Renné is currently the president of the International Solar Energy Society (ISES). Before coming to NREL, he was a senior program manager at Pacific Northwest National Laboratory, where he was heavily involved in both domestic and international wind studies, such as the U. S. Candidate Site Wind Measurement Program, and a wind resource assessment study for Egypt. Renné received his master’s and doctorate at Colorado State University in Atmospheric Sciences and Earth Resources. Established in 1992, WREN supports the utilization and implementation of renewable energy sources that are both environmentally safe and economically sustainable through a worldwide network of agencies, laboratories, companies and individuals—all working together towards the international diffusion of renewable energy technologies and applications. NREL is DOE’s primary national laboratory for renewable energy and energy efficiency research

and development.

Ascent Solar To Help Further Develop Solar Energy in India The firm will collaborate with The Energy and Resource Institute (TERI) of New Delhi to further develop its solar modules for rural electrification. Ascent Solar Technologies, a developer of flexible thin-film solar modules, has entered into a memorandum of understanding (MOU) with The Energy and Resource Institute (TERI) of New Delhi, India. Under the terms of the MOU, TERI will perform testing and performance evaluation of Ascent Solar high efficiency flexible thin-film CIGS modules and study the feasibility of including Ascent’s modules for TERI’s flagship program “Lighting a Billion Lives” (LaBL) and other projects currently under development at TERI. Upon successful completion of evaluation of both technical and economical feasibility, TERI and Ascent Solar will mutually discuss and decide on the terms and conditions for the use of Ascent Solar’s modules for the LaBL program and or other projects. TERI and Ascent Solar will also decide on the implementation model to follow once the evaluation phase is complete. Akanksha Chaurey, Director Decentralised Electricity Solutions and Lighting a Billion Lives Campaign TERI, said, “Ascent Solar has been one of the forerunners in the development of futuristic technologies in the field of solar photo-voltaic energy. Our collaboration with Ascent Solar will help engage the much needed newer, cutting edge solar photo-voltaic technologies into our ongoing electrification projects for rural applications including solar lighting through our flagship programme Lighting a Billion Lives.” Ashutosh Misra, SVP of Corporate Development for Ascent Solar, stated, “India is one of the largest off-grid electricity markets in the world and the need for innovative and cost competitive off-grid electricity generation in urban and rural markets in India presents a tremendous opportunity for Ascent Solar. TERI is a premier organization focusing on developing a range of technologies that have created new paradigms of development underlining



the sustainable use of natural resources, and are proven for their effectiveness and economic viability. Our joint collaboration to develop various solar energy solutions for TERI’s rural electrification projects including its flagship ‘Lighting a Billion Lives’ based on solar technology provides us with a unique opportunity to grow our market share in India. Our unique, light-weight, ruggedized, high power density thin-film CIGS modules enable ease of installation, handling and transport that are an ideal solution for LaBL and other programs like it.” A dynamic and flexible organization, TERI was established in 1974. While in the initial period the focus was mainly on documentation and information dissemination activities, research activities in the fields of energy, environment and sustainable development were initiated towards the end of 1982. The genesis of these activities lay in TERI’s firm belief that efficient utilization of energy, sustainable use of natural resources, large–scale adoption of renewable energy technologies and reduction of all forms of waste would move the process of development towards the goal of sustainability. All activities in TERI move from formulating local and national level strategies to suggesting global solutions to critical energy and environment-related issues. It is with this purpose that TERI has established regional centres in Bangalore, Goa, and Guwahati, and a presence in Japan, Malaysia, Russia, and the United Arab Emirates. It has also set up affiliate institutes: TERI–NA (The Energy and Resources Institute, North America) Washington DC, USA, and TERI–Europe in London, UK. Ascent Solar is a developer of thin-film photovoltaic modules with substrate materials that can be more flexible and affordable than most traditional solar panels. Its modules can be directly integrated into standard building materials, commercial transportation, automotive solutions, space applications, consumer electronics for portable power or configured as stand-alone modules for large scale terrestrial deployment. Ascent Solar is headquartered in Thornton, Colorado, U.S.A.

XsunX’s CIGSolar Device Achieves 15.09% Conversion Efficiency The firm says it has taken a different path to the rest of the CIGS industry by focusing on replacing the multi-billion dollar supply chain of silicon photovoltaic (PV) technologies with its CIGSolar modules. XsunX, a developer of advanced, thin-film photovoltaic (TFPV) solar cell technologies and manufacturing processes, has achievedCIGS conversion efficiency of 15.09%. Only aweek ago XsunX reported successfully fabricating cell devices based upon the Company’s CIGSolar technology that surpassed 14 % conversion efficiency. The firm says that achieving these high efficiencies in the relatively short period of time since the addition of thermal co-evaporation to its CIGS process underscores its assertion that small-area, co-evaporation production provides the best platform to deliver the highest efficiency CIGS based solar cells necessary to compete with, and potentially replace, silicon photovoltaic (PV) technologies. XsunX is very excited with these results and its next goal is to deliver a better manufacturing solution and use for CIGS. The firm says it has taken a different path to the rest of the CIGS industry by focusing on identifying a large opportunity: the replacement of silicon within an existing multi-billion dollar supply chain. The firm says it is not focused on trying to do the same thing better than the competition in the CIGS thin-film arena as it does not believe that there are significant gains to be achieved for the use of CIGS by simply spending more time trying to improve the limitations to current thin-film manufacturing techniques, or product design. The firm stresses it does not believe all other CIGS solutions will fail, and that virtually all markets have numerous suppliers competing on different levels or within different segments of a market. The



electronics industry, transportation, cars, and now solar provide examples of market segmentation. XsunX’s CIGSolar technology is working to address a very specific and large segment of the solar market by replacing silicon with lower cost high efficiency CIGSolar cells. Deposition of the CIGS cell layer is conducted on full size 125 mm square substrates. Test configurations used to measure efficiency results are identical to that used by the National Renewable Energy Laboratory, and its AM1.5 solar simulator used for testing is calibrated daily using a reference solar cell calibrated by National Institute of Standards and Technology (NIST).

SolFocus and Vision to Build the Largest CPV Solar Power Plant in Saudi Arabia The project is a milestone for the commercialization of concentrator photovoltaic (CPV) technology in the Middle East and will deliver 300MWh. SolFocus, a leading developer of Concentrator Photovoltaic (CPV) solar systems, has announced that Vision Electro Mechanical Company will build the first commercial solar power plant in Saudi Arabia using CPV systems. These SolFocus CPV systems combine high-efficiency solar cells with advanced optics to provide scalable, reliable solutions capable of delivering low-cost renewable power. The project, located in the Bahra region, will deliver around 300MWh of clean energy per year and is the first in a series of Saudi power stations planned by Vision.

“The high sun conditions of the Middle East provide an ideal environment for reaping large-scale, low-cost solar energy from CPV systems,”

said Mark Crowley, CEO, SolFocus. “Together with our partners at Vision, SolFocus will bring the world’s most efficient and resource-friendly solar technology to Saudi Arabia, providing energy diversification for the country.” Vision will market and install the SolFocus solar power systems, starting with this plant in CPC’s Bahra industrial complex. Vision will install other solar power stations in Saudi Arabia, as well as in the research centers of King Abdullah University of Science and Technology (KAUST). “We accomplished this partnership in line with Saudi’s efforts to promote investment in renewable energy projects and serve power projects in the Gulf and the wider Arabian region,” said Hassan Chahine, general manager, Vision. “This is a breakthrough in Saudi Arabia’s thrust for energy diversification. We believe the Bahra plant will serve as a model for the further research and study of clean water and power solutions that diversify the region’s energy mix.” “It is a testament to SolFocus that its technology was selected by project developers with such deep expertise in energy generation innovation,” added Crowley. “We view SolFocus CPV as a critical component of the bold clean energy goals set forth by leaders in the Middle East, such as CPC/Vision in Saudi Arabia and the developers of Masdar City in Abu Dhabi.” The news is the latest in a string of groundbreaking developments for SolFocus; earlier this month it was the first CPV company to announce a power warranty backed by Munich Re; in May it announced completion of the largest CPV installation in North America; and in 2009 it was the first CPV firm to secure International Electrotechnical Commission (IEC) certification for performance and safety. SolFocus aims to enable solar energy generation at a Levelized Cost of Energy (LCOE) competitive with traditional fossil fuel sources. To achieve this goal, the firm has developed leading concentrator photovoltaic (CPV) technology which combines high-efficiency solar cells (approaching 40 %) and advanced optics to provide solar energy solutions which are scalable, dependable and capable of delivering on the promise of clean, low-cost, renewable energy.



SolFocus is headquartered in Mountain View, California with European operations headquartered in Madrid, Spain, and manufacturing in Mesa, Arizona and manufacturing partners in China. Established in 2007 in Bahra, Saudi Arabia, Advanced Vision is a major electro mechanical contracting company serving the construction industry. It was established to meet increased market demand for large electro mechanical projects that require complete engineering and construction services. A subsidiary of Saudi-based Construction Products Holding Company (CPC), It has formed a solar company to develop, manufacture and operate solar power plants in Saudi Arabia. Construction Products Holding Company (CPC) is a dynamic and reputable entity possessing a wealth of global experience in construction products. CPC was established in 2005 as the industrial arm in the field of building materials manufacturing for Saudi Binladin Group (SBG), implementing the “one stop shop” concept for providing construction materials to contractors and developers.

Germanium Market to Exceed 126.4 Thousand Kilograms by 2015 GIA announces the release of a comprehensive global report on Germanium markets. The global market for Germanium is forecast to exceed 126.4 thousand kilograms by the year 2015.

The expected growth in world economy and increased use of germanium across various end-use sectors is likely to fuel the expansion of the market.

The economic recession across global markets during the years 2008 and 2009 derailed various end-use applications of germanium and dented the prospects of the market. However, with the recovery of global economic situation in 2010 and improving end-use market scenario, germanium market is poised to gain momentum and register healthy growth over the coming years. Global germanium market is extremely dynamic and volatile.

Germanium supply is primarily dependant on zinc mining, while the demand for the mineral closely varies with changes in the end-use industries. For instance, significant drop in fiber optic systems and electronics/solar applications during 2008 and 2009 resulted in noticeable fall in overall germanium demand.

The United States represents the largest regional market for Germanium worldwide, as stated by the new market research report on Germanium. The financial crisis considerably weakened the demand for germanium in the US during the crisis period of 2008 & 2009. Going forward, germanium demand in the US is expected to witness moderate recovery through 2010 and gain momentum from 2011 onwards. Fiber Optic Systems represent the major end-use segment for germanium in the US. Europe represents the second largest market for germanium worldwide. In terms of growth, Asia-Pacific is portended to register fastest growth through 2015. Fiber Optic Systems category constitutes the largest end-use segment of germanium market. Infrared Optics and Polymerization Catalysts represents the other major end-use segments of germanium.

Germanium, due to its inherent properties, is widely employed as a catalyst and substitute for several metals. New findings state that germanium, as a substitute for gallium arsenide (GaAs), can be used in optoelectronic devices including advanced Light Emitting Diodes (LEDs). Series of chips made from SiGe has led to the development of many multi function devices such as PDAs and data enabled mobile phones. Germanium substrates are cheaper and available at just half the price of 4-inch GaAs wafers. This is significant in the market, where price pressures are more intensive, though it translates to a few percent in an end product including LED. The availability of 6” and 8” germanium wafers in future will enable products availability at much lesser price.

Major players profiled in the report include Germanium Corporation of America, GFI Advanced Technologies Inc., Japan Algae Co. Ltd., N.V Umicore SA, Novotech Inc., Recylex S.A., Teck Cominco Limited, Umicore Optical Materials USA Inc., Umicore Optics, and Yunnan Chihong Zinc-Germanium Co. Ltd.

The research report titled “Germanium: A Global Strategic Business Report” announced by Global



Industry Analysts Inc., provides a comprehensive review of the germanium markets, impact of recession on the markets, current market trends, key growth drivers, product overview, raw material scenario, end-use industry analysis, recent product introductions, recent industry activity, and profiles of major/niche global as well as regional market participants. The report provides annual sales estimates and projections for germanium for the following geographic markets - US, Canada, Japan, Europe, Asia-Pacific, Latin America and Rest of World. Key end-use segments analyzed include Fiber Optic Systems, Polymerization Catalysts, Infrared Optics, Electronics/Solar Applications, and Other Uses. Also, a seven-year (2000-2006) historic analysis is provided for additional perspective.

For more details www.strategyr.com/Germanium_Market_Report.asp

Solopower Receives IEC Certification for CIGS Modules The latest certification means the California based firm can provide its flexible CIGS modules to Europe aswell as North America. SoloPower, a California-based manufacturer of flexible, thin film solar cells and modules has become the first solar company to obtain certification to both IEC (61646 and 61730) standards and UL 1703 standards for flexible, thin film CIGS modules. This pace setting accomplishment enables SoloPower to sell flexible, lightweight CIGS modules in Europe in addition to North America. “Achieving these certifications clearly puts us in a position to offer our global customers a better solution to many of the challenges they are facing,” stated SoloPower CEO Tim Harris. “We are now on a path to developing global market channels for this powerful, lightweight, low-cost product offering.” Mustafa Pinarbasi, SoloPower CTO, added, “Certification of our flexible modules against IEC and UL standards is a direct result of outstanding

efforts by our team, demonstrating significant advances in our technology and products.” SoloPower’s flexible CIGS module achieved IEC 61646 and IEC 61730 certifications through TÜV SÜD America. Prior to that, SoloPower’s flexible module received ETL Mark certification to the UL 1703 standard by Intertek. These certification standards test product durability, safety, reliability, and performance. SoloPower claims its modules offer an unmatched combination of power and cost effectiveness, packaged in a durable, lightweight, flexible form. The company has obtained certification under IEC and UL standards for its initial module format, the SFX1 module (70Wp and 75Wp, 0.3m x 2.9m, 2.3kg / 5lbs.). SoloPower’s SFX1-i3 module (up to 260Wp, 0.88m x 3m, 6.8kg/15lbs.) is currently completing certification testing. SoloPower, headquartered in Silicon Valley California, produces low-cost, high-power, flexible thin-film photovoltaic modules that offer a viable alternative to electricity produced using traditional fossil fuels. SoloPower’s modules employ its solar cell devices fabricated with copper indium gallium di-selenide (CIGS) materials using a proprietary roll-to-roll electrodeposition process. TÜV SÜD America, a subsidiary of TÜV SÜD AG, is a business-to-business engineering services firm providing international safety testing and certification services. Founded in 1987, TÜV SÜD America has grown to more than 600 experts in over a dozen locations throughout the U.S., Canada and Mexico. Intertek is a leading provider of quality and safety solutions serving a wide range of industries around the world. From auditing and inspection, to testing, quality assurance and certification, Intertek has a network of more than 1,000 laboratories and offices and over 26,000 people in more than 100 countries around the world.



Solar Frontier to Supply 3.3 MW of CIS Modules to Thailand’s Gunkul Powergen Based in Northern Thailand, the plant will provide electricity using 38,500 panels with completion scheduled for the end of 2010.

Japanese firm Solar Frontier will supply Gunkul Powergen with 3.3MW of CIS solar modules in a power plant project coordinated by Marubeni in Phetchabun Province, Thailand.

“This solar power plant is the first of a number of solar facilities Gunkul Powergen is planning in Thailand. The selection of Solar Frontier to supply all the panels for the first stage of this project reflects our confidence in the superior performance of its CIS modules,” said Gunkul Engineering CEO, Gunkul Dhumrongpiyawut.

“Solar Frontier is proud to have won this significant role in the Kingdom of Thailand’s commitment to renewable energy solutions,” said Solar Frontier CEO, Shigeaki Kameda. “Thailand has year-round sunshine, which represents great potential for solar energy solutions, but also challenges in terms of heat and humidity that Solar Frontier proves well suited to meet. This agreement is part of the momentum we are building in Thailand and throughout Asia.”

While Thailand introduced a feed-in-tariff and other programs in 2007 with the original aim to install 500

MW of solar energy systems by 2020, this goal is now predicted to be exceeded as early as 2012.

Based in Phetchabun Province, Northern Thailand, the 3.3 MW plant will provide electricity to the Provincial Electricity Authority of Thailand. With 38,500 panels, the completion is scheduled for the end of 2010.

Solar Frontier K.K., a 100% subsidiary of Showa Shell Sekiyu K.K., is committed to creating the most economical, ecological solar energy solutions in the world, on the world’s largest scale. Solar Frontier’s proprietary CIS technology, denoting key ingredients Copper, Indium, and Selenium, is claimed to have the best overall potential to set the world’s most enduring standard for solar energy.

Solar Frontier and IBM to Develop CZTS Solar Cell Technology The Japanese innovator in thin film solar technology based on the Copper, Indium, Selenium, Gallium, and Sulfur (“CIS”), together with IBM will create a cost competitive solar technology that is inexpensive and uses earth-abundant materials. Solar Frontier has signed an agreement to jointly develop thin film solar cell technology with IBM based on the elements copper, zinc, tin, sulfur, and selenium (“CZTS”). IBM and Solar Frontier will collaborate to expand upon IBM’s innovations in this area. In February 2010, IBM announced record results of 9.6% efficient solar cells using CZTS material, a 40% efficiency increase over previous CZTS solar cells. This joint development will couple IBM’s groundbreaking research with Solar Frontier’s thin film development and manufacturing capabilities to create a cost competitive solar technology that is inexpensive and uses earth-abundant materials. Like Solar Frontier, DelSolar has also recently partnered with IBM in developing this technology. Solar Frontier, a subsidiary of Showa Shell Sekiyu K.K., is an industry leader in CIS thin film solar cell technology. It currently has two manufacturing



facilities with a third facility that will become operational in 2011. At 900 MW, the third plant will become the world’s largest photovoltaic production facility. This will bring Solar Frontier’s total photovoltaic device manufacturing output to 1 gigawatt (GW) of production; expected to be the largest CIS photovoltaic capacity in the world. “Solar Frontier’s extensive experience in the research and development of CIS thin film photovoltaic technologies has delivered numerous conversion efficiency breakthroughs that have resulted in world class records,” said Satoru Kuriyagawa, Solar Frontier’s Chief Technology Officer. “We are interested in exploring CZTS for its evolutionary compatibility with our CIS thin film technology. The goals of the project correspond with Solar Frontier’s mission to combine both economical and ecological solar energy solutions.” “Solar Frontier is one of the world’s leading experts in CIS-based thin film solar panels and we look forward to working with them.” said T.C. Chen, VP of Science and Technology IBM Research. “Adding Solar Frontier’s deep expertise in thin-film-based solar device technology to this project will strengthen the collaborative effort we began in this area with Tokyo Ohka Kogyo Co.,Ltd., for developing chemistry and tooling expertise; and more recently adding DelSolar’s solar module and manufacturing expertise. This team will significantly increase our ability to create CZTS photovoltaic technology that achieves sustainable grid parity.” CZTS-based technology utilizes materials that avoid heavy metals and are readily available at a lower cost. By virtue of these materials, the goal of this project is to create next generation solar technology that lowers the cost of producing electricity, enabling solar energy to become a ubiquitous alternative to carbon-based energy sources. The research for this joint development program will mainly take place at IBM’s Thomas J. Watson Research Center in Yorktown Heights, New York. Solar Frontier is a subsidiary of Showa Shell Sekiyu K.K. and is committed to creating the most economical, ecological solar energy solutions in the world, on the world’s largest scale. Solar Frontier’s proprietary CIS technology, is claimed to have the best overall potential to set the world’s most

enduring standard for solar energy. This is based on the firm’s legacy of work in solar technology since the 1970s, the priority focus our laboratories have given to CIS since 1993, and its success in large scale CIS commercialization since 2007. The critical factors that combine to make CIS the overall economical and ecological leader include high efficiency and low production costs as well as superior reliability, stability, sustainability, non-toxicity, and lower overall energy consumption in the manufacturing process to yield a faster energy payback time.

XsunX’s CIGSolar Device Raises the Bar with 14% Efficiency The firm’s solar cell module conversion demonstrates the incorporation of gallium near the junction in the cell structure is necessary for producing high efficiencies. XsunX, a developer of advanced, thin-film photovoltaic (TFPV) solar cell technologies and manufacturing processes, has successfully fabricated cells based upon the Company’s CIGSolar technology that surpass 14 % conversion efficiency. This achievement supports the Company’s assertion that small-area, co-evaporation production provides the best platform to deliver the highest efficiency CIGS based solar cells necessary to compete with and potentially replace silicon photovoltaic (PV) technologies. “In only a few short months since adding our new co-evaporation capability and control approach to our CIGS process development, we’ve achieved efficiencies of over 14 percent,” said Chief Technology Officer, XsunX, Robert G. Wendt. “This efficiency level and the efficiency distribution is a significant achievement. In addition to achieving high efficiency levels, we demonstrated excellent cell voltage in the range of 620 to 660 millivolt (mV) clearly demonstrating the incorporation of gallium near the junction in the cell structure which is necessary for producing high efficiencies. We



are working hard to further improve on this rapid success so that we can deliver the best possible CIGS technology to the market.” Deposition of the CIGS cell layers was conducted on full size 125 mm square substrates. Test configurations used to measure efficiency are identical to that used by the National Renewable Energy Laboratory and XsunX test equipment is calibrated to the National Institute of Standards and Technology (NIST) standards. XsunX is pioneering a new manufacturing process to produce low cost, high efficiency thin-film CIGS solar cells through the combination of thin-film photovoltaic (TFPV) process knowledge with select magnetic media thin-film manufacturing technologies pioneered in the hard disc drive industries. The company believes that leveraging small area and high rate production methods will reduce the processing defects plaguing large-scale production processes currently implemented in the marketplace. XsunX specializes in the development and commercialization of advanced, thin-film photovoltaic (TFPV) solar cell technologies and manufacturing processes. It is currently working to develop new proprietary manufacturing systems to deliver low cost solar products based on the use of CIGS (Copper Indium Gallium diSelenide) solar thin-films. Utilizing cross-industry enabling technologies, these systems are being developed to deliver low cost and high yield front end CIGS solar cell manufacturing methods coupled with customized backend solar module assembly and packaging systems. This CIGS production technology is being designed as a turn-key solution to either enable upgrades to existing infrastructure or to establish new large scale solar manufacturing capacity for the production of CIGS solar cells that can be utilized in a multitude of applications. The firm plans to offer joint venture manufacturing opportunities for this technology to regional partners in a number of industry types and solar applications.

MicroLink Devices orders Aixtron MOCVD System for Solar Cell Production The AIX 2800G4-R system will be used for low cost solar cell production. Aixtron has a new order for an MOCVD reactor from MicroLink Devices, a U.S. company engaged in the manufacture of HBT devices and the development of III-V solar cells. The Niles, Illinois-based company placed the order for one AIX 2800G4-R MOCVD system in a 8x6-inch wafer configuration. Following delivery in the second quarter of 2011, it will be used for the production of solar cells and HBTs. The new reactor will be commissioned by the local Aixtron support team working with MicroLink Devices’ engineers in their state-of-the-art fab. Noren Pan, President of MicroLink Devices, comments, “Since our founding in 2000, our MOCVD III-V semiconductor materials technology has enabled us to manufacture world-class, high-performance microwave transistors. We have recently developed a novel, high-efficiency, proprietary GaAs epitaxial lift-off (ELO) manufacturing process that will significantly lower the cost of solar cells.” “As with the company itself, our technologies have grown with Aixtron equipment, so it was a straightforward decision to select a suitable production deposition system to bring our new products to market. With our existing capabilities now fully stretched we need to greatly increase our production capacity. The AIX 2800G4-R MOCVD system is the perfect answer and will bring us high throughput and manufacturing uniformity, while keeping a low cost-of-ownership,” he concludes. MicroLink Devices is a manufacturer of custom-designed semiconductor structures, which are used in microwave and optical communication products. Since 2000, the epitaxial wafers produced by MicroLink have been an essential input to the high speed communication industry. The company has



also collaborated on research and development projects, the results of which have become widely-used commercial products.

ESP Forecasts Solar Electricity Providing 150,000 Jobs in the UK The Electronics, Sensors and Photonics Knowledge Transfer Network (ESP KTN) says that the UK has the potential to install 4GW of peak generating capacity a year by 2016. This would give excellent export opportunities in a market that is growing at 40% per year. The BBC Radio 4 series ‘A history of the world in 100 objects’ identified a solar electricity solution as a transforming object. At the same time, a major opportunity for Solar Electricity to create wealth, jobs and significantly lower the UK’s Carbon Footprint was confirmed at a workshop organized by the ESP KTN and the Photonics Leadership Group (PLG) last month. ESP KTN supports the Electronics, Sensors, and Photonics sectors and includes many advanced technologies such as embedded systems, displays, lighting, instrumentation, and control systems. ESP KTN groups all these underpinning technologies together and more, to make a single entity focused on knowledge sharing for growth. PLG is a body of senior representatives from industry, government and academia that brings together all aspects of the industry in order to promote the application of the science in business. Organizations who contributed to the consortium include IQE and the UK PV Consortium. Solar Electricity, also known as Photovoltaics, has been the subject of research for decades but only recently has the science come together with the business opportunity created by the newly available Feed In Tariff (FiT) in the UK. The meeting of experts in the field concluded that the UK was in an excellent position to benefit from this convergence since the country already has significant activity but with most of the production currently being exported.

The UK has major production of solar panels themselves, raw materials for the solar cells, films and coatings that are used in the industry as well as an even more fundamental part – the special glass itself. Almost all of this is exported to other countries that have an established FiT. As the world increasingly starts to use Solar Electricity there is already a world shortage of capacity and this creates a real opportunity for the UK to invest and prosper in an activity that fits the UK profile well – high technology with a strong local use and with a global market available. Overall there are in excess of 60 companies in the UK in all layers of this industry Major business opportunities exist in the whole supply chain from materials, to panel assembly, to installation. One particular need is for very reliable Inverters (the box of electronics that converts the DC electricity from the solar panels to 240 volts AC for the Grid). These need to match the expected 20 to 30 year lifetime of the solar cells and are in any case one of the key parts of the whole system. The variable nature of UK weather places considerable demands on systems that have been designed for slowly changing solar loads. By analogy with the situation in Germany, where the FiT was put in place 7 years ago, the meeting concluded that the UK could create a total supply chain that would be able to install 4Gigawatts (GW) of peak generating capacity a year by 2016 and would employ 150,000 people at that time. In addition, building up that capability would give excellent export opportunities in a market that is growing at 40% per year. To put that amount of generation in context: 4GW per year over 20 years would give 80GW (peak output) of installed capacity which could provide 20% of the total electricity needed in the country. This meets the target set by the Government for renewables at that time and represents a reduction in annual CO2 of 13 million Tons. It was also confirmed that the levels of solar energy at the average latitude of the UK were sufficient to meet these targets. The main challenge was in fact not seen to be related to the science or engineering



but to the build-up of the level of activity required both in terms of reaching an adequate volume of manufacturing and of finding and training a large enough workforce. The final report from the workshop, with its recommendations, will be published early in November. Photonics is emerging as a major new business activity with huge markets not only for solar energy but also Ultra-Efficient Lighting (such as LED solid state lights), displays, cameras and fibre-optics as well as laser fabrication and medical processes. The UK is very well placed in these technologies but typically lacks scale in the downstream production segment of the supply chain. However Solar Energy could change this dramatically since it is not efficient to transport such large amounts of materials long distances and many of the installation jobs will be local.

First Solar to Open Manufacturing Facilities in Vietnam & U.S. The plants will boost the company’s annual manufacturing capacity by nearly 500 MW with each new plant creating approximately 600 green jobs. First Solar is planning to build two new four-line manufacturing plants that will boost the company’s annual manufacturing capacity by nearly 500 MW to help meet strong demand for its advanced thin-film photovoltaic modules. The plants are expected to be built in the United States and Vietnam and completed in 2012. Each new plant will create approximately 600 green jobs and will be designed to accommodate additional production capacity. Negotiations and site assessments are ongoing in both countries and will be finalized and announced at a later date. The new factories will further extend First Solar’s previously announced capacity additions, including eight lines at its Kulim, Malaysia facility, four lines in Frankfurt an der Oder, Germany, and two lines in

Blanquefort, France. Earlier this year the company also completed an expansion of its Perrysburg, Ohio, manufacturing plant, which serves as First Solar’s primary hub for engineering, research and development, and employs more than 1,100 of First Solar’s 1,500+ U.S.-based associates. The new plants combined with previously announced expansions, will nearly double production capacity from 1.4 GW in 2010 to more than 2.7 GW in 2012. “These expansions provide proximity to growing U.S. demand while supporting our roadmap to drive down the cost of clean, sustainable solar electricity,” said First Solar CEO Rob Gillette. “Effective government policies provide long-term visibility and enable sustainable markets.” In addition to the increase in manufacturing employment, First Solar expects to generate over 1,000 construction jobs through the installation of solar power plants from the company’s 2.2 GW North American project pipeline. First Solar manufactures solar modules with an advanced semiconductor technology and provides comprehensive photovoltaic (PV) system solutions. The company is delivering an economically viable alternative to fossil-fuel generation today. From raw material sourcing through end-of-life collection and recycling, First Solar is focused on creating cost-effective, renewable energy solutions that protect and enhance the environment.

Umicore Opens “World’s Most Advanced” Germanium Wafer Production Facility The facility is the only germanium (Ge) wafer manufacturer with high volume Ge wafer production facilities on two continents, North America and Europe. The advanced germanium wafer production facility was officially opened on Tuesday October 12th with almost 100 guests attending the Grand Opening event at Umicore’s Quapaw site (OK, USA), including Umicore’s CEO Marc Grynberg and Oklahoma’s Secretary of Commerce Natalie Shirley.



Two years after the ground-breaking ceremony in October 2008, installation work and testing were successfully completed. The new facility makes materials technology group Umicore the only germanium (Ge) wafer manufacturer with high volume Ge wafer production facilities on two continents, North America and Europe, enabling the group to respond flexibly to the demand for top quality Ge wafers in a growing market. The company invested several tens of millions of US dollars in the 40,000 square foot facility, creating new high technology jobs in the area. Carl Quaeyhaegens, General Manager at Umicore’s Substrates Business Line, stated, “ Global demand for Ge wafers is set to rise significantly in the years to come. This is why we pursue an ambitious production expansion plan. With our production facilities in the United States and Belgium, we are now in an ideal position in terms of quantity and quality to meet rising demand. In addition, Quapaw will enable us to strengthen our global lead in 6 inch Ge wafers”. Germanium wafers are a core component of triple junction (III-V) high-efficiency solar cells used on the vast majority of all satellites launched today. Triple junction (III-V) solar cells based on germanium wafers are also widely used in terrestrial Concentrated PV systems (CPV), an emerging, highly promising, and cost-efficient PV technology, for areas with high direct sunlight irradiation levels. (DNI). Umicore is a materials technology group. It focuses on application areas where it knows its expertise in materials science, chemistry and metallurgy can make a real difference. Umicore generates approximately 50% of its revenues and spends approximately 80% of its R&D budget in the area of clean technology, such as emission control catalysts, materials for rechargeable batteries and photovoltaics, fuel cells, and precious metals recycling. Umicore’s overriding goal of sustainable value creation is based on this ambition to develop, produce and recycle materials in a way that fulfils its mission: materials for a better life. The Umicore Group has industrial operations on all continents and serves a global customer base; it generated a turnover of € 6.9 billion (€ 1.7 billion

excluding metal) in 2009 and currently employs some 14,300 people.

Solyndra Reveals the Fastest and Easiest-to-Install Rooftop Solar System The firm’s 200 Series offers low cost, tool-free installation is the ideal solar solution for large commercial rooftops. Solyndra, an American manufacturer of cylindrical photovoltaic (PV) systems for large commercial rooftops, has unveiled the Solyndra 200 Series. The new product builds on technology proven on more than 500 rooftops around the world to offer fast, simple installation, a low distributed load and low overall installed cost.

“The 200 Series is the ideal solar solution for the large commercial rooftop,” stated Brian Harrison, Solyndra’s president and CEO. “For customers, the simple connection system allows the panels and mounts to snap-together easily and significantly reduces balance-of-system costs. Because the 200 Series requires no tools for installation, it is the fastest and easiest-to-install flat rooftop solar system available. The 200 Series also demonstrates the strength of our product roadmap and ability to continue to increase panel power while lowering the cost of electricity and improving the return on investment for our customers.”



Building owners with older or “value engineered” rooftops benefit from the lightweight panels (roof load of 2.8 lbs/ft2) that have no need for penetrations or ballasting, and can be installed significantly faster than flat panels on a typical roof. This minimizes business disruption during installation and dramatically reduces labor costs; the shorter project duration is also a benefit for installers who can complete more projects during critical seasons. The use of 80% fewer parts per kW than previous systems and the elimination of array grounding further lowers the balance of system costs. One of the first 200 Series installations in the United States was performed by Panelized Solar, a Gold Solyndra Solutions Provider. “We knew the tool-free design would be fast, but we were still surprised by how fast and easy the 200 Series was to install,” said Keith Coonce, President of Panelized Solar. “Our installation team was able to finish the 238 kWp installation of more than 1100 panels in just three days.” The 200 Series systems come complete with all mounting hardware included. Optimized light collection and enhancements to the Solyndra module improve the 200 Series panels’ ability to capture direct, diffuse and reflected sunlight across the 360-degree photovoltaic module surface. This makes the 200 Series Solyndra’s most powerful panel, a design augmented further if combined with a reflective, “cool roof.” The wider spacing of the modules and Solyndra design offers “broader shoulders” or more uniform energy collection throughout the day than traditional flat panels.

The cylindrical module shape also allows Solyndra panels to be placed horizontally and significantly closer together than conventional panels. Panels can be oriented in virtually any direction which offers greater flexibility for rooftop applications. The design of Solyndra systems also provides superior wind, soiling and snow performance. By allowing the wind to flow through the modules, Solyndra 200 Series panels require no penetrating mounts in winds up to 130 mph. The 200 Series design and improved manufacturing processes make the new product’s installed pricing highly competitive with traditional flat panels. Solyndra designs and manufactures PV systems, comprised of panels and mounts, for the commercial rooftop market. Using proprietary cylindrical modules and thin-film technology, Solyndra systems achieve the lowest system installation costs on a per watt basis for the commercial rooftop market. Headquartered in Fremont, CA, Solyndra manufactures its solar panels in a highly-automated plant where it performs all operations required to process materials into the final product.

CVD Equipment Corporation Boosted by $3.4M Order for Solar Production Tools The money will be used to provide deposition production tools in the manufacture of solar modules. CVD Equipment Corporation has announced that it has received an initial order for $3.4 million from a solar panel manufacturer to provide deposition production tools for their solar factory. CVD continues to benefit from the increased demand for products that generate or save energy and we anticipate that this trend will continue to create demand for our products and services for many years to come. CVD’s endeavors into Graphene materials and equipment was also given a boost this past week when two physicists working at the University of Manchester were awarded the Nobel Prize in Physics for the discovery and isolation of Graphene.



Graphene, a one-atom thick material, is not only the thinnest material in the world, it may also be the strongest substance ever discovered (stronger than steel). Graphene has the potential to transform electronics by allowing for faster computers and folding touch screens, lighter and stronger aircraft and cars and a host of other applications. The large demand for energy savings, energy generation materials and products needed to address rising energy and environmental costs creates a growing demand for manufacturing solutions using nanotechnology and thin film coatings on glass, wafers and other substrates or materials. Using its Application Laboratory, CVD strives to perfect and expand the multiple areas where its process solutions can be applied. The solar, energy and nanotechnology markets offer significant growth opportunities for CVD’s technologies because they deliver favorable performance and cost benefits. These fields will benefit further from a renewed drive for energy savings and ecologically safe energy generation. CVD Equipment Corporation a designer and manufacturer of standard and custom state-of-the-art equipment used in the development, design and manufacture of advanced electronic components, materials and coatings for research and industrial applications. CVD offers a broad range of chemical vapor deposition, gas control, and other equipment that is used by customers to research, design and manufacture semiconductors, solar cells, carbon nanotubes, nanowires, LEDs, MEMS, industrial coatings and equipment for surface mounting of components onto printed circuit boards.

GT Solar Opens New Asia Headquarters in Hong Kong The company has also announced upgrades to its line of DSS ingot growth furnaces. GT Solar International, a global provider of materials for the solar, LED and other specialty markets has announced that it has opened its new

Asia operations headquarters in Hong Kong. The Hong Kong headquarters better serves the needs of its customers throughout the Asia Pacific region. “Over eighty-five percent of our business now comes from Asia, particularly from China where most of our customers are located,” said Tom Gutierrez, president and CEO of GT Solar. “Our Asia headquarters is the next logical step in developing the most appropriate business model to support our growing customer base in the region. By focusing the operations of our business in Hong Kong, we will be more responsive to our local customers and continue to provide the high quality products and high levels of support they have come to expect from GT Solar.” “Hong Kong is the ideal place to locate our Asia headquarters,” said Jeff Ford, managing director for GT Solar Hong Kong, Limited. “It offers a favorable business climate with a deep pool of talent that we have already taken advantage of to build a world-class team of experienced professionals to lead our business. Our local team includes sales, business development, service, supply chain, logistics, and quality assurance. Expanding these business functions directly in the region allows us to compete more effectively in the fast-growing solar market.” GT Solar has been doing business in Asia since 2002. Since then the company has played an important role as an equipment provider, to helping the region’s early adopters establish their PV and polysilicon manufacturing operations. Today, many of these companies have grown to become some of the region’s largest solar manufacturers in China, Korea, and Taiwan, and are using GT Solar products and technologies to improve productivity and lower their cost of manufacturing. In September of 2009, the company opened its facility in Shanghai, China to provide greater service and support to its growing customer base in the region. The Shanghai facility will continue to provide installation resources, demonstration capabilities for customers wishing to test new process recipes, product training and spare parts inventory. PV equipment product development, engineering and R&D will remain in the company’s corporate headquarters in Merrimack, New Hampshire, and product development, engineering and R&D for its polysilicon equipment will remain in Missoula, Montana.



GT Solar also announced that its next DSS crystalline growth furnace, the DSS650, has begun beta production evaluation with customers. The new system provides an upgrade path for current customers using DSS 240, DSS450 and DSS450HP systems in their production environments. The DSS650 is capable of producing ingots larger than 600 kilograms and is compatible with the chamber configuration of current DSS systems. Commercial availability of the new system is expected for early calendar year 2011. “The DSS650 continues our commitment to customers to lower their manufacturing costs by leveraging their investment in our crystalline growth furnaces to take advantage of new technology,” continued Gutierrez. “We designed the new DSS650 system so current customers can easily upgrade to the new system, which underscores our commitment to protecting our customers’ investment in GT Solar DSS equipment.” With over 1,700 systems in the field, GT Solar’s DSS ingot growth furnaces are widely used in PV wafering operations. GT Solar’s innovation and expertise in mechanical design, vacuum and high-pressure chambers, control system design, and crystal growth modeling, provide customers with a technologically advanced directional solidification furnace that consistently produces high quality ingots with optimized mass ingot yield.

Solar Frontier and GE Enter Global CIS Module Supply Agreement The modules produced for GE by Solar Frontier will be part of GE’s utility-scale solar projects. The contract will ensure that its customers have a reliable supply of standard-setting thin-film solar modules for large ground-mount and roof-top installations. Solar Frontier will supply GE with its proprietary CIS (copper, indium, and selenium) thin-film solar modules as part of GE’s globally marketed portfolio of solar energy solutions. The company will provide GE branded panels to help meet the growing global demand for reliable clean-energy solutions. In

return, GE will be providing its power plant expertise to enhance the development of Solar Frontier’s CIS technology for use in utility-scale solar installations. GE’s extensive testing and benchmarking determined that Solar Frontier modules offered a compelling combination of performance and efficiency, meeting the established high standards of GE’s globally respected brand. “By teaming up with a billion-dollar global industry leader, Solar Frontier demonstrates that the solar market has matured to support large-scale players,” said Shigeaki Kameda, President and CEO, Solar Frontier. “GE’s selection of Solar Frontier’s thin film technology establishes our leadership in bringing bankable, reliable and ecological solar technology to the global market.” The modules produced for GE by Solar Frontier will be part of GE’s utility-scale solar projects. The contract will ensure that its customers have a reliable supply of standard-setting thin-film solar modules for large ground-mount and roof-top installations. “Our modules have been proven in field tests since 2003, and we will have gigawatt-scale production online by next year,” added Kameda. “For a stable, mature solar market, we have to combine reliable panels with reliable supply chains.” The modules will be manufactured at Solar Frontier’s state-of-the-art, automated production plant in Miyazaki, Japan. The Miyazaki facility will be the world’s largest PV factory when the third phase of production comes online next year. The agreement with Solar Frontier was included in GE’s announcement of an expanded portfolio of highly differentiated solar solutions that would establish GE “as the global leader in the Renewable Energy space,” offering both leading technology and “the unique bankability that comes with one of the world’s leading brands.” Solar Frontier uses fewer natural resources and raw materials than competing crystalline-silicon processes, enabling an industry leading energy payback time of less than one year, and less carbon emissions per kilowatt of production capacity. Materials like cadmium or lead are not used in the production process, minimizing the environmental



impact and offering superior PV panel recyclability. Solar Frontier is a 100% subsidiary of Showa Shell Sekiyu K.K. Its proprietary CIS technology, (denoting key ingredients copper, indium, and selenium), is claimed to have the best overall potential to set the world’s most enduring standard for solar energy. This is based on the firm’s legacy of work in solar technology since the 1970s, where the priority focus given to CIS since 1993, has successfully been applied in large scale CIS commercialization since 2007. The critical factors that combine to make CIS the overall economical and ecological leader include high efficiency and low production costs as well as superior reliability, stability, sustainability, non-toxicity, and lower overall energy consumption in the manufacturing process to yield a faster energy payback time. In 2009 Solar Frontier announced plans for a 900MW factory in Miyazaki, Japan. Scheduled to commence operations in 2011, the firm claims it will become the world’s largest photovoltaic production facility, enabling Solar Frontier to meet worldwide demand for the new standard in affordable solar panel performance.

Johns Manville to Assess Ascent Solar CIGS Modules in Colorado Johns Manville (JM) will test Ascent Solar’s thin-film Copper Indium Gallium (di)Selenide (CIGS) at an existing installation to evaluate performance against current laminated modules. Ascent Solar Technologies and Johns Manville have announced, after extensive internal product development and testing, that CIGS laminated modules from Ascent Solar are ready for beta test deployment at the JM Technical Center (JMTC) in Littleton, Colorado. The Ascent Solar IEC 61646 (20 year life expectancy) certified and UL certification (safety test) pending modules will be compared side-by-side against existing thin-film modules currently installed at JMTC.

“This is an important step forward in our ongoing collaboration with Ascent Solar,” noted Tim Swales, Johns Manville VP of Research and Development. “The installation at our test site will provide the performance data we need in order to demonstrate the readiness of Ascent’s emerging high-power lightweight CIGS modules in order to make it available to our customers. As valued partners, we look forward to further collaboration and assessment of their product and ensuring our customers are successful.” The test installation is done to collect performance data, evaluate architecture aesthetics and showcase the potential of Ascent Solar’s CIGS high-power modules against the current thin-film technology. For the pilot, installation modules have been applied to the top surface of the roofing membrane. The long-term objective is to integrate the modules into the roofing material itself as a factory-applied solution that JM markets under the Power Blanket brand. This external deployment will help set a standard for the integration and installation of lightweight flexible CIGS modules going forward as this will be the first time a CIGS monolithically integrated module manufactured using a plastic substrate has been integrated onto an existing commercial roofing installation for competitive commercial evaluation. Ascent Solar President and CEO Farhad Moghadam added, “We are pleased that our product development with Johns Manville has progressed to this stage. Our lightweight, durable and high-power CIGS modules are an ideal match for true integration into the Johns Manville commercial roofing material product line. Installation onto the test site is a real indication that our product development is progressing and is crucial to our viability for larger system installations down the road.” “Now that we have established IEC 61646 certification and have UL certification pending, we are pleased to launch pilot project installations with an industry leader like JM. Ascent Solar’s entry to the BAPV market with the highest power density flexible solutions and highest power modules will enable a new level of power production for flexible commercial applications,” concluded Rafael



Gutierrez, Senior VP of Sales and Marketing for Ascent Solar. Johns Manville is a Berkshire Hathaway company and a leading manufacturer and marketer of premium-quality products for building insulation, mechanical insulation, commercial roofing, and roof insulation, as well as fibers and nonwovens for commercial, industrial, and residential applications. JM serves markets that include aerospace, automotive and transportation, air handling, appliance, HVAC, pipe and equipment, filtration, waterproofing, building, flooring, interiors, and wind energy. In business since 1858, the Denver-based company holds leadership positions in all of the key markets that it serves. JM employs approximately 6,500 people and operates 41 manufacturing facilities in North America, Europe and China. Ascent Solar Technologiesis a developer of thin-film photovoltaic modules with substrate materials that can be more flexible and affordable than most traditional solar panels. Ascent Solar modules can be directly integrated into standard building materials, space applications, consumer electronics for portable power or configured as stand-alone modules for large scale terrestrial deployment. Ascent Solar is headquartered in Thornton, Colorado.

Ascent Solar Flexible CIGS Module is First to Achieve External IEC 61646 Certification This latest development will see that the thin-film flexible monolithically integrated CIGS module manufacturer can aggressively push into the commercial, industrial and residential rooftop markets. Ascent Solar Technologies, a developer of state of the art flexible thin-film solar modules, says that it has become the first manufacturer of thin-film flexible monolithically integrated CIGS modules to receive full IEC 61646 certification upon completion of environmental testing.

The environmental testing of Ascent Solar modules for this paramount milestone was conducted by an independent laboratory under the requirements of IEC 61646 standards. The Ascent Solar modules successfully passed the complete battery of tests required including the rigorous standard of one thousand (1,000) hours of damp heat testing (85 % relative humidity and 85° C temperature) set forth by IEC for performance and long term reliability. Becoming the first high power flexible CIGS module manufacturer to complete certification now opens the door for an aggressive push into building integrated photovoltaic (BIPV) and building applied photovoltaic (BAPV) applications for use in commercial, industrial and residential rooftop markets. Nanomarkets reports that BIPV applications are the fastest growing PV segment and is projected to grow to a $6.6 billion market by 2015. Farhad Moghadam, President and CEO of Ascent Solar stated, “Becoming the first monolithically integrated flexible CIGS module manufacturer to achieve IEC certification is a major industry milestone. We are now looking forward to demonstrating our ability to compete with existing technologies currently being used for large commercial, industrial and residential rooftop applications by adding new beta site installations in addition to those completed with existing and new potential customers that have been waiting for this development. “ He continued, “We feel that we have a significant advantage when it comes to power to weight ratios and the real capability our product has to reduce balance of systems costs in turn reducing overall system installed cost to the end customer. Our demonstration of the first flexible CIGS package which meets the IEC testing opens the door to penetration into these large market opportunities.” Ascent Solar Technologies is a developer of thin-film photovoltaic modules with substrate materials that can be more flexible and affordable than most traditional solar panels. Ascent Solar modules can be directly integrated into standard building materials, commercial transportation, automotive solutions, space applications, consumer electronics for portable power or configured as stand-alone modules for large scale terrestrial deployment. Ascent Solar is headquartered in Thornton,



Colorado, U.S.A.

Hyundai HI & Saint-Gobain form JV to Enhance CIGS Usage in Korea The ‘Hyundai Avancis’ joint-venture will produce an annual power output of 100 MW based on CIGS thin-film technology, designed for roofs and solar fields After launching the construction of a second Avancis plant in Germany last June, Saint-Gobain and Hyundai Heavy Industries (HHI), have announced that they are building a third high-efficiency PV panels facility in Korea. This partnership between the two groups will take the form of a 50-50 joint-venture, called Hyundai Avancis. The first manufacturing facility for the joint-venture will be designed identically to the second Avancis plant currently under construction in Germany, both in manufacturing capacity and technology terms. In this way, it will produce an annual volume of 850,000 modules based on CIGS (Copper - Indium - Gallium - Selenide) thin-film technology, designed for roofs and solar fields. In other words, an annual power output of 100 MW, or the equivalent yearly energy requirements of a town with 15,000 inhabitants. The site should be operational from the 2nd quarter of 2012 and will supply the global market. Its modules will be marketed independently by Avancis and HHI. Based on depositing coatings of CIGS on a glass substrate, the technology developed by Avancis avoids using traditional crystalline silicon. This technology makes it possible to imagine production costs as low as other thin-film based techniques, while its electrical efficiency (above 12% industrially and up to 20% in the laboratory) is close to the higher yields achieved using polycrystalline silicon cells. As well as being suitable for solar fields, CIGS thin-film based modules are especially recommended for roof installations, due to their simplicity of assembly, their attractive appearance and their reliability.

