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CURRICULUM VITAE Stephen J. Pearton Professor, Department of Materials Science and Engineering,

University of Florida Adjunct Professor, Physics Department, University of Florida

Education 1975 - 1977 B.Sc. Physics, University of Tasmania 1977 - 1978 B.Sc. (Honours) First Class, University of Tasmania 1979 - 1981 Ph.D. University of Tasmania

(Work performed at Australian Atomic Energy Commission, Lucas, Heights)

Scholarships 1978 University Honours Scholarship (University of Tasmania) 1979 - 1981 Australian Institute of Nuclear Science and Engineering

Postgraduate Studentship (two given in Australia each year) Professional Experience 1984 - 1994 Member Technical Staff, AT&T Bell Labs, Murray Hill, NJ,

07974. 1982 - 1983 Postdoctoral Research Associate, Department of Instrument

Science and Engineering, Lawrence Berkeley Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley (joint appointment).

1981 - 1982 Experimental Officer, Semiconductor and Radiation Physics Section, Applied Physics Division, Australian Atomic Energy Commission.

Interests: Processing and characterization of semiconductor materials for high speed

electronic and photonic devices. Australian Atomic Energy Commission Technical Notes 1. "Instrumentation for DLTS of Semiconductors," Williams, S.J. Pearton and Alexiev,

AP/TN 147 (1980). 2. "A Method for Observing Shallow Level Impurities in Semiconductors," S.J. Pearton and

Tavendale, AP/TN 148 (1980). 3. "A Search for Magnetic Field Effects in Deep Level Defects in Semiconductors," S.J.

Pearton, Williams and Tavendale, AP/TN 150 (1980).

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4. "Fast Neutron and Knock-On Proton Damage in Ge," S.J. Pearton, AP/TN 151 (1980). 5. "Electrical Properties of Polycrystalline GaAs," S.J. Pearton and Lee, AP/TN 152

(1980). 6. "Electrical Properties of Polycrystalline Ge," S.J. Pearton and Lee, AP/TN 153 (1980). 7. "Electrical Properties of γ-Irradiated Polycrystalline GaAs and Ge," S.J. Pearton, AP/TN

156 (1981). 8. "Electrical Stimulation of Defects in Radiation Damaged Ge," S.J. Pearton, P/TN 161

(1981). 9. "DLTS System Manual," S.J. Pearton, AP/TN 165 (1981). Conference Papers 1. "Deep Level Transient Capacitance Spectroscopy of Point Defects in Semiconductors for

Nuclear Radiation Detection," S.J. Pearton, Tavendale and Williams, 12th Australian Spectroscopy Conference, UNSW, Aug. 1980. Reprinted as AP/TN 149 (1980).

2. "Deep Level Impurities in Germanium and Silicon: Low Temperature Passivation or Removal Techniques," S.J. Pearton, A.J. Tavendale, J.M. Kahn, and E.E. Haller, presented at IEEE Nucl. Sci. Symposium, San Francisco, Oct. 1983. LBL-15943 and IEEE Trans ns 31, 326 (1984)

3. "Hydrogen Plasma Processing of III-V Materials," S.J. Pearton, E.E. Haller and A.G. Elliot, Third Conference on Semi-Insulating III-V Materials, Kah-nee-ta, Warm Springs, Oregon, April 24-26, 1984. (abstract only) LBL-17008.

4. "Low Temperature Atomic Hydrogen Diffusivity in Si and Ge," J.M. Kahn, S.J. Pearton and E.E. Haller, Bull. Am. Phys. Soc. 29, 208 (1984). LBL-17034 and presented at Am. Phys. Soc. meeting March (1984) Detroit.

5. "The Properties of Hydrogen in Crystalline Si," S.J. Pearton, 13th Intl. Conf. Defects in Semicond., and J. Electron Mat. 14, 737 (1984).

6. "Novel Deep Donors in As-Grown Ultrapure Ge," G.S. Hubbard, E.E. Haller and S.J. Pearton, 13th Intl. Conf. Defects in Semicond. and J. Electron Mat. 14, 903 (1984).

7. "The Effect of a Deep Donor Band on the Resolution of Reverse Electrode Ge Radiation Detectors," G.S. Hubbard, E.E. Haller and S.J. Pearton, IEEE Nucl. Sci. Symp. Oct. 1984 and IEEE Trans. NS 32 (1985).

8. "Rapid Annealing of GaAs and Related Compounds," J.S. Williams and S.J. Pearton, MRS Fall Meeting 1984 and Mat. Res. Soc. Symp. Proc. 35, 427 (1985).

9. "Rapid Thermal Annealing in GaAs IC Processing," S.J. Pearton, K.D. Cummings, and G.P. Vella-Coleiro., State of the Art Program on Compound Semiconductors, Toronto, May 12-17, 1985 Electrochemical Society Spring Meeting.

10. "Diffusion Phenomena and Defect Generation in Rapidly Annealed GaAs," K.D. Cummings and S.J. Pearton, Bull. Am. Phys. Soc. 30, 257 (1985) and presented at Am. Phys. Soc. Meeting, March 1985, Baltimore.

11. "Hydrogen Passivation of Shallow Level Impurities in Semiconductors," S.J. Pearton and A.J. Tavendale, Gordon Conference on Point Defects in Semiconductors, Plymouth, NH, July 1985.

12. "Donor Neutralization in n-type GaAs by Atomic Hydrogen," J. Chevallier, W.C. Dautremont-Smith, S.J. Pearton, C.W. Tu and A. Jalil, Proc. 3rd Intl. Symp. on Dry

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Etching and Plasma Deposition in Microelectronics, pp. 161 (1986). 13. "Hydrogen on Semiconductor Surfaces," J.W. Corbett, D. Peak, S.J. Pearton and A.G.

Sganga, NATO meeting on Hydrogen in Materials, Rhodes, Greece, Sept. 1985, Hydrogen in Disordered and Amphorous Solids, ed. Bambakidis and Bauman (Plenum, NY 1986) pp. 61.

14. "Influence of Crystal Growth Parameters and Annealing on the Uniformity of GaAs Substrates," R. Caruso, K.D. Cummings, A.S. Jordan, S.J. Pearton, V. Swaminathan, A.R. Von Neida and M.S. Young, Electrochemical Society Meeting, Las Vegas, October 1985.

15. "Rapid Annealing of GaAs: Uniformity and Temperature Dependence of Activation," K.D. Cummings, S.J. Pearton and G.P. Vella-Colerio, MRS Fall Meeting, Boston, 1985 and Mat. Res. Soc. Proc. Symp. 51, 375 (1986).

16. "Electrical Transport Studies of the H-related Compensating Donor in B-doped Si Diodes," A.J. Tavendale, A.A. Williams, D. Alexiev and S.J. Pearton, MRS Falll Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 59, 469 (1986).

17. "Hydrogen Passivation of Oxygen Donors in Si," S.J. Pearton, A. Chantre, L.C. Kimerling, K.D. Cummings and W.C. Dautremont-Smith, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 59, 475 (1986).

18. "Hydrogen in Crystalline Si," S.J. Pearton, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 59, 457 (1986).

19. "Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs," D.C. Jacobson, S.J. Pearton, R. Hull, J.M. Poate and J.S. Williams, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 52, 361 (1986).

20. "Transient Thermal Processing of GaAs," S.J. Pearton, J.M. Gibson,, D.C. Jacobson, J.M. Poate, J.S. Williams and D.O. Boerma, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 52, 351 (1986).

21. "Hydrogen in Si - Unanswered Questions," S.J. Pearton, MRS Fall Meeting, Boston 1985 and Mat. Res. Soc. Symp. Proc. 59, 11 (1986).

22. "Ion Implantation in GaAs-Activation and Residual Defects," S.J. Pearton, J.M. Poate, F. Sette, J.M. Gibson, D.C. Jacobson and J.S. Williams, Ion Beam Modification of Materials, Catania, Italy, June 1986, Nucl. Instr. Meth. in Physics Research B19/20, 369 (1987).

23. "Low Temperature Injection Mechanisms for Acceptor-Neutralizing Species in Si," S.J. Pearton, A.J. Tavendale, A.A. Williams and D. Alexiev, 5th Intl. Symp. on Si Matl. and Techn., ECS Meeting, Fall 1986, Semiconductor Silicon, 1986, pp. 826.

24. "Correlation of Material Parameters with Improved Uniformity of Annealed or In-Alloyed GaAs Substrates," C.R. Abernathy, R. Caruso, K.D. Cummings, P. Dobrilla, M.L. Gray, A.S. Jordan and S.J. Pearton, Electrochemical Society Fall Meeting, Boston, May 1986.

25. "Implanted Dopant-Defect Interactions During Annealing of GaAs," S.J. Pearton, J.M. Gibson, D.C. Jacobson, J.M. Paote, J.S. Williams and D.O. Boerma, Electrochemical Society Fall Meeting, Boston, May 1986.

26. "Spin-on Glass as an Encapsulant for Annealing Si-Implanted GaAs," U.K. Chakrabarti and S.J. Pearton, Electrochemical Society Fall Meeting, Boston, May 1986.

27. "Quantum Size Effects in GaAs-Al GaAs Quantum Well Wires and Quantum Well Dots," J. Cibert, P.M. Petroff, G. Dolan, D.J. Werder, S.J. Pearton, A.C. Gossard, and

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J.H. English, Intl. Microstructure and Microdevices Conf., Gottenberg, Sweden, Aug. 1986, Superlattices and Microstructures 3, 35 (1987).

28. "Effect of Crystal Stoichiometry on Activation Efficiency in Si-Implanted GaAs," A.R. Von Neida and S.J. Pearton, Intl. Conf. on GaAs and Related Compounds, Las Vegas, Sept. 1986, Inst. Phys. Conf. Ser. 83, 57 (1987).

29. "Hydrogen Passivation of Shallow Level Impurities and Deep Level Defects in GaAs," S.J. Pearton, W.C. Dautremont-Smith, C.W. Tu, J.C Nabiby, V. Swaminathan, M. Stavola and J. Chevallier, Intl. Conf. on GaAs and Related Compounds, Las Vegas, Sept. 1986, Inst. Phys. Conf. Ser. 83, 289 (1987).

30. "Low Dimensional Systems: Quantum Wires and Quantum Boxes by MBE," A.C. Gossard, J.H. English, P.M. Petroff, J. Cibert, G.J. Dolan and S.J. Pearton, Int. Conf. on MBE, York, UK, Sept. 1986, J. Cryst. Growth 81, 101 (1987).

31. "Optical Properties of GaAs Quantum Well Wires and Quantum Well Boxes," P.M. Petroff, J. Cibert, G.J. Dolan, D.J. Weider, S.J. Pearton, A.C. Gossard and J.H. English, MRS Fall Meeting 1986, Symp. on Science and Techn. of Microfabrication, Soc. Symp. Proc. 76, 302 (1987).

32. "Compensation Mechanism in Oxygen-Implanted GaAs," K.T. Short and S.J. Pearton, State of the Art Program on Compound Semiconductor, San Diego, Oct. 1986, Electrochemical Society Fall Meeting.

33. "Local Structure of S Impurities in Implanted GaAs," F. Sette, S.J. Pearton, J.M. Poate and J.E. Rowe, Ion Beam Modification of Materials, Catania, Italy, June 1986, Nucl. Inst. Meth. in Physics Research B 19/20, 408 (1987).

34. "Photoluminescence Detection of Shallow Impurity Neutralization in GaAs," J. Weber, F. Bantien, S.J. Pearton and W.C. Dautremont-Smith, 14th Intl. Conf. Defects in Semicond., Paris, Aug. 1986, Mat. Sci. Forum 10-12, 579 (1986).

35. "Deposition of Low-Stress Encapsulants on InP and GaAs," U.K. Chakrabarti, S.J. Pearton, H. Bar, K.T. Von Neida, K.T. Short and J.W. Lee, MRS Fall Meeting 1986 and Proc. Mat. Res. Soc. Symp. 75, 691 (1987).

36. "Ultra-Thin p+ Layers in GaAs," K.T. Short, U.K. Chakrabarti and S.J. Pearton, MRS Fall Meeting 1986 and Proc. Mat. Res. Soc. Symp. 74, 737 (1987).

37. "Formation of p+ and High Resistivity Regions in GaAs-AlGaAs Heterojunctions," S.J. Pearton, J.M. Brown and K.T. Short, MRS Spring Meeting 1987 and Proc. Mat. Res. Soc. Symp. 92, 367 (1987).

38. "Implanted Dopant-Defect Interactions During Annealing of GaAs," S.J. Pearton, J.M. Gibson, D.C. Jacobson, K.T. Short, J.M. Poate, J.S. Williams and S.T. Johnson, MRS Spring Meeting 1987 and Proc. Mat. Res. Soc. Symp. 93, 59 (1987).

39. "MOCVD GaAs Grown by Direct Deposition on Si," S.M . Vernon, S.J. Pearton, J.M. Gibson, R. Caruso, C.R. Abernathy, K.T. Short, M. Stavola and D.C. Jacobson, MRS Spring Meeting 1987 and Proc. Mat. Res. Soc. Symp. 91, 187 (1987).

40. "The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial GaAs on Si Grown With or Without Ge Intermediate Layers," E.H. Lee, M.A. Awal, E.Y. Chan, R.L. Opila, L.C. Hopkins, D.C. Jacobsen and S.J. Pearton, MRS Spring Meeting 1987 and Pro. Mat. Res. Soc. Symp. 92, 347 (1987).

41. "Order and Disorder in Semiconductor Superlattices," R. Hull, S.J. Pearton, K.T. Short, C.W. Tu and A.E. White, MRS Spring Meeting 1987 and Proc. Mat. Res. Soc. Symp. 93, 153 (1987).

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42. "Direct MBE Growth of GaAs-on-Si and its Device Application," N. Chand, N. Shah, L.N. Lunardi, R. People, F. Capasso, S.J. Pearton, J. Allan, F. Ren, A.T. Macrander, F.A. Baiochi, and A.Y. Cho, 2nd AT&T Symp. on Epitaxial Growth of Semiconductor Thin Films, Murray Hill, Nov. 1986.

43. "Electrical and Structural Properties of 2" Diameter MOCVD Ga-As-on-Si," C.R. Abernathy, S.J. Pearton, R. Caruso, J.M. Gibson, K.T. Short, M. Stavola, K.D. Cummings, W.S. Hobson and A.E. White, 2nd AT&T Symp. of Epitaxial Growth of Semiconductor Thin Films, Murray Hill, Nov. 1986.

44. "Mechanism for Saturation of Electrical Activity in Highly-Doped n-GaAs," F. Sette, S.J. Pearton, J.M. Poate and J.E. Rowe, "1987 March meeting of the American Physical Soc., NY 1987 and Bull. Am. Phys. Soc. 32, 516 (1987).

45. "Acceptor Dependence of Characteristics of H-Acceptor Complexes in Si," M. Stavola, S.J. Pearton, W.C. Dautremont-Smith and J. Lopata, 1987 March meeting of the American Physical Society, NY 1987 and Bull. Am. Phys. Soc. 32 ,842 (1987).

46. "Thermal Stability of GaAs-on-Si Growth by MOCVD," S.J. Pearton, J.M. Gibson, K.T. Short, A.E. White, A. Caruso, C.R. Abernathy, D.C. Jacobsen and S.M. Vernon, 1987 March Meeting of the American Physical Society, NY 1987 and Bull. Am. Phys. Soc. 32, 879 (1987).

47. "Wafer Mapping of Material and Device Properties in Variously Prepared GaAs Substrates," A.S. Jordan, C.R. Abernathy, R. Caruso, S.J. Pearton and H. Temkin, Intl. Symp. on Defect Recognition and Image Processing in III-V Compounds, Monterey, CA, April 1987, Mat. Sci. Monographs 44, 35 (1987).

48. "Direct Growth of GaAs-on-Si by MOCVD Limitations and Future Directions," W.S. Hobson, S.J. Pearton, C.R. Abernathy, R. Caruso, K.T. Short, M. Stavola and S.M. Vernon, Electrochemical Society Fall Meeting, Hawaii, Oct. 1987, Proc. 10th Intl. Conf. on CVD 1987 87-8, 776 (1987).

49. "Effects of Crystalline Disorder in MOCVD GaAs-on-Si," C.R. Abernathy, S.J. Pearton, R. Caruso. K.T. Stavola, J.M. Brown, D.L. Malm, S.M, Vernon and W.S. Hobson, 1987 Electronic Materials Conf., Boulder, CO, June 1987.

50. "Effects of Deposition Thickness on the Properties of GaAs-on-Si," A.S. Jordan, S.J. Pearton, C.R. Abernathy, R. Caruso and S.M. Vernon, 13th Intl. Symp. on GaAs and Related Compounds, Capsis, Greece, Sept. 1987, IOP Conf. Ser. 91, 489 (1988).

51. "Lattice Matched GaAs/Ca0.45Sr0.55F2/Ge (100) Heterostructures Grown by MBE," C.W. Tu, J.C. Beggy, F.A. Baiocchi, S.M. Abys, S.J. Pearton, S.J. Hsieh, R.F. Kopf, R. Caruso and A.S. Jordan, 1987 MRS Spring Meeting, Vol. 91, 359 (1987).

52. "Growth and Characterization of Low Defect GaAs by Vertical Gradient Freese," C.R. Abernathy, A.P. Kinsella, A.S. Jordan, R. Caruso, S.J. Pearton, H. Temkin and H.H. Wade, 7th Intl. Conf. on Crystal Growth, Monterey, CA 1987, J. Cryst. Growth 88, 106 (1987).

53. "High-Quality Films of GaAs on Si on Insulator grown by MOCVD," S.M. Vernon, V. Haven, S. Bunker, C.R. Abernathy, R. Caruso, K.T. Short, S.N.G. Chu, J.H. Brown and S.J. Pearton, 1987 Electronic Matls. Conf., Boulder, CO, June 1987.

54. "Redistribution of Implanted H in p+GaAs (Zn) and n+GaAs (Si)," J.M. Zavada, R.G. Wilson, S.W. Novak, A.R. Von Neida and S.J. Pearton, 1987 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 104, 331 (1988).

55. "Hydrogen Injection into p-Si by Chemical Etching," A.J. Tavendale, A.A. Williams and

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S.J. Pearton, 1987 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 104, 285 (1988). 56. "Growth and Characterization of GaAs Based Superlattices on Si by MOCVD," W.S.

Hobson, S.J. Pearton, C.R. Abernathy, R. Caruso and K.T. Short, 1988 Spring MRS Meeting, Mat. Res. Soc. Symp. Proc. 115, 147 (1988).

57. "Activation and Interdiffusion Characteristics in Implanted GaAs-AlGaAs Heterostructures on Si," S.J. Pearton, K.S. Jones, K.T. Short and S.M. Vernon, 1988 Spring MRS Meeting, Mat. Res. Soc. Symp. Proc. 126, 97 (1988).

58. "Passivation of n-type Si by Hydrogen," K. Bergman, M. Stavola, S.J. Pearton and J. Lopata, 1987 MRS Fall Meeting and Mat. Res. Soc. Symp. Proc. 104, 281 (1988).

59. "Effects of Atomic Hydrogen Incorporation in Ga-As-on-Si," J.M. Zavada, S.J. Pearton, C.S. Wu, M. Stavola, F. Ren, J. Lapota, W.C. Dautremont-Smith and R.G. Wilson, 1988 APS March Meeting, Bull. Am. Phys. Soc. 33, 321 (1988).

60. "Ion Induced Damage and its Removal in InAs, GaSb and GaP," A.R. Von Neida, S.J. Pearton, K.T. Short, J.M. Brown, L.J. Oster and U.K. Chakrabarti, 1988 APS March Meeting, Bull. Am. Phys. Soc. 33, 740 (1988).

61. "Ion Implantation Processing of GaAs-on-Si," S.J. Pearton, K.T. Short and A.E. White, 1988 APS March Meeting, Bull. Am. Phys. Soc. 33, 740 (1988).

62. "Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP after RTA," A.R. Von Neida, S.J. Pearton, K.T. Short and J.M. Brown, 1987 MRS Fall Meeting and Mat. Res. Soc. Symp. Proc. 100, 689 (1988).

63. "RTA of InAs, GaSb and GaP," S.J. Pearton, A.R. Von Neida, J.M. Brown, K.T. Short, C.R. Abernathy, L.J. Oster and U.K. Chakrabarti, Atlanta, GA Meeting of ECS, May 1988.

64. "Characterization of GaAs-AlGaAs Heterostructures Grown on Si by MOCVD," S.J. Pearton, K.S. Jones, C.R. Abernathy, R. Caruso, S.N.G. Chu and S.M. Vernon, 1988 May ECS Meeting, Atlanta, GA.

65. "Hydrogen in Si," J.W. Corbett, J.L. Lindstrom and S.J. Pearton, 1987 MRS Fall Meeting and Mat. Res. Soc. Symp. Proc. 104, 229 (1988).

66. "Structural Studies of Impurities in III-V Compounds by EXAFS," F. Sette, S.J. Pearton, J.M. Poate and J.E. Rowe, 1987 MRS Fall Meeting and Mat. Res. Soc. Symp. Proc. 104, 515 (1988).

67. "Structural Studies of Impurities in III-V Compounds," F. Sette, S.J. Pearton, J.M. Poate and J.E. Rowe, 1988 APS Meeting, Bull. Am. Phys. Soc. 33, 739 (1988).

68. "Annealing of Heteroepitaxial Material," C.R. Abernathy, S.J. Pearton, M.B. Panish and S.N.G. Chu, 1988 May ECS Meeting, Atlanta, GA.

69. "Interation of Implanted Oxygen with Dopants in GaAs and AlGaAs," S.J. Pearton, 1988 May ECS Meeting, Atlanta, GA.

70. "Antiphase Domains in GaAs Grown by MOCVD on Si- in-Insulator," S.N.G. Chu, S. Nakahara, S.J. Pearton, T. Boone and S.M. Vernon, 1988 May ECS Meeting, Atlanta, GA.

71. "Implant Isolation of InP and InGaAs Grown by MOMBE," C.R. Abernathy, S.J. Pearton, M.B. Panish, R.A. Hamm and L.M. Lunardi, GaAs and Related Compounds, Atlanta, GA, Sept. 1988, IOP Conf. Ser. 96, 359 (1989).

72. "Growth and Characterization of MOCVD Grown InP on Si," S.M. Vernon, V.E. Haven, S.J. Pearton, A.T. Macrander, N.M. Haegel and K.T. Short, GaAs and Related Compounds, Atlanta, GA, Sept. 1988, IOP Conf. Ser. 96, 211 (1989).

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73. "Infra-red Spectroscopy of the Shallow Impurity-H Complexes in Passivated Si," M. Stavola, S.J. Pearton, K. Bergman, J. Lopata and W.C. Dautremont-Smith, 1988 APS Meeting, Bull, Am. Phys. Soc. 33, 550 (1988).

74. "Time Resolved Low-Temperature Luthodoluminescence of GaAs-AlGaAs Single Quantum Wires and Quantum Boxes," J.S. Weiner, G.J. Dolan, J. Dunsmuir, S.J. Pearton, A.C. Gossard and J.H. English, 1988 APS Meeting, Bull. Am. Phys. Soc. 33, 240 (1988).

75. "Configurations and Properties of Hydrogen in Crystalline Semiconductors," S.J. Pearton, Intl. Conf. Defects in Semiconductors, Budapest, Hungary, Aug. 1988, Mat. Sci. Forum 38-41, 25 (1989).

76. "Off-Axis Hydrogen in Acceptor-H Complexes from Uniaxial Stress Studies," K. Bergman, M. Stavo la, S.J. Pearton, J. Lopata and W.C. Dautremont-Smith, Intl. Conf. Defects in Semiconductors, Budapest, Hungary, Aug. 1988, Mat. Sci Forum 38-41, 1015 (1989).

77. "The Asymmetry and Properties of Donor-H and Acceptor-H Complexes in Si from Uniaxial Stress Studies," M. Stavola, K. Bergman, S.J. Pearton, J. Lopata and T. Hayes Intl. Conf. Shallow Imp. in Semiconductors, Linkoping, Sweden, August 1988, IOP Conf. Ser. 95, 447 (1989).

78. "Infra-Red Spectroscopy of Impurity-H Complexes in Si," M. Stavola and S.J. Pearton, Gordon Conf. in Point & Line Defects in Semiconductors, Plymouth, NH, July 1987.

79. "Ion Implantation Damage and Annealing in an AlAs/GaAs Layer Structure," A.G. Cullis, D.C. Jacobson, J.M. Poate, N.G. Chew, C.R. Whitehouse and S.J. Pearton, 1988 Fall MRS Meeting, Mat. Res. Soc. Symp. Proc. 144, 361 (1989).

80. "Ion Beam Induced Intermixing of WSi0.45 on GaAs," S.J. Pearton, K.T. Short, K.S. Jones, A.G. Baca and C.S. Wu, 1988 Fall MRS Meeting, Mat. Res. Soc. Symp. Proc. 128, 249 (1989).

81. "Material and Device Properties of 3" Diameter GaAs-m Si with Buried p-type Layers," S.J. Pearton, K.M. Lee, N.M. Haegel, C.J. Huang, S. Nakahara, F. Ren, V.J. Scarpelli and K.T. Short, 1988 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 144, 317 (1989).

82. "Temperature Dependence of Etch Rate and Residual Damage in RIE GaAs and AlGaAs," S.J. Pearton, K.T. Short, K.S. Jones, W.S. Hobson, et.al., 1988 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 129, 489 (1989).

83. "Behavior of Implanted Hydrogen in GaP Single Crystals," J.M. Zavada, R.G. Wilson, S.W. Novak, S.J. Pearton and A.R. Von Neida, 1988 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 144, 457 (1989).

84. "Implant Isolation Mechanisms in GaAs, AlGaAs, InP and InGaAs," S.J. Pearton, C.R. Abernathy, W.S. Hobson and A.E. Von Neida, 1988 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 144, 433 (1989).

85. "Recent Activities in Hydrogenation of Semiconductors," W.C. Dautremont-Smith, S.J. Pearton and M. Stavola, Intl. Workshop on H Passivation, Univ. P And M. Curie, Paris, Nov. 1988, pp. 21.

86. "Dopant Neutralization and Defect Decoration in H-Bombarded GaAs," J.M. Zavada, H.A. Jenkinson, R.G. Wilson and S.J. Pearton, Intl. Workshop on H Passivation, Univ. P and M. Curie, Paris, Nov. 1988, pp. 34.

87. "Formation of Buried Insulation Layers in GaAs-AlGaAs Heterostructures," W.S. Hobson, S.J. Pearton, C.R. Abernathy and A.E. Von Neida, 1989 Spring MRS Meeting

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and Mat. Res. Soc. Symp. Proc. 148, 397 (1989). 88. "Rapid Annealing of RIE-Induced Damage in GaAs and AlGaAs," S.J. Pearton, W.S.

Hobson, U.K. Chakrabarti, K.T. Short, A.E. White and K.S. Jones, 1989 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 146, 339 (1989).

89. "Electrical and Optical Properties of Vanadium in OMVPE-Grown GaAs," W.S. Hobson, S.J. Pearton, V. Swaminathan, A.S. Jordan, Y.J. Kao, N.M. Haegel and H. Kanber, 1989 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 145, 121 (1989).

90. "Ion Implantation Processing of GaAs and Related Compounds," S.J. Pearton, W.S. Hobson and C.R. Abernathy, 1989 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 147, 261 (1989).

91. “Growth Characterization and Electronic Device Applications of GaAs/Si," A.S. Jordan, S.J. Pearton and W.S. Hobson, 1989 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 145, 261 (1989).

92. "Effect of Hydrogenation on the Photoluminescence Properties of p-Type InP," V. Swaminathan, J. Lopata, S. Slusky, W.C. Dautremont-Smith and S.J. Pearton, Proc. Intl. Conf. on Science and Technol. of Defect Control in Semiconductors, Yokohama, Japan, Sept. 1989, pp. 879-883 (1990).

93. "Materials Aspects of Compound Semiconductor on Si Technology," E.H. Lee, M.A. Awal, S.J. Pearton, N. Chand and R. Lum, Proc. 2nd Intl. Conf. on Solid State and IC Technology, ed. M. Bangxian, pp. 730-736 (1989).

94. "Near-Surface Modifications Induced by H in Semiconductors," S.J. Pearton, Proc. 2nd

Intl. Conf. on Solid State and IC Technology, ed. M. Bangxian, pp. 56-58 (1989). 95. "Ultra-High Doping of GaAs by Carbon During MOMBE," C.R. Abernathy, S.J. Pearton,

R. Caruso, F. Ren and T. Kovalchick, Proc. 2nd Intl. Conf. on Solid State and IC Technology, ed. M. Bangxian, pp. 743-745 (1989).

96. "Hydrogen in Semiconductors," J.W. Corbett, S.J. Pearton and M. Stavola, Proc. Intl. Conf. on Science and Technol. of Defect Control in Semiconductors, Yokohama, Japan, Sept. 1989, pp. 53-64 (1990).

97. "Materials Issues of Compound Semiconductor Technology on Si," E.H. Lee, A.A. Awal, S.J. Pearton, N. Chand and R. Lum, 19th European Solid State Device Research Conf., Berlin, Sept. 11-14, 1989.

98. "CH4/H2 RIE of III-V Semiconductors - a Shallow Damage Process," T.R. Hayes, U.K. Chakrabarti, F.A. Baiocchi, G. Derkits and S.J. Pearton, 1989 Fall AVS Meeting, Boston.

99. "Fermi Resonance Effects on the Vibration Modes of H-Passivated B in Si," G.D. Watkins, W.B. Fowler, G.G. DeLeo, M. Stavola, D.M. Kozuch, S.J. Pearton and J. Lopata, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 163, 367 (1990).

100. "Evaluation of AlN and PSG as Encapsulants for GaAs and InP," U.K. Chakrabarti, H. Barz, W.C. Dautremont-Smith, S.J. Pearton and J.W. Lee, Proc. ECS Symp. on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors 90-13, 451 (1990).

101. "Ion Beam Induced Damage in RIE GaAs, AlGaAs and InP," S.J. Pearton, U.K. Chakrabarti, W.S. Hobson, F.A. Baiocch and K.S. Jones, ECS Symp. on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors 90-13, 130 (1990).

102. "Carbon Implantation in GaAs, AlGaAs and InP," S.J. Pearton, C.R. Abernathy, U.K. Chakrabarti. and W.S. Hobson, ECS Symp. on Ion Implantation and Dielectrics for

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Elemental and Compound Semiconductors 90-13, 110 (1990). 103. "Implant Isolation of III-V Semiconductors," C.R. Abernathy, S.J. Pearton and W.S.

Hobson, ECS Symp. on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors 90-13, 35 (1990).

104. "Acceptor Delta-Doping in GaAs," W.S. Hobson, S.J. Pearton and C.R. Abernathy, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 163, 855 (1990).

105. "Sn-H Complexes in GaAs," D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy and J. Lopata, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 163, 477 (1990).

106. "Surface Protection During Plasma Hydrogenation for Acceptor Passivation in InP," J. Lopata, W.C. Dautremont-Smith, S.J. Pearton, H.S. Luftman and J.W. Lee, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 163, 501 (1990).

107. "Power Deposition Damage Monitoring and End-Point Detection Using PL in RF Glow Discharges," R.A. Gottscho, A. Mitchell, S.J. Pearton and G.R. Scheller, 1989 Gaseous Electronics Conf., Bull. Am. Phys. Soc. 356, 1806 (1990).

108. "Elevated Temperature RIE of GaAs and AlGaAs in C2H6/H2," S.J. Pearton, W.S. Hobson and K.S. Jones, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 158, 425 (1990).

109. "RIE of In-Based III-V Semiconductors - Comparison of Ci and C2H6 Chemistries," S.J. Pearton, U.K. Chakrabarti, F.A. Baiocch and W.S. Hobson, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 158, 417 (1990).

110. "Ion Implant Activation and Redistribution in AlGaAs," S.J. Pearton, W.S. Hobson, A.E. Von Neida, et.al., 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 157, 665 (1990).

111. "Channeling Lattice Location of Se Implanted in InP by RBS and PIXE," Q.F. Xiao, S. Hasimoto, W.M. Gibson and S.J. Pearton, 1989 Ion Beam Analysis Conf; Nuc. Instr. Meth. B 45, 464 (1990).

112. "FETs on Lattice - Mismatched Substrates - GaAs/InP and GaAs/AlGaAs/Si," F. Ren, W.S. Hobson, S.J. Pearton, N. Chand, et al., Proc. GaAs IC Symposium (1990).

113. "Structure and Dynamics of H. Acceptor Complexes in Si and GaAs," M. Stavola, S.J. Pearton, C.R. Abernathy and J. Lopata, 1989 APS Meeting, St. Louis; Bull. Am. Phys. Soc., 34, 415 (1989).

114. "Passivation of Acceptors in InP by Hydrogen," M. Stavola, W.C. Dautremont-Smith, J. Lopata, S.J. Pearton, T.R. Hayes and V. Swaminathan, Intl. Workshop on H in InP, Lanion, France, Oct. 1989.

115. "A PL Study of Hydrogenated GaAs on InP," V. Swaminathan, U.K. Chakrabarti, W.S. Hobson, R. Caruso, J. Lopata, and S.J. Pearton, 1989 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 163, 489 (1990).

116. "In-Situ Monitoring of III-V Compound Semiconductor PL During Plasma Processing," A. Mitchell, R.A. Gottscho, G.R. Scheller and S.J. Pearton, 1989 AVS Meeting, Boston, MA.

117. "Zn Diffusion in Ga-As-AlGaAs HBT Structures," W.S. Hobson, S.J. Pearton and A.S. Jordan, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 198, 217 (1990).

118. "Schottky Contacts on Processed Surfaces," U.K. Chakrabarti, C.W. Seabury, S.J. Pearton and T.R. Hayes, TMS Meeting, Anaheim, CA, Feb. 1990.

119. "Design of Ohmic Contacts of InP-Based Laser Devices," A. Katz, S.J. Pearton, B.E. Weir, S.N.G. Chu, et al., TMS Meetings, Anaheim, CA, Feb. 1990.

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120. "Plasma Etching of InP and Related Materials in ECR CH4/H2/Ar Discharges," S.J. Pearton, U.K. Chakrabarti, A.P. Kinsella, A.B. Emerson and D. Johnson, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 190, 108 (1990).

121. "Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing," A.J. Tavendale, S.J. Pearton, A.A. Williams and D. Alexiev, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 184, 87 (1990).

122. "Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs," S.J. Pearton, F. Ren, C.R. Abernathy, A. Katz, W.S. Hobson, S.N.G. Chu and J. Kovalchick, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 181, 491 (1990.)

123. "In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaSa HBTs," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan, A.B. Emerson and A.W. Yanof, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 181, 481 (1990).

124. "GaAs-AlGaAs HBTs with C-Doped Base Layer Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan, J. Lothian and A.S. Jordan, SOTAPOCS XII, 1990 Spring ECS Meeting, Montreal, May 9, 1990, VR. 90-15, 185 (1990).

125. "Ion Beam Processing and RTA of InP and Related Materials," S.J. Pearton, 2nd Intl. Conf. InP and Related Materials, Denver, CO, April 23-25, 1990.

