This is information on a product in full production.

February 2014 DocID024403 Rev 3 1/17

17

STGW60H60DLFB STGWT60H60DLFB

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

Datasheet - production data

Figure 1. Internal schematic diagram

Features• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Low VF soft recovery co-packaged diode

• Lead free package

Applications• Induction heating

• Microwave oven

• Resonant converters

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

TO-247 TO-3P

12

3

12

3

TAB

C (2 or TAB)

G (1)

E (3)

Table 1. Device summary

Order code Marking Package Packaging

STGW60H60DLFB GW60H60DLFB TO-247 Tube

STGWT60H60DLFB GWT60H60DLFB TO-3P Tube

www.st.com

Contents STGW60H60DLFB, STGWT60H60DLFB

2/17 DocID024403 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

DocID024403 Rev 3 3/17

STGW60H60DLFB, STGWT60H60DLFB Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC Continuous collector current at TC = 25 °C 80(1)

1. Current level is limited by bond wires

A

IC Continuous collector current at TC = 100 °C 60 A

ICP(2)

2. Pulse width limited by maximum junction temperature

Pulsed collector current 240 A

VGE Gate-emitter voltage ±20 V

IF Continuous forward current at TC = 25 °C 80(1) A

IF Continuous forward current at TC = 100 °C 60 A

IFP(2) Pulsed forward current 240 A

PTOT Total dissipation at TC = 25 °C 375 W

TSTG Storage temperature range - 55 to 150 °C

TJ Operating junction temperature - 55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.4 °C/W

RthJC Thermal resistance junction-case diode 1.47 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB

4/17 DocID024403 Rev 3

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES

Collector-emitter breakdown voltage(VGE = 0)

IC = 2 mA 600 V

VCE(sat)Collector-emitter saturation voltage

VGE = 15 V, IC = 60 A 1.6 2

VVGE = 15 V, IC = 60 ATJ = 125 °C

1.75

VGE = 15 V, IC = 60 A

TJ = 175 °C1.85

VF Forward on-voltage

IF = 60 A 1.8 2.1

VIF = 60 A TJ = 125 °C 1.55

IF = 60 A TJ = 175 °C 1.5

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICESCollector cut-off current (VGE = 0)

VCE = 600 V 25 µA

IGESGate-emitter leakage current (VCE = 0)

VGE = ± 20 V 250 nA

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0

- 7792 - pF

Coes Output capacitance - 262 - pF

CresReverse transfer capacitance

- 158 - pF

Qg Total gate chargeVCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 27

- 306 - nC

Qge Gate-emitter charge - 126 - nC

Qgc Gate-collector charge - 58 - nC

DocID024403 Rev 3 5/17

STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics

Table 6. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(off) Turn-off delay time VCE = 400 V, IC = 60 A,

RG = 5 Ω, VGE = 15 V, see Figure 25

160 ns

tf Current fall time - 18 - ns

Eoff(1)

1. Turn-off losses include also the tail of the collector current.

Turn-off switching losses - 626 - µJ

td(off) Turn-off delay time VCE = 400 V, IC = 60 A,

RG = 5 Ω, VGE = 15 V,TJ = 175 °C, see Figure 25

184 ns

tf Current fall time - 117 - ns

Eoff(1) Turn-off switching losses - 1017 - µJ

Table 7. IGBT switching characteristics (capacitive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eoff(1)

1. Turn-off losses include also the tail of the collector current.

Turn-off switching losses

VCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, see Figure 26

- 450 -

µJVCC = 320 V, RG = 10 Ω, IC = 60 A, L = 100 µH, Csnub = 20 nF, TJ = 175 °C, see Figure 26

- 785 -

Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB

6/17 DocID024403 Rev 3

2.1 Electrical characteristics (curves)

Figure 2. Power dissipation vs. case temperature

Figure 3. Collector current vs. case temperature

Figure 4. Output characteristics (TJ = 25°C) Figure 5. Output characteristics (TJ = 175°C)

