Datasheet Template - Modelithics · TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B- 03-03-15 -1 of 21 Disclaimer: Subject

TGF2819-FL 100W Peak Power, 20W Average Power,

32V DC – 3.5 GHz, GaN RF Power Transistor

Datasheet: Rev B- 03-03-15 - 1 of 21 - Disclaimer: Subject to change without notice

© 2014 TriQuint www.triquint.com

Applications Military radar

Civilian radar

Professional and military radio communications

Test instrumentation

Wideband or narrowband amplifiers

Jammers

Ordering Information Part ECCN Description

TGF2819-FL 3A001.b.3.a Packaged part Flanged

TGF2819-FS-EVB1 EAR99 3.1-3.5 GHz Evaluation Board

Functional Block Diagram

Pin Configuration Pin No. Label

1 VD / RF OUT

2 VG / RF IN

Flange Source

General Description The TriQuint TGF2819-FL is a greater-than 100 W Peak (20 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Product Features Frequency: DC to 3.5 GHz

Output Power (P3dB): 126 W Peak (25 Watts Avg.) at 3.3 GHz

Linear Gain: >14 dB at 3.3 GHz

Typical PAE: > 58% at 3.3 GHz

Operating Voltage: 32 V

Low thermal resistance package





RF Characterization – Load Pull Performance at 2.7 GHz (1)

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 250 mA

Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 13.6 dB

P3dB Output Power at 3 dB Gain Compression (Power Tuned) 135 W

PAE3dB Power-Added Efficiency at 3 dB Gain Compression (Eff. Tuned)

60.9 %

G3dB Gain at 3 dB Compression (Power Tuned) 10.6 dB

Notes: 1. Pulse: 100µs, 20%






69.5 %



Absolute Maximum Ratings Parameter Value Breakdown Voltage (BVDG) 145 V

Gate Voltage Range (VG) -7 to 0 V

Drain Current (ID) 12 A

Gate Current (IG) -28.8 to 33.6 mA

Power Dissipation (PD) 144 W

RF Input Power, CW, T = 25°C (PIN)

39.8 dBm

Channel Temperature (TCH) 275 °C

Mounting Temperature (30 Seconds)

320 °C

Storage Temperature -40 to 150 °C

Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.

Recommended Operating Conditions

Parameter Value Drain Voltage (VD) 32 V (Typ.)

Drain Quiescent Current (IDQ) 250 mA (Typ.)

Peak Drain Current, Pulse ( ID) 7.23 A (Typ.)

Gate Voltage (VG) -2.9 V (Typ.)

Channel Temperature (TCH) 250 °C (Max.)

Power Dissipation, CW (PD) 86 W (Max)

Power Dissipation, Pulse (PD) 144 W (Max)

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

Pulse signal: 100uS Pulse Width, 20% Duty Cycle










61.4 %








58.3 %








59.8 %







RF Characterization – Performance at 3.5GHz (1, 2)


Symbol Parameter Min Typical Max Units

GLIN Linear Gain 15.1 dB

P3dB Output Power at 3 dB Gain Compression 126 W

PAE3dB Power-Added Efficiency at 3 dB Gain Compression 49.2 %

G3dB Gain at 3 dB Compression 12.1 dB

Notes: 1. Pulse: 100µs PW, 20% 2. Performance at 3.5GHz in the 3.1 to 3.5GHz Evaluation Board

RF Characterization – Mismatched Ruggedness at 3.50 GHz (1, 2)


Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness 10:1

Notes: 1. Input power established at P3dB at matched load at the output of 3.1 – 3.5 GHz Evaluation Board 2. Pulse: 100uS PW, 20%





Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance(1) (θJC)

Vd = 32V, Tbase = 85°C 100uS, 5%, Pdiss = 100W

0.75 °C/W


Median Lifetime (TM) 1.92E09 Hours

Thermal Resistance(1) (θJC) Vd = 32V, Tbase = 85°C 100uS, 10%, Pdiss = 100W

0.79 °C/W

Channel Temperature (TCH) 164.3 °C



0.88 °C/W




1.15 °C/W

Channel Temperature (TCH) 200.3 °C


Notes: 1. Thermal resistance measured to bottom of package.

