C(2, TAB)

E(3)NG1E3C2T

G(1)

Features

• AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C• VCE(sat) = 1.85 V (typ.) @ IC = 60 A• Tail-less switching current• Tight parameter distribution• Low thermal resistance• Positive VCE(sat) temperature coefficient• Silicon carbide diode with no-reverse recovery charge is co-packaged in

freewheeling configuration

Applications• Automotive converters• Totem-pole power factor correction

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimumcompromise between conduction and switching losses to maximize the efficiency ofvery high frequency converters. Furthermore, the positive VCE(sat) temperaturecoefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery isshown at turn-off of the SiC diode and the already minimal capacitive turn-offbehavior is independent of temperature. Its high forward surge capability ensuresgood robustness during transient phases.

Product status link

STGWA60V60DWFAG

Product summary

Order code STGWA60V60DWFAG

Marking G60V60DWFAG

Package TO-247 long leads

Packing Tube

Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

STGWA60V60DWFAG

Datasheet

DS13117 - Rev 2 - October 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

ICContinuous collector current at TC = 25 °C 80 (1)

AContinuous collector current at TC = 100 °C 60

ICP (1) Pulsed collector current (tp ≤ 1 μs, TJ < 175 C) 240

VGE Gate-emitter voltage ±20 V

IF Continuous forward current at TC = 100 °C 30A

IFRM (1) Repetitive peak forward current (TC = 100 °C, TJ = 175 °C, δ = 0.1) 125

PTOT Total power dissipation at TC = 25 °C 375 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Limited by bonding wires.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJCThermal resistance junction-case IGBT 0.4

°C/WThermal resistance junction-case diode 0.9

RthJA Thermal resistance junction-ambient 50

STGWA60V60DWFAGElectrical ratings

DS13117 - Rev 2 page 2/16

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 600

V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 60 A 1.85 2.3

VGE = 15 V, IC = 60 A, TJ = 125 °C 2.15

VGE = 15 V, IC = 60 A, TJ = 175 °C 2.35

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7

VF Forward on-voltage

IF=30 A 1.45 1.88

IF=30 A, TJ = 125 °C 1.7

IF=30 A, TJ = 175 °C 1.85

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 250 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitanceVCE= 25 V, f = 1 MHz,

VGE = 0 V

- 8000 -

pFCoes Output capacitance - 280 -

Cres Reverse transfer capacitance - 170 -

Qg Total gate charge VCC = 480 V, IC = 60 A,

VGE = 0 to 15 V

(see Figure 28. Gate charge test circuit)

- 314 -

nCQge Gate-emitter charge - 48 -

Qgc Gate-collector charge - 142 -

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 400 V, IC = 60 A,

VGE = 15 V, RG = 4.7 Ω

(see Figure 27. Test circuit for inductiveload switching)

35 - ns

tr Current rise time 20 - ns

(di/dt)on Turn-on current slope 2834 - A/µs

td(off) Turn-off delay time 190 - ns

tf Current fall time 22 - ns

Eon (1) Turn-on switching energy 1.02 - mJ

Eoff (2) Turn-off switching energy 0.37 - mJ

Ets Total switching energy 1.39 - mJ

STGWA60V60DWFAGElectrical characteristics

DS13117 - Rev 2 page 3/16

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 400 V, IC = 60 A,

VGE = 15 V, RG = 4.7 Ω,

TJ = 175 °C

(see Figure 27. Test circuit for inductiveload switching)

31 - ns

tr Current rise time 24 - ns

(di/dt)on Turn-on current slope 2263 - A/µs

td(off) Turn-off delay time 228 - ns

tf Current fall time 52 - ns

Eon(1) Turn-on switching energy 0.99 - mJ

Eoff(2) Turn-off switching energy 0.78 - mJ

Ets Total switching energy 1.77 - mJ

1. Including the reverse recovery of the SiC diode.2. Including the tail of the collector current.

Table 6. SiC diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 60 A, VR = 400 V,

VGE = 15 V, dIF/dt = 2570 A/µs

(see Figure 27. Test circuit for inductiveload switching)