Ptot

150

100

50

00 25 TC(°C)

(W)

100

200

50 75

250

175125 150

300

350

GIPD021020131435FSR IC

30

20

10

00 25 TC(°C)

(A)

100

40

50 75

50

60

70

175

VGE ≥ 15V, TJ ≤ 175 °C

125 150

80

GIPD021020131439FSR

IC

100

50

00 1 VCE(V)

(A)

4

150

2 3

200VGE=15V

9V

11V

GIPD021020131443FSR IC

150

100

50

00 1 VCE(V)

(A)

4

200

2 3

VGE=15V

7V

11V

9V

GIPD021020131448FSR

Figure 6. VCE(sat) vs. junction temperature Figure 7. VCE(sat) vs. collector current

C

VCE(sat)

1.8

1.6

1.4

1.2-50 TJ(°C)

(V)

100

2

0 50

2.2

150

2.4

2.6 VGE= 15V IC= 120A

IC= 60A

IC= 30A

GIPD021020131457FSR VCE(sat)

1.6

1.4

1.2

1.0

0 IC(A)

(V)

60

1.8

20 40

2

80

2.2

VGE= 15V

TJ= -40°C

TJ= 25°C

TJ= 175°C2.4

0.8100 120

GIPD021020131500FSR

DocID024403 Rev 3 7/17

STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics

Figure 8. Collector current vs. switching frequency

Figure 9. Forward bias safe operating area

IC

60

40

20

01 f(kHz)

(A)

80

10

100

Rectangular current shape(duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,

VGE = 0/15 V, TJ = 175 °C)

TC= 80°C

TC= 100°C

120

GIPD021020131506FSR

C = 25°C,

IC

100

10

1

0.11 VCE(V)

(A)

10

10 μs

100 μs

1 msSingle pulse

Tc= 25°C, TJ<= 175°CVGE= 15V

100

GIPD021020131512FSR

Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current

IC

150

100

50

07 VGE(V)

(A)

13

200

9 11

TJ=175°C

-40°C

25°C

VCE=10V

GIPD021020131522FSR

J

VF

2

1.6

1.2

0.820 IF(A)

(V)

2.4

40

TJ= 175°C

60 80 100 120

TJ= 25°C

TJ= -40°C

GIPD021020131534FSR

Figure 12. Normalized VGE(th) vs junction temperature

Figure 13. Normalized V(BR)CES vs. junction temperature

VGE(th)

1.1

1.0

0.6-50 TJ(°C)

(norm)

0 50 100 150

IC= 1mAVCE= VGE

0.7

0.8

0.9

GIPD021020131540FSRV(BR)CES

1.1

1.0

0.9-50 TJ(°C)

(norm)

0 50 100 150

IC= 2mA

GIPD021020131546FSR

Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB

8/17 DocID024403 Rev 3

Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage

C

10VCE(V)

(pF)

0.1 1 10

Cies

100

1000

10000

Coes

Cres

GIPD021020131619FSR VGE

16

8

0Qg(nC)

(V)

0 100

IC= 60AIGE= 1mA

VCC= 520V

2

4

6

200

10

12

14

300

GIPD021020131623FSR

Figure 16. Switching-off loss vs collector current

Figure 17. Switching-off loss vs gate resistance

E

0IC(A)

(μJ)

0 20 40

500

1000

1500

60 80

2000

2500

EOFF

3000VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C

100 120

GIPD021020131627FSR E

500RG(Ω)

(μJ)

2 6 10

1000

1500

2000

14 18 22

EOFF

VCC = 400 V, VGE = 15 V, IC = 60 A, TJ = 175 °C

GIPD021020131631FSR

Figure 18. Switching-off loss vs temperature Figure 19. Switching-off loss vs collector-emitter voltage

E

800TJ(°C)