Median Lifetime

1.00E+05

1.00E+06

1.00E+07

1.00E+08

1.00E+09

1.00E+10

1.00E+11

1.00E+12

1.00E+13

1.00E+14

1.00E+15

1.00E+16

1.00E+17

1.00E+18

1.00E+19

25 50 75 100 125 150 175 200 225 250 275

Me

dia

n L

ifet

ime,

TM

(Ho

urs

)

Channel Temperature, TCH (°C)

Median Lifetime vs. Channel Temperature





Maximum Channel Temperature

120.0

140.0

160.0

180.0

200.0

220.0

240.0

260.0

1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00

Max

imu

m C

han

nel

Tem

per

atu

re (

oC

)

Pulse Width (sec)

Maximum Channel TemperaturePackage base fixed at 85 oC, Pdiss = 100 W

5% Duty Cycle

10% Duty Cycle

20% Duty Cycle

50% Duty Cycle





Load Pull Smith Charts (1, 2)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18.

Notes: 1. Test Conditions: VDS = 32 V, IDQ = 250 mA 2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%

0 0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

-0.4

-0.3

-0.2

-0.1

0.1

2.7GHz, Load-pull

51.1

50.9

50.7

12.1

11.6

11.1

56.7 54.7

52.7

Max Power is 51.3dBm

at Z = 2.704-3.398i

= -0.4692-0.393i

Max Gain is 12.4dB

at Z = 2.404-0.809i

= -0.6056-0.1047i

Max PAE is 57.1%

at Z = 1.921-1.351i

= -0.6565-0.1877i

Zo = 10

Pin_ref = 19dBm

Zs(fo) = 7.12-3.63i

Power

Gain

PAE








0 0.1

0.2

0.3

0.4

0.5

0.6

-0.4

-0.3

-0.2

-0.1

2.9GHz, Load-pull

51.6

51.4

51.2

13.3

13.3

12.8

12.3

62.260.2

58.2


at Z = 2.377-3.545i

= -0.4934-0.4278i

Max Gain is 13.6dB

at Z = 2.514-1.449i

= -0.577-0.1827i

Max PAE is 63.8%

at Z = 1.796-2.264i

= -0.6352-0.3138i

Zo = 10

Pin_ref = 20.6dBm

Zs(fo) = 8.04-7.51i

Power

Gain

PAE








0 0.1

0.2

0.3

0.4

0.5

0.6

-0.4

-0.3

-0.2

-0.1

3.1GHz, Load-pull

51.150.9

50.7

13.5

13

12.5

56.654.6

52.6


at Z = 2.962-4.499i

= -0.3771-0.478i

Max Gain is 13.8dB

at Z = 1.394-1.6i

= -0.7214-0.2418i

Max PAE is 57.9%

at Z = 1.75-2.246i

= -0.6422-0.314i

Zo = 10

Pin_ref = 25.5dBm

Zs(fo) = 12.14-8.66i

Power

Gain

PAE








0 0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-0.5

-0.4

-0.3

-0.2

-0.1

3.3GHz, Load-pull

50.850.6

50.4

13.4

12.9

12.4

53 51

49

Max Power is 51dBm

at Z = 2.435-4.724i

= -0.4055-0.534i

Max Gain is 13.8dB

at Z = 1.759-2.31i

= -0.6377-0.3218i

Max PAE is 53.7%

at Z = 1.813-2.877i

= -0.5982-0.3892i

Zo = 10

Pin_ref = 23.8dBm

Zs(fo) = 10.5-2.53i

Power

Gain

PAE








0 0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-0.5

-0.4

-0.3

-0.2

-0.1

3.5GHz, Load-pull

50.8 50.6

50.4

13

12.5

12

47.9

45.943.9


at Z = 2.293-5.249i

= -0.3761-0.5875i

Max Gain is 13.5dB

at Z = 1.314-2.805i

= -0.6653-0.4129i

Max PAE is 48.4%

at Z = 2.077-3.533i

= -0.5256-0.4462i

Zo = 10

Pin_ref = 23.7dBm

Zs(fo) = 7.59+2.45i

Power

Gain

PAE





Typical Load-pull Performance – Power Tuned(1, 2)