“With this investment, Saint-Gobain significantly accelerates its growth on the solar market, by banking on a competitive and innovative technology. This latest illustration of the Group’s commitment to renewable energies testifies to the growth potential of Avancis, the reference player on the high-efficiency thin-film PV modules market” states Pierre-Andre de Chalendar, Chairman and CEO of Compagnie de Saint-Gobain. “Already well located in Korea (particularly in Flat Glass where it has 4 float lines and several processing units for the automotive and building sectors), Saint-Gobain strengthens its position in this country in association with HHI, whose industrial and technological know-how is recognized worldwide” declares Jean-Pierre Floris, Senior Vice-President of Compagnie de Saint-Gobain and President of the Innovative Materials Sector. “By expanding into the high-efficiency CIGS PV market, under a joint-venture with Saint-Gobain, HHI is on track with its plan to become a global supplier in the renewable energy sector via innovation and diversification. Above all, HHI will be one step closer to achieving the global commitment of pursuing an era of clean energy. We believe that we will soon fulfill these commitments that will provide a strong foundation for our future generations,” says Keh-Sik Min, Chairman of Hyundai Heavy Industries. In 2010, the PV solar power market has grown tremendously and installed power worldwide is currently estimated at 30 GW, i.e. enough energy to meet the requirements of 5 million Western Europeans. This rise should continue at a steady pace over the years to come, enabling the sector to grow by relying less on public subsidies. Located in 64 countries with over 190,000 employees, Saint-Gobain, a leader in the habitat and construction markets, designs, manufactures and distributes building materials, providing innovative solutions to meet growing demand in emerging and mature countries, for energy efficiency and for environmental protection. Hyundai Heavy Industries has maintained a leading position in the world shipbuilding market and is now a leading integrated heavy industries company with six business divisions: Shipbuilding, Offshore & Engineering, Industrial Plant & Engineering,



Engine & Machinery, Electro-Electric Systems, and Construction Equipment. HHI manufactures both advanced Solar Power and Wind Turbine system products. It claims to be the only South Korean company that is able to produce entire solar value chain products ranging from polysilicon, solar cell and solar module all the way to power conditioning systems. HHI is currently expanding facilities to increase annual production capacity of silicon solar cell and modules from 330MW to 600MW. In August 2010, HHI won a USD 700 million contract to build a 175MW solar power plant from US based Matinee Energy.

Concentrix Solar & Johnson Controls Will Bring CPV into 21st Century Utilities Market Johnson Controls will build, operate, maintain and provide lifecycle support for solar installations built using Concentrix CPV technology around the globe. Concentrix Solar, a division of Soitec, focusing on concentrator photovoltaic (CPV) systems, has finalized a global alliance with Johnson Controls. Johnson Controls provides turnkey project development, engineering, procurement, construction, operation and maintenance of large scale energy efficiency and renewable energy projects. Under this collaboration, Johnson Controls and Concentrix Solar will identify and respond to commercial opportunities for the project development, and construction of utility scale solar energy facilities. Johnson Controls will build, operate, maintain and provide lifecycle support for solar installations using Concentrix CPV technology. The combination of the respective strengths of both companies: efficient and cost effective technology on the one hand, and a leader in energy efficiency and sustainability on the other hand, should provide to accelerate the successful development and installation of solar renewable energy utility scale plants in Direct Normal Irradiation (DNI) regions

across the globe. “Before forming our alliance with Concentrix Solar, we studied all primary solar technologies and market participants. We concluded that the combination of Soitec’s technical capabilities in engineered substrate solutions and Concentrix Solar’s module design together provides the market leading solution for solar power generation in high DNI regions around the world,” stated Iain Campbell VP & GM of Global Energy and Workplace Solutions, Johnson Controls. “We are delighted to team up with Johnson Controls, who shares our vision for sustainable and economically viable, solar renewable energy,” said Andre-Jacques Auberton-Herve, chairman and CEO, Soitec. “Together, we understand the market opportunity and positive environmental impact that solar renewable energy power will bring to both existing and future facilities, and are excited to provide integrated solutions to our customers.” Concentrix Solar’s cost effective and innovative CPV technology, with its high efficiencies and two-axis tracking, is ideally suited to areas in the world that have high direct solar irradiation. Concentrix Solar GmbH is a leading supplier of concentrator photovoltaic equipment and turnkey power plants for sunny locations. The company was founded in February 2005 as a spin-off from the Fraunhofer Institute for Solar Energy Systems ISE. In December 2009, the firm became a division of the Soitec Group. Concentrix Solar operates a fully automated industrial production line in Freiburg, Germany. Its FLATCON(R) concentrator modules use Fresnel lenses to concentrate sunlight 500 times and focus it onto small, highly efficient solar cells that convert the light into electrical energy. With this technology, Concentrix Solar achieves AC system efficiencies of 25 %, claimed to be almost twice as high as those achieved by conventional silicon technology. As a result, these systems can reduce the cost of electricity generation by 10 to 20 % as compared to other solar technologies, depending on the location of the installation.

Reportlinker Adds Building



Integrated Photovoltaics to Portfolio Reportlinker.com has announced that a new market research report is available in its catalogue entitled “Building Integrated Photovoltaics”. Pike Research has released a new report examining the expanding global markets for BIPV and BAPV including a comprehensive analysis of demand drivers and economics, technology issues, and key industry players. The report is available from Reportlinker.com. Historically, building-integrated photovoltaics (BIPV) has been relegated to a niche market because solar modules and panels have simply cost too much and have been too difficult to install on residential and commercial roofs as well as building walls, windows and other parts of the building structure. Additionally, production of BIPV products with appealing aesthetics has been limited. Starting in 2010, however, BIPV market dynamics will change and worldwide demand for solar panels, shingles and modules will surge to almost 2.4 GW by 2016 says Pike Research. Adoption of BIPV and building-applied photovoltaics (BAPV) is being driven by several key market developments including a rapidly falling installed cost per watt; greater ease of installation on rooftops primarily by means of new, high-efficiency CIGS-technology panels and shingles; improved aesthetics of BIPV/BAPV materials with the introduction of solar tiles and shingles that blend into rooftops; newly instituted generous feed-in tariffs in several countries; efficiency improvements in both c-Si modules and flexible thin film panels and shingles; an enhanced supply chain for BIPV/BAPV solar products; and an increasing desire to “go green” by owners of residences and commercial buildings. The report includes base case and upside scenario forecasts for BIPV/BAPV installed capacity by world region and technology, along with forecasts of wholesale market revenues through 2016.

Spire Semiconductor

produces a world-record 42.3% efficient CPV cell. Spire Semiconductor has produced a world record efficiency concentrator photovoltaic (CPV) solar cell

Spire Semiconductor, a wholly owned subsidiary of Spire Corporation, has produced a world record efficiency concentrator photovoltaic (CPV) solar cell. The 0.97cm(2) cell was measured by the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) to have a peak efficiency of 42.3% at 406 suns AM1.5D, 25C (42.2% at 500 suns).

Edward D. Gagnon, General Manager of Spire Semiconductor, LLC, stated, “In early 2009, Spire Semiconductor was awarded an NREL Photovoltaic (PV) Incubator subcontract to develop a high efficiency triple junction, gallium arsenide (GaAs) cell. In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency. This is a remarkable achievement by our technical team. NREL has been extremely helpful during the entire program, with timely responses to our confirmation requests for accurate efficiency measurements. Their continued support enabled us to validate our new bi-facial cell architecture. This higher efficiency, next generation GaAs CPV cell platform is now available commercially to the concentrator systems providers.”

Roger G. Little, Chairman and CEO of Spire Corporation, said, “We are pleased to reach the record high CPV cell efficiency. The availability of this new high-efficiency cell will advance next-generation CPV system performance and reduce system cost for manufacturers, helping to move solar energy ever closer to the goal of grid parity.”

Memoranda to Create $250 Million Solar Farm in Ohio Ohio Governor Ted Strickland today announced agreements to create Turning Point Solar, a 49.9 MW solar array to be built on strip-mined land adjacent to The Wilds nature conservancy.



At signing ceremonies in Governor Strickland’s cabinet room, American Electric Power (AEP) CEO Michael G. Morris signed a memorandum of understanding with project developers New Harvest Ventures and Agile Energy to enter into a 20-year purchase agreement for the facility’s power.

Pending approval of incentives to be provided by state and local governments, two prominent Spanish solar power component manufacturers, Prius Energy S.L. and Isofoton, have agreed to open new manufacturing facilities in Ohio to help construct the 239,400 panel solar array. If operating today, Turning Point would be the largest photovoltaic solar array in the United States. Approximately 300 jobs will be needed to build the project at peak construction. In addition, Prius and Isofoton have agreed to locate their North American operations in Ohio, creating more than 300 permanent manufacturing jobs.

“This project is compelling on several fronts,” said David Wilhelm, New Harvest Ventures partner. “Turning Point Solar will bring renewable energy to Ohioans at a reasonable rate, utilize reclaimed mine land in an innovative way, and bring new construction and manufacturing jobs to Appalachian Ohio.”

Last week, Gov. Strickland signed an executive order eliminating Ohio’s tangible personal property tax and real property tax for advanced and renewable energy project facilities, making it easier for energy companies to do business and create jobs in Ohio. In 2008, Strickland signed a landmark energy reform bill, SB 221, that calls for 25 percent of all energy consumed by Ohioans to come from advanced energy sources by 2025. Of that, .5 percent must be solar energy. “We recognized the future when we established our state’s aggressive renewable portfolio standard, invested in the energy industry and eliminated taxes for new energy facilities to create jobs and grow Ohio’s advanced energy industry,” said Governor Strickland. “Today, the future has recognized Ohio. One of the largest solar farms in the nation is going to be built here in Ohio, with solar panels and solar trackers made in Ohio, built by Ohioans with the know-how taught in Ohio colleges.”

Gov. Strickland, accompanied by state and federal lawmakers and project stakeholders looked on as Turning Point Solar developers signed memoranda

of understanding with AEP, Prius, Isofoton, and the University System of Ohio. Prius produces sun tracking equipment and racks for panels. Isofoton manufacturers large, 275 w solar photovoltaic panels.

“This is not your typical fixed solar array. To maximize output, Turning Point expects to deploy high-efficiency photovoltaic panels controlled by Prius Energy’s state of the art solar tracking equipment,” said José Carlos Sánchez-Muliterno, partner and board member for Albacete, Spain based Prius Energy S.L.

Isofoton CEO Angel Luis Serrano added, “Isofoton, the reference Spanish photovoltaic manufacturer and worldwide pioneer in solar energy since 1981, is committed to setting up a next generation factory model here in Ohio. The factory will be built with local suppliers for local end-users, and with a mandate to create good and green local jobs in close partnership with Ohio’s public sector energy leaders and private sector utilities. We understand that ‘Made in USA’ is an attribute to be proud of. We are honored to join Ohio’s corporate community, renewable energy sector and growing solar cluster, together with Turning Point Solar. We look forward to becoming a dedicated contributor to Ohio’s economy, putting locally manufactured Isofoton PV cells on Prius trackers and helping to make the green economy vision a reality.”

Turning Point Solar is using a tract of at least 500 acres of reclaimed land mined by the Central Ohio Coal Company between 1969 and 1991. The land was infamously strip-mined by the Big Muskie, then the world’s largest dragline, and one of the world’s largest mobile earth-moving machines. Big Muskie removed more than 608,000,000 cubic yards (465,000,000 m3) of overburden, which is twice as much earth as was moved during construction of the Panama Canal.

A wildlife park called The Wilds, which opened in 1994, was created from 10,000 acres of the land stripped by Big Muskie and reclaimed. Turning Point Solar is adjacent to The Wilds, on about 1,000 fallow acres of the reclaimed land owned by the nature conservancy and the AEP. Prairie planting tests are currently being conducted as part of plans to transform the land under the solar panels into an organic carbon sink.

Power Electronics ♦ industry news


“This announcement is the next chapter in a great story of transforming Ohio’s reclaimed mine lands,” said Wilds Executive Director Evan Blumer. “We see today that with responsible stewardship and visionary leadership, we can restore our land while we improve our energy diversity and security, and bring the green collar economy to Appalachia.”

Zane State University and Hocking College have both developed programs to train workers in a variety of green jobs programs including the essential skills needed to build and maintain solar operations such as Turning Point.

Congressman Zack Space (OH-18), in whose district the project will be located, concluded, “Today’s announcement of more than 300 jobs coming to Southeastern Ohio provides an enormous boost for our economy in the short-term, and paves the way for the kind of long-term development that will help Appalachian Ohio reverse the economic disparity that has been so devastating to our towns and communities.”

Industry newsPower electronics

Powdec 600 V GaN Schottky Diode Breaks BarriersThe diode dramatically reduces power losses and can be employed in the production of power conditioning of solar power systems, motor drive circuits and in inverter and power factor correction (PFC) circuits. Japanese firm Powdec K.K. has successfully developed a Schottky diode with a high breakdown voltage of over 600 V using next generation Gallium Nitride (GaN) technology. In addition to the vertical Schottky diodes being made on low-cost, large diameter sapphire wafers, a proprietary method was developed where the sapphire substrate is removed, further improving the thermal conductance of the device.

The on-resistance of this GaN diode is over 100 times smaller than existing silicon power diodes, resulting in the reduction of power losses by more than 50%. Powdec plans volume shipments of the Schottky diodes by 2012.

Figure 1. SEM Image of GaN vertical Schottky diode after separation from substrate Powdec’s new GaN Schottky diode can be used in the power conditioning of solar power systems, motor drive circuits, as well as in inverter and power factor correction (PFC) circuits that are key in the power supply unit of servers and other equipment. The use of these GaN diodes, will dramatically lower the DC/AC conversion power losses. The replacement of the existing silicon power diodes by these GaN power diodes, results in a 15 to 30% reduction in emitted CO2. Powdec’s products will enable an accelerated adoption of smart grids throughout our societies (where power and information networks are tied together, and where individually generated electricity from solar power etc. is smoothly connected to the main power grid). As large diameter sapphire substrates are used, devices can be manufactured at very low cost like LEDs. At 620 V, a leak current of less than 1 mA/cm2 was achieved. So for a 10 A diode, leak current will be on the order of 20 microamps, which is one-tenth that of than other GaN devices.


industry news ♦ Power Electronics

Figure 2. Comparison of vertical Schottky diode device structure using conventional technology and Pwerdec’s technology

The diode has a vertical structure and it doesn’t suffer current collapse as in lateral devices. The thickness of the diode is extremely thin at approximately 20 microns, which gives very low conduction resistance and thermal resistance. This provides the device with low power losses and higher operating temperatures as well as allowing reduced system size as less thermal components are needed. The GaN Schottky diode provides high-speed performance so high frequency operation is possible. This allows for a reduction in capacitors and inductors needed in the system, thus leading to smaller and lower cost systems. According to Powdec, it has previously been said that to create a GaN diode with a vertical structure like a silicon diode would not be possible unless expensive GaN wafers are used. Sapphire and silicon wafers are lower cost than GaN wafers. However, until now, their use has led to lower quality GaN crystal growth on top, reducing the voltage limits of the diode. Powdec has developed an innovative epitaxial lateral overgrowth (ELO) technology and succeeded in realizing very high quality GaN crystal growth on sapphire wafers with numbers of dislocations being several 100 times less than that produced by conventional growth technologies. While this Schottky diode has achieved a breakdown voltage of 620 V, Powdec’s proprietary technology also allows the possibility to create 1,200 V diodes. Powdec has been granted patents for this technology. To accelerate the market adoption of these innovative, low-power

GaN devices, Powdec is actively expanding its partnerships worldwide. Powdec develops and produces high quality Gallium Nitride (GaN) semiconductor wafers and devices. The firm, based in Oyama City, Japan, focuses on delivering next-generation semiconductor power devices to create an energy efficient, green future.

SDK Maps Out New Business Plan ‘PEGASUS’ for 2011-2015 The firm will expand businesses in high-purity gases for semiconductor processing and various functional materials. SDK also aims to quickly commercialize new businesses in SiC epitaxial wafers for power devices. Showa Denko K.K. (SDK) has prepared a new medium-term consolidated business plan named “PEGASUS” for the 2011-2015 period in which SDK will, as an “evolving chemical company with individualized products,” aim to build up strong and diversified businesses on a global scale and establish leading positions on the market. In response to the drastic changes in the business environment since the latter half of 2008, SDK has been carrying out structural reform under Passion Extension for the 2009-2010 period. As a result of withdrawal from unprofitable operations, drastic cost reductions, and improvement in profitability of base businesses, SDK is achieving V-shaped recovery in performance this year. Thus, SDK has decided to launch a new consolidated business plan for 2011 and after called PEGASUS. While rapid economic growth in emerging countries is bringing about the rise in living standards, there is increasing need for concerted efforts to control impacts on the global environment. This social trend is producing new market needs. Specifically, demand is growing for compact electronic devices with higher quality, speed, and capacity, which will lead to more convenience and comfort. Furthermore, new technologies are needed to



realize healthy and safe lifestyles through various environmental protection measures, including those against global warming. And the security of energy supply should be achieved through reductions in dependence on fossil fuels and conservation of energy. To meet these global market requirements, SDK has decided to focus on the two business domains of “Energy/Environment” and “Electronics.” It will provide components, materials and solutions in these areas based on its proprietary advanced technologies, thereby contributing to the creation of society in which affluence and sustainability are harmonized. In the business portfolio SDK aims to enhance businesses in the following three categories: growing base businesses, stable base businesses, and growth/new growth businesses. It will concentrate its managerial resources on globally competitive operations. The firm will expand businesses in high-purity gases for semiconductor processing and various functional materials. SDK also aims to quickly commercialize new businesses in SiC epitaxial wafers for power devices, and ally derivatives such as heat-resistant transparent films. In addition to existing managerial resources, SDK will utilize M&A and partnerships, when necessary for promotion of business strategies and R&D, to accelerate the speed of launching new businesses. Under PEGASUS, the firm will aim to record operating income of JPY 80 billion and free cash flows of JPY 40 billion in 2013.

Soitec and SEI Collaborate on GaN Substrate Development Applications for the engineered substrates include high brightness LEDs and electric power devices designed for hybrid and full electric vehicles. Soitec, a leading supplier of engineered substrates and Sumitomo Electric Industries (SEI) a worldwide provider of compound semiconductor materials,

are working together to develop engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline quality of Sumitomo Electric’s GaN wafer at a lower cost. This technology will therefore facilitate widespread use of GaN substrates in applications like high brightness LEDs as well as electric power devices designed for hybrid and full electric vehicles. “Our collaboration with Soitec will open the door to high quality, lower cost GaN substrates,” said Masamichi Yokogawa, Sumitomo Electric’s Executive Officer and General Manager of Compound Semiconductor Material Division. “We have demonstrated that the transfer of a thin layer of our high quality GaN crystal to a carrier wafer is the right approach to make our GaN material accessible for various applications such as power devices and white LEDs. We are expecting the collaboration with Soitec will enable wider use of our high-quality GaN wafer. We believe device manufacturers focused on low unit area costs will find value in the greater functionality of these engineered substrates.” “We are delighted to work with Sumitomo Electric and excited about what we have been able to achieve together so far. We are partnering with the leader in GaN wafer manufacturing to offer engineered substrates that have the best crystal quality available today. This collaboration represents the first step of an important move in our strategy to address the need for dramatically improved efficiency in power conversion and lighting with innovative materials engineering solutions,” said Andre-Jacques Auberton-Herve, CEO of Soitec. The Soitec Group is an innovator and provider of the engineered substrate solutions that serve as the foundation for advanced microelectronic products. The group leverages its proprietary Smart Cut technology to engineer new substrate solutions, such as silicon-on-insulator (SOI) wafers, which



became the first high-volume application for this proprietary technology. Since then, SOI has emerged as the material platform of the future, enabling the production of higher performing, faster chips that consume less power. Soitec says it produces more than 80 % of the world’s SOI wafers. Headquartered in Bernin, France, with two high-volume fabs on-site, Soitec has offices throughout the United States, Japan and Taiwan, and a new production site in Singapore. Three other divisions, Picogiga International, Tracit Technologies and Concentrix Solar, complete the Soitec Group. Picogiga delivers advanced substrates solutions, including III-V epiwafers, to the compound material world for the manufacture of high-frequency electronics and other optoelectronic devices. Tracit, on the other hand, provides thin-film layer transfer technologies used to manufacture advanced substrates for power ICs and Microsystems, as well as generic circuit transfer technology, Smart Stacking for applications such as image sensors and 3D-integration. In December 2009, Soitec acquired 80% of Concentrix Solar, a leading provider of concentrated photovoltaic (CPV) solar systems for the industrial production of energy. With this acquisition, Soitec is entering the fast-growing solar industry; capturing value through the system level. Soitec, Smart Cut, Smart Stacking and UNIBOND are trademarks of S.O.I.TEC Silicon On Insulator Technologies. Sumitomo Electric Industries designs, manufactures and sells optical fibers/cables/components, advanced electronic devices, and automotive parts. Through successful strategies of research and diversification, Sumitomo Electric has become one of the world’s leading companies at the forefront of the revolution in the electronics field. Sumitomo Electric’s world-class research and manufacturing capabilities in compound semiconductors continue to expand and strengthen the product portfolio while maintaining industry leading levels of reliability. The company has global operations in more than 30 countries and employs 170,000 people.

GaN - meeting emissions regulations

Dr Mike Czerniak from Edwards will present on “GaN - meeting emissions regulations” at CS Europe.

CS Europe conference takes place 22nd March 2011, Hilton, Frankfurt and focuses on “What next for the Compound Semiconductor Industry?” Book now at www.CSEurope.net · What next for the Compound Semiconductor Industry - presented at CSEurope conference by Klaus H. Ploog, Pioneer of Molecular Beam Epitaxy (MBE)· Role of GaN RF Power Technology for Tomorrow’s Commercial and Defence Wireless Applications - presented at CSEurope conference by Jeff Shealy, Division Vice President, RFMD· How to make a state-of-the-art visible red laser, what its specs are, and what new markets it can target - presented at CSEurope conference by Dr. Petteri Uusimaa, President, Modulight· The urgency for the world to make power grids digital (smart grids) and photovoltaic developments for electricity production from solar - presented at CSEurope conference by Jan-Gustav Werthen, Senior Director, Photovoltaics, JDSU· 3G/4G requirements for wireless systems and the role GaAs and GaN devices will play in meeting these requirements - presented at CSEurope conference by Dr Otto Berger, Corporate Advanced Technology Director, TriQuint Semiconductor, Inc· What’s needed from GaAs and GaN for tomorrow’s wireless - presented at CSEurope conference by Marc Rocchi, CEO, OMMIC· Recent Progress on Green InGaN Laser Diode Development at OSRAM Opto Semiconductors - presented at CSEurope conference by Alexander Bachmann, Marketing Engineer, OSRAM Opto Semiconductors GmbH· What are the success factors for the deployment of Solid State Lighting? - presented at CSEurope conference by Dr. Michael Fiebig, Director Marketing and Business Development Solid State Lighting, OSRAM Opto Semiconductors GmbH· How will SiC power devices help getting a greener planet - presented at CSEurope conference by Mats Reimark, CEO, TranSiC· SiC Advances for Power Electronic



Applications - presented at CSEurope conference by Dr. Markus Behet, Europe Business Development Manager, Dow Corning Compound Semiconductor· Future Proofing Networks with 100 Gigabit Optics - presented at CSEurope conference by Scott Parker, Executive Vice President Sales and Marcom, Oclaro, Inc· High performance compound semiconductors for infrastructure, automotive and defence applications - presented at CSEurope conference by Dr. Ulf Meiners, Chief Technical Officer, UMS and Mark Murphy, Director Marketing, RF Power & Base, NXP· Batch and single wafer processing strategies for HBLEDs - presented at CSEurope conference by Dr Mike Cooke, Chief Technology Officer, Oxford Instruments Plasma Technology· GaN power electronics: Market forecasts and industry status - presented at CSEurope conference by Dr. Philippe ROUSSEL, Project manager Power Electronics and Compound Semiconductors, Yole Développement· Efficient High-Voltage GaN Devices and ICs for Next Generation Power Management Solutions - presented at CSEurope conference by Dr. Ertugrul Sönmez, Business Development, MicroGaN GmbH· Standardisation in compound semiconductors - an essential step for furthering the efficiency & profitability of the industry. - presented at CSEurope conference by Roy Blunt, SEMI International Compound Standards· GaN - meeting emissions regulations - presented at CSEurope conference by Mike Czerniak, Product Marketing Manager, Exhaust Gas Management, Edwards· Engineered Substrates for future compound semiconductor devices presented at CSEurope conference by Dr. Thomas Uhrmann, Business Development Manager, EV Group (EVG) CSEurope web site: www.CSEurope.netDelegate booking: http://www.cseurope.net/register.phpContact: [email protected]

EPC eGaN Products Awarded China Innovation Award The firm says the award shows that silicon-based MOSFETs have reached the end of the road and

that eGaN technology will lead the way for power transistors. Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards. “Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor’s Choice Award by EDN China Innovation Award’s panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC’s potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap”, said William Zhang, Publisher of EDN China. “We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and CEO. Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few. Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities.



EPC is a provider of enhancement mode Gallium Nitride based power management devices. EPCclaims to be the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, Microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

LG Innotek collaborates with Linkoping University on silicon carbide project LG Innotek,is collaborating with researchers at Linköping University, Sweden on a nine-year project to develop the manufacture of semiconductor silicon carbide (SiC) for optoelectronic components.

“The researchers at Linköping are world class, so it was natural to choose them as a partner. We are very enthusiastic about working with them,”said Joo-Won Lee, technical director of LG Innotek, at the project’s initiation in Linköping on November 12 2010. Investments in high-performance electronics material silicon carbide is a part of the company’s newly-determined future strategy. The project is financed in part by the Republic of Korea. Linkoping University role is to develop methods of growing high-quality silicon carbide through epitaxy process`s. LG will also fund a new, state of the art reactor for the purpose.

Rohm introduces high-efficiency SiC Schottky barrier diodes The low drive voltage of SiC SBDs features a reverse recovery time (trr) of 15nsec – much less than the 35nsec to 50nsec of conventional Si-based FRDs says Rohm. The development of next-generation SiC (silicon carbide) Schottky barrier diodes (SBDs) has been announced by Rohm, featuring lower loss and higher voltage capability compared to silicon-based

SBDs. The SCS110A series also provides advantages over even other SiC SBDs currently on the market regarding forward voltage and operating resistance, making them ideal for a wide range of applications, including PFC (power factor correction) circuits, converters, and inverters for power conversion such as those used in EV/HEV and air conditioning units. In the power electronics sector, conversion losses generated in conventional (Si-based) semiconductor devices have become increasingly problematic, prompting a search for a viable alternative. Silicon carbide (SiC) has emerged as the most promising candidate due to its superior material properties, in particular lower loss. The new SCS110A series of SiC SBDs features a reverse recovery time (trr) of 15nsec – much less than the 35nsec to 50nsec of conventional Si-based FRDs. As a result, recovery loss is reduced by as much as 2/3rds, decreasing heat generation as well. In addition, the products ensure more stable operation during temperature changes than silicon FRDs, contributing to smaller heat sinks. Compared with other SiC SBDs, the series improves trr and reduces chip size by 15%, along with operating resistance, temperature characteristics, and forward voltage (VF=1.5V at 10A), resulting in greater efficiency. Rohm has also solved the problems associated with the mass production of SiC SBD devices, such as uniformity of the Schottky contact barrier and formation of a high-resistance guard ring layer that does not require high-temperature processing, making uniform, in-house production possible, says the company. Key Features (SCS110A Series):

Ultra-small reverse recovery charge (Qrr) enables high-speed switchingStable temperature characteristics trr (reverse recovery time) characteristics independent of temperature



Fujitsu SiGe Optical Switch Cuts Power Consumption by Half The firm sees its latest SiGe product as a solution for ever-increasing network equipment power consumption. Fujitsu Laboratories has halved the power consumption of an optical waveguide switch by using what it claims to be the world’s first use of fine-patterned silicon germanium (SiGe) over conventional silicon (Si). The prototype optical switch devices developed by the firm operate on 1.5 mW of power, approximately half the power required for conventional fine-patterned Si optical switching elements. This, says Fujitsu, represents the lowest power requirement in the world for an optical switching element capable of high-speed operation across a wide range of wavelengths. The newly-developed technology will help contain power consumption while supporting large-volume network traffic, thus enabling high-end services linking multiple cloud networks and ultra-high-definition videoconferencing, among other applications.

Parts of this research were undertaken as part of the work of the Vertically Integrated Center for Technologies of Optical Routing toward Ideal Energy Savings (VICTORIES) project. With the spread of data-intensive network services, such as cloud computing and ultra-high-definition video distribution, the volume of data being transmitted over networks looks set to rise continuously. According to the Japanese Ministry of Economy, Trade and Industry’s “Green IT Initiative” report (December 2007), the amount of electricity consumed by networking equipment in the year 2025 is predicted to be 13 times the 2006 figure if no energy-saving measures are taken. Conventionally, switching between optical network paths requires that signals be converted from light to electricity and back again to light in order to be processed - these conversions are problematic because of the considerable power they require. An optical switch that processes optical signals as they are - without the need for conversion to electricity - would greatly reduce its power requirements. This issue has spurred ongoing research and development efforts for next-generation networks. An optical switch is a device that can connect the paths of optical signals, and switch between them. A waveguide optical switch is a design that arrays multiple optical switching elements in series, between an optical-signal input point and output point. By combining the operations of each optical switching element, a desired optical signal path can be created (Figure 1). An optical waveguide switch employing silicon photonics uses well-established silicon fabrication technology, which allows for inexpensive mass production. Furthermore, optical switch devices based on nanometer-scale waveguides and control electronic circuits can be lined up in large numbers on the same substrate, large-scale optical switches can be fabricated compactly, measuring a mere few centimeters squared.



Large-scale optical-waveguide switches operate multiple optical switching elements simultaneously. The heat that this generates can degrade device performance, which necessitates the lowest possible power consumption for each optical switching element. With optical switching elements, the application of an electrical current to the refractive-index modulator causes electrons to accumulate in fine waveguides, which modulates the refractive index and switches the output port (Figure 2). With conventional optical switching elements made using fine-patterned Si, the electron-accumulation efficiency in fine Si waveguides is low, necessitating more current to achieve sufficient electron-accumulation, thereby increasing power consumption.

Fujitsu’s optical switching element uses fine-patterned SiGe in the refractive-index modulator (Figure 3). Forming fine-patterned SiGe, which has a narrower band-gap than Si, on top of Si allows for more efficient electron accumulation, and therefore less power is required for switching. Fujitsu’s newly-developed low-power technologies for optical switch devices represent a significant

step forward toward next-generation networking and pave the way for new services, such as high-speed services linking multiple cloud networks and ultra-high-definition videoconferencing. The company will proceed with development of large-scale integration technology and integration technology for control electronic circuits, for the realization of large-scale optical switches to enable next-generation networks.

“LAST POWER” Project Aims to Develop GaN-on-Si The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry. The partners in a new publicly-funded European research project have announced details of the multinational/multidisciplinary program called The LAST POWER (‘Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications). The aim of this important 42-month ENIAC (European Nanoelectronics Initiative Advisory Council) project is to provide Europe with strategic independence in the field of wide band gap (WBG) semiconductors. This field is of major strategic importance as it involves the development of highly energy-efficient systems for all applications that need power, from telecommunications to automotive, from consumer electronics to electrical household appliances, and from industrial applications to home automation. The consortium will develop European technology for the complete production chain for semiconductor devices built with SiC (Silicon Carbide) and heteroepitaxial GaN (Gallium Nitride on silicon wafers). These two semiconductor materials offer higher speed, current capability, breakdown voltage and thermal capability compared to conventional silicon technologies. “The power semiconductor market, which represents approximately 30% of the overall semiconductor market, is set to change significantly in response to the ever-increasing demand for more



energy-efficient devices,” said project coordinator Salvatore Coffa, Group VP and R&D General Manager, Industrial and Multisegment Sector, STMicroelectronics. He continued, “This key project, which targets secure strategic independence in the emerging field of SiC and GaN technologies, will place Europe at the forefront of energy-efficient devices.” The overall objective of the project is to develop a cost-effective and reliable integration of advanced SiC and GaN semiconductors in the European power microelectronics industry. The first priority is for the firm to achieve growth of large area (150mm) SiC and high quality heteroepitaxial GaN on 150mm Si wafers, beyond the current worldwide state-of-the-art for substrates, epitaxy and surface preparation. The next is to develop new dedicated equipment for material growth, characterization and processing of reliable and efficient SiC and GaN devices on 150mm wafers. Another aim is to demonstrate high-performance devices with properties that cannot be obtained on Si, including a 1200V/100A SiC MOSFET, SiC JFET capable of operating up to 250 degrees C, and GaN HEMT devices for power switching; this should enable the development advanced packages for high-temperatures devices and improve device reliability. The partners in the LAST POWER consortium are: STMicroelectronics S.r.l. (Italy) – project coordinator LPE S.p.A. (Italy) Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (Italy) Epitaxial Technology Center S.r.l. (Italy) Foundation for Research & Technology-Hellas (Greece) NOVASiC S.A. (France) Consorzio Catania Ricerche (Italy) Institute of High Pressure Physics UNIPRESS (Poland) Universita della Calabria (Italy) SiCrystal AG (Germany) SEPS Technologies AB (Sweden) SenSiC AB (Sweden)

Acreo AB (Sweden) Aristotle University of Thessaloniki (Greece)

GaN Power Device Market to Hit $350M in 2015 The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules. Yole Développement has released its new markets & technological study dedicated to Power GaN industry.GaN is an already well implanted semiconductor technology and widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems. That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Compared to Silicon, GaN exhibits largely better figures for most of the key specifications in terms of electric field, energy gap, electron mobility and melting point. Intrinsically, GaN could offer better performance than Silicon in terms of breakdown voltage, switching frequency and overall systems efficiency.

This report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It



provides company involvement as well as state-of-the-art technology. In addition, an extensive review of the possible substrates for GaN is provided, offering the most complete view of the Power GaN industry available to date. GaN technology is maturing and now offers transistor, diode and even IC ’s compatible with Power Electronic expectations, at least in the 0-600V range. Looking at Total Accessible Market, a $16.6b market size is envisioned, split into Power ICs, Power Discretes and Power Modules. Now, considering the GaN current state-of-the-art, Yole Développement assumes the most promising applications for Nitride Semiconductors would be IT and consumer, automotive and the following industries: PV inverters, UPS and motor control. That very cost-driven target make GaN-on-Si the only solution at short term “About 67 % of Power Electronics market is looking at 0-900V voltage range, mostly made of cost-driven consumer and IT applications”, explains Dr Philippe Roussel, Project Manager at Yole Développement. To address these segments require a high-volume manufacturing capability as well as a very aggressive market price positioning. Thus, the technical solution involving expensive bulk-GaN substrates are not compatible with market requirements. GaN-on-Si appears as the most cost-effective setup to reach at least the 0-900V applications. It has been calculated that GaN-on-Si HEMT could be 50% cheaper than the same SiC device. However, as of today state-of-the-art, it remains twice and even 3 times more expensive than the similar silicon device. The choice to integrate GaN instead of Silicon will be made at system level, while calculating the overall module cost. Implementing GaN will reducethermal management costs (fewer fans, smaller heat-sink…), RF filtering costs (higher switching frequency will need small capacitors and inductances). Also overall housing costs are expected to shrink as 30% to 50% overall module sizes should also reduce. So Yole Développement assumes GaN-on-Si is the preferred solution to enhance GaN market penetration over the power electronics industry.

GaN power electronics market has just started in 2010 along with the announcements of IR and EPC Corp. about their first products introduction. To now, the maximum commercially available Vb is of 200V that partially covers the IT and consumer segments. In their roadmap, these 2 companies and the other possible new incomers (MicroGaN, Furukawa, GaN Systems, Panasonic, Sanken, Toshiba and so on…) are announcing 600V and even 900V devices in a very short time. Such an increase in the Vb range, will allow GaN to step by step enter into the industrial and automotive segments. Taking into account the minimum qualification period needed for new technology implementation, Yole Développement does forecast that the inflexion point for GaN market ramp-up will occur early 2012, leading to a $50M+ market size by 2013 and ~$350M by 2015. In 2015, GaN device business should be equally split between IC ’s, discretes and modules. Based on the expected price erosion of the GaN-on-Si 6” epiwafers over the time, the GaN substrate market should exceed $100M in 2015. The author of the paper, Philippe Roussel, Ph.D holds a Ph-D in Integrated Electronics Systems from the National Institute of Applied Sciences (INS A) in LYON . He joined Yole Développement in 1998 and is senior manager of the Compound Semiconductors technology & economical market analysis department. Companies cited in the report include AmberWave, Ammono Sp, Applied Materials, AZZURRO Semiconductors, BluGlass, Cermet, Cotopaxi Materials LLC , Covalent Materials, Efficient Power Conversion Corp, EpiGaN, Episil, Freescale, Fuji Electric, Fujitsu Electronics, Furukawa Electric, GaN Systems, Goldeneye Inc., Group4 Lab, Hitachi Cable, HK UST, III -V Lab, IMEC , International Rectifier, IQE, Kyma Technologies, LumiLOG , MicroGaN, Micron Technology, Mitsubishi Chemical, NanoGaN, NEC, Nitronex, NTT , Oxford Instruments / TDI , Panasonic, Picogiga – SOITEC , Powdec, Renesas, Rensselaer Polytechnic Institute, Samsung-Corning, Sanken Electric, Soraa Inc., sp3 Diamond Technology, STMicro, Sumitomo Electric SEI , TopGaN, Toshiba, Toyota, Toyota R&D Lab, Ultratech, UMS , Velox, Vishay.



Multimillion Optical Chip Project to Open Door to Multibillion Market The PARADIGM project involves sixteen leading European enterprises, universities and knowledge institutes. The project is focused on standardizing the production and packaging of optical chips.

Last week Eindhoven saw the kick-off of the international R&D project PARADIGM (Photonic Advanced Research and Development for Integrated Generic Manufacturing). This project, which is led by Eindhoven University of Technology, is intended to standardize the development and production of optical chips, making them much cheaper and bringing all kinds of new products within arm’s reach.

The costs of the project amount to €13 million, of which the EU will contribute the lion’s share. It is a big promise indeed: the project is to open the door to a new market, potentially worth tens of billions of euros.

Optical chips, chips that work with light signals instead of electronic signals, are in great demand to process the ever-growing Internet traffic flows, but also have the potential to impact many other application areas.

The increasingly larger data flows in computers and in processors with dozens of arithmetic cores require optical components as well. Whereas the voluminous internet traffic is already running via light signals, in glass fibers, in these processing nodes the signal processing still takes place electronically.

Those nodes are reaching their limits presenting an opportunity for Optical switches, also known as photonic devices, to provide the solution to this problem.

The goal of PARADIGM is to explore and demonstrate a broadly applicable high-performance low-cost technology, thanks to which the performance of standardized chips will before long be able to compete with components which are currently far more expensive.

PARADIGM will also tackle the ‘packaging’ of

the optical chips, facilitating connection with one or more glass fibers. Today that packaging is as expensive as the chips themselves, so it must also become cheaper. PARADIGM technology will enhance the economic viability of these standardized chips still further, so that this technology will become the dominant one for optical chips.

In the PARADIGM project (Photonic Advanced Research and Development for Integrated Generic Manufacturing) sixteen parties have joined forces, including leading European enterprises, universities and knowledge institutes.

These include Oclaro, Alcatel-Thales III-V Lab, two Fraunhofer Institutes (HHI and IZM), Philips Miplaza, CIP, Gooch&Housego, Linkra, Willow Photonics, the universities of Cambridge, Chalmers, Milano and Eindhoven, and three design software companies: Phoenix, Photon Design and Filarete. The COBRA Institute of Eindhoven University of Technology is the project coordinator.

At present the toughest bottleneck for large-scale application of optical chips is the price level for the development and manufacture. It is high in comparison with commonplace electronic chips. Professor of Optical Communication Technology, Meint Smit, at the department of Electrical Engineering, commented that “Microelectronics cost a few cents per square millimeter of chip, as the technology is mature and highly standardized.

In addition, its development costs are low because we have sophisticated software for the fast and accurate design of the chips. We should also like to attain a similar cost reduction with photonic devices.” It is particularly products that are not currently made in large volumes which the project aims to make more than ten times cheaper, as a result of standardization of the design methods and the production techniques involved.

Moreover, companies will be able to make prototypes and put products on the market much faster. Smit expects that within six years a large portion of all optical chips can be made in this standardized manner.

Tens of billions Cheaper production methods will also make new products viable. An example is the fiber sensor, which can be used to measure all sorts of things, such as tensions in bridges, airplanes or



windmill blades, and can give off timely warnings against overload. As the technology currently stands, the most expensive item is the optical readout unit, the price of which is expected to drop considerably through integration.

Researchers also envisage other applications in medical instruments and in computers. All in all this is a market that may ultimately achieve ten percent of the scope of the microelectronics market, as professor Meint Smit estimates. This implies revenues of billions of euros. Smit believes that the technology being developed in PARADIGM will be commercially available by 2016.

In this novel approach towards standardized development and manufacturing of optical chips, Europe has a technological edge on the rest of the world, according to Smit, and the new project must strengthen this position.

This edge is the result of current European projects for the standardization of optical integration technology. In total there are projects running in Europe now amounting to over €50 million, most of which revolve around two technologies (Indium Phosphide and Silicon technology) which jointly cover a large part of existing as well as future applications.

Oxford Instruments-TDI Acquires Intellectual Property rights from Fox Group Oxford Instruments-TDI, a world leader in the development of Hydride Vapour Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors such as GaN, AlN, AlGaN, InN, InGaN, has just entered into a licensing agreement with The Fox Group.

This agreement is for the acquisition of certain intellectual property, allowing Oxford Instruments-TDI to offer hardware and processes for the production of light emitting devices (LEDs) and p doped layers, in addition to the hardware and process already offered for the growth of III-Nitride materials.

Comments Frazer Anderson, Business Development Director at Oxford Instruments-TDI, “This Agreement allows for an expansion of the existing processes and materials structures we can offer, especially to our R&D customers, in the field of light emitting structures. Using TDI’s HVPE technology, Oxford Instruments can produce templates for applications such as High Brightness Light Emitting Diodes (HBLEDs), Laser Diodes, High Electron Mobility Transistors (HEMT), and the acquisition of this IP will help us to extend our offering.”

Fox Group’s President, Barney O’Meara, said “We are pleased TDI have chosen to license Fox Group’s IP. They have long been one of the leading companies in HVPE processes and materials, with expertise all the way from fundamental science to implemented processes and products. Coupled with Oxford Instruments’ proven track record in semiconductor equipment, we look forward to Fox Group’s IP helping TDI become a major contributor to evolving greentech-cleantech solutions in solid state lighting and efficient power conditioning.”

This acquisition will facilitate further the development of Oxford Instruments’ world recognised scientific expertise, coupled with its commitment to innovation and creating world class products

NCU Patents Technology on GaN on Si-based Computer Chips The new technology is expected to revolutionize the global energy and communications infrastructure and create U.S. jobs in the process. Researchers from North Carolina State University have developed and patented technology that they say for the first time integrates gallium nitride (GaN) sensors and devices directly into silicon-based computer chips. “This enables the development of high-power – high-voltage and high-current – devices that are critical for the development of energy distribution devices, such as smart grid technology and high-frequency military communications,” says Jay



Narayan, the John C. Fan Distinguished Chair Professor of Materials Science and Engineering and co-holder of the patent. “GaN can handle more power than conventional transistors. And it can do so faster, because it can be made into single crystals that are integrated into a silicon chip – so electrons can move more quickly,” Narayan says. “This integration of GaN on the silicon platform without any buffer layers has enabled the creation of multifunctional smart sensors, high-electron mobility transistors, high-power devices, and high-voltage switches for smart grids which impact our energy and environmental future,” Narayan explains. Integrating GaN into silicon chips also makes a broader range of radio frequencies available, which will enable the development of advanced communication technologies. “These devices stand to meet the challenges of high-power, high-frequency and high bandwidth needs for advanced consumer applications and military satellite communications,” Narayan continues. “The United States still leads the world in innovation,” Narayan says. “But with the advent of the internet and instant communication, just doing innovative research isn’t enough anymore. We have to take steps to ensure that our advantage in innovation can be translated into products that create jobs here at home.” “Direct integration of devices based on different types of semiconductors onto silicon chips is of considerable interest because it can enable different functionalities, such as lasers or higher performance transistors,” says Pradeep Fulay of the National Science Foundation (NSF), which funded the GaN research at NC State. “Professor Narayan has used a special process that allows integration of semiconducting materials like GaN on the silicon so as to create hybrid type computer chips. This research will likely lead to transistors with far superior power and performance sought for many commercial and military communication applications,” he concludes. The research that led to the GaN breakthrough was done by Narayan and former NC State Ph.D.

student Thomas Rawdanowicz and published in Applied Physics Letters and U.S. Patent No. 7,803,717, granted Sept. 28. NSF is currently funding additional research in this area by Narayan. A U.S.-based corporation is already in the process of licensing the technology.

Kyma Acquires Select Assets and IP Rights from Fox Group Kyma Technologies, Inc., a supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is pleased to announce that Kyma has acquired from The Fox Group certain assets and intellectual property rights.

The Fox Group is a privately-held US corporation with a portfolio of proprietary intellectual property (IP) relating to growth of compound semiconductor crystals and crystal layers. Kyma and Fox have been in discussions over such a possible deal for the past two years.

The assets and IP rights acquired by Kyma pertain to nitride semiconductor hydride vapor phase epitaxy (HVPE) and light emitting semiconductor materials and devices.

Kyma expects the acquired resources to accelerate Kyma’s advances in materials and processes, in both contract R&D and product development.

“Working with Fox CEO Barney O’Meara on this has been a great experience,” stated Kyma president and CEO Dr. Keith Evans. “We believe this deal adds significantly to our ability to improve certain products and to develop new products which will become important for several electronic and optoelectronic device applications.”

“Fox engineers were able to produce certain (Al,Ga)N structures and certain p and n doped layers that are of immediate interest to both our current HVPE products and our new product development plans,” added Dr. Edward Preble, Kyma CTO and Vice President of Business Development.

“Fox Group is very pleased that our key equipment,


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patent rights, and know-how have been acquired by Kyma, a world leader in the compound semiconductor materials that enable the next generation of energy-saving and environmentally-friendly products,” said Barney O’Meara, President & CEO of The Fox Group. “Kyma has solid expertise and deep experience in HVPE processes, and these added assets should have a multiplier effect, to help accelerate Kyma to the next level.”

Details of the transaction are confidential.

About The Fox Group: Founded in 1999, The Fox Group is a privately-held US corporation with a portfolio of proprietary intellectual property (IP) relating to growth of compound semiconductor crystals and crystal layers. The Fox Group’s IP includes both patents and know-how owned by The Fox Group, plus patents rights and know-how licensed exclusively to The Fox Group.

After proving these technologies in the areas of silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), and the Hydride Vapor Phase Epitaxy (HVPE) method of making both blue and ultraviolet (UV) light emitting diodes, The Fox Group is now licensing rights to other companies.

For more information about The Fox Group visit their website at www.thefoxgroupinc.com.

About Kyma Technologies: Kyma is a leading supplier of crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials for a broad range of high performance nitride semiconductor device applications.

The market for nitride semiconductor devices is expected to surpass $30B over the next decade. The combined addressable market for GaN and AlN substrates is expected to surpass $500M in 2010.