126. "Susceptor and Proximity RTA of InP," A. Katz, S.J. Pearton and M. Geva, 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 181, 473 (1990).

127. "Lattice Mismatched Heteroepitaxial Growth of GaAs on InP by OMVPE," U.K. Chakrabarti, W.S. Hobson, V. Swaminathan, S.J. Pearton, S. Nakahara, M. Lamont and P.M. Thomas, SPIE, Vol. 1144, 69 (1989).

128. "Hydrogen Diffusion in Crystalline Semiconductors," S.J. Pearton, J.W. Corbett and J.T. Borenstein, 6th Trieste Symp., Italy, August 27-31 (1990); Physica B 170, 85 (1991).

129. "Redistribution of Zn in GaAs-AlGaAs Heterostructures," P. Rai-Choudhury, H.L. Berkowitz, R.J. Hillard, W.S. Hobson and S.J. Pearton, SOTAPOCS X1 ECS Meeting, Oct. 1989.

130. "Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors," M.Stavola and S.J. Pearton, 4th Intl. Conf. Shallow Impurities in Semicond., London (1990), Mat. Sci. For. 65, 141 (1991).

131. "Process design for Non-Alloyed Contacts to InP-Based Laser Devices," A. Katz, W.C. Dautremont-Smith, S. Chu, S.J. Pearton, M. Geva, et.al., 1990 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 181, 401 (1990).

132. "Ion Implantation Doping and Isolation of III-V Semiconductors," S.J. Pearton, 7th Intl. Conf. Ion Beam Modification of Materials, Knoxville, TN, Sept. 1990, Nucl. Instr. Meth. B 59, 970 (1991).

133. "Low Damage Dry Etching of III-V Compound Semiconductors Using ECR Discharges," S.J. Pearton, U.K. Chakrabarti, C. Constantine and D. Johnson, 7th Intl. Conf. Ion Beam Modification of Materials, Knoxville, TN, Sept. 1990, Nucl. Instr. Meth. B 59, 1015 (1991).

134. "TEM of Epitaxial GaAs on a Variety of Si Substrates by MOCVD," J.M. Brown, S.J. Pearton, R. Caruso and M. Stavola, Proc. 45th Ann. Meeting Electron Microscopy Soc. pp. 342-343 (1987).

135. "Trimethylamine Alane: A New Robust Precursor for the MOMBE Growth of AlGaAs," C.R. Abernathy, A.S. Jordan, S.J. Pearton, D.A. Bohling and G.T. Muhr., Proc. 17th GaAs and Rel. Comp. Symp. IOP Cont. Ser. 42, 149 (1990).

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136. "The Feasibility of Using TMAl Alane as an Al Precursor for MOMBE," C.R. Abernathy, A.S. Jordan, S.J. Pearton, F. Ren, F. Baiocchi, D.A. Bohling and G.T. Muhr, Intl. Crys. Growth Meeting, Denver, July 1990, J. Cryst. Growth 109, 31 (1991).

137. "High Temperature Degradation Free RTA of GaAs and InP," S.J. Pearton, A. Katz and M. Geva, SPIE Meeting, Santa Clara, Oct. 1990, SPIE Vol. 1393 (1990).

138. "Carbon Doping of III-V Compounds Grown by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, Houston, Dec. 1989: J. Cryst. Growth 105, 375 (1990).

139. "Ion Milling Damage in InP and GaAs," S.J. Pearton, U.K. Chakrabarti and A.P. Perley, Mat. Res. Soc. Symp. Proc. 216, 507 (1991).

140. "GaAs QW Infra-Red Photodetectors Grown by OMVPE," W.S. Hobson, A. Zussman, B.F. Levine, S.J. Pearton, V. Swaminathan and L.C. Luther, Mat. Res. Soc. Symp. Proc. 216, 501 (1991).

141. "Effects of PCl3 Addition of ECR CH4/H2/Ar Plasma Etching of InP and InGaAs," S.J. Pearton, U.K. Chakrabarti and A. Katz, 3rd Intl. Conf. on InP and Related Materials, Wales, April 1990.

142. "Novel C-Doped p-Channel GaAs MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, 1991 Spring ECS Meeting, Toronto, Canada, May 1991.

143. "Characteristics of 56 MeV O+ Implantation into Si and III-V Semiconductors," 1990 S.J. Pearton, B. Jalali, J.M. Poate, C.W. Magee and K.S. Jones, Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 201, 271 (1991).

144. "Comparison of CH4/H2/Ar RIE and ECR Plasma Etching of In-Based III-V Alloys," S.J. Pearton, U.K. Chakrabarti, A. Katz and W.S. Hobson, 1991 Washington Materials Forum, Washington, Feb. 28-Mar. 1, 1991.

145. "RIE of III-V Semiconductors Using Hydrogenated Chlorofluorocarbon Mixtures," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. Derkits and A.P. Perely, 1990 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 201, 37 (1991).

146. "Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers," S.J. Pearton, et al., 1990 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc., 216, 451 (1991).

147. "Incorporation and Behavior of O in AlGaAs Grown by MOMBE Using TMAA1," C.R. Abernathy, J. Song, W.S., Hobson, S.J. Pearton, F. Ren, D.A. Bohling and G.T. Muhr, 1990 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 204, 183 (1991).

148. "AlGaAs Growth by OMVPE using TMAA1," W.S. Hobson, C.R. Abernathy, S.J. Pearton and T.D. Harris, 1990 Fall MRS Meeing and Mat. Res. Soc. Symp. Proc. 204, 189 (1991).

149. "Dry Etching Techniques and Chemistries for III-V Semiconductors," S.J. Pearton, 1990 Fall MRS Meeting and Mat. Res. Soc. Symp. Proc. 216, 277 (1991).

150. "Passivation of Carbon Acceptors in GaAs by Hydrogen," D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy, J. Lopta and W.S. Hobson, 1991 APS Meeting; Bull. Am. Phys. Soc. 36, 994 (1991).

151. "ECR Plasma Etching of III-V Optoelectronic Devices," S.J. Pearton, 2nd Intl. Meeting on Advanced Processing and Characterization Techniques 1991, Clearwater, FL, May 8-10, 1991, pp. 100-104.

152. "Buried Interconnect Structure for Symmetric SEEDs," D'Asaroff, L. Chirovisky, R.F. Kopf and S.J. Pearton, 2nd Intl. Meeting on Advanced Processing and Characterization Techniques 1991, Clearwater, FL, May 8-10, 1991, pp. 192-196.

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153. "The Search for All-Hydride MOMBE: Examination of TMAAl, TMAGa and Arsine," D.A. Bohling, G.J. Muhr, C.R. Abernathy, A.S. Jordan, S.J. Pearton and W.S. Hobson, J. Cryst. Growth 107, 1068 (1991).

154. Issues in Reactive Ion Etching," S.J. Pearton, "WOCSEMMAD, 1991, Ft. Lauderdale, FL, Feb. 17-20, 1991.

155. "Radiation-Hard HBTs," S.J. Pearton, S. Mittleman, F. Ren and S. Winter, WOCSEMMAD 1991, Ft. Lauderdale, FL, Feb. 17-20, 1991.

156. "Permeation of Cu into Si at Room Temperature," P. Jones, Y. Zhang, Y. Lui, J. Yuan, C. Ortiz, B. Baufeld, H. Bahru, J.W. Corbett and S.J. Pearton, in Defect Control in Semiconductors, ed. K. Sumino (North-Holland, Amsterdam 1990), Vol. 1, pp. 317-320.

157. "Effect of Multiple Trapping on Hydrogen Diffusion in Si," J. Brenstein, J.W. Corbett and S.J. Pearton, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 51 (1991).

158. "Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2," I. Veloarisoa, D. Kozuch, M. Stavola, R. Peale, G. Watkins, S.J. Pearton, C.R. Abernathy and W.S. Hobson, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 111 (1991).

159. "Local Mode Spectroscopy and Model Study of Assessing the Role of Light Defects in III-V Compound Semiconductors," D. Talwan, O. Manasreh, D. Fischer, S.J. Pearton and G. Matous, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 533 (1991).

160. "Unintentional Hydrogenation of III-V Semiconductors Device Processing," S.J. Pearton, C.R. Abernathy, W.S. Hobson, J. Lopata, D. Kozuch and M. Stavola, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 617 (1991).

161. "Hydrogen Passivation of Shallow and Deep Centers in GaSb," A. Polyakov, S.J. Pearton, R. Wilson, P. Rai-Choudhury, R. Hillard, X. Bao, M. Staun, A.G. Milnes and T. Schlesinger, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 623 (1991).

162 "Effects of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by MOMBE," C.R. Abernathy, S.J. Pearton and D. Bohling, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 1057 (1991).

163. "Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using TMAAl as a New Al Source," W.S. Hobson, S. McAfee, K. Jones, N. Paroskevopoulous, C.R. Abernathy, S. Sputz, T. Harris, M. Lamont-Schnoes and S.J. Pearton, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 1062 (1991).

164. "Anomalous Damage Depths in Low Energy Ion Beam Processed III-V Semiconductors," S.J. Pearton, F. Ren, T. Fullowan, R. Kopf, W. Hobson, C.R. Abernathy, A. Katz, U. Chakrabarti. and V. Swaminathan, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 1439 (1991).

165. "High Temperature Defect-Free RTA of III-V Substrates in Metalorganic Controlled Ambient," A. Katz, A. Feingold, S.J. Pearton, M. Geva, S. Nakahara and E. Lane, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 1509 (1991).

166. "Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C. Abernathy, R. Kopf, A. Amerson, S. Downey and S.J. Pearton, 16th Intl. Conf. Defects in Semiconductors, Lehigh; Mat. Sci. Forum 83-87, 1557 (1991).

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167. "Effects of Pcl3 Addition on ECR CH4/H2/Ar Plasma Etching of InP and InP and InGaAs," S.J. Pearton, U. Chakrabarti and A. Katz, 3rd Intl. Conf. InP and Related Materials, Cardiff, April 1991; pp. 203-206 (1991).

168. "Passivation of C Acceptors in GaAs by Hydrogen," D. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy, J. Lopata and W.S. Hobson, APS March Meeting, Detroit, March 1991; Bull. Am. Phys. Soc. 36, 994 (1991).

169. "Novel C-Doped, p-Channel GaAs MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, 18th Intl. Symp. GaAs and Related Comp., Seattle, Sept. 1991; IOP Conf. Ser. 121, 137 (1991).

170. "Characteristics of Dry Etch GaAs p-n Junctions Grown by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren, T. Fullowan and J. Lothain, 18th Intl. Symp. GaAs and Related Comp., Seattle, Sept. 1991; IOP Conf. Ser. 121, 191 (1991).

171. "Incorporation of H into III-V Semiconductors During Growth and Processing," S.J. Pearton, C. Abernathy, W. Hobson, F. Ren, T. Fullowan, J. Lopata. and U. Chakrabarti, 18th Intl. Symp. GaAs and Related Comp., Seattle, Sept. 1991; IOP Conf. Ser. 120, 195 (1991).

172. "Dry Etch Processing of GaAs/AlGaAs HEMTs," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, R. Kopf, U. Chakrabarti, Electrochem. Soc., Phoenix, Oct. 1991; Proc. Symp. Patterning Sci. Techn. II 92-6, 204 (1991).

173. "UV-Ozone Removal of Interfacial C from GaAs Prior to MOMBE," S.J. Pearton, F. Ren, C. Abernathy, W. Hobson and H. Luftman, Electrochem. Soc., Phoenix, Oct. 1991, Proc. 2nd. Intl. Symp. on Cleaning Technology in Semiconductor Device Manufacturing 92-12, 477 (1992).

174. "Semiconductor Microdisk Lasers, " R. Slusher, S. McCall, A. Levi, J. Stark, R. Logan and S.J. Pearton, 1991 OSA Meeting, San Jose, Nov. 1991.

175. "Growth of GaAs/AlGaAs HBTs by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T. Fullowan, K. Montgomery, P. Wisk, J. Lothian, P. Smith and R. Nottenburg, Intl. CBE Conf., Oxford, Sept. 1991; J. Cryst. Growth 120, 234 (1992).

176. "Thermal Stability of RT-LPCVD SiO x/InP System," A. Katz, A. Feingold, U. Chakrabarti, and S.J. Pearton, SOTAPOCS XV, Electrochemical Society Meeting, Phoenix, Oct. 1991.

177. "Gap Solutions in Buried Bragg Grating AlGaAs Waveguides," R. Slusher, M. Islam, C. Soudich, W. Hobson, S.J. Pearton, K. Tai, S. Sipe and K. de Sterke, 1991 OSA Meeting, San Jose, Nov. 1991.

178. "AlGaAs/GaAs Based MENTs Inverters and Ring Oscillators with InGaAs and AlGaAs Etch Stop Layers," F. Ren, S.J. Pearton, R. Kopf, S. Chu, and S. Pei, SOTAPOCS XV, Electrochemical Society Meeting, Phoenix, Oct. 1991; Vol. 92-19, 179 (1992).

179. "Comparison of CH4/H2/Ar RIE and ECR Plasma Etching of In-Based III-V Alloys," S.J. Pearton, U. Chakrabarti, A. Katz and W. Hobson, Washington Materials Forum, Washing, March 1991.

180. "Ion Implantation of GaAs and Related Materials," S.J. Pearton, 2nd Intl. Conf. Materials and Process Characterization for VLSI 91, Shanghai, China, Oct. 1991.

181. "III-V Semiconductor Dry Etching Using ECR Discharges," S.J. Pearton, F. Ren, T. Fullowan, J. Lothian, C. Abernathy, A. Katz and R. Kopf, SOTAPOCS XV, Electrochemical Society Meeting, Phoenix, Oct. 1991; Vol. 92-19, 54 (1992).

182. "Hydrogen Passivation of C-Acceptors in GaAs and Grown from Metalorganic Sources,"

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M. Stavola, D. Kozuch, S.J. Pearton, C. Abernathy and W. Hobson, Workshop on Hydrogen Migration in Semiconductors, Hobsen, Germany, Nov. 1991.

183. "Low Damage ECR Plasma Etching of InP-Based Devices," C. Constantine, D. Johnson and S.J. Pearton, 20th Ann. Symp. on Appl. Vac. Sci & Techn., Clearwater Beach, FL, Feb. 1991.

184. "Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine," C. Abernathy, P. Wisk, S.J. Pearton, F. Ren, D. Bohling and G. Muhr, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 57 (1992).

185. "Comparison of Disilane and Tetraethylsin as Gaseous Dopants for Growth of n-GaAs and n-AlGaAs by MOMBE," P. Wisk, C.R. Abernathy, S.J. Pearton, F. Ren, T. Fullowan and J. Lothian, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 63 (1992).

186. "Dry Etch Self-Aligned AlInAs/InGaAs HBTs," T. Fullowan, S.J. Pearton, R. Kopf, F. Ren, Y.K. Chen, P. Smith, M.A. Chin and J. Lothian, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 285 (1992).

187. "ECR Plasma Processing of GaAs/AlGaAs HEMT Structures," "ECR Plasma Processing of GaAs/AlGaAs HEMT Structures," S.J. Pearton, F. Ren, J. Lothain, T. Fullowan, R. Kopf. and U. Chakrabarti, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 293 (1992).

188. "Dry Etch Damage in GaAs p-n Junctions," S.J. Pearton, F. Ren, C. Abernathy, T. Fullowan and J. Lothian, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 301 (1992).

189. "Wet and Dry Etching of InGaP," J. Lothian, J. Kuo, S.J. Pearton. and F. Ren, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240,307 (1992).

190. "Anisotropic RIE of Submicron W Features in CFx or SF6 Plasmas," T. Fullowan, F. Ren, S.J. Pearton, G. Mahoney and R. Kostelak, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 315 (1992).

191. "Formation of Ohmic Contacts to InP by Means of RT LPMOCVD Technique," A. Katz, A. Feingold, S.J. Pearton, S. Nakahara, E. Lane and M. Geva, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 393 (1992).

192. “Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs," F. Ren, A. Emerson, S.J. Pearton, W. Hobson, T. Fullowan and J. Lothian, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 409 (1992).

193. "Improvement of Ohmic Contacts on GaAs with In-Situ Cleaning," F. Ren, S.J. Pearton, T. Fullowan, W. Hobson, S. Chu and A. Emerson, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 417 (1992).

194. "Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of SiO x Thin Films Grown by RT LPCVD," A. Feingold, A. Katz, S.J. Pearton, U. Chakrabarti and K. Jones, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 425 (1992).

195. "Radiation Testing of AlInAs/InGaAs and GaAs/AlGaAs HBTs," S. Witmer, S. Mittleman, D. Lehy, F. Ren, T. Fullowan, R. Kopf, C. Abernathy, S.J. Pearton, D.A., Humphrey, K. Montgomery, P. Smith, J. Kreskovsky and H. Grubin, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 523 (1992).

196. "Hydrogen Incorporation and Carrier Reduction in Hydrogenated n-GaAs:Si and p-GaAs:Zn Crystals," J. Zavada, R. Wilson, H. Jenkinson, S. Nowak. and S.J. Pearton, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 661 (1992).

197. "Ion Implantation Doping of InGaP, InGaAs and AlInAs," S.J. Pearton, J. Kuo, W.

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Hobson, E. Hailermarian, F. Ren, A. Katz and A. Perley, 1991 Fall MRS and Mat. Res. Soc. Symp. Proc. 240, 797 (1992).

198. "Properties of Pt/Ti Contacts to III-V Materials, " A. Katz, S. Nakahara, S. Chu, B. Weir, C. Abernathy, W., Hobson, S.J. Pearton and W. Savin, Mat. Res. Soc. Symp. Proc. 216, 305 (1991).

199. "Low Damage Plasma Processing of III-V Semiconductors," S.J. Pearton, 11th Ann. Symp. Electronic Materials, Processing and Characterization, June 1992, Richardson, TX.

200. "Semiconductor Microdisk Lasers," R. Slusher, S. McCall, J. Stark, A. Levi, R. Logan. and S.J. Pearton, Quantum Electronics and Laser Science Conf., Anaheim, CA, May 1992; Conf. Digest 13, 160 (1992).

201. "Ion Implantation Technology for III-V Heterojunction Devices," F. Ren, S.J. Pearton, C.R. Abernathy, S. Chu, T. Fullowan, et al., 14th Ion Implantation Technology Conf., Gainesville, FL, Sept. 1992, pp. 421-425.

202. "Applications of Ion Implantation in III-V Device Technology," S.J. Pearton, F. Ren., S. Chu, W. Hobson, C. Abernathy, T. Fullowan, J. Lothian, R. Elliman, D. Jacobson and J.M. Poate, 12th Intl. Conf. Applications of Accelerators in Research and Industry, Denton, TX, Nov. 1992, Nucl. Instr. Meth. B 79, 648 (1992).

203. "GaAs(C)/InAs Superlattices Grown by MOMBE," C. Abernathy, P. Wisk, S.J. Pearton, W. Hobson, P. Fuoss, F. Lauclas, S. Chu and F. Ren, Proc. 4th Intl. Conf. InP and Related Materials, April 1992, Rhode Island, pp. 281-285.

204. "Self-Aligned, Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices," S.J. Pearton, A. Katz, A. Feingold, F. Ren, T. Fullowan and J. Lothian, 1992 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc., 260, 23 (1992).

205. "W and Related Alloys Deposited onto InP by RT LPCVD," A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, E. Lane and M. Geva, 1992 Spring MRS Meeting; Mat. Res. Soc. Symp. Proc. 260, 217 (1992).

206. "Effect of Hydrogen Treatment on Electrical Properties of AlGaAsSb," A. Polyakov, M. Stam, A.G. Milnes, R.G. Wilson, A. Bocharev, P. Rai-Choudhury, R. Hilard and S.J. Pearton, 1992 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 262, 425 (1992).

207. "Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures," S.J. Pearton, F. Ren, T. Fullowan, A. Katz, W. Hobson, C. Abernathy, J. Lothian, R. Elliman and J.S. Williams, 1992 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 262, 763 (1991).

208. "Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C.R. Abernathy, R. Kopf, S. Downey and S.J. Pearton, 1992 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 262, 797 (1992).

209. "HI/H2 ECR Plasma Etching of III-V Semiconductors," S.J. Pearton, U. Chakrabarti, A. Katz, F. Ren, T. Fullowan, C.R. Abernathy and W. Hobson, 1992 Spring MRS Meeting and Mat. Res. Soc. Symp. Proc. 268, 17 (1992).

210. "Novel Dry Etch Chemistries for InP and Related Compounds," S.J. Pearton, U. Chakrabarti, A. Katz, W. Hobson, C. Abernathy, F. Ren, and T. Fullowan, 4th Intl. Conf. InP and Related Materials, Rhode Island, April 1992; pp. 420-426.

211. "High Yield, Scaleable Dry Etch Process for In-Based HBTs," T. Fullowan, S.J. Pearton, R. Kopf, F. Ren, and J. Lothian, 4th Intl. Conf. InP and Related Materials, Rhode Island, April 1992; pp. 343-346.

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212. "Symmetry and Reorientation of the Si-H Complex in GaAs," D. Kozuch, M. Stavola, S.J. Pearton and J. Lopata, 1992 APS March Meeting, Indianapolis; Bull. Am. Phys. Soc. 37, 195 (1992).

213. "Hydrogen Passivation of C Acceptors in GaAs," M. Stavola, D. Kozuch, S.J. Pearton, C.R. Abernathy and W.S. Hobson, 1992 APS March Meeting, Indianapolis; Bull. Am. Phys. Soc. 37, 195 (1992).

214. "Electrically Pumped, Room Temperature, Microdisk Semiconductor Lasers with Sub-Milliamp Threshold Currents," A. Levi, R. Slusher, S. McCall, T. Tanbun-ek, D. Colentz. and S.J. Pearton, 1992 Device Research Conf., Boston, July 1992; IEEE Trans. ED 39, 2651 (1992).

215. "Damage Introduction in GaASs/AlGaAs in InGaAs/InP HBT Structures During ECR Plasma Processing," F. Ren, T. Fullowan, S.J. Pearton, J. Lothian, R. Esagui, C.R. Abernathy and W.S. Hobson, 1992 AVS Meeting, Chicago, Nov. 1992; J. Vac. Sci. Technol. A 11, 1768 (1993).

216. "Selective Regrowth of III-V Epitaxial Layers by Low Pressure OMVPE Using CCl4," W.S. Hobson and S.J. Pearton, 1992 AVS Meeting, Chicago, Nov. 1992; J. Vac. Sci. Technol. A 11, 1006 (1993).

217. "Wet and Dry Etching Characteristics of AIN, GaN and InN," S.J. Pearton, C.R. Abernathy, F. Ren, A. Katz and P. Wisk, 1992 AVS Meeting, Chicago, Nov. 1992; J. Vac. Sci. Technol. A 11, 1772 (1993).

218. "Symmetry and Reorientation of the Si-H Complex in GaAs," D. Kozuch, M. Stavola, S.J. Pearton and J. Lopata, 1992 Gordon Research Conf. on Point Defects, Line Defects, and Interfaces in Semiconductors," New Hampshire, August 1992.

219. "Strongly Polarized C-H Vibrations in GaAs:C Epilayers Grown by MOMBE," M. Cheng, M. Stavola, D. Kozuch, S. Uttring, C.R. Abernathy and S.J. Pearton, 1992 Gordon Research Conf. on Point Defects, Line Defects, and Interfaces in Semiconductors," New Hampshire, August 1992.

220. "W-Based RTLPCVD Ohmic Contacts to InP Formed by and Integrated Process," A. Katz., A. Feingold, S.J. Pearton, E. Lane, N. Moriya and M. Geva, Electrochemical Society Meeting, Toronto, July 1, 1992 (SOTAPOCS XVII).

221. "Electrical Properties of MBE Grown Layers of AlGaAsSb and the Effects of Proton Implantation and Hydrogen Plasma Treatment," A. Polyakov, S. Eglash, A. Milnes, M. Ye, S.J. Pearton and R.G. Wilson, Intl. MBE Conf., Stuttgart, Germany, August 1992, J. Cryst. Growth 127, 728 (1993).

222. "Compound Semiconductor Circuits and Devices for Future Lightwave Telecommunications Systems," R. Montgomery, C.R. Abernathy, A. Cho, R. Esagui, A. Feygenson, T. Fullowan, R. Hamm, M. Haner, D. Humphrey, B. Jalali, J. Lothian, S.J. Pearton, F. Ren, D. Sivco, P. Smith and R. Yadvish, Telefonica Conf., Barcelona, Spain, Nov. 1992.

223. "Output Couplers for Whispering Gallering Mode Microdisk Lasers," R.E. Slusher, A. Levi, S. McCall, J. Glass, S.J. Pearton and R. Logan, Integrated Photonics Research Comp., Palm Springs, CA, March 23, 1993.

224. "Small Diameter Dry-Etched Via Holes in GaAs," S.J. Pearton, F. Ren, A. Katz, B. Tseng, J. Lothian and T. Fullowan, 1993 Spring MRS Meeting, San Francisco, April 1993 and Mat. Res. Soc. Symp. Proc. 300, 173 (1993).

225. "Formation of Long Wavelength InP Laser Mesas," F. Ren, S.J. Pearton, B. Tseng, J.

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Lothian, 1993 Spring MRS Meeting, San Francisco, April 1993 and Mat. Res. Soc. Symp. Proc. 300, 181 (1993).

226. "Fully Planar Ion-Implanted 0.98 µm strained Quantum Well Laser, " W.S. Hobson, S.J. Pearton, F. Ren, S. Chu, R. Bylsma and R. Elliman, 1993 Spring MRS Meeting, San Francisco, April 1993 and Mat. Res. Soc. Symp. Proc. 300, 188 (1993).

227. "Reliability of Implant-Isolation Regions in High-Doped GaAs-Based Structures," F. Ren, S.J. Pearton, J. Lothian, T. Fullowan, C.R. Abernathy and S. Chu, Mat. Res. Soc. Symp. Proc. 300, 273 (1993).

228. "High Efficiency Common Emitter InGaP/GaAs Power HBTs," F. Ren, S.J. Pearton, C.R. Abernathy, J. Lothian, P. Wisk, T. Fullowan, Y. Chen, L. Henning, T. Henry, L. Yang, S. Fu, R. Brozovich and J.J. Lin, GaAs Man. Tech. Conf., Atlanta, May 1993.

229. "Deposition of TiN by ECR-MOMBE," P. Wisk, C. Abernathy, S.J. Pearton, F. Ren, A. Katz and D. Bohling, 1993 Spring MRS Meeting, San Francisco, April 1993 and Mat. Res. Soc. Symp. Proc. 300, 288 (1993).

230. "Single Wafer Integrated Process by RTLPMOCVD Modules-Application in the Manufacturing of InP-Based Laser Devices," A. Katz and S.J. Pearton, European MRS Conf., Strasbourg, France, May 1993.

231. "Dry Etch Integrated Processing of Micro- and Opto-Electronics," S.J. Pearton and A. Katz, European MRS Conf., Strasbourg, France, May 1993.

232. "Low Energy Ion-Enhanced Etching of III-V's for Nanodevice Applications," S.J. Pearton, 40th National AVS Symp., Orlando, FL, October 1993.

233. "Effect of Substrate Temperature on Dry Etching of InP., GaAs and AlGaAs in I2 and Br2 Plasmas," U. Chakrabarti, F. Ren, S.J. Pearton and C.R. Abernathy, 40th National AVS Symp., Orlando, FL, October 1993.

234. "Single Electron Capacitance Spectroscopy of Semiconductor Microstructures," R. Ashoori, H. Stormer, J. Weiner, L. Pfeiffer, S.J. Pearton, K. Baldwin and K. West, Yamada Conf. XXXIII on Application of High Magnetic Fields in Semiconductor Physics, Chiba, Japan, August 1992; Physica B 184, 378 (1993).

235. "Single Electron Capacitance Spectroscopy of a Few Electron Box," R. Ashoori, J. Stormer, J. Weiner, L. Pfeiffer, S.J. Pearton, K. Baldwin and A.K. West, Proc. Conf. Physics of Few Electron Nanostructures, The Netherlands, Oct. 1992, Physica B 189. 117 (1993).

236. "Growth of GaN AlN and InN by ECR-MOMBE," P. Wisk, C.R. Abernathy, S.J. Pearton, F. Ren, J. Lothian, A. Katz A. and K. Jones, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 599 (1993).

237. "InGaP/GaAs Based Single and Double HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, P. Wisk and R. Esagui, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 33 (1993).

238. "Iodine-Based Dry Etching Chemistries for InP and Related Compounds," S.J. Pearton, U. Chakrabarti, A. Katz, C.R. Abernathy, W. Hobson, F. Ren and T. Fullowan, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 123 (1993).

239. "Dry Surface Cleaning of Plasma-Etched HEMTs," S.J. Pearton, F. Ren, A. Katz, U. Chakrabarti, E. Lane, W. Hobson, R. Kopf, C.R. Abernathy, C.S. Wu, D.A. Bohling and J. Ivanokovits, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 131 (1993).

240. "Another Step in Developing a Single Wafer Integrated Process-RTMOOCVD of Locally

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Diffused W(Zn) Contacts," A. Katz, A. Feingold, N. Moriya, S.J. Pearton, A. Rusby, J. Kovalchick, C.R. Abernathy, M. Geva and E. Lane, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 217 (1993).

241. "Highly Reliable WGe Ohmic Contact to GaAs/AlGaAs HBTs," T. Fullowan, F. Ren, B. Tseng, S.J. Pearton, C.R. Abernathy, L. Harriott and E. Lane, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 239 (1993).

242. "Trilayer Liftoff Metallization Process Using Low Temperature SiN x," J. Lothian, F. Ren, S.J. Pearton, U. Chakrabarti, C.R. Abernathy and A. Katz, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 259 (1993).

243. "Reduction of Sidewall Roughness During Dry Etching of SiO 2," F. Ren, S.J. Pearton, J. Lothian, C.R. Abernathy and W.S. Hobson, 1992 Fall MRS Meeting, Boston, Dec. 1992 and Mat. Res. Soc. Symp. Proc. 282, 529 (1993).

244. "Low Temperature SiN x as a Sacrificial Layer in Novel Device Fabrication," J. Lothian, F. Ren, S.J. Pearton, C.R. Abernathy and W.S. Hobson, 1993 Spring MRS Meeting, San Francisco, April 1993 and Mat. Res. Soc. Symp. Proc., 300, 327 (1993).

245. "H NMR in GaAs(Zn):H," S.E. Fuller, W. Warren and S.J. Pearton, 1993 APS March Meeting, Seattle; Bull. Am. Phys. Soc. 38, 376 (1993).

246. "Strongly Polarized C-H Vibrations in GaAs:C Epilayers Grown by MOMBE," Y. Cheng, M. Stavola, D. Kozuch, S. Uffring, C.R. Abernathy and S.J. Pearton, 1993 APS March Meeting, Seattle; Bull. Am. Phys. Soc. 38, 377 (1993).

247. "Single-Electron Capacitance Spectroscopy of Discrete Quantum Wells," R. Ashoori, J. Stormer, J. Weiner, L.N. Pfeiffer, D. Baldwin, K. West and S.J. Pearton, 39th Nat. AVS Symp., Chicago, Nov. 1992, pp. 162.

248. "Dry Etching and Ion Implantation of Compound Semiconductors," S.J. Pearton, XII Congress of the Mexican Society of Surface Science and Vacuum, Cancun, Sept. 1993.

249. "High Microwave Power Performance of Self-Aligned InGaP/GaAs HBTs," L. Yang, S. Fu, B. Clark, R. Brozovich, H. Lin, S. Lui, P.C. Chao, F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, P. Wisk, T.R. Fullowan, T. Chui and S.S. Pei,14th Biennial Conf. Ad. Concepts in High Speed Semiconductor Devices & Circuits, Cornell, Aug. 1993.

250. "Fabrication of Y-Gate, Submicron Gate Length GaAs MESFETs," F. Ren, S.J. Pearton, J. Lothian and C.R. Abernathy, 37th Intl. Symp. on Electron, Ion and Photon Beams, San Diego, June 1993; J. Vac. Sci. Technol. B.

251. “Ion Beam Processing of InGaAsP,” S.J. Pearton, C.R. Abernathy, P. Wisk and F. Ren, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 316, 319 (1994).

252. “Optical Emission End Point Detection for Via Hole Etching in InP and GaAs Power Device Structures,” S.J. Pearton, F. Ren, C.R. Abernathy and C. Constantine, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 324, 178 (1994).

253. “Reliable Impurity Identification in InP, M. Schoes, T. Harris, S.J. Pearton, M. DiGuiseppe, R. Bhat and H. Cox, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 325, 461 (1994).

254. “Effects of Ion Irradiation and Hydrogenation on the Doping of InGaAlN Alloys,” S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 325, 258 (1994).

255. “Oriented C Pair Defects Stabilized by H in As-grown GaAs,” Y. Chen, M. Stavola, C.R. Abernathy and S.J. Pearton, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 325, 317 (1994).

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256. “New Dry Etch Chemistries for III-V Semiconductors,” S.J. Pearton, U. Chakrabarti, F. Ren, C.R. Abernathy, A. Katz, W.S. Hobson and C. Constantine, 1993 Fall MRS Symp. Boston, MA; Proc. MRS 334, 260 (1994).

257. “Effect of Substrate Temperature on Dry Etching of InP, GaAs and AlGaAs in I2 or Br Plasmas,” U.K. Chakrabarti, S.J. Pearton and F. Ren, 40th National AVS Symp. Orlando, FL, Nov. (1993).

258. “Structural Characterization of GaN Grown by ECR-MOMBE,” C.R. Abernathy, S. Bharatan, K.S. Jones, S.J. Pearton and P. Wisk, 40th National AVS Symp. Orlando, FL, Nov. (1993).

259. “A Comparison of Intrinsic and Extrinsic C-doping Sources for Doping of III-V Compounds During Growth by MOMBE,” C.R. Abernathy, W.S. Hobson, S.J. Pearton and P. Wisk, 40th National AVS Symp. Orlando, FL, Nov. (1993).

260. “Low-Energy, Ion-Enhanced Etching of III-V’s for Nanodevice Applications,” S.J. Pearton, 40th National AVS Symp. Orlando, FL, Nov. (1993).

261. “High Resolution Etching of III-V’s Using Magnetically-enhanced Discharges,” S.J. Pearton, 188th Meeting of the Electrochemical Society, San Francisco, MA, May (1994).

262. “Comparison of Multipolar Resonant Cavity and Magnetic Mirror Microwave ECR Sources for Plasma Etching of III-V Semiconductors,” S.J. Pearton, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 347, 441 (1994).

263. “Dry Etching and Implantation Characteristics of III-N Alloys,” S.J. Pearton, 1994 Fall Electrochemical Society Meeting, Miami Beach, FL, Oct. 1994.

264. “ECR High Ion Density Plasma Sources for Etching and Deposition in III-V Semiconductor Device Technology,” S.J. Pearton, Proc. 37th Ann. Symp. Of Soc. Vac. Coaters, Boston, MA, May 1994, pp. 75-81.