- 200 - ns

Qrr Reverse recovery charge - 282 - nC

Irrm Reverse recovery current - 8.5 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 30 - A/µs

Err Reverse recovery energy - 87 - µJ

trr Reverse recovery timeIF = 60 A, VR = 400 V,

VGE = 15 V, dIF/dt = 2570 A/µs,

TJ = 175 °C

(see Figure 27. Test circuit for inductiveload switching)

- 400 - ns

Qrr Reverse recovery charge - 700 - nC

Irrm Reverse recovery current - 11 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 19 - A/µs

Err Reverse recovery energy - 225 - µJ

STGWA60V60DWFAGElectrical characteristics

DS13117 - Rev 2 page 4/16

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG240920190938PDT

400

300

200

100

025 75 125 175

PTOT (W)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 2. Collector current vs case temperature

GADG260920191239CCT

80

40

025 75 125 175

IC (A)

VGE ≥ 15 V, TJ ≤ 175 °C

TC (°C)

Figure 3. Output characteristics (TJ = 25 °C)

GADG240920190943OC25

200

150

100

50

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V

VGE =9 V

VGE =11 V

VGE =13 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG240920190959OC175

200

150

100

50

00 1 2 3 4

IC (A)

VCE (V)

VGE = 15 V

VGE =7 V

VGE =9 V

VGE =13 V

VGE =11 V

Figure 5. VCE(sat) vs junction temperature

AM17143v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

-50 -25 0 25 50 75 100 125 150 175

VCE(sat)(V)

TJ (ºC)

IC= 120 A

IC= 60 A

IC = 30 A

VGE =15 V

Figure 6. VCE(sat) vs collector currentAM17144v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

10 20 30 40 50 60 70 80 90 100 110 120

VCE (V)

IC(A)

TJ = - 40 °C

TJ = 25 °C

TJ = 175 °C

VGE = 15 V

STGWA60V60DWFAGElectrical characteristics (curves)

DS13117 - Rev 2 page 5/16

Figure 7. Collector current vs. switching frequency

GADG270920191243CCS

100

80

60

40

20

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 V, RG = 22 OhmVGE = 0/15 V , TJ = 175

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG =4.7 Ω, VGE = 0/15 V , Tj = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

GADG240920191141FSOA

102

101

100

100 101 102

IC (A)

VCE (V)

tp = 1 µs

tp = 10 µs

tp = 100 µs

tp = 1 ms

Single pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V

ICP

VCE(sat) max.

Operation in this areais limited by VCE(sat)

V(BR)CES

Figure 9. Transfer characteristics

GADG240920191211TCH

200

150

100

50

05 6 7 8 9

IC (A)

VGE (V)

TJ = 25 °CTC = 175 °C

VCE = 6 V

Figure 10. Diode VF vs forward current

GADG240920191223DVF

4

3

2

1

00 25 50 75 100

VF (V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

VCE= VGE

IC= 1mA

AM17149v1

0.6

0.7

0.8

0.9

1.0

1.1

-50 -25 0 25 50 75 100 125 150 175

VGE(th)(norm.)

TJ (ºC)

Figure 12. Normalized V(BR)CES vs junction temperature

AM17150v1

0.9

1.0

1.1

-50 -25 0 25 50 75 100 125 150 175

V(BR)CES

TJ(ºC)

IC= 2 mA

(norm.)

STGWA60V60DWFAGElectrical characteristics (curves)

DS13117 - Rev 2 page 6/16

Figure 13. Capacitance variations

GADG240920191251CVR

10 4

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VCE (V)

Cies

Coes

Cresf = 1 MHz

Figure 14. Gate charge vs gate-emitter voltage

GADG260920191246GCGE

16

12

8

4

00 100 200 300

VGE (V)

Qg (nC)

8 6

Figure 15. Switching energy vs collector current

GADG240920191310SLC

3

2

1

00 20 40 60 80 100

E (mJ)

IC (A)