Industry news Equipment and materials

Oxford Instruments Appoints Dedicated Training Officer The Plasma Technology division, which provides process solutions for epitaxial growth of compound semiconductor materials, has appointed Nick Curtis to ensure that customers will gain an insight into its full range of systems in order to maximize their performance and process capabilities. As part of the company’s ongoing commitment to its customers, Oxford Instruments Plasma Technology has expanded its system maintenance and process training offering, with a new program. The firm is employing a dedicated Training Officer, Nick Curtis, whose remit is to ensure that customers will gain an insight into the full range of Oxford Instruments’ etch, deposition and growth systems in order to maximize their performance and process capabilities. Curtis joins Oxford Instruments with many years experience in customer and in-house training for a large technical company, and is ideally suited to developing the training programs at OIPT. “We build long term relationships with our customers based on trust and respect, and want to ensure that they capitalise on the capabilities of their ‘Oxford’ systems”, says Mark Vosloo, Sales and Customer Support Director at Oxford Instruments Plasma Technology, “Working with Oxford Instruments’ trained System Technicians & Engineers, customers learn how to optimize the performance of their system. In addition our Applications Team and Development Scientists conduct Process Training courses in our extensive UK applications laboratories, tailored to individual customer requirements.” Recent courses have resulted in numerous satisfied customers: “All our questions were answered and I have to say that I was very content with the

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course”, commented Matthias Edler, University of Leoben; “You supplied good, solid, thought-provoking information,” said Hilary Tanner, L-3 Communications EOS. Michael Hume, University of Alberta, Canada was equally pleased with his course, “I enjoyed the course and learned a lot about Ion Sources. The knowledge gained about sources should prove extremely valuable.” Oxford Instruments offers a program of System User and Maintenance Training Courses to help train customers’ staff at its factory near Bristol, UK, in addition to on-site customer training. Courses are available for the FlexALâ & OpALâ ALD systems, the full range of Plasmalabâ plasma etch and deposition systems, and Ionfabâ ion beam systems. The aim of the courses is to ensure optimized system operation, increased productivity, and consequently to reduce down time to a minimum and reduce service costs, while reinforcing long term relationships with customers based on trust and respect. Oxford Instruments Plasma Technology offers flexible, configurable process tools and leading-edge processes for the precise, controllable and repeatable engineering of micro- and nano-structures. Its systems provide process solutions for nanometer layer epitaxial growth of compound semiconductor material, etching of nanometer sized features and the controlled growth of nanostructures. These solutions are based on core technologies in plasma-enhanced deposition and etch, ion-beam deposition and etch, atomic layer deposition and hydride vapor phase epitaxy. Products range from compact stand-alone systems for R&D, through batch tools and up to clustered cassette-to-cassette platforms for high-throughput production processing. Oxford Instruments provides high technology tools and systems for industrial and research markets to analyze and manipulate matter at the smallest scale. This involves the combination of core technologies in areas such as low temperature and high magnetic field environments, Nuclear Magnetic Resonance, X-ray electron and optical based metrology, and advanced growth, deposition and etching. The first technology business to be spun out from

Oxford University over fifty years ago, Oxford Instruments is now a global company with over 1,300 staff worldwide and a listing on the London Stock Exchange (OXIG).

LayTec and Partners Awarded €20 M for Creating Jobs The German “Science Creates Jobs 2010” award has been awarded to LayTec, Otto-von-Guericke University of Magdeburg and Ferdinand-Braun-Institute, Berlin. LayTec and its Geman research partners Otto-von-Guericke University of Magdeburg and Ferdinand-Braun-Institute (Berlin) have won Germany‘s renowned award “Science Creates Jobs 2010” that honors the most successful technology transfer from academia to small & medium-sized enterprises. The €20,000 prize was nominated for the third time by the Technical University of Chemitz and Deutsche Postbank AG under the patronage of the German Federal Minister of Economics and Technology. Of the 35 German applicants, the LayTec‘s EpiCurveTT development project was recognized by the jury as the most relevant technological breakthrough and as an economic success. In 2005, in a prototype tool developed by Alois Krost and co-workers at the University of Magdeburg, LayTec recognized a method having the potential to revolutionize the production of light emitting diodes (LEDs). LayTec‘s president and founder Thomas Zettler remembers, “Despite some skepticism in the LED industry at that time, we further developed the method of in-situ wafer curvature measurement to make it suitable for industrial applications. Just 2 years later, in cooperation with the Ferdinand-Braun-Institute, we successfully conducted field tests to adapt our new in-situ metrology system to industrial requirements. Since its market launch, EpiCurveTT generated revenues of more than €10 million. The number of jobs at LayTec has increased from



20 in 2005 to more than 60 in 2010. The firm’s research partners benefit from the development too. Thanks to a patent license agreement, the University of Magdeburg annually gains 2.5% of all EpiCurveTT sales. At the award ceremony, the jury member Urs Fueglistaller, Director of the Swiss Research Institute of Small Business and Entrepreneurship in St.Gallen, commented, “In particular, the jury was convinced by the fact that the partners were not discouraged by the initial skepticism of the LED industry and continued intensive and goal-oriented development of the sensor that fulfills industrial demands and meets numerous challenges occurring during the growth of compound semiconductors.” In a few years, thanks to their energy efficiency, LEDs will completely replace the now still modern low energy light bulbs. The brilliant picture quality of the newest LED backlight flat-panel displays is based on LEDs, too. Lytec says the EpiCurveTT helps to produce affordable bright LEDs with a precise color spectrum. LayTec is a worldwide operating enterprise and the market-leading supplier of process integrated metrology. Its products are used in the compound semiconductor industry, in the photovoltaics industry and for R&D applications related to advanced nano-scale thin-film processes.

SPTS Celebrates First Year Anniversary While Opening New Facility The company has tripled revenues since its formation a year ago and is opening a new office in San Jose to serve its Thermal Products Division. SPP Process Technology Systems (SPTS), a subsidiary of Sumitomo Precision Products, celebrates one year since it began operations in November 2009, while opening its new San Jose office. The new facility serves as home to SPTS’ Thermal Products Division and North American sales and support headquarters.

Following the acquisition of Aviza Technology assets by Sumitomo Precision Products (SPP) and subsequent integration with Surface Technology Systems (STS) into SPTS, the company has grown 50 % faster than the estimated 130 % growth of the global wafer fabrication equipment segment during the past year. The company’s Single Wafer and Thermal Products divisions derive approximately 80 %of current business from four major market segments: advanced packaging including through-silicon via (TSV) and wafer level packaging, compound semiconductor including high speed electronics and light-emitting diodes (LEDs), power semiconductors, and micro electro mechanical systems (MEMS). “2010 has been a very good year for us,” said William Johnson, president and CEO of SPTS. “With less than two months left in 2010, we are on course to triple our revenue compared to the combined pre-acquisition entities in 2009. To attain this growth in 12 months while simultaneously completing the company and product integration is a tremendous achievement, and a testament to the hard work of our employees, plus the strong support of our global customers.” A new record of more than 40 new customer or technology wins in 2010 is a highlight of the company’s rapid growth. “I am proud that our team has created such an amazing growth story in 12 short months,” commented Susumu Kaminaga, chairman of SPTS, and president of SPP. “SPTS grew one-and-a-half times faster than the next vendor in our peer group, and I am deeply proud to witness this success, while seeing new penetrations in our chosen market segments.” Building on current growth momentum, SPTS looks to future technology investments by committing to joint ventures (JV) and technology partnerships. In August 2010, the company announced a $5.2 million dollar investment, and a joint venture with BluGlass. BluGlass is an Australian green technology company whose Remote Plasma Chemical Vapour Deposition (RPCVD) process for depositing gallium nitride (GaN) and indium gallium nitride (InGaN) may potentially be a breakthrough in the production of higher efficiency LEDs.

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In addition, SPTS and CEA-Leti announced an agreement to develop advanced 300mm (TSV) 3D-IC processes at CEA-Leti’s 300mm facilities in Grenoble, France. SPTS, an early proponent and market leader in TSV equipment development will contribute process expertise in etch and deposition technologies, teaming this with Leti’s device know-how to optimise an integrated process flow. With a surge in all served market segments, SPTS expects its order intake to remain strong through the remainder of 2010 and into 2011. SPP Process Technology Systems was established in October 2009 and designs, manufactures, sells, and supports advanced semiconductor capital equipment and process technologies for the global semiconductor industry and related markets. These products are used in a variety of market segments, including R&D, data storage, MEMS and nanotechnology, advanced 3-D packaging, LEDs, and power integrated circuits for communications.

Veeco & NAMBE Award Boston University Professor for MBE Innovation Professor Moustakas was awarded for his pioneering contributions in the development of MBE growth of nitride materials and the development of nitride optoelectronic devices prepared by MBE. The 2010 ‘MBE Innovator Award’, co-sponsored by Veeco Instruments and the North America MBE organization, has been awarded to Professor Theodore Moustakas of the Electrical and Computer Engineering Department at Boston University. Moustakas was presented with the award at this year’s NAMBE Conference that took place in Breckenridge, Colorado on September 28. The North America MBE (NAMBE) organization selected Professor Moustakas for his pioneering contributions in the development of MBE growth of nitride materials and the development of nitride optoelectronic devices prepared by MBE. Particular contributions include the use of MBE for the

synthesis and device fabrication of LEDs, laser diodes, photodetectors, and optical modulators operating in the visible and ultraviolet range. He is the co-editor of eight books, has authored 300 papers, and has been granted 25 U.S. Patents, with several more pending. Intellectual property transpiring from his work has been licensed to a number of companies, including major manufacturers of blue LEDs and lasers. “Veeco congratulates Prof. Moustakas on his great, long-standing success in the field of MBE and furthermore, we reiterate our sincere appreciation to all innovative contributors in MBE,” said Jim Northup, GM/VP, Veeco St. Paul Operations. “We support this award as a key driver in the continuing expansion of MBE technology into eligible markets.” The MBE Innovator Award, initiated eight years ago, recognizes those individuals whose innovations have significantly advanced the field MBE in the following categories: 1) materials research, 2) device development, 3) device commercialization, or 4) equipment development. The award consists of a $3,000 honorarium and plaque. Members of the NAMBE organization help advance MBE technology by sharing research discoveries on new materials and devices based upon MBE, as well as by supporting MBE as a high-volume manufacturing technology.

LayTec ranks again among Germany’s 50 fastest growing technology companies At the Deloitte‘s Technology Fast 50 award ceremony in Berlin on October 20, 2010 LayTec was awarded for the second time in a row as one of the 50 fastest growing technology companies in Germany.

The nomination is based on the total growth in sales within the last 5 years. Between 2005 and 2009 LayTec increased its turnover by 241% and, therefore, also belongs to the 500 fastest growing technology companies in Europe in 2010.



LayTec‘s president and founder Dr. Thomas Zettler regards the nomination as a recognition of a successful technology transfer from research to industry, “Among other factors, LayTec‘s continuous growth has been possible thanks to its position at the interface between research and industry. Our R&D department closely collaborates with research institutions in Germany and abroad, and our efficient company structure makes it possible to launch the latest product developments on the global market within a very short period of time.“

Founded in October 1999 as a spin-off of the Technical University Berlin, LayTec quickly became a market leader in compound semiconductor process metrology, especially for LED production. Since 2009, LayTec‘s integrated metrology solutions have been also applied in solar cell production as well as other large area deposition processes. You will find the complete ranking list on the Deloitte’s homepage: www.deloitte.com/view/de_DE/de/branchen/technology-media telecommunications/technologyfast50

Hangzhou Silan Azure Places Multiple Order for Veeco’s K465i The TurboDisc K465i MOCVD systems will be used to keep up with the rising demand for HB-LED chips. Veeco Instruments has announced that Hangzhou Silan Azure, one of the largest LED manufacturers in China, has placed a multi-tool order for Veeco’s TurboDisc K465i Metal Organic Chemical Vapor Deposition (MOCVD) Systems. The equipment will be placed at Silan Azure’s facility in Hangzhou for its high brightness light emitting diode (HB-LED) manufacturing ramp. Zhongyong Jiang, President of Silan Azure, commented “We started the cooperation with Veeco by selecting the K465i MOCVD systems because we heard very positive feedback from the industry on the excellent system design and good performance in the field. We believe Veeco’s systems will be another good choice for high volume production of LEDs. Given the increased demand for LEDs in such applications as general

illumination, TV backlight and outdoor displays, we intend to ramp our production quickly with the cooperation of business partners like Veeco.” Bill Miller, Ph.D., Executive VP, Compound Semiconductor and head of Veeco’s MOCVD Operations commented, “We are gratified that we have the opportunity to supply Silan Azure, one of the largest LED companies in China. We believe that the China market will drive significant advancement of the LED industry and Veeco, as the market-leading equipment provider in China, is well positioned to benefit from this growth.” Hangzhou Silan Azure Co. Ltd. is one of the largest LED manufacturers in China. The firm designs, develops, manufactures and distributes HB-LEDs, epitaxial wafers and chips. The company is headquartered in Hangzhou, PRC. Veeco makes equipment to develop and manufacture LEDs, solar panels, hard disk drives, and other devices. We support our customers through product development, manufacturing, sales and service sites in the U.S., Korea, Taiwan, China, Singapore, Japan, Europe and other locations.

FOREPI Orders its First Aixtron G5 system for Blue LEDs The reactor will join FOREPI’s multiple high throughput Planetary Reactor systems at the manufacturing facility in Lung-Tan, Taoyuan, Taiwan. Aixtron has announced that in the second quarter of 2010, Formosa Epitaxy (FOREPI, placed an order for a 56x2-inch AIX G5 HT MOCVD reactor which will be used for ultra-high brightness (UHB) GaN-based LEDs. Planning to be shipped in the fourth quarter of 2010 it will join FOREPI’s multiple high throughput Planetary Reactor systems at the company’s state-of-the-art facility in Lung-Tan, Taoyuan, Taiwan. FOREPI President Fen-Ren Chien commented, “This is our company’s first AIX G5 HT system, allowing us to smoothly transfer our process recipes

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to a new reactor. Once this is proven we can look forward to the purchase of more systems for production.” He continued, “The reason why the Aixtron system was chosen comes down to the all round excellent performance of our existing systems like the G4 and CRIUS. Hence we have a strong interest in acquiring Aixtron´s recently launched products – such as the G5 and the CRIUS II. Following successful recipe transfer, FOREPI will exercise all the advantages that we can get from the G5 system, having already demonstrated high quality GaN deposition at very high growth rates and high pressure above 600 mbar resulting in superior GaN/InGaN uniformities.“ The G5 provides advanced production solutions for the manufacturer, exactly meeting the demanding market requirements on performance and productivity. Special features include a new high growth rate injector, a graphite ceiling, as well as the EqiSat, enabling identical surface temperatures on all satellites/wafers, thus further improving process yield. For over ten years, FOREPI has focused on pure-play manufacture of high power InGaN LED wafers and chips and has been a long-time user of Aixtron systems for advanced high performance HB-LED product manufacture. It set its sights on meeting the needs of high end applications such as LCD TV backlighting and today’s current strong demand proved the correctness of that strategy.

Make EU participation simpler SEMI Advocates for simplifying the EU Framework Research Programme

SEMI Europe announced that it has submitted formal feedback to the Committee of the Regions (CoR) on the issue of simplifying the implementation of the EU Research Framework Programme (FP). The EC requested feedback from key stakeholders as it works to simplify the FP process. Europe has many small and medium enterprises (SMEs), typical in the semiconductor and photovoltaic equipment and material supply chain, which have limited

resources without dedicated administrative staffs to manage complex submittal processes. “SEMI members, which are 90 percent small-to-medium sized enterprises (SMEs), require less bureaucracy to apply for EU funding. We need a program where good ideas can be suggested more frequently and which allows us to work with customers who are not located in Europe,” comments Carlos Lee, director general of SEMI Europe. SEMI actively participated at a hearing on September 27 in Brussels where it advocated for a less bureaucratic approach and these FP changes:

1. Improve the process: Some of the procedural steps are too time-consuming. In addition, generic email addresses are inadequate for communication. SEMI also requests the implementation of a “single audit approach” performed by a single entity.

2. Speed up the procedure; support a two-step process: SEMI proposes a two-step process with a concise project outline and a full proposal upon positive feedback. It is not competitive to wait for more than a year to start a project which is ready to go.

3. Better pre-financing the project: Companies may need to borrow money to pre-finance their projects for six months or longer because EU money is delayed. This is an entry barrier especially for SMEs which cannot afford the very expensive machine investments needed for a project.

4. Eliminate double application: Currently, applicants may have to submit two proposals: one for the EU and another for the national authority. A central authority and a unique document would be more efficient.

5. Encourage European cross-border funding: Small Member States are compared to large Member States so they sometimes simply work with partners outside of Europe.

SEMI Europe urged the EC to rebuild the next FP to cope with future challenges, accelerated approvals, streamlined requirements, and improved cross-border funding. Cooperation with other countries outside Europe should be encouraged. Suppliers need to work with their customers who are often based out of the EU; the FP should enable them to work together.

The Framework Programme can stimulate the future of the European innovation. Early this year,


industry news ♦ Novel devices

as part of the SEMI Brussels Forum, SEMI strongly advocated on funding schemes for nanoelectronics and semiconductor R&D in Europe, “...at a global level, Europe has to facilitate the cooperation between centres of excellence located in different European Member States. This cannot be achieved without efficient European Funding for Cross-Border Cooperation.”

Industry news Novel devices

Yellow Luminescence in GaN is Down to Carbon UCSB claims that contrary to popular belief, substitutional carbon on a nitrogen site is a very deep acceptor and accounts for the yellow luminescence in GaN.

Scientists at the University of California, Santa Barbara (UCSB), have finally resolved a 30-year old mystery: why carbon, commonly believed to be a shallow acceptor in GaN, can give rise to luminescence at 2.2 eV, in the yellow region of the spectrum.

Yellow luminescence is almost universally observed in GaN, irrespective of growth technique. The first reports on the subject, dating back to the 1980s, attributed the luminescence to carbon; however, an explanation for the microscopic source of the emission never emerged.

Indeed, almost everyone in the community believed that carbon is a shallow acceptor, though it has never been observed to make GaN p-type. No plausible configuration that would lead to deep-level emission was ever proposed.

In a paper published in Applied Physics Letters [APL 97, 152108 (2010)], the group lead by Chris Van de Walle at UCSB now explains the role played by carbon. Using cutting-edge first-principles calculations, the researchers find that substitutional carbon on a nitrogen site is not a shallow acceptor

at all; it is a very deep acceptor with an ionization energy of 0.90 eV.

John Lyons, the lead researcher on the project, also calculated the optical properties of this center, finding a broad emission centered at 2.14 eV, fully consistent with the experimentally observed luminescence.

Carbon is frequently intentionally added to GaN to achieve semi-insulating layers in transistor structures; the deep-level nature of the carbon acceptor now explains why this works so well.

Van de Walle also noted, “Carbon is also almost unavoidable as an unintentional impurity, particularly in MOCVD-grown GaN. Knowing its effects on electronic and optical properties is therefore essential!” The UCSB team pointed out that carbon is not the only source of yellow luminescence. Indeed, gallium vacancies have been confirmed to produce such luminescence in numerous experiments. But yellow luminescence is also observed in samples that contain no gallium vacancies, but do contain carbon; the mechanism for this emission has now been revealed at last.

Novel devices ♦ industry news


SEMATECH Gate-Stack Symposium Discusses Progress on III-V MOSFETs Progress is being made on Ge and III-V alternative channel material devices, although this area will require more effort and more resources to demonstrate manufacturable solutions. Participants at the recent 7th Annual International Symposium on Advanced Gate Stack Technology discussed strategies for implementing advanced logic and memory technologies for sub-16 nm node and beyond process technologies. The Symposium, hosted by SEMATECH, drew more than 100 international researchers from industry and academia that shared recent discoveries and outlined new gate stack strategies for the 16 nm technology generation and beyond. “We are very pleased with the global participation in the conference, and with the outcome - in the exploration of solutions for functional stacks for future devices,” said Paul Kirsch, SEMATECH’s director of front end processes. “The Symposium’s success can be attributed to the breadth and depth of its participants and their research findings. SEMATECH will continue to work collaboratively with the industry on fundamental issues on extending CMOS logic and memory technologies,” he continued. The technologies covered included III-V high performance MOSFETs and high-k/metal gate stacks for Silicon Germanium (SiGe). Progress is being made on Ge and III-V alternative channel material devices, although there was general acknowledgement among Symposium attendees that this area will require more effort and more resources to demonstrate manufacturable solutions. Various presenters addressed the functional stack challenges for logic and memory centered on high-k metal gate for Si, SiGe as well as concerns over III-V high performance MOSFETs. Consensus of the participants is although there

are many hurdles to overcome, vertical stacking seems the most promising pathway for continued scaling. To offset the slowdown in scaling and achieve uniformity and address reliability, newer, more innovative materials and switching mechanisms of non-volatile memories need to be investigated further. Keynote presenters, from Intel’s Technology and Manufacturing Group and Macronix provided a comprehensive overview of transistor scaling options beyond the 15 nm node and the challenges of non-volatile memories including floating gate for planar and non-planar devices. High-k / metal gate process issues were discussed by Sony, Toshiba, IBM and GLOBALFOUNDRIES, highlighting issues with stack scaling. Andrew Kummel of the University of California, San Diego discussed the density-functional theory (DFT) simulations suggesting practical pathways to improve the quality of high-k oxides on both Ge and III-V interfaces. The impressive progress on Spin Torque Transfer (STTRAM) was discussed by Grandis, Everspin and the University of Virginia. Several presentations explored new or alternative materials and architectures beyond CMOS devices for 2020, including electron spin devices, graphene, and nanowire transistors. Professor Kang Wang of University of California at Los Angeles reported efficient spin injection into Ge was realized using magnesium oxide (MgO) and is being optimized for spin transfer torque. The International Symposium on Advanced Gate Stack Technology is part of the SEMATECH Knowledge Series, a set of public, single-focused industry meetings designed to increase global knowledge in key areas of semiconductor R&D.

“Templated growth” technique for fabricating nanometer-scale graphene devices Researchers at the Georgia Institute of Technology have developed a new “templated growth”


industry news ♦ Novel devices

technique for fabricating nanometer-scale graphene devices.

The method addresses what had been a significant obstacle to the use of this promising material in future generations of high-performance electronic devices.

The technique involves etching patterns into the silicon carbide surfaces on which epitaxial graphene is grown. The patterns serve as templates directing the growth of graphene structures, allowing the formation of nanoribbons of specific widths without the use of e-beams or other destructive cutting techniques. Graphene nanoribbons produced with these templates have smooth edges that avoid electron-scattering problems.

“Using this approach, we can make very narrow ribbons of interconnected graphene without the rough edges,” said Walt de Heer, a professor in the Georgia Tech School of Physics. “Anything that can be done to make small structures without having to cut them is going to be useful to the development of graphene electronics because if the edges are too rough, electrons passing through the ribbons scatter against the edges and reduce the desirable properties of graphene.”

The new technique has been used to fabricate an array of 10,000 top-gated graphene transistors on a 0.24 square centimeter chip – believed to be the largest density of graphene devices reported so far.

The research was reported Oct. 3 in the advance online edition of the journal Nature Nanotechnology. The work was supported by the National Science Foundation, the W.M. Keck Foundation and the Nanoelectronics Research Initiative Institute for Nanoelectronics Discovery and Exploration (INDEX).

In creating their graphene nanostructures, De Heer and his research team first use conventional microelectronics techniques to etch tiny “steps” – or contours – into a silicon carbide wafer. They then heat the contoured wafer to approximately 1,500 degrees Celsius, which initiates melting that polishes any rough edges left by the etching process.

They then use established techniques for growing graphene from silicon carbide by driving off the silicon atoms from the surface. Instead of producing

a consistent layer of graphene one atom thick across the surface of the wafer, however, the researchers limit the heating time so that graphene grows only on the edges of the contours.

To do this, they take advantage of the fact that graphene grows more rapidly on certain facets of the silicon carbide crystal than on others. The width of the resulting nanoribbons is proportional to the depth of the contour, providing a mechanism for precisely controlling the nanoribbons. To form complex graphene structures, multiple etching steps can be carried out to create a complex template, de Heer explained.

“By using the silicon carbide to provide the template, we can grow graphene in exactly the sizes and shapes that we want,” he said. “Cutting steps of various depths allows us to create graphene structures that are interconnected in the way we want them to be.”

In nanometer-scale graphene ribbons, quantum confinement makes the material behave as a semiconductor suitable for creation of electronic devices. But in ribbons a micron or more wide, the material acts as a conductor. Controlling the depth of the silicon carbide template allows the researchers to create these different structures simultaneously, using the same growth process.

“The same material can be either a conductor or a semiconductor depending on its shape,” noted de Heer, who is also a faculty member in Georgia Tech’s National Science Foundation-supported Materials Research Science and Engineering Center (MRSEC). “One of the major advantages of graphene electronics is to make the device leads and the semiconducting ribbons from the same material. That’s important to avoid electrical resistance that builds up at junctions between different materials.”

After formation of the nanoribbons – which can be as narrow as 40 nanometers – the researchers apply a dielectric material and metal gate to construct field-effect transistors. While successful fabrication of high-quality transistors demonstrates graphene’s viability as an electronic material, de Heer sees them as only the first step in what could be done with the material.

“When we manage to make devices well on the nanoscale, we can then move on to make much

LEDs ♦ product news


smaller and finer structures that will go beyond conventional transistors to open up the possibility for more sophisticated devices that use electrons more like light than particles,” he said. “If we can factor quantum mechanical features into electronics, that is going to open up a lot of new possibilities.”

De Heer and his research team are now working to create smaller structures, and to integrate the graphene devices with silicon. The researchers are also working to improve the field-effect transistors with thinner dielectric materials.

Ultimately, graphene may be the basis for a generation of high-performance devices that will take advantage of the material’s unique properties in applications where the higher cost can be justified. Silicon will continue to be used in applications that don’t require such high performance, de Heer said.

“This is another step showing that our method of working with epitaxial graphene on silicon carbide is the right approach and the one that will probably be used for making graphene electronics,” he added. “This is a significant new step toward electronics manufacturing with graphene.”

In addition to those already mentioned, the research has involved M. Sprinkle, M. Ruan, Y Hu, J. Hankinson, M. Rubio-Roy, B. Zhang, X. Wu and C. Berger

Product News LEDs

Osram Opto’s LEDs Used in Tchibo Sustainable Coffee Bars The ‘Dropled 100’ pendulum luminaires employ three OSLON SSL 80 LEDs and were chosen for their compact size and because they produce a lot of light within a small space.

‘insgrüne’ translated as ‘into nature’ is the name of Tchibo’s new coffee-bar concept for universities.

For the interior, designer Simon Brünner of ‘neuesLicht’ contributed matching pendulum luminaires. His ‘Dropled 100’, using Osram Opto Semiconductors’ OSLON SSL 80 LEDs, produces a light that is atmospherically pleasant. Furthermore, it is also economical and ecologically friendly thanks to the outstanding energy efficiency of the LEDs.

Image: Taken at Tchibo Coffee Shop and provided by Designer Simon Brünner

The coffee bars, to date opened at the German universities of Göttingen and Greifswald, are all-round ‘green’ in a number of different aspects: from their color design and fair-trade coffee to the sustainability of their lighting. Economical and at the same time powerful LEDs play a significant part in energy-saving lighting concepts.

The qualities of LEDs by Osram Opto’s have convinced Brünner that the 80° reflected beam


product news ♦ LEDs

angle was most suitable for use in his pendulum luminaire. Other factors in favor of OSLON SSL LED are their efficiency (83 lm/W at 3000 K), light quality, long lifespan and compact size (3x3 mm).

The decisive factor for the luminaire designer’s pendulum luminaires, though, was their compact size: these minute bundles of power produce a lot of light within a small space. Thanks to their small size and their low thermal resistance (typically 7 K/W), the LEDs can be placed very close to each other, thus producing a lot more light within small luminaire areas.

‘Dropled 100’ by ‘neuesLicht’ uses three OSLON per luminaire. In the pendulum luminaires fitted in the ‘insgrüne’ coffee bars, the LEDs are not even visible - such is the subtlety of their use.

OSLON SSL LEDs are available in a wide range of colour temperatures (2,700 – 6,500 K) and provide the right light for any mood.

‘For me, LEDs open the door to entirely new design options. Thanks to their compact size, I can approach illuminants far more creatively and realize designs that would have been hitherto unthinkable’ explains Simon Brünner, a luminaire designer with his own label and his own production of luminaires in Germany.

In the technical realization of the luminaire, Simon Brünner was supported by the Osram ‘LED light for you’ partner Elec-Con technology GmbH located in Passau. Elec-Con is one of the new system integrators at ‘LED light for you’ and as such supervises the professional coordination within such projects as well as between light planners and designers.

The ‘LED light for you’ network initiated by Osram cooperates with customers on the realization of new solutions using efficient and versatile light-emitting diodes. Image: Tchibo, Simon Brünner

In two ‘insgrüne’ branches to date, energy-efficient luminaires designed by Simon Brünner and fitted with LEDs by OSRAM Opto Semiconductors complement the sustainable concept of these university coffee bars.

OSRAM is part of the Industry sector of Siemens and one of the two leading lighting manufacturers in the world. Its subsidiary, Osram Opto Semiconductors GmbH in Regensburg

(Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications.

Osram Opto Semiconductors has production sites in Regensburg (Germany) and Penang (Malaysia). Its headquarters for North America is in Sunnyvale (USA), and for Asia in Hong Kong.

Osram TOPLEDs Encourage High Growth Yields in Plants The firm’s TOPLED LEDs used for horticultural lighting excite plant growth and save up to 60% in energy costs. In Honkajoki, Finland, millions of pieces of OSRAM Opto Semiconductor’s TOPLED LEDs are used in horticultural lighting system by Netled Oy. They are designed and installed in a curtain structure of 10 strips that measure 25 meter in length each, replacing HPS lamps that are traditionally deployed in greenhouses. By creating the right wavelengths and intensity, these lighting installations are expected to achieve up to 60% energy savings.

High Pressure Sodium (HPS) lamps are widely used in horticulture to create the right environment for plants to grow in the dark season. A typical one hectare greenhouse using HPS lamps will consume around 10,000 Mega Watt Hour of electricity per year. “Based on some researches, we found that only 7% of the light created by HPS lamps is absorbed



by the plants. Much of the energy is wasted by inefficiencies. By converting into LED lighting, energy saving can be achieved immediately. In the case of lettuce grown in a greenhouse, energy consumption can even be reduced by 20% to 30%,” said Niko Kivioja of Netled Oy. Furthermore, the curtain structure (patent pending) exciting plants growth with less energy consumed will also reduce the “light pollution” in the skyline, which is an issue in high density population areas around the northern territories and Asia. In addition, certain wavelengths and color temperature can make the fruit amount, weight or biomass grow faster based on the recent studies. By using more predefined light for example in tomato growing the joules spent per kilogram of vegetables is reduced. With cucumbers the yield can be increased by more than 20%, the vegetable quality is improved, and the production season will be lengthened. “The electricity price, climbing more than 15% in Finland per year, will place the food industry into enormous reformation in years to come,” said Niko Kivioja of Netled Oy. ”Netled is contributing for the change by providing affordable solution to decrease the lighting expenses of the horticultural production.” Greenhouse cultivation is becoming more important. Profitable and high demand plants have become more and more cultivated through greenhouse farming. The total area of greenhouses in Scandinavia is 1,400 ha, less than the 2,000 ha in Canada and 2,100 ha in Japan. Furthermore, there is a huge market potential for LED lighting in the Nordic countries, central Europe, and in Canada due to a significant period of darkness. “The LED installation in Honkajoki has important implications for greenhouse farming in Scandinavia,” said Kai-Chung Cheng, Marketing Director of Osram Opto Semiconductors Asia. “It also proves that the features of LED such as small form factor, high efficiency and long life span provide flexibility for lighting designers to make their ideas into reality.” The project is initiated by Netled Oy on research and promotion, and Amity on design and development, while the lighting system is

manufactured by BCM in Malaysia.

OMS Luminaires Employ Osram Dragon LEDs The firm’s Startrack luminaire is equipped with 8 Golden Dragon Plus LEDs and is ideally suited to retail stores, museums, exhibitions and trade fairs. The right lighting in stores has a very significant effect on how shoppers perceive merchandise and its attractiveness. Also exhibits in museums and galleries and at trade fairs only really show themselves to advantage when they are staged with the right lighting. OMS has released a new luminaire for use in the retail sector called Startrack. It is equipped with eight of Osram Opto Semiconductors’ high-performance Golden Dragon Plus LED. These LEDs have impressive specifications and are small. In retail outlets as well as numerous other sectors, they enable merchandise and exhibits to be viewed in the right light.

The Startrack luminaire uses the Golden Dragon LED in various white tones. The light color can thus be selected easily depending on the type of



product or exhibit. With its small dimensions, the Golden Dragon Plus can be easily incorporated in the luminaire and offers luminaire designers a great deal of flexibility and creative scope. The long lifetime of the LEDs (over 50,000 hours depending on operating conditions) and superior efficiency ensure prolonged usage and therefore a reduced payback period. The Startrack has been designed to be incorporated in existing aluminium rails and is suitable in principle for virtually any store lighting application. It can be individually adjusted so the light direction can be flexibly modified. Eight Golden Dragon LEDs per luminaire (10W input) replace one 75W halogen lamp. As LEDs do not emit heat generated by light, no harm can be done to sensitive products such as food or valuable exhibits.

“For luminaire producers like us, LEDs are a technology we really want to shape. Today we’re already certain that LEDs are fundamentally changing luminaire design and enabling new forms such as integration in ceilings and furniture,” explains Martin Bílek at OMS. Osram is part of the Industry sector of Siemens and one of the two leading lighting manufacturers in the world. Its subsidiary, Osram Opto Semiconductors GmbH in Regensburg (Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications.

Ultratech Announces Opening of Singapore International Operations Ultratech, a supplier of lithography and laser-processing systems used to manufacture semiconductor devices and high-brightness LEDs (HB-LEDs), today announced the opening of its Singapore international headquarters.

To better serve its large customer base in Asia, the Ultratech Singapore operations will include engineering and manufacturing for its lithography systems and other related products. These products include lithography steppers for advanced packaging and HB-LEDs, and modules for the laser spike anneal systems (LSA). Ultratech’s international sales and service operations will also be headquartered in the Singapore facility. The company’s laser processing systems will continue to be manufactured at its facility in San Jose, Calif. The grand opening event for the Singapore operations was held on December 6, 2010 with manufacturing of lithography systems from the Singapore facility planned to begin in late 2010 with the first tool shipments to customers scheduled for the first quarter of 2011.

Ultratech Chairman and CEO Arthur W. Zafiropoulo said, “Our corporate objective has been, and continues to be, to provide our customers with leading-edge technology at the lowest cost-of-ownership for high-volume manufacturing. We are continuously looking for ways to provide our customers with even better service and more cost-effective solutions. With many of our customers located in the Pacific Rim, we are pleased to announce the opening of our Singapore international operations headquarters to further our objective. The new Singapore facility will help Ultratech achieve our commitment to meet our international customers’ needs with advanced technology and state-of-the-art manufacturing solutions.”



Cyberbond Introduces LED UV Adhesive-Curing System The company says its Linop U 400 is the world’s most advanced LED UV adhesive-curing system. Cyberbond, has announced the official US release of its Linop U 400 LED UV curing system. Cyberbond, a leading domestic manufacturer of UV-curable and other industrial adhesives, has designed the system to offer users of UV-curables significant cost savings that result from greatly increased bulb life. The system also offers a fully ergonomic user experience, as well as vastly enhanced flexibility over existing UV curing systems. “UV-curable adhesives are a next-generation adhesive technology,” said Cyberbond Executive VP Joe Silvestro. “Because they only cure when exposed to specific wavelengths of light, they allow users unprecedented control over their bonding applications. We wanted to pair this adhesive technology with an equally advanced curing system, and we’re very excited about the advantages the Linop U 400 will offer our customers.” Dieter Rademacher, Cyberbond’s Director of Product Development, elaborated, “The Linop U 400 produces its illumination with LED bulbs that last ten times longer than the traditional incandescent bulbs currently in the market. We’re pleased to say this will potentially save customers thousands of dollars or more in replacement bulb and energy costs.” “Additionally, the advanced LED design allows unprecedented flexibility in bulb placement, and provides a cool cure so the lamp may be moved as close to the substrate as possible. Finally, we’re very proud of the design of the control unit itself, which, although it is fully compatible with automated assembly systems, is also very easy to use and program manually,” he concluded. The Linop U 400 is now available for immediate sale in the US, to customers interested in taking the next step in the evolution of adhesive technology. Cyberbond also announced a correction to its press release of November 10, 2010, in

which it stated it was the world’s first ISO 13485:2003-certifiedadhesive manufacturer. Cyberbond cannot conclusively assert that it is the first adhesive manufacturer in the world to have achieved the 13485:2003 certification, although it is very proud to be a member of the select group of companies certified. Founded in 1997 in Batavia, IL, Cyberbond designs and manufactures a full line of the world’s best industrial adhesives—including cyanoacrylates, UV-curables, anaerobics, epoxies and acrylics—and specializes in custom formulations and innovations. Cyberbond also produces the world’s most advanced adhesive equipment, its Linop line of adhesive and light dispensers.

Intematix Has World’s “Broadest LED Phosphor Portfolio” The firm has introduced new phosphors to its range; these are green aluminate and red nitride materials that enable high-quality white illumination. Intematix, an innovator of patented phosphors for high-quality and high-performance LED applications, has introduced two new phosphor families to its product line. The firm says it now has the broadest portfolio of LED phosphors in the market worldwide. The new phosphors are green aluminate and red nitride materials that enable high-quality white illumination when applied to blue LEDs. “We are proud to introduce the green aluminate and red nitride families to our wide-ranging phosphor product line,” said Mark Swoboda, CEO of Intematix. “These latest innovations from Intematix enable the widest color gamut for TVs and displays, as well as the perfect warm light for your home.” The new phosphor families meet the challenging material requirements for display backlighting and general lighting applications by offering an improved color spectrum and superior color rendering to LED lamps compared to the current solutions. Both phosphor families advance the performance of



today’s lighting systems, improving color quality, thermal stability and lifetime reliability. Intematix applied its proprietary accelerated materials discovery and development process, C-MAT Synthesis, to develop the green aluminate and red nitride phosphors. By testing millions of combinations at once, Intematix develops ideal materials for LED performance with optimized particle morphology and high quantum efficiency. Intematix provides customizable, patented phosphors that serve as the foundation for high-quality, energy-efficient LED light. The firm’s products enable attractive, vivid color quality, superior consistency, uniformity and stability. Headquartered in Fremont, California, Intematix maintains R&D, manufacturing, business and support operations in the U.S., Asia and Europe.

Cree’s New Lighting-Class LEDs Shatter Industry Standards The commercially available single-die XLamp XM-L LEDs deliver 1000 lumens, at 100 lumens per watt. Cree, a market leader in LED lighting, announces the commercial availability of the industry’s brightest, highest performance lighting-class LEDs. With breakthrough light output and efficacy, Cree XLamp XM-L LEDs are designed for very high-lumen applications, such as high-bay or roadway lighting. The XLamp XM-L LED has gone from concept to commercial availability in less than eight months, demonstrating Cree’s proven commitment to developing the highest performance, most cost-effective LEDs optimized for each lighting application.

“The XLamp XM-L LED can fundamentally change the way Cree customers look at LED light,” said John Edmond, Cree director of advanced optoelectronics. “An LED with this level of light output and this level of efficacy can accelerate the development of high-output commercial lighting products and could enable applications we haven’t even thought of yet. This sets a new standard for LED performance.” Cool white (6500 K) XLamp XM-L LEDs deliver 1000 lumens with 100 lumens per watt efficacy at 3A. In a compact 5 mm x 5 mm footprint, XM-L LEDs offer the unique combination of very high efficacy at very high drive currents delivering light output and efficacy of 160 lumens per watt at 350 mA and up to 315 lumens and 150 lumens per watt at 700 mA, providing a 20 percent efficiency gain from Cree’s current industry-leading XLamp XP-G LEDs. XLamp XM-L LEDs are available in sample and production quantities with standard lead times. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications. The firm’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.

Avago Introduces Cyan 1-Watt LEDs for Traffic Signals The high-power light LEDs were showcased at Electronica 2010 and provide energy-efficient performance in a sturdy and small-footprint. Avago Technologies, a leading supplier of analog interface components for communications, industrial and consumer applications has unveiled cyan-colored high-power LEDs optimized for traffic signals, at the Electronica 2010 trade fair.



The new ASMT-JC11 and ASMT-AC00 1-Watt LEDs offer high lumens output and high energy efficiency in robust, small footprint packages that boost design flexibility. This combination of features is ideal for traffic signals, and the devices also effectively address sign backlighting and architectural, commercial and decorative lighting applications.

The new LEDs address space constraints in applications with one of the industry’s smallest footprints of 5 mm by 4 mm by 1.85 mm for the ASMT-JC11 device’s 6-leaded small outline package (SOP). Both devices can withstand maximum current of up to 500 mA to provide high flux output performance of 58 lumens at 350 mA. The high flux output results in more efficient designs that use fewer LEDs to achieve an application’s required lumens. “Our new cyan 1-Watt LEDs position Avago to address the fast-moving transition from traffic signals using incandescent bulbs to more efficient, durable signals based on high-power LEDs,” said Francis Khor, director of marketing for the Optoelectronics Product Division at Avago. “The ASMT-JC11 and ASMT-AC00 LEDs offer leading light output performance in small packages with industrial-strength reliability.” Both new LEDs feature an exposed thermal pad for efficient heat dissipation and low thermal resistance of 10° C per watt, delivering better reliability over their operating life. High maximum allowable junction temperatures of 150° C for the ASMT-JC11 device and 135° C for ASMT-AC00 device enable the LEDs to be driven in stringent operating conditions, providing flexibility and reliability to lighting designs. The devices offer a best-in-class

Electrostatic Discharge (ESD) resistance of 16 kV, making them insensitive to ESD. As a result, special ESD protection equipment is not required to handle the parts during installation, thereby reducing production costs. The LEDs have an electrically neutral heat sink pad that allows them to be configured in an array using a common metal substrate without fear of electrical shorting, thus simplifying thermal design. The ASMT-JC11 and ASMT-AC00 have viewing angles of 165 degrees and 140 degrees respectively. The ASMT-AC00 is ideal for good color and light output uniformity. Both modules have heat- resistant silicone encapsulation for improved reliability over operating life and are compatible with reflow soldering processes for lower design costs. Moisture sensitivity for the ASMT-JC11 is MSL 1 and for the ASMT-AC00 is MSL 2a. The ASMT-AC00 device available in 2-leaded package also with exposed pad design and both modules are lead-free and RoHS-compliant. Pricing for the ASMT-JC11 and ASMT-AC00 LEDs begins at under $2.00 each in 1,000 pieces. Samples and production quantities are available now through Avago’s direct sales channel and worldwide distribution partners. Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

Avago Unveils Fiber Optic Links for Harsh Temperatures The robust versatile modules are based on a high-power 650-nm LED and deliver reliable data transmission suited to many industrial applications. Avago Technologies, a leading supplier of analog interface components for communications, industrial and consumer applications, has revealed a new



line of optical fiber transmitters and receivers optimized for harsh temperature environments, at the Electronica 2010 trade fair.

The HFBR-152xETZ/252xETZ optical fiber modules provide reliable data transmissions over cost-effective plastic or silica fiber in the –40 to +85° C extended industrial temperature range. Designers can use the devices to implement system control or drives in wind turbines and solar farms, traction inverters in trains, and for other industrial applications and medical systems. An extension of the Avago Versatile Link series, the new modules eliminate the electromagnetic interference, crosstalk, and electrical ground problems that are common with copper wire solutions, while also providing easier, more flexible installation. The HFBR-152xETZ transmitters are based on a high-power, 650-nm LED that is easy to drive and modulate. The transmitters operate at speeds from 1-125 MBd over distances up to 100 meters. The HFBR-252xETZ high-bandwidth receivers contain a PIN photodiode and internal transimpedance amplifier. The modules come in plastic housing that interlock for single-channel or duplex links in a horizontal mount configuration, providing flexibility to designers during PCB layout. “The addition of these new Versatile Link series modules with extended temperature range operation is based directly on requests from our customers in the rapidly growing renewable energy

and transportation markets,” said Mickael Marie, marketing manager for industrial fiber products at Avago. “With best-in-class electromagnetic compatibility performance and ease-of-use, Avago optical fiber modules have become the de-facto industry-standard for industrial applications.”

TheHFBR-152xETZ/252xETZ is compatible with 1-mm diameter plastic optical fiber and 200 μm hard-clad silica fiber and is RoHS-compliant. Transmitter and receiver application circuit schematics and recommended board layouts are available. The HFBR-1527ETZ transmitter and HFBR-2526ETZ analog receiver are designed for transmissions from 1 to 125 MBd. The HFBR-1521ETZ transmitter and HFBR-2521ETZ digital receiver transmit from DC to 5 MBd, and the HFBR-1522ETZ transmitter and HFBR-2522ETZ digital receiver transmit from DC to 1 MBd. Pricing for the HFBR-1521ETZ transmitter begins at $5.06 each in 200 piece quantities, and the HFBR-2521ETZ receiver also begins at $5.06 each in 200 piece quantities. Samples and production quantities are available now through the Avago direct sales channel and via worldwide distribution partners. Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

Osram Unveils Compact LED for Super Flat Displays The firm’s new TOPLED Compact 4520 LED is claimed to be the first for this application to have a UX:3 chip. Super flat displays are now possible thanks to the new TOPLED Compact 4520 from Osram Opto Semiconductors. This LED is one of the smallest for screen backlighting and is the first LED for this



application to have a UX:3 chip. It is therefore ideal for pulse mode, can be loaded with a very high current and helps produce razor sharp pictures. This LED is claimed to be one of the smallest for screen backlighting and is the first LED for this application to have a UX:3 chip. It is therefore ideal for pulse mode, can be loaded with a very high current and helps produce razor sharp pictures.

The trend toward flatter and flatter displays calls for exceptionally slim backlighting systems and high quality of light. These are precisely the properties that the new TOPLED Compact 4520 has to offer. This tiny light source with a brightness of 35 lm (at 150mA) and an efficiency of 72 lm/W is suitable for single or double-sided injection of light into light guides up to 2 mm and covers a color space of more than 100% sRGB. Thanks to its UX:3 chip, which offer excellent linearity between current and brightness, it is brighter in high-current pulse mode than all the LEDs based on other chip technologies. “The TOPLED Compact 4520 has been designed specifically for super flat displays”, said Winfried Schwedler, Marketing Manager Backlighting at Osram Opto. “Its extreme brightness and high-current pulse mode help produce razor sharp high-contrast images with no wipe effects.” Pulse mode provides greater contrast on dark images by darkening or dimming individual segments of the image. It also prevents wipe effects on fast moving images. To achieve this, parts of the backlighting are briefly switched off. This takes place so quickly that the human eye cannot detect the dark phases. The overall result is a bright image with consistent color quality.

Like the other members of the TOPLED family, the TOPLED Compact 4520 is flat encapsulated and does not have a lens. It is therefore ideal for single or double-sided injecting in light guides. The tried and tested TOPLED package measures 4.5 x 2.0 x 0.8 mm. It is synonymous with reliability and can be manufactured in large volumes. Osram Opto Semiconductors in Regensburg (Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications. The company has production sites in Regensburg (Germany) and Penang (Malaysia). Its headquarters for North America is in Sunnyvale (USA), and for Asia in Hong Kong.

Osram Opto To Showcase LED Products At electronica 2010 The company will be showcasing LEDs, infrared and laser components for a wide variety of applications in the commercial, industrial and residential sectors at the conference in Germany. The versatility of light emitting diodes has already led to some impressive and memorable designs, such as the front lighting on the Audi A8.

Infrared sensors adjust the brightness of the LEDs to ambient conditions and are therefore capable of making significant energy savings.