265. “Non-alloyed Ohmic Contracts on n-type InP with Nitridation of Patterned InP Surface,” F. Ren, S.J. Pearton, J.R. Lothian, W. Chu, C.R. Abernathy, S.N.G. Chu and S.S. Pei, 185th Meeting of the Electrochemical Society, San Francisco, CA, May 1994.

266. “High Density, Magnetically-Confined Dry Etching of Metallization, Dielectrics and Semiconductors in III-V Device Technology,” S.J. Pearton, A. Katz, F. Ren, T.R. Fullowan, J.R. Lothian, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 337, 749 (1994).

267. “Ion Milling and Reactive Ion Etching of III-V Nitrides,” S.J. Pearton, C.R. Abernathy, F. Ren and J.R. Lothian, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 339, 179 (1994).

268. “Redistribution of Implanted H+ in GaN, AlN and InN,” J.M. Zavada, R.G. Wilson, S.J. Pearton, R.E. Slusher and F. Ren, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 339, 553 (994).

269. “Sulfide Passivated GaAs/AlGaAs Microdisk Lasers,” W.S. Hobson, U. Mohideen, S.J. Pearton, R.E. Slusher and F. Ren, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 340, 201 (1994).

270. “Fermi Level Pinning in Au Schottky Barriers in InGaP and InGaAlP,” V. Gorbylev, A. Polyaklov, S.J. Pearton and N. Smirnov, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc. Symp. Proc. 340, 265 (1994).

271. “”Doping Efficiency and Deep Traps in MOCVD Grown InGaAlP as Influenced by Stiochiometry and Hydrogen Passivation,” V. Gorbylev, A. Polyakov, S.J. Pearton and N. Smirnov, 1994 Spring MRS Meeting, San Francisco, CA, April 1994; Mat. Res. Soc.

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Symp. Proc. 340, 301 (1994). 272. “B NMR in Heavily Doped Si(B),” S.E. Fuller, W.W. Warrena and S.J. Pearton, 1994

March Meeting of Am. Phys. Soc., Pittsburgh, PA; Bull. Am. Phys. Soc. 39, 89 (1994). 273. “Effects of Wet and Dry Etching and Sulfide Passivation on Surface Recombination

Velocities of InGaP p-n Junctions,” S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy and U.K. Chakrabarti, Proc. 6th Int. Conf. InP and Rel. Mat., pp. 186-189 (1994).

274. “Selective Area Processing of InGaAsP,” S.J. Pearton, C.R. Abernathy and F. Ren, Proc. 6th Int. Conf. InP and Rel. Mat., pp. 194-197 (1994).

275. “SiN Passivation for InP-based Materials,” F. Ren, N. Buckley, A. Cho, B. Hamm, K. Lee, C. Constantine and S.J. Pearton, 1994 Fall ECS Meeting, Miami Beach, FL, Oct. 1994.

276. “GaN Microstructures Formed by High Resolution CH4/H2 Dry Etching,” S.J. Pearton, F. Ren, C.R. Abernathy and J.R. Lothian, 1994 Fall ECS Meeting, Miami Beach, FL, Oct. 1994.

277. “Diffusion of Implanted Dopants and Isolation Species in III-V Nitrides,” S.J. Pearton, C.R. Abernathy, F. Ren and W.S. Hobson, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

278. “Process Chemistries for Low Temperature ECR Plasma Etching of III-V Semiconductors,” S.J. Pearton, C.R. Abernathy, F. Ren and W.S. Hobson, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

279. “Outdiffusion of Deuterium From GaN, AlN and InN,” R..G. Wilson, S.J. Pearton, C.R. Abernathy and J.M. Zavada, 41st Nat. Symp. Of the AVS, Denver, CO, Oct. 1994.

280. “High Density, Low Temperature Dry Etching in GaAs and InP Device Technology,” S.J. Pearton, C.R. Abernathy and F. Ren, 41st Nat. Symp. Of the AVS, Denver, CO, Oct. 1994.

281. “SiN X Encapsulation of Sulfide Passivated GaAs/AlGaAs Microdisk Lasers,” W.S. Hobson, F. Ren, U. Mohideen, R. Slusher, M. Lamont and S.J. Pearton, 41st Nat. Symp. Of the AVS, Denver, CO, Oct. 1994.

282. “Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry Etching,” F. Ren, S.J. Pearton, C.R. Abernathy and J. Lothian, 41st Nat. Symp. Of the AVS, Denver, CO, Oct. 1994.

283. “Thermal Stability of Implanted Dopants and Passivation Species in III-V Nitrides,” R.G. Wilson, S.J. Pearton, C.R. Abernathy and J. M. Zavada, Proc. 2nd Int. High Temp. Electronics Conf., Charlotte, NC, June 1994.

284. "Hydrogen Diffusion and Passivation in InGaAlN Alloys," S.J. Pearton, C.R. Abernathy, J. D. MacKenzie, C.B. Vartuli, R.G. Wilson, J.M. Zavada and R.J. Shul, 1995 Spring MRS Meeting, San Francisco, CA, April 1995; Proc. Mat. Res. Soc. Symp. 378, 497 (1995).

285. "High Resistivity InAlN by N or O Implantation," J.C. Zolper, S.J. Pearton, C.R. Abernathy and C.B. Vartuli, 1995 Spring MRS Meeting, San Francisco, CA, April 1995; Proc. Mat. Res. Soc. Symp. 378, 485 (1995).

286. "High Rate Dry Etching of GaN, AlN and InP in ECR Cl2/CH4/H2/Ar Plasmas," C.B. Vartuli, S.J. Pearton, C.R. Abernathy, R.J. Shul and A.J. Howard, 1995 Spring MRS Meeting, San Francisco, CA, April 1995; Proc. Mat. Res. Soc. Symp. 380, 208 (1995).

287. "Doping of Group III-Nitrides Grown by MOMBE," J.D. MacKenzie, C.R. Abernathy and S.J. Pearton, 1995 Spring MRS Meeting, San Francisco, California, April 1995.

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288. "Development of Wet Chemical Etch Solutions for III-V Nitrides," J.R. Mileham, C.R. Abernathy and S.J. Pearton, 1995 Spring MRS Meeting, San Francisco, CA, April 1995.

289. "Investigation of Wet Chemical Etching of InGaAlP Alloys," J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, J.R. Coblian and C.S. Wu, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 316 (1995).

290. "High Quality p-type GaN and InGaN Epitaxial Growth on c-sapphire Substrates in a Production Scale Multi-wafer MOCVD Reactor," C. Yuan, J.G. Thompson, W. Kroll, R.A. Stall, Y. Li and S.J. Pearton, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 10 (1995).

291. "Status of Ion Implantation Doping and Isolation of III-V Nitrides," J.S. Zolper, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, C. Yuan and R.A. Stall, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 144 (1995).

292. "A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN," M.W. Cole, W. Han, F. Ren, C. Yuan, S.J. Pearton, Y. Li and Y. Lu, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 187 (1995).

293. "Magnetron RIE of III-V Nitride Semiconductors," G.F. McLane, S.J. Pearton and C.R. Abernathy, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 204 (1995).

294. "ECR Etching of Group III-V Nitride Binary and Ternary Films," R.J. Shul, A.J. Howard, S.J. Pearton, C.R. Abernathy, C.B. Vartuli and P.A. Barnes, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 217 (1995).

295. "Damage Investigation of GaAs and InGaP Dry Etched with an ECR Source," M. Cole, W. Han, S. Pang, F. Ren, W. Hobson, J.A. Caballero and S.J. Pearton, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 293 (1995).

296. "Extremely High Etching Rate of In-based III-V Semiconductors in BCl3/N2 Plasmas," F. Ren, S.J. Pearton, J.R. Lothian, M. Cole and J.A. Caballero, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Gap Semicond. Symp. 95-21, 346 (1995).

297. "High Density Plasma Etching of III-V Nitrides," C. Vartuli, S.J. Pearton, C.R. Abernathy, R.J. Shul, A.J. Howard and J. Parmeter, 42nd AVS National Symp., Minneapolis, MN, October, 1995.

298. “Unintentional Hydrogenation of GaN and Related Alloys During Processing," S.J. Pearton, C.B. Vartuli, C.R. Abernathy, J.D. MacKenzie, R.G. Wilson, F. Ren, R.J. Shul and J. M. Zavada, 42nd AVS National Symp., Minneapolis, MN, October, 1995.

299. "Patterning of GaN, AlN and InN in KOH-based Solutions," J.R. Mileham, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.J. Shul and S.P. Kilcogne, 42nd AVS National Symp., Minneapolis, MN, October, 1995.

300. "Magnetron RIE of InGaN and InAlN Alloy Semiconductors," G.F. McLane, T. Monahan, C.R. Abernathy and S.J. Pearton, 42nd AVS National Symp., Minneapolis, MN, October, 1995.

301. "The Effect of H on the Stability of AlGaAs/GaAs HBTs," F. Ren, C.R. Abernathy, S.J. Pearton, J. Coblian, P. Wisk and T. Fullowan, 1994 US Conf. on Man. Techn., Las Vegas, NV, May 1994.

302. "Novel Properties of H-containing Complexes Revealed by their Hydrogen Vibrations,"

22

M. Stavola, Y. Cheng, C.R. Abernathy and S.J. Pearton, 18th Intl. Conf. on Defects in Semicond., Sendai, Japan, July 1995.

303. "P-type GaN Growth by MOCVD," C. Yuan, C. Chern, R. Stall, R.M. Kolbas and S.J. Pearton, 1995 EMC Conf., Charlottesville, VA, June 1995.

304. "Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching," S.J. Pearton, C.R. Abernathy, J.R. Mileham, R.J. Shul, S. Kilcoyne, F. Ren and J.M. Zavada, 1995 Fall MRS Meeting, Boston, MA, November 1995.

305. "Thermal Stability of Ohmic Contacts to n-InGaN," A. Durbha, S.J. Pearton, C.R. Abernathy, J.W. Lee, P. Holloway and F. Ren, 1995 Fall MRS Meeting, Boston, MA, November 1995.

306. "AFM Analysis of ECR Dry Etched InGaP, AlInP and AlGaP," F. Ren, W. Hobson, J. Caballero, J.W. Lee, S.J. Pearton and M. Cole, 1995 Fall MRS Meeting, Boston, MA, November 1995.

307. "Role of C, O and H in III-V Nitrides," C.R. Abernathy, S.J. Pearton, J.W. Lee, C. Vartuli, R.G. Wilson, R.J. Shul, J.C. Zolper and J.M. Zavada, 1995 Fall MRS Meeting, Boston, MA, November 1995.

308. "Ion Damage and Annealing of Epitaxial GaN and Comparison with GaAs/AlGaAs Materials," H. Fan, J.S. Williams and S.J. Pearton , 1995 Fall MRS Meeting, Boston, MA, November 1995.

309. "Ion Implantation Doping and High Temperature Annealing of GaN," J.C. Zolper, A.J. Howard, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, R. Stall and R.G. Wilson, 1995 Fall MRS Meeting, Boston, MA, November 1995.

310. "Plasma Chemistry Dependent ECR Etching of GaN," R.J. Shul, C. Ashby, A.J. Howard, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, P. Barnes and P. Davis, 1995 Fall MRS Meeting, Boston, MA, November 1995.

311. "Production of p-type GaN in a Multiwafer Reactor," C. Yuan, R. Walker, R. Kolbas and S.J. Pearton, 22nd Intl. Conf. Comp. Semicond. Seoul, Korea, September 1995.

312. "Microdisc Laser Structures Formed in III-V Nitride Epilayers," J.M. Zavada, S.J. Pearton, C.R. Abernathy, R.J. Shul, R.G. Wilson and D. Zhang, Topical Workshop on III-V Nitrides, Nagoya, Japan, September 1995.

313. "Doping and Isolation of GaN, InGaN and InAlN using Ion Implantation," S.J. Pearton, C. Vartuli, C.R. Abernathy, J.D. MacKenzie, J.C. Zolper and R. Stall, Intl. Conf. on SiC and Related Materials, Kyoto, Japan, September 1995; IOP Conf. Ser. 142, 1023 (1996).

314. "The Growth of p-type GaN on Sapphire Substrates by MOCVD," C. Yuan, W. Kroll, R. Stall, Y. Li, R. Kolbas and S.J. Pearton, Intl. Conf. on SiC and Related Materials, Kyoto, Japan, September 1995; IOP Conf. Ser. 142, 855 (1996).

315. “Hydrogen Incorporation into III-V Nitrides During Processing,” S.J. Pearton, 188th ECS Meeting, Chicago, IL, October 1995; Proc. Wide Bandgap Semicond. & Dev. Symp. 95-21, 178 (1995).

316. “Carbon Implantation in AlGaAs,” S.J. Pearton and C.R. Abernathy, 1995 Fall MRS Meeting, Boston, MA, November 1995.

317. “Dry Etching of III-V Nitrides,” S.J. Pearton, 1995 Fall MRS Meeting, Boston, MA, November 1995.

318. “Reactive Ion Etching of II-V Nitrides,” S.J. Pearton, Topical Workshop on III-V Nitrides, Nagoya, Japan, September 1995.

319. “Novel Compound Semiconductor Devices Based on III-V Nitrides,” S.J. Pearton, C.R.

23

Abernathy and F. Ren, 1995 Semicond. Dev. Research Conf., Charlottesville, VA, December 1995.

320. “III-V Nitride Processing and Devices,” S.J. Pearton, C.R. Abernathy and F. Ren, 1995 IEEE Int. Caracas Cong. On Devices, Circuits and Systems, Caracas, December, 1995.

321. “Random Scattering Optical Couplers for Quantum Well IR Detectors,” B.F. Levine, C. Sarusi, S.J. Pearton and R. Leibenguth, NATA AIES Conf. Ser., Rome, Sept. (1993).

322. “Growth and Dipping of AlAs by MOMBE,” C.R. Abernathy, S.J. Pearton, P. Wisk and F. Ren, 1994 Spring MRS Meeting, San Francisco, CA; Proc. MRS 339, 208 (1994).

323. “The Role of H in Current-induced Degradation of GaAs/AlGaAs HBTs,” 1994 Spring MRS Meeting, San Francisco, CA; Proc. MRS 331, 17 (1994).

324. “Thermal Stability of TiPtAn Ohmic Contacts on InN,” F. Ren, C.R. Abernathy, S.J. Pearton and P. Wisk, 1994 Spring MRS Meeting, San Francisco, CA; Proc. MRS 331, 208 (1994).

325. “Light Generation and Waveguiding in Er-doped GaN Epilayers,” J.M. Zavada, D. Zhang, C.R. Abernathy, S.J. Pearton, R.G. Wilson and R.N. Schwartz, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

326. “MOMBE Growth of GaP-based Materials on Si-Surface Preparation and Nucleation,” C.J. Santana, C.R. Abernathy, K.S. Jones and S.J. Pearton, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

327. “Process Chemistries for Low Temperature ECR Etching of III-V Semiconductors,” S.J. Pearton, C.R. Abernathy, F. Ren and W.S. Hobson, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

328. “Diffusion of Implanted Dopants and Isolation Species in III-V Nitrides,” S.J. Pearton, C.R. Abernathy, R.G. Wilson and J.M. Zavada, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

329. “AlN Grown by MOMBE using ECR N2 Plasma,” J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, S. Bharatan, K.S. Jones and R.G. Wilson, 1994 Fall MRS Meeting, Boston, MA, Nov. 1994.

330. “Characterization of Degradation Mechanisms in GaAs/AlGaAs HBTs,” M. Frei, C.. Abernathy, T. Chui, T. Fullowan, J. Lothian, R. Montgomery, S.J. Pearton, F. Ren, P. Smith, J. Weiner and P. Wisk, 1994 DRC Conf., Santa Barbara, CA, July 1994.

331. “The Role of H Incorporated into III-V Semiconductors During Growth and Processing,” S.J. Pearton, 189th ECS Meeting, Reno, NV, May 1995.

332. “Effects of H in III-N and III-V Materials,” S.J. Pearton, 31st Ann. Symp. Of New Mexico Chapter of AVS, Albuquerque, NM, April 1995.

333. “ECR Etching of III-V Semiconductors for Electronic and Photonic Devices,” R.J. Shul and S.J. Pearton, 23rd Ann. Symp. Appl. Vac. Sci. Technol., Clearwater Beach, FL, February 1995.

334. “Minimization of Process- induced Fundamental Mode Attenuation in GaAs/AlGaAs Rib Waveguides Using ECR Plasmas,” G.B. McClellan, R.J. Shul, J.R. Mileham, S.J. Pearton and C. Constantine, 31st Ann. Symp. Of New Mexico Chapter of AVS, Albuquerque, NM, April 1995.

335. “Ion Implantation Isolation of In-containing III-V Nitrides,” J.C. Zolper, S.J. Pearton, C.R. Abernathy and C.B. Vartuli, 31st Ann. Symp. Of New Mexico Chapter of AVS, Albuquerque, NM, April 1995.

336. “Dry Etching and Ion Implantation for III-V Electronic and Photonic Devices,” S.J.

24

Pearton, 2nd Optoelectronic Semicond. Conf. OESC95, Hamilton, Canada, May 1995. 337. “1.54µm PL from Er- implanted AlN and GaN,” R.G. Wilson, R. N. Schwartz, C.R.

Abernathy, S.J. Pearton, N. Newman and J.M. Zavada, Proc. NATO Ad. Workshop on Wide Bandgap Electron. Matl., Minsk, Belarus, May 1994.

338. “High Rate ECR Etching of III-V Nitride Materials,” R.J. Shul, A.J. Howard, S.J. Pearton, C.R. Abernathy, C. Vartuli, P. Barnes and M. Bozack, 188th ECS Meeting, Reno, NV, May 1995.

339. “Growth- induced alignment and assignment of the Vibrational Modes of C in AlGaAs,” J. Zheng, M. Stavola, C.R. Abernathy and S.J. Pearton, March Meeting of APS, St. Louis, MO: Bull. Am. Phys. Soc. 41, 340 (1996).

340. “High Microwave Power ECR Etching of III-V Semiconductor in CH4/H2/Ar,” J.W. Lee, S.J. Pearton, E. Lambers, J. Mileham, C.R. Abernathy, W.S. Hobson, F. Ren and R.J. Shul, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 203 (1996).

341. “Effects of H on Ca and Mg Acceptors in GaN,” J.W. Lee, S.J. Pearton, J.C. Zolper and R. Stall, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 100 (1996).

342. “Ohmic Contacts on Binary and Ternary III-Nitrides,” F. Ren, S.J. Pearton, C.R. Abernathy and M.W. Cole, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 122 (1996).

343. “ECR, ICP and RIE Plasma Etching of GaN,” R.J. Shul, S.J. Pearton, C.R. Abernathy, C. Constantine, C. Bauaff, R. Karlicek and C. Tran, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 159 (1996).

344. “III-Nitride Ion Implantation and Device Processing,” J.C. Zolper, R.J. Shul, A.G. Baca, S.J. Pearton, C.R. Abernathy, R.G. Wilson, R.A. Stall and M.S. Shur, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 149 (1996).

345. “Ion Implantation Processing of GaN Epitaxial Layers,” H. Tan, J.S. Williams, J. Zou, D.J. Cockayne, S.J. Pearton and C. Yuan, ECS Meeting, Los Angeles, CA, May 1996; ECS Proc. Vol. 96-11, 142 (1996).

346. “RTP of III-V Semiconductors,” S.J. Pearton, J.W. Lee and C.B. Vartuli, TMS Meeting, Anaheim, CA, February 1996.

347. “Nanostructures in Semiconductors,” S.J. Pearton, APS Ohio Chapter, Columbus, OH, April 1996.

348. “Er-doping of GaN and Related Alloys,” S.J. Pearton, C.R. Abernathy and J.M. Zavada, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

349. “Damage Introduction in InGaP by ECR Plasmas,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

350. “ECR Etching of GaP, GaAs, InP and InGaAs in Cl2/Ar, Cl2/N2, Bcl3/N2,” R.J. Shul, A.G. Baca, D.J. Rieger, S.J. Pearton, P.A. Barnes and R. Ren, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

351. “ECR Etching of SiC in NF3/O2 and SF6/O2 Plasmas,” F. Ren, J. Grown, S.J. Pearton, M. Cole and F. Flemish, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

352. “W4WSix and Ti/Al Low Resistance Ohmic Contacts to InAlN and InN,” C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R. Shul and J.C. Zolper, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

353. “Transport Properties of GaN, InGaN and InN,” W. Geerts, J. MacKenzie, S.J. Pearton, C.R. Abernathy and T. Schmeidel, 1996 Spring MRS Meeting, San Francisco, CA, April

25

1996. 354. “Cl2-based ECR Etching of InGaP, AlInP and AlGaP,” J. Hong, J. Lee, S.J. Pearton, C.

Santana, C.R. Abernathy and R. Ren, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

355. “Plasma Chemistries for Dry Etching GaN, InGaN and InAlN,” S.J. Pearton, R.J. Shul and F. Ren, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

356. “Dry Etching of InGaP and AlInP in CH2/H2/Ar,” J.W. Lee, S.J. Pearton, C.J. Santana, E. Lambers, C.R. Abernathy, W. Hobson and F. Ren, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

357. “Passivation of Carbon Doping in InGaAs During ECR-CVD of SiN x,” F. Ren, R. Hamm, R.G. Wilson, S.J. Pearton and J. Lothian, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

358. “Properties of H, O and C in GaN,” S.J. Pearton, C.R. Abernathy, J.W. Lee, C.B. Vartuli, J. MacKenzie, F. Ren, J. Zavada and R.J. Shul, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

359. “Characterization of Er-doped Nitrides Prepared by MOMBE,” J.M. Zavada, R.G. Wilson, R.N. Schwartz, C.R. Abernathy and S.J. Pearton, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

360. “High Temperature Surface Degradation of InAlN and InGaN,” C.B. Vartuli, SA.J. Pearton, C.R. Abernathy, J.C. Zolper and A.J. Howard, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

361. “Dry Etch Damage in InN, InGaN and InAlN,” S.J. Pearton, J.W. Lee, J. MacKenzie, C.R. Abernathy and R.J. Shul, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

362. “P- and n-type Doping of GaN with Implanted Ca and O,” J.C. Zolper, R.G. Wilson, S.J. Pearton and R. Stall, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

363. “Plasma-induced Damage of GaN,” R.J. Shul, J.C. Zolper, M.H. Crawford, S.J. Pearton, J. Lee, R. Karlicek. C. Constantine and C. Barrett, ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 232 (1996).

364. “ICP Etching of GaAs via Hole Contacts,” R.J. Shul, A.G. Baca, S.J. Pearton and C. Constantine, ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 84 (1996).

365. ”The Role of AlN Encapsulation of GaN During Implant Activation Annealing,” J.C. Zolper, S.J. Pearton, D.J. Rieger, A.G. Baca, J.W. Lee, C. Vartuli and R. Stall, ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 244 (1996).

366. “Comparison of ICl and IBr Plasma Etching of InGaAlP Alloys,” J. Hong, J. Lee, E. Lambers, C.R. Abernathy, S.J. Pearton, C. Constantine and W.S. Hobson, ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 56 (1996).

367. “Critical Issues of III-V Semiconductor Processing,” S.J. Pearton, 190th Meeting of ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 132 (1996).

368. “Etching Processes for Fabrication of GaN/InGaN/AlN Microdisk Laser Structures,” J.W. Lee, C.B. Vartuli, J.D. MacKenzie, J.R. Mileham, C.R. Abernathy, S.J. Pearton, R.J. Shul, J.C. Zolper, J.M. Zavada and R.G. Wilson, 40th EIPBN Conf., Atlanta, GA, May 1996.

369. “Implant Activation and Redistribution of Dopants in GaN,” J.C. Zolper, S.J. Pearton, R.G. Wilson and R. Stall, 11th Int. Conf. Ion Implantation Technology, Austin, TX, June

26

1996. 370. “H Incorporation and its temperature Stability in SiC,” J.M. Zavada, R.G. Wilson, S.J.

Pearton and R.F. Davis, 7th European Conf. Diamond and Related Materials, Tours, France, September 1996.

371. “Parametric Study of Compound Semiconductor Etching Utilizing ICP Source,” C. Constantine, C. Barratt, D. Johnson, R.J. Shul, R. Rarlicek, J.W. Lee and S.J. Pearton, 1996 Spring MRS Meeting, San Francisco, CA, April 1996.

372 “C Doping of III-V Semiconductors by Ion Implantation,” S.J. Pearton and C.R. Abernathy, 7th Int. Symp. Shallow Levels in Semicond, Amsterdam, July 1996.

373. “High Temperature Stable W and WSix Ohmic Contacts on GaN and InGaN,” S.J. Pearton, C.R. Abernathy, A. Durbha, S. Donovan, J.D. MacKenzie, J.W. Lee, F. Ren, J.C. Zolper and M.W. Cole, 3rd Int. High Temp. Elect. Conf., Albuquerque, NM, June 1996.

374. “Thermally Stable Ohmic Contacts to n+GaN - a Structural, Chemical and Electrical Investigation,” M.W. Cole, W. Han, T. Monahan, F. Ren and S.J. Pearton, 3rd Int. High Temp. Elect. Conf., Albuquerque, NM, June 1996.

375. “GaN JFETs for High Temperature Operation,” J.C. Zolper, R.J. Shul, A.G. Baca, S.J. Pearton, R.A. Stall and R.G. Wilson, 3rd Int. High Temp. Elect. Conf., Albuquerque, NM, June 1996.

376. “Critical Issues in Compound Semiconductor Processing,” S.J. Pearton, 3rd Int. Workshop EXAMATEC 96, Freiburg, Germany, May 1996.

377. “Growth-Induced Alignment of the First Neighbor Shell of Carbon in AlxGa1-xAs,” M. Stavola, J.F. Zheng, C.R. Abernathy and S.J. Pearton, 1996 Fall MRS Meeting, Boston, December 1996.

378. “Chemical Etching of AlN and InAlN in KOH Solutions,” C.B. Vartuli, J.W. Lee, J.D. MacKenzie, S.J. Pearton, C.R. Abernathy, J.C. Zolper, R.J. Shul and F. Ren, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 1017 (1997).

379. “Comparison of ICl and IBr Plasmas for Dry Etching of III-Nitrides,” C.B. Vartuli, J.W. Lee, J.D. MacKenzie, S.J. Pearton, C.R. Abernathy and R.J. Shul, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 1023 (1997).

380. “Patterning of LiGaO2 and LiAlO 2 by Wet and Dry Etching,” J.W. Lee, S.J. Pearton, C.R. Abernathy, R.G. Wilson, B.L. Chai, F. Ren and J.M. Zavada, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 1041 (1997).

381. “Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures,” S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R. Karlicek and R.A. Stall, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 993 (1997).

382. “High Rate ECR Plasma Processing of Cu at Room Temperature,” K.B. Jung, J.W. Lee, Y.D. Park, J.R. Childress, S.J. Pearton and F. Ren, 1996 Fall MRS Meeting, Boston, December 1996.

383. “Chlorine-Based Plasma Etching of GaN,” R.J. Shul, R.D. Briggs, S.J. Pearton, C.B. Vartuli, C.R. Abernathy, J.W. Lee, C. Constantine and C. Barratt, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 969 (1997).

384. “Photoluminescence Reflectance and Magnetospectroscopy of Shallow Excitons in GaN,” B.J. Skaromme, H. Zhao, B. Goldenberg, J. Kong, M. Leonard, G.E. Bulman, C.R. Abernathy and S.J. Pearton, 1996 Fall MRS Meeting, Boston, December 1996; Mat.

27

Res. Soc. Symp. 449, 713 (1997). 385. “Comparison of NiAu, PdAu and CrAu Metallizations for Ohmic Contacts to p-GaN,” J.

Trexler, R. Kalicek, K. Evans, P. Holloway and S.J. Pearton, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 1091 (1997).

386. “Ion Implantation and Annealing Studies in III-V Nitrides,” J.C. Zolper, S.J. Pearton, J.S. Williams, H. Tan and R.A. Stall, 1996 Fall MRS Meeting, Boston, December 1996,; Mat. Res. Soc. Symp. 449, 981 (1997).

387. “Time-Resolved Photoluminescence Excitation Spectroscopy of Er Doped AlN Epilayer Prepared by MOMBE,” U. Hommerich, X. We, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.N. Schwartz, R.G. Wilson and J.M. Zavada, 1996 Fall MRS Meeting, Boston, December 1996.

388. “InN-based Ohmic Contacts to AlInN,” S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, C.B. Vartuli, S.J. Pearton, F. Ren, M.W. Cole and K. Jones, 1996 Fall MRS Meeting, Boston, December 1996; Mat. Res. Soc. Symp. 449, 1067 (1997).

389. “Growth of InAlN and InGaN by MOMBE for Device Applications,” J.D. MacKenzie, C.R. Abernathy, S.M. Donovan, S.J. Pearton and F. Ren, 1996 Fall MRS Meeting, Boston, December 1996.

390. “A Survey of Ohmic Contacts to Compound Semiconductors,” A.G. Baca, F. Ren, J.C. Zolper, R.D. Briggs and S.J. Pearton, Int. Conf. Metallurgical Coatings and Thin Films, San Diego, April 1997.

391. “Characterization of Damage in ECR Plasma Etched Semiconductors,” S.J. Pearton, 2nd Intl. Symp. Control Semicond. Interf., Karuizawa, Japan, October 1996.

392. “RTP of III-Nitrides,” J. Hong, C.B. Vartuli, C.R. Abernathy, J.D. MacKenzie, S.J. Pearton and J.C. Zolper, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

393. “Low Energy Electron-Enhanced Etching of III-N Semiconductors in a H2/Cl2 dc Plasma,” H.P. Gillis, D. Choutov, K. Martin, S.J. Pearton and C.R. Abernathy, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

394. “Comparison of Ohmic Metallization Schemes for InGaAlN,” F. Ren, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.J. Shul, J.C. Zolper and M.L. Lovejoy, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

395. “Dry Etching of InGaP in Magnetron Enhanced BCl3 Plasmas,” G.F. McLane, M. Wood, D. Eckart, J.W. Lee, K.N. Lee, S.J. Pearton and C.R. Abernathy, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

396. “High Density Plasma Etching of Compound Semiconductors,” R.J. Shul, G.B. McClellan, D.J. Rieger, S.J. Pearton, CR. Abernathy and C. Constantine, 43 rd Nat. Symp. AVS, Philadelphia, October 1996.

397. “Plasma Etching of III-Nitrides in ICl and IBr,” C.B. Vartuli, J.W. Lee, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and R.J. Shul, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

398. “ZnO as a Substrate for GaN,” J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, P. Holloway and B.H. Chai, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

399. “Fabrication of Spin Current FET Structures,” A. Cabbibo, J.R. Childress, S.J. Pearton, F. Ren and J.M. Kuo, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

400. “RIE of Sulphides and Oxides for Flat Panel EL Display Devices,” B. Pathangey, J. Lee, P. Holloway, S.J. Pearton and M. Davidson, 43 rd Nat. Symp. AVS, Philadelphia, October 1996.

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401. “Comparison of Dry Etch Chemistries for SiC,” G. McDaniel, S.J. Pearton, J.W. Lee, P. Holloway, F. Ren, J.M. Grow and M. Bhaskaran, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

402. “Damage Investigation in AlGaAs and InGaP Exposed to High Ion Density Ar and SFl Plasmas,” J.W. Lee, K.N. Lee, R.R. Stradtmann, C.R. Abernathy, S.J. Pearton and W.S. Hobson, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

403. “Patterning of Cu, Co, Fe and Ag for Magnetic Nanostructures,” K.B. Jung, Y. Park, J.A. Caballero, J.R. Childress, S.J. Pearton and F. Ren, 43rd Nat. Symp. AVS, Philadelphia, October 1996.

404. “Effects of H on Ca and Mg Acceptors in GaN,” J.W. lee, C.R. Abernathy and S.J. Pearton, ECS Meeting, Los Angeles, May 1996; ECS Proc. Vol. 96-2, 100 (1996).

405. “High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar,” J. Lee, S.J. Pearton, E. Lambers, J.M. Mileham, C.R. Abernathy, W.S. Hobson, F. Ren and R. Shul, ECS Meeting, Los Angeles, May 1996; ECS Proc. Vol. 96-2, 203 (1996).

406. “Device Processing of Wide Bandgap Semiconductors - Challenges and Directions,” S.J. Pearton, F. Ren, R. Shul and J. Zolper, 191st meeting of ECS, Montreal, May 1997; ECS Proc. Vol. 97-1, 138 (1997).

407. “A Structural and Chemical Investigation of WSix Ohmic Contacts to n+GaN,” M. Cole, D. Eckert, W. Han, F. Ren and S.J. Pearton, 191st ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 271 (1996).

408. “Effect of Dry Etching on III-Nitride Surface Properties,” F. Ren, S.J. Pearton, C.R. Abernathy, C. Vartuli and R.G. Wilson, 191st ECS Meeting, San Antonio, TX, October 1996; ECS Proc. Vol. 96-15, 289 (1996).

409. “Effect of Dry Etching on III-Nitride Surfaces,” F. Ren, S.J. Pearton, C.R. Abernathy and J. Lothian, 126th TMS Ann. Meeting, Orlando, FL, February 1997.

410. “Semiconductor Materials Processing using ICP Beam Source,” C. Constantine, R. Shul and S.J. Pearton, 126th TMS Ann. Meeting, Orlando, FL, February 1997.

411. “Effect of Ion Damage on Electrical and Optical Properties of p-GaAs and InGaP,” K. Lee, J. Lee, J. Hong, S.J. Pearton, C.R. Abernathy and W.S. Hobson, 126th TMS Meeting, Orlando, FL, February 1997.

412. “The Role of Ion Energy in Determining Structural and Electrical Quality of InN Grown by ECR and rf-MOMBE,” S. Donovan, J. MacKenzie, C.R. Abernathy, S.J. Pearton, P.C. Chow and J. Van Hove, 126th TMS Meeting, Orlando, FL, February 1997.

413. “Effect of Ion Energy on Optical Properties of Rae Earth Doped III-Nitrides Grown by rf MOMBE,” J. MacKenzie, S. Donovan, L. Abbaschian, C.R. Abernathy, S.J. Pearton, U. Hommerich, P. Chow, J. Van Hove and J. Zavada, 126th TMS Meeting, Orlando, FL, February 1997.

414. “High Density ECR Etching for Metals,” K. Jung, J. Lee, Y. Park, J. Childress and S.J. Pearton, 126th TMS Meeting, Orlando, FL, February 1997.

415. “Comparison of ECR Plasma Chemistries for Etching of InGaP and AlGaP,” J. Hong, J. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, W.S. Hobson and F. Ren, 126th TMS Meeting, Orlando, FL, February 1997.

416. “Comparison of Dry Etching of III-V Semiconductors in ICl and IBr ECR Plasmas,” J. Lee, J. Hong, E. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, 126th TMS Meeting, Orlando, FL, February 1997.

417. “Dry Etching Processes for Fabrication of QWIPs and Other Detector Structures,” S.J.

29

Pearton, Photonics West, SPIE Ann. Symp., San Jose, February 1997; SPIE Proc. 2999, 118 (1997).