1. Vds = 32V, Idq = 250mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C

2. Performance measured at device’s reference planes. See page 18.

10

15

20

25

30

35

40

45

50

10

11

12

13

14

15

16

17

18

39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]

TGF2819-FL Gain and PAE vs. Pout

Zs = 7.12-j3.63Ω

Zl = 2.70-j3.40Ω

2.7GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Power Tuned

10

15

20

25

30

35

40

45

50

55

60

10

11

12

13

14

15

16

17

18

19

20

39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 8.04-j7.51Ω

Zl = 2.38-j3.55Ω


10

15

20

25

30

35

40

45

50

10

11

12

13

14

15

16

17

18

39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 12.1-j8.66Ω

Zl = 2.96-j4.50Ω


10

15

20

25

30

35

40

45

50

10

11

12

13

14

15

16

17

18

38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 10.5-j2.53Ω

Zl = 2.44-j4.72Ω


10

15

20

25

30

35

40

45

50

10

11

12

13

14

15

16

17

18

38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]

TGF2819-FLGain and PAE vs. Pout

Zs = 7.59+j2.45Ω

Zl = 2.29-j5.25Ω






Typical Load-pull Performance – Efficiency Tuned(1, 2)

3. Vds = 32V, Idq = 250mA, Pulse Width = 100uS, Duty Cycle = 20%, 25°C

4. Performance measured at device’s reference planes. See page 18.

5

10

15

20

25

30

35

40

45

50

55

60

65

8

9

10

11

12

13

14

15

16

17

18

19

20

33 35 37 39 41 43 45 47 49 51

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 7.12-j3.63Ω

Zl (fo)= 1.96-j1.93ΩZl (2fo)= 2.37+j13.1Ω

2.7GHz; Vds = 32V; Idq = 250mA; Pulse: 100us, 20%; Efficiency Tuned

20

25

30

35

40

45

50

55

60

65

70

12.0

12.5

13.0

13.5

14.0

14.5

15.0

15.5

16.0

16.5

17.0

40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 8.04-j7.51Ω

Zl (fo)= 1.81-j2.24ΩZl(2fo) = 5.92-j23.5Ω


20

25

30

35

40

45

50

55

60

65

70

10

11

12

13

14

15

16

17

18

19

20

42 43 44 45 46 47 48 49 50 51

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 12.1-j8.66Ω

Zl(fo) = 1.83-j2.30ΩZl(fo) = 1.97+j2.83Ω


20

25

30

35

40

45

50

55

60

11

12

13

14

15

16

17

18

19

40 41 42 43 44 45 46 47 48 49 50 51

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 10.5-j2.53Ω

Zl(fo) = 1.90-j2.85ΩZl(2fo) = 1.96+j1.58Ω


15

20

25

30

35

40

45

50

55

60

65

10

11

12

13

14

15

16

17

18

19

20

40 41 42 43 44 45 46 47 48 49 50 51 52

PA

E [

%]

Gain

[dB

]

Pout [dBm]


Zs = 7.61+j2.57Ω

Zl (fo)= 2.11-j3.65ΩZl (fo)= 2.39+j9.60Ω






Performance Over Temperature (1, 2)

Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.