IR components can provide breathtaking 3D effects through the interaction of a backlit LED TV and shutter glasses. Miniaturized projectors need laser or LED light sources to achieve high output and brilliant colors. Panel lights as style elements are setting new standards in room lighting. Osram Opto Semiconductors will be presenting all this and much more, providing a link between the systems that already exist today and the exciting possibilities that tomorrow will bring. The entire booth will be illuminated by 200 LED spotlights each equipped with 44 of the latest high-power LEDs in the OSLON family from Osram Opto Semiconductors. There are 22 LEDs in cold white and 22 in warm white so the lighting mood can be changed to suit particular needs. Visitors can experiment to see how the light color and brightness can be individually controlled with the aid of light emitting diodes. “The wide variety of applications from so many different walks of life clearly shows that LEDs with their numerous benefits such as energy efficiency, long life and eco-friendly design now offer excellent options in general illumination”, said Martina Opitz, Marcom Manager at Osram Opto Semiconductors, who is responsible for the innovative booth concept. This also applies to street lighting – various luminaires at the booth demonstrate the variety of designs and the high output levels that LEDs can deliver. A particular highlight here is a luminaire that uses Osram. The conference room at the booth is equipped with a wall of diffused light. The one meter by two meter plastic panels looks like a transparent glass wall when they are switched off but as soon as they are switched on around 7500 OSLON SSL 80 LEDs inject their white light into the plastic. Light is therefore more than just brightness, it is a design element. With its booth concept, Osram Opto Semiconductors is continuing its successful cooperation with the architects and designers Bachmann-Kern & Partner, who designed the booth for electronica 2008. That booth won the Gold ADAM Award in 2009.

World’s First 6-Inch Full-Field Projection Exposure System for Manufacturing LED Chips USHIO America, a provider of specialty and general illumination lighting solutions as a wholly owned subsidiary of USHIO Inc, today announced that the company has started marketing the world’s first 6-inch full-field projection exposure system for manufacturing LED chips in the US.

For manufacturing light-emitting diodes (LEDs), exposure equipment has been used to form electrodes, electrical circuitry, and a passivation layer on a sapphire wafer used as the substrate, in the same manner as for manufacturing semiconductor devices. In general, stepper systems (step & repeat projection exposure systems) or contact exposure systems used for manufacturing semiconductors have been also used for 2-inch or 4-inch sapphire wafers.

As applications of LEDs have increased, the demand has increased dramatically while the price has been lowered significantly. In order to meet the growing need, LED chip manufacturers have increased wafer sizes from 2-inch or 4-inch wafers to 6-inch wafers in order to enhance productivity and reduce manufacturing cost by increasing the number of chips produced from each wafer.

The increase in wafer size, however, has caused such problems as a warpage or distortion of wafers that cannot be eliminated by conventional stepper or contact exposure systems, thus lowering the yield due to deposition errors. In addition, these conventional exposure systems require changes in system settings and replacement of parts for wafer size conversion. This can cause additional cost and downtime, so that it has been a challenge in technology and cost to enhance productivity by increasing wafer size.

USHIO successfully developed its new exposure system — model UX4-LEDs —that allows full-field exposure of 6-inch wafers while preventing wafer warpage or distortion, achieving a throughput enhancement of 300% compared with conventional stepper systems. The UX4-LEDs exposure system is based on the same platform as USHIO’s field-proven UX series full-field projection exposure systems for semiconductors, FPDs, printed-circuit



boards and MEMS. USHIO already has installed more than 1,000 units of the UX series systems throughout the world.

“The UX4-LEDs projection exposure system is one of the most innovative items of LED manufacturing equipment today. Based on a collection of our lighting-edge technologies that USHIO has fostered in its field-proven UX exposure system series, it is the world’s first 6-inch wafer full-field projection exposure system. It will allow major LED manufacturers to dramatically increase their mass-production capacity while lowering their manufacturing cost,” said Kenji Hamashima, President/CEO of USHIO America. “We are confident of introducing this new product into the US market and gaining top market share by reinforcing our sales and technical support forces. We expect to ship the first unit within this year, since several major LED manufactures have already been evaluating this system for mass-production.”

FULL-FIELD PROJECTION EXPOSURE SYSTEM “UX4-LEDs” FOR MANUFACTURING LED CHIPS

1 Full-field Projection Exposure Up to 6-inch Wafers Requires no contact between the mask and wafer, thus avoiding potential damage to both and preventing any defect on a circuit pattern.

Requires neither mask replacement nor cleaning that would cause system downtime. Allows full-field exposure to enhance throughput (300% higher than that of conventional stepper systems)

2 High Overlay Accuracy and High Resolution

USHIO originally developed the projection lens and the alignment and wafer transfer mechanism optimized for manufacturing LEDs.

Allows enhancement of detection accuracy of alignment marks with low visibility, such as those for transparent electrodes, to achieve high overlay accuracy.

Original wafer chucking method for eliminating warpage or distortion of wafers, and a projection lens with a deep depth of focus minimize variation in line width.

3 Flexible System Design

Designed to automatically handle wafer size conversions so as to allow an increase in wafer size

without changing system settings or replacing parts, thus requiring no downtime.

Use of modular structure for major system components allows easy specification changes or upgrading as well as easy maintenance

4 High Cost-Benefit Performance

Designed specifically for LED manufacturing to greatly reduce the initial cost compared with use of a semiconductor stepper system for manufacturing LEDs.

Running cost is reduced by 80% of the conventional stepper systems to lower the cost of ownership (CoO). The footprint reduced by 50% or more from the conventional UX series to achieve 3.0 m2 or less.

New Cree XLamp LED Performance Breakthrough Cree announces the addition of 80, 85 and 90 color rendering index (CRI) options to its XLamp XP-G and XP-E warm white LEDs. Many lighting applications, such as retail, medical and architectural, require high color accuracy to properly render object colors.

With previous generation high-CRI white LEDs, increasing color quality meant decreasing efficacy. Thanks to the new high-CRI XP-G and XP-E, luminaire and fixture designers can have both.

“High CRI is a must for certain applications that require a high quality of the light—but at the same time we cannot forget about the system efficacy,” said Massimo Santinon, brand manager i-Led, Linea Light s.r.l. “The new XLamp XP-E and XP-G with high CRI are the perfect combination we were waiting for that will allow us to address new markets.”

“Lighting applications require specific performance characteristics, and Cree’s XLamp LED family delivers products optimized for these individual applications,” said Paul Thieken, Cree director of marketing, LED components. “Our high CRI XLamp LEDs can deliver light quality comparable to halogen with better efficacy than fluorescents. And



Cree’s lighting-class LEDs are proven to be one of the world’s most efficient light sources which can enable more economical designs and applications.”

The new high-CRI XP-G is available with luminous flux of up to 107 lumens at 350mA in warm white (3000K), providing efficacy of 102 lumens per Watt. Using this new XP-G, LED lamp designers can create systems that are 70 percent more efficient than a traditional halogen PAR38 lamp and deliver similar high color rendering.

High-CRI XP-G and XP-E LEDs are similar to standard XP-G and XP-E LEDs, respectively, and may work in existing systems without any redesign. Just as with the standard XP-G and XP-E, the new LEDs have LM-80 data approved by ENERGY STAR®, are UL-recognized components under UL 8750 (E326295), and feature excellent thermal management properties.

High-CRI XP-G and XP-E LEDs are available now in sample and production quantities with standard lead times. To locate a distributor, please visit www.cree.com/buyxlamp.

Korea’s Semi Materials enters LED lighting market with AIXTRON systems AIXTRON announced today a new order for MOCVD reactors from Semi Materials Co. Ltd., a company engaged in the development of photovoltaic energy technologies. The order comprises five AIX 2800G4 HT deposition systems in a 11x4-inch wafer configuration.

The Seoul, S. Korea based company placed the order during the second quarter of 2010 and following their delivery in the fourth quarter of 2010, the systems will be used to produce GaN-based UHB LEDs for lighting applications.

The new reactors will be commissioned by the local AIXTRON support team in a dedicated facility at the Semi Materials production plant in Gyeongsan.

Kun Park, CEO of Semi Materials, comments, “Our company has embarked on an exciting new venture to enter the business of developing and

manufacturing high-brightness LEDs for general lighting applications. The reactors will form a centrepiece of the new operation which we recently contracted in a US$ 450 million Memorandum of Understanding with Kyungbuk province of Korea. AIXTRON has a very strong world-wide reputation for the performance and quality not only of their engineering and processes but also their support service. We know that having AIXTRON at our side will make this major business undertaking a smooth process.”

Semi Materials was founded in 2000 and has since become a major developer and manufacturer of a wide range of photovoltaic materials and other products. The company now intends to become a world leader in the manufacture and supply of LED-based lighting materials and components.

Cree Ups Performance for XLamp XP-E and XP-C Color LEDs Cree, Inc. announces the commercial availability of new levels of performance for XLamp XP-E & XP-C Color LEDs.

XLamp XP-E Color LEDs are now available delivering minimum light output of 500 mW for Royal Blue, 39.8 lumens for Blue, 107 lumens for Green, 73.9 lumens for Red-Orange, and 62 lumens for Red, all at 350 mA.

XLamp XP-C Color LEDs are now available delivering minimum light output of 350 mW for Royal Blue, 23.5 lumens for Blue, 62 lumens for Red-Orange and 51.7 lumens for Red, all at 350 mA.

“Cree is extending our leadership with industry-best light output across the color spectrum in a common, small footprint,” said Paul Thieken, Cree director of marketing, LED components. “These economical, high-performance options can provide designers additional flexibility for a broad set of applications including architectural, emergency vehicle, transportation and decorative lighting, all while leveraging the reliability of the XP package.”

XLamp XP-E and XP-C Color LEDs are available in



sample and production quantities with standard lead times. To locate a distributor, please visit www.cree.com/buyxlamp.

OSRAM Introduces LEDs for More Efficient Luminaires The OSLON SSL 150 has a 150° beam angle and makes better use of light. LED luminaires can now be made simpler and more efficient thanks to the new 150° beam angle of the OSRAM OSLON SSL 150. Retrofit and downlight designs in particular, will benefit from the even distribution of light from the new OSLON SSL 150, which allows designers to better manage the light in external reflectors. Additionally OSLON’s small footprint can simplify the design of lamps and luminaires and facilitate low profile designs. The wide beam characteristic of this new LED enables the light to be used in reflector systems with much lower light losses which means LED lamps and luminaires designed with OSLON SSL 150 are more efficient. “With its low-profile and very compact design the new OSLON SSL 150 can be closely clustered without creating shadow effects. In reflector applications for example, the luminaire efficiency can be increased by more than 5 %. The reflectors can also be low-profile and the luminaire itself needs only a shallow mounting depth,” said Martin Wittmann, Marketing Manager Solid State Lighting at OSRAM Opto Semiconductors. “Thanks to these properties the LED offers flexible design options for high-performance lighting solutions.” The OSLON SSL 150 is also ideal for other applications such as diffused lighting in suspended ceilings and for wide-area backlighting with no obvious spots of light. Additionally, uniform illumination of the diffuser is possible in retrofits that aim to simulate incandescent or halogen light. Color mixing is also easier than ever. If OSLON SSL LEDs in different colors are used in a cluster the colors can be mixed at the reflector level. This is much less complex than mixing colors with

secondary lenses. The technical data of the new LED is also impressive. The LED is based on a 1mm² chip, providing a typical brightness of 92 lm at 3000 K at an operating current of 350 mA and 156 lm at 700 mA. It is available in all white tones (2700-6500K) and in different colors. OSLON SSL 150 is the latest addition to the OSLON SSL product family (beam angle of 80°) and fits neatly into the portfolio with its dimensions of 3 mm x 3 mm. Depending on the application and specific requirements, both versions offer tailor-made solutions with maximum system efficiency.

The tiny OSLON SSL 150 LED can be closely placed in reflector systems for very low-profile designs OSRAM is part of the Industry sector of Siemens and one of the two leading lighting manufacturers in the world. Its subsidiary, OSRAM Opto Semiconductors GmbH in Regensburg (Germany), offers its customers solutions based on semiconductor technology for lighting, sensor and visualization applications.



Future Lighting Solutions Releases Paper on Optimizing LED-Based Recessed Downlights The paper describes the rapid developments of LUXEON LEDs, simpleLED light engines & NXP drivers. A new white paper providing guidelines for developing high-performance solid state downlights is now available from Future Lighting Solutions. The paper, titled “Enabling LED-Based Recessed Downlight Applications,” describes the considerations and components for implementing LED-based downlight fixtures that meet market needs as well as ENERGY STAR requirements, including light output, efficacy and longevity benchmarks. Topics covered in the paper include component selection, how to determine the corrected drive parameters, and the role of optical, thermal and power solutions in producing reliable solid state downlighting. Examples provided utilize Philips Lumileds LUXEON Rebel LEDs, NXP dimmable IC drivers, and Future Lighting Solutions simpleLED light engines that accelerate time to market by providing LEDs, secondary optics and onboard connectors already mounted on circuit boards. The simpleLED off-the-shelf assemblies also include UL recognition that eliminates the need for a full in-system LED component investigation to obtain UL Listed status for new luminaires. The paper provides a road map for implementing a Future-developed 4” and 6” reference design for recessed downlight systems. The attention to downlight applications reflects the fact that downlighting accounts for up to one-fourth of the lighting energy used. LED-based downlights reduce energy consumption by 45% to 80% over conventional luminaires. They also significantly reduce bulb replacements costs because they have longer hours of operation compared to traditional light sources, provide a green RoHS-compliant, and enable far more flexible designs because of their

small form factor. Future Lighting Solutions is a provider of LED lighting components and support services for solid-state lighting products and installations, including engineering expertise, concept development, full system solutions and online tools that accelerate quality application development. The company is a division of Future Electronics.

Epistar Places Multi-Tool Order for Veeco MOCVD Systems Veeco Instruments Inc., announced today that Epistar Corporation, headquartered in Taiwan, placed a multi-tool order for Veeco’s TurboDisc(R) K465i(TM) gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) Systems for high volume light emitting diode (LED) production.

Dr. M.J. Jou, President of Epistar, commented, “Since we qualified Veeco’s tools for production back in May, we have been extremely satisfied with their performance. Given the systems’ ease-of-use and low cost of ownership, we now plan to include Veeco as an important supplier to Epistar.”

Bill Miller, Ph.D., Executive Vice President, Compound Semiconductor and head of Veeco’s MOCVD Operations commented, “We are excited to continue to establish this strong relationship with Epistar in 2010, and pleased to support their current and future MOCVD requirements.”

With superior wavelength uniformity and excellent run-to-run repeatability, the production-proven K465i extends Veeco’s lead in capital efficiency - the number of good wafers per day for each capital dollar - for high volume LED manufacturers. The K465i provides ease-of-tuning for fast process optimization on wafer sizes up to 8 inches and fast tool recovery time after maintenance.



Cree Introduces High-Voltage Lighting-Class LEDs With the same footprint and performance as the XLamp MX-6 and MX-3 LEDs, the MX-6S and MX-3S LEDs can be used to produce smaller more-efficient power supplies and thermal systems. Cree, a market leader in LED lighting, is extending its lighting-class high-voltage LED portfolio with the commercial availability of new XLamp MX-6S and MX-3S LEDs. With the same footprint and high-quality performance as the XLamp MX-6 and MX-3 LEDs, the MX-6S and MX-3S LEDs offer new high-voltage configurations designed for space-constrained LED lamps and bulbs. For these applications, high-voltage LEDs can be used to achieve smaller, more-efficient power supplies and thermal systems. The XLamp MX-6S LED delivers luminous flux of up to 139 lumens at 60 mA/20 V in 6000 K and 114 lumens in 3000 K. The XLamp MX-3S LED provides up to 122 lumens at 115 mA/10.7 V in 6000 K and 100 lumens in 3000 K. The MX series LEDs deliver lighting-class performance for high-voltage LEDs, including high reliability, high efficacy and industry-leading color consistency. “These new XLamp LED products can enable LED lamp manufacturers to create more-efficient and cost-effective designs in applications such as A-19-bulbs or GU10 lamps,” said Paul Thieken, Cree director of marketing, LED components. “With the addition of these products, Cree continues to deliver the industry’s highest performance, application-optimized LED components to the lighting-design community.” XLamp MX-6S and MX-3S LEDs are available now in production quantities with standard lead times. Cree is setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications. Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness

LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.

Optogan Appoints New General Manager of Global Sales & Marketing LED manufacturer Optogan has appointed Markus Zeiler, formerly at Osram, as General Manager of Global Sales & Marketing. Optogan Group, an innovative manufacturer of LEDs and luminaires is driving forward its sales activities by filling the new top management position. Markus Zeiler (36), who can provide a decade of broad experience within LED sales, marketing and engineering at a global level, will oversee the expansion of Optogan to worldwide operations. Prior to joining the Optogan team, Markus Zeiler worked at Osram for over 10 years, most recently heading the marketing team for LED consumer product business, such as LCD TV and mobile phone components. His knowledge and background will support activities to take advantage of the booming demand for LEDs for LCD backlighting. At the same time he will prepare the launch of LED lamp and luminaire sales on global level to build on the success story which Optogan is currently experiencing in Russia. “Markus is a top global professional in our industry and we are happy that he can bring his business leadership, sales know-how and marketing expertise to Optogan,” commented Maxim Odnoblyudov, CEO of Optogan Group. “With Optogan Group I found all the major business success factors combined within one LED lighting company. Leading chip technology combined with competitive pricing, speed and a very highly motivated workforce are the key reasons why I joined Optogan.” said Markus Zeiler. “Our LEDs will soon be part of LCD TVs, street lighting and indoor luminaries all over the world.”



Zeiler started his professional career at Osram Opto Semiconductors in 2000 after completing a degree in physics. His work has led him through engineering, project management, marketing and sales activities for LEDs and sensors. The applications he has experienced range from consumer, automotive and industrial up to lighting. Between 2005 and 2008 Markus Zeiler made significant contributions in business development for new LED applications within the Asian region, working with several very large consumer companies. From 2008 onwards Zeiler spent two years in Japan to establish a sales key account for a top international consumer electronics brand. In 2010 those operations were extended to a global level within his marketing function at the headquarters in Germany. LEDs in lighting applications have seen tremendous growth over the last years. Largest upcoming potential is currently LED backlighting for LCDs. The second wave of business growth will go hand in hand with the continuous rise of energy saving lighting applications for indoor and outdoor use. “We are confident that the addition of such top professionals to our team will enable us to achieve our ambitious plans on the global market,” added Alexey Kovsh, Executive VP of Optogan Group. Markus graduated from the University of Regensburg (Germany) and Reading University (UK) with degrees in Physics, specializing in Semiconductors and Crystallography. From his engineering background he is the holder of more than a dozen LED design and application patents.

Once Innovations achieves record AC LED efficacies LED lighting technology developer Once Innovations, Inc. announces it has achieved an industry high mark for luminous efficacy at the light engine level. ONCE lab testing of pre-production AC LED modules utilizing the company’s proprietary AC conditioning technology has consistently yielded luminous flux of 1080 lumens at 11.8W and correlated color temperature of 2870 K. 50mm diameter AC LED modules are designed to connect

to 120VAC, 60Hz mains without the need for additional electronics. “Our conditioned AC LED technology clearly demonstrates that AC driven LEDs can be a viable solid state lighting solution without sacrificing power quality,” stated Mr. Zdenko Grajcar, CTO of ONCE. “We not only achieved system luminous efficacy of over 90 lumens per watt, but did so with extraordinary power quality and at a fraction of the cost of similar PFC corrected DC LED solutions.” The company’s SCD conditioning boosts system luminous efficacy significantly over simple resistive circuits. Documented testing using replicable industry standard protocol has shown system efficacies of 92 lumens per watt at 2850°K, an 85 CRI, and R9 value over 30. Modules incorporating AC conditioning technology are inherently dimmable with Power Factors at 0.98 and Total Harmonic Distortion (THD) under 21%. In addition, ONCE AC LED conditioning technology makes LED modules a very robust, compact, and surprisingly affordable solution. Conditioning enables AC LED lighting to meet strict power quality standards. “We are using our proprietary AC conditioning in all ONCE products currently in development and are in the process of licensing our technologies to major lighting and LED manufacturers,” commented Mr. Craige Thompson, CLO of ONCE. “With over 30 combined U.S. and foreign patents and patent applications pending related to our AC LED portfolio, the value proposition we have created provides our licensees with opportunities to significantly decrease manufacturing cost while making major power quality improvements.” ONCE believes these developments will make low THD levels and high PF commonplace in all LED based systems.



New series RGB SPNovaLED from Dominant DOMINANT has introduced their new high intensity RGB SPNovaLED (NMRTB-WSG) of its SPNovaLED series, replacing the existing NMRTB-USD device. The utilized RGB technology of this LED also allows driving each chip in the package individually to mix and match any requested color even white; to provide balanced lighting distribution. With an operating current of 250mA this LED features a typical luminous intensity of 9000mcd for Red, 12,000mcd for True Green and 4000mcd for Blue.

This new RGB SPNovaLED offers an excellent lifetime due to its silicone encapsulation and low thermal resistance of the housing, converting it to an unimpeachable MultiLED product. In terms of the design and size of the package the dimensions are equal to the other SPNovaLEDs (6.0(L) x 6.0 (W) x 1.5(H) mm). However the viewing angle was designed to 130°to ensure superior color mixing among the colors. This LED is a true high intensity light source that leverages the benefits to a greater stability and an extended lifetime.

Based on its advantages and dynamic performance DOMINANT’s new RGB SPNovaLED is good for a variety of applications such as full color display board, signage, decorative lighting, channel light and architecture lighting, outperforming similar competition devices in almost every significant area.

Veeco Completes Sale of Metrology Business to Bruker Corporation Veeco Instruments Inc. have announced that it has completed the sale of its Metrology business to Bruker Corporation , a provider of high-performance scientific instruments and solutions for molecular and materials research, for $229.4 million in cash.

Veeco Instruments Inc. have announced that it has completed the sale of its Metrology business to Bruker Corporation , a provider of high-performance scientific instruments and solutions for molecular

and materials research, for $229.4 million in cash.The sale transfers Veeco’s worldwide Metrology business to Bruker, including Veeco’s Atomic Force Microscope (AFM) business in Santa Barbara, CA and its Optical Industrial Metrology (OIM) business in Tucson, AZ, as well as Veeco’s associated global AFM/OIM field sales and support organization. Additional terms of the transaction were not disclosed. Citigroup Global Markets Inc. acted as exclusive financial advisor to Veeco in connection with the transaction.

Synopsys` enters into Optical Design & Analysis Synopsys, Inc., a supplier of software and IP for semiconductor design, verification and manufacturing, has acquired Optical Research Associates, a privately held leading provider of optical design software and optical engineering services.

The addition of ORA’s expertise, technology and products will allow Synopsys to move into the rapidly growing markets associated with displays and solid state lighting using light emitting diodes (LEDs), as well as expand into markets such as semiconductor lithography equipment and cameras. This acquisition represents Synopsys’ initial move into this space and aligns with the company’s strategy to expand its total addressable market into areas that are naturally adjacent to traditional electronic design automation (EDA).

ORA software is used to design and optimize applications that require light to be controlled or manipulated. Its software allows engineers to design and optimize the optical components and systems found in products such as cameras, telescopes, semiconductor lithography equipment, projectors, laptop displays, automotive lighting, and solid state lighting using LEDs. Optical components can include items such as lenses, prisms and mirrors, while the systems can include any combination of components necessary to achieve the desired image or image uniformity.

The terms of the deal, which closed today, are not being disclosed. The acquisition is not expected to be material to Synopsys’ results in either fiscal 2010



or 2011.

“Optical design is a logical adjacency for Synopsys. The analysis and optimization of optical systems involves the same level of algorithmic and software engineering expertise Synopsys is known to provide,” said Howard Ko, senior vice president and general manager of Synopsys’ silicon engineering group. “Not only do our companies offer complementary technology and a shared vision, we both have cultures committed to technical excellence and leadership. We believe that together we can provide substantial value to ORA’s current customers as well as to growing and emerging markets in solid state lighting and LEDs.”

Optical Research Associates delivers innovative solutions to the optics industry. With its CODE V and LightTools software products, ORA is one of the world’s leading developers of optical design and analysis software. CODE V is used for the design and analysis of optical imaging and optical communication systems. It precisely simulates the reaction of light rays as they pass through or bounce off elements such as lenses, mirrors and prisms, and calculates image quality. The result is a product or system capable of accurately depicting objects such as a planet via a telescope. LightTools is a 3D tool focused on how best to manipulate and control light. It accurately simulates how light will be perceived in real-world environments so that engineers can design products such as automotive headlights, street lights and cell phone displays that have the desired brightness, distribution and uniformity of li

ORA’s Engineering Services group provides imaginative, cost-effective solutions across the entire spectrum of optical design, with more than 4,800 completed projects since the company was founded in 1963. Working with its software distribution partners, ORA has customers in more than 25 countries. ORA is located in Pasadena, California, Tucson, AZ and Westborough, Massachusetts.

LED Street Lights from AOP Installed in China Modular Strategy Unique; Engineering Support Provided by Future Lighting Solutions

A city street in China recently installed 144 modularized LED street lights from Taiwan’s Alliance Optotek Corporation (AOP), marking the first project using AOP’S new energy-saving ARTEMIS street light series. The lamps are built with high-power LUXEON Rebel LEDs and available in two- to five-module configurations for environments ranging from 3-meter-high park roadway lighting to 10-meter-high main road illumination. Components can be customized to meet lighting requirements in the U.S. and Europe as well as mainland China.

AOP’s modular strategy shortened development time and simplifies production and assembly, lowering product cost. LED solution specialist Future Lighting Solutions further reduced the development effort and time-to-market by supplying AOP engineers with optimized LED count, current, forward voltage and heat management information, calculated with proprietary Future software tools.

In addition to the 144-unit installation in the Chinese city of Dongguan Songshan Lake, AOP now has ARTEMIS customers for street lighting, wall wash and architectural lighting projects. The variety reflects the ability of the core 24-LED ARTEMIS module to adapt to different applications by changing the lens used.

AOP is relying on Future’s inventory management services to ensure that it has a reliable supply of LUXEON Rebel LEDs to fulfill these and other orders.

“Energy-saving initiatives like those in China are driving the adoption of LED street lighting in particular. Municipalities also reap the benefits of fewer bulb replacements and associated labor costs



related to long LED life,” said Clint Yu, Director of Sales and Marketing Division for AOP. “With our modular design and Future’s engineering and supply chain assistance, our ARTEMIS series offers pricing, performance, customization and time-to-market advantages for customers around the globe.”

“The modular approach of AOP’s ARTEMIS products will be inevitably by imitated by other LED lighting developers,” said Winter Chan, Regional Sales VP of Future Lighting Solutions. “This is another important step in the evolution of solid state lighting.”

Philips Lumileds expands white LED portfolio & increases light output Philips Lumileds have announced that it has added a new 4000K CCT ANSI binned part to its award winning LUXEON Rebel product portfolio and raised the top flux bin for its cool and neutral white LUXEON Rebel by 20%.

The new part delivers improved color rendering and tight binning to simplify luminaire designers’ engineering efforts. In addition, flux bin increases for cool and neutral white LUXEON Rebel parts to a minimum 120 lumen flux bin at 350 mA demonstrates continued flux and efficacy improvements that are part of the company’s technology development path. Coupled with the recent introduction of LUXEON Rebel ES, Philips Lumileds LEDs provide high performance options for a wide variety of applications.

“As the market for solid-state lighting solutions takes hold, feedback from lighting engineers, designers, and end-users is playing a critical role in the development of the LUXEON LED portfolio,” said Frank Harder, VP Marketing LUXEON Product Lines at Philips Lumileds. “The new 4000K CCT part addresses specific needs in the office lighting segment where light output, efficacy and quality of light must meet certain levels. And our light output increases coupled with superior performance at application conditions means that our LUXEON Rebel LEDs will outperform virtually any similar product available today.”

In addition to its LUXEON Rebel white portfolio, Philips Lumileds offers a broad color portfolio including the recently upgraded red and red-orange, royal blue, blue, cyan, amber, green, and PC amber. The entire LUXEON Rebel portfolio is available directly from Future Lighting Solutions, www.futurelightingsolutions.com.

High-Brightness Surface-Mount LEDs by Avago Avago Technologies a supplier of analog interface components for communications, industrial and consumer applications, have announced a new family of high-brightness LEDs in ultra-small packages at the Combined Exhibition of Advanced Technologies (CEATEC) Japan 2010.

The new ASMT-YTx2 tricolor surface-mount devices are available in 3.4- by 2.8- by 1.8-mm Plastic Leaded Chip Carrier (PLCC)-6 packages. The small footprint, high-brightness performance and robust contrast ratio of the devices all address demand for improved screen resolution in video screens and advertising signs used in transit malls, airports, stadium scoreboards and more, and also target gaming machines and decorative lighting.

Designers are choosing surface-mount LEDs because of their ease of assembly, compact footprint, and manufacturing flexibility, which reduce overall system development costs. The ASMT-YTx2 surface-mount devices are encapsulated in a heat-resistant silicone material, enabling them to operate in a wide range of environmental conditions with high reliability and long operating life. The LEDs


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have six leads that provide flexible color control for each chip to display a multitude of colors, including white. The devices are also water-resistant (compliance with IPx6), which reduces the cost and overall weight of signs by eliminating the need for protective covers.

“The market for indoor and outdoor displays presents a significant growth opportunity for LEDs over the coming years,” said Francis Khor, director of marketing for the Optoelectronics Product Division at Avago. “Avago’s ASMT-YTx2 LEDs are engineered to meet the display market’s demand for reliable high-brightness, high-resolution performance, all at a competitive cost.”

Additional ASMT-YTx2 Features

Compliance with IPx6 per IEC 60529:2001 (water-resistance) Wide 120-degree viewing angle Compatible with reflow soldering processes Lead-Free and RoHS compliant •Moisture sensitivity: JEDEC MSL 2a

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GAO Fiber Optic Identifier Features Five-Stage Intensity Display The Canadian firm’s model 820 identifies 1550nm calibrated wavelength signals as well as 800nm to 1700nm wavelength signals. The identifier has two detachable InGaAs detectors and boasts a five-stage display of signal intensity. GAO Fiber Optics recommends its portable fiber optic identifier which employs safe and reliable macro bending technology to avoid disruption of network communications that would normally be caused by disconnecting or cutting a fiber optic cable for identification and testing.

The fiber optic identifier is intended for engineers and technicians to identify dark or live fiber and excessive losses due to the misalignment of mechanical splices or poor connections.

The optical fiber identifier, model 820, features transmission direction display, identifies multiple signal frequencies and detects bare fibers, close packed fibers and pigtails. It identifies 1550nm calibrated wavelength signals as well as 800nm to 1700nm wavelength signals. This identifier boasts a five-stage display of signal intensity, two detachable InGaAs detectors, a high sensitivity of -38dBm, a low-voltage indication function and an automatic shutdown function. Additionally, it offers a results comparison function and uses a a rechargeable Lithium battery which supports continuous operation for up to four hours.

Sofradir’s Philippe Tribolet Passes Away The pioneer of IR detector technologies, who worked at Sofradir for over 25 years, sadly lost his battle with cancer and passed away on 9 November 2010. Sofradir’s CTO Philippe Tribolet has recently passed away. He had been fighting against cancer for more than a year when he died on November 9, 2010, aged 51.

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Tribolet joined Sofradir in 1986 and spearheaded developments in IR technology over the past 28 years. In his last role, he was responsible for directing the company’s research and development of technologies, as well as directing production programs for both French and international military, aerospace and security customers. He managed a team of more than 120 engineers and technicians. Prior to joining Sofradir, Tribolet conducted research in photovoltaic infrared detectors at CEA-Leti, a renowned laboratory in Grenoble, France. He graduated from ESME (University College of Mechanics and Electricity, Paris, France). Tribolet’s contributions to the development of Sofradir and the IR field in France have been critical and outstanding. Tribolet was highly respected both as a man and a scientist. He leaves behind his wife Kathrine and his two young children, Claire and Victor. David Billon-Lanfrey will stand in for Tribolet as acting CTO of Sofradir.

Avago Showcases “First Fully-Compliant” CXP Optical Transceiver The 120 Gbps transceiver solution provides optimal cable management flexibility for system installation and lower total cost of ownership for replacements. Avago Technologies is demonstrating what it claims is the industry’s first CXP parallel optic transceiver solution that is fully-compliant to industry standards at the Super Computing 2010 conference. The new 12-channel CXP transceivers support lane rates of up to 10 Gigabits per second (Gbps) for an aggregate bandwidth of up to 120 Gbps. The hot-pluggable modules feature an industry-compliant MTP multi-fiber push on (MPO) receptacle for removable fiber cable connectors. This allows flexible cable management at installation, simplifying design and lowering cost for high-performance computing, switch fabric and other short-range data and communication interconnect applications. The new Avago CXP optical transceivers are compliant to both IBTA MSA specifications for CXP QDRx12 and IEEE 100GBASE-SR10 specifications. The modules incorporate the company’s 850-nm Vertical-Cavity Surface Emitting Laser (VCSEL) technology, PIN array technology and integrated laser driver and receiver IC technology, which combine to provide robust electrical and optical performance at high data rates. Programmable equalization and de-emphasis for each of the modules’ lanes optimize the signal integrity performance for an edge mount solution and long PCB trace lengths. With superior jitter performance, the modules provide 10 Gbps performance per lane for up to 100 meters using OM3 fiber or 150 meters using OM4 fiber. “Our CXP transceiver works with separate cabling to offer a pay-as-you-go fiber optic solution with lower total cost of ownership and easier installation,” said Tina Ohlhaver, marketing manager for fiber optic products at Avago. “Avago has over a decade of experience in developing 12-channel parallel optic solutions, and we are leveraging this expertise and investment in building block



technologies to support our customers with both standards-based and custom proprietary solutions. We are pleased to demonstrate this breadth in technology and innovation leadership with our parallel optics portfolio here at SC10.” . Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

InGaP HBTs from Avago Are Multitasking The new broadband gain blocks deliver high linearity and low current consumption and are ideal for wide array of wireless communications and infrastructure applications. Avago Technologies, a leading supplier of analog interface components for communications, industrial and consumer applications has revealed two new high-linearity gain block amplifiers. The AVT-55689 and AVT-54689 gain blocks feature low current consumption and robust electrostatic discharge (ESD) protection, and are housed in an industry standard SOT-89 package. The new devices operate in frequency bands from DC to 6000 MHz. Their ease of use and extended broadband performance make them ideal for cellular and WiMAX wireless base stations, satellite and cable TV set-top boxes, military equipment and a variety of other wireless applications operating in this broad frequency range.

The AVT-55689 and AVT-54689 gain blocks leverage Indium Gallium Phosphate (InGaP) Hetero-junction Bipolar Transistor (HBT) process to achieve state-of-the-art reliability, temperature stability and performance consistency. The devices are each internally matched to 50 ohms, eliminating the need for additional radio frequency (RF) matching components. The cost-efficient devices’ broadband gain is also ideal for cellular infrastructure designs that require the same driver amplifier or gain block for different frequencies. AVT-55689 and AVT-54689 Performance At the typical operating condition of 5V and 83 mA, the AVT-55689 device delivers performance of 17.2 dB Gain, 33.0 dBm Output Third Order Intercept Point (OIP3), 19.4 dBm Output Power at 1 dB Gain Compression (P1dB) and 4.4 dB noise figure at 2000MHz. At the typical operating condition of 5V and 60 mA, AVT-54689 delivers performance of 17.4 dB Gain, 30.0 dBm OIP3, 17.7 dBm P1dB and 4.0 dB noise figure at 2000 MHz. Additional AVT-55689 and AVT-54689 Product Features • Input and output fully matched to 50 ohms • Built-in temperature compensated internal bias circuitry • Excellent uniformity in product specifications to minimize yield impact • RoHS-Compliant and MSL-1 rated package: lead and halogen free The AVT-55689 and AVT-54689 gain block amplifiers are priced starting from $0.63 and $0.59, respectively, in 10,000 unit volumes. Samples and production quantities are available now through the Avago direct sales channel and via worldwide distribution partners. Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.



Avago announces 2 new high-linearity gain block amplifiers Avago Technologies, a supplier of analog interface components for communications, industrial and consumer applications, today announced two new high-linearity gain block amplifiers.

The AVT-55689 and AVT-54689 gain blocks feature low current consumption and robust electrostatic discharge (ESD) protection, and are housed in an industry standard SOT-89 package. The new devices operate in frequency bands from DC to 6000 MHz. Their ease of use and extended broadband performance make them ideal for cellular and WiMAX wireless base stations, satellite and cable TV set-top boxes, military equipment and a variety of other wireless applications operating in this broad frequency range.

The AVT-55689 and AVT-54689 gain blocks leverage Indium Gallium Phosphate (InGaP) Hetero-junction Bipolar Transistor (HBT) process to achieve state-of-the-art reliability, temperature stability and performance consistency. The devices are each internally matched to 50 ohms, eliminating the need for additional radio frequency (RF) matching components. The cost-efficient devices’ broadband gain is also ideal for cellular infrastructure designs that require the same driver amplifier or gain block for different frequencies.

AVT-55689 and AVT-54689 Performance

At the typical operating condition of 5V and 83 mA, the AVT-55689 device delivers performance of 17.2 dB Gain, 33.0 dBm Output Third Order Intercept Point (OIP3), 19.4 dBm Output Power at 1 dB Gain Compression (P1dB) and 4.4 dB noise figure at 2000MHz.

At the typical operating condition of 5V and 60 mA, AVT-54689 delivers performance of 17.4 dB Gain, 30.0 dBm OIP3, 17.7 dBm P1dB and 4.0 dB noise figure at 2000 MHz.

Additional AVT-55689 and AVT-54689 Product Features

Input and output fully matched to 50 ohms Built-in temperature compensated internal bias circuitry

Excellent uniformity in product specifications to minimize yield impact RoHS-Compliant and MSL-1 rated package: lead and halogen free

U.S.Pricing and Availability

The AVT-55689 and AVT-54689 gain block amplifiers are priced starting from $0.63 and $0.59, respectively, in 10,000 unit volumes. Samples and production quantities are available now through the Avago direct sales channel and via worldwide distribution partners.

Avago Unveils 120 Gigabit HD Embedded Parallel Optical Interconnect New MiniPOD platform is said to offer industry’s first small-footprint modules with removable optical connector and pluggable electrical connector for 120 Gbps interconnect applications. Avago Technologies has showcased a high-bandwidth, high-density parallel optic solution for short-range data and communication interconnect applications at the Super Computing 2010 conference. The new 12-channel embedded MiniPOD parallel optics transmitter and receiver modules support lane rates of up to 10 Gigabits per second (Gbps) for an aggregate bandwidth of up to 120 Gbps. The small-footprint modules feature a low-cost, removable fiber cable connection and a pluggable electrical connection that provide flexible cable management at installation, simplifying design and lowering cost for switching and supercomputing applications. The new MiniPOD optical modules incorporate Avago 850-nm Vertical-Cavity Surface Emitting Laser (VCSEL) technology, Avago PIN array technology, and Avago integrated laser driver and receiver IC technology, which combine to provide robust electrical and optical performance at these high data rates. Using separate transmitter and receiver modules provides design flexibility and lowers the total



solution cost for the optical interconnect. Incorporating programmable equalization and de-emphasis into the modules’ highly compact 22- by 18.5-mm form factor allow system designers to optimize dense board layouts with superior signal integrity and system margin. “Our new MiniPOD 120 Gigabit optical interconnects offer a powerful combination of density, speed, performance and design flexibility, and are backed by our proven, high-volume manufacturing expertise,” said Tina Ohlhaver, marketing manager for fiber optic products at Avago. “Avago offers the market’s broadest range of high-density, high-bandwidth parallel optical interconnects, which allows us to meet unique customer layout and density needs.” Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

Avago Introduces First Optical Module For Multimode 40-Gbps Ethernet Uplinks The new QSFP+ transceiver modules’ four 10-Gbps data lanes address copper interconnect bandwidth-shortfall for multi-lane data communication applications. Avago has announced the availability of a four-channel parallel optic QSFP+ transceiver module for 40 Gigabit Ethernet applications, here at the Super Computing 2010 conference. The new AFBR-79E4Z QSFP+ transceiver modules enable data communication and interconnect applications that integrate four independent 10 Gigabit per second (Gbps) data lanes in each direction to provide 40 Gbps aggregate bandwidth. The pluggable modules also provide an ideal alternative to copper interconnects for switch and

router connections, data aggregation systems and backplane applications. The modules are based on Avago’s proven high reliability 850 nm technology : an Avago III-V VCSEL array transmitter and Avago PIN array receiver.

The proliferation of videos and multimedia files in business environments is placing a premium on bandwidth and density in data centers and high performance computing applications. Copper interconnects present significant challenges to achieve 40 Gbps bandwidth performance, and their power and size requirements are inefficient for higher-bandwidth applications. As a result, system designers are making the transition to optical interconnects, which handle much higher bandwidths for longer reach lengths, consume less power, improve electromagnetic noise resistance and provide more flexible cable management than copper-based solutions. “Avago has a long history of optical fiber firsts going back to our HP roots, and we are pleased to add this new 40 Gigabit Ethernet QSFP+ transceiver solution to the list,” said Tina Ohlhaver, marketing manager for fiber optic products at Avago. “Avago is uniquely positioned to bring such innovative fiber optics to market with the unmatched reliability of our in-house laser technology and our IC know-how.” The AFBR-79E4Z QSFP+ modules are fully compliant to the IEEE 802.3ba 40GBASE SR4 specification, and they support the IBTA 4 x 10G QDR for Infiniband applications. The modules provide designers with maximum flexibility to support installations of varying cable links or for difficult cable plant installations. With data rates of 10 Gbps for up to 100 meters using OM3 fiber or 150 meters using OM4 fiber, the QSFP+ modules operate over multimode fiber systems using a nominal wavelength of 850 nm. The modules’ electrical interface uses a 38 contact edge type



connector while the optical interface uses either an 8 or 12 fiber MTP® (MPO) connector. The Avago AFBR-79E4Z QSFP+ transceiver modules provide superior electro-optical noise-immunity to enable the optimal jitter performance required for high speed computing, server clustering, Infiniband and Ethernet switching and core routers. Additionally, the transceivers are hot pluggable for ease of installation. . Additional AFBR-79E4Z/-79E4Z-D Product Features include • Maximum power consumption under 1.5W • High port density with 21 mm horizontal port pitch • 0 to 70° C case temperature operating range • The AFBR-79E4Z-D transceiver features full real-time digital diagnostic monitoring The Avago AFBR-79E4Z transceivers are priced at $550 each in 10-piece quantities, and the AFBR-79E4Z-D transceivers are priced at $600 each in 10-piece quantities. Samples and production quantities are available now through the Avago direct sales channel and via worldwide distribution partners. Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

Avago’s Optical Transceiver Increase Port Density by 30% The firm says its new Mini-SFP+ Line offers industry’s smallest form factor for 10-Gbps pluggable modules for ethernet equipment. Avago Technologies unveiled a new form factor for fiber-optic transceivers that enables increased port density in ethernet and storage equipment at the Super Computing 2010 conference. The new mini-SFP+ (mSFP+) pluggable modules

enable 30 % greater port density over industry-standard SFP+ transceivers, while delivering the same data-transmission performance for next-generation 10-Gbps Ethernet equipment designs and 8-Gbps Fibre Channel for storage applications. The new mSFP+ transceivers incorporate Avago 850-nm Vertical-Cavity Surface Emitting Laser (VCSEL) and PIN detector technology and comply with the optical interface specification per IEEE 802.3ae 10GBASE-SR standards. The devices are designed for low power consumption with typical dissipation of 0.6W. Avago has teamed with multiple cage and cable suppliers to provide a complete 10-Gbps Ethernet mSFP+ solution. “Avago is the market leader in 8- and 10-Gbps SFP+ transceivers, and our new mini-SFP+ devices integrate our proven technology in an innovative form factor that helps our world-class networking customers such as Brocade to deliver higher density networking equipment,” said Tina Ohlhaver, marketing manager for fiber optic products at Avago. “Avago optical transceivers offer unparalleled reliability, with not a single VCSEL failure in the millions of 8- and 10-Gbps modules we have shipped to date.” Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers.

Skyworks Helps Craft First LTE Mobile Handset Two of the firms GaAs MMICs manufactured with its InGaP HBT will power Samsung’s latest 4G mobile phone, the ‘Craft’.

Skyworks Solutions, an innovator of high reliability analog and mixed signal semiconductors enabling a broad range of end markets, today announced that two of its power amplifier modules are enabling the



first commercial long term evolution (LTE) handset in the United States.

Samsung’s newest 4G mobile phone, the Craft, was launched in Las Vegas by MetroPCS and leverages the SKY77702 and the SKY77703.

The carrier expects to cover 19 markets by 2011 and approximately 110 million LTE customers in major cities such as Dallas, Los Angeles and New York. Today’s 4G systems offer a comprehensive solution where data and streamed multimedia are available to consumers anytime, anywhere at higher data rates than previous generation networks. In July 2010, Skyworks enabled the world’s first commercial LTE device, Samsung’s high speed 4G USB modem.

“Skyworks is delighted to once again be at the forefront of the technology powering next-generation devices that allow consumers to enjoy higher data rates and always-on connectivity,” said Gregory L. Waters, executive vice president and general manager of front-end solutions at Skyworks. “Our solutions benefit handset OEMs and smart phone providers, as well as infrastructure suppliers and operators worldwide by improving efficiency and performance, boosting network throughput, and simplifying roaming to provide the best consumer experience.”

The Samsung Craft or SCH-R900, comes with a full hypertext markup language (HTML) Web browser, full touch display with a slide-out QWERTY keyboard, WiFi connectivity, and a touch screen display. The handset was designed as an entertainment device for providing fast connectivity to the Web and access to streaming video and music.

The SKY77702 and the SKY77703 PAMs are fully matched 10-pad surface mount modules (SMMs) developed for wideband LTE applications. These small and efficient modules pack full 1850 - 1910 MHz (SKY77702) and 1710 - 1785 MHz (SKY77703) bandwidth coverage into a single compact package.

Because of high efficiencies attained throughout the entire power range, both devices deliver unsurpassed talk-time advantages. Both modules also meet the stringent spectral linearity requirements of LTE data transmission with high power added efficiency (PAE). In addition, a

directional coupler is integrated into the devices, thus eliminating the need for any external coupler.

The single gallium arsenide (GaAs) microwave monolithic circuit (MMIC) contains all active circuitry in the modules. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. Output match into a 50-ohm load is realized off-chip within the device packages to optimize efficiency and power performance.

The modules are manufactured with Skyworks’ indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) bipolar field effect transistor (BiFET) process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity.

These PAMs are available today in volume production.

Skyworks Solutions is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management, industrial, medical, military and mobile handset applications.

The Company’s portfolio includes amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrids, infrastructure RF subsystems, mixers/demodulators, phase shifters, PLLs/synthesizers/VCOs, power dividers/combiners, receivers, switches and technical ceramics.

Headquartered in Woburn, Mass., Skyworks is worldwide with engineering, manufacturing, sales and service facilities throughout Asia, Europe and North America.

Freescale Expands Intelligent Radar Technology With SiGe Chips The firm’s Xtrinsic 77 GHz silicon germanium chipset advances automotive safety by enabling vehicles to sense potential crash situations.



Freescale Semiconductor is now providing samples of 77 gigahertz (GHz) silicon germanium (SiGe) integrated chipsets to select customers for use in automotive radar systems. Freescale’s radar solutions provide long- and mid-range functionality, allowing automotive systems to monitor the environment around the vehicle to help prevent crashes. The automotive industry’s efforts to achieve a goal of zero automotive-related fatalities, along with consumer demand and government legislation, are driving adoption of advanced automotive safety systems. Advanced driver assistance systems (ADAS), radar and camera systems are expected to become government-mandated in the future. “77 GHz is likely to be the European Union’s radar band of choice in 2013, with China and the United States expected to follow,” said Demetre Kondylis, VP and general manager of Freescale’s Sensor & Actuator Solutions Division. “Advanced SiGe mixed-signal technology is a critical differentiator for our radar business. It gives us a distinctive advantage to offer our customers exceptional product functionality and capability, such as various modulation schemes in a standalone mode of operation, high-speed frequency ramp up, competitive power consumption and best-in-class reliability.” Freescale Xtrinsic radar chipsets are the most advanced SiGe technology on the market, consisting of a transmitter and a multi-channel receiver with an integrated phase-locked loop (PLL). Freescale’s 77 GHz technology allows a device to switch between long- and short-range functionality simply by issuing a serial peripheral interface (SPI) command. This enables the same radar module to be used for multiple safety systems, such as adaptive cruise control, headway alert, collision warning and mitigation. Long-range radar, used for adaptive cruise control and lane departure warnings, has long and narrow coverage directly in front and back of the car. Short-range radar, ideal for blind spot detection, pre-crash and stop-and-go applications, monitors the car’s immediate surroundings with a wide spatial view that covers shorter distances.