418. “Processing Challenges for GaN-based Photonic and Electronic Devices,” S.J. Pearton, J. Zolper, R. Shul, F. Ren and A. Katz, 1997 Spring MRS Meeting, San Francisco, CA, April 1997; Mat. Res. Soc. Symp. 468, 331 (1997).

419. “Patterning of GaN in high Density Cl2 and BCl3 Plasmas,” R. Shul, R. Briggs, J. Han, S.J. Pearton, C. Vartuli and J. Lee, 1997 Spring MRS Meeting, San Francisco, CA, April 1997; Mat. Res. Soc. Symp. 468, 367 (1997).

420. “Comparison of Dry Etch Damage in GaAs/AlGaAs HBTs Exposed to ECR and ICP Ar Plasmas,” J. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, C. Constantine and C. Barratt, 1997 Spring MRS Meeting, San Francisco, April 1997.

421. “Comparison of High Density Plasmas for the Etching of InGaAlP Alloys,” J. Hong, J. Lee, E. Lambers, C.R. Abernathy, S.J. Pearton and W. Hobson, 1997 Spring MRS Meeting, San Francisco, April 1997.

422. “ICP Etch Damage in GaAs and InP Schottky Diodes,” J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, R.J. Shul and C. Constantine, 1997 Spring MRS Meeting, San Francisco, April 1997.

423. “C Implantation and Surface Degradation of InGaP,” C. Vartuli, C.R. Abernathy, S.J. Pearton, J.C. Zolper and A. Howard, 1997 Spring MRS Meeting, San Francisco, April 1997.

424. “Implantation Activation Anneal of GaN at >1000oC,” J. Zolper, J. Han, R. Biefeld, S.J. Pearton, J.S. Williams, H. Tan and R. Karlicek, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 401 (1997).

425. “Development of GaN and InGaN Gratings by Dry Etching,” J. lee, J. Hong, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren and P. Sciortino, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 379 (1997).

426. “Plasma Damage Effects in InAlN FETs,” F. Ren, Y. Chen, J. MacKenzie, S. Donovan, C. Vartuli, C.R. Abernathy, J. Lee, S.J. Pearton and R.G. Wilson, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 385 (1997).

427. “Current Transport in W and SWix Ohmic Contacts to InGaN and InN,” C. Vartuli, S.J. Pearton, C.R. Abernathy, j. MacKenzie, M. Lovejoy, R. Shul, J. Zolper, A. Baca, K. Jones and F. Ren, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 413 (1997).

428. “ICP Dry Etching of III-Nitrides,” C. Vartuli, J. Lee, J. MacKenzie, C.R. Abernathy, S.J. Pearton, R.J. Shul, A. Katz, A.Y. Polyakov and M. Shin, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 393 (1997).

429. “Er Incorporation and Optical Activity in III-V Nitrides Grown by MOMBE,” J. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hommerich, F. Ren, R.G. Wilson and J.M. Zavada, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 123 (1997).

430. “Substrate Effects on Growth of InN,” S. Donovan, J. MacKenzie, C.R. Abernathy, P. Holloway, F. Ren, J. Zavada and B. Chai, 1997 Spring MRS Meeting, San Francisco, April 1997; Mat. Res. Soc. Symp. 468, 161 (1997).

431. “RTP of III-Nitrides,” J. Hong, J. Lee, C. Vartuli, J. MacKenzie, S. Donovan, R. Crockett, C.R. Abernathy, S.J. Pearton, J. Zolper and F. Ren, 1997 Spring MRS Meeting, San Francisco, April 1997.

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432. “Technological Issues for Application of Group III-Nitride Semiconductors to High Temperature and high Power Electronics,” J.C. Zolper, R.J. Shul, S.J. Pearton and F. Ren, 2nd Workshop on High Temp. Power Electronics for Vehicles, Adelphi, MD, April 1997.

433. “Comparison of Dry Etch Damage in GaAs/AlGaAs HBTs Exposed to ECR and ICP Ar Plasmas,” J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, C. Constantine, C. Barratt and R.J. Shul, Surf. Analysis ’97, Albuquerque, NM, May 1997.

434. “High Density Plasma Etching of Wide Bandgap GaN,” R.J. Shul, G.B. McClellan, S.J. Pearton, C.B. Vartuli and J.W. Lee, Surf. Analysis ’97, Albuquerque, NM, May 1997.

435. “Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges,” J.C. Zolper and S.J. Pearton, Electrochemical Society Meeting, Paris, Sept. 1997.

436. “The Role of Plasma Chemistry of Ion Density in Dry Etching of Nitrides,” C. Vartuli, S.J. Pearton, C.R. Abernathy, R.J. Shul and F. Ren, Electrochemical Society Meeting, Paris, Sept. 1997.

437. “Electrical and Optical Properties of C, O and H in III-V Nitrides,” S.J. Pearton, J.W. Lee, C.R. Abernathy, R.G. Wilson, J.M. Zavada and J.C. Zolper, Electrochemical Society Meeting in Paris, Sept. 1997.

438. “Plasma Etching of III-Nitrides,” R.J. Shul and S.J. Pearton, 17th IUVSTA Workshop: Growth and Processing of GaN and Related Materials, Hawaii, August 1997.

439. “Low Bias Etching of III-Nitrides,” H. Cho, S.J. Pearton, R.J. Shul, F. Ren, C.R. Abernathy, J.D. MacKenzie, J. Han and S.M. Donovan, 17th IUVSTA Workshop, Hawaii, August 1997.

440. “Si Implantation Activation Annealing in GaN,” J.C. Zolper, J. Han, S.J. Pearton, J.S. Williams, H. Tan and R. Stall, 17th IUVSTA Workshop, Hawaii, August 1997.

441. “Optimization of InN for Ohmic Contact Formation,” S.M. Donovan, C.R. Abernathy, F. Ren, S.J. Pearton, J.D. MacKenzie, J.M. Zavada and B. Chai, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

442. “Selective ICP Etching of Group III Nitrides in Cl2 and BCl3 Plasmas,” R.J. Shul, M. Bridges, C. Willison, J. Lee, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie and S.M. Donovan, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

443. “Effect of Atomic Hydrogen on Er Luminescence in AlN,” S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, V. Hommerich, X. Wu, J.M. Zavada, R.G. Wilson and R.N. Schwartz, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

444. “Comparison of ICP and ECR Cl2 and CH4/H2 Etching of III-Nitrides,” C. Vartuli, J.W. Lee, S.M. Donovan, H. Cho, C.R. Abernathy, S.J. Pearton, R.J. Shul and C. Constantine, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

445. “ECR Plasma Etching of Oxides and SrS and ZnS-based EL Materials for Flat Panel Displays,” J.W. Lee, M.R. Davidson, B. Pathangey, P.H. Holloway, A. Davydov, T.J. Anderson, S.J. Pearton and F. Ren, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

446. “Comparison of Plasma Chemistries for ICP Etching of InGaAlP Alloys,” J. Hong, J. Lee, C.R. Abernathy, E.S. Lambers, S.J. Pearton, R.J. Shul and W.S. Hobson, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

447. “Comparison of ECR Dry Etch Chemistries for SiC,” G. McDaniel, J.W. Lee, P.H. Holloway, S.J. Pearton and E.S. Lambers, 44th Nat. Symp. AVS, San Jose, Oct. 1997.

31

448. “Development of ECR and ICP High Density Plasma Etching for Patterning of NiFe and NiFeCo,” K.B. Jung, J.R. Childress, S.J. Pearton, M. Jenson and A. Hurst, 44th Natl. Symp. AVS, San Jose, Oct. 1997.

449. “High Rate Etching of Metals for Magnetoelectric Applications,” S.J. Pearton, K.B. Jung, J. Hong, J.W. Lee, J.A. Caballero, J.R. Childress, M. Jenson and A. Hurst, Jr., 27th SOTAPOCS Symp. 192nd Meeting ECS, Paris, August 1997; ECS Proc. Vol. 97-21, 270 (1997).

450. “Dry and Wet Etch Processes for NiMnSb, LaCaHaO3 and Related Materials,” J. Hong, J.J. Wang, E.S. Lambers, J.A. Caballero, J.R. Childress, S.J. Pearton, K. Dahmen, S. von Molnar, F. Cadiou and F. Sharifi, 1997 Fall MRS, Boston, Dec. 1997.

451. “In-situ Monitoring of Etch By-Products During RIBE of GaAs in Cl2/Ar,” J.W. Lee, S.J. Pearton, C.R. Abernathy, G.A. Vawter, R.J. Shul, M. Bridges and C. Willison, 1997 Fall MRS, Boston, Dec. 1997.

452. “Hydrogen Passivation of Er-doped AlN,” S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, U. Hommerich, J.M. Zavada, F. Ren, R.G. Wilson and R.N. Schwartz, 1997 Fall MRS, Boston, Dec. 1997.

453. “ICP Etching of SiC,” J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J. Grow, F. Ren and R.J. Shul, 1997 Fall MRS, Boston, Dec. 1997.

454. “High Temperature PC and PL Excitation Spectroscopy of GaN(Er),” V. Hommerich, M. Thaik, T. Brown, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson, R.N. Schwartz and J.M. Zavada, 1997 Fall MRS, Boston, Dec. 1997.

455. “Etching and H Incorporation in ScAlMgO4,” C. Brandle, F. Ren, R.G. Wilson, J.W. Lee, S.J. Pearton and J.M. Zavada, 1997 Fall MRS, Boston, Dec. 1997.

456. “Wet Chemical Etching Survey of III-Nitrides,” H. Cho, D. Hays, C. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, F. Ren, J.C. Zolper and R.J. Shul, 1997 Fall MRS, Boston, Dec. 1997.

457. “Cl2-based Dry Etching of the AlGaInN System in ICP’s,” H. Cho, C. Vartuli, C.R. Abernathy, S.M. Donovan, S.J. Pearton, R.J. Shul and J. Han, 1997 Fall MRS, Boston, Dec. 1997.

458. “Comparison of Dry Etch Techniques for GaN, InN and AlN,” R.J. Shul, A. Vawter, C. Willison, M. Bridges, J.W. Lee, S.J. Pearton and C.R. Abernathy, 1997 Fall MRS, Boston, Dec. 1997.

459. “Recent Progress in Implantation and Annealing of GaN and AlGaN,” J.C. Zolper, J. Han, S. van Deusen, M.H. Crawford, R. Biefeld, J. Jun, S. Suski, J. Baranowski and S.J. Pearton, 1997 Fall MRS, Boston, Dec. 1997.

460. “Introduction of Ions into Wide Band Gap Semiconductors,” H.P. Maruska, M. Lioubtchenko, T. Tetreault, M. Osinki, S.J. Pearton, M. Schurmann, R. Vaudo, S. Sakai, Q. Chen and R.J. Shul, 1997 Fall MRS, Boston, Dec. 1997.

461. “A Novel Technique for RTP Annealing of Compound Semiconductors,” M. Fu, V. Sarvepalli, R. Singh, C.R. Abernathy, X. Cao, S.J. Pearton and J.A. Sekhar, 1997 Fall MRS, Boston, Dec. 1997.

462. “Selective Etching of Wide Bandgap Nitrides,” R.J. Shul, C. Willison, M. Bridges, J. Han, J.W. Lee, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie and S.M. Donovan, 1997 Fall MRS, Boston, Dec. 1997.

463. “GaN Device Processing,” S.J. Pearton, F. Ren, J.C. Zolper and R.J. Shul, 1997 Fall MRS, Boston, Dec. 1997.

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464. “Dielectrics for GaN-Based MIS Diodes,” F. Ren, C.R. Abernathy, J.D. MacKenzie, B. Gila, S.J. Pearton, M. Hong, M. Macos, M. Schurmann, A.G. Baca and R.J. Shul, 1997 Fall MRS, Boston, Dec. 1997.

465. “Plasma Etching of NiFe/Cu and NiMnSb/Al2O3 Multilayers for Sub-micron Pattern Definition,” K.B. Jung, J. Hong, J.A. Caballero, J.R. Childress, S.J. Pearton, F. Sharifi, M. Jenson and A. Hurst, 3rd Intl. Symp. Metallic Multilayers ’98, Vancouver, June 1998.

466. “Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlGaAs,” J. Zhou, C. Song, J. Zheng, M. Stavola, C.R. Abernathy and S.J. Pearton, Proc. 19th Intl. Conf. Defects in Semicond., Aveiro, Portugal, July 1997.

467. “Thermal Stability of WSiX Ohmic Contacts on GaN,” S.J. Pearton, S.M. Donovan, C.R. Abernathy, F. Ren, J.C. Zolper, M. Cole, A. Zeitouny, M. Eizenberg and R.J. Shul, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

468. “Effects of H+ Implantation into GaN,” S.J. Pearton, R.G. Wilson, J.M. Zavada, C. Song, M.G. Weinstein and M. Stavola, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

469. “Novel Plasma Chemistries for Highly Selective Dry Etching of InGaN,” H. Cho, J. Hong, T. Maeda, S.M. Donovan, C.R. Abernathy, S.J. Pearton and R.J. Shul, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

470. “Ultra-high Temperature RTA of GaN,” X. Cao, R. Singh, S.J. Pearton, M. Fu, J. Seckhar, R.G. Wilson and J.C. Zolper, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

471. “High Density Plasma Etching of NiFe, NiFeCo and NiMnSb-based Multilayers for Magnetic Storage Elements,” K.B. Jung, J. Hong, J.A. Caballero, J.R. Childress, S.J. Pearton, M. Jenson and A. Hurst, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

472. “W and WSiX InAlN Ohmic Contracts to GaN,’ A. Zeitouny, M. Eizenberg, S.J. Pearton and F. Ren, 1998 Spring E-MRS Meeting, Strasbourg, France, June 1998.

473. “ECR-CVD SiN X for T-gate Passivation,” F. Ren, J. LaRoche, T. Anderson, S.J. Pearton, J.W. Lee, D. Johnson, J. Lothian, R.J. Shul and C.S. Wu, 193rd ECS Meeting, San Diego, May 1998.

474. “Evaluation of Er-doped III-Nitride Semiconductors for Optoelectronic Applications,” V. Hommerich, M. Thaik, J.M. Zavada, R.N. Schwartz, R.G. Wilson, S.J. Pearton, C.R. Abernathy and J.D. MacKenzie, 193rd ECS Meeting, San Diego, May 1998.

475. “Low Damage, Highly Anisotropic Dry Etching of SiC,” J.J. Wang, J. Hong, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J.M. Grow, F. Ren and R.J. Shul, 4th Intl. High Temp. Electronics Conf., Albuquerque, June 1998.

476. “High Temperature Stable WSiX Contacts on GaN,” S.J. Pearton, S.M. Donovan, C.R. Abernathy, F. Ren, J.C. Zolper, M.W. Cole, Z. Zeitouny, M. Eizenberg and R.J. Shul, 4th Intl. High Temp. Electronics Conf., Albuquerque, June 1998.

477. “Vibrational Spectroscopy and Thermal Stability of Implanted Hydrogen in GaN,” M. Weinstein, C. Song, S.J. Pearton, R.G. Wilson, R.J. Shul, K.P. Killeen and M.J. Ludowise, 1998 March Meeting of APS, Los Angeles, March 1998.

478. “A New Probe to Perform Magneto-optical Kerr Measurements on Thin Films and Multilayers,” W. Geerts, J.R. Childress, S.J. Pearton, T. Schmeidel and V. Williams, 1998 March Meeting of APS, Los Angeles, March 1998.

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479. “Plasma Etching for Novel Electronic and Magnetic Thin Films,” S.J. Pearton, J.W. Lee, K.B. Jung, J. Hong, H. Cho, E.S. Lambers and J.R. Childress, 1998 Florida AVS Symp., Orlando, February 1998.

480. “Processing Challenges for GaN-Based Electronic and Photonic Devices,” S.J. Pearton, 22nd Workshop on Compound Semicond. Devices and IC’s, Berlin, Germany, May 1998.

481. “Growth and Luminescence Properties of III-N : Er Materials Doped During BE,” J.D. MacKenzie, C.R., S.J. Pearton, U. Hommerich, F. Ren and J.M. Zavada, 1998 Spring MRS, San Francisco, April 1998.

482. “Hydrogenation and Defect Creation in GaAs-Based Material Devices During High Density Plasma Processing,” J.W. Lee, C.R. Abernathy, T. Maeda, S.J. Pearton, F. Ren, C. Constantine and R.J. Shul, 1998 Spring MRS, San Francisco, April 1998.

483. “Ultra-High Implant Activa tion Efficiency in GaN Using Novel High Temperature RTP System,” X. Cao, C.R. Abernathy, R. Singh, S.J. Pearton, M. Fu, J. Fekhar, J.C. Zolper, D.J. Rieger, J. Han, T. Drummond, R.J. Shul and R.G. Wilson, 1998 Spring MRS, San Francisco, April 1998.

484. “GaN Etching in Cl2/BCl3 Plasmas,” R.J. Shul, C. Ashby, M. Bridges, J. Han, S.J. Pearton, J.W. Lee, L. Zhang and L. Lester, 1998 Spring MRS, San Francisco, April 1998.

485. “Comparison of Novel Cl2, Br2 and I2 Plasma Chemistries for Anisotropic Trench Etching in GaN, InN and AlN, H. Cho, T. Maeda, J. MacKenzie, S. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul and J. Han, 1998 Spring MRS, San Francisco, April 1998.

486. “Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges,” J. Wang, H. Cho, E. Lambers, S.J. Pearton, M. Ostling, C. Zetterling, J.M. Grow, F. Ren, R.J. Shul and J. Han, 1998 Spring MRS, San Francisco, April 1998.

487. “Hydrogen in GaN – Experiments,” S.J. Pearton and J.W. Lee, 1998 Spring MRS, San Francisco, April 1998.

488. “Plasma Chemistries for Etching of LaCaMnO3/SmCo CMR Structures,” J.J. Wang, K.B. Jung, J.R. Childress, S.J. Pearton, F. Sharifi, K. Dahman, E.S. Gillman, F. Cadeau, R. Rani and L. Chen, 1998 Spring MRS, San Francisco, April 1998.

489. “ICP Etching of NiFe and NiFeCo in GMR Structures,” K.B. Jung, J.R. Childress, S.J. Pearton, M. Jenson and A. Hurst, 1998 Spring MRS, San Francisco, April 1998.

490. “New Plasma Chemistries for Etching III-V Compound Semiconductors,” T. Maeda, H. Cho, J. Hong and S.J. Pearton, 40th EMC Conf., Charlottesville, VA, June 1998.

491. “III-N : Er Materials Doped During Growth by CBE,” J. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hommerich and J.M. Zavada, 40th EMC Conf., Charlottesville, VA, June 1998.

492. “Damage to III-V Devices During ECR-CVD,” F. Ren, J.W. Lee, D. Johnson, K. MacKenzie, T. Maeda, C.R. Abernathy, Y.-B. Hahn, S.J. Pearton and R.J. Shul, 45th Int. Symp. AVS, Baltimore, Nov. 1998.

493. “III-Nitride Dry Etching-Comparison of ICP Chemistries,” H. Cho, Y.-B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, S.J. Pearton, J. Han and R.J. Shul, 45 th Int. Symp. AVS, Baltimore, Nov. 1998.

494. “Deposition of AlN Gate Dielectrics,” B. Gila, S.M. Donovan, C.R. Abernathy, K.N. Lee, J.D. MacKenzie, F. Ren, S.J. Pearton and S.N.G. Chu, 45 th Int. Symp. AVS, Baltimore, Nov. 1998.

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495. “Redistribution and Activation of Implanted S, Se, Te, Be, Zn and C in GaN,” R.G. Wilson, J.M. Zavada, X. Cao, S.J. Pearton, R.K. Singh, M. Fu, J. Sekhar, V. Sarvepalli, R.J. Shul, J. Han, D.J. Rieger and C.R. Abernathy, 45th Int. Symp. AVS, Baltimore, Nov. 1998.

496. “W-based Ohmic Contacts on p- and n-type GaN,” X. Cao, F. Ren, S.J. Pearton, A. Zeitouny, M. Eizenberg, J.C. Zolper, C.R. Abernathy, R.J. Shul and J. Lothian, 45th Int. Symp. AVS, Baltimore, Nov. 1998.

497. “Comparison of Cl2 and F2 Based Chemistries for the ICP Etching of NiMnSb Thin Films,” J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, 45th Int. Symp. AVS, Baltimore, Nov. 1998.

498. “Effect of Noble Gas Addition (He, Ar, Xe) on Cl2-Based Etching of NiFe and NiFeCo,” K.B. Jung, H. Cho, Y.-B. Hahn, E.S. Lambers, Y.D. Park, S.J. Pearton, J.R. Childress, M. Jenson and A.T. Hurst, 45th Int. Symp. AVS, Baltimore, Nov. 1998.

499. “Wet and Dry Etch Selectivity for the GaAs/AlGaAs and GaAs/InGaP Systems,” D. Hays, C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, 24th

SOTAPOCS Symp., 194th ECS Meeting, Boston, Nov. 1998.

500. “Temperature Effect of Metal Contact on GaN,” F. Ren, S.N.G. Chu, J.R. Lothian, S.J. Pearton, C.R. Abernathy, A.G. Baca, J. Han, M.J. Shurman, M. Hong, X. Cao, B.P. Gila and T.M. Ake, III-V Materials and Processes, 194th

ECS Meeting, Boston, Nov. 1998. 501. “High Temperature Stable W and WSix Contacts on p- and n-type GaN,” X.A. Cao, F.

Ren, S.J. Pearton, A. Zeitouny, M. Eizenberg, J.C. Zolper, C.R. Abernathy, J. Han, R.J. Shul and J.R. Lothian, III-V Materials and Processes, 194th

ECS meeting, Boston, Nov. 1998.

502. “Preventing Galvanic Effect Etching of GaAs During the Sample Wet Cleaning with SiO and SiO2 Passivation,” J.R. LaRoche, F. Ren, J.R. Lothian, J. Hong, E.S. Lambers and S.J. Pearton, 24th SOTAPOCS Symp., 194th ECS Meeting, Boston, Nov. 1998.

503. “Plasma Etching of NiFeCo, NiMnSb and CoFeB-based Multilayers,” K. Jung, H. Cho, T. Feng, J. Caballero, Y.D. Park, J.R. Childress, F. Ren and S.J. Pearton, 5th Intl. Symp. Mag. Mat. Processes and Devices, 194th ECS Meeting, Boston, Nov. 1998.

504. “Transport Studies of 1-D Magnetic Wires,” J. Marburger, H.D. Hudspeth, F. Sharifi, M.E. Overberg, C.R. Abernathy and S.J. Pearton, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

505. “Comparison of Characteristics of Dry Etching of LaCaMnO3, NiMnSb and NiFe Thin Films,” K.B. Jung, H. Cho, J.J. Wang, J. Caballero, T. He, S.J. Pearton, J.R. Childress and K.H. Dahmen, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

506. “Electron Tunnelling Measurements on LaCaMnO3,” H.D. Hudspeth, F. Sharifi, S. Pietambran, D. Kumar, R.K. Singh, S.J. Pearton, E. Gillman, M. Li, K.H. Dahmen and S. Von Molnar, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

507. “ICP Etching of Group III Antimonides in BC l3/Ar, Cl2/Ar and BCl3/Cl2/Ar Chemistries,” L. Zhang, L.F. Lester, R.J. Shul, A. Allerman, C.G. Wilson, J. Hong, S.J. Pearton and R.L. Leavitt, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

508. “Spectroscopy of Proton Implanted GaN,” M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinska, G.D. Watkins, S.J. Pearton and R.G. Wilson, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

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509. “RTP of Implanted GaN up to 1500°C,” X. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu and J. Sekhar, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

510. “Behavior of W and WSix Contact Metallization on n- and p-type GaN,” X. Cao, F. Ren, J. Lothian, S.J. Pearton, C.R. Abernathy, J.C. Zolper, M.W. Cole, A. Zeitoury, M. Eizenberg and R.J. Shul, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

511. “ICP Etching of III-Nitrides in C12/Xe, Cl2/Ar and Cl2/He,” H. Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, J. Han and R.J. Shul, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

512. “Photoelectrochemical Etching of InGaN,” H. Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, J. Han and R.J. Shul, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

513. “Group III-Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas,” R.J. Shul, L. Zhang, C.G. Wilson, J. Han and R.J. Shul, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

514. “Temperature Effect on Metal Contacts on n- and p-type GaN,” F. Ren, S. Chu, J. Lothian, S.J. Pearton, C.R. Abernathy, A.G. Baca, J. Han, X.A. Cao, B.P. Gila and T.M. Ake, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

515. “RBS Lattice Site Location and Damage Recovery Studies on Er-implanted GaN,” E. Alves, M.F. de Silva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy and S.J. Pearton, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

516. “Optical Characterization of Er-doped III-Nitrides Prepared by MOMBE,” U. Hommerich, M. Thaik, G. Ofori-Boadu, J. Prejean, J.T. Seo, J. MacKenzie, C.R. Abernathy, S.J. Pearton, J.M. Zavada, R.G. Wilson and O. Ambacher, 1998 Fall MRS Meeting, Boston, MA, Dec. 1998.

517. “WSix-based High Temperature Ohmic Contacts on n- and p-GaN,” T. Ake, F. Ren, J. Lothian, S. Chu, S.J. Pearton, E.S. Lambers, M. Schurman and A. Baca, AIChE Ann. Meeting, Miami, Nov. 1998.

518. “Study of ICP NH3 Plasma Damage on GaAs Schottky Contact,” J.W. Lee, L.C. Meyer, M. Huang, J. Lothian, J. LaRoche, T.J. Anderson, F. Ren and S.J. Pearton, AIChE Ann. Meeting, Miami, Nov. 1998.

519. “Transport Studies of One-dimensional magnetic Wires,” J. Marburger, H.D. Hudspeth, F. Sharifi and S.J. Pearton, APS Centennial meeting, Atlanta, March 1999.

520. “Dielectrics for the Fabrication of Compound Semiconductors MOS(MIS) FETs,” B. Gila, J. LaRoche, F. Ren, K.N. Lee, K. Harris, V. Krishnamoorthy, J.D. MacKenzie, C.R. Abernathy and S.J. Pearton, APC Centennial Meeting, Atlanta, March 1999.

521. “Long-term Corrosion Stability of Patterned NiFe/Cu/NiFeCo Multilayers after Cl2-based Plasma Etching,” K.B. Jung, H. Cho, J. Marburger, F. Sharifi, E. Lambers and S.J. Pearton, APC Centennial Meeting, Atlanta, March 1999.

522. “Effect of Annealing on the PL Intensity from Er-doped GaN,” M. Overberg, J. Brand, J. MacKenzie, C.R. Abernathy and S.J. Pearton, APS Centennial Meeting, Atlanta, March 1999.

523. “Helium Isolation Implant for GaN-based FETs,” G. Dang, X. Cao, F. Ren, S.J. Pearton, J. Han and R.J. Shul, Florida Chapter of Am. Vac. Soc., Orlando, March 1999.

524. “ECR-CVD of SiNx for T-gate passivation,” J. LaRoche, F. Ren, S.J. Pearton, J.R. Lothian, J.W. Lee and D. Johnson, Florida Chapter of Am. Vac. Soc., Orlando, March 1999.

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525. “Tri- layer e-beam Resist for Submission T-gate GaN-based FETs,” M. Mshewa, H. Hudspeth, F. Sharifi, S.J. Pearton and F. Ren, Florida Chapter of Am. Vac. Soc., Orlando, March 1999.

526. “Novel Emitter-Base Self-Aligned Process for AlGaN/GaN HBTs,” X. Cao, H. Cho, S.J. Pearton, C.R. Abernathy, F. Ren, J. Han, R.J. Shul and A.G. Baca, Florida Chapter of Am. Vac. Soc., Orlando, March 1999.

527. “Cl2-based Dry Etching of Doped Manganate Perovskites: PrBaCaMnOx and LaSrMnOx,” K.P. Lee, K.B. Jung, H. Cho, D. Kumar, S. Pietambaram, R.K. Singh, P.H. Hogan, K.H. Duhmer, Y.B. Hahn and S.J. Pearton, Florida Chapter of Am. Vac. Soc., Orlando, March 1999.

528. “GaN/AlGaN HBT Fabrication,” F. Ren, J. Han, R. Hickman, P.P. Chow, J.J. Klaassen, J.R. LaRoche, K.B. Jung, H. Cho, X.A. Cao, S.M. Donovan, R.F. Kopf, R.G. Wilson, A.G. Baca, R.J. Shul, L. Zhang, C.G. Wilson, C.R. Abernathy and S.J. Pearton, Workshop on Wide Bandgap Bipolar Devices, Panama City, FL, January 1999.

529. “High Density Plasma Etching of Group III-Nitride Films for Device Application,” R.J. Shul, L. Zhang, A. Baca, J. Han, M. Crawford, C. Willison, S.J. Pearton, F. Ren, J.C. Zolper and L.F. Lester, 195th ECS Meeting, Seattle, Washington, May 1999; ECS Proc. Vol. 99-4, 25 (1999).

530. Effect of Impurity Concentration on PL Intensity from Er-doped GaN,” M. Overberg, J. Brand, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and J.M. Zavada, 195th ECS Meeting, Seattle, Washington, May 1999; ECS Proc. Vol. 99-4, 195 (1999).

531. “GaN MOSFETs,” F. Ren, S.J. Pearton, C.R. Abernathy, A.G. Baca, P. Chang, R.J. Shul, S.N. G. Chu, M. Hong, J.R. Lothian and M. Schurmann, 195th ECS Meeting, Seattle, Washington, May 1999; ECS Proc. Vol. 99-4, 169 (1999).

532. AlGaN and GaN UV Photodetectors,” R. Hickman, J. Van Hove, J. Klaassen, C. Polley, A. Wowchack, P. Chow, K.B. Jung, H. Cho and S.J. Pearton, 195th ECS Meeting, Seattle, Washington, May 1999; ECS Proc. Vol. 99-4, 201 (1999).

533. “In-Situ Plasma Cleaning Processes for Prevention of Corrosion on Dry Etched Magnetic Multilayer,” K.B. Jung, E.S. Lambers, S.J. Pearton, J. Marburger and F. Sharifi, MRS Spring Meeting, San Francisco, April 1999.

534. “Dry Etching to Form Submicron Features in CMR Oxides: PaBa CaMnOX and LaSrMnO X,” K.B. Jung, H. Cho, D. Kumar, S. Pietumbraram, R.K. Singh, Y.B. Hahn, S.J. Pearton, P. Hogan and K.H. Dahmen, MRS Spring Meeting, San Francisco, April 1999.

535. “Fabrication and Performance of GaN/AlGaN HBTs,” F. Ren, J. LaRoche, C.R. Abernathy, H. Cho, K.B. Jung, S.J. Pearton, J.M. Van Hove, P.O. Chow, R. Hickman, J.J. Klaassen, R.F. Kopf, R.G. Wilson, J. Baca, H. Han, R.J. Shul and A.G. Baca, MRS Spring Meeting, San Francisco, April 1999.

536. “Activation Characteristics of Donor and Acceptor Implants in GaN,” X.A. Cao, S.J. Pearton, R.K. Singh, R.G. Wilson, J. Sekhar, J.C. Zolper, J. Han, D.J. Rieger, R.J. Shul, H.J. Guo, S.Y. Pennycook and J.M. Zavada, MRS Spring Meeting, San Francisco, April 1999.

537. “Novel in-situ Ion Bombardment Process for a Thermally Stable (>800oC) Plasma Deposited Dielectric,” F. Ren, J. Lothian, S.J. Pearton, R.G. Wilson, J. LaRoche, J.W. Lee and J.M. Zavada, MRS Spring Meeting, San Francisco, April 1999.

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538. “Comparison of Dielectrics for Fabrication of Compound Semiconductor MOSFETs, B. Gila, J. LaRoche, F. Ren, K.N. Lee, K. Harris, J. MacKenzie, C.R. Abernathy and S.J. Pearton, MRS Spring Meeting, San Francisco, April 1999.

539. “Wet and Dry Etching Characteristics of e-beam Deposited SiO and SiO 2,” J. LaRoche, F. Ren, J. Lothian, J. Hong, S.J. Pearton and E. Lambers, MRS Spring Meeting, San Francisco, April 1999.

540. “High Density Plasma Etch Damage of GaN,” R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, S.J. Pearton and J.C. Zolper, MRS Spring Meeting, San Francisco, April 1999.

541. “Selective Dry Etching in the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems,” D. Hays, C.R. Abernathy, W. Hobson, S.J. Pearton, J. Han, R.J. Shul, H. Cho, K.B. Jung, F. Ren and Y.B. Hahn, MRS Spring Meeting, San Francisco, April 1999.

542. “Anisotropic Pattern Transfer in GaN by Photo-enhanced Wet Etching,” H. Cho, S.M. Donovan, C.R. Abernathy, F. Ren, J. Han, R.J. Shul and S.J. Pearton, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

543. “Interfacial Characteristics of AlN to Si, SiC and GaN,” K. Harris, B. Gila, F. Ren, J. LaRoche, K. Lee, J. MacKenzie, C. Zetterling, M. Ostling, S.N.G. Chu, C.R. Abernathy and S.J. Pearton, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

544. “Selective Dry Etching Using ICP: GaAs/AlGaAs and GaAs/InGaP,” D. hays, H. Cho, K.B. Jung, Y.B. Hahn, C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

545. “Comparison of Characteristics of Dry Etching of LaCaMnOx, NiMnSb and NiFe Thin Films,” K.B. Jung, H. Cho, J.J. Wang, J. Caballero, T. Feng, J.R. Childress, K.H. Dahmen and S.J. Pearton, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

546. “ICP Cl2/Ar Plasma Damage on GaN Schottky Diodes,” A. Zhang, H. Cho, F. Ren, S.J. Pearton, J.M. Van Hove, R. Hickman, J.J. Klaassen and R.J. Shul, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

547. “GaN-based Electronics for High Temperature Applications,” F. Ren, S.J. Pearton, C.R. Abernathy, J.M. Van Hove, P.P. Chow, R. Hickman, J.J. Klaassen, J. Han, A.G. Baca and R.J. Shul, 27th Appl. Vac. Sci. Technol. Symp., Orlando, FL, March 1999.

548. “Development of Low Temperature SiN x and SiO 2 Films by ICP-CVD,” J.W. Lee, K.D. MacKenzie, D. Johnson, S.J. Pearton, F. Ren and J.N. Sasserath, MRS Spring Meeting, San Francisco, April 1999.

549. “Development of Chemically-Assisted Dry Etching Methods for Magnetic Device Structures,” K.B. Jung, H. Cho, J. Marburger, F. Sharifi, R.K. Singh, D. Kumar, K.H. Dahmen and S.J. Pearton, 43rd Electron, Ion and Photon Beam and Nanofabrication Conf, Marco Island, FL, June 1999.

550. “Relative Merits of Cl2 and CO/NH3 Plasma Chemistries for Dry Etching of MRAM Device Elements,” K.B. Jung, H. Cho, E.S. Lambers, Y.B. Hahn, Y.D. Park, S.J. Pearton, S. Onishi, D. Johnson, A. Hurst and J.R. Childress, 43rd Ann. Conf. Magn. Magn. Mater., Miami, Nov. 1998.