VCC = 400 V, RG = 4.7 Ω, VGE = 15 V, TJ=175

Figure 16. Switching energy vs temperature

GADG260920191250SLT

1.6

1.2

0.8

0.4

0.00 50 100 150

E (mJ)

Etot

Eoff

TJ (°C)

Eon

VCC = 400 V, IC = 60 A, Rg = 4.7 Ω, VGE = 15 V

Figure 17. Switching energy vs collector emitter voltage

GADG270920190946SLV

2.5

2.0

1.5

1.0

0.5

0.0150 250 350 450

E (mJ)

VCE (V)

Etot

Eoff

Eon

6 4.7

Figure 18. Switching energy vs gate resistance

GADG260920191254SLG

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.00 5 10 15 20

E (mJ)

RG (Ω)

Etot

Eoff

Eon

STGWA60V60DWFAGElectrical characteristics (curves)

DS13117 - Rev 2 page 7/16

Figure 19. Switching times vs collector current

GADG190920191325STC

10 2

10 1

10 0 0 40 80

t (ns)

IC (A)

4.7

td(off)

tf

tr

td(on)

Figure 20. Switching times vs gate resistance

GADG250920191208STR

10 2

10 1 0 5 10 15 20

t (ns)

RG (Ω)

td(off)

tf

tr

td(on)

IC=60 A

Figure 21. Reverse recovery current vs diode currentslope

GADG250920191223RRC

16

12

8

4

0500 1500 2500 3500 4500

Irrm (A)

di/dt(A/µs)

TJ = 25 °C

TJ = 175 °C

F,

Figure 22. Reverse recovery time vs diode current slope

GADG190920191327RRT

400

300

200

100

0500 1500 2500 3500

trr (ns) IF 6 A,

TJ = 175 °C

TJ = 25 °C

di/dt(A/µs)

Figure 23. Reverse recovery charge vs diode currentslope

GADG190920191328RRQ

800

600

400

200

0500 1500 2500 3500

Qrr(nC) IF 6 A

TJ = 175 °C

TJ = 25 °C

di/dt(A/µs)

Figure 24. Reverse recovery energy vs diode currentslope

GADG190920191328RRE

240

180

120

60

0500 1500 2500 3500

Err (μJ)

di/dt(A/µs)

IF 6 A

TJ = 175 °C

TJ = 25 °C

STGWA60V60DWFAGElectrical characteristics (curves)

DS13117 - Rev 2 page 8/16

Figure 25. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 26. Thermal impedance for diode

GADG250920191251ZTH

10 -1

10 -2

10 -3

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

0.010.1

0.05

0.020.2

ton

T

duty = ton / TZth = Rthj-c * K

Single pulse

K

STGWA60V60DWFAGElectrical characteristics (curves)

DS13117 - Rev 2 page 9/16

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

GADG160420181048IG

RL

VCC

D.U.T.100 Ω IG = CONSTVi ≤ VGMAX

2200 μF

2.7 kΩ

PW1 kΩ

47 kΩ

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts tf

Qrr

IRRM

STGWA60V60DWFAGTest circuits

DS13117 - Rev 2 page 10/16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGWA60V60DWFAGPackage information

DS13117 - Rev 2 page 11/16

4.1 TO-247 long leads package information

Figure 31. TO-247 long leads package outline

8463846_2_F

STGWA60V60DWFAGTO-247 long leads package information

DS13117 - Rev 2 page 12/16

Table 7. TO-247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16 1.26

b2 3.25

b3 2.25

c 0.59 0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1 4.30

P 3.50 3.60 3.70

Q 5.60 6.00

S 6.05 6.15 6.25

STGWA60V60DWFAGTO-247 long leads package information

DS13117 - Rev 2 page 13/16

Revision history

Table 8. Document revision history

Date Version Changes

01-Oct-2019 1 First release.

23-Oct-2019 2 Modified Table 3. Static characteristics.

STGWA60V60DWFAG

DS13117 - Rev 2 page 14/16

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STGWA60V60DWFAGContents

DS13117 - Rev 2 page 15/16

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

STGWA60V60DWFAG

DS13117 - Rev 2 page 16/16