Freescale has been developing its radar technology for collision warning and avoidance for the past several years and is one of the only companies developing with SiGe technology for long-range radar. SiGe has become the standard for many wireless applications as consumer demand for low-power portable products continues to increase. Recently, SiGe has garnered increasing interest for emerging high-frequency markets, such as automotive radar. Freescale’s radar system is based on multi-channel receivers and transmitters that allow high-level integration and complex signal generation and processing. A typical Freescale RF front-end solution consists of a transmitter chip with an integrated PLL, power amplifier and local oscillator (LO) output and an on-chip ramp generator, along with one or several multi-channel receivers that provide the low-noise down-conversion of the radar signals into the intermediate frequencies (IF) domain. The chips are manufactured in Freescale’s 0.18 μ BiCMOS technology, which allows the combination of high-speed bipolar devices with the high integration level of CMOS. This technology is ideal for automotive safety systems and is also applicable for aerospace, military and industrial markets. Several tier one automotive suppliers are currently sampling the chipsets, and Freescale plans to have standard products available by 2012. The company is showcasing its radar technology this week at electronica 2010 in Munich, Germany. The overall system functionality is demonstrated through the use of radar in a rescue helicopter. A forward-looking synthetic aperture radar, based on digital beam forming, demonstrates the advantages of the multi-channel approach with modern signal generation and processing. Freescale has offered MEMS-based sensors for more than 30 years and is the number one merchant of automotive microelectromechanical systems (MEMS), according to iSuppli. Building on its heritage of sensor innovation, Freescale’s Xtrinsic sensing solutions offer the right combination of intelligent integration, logic and customizable software to deliver smarter, more differentiated applications.



Freescale’s sensors, analog products and 8-, 16- and 32-bit MCU and MPU families provide intelligence and connectivity for advanced safety, body electronics, chassis, engine control, powertrain, driver information and telematics.

Skyworks Expands Presence in Asia Skyworks today announced that it has opened an office in Singapore (Skyworks Global Pte Ltd) to support increasing demand for solutions within its linear products portfolio and to further enhance its manufacturing activities in the region.

“Skyworks is excited to be broadening our footprint in Asia as part of our continuous effort to improve customer service and bring innovative products closer to the customer,” said Bruce J. Freyman, vice president of worldwide operations for Skyworks. “By expanding our engineering, quality and supply chain capabilities within Asia, we are better positioned to efficiently meet increasing customer demand.” Skyworks’ Singapore office will support strategic sourcing, supply chain planning, logistics and engineering; provide storage for finished goods and die-bank distribution; and serve as a Failure Analysis laboratory to help shorten customer response time. www.skyworksinc.com

Avago Extends Talk Time in GSM/EDGE Handsets with New Linear InGaP PA The ACPM-7868 Power Amplifier Modules (PAMs) support Qualcomm chipsets and enable a simple migration path to linear modulation for the widely used GSM standard. Avago Technologies, a leading supplier of analog interface components for communications, industrial and consumer applications, has unveiled its latest PAMs that extend handset talk time for GSM/EDGE communication.

The ACPM-7868 PAMs are fully compatible with Qualcomm’s newest generation of chipsets that support linear quad-band GSM/EDGE operation, enabling improved power efficiency for the world’s most widely-used cellular standard. The PAMs incorporate Avago’s sixth generation CoolPAM technology, which enhances power efficiency with digital power mode control. Two mode control pins provide four power modes for low band and three power modes for high band. The technology delivers higher efficiency, resulting in extended talk time. At 29 dBm antenna power where talk time is measured, the technology enables a handset to save current consumption by more than 100 mA compared with conventional power amplifiers. It also reduces quiescent current down to typically 8.5 mA. “Handset manufacturers are seeing strong demand for extended talk time of EDGE,” said James Wilson, marketing director for RF and Microwave products at Avago. “Avago’s new ACPM-7868 power amplifier modules use our proprietary CoolPAM technology to deliver better power efficiency and help meet these demands.” Avago’s ACPM-7868 PAMs feature pre-distortion by chipset for improved linearity and efficiency. The modules incorporate 50 Wmatching networks for both RF input and output. The new power amplifiers are manufactured on advanced InGaP HBT (Hetero-junction Bipolar Transistor) technology with proven state-of-the-art reliability, temperature stability and ruggedness. The ACPM-7868 modules are available in a compact 16-pin surface mount package with a 5



x 5 mm footprint. The package’s 0.9-mm height supports slim handset designs. The devices are lead-free and RoHS compliant, and have a -20°C to +90°C case operating temperature range. Avago’s ACPM-7868 GSM/EDGE PAMs are priced beginning at $1.50 in 10,000 piece quantities. Samples and production quantities are available now through Avago’s direct sales channel and worldwide distribution partners. Avago Technologies is a leading supplier of analog interface components for communications, industrial and consumer applications. By leveraging its core competencies in III-V compound and silicon semiconductor design and processing, the company provides an extensive range of analog, mixed signal and optoelectronics components and subsystems to approximately 40,000 end customers. Backed by strong customer service support, the company’s products serve four diverse end markets: wireless communications, wired infrastructure, industrial and automotive electronics, and consumer and computing peripherals. Avago has a global employee presence and heritage of technical innovation dating back nearly 50 years to its Hewlett-Packard roots.

Finisar is King Pin with Brocade 2010 Customer Focus Award The optical components provider has been awarded for its deep commitment to customer service and satisfaction. Finisar, a global provider of optical communication product has received the 2010 Customer Focus Award from Brocade. Brocade is a provider of innovative networking solutions that enable today’s complex, data-intensive businesses to optimize information connectivity and maximize the business value of their data. Finisar received the award at the Brocade Supplier Summit ceremony on September 14th.

Finisar supplies Brocade with fiber optic transceivers and transponders that enable high-performance data transmission across networking systems. The award honored Finisar for a deep commitment to Brocade in providing quality products and customer support at a level unmatched in the industry. In addition, Finisar was recognized for its high level of participation in standards committees and ultimately driving standards initiatives supporting Brocade’s goals. “We are pleased to bestow the 2010 Customer Focus Award to Finisar, an unrelenting supplier that has provided extraordinary customer service and support,” said Lisa Loscavio, VP of Supply Chain Operations at Brocade. “We also appreciate the executive sponsorship through all functions of their company which mirror the entire organization’s commitment to our success.” “Finisar is honored and humbled to have received this recognition from Brocade, an industry leader and valued customer,” said Todd Swanson, Senior VP of Sales and Marketing at Finisar. “We strive to provide the highest level of service and satisfaction to all of our customers and are pleased that we have been recognized for these efforts.” Finisar Corporation manufactures fiber optic subsystems and components that enable high-speed voice, video and data communications for telecommunications, networking, storage, wireless, and cable TV applications. For more than 20 years, Finisar has provided critical optics technologies to system manufacturers to meet the increasing demands for network bandwidth and storage. Finisar is headquartered in Sunnyvale, California, USA with R&D, manufacturing sites, and sales offices worldwide.

Infonetics Report names JDSU as leading provider of ROADM Telecom Research Firm Indicates JDSU Captured 38 Percent Total ROADM Revenue and 39 Percent of ROADM Shipments in First Half of 2010

JDSU have announced that Infonetics Research, a telecom market research firm, identified JDSU as


product news ♦ RF electronics

the leading provider of Reconfigurable Optical Add/Drop Multiplexer (ROADM) products for the first half of calendar year 2010 in its “2010 Biannual ROADM Components” report. Findings indicate that JDSU captured 38 percent of total ROADM revenue and 39 percent of all ROADM units shipped during this time.

“JDSU has been providing leading ROADM technology and integration capabilities to the optical market since the beginning, even back in the days when liquid crystal wavelength blockers were first introduced,” said Brandon Collings, CTO of Optical Communications at JDSU. “We are committed to a continued focus on R&D and on our extensive ROADM roadmap to ensure we not only maintain market leadership but also the technology leadership our customers and service providers require for the Self Aware Networks of the future.”

ROADM products offered by JDSU make it possible for network operators to add or drop network capacity and to flexibly support increased bandwidth needs in various parts of the network so that consumers and business can use on demand services such as voice, video and data applications. JDSU is the only company that offers all three leading ROADM technologies that include Liquid Crystal (LC), Microelectromechanical Systems(MEMS) and Planar Lightwave Circuit (PLC) applications to address various market needs.

Additional Infonetics Report Highlights

The WDM ROADM optical equipment market will remain the fastest growing segment of the optical equipment business. The key component fueling growth in the WDM ROADM space is the wavelength selective switch (WSS), which allows wavelength route provisioning to become dynamic and protection switching to take place at the optical layer rather than the electrical layer. Worldwide revenue from WSS components with 50GHz of channel spacing is forecast to account for more than half of the market by 2012.

Product News RF electronicsJack Kennedy Appointed Director at M/A-COM Kennedy will head the Global Distribution division and be assisted by newly appointed Deputy Director of Distribution, James Dempsey. M/A-COM Technology Solutions, a leading supplier of semiconductors, active and passive components and subassemblies for radio frequency (RF), microwave and millimeter wave applications, has appointed Jack Kennedy as the new Director of Global Distribution. Kennedy will report to Bob Donahue, Chief Strategy Officer and will oversee the strategic development of M/A-COM’s global distribution channels to ensure they are all working toward the overall success of the company. “As market opportunities expand, enhancing the capabilities and efficiencies of our global distribution channels is fundamental to supporting our broad global customer base, says Bob Donahue. We are very pleased that Jack accepted this important role.” Kennedy has a long and productive history with the company in roles such as Strategic Account Lead, Global Account Director, as well as roles in Sales Management and Field Sales Engineering. He received his B.S. from Boston University and is currently completing his M.S. at Northeastern University. James Dempsey has also been promoted to the newly created position of Deputy Director of Distribution. He will be working alongside Jack Kennedy and will assist Kennedy in the areas of distribution channel management. Dempsey will be a key supporter in the assurance of the continuity of service between distributors, manufacturer representatives, direct sales, factory support.

RF electronics ♦ product news


Dempsey has more than 25 years of experience in the RF Microwave industry and has worked in a number of different roles for Skyworks, Alpha Industries, and Herley Micro-Dynamics. His diverse knowledge comes from working in areas such as aviation radar, military products, wireless data, and infrastructure. Dempsey obtained his Associates Degree in Electronic Engineering Technology from Wentworth Institute of Technology. He also has a certificate from the Greater Boston Executive Business Management Program at MIT Sloan School of Management. M/A-COM Technology Solutions is a leading supplier of semiconductors, active and passive components, and subassemblies for use in radio frequency (RF), microwave and millimeter wave applications. The company provides innovative design solutions and products including GaAs, InGaAs, InP and SiGe IC products. Headquartered in Lowell, Massachusetts, M/A-COM Tech builds on 60 years of experience to develop and manufacture active and passive products, including Si and compound semiconductors from facilities in Lowell, MA, and Torrance, CA. Infrastructure products continue to be provided by the company’s facility in Cork, Ireland, and Laser Diode products in Edison, New Jersey.

Samsung Selects ANADIGICS Power Amplifiers for New GALAXY Tab Devices Demonstrating its key role in helping drive the most advanced 3G and 4G mobile devices, ANADIGICS, Inc. today announced that its power amplifiers have been selected by Samsung for their highly anticipated GALAXY Tab product.

ANADIGICS’ AWC6323 power amplifier (PA) is used in the Samsung GALAXY Tab offered by Sprint and Verizon Wireless in the United States, and ANADIGICS’ AWU6601 PA powers the Samsung GALAXY Tab in the Korean market. Both PAs are part of the ANADIGICS High-Efficiency-at-Low-Power (HELP) portfolio of products that enhance the performance and efficiency of 3G

devices.

The GALAXY Tab, based on the Android Operating System, is Samsung’s first tablet computing device and is part of its new portfolio of mobile products. The GALAXY Tab features a 7-inch TFT-LCD display for a wide variety of mobile applications, including watching TV shows and movies, viewing photos, browsing the web, playing games, e-book reading and document sharing. It is also one of the first tablets in the market to have two (front-facing & rear) cameras. ANADIGICS’ high efficiency PAs help to extend the Tab’s battery life and the user’s mobile broadband experience.

“The Samsung GALAXY Tab is one of the most impressive mobile devices available today. We are honored to play an integral role in helping Samsung deliver exceptional mobile experiences to consumers through this product,” said Mario Rivas, President and CEO for ANADIGICS. “With our industry leading high performing PAs and Samsung’s innovative cutting edge products, we continue to strengthen our long-standing relationship by providing high-quality wireless computing solutions.”

Key features of the ANADIGICS PAs utilized by the Samsung GALAXY Tab:The AWC6323 is the first ANADIGICS HELP3E™ dual-band CDMA PA in a 3 x 5 x 1 mm footprint. Featuring the industry’s lowest quiescent current for a CDMA power amplifier, the AWC6323 plays an integral role in extending battery life and improving the overall performance of today’s leading mobile devices. The device is manufactured on an advanced InGaP HBT MMIC technology, offering state-of-the-art reliability, temperature stability and ruggedness.

The AWU6601 incorporates ANADIGICS’ HELP3 technology to provide low power consumption without the need for an external voltage regulator. A “daisy-chainable” directional coupler is integrated in the module, eliminating the need for external couplers thus simplifying the device board layouts. The AWU6601 is also manufactured on InGaP HBT technology and the self-contained 3 x 3 x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity.

Additional facts and highlights about the



AWC6323:• The AWC6323 is a dual band CDMA PA supporting the Cell (824MHz-849MHz) and PCS (1850MHz-1910MHz) bands.• The AWC6323 offers three mode states to achieve high-power added efficiencies at several power levels during the phone operation.• The device features built-in directional couplers for each band with a common coupler port; this helps eliminate the surface mount couplers placed on the phone board.• It also meets the stringent linearity requirements of CDMA EV-DO Revisions A and B modulations to offer very high data rates for smart phones and data cards.

Additional facts and highlights about the AWU6601:• The AWU6601 is HSPA compliant and features simple calibration with only two bias modes.• The device has low quiescent current of 8 mA, low leakage current in shutdown mode at less than 1A• It’s optimized for a 50 OHM system.• The AWU6601 features a RoHS compliant package, 260 °C MSL-3.

RFMD Unveils 2.3-2.7 GHz PA IC For Wireless Applications The firm’s latest power amplifier IC is suited to WiFi, WiMAX, LTE and other high-performance wireless applications. RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has unveiled the RF5632, a 2.3-2.7 GHz power amplifier IC. The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks. The RF5632 offers global customers a broadly applicable power amplifier IC featuring a powerful combination of industry-leading RF performance

and best-in-class product size and ease-of-use. The module integrates a 3-stage PA and power detector into an industry-leading 4mm x 4mm QFN package, significantly minimizing customer design footprint requirements. Additionally, the RF5632 operates from a standard 5V supply, eliminating additional power supply requirements, enhancing design flexibility and lowering bill-of-material costs (BOM). The RF5632 is also fully DC and RF tested including EVM at the rated output power, maximizing application yields and accelerating time-to-market. The RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3—2.4GHz, 2.4—2.5GHz, and 2.5—2.7GHz frequency ranges. The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. RFMD’s latest device offers high gain of 34dB and high linear output power, with best-in-class efficiency according to the firm. The RF5632 maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. The module also features internal input and inter-stage matching, a power-down mode and power detection. The RF5632 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground. The RF5632 starts at $3.10 per 10,000 units. Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels. RF Micro Devicesis a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.



RFMD & Freescale Unite to Deliver High-Performance ZigBee Products The modules will be used for smart energy applications that require high RF performance to ensure a robust and reliable operation in varying environments. RF Micro Devices and Freescale Semiconductor have teamed up to deliver ZigBee solutions for a broad range of smart grid applications. RFMD’s newly introduced RF6535 ZigBee front end module (FEM) has been combined with Freescale’s MC1321x System-in-Package (SiP) to create the RF6535/MC1321x reference design. The RF6535/MC1321x reference design simplifies RF design requirements, while reducing product cost and complexity. The reference design is targeted at ZigBee Smart Energy and Home Area Network (HAN) applications that require high RF performance to ensure a robust and reliable operation in varying environments. Working together, RFMD and Freescale address the need for aggressive size reductions in IEEE 802.15.4 designs with a reduced solution footprint and minimized component count. Bob Van Buskirk, president of RFMD’s Multi-Market Products Group (MPG), said, “RFMD and Freescale are leveraging each other’s expertise to deliver high-performance, highly integrated solutions that reduce design cycle times, lower customer costs, and accelerate product time-to-market. Large-scale smart energy projects are forecast to grow rapidly, with particular demand anticipated in low-power wireless technologies like ZigBee.” “Emerging markets such as Smart Energy require increased output power for extended range and reliable communications.” said Brett Black, manager of Freescale’s Wireless Connectivity Organization. “Freescale and RFMD are building on each other’s strengths to offer complete solutions for these markets.” RFMD’s highly integrated RF6535 features a 2.4GHz to 2.5GHz +22dBm power amplifier, Tx

harmonic output filter, double-pole double-throw (DPDT) diversity switch, and a low-noise amplifier (LNA). The RF6535 is housed in a 3.5 x 3.5 x 0.5mm package that is three times smaller than competitive offerings, greatly reducing discrete component requirements while minimizing footprint and assembly costs. The transceiver interface is a two-port Rx/Tx integrated balun.

RFMD’s expanding portfolio of ZigBee FEMs enables customers to accelerate new ZigBee products to market while reducing component count, size, cost, and power consumption. RFMD’s RF6535 single-chip ZigBee FEM is specifically optimized for Smart Energy/AMI applications including smart meters, and HAN devices including Home Energy Gateways, In-home Displays and appliances. Freescale’s MC1321x family incorporates a low-power 2.4 GHz radio frequency transceiver and a microcontroller into a single LGA package to meet cost and limited product space budgets while providing excellent RF system performance. Coupled with RFMD’s RF6535 FEM, the MC1321x fits perfectly with most ZigBee applications in consumer electronics, energy management, health care, home automation, telecommunication services, and building and industrial automation. ZigBee is the global wireless language connecting dramatically different devices to work together and enhance everyday life. The ZigBee Alliance is a non-profit association of more than 350 members



driving development of ZigBee wireless technology. The Alliance promotes world-wide adoption of ZigBee as the leading wirelessly networked, sensing and control standard for use in consumer electronic, energy, home, commercial and industrial areas. RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.

RFMD Unveils GaAs IF Mixers for Wireless Applications The firm’s latest products are targeted at applications include cellular infrastructure, wireless backhaul and other high-performance wireless systems. RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has expanded the Company’s RF component catalog to include two new high linearity differential IF mixers: the RFMX0015 and RFMX1015. Both new products are optimized for operation across a broad range of end markets, including cellular infrastructure, wireless backhaul and other high-performance wireless systems. The increasing deployment of 3G and LTE wireless systems is spurring demand for very high linearity (IIP3> 28dBm) down-converters. RFMD’s RFMX0015 and RFMX1015 feature an innovative passive GaAs mixer core that delivers high linearity. When combined with the GaAs HBT IF amplifier the combination provides an industry-leading IIP3/DC current figure of merit (29dBm/200mA) for a down-conversion differential IF mixer with 7dB gain and 0dBm LO drive.

The RFMX0015 and RFMX1015 operate in the standard cellular bands between 600 to 1050MHz and 1500 to 2200MHz respectively and support both high and low-side LO injection for IF frequencies up to 300MHz. In addition, the mixers feature an IF bias pin that enables users to reduce the DC current to save power when peak linearity performance is not required. Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels. RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD.

RFMD Expands Family of GaN “Unmatched” Power Transistors RFMD says its GaN high-efficiency RF3932 power transistor delivers superior performance over GaAs and silicon technologies. RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140-watt RF3934, which is the highest output power device in RFMD’s UPT family. RFMD plans to release a third GaN UPT device



in the first calendar quarter of 2011, significantly expanding the GaN power transistor options available to RFMD’s customers. RFMD’s GaN unmatched power transistors support “green” architectures that reduce energy consumption, improve thermal management and optimize network efficiency for network operators. The RF3932 operates over a broad frequency range (DC to 3GHz) and delivers high peak efficiency of >65%. Additionally, the RF3932 incorporates simple, optimized matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier. The RF3932 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD’s advanced heat sink and power dissipation technologies to deliver excellent thermal stability and conductivity. The 75-watt RF3932 and the 140-watt RF3934 are optimal for both driver and/or output stages, depending on overall power requirements. Bob Van Buskirk, President of RFMD’s Multi-Market Products Group (MPG), said, “RFMD is very pleased to expand our GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD’s GaN product portfolio clearly demonstrates our commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability and ‘green’ power consumption advantages.” RFMD’s 48-volt, high power-density GaN semiconductor process features high RF power density and efficiency, low capacitance, and high thermal conductivity. This unique combination of features enables the development of compact and efficient high power amplifiers (HPAs) for a broad range of applications, including private mobile radio (PMR), 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar and CATV transmission networks The RF3932 is currently available for sampling and mass production. RF Micro Devices is a global leader in the

design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.

RFMD Unveils Portfolio of Broadband 6-Bit Attenuators The RFSA2614 and RFSA2624 modules target high-performance wireless applications, including 3G/4G/LTE Cellular infrastructure, wireless backhaul and WiMAX. RF Micro Devices has launched its broadband 6-bit digital step attenuator product portfolio, with its RFSA2614 and RFSA2624 modules. RFMD’s newest high-performance components are optimized for operation across multiple market segments, including 3G/4G/LTE cellular infrastructure, WiMAX, wireless backhaul and other high-performance wireless communications applications.

The RFSA2614 and RFSA2624 digital step attenuators (DSAs) feature a 6-bit design with both serial or parallel mode programming, covering a broad frequency range from 50MHz to 4000MHz. Radio designers can use RFMD’s DSAs to adjust the gain of high linearity receive and transmit channels over a 31.5dB range with 0.5dB step resolution. The new DSAs deliver industry-leading performance, highlighted by superior settling time of 200ns, as well as a P1dB (1 dB compression point) of 27dBm and a IIP3 (3rd-order intercept point) of +48dBm.



Samples and production quantities are available now through RFMD’s online store and through local RFMD sales channels. RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.

TriQuint Releases 77 GHz GaAs Portfolio The cost-competitive chipsets power the Delphi Automotive radar system and are now available for new motion-sensing applications. TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, is offering its 77 GHz Gallium Arsenide (GaAs) chipset portfolio for motion detection and adaptive cruise control applications. TriQuint products are currently used by Delphi Automotive in its successful multimode electronically scanning radar (ESR) that enables adaptive cruise control in multiple vehicles. TriQuint 77 GHz chipset devices appeared first in 2010 model year automobiles. The TriQuint 77 GHz portfolio includes eight products (TS-16949 factory certified) that can be utilized in a variety of design configurations for motion sensing automotive and non-vehicular applications. In developing its system for Delphi, TriQuint combined time-tested, rugged GaAs designs utilized in defense applications with cost-conscious systems scaled for high-reliability consumer products. TriQuint also developed processes to further enhance performance and reliability

including the company’s proprietary CuFlip ‘flip-chip’ technology that replaces wire-bonded devices with direct mounts to circuit boards. CuFlip enhances reliability and ruggedness while simplifying overall assembly. “At Delphi, we were looking for a chipset supplier with a track record of developing high performance products that would help us succeed in the commercial marketplace. TriQuint’s experience with GaAs modules and their ongoing support has helped us to provide our customers game changing driver assist technology,” remarked Mark Lynn, Chief Engineer, Active Safety, Delphi Automotive. A multimode ESR with proven solid-state technology is the heart of adaptive cruise control systems like the one developed by Delphi. Its class-leading performance, packaging and durability have helped enable a driver assistance application that not only enhances safety and convenience, but is affordable to more buyers, remarked TriQuint Vice President, Brian P. Balut. “We’re pleased to support a company like Delphi that has an industry-leading product line-up,” remarked Balut. “The microwave devices that Delphi has used in its ESR modules are now available for other motion sensing applications that require market-tested, automotive-qualified performance. The products are also cost-competitive for many different motion-based applications and concepts such as security systems.” TriQuint RF, microwave and millimeter wave products are used by manufacturers including Delphi and OEM mobile handset, base station radio and optical network makers across Europe, Asia and North America. Technical Details – TriQuint’s 77 GHz Automotive-Qualified Chipset Solutions (TS-16949) TGA4705-FC Flip-chip low noise amplifier with 23 dB small signal gain and a 5 dB noise figure at 77 GHz (typical) for Receive (Rx) chain architectures. TGA4706-FC



Flip-chip medium power amplifier with 14 dBm saturated output power with 15 dB small signal gain at 77 GHz (typical). TGS4305-FC This 60-90 GHz SP3T switch offers a typical switching speed of < 5 nsec and when flipped provides a nominal 2.3 dB insertion loss, > 13 dB thru state return loss, and 20 dB isolation. TGS4306-FC This 70-90 GHz SP4T switch offers a typical switching speed of < 5 nsec and when flipped provides a nominal 3 dB insertion loss, 8 dB return loss in the thru state and 20 dB isolation TGV2204-FC A flip-chip voltage controlled oscillator (VCO) for frequency stability in Transmit (Tx) chains. It typically provides 7 dBm output power at 19 GHz with < -105 dBc/Hz phase noise at 1 MHz offset; its integrated divide-by-8 prescaler eases PLL design. TGC4702-FC A down converting IQ mixer with 12 dB conversion loss from 75 – 82 GHz to an IF frequency band of DC – 100 MHz (typical). TGC4703-FC A flip-chip frequency doubler that combines an input / output buffer amplifier and a frequency doubler providing 14 dBm saturated output power with 8 dB conversion gain (typical). TGC4704-FC A flip-chip combined medium power amplifier and frequency doubler providing 14 dBm saturated output power with 5 dB conversion gain (typical).

RFMD Unveils New Family of Integrated Configurable Components .RF Micro Devices, Inc., a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, today announced a new family of integrated configurable components for multiple markets. The highly integrated components, comprised of the RFFC207x and RFFC507x product families, perform multiple common RF functions in a reduced footprint while delivering the flexibility necessary to develop radio systems that operate over a wide dynamic range and across a broad range of frequencies and channel bandwidths.

The RFFC207x and RFFC507x product families integrate RFMD’s world-class fractional-N PLL/VCO combination with RF mixers to provide radio designers an elegant radio partitioning option with very high performance, superior integration and no compromise in flexibility. The RFFC207x and RFFC507x represent the second generation of RFMD’s innovative RF205x family of integrated configurable components, which enables radio designers across industries to shrink circuit board area, reduce risk and shorten product development time -- all of which lower the total cost of radio implementation.

The RFFC207x and RFFC507x expand upon the capabilities of the RF205x family by enhancing performance and extending frequency range to serve even more industries and applications. General purpose in nature, RFMD’s newest family of integrated configurable components is applicable to fixed and mobile infrastructure, radio repeaters, super-heterodyne radios, diversity receivers, frequency band shifters, CATV, software-defined radios, point-to-point radios, satcom, VHF/UHF radios, military, industrial and other applications.

The product family’s wide bandwidth enables use in multiple systems and applications. The RFFC207x series has a local oscillator (LO) range from 85MHz to 2700MHz, with a 30MHz to 2700MHz mixer on-chip. The RFFC507x series has an LO range of 85MHz to 4500MHz with mixer range extending up to 6000MHz.



With integrated phase noise of 0.18deg rms at 1GHz, the RFFC207x and RFFC507x improve system performance for radio designers. Additionally, the integrated fractional-N synthesizer features an advanced sigma-delta modulator to achieve ultra-fine step sizes and lower spurious products, while integrated mixers enable a smaller implementation (5mm x 5mm) than competing solutions. Finally, by integrating the entire LO path on-chip, the RFFC207x and RFFC507x eliminate the need for designers to work with the highly sensitive interface from VCO to mixer, saving valuable design time and improving end product manufacturing yields. The RFFC207x and RFFC507x series also deliver industry-low power consumption. The components’ bandwidth and phase noise specifications are achieved using only 125mA from a 3-volt supply (single-mixer, high linearity setting), and the current can be reduced to 100mA by reducing the programmable mixer linearity setting. Importantly, the 4500MHz components use only 10mA more than the 2700MHz components.

All of the components can be programmed through a simple 3-wire serial interface. They also feature a unique programming mode that allows up to four devices to be controlled from a common serial bus. By eliminating the need for separate chip-select control lines between devices and host controller, this lowers the cost of implementation and the risk of interference between RF and digital lines on the target PCB. Finally, two frequencies can be loaded into the device when it is initialized, allowing convenient switching between frequencies, and lock detect and general purpose pins are available, enabling control though the serial bus.

Anadigics Reveals High-Bandwidth RF Amplifier for Fiber-to-the-Home Systems The ACA2604 device enables increased data delivery for FTTH and RFoG subscribers Responding to an increasing demand for wider bandwidth data pipes for fiber-to-the-home (FTTH) and RF-over-Glass (RFoG) systems, Anadigics has announced an upgrade to its ACA2604 RF amplifier supporting operation to 1 GHz.

The improved ACA2604 enables cable MSOs and telco service providers to increase data rates as well as the number of channels available to consumers. This functionality is essential as sales continue to grow for high-definition TVs, VOD, and other OTT services which require significant amounts of bandwidth. The Anadigics ACA2604 RF amplifier is designed for use in fiber-to-coax equipment, such as optical network units for FTTH and RFoG systems incorporating radio frequency overlay, and fiber-to-the-building (FTTB) optical receivers for multiple dwelling units. The amplifier, driven by the forward path photodiode in a fiber optic RF receiver, forms the optical to electrical interface and boosts overall output to the in-home coax wiring. “Delivering 1 GHz performance from the ACA2604 is a significant milestone in our efforts to ensure that broadband service providers have the components necessary to provide the highest performance networks,” said Joe Cozzarelli, Senior Director, Broadband RF Product Line, Anadigics. “As the industry continues to evolve and equipment performance requirements increase, we’ll continue to push the limits of innovation to keep our customers ahead on the broadband demand curve.” The ACA2604 is manufactured using Anadigics’ proven GaAs technology that features state-of-the-art distortion performance, temperature stability, and ruggedness. The amplifier operates from a single +5 volt supply and is offered in a 5 mm x 5 mm x 1 mm surface mount package. Additional facts and highlights about the ACA2604 include: * Has an operating frequency between 50 and 1,000 MHz. * Features high linearity: CSO/CTB = - 65 dBc (@ 79 Chan., 21dBmV/ch ) * Offers low equivalent input noise: 4.5 pA/rtHz. * Does not require a transformer for interface to photodiode. * Features 22 dB Gain Adjust. * Packaged to be RoHS compliant. * Pin compatible with Anadigics’ ACA2601 RF amplifier. * Reference circuits and BOMs are available for common applications



Anadigics delivers integrated radio frequency (RF) solutions that OEMs and ODMs demand to optimize the performance of wireless, broadband and cable applications across all major networks and standards. Celebrating its 25th year, Anadigics features a diverse portfolio of highly linear, highly efficient RFICs. Headquartered in Warren, NJ, the company’s award-winning products include power amplifiers, tuner integrated circuits, active splitters, line amplifiers and other components that can be purchased individually or packaged as integrated RF and front-end modules.

Anadigics RF Amplifier Enables Higher Data Rates to More CATV Subscribers The ARA2021 device delivers higher output power with lower standby current on DOCSIS(R) 3.0 networks.

Anadigics has introduced its latest upstream path RF amplifier optimized for use in DOCSIS-compliant cable modems, CATV set-top boxes (STBs), residential gateways and Embedded-Multimedia Terminal Adapter (E-MTA) applications.

Designed to support a new high power operation mode specified in the recently-amended DOCSIS 3.0 telecommunications standard, the ARA2021 is claimed to provide the fastest broadband upstream pipe to subscribers located further from the CATV head end.

The performance of this device enables more subscribers on the network to take advantage of the fastest possible data transmission rates, ensuring

a quality broadband experience. At the same time, the ARA2021 supports energy “green” initiatives by reducing power consumption by up to 97% in standby mode.

Managed by CableLabs, a non-profit research and development industry consortium, the DOCSIS standard was created to help cable operators transition their businesses from solely delivering TV programming to becoming full-service providers of video, voice and data services. DOCSIS 3.0 is the current version of the standard, which includes a number of features, including channel bonding techniques that provide cable operators with a flexible way to boost end-user data speeds to as much as 160 Mbps downstream and 120 Mbps upstream.

“Based on the broadband consumers’ growing appetite for bandwidth-intensive applications such as remote hard drive backup, sharing of large data files, and HD video uploads, industry analysts foresee steady growth in the coming years for DOCSIS 3.0-compliant products,” said Joe Cozzarelli, Senior Director, Broadband RF Product Line, Anadigics. “We’ve developed the ARA2021 amplifier to meet the demanding requirements of CATV networks that can deliver the highest data rates and extended reach, providing the end-user with an exceptionally satisfying broadband experience.”

The ARA2021 is a highly linear, programmable gain amplifier that includes a digitally controlled, multiple-stage precision step attenuator and provides extremely low harmonics and superior distortion performance at high output power levels. This performance enables the amplifier to overcome long loop attenuation created by directional couplers, taps, attenuators, and other input loses, thus ensuring a high quality signal at the head end.

Additional facts and highlights about the ARA2021 include:

* Supports linear output power levels up to +67 dBmV (single channel). * Integrates a precision step attenuator with up to 49 dB of attenuation in 1dB increments. * Features 35 dB of RF voltage gain (at minimum attenuation). * Offered in a 20-pin, 4 mm x 4 mm x 1mm MLPQ (QFN) package. * Operates in a frequency range from 5 MHz to 85



MHz. * Includes a low-power Transmit Disable (standby) mode that consumes only 35mW.

Engineering evaluation samples of Anadigics’ ARA2021 amplifier are available now for qualified opportunities.

RFMD Expands Portfolio of GaN-Based CATV Components The firm’s latest hybrid power doubler amplifier module minimizes the operational expenses associated with the Hybrid Fiber Coaxial HFC network, most notably power consumption and reliability. RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has announced availability of the RFPD2650. This new gallium nitride-based hybrid power doubler amplifier is claimed to deliver industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption.

The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes. Power doublers are used in HFC networks to extend the range of signal transmission from the

head-end to the consumer. To minimize the cost of delivering the signal to the edge of their networks, multi system operators (MSOs) prefer to use as few amplifiers as possible. MSOs are also increasingly seeking to minimize the operational expenses associated with the HFC network, most notably power consumption and reliability. The RFPD2650 power doubler addresses both of these customer concerns, as does the entire line-up of RFMD’s GaN-based amplifiers. The RFPD2650 supplies a minimum gain of 21dB over the entire 45-1003MHz frequency range. It can deliver up to 20% power or energy savings with no performance penalty in HFC networks, or it can be configured to provide 3dB higher distortion level performance with the same power consumption. With this unique blend of performance attributes, the RFPD2650 enables MSO system designers to select either industry-leading or energy saving (“green”) performance -- all while maintaining the ease of use infrastructure OEMs have come to expect from industry-standard SOT115J packaged amplifier modules. The RFPD2650 leverages GaN HEMT and GaAs pHEMT technology to provide the industry’s best distortion performance, enabling longer range transmission. Maximum current is 450mA, and current consumption can be reduced dramatically to less than 370mA for applications requiring reduced distortion performance. Programmed to match the distortion level of competitive devices, RFMD’s RFPD2650 delivers two watts of power consumption savings. The RFPD2650 is available now in sample or production quantities and is priced at $26.50 in quantities of 5,000. RF Micro Devices is a global leader in the design and manufacture of high-performance semiconductor components. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets.



RF Micro Devices Expands High Power GaN Product Portfolio RF Micro Devices, designer and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD(R) has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.

RFMD’s unmatched power transistors support “green” architectures that reduce energy consumption, improving thermal management and network efficiency for network operators. The RF3934 operates over a broad frequency range (DC to 3GHz) in a single amplifier design. The high peak efficiency of >65% minimizes thermal management demand and improves overall power consumption requirements for end customers. Additionally, ease of design implementation and integration is enhanced through the incorporation of simple, optimized matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier. The RF3934 is packaged in a hermetic, flanged ceramic two-leaded package that leverages RFMD’s advanced heat sink and power dissipation technologies to deliver excellent thermal stability and conductivity.

Jeff Shealy, VP and general manager of RFMD’s Defense and Power business unit, said, “The release of the RF3934 is an important milestone because it is the highest output power device in our UPT family. Furthermore, it is a key building block for our upcoming matched power transistor family, scheduled to be released later this fiscal year.”

Bob Van Buskirk, President of RFMD’s Multi-Market Products Group, said, “Our GaN products offer the added benefit of being produced in the same high volume manufacturing environment as our RFMD cellular products, which translates into industry-leading manufacturing cycle times. We further leverage our internal, high power packaging facility, with military and government security clearances, to enable flexible assembly and test strategies and short learning cycles to support important

aerospace and defense programs.”

The RF3934 is designed in RFMD’s 48-volt high power-density GaN semiconductor process -- featuring a unique combination of high RF power density and efficiency, low capacitance and high thermal conductivity. Such features enable the development of compact and efficient high power amplifiers (HPAs) for a broad range of applications, including public mobile radio (PMR), 3G/4G wireless infrastructure, ISM (industrial scientific & medical), military and civilian radar and CATV transmission networksThe RF3934 is currently available for sampling and mass production. Product datasheets are available at www.rfmd.com

Endwave Introduces DC to 20 GHz GaAs MMIC Distributed PA Endwave Corporation, a provider of high-frequency RF devices and integrated subsystems, has announced its model EWH2001ZZ distributed power amplifier (PA) for commercial, industrial, and military applications from DC to 20 GHz. Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the monolithic-microwave-integrated-circuit (MMIC) distributed PA delivers +26 dBm typical output power at 1-dB compression (P1dB) through 12 GHz +and typically +23 dBm through 20 GHz. The amplifier features impressive +gain and gain flatness over its broad bandwidth, with small-signal gain +of typically 19 dB at 2 GHz and typically 18 dB at 20 GHz, with gain flatness of ±2 dB from DC to 20 GHz. In fact, the broadband amplifier provides usable gain of 10 dB through 30 GHz. In addition, gain remains flat with temperature, with typical temperature-dependent gain variations of only 0.03 dB/°C from DC to 20 GHz and at operating temperatures from -55 to +85°C.

The flat gain and generous output-power levels of the DC-coupled model EWH2001ZZ distributed PA make it ideal for applications in broadband commercial wireless and optical communications systems as well as in military radar and electronic-warfare systems. It offers outstanding linearity, with



an output third-order intercept point (IP3) of typically +33 dBm to 12 GHz and typically +31 dBm to 20 GHz. For applications requiring a wide dynamic range, it can handle high input signal levels to +23 dBm with minimal distortion, and maintains a low noise figure of typically 3.5 dB through 12 GHz and typically 5.0 dB through 20 GHz. The distributed PA produces saturated output power levels of typically +28 dBm to 12 GHz and typically +25 dBm to 20 GHz.

The model EWH2001ZZ incorporates built-in temperature sensing circuitry to monitor device temperature under changing operating conditions. The versatile distributed PA is internally matched to 50 ohms and is unconditionally stable. It has typical input return loss of 15 dB through 12 GHz and 12 dB through 20 GHz, with typical output return loss of 14 dB through 12 GHz and 12 dB through 20 GHz. It operates with typical drain voltages of +7.5 to +8.5 VDC and typical supply current of 270 to 290 mA.The broadband amplifier requires gate voltages of typically -0.55 and +3 VDC, which can be varied to achieve a gain-control range of about 10 dB.

Model EWH2001ZZ is supplied as a RoHS-compliant die measuring 3.12 x 1.63 x 0.1 mm. The MMIC PA is rated for storage temperatures from -65 to +150°C. It is 100% DC and RF tested and visually inspected to MIL-STD-883, Method 2010 requirements. For more information on the model EWH2001ZZ GaAs MMIC distributed PA, and to download datasheets on this amplifier or any of the company’s other MMIC and module products, visit www.endwave.com.

Highly Efficient & Linear Power Amp for WiMAX CPE & Small-Cell Infrastructure Markets introduced from ANADIGICS New AWB7221 Device Delivers High Performance for Broadband Wireless Home Connectivity and Expands the Reach of 3G and 4G Network Coverage

Responding to demand from service providers to expand the footprint of high performance wireless broadband, ANADIGICS, Inc. today introduced a new power amplifier for use in WiMAX customer premises equipment (CPE) and small cell infrastructure solutions. ANADIGICS’ AWB7221 is the most power efficient PA available for WiMAX CPEs, and also enables cost efficient femtocells for 3G and 4G networks.

The high linear transmit power of the AWB7221 enables CPEs with a powerful uplink that supports wide, high data rate network coverage. The device’s excellent power efficiency reduces the overall power consumption of a CPE or femtocell, leading to a reduction in system cooling requirements and less costly designs. The AWB7221 PA enhances network performance in key global WiMAX markets such as North America, Japan and Korea, and also supports new LTE or TD-LTE networks in the 2.30 GHz to 2.70 GHz frequency bands.

“A growing consumer appetite for enhanced wireless broadband applications is creating more demand for customer premises and small cell infrastructure equipment that delivers faster data speeds over greater distances,” said Joe Cozzarelli, Senior Director, Broadband RF Product Line, ANADIGICS. “Our AWB7221 PA provides a practical and effective way for service providers to answer this demand, and to continue to roll out 4G to a broader market.”

WiMAX CPEs provide an alternative to DSL and cable modems, and also play a key role in the transition to 4G, by offering consumers high speed wireless connectivity for their homes, shops or businesses. According to industry organization



WiMAX Forum, nearly 600 WiMAX (fixed and mobile) networks have been deployed in 149 countries, with network coverage forecasted to be available to 800 million potential subscribers worldwide by the end of this year.

As WiMAX and other 4G networks continue to deploy worldwide, and 3G service providers seek to enhance their network coverage, the demands for small cell base stations such as femtocells and picocells will grow tremendously. Industry analyst In-Stat asserts that that small cell base stations are “vital to 4G deployment,” forecasting that femtocell revenue will grow at an 83% compounded annual rate over the next four years, and that the number of carrier-installed metropolitan picocells will increase at a 378% compounded annual rate over the same period.

ANADIGICS’ AWB7221 power amplifier is an optimal solution for current and next-generation CPEs and small cell base stations for 3G and 4G networks. Engineering samples are available upon request.

Key AWB7221 Facts and Highlights:

* Manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness.• Delivers up to +28 dBm of linear WiMAX power with exceptionally low EVM, and also supports LTE air interfaces.• Operates at 17.5% power added efficiency at rated output power. * Supports the full 2.30 GHz to 2.70 GHz band.• Incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 ? system.

Optical Leaders Talk Industry Trends in First Episode of New JDSU Campaign New Marketing Campaign “JDSU Industry View” Designed to Share Thought Leadership from JDSU Customers and Experts in Various Industries from Around the World

JDSU today announced the launch of a new

marketing campaign on jdsu.tv called “JDSU Industry View,” designed to showcase leaders from various industries as they discuss timely topics and trends. The first episode, called “Optical Leaders Talk Industry Trends,” highlights several JDSU customers and experts in Optical Communications as they discuss industry challenges, hot topics and provide a future outlook of the market.

“JDSU serves hundreds of leading companies that employ the best and brightest experts in many different industries,” said Jim Monroe, senior director of Corporate Marketing and Communications at JDSU. “The goal of the Industry View campaign is to share thought leadership and perspectives from our customers and other experts as we interact with them around the world.”

The first segment of Industry View was filmed during the annual European Conference and Exhibition on Optical Communications (ECOC) 2010 held during the third week of September in Torino, Italy. It addresses how the optical communications industry can support increasing network bandwidth and speed requirements as consumers and businesses continue to demand faster and higher quality content via the internet. Key areas discussed include:

Updates about the move towards faster optical network speeds from 40G to 100G and beyond. Perspectives on flexible solutions that will be required to create optical networks of the future, also known as Self Aware Networks. Positive outlooks on the increasing health of the optical industry. “I think we are in a time when the optical communications industry is reinvigorated because we need more performance, we need new ideas, and we’re not exclusively focused on making last year’s technology at a lower cost,” said Brandon Collings, CTO of Optical Communications at JDSU. “There’s a lot of excitement and new ideas happening, and I think this first Industry View episode is a great way to convey what matters most to industry leaders in the optical communications arena.”


product news ♦ Lasers

Product News Lasers

Modulight Reveals 650nm to 1550nm OEM Lasers The single-emitter based laser systems are ideally suited to medical and industrial applications. Modulight’s sub-systems produce up to 1.5 W optical power and cover most of the conventional wavelengths between 635 nm and 1550 nm. Standard configuration is based on Modulight Butterfly module line-up options and includes integrated laser driver, controller, cooling, and external modulation interface. Customizable options include, but are not limited to, wavelength, power, and output specification, control interface, form factor, and various operating parameters.

Currently the following wavelengths and maximum powers are offered with standard configurations: * 635 nm, 500mW * 650/665 nm, 750 mW * 808 nm, 1.5 W * 940/980 nm, 1.5 W * 1470/1550 nm, 500 mW ‘We are excited about this new release. This is clearly yet another way for us to lower the threshold of using our lasers. By presenting a standard OEM system level platform for single-emitter lasers, our customers benefit from existing versatile design, in-house customization capability from chip to system level, and very large wavelength range from 630nm to 1650nm. We have supplied

a number of custom OEM systems already for a few years, but we believe that a standard solution will enable larger customer base within equipment manufacturer market. The OEM systems have been designed to enable simple integration interface both mechanically and electrically.’ comments Sampsa Kuusiluoma, Modulight’s Product Line Manager for Integrated Laser Solutions. Modulight produces various types of lasers from visible to infrared wavelengths with output power levels from milliwatts to over hundreds of watts. The firm provides laser solutions from design and manufacturing of laser diodes to OEM-based optical sub-systems and turnkey laser systems. Modulight owns and operates a semiconductor fab in Tampere, Finland and has a fully owned subsidiary Modulight USA located in San Jose, California.

Quantum dot semiconductor laser technology wins Green IT Award QD Laser, Inc., Fujitsu Limited, and the University of Tokyo today announced that, as part of the Green IT Awards 2010 granted by Japan’s Green IT Promotion Council, they have been awarded the Ministry of Trade, Economy and Industry Minister Award in the category of “Savings in IT-related Energy Consumption” for their quantum dot semiconductor laser technology. The award recognizes quantum dot laser technology as making a significant contribution to the energy efficiency of IT equipment.

About the Green IT AwardThe Green IT Award was established to honor contributions to the development, expansion, and application of IT equipment, services, and solutions that reduce society’s energy consumption, with the aim of increasing the prevalence of green IT and bringing about a society that both preserves the environment and achieves economic growth.

Product RecognizedQuantum dot (QD) lasers are state-of-the-art semiconductor lasers which are formed using quantum dots(1) on the surface of a semiconductor substrate and which fully leverage the so-called quantum effect(2).

Solar ♦ product news


QD lasers feature revolutionary advantages over other types of semiconductor lasers, including lower power consumption, superior temperature stability, and higher temperature tolerance. The lasers will make it possible to conserve energy as energy usage increases with the expansion of the Internet and improvements in the capabilities of ICT equipment.

The technology was proposed in 1982 by Professor Yasuhiko Arakawa, Director of the Institute for Nano Quantum Information Electronics, The University of Tokyo(3), and was subsequently developed through an industrial-academic collaboration between Fujitsu and the University of Tokyo. QD Laser, Inc. was established to commercialize the technology and the company has begun the world’s first mass production of QD lasers for use in optical communications.

The Green IT Award recognized the advanced capabilities of this device technology, as well as its wide range of potential medium- to long-term applications. At the same time, it also praised the creative thinking that led researchers to bring about innovation by leveraging the principles underlying the device, as well as the achievements resulting from this innovation and the 15-year-long industrial-academic collaboration.