551. “A New Optical Sensor for Real-Time In-Situ Endpoint Monitoring During Dry Etching of III-V Ternary Multi-Stack Layers,” K. Liddane, R. Benferhat, J.W. Lee, R. Westerman, D. Johnson, J.F. Donohue, J.N. Sasserath and S.J. Pearton, SPIE Conf. 3882,

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Process, Equipment and Materials Control in IC Manufacturing, Santa Clara, CA, Sept. 1999.

552. “In-situ Er-doping of GaN and the Effect of Surface Morphology on Room Temperature PL,” J. Zavada, M. Overberg, C.R. Abernathy, S.J. Pearton and R.G. Wilson, 3rd Int. Conf. Nitride Semicond. Montpellier, France, July 1999.

553. “Dielectric Passivation/Oxides on Compound Semiconductors,” F. Ren, M. Hong, S.J. Pearton, C.R. Abernathy, G. Dang and J.R. Lothian, 46th Int. Symp. AVS, Seattle, Oct. 1999.

554. “Advanced Selective Dry Etching of GaAs/AlGaAs in High Density Inductively Coupled Plasmas,” J.W. Lee, M. Devre, B. Reelfs, D. Johnson, J. Sasserath, F. Clayton and S.J. Pearton, 46th Int. Symp. AVS, Seattle, Oct. 1999.

555. “Comparison of Plasma Chemistries for Dry Etching of Ta 2O5,” K.P. Lee, K.B. Jung, R.K. Singh, S.J. Pearton, C.C. Hobbs and P. Tobin, 46th Int. Symp. AVS, Seattle, Oct. 1999.

556. “Effects of UV Illumination on Dry Etch Rates of NiFe-Based Magnetic Multilayers,” H. Cho, K.P. Lee, K.B. Jung, Y.B. Hahn, S.J. Pearton and R.J. Shul, 46th Int. Symp. AVS, Seattle, Oct. 1999.

557. “High Breakdown Voltage (Au/Pt/GaN Schottky Diodes,” J.I. Chyi, J.M. Lee, C.C. Chuo, G.C. Chi, G. Dang, A.P. Zhang, X.A. Cao, MM. Mshewa, F. Ren, S.J. Pearton, S.N.G. Chu and R.G. Wilson, 46th Int. Symp. AVS, Seattle, Oct. 1999.

558. “ICP-Induced Etch Damage of GaN p-n Junctions,” R.J. Shul, A.G. Baca, L. Zhang, C.G. Willison, S.J. Pearton and F. Ren, 46th Int. Symp. AVS, Seattle, Oct. 1999.

559. “Schottky Diode Measurements of Dry Etch Damage in n- and p-type GaN,” X.A. Cao, Z.P. Zhang, G. Dang, F. Ren, S.J. Pearton, R.J. Shul and L. Zhang, 46th Int. Symp. AVS, Seattle, Oct. 1999.

560. “Process Development for Dry Etched Laser Facets on GaN.” L. Zhang, R.J. Shul, G.A. Vawter, C.G. Willison, C.Y. Cao, J. Han and S.J. Pearton, 46th Int. Symp. AVS, Seattle, Oct. 1999.

561. “Effect of N2 Discharge Treatment on AlGaN/GaN HEMT Ohmic Contact Using ICP,” A.P. Zhang, G. Dang, X.A. Cao, F. Ren, S.J. Pearton, J.M. Van Hove, P.P. Chow, R. Hickman and J.J. Klaassen, 46th Int. Symp. AVS, Seattle, Oct. 1999.

562. “GaN-Based Materials for Microelectronics,” S.J. Pearton, F. Ren, J. Han, J.I. Chyi, C.C. Chuo, J.M. Lee, G. Dang, A. Zhang, X. Cao, S.N.G. Chu, R.G. Wilson and J.M. Van Hove, 1999 Int. Semicond. Device Research Symp., Charlottesville, VA, Dec. 1999.

563. “Properties and Effects of Hydrogen in GaN,” S.J. Pearton, MRS Fall Meeting, Boston, Nov. 1999.

564. “Surface Conversion Effects in Plasma Damaged p-GaN,” X.A. Cao, S.J. Pearton, G.T. Dang, A. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, MRS Fall Meeting, Boston, Nov. 1999.

565. “Effect of Annealing and Co-Doping on the PL Intensity from Er-doped GaN,” M.E. Overberg, C.R. Abernathy, S.J. Pearton, J.M. Zavada and R.G. Wilson, MRS Fall Meeting, Boston, Nov. 1999.

566. “Cl2/Ar HDP Damage in GaN Schottky Diodes,” A.P. Zhang, G. Dang, F. Ren, X.A. Cao, H. Cho, E. Lambers, S.J. Pearton, R. Shul, L. Zhang, A.G. Baca, R. Hickman and J.M. Van Hove, MRS Fall Meeting, Boston, Nov. 1999.

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567. “Processing and Device Performance of GaN Power Rectifiers,” X.A. Cao, S.J. Pearton, G. Dang, A. Zhang, F. Ren, J. Han, J.I. Chyi, C.M. Lee, C.C. Chuo, G.C. Chi, S.N.G. Chu and R.G. Wilson, MRS Fall Meeting, Boston, Nov. 1999.

568. “Oxygen Implant Isolation of n-GaN FET Structures,” G. Dang, X.A. Cao, S.J. Pearton, J. Han, A.G. Baca and R.J. Shul, MRS Fall Meeting, Boston, Nov. 1999.

569. “Annealing of Ion Implantation Damage Studied by PL,” N. Langford, J.S. Williams, C. Jagadish and S.J. Pearton, MRS Fall Meeting, Boston, Nov. 1999.

570. “High Density Plasma Etching of Ta 2O5-Selectivity to Si and Effect of UV Light Enhancement,” K.P. Lee, h. Cho, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, MRS Fall Meeting, Boston, Nov. 1999.

571. “High Density Plasma Etching of (BaSr)TiO 3 and LaNiO 3,” K.P. Lee, K.B. Jung, A. Srivastava, D. Kumar, R.K. Singh and S.J. Pearton, MRS Fall Meeting, Boston, Nov. 1999.

572. “Ion Enhanced Dry Etching of Magnetic Multilayers: Post-Etch Cleaning and Effects of UV Illumination,” H. Cho, K. Lee, K.B. Jung, S.J. Pearton, F. Sharifi and J. Marburger, MRS Fall Meeting, Boston, Nov. 1999.

573. “Effect of C and H on the 1.54nm Emission from Er-doped III-Nitrides,” C.R. Abernathy, M. Overberg, J. MacKenzie, S.J. Pearton, R.G. Wilson and J.M. Zavada, Photonics West, San Jose, CA, Jan. 2000.

574. “A Unified Approach to Modelling of Etched Profiles in an ICP Etching System,” Y. Im, Y.B. Hahn and S.J. Pearton, 5th Intl. Workshop on Advanced Plasma Tools & Process Engineering, Santa Clara, CA, Feb. 2000.

575. “Temperature-Dependent Performance of GaN Schottky Rectifiers,” X. Cao, G. Dang, A. Zhang, F. Ren, S. Pearton, C.-M. Lee, C.-C. Chuo, J.I. Chyi, G.C. Chi, J. Han, S.N.G. Chu and S.J. Pearton, Intl. Conf. on SiC and Related Materials, Research Triangle Park, NC, Oct. 1999.

576. “Novel GaN-Based Electronic Devices for High Power Switching and High Temperature Applications,” X.A. Cao, G. Dang, A. Zhang, F. Ren, B. Gila, S.M. Donovan, C.R. Abernathy, S.J. Pearton, J. Han, R.J. Shul, L. Zhang, A.G. Baca, J. Van Hove, J. Klaassen, C. Polley, A. Wowchack, P. Chow, D. King, R.G. Wilson, J.M. lee, C.C. Chuo, J.-I. Chyi, G.C. Chi, M. Hong and S.N.G. Chu, III-V Nitride Materials and Devices, 196th ECS Meeting, Hawaii, Oct. 1999.

577. “Corrosion-Free Dry Etch Patterning of MRAM Stacks – Effects of UV Enhancement,” H. Cho, K.-P. Lee, K.B. Jung, S.J. Pearton, J. Marburger, F. Sharifi and J.R. Childress, 44th Ann. Conf. Magnetism and Magnetic Materials, San Jose, CA, Nov. 1999.

578. “Dry etching of MRAM Structures,” S.J. Pearton, H. Cho, K.B. Jung, J.R. Childress, F. Sharifi and J. Marburger,” 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

579. “GaN Power Rectifiers,” X.A. Cao, G. Dang, A. Zhang, F. Ren, S.J. Pearton, J. Han, J.I. Chyi and C.C. Chuo, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

580. “MBE Growth of GaN HBTs and BJTs,” J.M. Van Hove, J. Klaassen, A. Wowchack, D.J. King, D. Chow, X. Cao, C.R. Abernathy, S.J. Pearton, F. Ren, G. Dang and A. Zhang. 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

581. “GaN pnp BJT Operated to 250oC,” A. Zhang, G. Dang, F. Ren, J. Han, C. Monier, A.G. Baca, X. Cao, H. Cho, C.R. Abernathy and S.J. Pearton, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

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582. “Current Gain Simulation of AlGaN/GaN npn HBTs,” C. Monier, S.J. Pearton, A.G. Baca, P.C. Chang, L. Zhang, J. Han, R.J. Shul, F. Ren and J. LaRoche, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

583. “Single Crystal Growth of GaN Substrates Using High Pressure, High Temperature Process,” R.K. Singh, D. Gilbert, F. Kelly, R. Chodelka, R. Abbaschian, S.J. Pearton and A. Novikov, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

584. “p-GaAs Base Regrowth for GaN HBTs and BJTs,” G. Dang, A. Zhang, X.A. Cao, F. Ren, S.J. Pearton, H. Cho, J. Van Hove, J. Klaassen, P. Chow, D. King, W.S. Hobson and Lopata, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

585. “Device Processing for GaN High Power Electronics,” S.J. Pearton, X. Cao, H. Cho, C. Monier, F. Ren, G. Dang, A. Zhang, R.J. Shul, A.G. Baca, J. Han, J.I. Chyi, J.M. Van Hove, C.R. Abernathy and B. Gila, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

586. “ICP High Density Plasma-Induced Etch Damage of GaN MESFETs,” R.J. Shul, L. Zhang, A.G. Baca, C. Willison, J. Han, S.J. Pearton and F. Ren, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

587. “Surface Disordering and Nitrogen Loss in GaN Under Ion Bombardment,” J.S. Williams, S. Kucheyev, H. Tan, C. Jagadish, M. Toth, M.R. Phillips, G. Li and S.J. Pearton, 2000 Spring MRS Meeting, San Francisco, CA, April 2000.

588. “High Resistance Implant Isolation in n- and p-GaN,” X. Cao, S.J. Pearton, G. Dang, A.P. Zhang, F. Ren, R.G. Wilson and J.M. Van Hove, Am. Phys. Soc. Meeting, Minneapolis, March 2000.

589. “AlGaN/GaN HBTs: Limiting Factors and Optimum Design fo r High Frequency Performances,” C. Monier, A.G. Baca, S.J. Pearton, F. Ren, P. Chang, L. Zhang, J. LaRoche, J. Han and R.J. Shul, 197th Meeting of the ECS, Toronto, May 2000.; ECS Proc. Vol. 2000-1, 34 (2000).

590. “Low DiT Dielectric/GaN MOS Systems,” M. Hong, H. Ng, J. Kwo, A. Korkan, J. Baillargeon, S. Chu., J. Mannaerts, A.Y. Cho, F. Ren, C. Abernathy, S.J. Pearton and J.I. Chyi, 197th Meeting of the ECS, Toronto, May 2000.

591. “First Demonstration of the AlGaAs/InGaAsN/GaAs pnp Double Heterojunction Bipolar Transistor,” F.C. Chang, N.Y. Li, J. LaRoche, C. Monier, H.G. Baca, H.Q. Hou, F. Ren and S.J. Pearton, 58th DRC Conference, Denver, June 2000.

592. “GaN High Power Electronics”, S.J. Pearton, F. Ren, A. Zhang, G. Dang, X. Cao, H. Cho, B. Gila, C. Monier, C.R. Abernathy, J. Han, A.C. Baca, J.I. Chyi, G.C. Chi and S.N.G. Chu, European MRS Spring Meeting, Strasbourg, France, June 2000.

593. “Effect of Impurity Concentration on 1.54µm emission from GaN: ER,” C.R. Abernathy, M. Overberg, S.J. Pearton, R.G. Wilson and J.M. Zavada, European MRS Spring meeting, Strasbourg, France, June 2000.

594. “Recent Development of Advanced InP Etching in an Inductively Coupled High Density Plasma,” D. Malpass, B. Reelfs, M. Devre, D. Johnson, J.W. Lee, J.N. Sasserath and S.J. Pearton, InP and Related Compounds 2000, Williamsburg, VA, May 2000.

595. “III-V MOSFETs using Ga2O3/Gd2O3 as the Gate Oxide,” F. Ren, M. Hong, Y. Wang, J. Kwo, P. Mannaerts, C.R. Abernathy and S.J. Pearton, Topical Workshop on Heterostructure Electronics, Tokyo, Japan, August 2000.

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596. “Insulator/GaN Heterostructures of Low Interfacial Density of States,” M. Hong, H. Ng, H. Kwo, A. Kortran, A.Y. Cho, F. Ren, J.-I. Chyi, C.R. Abernathy and S.J. Pearton, Spring MRS, San Francisco, April 2000.

597. “GaN Power Devices,” S.J. Pearton, F. Ren and C.R. Abernathy, 198th Meeting of ECS, Phoenix, October 2000 ECS Proc. Vol. 2000-18, 19 (2000).

598. “RF Characteristics of Al-free pnp InGaAsN HBTs,” P.C. Chang, N. Li, A.G. Baca, C. Monier, J. LaRoche, H. Han, F. Ren and S.J. Pearton, 198th Meeting of ECS, Phoenix, October 2000; ECS Proc. Vol. 2000-18, 192 (2000).

599. “SiO2/Gd2O3/GaN MOSFETs,” J.W. Johnson, B. Gila, B. Luo, K.P. Lee, C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.J. Anderson and F. Ren, 198th Meeting of ECS, Phoenix, October 2000.

600. “The Effect of N2 Plasma Damage on dc and rf Characteristics of HEMTs,” B. Luo, V. Trivedi, F. Ren, C. Hsu, S.J. Pearton, C.R. Abernathy, X.A. Cao, C.S. Wu, M. Hopje, J. Sasserath and J.W. Lee, 198th Meeting of ECS, Phoenix, October 2000.

601. “GaN MOSFETs,” C.R. Abernathy, B.P. Gila, J.W. Johnson, F. Ren and S.J. Pearton, 17th Biennial IEEE/Cornell Univ. Conf. Advanced Concepts in High Performance Devices.

602. “Growth and Characterization of Gd 2O3 Gate Dielectric on GaN,” B. Gila, K. Lee, K. Harris, W. Johnson, V. Krishnamoorthy, C.R. Abernathy, F. Ren and S.J. Pearton, 47th Intl. AVS Symp., Boston, October 2000.

603. “GaN and AlGaN Power Rectifiers,” A. Zhang, G. Dang, F. Ren, X. Cao, K. Lee, S.J. Pearton, J. Han, J.I. Chyi, C.M. Lee and C.C. Chuo, 47th Intl. AVS Symp, Boston, October 2000.

604. “Effect of Annealing and Carbon Concentration on the PL Intensity from GaN: Er and GaN: Eu,” M. Overberg, C.R. Abernathy, S.J. Pearton and J.M. Zavada, 47th Intl. AVS Symp., Boston, October 2000.

605. “Process Development for Small-Area GaN/AlGaN HBTs,” K.P. Lee, G. Dang, A. Zhang, F. Ren, J. Han, W.S. Hobson, C.R. Abernathy, S.J. Pearton and J.W. Lee, 47th Intl. AVS Symp., Boston, October 2000.

606. “Comparison of Wet and Dry Etch Processes for SiO 2/TiO 2 Distributed Bragg Reflectors of VCSELs,” G. Dang, H. Cho, K. Lee, S.J. Pearton, S.N.G. Chu, J. Lopata, W.S. Hobson and F. Ren, 47th Intl. AVS Symp., Boston, October 2000.

607. “High Density Plasma Via Hole Etching in SiC,” H. Cho, K.P. Lee, P. Leerungnawarat, S.N.G. Chu, F. Ren, C.M. Zetterling and S.J. Pearton, 47th Intl. AVS Symp., Boston, October 2000.

608. “Fabrication Approaches for AlInAs/InGaAs High Electron Mobility Spin FETs,” J. LaRoche, F. Ren, Q. Hudspeth, A.F. Hebard, S. Arnason, J.M. Kuo, Y.D. Park, D. Temple, S.J. Pearton and A.G. Baca, Fall MRS Meeting, Boston, December 2000.

609. “Comparison of Plasma Chemistries for Deep Etching of SiC,” K.P. Lee, P. Leerungnawarat, S.J. Pearton, F. Ren, S.N.G. Chu and C.M. Zetterling, Fall MRS Meeting, Boston, December 2000.

610. “Self-Aligned Process for GaN/AlGaN HBTs,” K.P. Lee, A.P. Zhang, F. Ren, J. Han, W.S. Hobson, J. Lopata, C.R. Abernathy, S.J. Pearton and J.W. Lee, Fall MRS Meeting, Boston, December 2000.

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611. “Effect of N2 Plasma Treatment on Dry Etch Damage in n- and p-type GaN,” D.G. Kent, K.P. Lee, M.E. Overberg, C.R. Abernathy, F. Ren, A.P. Zhang and F. Ren, Fall MRS Meeting, Boston, December 2000.

612. “Surface Preparation and Oxide Growth for GaN MOSFETs,” B.P. Gila, J.W. Johnson, K.N. Lee, V. Krishnamoorthy, C.R. Abernathy, F. Ren and S.J. Pearton, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS Vol. 219, 71 (2001).

613. “High Performance Small Area Contact GaN/AlGaN HBTs,” K.P. Lee, A.P. Zhang, F. Ren, J. Han, W.S. Hobson and S.J. Pearton, Spring ECS Meeting, Washington, DC, March 2001; ECS Proc. 219, 161 (2001).

614. “High Breakdown Voltage Planar GaN and AlGaN Schottky Rectifiers,” A.P. Zhang, J.W. Johnson, F. Ren, K.P. Lee, S.J. Pearton and J. Han, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 167 (2001).

615. “p-ohmic Contact Study for Intra-Cavity Contacts on AlGaAs/GaAs VCSELs,” B. Luo, G. Dang, A.P. Zhang, F. Ren, J. Lopata, S.N.G. Chu, W.S. Hobson and S.J. Pearton, Spring ECS Meeting, Washington DC, March 2001; Proc. ECS 219, 232 (2001).

616. “Performance of Intra-Cavity Contact, Shallow Implant Apertured VCSELs,” W.S. Hobson, J. Lopata, L. Chirovsky, S.N. G. Chu, G. Dang, F. Ren, M. Tayaki and S.J. Pearton, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 265 (2001).

617. “Design Investigation of InGaAsN-based pnp HBTs,” C. Monier, P. Chang, A.G. Baca, N. Li, J. LaRoche, H. Han, F. Ren and S.J. Pearton, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 293 (2001).

618. “Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs,” A.G. Baca, C. Monier, D. Chang, M. Armendariz, R. Briggs and S.J. Pearton, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 300 (2001).

619. “Effect of N2 on Ar Plasma Exposure on GaAs/AlGaAs HBTs,” C. Hsu, C. Chen, B. Luo, F. Ren, S.J. Pearton, C.R. Abernathy, J. Lee, K. Mackenzie and J. Sasserath, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 300 (2001).

620. “Study of Radiation-Induced Resistance Mechanisms in GaAs MESFET and TLM Structures,” B. Luo, D. Schoenfeld, J.W. Johnson, S.J. Pearton and F. Ren, Spring ECS Meeting, Washington, DC, March 2001; Proc. ECS 219, 250 (2001).

621. “RF Characteristics of GaAs/InGaAsN/GaAs pnp Double HBTs,” A.G. Baca, P. Chang, N. Li, Q. Hou, C. Monier, J. LaRoche, F. Ren and S.J. Pearton, IEEE GaAs IC Symp. Tech. Dig., Seattle (2000), p. 63.

622. “Design Optimization of InGaAsN-based pnp HBTs for Low Power Applications,” C. Monier, P. Chang, A.G. Baca and S.J. Pearton, ISTC 2001 Meeting of the ECS, Shanghai, China, May 2001.

623. “Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP,” M.E. Overberg, C.R. Abernathy, S.J. Pearton, A.F. Hebard, N. Theodoropoulou, S. von Molnar, P. Xiong and M. Anane, 2001 Spring MRS Meeting, San Francisco, April 2001.

624. “Ferromagnetic and Structural Porperties of Mn-implanted p-GaN,” N. Theodoropoulou, A.F. Hebard, S.J. Pearton, C.R. Abernathy, S.N.G. Chu, K.P. Lee, R.G. Wilson, A.G. Rinzler and W. Gebicki, 2001 Spring MRS Meeting San Francisco, April 2001.

625. “Effect of Be-O and Mg-O Co-Implantation in GaN,” D.G. Kent, S.J. Pearton, B.P. Gila, M.E. Overberg and C.R. Abernathy, 2001 Spring MRS Meeting San Francisco, April 2001.

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626. “GdGaOx Gate Dielectric for Compound Semiconductor MOSFETs,” B.P. Gila, K.N. Lee, C.R. Abernathy, S.J. Pearton, F. Ren and J.W. Johnson, 2001 Spring MRS Meeting San Francisco, April 2001.

627. “GaN and AlGaN Power Rectifiers on Sapphire and Bulk GaN Substrates,” J. Johnson, A. Zhang, G. Dang, F. Ren, S.S. Park, K.Y. Lee, J. Han, A. Polyakov, A. Govorkov, N. Smirnov, J.M. Redwing, K.P. Lee and S.J. Pearton, 2001 Spring MRS Meeting San Francisco, April 2001.

628. “Temperature-Dependent Performance of Self-Aligned GaN/AlGaN HBTs,” K.P. Lee, A. Zhang, F. Ren, S.J. Pearton, J. Han, W.S. Hobson, J. Lopata and C.R. Abernathy, 2001 Spring MRS Meeting San Francisco, April 2001.

629. “Development of Endpoint Detection Techniques with Optical Emission Spectroscopy for Etching of AlGaAs/GaAs in ICP N2 Plasmas,” J. Lee, Y. Son, H. Choi, C. Cho, J. Johnson, J. Sasserath, S.J. Pearton and K.P. Lee, Korean Vacuum Soc. Meeting, Seoul, Feb. 22-23, 2001.

630. “High Pressure Annealing of GaN Films Frown on Sapphire,” F. Kelly, R. Chodelka, S.J. Pearton, M.E. Overberg, A. Novjkov, R. Singh and R. Abbaschian, 2001 Spring MRS Meeting San Francisco, April 2001.

631. “Growth of the Dilute Magnetic Semiconductor (Ga,Mn)P by Gas-Source MBE,” M.E. Overberg, C.R. Abernathy, S.J. Pearton, F. Sharifi, A. Hebard, N. Theodoropoulou, S. von Molnar, M. Anane and P. Xiong, 43rd EMC Conf., Notre Dame, IN, June 2001.

632. “Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for Wide Bandgap MOSFETs,” B.P. Gila, A. Onstine, K. Allum, V. Krishnamoorthy, S. Bates, C.R. Abernathy, S.J. Pearton, J.W. Johnson, R. Mehandru and F. Ren, 4th Intl. Conf. On Nitride Semiconductors, Denver, July 2001.

633. “Magnetic Properties of Mn- and Fe-Implanted p-GaN,” N. Theodoropoulou, M. Overberg, S.N.G. Chu, A.F. Hebard, C.R. Abernathy, R.G. Wilson, J.M. Zavada, K.P. Lee and S.J. Pearton, 4th Intl. Cong. Nitride Semiconductors, Denver, July 2001.

634. “Dilute Magnetic Semiconductors Based Upon GaP”, M. Overberg, C.R. Abernathy, S.J. Pearton, N. Theodoropoulou, A.F. Hebard, S.N.G. Chu and R.G. Wilson, AVS 48th Int. Symp., San Francisco, October 2001.

635. “Epitaxial Growth of GaMnN,” G.T. Thaler, M.E. Overberg, C.R. Abernathy, S.J. Pearton, N. Theodoropoulou and A.F. Hebard, AVS 48th Int. Symp., San Francisco, October 2001.

636. “Characterization of High Dose Mn, Fe and Ni Implantation into p-GaN,” S.J. Pearton, N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, R.G. Wilson and J.M. Zavada, AVS 48th Int. Symp., San Francisco, October 2001.

637. “Magnetic and Structural Properties of Fe- and Mn-Implanted SiC,” N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, AVS 48th Int. Symp., San Francisco, October 2001.

638. “Effects of H2, D2, N2 and Ar Plasma on III-V Compound Semiconductor Devices,” B. Lou, K. Ip, F. Ren, K.P. Lee, S.J. Pearton, C.R. Abernathy, R.J. Shul, S.N.G. Chu, C.W. Tu, C.S. Wu, K.D. MacKenzie and C.H. Hsu, AVS 48th Int. Symp., San Francisco, October 2001.

639. “Fabrication and Characterization of GaMnP,” M.E. Overberg, N. Theodoropoulou, S. Arnason, B. Gila, K.T. McCarthy, C.R. Abernathy, S.J. Pearton, A. Hebard and R.G. Wilson, MRS Fall Meeting, Boston, November 2001.

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640. “Implantation of Mn, Fe and Ni into GaN, SiC and GaP for Creation of Dilute Magnetic Semiconductors,” S.J. Pearton, N. Theodoropoulou, M. Overberg, S.N.G. Chu, A. Hebard, C.R. Abernathy, R.G. Wilson and J.M. Zavada, MRS Fall Meeting, Boston, November 2001.

641. “Implantation-produced Lattice Damage in III-Nitrides,” S. Kudeyer, J.S. Williams, C. Jagadish, J. Zou, G. Li, S.J. Pearton, M. Manasreh and Y. Nakagawa, MRS Fall Meeting, Boston, November 2001.

642. “Studies of Electronic States in Modulation-Doped p-AlGaN/GaN Superlattices,” A. Polyakov, N. Smirnov, A. Govorkov, R. Noriss, A. Osinsky and S.J. Pearton, MRS Fall Meeting, Boston, November 2001.

643. “Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments,” J. Kim, B. Lou, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A. Polyakov, N. Smirnov and A.V. Osinsky, MRS Fall Meeting, Boston, November 2001.

644. “Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes,” B. Lou, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A. Polyakov, N. Smirnov and A. Govorkov, MRS Fall Meeting, Boston, November 2001.

645. “Electrical Characterization of MgO/GaN as a MOS Structure,” J. Kim, R. Mehandru, J. Johnson, B. Lou, F. Ren, B. Gila, K.P. lee, A. Onstine, C.R. Abernathy, S.J. Pearton and J. Shin, MRS Fall Meeting, Boston, November 2001.

646. ”Stability of GaN MOS Diodes,” K Allums, B. Gila, B. Lou, R. Mehandru, R. Dwivedi, R. Wilkias, F. Ren and S.J. Pearton, MRS Fall Meeting, Boston, November 2001.

647. “Direct Comparison of AlGaN/GaN HEMTs Grown on Sapphire and AlN/SiC Substrates,” J. Johnson, B. Lou, F. Ren, S.J. Pearton, J. Han, S.N.G. Chu, A.G. Baca, A.D. Briggs, R.J. Shul, D. Tsvefkov and V. Dmitriev, MRS Fall Meeting, Boston, November 2001.

648. “Electrical Characterization of Sc2O3/GaN as MOS Structures,” R. Mehandru, B. Gila, J. Kim, J. Johnson, J. Shin, B. Lou, A. Onstine, K. Allums, C.R. Abernathy, S.J. Pearton and F. Ren, MRS Fall Meeting, Boston, November 2001.

649. “Epitaxial Growth and Properties of CeO2 on (001)InP,” M. Ivill, D.P. Norton, M. Patel, H. Bae and S.J. Pearton, MRS Fall Meeting, Boston, November 2001.

650. “New Directions in GaN-Based Devices: High Voltage Rectifiers and Spin-Dependent Structures,” S.J. Pearton, C.R. Abernathy, M. Overberg, G. Thaler, F. Ren, B. Luo, J. Johnson, N. Theodoropoulou, A.F. Hebard and Y.D. Park, Frontier Science Research Conf. On Science and Technology of Nitride Materials, November 2001, La Jolla, CA.

651. “Optical Characterization of Etch Damage in GaN Produced by ICP and ECR Plasmas,” D. Gaskill, O.J. Glembocki, V. Shamanian, ZD. Koleske, R. Henry and S.J. Pearton, 54th Ann. Gaseous Electronics Conf., October 2001, State College, PA.

652. “Use of Implantation to Facilitate the Discovery and Characterization of Novel Ferromagnetic Semiconductors,” N. Theodoropoulou, A. Hebard, M.E. Overberg, S.J. Pearton, C.R. Abernathy, S.N.G. Chu and R.G. Wilson, 46th Ann. Conf. Magn. Mag. Mater., Seattle, November 2001.

653. “GaN-Based Electronic Devices for High Frequency, High Temperature and High Power,” J. Johnson, B. Luo, B. Gila, A. Zhang, R. Mehandru, A.G. Baca, S.J. Pearton, C.R. Abernathy and F. Ren, Int. Union of Radio Science National Radio Science Meeting, Boulder, CO, January 2002.

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654. “Advanced Processing of Group III-Nitrides,” S.J. Pearton, F. Ren, B. Gila and C.R. Abernathy, Photonics West, San Jose, CA, January 2002.

655. “Unconventional Carrier-Mediated Ferromagnetism Above Room Temperature in Ion-Implanted (Ga,Mn)P: C,” N. Theodoropoulou, A.F. Hebard, M.E. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu and R.G. Wilson, APS March Meeting, Indianapolis, IN, March 2002.

656. “GaN-Based Electronics and Their Applications,” F. Ren, J.W. Johnson, S.J. Pearton, A.P. Zhang, B. Gila and C.R. Abernathy, APS March Meeting, Indianapolis, IN, March 2002.

657. “Processing of GaN Electronic and Photonic Devices,” S.J. Pearton, K.P. Lee, K.H. Baik, B.P. Gila, C.R. Abernathy, B. Luo and F. Ren, Florida Chapter of AVS, Orlando, FL, March 2002.

658. “Fabrication and Characteristics of High-Speed, Implant-Confined Index-Guided, Lateral Current-Injected 850 nm VCSELs,” F. Ren, G. Dang, B. Luo, R. Mehandru, K. Ip, S.J. Pearton, W.S. Hobson, J. Lopata, M. Tayahi, S.N.G. Chu, W. Chang and H. Shen, 201st ECS Symposium, Philadelphia, May 2002.

659. “Growth and Characterization of GaMnN Dilute Magnetic Semiconductors,” G. Thaler, M. Overberg, C.R. Abernathy, S.J. Pearton, J. Kim, F. Ren, Y.D. Park, J.S. Lee, N. Theodoropoulou and A.F. Hebard, 201st ECS Symposium, Philadelphia, May 2002.

660. “GaN and SIC Power Rectifiers,” J. Kim, J.W. Johnson, S Nigan, B. Luo, F. Ren, S.J. Pearton, J. Chyi, S.S. Park, Z. Chung and J. Williams, 201st ECS Symposium, Philadelphia, May 2002.

661. “III-N Based DMS for Spintronics Applications,” Y.D. Park, J.S. Lee, S.Y. Lee, Z.G. King, E. Oh, G. Thaler, M. Overberg, C.R. Abernathy, S.J. Pearton and J.H. Kim, 201st ECS Symposium, Philadelphia, May 2002.

662. “Effect of Proton Irradiation on dc and rf Performance of AlGaN/GaN HEMTs,” B. Luo, K. Allums, J.W. Johnson, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T. Fogarty, R. Wilkins, A.G. Baca, R.J. Shul, J. Han and F. Ren, 201st ECS Symposium, Philadelphia, May 2002.

663. “Room Temperature Ferromagnetism in GaMnN and GaMnP,” S.J. Pearton, M. Overberg, G. Thaler, C.R. Abernathy, J. Kim, F. Ren, N. Theodoropoulou, A.F. Hebard and Y.D. Park, EXMATEC 2002, Budapest, Hungary, May 2002.

664. “Finite Difference Analysis of Thermal Characteristics of CW 850 nm Lateral Current Injection and Implant-Apertured VCSEL with Flip-Chip Bond Design,” R. Mehandru, G. Dang, B. Luo, S. Kim, F. Ren, S.J. Pearton, W.S. Hobson, J. Lopata, H. Shen and W. Chang, EEEO/QELS 2002, Long Beach, CA, may 2002.

665. “Growth and Characterization of MgO Gate Dielectric on GaN,” A. Onstine, B. Gila, J. Kim, C. R. Abernathy, F. Ren and S.J. Pearton, Florida Chapter of AVS, Orlando, FL, March 2002.

666. “Growth and Characterization of Magnesium Oxide Gate Dielectrics on GaN,” B. Gila, J. Kim, A. Onstine, K. Siebein, C.R. Abernathy, F. Ren and S.J. Pearton, EMC, Santa Barbara, June 2002.

667. “High Energy Proton Irradiation of MgO/GaN MOS Diodes,” J. Kim, B. Gila, R. Mehandru, B. Luo, A. Onstine, F. Ren, C.R. Abernathy, R. Dwidevi, K. Allums, T. Fogarty, R. Wilkins, Y. Irokawa and S.J. Pearton, EMC, Santa Barbara, CA, June 2002.

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668. “Elimination of Current Collapse of AlGaN/GaN HEMTs with MgO and Sc2O3,” B. Luo, B. Gila, J. Johnson, A. Onstine, C.R. Abernathy, F. Ren, S.J. Pearton, A.G. Baca, R.J. Shul, A. Dhahran, A. Wowchack and P. Chow, EMC, Santa Barbara, CA, June 2002.

The following were invited talks: Numbers 5,8,11,13,18,20,22,41,65,66,68,73,75,78,85,90,91,94, 95,96,99,103,114,118,125,128,130,132,137,149,151,154,174,180,181,182,183,191,199,200,202, 204,210,213,220,222,223,230,231,232,247,248,256,260,261,262,263,264,315,316,317,318,319, 320,331,332,333,336,338,342,343,344,345,346,347,348,363,364,365,367,371,372,376,377,383, 386,390,391,406,409,410,417,418,419,435,438,449,460,461,463,470,474,479,480,487,500,513, 514,515,528,529,531,532,537,540,547,548,549,553,562,563,573,576,578,580,585,589,590,592, 593,595,596,597,598,601,612,616,617,618,619,650,653,654,656,657,658,661,663

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Australian Atomic Energy Commission E Reports 1. "Transient Capacitance Measurements of Deep Level Defects Introduced by Long-Term,

Room Temperature Annealing in γ-Ray Compensated Ge," S.J. Pearton, Williams and Tavendale, AAEC/E501 (1980).