Notes:

1. Test Conditions: VDS = 32 V, IDQ = 250 mA

2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%

120

122

124

126

128

130

132

134

136

138

140

3.1 3.2 3.3 3.4 3.5

P3dB

[W

]

Frequency [GHz]

P3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C

8

9

10

11

12

13

14

15

16

3.1 3.2 3.3 3.4 3.5

G3dB

[dB

]

Frequency [GHz]

G3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C

45

46

47

48

49

50

51

52

3.1 3.2 3.3 3.4 3.5

PA

E3dB

[%

]

Frequency [GHz]

PAE3dB vs. Frequency vs. Temperature

-40°C

-20°C

0°C

25°C

45°C

65°C

85°C





Evaluation Board Performance at 25°C (1, 2)

Performance measured in TriQuint’s 3.1 GHz to 3.5 GHz Evaluation Board at 3 dB compression.

Notes:

1. Test Conditions: VDS = 32 V, IDQ = 250 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20 %

10.0

10.5

11.0

11.5

12.0

12.5

13.0

13.5

14.0

14.5

15.0

120

122

124

126

128

130

132

134

136

138

140

3.1 3.2 3.3 3.4 3.5

Gain

[dB

]

Pow

er

[W]

Frequency [GHz]

Output Power and Gain vs. Frequency @ 25°C

Power

Gain

49

49

49

50

50

50

50

50

51

51

51

3.1 3.2 3.3 3.4 3.5

PA

E [

%]

Frequency [GHz]

PAE vs. Frequency at 25°C





Application Circuit

1

2

3

FET

CAPID=C1

RESID=R1

CAPID=C2

CAPID=C3

INDID=L1

RESID=R2

CAPID=C4

INDID=L2

CAPID=C5

CAPID=C6

CAPID=C7

CAPID=C8

DC_VID=Vg

DC_VID=Vd

PORTP=1Z=50 Ohm PORT

P=2Z=50 Ohm

Bias-up Procedure Set gate voltage (VG) to -5.0V

Set drain voltage (VD) to 32 V

Slowly increase VG until quiescent ID is 250 mA.

Apply RF signal

Bias-down Procedure Turn off RF signal

Turn off VD and wait 1 second to allow drain capacitor dissipation

Turn off VG





Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.

Bill of Materials Reference Design Value Qty Manufacturer Part Number

R1 100Ω 1 Vishay/Dale CRCW0603100RJNEA

C1, C2 5.6pF 2 ATC 600S5R6BT

C3 1.0pF 1 ATC 600S1R0BT

L1 22nH 1 Coilcraft 0805CS-220X-LB

R2 10Ω 1 Vishay/Dale CRCW060310R0JNEA

C4 10uF 1 Murata C1632X5R0J106M130AC

L2 12nH 1 Coilcraft A04T_L

C5 2400pF 1 Murata C08BL242X-5UN-X0T

C6 1000pF 1 ATC 800B102JT50XT

C7 220uF 1 United Chemi-Con EMVY500ADA221MJA0G

C8 15pF 1 ATC 600S150JT250XT

R1 C2

L2

C1 C3

L1R2

C4 C5

C6

C7

C8





Pin Layout

Note: The TGF2819-FL will be marked with the “TGF2819-FL” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.

Pin Description Pin Symbol Description

1 VD / RF OUT Drain voltage / RF Output

2 VG / RF IN Gate voltage / RF

3 Flange Source connected to ground

Re

fere

nce

Pla

ne

s





Mechanical Information All dimensions are in inches.

Note:

Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes.





Product Compliance Information ESD Sensitivity Ratings

Caution! ESD-Sensitive Device

ESD Rating: Class 1B Value: ≥ 500 V and < 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114

Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° C

RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

Lead Free

Halogen Free (Chlorine, Bromine)

Antimony Free

TBBP-A (C15H12Br402) Free

PFOS Free

SVHC Free

MSL Rating

The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020.

ECCN

US Department of Commerce 3A001.b.3.a

Recommended Soldering Temperature Profile





Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: [email protected] Fax: +1.972.994.8504 For technical questions and application information: Email: [email protected]

Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

http://www.triquint.com/

mailto:[email protected]

mailto:[email protected]

Documents

Datasheet Template - Modelithics · TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B- 03-03-15 -1 of 21 Disclaimer: Subject