Notes1 Quantum dot:A grain-like structure measuring between a few nanometers to several tens of nanometers in size.2 Quantum effect:Atoms that are confined to a narrow region (on the scale of a few nanometers to several tens of nanometers, 1 nanometer = 1.0 × 10-9 meters) can only assume discrete energy levels. The quantum dot laser technology leverages this property to prevent the flow of excess electrical current, allowing only the minimal necessary current, thereby making it possible to decrease the laser’s energy loss and enhance its temperature stability. 3 Y. Arakawa et al.:Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett., Vol.40, p.939-941(1982)

Product News Solar

NanoMarkets Announces New Report on TFPV Materials The firm says First Solar has established that CdTe can be a cost leader for solar panels. TFPV, seems increasingly well suited to use in building integrated PV one of the fastest growing segments of the PV segment as a whole. NanoMarkets, a lprovider of market research and analysis for advanced materials and emerging energy and electronics markets has added a new report to its portfolio entitled, “Thin-Film Photovoltaics Materials Markets, 2011 and Beyond.” The report will be available November 29th and provides the latest in NanoMarkets’ ongoing coverage of the markets for materials for the thin-film photovoltaics (TFPV) space. Much has happened in the market since the firm’s previous materials market assessment. First Solar has established that CdTe can be a cost leader for solar panels while TFPV, because of its inherent flexibility, seems increasingly well suited to use in building integrated PV one of the fastest growing segments of the PV segment as a whole. At the same time, the silicon shortage has gone away and with it one of the most persuasive arguments for using a TFPV technology rather than conventional crystalline silicon PV. In addition, the ongoing worldwide financial crisis has dampened the enthusiasms for “green tech” by consumers, investors and cash strapped governments. The report assesses and quantifies where the money will be spent on the major materials that go into TFPV in the next eight years. It also identifies the materials strategies of the key cell and module players in TFPV, as well as the product/market strategies of the key materials firms supplying into this segment.


product news ♦ Solar

Included are eight-year forecasts of volumes and revenues for the materials used by the three main thin-film photovoltaic (TFPV) technologies; CIGS, thin-film silicon, and CdTe. Finally, the report provides market analysis of both the absorber and electrode materials, as well the latest materials-related PV developments such as the use of nanocrystalline silicon, PV inks, flexible substrates and advanced antireflection materials and barrier films. NanoMarkets tracks and analyzes emerging market opportunities created by developments in advanced materials. The firm is a recognized authority in the area of photovoltaics and particularly thin-film related markets.

Apollo Solar Appoints New Chief Executive Officer The firm has employed Jingong Pan to further develop the renewable energy industry in China. Apollo Solar Energy, a leading vertically integrated miner, refiner and producer of high purity tellurium (Te), tellurium-based compounds and other metals for the solar photovoltaic (PV) industry and specific segments of the electronic materials market worldwide, has appointed Jingong Pan as its Chief Executive Officer. Pan will be entitled to receive an annual base salary of RMB 660,000 and has been granted options to acquire 1,000,000 shares of the Company’s common stock which will vest in equal annual installments over the thirty-six month period. Pan, aged 45, has been a member of the Company’s board of directors since March 2010 and is currently an Adjunct Professor at the New Jersey Institute of Technology. From 2000 to 2002, Pan served as a General Manager of Flaming Sun (USA) Corp., and from 1997 to 2000, served as VP of Anton USA (Bank of China Group). Pan received a Bachelor of Science degree from the Harbin Institute of Technology, Masters degrees from the Harbin Institute of Technology and the New Jersey Institute of Technology, and a Ph.D. from the New Jersey Institute of Technology.

“We are very pleased to appoint Dr. Pan as our new Chief Executive Officer,” Zhiming Cao, chairman of the nomination committee of board of the Company commented, “since Dr. Pan has tremendous knowledge about solar PV industry and an excellent record of management experience in both China and US. We expect Dr. Pan will play a leading role in the Company and promote Apollo’s management to a new level.” “I’m also very pleased to take the position of Chief Executive Officer of Apollo,” Jingong Pan stated. “It is an honor to work with Apollo in further developing the renewable energy industry in China. I selected Apollo as a strategic partner for my career development because I believe Apollo is a pioneer in the thin film solar PV section with significant resources, technologies and network.” Apollo Solar Energy, through its wholly owned subsidiary, Sichuan Apollo Solar Science and Technology is primarily engaged in mining, refining and producing high purity tellurium (Te), tellurium-based compounds and other metals for thin film solar PV industry as well as for specific segments of the electronic materials market. The Company’s products include CdTe thin-film compounds, CIGS thin-film compounds, ultra- high purity metals and commercial-purity metals.

Ultrasonic Systems launches PV-480 system for CdTe module coating applicationsUltrasonic Systems, Inc., a manufacturer of high-performance ultrasonic spray coating equipment, announces the release of its PV-480 system for CdTe module coating applications. The PV-480 leverages USI’s proprietary, nozzle-less ultrasonic spray head technology for thinner, more uniform coating deposition vs. conventional spray technologies. Optimized for high-volume, in-line manufacturing, the PV-480 can process glass plates up to 48 inches wide at speeds of up to six feet per minute.

The PV-480 delivers liquid coating with transfer efficiencies in excess of 90%, utilizing a traversing Ultra-Spray® blade head. This versatile system is ideal for the application of cadmium chloride



solution and anti-reflective coatings, as well as other low viscosity liquids. The system can be operated in-line or as a stand-alone process, and is easy to control via touch screen user interface. USI coating systems are industry proven with more than 2,500 systems installed worldwide in multiple markets.

“We are pleased to announce the launch of our new PV-480 thin-film coating system,” said Stuart Erickson, President of Ultrasonic Systems. “The PV-480 extends our unique nozzle-less spray head technology to glass plate applications critical to CdTe thin-film solar production.”

Luminus’ Customer Martin Professional Wins 2010 Danish Industry Prize The new MAC 350 Entour used in entertainment lighting features award-winning Luminus PhlatLight LEDs. Luminus Devices, developer and manufacturer of big-chip PhlatLight LEDs, has announced that its CBT-90 white PhlatLight LEDs are powering Martin Professional’s new MAC 350 Entour luminaire. The MAC 350 Entour is the entertainment lighting industry’s first LED alternative to traditional high intensity discharge (HID)-based profile fixtures. It exceeds traditional 300 watt HID fixtures in brightness and comes equipped with seven CBT-90 white big-chip LEDs and has a total light output of 8,000 lumens and a lifespan of more than 25,000 hours. These light levels were previously achieved only with high energy discharge lamps.

“We are extremely happy to win the prestigious Danish Industry Award and the unparalleled levels of brightness and energy-efficiency in PhlatLight LEDs give Martin Professional the ability to develop new, more cost-effective entertainment industry based lights that are ideal for a host of temporary and permanent environments,” said Christian Engsted, CEO of Martin Professional. “We look forward to developing a wide range of next-generation products utilizing Luminus’ big-chip LEDs.” The MAC 350 Entour is well suited for touring and event environments, and permanent venues such as theatres, TV and broadcast studios, sporting arenas, education facilities, night clubs, ballrooms and cruise ships, where high-brightness and performance is needed. Until now, profile lights have used traditional HID lamps that are costly to replace, contain mercury and have a life span of only 3,000 hours, necessitating frequent replacement. “Congratulations to Martin Professional on winning a top industry award for its new MAC 350 Entour. They are a great company with great products and we are honored to be part of their lighting solutions,” said Keith T.S. Ward, president and CEO, Luminus Devices. “Luminus’ big-chip LEDs offer unmatched brightness, lower overall cost and its 8,000 lumens of total output are the highest in the industry today.” Luminus Devices develops and manufactures high performance solid-state light sources – PhlatLight LEDs - for a variety of lighting applications. Its headquarters and primary manufacturing facilities are located in Billerica, Massachusetts, U.S.A.

Ascent Solar Launches USB OEM Ready Modules for Portable & Remote Power With the growing need for power on the go, the USB integrated CIGS modules should meet demands and the product is expected to be an important solution for off-grid portable power. Ascent Solar Technologies, a developer of flexible thin-film photovoltaic modules is launching its OEM ready USB charger integrated modules for portable,



off-grid charging solutions. The integration of the USB outlet makes it a universally acceptable application that can meet the need for a diverse and growing market for portable power needs in developed and emerging market countries. Solar Power International is expected to attract more than 22,000 professional attendees from 70 countries. Rafael Gutierrez, SVP of Sales and Marketing for Ascent Solar, stated, “With the growing proliferation of power on the go needs to meet the rising electronic application from cell phones to other personal electronic devices, our USB integrated light-weight, rugged and efficient CIGS modules can meet this demand. This OEM product will be an important solution for our off-grid portable power portfolio.” Ascent Solar Technologies is a developer of thin-film photovoltaic modules with substrate materials that can be more flexible and affordable than most traditional solar panels. Ascent Solar modules can be directly integrated into standard building materials, commercial transportation, automotive solutions, space applications, consumer electronics for portable power or configured as stand-alone modules for large scale terrestrial deployment. Ascent Solar is headquartered in Thornton, Colorado.

3M Unveils ‘3M Ultra Barrier Solar Film’ for CIGS and CdTe Solar Modules The moisture resistant front-side film will support the scale-up of flexible CIGS, CdTe, and OPV solar modules. 3M has introduced its 3M Ultra Barrier Solar Film for flexible Copper Indium Gallium Selenide (CIGS), Cadmium Telluride (CdTe), and Organic Photovoltaic (OPV) solar modules. 3M Ultra Barrier Solar Film is highly transparent, provides moisture vapor transmission rates (MVTR) below 5 * 10-4 g/m(2)/day, and demonstrates excellent durability. The product is the result of more

than a decade of development in transparent barrier technology as well as over 45 U.S. patents and patent-pending applications covering construction, materials and processes. The company also plans to begin high-volume production of the Ultra Barrier Film to supply 3M’s global thin film solar customer base, including manufacturers throughout the United States, Europe and Asia. Designed to address the needs of flexible thin film solar manufacturers, 3M Ultra Barrier Solar Film acts as a replacement for glass with high light transmission, superb moisture barrier performance, and is excellent in harsh environments.. Compared with glass-glass modules, large area, light weight flexible PV modules manufactured with 3M Ultra Barrier Solar Film can achieve lower balance of systems (BOS) costs by requiring less installation time, removing the need for metal racking, and reducing logistics expenditures. 3M Ultra Barrier Film also enables lower module manufacturing costs by allowing manufacturers to commercialize large area modules, effectively reducing fixed costs associated with module manufacturing, assembled in a continuous roll-to-roll process. “3M Ultra Barrier Solar Film is a great illustration of the value that 3M is bringing to the Renewable Energy market by leveraging its broad technology portfolio to commercialize innovative products that enable our customers to accelerate their efforts to achieving grid parity,” said Derek DeScioli, Business Development Manager for the 3M Renewable Energy Division. “High efficiency flexible solar modules manufactured with 3M’s Ultra Barrier Solar Film not only have the potential to drastically reduce the total system costs for rooftop solar installations, but also have an array of niche applications where our customers can take advantage of the unique module form factor.” 3M’s Renewable Energy Division offers a robust portfolio of new and existing products, bringing more than 100 years of combined expertise in coatings, film, tape, adhesive and optical technologies to the rapidly expanding renewable energy and energy efficiency markets worldwide. In addition to the company’s world-class R&D facilities, 3M works closely with leading national



labs to develop and refine its energy generation and energy conservation technologies. 3M has expanded its global manufacturing capabilities for Renewable Energy Division products several fold in recent years to bring key products to commercial-scale production to meet increasing market demand. 3M will be showcasing the Ultra Barrier Solar Film and additional solar component technologies at booth #407 at Solar Power International. 3M produces thousands of innovative products for dozens of diverse markets. It applies more than 40 distinct technology platforms -- often in combination -- to a wide array of customer needs. With $23 billion in sales, 3M employs 75,000 people worldwide and has operations in more than 65 countries.

Emcore Appoints Mark Weinswig as Chief Financial Officer Weinswig has previously held various leadership positions with technology companies including Coherent and Avanex (now Oclaro). Emcore, a leading provider of compound semiconductor-based components and subsystems for the fiber optic and solar power markets, has announced that its Board of Directors has appointed Mark Weinswig, as Chief Financial Officer, effective October 11, 2010, when he started with Emcore. Reporting to the CEO, Weinswig will be responsible for the Company’s finance and accounting functions. Prior to joining Emcore, Weinswig held various leadership positions as Controller, Executive VP of Business Development, and Interim CFO with technology companies including Coherent and Avanex Corporation (now Oclaro). He was previously at Morgan Stanley’s Institutional Equity Research Group, where he covered the telecommunications equipment industry, and at PriceWaterhouseCoopers as an auditor. Weinswig received an MBA from the University of Santa Clara and a BS in business administration from

Indiana University. He has earned the CFA and CPA designations. “We are extremely pleased that Mark is joining us as CFO. Mark brings a broad background of both finance and accounting, as well as a deep understanding of the fiber optics industry. I am confident that he will be able to make strong contributions to the Company through his strong leadership, accounting knowledge, and hands-on and diligent work ethic,” said Hong Q. Hou, CEO of Emcore. Emcore offers a broad portfolio of compound semiconductor-based products for the broadband, fiber optics, space and solar power markets. The firm’s Fiber Optics segment offers optical components, subsystems and systems for high speed data and telecommunications networks, cable television (CATV) and fiber-to-the-premises (FTTP). Emcore’s Photovoltaics segment provides products for both space and terrestrial applications. For space applications, the firm offers high efficiency gallium arsenide (GaAs) solar cells, covered interconnected cells (CICs) and panels. For terrestrial applications, Emcore is adapting its high-efficiency GaAs solar cells for use in solar concentrator systems.

First Solar leads order increases First Solar Announces 380 MW increase in orders for 2011

First Solar has announced that it has signed agreements with seven key customers for a 380 megawatt increase in orders for 2011 over previously announced volumes. The expanded contracts are with existing customers and will serve predominantly European markets. “Our customers continue to expect robust growth in the market for solar electricity in Europe next year,” said Stephan Hansen, managing director of First Solar’s European sales and customer service organization. “The additional volumes will allow First Solar to continue to scale and contribute to making solar electricity more affordable globally.” The new



contracts were all signed in recent weeks and follow announcements that First Solar is planning to add manufacturing capacity in Germany and France in order to better meet local demand and to encourage the development of the market for utility-scale solar electricity.

Spire claims CPV record Spire Semiconductor produces a world-record 42.3% efficient CPV cell

Spire Semiconductor, LLC, a subsidiary of Spire Corporation has produced a world record efficiency concentrator photovoltaic (CPV) solar cell. The 0.97cm2 cell was measured by the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) to have a peak efficiency of 42.3% at 406 suns AM1.5D, 25C (42.2% at 500 suns).

Edward D. Gagnon, General Manager of Spire Semiconductor, LLC, stated, “In early 2009, Spire Semiconductor was awarded an NREL Photovoltaic (PV) Incubator subcontract to develop a high efficiency triple junction, gallium arsenide (GaAs) cell. In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency. This is a remarkable achievement by our technical team. NREL has been extremely helpful during the entire program, with timely responses to our confirmation requests for accurate efficiency

measurements. Their continued support enabled us to validate our new bi-facial cell architecture. This higher efficiency, next generation GaAs CPV cell platform is now available commercially to the concentrator systems providers.” Roger G. Little, Chairman and CEO of Spire Corporation, said, “We are pleased to reach the record high CPV cell efficiency. The availability of this new high-efficiency cell will advance next-generation CPV system performance and reduce system cost for manufacturers, helping to move solar energy ever closer to the goal of grid parity.”

PLANSEE offers MoNa sputtering targetsSodium (Na) is an important factor for the efficiency of CIS/CIGS solar cells. Sodium doped molybdenum layers can easily be integrated into the existing solar cell production process and guarantee stable and reproducible results.

In CIS/CIGS solar cells the soda-lime glass substrate often functions as the sodium source from which the material diffuses through the molybdenum back contact into the absorber layer. Since this process is difficult to control and does not guarantee a homogenous sodium distribution, many producers use different sodium sources. They apply Na by means of an additional layer or deposit it together with the absorber materials. Both methods are complex and highly prone to error.

Solar cell producers now have an easy alternative at hand: By sputtering a layer of sodium doped molybdenum, the amount of sodium in the absorber layer can exactly be controlled and reproduced. For this standard process in the CIS/CIGS production route, PLANSEE, a manufacturer of thin-film materials, offers MoNa sputtering targets with full density, high purity and a uniform and fine grained microstructure. Tests in cooperation with the Swiss EMPA institute have already proven their benefits in practice: With Na doped molybdenum layers the efficiency of CIGS solar cells could be significantly improved. For more information on PLANSEE’s thin-film materials for CIS/CIGS and CdTe solar cells please go to www.plansee.com or contact [email protected].



PLANSEE is one of the leading manufacturers of products made from refractory metals and metallic composite materials. The privately owned company has been manufacturing innovative powder-metallurgically processed high-performance materials for over 85 years, and covers the whole production process, right from the raw material to the finished product.

Ascent Solar Signs Distribution Agreement with DisaSolar of France Ascent Solar Technologies, Inc., a developer of flexible thin-film solar modules, have announced that it has signed a distribution agreement with DisaSolar, a newly established subsidiary company of Megamark/DisaTech Group, who provide complete solutions in architectural, industrial and corporate signage in France and other European Countries. DisaSolar will begin distribution of Ascent Solar’s lightweight, flexible, high-power thin-film CIGS modules for off-grid applications integrating flexible solar panels into passenger train roofs and commercial signage structures.

The agreement with DisaSolar gives Ascent Solar access to additional emerging market segments in Europe. Recently, the two companies successfully demonstrated PV module integration into train rooftops in partnership with French regional rail company SNCF. The unique characteristics of Ascent Solar’s flexible, lightweight CIGS modules compliment DisaSolar’s heritage in system integration for transportation and corporate signage applications enabling novel applications in emerging segments.

DisaSolar President Stephane Poughon stated, “Ascent Solar has a flexible, light-weight, CIGS solar module technology that is uniquely qualified to open new opportunities in everyday power generation. We are pleased to distribute and promote high-quality Ascent Solar products in France. Leveraging the expertise of Megamark/DisaTech Group combined with the quality and performance of Ascent Solar products, DisaSolar aims to quickly become a leading French provider of innovative integrated solar products.”

Ascent Solar President and CEO Farhad Moghadam stated, “We are pleased to announce our agreement with DisaSolar. This relationship will give us access to new and emerging market opportunities in transportation that could provide significant growth over the coming years in France as well as other countries across the globe. We also expect that other products in our lineup of flexible, lightweight CIGS modules will be marketed through this relationship.”


product news ♦ Power electronics

Product News Power electronics

EPC eGaN Products Win EDN China Innovation Award Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.

“Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor’s Choice Award by EDN China Innovation Award’s panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC’s potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap”, said William Zhang, Publisher of EDN China.

“We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.

Nitronex GaN Power Transistor Has “Leading Thermal Performance” The new generation platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars.

Nitronex, a designer and manufacturer of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, and industrial & scientific markets, has developed a new generation of power transistor platform technology. The technology hopes to meet the growing demand for wideband, high power and robust RF power amplifiers. The new generation platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars. The primary benefit of products based on this platform is very low thermal resistance, which results in higher output power and efficiency in broadband applications combined with improved ruggedness.

Nitronex, a designer and manufacturer of gallium nitride (GaN) based RF solutions for

Power electronics ♦ product news


high performance applications in the defense, communications, and industrial & scientific markets, has developed a new generation of power transistor platform technology. The technology hopes to meet the growing demand for wideband, high power and robust RF power amplifiers. The new generation platform is specifically designed to meet the stringent performance requirements of military communications, jammers and radars. The primary benefit of products based on this platform is very low thermal resistance, which results in higher output power and efficiency in broadband applications combined with improved ruggedness.

GeneSiC Releases Multi-kHz SiC Thyristors in US The ultra-high voltage Silicon Carbide (SiC) thyristors for use in power electronics for Smart Grid applications are targeted at US researchers. GeneSiC Semiconductor has unveiled a family of 6.5kV SCR-mode Silicon Carbide thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (SiC) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Ranbir Singh, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.” Silicon Carbide based thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage

power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. GeneSiC also points out that SiC based thyristors offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC thyristors. These first generation SiC thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC thyristors. “ “We intend to release future generations of SiC thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures,” Singh concludes. Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring


product news ♦ Power electronics

qualified personnel in power-device and detector design, fabrication, and testing.

20W GaN PA for defense communications systems TriQuint Semiconductor, RF products manufacturer and foundry services provider, has released a new state-of-the-art gallium nitride (GaN) power amplifier with high power and efficiency for defense and commercial communications.

The TGA2572 delivers 20W for Ku-band (14-16 GHz) defense and commercial communications systems. The new device is fabricated using TriQuint’s production-released GaN on SiC process; it typically offers 30% PAE and 24dBm of small signal gain. Offered in die and packaged forms, TGA2572 samples will be available in early 2011. Contact product marketing for details.

“TriQuint’s gallium nitride portfolio offers the performance and reliability that defense and aerospace customers demand,” remarked Grant Wilcox, TriQuint Marketing Manager. “Our new TGA2572 delivers high gain as well as excellent power added efficiency. As a leader in both GaN and GaAs technologies, you can rely on TriQuint to provide the design assistance, service and product leadership demanded for high-reliability mission effectiveness.”

TriQuint’s expertise in gallium nitride (GaN), gallium arsenide / high-voltage GaAs pHEMT, surface acoustic and bulk acoustic wave (SAW / BAW), low-cost packaged devices and monolithic microwave integrated circuits (MMICs) has made us a leading supplier of RF system components to Boeing Company, Lockheed Martin Corporation, Northrop Grumman, Raytheon and other major defense contractors. TriQuint supplies RF innovation for consumer retail products including mobile devices, wireless LAN, triple-play CATV systems, optical and

wireless infrastructure applications.www.triquint.com/rf.

Device Models for Enhancement Mode GaN Transistors Efficient Power Conversion Corporation (EPC) have announced that the company has made available updated device models for all of its enhancement mode gallium nitride (eGaNTM) transistors on its web site.

These updates improve the robustness of the models without changing the core equations. Performance predictions with the new models will be consistent with previous versions of EPC SPICE models.

TSPICE, PSPICE, LTSPICE, and Spectre device models are provided to help designers of advanced eGaN-based power conversion circuits and systems understand the value of the EPC eGaN power transistor family and reduce their time-to-market with benchmark products.

EPC has also written an application note to help users understand eGaNTM transistor capabilities and the applicability of the SPICE models. This application note is available at http://epc-co.com/epc/documents/product-training/Circuit_Simulations_Using_SPICE.pdf.

Power Integrations Announces Strategic Investment in SemiSouth Laboratories Power Integrations, involved in high-voltage integrated circuits for energy-efficient power conversion,have announced a strategic investment in SemiSouth Laboratories, Inc., a Mississippi-based manufacturer of high-voltage silicon-carbide (SiC) semiconductor devices.

Power Integrations’ commitment of $30 million,

Power electronics ♦ product news


which includes an equity investment in SemiSouth, a technology license and other financial commitments, will help drive the continued expansion of SemiSouth’s SiC fabrication facility and spur continued growth of clean-tech jobs in Mississippi. The companies will collaborate to drive adoption of SemiSouth’s SiC technology, which enables ultra-efficient power conversion for solar and wind inverters, hybrid/electric vehicles and other applications that benefit from exceptionally high energy efficiency.

The new relationship will be formally announced today at SemiSouth’s Starkville headquarters, located in the Thad Cochran Technology Park. A number of notable public officials will be on hand for the announcement, including Mississippi Governor Haley Barbour, U.S. Representative Gregg Harper, and Dr. Mark Keenum, president of Mississippi State University.

“SemiSouth has made impressive breakthroughs in the development of silicon-carbide technology, attaining exceptionally high levels of efficiency and establishing SiC as an enabler of clean technologies such as solar energy and hybrid/electric vehicles,” stated Balu Balakrishnan, president and CEO of Power Integrations. “With a mutual focus on energy-efficient high-voltage semiconductor technology, Power Integrations and SemiSouth are natural strategic partners. We are particularly enthusiastic about investing in Mississippi’s emerging high-tech sector, where strong support from government and the academic community has created an environment highly conducive to innovation and private-sector investment.”

“Today’s announcement is a testament to SemiSouth’s success and to Mississippi’s growing stature as a center for technology and innovation,” said Mississippi Governor Haley Barbour. “As a leader in automotive manufacturing, Mississippi understands the strategic importance of advanced power electronics, which are becoming a critical part of the supply chain as the industry migrates to hybrid/electric vehicles. Home-grown innovations like SemiSouth’s SiC technology represent a tremendous economic opportunity for our state. We welcome Power Integrations’ involvement in SemiSouth and Mississippi’s clean-tech initiatives.”

Added Kenney Roberts, president and CEO of SemiSouth, “SemiSouth has recently been

recognized by its customers for having world-record, cost-effective, energy-efficient power semiconductor electronic products based on SiC technology. In response to unprecedented global demand for our products in energy-sensitive markets such as solar inverters, server power supplies, wind inverters, and electric vehicle development, we needed to find the right investor willing to share our vision of expansion. We welcome Power Integrations’ investment in SemiSouth’s future, to allow us to quickly expand and serve our customers on a much broader scale.”

“I applaud SemiSouth for their success in creating new clean-tech jobs for Mississippians and helping transform our state into a technology hub that will drive the future’s renewable energy technologies,” said U.S. Representative Gregg Harper, a freshman from Mississippi’s Third Congressional District. “Working in tandem, SemiSouth and Power Integrations are fostering the development of clean technologies that will provide renewable energy solutions throughout the world.”

Founded in 2000 as a spin-out from Mississippi State University, SemiSouth is a privately held, venture-backed semiconductor company with more than 20 U.S. patents in the emerging field of high-efficiency silicon-carbide power devices. The company’s products, which include 1200 V and 1700 V transistors as well as high-voltage diodes and power modules, enable ultra-efficient power conversion and power management in applications ranging from three kilowatts to 100 kilowatts today, with products in development to serve applications up to one megawatt. The company operates a 10,000-square-foot clean-room facility at its Starkville headquarters, where it employs more than 70 people.

Power Integrations, based in San Jose, Calif., pioneered the market for high-voltage integrated circuits used in AC-DC power supplies. The company’s EcoSmart(TM) energy-efficiency technology drastically cuts standby energy consumption, the power wasted by electronic products that are plugged in but not in use. The company has sold nearly four billion EcoSmart chips since 1998, saving an estimated $4.4 billion of standby power and preventing millions of tons of carbon emissions. The company’s chips can be found in all manner of electronic products including computers, appliances, mobile-phone chargers, consumer electronics and LED lights.


product news ♦ Equipments and materials

TELEFUNKEN announce availability of in-line Si and SiGe epitaxial deposition service. TELEFUNKEN Semiconductors announces the availability of high quality in-line Si and SiGe epitaxial deposition service for customers, commercial and noncommercial, worldwide to address growing in-line epitaxial layer market requirement for the high speed amplifier and power driver applications.

“We are ready to provide high quality silicon and silicon-germanium epitaxial service to support our 150 mm wafer customers. As we know, epitaxy is a key enabling technology for today’s high performance devices,” said Dr. Volker Dudek, CTO of TELEFUNKEN Semiconductors.

TELEFUNKEN Semiconductors’ state-of-the-art Fab has both single wafer reactors and batch wafer reactors tools to meet various in-line epitaxial requirements. The epitaxial service offers Si epitaxial and ultra-thin SiGe:Si composite layers on buried doped regions. We also provide comprehensive metrology services for our customers. The range of epitaxial thickness can vary from below 20nm to 9μm with resistivity from 0.005 Ωcm to 15 Ωcm. By outsourcing the epitaxial growth process to TELEFUNKEN Semiconductors, customers can benefit greatly from the elimination of expensive equipment investment and significant operation and maintenance costs. Being expert in Silicon Germanium processing and standard epitaxial service, TELEFUNKEN Semiconductors is the best choice for successfully growing semiconductor business. TELEFUNKEN Semiconductors GmbH & Co. KG is certified according ISO 9001:2008 and ISO 14001:2009 since December 2009

Product News Equipment and materialsEdwards Expands ixa Vacuum Pump Family The new stp-iXA2206 and ixa3306 fully-integrated pumps feature superior performance and reduced footprint. Edwards, a leading global supplier of vacuum and abatement equipment and services has expanded its iXA family of magnetically-levitated turbomolecular pumps with the introduction of the STP-iXA2206 and STP-iXA3306 pumps. Developed for solar, glass coating, semiconductor and LCD etch applications, the iXA2206/iXA3306 pumps deliver best-in-class performance superior to that offered by earlier iXA family pumps.

“The new STP-iXA2206/iXA3306 are fully-integrated vacuum pumps that are easy to install and offer a small footprint as an all-in-one solution for all application tools,” said Masahide Tanaka, senior product manager, TMP Business Division, Edwards Japan, Ltd. “The integration of the onboard controller eliminates the need for control unit rack mounting and a connection cable between the pump and the control unit, saving installation

Equipments and materials ♦ product news


time, space and cost. Its compact design and size compatibility with previous models simplifies upgrades from existing pumps.” The STP-iXA3306 offers industry-leading pumping performance. It has a maximum pumping speed of 3200 liters per second and improved throughput performance at high gas flows. The STP-iXA2206 offers the same pumping speed of the earlier STP-A2203, yet the maximum throughput capability has been increased. It features the latest-generation small power supply, which has been incorporated into the popular onboard controller first introduced with the STP-iXA2205 pump. It also includes a temperature management system option to minimize the formation of process-generated byproducts. The pump’s five-axis magnetic bearing system and new motor and drive system ensure long life and low operating costs with maintenance intervals as long as five years. Edwards is a leading global supplier of integrated solutions for the manufacture of semiconductors, flat panel displays, LEDs and solar cells and a leader in vacuum technology for industrial, scientific, process and R&D applications. The company employs approximately 3,000 people worldwide in the design, manufacture and support of high technology vacuum and exhaust management equipment. Edwards invented the concept of the low-maintenance, cost-effective, commercial oil-free ‘dry’ vacuum pump and offers a wide range of other pumping technologies, and related products, supported by an international sales and service organization.

Bronkhorst Introduces CORI-FILL for Small Mass Flow Rates Bronkhorst Cori-Tech B.V., from the Netherlands, has introduced CORI-FILL, a compact solution for fluid dosage, based around the extremely accurate mass measurement of its (mini) CORI-FLOW series of Coriolis-type instruments, for flow rates between 400 mg/h and 600 kg/h.

Developed using innovative hardware and software, CORI-FILL technology features integrated batch counters and the facility to directly control a close-coupled shut-off valve for brief batch sequences down to <0.3secs, a proportional valve for longer sequences, or a liquid pump for dosing without the need for pressurized vessels.

CORI-FILL offers all this functionality, with plug and play simplicity that enables an immediate start to dosage duties after connecting power and fluid accessories, in one compact footprint and from one supplier, with single point responsibility.

In contrast with gravimetric processes using weighing scales, where compounds are dosed one by one, CORI-FILL systems can add all ingredients simultaneously, shortening batch and agitation cycles, as well as improving quality. The amount to be dosed can be easily preset by programming the batch counters via a fieldbus connection, with all the standard digital protocols available.

Due to the small footprint of the (mini) CORI-FLOW instruments, it is possible to fit the flow meter extremely close to the shut-off valve, which results in fast response times and even greater accuracy, since there is a minimal delay effect in the pipeline. It is also possible to mount multiple CORI-FILL assemblies together in highly compact, simultaneous dosing systems, with the absence of moving parts or line intrusions which results in less maintenance and cleaning downtime.



CORI-FILL is designed for batching, blending, dosing, filling, sterilization and could be of interest to MOCVD tool makers. Suitable for all types of liquid additives, including those with entrained air or solids, the Coriolis direct mass measurement method eliminates volumetric variation caused by changing temperatures and densities of ingredients, leading to accurate, repeatable quantities batch after batch.

Altatech’s EyeEdge System Has the Edge on Edge Inspection The firm’s high-throughput optical inspection tool is suitable for inspecting compound semiconductor wafer edges and controlling multi-layer overlap.

Altatech Semiconductor has unveiled its new high-throughput AltaSight EyeEdge inspection system.

The tool is capable of detecting, identifying and generating images of defects as small as 2 microns along the edges of 300 mm semiconductor wafers, including silicon, compound semiconductor, SOI, quartz and transparent substrates.

Bruce Hokanson from the firm has confirmed that the system can accommodate 300mm, 200mm or 150mm wafers.

EyeEdge’s applications include inspecting bare or patterned wafers, through silicon vias (TSVs) used in advanced 3D semiconductor integration, and thin-film layer overlap at the extreme edges (the crown or apex) of wafers.

Available as either a stand-alone tool or as a modular, fully retrofitable enhancement on Altatech Semiconductor’s 300mm AltaSight platform, the new EyeEdge system maximizes device yield and profitability by finding and accurately classifying defects that other inspection schemes cannot.

In addition, EyeEdge’s throughput of 100 300-mm wafers per hour enables it to achieve higher productivity than other inspection systems on the market today.

“We developed EyeEdge based on close communications with our strategic partners in the semiconductor market, whose requirements for critical edge inspection and cost-of-ownership performance are incorporated into this new product,” said Jean-Luc Delcarri, president of Altatech Semiconductor.

The company has installed two beta-site systems at customers’ R&D laboratories, where the equipment is being qualified for use in volume production.

Designed for a wide range of users , from wafer suppliers to integrated device manufacturers (IDMs) and foundries to product development laboratories , EyeEdge is a fully automated defect-classification system.

The standard model comes with three high-speed optical sensors for single-pass inspection. Using Altatech Semiconductor’s proprietary DeepSight technology, these sensors collect sufficient data to define the size, shape and location of defects anywhere within 1.5 mm of a wafer’s edge. EyeEdge then generates a three-dimensional image of each surface anomaly for easy classification.

“The ability to detect minute shifts in optical signals is critically important at the edges of wafers, where thin-film overlapping and delamination issues complicate the inspection process,” Delcarri explained. “More expensive laser-scan inspection systems cannot discriminate between real defects and false, irrelevant signals. Faced with wafer-to-wafer variations, laser systems are not adaptive



enough to continually changing noise/signal ratios. Furthermore, relying on scattered light information limits the ability to accurately classify defects in today’s production environments.”

EyeEdge is designed to accommodate an optional fourth optical sensor to analyze a programmable crown area on a wafer’s frontside edge. While maintaining the system’s processing accuracy and high throughput, this additional sensor enables EyeEdge to measure layer-overlapping control, providing a unique high-speed, low-cost solution to control insulating, barrier and seed layers, copper electroplating and chemical mechanical planarization (CMP), photoresist edge-bead removal (EBR) and edge-cleaning effectiveness.

EyeEdge is a stand-alone system, but can be added as a module onto the AltaSight platform to create a holistic system that can inspect a wafer’s frontside, backside and edge simultaneously using a combination of reflectivity, topographical, dark-field and DeepSight technologies.

“This is another major milestone in our product development roadmap,” said Delcarri. “We have fuelled our innovation with continued customer interaction and partnership and a large breadth of technologies in our IP portfolio. We have quickly converted them into productive products and brought them to the market. This is our DNA, and the demand is out there. As everyone is striving for improved performance, our engineering team, sales and support services are being expanded worldwide to solve our customers’ challenges around the world.”

Incorporated in 2004, Altatech Semiconductor manufactures wafer inspection and analysis, liquid-vaporization CVD, and nanoprinting equipment at its headquarters facility near Grenoble, France’s epicenter of microelectronics production. Led by a management team with more than 30 years of experience in the semiconductor equipment industry, the company is focused on helping customers to achieve the fastest design-to-market cycle times for products serving the emerging semiconductor, MEMS and nanotechnology markets.

Nanometrics Announces Planned Retirement of CFO James P. Moniz, who has provided substantial contributions in bringing Nanometrics to new levels of financial performance and operational excellence, intends to retire on 1 April 2011. Nanometrics Incorporated a leading provider of advanced process control metrology systems, has announced that James P. Moniz, chief financial officer, has informed the company of his intention to retire on April 1, 2011. The company has retained an executive search firm to identify an appropriate successor and Moniz will remain in his role to ensure a seamless transition of the CFO role next year. “I want to thank Jim for his substantial contributions in bringing Nanometrics to new levels of financial performance and operational excellence,” commented Timothy J. Stultz, president and CEO. “I understand and fully support his desire to retire and spend more time with his family in the years to come. In the meantime, Jim will continue to be an integral part of the Nanometrics team, providing strong financial leadership and a smooth transition to our next CFO. Jim has built a strong team and is leaving behind a solid foundation to support our company’s continued growth.” Nanometrics is a leading provider of advanced, high-performance process control metrology systems used primarily in the fabrication of semiconductors, high-brightness LEDs, data storage devices and solar photovoltaics. Nanometrics’ automated and integrated metrology systems measure critical dimensions, device structures, overlay registration, topography and various thin film properties, including film thickness as well as optical, electrical and material properties. The company’s process control solutions are deployed throughout the fabrication process, from front-end-of-line substrate manufacturing, to high-volume production of semiconductors and other devices, to advanced wafer-scale packaging applications. Nanometrics’ systems enable device manufacturers to improve yields, increase productivity and lower their manufacturing costs.



The company maintains its headquarters in Milpitas, California, with sales and service offices worldwide.

Oxford Instruments and Ostendo strengthen links with system sales Oxford Instruments have received a multi system order from Ostendo Technologies Inc (Ostendo), for its industry leading PlasmaPro System100 PECVD deposition and PlasmaPro System100 ICP etch tools.

The multi-wafer batch tools will be used by Ostendo in the development of next generation Solid State Lighting (SSL)-based display technologies and products for commercial and consumer markets.

“Our objective is to achieve efficiencies and cost effectiveness at the material, device and system levels”, says Dr. Hussein El-Ghoroury, the CEO of Ostendo, “We chose Oxford Instruments’ leading edge tools as they offer high throughput, and excellent uniformity in addition to multi-batch capability. Ostendo’s enabling technologies support products that are disruptive in their individual marketplaces, and this will be achieved more effectively with the addition of our Oxford Instruments tools

Earlier this year Ostendo and Oxford Instruments - TDI, part of the Oxford Instruments Group, announced the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. This joint development now provides the opportunity to leading High Brightness Light Emitting Diode (HBLED) and Laser Diode developers to increase optical efficiency significantly compared with structures grown on c-plane GaN substrate

“This latest order from Ostendo reinforces our relationship with this important and innovative SSL display technology provider”, comments Stuart Mitchell, VP Oxford Instruments America Inc., “Oxford Instruments uses innovation to turn smart science into world class products. We are able to offer Ostendo the processes and technologies they require, through our well proven systems, supported

in the field through our excellent global support network.”

Jordan Valley Appoints KLA Founder as New Chairman The firm has appointed Ken Levy as the Chairman of the Board of Directors Jordan Valley Semiconductors (JVS), a market leader in X-Ray and VUV based metrology tools for the semiconductor industries has named Ken Levy as chairman of its board of directors. Levy replaces Kalman Kaufman, who remains a member of the JVS Board.

Avi Fischer, Deputy Chairman of IDB Group (the largest shareholder in the company, through Clal Industries and Elron) said, “Jordan Valley led by the leadership of founder and CEO Isaac Mazor, presented impressive and unique progress in 2010. We thought that at this time the company could benefit from the skills and expertise of one of the most experienced, talented and highly regarded managers in the industry - Ken Levy.” “With the addition of Ken and the continued tenure of Kalman Kaufman, who has played a great part in



the dramatic progress that the company made, the company enjoys one of the most impressive boards of directors for a private company in its industry,” he continued. “I am pleased to assume the role of Chairman of the board,” stated Ken Levy. “Jordan Valley’s products are enabling X-Ray systems to move onto the high volume production applications. Their systems will enable the semiconductors industry to control its most advanced processes. I expect the company to continue to innovate and expand its business opportunities”. “It has been an honor to serve as Chairman of the Board these past three years and to be a part of Jordan Valley’s board,” said Kalman Kaufman. “I look forward to continuing to work with Ken, a seasoned business executive and visionary technologist, who founded and led KLA-Tencor for over 30 years”. “We are extremely pleased that Ken has accepted the position of Chairman. His experience and knowledge in the semiconductors capital equipment business will be a valuable asset to Jordan valley” noted Isaac Mazor, Founder and CEO of Jordan valley Semiconductors. “I believe the next few years will prove to be a period of increased market penetration and high growth for Jordan Valley following it’s outstanding growth in 2010. As a chairman of the board, Ken will play a key role in driving the company’s strategy,” added Mazor. Kenneth Levy has been an entrepreneur and corporate executive for over 35 years. He founded KLA Instruments in 1976 and served as it’s CEO and then Chairman until 2006. Upon his retirement he was named Chairman Emeritus of the Company. During his tenure at the company, KLA-Tencor went from a development stage company to one with sales of over $2 Billion and a market cap in excess $10 Billion. Today it is one of the five largest companies in the Semiconductor Capital Equipment Industry. Levy has received numerous awards, including the “SEMMY” Semiconductor Equipment and Materials Institute award in the area of wafer fabrication, the SEMI Lifetime Achievement award, the Silicon

Valley Hall of Fame, and he was elected as a member of the National Academy of Engineering. Over the past 25 years, Levy has been active in helping to build Israeli hi-tech companies. In addition to investing in a number of Technology companies his spearheaded the establishment of KLA-Tencor Israel and served on a number of Israeli Boards including Saifun, Aprion, Scitex Digital, PowerDsine, Genoa, and DigiFlex. For his contributions to Israeli Industry, he was awarded the “State of Israel Jubilee Award” by Prime Minister Netanyahu. Ken Levy has a BSEE from City College of New York and MSEE from Syracuse University. JVS manufactures X-ray and VUV metrology solutions for advanced semiconductor fabs, develops and supplies superior metrology equipment for quality control of thin films based on rapid, non-contacting and non-destructive technologies. The company offers the Semiconductor Industry solutions for process monitoring SiGe stacks and III-V technologies. JVS sells fully automated fab tools based on advanced metrology methods such as XRR (X-Ray reflectance) , XRF (X-Ray florescence), HRXRD (High resolution X-Ray diffraction), VUV (Vacuum Ultra Violet light) and other technologies, ideal for product or blanket wafers. For the High brightness LED manufacturing market (HBLED), JVS offers fast and economic process quality control tools. JordanValley’s investors include Clal Industries and Investments, Intel Capital and Elron Electronics Industries. With headquarters in Migdal Haemek, Israel, the company has offices in Durham, United Kingdom and Austin, Texas, USA, as well as representatives worldwide.



AXT Expands Sales Presence in Asia With New Appointment The firm has appointed Liming Zhu as Vice President of Sales in Asia.

AXT, a leading manufacturer of compound semiconductor substrates, has appointed Liming Zhu, Ph.D. as VP of Sales for the Asia region.

Zhu previously served as AXT’s VP of quality and quality systems for the company’s manufacturing facility in Beijing, China. This appointment represents an expansion of AXT’s direct, local sales presence in Asia, marking the increasing strategic importance of this geographic region.

“Liming has done a tremendous job for AXT in our quality and quality systems division and his knowledge of our products and our customers makes him a perfect fit to head up our sales efforts in this increasingly important region,” said Morris Young, CEO. “There is an abundance of opportunity in Asia and having a direct, local presence underscores our commitment to this region and enhances our ability to respond quickly and effectively to customer needs. We believe this expansion will help drive continued market share growth in Asia and I look forward to working with Liming in his new role.”

Zhu was appointed vice president of quality and quality systems for AXT early this year after serving as director of quality and quality systems for AXT since 2007. He joined AXT in 2001 and has held various positions including senior process R&D engineer, senior project manager and product reliability manager.

Zhu earned his Ph.D. in chemical engineering from the East China Institute of Technology. He also holds a master’s degree and a bachelor’s degree in chemical engineering from East China Institute of Technology. He had an extensive research career prior to joining AXT and currently holds five patents.

AXT designs, develops, manufactures and distributes high-performance compound and single element semiconductor substrates comprising gallium arsenide (GaAs), indium phosphide (InP)

and germanium (Ge) through its manufacturing facilities in Beijing, China. In addition, AXT maintains its sales, administration and customer service functions at its headquarters in Fremont, California. The company’s substrate products are used primarily in lighting display applications, wireless communications, fiber optic communications and solar cell. Its vertical gradient freeze (VGF) technique for manufacturing semiconductor substrates provides significant benefits over other methods and enabled AXT to become a leading manufacturer of such substrates. AXT has manufacturing facilities in China and invests in five joint ventures producing raw materials.

Yokogawa Optical Spectrum Analyser Is `Best in Class` Yokogawa’s AQ6370C combines exceptional accuracy and resolution with ultra-high dynamic range, comprehensive interfacing and ease of use.

The new Yokogawa AQ6370C is an optical spectrum analyzer offering the world’s ‘best in class’ optical performance according to the firm. It is ideal for use in R&D and production testing of optical devices and transmission systems.

This product provides stray-light suppression capability when used in high dynamic mode and



does not usually require long measurement times as it has a high stray light suppression ratio.

The AQ6370C can measure high power sources such as optical amplifiers and pump lasers for Raman amplifiers, and very weak optical signals as well. Measurement sensitivity can be chosen from seven categories according to test applications and measurement speed requirements.

With an advanced monochromator, faster electrical circuits, and noise reduction techniques, the AQ6370C achieves fast measurement speed even when measuring a steep spectrum from DFB-LD or DWDM signals, or when measuring a low power signal from a broadband light source.

The 50,001 data sampling points expands measurement range in a single sweep while keeping a high wavelength resolution. This makes the measurement easier and more efficient than in conventional systems.

Covering a wavelength range of 600 to 1700nm and applicable to both single-mode and multimode fibres, the AQ6370C provides unprecedented optical performance, including high wavelength accuracy of ±0.01 nm, high wavelength resolution of 0.02 nm, ultra-high dynamic range of 78 dB (typical), wide level range of -90 dBm, and fast sweep speed of 0.2 sec/100 nm.

Enhanced functionality and operability are provided by a large, bright LCD screen, easy operation via panel keys and a mouse, four USB ports including memory, mouse and keyboard interfaces, and high-speed GPIB and Ethernet remote interfaces. The instrument also has a built-in wavelength reference source and a range of integral analysis functions.

The ultra-high dynamic range (typically 80 dB) results from an enhanced stray-light suppression ratio in the monochromator, and results in reduced measurement times. The higher-performance model can also achieve a higher dynamic range within 0.2 nm of the peak wavelength. With the sharper spectral characteristics of the monochromator, spectral signals in close proximity can be separated clearly and measured accurately.

The wide level range from +20 dBm to -90 dBm means that the AQ6370C can measure high power sources such as optical amplifiers and pump lasers for Raman amplifiers as well as very weak optical signals. Measurement sensitivity can be selected

from seven categories according to the application and measurement speed requirement.

In addition to improved level sensitivity of -85 dBm (from 1000 to 1300 nm), the AQ6370C incorporates a smoothing function to reduce noise on the measured spectrum and a high dynamic mode which obtains a better dynamic range by reducing the influence of stray light caused when the input is a strong optical signal.

The free space input allows multimode and single-mode fibre measurements to be carried out on the same instrument. In addition, the low insertion loss for multimode fibre available with the AQ6370C also helps to maintain the excellent measurement efficiency. The low insertion-loss variation at the input connector increases the measurement repeatability, and the lack of physical contact means that no damage is incurred in connecting the fibres. An APC level correction function is also included to correct the level offset resulting from the insertion loss of an angled PC (physical contact) connector.

With an advanced monochromator, faster electrical circuits, and noise reduction techniques, the AQ6370C achieves high measurement speed even when measuring a steep spectrum from DFB-LD or DWDM signals, or when measuring a low-power signal from a broadband light source. Efficiency is further enhanced by the high-speed Ethernet and GP-IB remote interfaces.

A combination of wide span sweep with high resolution results from the availability of 50,001 data sampling points, which makes measurements easier and more efficient. Ease of operation also benefits from the ability to carry out trace zooming and the combination of mouse and keyboard operation.

USB interfaces support large-capacity removable memory and hard disk drives in addition to the 512 Mbyte of internal memory: sufficient for over 20,000 traces. Data handling is further eased by the ‘all at once’ trace filing, which allows all seven traces to be saved simultaneously in one file.