2. "Deep Level Transient Spectroscopy of γ-Ray Induced Defects in Ge," S.J. Pearton, Tavendale and Williams, AAEC/E502 (1980).

3. "Deep Level Transient Spectroscopy of n-GaAS Surface Barrier Diodes for Nuclear Radiation Detection," S.J. Pearton, Alexiev, Tavendale and Williams, AAEC/E503 (1980).

4. "Transient Conductance Spectroscopy Measurements of Defect States in γ-Dosimeter Application," S.J. Pearton, Tavendale and Williams, AAEC/E504 (1980).

5. "Neutralization of Point Defects in Ge and GaAs by Hydrogen Incorporation," S.J. Pearton, AAEC/E521 (1981).

6. "The Nature of the Ev + 0.23 eV and Ev + 0.38 eV γ-Induced Centres in Ge," S.J. Pearton and Tavendale, AAEC/544 (1982).

7. "Hydrogenation of Deep Level, Hole Trapping Centers Associated with Grain Boundaries in Ge," A.J. Tavendale and S.J. Pearton, AAEC/564 (1983).

Publications

1. "Deep Level Defects in Semiconductors for Nuclear Radiation Detection," S.J. Pearton,

Ph.D. Thesis. 2. "Deep Trapping Centres in n-GaAs Surface Barrier Diodes for Nuclear Radiation

Detection," S.J. Pearton, Tavendale and Williams, Electronics Letters 16, No. 12, 483 (1980).

3. "Magnetic Field Dependence of Defect States in GaAs," S.J. Pearton, Phys. Stat. Solidi. B 105, No. 1., K19 (1981).

4. "Ultra-Thin Laser Aided Doped Li Contacts on HP Ge Nuclear Radiation Detectors," S.J. Pearton and Williams, Nucl. Instr. and Methods 188, 261 (1981).

5. "The Use of Laser-Aided Doped Li Contacts on Semiconductor Nuclear Radiation Detectors," S.J. Pearton, Nucl. Instr. and Methods 189, 589 (1981).

6. "Laser Assisted Doping of n-GaAs from Sn Evaporated Films," S.J. Pearton and Lawson, Phys. Stat. Solidi A 68, K63 (1981).

7. "Use of Thermal Annealing for Radiation Hardening of Germanium to γ-Rays," S.J. Pearton, Rad. Effects Lett. 67, No. 3, 63 (1981).

8. "New γ-Radiation Damage Centres Observed in Ge by DLTS," S.J. Pearton, Tavendale and Williams, Rad. Effects 60, 129 (1982).

9. "Thermal and Electrical Stability of γ-Ray Induced Defects in Ge," S.J. Pearton, Rad. Effects 26, 135 (1982).

10. "Hydrogen Passivation of Copper Related Defects in Ge," S.J. Pearton, Appl. Phys. Lett. 40, No. 3, 253 (1982).

11. "Hydrogen Passivation of a Bulk Donor Defect (Ec-0.36 eV) in GaAs," S.J. Pearton, J. Appl. Phys. 53, No. 6, 4509 (1982).

12. "Deep Metal Related Centres in Ge," S.J. Pearton, Solid St. Electron. 25, No. 4, 305

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(1982). 13. "A Study of Deep Metal-Related Centres in Ge by Capacitance Spectroscopy," S.J.

Pearton, Solid St. Electron. 25, No. 6, 499 (1982). 14. "Energy Levels of Some Rare Earth Related Impurities in Ge," Phys. Stat. Solidi B 109,

No. 2, K135 (1982). 15. "The Electronic States of Some Metal Impurities in Ge.," S.J. Pearton, Aust. J. Phys. 35,

53 (1982). 16. "Capacitance Spectroscopy Measurements of Deep Defect States in Semiconductors,"

S.J. Pearton, J.E.E.E. (Aust.) 2, No. 3, 165 (1982). 17. "The Mobility of Copper Centres in Reverse Biased Ge n+ p Diodes," S.J. Pearton and

Tavendale, Appl. Phys. Lett. 41, No. 2, 176 (1982). 18. "Reduction in γ-Ray Damage in Hydrogenated Ge," S.J. Pearton and Tavendale, Rad.

Effects Lett. 68, 15 (1982). 19. "Reduction in γ-Ray Damage in Hydrogenated Si," S.J. Pearton and Tavendale, Rad.

Effects Lett. 68, 25 (1982). 20. "The Mobility of γ-Ray Induced Defects in Reverse Biased Ge n+ p Diodes," S.J. Pearton

and Tavendale, Rad. Effects Lett. 68, 11 (1982). 21. "Hydrogen Passivation of Laser Induced Defects in Ge," S.J. Pearton and Tavendale, J.

Appl. Phys. 54, No. 1, 440 (1983). 22. "Hydrogen Passivation of γ-Induced Point Defects in Si," S.J. Pearton, Phys. Stat. Solidi

A 72, K73 (1982). 23. "Hydrogen Passivation of Laser Induced Acceptor Defects in p-Type Si," Lawson and

S.J. Pearton, Phys. Stat. Solidi A 72, No. 2, K155 (1982). 24. "Hydrogen Passivation of a Ni Related Defect in Ge," A.J. Tavendale and S.J. Pearton, J.

Appl. Phys. 54, No. 2, 1156 (1983). 25. "The Mobility of a Ni Related Centre in Reverse Biased Ge n+ p Diodes," S.J. Pearton

and Tavendale, Solid State Electron 26, 1019 (1983). 26. "Hydrogen Passivation of Grain Boundaries in Polycrystalline GaAs," S.J. Pearton and

Tavendale, J. Appl. Phys. 54, No. 2, 1154 (1983). 27. "Deep Defect States in Quenched, γ-Irradiated Ge," A.J. Tavendale and S.J. Pearton, Rad.

Effects 69, 36 (1983). 28. "The Electrical Properties of Deep Cu and Ni-Related Centers in Si," S.J. Pearton and

Tavendale, J. Appl. Phys. 54, No. 3, 1375 (1983). 29. "Hydrogen Passivation of Gold-Related Deep Levels in Si," S.J. Pearton and Tavendale,

Phys. Rev. B 26, No. 12, 7105 (1982). 30. "Electrical Properties of Deep Ag- and Fe-Related Cent res in Si," S.J. Pearton and

Tavendale, J. Phys. C. 17, 6701 (1984). 31. "The Mobility of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier

Diodes," S.J. Pearton and Tavendale, Phys. Stat. Solidi A 73, No. 1, K75 (1982). 32. "Hydrogen Passivation of Deep Donor Centres in High Purity Epitaxial GaAs," S.J.

Pearton and Tavendale, Phys. Stat. Solidi A 73, No. 1, 715 (1982). 33. "Deep Level, Quenched- in Defects in Si Doped with Au, Ag, Fe, Cu or Ni," A.J.

Tavendale and S.J. Pearton, J. Phys. C 16, A, 1665 (1983). 34. "Deep Levels in γ-Irradiated Ge Doped with Pb or Sn," A.J. Tavendale and S.J. Pearton,

Rad. Effects Lett. 68, 35 (1982).

49

35. "Hydrogen Passivation of Ar Sputter-Etch Induced Electrically Active Damage on Ge, Si and GaAs," S.J. Pearton, Tavendale and Lawson, Rad. Effects 79, 21 (1983).

36. "Deep Level Impurities in Semiconductors for Nuclear Radiation Detection," S.J. Pearton, Atomic Energy in Australia 25, No. 1, 7 (1982).

37. "Motion of Deep Gold-Related Centers in Reverse Diased Si Junction Diodes at Room Temperature," S.J. Pearton and Tavendale, Appl. Phys. Lett. 41, No. 12 (1982).

38. "Hydrogen Passivation of Deep Metal-Related Donor Centers in Ge," S.J. Pearton and Tavendale, J. Appl. Phys. 54, No. 2, 820 (1983).

39. "Field Drift and Hydrogenation of Deep Level Defects Associated with 1-MeV Ion-Implanted Oxygen in Germanium Diodes," A.J. Tavendale and S.J. Pearton, J. Appl. Phys. 54, No. 6, 3213 (1983).

40. "Palladium and Platinum-Related Centers in Silicon: Effect of a Hydrogen Plasma," S.J. Pearton and E.E. Haller, J. Appl. Phys. 54, No. 6, 3613 (1983).

41. "Dislocations in Germanium: Effects of Plasma Hydrogenation," S.J. Pearton and J.M. Kahn, Phys. Stat. Solidi A 78, K65 (1983). LBL-15919.

42. "Deep Level Effects in Silicon and Germanium after Plasma Hydrogenation," S.J. Pearton, J.M. Kahn and E.E. Haller, J. Electron Matls. 12, 1003 (1983). LBL-15920.

43. "The Nature of the Dominant γ-Induced Defects in High-Purity Germanium," S.J. Pearton, A.J. Tavendale, J.M. Kahn and E.E. Haller, Rad. Effects 81, 293 (1984). LBL-15921.

44. "Deuterium in Germanium: Interaction with Point Defects," S.J. Pearton, J.M. Kahn, W.L. Hansen and E.E. Haller, J. Appl. Phys. 55, No. 1 (1984). LBL-15944.

45. "Quenched- in Deep Acceptors in Germanium," S.J. Pearton, E.E. Haller and J.M. Kahn, J. Phys. C 17, 2375 (1984). LBL-16198.

46. "Annealing Characteristics of Neutron-Transmutation-Doped Germanium," N.P. Palaio, S.J. Pearton and E.E. Haller, J. Appl. Phys. 55, 437 (1984).

47. "Bulk Acceptor Compensation Produced in P-Type Silicon at Near-Ambient Temperatures by and H2O Plasma," W.L. Hansen, S.J. Pearton and E.E. Haller, Appl. Phys. Lett. 44, 606 (1984). LBL-16688.

48. "Grain Boundaries in Ge: Effects of Various Gas Species," K.S. Jones and S.J. Pearton, Physica Status Solidi A 82, K101 (1984).

49. "Hydrogenation of Bulk Electron Traps in LEC GaAs and GaP," S.J. Pearton and A.G. Elliot, Electron. Lett. 19, 1052 (1983).

50. "Hydrogenation of Au-Related Levels in Si by Electrolytic Doping," S.J. Pearton, W.L. Hansen, E.E. Haller and J.M. Kahn, J. Appl. Phys. 55, 1221 (1984).

51. "Low Temperature Oxygen Diffusion in Silicon," W.L. Hansen, S.J. Pearton and E.E. Haller, Appl. Phys. Lett. 44, 889 (1984). LBL-16961.

52. "Nitridization of GaAs Surfaces: Effects on Diode Leakage Currents," S.J. Pearton, E.E. Haller and A.G. Elliot, Appl. Phys. Lett. 44, 684 (1984). LBL-16915

53. "Junction Capacitance Spectroscopy," S.J. Pearton, LBL Internal Document PUB-3037 (1984).

54. "Comment on Neutralization of Shallow Acceptors in Si by Atomic Hydrogen," S.J. Pearton, Phys. Rev. Lett. 53, 855; Bell Labs TM 52337-840308-01 (1984).

55. "Donor Neutralization in GaAs(Si) by Atomic Hydrogen," J. Chevallier, W.C. Dautremont-Smith, C.W. Tu and S.J. Pearton, Appl. Phys. 47, 108 (1985); Bell Labs TM 52337-540510-01 (1984).

50

56. "Diffusion and Mobility of Cu in Ge," N. Stolwijk, W. Frank, J. Hozl, S.J. Pearton and E.E. Haller, J. Appl. Phys. 57, 5211 (1985).

57. "Diffusion Phenomena and Defect Generation in Rapidly Annealed GaAs," S.J. Pearton and K.D. Cummings, J. Appl. Phys. 58, 1500 (1985).

58. "Electrical Activation of Implanted Be, Mg, Zn and Cd in GaAs by Rapid Thermal Annealing, "S.J. Pearton, K.D. Cummings and G.P. Vella-Coleiro, J. Appl. Phys. 58, 3252 (1985).

59. "Hydrogenation of Shallow Donor Levels in GaAs," S.J. Pearton, W.C. Dautremont-Smith, J. Chevallier, C.W. Tu and K.D. Cummings, J. Appl. Phys. 59, 2821 (1986).

60. "Rapid Thermal Annealing in GaAs IC Processing," S.J. Pearton, K.D. Cummings and G.P. Vella-Coleiro, J. Electrochem. Soc. 132, 2743 (1985).

61. "Relationship Between Secondary Defects and Electrical Activation in Ion-Implanted, Rapidly Annealed GaAs," S.J. Pearton, R. Hull, D.C. Jacobson, J.M. Poate and J.S. Williams, Appl. Phys. Lett. 48, 38 (1986).

62. "Rapid Annealing of GaAs - Uniformity and Temperature Dependence of Activation," K.D. Cummings, S.J. Pearton and G.P. Vella-Coleiro, J. Appl. Phys. 60, 163 (1986).

63. "Characterization of GaAs and Si by a Microwave Photoconductance Technique," K.D. Cummings, S.J. Pearton and G.P. Vella-Coleiro, J. Appl. Phys. 60, 1676 (1986).

64. "Ohmic, Superconducting, Shallow AuGeNb Contact to GaAs," M. Gurvitch, A. Kastalsky, S. Schwarz, D.M. Hwang, A.D. Butherus, S.J. Pearton and C.R. Snider, J. Appl. Phys. 60, 3204 (1986).

65. "Local Structure of S Impurities in GaAs," F. Sette, S.J. Pearton, J.M. Poate, J.E. Rowe and J. Stohr, Phys. Rev. Lett. 56, 2637 (1986).

66. "Hydrogen Injection and Neutralization of B-acceptors in Si Boiled in Water," A.J. Tavendale, A.A. Williams and S.J. Pearton, Appl. Phys. Lett. 48, 590 (1986).

67. "Passivation of Deep Level Defects in MBE GaAs by Hydrogen Plasma Exposure," W.C. Dautremont-Smith, J.C. Nabity, V. Swaminathan, M. Stavola, J. Chevallier, C.W. Tu and S.J. Pearton, Appl. Phys. Lett. 49, 1098 (1986).

68. "Kinetics of Implantation Enhanced Interdiffusion of Ga and Al at GaAs-Al1Ga-As MBE Grown Interfaces," J. Cibert, P.M. Petroff, D.J. Werder, S.J. Pearton, A.C. Gossard and J.H. English, Appl. Phys. Lett. 49, 223 (1986).

69. "Effect of Crystal Stoichiometry on Activation Efficiency in Si Implanted, Rapid Thermal Annealed GaAs," A.R. Von Neida, S.J. Pearton, M. Stavola and R. Caruso, Appl. Phys. Lett. 49, 1708 (1986).

70. "Optically Detected Carrier Confinement to One and Zero Dimension in GaAs Quantum Well Wires and Boxes, J. Cibert, P.M. Petroff, G.J. Dolan, S.J. Pearton, A.C. Gossard and J.H. English, Appl. Phys. Lett. 49, 1275 (1986).

71. "Passivation of Si Donors and DX Centers in AlGaAs by Hydrogen Plasma Exposure," J.C. Nabity, M. Stavola, J. Lopata, W.C. Dautremont-Smith, C.W. Tu and S.J. Pearton, Appl. Phys. Lett. 50, 921 (1987).

72. "Interaction of Hydrogen and Thermal Donor Defects in Si," A. Chantre, S.J. Pearton, L.C. Kimerling, K.D. Cummings and W.C. Dautremont-Smith, Appl. Phys. Lett. 50, 513 (1987).

73. "Photoluminescence From Annealed Semi-Insulating GaAs Crystals - the 1.360 eV Band," V. Swaminathan, R. Caruso and S.J. Pearton, J. Appl. Phys. 63, 2164 (1988).

74. "Annealing Behavior of Ga+ Implanted GaAs-AlGaAs Observed by Conventional TEM,"

51

D.J. Werder and S.J. Pearton, J. Appl. Phys. 62, 318 (1987). 75. "Photoluminescence Study of the Shallow Donor Neutralization in GaAs(Si) by Atomic

Hydrogen," J. Weber, S.J. Pearton and W.C. Dautremont-Smith, Appl. Phys. Lett. 49, 1181 (1986).

76. "Dopant Type Effects on the Diffusion of Deuterium in GaAs," S.J. Pearton, W.C. Dautremont-Smith,, J. Lopata, C.W. Tu and C.R. Abernathy, Phys. Rev. B 36, 4260 (1987).

77. "Ion-Implantation and Activation Behavior of Si in MBE Grown GaAs-on-Si Substrates for GaAs MESFETs," N. Chand, F. Ren, S.J. Pearton, N.J. Shah and A-Y. Cho, IEEE Electron Device Lett. 8, 185 (1987).

78. "Activation Characteristics and Defect Structure in Si-Implanted GaAs-on-Si," S.M. Vernon, S.J. Pearton, J.M. Gibson and K.T. Short, Appl. Phys. Lett. 50, 1161 (1987).

79. "Vibrational Characteristics of Acceptor-Hydrogen Complexes in Si," M. Stavola, S.J. Pearton, J. Lopata and W.C. Dautremont-Smith, Appl. Phys. Lett. 50, 1096 (1987).

80. "Hydrogenation of GaAs-on-Si: Effects on Diode Reverse Leakage Current," S.J. Pearton, C.S. Wu, M. Stavola, F. Ren, J. Lopata, S.H. Vernon, V.E. Haven and W.C. Dautremont-Smith, Appl. Phys. Lett. 51, 496 (1987).

81. "Hydrogen in Crystalline Semiconductors," S.J. Pearton, J.W. Corbett and T.S. Shi, Appl. Phys. A 43, 153 (1987).

82. "Characterization of Direct MOCVD Growth of GaAs Layers on Si Substrates," S.J. Pearton, S.M. Vernon, C.R. Abernathy, K.T. Short, R. Caruso, M. Stavola, J.M. Gibson, V.E. Haven, A.E. White and D.C. Jacobson, J. Appl. Phys. 62, 862 (1987).

83. "Heterointerface Stability in GaAs-on-Si Grown by MOCVD Growth of GaAs Layers on Si Substrates," S.J. Pearton, D.L. Malm, L.A. Heimbrook, J. Kovalcheik, C.R. Abernathy, R. Caruso, S.M. Vernon and V.E. Haven, Appl. Phys. Lett. 51, 682 (1987).

84. "Implantation Tailoring of Electrically Active Dopant Profile in GaAs," K.T. Short, S.J. Pearton and C.S. Wu, J. Appl. Phys. 64, 1206 (1988).

85. "Rely to Comment on Local Structure of S Impurities in GaAs," F. Sette, S.J. Pearton, J.M. Poate, J.E. Rowe and J. Stöhr, Phys. Rev. Lett. 58, 1281 (1987).

86. "Electrical Activity of Defects in MBE Grown GaAs on Si and its Reduction by RTA," N. Chand, R. Rischer, A.M. Sergeant, D.V. Lang, S.J. Pearton and A.Y. Cho, Appl. Phys. Lett. 51, 1013 (1987).

87. "Characterization of GaAs grown by MOCVD on Si-on- insulator," S.J. Pearton, S.M. Vernon, K.T. Short, J.M. Brown, C.R. Abernathy, R. Caruso, S.N.G. Chu, V.E. Haven and S.N. Bunker, Appl. Phys. Lett. 51, 1188 (1987).

88. "Ion Implantation in GaAs," S.J. Pearton, Solid State Phenom. 1/2, 247 (1988). 89. "Thickness Dependence of Material Quality in GaAs-on-Si Grown by MOCVD," S.J.

Pearton, C.R. Abernathy, R. Caruso, K.T. Short, J.M. Brown, S.N.G. Chu, M. Stavola and V.E. Haven, J. Appl. Phys. 63, 775 (1988).

90. "Formation of Thermally Stable High Resistivity AlGaAs by Oxygen Implantation, " S.J. Pearton, M.P. Ianuzzi, C.L. Reynolds and L. Pelicolas, Appl. Phys. Lett. 52, 395 (1988).

91. "Antiphase Domains in GaAs Grown by MOCVD on SOI," S.N.G. Chu, S. Nakahara, S.J. Pearton, T. Boone and S.M. Vernon, J. Appl. Phys. 64, 2981 (1988).

92. "The Self-Trapping of H in Semiconductors," P. Deak, J.L. Lindstrom, L.C. Snyder, J.W. Corbett, S.J. Pearton and A.J. Tavendale, Phys. Lett. 126, 427 (1988).

93. "Si Implant Activation Efficiency and Spatial Uniformity for Semi-Insulating GaAs

52

Prepared by Various Growth Methods, M.L. Gray, J.M. Parsey, S.J. Pearton, K.T. Short, R.E. Ahrens, L. Sargent and J.S. Blakemore, J. App. Phys. 64, 1464 (1988).

94. "Implant Isolation of GaAs," K.T. Short and S.J. Pearton, J. Electrochem. Soc. 125, 2835 (1988).

95. "Lattice Location of Deuterium Interacting with the B Acceptor in Si," B.B. Nielsen, J.V. Anderson and S.J. Pearton, Phys. Rev. Lett. 60, 321 (1988).

96. "Low-Frequency Excitations of Acceptor-Hydrogen Complexes in Si," M. Stavola, S.J. Pearton, J. Lopata and W.C. Dautremont-Smith, Phys. Rev. B. 37, 8313 (1988).

97. "Ion Implantation Damage and Annealing in InAs, Gasb and GaP," S.J. Pearton, A.R. Von Neida, J.M. Brown, K.T. Short, L.J. Oster and U.K. Chakrabarti, J. Appl. Phys. 64, 629 (1988).

98. "Donor-Hydrogen Complexes in Passivated Si," K. Bergman, M. Stavola, S.J. Pearton and J. Lopata, Phys. Rev. B. 37, 2770 (1988).

99. "Electrical and Optical Effects of Hydrogen in Semiconductors," S.J. Pearton, Defects and Diffusion Forum, 62/63, 1 (1989).

100. "Passivation in Si," J.W. Corbett, J.L. Lindstron, S.J. Pearton and A.J. Tavendale, Solar Cells 24, 127 (1988).

101. "GaAs MESFETS Ring Oscillators and Divide by 2 Integrated Circuits on MBE GaAs-on-Si," F. Ren, N. Chand, P. Garbinski, S.J. Pearton, C.S. Wu, L.D. Urbanek, T.R. Fullowan and N. Shah, Electronics Lett. 24, 1037 (1988).

102. "MBE Growth of Lattice-Matched GaAs|(Ca, Sr)F2|Ge(100) Heterostructures," C.W. Tu, J.C. Beggy, F.A. Baiocchi, S.M. Abys, S.J. Pearton, S.J. Hsieh, R.F. Kopf, R. Caruso and A.S. Jordan, J. Val. Sci. Technol. B 6, 720 (1988).

103. "Ion Implantation of III-V Compounds," S.J. Pearton, in Concise Encyclopedia of Electronic and Optoelectronic Materials, p. 1031 (Pergammon 1990).

104. "Implantation Temperature Dependence of Electrical Activation, Solubility and Diffusion of Implanted Te, Cd and Si in GaAs," S.J. Pearton, J.S. Williams, K.T. Shoert, S.T. Johnson, D.C. Jacobson, J.M. Poate, J.M. Gibson and D.O. Boerma, J. Appl. Phys. 65, 1089 (1989).

105. "Effects of Atomic Hydrogen Incorporation in GaAs-on-Si," J.M. Zavada, S.J. Pearton, R.G. Wilson, C.S. Wu, M. Stavola, F. Ren, J. Lopata and W.C. Dautremont-Smith, J. Appl. Phys. 65, 347 (1989).

106. "The Structure of Acceptor-H and Donor-H Complexes in Si from Uniaxial Stress Studies," K. Bergman, M. Stavola, S.J. Pearton and T. Hayes, Phys. Rev. B 38, 9643 (1988).

107. "Ion Beam-Induced Intermixing of WSi0.45 and GaAs," S.J. Pearton, K.T. Short, K.S. Jones, A.G. Baca and C.S. Wu, Mat. Sci. Eng. B 3, 273 (1989).

108. "Material and Device Properties of 3" Diameter GaAs-on-Si with Buried p-type Layers," S.J. Pearton, K.M. Lee, N.M. Haegel, C.J. Huang, S. Nakahara, F. Ren, V.J. Scarpelli and K.T. Short, Mat. Sci. Eng., B 3, 293 (1989).

109. "Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Si," M. Stavola, K. Bergmann, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 61, 2786 (1988).

110. "Characterization of InP/GaAs/Si Structures Grown by Atmospheric Pressure MOCVD," S.J. Pearton, K.T. Short, A.T. Macrander, C.R. Abernathy, V.P. Mazzi, N.M. Haegel, M.M. Al-Jassim, S.M. Vernon and V.E. Haven, J. Appl. Phys. 65, 1083 (1989).

53

111. "Reactive Ion Etching of GaAs with CCl2F2O2 - Etch Rates, Surface Chemistry and Residual Damage," S.J. Pearton, M.J. Vasile, K.S. Jones, K.T. Short, E. Lane, T.R. Fullowan, A.E. Von Neida and N.M. Haegel, J. Appl. Phys. 65, 1281 (1989).

112. "Role of Vanadium in OMVPE Grown GaAs," W.S. Hobson, S.J. Pearton, V. Swaminathan, A.S. Jordan, HJ. Kanber, Y.J. Kao and N.M. Haegel, Appl. Phys. Lett. 54, 1772 (1989).

113. "Implant-Induced High Resistivity Regions in InP and InGaAs," S.J. Pearton, C.R. Abernathy, M.B. Panish, R.A. Hamm and L.M. Lunardi, J. Appl. Phys. 66, 656 (1989).

114. "RTA of GaAs in a Graphite Susceptor - Comparison with Proximity Annealing," S.J. Pearton and R. Caruso, J. Appl. Phys. 66, 663 (1989).

115. "Implantation Characteristics of InSb," S.J. Pearton, S. Nakahara, A.R. Von Neida, K.T. Short and L.J. Oster, J. Appl. Phys. 66, 1942 (1989).

116. "Passivation of the DX Center in AlGaAs by Hydrogen Plasma Exposure," M. Stavola and S.J. Pearton, Solid State Phen. 10, 273 (1990).

117. "Reply to Comment on Quantum or Classical Motion of H in Si:B," M. Stavola, K. Bergman, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 66, 1028 (1989).

118. "Temperature Dependence of RIE of GaAs with CCI2F2:O2," S.J. Pearton, A.B. Emerson, U.K. Chakrabarti, E. Lane, K.S. Jones, K.T. Short, A.E. White and T.R. Fullowan, J. Appl. Phys. 66, 3839 (1989).

119. "Hydrogen Passivation of Acceptors in InP," W.C. Dautremont-Smith, J. Lopata, S.J. Pearton, L.A. Koszi, M. Stavola and V. Swaminathan, J. Appl. Phys. 66, 1993 (1989).

120. "Structure and Dynamics of the Be-H Complex in GaAs," M. Stavola, S.J. Pearton, J. Lopata, C.R. Abernathy and Bergman, Phys. Rev. B. 39, 8051 (1989).

121. "Depth Dependence of Si Donor Passivation and Reactivation in Hydrogenated GaAs," F.P. McCluskey, L. Pfeiffer, K.W. West, J. Lopata, M. Lamont, T.D. Harris, S.J. Pearton and W.C. Dautremont-Smith, Appl. Phys. Lett. 54, 1769 (1989).

122. "Interaction of Be and O in GaAs," A.E. Von Neida, S.J. Pearton, W.S. Hobson and C.R. Abernathy, Appl. Phys. Lett. 54, 1540 (1989).

123. "RIE Induced Damage in GaAs and AlGaAs Using CH4/H2/Ar or CCl2F2/O2 Mixtures," S.J. Pearton, U.K. Chakrabarti and W.S. Hobson, J. Appl. Phys. 66, 2061 (1989).

124. "Material Dependent Amorphization and Epitaxial Crystallization of Ion-Implanted GaAs/AlAs Layer Structures," A.G. Cullis, N.G. Chen, C.R. Whitehouse, D.C. Jacobson, J.M. Poate and S.J. Pearton, Appl. Phys. Lett. 55, 1211 (1989).

125. "Al Composition Dependence of RIE of AlGaAs with CCl2F2:O2," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, A.B. Emerson, E. Lane and K.S. Jones, J. Appl. Phys. 66, 2137 (1989).

126. "Performance of GaAs MESFETS on InP Substrates," F. Ren, W.S. Hobson, S.J. Pearton, L.J. Oster and P.R. Smith, IEEE Electron Dev. Lett. 10, 389 (1989).

127. "Carbon and Zinc Delta-Doping for Schottky Barrier Enhancement on a-type GaAs," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, S.N.G. Chu and J. Kovalchick, Appl. Phys. Lett. 55, 1342 (1989).

128. "Zn Delta-Doping of GaAs by OMVPE," W.S. Hobson, S.J. Pearton, E.F. Schubert and G. Cabaniss, Appl. Phys. Lett. 55, 1546 (1989).

129. "Carbon in GaAs: Implantation and Isolation Characteristics," S.J. Pearton and C.R. Abernathy, Appl. Phys. Lett. 55, 678 (1989).

130. "Spin-on Glass and an Encapsulant for Annealing Si-Implanted GaAs," U.K. Chakrabarti

54

and S.J. Pearton, IETE Tech. Rev. 7, 340 (1990). 131. "High Performance AlGaAs/GaAs SDHTs and Ring Oscillators Grown by MBE on Si,"

F. Ren, N. Chang, Y.K. Chen, S.J. Pearton, D.M. Tennant and D.J. Resnik, IEEE Electron Dev. Lett. 10, 559 (1989).

132. "Ultra-High Doping of GaAs by Carbon During MOMBE," C.R. Abernathy, S.J. Pearton, R. Caruso, F. Ren and J. Kovalchick, Appl. Phys. Lett. 55, 1750 (1989).

133. "RIE of InAs, InSb and GaSb in CCl2F2/O2 and C2H6/H2," S.J. Pearton, W.S. Hobson, F. Baiocchi and K.S. Jones, J. Electrochem. Soc. 137, 1924 (1990).

134. "Bias Controlled Intersubband Switching in a GaAs/AlGaAs QW Laser," K. Berthold, A.F. Levi, S.J. Pearton, R.J. Malik, W.Y. Jan and J.E. Cunningham, Appl. Phys. Lett. 55, 1382 (1989).

135. "Electrical and Structural Changes in the Near-Surface of RIE InP," S.J. Pearton, U.K. Chakrabarti and F. Baioccchi, Appl. Phys. Lett. 55, 1633 (1989).

136. "Local Structure of DX-Like Centers from EXAFS" J.E. Rowe, F. Sette, S.J. Pearton and J.M. Poate, Physics of DX Centers in GaAs Alloys, Sol. St. Phen. 10, 283 (1990).

137. "Characterization on n-type Regions in GaAs Formed by SiF Molecular Ion Implantations," M.L. Gray, J. M. Parsey, A.R. Ahrens, S.J. Pearton, K.T. Short, L. Sargent and J.S. Blakemore, J. Appl. Phys. 66, 4176 (1989).

138. "Carbon Implantation in InP," S.J. Pearton, W.S. Chakrabarti, C.R. Abernathy and W.S. Hobson, Appl. Phys. Lett. 55, 2014 (1989).

139. "Real- time, in-situ Monitoring of GaAs and AlGaAs PL During Plasma Processing," A. Mitchell, R.A. Gottscho, S.J. Pearton and G.R. Schellerr, Appl. Phys. Lett. 56, 821 (1990).

140. "AlInAs/InGaAs HBTs Grown by MOCVD," B. Jalali, R.N. Nottenburg, W.S. Hobson, Y.K. Chen, T.R. Fullowan, S.J. Pearton and A.S. Jordan, Electron. Lett. 25, 1496 (1989).

141. "Damage-related High Resistivity Regions in AlInAs," S.J. Pearton, W.S. Hobson and U.K. Chakrabarti, Appl. Phys. Lett. 55, 1786 (1989).

142. "Dry Etching and Implant Isolation Characteristics of AlGaAs Grown by MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren and T.R. Fullowan, Semicond. Sci. Techn. 1042 (1991).

143. "Growth of GaAs/AlGaAs HBTs by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton, T. Fullowan, R. Montgomery and P. Wisk, J. Cryst. Growth 120, 234 (1992).

144. "Etch Rates and Surface Chemistry of AlGaAs and GaAs RIE in C2H6/H2," S.J. Pearton, W.S. Hobson and K.S. Jones, J. Appl. Phys. 66, 5009 (1989).

145. "Elevated Temperature RIE of GaAs and AlGaAs in C2H6/H2," S.J. Pearton and W.S. Hobson, Appl. Phys. 66, 5018 (1989).

146. "A PL Study of Hydrogenated GaAs on InP by MOCVD," V. Swaminathan, U.K. Chakrabarti, W.S. Hobson, R. Caruso, J. Lopata, S.J. Pearton and H.S. Luftman, J. Appl. Phys. 68, 902 (1990).

147. "Increase in PL of Zn-doped InP after Hydrogenation," V. Swaminathan, J. Lopata, S.E.G. Slusky, W.C. Dautremont-Smith and S.J. Pearton, Electron. Lett. 25, 1584 (1989).

148. "Partially-doped GaAs SQW FET," F. Ren, C.W. Tu, R.F. Kopf, C.S. Wu, A. Chandia and S.J. Pearton, Electron. Lett. 25, 1675 (1989).

149. "Alloyed Contacts to Susceptor RTA Si and Be Implanted InP," A. Katz and S.J. Pearton, J. Vac. Sci. Technol. 9, 178 (1991).

150. "Susceptor and Proximity RTA of Carbon-Implanted InP, A. Katz, S.J. Pearton and M. Soler, J. Vac. Sci. Technol. B 8, 12855 (1990).

55

151. "States of Hydrogen in Crystalline Semiconductors," S.J. Pearton, M. Stavola and J.W. Corbett, Rad. Effects and Defects in Solids 111/112, 323 (1989).

152. "Identification of a Fermi Resonance for a Defect in Si Deuterium-Boron Pair," G.D. Watkins, W.B. Fowler, MM. Stavola, G.G. Deleco, D.M. Kozach, S.J. Pearton and J. Lopata, Phys. Rev. Lett. 64, 467 (1990).

153. "Redistribution of Zn in GaAs-AlGaAs HBT Structures," W.S. Hobson, S.J. Pearton and A.S. Jordan, Appl. Phys. Lett. 56, 1251 (1990).

154. "Real- time Monitoring of Low Temperature, Hydrogen Plasma Passivation of GaAs," R.A. Gottscho, B.L. Preppernau, S.J. Pearton, B. Emerson, Giapis, J. Appl. Phys. 68, 440 (1990).

155. "Spin Orientation by Optical Pumping in GaAs/InP," G. Bacquet, N. Lauret, S.J. Pearton and W.S. Hobson, Solid State Comm. 80, 669 (1991).

156. "Tungsten Metallization for Stable and Self-Aligned InP-based Laser Devices," A. Katz, S.J. Pearton and M. Geva, J. Appl. Phys. 68, 3110 (1990).

157. "Ion Implantation for Isolation of III-V Semiconductors," S.J. Pearton, Mat. Sci. Rep. 4, 313 (1990).