(μJ)

25 50 75

900

1000

1100

100 150

EOFF

VCC= 400V, VGE= 15V, RG= 10Ω, IC= 60A

2100

1100

125

GIPD021020131634FSR E

500VCE(V)

(μJ)

100 200 300

800

1100

1400

400

EOFF

TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 60A

500

1700

GIPD041020131010FSR

DocID024403 Rev 3 9/17

STGW60H60DLFB, STGWT60H60DLFB Electrical characteristics

Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance

t

1IC(A)

(ns)

0 40 80

100

120

tf

TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V

tdoff

10

160

GIPD021020131641FSR t

10RG(Ω)

(ns)

2 6 10

100

14

tf

TJ= 175°C, VGE= 15V, IC= 60A, VCC= 400V

tdoff

18 22

GIPD021020131653FSR

Figure 22. Switching-off losses vs. capacitive load

E

100Csnub(nF)

(μJ)

0 20 40

600

60

Rg= 10Ω, VGE= 15V, IC= 60A, VCC= 320V,

Lsnub= 0.1mH

80 100

TJ= 175°C

TJ= 25°C

200

300

400

500

700

800

900

GIPD021020131657FSR

Electrical characteristics STGW60H60DLFB, STGWT60H60DLFB

10/17 DocID024403 Rev 3

Figure 23. Thermal impedance for IGBT

Figure 24. Thermal impedance for diode

ZthTO2T_A

10-5 10-4 10-3 10-2 10-1 tp (s)10-2

10-1

K

Single pulse

d=0.5

0.01

0.02

0.05

0.1

0.2

DocID024403 Rev 3 11/17

STGW60H60DLFB, STGWT60H60DLFB Test circuits

3 Test circuits

Figure 25. Test circuit for inductive load switching

Figure 26. Test circuit for capacitive load switching

Figure 27. Gate charge test circuit Figure 28. Switching waveform

Figure 29. Diode recovery time waveform

AM01504v1 AM17096v1

Csnub

AM01505v1 AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

Toff

Tf

Tr(Voff)

Tcross

90%

10%

AM01507v1

IRRM

IF

di/dt

trr

ta tb

Qrr

IRRM

t

VF

dv/dt

Package mechanical data STGW60H60DLFB, STGWT60H60DLFB

12/17 DocID024403 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Figure 30. TO-247 drawing

0075325_G

DocID024403 Rev 3 13/17

STGW60H60DLFB, STGWT60H60DLFB Package mechanical data

Table 8. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

Package mechanical data STGW60H60DLFB, STGWT60H60DLFB

14/17 DocID024403 Rev 3

Figure 31. TO-3P drawing

8045950_A

DocID024403 Rev 3 15/17

STGW60H60DLFB, STGWT60H60DLFB Package mechanical data

Table 9. TO-3P mechanical data

Dim.mm

Min. Typ. Max.

A 4.60 5

A1 1.45 1.50 1.65

A2 1.20 1.40 1.60

b 0.80 1 1.20

b1 1.80 2.20

b2 2.80 3.20

c 0.55 0.60 0.75

D 19.70 19.90 20.10

D1 13.90

E 15.40 15.80

E1 13.60

E2 9.60

e 5.15 5.45 5.75

L 19.50 20 20.50

L1 3.50

L2 18.20 18.40 18.60

øP 3.10 3.30

Q 5

Q1 3.80

Revision history STGW60H60DLFB, STGWT60H60DLFB

16/17 DocID024403 Rev 3

5 Revision history

Table 10. Document revision history

Date Revision Changes

10-Apr-2013 1 Initial release.

04-Oct-2013 2Document status changed from preliminary to production data.Added Section 2.1: Electrical characteristics (curves).Minor text changes.

24-Feb-2014 3 Updated title and description in cover page.

DocID024403 Rev 3 17/17

STGW60H60DLFB, STGWT60H60DLFB

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