Analysis functions include calculations between traces, maximum/minimum hold, and 13 spectral analysis functions for popular applications such as spectral width analysis, WDM analysis, filter analysis and LED analysis. A macro programming function allows multiple analyses to be combined



and executed automatically as well as forming the basis for building automated test systems.

The AQ6370C can compensate for ambient condition changes, vibration and shock through a combination of the built-in wavelength reference source, a wavelength calibration function and an optical alignment function.

The overall high performance of the AQ6370C allows it to be used for both R&D and manufacturing tests on optical devices and systems including active devices such as lasers, amplifiers and transceivers, passive devices such as filters and fibres, and optical transmission equipment for DWDM and CWDM transmission.

Two versions of the AQ6370C are available, differing only in wavelength accuracy and dynamic range: the standard AQ6370C-10 and the higher-performance AQ6370-20.

Yokogawa’s global network of 25 manufacturing facilities and 80 companies spans 54 countries. Since its founding in 1915, the US$3 billion company has been engaged in cutting-edge research and innovation, securing more than 7,200 patents and registrations, including the world’s first digital sensors for flow and pressure measurement. Industrial automation and control, test and measurement, information systems and industry support are the core businesses of Yokogawa.

Bronkhorst High-Tech calibration laboratory ISO-17025 certified Bronkhorst High-Tech B.V. has been producing thermal mass flow meters and regulators for nearly 30 years now. These instruments are calibrated with state-of-the-art calibration equipment, certified via the Dutch Metrology Institute VSL (formerly NMi) in accordance with national and international standards.

On Wednesday 8 September 2010, the management of Bronkhorst High-Tech received the ISO/IEC 17025:2005 certificate, the highest national standard for gas calibration, from Mr van der Poel, General Director of the Dutch Accreditation Council

(RvA). This certification entitles Bronkhorst to perform accredited gas calibrations for a unique range from 0.0007 to 6200 ln/min. This applies to both Bronkhorst High-Tech mass flow meters/controllers and those of other brands. In addition to mass flow calibrations, Bronkhorst also offers volume flow calibrations from 0.0007 to 6650 l/min. Accredited calibrations can be applied to new instruments that are ready for delivery as well as older equipment that has already been in operation. Bronkhorst also offers portable and stationary calibration systems with an optional RvA calibration certificate.

Tiger Optics Expands Worldwide Distribution Network The USA based gas-analyzer manufacturer has added eight distributors in Europe and the United States to facilitate sales and support of its laser-based trace gas analyzers.

To keep pace with soaring demand, Tiger Optics has announced new partnerships with eight distributors in Europe and the United States to facilitate sales and support of its laser-based trace gas analyzers.

The move significantly expands the manufacturer’s global reach and enhances its ability to serve customers.

“Our newest distributors deliver solutions for critical applications ranging from industrial process control to ambient molecular contamination monitoring,” said Lisa Bergson, Tiger Optics’ founder and chief executive. “By partnering with Bernt Messtechnik



GmbH, S.E.C. Scientific Equipment Co. Ltd., A&LCO Industries, APT, SPA, OmniProcess AB, Instrumentación Analítica and Flowmaster, we are well positioned to support our customer’s gas analysis and clean-room monitoring needs.”

Tiger Optics introduced the world’s first commercial “Continuous Wave Cavity Ring-Down Spectroscopy” (CW CRDS) analyzer in 2001. Today, more than 800 robust Tiger units are at work in such demanding environments as semiconductor fabrication plants, gas manufacturers, chemical companies, as well as metrology institutes. Returning customers account for more than 65 % of the company’s sales.

Tiger Optics, LLC makes powerful, laser-based gas analyzers that feature and foster clean technology. The company’s instruments help manufacturers achieve faster throughput, with less waste.

For more than 30 years, Bernt Messtechnik has provided gas analysis and measurement equipment to plants producing steel, aluminum, copper, automotives and semiconductors, as well as to research facilities, the chemical/petrochemical industry and power plants. Its offices are located in Dusseldorf, Munich, and Karlsruhe, Germany. S.E.C. Scientific Equipment supplies gas analysis equipment to industry and is located in Rishon Lezion, Israel.

Founded in Milan in 1987, AL&CO Industries is well known for supplying equipment and services for detection of airborne particulate contaminates in liquids and compressed gases. AL&CO is located in Cologno Monzese, Italy.

Established in 1995, APT provides gas analysis and detection equipment for industrial process control. APT is located in Cesano Maderno, Italy.

SPA offers analytical equipment, systems and design services to industries, such as power plants, sewage treatment plants, chemical/petrochemical, metallurgy, food and pharmaceutical. SPA is located in Wroclaw, Poland.

OmniProcessABprovides field instrumentation and analytical equipment to the Swedish process industry. The company is headquartered in Solna, Sweden. Since 1980, Instrumentación Analítica has supplied measurement and control instruments to many

industries, such as industrial gas, petrochemical, pharmaceutical, food, environmental, biodiesel, and power plants. Its offices are located in Barcelona and Madrid, Spain. For more than 25 years, Flowmaster has supplied gas analyzers, block valves, control valves, instrumentation, and safety products to industry. Flowmaster is located in Baton Rouge, Louisiana, USA.

New Asian headquarters GT Solar International , a provider of polysilicon production technology, and sapphire and silicon crystalline growth systems and materials for the solar, LED and other specialty markets, today announced that it has opened its new Asia operations headquarters in Hong Kong. The Hong Kong headquarters better serves the needs of its customers throughout the Asia Pacific region. “Over eighty-five percent of our business now comes from Asia, particularly from China where most of our customers are located,” said Tom Gutierrez, president and CEO of GT Solar. “Our Asia headquarters is the next logical step in developing the most appropriate business model to support our growing customer base in the region. By focusing the operations of our business in Hong Kong, we will be more responsive to our local customers and continue to provide the high quality products and high levels of support they have come to expect from GT Solar.” “Hong Kong is the ideal place to locate our Asia headquarters,” said Jeff Ford, managing director for GT Solar Hong Kong, Limited. “It offers a favorable business climate with a deep pool of talent that we have already taken advantage of to build a world-class team of experienced professionals to lead our business. Our local team includes sales, business development, service, supply chain, logistics, and quality assurance. Expanding these business functions directly in the region allows us to compete more effectively in the fast-growing solar market. GT Solar has been doing business in Asia since 2002. Since then the company has played an important role as an equipment provider, to helping the region’s early adopters establish their PV and polysilicon manufacturing operations. Today,



many of these companies have grown to become some of the region’s largest solar manufacturers in China, Korea, and Taiwan, and are using GT Solar products and technologies to improve productivity and lower their cost of manufacturing. In September of 2009, the company opened its facility in Shanghai, China to provide greater service and support to its growing customer base in the region. The Shanghai facility will continue to provide installation resources, demonstration capabilities for customers wishing to test new process recipes, product training and spare parts inventory. PV equipment product development, engineering and R&D will remain in the company’s corporate headquarters in Merrimack, New Hampshire, and product development, engineering and R&D for its polysilicon equipment will remain in Missoula, Montana. GT Solar also announced today that its next DSS crystalline growth furnace, the DSS650(TM), has begun beta production evaluation with customers. The new system provides an upgrade path for current customers using DSS 240(TM), DSS450(TM) and DSS450HP(TM) systems in their production environments. The DSS650 is capable of producing ingots larger than 600 kilograms and is compatible with the chamber configuration of current DSS systems. Commercial availability of the new system is expected for early calendar year 2011. “The DSS650 continues our commitment to customers to lower their manufacturing costs by leveraging their investment in our crystalline growth furnaces to take advantage of new technology,” continued Gutierrez. “We designed the new DSS650 system so current customers can easily upgrade to the new system, which underscores our commitment to protecting our customers’ investment in GT Solar DSS equipment.” With over 1,700 systems in the field, GT Solar’s DSS ingot growth furnaces are widely used in PV wafering operations. GT Solar’s innovation and expertise in mechanical design, vacuum and high-pressure chambers, control system design, and crystal growth modeling, provide customers with a technologically advanced directional solidification furnace that consistently produces high quality ingots with optimized mass ingot yield.

Hiden Analytical launch real-time multi-species gas analyserHiden Analytical introduce the new QGA compact benchtop mass spectrometer configured for continuous real-time multi-species analysis of both gases and vapours in the pressure range from 2 bar to 100mbar absolute

Applications include thermal analysis, fermentation processes, catalysis and general gas reaction studies. With mass range to 300amu and detection levels to 100ppb the system features the QGA operating program for quantitative analysis of up to 16 gases and vapours, together with an internal 10-peak spectral library and automated spectral overlap correction. Data is readily integrated in real time with external monitors including temperature, pressure and weight and with external gas monitors for applications such as CO monitoring in the presence of N2. The innovative APSI mode reduces molecular fragmentation by soft ionisation to refine analysis of complex organic molecules and enables selective ionisation of many gas species by selection of specific ionisation energies – helium and deuterium at mass 4 for example. The flexible 2M long sample interface operates to 200C and is configured to balance sample consumption to the process requirements with sample consumption rates controllable from 1 to 16 mL/min. Options include high-pressure adaptors for sample pressures to 30 bar, gas stream selectors for selection from up to 80 gas streams and hot-zone extensions for direct sampling from processes to 1000C.

Novel devices ♦ product news


LayTec delivers its 1000th in-situ monitoring system Since its foundation in 1999, LayTec has been a supplier to industrial companies and research institutions world-wide.

At the beginning, the company focused on metrology solutions for III-V based compound semiconductors in telecommunication applications. In 2001–2005, after flexible adaptation of the product portfolio to the needs of the III-N market, LayTec‘s EpiTT and EpiCurve TT sensors became a must in GaN based LED production. Hence, in 2008 the number of shipped metrology tools doubled as compared to 2007.

When the current LED boom hit the roof in mid 2009, LayTec managed to upscale its production capacities to the current market demand just within a few months. Since then, several hundreds of metrology systems have been shipped world-wide. Compared to 2009, the number of delivered products increased by more than 300% in 2010. Thanks to the leading metrology performance in industry, LayTec‘s share on the MOCVD market for new in-situ equipment is well above 70%

LayTec‘s production and logistics manager Dr. Elmar Droege commented: “The immense increase of production capacities was possible due to the extraordinary commitment and high qualification of our employees as well as immediate additional investments in the production facilities. Thanks to the high efficiency of our quality control, we managed to reconcile the fast response to the growing demand with the high quality standards expected from our industrial customers.“

In July 2010 LayTec successfully renewed its Quality Management Certificate according to the DIN EN ISO 9001:2008 norm.

Product News Novel devices

Arradiance Ships First Benchtop ALD System to Oregon State University The firm says its GEMStar Atomic Layer Deposition (ALD) benchtop research system has the flexibility to deposit atomically thin layers of material on “virtually any substrate”. Potential applications include solar, space science, environmental and semiconductor. Arradiance has shipped its first of multiple orders of the GEMStar Atomic Layer Deposition (ALD) system to the School of Electrical Engineering and Computer Science at Oregon State University. With its capability to process up to 6” diameter wafers using up to eight precursors, GEMStar has the flexibility to deposit atomically thin layers of material on virtually any substrate and was designed with the most challenging high aspect ratio and through-pore deposition applications in


financial news ♦ LEDs

mind. “From our work with sensitive, high aspect ratio microchannel structures we became acutely aware of the need for a system which could repeatably and uniformly deposit complex nanolaminate films efficiently,” explains David Beaulieu, COO of Arradiance. “We also realized that in order to meet the needs of the Research community, the tool needed to be small, but powerful and be flexible enough to handle the wide range of applications, substrates and materials commonly found in lab environments.” John F. Conley, OSU Professor states, “The GEMStar has everything our lab environment should need in an ALD tool. It is small, flexible and can handle up to six inch wafers. We also like the 1” height of the chamber that accommodates small, three dimensional objects and the port we can use for in-situ metrology. The design appears to be rugged and easy to service.” “Our unique experience in materials science, charged particle physics and systems design have been combined to make a truly robust Research system for engineers who are serious about their work,” says Ken Stenton, Arradiance CEO. “Because of the importance of materials research in emerging growth industries such as biomedical, solar, space science, environmental and semiconductor, we saw the need for a research tool with production performance and reliability. We’re confident the GEMStar will meet and exceed that need.” Arradiance’s functional film technologies are geared at enhancing the performance of imaging and detection systems, providing resolution, gain and lifetime improvements that were previously unattainable.

FINANCIAL NEWSLEDs

Luminus Awarded 50th U.S. Patent For ‘Big-Chip’ LEDs The ultra-bright PhlatLight big-chip LEDs enable new general illumination applications in a number of lighting markets such as entertainment, retail, residential and displays. Luminus Devices, developer and manufacturer of ‘big-chip’ PhlatLight LEDs, has recently been awarded its 50th patent by the United States Patent and Trademark Office (USPTO). Having pioneered big-chip LED technology, Luminus has aggressively filed intellectual property (IP) for protection of big chip LED devices, packages and systems. In addition, the company has also been granted 13 non-U.S. issued patents in China, Korea and Taiwan that extend big-chip LED protection into those countries. “We are pleased that we continue to be granted patents covering big-chip LED technology and the rapid allowance of our patents is a testament to the novelty of our approach in the solid-state lighting industry,” said Alexei Erchak, founder and CTO, Luminus. “We have more than 100 additional patents pending in the US and in other countries that further extend our coverage.” In addition to filing for new patents, Luminus has a track record of granting licenses to other LED companies, including Forepi, Epistar and Nichia. “It is our belief that the innovative technologies developed at Luminus can help advance the entire solid-state industry at a more rapid pace,” commented Erchak. “We therefore welcome licensing opportunities that complement our core manufacturing business while simultaneously helping other LED companies benefit from our technology.

LEDs ♦ financial news


As the industry begins to become more and more interested in the value of big-chip LEDs, we are seeing companies respect our IP position and many licensing opportunities continue to develop.” Designed to provide an ultra-bright, reliable light source, PhlatLight big-chip LEDs are used in display applications by some of the world’s largest electronics and lighting companies such as Acer, Guth, LG, Philips Lighting and Samsung. They enable new general illumination applications in lighting markets such as architectural, entertainment, retail, residential, roadways, industrial high-bay lighting, digital displays and signage and UV for industrial processing. Luminus Devices develops and manufactures high performance solid-state light sources PhlatLight LEDs for a variety of lighting applications. Its headquarters and primary manufacturing facilities are located in Billerica, Massachusetts, U.S.A.

Rubicon Reports 30% Increase in Revenue Operating margin was 40 % and diluted earnings per share nearly doubled sequentially to $0.35. The firm also announced that it will open manufacturing plants in Illinois & Malaysia. Rubicon Technology, a leading provider of sapphire substrates and products to the LED, RFIC, Semiconductor, and Optical industries, has reported financial results for its third quarter ended September 30, 2010 and announced the opening of two new manufacturing facilities.

Commenting on the results, Raja Parvez, President and CEO said, “We had another outstanding

quarter with strong growth in revenue and earnings. Overall demand from the LED market remained strong in the quarter as our customers continued to add capacity in response to the projected rapid growth in the LED industry.” The Company’s revenue increased 30 % sequentially to $20.5 million in the current quarter largely due to increased pricing for sapphire substrates driven by strong demand from the LED market. The Company also reported continued strong interest for its polished six inch wafers. Parvez continued, “With the increased polishing capacity we are bringing on-line, we expect the six inch polished wafer product to become an increasingly large percentage of our total revenues.” Commenting on the outlook for the fourth quarter, William Weissman, Rubicon’s CFO said “While we have seen some softening in demand in certain geographies associated with higher TV panel inventories, overall demand remains strong and we expect prices for our sapphire products to increase in the fourth quarter by at least 15 % on average sequentially. We also anticipate beginning to add capacity in both crystal growth and polishing in the quarter. As a result we expect revenue to increase approximately 27 % sequentially to between $25 and $27 million. Gross margin should be in the high 50 % range with operating margin in the mid 40 % range. Based on a projected diluted share count of 24 million shares, we expect diluted earnings per share to be between $0.47 and $0.49.” The Company also reported that it recently opened both its new crystal growth facility in Batavia, Illinois and its new polishing facility in Penang, Malaysia. The new crystal growth facility will be producing larger crystals allowing the Company even more flexibility in addressing the growing demand for larger diameter sapphire substrates. The new polishing facility will be responsible for the more labor intensive crystal fabrication processes and will also allow the Company to significantly expand its capacity for large diameter wafer polishing. Parvez commented, “Combined, I believe these two new facilities give us a significant advantage in the marketplace. This combination of high volume, high quality, large diameter crystal growth and polishing capability makes us unique in the marketplace today and positions us very well to maintain our leadership position for years to come.”


financial news ♦ LEDs

Conference Call DetailsRubicon hosted a conference call to review the highlights of the third quarter 2010 results and the fourth quarter 2010 outlook. The webcast will be archived on the Company’s website. Rubicon Technology is an advanced electronic materials provider that is engaged in developing, manufacturing and selling monocrystalline sapphire and other crystalline products for light-emitting diodes (LEDs), radio frequency integrated circuits (RFICs), blue laser diodes, optoelectronics and other optical applications. The Company applies its proprietary crystal growth technology to produce very high-quality sapphire in a form that allows for volume production of various sizes and orientations of substrates and windows. Rubicon is a vertically-integrated manufacturer with capabilities in crystal growth, high precision core drilling, wafer slicing, surface lapping, large-diameter polishing and wafer cleaning processes, which the Company employs to convert the bulk crystal into products with the quality and precision specified by its customers. The Company is actively developing larger diameter products to support next-generation LED, RFIC and optical window applications.

Robert Tillman Elected to Cree Board of Directors The industry veteran served as chairman of Lowe’s Companies from 1998 to 2005 and as a member of its Board of Directors from 1994 to 2005. Cree has appointed Robert Tillman, to its company’s Board of Directors, and to the Board’s Compensation Committee, effective October 26, 2010. “We welcome Bob to our Board of Directors,” said Chuck Swoboda, Cree chairman and CEO. “He brings substantial leadership experience as a CEO in a major publicly traded company in the retail distribution industry. His knowledge, operational expertise and insight into consumer products should be very valuable to our board as we work to accelerate the LED Lighting Revolution.” Tillman, 67, served as chairman of Lowe’s

Companies, from 1998 to 2005, as its president and CEO from 1996 to 2005, and as a member of its Board of Directors from 1994 to 2005. After his retirement from Lowe’s in 2005, he served as a member of the Board of Directors of Bank of America Corporation from 2005 to 2009 and also as a member of its Executive and Asset Quality Committees. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for wireless and power applications. Its product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices.

Cree Share Price Down 10% Although Record Revenue of $268 Million Reported The quarterly revenue for Q1 FY2011 increased 59% year-over-year and quarterly net income increased 176% year-over-year to $58 Million. The share price went from $53 at close of business on Oct 19 to $48 at open of business the following day. Cree, a market leader in LED lighting, has announced record revenue of $268.4 million for its first quarter of fiscal 2011, ended September 26, 2010. This represents a 59% increase compared to revenue of $169.1 million reported for the first fiscal quarter last year and a 1.5% increase compared to the fourth quarter of fiscal 2010. GAAP net income for the first quarter increased 176% year-over-year to $58.0 million, or $0.53 per diluted share, compared to GAAP net income of $21.0 million, or $0.23 per diluted share, for the first quarter of fiscal 2010.

LEDs ♦ financial news


“Q1 was another record quarter for Cree as revenue grew in lighting, LED components and power products,” stated Chuck Swoboda, Cree chairman and CEO. “Although total revenue was on the low end of our target range of $270-280 million due to a decline in LED chips, LED lighting adoption continues to gain momentum and the growth drivers for the company remain on track.” Cash and investments increased $32.4 million from Q4 FY 2010 to $1,098.8 million. Cash flow from operations was $88.5 million. Free cash flow (cash flow from operations less capital expenditures) was $26.9 million as the company spent $61.6 million on capital expenditures. For its second quarter of fiscal 2011 ending December 26, 2010, Cree targets revenue in a range of $270 million to $280 million with GAAP net income of $51 million to $55 million, or $0.46 to $0.50 per diluted share. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor solutions for backlighting, wireless and power applications. Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, electronic signs and signals, variable-speed motors and wireless systems.

5N Plus Inc. Reports First Quarter Results for Fiscal Year 2011 5N Plus Inc. a producer and provider of high-purity metals and compounds for electronic applications, have reported financial results for its first quarter ended August 31, 2010. Sales for the first quarter ended August 31, 2010, increased by 16.9% to $18,770,228 compared to $16,053,220 for the first quarter of the previous fiscal year. Net earnings for the first quarter were $4,033,224 ($0.09 per share), representing a 33.8% increase over net earnings of $3,014,608 ($0.07 per share) for the same period last year. EBITDA(1) for the first quarter was $6,260,433, representing an increase of 24% compared to EBITDA of $5,049,538 for the first quarter of the previous fiscal year. The backlog of orders expected to translate into sales over the following twelve months stood at $57,423,649 as at August 31, 2010 compared to $56,277,503 a year ago. Changes in currency exchange rates had an adverse impact of approximately $4 million on the backlog. The Company’s financial position remains solid, with cash and cash equivalents of $64,000,238 as at August 31, 2010 compared to $67,992,321 as at May 31, 2010. Shareholders’ equity also increased during the first quarter to $130,197,617 up from 125,678,537 as at May 31, 2010. The Company is now also part of the S&P/TSX Small Cap Index as of September 17, 2010 and the S&P/TSX Clean Technology Index as of September 20, 2010. Jacques L’Ecuyer, President and Chief Executive Officer, said “The results of our first fiscal quarter ended August 31, 2010 are in line with those of the previous quarters in terms of sales and profitability. Demand for our solar grade products remained strong throughout the quarter, although growth in overall sales revenues was driven primarily by our non-solar grade products, including those of our


financial news ♦ Telecoms

Firebird subsidiary. A further increase in the coming quarters for such non-solar products is expected, as our new Firebird facility is gradually brought up to speed.” Mr. L’Ecuyer continued, “Further strengthening in the demand for our solar products is also expected following recent capacity expansion announcements made by our main customer, as well as by the supply agreements we recently entered into with other CdTe solar module manufacturers, including Abound Solar. We are also extending the range of services offered to our solar customers to include full module recycling services, which will be soon be carried out in our new facility in Madison, Wisconsin, in an effort to address all key customer requirements.” Mr. L’Ecuyer concluded, “Consistent with our growth strategy, we also elected during the quarter to provide financing to Sylarus, one of the very few germanium substrate suppliers for high-efficiency solar cells in both space and terrestrial applications. This is an area of the solar market that we were not addressing through our existing product offering. As a result we expect to further strengthen our germanium related activities and leverage Firebird’s line of products.” The unaudited consolidated financial statements of 5N Plus, as well as the Management’s Report for the first quarter ended August 31, 2010 are available on the 5N Plus website, at www.5nplus.com and at www.sedar.com.

Cree Reports Record Quarterly Revenue for the First Quarter of Fiscal Year 2010 Cree, Inc., a market leader in LED lighting, today announced record revenue of $169.1 million for its first quarter of fiscal 2010, ended September 27, 2009. This represents a 20% increase compared to revenue of $140.4 million reported for the first fiscal quarter last year and a 14% increase compared to the fourth quarter of fiscal 2009.

FINANCIAL NEWS TelecomsFinisar Reports Record Revenues & Return to Profitability The firm has announced second fiscal year quarterly revenues of $240.9 million and net income from continuing operations were a record at $33.8 million. Finisar Corporation, a global technology leader for subsystems and components for fiber optics communications, has announced financial results for its second quarter ended October 31, 2010. “In our just completed second quarter, we reached our previously announced target for non-GAAP operating margin of 17.0%, upwardly revised just last quarter, substantially earlier than we had predicted. Achieving this level of operating margin was driven by our strong revenue growth combined with minimal increases in operating expenses,” said Jerry Rawls, Finisar’s executive Chairman of the Board. “We achieved new company records for quarterly revenues, operating income and net income.” “Furthermore, the market environment continued to be very strong for Finisar, driven by increased demand for a broad range of LAN/SAN and metro/telecom products,” said Eitan Gertel, Finisar’s Chief Executive Officer. “The company continued to gain market share, including in the WSS/ROADM line card segment where revenues grew 27.3% over the previous quarter. We expect revenues for WSS/ROADM line cards to grow another 20% to 30% sequentially in our fiscal third quarter.” Highlights for the second quarter of fiscal 2011 under GAAP: Revenues increased to $240.9 million, up $33.1 million, or 15.9%, from $207.9 million in the

Telecoms ♦ financial news


preceding quarter and up $95.2 million, or 65.3%, from $145.7 million in the second quarter of the prior year. Compared to the preceding quarter, the sale of 10 Gbps or faster products increased $13.3 million, or 14.1%, the sale of less than 10 Gbps products increased $12.1 million, or 15.4%, the sale of ROADM related products, including wavelength selective switches (WSS) increased $8.3 million, or 27.3%, and the sale of products for analog and cable television (CATV) applications decreased $0.7 million, or (15.6)%. Compared to the second quarter of 2009, the sale of 10 Gbps or faster products increased $52.0 million, or 94.0%, the sale of less than 10 Gbps products increased $21.3 million, or 30.5%, the sale of ROADM related products increased $23.3 million, or 151.0%, and the sale of products for CATV applications decreased $1.4 million, or (28.6)%. Gross margin increased to 34.2% from 34.1% in the preceding quarter and 27.3% in the second quarter of the prior year. Operating income increased to $36.1 million, or 15.0% of revenues, compared to $23.7 million, or 11.4% of revenues, in the preceding quarter and an operating loss of $(2.0) million, or (1.3)% of revenues, in the second quarter of the prior year. Net income from continuing operations was $33.8 million, or $0.39 per diluted share, compared to $19.4 million, or $0.24 per diluted share, in the preceding quarter and a loss of $(31.4) million, or $(0.49) per share, in the second quarter of the prior year. Cash generated during the second quarter, after working capital adjustments and capital expenditures, excluding the items described in the next paragraph, totaled $18.0 million. Accounts receivable and inventory increased $20.8 million and $12.4 million, respectively. The increase in accounts receivable was driven by increased revenue levels as days sales outstanding, or DSOs, were 66 days compared to 67 days in the prior quarter. The increase in inventory was due in part to planned inventory build-up in anticipation of further revenue growth in the third quarter. Capital expenditures were $13.4 million compared to $12.1 million in the preceding quarter and $7.6 million in

the second quarter of the prior year. In addition during the quarter, the Company received $11.3 million in cash, net of related legal fees, under a settlement and cross license agreement with Source Photonics, Inc. This settlement resolved a lawsuit brought by Finisar claiming infringement of Finisar patents. Finisar also paid $29.6 million in cash to retire convertible subordinated notes which matured on October 15, 2010 and made scheduled principal payments of an additional $1.0 million on its Malaysian debt. Finally, the Company used $5.9 million in cash to make a strategic minority investment in a small opto-electronics company. Cash and cash equivalents totaled $184.9 million at the end of the second quarter compared to $192.2 million at the end of the preceding quarter. Under Finisar’s $70.0 million secured credit facility with Wells Fargo Foothill, LLC, no borrowings were outstanding and $66.6 million was available to borrow at the end of the second quarter.

JDSU Stockholders Approve All Proposals at 2010 Annual Meeting The firm plan to increase the maximum number of shares of common stock that may be issued under the 2003 Plan by 12,200,000. JDSU has announced the results of its Annual Meeting of Stockholders held on November 30, 2010. Stockholders approved all three proposals presented for their consideration. Firstly, Martin A. Kaplan and Kevin J. Kennedy were re-elected to serve on JDSU’s Board of Directors for three year terms ending in 2013. Secondly, stockholders approved an amendment to the JDSU’s Amended and Restated 2003 Equity Incentive Plan to increase the maximum number of shares of common stock that may be issued under the 2003 Plan by 12,200,000.



Finally, stockholders ratified the appointment of PricewaterhouseCoopers LLP as JDSU’s independent registered public accounting firm for the fiscal year ending June 30, 2011. JDSU enables broadband and optical innovation in the communications, commercial and consumer markets. JDSU is a leading provider of communications test and measurement solutions and optical products for telecommunications service providers, cable operators, network equipment manufacturers, enterprise customers, and mobile operators. JDSU is also a leading provider of innovative optical solutions for medical/environmental instrumentation, semiconductor processing, display, brand authentication, aerospace and defense, and decorative applications.

Finisar Preliminary Financial Results Exceed Prior Guidance Expected revenues are up approximately 15.7% from the prior quarter and up 65.0% from the prior year Finisar Corporation, a global technology leader for subsystems and components for fiber optics communications, has announced that, on the basis of preliminary financial results, the Company expects to report revenues in the range of $240 to $241 million for its second fiscal quarter ended October 31, 2010. Finisar’s previously communicated revenue guidance for the quarter was $215 to $230 million. The revenue results are preliminary and subject to adjustment; however, in the absence of material adjustment, second quarter revenues will set a new record for the Company and represent the sixth consecutive quarter of double-digit, sequential revenue growth. In addition, as a result of these higher than expected revenues and the product mix experienced during the second quarter, the Company expects non-GAAP gross margin to be approximately 35.5% and non-GAAP operating

margin to be approximately 16.5% to 17.0%, exceeding the previously communicated operating margin guidance of 14% to 15%. Non-GAAP earnings per share are expected to be in the range of $0.41 to $0.43 for the quarter. While a complete assessment of cost of revenues and operating expenses is not yet available, based on past experience, results under GAAP are expected to include additional non-cash and infrequently occurring charges. Revenue growth in the second quarter as compared to the prior quarter was driven by increased demand for a broad range of LAN/SAN and metro/telecom products. The Company indicated that it currently expects revenues for its third fiscal quarter ending January 30, 2011 to be in the range of $247 to $262 million. Finisar Corporation is a global technology leader for fiber optic subsystems and components that enable high-speed voice, video and data communications for telecommunications, networking, storage, wireless, and cable TV applications. For more than 20 years, Finisar has provided critical optics technologies to system manufacturers to meet the increasing demands for network bandwidth and storage. Finisar is headquartered in Sunnyvale, California, USA with R&D, manufacturing sites, and sales offices worldwide. For additional information, visit www.finisar.com.

Skyworks Revenue Rockets to Over $1 billion For Fiscal Year 2010, the company’s revenue increased by 34% over FY 2009 and revenue guidance for the next quarter has been increased to $330 to $335 million. Skyworks Solutions, an innovator of high reliability analog and mixed signal semiconductors enabling a broad range of end markets, has reported fourth fiscal quarter and year end 2010 results.

Telecoms ♦ financial news


Revenue for the quarter was $313.3 million, up 14 % sequentially and 37 % year-over-year, and greater than the company’s updated guidance of $310 million provided on September 21 at its Analyst Day. For fiscal year 2010, revenue was $1.072 billion versus $802.6 million in fiscal 2009, a 34 % increase. On a GAAP basis, operating income for the fourth fiscal quarter of 2010 was $65.4 million and diluted earnings per share was $0.25. Operating income for fiscal 2010 was $199.7 million and diluted earnings per share was $0.75. “Skyworks is capitalizing on consumers’ insatiable demand for always on connectivity, broadband mobility and access, as well as home automation applications,” said David J. Aldrich, president and CEO of Skyworks. “We believe our strategy of diversifying across new vertical markets and customers while continuously improving operational execution will translate into sustainable above market growth, greater operating leverage and increasing shareholder value.” “Given our strong order visibility and increasing customer demand, we are forecasting revenue in the $330 to $335 million range for the current quarter, representing a 35 to 37 % year-over-year increase,” said Donald W. Palette, VP and CFO of Skyworks. “Operationally, we expect to deliver continued gross margin expansion and operating leverage yielding a 27-28 % non-GAAP operating margin. As a result, we intend to increase our non-GAAP diluted earnings per share to $0.44 in the December quarter.” Skyworks Solutions is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management, industrial, medical, military and mobile handset applications.

The Company’s portfolio includes amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrids, infrastructure RF subsystems, mixers/demodulators, phase shifters, PLLs/synthesizers/VCOs, power dividers/combiners, receivers, switches and technical ceramics. Headquartered in Woburn, Mass., Skyworks is worldwide with engineering, manufacturing, sales and service facilities throughout Asia, Europe and North America.

Kopin Reports Financial Results for the Third Quarter of 2010 Kopin Corporation today reported financial results for the three and nine months ended September 25, 2010. “Driven by the continued strong demand for smart phones and other advanced mobile devices, our III-V revenue has increased 50% to $47.1 million through the first nine months of 2010 from $31.5 million for the same period last year as a result of a combination of an expanding market and, we believe, increasing our market share at several of our power amplifier circuit partners during the year,” said Dr. John C.C. Fan, the Company’s president and chief executive officer. “III-V continued its momentum in the third quarter, increasing 16% year-over-year. These results reflect the strength of key end markets and reinforce the value proposition of our III-V transistor technology.”

“We have continued to broaden our III-V product portfolio with the addition of new advanced manufacturing systems and structures that further enhance device performance and improve power efficiency,” Dr. Fan said. “Furthermore, during the third quarter, we received a two-year, $750,000 contract through the Missile Defense Agency to develop Aluminum Indium Nitride (AlInN)-based high electron mobility transistors. This award enables us to leverage our proven success in III-V materials and nanoengineering, advancing toward our long-term goal of commercializing AlInN-based electronic materials.” “Despite a softness in defense spending, military



display revenues were solid in the third quarter, improving slightly from the second quarter,” Dr. Fan said. “On the commercial display front, we saw double-digit percentage growth in revenue, which climbed approximately 26% for the third quarter and through the first nine months of 2010.”

“Within the industrial end market, we continue to make excellent progress on our proprietary Golden-i concept, the world’s first hands-free mobile computing experience,” Dr. Fan said. “The new concept is creating a tremendous amount of excitement throughout the industry, and it has been honored by various technical organizations. Our business model for Golden-i focuses on building a strong industrial partnership to bring this game-changing product to market.”

In October of this year, Golden-i was displayed at a number of conferences, including Technology Services World in Las Vegas, the Police and Public Safety Conference in Orlando and the Microsoft Professional Developer Conference in Redmond, Washington. In the coming weeks Kopin plans to roll out a number of new Software Developer Kits.

Operating Results

The Company’s overall gross margin was 32.3% in the third quarter of 2010, compared with 32.6% in the same period of 2009. Year-to-date through September, the gross margin was 28.1%, compared with 29.3% for the same period in 2009. The lower year-to-date gross margin reflects delays in receipts for government programs in the first quarter, which resulted in manufacturing inefficiencies.

Research and development (R&D) expense was $4.8 million for the third quarter of 2010, compared with $3.5 million for the same period in 2009 and $4.9 million for the second quarter of 2010.

“As we discussed at the beginning of the year, we have been increasing our R&D investments for new III-V products targeting smart phones and tablet computers, and for advancing Golden-i to market,” Dr. Fan said. “Golden-i is a hardware and software platform that we believe has an addressable market in the billions and provides us with an opportunity to establish a substantially profitable business model.”

Net income for the three months ended September 25, 2010 was $1.4 million, or $0.02 per diluted

share, compared with $8.5 million, or $0.13 per diluted share, for the three months ended September 26, 2009. For the first nine months of 2010, net income was $4.3 million, or $0.06 per diluted share, compared with $14.1 million, or $0.21 per share, for the 2009 period.

The year-over-year decrease in the Company’s net income is related to a number of items in the 2009 period related to gains on the sale of patents and the Company’s investment in its Taiwan subsidiary, KTC. Excluding these items from the 2009 results of operations, net income for the third quarter of 2010 was $1.4 million, or $0.02 per diluted share, compared with $3.8 million, or $0.06 (1) per diluted share for the third quarter of 2009, while net income for the first nine months of 2010 was $4.3 million, or $0.06 per diluted share compared with $5.3 million, or $0.08 per diluted share, for the first nine months of 2009. The decrease in net income for the nine-month period of 2010 is primarily attributable to increased R&D expense.

Business Outlook

“III-V revenue growth continues to be strong and we do not expect the normal seasonal decline in the fourth quarter,” Dr. Fan said. “Although we expect military display revenues to remain solid in the fourth quarter, on a full-year basis these results have been affected by a weak first quarter related to delays in the procurement cycle. Accordingly, we expect to achieve the low end of our annual revenue guidance of $120 million to $130 million for 2010. Although we have invested $9.7 million in capital equipment and repurchased $5.4 million of our stock during 2010, our balance sheet has remained very strong. We had $110.5 million in cash and marketable securities at September 25, with no long-term debt.”

RF electronics ♦ financial news


Oclaro On the Up with Revenues of $121.3 million for Q1 FY2011 The firm’s revenues have increased to $121M and it has achieved an adjusted EBITDA of $10.9 million. Oclaro, a leading provider of high-performance core optical network components, modules and subsystems, has announced the financial results for its first quarter of fiscal year 2011, which ended October 2, 2010. “We are proud of our 43% year on year growth for the quarter. However, we experienced a slowdown in the rate of revenue growth in late September. Accordingly, our guidance for the December quarter is cautious,” said Alain Couder, President and CEO, Oclaro. “We continue to have confidence in our position in the market and believe the growth prospects for Oclaro and our customers in 2011 continue to be strong.” Revenues were $121.3 million for the first quarter of fiscal 2011, compared to $112.7 million in the fourth quarter of fiscal 2010. Telecom revenues were up over 9% compared to the prior quarter. GAAP gross margin was 29% for the first quarter of fiscal 2011, compared to 30% in the fourth quarter of fiscal 2010. GAAP operating income was $5.0 million for the first quarter of fiscal 2011, compared to $8.6 million in the fourth quarter of fiscal 2010. Adjusted EBITDA was $10.9 million for the first quarter of fiscal 2011, compared to $12.3 million in the fourth quarter of fiscal 2010. GAAP net income for the first quarter of fiscal 2011 was $0.4 million, compared to $10.6 million in the fourth quarter of fiscal 2010. Cash, cash equivalents, restricted cash and short-term investments were $94.0 million as of October 2, 2010. Oclaro paid $12.0 million in cash in the first quarter of fiscal 2011 to acquire Mintera Corporation. Oclaro expects for the second quarter of fiscal 2011, which ends 1 January 2011, that revenues will be in the range of $116 million to $124 million

and that adjusted EBITDA will be between $6 million and $11 million. Oclaro provides optical communications and laser components, modules and subsystems for a broad range of diverse markets, including telecommunications, industrial, scientific, consumer electronics, and medical. Oclaro is a global leader, dedicated to photonics innovation with cutting-edge chip fabrication facilities in the U.K., Switzerland and Italy, and in-house and contract manufacturing sites in the U.S., Thailand and China.

FINANCIAL NEWS RF electronicsAdvanced Photonix Reports 2nd Q 2011 Results Advanced Photonix a vertically integrated optoelectronic semiconductor manufacturer of optoelectronic solutions, high-speed optical receivers and terahertz instrumentation, has announced that its second quarter 2011 revenue increased by 29% and EBITDA improved by $675,000 compared to the prior year’s second quarter results.

“The second quarter continued to fuel our strong return to growth. Year-to-date results are ahead of the raised guidance we gave in August of 20% year over year growth. Based on the performance of the first half and the outlook for the second half we are raising our annual guidance to the low end of a 25% increase in sales for the year,” said Chairman and Chief Executive Officer, Richard (Rick) Kurtz. “We expect a strong second half of the year based on: the increase in demand for our HSOR products; a rebounding of our Optosolutions product platform; and the increased interest in our terahertz product platform, as demonstrated by the recently announced contracts to assist the Department of Homeland Security with the detection of concealed


financial news ♦ RF electronics

threats through the utilization of the technology in our T-Ray 4000.”The Company also filed today a universal shelf registration statement on Form S-3 with the SEC. When declared effective by the SEC, the shelf registration statement will allow the Company to sell up to $7 million of various securities. The Company has no commitment to sell any of its securities under this registration statement, and the terms of any future sale or issuance of securities under this registration statement will be set forth in a prospectus supplement that will be filed with the SEC in connection with any such sales or issuance.

Financial Highlights for the Second Quarter compared to the Prior Year

•The Company’s revenues increased 29% (or $1.6 million) over revenues for the quarter to approximately $7.0 million compared to $5.4 million for the second quarter ended September 25, 2009. Year to date revenues are up $1.9 million (or 17%) to $13.3 million over the first six months of fiscal year 2010.

•Gross Profit for Q2 2011 increased $838,000 (or 41%) to $2.9 million compared to $2.1 million for Q2 2010 on a 29% increase in revenue volume. Gross profit margins increased slightly to 42% of sales for Q2 2011 compared to 38% of sales for the comparable prior year period. Year to date gross profit was $5.8 million (44% of revenue) compared to $5.1 million (45% of revenue) for the first six months of fiscal year 2010.

•Operating expenses were $3.1 million for the quarter, the same as the comparable prior year period. Year to date operating expenses for both fiscal year 2011 and 2010 were the same at $6.3 million.

•Quarterly net loss was $398,000 or $0.02 per diluted share, as compared to a net loss of $1.2 million, or $0.05 per diluted share, for the prior year quarter ended September 25, 2009. For the six months ended October 1, 2010, the net loss was $671,000 or $0.03 per diluted share, compared to a net loss of $1.5 million or $0.06 per diluted share, for the comparable prior year six-month period.

•The Non-GAAP net profit for the second quarter of fiscal 2011 was $209,000 or $0.01 per diluted share, compared to Non-GAAP net loss of $452,000

or $0.02 per diluted share, for the comparable prior year period. Year to date Non-GAAP net profit was $307,000 or $0.01 per diluted share, compared to Non-GAAP net loss of $137,000 ($0.01 per diluted share) for the prior year six-month period ended September 25, 2009.

•EBITDA (which is defined as GAAP earnings before interest, taxes, depreciation, and amortization) was a positive $455,000 for the second quarter of fiscal year 2011, compared to negative EBITDA of $220,000 for the comparable prior year period. For the six months ended October 1, 2010, EBITDA was $842,000 compared to prior year to date EBITDA of $334,000.

Financial Highlights for the Second Quarter compared to the First Quarter 2011

•Net Sales for the quarter were approximately $7.0 million, an increase of $746,000 or 11% over the first quarter ended July 2, 2010. Revenue was down in only one of our five markets.

•Gross profit margin for Q2 2011 was 42% of sales compared to 47% for the first quarter ended July 2, 2010. •Operating expenses were $3.1 million for the quarter, compared to $3.2 million for the 1st quarter ended July 2, 2010.

•Quarterly net loss was $398,000 or $0.02 per diluted share, compared to a net loss of $273,000, or $0.01 per diluted share, for the first quarter ended July 2, 2010.

•The Non-GAAP net profit for the quarter was $209,000 or $0.01 per diluted share, compared to Non-GAAP net profit of $97,000 or $0.00 per diluted share, for the first quarter ended July 2, 2010.•EBITDA (which is defined as GAAP earnings before interest, taxes, depreciation, and amortization), was a positive $455,000 for the second quarter of fiscal 2011, as compared to a positive EBITDA of $387,000 for the first quarter ended July 2, 2010.



Anadigics Up the Game with 58.6% Increase in Sales For the nine months ended October 2, 2010, net sales for the firm totaled $156.5 million.

Anadigics, a leading provider of semiconductor solutions in the broadband wireless and wireline communications markets, reported third quarter 2010 net sales of $61.3 million.

This represents a sequential increase of 18.6% and an increase of 67% above the third quarter of 2009. For the nine months ended October 2, 2010, net sales were $156.5 million, up approximately 58.6% over the prior year.

As of October 2, 2010, cash, cash equivalents and short and long-term marketable securities totaled $96 million, up sequentially by $4.2 million. GAAP net income for the third quarter of 2010 was $2.3 million, or $0.03 per share compared with a GAAP loss of $12.9 million or $0.21 per share in the year-ago quarter. Mario Rivas, President & CEO, commented, “The strong revenue achieved in the third quarter of 18.6% sequential growth, which was higher than our previous guidance of 11% sequential growth, reflects our increased 3G market share position within our wireless customer base and the positive traction and market share gains realized in both WiMax and cable infrastructure within Broadband.” “Specifically, Wireless and Broadband grew sequentially by 18.1% and 20%, respectively. We believe that the third quarter benefited from stronger order pull in both Wireless and Broadband ahead of the typical fourth quarter holiday trade season, which will affect the revenue in our fourth quarter.” “Looking into 2011, we are very excited about our new product design portfolio for 3G, 4G

/ LTE and Multi Mode Multi Band (MMMB) and several design engagements with chipset providers and Tier I OEMs. In particular, we officially signed a Cooperation Agreement with a new reference design partner, initiated design activities with another new reference design partner and increased design activities with an existing reference design partner. Enhancing our business prospects longer term, we also completed negotiations on a Product Purchase Agreement with one of the larger Tier I OEMs. With the industry’s strong 3G unit growth forecasted next year in wireless handsets, we expect 2011 to be another positive year for our Company.” “In Broadband, we have a line up of new products addressing market drivers in DOCSIS 3.0 enabled devices, cable modems, CATV subscriber home gateways, hybrid line amplifiers and 75-Ohn Gain Blocks for CATV infrastructure, mobile WiMax enabled devices and small-cell Wireless infrastructure for 3G and 4G coverage including Picocells and Femtocells, which positions the Company well in 2011.” “Financially the stronger revenue in the third quarter and operating leverage in our business provided for a healthy increase in earnings, which contributed to a $3.3 million or $0.04 sequential improvement in Non-GAAP earnings per share. At the same time, we generated cash flow from operations of $5.0 million in the third quarter, contributing to our existing balance in cash, cash equivalents and short and long-term marketable securities of $96 million. Delivering on four key financial metrics – sales growth, margin expansion, earnings per share and cash generation, was especially satisfying and remains a primary focus of the Company.” In regard to the fourth quarter 2010, Tom Shields, Executive VP and CFO, commented, “With our past practice of providing revenue guidance equal to our existing order backlog, we are expecting revenue of approximately $57 million. We believe this reflects a pause in orders, caused by inventory rebalancing, by our Broadband customers following the robust 20% sequential growth reported in the third quarter and shortened order lead times by Wireless customers, particularly in Korea and China, attributable to the solid order pull in the third quarter. While Broadband revenue could decline



sequentially by approximately 25%, this is viewed as temporary given the typical fourth quarter seasonality evidenced in our business in prior years. Our current backlog for Wireless is equal to the Wireless revenue reported in the third quarter, but higher than historical fill levels. “Sequentially, we expect slightly higher gross margin and lower operating expenses, with both GAAP and Non-GAAP earnings per share in the fourth quarter to approximate third quarter levels of $0.03 and $0.06, respectively. We also expect to exit the year above $100 million in cash, cash equivalents and short and long-term marketable securities on anticipated positive cash generation in the fourth quarter.”

TriQuint Revenues For Q3 2010 Up 37% Year-Over-Year Revenue for the third quarter of 2010 was $237.0 million, with networks continuing to enjoy a strong rebound from the lows of 2009 and mobile devices showing robust growth. TriQuint Semiconductor, a leading RF front-end product and foundry services provider, has announced its financial results for the quarter ended October 2, 2010.

Commenting on the results for the quarter ended October 2, 2010, Ralph Quinsey, President and CEO, stated “I am very pleased with our results this quarter and am excited about our long term opportunities. We’ve turned in record third quarter revenue and, not including favorable non cash tax effects, generated more non-GAAP net income in Q3 than we did in either of the preceding 2 years. Our strategy of RF integration, multi-market

innovation, and growth for scale has been effective. Looking forward I expect that the RF market will remain healthy and TriQuint will benefit from a strong product roadmap built on industry leading technology platforms.”