158. "Carbon-doped Base GaAs-AlGaAs HBTs Grown by MO-MBE and MO-CVD Regrowth," W.S. Hobson, F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan and J. Lothian, IEEE Electron. Dev. Lett. 11, 241 (1990).

159. "Implant Isolation of GaAs-AlGaAs HBT Structures," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan, J. Lothian and A.W. Yanof, Appl. Phys. Lett. 56, 860 (1990).

160. "Temperature Dependence of Current Conduction in Barrier-Enhanced Carbon Delta-doped GaAs Diodes," A. Katz, S.J. Pearton, F. Ren and C.R. Abernathy, J. Vac. Sci. Tech. B. 8, 1270 (1990).

161. "Evidence for the Existence of a Negatively Charged Hydrogen Species in Plasma-Treated, n-type Si," A.J. Tavendale, S.J. Pearton and A.A. Williams, Appl. Phys. Lett. 56, 949 (1990).

162. "Reproducible Group V Partial Pressure RTA of InP and GaAs," S.J. Pearton, A. Katz and M. Geva, J. Appl. Phys. 68, 2482 (1990).

163. "Enhanced Hot-Electron PL from Heavily Carbon-doped GaAs," B.J. Aitchison, N.M. Haegel, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 56, 1154 (1990).

164. "Implant Activation and Redistribution in AlGaAs," S.J. Pearton, W.S. Hobson, A.E. Von Neida, N.M. Haegel, K.S. Jones, N. Morris and B.J. Sealy, J. Appl. Phys. 67, 2396 (1990).

165. "Selective Dry Etching of InGaAs and InP over AlInAs in CH4/H2/SF6," S.J. Pearton and W.S. Hobson, Appl. Phys. Lett. 56, 2186 (1990).

166. "RIE of InP, InGaAs, InAlAs: Comparison of C2H6/H2 with CCl2F2/O2," S.J. Pearton, W.S. Hobson, F.A. Baiocchi, A.B. Emerson and K.S. Jones, J. Vac. Sci. Technol. B 8, 57 (1990).

167. "RIE of GaAs, AlGaAs and GaSb in Cl2 and SiCl4," S.J. Pearton, U.K. Chakrabarti, W.S. Hobson and A.P. Kinsella, J. Vac. Sci. Technol. B 8, 607 (1990).

168. "Plasma Etching of III-V Semiconductors in CH4/H2/Ar ECR Discharges," C. Constantine, D. Johnson, S.J. Pearton, U.K. Chakrabarti, A.B. Emerson, W.S. Hobson and A.P. Kinsella, J. Va. Sci. Technol. B 8, 596 (1990).

169. "Pt/Ti Ohmic Contacts to Ultra-High Carbon Doped GaAs Formed by Rapid Thermal Processing," A. Katz, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 56, 1028

56

(1990). 170. "Cl2 and SiCl4 RIE of In-Based III-V Semiconductors," S.J. Pearton, U.K. Chakrabarti,

W.S. Hobson and A.P. Kinsella, J. Electrochem. Soc. 137, 3188 (1990). 171. "Use of Hydrogenated Chlorofluorocarbon Mixtures for RIE of In-based III-V

Semiconductors," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. Derktis and A.P. Kinsella, J. Vac. Sci. Technol. B 8, 1274 (1990).

172. "Dry Etching of GaAs, AlGaAs and GaSb in Hydrochlorofluorocarbon Mixtures," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, G.E. Derkets and A.P. Kinsella, J. Electrochem. Soc. 137, 3892 (1990).

173. "Incorporation of Carbon in Heavily-doped AlGaAs Grown by MOMBE," C.R. Abernathy, S.J. Pearton, M.O. Manasreh, D.W. Fischer and D.N. Talwar, Appl. Phys. Lett. 57, 294 (1990).

174. "Ion Milling Damage in InP and GaAs," S.J. Pearton, U.K. Chakrabarti, A.P. Kinsella and K.S. Jones, J. Appl. Phys. 68, 2760 (1990).

175. "Hydrogenation of GaAs-on-InP," U.K. Chakrabarti, S.J. Pearton, W.S. Hobson, J. Lopata and V. Swaminathan, Appl. Phys. Lett. 57, 887 (1990).

176. "Schottky Barrier Enhancement on n-type GaAs by As Implantation, C.S. Wu, F.. Ren, S.J. Pearton and D.M. Schleich, Phys. Stat. Solidi A 117 (1990).

177. "Injection and Drift of H in p-type GaAs," A.J. Tavendale, S.J. Pearton, A.A. Williams and D.A. Alexiev, Appl. Phys. Lett. 56, 903 (1990).

178. "Hydrogen in Carbon-doped GaAs Grown by MOMBE," D.M. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy and J. Lopata, Appl. Phys. Lett. 57, 2561 (1990).

179. "Resistivity of Ion-Implanted Epitaxial InGaAsP," S.J. Pearton, Properties of InP (INSPEC, London), Data Review 6, pp. 405-407 (1991).

180. "Sheet Resistivity of Ion-Implanted Epitaxial InP," S.J. Pearton, Properties of InP (INSPEC, London), Data Review 6, pp. 36-38 (1991).

181. "Sn Doping of GaAs and AlGaAs Grown by MOMBE, C.R. Abernathy, S.J. Pearton and N.T. Ha, J. Cryst. Growth 108, 827 (1991).

182. "Electron Cyclotron Resonance Plasma Etching in InP in CH4/H2/Ar," S.J. Pearton, U.K. Chakrabarti, A.P. Kinsella, D. Johnson and C. Constantine, Appl. Phys. Lett. 56, 1424 (1990).

183. "Rapid Isothermal Processing for Fabrication of GaAs Based Electronic Devices," S.J. Pearton, F. Ren, A. Katz, T.R. Fullowan, C.R. Abernathy, W.S. Hobson and R.F. Kopf, IEEE Electrron. Dev. 39, 154 (1992).

184. "Carbon-doped MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, Mat. Sci. Eng. B. 13, 305 (1992).

185. "Growth of High Quality AlGaAs by MOMBE," C.R. Abernathy, A.S. Jordan, S.J. Pearton, W.S. Hobson, D.A. Bohling and G.T. Muhr, Appl. Phys. Lett. 56, 2654 (1990).

186. "Use of Pt Metallization of Reduce Leakage Currents in GaAs MESFETs," F. Ren, T.R. Fullowan, A.B. Emerson, W.S. Hobson and S.J. Pearton, J. Electron Mater. 20, 595 (1991).

187. "High Energy (56 MeV) Implantation in Si, GaAs and InP," S.J. Pearton, B. Jalali, J.M. Poate, J.D. Fox, K.W. Kemper, C.W. Magee and K.S. Jones, Appl. Phys. Lett. 57, 2253 (1990).

188. "Use of CF3Br Discharges for RIE of III-V Semiconductors," S.J. Pearton, W.S. Hobson, M. Geva, U.K. Chakrabarti, E. Lane and A.P. Kinsella, Plasma Chem. and Plasma Proc.

57

11, 295 (1991). 189. "Hydrogen Passivation of Si δ-doped GaAs Grown by MBE," V. Swaminathan, M.

Asom, G. Levescu, M. Geva, F.A. Stevie, S.J. Pearton and J. Lopata, Appl. Phys. Lett. 57, 2928 (1990).

190. "Exponential Diffusion Profile for Impurity Trapping at an Unsaturable Trap," D.A. Tulchinsky, J.W. Corbett, J.T. Borenstein and S.J. Pearton, Phys. Rev. B 42, 11881 (1990).

191. "Passivation of Dopants in InGaP using ECR Hydrogenation,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Mat. Sci. Eng. B 38, 263 (1994).

192. "GRINSCH GaAs/AlGaAs Laser Structure Grown by OMVPE Using a Novel Al Source," W.S. Hobson, A.F.J. Levi, J. O'Gorman, S.J. Pearton, C.R. Abernathy and V. Swaminathan, Electronics Lett. 26, 1762 (1990).

193. "Carbon Implantation in InGaAs and AlInAs," S.J. Pearton, W.S. Hobson, A.P. Kinsella, J. Kovalchick, U.K. Chakrabarti and C.R. Abernathy, Appl. Phys. Lett. 56, 1263 (1990).

194. "Unintentional Hydrogenation of GaN and Related Alloys During Processing,” S.J. Pearton, C.R. Abernathy, C.B. Vartuli, J.W. Lee, J.D. MacKenzie, R.G. Wilson, R.J. Shul, F. Ren and J.M. Zavada, J. Vac. Sci. Technol. A 14, 831 (1996).

195. "GaAs-AlGaAs HBT with Carbon-Doped Base Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T.R. Fullowan, J. Lothian and A.S. Jordan, Electron Lett. 26, 724 (1990).

196. "Degradation-Free ECR Plasma Etching of InP," S.J. Pearton, U.K. Chakrabarti, A.P. Perley, C. Constantine and D. Johnson, Semicond. Sci. Techn. 6, 929 (1991).

197. "Erratum: Evidence for the Existence of a Negatively Charged Hydrogen Species in Plasma Treated n-type Si," A.J. Tavendale, S.J. Pearton and A.A. Williams, Appl. Phys. Lett. 57, 2377 (1990).

198. "Effect of Source Chemistry and Growth Parameters on AlGaAs Grown by MOMBE," C.R. Abernathy ,S.J. Pearton, F. Baioccki, A.S. Jordan, D.A. Bohling, G.T. Muhr and T. Ambrose, J. Cryst. Growth 110, 457 (1991).

199. "Injection and Drift of a Positively Charged Hydrogen Species in p-type GaAs," A.J. Tavendale, S.J. Pearton, A.A. Williams and D. Alexiev, Appl. Phys. Lett. 56, 1457 (1990).

200. "Hydrogenation of GaAs-on InP," U.K. Chakrabarti, S.J. Pearton, W.S. Hobson, J. Lopata and V. Swaminathan, Appl. Phys. Lett. 57, 887 (1990).

201. "Use of UV/Ozone Cleaning to Remove C and O from GaAs Prior to MOMBE and MOCVD," S.J. Pearton, F. Ren, C.R. Abernathy, W.S. Hobson and H.S. Luftman, Appl. Phys. Lett. 58, 416 (1991).

202. "Improved n-type GaAs Ohmic Contacts Compatible with a Cl-based Dry-etch Process," F. Ren, T.R. Fullowan, S.J. Pearton, W.S. Hobson and H.B. Emerson, J. Electron. Mater. 20, 305 (1991).

203. "RIP of Pt/Ti Contracts to p-type III-V Binary and Related Materials," A. Katz, S. Chu, B. Weir, C.R. Abernathy, W.S. Hobson, S.J. Pearton and W. Savin, IEEE Electron. Dev. 39, 184 (1992).

204. "Novel C-doped p-channel MESFET Grown by MOMBE," F. Ren, C.R. Abernathy and S.J. Pearton, J. Appl. Phys. 70, 2885 (1991).

205. "Highly-doped InAlAs Growth and Ohmic Contact Processes," A. Katz, W.S. Hobson, S. Chu, E. Weir, S.J. Pearton and W. Savin, Semicond. Sci. Techn. 6, 1158 (1991).

58

206. "ECR Plasma Etching of III-V Semiconductors in Cl2-based Discharges - Part II: InP and Related Materials," S.J. Pearton, W.S. Hobson, U.K. Chakrabarti, A. Katz and A.P. Perley, Plasma Chem. and Plasma Proc. 11, 423 (1991).

207. "ECR Plasma Etching of III-V Semiconductors in Cl2 Based Discharges - Part I: GaAs and Related Compounds," S.J. Pearton, U.K. Chakrabarti, A. Katz, A.P. Perley and W.S. Hobson, Plasma Chem. and Plasma Proc. 11, 405 (1991).

208. "Characterization of Pseudomorphic InGaAs Channel Modulation-doped FET Structures Grown by MBE," R. Kopf, J.M. Kuo, J. Kovalchick, S.J. Pearton, E.D. Jones and A. Ourmazd, J. Appl. Phys. 68, 4029 (1990).

209. "Dry Etching of GaAs, AlGaAs and GaSb using ECR and RF Ch4/H2/Ar or C2H6/Ar Discharges," S.J. Pearton, U.K. Chakrabarti, A.P. Perley, W.S. Hobson and Gevea, J. Electrochem. Soc. 138, 1432 (1991).

210. "High Power 980 nm AlGaAs/InGaAs Strained QW Lasers Grown by OMVPE," Y.K. Chen, M.C. Wu, W.S. Hobson, S.J. Pearton, A.M. Sergeant and M. Chin, Photonics Lett. 3, 406 (1991).

211. "Improvement of Ohmic Contracts on GaAs with in-situ Cleaning," F. Ren, A.B. Emerson, S.J. Pearton, R.T. Fullowan and J.M. Brown, Appl. Phys. Lett. 58, 1030 (1991).

212. “In-based p-ohmic Contacts to the Base Layer of AlGaAs/GaAs HBT," F. Ren, S.J. Pearton, W.S. Hobson, T.R. Fullowan and A.B. Emerson, Appl. Phys. Lett. 58, 1158 (1991).

213. "Susceptor and Proximity RTA of C-implanted InP," A. Katz and S.J. Pearton, J. Vac. Sci. Technol. B 8, 1285 (1990).

214. "Hydrogen in Crystalline Semiconductor," M. Stavola and S.J. Pearton in Concise Encyclopedia of Electronic and Optoelectronic Materials (Pergammon Press, NY).

215. "ECR Plasma-Induced Damage in AlGaAs/GaAs/AlGaAs SQW," V. Swaminathan, H. Asom, U.K. Chakrabarti and S.J. Pearton, Appl. Phys. Lett. 58, 1256 (1991).

216. "Measurement of Electron Densities in ECR Plasmas for Etching of III-V Semiconductors," S.J. Pearton, T. Nakano and R.A. Gottscho, J. Appl. Phys. 69, 3206 (1991).

217. "AlInAs/InGaAs HBT Fabricated by ECR Etch," T.R. Fullowan, S.J. Pearton, R. Kopf and P.R. Smith, J. Vac. Sci. Technol. B 9, 1445 (1991).

218. "Sn Doping of GaAs and AlGaAs by MOMBE Using Tetraethyltin," C.R. Abernathy, S.J. Pearton, F. Ren and J. Song, J. Cryst. Growth 113, 412 (1991).

219. "Dry Etching Techniques and Chemistries for III-V Semiconductors," S.J. Pearton, Mater. Sci. Eng. B 10, 187 (1991).

220. "Comparison of CH4/H2/Ar RIE and ECR Plasma Etching of In-based III-V Alloys," S.J. Pearton, U.K. Chakrabarti, A. Katz, A.P. Perley, W. S. Hobson and C. Constantine, J. Vac. Sci. Technol. B 9, 1421 (1991).

221. "High Quality AlGaAs Grown by OMVPE Using TMAAl as the Al Precursor," W.S. Hobson, T.D. Harris, C.R. Abernathy, S.J. Pearton, Appl. Phys. Lett. 58, 77 (1991).

222. "Dry Etching Characteristics of InGaAlAs Alloys in CCl2F2/Ar and CH2/H2/Ar Dis-charges," S.J. Pearton and R. Kopf, J. Electron. Mater. 20, 535 (1991).

223. "Self-Aligned Technology of W-Contacted InP-Based Mesa Laser Devices," A. Katz, S.J. Pearton and M. Geva, Appl. Phys. Lett. 59, 286 (1991).

224. "Sidewall Roughness During Dry Etching of InP," U.K. Chakrabarti, S.J. Pearton and F.

59

Ren, Semicond. Sci and Technol. 6, 308 (1991). 225. "Alloyed Contacts to Susceptor RTA Si-Implanted InP," A. Katz and S.J. Pearton, J. Vac.

Sci. Technol. 9, 178 (1991). 226. "Ohmic Contacts to Heavily Carbon-doped AlGaAs," A. Katz, C.R. Abernathy, S.J.

Pearton, B. Wein and W. Savin, J. Appl. Phys. 69, 2276 (1991). 227. "Wet and Dry Etching of LiGaO2 and LiAlO 2,” J.W. Lee, S.J. Pearton, C.R. Abernathy,

J.M. Zavada and B.L. Chai, J. Electrochem. Soc. 143, L169 (1996). 228. "10 Gbit/High Sensitivity, Low Error Rate Decision Circuit Implemented with C-doped

AlGaAs/GaAs HBTs," R.K. Montgomery, P. Smith, F. Ren, T.R. Fullowan, C.R. Abernathy, P. Kopf, S.J. Pearton, J. Lothian, P. Wisk and R.N. Nottenburg, Electron Lett. 29, 976 (1991).

229. "The Roles of Al and H in Impurity Contamination in AlGaAs," C.R. Abernathy, S.J. Pearton, D.A. Bohling and G.T. Muhr, J. Cryst. Growth 111, 574 (1991).

230. "Fundamental Issues in Hydrogen-Defect Interactions," S.J. Pearton, et al., Rev. Mod. Phys. 64, 559 (1992).

231. "RTCVD of SiO 2 Films onto InP," A. Katz, A. Feingold, S.J. Pearton and U.K. Chakrabarti, Appl. Phys. Lett. 59, 579 (1991).

232. "Ion Implantation Doping and Isolation of InGaP," S.J. Pearton, J. Kuo, F. Ren, A. Katz and A. Perley, Appl. Phys. Lett. 59, 1467 (1991).

233. "Properties of TiN Thin Films Deposited by RTCVD Using Tetrakis Ti Precursor," A. Katz, A. Feingold, S.J. Pearton, S. Nakahara, M. Ellington, U. Chakrabarti, M. Geva and E. Lane, J. Appl. Phys. 70, 3666 (1991).

234. "Dry Etch Processing of GaAs/AlGaAs HEMT Structures," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan and U. Chakrabarti, J. Vac. Sci. Techn. 9, 2487 (1991).

235. "High Quality RTA of InP and GaAs Substrates Under Low Pressure TBP and TBA Ambients," A. Katz, A. Feingold, S.J. Pearton, C.R. Abernathy, M. Geva and K. Jones, J. Vac. Sci. Techn. 9, 2466 (1991).

236. "AlGaAs/GaAs HEMTs, Inverters and Ring Oscillators with InGaAs and AlGaAs Etch Stop Layers," F. Ren, S.J. Pearton, R. Kopf, S. Chu and S. Pei, Electron Lett. 27, 1175 (1991).

237. "10 Gbit/s AlGaAs/GaAs HBT Driver IC For Lasers or Lightwave Modulators," R. Montgomery, F. Ren, C.R. Abernathy, T. Fullowan, R. Kopf, P. Smith, S.J. Pearton, P. Wisk, J. Lothian and R. Nottenburg, Electron. Lett. 27, 1827 (1991).

238. "III-V Semiconductor Device Dry Etching Using ECR Discharges," S.J. Pearton, F. Ren, T. Fullowan, T. Lothian, A. Katz, R. Kopf and C.R. Abernathy, Plasma Sources: Sci. and Techn. 1, 18 (1192).

239. "Self-Aligned AlGaAs/GaAs HBT Grown by MOMBE," F. Ren, T. Fullowan, C.R. Abernathy, S.J. Pearton, P. Smith, R. Kopf and E.J. Laskowski, Electron. Lett. 27, 1054 (1991).

240. "RTP of WSix Contacts to InP in Low Pressure N2:H2 and TBP Ambients," A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, M. Geva, E. Lane and K.S. Jones, J. Appl. Phys. 69, 7664 (1991).

241. "Single Energy MeV Implant Isolation of Multilayer III-V Device Structures," R. Elliman, M. Ridgway, C. Jagadish, S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, C.R. Abernathy and R. Kopf, J. Appl. Phys. 71, 1010 (1992).

242. "Growth of pnp HBT Structures by MOMBE," C.R. Abernathy, F. Ren, S.J. Pearton,

60

T.R. Fullowan, P. Wisk and J. Lothian, J. Appl. Phys. 71, 1219 (1992). 243. "Dissociation of P-H, As-H and Sb-H Complexes in n-type Si," S.J. Pearton and J.

Lopata, Appl. Phys. Lett. 59 (1991). 244. "Ohmic Contacts to n-type InGaP," F. Ren, J. Kuo, S.J. Pearton and T.R. Fullowan, J.

Electron. Mater. 21, 243 (1992). 245. "Effect of Ar Addition in ECR CH4/H2/Ar Plasma Etching of GaAs, InP and InGaP,”

J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electr. 39, 1095 (1996).

246. "Whispering Mode Microdisk Lasers," S. McCall, A. Levi, R. Slusher, S.J. Pearton and R.A. Logan, Appl. Phys. Lett. 60, 289 (1992).

247. "Hybrid ECR-RF Plasma Etching of TiN Thin Films Grown by RTCVD," S.J. Pearton, A. Katz and A. Feingold, Semicond. Sci. Technol. 6, 830 (1991).

248. "Thermal Stability of Dopant-Hydrogen Pairs in GaAs," S.J. Pearton, C.R. Abernathy and J. Lopata, Appl. Phys. Lett. 59 (1991).

249. "ECR Microwave Plasma Etching of InGaAs-GaAs SQW Laser Structures," S.J. Pearton and W.S. Hobson, Semicond. Sci. Techn. 6, 948 (1991).

250. "Growth and Dry Etch Processing of MOMBE GaAs p-n Junctions," S.J. Pearton, F. Ren, C.R. Abernathy, T.R. Fullowan and J. Lothian, Semicond. Sci. Tech. 6, 1049 (1991).

251. "Characteristics of III-V Dry Etching in HBr-based Discharges," S.J. Pearton, U. Chakrabarti, E. Lane, A. Perley, C.R. Abernathy and W.S. Hobson, J. Electrochem. Soc. 139, 856 (1992).

252. "Isolation Properties and Experimental Ranges of High Energy Ions in GaAs and InP," S.J. Pearton, B. Jalali, C.R. Abernathy, W.S. Hobson, J. Fox, K. Kemper and D. Roa, J. Appl. Phys. 71, 2663 (1992).

253. "GaAs/AlGaAs QW and Modulation-doped Heterostructures Grown by OMVPE using TMAA1," W.S. Hobson, F. Ren, S. Sputz, T. Harris, C.R. Abernathy, S.J. Pearton and K.S. Jones, Appl. Phys. Lett. 59, 1975 (1991).

254. "Carbon and Tin Doped npn and pnp AlGaAs/GaAs HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, T. Fullowan, J. Lothian, P. Wisk, Y.K. Chen, W.S. Hobson and P. Smith, Electron. Lett. 27, 2391 (1991).

255. "Incorporation of Hydrogen in Semiconductors During Crystal Growth and Device Processing," S.J. Pearton, M. Stavola and J.W. Corbett, Ad. Mat. 4, 332 (1992).

256. "Hydrogen Incorporation into GaAs, InP and Related Compounds During Epitaxial Growth and Device Processing," S.J. Pearton, C.R. Abernathy, W.S. Hobson, F. Ren, T. Fullowan, U. Chakrabarti, M. Stavola and D. Kozuch, Mat. Sci. Eng. B 13, 171 (1992).

257. "Highly Stable SiO 2 Films Deposited by Means of RTCVD onto InP," A. Katz, A. Feingold, U. Chakrabarti, S.J. Pearton and K. Jones, Appl. Phys. Lett. 59, 2552 (1991).

258. "Stability of C and Be-doped Base GaAs/AlGaAs HBTs," F. Ren, T. Fullowan, J. Lothian, P. Wisk, C.R. Abernathy, R. Kopf, S. Downey and S.J. Pearton, Appl. Phys. Lett. 59, 3613 (1991).

259. "Doping of InGaAs and AlInAs by Si and Be Implantation," E. Hailemariam, S.J. Pearton, W.S. Hobson, H.S. Luftman and A. Perley, J. Appl. Phys. 71, 656 (1992).

260. "Influence of Ammonia on RTCVD of TiN Films From Tetrakis Ti Precursor onto InP," A. Katz, A. Feingold, S. Nakahara, E. Lane, M. Geva, S.J. Pearton, D. Stevie and K. Jones, J. Appl. Phys. 71, 993 (1992).

261. "Dopant Passivation in AlInAs and InGaP by Atomic Deuterium," S.J. Pearton, J. Kuo,

61

W.S. Hobson, F. Ren, M. Geva and A. Katz, Appl. Phys. Lett. 59, 2703 (1991). 262. "Fast Thermal Kinetic Growth of SiO 2 Films onto InP by RTCVD," A. Katz, A.

Feingold, S.J. Pearton, U. Chakrabarti and K. Lee, Semicond. Sci. Techn. 7, 583 (1992). 263. "Characteristics of Be+ and O+ co-implantation in GaAs/AlGaAs HBTs," S.J. Pearton, F.

Ren, P. Wisk, T. Fullowan, R. Kopf, J. Kuo, W.S. Hobson and C.R. Abernathy, J. Appl. Phys. 69, 698 (1991).

264. "The Feasibility of Using TMAA1 as an Al Precursor for MOMBE," C.R. Abernathy, A. Jordan, S.J. Pearton, F. Ren, F. Baiocchi, D. Bohling and G. Muhr, J. Cryst. Growth 109, 31 (1991).

265. "Properties of TiN Thin Films Deposited by RTCVD Using Dimethylamide Ti Precursor," A. Katz, A. Feingold, S.J. Pearton, S. Nakahara, M. Eillington, U. Chakra-barti, M. Geva and E. Lane, J. Appl. Phys. 70, 3666 (1991).

266. "Use of MeV O+ Ion Implantation for Isolation of GaAs/Al GaAs HBTs," S.J. Pearton, F. Ren, J. Lothian, T. Fullowan, A. Katz, P. Wisk, C. Abernathy, R. Kopf, R. Elliman, M. Ridgway, C. Jagadish and J. Williams, J. Appl. Phys. 71, 4949 (1992).

267. "Batch Fabrication and Structure of Integrated GaAs/AlGaAs FET-SEED Devices," L. D'Asario, E. Laskowski, S. Pei, R. Leigenguth, R. Woodward, M. Focht, A. Lentine, R. Kopf, J. Kuo, S.J. Pearton, F. Ren and L.E. Smith, IEEE Electron Dev. Lett. EDL 13, 528 (1992).

268. "W Metallization onto InP Prepared by RTLPCVD of WF6 and H2," A. Katz, A. Feingold, S.J. Pearton, E. Lane, S. Nakahara and M. Geva, Semicond. Sci. Techn. 7, 1325 (1992).

269. "Dopant Incorporation in GaAs and AlGaAs Grown by MOMBE for High Speed Devices,” C.R. Abernathy, F. Ren, S.J. Pearton and J. Song, J. Electron. Mater. 21, 323 (1992).

270. "The Effect of ECR Generated H2 Plasma on Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton and F. Ren, J. Vac. Sci. Technol. B 10, 2153 (1992).

271. "Single Wafer Processes by RT-LPMOCVD Modules-application in the Manufacturing of InP-Based Laser Devices," A. Katz and S.J. Pearton, Mat. Phys. Chem. 32, 315 (1992).

272. "Mask Erosion During Dry Etching of Deep Features in III-V Semiconductor Structures," J. Lothian, F. Ren and S.J. Pearton, Semicond. Sci. Technol. 7, 1199 (1992).

273. "Room Temperature Operation of Microdisc Lasers with Submilliamp Threshold Current," A. Levi, R. Slusher, S. McCall, T. Tanbun-ek, D. Coblentz and S.J. Pearton, Electronics Lett. 28, 1010 (1992).

274. "Dissociation Energies of Acceptor-Hydrogen Complexes in InP,” S.J. Pearton, W.S. Hobson and C.R. Abernathy, Appl. Phys. Lett. 61 , 14 (1992).

275. "Tri-Layer Lift-Off Metallization Process Using Low-Temperature Deposited SiN x," J. Lothian, F. Ren, S.J. Pearton, U.K. Chakrabarti, C.R. Abernathy and A. Katz, J. Vac. Sci. Technol. B 10, 2361 (1992).

276. "Dry Etching Bilayer and Trilayer Resist Systems for Submicron Gate Length GaAs-Based HEMTs for Power and Digital Applications," F. Ren, S.J. Pearton, D. Tennant, D. Resnik, C.R. Abernathy, R. Kopf, C. Wu, M. Hu, C. Pai, B. Paine, D.C. Want and C.P. Wen, J. Vac. Sci. Technol. B. 10, 2949 (1992).

277. "New High Rate Dry Etch Mixture for InP-Based Heterostructure," S.J. Pearton, U.

62

Chakrabarti, D. Coblentz, F. Ren, T.R. Fullowan and A. Katz, Electron Lett. 28, 448 (1992).

278. "Microwave Cl2/H2 Discharges for High Rate Etching of InP," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Electronics Lett. 28, 1749 (1992).

279. "Dry Etching of Submicron Gratings for InP Laser Structures - Comparison of HI/H2, CH2/H2 and C2H6/H2 Plasma Chemistries," S.J. Pearton, F. Ren, W.S. Hobson, C. Green and U.K. Chakrabarti, Semicond. Sci. Technol. 7, 1217 (1992).

280. "Dry Etching of III-V Semiconductors in CH 3I, C2H 5 I and C 3H7 I Discharges,” U. Chakrabarti, S.J. Pearton, A. Katz, W.S. Hobson and C.R. Abernathy, J. Vac. Sci. Technol. B 10, 2378 (1992).

281. "0.25 µm Pseudomorphic HEMTs Processed with Damage-Free Dry Etch Gate Recess Technology," F. Ren, S.J. Pearton, C.R. Abernathy, C.S. Wu, M. Hu, C.K. Pao, D.C. Wang and C.P. Wen, IEEE Electron Dev. 39, 2701 (1992).

282. "Low Resistance W Films on GaAs Deposited by Means of RTLPCVD," A. Katz, A. Feingold, S. Nakahara, S.J. Pearton and E. Lane, Appl. Phys. Lett. 61, 525 (1992).

283. "Smooth Low-Bias Plasma Etching of InP in Microwave Cl2/CH4/H2 Mixtures," C. Constantine, C. Barratt, S.J. Pearton, F. Ren and J. Lothian, Appl. Phys. Lett. 61, 2899 (1992).

284. "Self-Aligned Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices," S.J. Pearton, A. Katz, A. Feingold, F. Ren, T.R. Fullowan, J. Lothian and C.R. Abernathy, Mat. Sci. Eng. B. 15, 82 (1992).

285. ”AlGaAs/GaAs HBTs Grown on InP by OMVPE," W.S. Hobson, F. Ren, S.J. Pearton, T. Fullowan, E. Laskowski and Y.K. Chen, Semicond. Sci. Technol. 7, 595 (1992).

286. "DX-like Centers in Al GaAsSb," A. Polyakov, M. Stam, A.G. Milnes, A. Bochkarev and S.J. Pearton, Physica Stat. Solidi A131, K37 (1992).

287. "HI-Based Dry Etching of GaAs, InP and Related Compounds," S.J. Pearton, U. Chakrabarti, W. Hobson, C.R. Abernathy, A. Katz, F. Ren, T.R. Fullowan and A. Perley, J. Electrochem. Soc. 139, 1763 (1992).

288. "Single Electron Capacitance Spectroscopy of Discrete Quantum Wells," R. Ashoori, H.L. Stormer, J.S. Weiner, L. Pfeiffer, S.J. Pearton, K.W. Baldwin and K. West, Phy. Rev. Lett. 68, 3088 (1992).

289. "Comparison of Ga and As Precursors for GaAs C-doping by OMVPE Using CCl4," W.S. Hobson, S.J. Pearton, D. Kozuch and M. Stavola, Appl. Phys. Lett. 60, 3259 (1992).

290. "Wet and Dry Etching Characteristics of AlInP," J. Lothian, J. Kuo, W.S. Hobson, E. Lane, F. Ren and S.J. Pearton, J. Vac. Sci. Technol. B 10, 1061 (1992).

291. "Effect of Hydrogen Treatment on Electrically Active Centers in AlGaAsSb," A. Polyakov, M. Stan, A. Milnes, A. Bochkarev, S.J. Pearton, R. Wilson, P.R. Choubury and R. Holland, Appl. Phys. Lett. 60, 3004 (1992).

292. "InGaP/GaAs Based HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, P. Wisk and R. Esqui, Electron. Lett. 28, 1550 (1992).

293. "GaAs Via Hole Etching and MOMBE Regrowth, " F. Ren, S.J. Pearton, C.R. Abernathy, R. Esqui, T.R. Fullowan, P. Wisk and J. Lothian, Semicond. Sci. Technol. 7 850 (1992).

294. "Stability of InAs Contact Layers on GaAs/AlGaAs HBTs During Implant Isolation Annealing," F. Ren, S.N.G. Chu, C.R. Abernathy, T.R. Fullowan, J. Lothian and S.J. Pearton, Semicond. Sci.. Technol. 7, 793 (1992).

295. "ECR Plasma Etching of CVD Diamond Thin Films," S.J. Pearton, A. Katz, F. Ren and J.

63

Lothian, Electron Lett. 28, 822 (1992). 296. "Improved Breakdown of AlInAs/InGaAs HBTs," T.R. Fullowan, S.J. Pearton, R.F.

Kopf, Y. Chen, M. Chin and F. Ren, Electronic Lett. 27, 2340 (1991). 297. "Plasma and Wet Chemical Etching of InGaP," J.R. Lothian, J.M. Kuo, F. Ren and S.J.

Pearton, J. Electron. Mater. 21, 441 (1992). 298. "Schottky Barriers of Various Metals on AlGaAsSb and the Influence of H and S

Treatments on Their Properties,” A. Polyakov, M. Stam, A.G. Milnes, A. Bocharev and S.J. Pearton, J. Appl. Phys. 71, 4411 (1992).

299. "Formation of TiN x Contacts to InGaAs/InP by Means of a Load-Locked Integrated Process," A. Katz, A. Feingold and S.J. Pearton, Semicond. Sci. Technol. 7, 436 (1992).

300. "Thermal Stability of GaAs(C)/InAs Superlattices Grown by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, W. Hobson, P. Fuoss, F. Lamelas, S.N.G. Chu and F. Ren, Appl. Phys. Lett. 60, 1339 (1992).

301. "Hydrogen Treatment on Shallow and Deep Centers in GaSby," A. Polyakov, S.J. Pearton, R.G. Wilson, R. Hillard, X. Bau, A.G. Milnes and J. Lopata, Appl. Phys. Lett. 60, 1318 (1992).

302. "Activation and Diffusion Characteristics of Implanted Si and Be in AlInP," S.J. Pearton, W.S. Hobson, J.M. Kuo, H. Luftman, A. Katz and F. Ren, Appl. Phys. Lett. 60, 1117 (1992).

303. "High-rate Anisotropic Dry Etching of InP in HI-based Discharges," S.J. Pearton, U.K. Chakrabarti, A. Katz, F. Ren and T. Fullowan, Appl. Phys. Lett. 60, 838 (1992).

304. "Ion Implantation: III-V Compounds," S.J. Pearton, in Encyclopedia of Mat. Sci. Eng. Vol. 2, ed. R. Cahn (Pergammon Press, NY 1991) pp. 1021-1026.

305. "Microstructural Study of Low Resistivity TiN x Formed by RTMOCVD onto InP," A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, E. Lane and K.S. Jones, Semicond. Sci. Technol. 8, 450 (1993).