Revenue for the third quarter of 2010 was $237.0 million, up 37% from the third quarter of 2009 and 14% sequentially. Networks continued to enjoy a strong rebound from the lows of 2009, with revenue growing 61% compared to the third quarter of 2009. Mobile Devices showed robust growth, with revenue increasing 28% sequentially and 37% compared to the third quarter of 2009. Net income for the third quarter of 2010 was $110.9 million, or $0.68 per diluted share. The company recognized a tax benefit of $72.1 million during the third quarter primarily due to the reversal of a valuation allowance previously placed on our net deferred tax assets which are mostly net operating loss carryforwards (NOLs). This reversal is a non-cash event that indicates strengthened conviction in the company’s ability to generate sufficient profits to fully utilize these NOLs. Gross margin for the third quarter of 2010 on a GAP basis was 41.3%, up from 33.8% in the third quarter of 2009. Operating expenses for the third quarter of 2010 were $59.1 million, or 24.9% of revenue, up from $47.7 million in the third quarter of 2009. The company believes fourth quarter revenue will be between $245 million and $255 million. At the midpoint, this implies revenue growth in 2010 of 33% over the prior year. Looking to 2011, the company believes continued robust growth in demand should lead to revenue growth of about 20%. For the fourth quarter of 2010, the company expects



that strong growth in the mobile devices market will lead to a non-GAAP gross margin between 41% and 42%. Non-GAAP operating expenses are expected to grow to about $59 million, or 24% of revenue. Fourth quarter net income is expected to be between $0.26 and $0.28 per share on a non-GAAP basis. The company is 91% booked to the midpoint of revenue guidance.

II-VI Compound Semiconductor Segment Earnings Inflate By 894% The firm’s latest quarterly results have increased from $343,000 to $3.41 million year-over-year. II-VI Incorporated has reported results for its first fiscal quarter ended September 30, 2010. On January 4, 2010, the Company completed its acquisition of Photop Technologies (Photop). Company results include Photop’s results for the quarter ended September 30, 2010. Bookings in the Compound Semiconductor Group for the quarter increased 61% to $21,661,000 compared to $13,435,000 in the first quarter of the last fiscal year. Revenues for the quarter in the division increased 85% to a record $21,828,000 from $11,828,000 in the first quarter of last fiscal year.

Francis J. Kramer, president and CEO said, “During

the first quarter, customer demand continued to be robust across all business segments. Company revenues increased 83%, earnings more than doubled and bookings were up 53% from the year-ago quarter. Infrared Optics revenues increased 41%, earnings grew 77% and bookings were up 47% as worldwide industrial markets gained strength. In the Near-Infrared Optics Group, Photop was the driver for the significant revenues and earnings improvements.” Kramer continued, “Strong international sales lowered the Company’s worldwide income tax rate while non-cash currency gains related to a weakening U.S. dollar added approximately $0.03 to diluted earnings per share. During the quarter, our cash balance increased $5 million and we expect to continue to generate cash for the remainder of fiscal year 2011. EBITDA increased 153% from the year-ago quarter and 14% from the June 30, 2010 quarter.” Kramer concluded, “To meet market demand, we have increased our worldwide workforce by 8% since June 30, 2010 and plan to increase U.S. employment an additional 9%. Based on first-quarter results and an improving outlook across the majority of our businesses, we are confident in raising our guidance for the remainder of the fiscal year.” For the second fiscal quarter ending December 31, 2010, the Company currently forecasts revenues to range from $110 million to $115 million and earnings per share to range from $0.48 to $0.54. Comparable results for the quarter ended December 31, 2009 were revenues of $68.8 million and earnings per share of $0.20. For the fiscal year ending June 30, 2011, the Company expects revenues to range from $445 million to $455 million and earnings per share to range from $2.00 to $2.10. Results for the year ended June 30, 2010 were revenues of $345.1 million and earnings per share of $1.25. As discussed in more detail below, actual results may differ from these forecasts due to various factors including, but not limited to, changes in product demand, competition and general economic conditions. II-VI Incorporated is a leader in crystal growth technology, is a vertically-integrated manufacturing company that creates and markets products



for diversified markets including industrial manufacturing, military and aerospace, high-power electronics and telecommunications, and thermoelectronics applications. Headquartered in Saxonburg, Pennsylvania, with manufacturing, sales, and distribution facilities worldwide, the Company produces numerous crystalline compounds including zinc selenide for infrared laser optics, silicon carbide for high-power electronic and microwave applications, and bismuth telluride for thermoelectric coolers. In the Company’s infrared optics business, II-VI Infrared manufactures optical and opto-electronic components for industrial laser and thermal imaging systems and HIGHYAG Lasertechnologie GmbH (HIGHYAG) manufactures fiber-delivered beam delivery systems and processing tools for industrial lasers. In the Company’s near-infrared optics business, VLOC manufactures near-infrared and visible light products for industrial, scientific, military and medical instruments and laser gain materials and products for solid-state YAG and YLF lasers. Photop Technologies manufactures crystal materials, optics, microchip lasers and opto-electronic modules for use in optical communication networks and other diverse consumer and commercial applications. In the Company’s military & materials business, Exotic Electro-Optics (EEO) manufactures infrared products for military applications and Pacific Rare Specialty Metals & Chemicals (PRM) produces and refines selenium and tellurium materials. In the Company’s Compound Semiconductor Group, the Wide Bandgap Materials (WBG) group manufactures and markets single crystal silicon carbide substrates for use in the solid-state lighting, wireless infrastructure, RF electronics and power switching industries; Marlow Industries (Marlow) designs and manufactures thermoelectric cooling and power generation solutions for use in defense, space, photonics, telecommunications, medical, consumer and industrial markets; and the Worldwide Materials Group (WMG) provides expertise in materials development, process development and manufacturing scale up.

RFMD Achieves Record Quarterly Revenue of $285.8 Million The firm generated $56.1 million in record quarterly free cash flow, achieving a positive net cash position. RF Micro Devices (RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, has reported financial results for its fiscal 2011 second quarter, ended October 2, 2010.

RFMD’s quarterly revenue increased approximately 12% year-over-year and 4.4% sequentially to $285.8 million. On a GAAP basis, gross margin equaled 38.0%, quarterly operating income totaled $42.4 million (or 14.8% of revenue), and quarterly net income was $35.1 million, or $0.13 per diluted share. During the quarter, RFMD generated a record $56.1 million in free cash flow (net cash provided by operating activities during the period, minus property and equipment expenditures made during the period) and achieved a positive net cash position. RFMD defines “positive net cash” as cash and cash equivalents and short-term investments exceeding the principal amount of RFMD’s convertible subordinated notes due 2012 and 2014. RFMD achieved substantial year-over-year and continued sequential revenue growth in both the Cellular Products Group (CPG) and the Multi-

Lasers ♦ financial news


Market Products Group (MPG). The firm increased sales to customers outside its largest customer by approximately 53% year-over-year, driven by market share gains at targeted handset customers and broad-based growth in MPG’s end markets. Having introduced 74 new and derivative products during the quarter targeting diverse market segments, RFMD secured major design wins during the quarter, including components for smartphones, mobile tablet devices, Smart Energy applications, high-power GaN applications, and wireless infrastructure.

Hittite Microwave reports financial results for 3rd quarter 2010 Hittite Microwave Corporation has reported revenue for the third quarter ended September 30, 2010 of $64.2 million, representing an increase of 54.7% compared with $41.5 million for the third quarter of 2009 and an increase of 6.4% compared with $60.3 million for the second quarter of 2010.

Net income for the quarter was $20.8 million, or $0.69 per diluted share, an increase of 73.8% compared with $12.0 million, or $0.40 per diluted share, for the third quarter of 2009, and an increase of 8.8% compared with $19.2 million, or $0.64 per diluted share, for the second quarter of 2010.

For the third quarter of 2010, revenue from customers in the United States was $28.1 million, or 43.8% of the company’s total revenue, and revenue from customers outside the United States was $36.1 million, or 56.2% of total revenue. Gross margin was 74.6% for the third quarter of 2010, compared with 72.0% for the third quarter of 2009 and 74.8% for the second quarter of 2010. Operating income for the third quarter was $32.2 million, or 50.2% of revenue. Total cash and cash equivalents at September 30, 2010 was $273.0 million, an increase of $31.2 million for the quarter. Business OutlookThe company expects revenue for the fourth quarter ending December 31, 2010 to be in the range of $64.5 million to $66.5 million and net income to be in the range of $20.2 million to $21.0 million, or

$0.67 to $0.69 per diluted share.

TriQuint Preliminary Q3 2010 Results Indicate Revenues Close to $238 Million TriQuint will release its third quarterly earnings on Wednesday, October 27, 2010. TriQuint Semiconductor, a leading RF front-end product and foundry services provider, expects revenue of approximately $238 million and non-GAAP net income per share of approximately $0.27 based on preliminary and unaudited results for the third quarter. Commenting on the preliminary results for the quarter ended October 2, 2010, Ralph Quinsey, President and CEO stated, “strong demand combined with outstanding execution in operations led to revenues well above our earlier expectations. I’m very pleased with our third quarter earnings and sequential revenue growth of about 15%.” Looking to the fourth quarter, the Company expects solid sequential revenue growth.

FINANCIAL NEWS Lasers

JDSU Reports Quarterly Revenue of $405.2 million & Breakeven EPS The firm expects to continue growing the business as supply constraints ease in its Optical Communications and Test and Measurement businesses. It is also further investing in incremental capacity for Optical Communications. JDSU has reported results for its first fiscal quarter


financial news ♦ Lasers

ended October 2, 2010.

On a GAAP basis, net revenue for the first fiscal quarter of 2011 was $405.2 million and net income was $0.1 million, or breakeven earnings per share. This compares to net revenue of $390.9 million and net income of $1.5 million, or $0.01 per share for the prior quarter, and net revenue of $297.8 million and net loss of $(31.9) million, or $(0.15) per share for the first fiscal quarter of 2010. “In fiscal Q1, JDSU reported its highest gross margin in five years and operating margin that was above our previously stated guidance,” said Tom Waechter, JDSU’s President and CEO. “We expect to continue growing the business as supply constraints ease in our Optical Communications and Test and Measurement businesses and we invest in incremental capacity for Optical Communications. Our balance sheet remains strong and we generated over $35 million of cash from operations during the quarter.” For the second quarter of fiscal 2011, ending January 1, 2011, the Company expects non-GAAP net revenue to be in the range of $425 to $450 million. The Company has posted slides outlining its latest financial results concurrent with the earnings press release. These slides are now available on www.jdsu.com/investors under the “Financial Information” section. JDSU enables broadband and optical innovation in the communications, commercial and consumer markets. JDSU is a leading provider of communications test and measurement solutions and optical products for telecommunications service providers, cable operators, and network equipment manufacturers. JDSU is also a leading provider of innovative

optical solutions for medical/environmental instrumentation, semiconductor processing, display, brand authentication, aerospace and defense, and decorative applications.

IPG Reports 74% Increase for Q3 The strong demand for pulsed and high power lasers are the main increase in the sales and gross margin increasing to 50%. IPG Photonics Corporation has reported its financial results for the third quarter of fiscal 2010 ended September 30, 2010.

“IPG continued its strong growth momentum in the third quarter with record revenues,” said Valentin Gapontsev, IPG Photonics’ CEO. “For the third quarter of 2010, IPG reported revenues which grew by 74% year-over-year and 19% sequentially. We achieved earnings per share of $0.28 compared with $0.05 in the third quarter of 2009 and $0.22 in the second quarter of 2010. We also demonstrated the strength of our business model, as gross margins increased to 50.0% compared with 36.5% in the third quarter of 2009 and 45.3% in the second quarter of 2010. Our operating results for the third quarter included a loss of $2.1 million, or approximately $0.03 per diluted share, relating to foreign exchange losses.” “An 88% increase in pulsed laser sales, the best selling product in the quarter, was driven by strong

Lasers ♦ financial news


demand for marking/engraving, and an 83% increase in high-power laser sales, the second-best selling product line in the quarter, benefited from the increase in the cutting OEMs and welding demand,” said Gapontsev. “Telecommunication sales increased by 160% year-over-year, and 144% sequentially, due to demand in Russia and the U.S. We had a year-over-year decline for medical sales, which was primarily related to lower sales to our large U.S. medical OEM customer. Sales for advanced applications, which tend to be more uneven, were down 18% year-over-year due to strong European sales in the third quarter of 2009. Geographically, we experienced robust growth in all major regions as the general economic climate improved.” “IPG generated $6.2 million in cash from operations and ended the quarter with $96.6 million in cash,” said Gapontsev. “Capital expenditures for the third quarter totaled $5.1 million and we continue to expect the total amount spent on capital expenditures and acquisitions to be approximately $25 million for the year.” IPG has also announced the sale of a 12.5% ownership in its Russia-based subsidiary, NTO IRE-Polus (NTO) to the Russian Corporation of Nanotechnologies (RUSNANO) for $25 million. RUSNANO was established in 2007 to invest in nanotechnology development, including projects in solar energy, nanostructured materials, medicine and biotech, mechanical engineering and metal working, optoelectronics and infrastructure. Under the terms of the agreement, RUSNANO will have options to purchase up to an additional 12.5% of NTO for an additional $25 million over the next five years if certain sales targets at NTO are achieved. IPG will maintain majority ownership and control of NTO and has a call option after three years to buy back the minority stake at a predetermined value. RUSNANO has a put option after five years to sell its minority stake to IPG at a predetermined value. “This partnership with RUSNANO enables IPG to more strategically address a large and growing market in Russia for fiber optic telecom equipment and laser systems and to increase industrial laser sales in that territory,” said Gapontsev. “With the proceeds from the transaction, we will be able

to make strategic R&D and capital expenditure investments in NTO, and develop our sales infrastructure in the Russian market. In addition, a partnership with RUSNANO will significantly expand the number of telecommunications, industrial and other important commercial relationships we have in Russia, ultimately driving growth by increasing our portfolio of customers.” “We anticipate that the sales momentum we have experienced during the first nine months of 2010 will continue through the end of the year,” said Gapontsev. “As we enter the last quarter of the year, we will continue to focus on maintaining the high quality of our products while we increase the penetration of our fiber lasers in existing and new applications, expanding our OEM and customer base, and further extend our leadership position in the markets we serve. As sales of our lasers continue to increase, we expect to benefit from the leverage in our business model.” IPG Photonics expects revenues in the range of $80 million to $86 million for the fourth quarter of 2010. The Company anticipates earnings per diluted share in the range of $0.30 to $0.35 based on 47,700,000 common shares, which includes 46,533,000 basic common shares outstanding and 1,167,000 potentially dilutive options at September 30, 2010. The Company held a conference call to review its financial results and business highlights. Interested parties can access an archived version of the webcast, which will be available for one year on IPG’s website. IPG Photonics Corporation is a manufacturer of high-power fiber lasers and amplifiers. Founded in 1990, IPG pioneered the development and commercialization of optical fiber-based lasers for use in a wide range of applications such as materials processing, advanced, telecommunications and medical. Fiber lasers have revolutionized the industry by delivering superior performance, reliability and usability at a lower total cost of ownership compared with conventional lasers, allowing end users to increase productivity and decrease operating costs.


financial news ♦ Solar

FINANCIAL NEWS Solar

First Solar Sets Schedule for 2011 Guidance Conference Call THE CEO of the PV solar manufacturer will host a conference call on Tuesday, December 14, 2010 to discuss guidance for 2011 followed by a Q&A session. First Solar will host its 2011 Guidance Conference Call after the market close on Tuesday, December 14, 2010 at 4:30 p.m. EST. Rob Gillette, CEO, Jens Meyerhoff, CFO and President, Utility Systems Group, and Bruce Sohn, President, will review the Company’s 2011 Guidance followed by Q&A. Investors may access a live webcast of this event by visiting http://investor.firstsolar.com/phoenix.zhtml?c=201491&p=irol-calendar. An audio replay of the conference call will also be available approximately two hours after the conclusion of the call. The audio replay will remain available until Sunday, December 19, 2010 at 7:30 p.m. EST and can be accessed by dialing 888-203-1112 888-203-1112 (US) or 719-457-0820 719-457-0820 (international) and entering the replay pass code 7856437. A replay of the webcast will be available on the Investor section on the Company’s web site approximately two hours after the conclusion of the call and remain available for approximately 90 calendar days. First Solar manufactures solar modules with an advanced semiconductor technology and provides comprehensive photovoltaic (PV) system solutions.

The company is delivering an economically viable alternative to fossil-fuel generation today. From raw material sourcing through end-of-life collection and recycling, First Solar is focused on creating cost-effective, renewable energy solutions that protect and enhance the environment.

Emcore Announces New $35 Million Credit Facility The firm has terminated its loan agreement with Bank of America which had a revolving credit facility of $14millionand has signed a contract for $35 with Wells Fargo. Emcore Corporation, a leading provider of compound semiconductor-based components has announced the establishment of a revolving credit facility with Wells Fargo. The asset-based credit facility provides for borrowings up to $35 million for working capital requirements, letters of credit and other general corporate purposes. The credit facility is subject to certain financial covenants and a borrowing base formula and matures in November 2013. The credit facility bears interest at a rate per annum equal to the daily three month LIBOR rate for the applicable interest period plus 3.00%. The loan is secured by substantially all of the Company’s assets located in the United States and is guaranteed by certain subsidiaries of the Company. The loan agreement contains customary representations and warranties, and affirmative and negative covenants. In connection with the new facility, Emcore terminated its prior loan agreement with Bank of America. The prior agreement provided the Company with a revolving credit facility of $14million. “We are pleased to have executed a significant increase in our credit facility. This credit facility, combined with our existing cash position and improved operating performance over the past year, ensures that we have the financial capability required to support our strategic plan,” stated Mark Weinswig, Chief Financial Officer of Emcore.

Solar ♦ financial news


Emcore Corporation is a leading provider of compound semiconductor-based components and subsystems for the fiber optics and solar power markets. Emcore’s Solar Power segment provides solar products for satellite and terrestrial applications. For satellite applications, Emcore offers high-efficiency compound semiconductor-based gallium arsenide (GaAs) solar cells, covered interconnect cells and fully integrated solar panels. For terrestrial applications, Emcore offers concentrating photovoltaic (CPV) systems for utility scale solar applications as well as offering its high-efficiency GaAs solar cells and CPV components for use in solar power concentrator systems.

Daystar Reports Net Loss of $7.4 Million The CIGS soar cell manufacturer has reported a significant net loss in Q3 2010 although it has significantly decreased debt and operating expenses.

DayStar Technologies, a developer of solar photovoltaic products based on CIGS thin-film deposition technology, has announced financial results for its third quarter ended September 30, 2010.

Net loss for the third quarter of 2010 was $7.4 million or $1.62 per share, compared with a net loss of $6.2 million or $1.66 per share in the third quarter of 2009. The net loss for the third quarter of 2010 included non-cash expenses of $6.3 million which increased the loss per share by $1.38 per share.

The net loss for the third quarter excluding non-cash charges was $1.1 million or $0.24 per share, reflecting the significant cost savings measures implemented by the Company including a reduction in workforce and decrease in occupancy costs.

The non-cash charges resulted from the restructuring of the Company’s balance sheet in an effort to extinguish certain liabilities while we pursue strategic partnerships to commercialize our product. The Company incurred $2.0 million in restructuring charges related to the impairment of certain equipment during the quarter.

Additionally, during the third quarter the Company restructured all of its existing convertible notes which resulted in the extinguishment of the original notes on the balance sheet and the recording of new notes and corresponding conversion features. This resulted in a loss on extinguishment of debt of $4.9 million during the quarter, primarily due to the fair value of the conversion features on the restructured notes. The per share losses were calculated on the weighted average common shares outstanding of 4.6 and 3.7 million for the third quarter ended September 30, 2010 and 2009, respectively.

DayStar CEO, Magnus Ryde, commented, “We are pleased with the progress we have made to significantly decrease debt and operating expenses. We were able to reduce our accounts payable and accrued expenses by $7.8 million during the quarter and we hope to complete our debt reduction program during the fourth quarter. In addition, we have significantly reduced our operating expenses.”

“The debt and operating expense reductions should better position the Company as we continue our discussions with potential strategic partners to pursue opportunities to manufacture our CIGS modules offshore. As we stated on July 22, 2010, we are pursuing partnerships to implement this strategy. Those potential partnerships, if consummated, could include joint ventures, licensing agreements, contract manufacturing agreements, a reverse merger with or an acquisition of DayStar,” he concluded.

DayStar Technologies is engaged in the development, manufacturing and marketing of solar photovoltaic products based upon CIGS thin film deposition technology.

First Solar Q3 2010 Net Sales up by $210.0m Over Q2 2010 Year over year, the net income increase was primarily driven by higher module production, lower module cost per watt and increased system sales. First Solar has announced its financial results for the third quarter ended September 25, 2010. Third



quarter 2010 net sales were $797.9 million, an increase of $210.0 million from the second quarter of 2010. The increase was primarily due to increased system sales (driven principally by the sale of the 60 megawatt (AC) Sarnia Phase 2 project in Canada), partially offset by a decline in our module average selling prices and lower blended euro exchange rates. Quarterly net sales grew 66% from $480.9 million in the third quarter of 2009, due to increased systems revenue and module production volumes, partially offset by a decline in our module average selling prices and lower blended euro exchange rates. Third quarter net income per fully diluted share was $2.04, up from $1.84 in the second quarter of 2010 and up from $1.79 in the third quarter of 2009. The third quarter net income includes a one-time tax expense of $14.7 million, or $0.17 per fully diluted share, relating to the Company’s decision to repatriate $300 million of earnings from certain of its foreign subsidiaries. Quarter over quarter, the net income increase was primarily driven by higher net sales partially offset by the one-time tax expense. Year over year, the net income increase was primarily driven by higher module production, lower module cost per watt and increased system sales, partially offset by reduced module average selling prices and the above one-time tax expense. “We continue to execute on our growth strategy and to develop sustainable markets for solar electricity,” said Rob Gillette, CEO of First Solar. “Our investment in research and development combined with plans to nearly double our manufacturing capacity will help us meet robust customer demand while continuing to drive down the cost of solar power.” The company announced net sales of $2.58 to $2.61 billion, increased from the previous guidance range of $2.5 to 2.6 billion. Earnings per fully diluted share of $7.50 to $7.65 was also given, increased from the previous guidance range of $7.00 to $7.40. Total capital spending of $550 to $600 million was reported, as well as an operating cash flow of $595 to $620 million. First Solar has posted its Third Quarter Earnings Call Presentation, which includes 2010 guidance

and additional details regarding the key assumptions relating to this guidance, in the Investors section of its website at www.firstsolar.com. A replay of the webcast will be available on the Investors section of the Company’s website approximately two hours after the conclusion of the call and remain available for approximately 90 calendar days. If you are a subscriber of FactSet or Thomson One, you can obtain a written transcript approximately two hours after the conclusion of the call. First Solar manufactures solar modules with an advanced semiconductor technology and provides comprehensive photovoltaic (PV) system solutions. The company is delivering an economically viable alternative to fossil-fuel generation today. From raw material sourcing through end-of-life collection and recycling, First Solar is focused on creating cost-effective, renewable energy solutions that protect and enhance the environment.

Emcore Regains Compliance With NASDAQ Minimum Bid Price Rule The firm has maintained a closing bid price equal to or in excess of $1.00 for a minimum of ten consecutive trading days and so the Company’s non-compliance with the requirement has been rectified. Emcore Corporation, a leading provider of compound semiconductor-based components and subsystems for the fiber optic and solar power markets, has regained compliance with the NASDAQ’s $1.00 minimum bid price requirement. On October 26, 2010, the Company received notification from the NASDAQ Stock Market that it has regained compliance with the minimum bid price requirement set forth in NASDAQ Listing Rule 5450(a)(1) after maintaining a closing bid price equal to or in excess of $1.00 for a minimum of ten consecutive trading days and that the Company’s non-compliance with the requirement announced on September 29, 2010, has been rectified.



Emcore Corporation offers a broad portfolio of compound semiconductor-based products for the broadband, fiber optics, space and solar power markets. Emcore’s Fiber Optics segment offers optical components, subsystems and systems for high speed data and telecommunications networks, cable television (CATV) and fiber-to-the-premises (FTTP). Emcore’s Photovoltaics segment provides products for both space and terrestrial applications. For space applications, Emcore offers high efficiency gallium arsenide (GaAs) solar cells, covered interconnected cells (CICs) and panels. For terrestrial applications, Emcore is adapting its high-efficiency GaAs solar cells for use in solar concentrator systems.

First Solar Doubles Revolving Credit Facility to $600 million The term of the facility has been extended from three to five years and will mature in 2015. First Solar has announced that it has amended its existing senior secured revolving credit facility, increasing it from $300 million to $600 million. The term of the facility, which was oversubscribed, has been extended from three to five years and will mature in 2015. First Solar intends to use the facility for general corporate purposes, including the issuance of letters of credit. The facility was agreed upon between First Solar and a syndicate of 13 leading international financial institutions. J.P. Morgan Securities and Bank of America/ Merrill Lynch served as Joint Lead Arrangers and Book Runners. First Solar manufactures solar modules with an advanced semiconductor technology and provides comprehensive photovoltaic (PV) system solutions. The company is delivering an economically viable alternative to fossil-fuel generation today. From raw material sourcing through end-of-life collection and recycling, First Solar is focused on creating cost-effective, renewable energy solutions that protect and enhance the environment.

Owens Design`s Solar Business Grows 152 % in Last Year The firm’s collaborative tool designs claimed to reduce risk, time, and cost in deploying new process technologies for the solar, semiconductor, and data storage markets are experiencing massive growth..

Owens Design has announced bookings for new tool designs and manufacturing contracts with companies in the solar market have increased by 152 % in the past year.

“This significant growth in Owens Design’s solar business is a testament to our success in enabling the introduction of new solar manufacturing technologies in this important emerging market,” said John Apgar, President of Owens Design. “It also demonstrates the strength of the expanding solar market in relation to how the downturn has impacted most other technology sectors. The collaborative design and manufacture of solar tools is a large growth market for us.”

Collaborative capital equipment development and manufacture offers next generation solar companies an alternate solution when an off-the-shelf equipment solution does not exist. Over the years, Owens Design has developed a proven methodology that reduces tool development costs, minimizes technical risk, maximizes platform performance and reduces the time to volume production for their customers.

By working closely with Owens Design, a solar product company can focus its efforts on developing their core technology, while Owens’ experienced team of tool development engineers focuses on integrating this new technology into a platform that has been optimized to meet their performance specifications.

Owens Design deals with multi-layer thin film (i.e. CdTe, CIGS) and crystalline silicon substrate based processes. “At Owens Design, we average between 12 and 15 new tool design and development programs per year,” said Mark Danna, Owens Design’s VP of Sales and Marketing. “As a result, we have a highly experienced engineering team and an established ‘design and build’ infrastructure



that has allowed us to refine the collaborative development process.

“Because of this collaboration, our customers’ engineering staffs can focus on developing new manufacturing processes that will establish their companies as technology leaders in their respective markets. By helping them to minimize the risk, cost, and time involved in bringing those new processes into production we play a critical role in enabling that technology leadership,” he continued.

For over 25 years, Owens Design has specialized in designing and manufacturing complex, advanced technology systems. The company focuses on the semiconductor hard disk drive and solar photovoltaic industries.

Emcore Regains Compliance With NASDAQ The firm has filed with the SEC its Quarterly Report on Form 10-Q for the third quarter of 2010 on October 5, and now complies with NASDAQ Listing Rule 5250(c)(1)

Emcore, a leading provider of compound semiconductor-based components, subsystems and systems for the fiber optics and solar power markets, has received a letter, dated October 6, 2010, from the NASDAQ Listing Qualifications Department.

The Company has regained compliance with NASDAQ Listing Rule 5250(c)(1), by filing with the SEC its Quarterly Report on Form 10-Q for the third quarter of 2010 on October 5, 2010.

Rule 5250(c)(1) requires that NASDAQ listed companies file their required periodic financial reports with the Securities and Exchange Commission on a timely basis.

Because the Company was able to regain compliance with NASDAQ Listing Rule 5250(c)(1) before the October 18, 2010 deadline NASDAQ had established for the Company to submit a plan for regaining compliance, the Company is no longer required to submit such a plan to NASDAQ.

Emcore Corporation is a leading provider of

compound semiconductor-based components, subsystems and systems for the fiber optics and solar power markets. The firm’s Photonic Systems segment is a leading developer and manufacturer of fiber-optic systems and components for a wide range of commercial and military applications including microwave fiber-optic signal transmission andprocessing, satellite earth-stations, fiber-optic gyroscopes, and terahertz sensing.

EMCORE announce unaudited financial results for 3rd Quarter EMCORE Corporation, provider of compound semiconductor-based components, subsystems, and systems for the fiber optics and solar power markets, have announced unaudited financial results for its third quarter and nine-month periods ended June 30, 2010.

Quarterly Filing Delay

As previously reported by the Company in its Current Report on Form 8-K filed with the Securities and Exchange Commission (“SEC”) on August 16, 2010, the filing of the Quarterly Report on Form 10-Q for the period ended June 30, 2010 was delayed because the Company required additional time to complete its review of the accounting for certain inventory write-downs and the allowance against a specific account receivable and whether these matters affected prior financial periods reported. The Company has now filed its Form 10-Q with the SEC and is current with NASD reporting requirements.

During the third fiscal quarter ended June 30, 2010, management determined that approximately $2.5 million of excess and obsolete inventory reserves related to the Company’s Fiber Optics segment should have been recorded in the quarter ended September 30, 2009. Accordingly, the consolidated balance sheet as of September 30, 2009 was corrected to reduce inventory by approximately $2.5 million with a corresponding increase to accumulated deficit. The impact from correcting prior period financial statements resulted in the reduction of cost of revenue of approximately $1.2 million and $0.3 million in the quarters



ended December 31, 2009 and March 31, 2010, respectively which improved profitability in these reporting periods. The Company also recorded a $0.2 million compensation-related adjustment in the quarter and year ended September 30, 2009. These corrections had no impact to net cash used in operating activities as reported on the statements of cash flows. The effect of these corrections was not considered material to any previously reported financial statement and these corrections will be made to applicable prior period financial information in future filings with the SEC.

During the quarter, the Company also recorded a $2.4 million reserve on accounts receivable due to uncertainty about its total collectability.

QUARTERLY RESULTS

Revenue: Revenue for the third fiscal quarter ended June 30, 2010 was $46.6 million. This slight sequential decline in revenue is due entirely to a timing issue with a major shipment. On a segment basis, revenue for the Photovoltaics segment was $15.1 million and revenue for the Fiber Optics segment was $31.5 million, which represents a 4% sequential increase compared to the immediate preceding quarter. During the quarter, the Photovoltaics segment experienced a quarter-end delay in shipping a satellite solar cell order to an international customer due to an unforeseen logistics issue. In August 2010, this order was shipped and the revenue will be recognized in the quarter ended September 30, 2010.

Gross Profit: Consolidated gross profit was $12.8 million and consolidated gross margin was 27.5%. On a segment basis, the third quarter Photovoltaics gross margin was 30.7% and the Fiber Optics gross margin was 25.9%.

Operating loss: After excluding certain non-cash and other adjustments as set forth in the attached non-GAAP tables, the third quarter non-GAAP consolidated operating loss was $2.8 million, an increase in loss of $1.1 million from the $1.7 million non-GAAP operating loss reported in the preceding quarter and an improvement of $4.4 million from a $7.2 million non-GAAP operating loss reported in the prior year period. During the quarter ended June 30,

2010, in addition to the accounts receivable reserve discussed above, the Company incurred a one-time non-recurring $2.8 million liability associated with a termination fee on the Company’s previously announced joint venture with Tangshan Caofeidian Investment Corporation.

Net loss: As set forth in the attached non-GAAP tables, the third quarter non-GAAP net loss per share was $0.03, an increase in loss of $0.01 per share from the $0.02 non-GAAP net loss per share reported in the preceding quarter and an improvement of $0.06 per share, from the $0.09 non-GAAP net loss per share reported in the prior year period.

9-MONTH RESULTS

Revenue: Revenue for the nine months ended June 30, 2010 was $137.2 million, an increase of $1.4 million, or 1%, from $135.8 million reported in the prior year period. On a segment basis, revenue for the Photovoltaics segment was $49.9 million, an increase of $4.1 million, or 9%, from $45.8 million reported in the prior year period and revenue for the Fiber Optics segment was $87.3 million compared to $90.0 million reported in the prior year period.

Gross Profit: Consolidated gross profit for the nine months ended June 30, 2010 was $37.9 million, an improvement of $45.7 million, from a gross loss of $7.8 million reported in the prior year period. Consolidated gross margin was 27.6%, representing a considerable improvement from the negative 5.8% gross margin reported in the prior year period. On a segment basis, the Photovoltaics gross margin was 33.5%, representing a substantial improvement from an 8.3% gross margin reported in the prior year period and the Fiber Optics gross margin was 24.2%, also a considerable improvement from a negative 13.0% gross margin reported in the prior year period.

Net Loss: The consolidated net loss for the nine months ended June 30, 2010 was $22.8 million, an improvement of $99.7 million, from a net loss of $122.5 million reported in the prior year period, with the variance due primarily to the improved operating performance at the gross margin level in fiscal 2010, and the magnitude of the non-


financial news ♦ Equipment and materials

cash impairment and other balance sheet reserve adjustments recorded in the prior year.

Order Backlog As of June 30, 2010, the Company had a consolidated order backlog of approximately $67.6 million, a slight decrease from a $68.0 million order backlog reported as of the end of the preceding quarter. On a segment basis, the quarter-end Photovoltaics order backlog totaled $42.5 million, a $1.2 million, or 3%, increase from $41.3 million reported as of the end of the preceding quarter. The quarter-end Fiber Optics order backlog totaled $25.1 million, a $1.6 million, or 6% decrease from $26.7 million reported as of the end of the preceding quarter. Order backlog is defined as purchase orders or supply agreements accepted by the Company with expected product delivery and / or services to be performed within the next twelve months.

Balance Sheet and Liquidity Update As of June 30, 2010, cash, cash equivalents, available-for-sale securities, and current restricted cash totaled approximately $16.0 million and working capital totaled $33.1 million. For the nine months ended June 30, 2010, the Company consumed $5.2 million in cash from operations compared with $30.5 million in the prior year period with the improvement due primarily to improved operating performance and working capital management. In fiscal 2010, the consumption of $5.2 million of cash was entirely related to an increase in components of working capital. Over the last year, the Company achieved positive cash flow from operations in two of the last four quarters, including the quarters ended September 30, 2009 and March 31, 2010. The Company continues to maintain a $14 million credit facility with Bank of America and a $23 million committed and available equity line of credit facility with the Commerce Court Small Cap Value Fund, Ltd.

Business Outlook In the fourth fiscal quarter ending September 30, 2010, the Company expects consolidated revenue to be $54-$55 million, which represents an approximately 16%-18% sequential revenue increase, with increases in revenue expected for both the Photovoltaics and Fiber Optics segments. Furthermore, the Company expects significant positive cash flow generated from operations in the fourth quarter.

FINANCIAL NEWS Equipment and materials

AXT Revenues Bumped Up to $26.8 million For Q3 2010 Gallium arsenide (GaAs) substrate revenue was $19.2 million, Indium phosphide (InP) substrate revenue was $955,000 and Germanium (Ge) substrate revenue was $2.3 million for the third quarter of 2010.

AXT, a leading manufacturer of compound semiconductor substrates, has reported financial results for the third quarter ended September 30, 2010.

Revenues for the third quarter of 2010 was $26.8 million, compared with $23.2 million in the second quarter of 2010, and $16.8 million in the third quarter of 2009.

Equipment and materials ♦ financial news


Total gallium arsenide (GaAs) substrate revenue was $19.2 million for the third quarter of 2010, compared with $16.2 million in the second quarter of 2010, and $13.3 million in the third quarter of 2009. Indium phosphide (InP) substrate revenue was $955,000 for the third quarter of 2010, compared with $1.1 million in the second quarter of 2010, and $688,000 in the third quarter of 2009. Germanium (Ge) substrate revenue was $2.3 million for the third quarter of 2010 compared with $1.6 million in the second quarter of 2010 and $1.8 million in the third quarter of 2009. Raw materials sales were $4.4 million for the third quarter of 2010, compared with $4.2 million in the second quarter of 2010 and $1.0 million in the third quarter of 2009. Gross margin was 39.3 % of revenue for the third quarter of 2010. By comparison, gross margin in the second quarter of 2010 was 36.8 % of revenue. Gross margin was 32.9 % of revenue for the third quarter of 2009. Operating expenses were $3.8 million in the third quarter of 2010, compared with $3.6 million in the second quarter of 2010. Operating expenses in the third quarter of 2009 were $3.7 million. Income from operations for the third quarter of 2010 was $6.7 million compared with income from operations of $5.0 million in the second quarter of 2010, and income from operations of $1.9 million in the third quarter of 2009. Net interest and other income for the third quarter of 2010 was $442,000, which included an unrealized foreign exchange gain of $210,000. This compares

with net interest and other income of $1.6 million in the second quarter of 2010, which included $1.2 million, net, sales tax refund and an unrealized foreign exchange gain of $230,000, and net interest and other income of $677,000 in the third quarter of 2009, which included an unrealized foreign exchange gain of $302,000. Net income in the third quarter of 2010 was $5.6 million or $0.17 per diluted share compared with net income of $5.5 million or $0.17 per diluted share in the second quarter of 2010, and with a net income of $2.1 million or $0.07 per diluted share in the third quarter of 2009. Excluding the $1.2 million, net, sales tax refund or $0.04 per diluted share, our net income in the second quarter of 2010 was $4.3 million or $0.13 per diluted share. “Q3 was another strong quarter for AXT,” said Morris Young, CEO. “Solid demand in all of our key end markets coupled with great execution across our organization allowed us to deliver outstanding financial results and continued increases in our market share and customer penetration. Not only did we exceed our revenue expectations, our gross margin performance was the highest it has been in many years. We continue to see growing momentum in the long-term secular trends that are fueling our growth, including the adoption of smartphones and other intelligent wireless devices, the proliferation of LED applications and the expansion of photovoltaic technology. These trends are opening up exciting opportunities for our business that we believe will extend for years to come.” AXT estimates revenue for the fourth quarter will increase to between $28.0 million and $29.0 million. The company estimates that net income per share will be between $0.15 and $0.17, which takes into account its weighted average share count of approximately 32.4 million shares. AXT designs, develops, manufactures and distributes high-performance compound and single element semiconductor substrates comprising gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) through its manufacturing facilities in Beijing, China. In addition, AXT maintains its sales, administration and customer service functions at its headquarters in Fremont, California.



The company’s substrate products are used primarily in lighting display applications, wireless communications, fiber optic communications and solar cell. Its vertical gradient freeze (VGF) technique for manufacturing semiconductor substrates provides significant benefits over other methods and enabled AXT to become a leading manufacturer of such substrates. AXT has manufacturing facilities in China and invests in five joint ventures producing raw materials.

Aixtron Announces Record Q3 2010 Results The latest quarter results have increased by 159% year-over year from €82 m to €212.7 m. Aixtron, a worldwide provider of deposition equipment to the semiconductor industry, has announced the consolidated financial results for the first nine months of 2010.

Continuing healthy demand, beneficial volume effects, and a stronger US Dollar have all contributed to the positive business performance in 9M/2010. The gross margin in 9M/2010 was 10 percentage points higher at 53% compared to 9M/2009. The 9M/2010 operating result increased year on year by 554% to €189.6m, with a 18 percentage points higher EBIT margin of 34%, leading to a net result of €130.9m or 23% return on sales. The 9M/2010 net income was up 542% year on year. The third quarter of 2010 saw a continuation of the positive growth trend in orders, revenues and profitability seen in prior quarters. Supported by ongoing high system demand, mainly fuelled by High Brightness LED backlighting and lighting

applications, and positively influenced by the stronger US Dollar, Q3 2010 revenues increased by 11% over the second quarter from €191.8m to €212.7m. The quarterly gross margin declined sequentially by 3 percentage points from 55% in Q2/2010 to 52% in Q3/2010 mainly due to the product and final acceptance mix in the quarter. Despite some offsetting effects on the operating margin from currency hedging and translation expenses, the operating result sequentially increased by 36% to €82.6m in Q3/2010 to result in an EBIT margin of 39%. Net income improved by 34% over Q2/2010 from €42.3m to €56.8m or 27% of sales. In line with Management expectations; equipment orders were recorded on a very high level (Q1/2010 €168.5m; Q2/2010 €175.4m; Q3/2010 €200.4m), continuing the strong demand trend previously predicted. Approximately 30% of the LED system orders recorded in Q3/2010 were for new generation systems, launched in Q1/2010. Paul Hyland, President & CEO at Aixtron, comments, “I am delighted that we have once more delivered on what we said we would deliver, namely a very strong set of results with excellent operational leverage. I believe it is a significant moment, when we can report an EBIT figure for the first nine months of the year that is higher than the revenue figure for the same period in the prior year.” Reflecting the positive outlook for our business for the remainder of the year, we have reiterated our full year revenue guidance of ca. €750m, which is more than USD 1 billion at today’s exchange rate, and we have increased our EBIT margin guidance to ca. 35% for the year. “We continue to see healthy demand in the current quarter, mainly for LED backlighting and increasingly for LED lighting manufacturing systems, which, in my opinion, looking ahead at the next 2-3 years, underlines the very positive outlook for the industry.” With the opening of our new R&D center this month, we plan to even further strengthen our ability to offer the most competitive and compelling technology and value propositions to our customers



available on the market,” he concludes. Reflecting the healthy business development and the current USD/EUR exchange rate levels, the Executive Board reiterates the 2010 full year revenue guidance of circa €750m and has decided to increase the EBIT margin guidance to circa 35%.

Record Third Quarter 2010 for Veeco Veeco Instruments Inc. has announced its financial results for the third quarter ended September 30, 2010. Veeco reports its results on a generally accepted accounting principles (“GAAP”) basis, and also provides results excluding certain items..

John R. Peeler, Veeco’s Chief Executive Officer, commented, “Veeco reported a milestone quarter in Q3 - including record levels of revenue of $277 million, gross margin of 49%, and EBITA of $96 million. This performance drove quarterly GAAP EPS to $2.16 per share and non-GAAP EPS to $1.46 per share, both new records for our company. We shipped over 100 MOCVD systems in the third quarter. In addition, on October 7th we completed the sale of our Metrology business to Bruker Corporation, creating a new Veeco focused on growth opportunities in our LED & Solar and Data Storage Process Equipment businesses. We generated a record $79 million in cash from operations during the quarter and are in the best financial position in our history.”

“Veeco’s third quarter bookings totaled $278 million,” continued Mr. Peeler, “with another very strong quarter in LED & Solar of $243 million, primarily MOCVD systems. Orders for MOCVD tools were placed by fifteen customers during the quarter, with strength continuing in China and additional account penetration in Taiwan. Veeco’s Data Storage orders were $35 million, as technology buys continue for new Veeco deposition systems.” The Company’s Q3 ‘10 book-to-bill ratio was 1.0, and quarter end backlog was $569 million.

On August 24th, Veeco announced that its Board of Directors had authorized the repurchase of up to $200 million of Veeco’s common stock through August 2011. During the third quarter,

Veeco purchased 930,000 shares of its stock at an average price of $34 per share, for a total of approximately $32 million.

Q4 ‘10 GuidanceRegarding the fourth quarter, Mr. Peeler commented, “We have recently experienced rescheduling of tool shipments from the fourth quarter into the first quarter by several customers in Korea and Taiwan. Due to the recent strong order rate from China, our current plan for Q4 revenue includes a significant amount of large multi-tool shipments to key Chinese customers, many of whom are currently building or expanding their facilities.

While we currently expect that these tools will ship over the next few months, timing of revenue could shift into the first quarter due to customer facility readiness.” Veeco’s fourth quarter 2010 revenue is currently forecasted to be between $285 and $320 million. Earnings per share are currently forecasted to be between $1.96 to $2.35 on a GAAP basis and $1.46 to $1.74 on a non-GAAP basis.

Mr. Peeler added, “We continue to see high levels of quoting activity for MOCVD systems, particularly in China and Taiwan, and our Data Storage business continues to experience healthy overall market conditions. We currently forecast that Veeco’s fourth quarter orders will be equal to or better than the third quarter.”

Outlook and OpportunitiesCommenting about the Company’s outlook, Mr. Peeler stated, “Further strength in MOCVD bookings currently forecasted for Q4 should enable us to exit 2010 with strong backlog, positioning Veeco for excellent revenue performance in the first half of 2011. We have built our manufacturing capacity to 120 or more tools per quarter, and will head into 2011 with the ability to flex quarterly shipments up or down as required by customer demand.”

“As we look to the future, we believe there may be an opportunity to sell thousands of MOCVD systems as LEDs fully penetrate display applications and adoption accelerates for solid state lighting in 2011 and 2012. In order to capitalize upon this opportunity, Veeco is expanding training, service and support functions in China, Taiwan and Korea, and accelerating our new product roadmap.”



“In our other businesses, quoting activity is picking up for our CIGS solar deposition systems as we make progress advancing these tools’ process capabilities for high-efficiency/low cost solar cells. Our Data Storage business continues to perform exceptionally well this year, with new products that are meeting customer technology challenges and a flexible outsourced manufacturing model. I am extremely proud of all the progress that Veeco has made in 2010 to achieve record financial results and excited about our future outlook.”

Obducat Interim Report January - September 2010

Third quarter . Third quarter sales were SEK 6.9 M (13.7) . Third quarter profits after taxes were SEK -15.3 M (-12.1) and earnings per share per before dilution were SEK -1.89 (-2.75) . Gross margin stood at 55% (49%) . Cash flow before financing activities was SEK -9.3 M (-20.9) . Order intake in Q3 was SEK 12.3 M (14.1) January - September . Sales for the period was SEK 29.5 M (43.9) . Profits for the period after taxes was SEK -46,9 M(-34.5) and earnings per share before dilution were SEK -6.23 (-7.62) . Gross margin stood at 52% (48%) . Cash flow before financing activities for the period was SEK -41.9 M (-57.7) . Order intake was SEK 29.7 M (28.1). At the close of the period the order stock amounted to SEK 14.7 M (43.9)

Riber Back on Track with Order Book Up 155% Over 2009 In view of the delivery schedule for the end of the year, Riber is expected to record over €19 million in revenues for 2010, paving the way for a further improvement in profitability. Riber, a global provider of Molecular Beam Epitaxy (MBE) tools, has published its revenues for the year ending September 2010. With strong growth in its order book, Riber is forecasting over €19 million in revenues for the full

year, combined with an improvement in its earnings.

At September 30th (€’000,000) 2010 2009 Change

Systems 2.8 5.2 -46%Services and accessories 4.2 2.6 +60%Cells and sources 0.6 1.7 -61%Total reported revenues 7.6 9.5 -20%Systems order book 12.4 4.8 +158%Services and accessories order book 2.7 2.0 +35%Cells and sources order book 4.0 0.7 x4.7Total order book 19.1 7.5 +155% On September 30th, 2010, Riber’s consolidated revenues totaled €7.6 million, compared with €9.5 million one year earlier. Revenues for the third quarter of 2010 came to €3.2 million, versus €3.6 million for the third quarter of 2009. MBE system sales represented €2.8 million at September 30th, 2010, compared with €5.2 million at September 30th, 2009. Riber points out that €2.5 million production system has been produced, but will only be delivered in December for contractual reasons. The contraction in sales of evaporation sources and cells is to be put into perspective, with a delivery schedule that is concentrated over the final quarter of the year. The services and accessories business is on track for strong growth, with sales climbing 60% compared with September 30th, 2009. The order book is up 155% in relation to September 30th, 2009, representing €19.1 million, generated by 10 MBE systems, with two production systems and eight research systems (including three systems to be delivered in 2011). It also factors in major effusion cell orders intended for the strongly growing OLED (Organic LED) and thin-layer solar



panels (CIGS technology) sectors. As well as continuing to further strengthen its position in the market for MBE research and production systems, Riber is capitalizing on the installed base and growing sales of epitaxy equipment, spare parts and accessories and corresponding services. The firm has also released a range of high value-added equipment and services on the market for strong-growth application fields (thin-layer solar panels, OLED lighting and flat screens, etc.). In view of the delivery schedule for the end of the year, Riber is expected to record over €19 million in revenues for 2010, paving the way for a further improvement in profitability. 2010 annual revenues will be released on Thursday January 13th, 2011 (after close of trading). Riber designs and produces MBE systems as well as evaporation sources and cells for the semiconductor industry. This high-technology equipment is essential for the manufacturing of compound semiconductor materials and new materials that are used in numerous consumer applications, such as new information technologies, OLED lighting and flat screens, as well as new generation solar panels.

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delano input nr01 sp01.PDF, page 1 @ Normalize ( Front Cover … › COMIN › file63739-COMPOUND SEMICONDUCTOR... · 2012-06-14 · according to the market analyst Nanomarkets. The