306. "C-doped AlGaAs by OMVPE: Doping Properties, O and H Incorporation and Device Applications," W.S. Hobson, S.J. Pearton, F. Ren, Y. Cheng, D. Kozuch and M. Stavola, Mat. Sci. Eng. B. 20, 266 (1993).

307. “Mg Doping of InP and InGaAs Grown by MOMBE using Dis-cyclopentadiemyl-magnesium," C.R. Abernathy, P. Wisk, S.J. Pearton and F. Ren, Appl. Phys. Lett. 62, 258 (1993).

308. "High Temperature RTA of InP and Related Materials," S.J. Pearton and A. Katz, Mat. Sci. Eng. B 18, 153 (1993).

309. "Dry Etching Characteristics of III-V Semiconductors in Microwave BC13 Discharges," S.J. Pearton, W.S. Hobson, C.R. Abernathy, F. Ren, T.R. Fullowan, A. Katz and A. Perley, Plasma Chem. Plasma Proc. 11, 311 (1993).

310. "Plasma Etching of ZnS, ZnSe, CdS and CdTe in ECR CH4/H2/Ar and H2/Ar Dis-charges,” S.J. Pearton and F. Ren, J. Vac. Sci. Technol. B 11, 15 (1993).

311. "W(Zn) Selectivity Deposited and Locally Diffused Ohmics Contacts to p-InGaAs/InP Formed by RTLPMOCVD," A. Katz, A. Rog, A. Feingold, M. Geva, N. Moriya, S.J. Pearton, E. Lane, T. Keel and C.R. Abernathy, Appl. Phys. Lett. 62, 2652 (1993).

312. "Characteristics of Vinyl Iodide Microwave Plasma Etching of GaAs/AlGaAs and InP/InGaAs Heterostructures," U. Chakrabarti, S.J. Pearton, W.S. Hobson and C.R. Abernathy, Plasma Chem. Plasma Proc. 11, 332 (1993).

313. "Damage Introduc tion in InP and InGaAs During Ar and H2 Plasma Exposure," S.J.

64

Pearton, F. Ren, C.R. Abernathy, W.S. Hobson, R. Rullowan, R. Esaqui and J. Lothian, Appl. Phys. Lett. 61, 586 (1992).

314. "Long Term Stability at 200°C of Implant-Isolated GaAs," F. Ren, S.J. Pearton, C.R. Abernathy, P. Wisk, T. Fullowan, J. Lothian and R. Esqui, Semicond. Sci. Technol. 8, 413 (1993).

315. "Reduction of Sidewall Roughness During Dry Etching of SiO 2," F. Ren, S.J. Pearton, J. Lothian, C.R. Abernathy and W. Hobson, J. Vac. Sci. Technol. B 10, 2407 (1992).

316. "Selective Regrowth of InP and GaAs by OMVPE and MOMBE Around Dry Etched Features," W.S. Hobson, S.J. Pearton, C.R. Abernathy, F. Ren and J. Lothian, J. Vac. Sci. Technol. B 11, 536 (1993).

317. "Directional Light Coupling from Microdisk Lasers," A. Levi, R. Slusher, S. McCall, J. Glass, S.J. Pearton and R. Logan, Appl. Phys. Lett. 62, 561 (1993).

318. "Dry-Processed Through-Wafer Via Holes for GaAs Power Devices," S.J. Pearton, F. Ren, A. Katz, J.R. Lothian, T.R. Fullowan and B. Tseng, J. Vac. Sci. Technol. B 11, 153 (1993).

319. "Kinetic Model for Hydrogen Reactions in B-doped Si," J.T. Borenstein, J.W. Corbett and S.J. Pearton, J. Appl. Phys. 73, 2751 (1993).

320. "Plasma Etching of III-V Semiconductor Thin Films," S.J. Pearton, F. Ren, T. Fullowan, A. Katz, W.S. Hobson, U.K. Chakrabarti and C.R. Abernathy, Mat. Chem. Phys. 32, 215 (1992).

321. "Damage Introduction in GaAs/AlGaAs and InGaAs/InP HBT Structures During ECR Plasma Processing," F. Ren, T.R. Fullowan, S.J. Pearton, J.R. Lothian, R. Esqui, C.R. Abernathy and W.S. Hobson, J. Vac. Sci. Technol. B 11, 1768 (1993).

322. "Dry and Wet Etching Characteristics of InN, AlN and GaN Deposited by ECR-MOMBE," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk and A. Katz, J. Vac. Sci. Technol. B 11, 1772 (1993).

323. "Improved Performance of C-doped GaAs Based HBTs Through Use of InGaP," C.R. Abernathy, F. Ren, P. Wisk, S.J. Pearton and R. Esqui, Appl. Phys. Lett. 61, 1092 (1992).

324. "Influence of Hydrogen Plasma Treatment and Proton Implantation on Electrical Properties of AlGaAsSb," A.Y. Polyakov, S. Eglash, A.G. Milnes, M. Ye, S.J. Pearton and R.G. Wilson, J. Appl. Phys. 73, 3510 (1993).

325. "InGaP/GaAs Single and Double HBTs Grown by OMVPE," W.S. Hobson, F. Ren, J. Lothian and S.J. Pearton, J. Appl. Phys. 73, 3510 (1993).

326. "Growth of InP Epitaxial Layers by RTLPMOCVD Using TBP," A. Katz, A. Feingold, N. Moriya, S. Nakahara, C.R. Abernathy, S.J. Pearton, M. Geva, F. Baiocchi, L. Luther and E. Lane, App. Phys. Lett. 63, 2958 (1993).

327. “Fabrication of Y-gate, Submicron Gte Length GaAs MESFETs,” F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, J. Vac. Sci. Technol. B 11, 2603 (1993).

328. "Y-gate Submicron Gate Length GaAs MESFETs," F. Ren, S.J. Pearton, J.R. Lothian and C.R. Abernathy, J. Vac. Sci. Technol. B 11, 1850 (1993).

329. "The Effects of Ionizing Radiation on GaAs/AlGaAs and InGaAs/AlInAs HBTs," S. Witmer, S. Mittleman, D. Behy, F. Ren, T. Fullowan, R. Kopf. C.R. Abernathy, S.J. Pearton, D. Humphrey, R. Montgomery, P. Smith, J. Kreskovsky and H. Grubin, Mat. Sci. Eng. B 20, 280 (1993).

330. "Ground State Energy Shift of Acceptor-H Complexes in Si and GaAs Under Hydrostatic Pressure," I. Veloarison, M. Stavola, Y. Cheng, S. Utring, G. Watkins, S.J. Pearton, C.R.

65

Abernathy and J. Lopata, Phys. Rev. B 47, 15237 (1993). 331. "Ion Implantation," S.J. Pearton, in Encyclopedia of Advanced Materials, ed. D. Bloor et

al. (Pergammon Press, Oxford 1994) pp. 1180-1186. 332. "Reactive Ion Etching and Plasma Etching of Compound Semiconductors," S.J. Pearton,

in Encyclopedia of Advanced Materials, ed. D. Bloor et al. (Pergammon Press, Oxford 1994) pp. 2203-2207.

333. "Ion Implantation of Semiconductors," S.J. Pearton, in Encyclopedia of Advanced Materials, ed. D. Bloor et al. (Pergammon Press, Oxford 1994) pp. 1175-180.

334. "Rapid Thermal Annealing of Semiconductors," S.J. Pearton and A. Katz, in Encyclopedia of Advanced Materials, ed. D. Bloor et al. (Pergammon Press, Oxford 1994) pp. 2203-2207.

335. "Carbon-doped 11LD 0.98 µm Lasers," R. Bylsma, W. Hobson, J. Lopata, M. Geva, M. Asom, S.J. Pearton, P. Thomas, M. Washington, P. Birdenbaugh and D. Witt, J. Appl. Phys. 76, 590 (1994).

336. “Low Temperature Cl2-based Dry Etching of III-V Semiconductors,” S.J. Pearton, C.R. Abernathy, R.F. Kopf and F. Ren, J. Electrochem. Soc. 141, 2250 (1994).

337. "Reversible Changes in Doping of InGaAlN Alloys Induced by Ion Implantation or Hydrogenation," S.J. Pearton, C.R. Abernathy, P. Wisk, W. Hobson and F. Ren, Appl. Phys. Lett. 63, 1143 (1993).

338. "Ion Implantation and Dry Etching Characteristics of InGaAsP(λ = 1.3 µm)," S.J. Pearton, C.R. Abernathy, P. Wisk and F. Ren, J. Appl. Phys. 74, 1610 (1993).

339. "Self-aligned InGaP/GaAs HBTs for Microwave Power Applications," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, P. Wisk, T. Fullowan, Y. Chen, L. Yang, S. Fu and H. Lin, IEEE Electron. Dev. Lett. EDL 14, 332 (1993).

340. "Threshold Characteristics of Semiconductor Microdisk Lasers," R.E. Slusher, A. Levi, U. Mohideen, S. McCall, S.J. Pearton and R. Logan, Appl. Phys. Lett. 63, 1310 (1993).

341. "Dry Etching of Via Connections for InP Power Devices," C. Constantine, C. Barraff, S.J. Pearton, F. Ren, J. Lothian, W. Hobson, A. Katz, L. Yang and P.C. Chao, Electronics Lett. 29, 984 (1993).

342. "Optical Emission Spectroscopy of ECR Discharges for III-V Semiconductor Processing," S.J. Pearton, T. Keel, A. Katz and F. Ren, Semicond. Sci. Technol. 8, 1889 (1993).

343. "Temperature Dependent Dry Etching Characteristics of III-V Semiconductors in HBr- and HI-based Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Plasma Chem. Plasma Proc. 14, 131 (1994).

344. "Growth of InGaP by MOMBE Using Novel Ga Sources,” C.R. Abernathy, P. Wisk, F. Ren, S.J. Pearton, A. Jones and A. Rushworth, J. Appl. Phys. 73, 2283 (1993).

345. "Low Bias Dry Etching of W and Dielectric Layers on GaAs," S.J. Pearton, F. Ren and C.R. Abernathy, Semicond. Sci. Technol. 14, 505 (1994).

346. "Another Step in Developing a Single Wafer Integrated Process: RTLPMOCVD of Local Diffused W(Zn) Contacts," A. Katz, A. Feingold, N. Moriya, S.J. Pearton, A. Rusby, J. Kovalchick, C.R. Abernathy, M. Geva and E. Lane, Semicond. Sci. Technol. 8, 1445 (1993).

347. "Dry Surface Cleaning of Plasma-Etched HEMTs," S.J. Pearton, F. Ren, A. Katz, U. Chakrabarti, E. Lane, W. Hobson, R. Kopf, C.R. Abernathy, C.S. Wu, C. Bohling and

66

J.C. Ivankovits, J. Vac. Sci. Technol. B 11, 546 (1993). 348. "Passivation of C-doped GaAs by Hydrogen Introduced by Annealing and Growth

Ambients," D. Kozuch, M. Stavola, S.J. Pearton, C.R. Abernathy and W.S. Hobson, J. Appl. Phys. 73, 3716 (1993).

349. "Dry Etching of Thin Film InN, AlN and GaN," S.J. Pearton, C.R. Abernathy, F. Ren, J. Lothian, P. Wisk, A. Katz and C. Constantine, Semicond. Sci. Technol. 8, 310 (1993).

350. "The Influence of Hydrogen Plasma Treatment and Proton Implantation on the Electrical Properties of InAs," A. Polyakov, M. Ye, S.J. Pearton, R.G. Wilson, A.G. Milnes, M. Stam and J. Erickson, J. Appl. Phys. 73, 2882 (1993).

351. "The Role of the As Source in Selective Epitaxial Growth of GaAs and AlGa As by MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren, P. Wisk, J. Lothian, D. Bohling and G. Muhr, Semicond. Sci. Technol. 8, 979 (1993).

352. "Small Area InGaP Emitter, Carbon-Doped Base HBTs Grown by MOMBE," F. Ren, C.R. Abernathy, S.J. Pearton, J. Lothian, S. Chu, P. Wisk, T. Fullowan, B. Tseng and Y.K. Chen, Electronics Lett. 28, 2250 (1992).

353. "Anisotropic Dry Etching of Submicron W. Features Using a Ti Mask," T. Fullowan, S.J. Pearton, F. Ren, G. Mahoney and R. Kostelak, Semicond. Sci. Technol. 7, 1489 (1992).

354. "Alternative Group V Sources for Growth of GaAs and AlGaAs by MOMBE," C.R. Abernathy, P. Wisk, S.J. Pearton, F. Ren, D.A. Bohling and G. Muhr, J. Cryst. Growth 124, 664 (1992).

355. "Growth of InN of Ohmic Contact Formation by ECR-MOMBE," C.R. Abernathy, S.J. Pearton, F. Ren and P. Wisk, J. Vac. Sci. Technol. B 11, 179 (1993).

356. "Room Temperature Lasing Action in InGaP/InGaAs Microcylinder Laser Diodes," A. Levi, R.E. Slusher, S.L. McCall, S.J. Pearton and W.S. Hobson, Appl. Phys. Lett. 62, 2021 (1993).

357. "Symmetry, Stress Alignment and Reorientation Kinetics of the SiAs-H Complexes in GaAs," D.M. Kozuch, M. Stavola, S. Spector, S.J. Pearton and J. Lopata, Phys. Rev. B 48, 8751 (1993).

358. "Surface Recombination Velocities on Processed InGaP P-N Junctions," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy, R.L. Masatis and U.K. Chakrabarti, Appl. Phys. Lett. 63, 3610 (1993).

359. “TaN Thin Films as Resistors on CVD Diamond Substrates,” A. Katz, S.J.. Pearton, S. Nakahara, F. Baiocchi, E. Lane and J. Kovalchick, J. Appl. Phys. 73, 5208 (1993)

360. "Formation of Narrow, Dry-Etched Mesas for Long Wavelength InP-InGaAsP Lasers," F. Ren, S.J. Pearton, B. Tseng, J.R. Lothian, B. Segner and C. Constantine, J. Electrochem. Soc. 140, 3286 (1993).

361. "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR Cl2/CH2/H2/Ar Discharges," S.J. Pearton, W.S. Hobson, F. Ren, C.R. Abernathy and C. Constantine, J. Mater. Sci.: Mat. in Electronics 5, 185 (1994).

362. "Enhanced Etch Rates of Tri-Level Resist Stacks in Microwave Discharges," S.J. Pearton, F. Ren and C.R. Abernathy, Semicond. Sci. Technol. 8, 1905 (1993).

363. "Optical Emission End Point Detection for Via Hole Etching in InP and GaAs Power Device Structures," S.J. Pearton, F. Ren, C.R. Abernathy and C. Constantine, Mat. Sci. Eng. B 25, 36 (1994).

364. "Defects and Ion Redistribution in Implant-Isolated GaAs-based Device Structures," S.J. Pearton, F. Ren, S. Chu., C.R. Abernathy, W.S. Hobson and R. Elliman, J. Appl. Phys.

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74, 6580 (1993). 365. "Ion Implantation in III-V Device Technology, S.J. Pearton, Int. J. Mod. Phys. B 7, 4687

(1993). 366. “Dry Etching and Implantation Characteristics of Al0.5Ga0.5P," S.J. Pearton, C.R

Abernathy And F. Ren, Appl. Phys. Lett. 64, 3015 (1994). 367. “Plasma-induced Damage and Hydrogenation of AlGaP,” J.W. Lee, C. Santana, C.R.

Abernathy, S.J. Pearton and K.S. Jones, Solid State Elecctron. 39, 1 (1996). 368. "Diffusion of H2 in n-type Si," S.J. Pearton, Mat. Sci. Eng. B 23, 130 (1994) 369. "Thermal Stability of Ti/Pt/Au Nonalloyed Ohmic Contacts on InN," F. Ren, C.R.

Abernathy, S. J. Pearton and P. Wisk, Appl. Phys. Lett. 64 1508 (1994) 370. "Low Bias Plasma Etching of GaN, AlN and InN," S.J. Pearton, C.R. Abernathy and F.

Ren, Appl. Phys. Lett. 64 ,2294 (1994) 371. "Electrical Passivation in Hydrogen Plasma Exposed GaN," S.J. Pearton, C.R. Abernathy

and F. Ren, Electronics Lett. 30, 527 (1994) 372. "Hydrogenation of GaN, AlN and InN," J.M. Zavada, R.G. Wilson. C.R. Abernathy and

S.J. Pearton, Appl. Phys. Lett. 64, 3086 (1994) 373. "Diffusion of H in Semiconductors and its Association with Defects," S.J. Pearton, C.R.

Abernathy and F. Ren, Defect & Diffusion Forum 111/112, 1 (1994) 374. "Aligned Defect Complex Containing C and H in As-Grown GaAs Epitaxial Layers," Y.

Cheng, M. Stavola, C.R. Abernathy, S.J. Pearton and W.S. Hobson, Phys. Rev. B 49, 2469 (1994)

375. "Science of Dry Etching of III-V Materials," S.J. Pearton and F. Ren, J. Mater. Sci - Materials in Electronics 5, 1 (1994)

376. "Comparison of Surface Recombination Velocities in InGaP and AlGaAs Mesa Diodes," S.J. Pearton, F. Ren, W.S. Hobson, C.R. Abernathy and V.K. Chakrabarti, J. Vac. Sci. Technol. B 12, 142 (1994)

377. "Comparison of Plasma Chemistries for Patterning InP-Based Laser Structures," S.J. Pearton, W.S. Hobson and A.F.J. Levi, Plasma Sources Sci & Technol. 3, 19 (1994)

378. “Dry Etch, Integrated Processing for Micro and Optoelectronics,” S.J. Pearton and A. Katz, Micro. Eng. 25, 277 (1994).

379. "Improved Performance of Quantum Well IR Photodetection Using Random Scattering Optical Coupling," G. Sarusi, B. Levine, S.J. Pearton, K. Bandara and R. Leibenguth, Appl. Phys. Lett. 64, 960 (1994)

380. "Fabrication of GaN Nanostructures by a Sidewall-Etchback Process," S.J. Pearton, F. Ren, C.R. Abernathy and J.R. Coblisan, Semicond. Sci. Technol 9, 338 (1994)

381. "Low Temperature ECR Plasma Etching of GaAs, AlGaAs and GaSb in Cl2/Ar," S.J. Pearton, F. Ren and C.R. Abernathy, Appl. Phys. Lett. 64, 1673 (1994)

382. "GaAs/AlGaAs Microdisk Lasers," U. Mohideen, W.S. Hobson, S.J. Pearton, F. Ren and R.E. Slusher, Appl. Phys. Lett. 64, 1911 (1994)

383. "Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP,” J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electron. 39, 1109 (1996).

384. "Hydrogen in III-V Compound Semiconductors," S. J. Pearton, Mat. Sci. For. 148/149, 393 (1994).

385. "Hydrogenation of III-V Semiconductors During Processing,," S. J. Pearton, Mat. Sci. For. 148/149, 113 (1994).

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386. "Hydrogen Passivation Effects in InGaA1P and InGaP," V. Gorbylev, A. Polyakov, S. J. Pearton, R. G. Wilson, A. Milnes and B. Leiferov, J. Appl. Phys. 68, 4516 (1994).

387. "Carbon Doped Impurity Layer Disorder 0.98µm Lasers," R. Bylsma, W. S. Hobson, J. Lopata, G. Zydzik, M. Geva, M. Asom, S. J. Pearton, P. Thomas, M. Washington and D. Witt, J. Appl. Phys. 76, 590 (1994)

388. "Dry Etched Mesas for Buried Heterostructure InGaAsP/InP Lasers Using ECR CL2/CH4/H2/Ar Discharges," S. J. Pearton, W. S. Hobson, F. Ren, C. R. Abernathy and C. Constantine, J. Mat. Sci. - Mat. in Electronics 5, 185 (1994)

389. "Comparison of Multipolar and Magnetic Mirror ECR Sources for CH4/H2 Dry Etching of III-V Semiconductors," S. J. Pearton, C. R. Abernathy, R. Kopf, F. Ren and W. S. Hobson, J. Vac. Sci. Technol. B 12, 1333 (1994)

390. “SiNx/Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, V. Mohideen, S.J. Pearton, R.E. Sluster and F. Ren, Electron. Lett. 29, 2129 (1993).

391. "Use of Sn-doped GaAs for Non-alloyed Ohmic Contacts to HEMTs," F. Ren, A. Y. Cho, D. L. Sivco, S. J. Pearton and C. R. Abernathy, Electronics Lett. 30, 912 (1994).

392. “Room Temperature Operation of a Submicron Radius Disk Laser,” A.F.J. Levi, S. McCall, S.J. Pearton and R.A. Cooper, Electron. Lett. 29, 1666 (1993).

393. “Single Electron Capacitance Spectroscopy of a Few Electron Box,” R.C. Ashoori, H.L. Stouner, J. Weiner, L.N. Pfeiffer, S.J. Pearton, K. Baldwin and K.W. West, Physicia B 189, 117 (1993).

394. “Hydrogen in Crystalline Semiconductors: Part I: Silicon,” S.J. Pearton, Int. J. Mod. Phys. B 8, 1093 (1994).

395. “Hydrogen in Crystalline Semiconductors: Part II: III-V Compounds,” S.J. Pearton, Int. J. Mod. Phys. B 8, 1247 (1994).

396. "Dry Etch Gate Recess High Breakdown Voltage Power HEMTs," C. S. Wu, F. Ren, S. J. Pearton, M. Hu, C. Rao and R. Wang, Electronics Lett. 30, 1803 (1994).

397. "Carbon-doped GaAs Grown by OMVPE Using TDMAs and CCl4," W. S. Hobson, Z. Zheng, M. Stavola and S. J. Pearton, J. Cryst. Growth 143, 124 (1994).

398. "New Dry Etch Chemistries for III-V Semiconductors," S. J. Pearton, U. K. Chakrabarti, F. Ren, C. R. Abernathy, A. Katz, W. S. Hobson and C. Constantine, Mat. Sci. Eng. B 25, 179 (1994).

399. "Dry Patterning of InGaN and InAlN," S. J. Pearton, C. R. Abernathy and F. Ren, Appl. Phys. Lett. 64, 3643 (1994).

400. "Ar+ Ion Milling Characteristics of III-V Nitrides," S. J. Pearton, C. R. Abernathy and F. Ren and J. Lothian, J. Appl. Phys. 76, 1210 (1994).

401. "Low Energy, Ion Enhanced Etching of III-V's for Nanodevice Applications," S. J. Pearton, J. Vac. Sci. Technol. A 12,1966 (1994).

402. “Effect of Substrate Temperature on Dry Etching of InP, GaAs and AlGaAs in I2 and Br2 Plasmas,” U.K. Chakrabarti, F. Ren, S.J. Pearton and C.R. Abernathy, J. Vac. Sci. Technol. A 12, 1966 (1994).

403. “Reactive Ion Etching of III-V Semiconductors,” S.J. Pearton, Int. J. Mod. Phys. B 8, 1781 (1994).

404. “High Resolution Dry Etching of III-V Semiconductor Materials Using Magnetically Enhanced Discharges,” S.J. Pearton, Mat. Sci. Eng. B 27, 61 (1994).

405. “Hydrogen Passivation Effects in Quaternary Solid Solutions of InGaAsSb Lattice Matched to GaSb,” A. Polyakov, N. Smirnov, A. Milnes, S.J. Pearton and A. Balashnov,

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Mat. Sci. Eng. B 27, 137 (1994). 406. "ECR Plasma Etching of GaN, AlN and InN," S. J. Pearton, C. R. Abernathy and C. B.

Vartuli, Electronics Lett. 30 , 1985 (1994). 407. "Low Resistance Ohmic Contacts on N+ Ion Bombarded InP," F. Ren, S. J. Pearton, J.

Lothian, W. Chu. R. G. Wilson, C. R. Abernathy and S. S. Pei, Appl. Phys. Lett. 65, 2165 (1994).

408. "The Impact of Impurity Incorporation on HBTs Grown by MOMBE," C. R. Abernathy, F. Ren, S. J. Pearton, P. Wisk, D. Bohling, G. Muhr, A. C. Jones, M. Stavola and D. Kozuch, J. Cryst. Growth 136, 11 (1994).

409. "1.54µm Photoluminescence from Er- implanted GaN and AlN," R. G. Wilson, R. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu and J. M. Zavada, Appl. Phys. Lett. 65, 992 (1994).

410. "Structural Characterization of GaN and GaAsN Grown by ECR-MOMBE," S. Bharatan, K. S. Jones, C. R. Abernathy, S. J. Pearton, F. Ren, P. Wisk and J. Lothian, J. Vac. Sci. Technol. A 12, 1094 (1994).

411. "InP-based Single HBTs with Improved Breakdown Characteristics," F. Ren, C. R. Abernathy, S. J. Pearton and P. Wisk, Electronics Lett. 30, 1184 (1994).

412. “RTCVD of InGaAs using TBA,” A. Katz, A. Feingold, S.J. Pearton, M Geva, L. Luther and E. Lane, Appl. Phys. Lett. 63, 2679 (1993)

413. "Comparison of H+ and He+ Implant Isolation of GaAs Based HBTs," S. J. Pearton, C. R. Abernathy, J. W. Lee, F. Ren and C. S. Wu, J. Vac. Sci. Technol. B 13, 15 (1995).

414. "Annealing Behavior of AlGaAs : C Grown by MOMBE," J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, and S. N. G. Chu, Appl. Phys. Lett. 66, 1397 (1995).

415. "Use of InN for Ohmic Contacts on GaAs/AlGaAs HBTs,” F. Ren, C. R. Abernathy, S. N. G. Chu, J. R. Coblisan and S. J. Pearton, Appl. Phys. Lett. 66, 1503 (1995).

416. "Thermal Stability of Deuterium in InAlN and InGaAlN," S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. G. Wilson, F. Ren and J. M. Zavada, Electronics Lett. 31, 327 (1995).

417. "Electrical and Structural Properties of InGaN on GaAs," C. R. Abernathy, J. D. MacKenzie, S. R. Bharatan, K. S. Jones and S. J. Pearton, Appl. Phys. Lett. 66, 1632 (1995).

418. "High Temperature ECR Etching of GaN, InN and AlN," R. J. Shul, S. D Kilcoyne, M. Crawford, J. Parmeter, C. B. Vartuli, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett. 66, 1761 (1995).

419. "Effect of Ion Energy on Hydrogen Diffusion in n- and p-type GaAs,” S. J. Pearton, C. R. Abernathy, R. G. Wilson, F. Ren, and J. M. Zavada, Electronics Lett. 31, 496 (1995).

420. "CCl4 Doping of GaN Grown by MOMBE," C. R. Abernathy, J. D. MacKenzie, S. J. Pearton, and W. S. Hobson, Appl. Phys. Lett. 66, 1909 (1995)

421. "Thermal Stability of Implanted Dopants in GaN," R. G. Wilson, S. J. Pearton, C. R. Abernathy, and J. M. Zavada, Appl. Phys. Lett. 66, 2351 (1995).

422. "Low Temperature Dry Etching of Tungsten Metal, Dielectric and Tri- level Resist Layers on GaAs", S. J. Pearton, C. R. Abernathy, F. Ren, J. Lothian and R. Kopf, Plasma Chemistry and Plasma Processing 14, 505 (1994).

423. “Use of Ti in Ohmic Metal Contacts to p-GaAs," F. Ren, S. J. Pearton, C. R. Abernathy, and J. R. Lothian, J. Vac. Sci. Technol. B 13, 863 (1995).

424. "Dry Etching and Implantation Characteristics of III-N Alloys," S.J. Pearton, C.B.

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Vartuli, R.J. Shul and J.C. Zolper, Mat. Sci. Eng. B 31, 309 (1995). 425. "Effects of Proton Implantation and Hydrogen Plasma Passivation on Electrical

Properties of InGaAlP and InGaP," A.Y. Polyakov, A.G. Milnes, S.J. Pearton, R.G. Wilson and A. Markov, Solid State Electron 38, 1131 (1995).

426. "The Role of Hydrogen in Current-Induced Degradation of C-Doped GaAs/AlGaAs HBTs," F. Ren, C.R. Abernathy, S. Chu, J. Coblisan and S.J. Pearton, Solid State Electron 38, 1137 (1995).

427. "Nitrogen and Fluoride in Implantation in InGaN," J.C. Zolper, S.J. Pearton, C.R. Abernathy and C.B. Vartuli, Applied Physics Letters 66, 3042 (1995).

428. "High Etch rates of GaN with Magnetron RIE in BCl3 Plasmas," G.F. McLane, L. Cases, S.J. Pearton and C.R. Abernathy, Applied Physics Letters 66, 3328 (1995).

429. "Luminescence Polarization and Spin Relaxation in GaAs Grown on Si and in InP," G. Bacquet, F. Hassen, C. Fontaine, W.S. Hobson and S.J. Pearton, Solid State Electron 38, 1523 (1995).

430. "Outdiffusion of Deuterium from GaN, AlN and InN," R.G. Wilson, S.J. Pearton, C.R. Abernathy and J.M. Zavada, J. Va. Sci. Technol. A 13, 719 (1995).

431. "Wet Chemical Etching in AlInP," J.W. Lee, S.J. Pearton, C.R. Abernathy, E. Hobson, F. Ren and C.S. Wu, J. Electrochem. Soc. 142, 100 (1995).

432. "Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry Etching," F. Ren, S.J. Pearton, C.R. Abernathy and J. Collian, J. Va. Sci. Technol. A 13, 753 (1995).

433. "High Density, Low Temperature Dry Etching in GaAs and InP Device Technology," S.J. Pearton, C.R. Abernathy and F. Ren, J. Vac. Sci. Technol. A 13, 849 (1995).

434. “SiN Encapsulation of Sulfide Passivated GaAs/AlGaAs Microdisk Lasers," W.S. Hobson, F. Ren, R. Slusher and S.J. Pearton, J. Va. Sci. Technol. A 13, 642 (1995).

435. "Magnetron RIE of AlN and InN in BCl3 Plasmas," G.F. McLane, L. Casus, R. Lareau,, D. Eckart, C.B. Vartuli, S.J. Pearton and C.R. Abernathy, J. Va. Sci. Technol. A 13, 724 (1995).

436. "Growth of AlN by MOMBE," J.D. MacKenzie, C.R. Abernathy, V. Krishnanmoorthy, S. Bharatan, K.S. Jones and S.J. Pearton, Appl. Phys. Lett. 67, 253 (1995).

437. "Wet Chemical Etching of AlN," J.R. Mileham, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.J. Shul and S.P. Kilcoyne, Appl. Phys. Lett. 67, 1119 (1995).

438. "Ion Implantation Doping and Isolation of GaN," S.J. Pearton, C.B. Vartuli, J.C. Zolper and R.A. Stall, Appl. Phys. Lett. 67, 1435 (1995).

439. "Investigation of n- and p-type Doping of GaN During Growth in a Multiwafer Reactor," C. Yian, A.G. Thompson, W. Mayo, R.M. Kolbas and S.J. Pearton, J. Vac. Sci. Technol. B 13, 2075 (1995).

440. "Investigation of Wet Etching Solutions for InGaP," J.W. Lee, S.J. Pearton, C.R. Abernathy, W. Hobson, F. Ren and C.S. Wu, Solid State Electron 38, 1871 (1995).

441. "Etching of GaAs/AlGaAs Rib Waveguide Structures Using BCl3/Cl2/N2/Ar ECR Plasmas," C. Constantine, R.J. Shul, M. Snipes, M. Hafich, C.J. Fuller, J.R. Mileham and S.J. Pearton, J. Va. Sci. Technol. B 13, 2025 (1995).

442. "High Rate ECR Etching of GaN, InN and AlN," R.J. Shul, A.J. Howard, S.J. Pearton, C.R. Abernathy, C. Vartuli, P. Barnes and M. Bozak, J. Vac. Sci. Technol. B 13, 2016 (1995).

443. "Implantation and Redistribution of Dopants and Isolation Species in GaN and Related

71

Compounds," R.G. Wilson, C. Vartuli, C.R. Abernathy, S.J. Pearton and J.M. Zavada, Solid State Electron 38, 1329 (1995).

444. "Dry Etch Damage in InN, InGaN and InAlN," S.J. Pearton, J.W. Lee, J. D. MacKenzie, C.R. Abernathy and R.J. Shul, Appl. Phys. Lett. 67, 2329 (1995).

445. "Attenuation Losses in ECR Plasma Etched AlGaAs Waveguides," R.J. Shul, C.T. Sullivan, M. Hatich, C.T. Fuller, C. Constantine, J.W. Lee and S.J. Pearton, Solid State Electron 38, 2047 (1995).

446. "Effect of ECR Plasma in the Luminescence Efficiency of InGaAs and InP," F. Ren, D. Buckley, K. Lee, S.J. Pearton, C. Constantine, W.S. Hobson, R.A. Hamm and P.C. Chao, Solid State Electron 38, 2011 (1995).

447. "High Quality p-type GaN Deposition on C-Al2O3 in a Multiwafer Reactor," C. Yuan, C. Chen, R. Stall, Y. Lu, S.J. Pearton and R.M. Kolbas, J. Electrochem. Soc. 142, L163 (1995).

448. “Hydrogenation of InN and InGaN," J.W. Lee, S.J. Pearton, J.D. MacKenzie and C.R. Abernathy, Electron Lett. 31, 1512 (1995).

449. "High Rate Dry Etching of InGaP In BCl3 Plasma Chemistries," F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, J. Caballero, S.J. Pearton and M. Cole, Appl. Phys. Lett. 67, 2497 (1995).

450. "Damage Introduction in InGaP by ECR Ar Plasmas," J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Appl. Phys. Lett. 67, 31289 (1995).

451. "Implant Isolation of InAlN and InGaN," C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie and J.C. Zolper, J. Vac. Sci. Technol. B 13, 2708 (1995).

452. "Fabrication of Self-aligned GaAs/AlGaAs and GaAs/InGaP Power HBTs," F. Ren, J. Lothian, S.J. Pearton, C.R. Abernathy, D. Wisk, Y. C. Chen, H. Lin and T. Henry, J. Vac. Sci. Technol. B 12, 2916 (1994).

453. "Optimization of 2D Gratings for Very Long Wavelength QWIPs," G. Sarvsi, B. Levine, S.J. Pearton, K. Bandara and J. Anderson, J. Appl. Phys. 76, 4989 (1994).

454. "Dopant Passivation Occur ring During ECR CH4/H2 Dry Etching of InGaAs/AlInAs HEMTs," F. Ren, A. Cho., J. Kuo, S.J. Pearton, J. Colbian, D. Sivco, R.G. Wilson and Y.K. Chen, Electronics Lett. 31, 406 (1995).

455. "Hydrogen Incorporation in GaN, AlN and InN During Cl2/CH4/H2/Ar ECR Plasma Etching," S.J. Pearton, C.R. Abernathy, C.B. Vartuli, R.J. Shul, R.G. Wilson and J.M. Zavada, Electronics Lett. 31, 834 (1995).

456. "High Efficiency Microwave Power AlGaAs/InGaAs of HEMTs Fabricated by Dry Etch Single Gate Recess," C.S. Wu, F. Ren, S.J. Pearton, M. Hu, C.K. Puo and R.F. Wang, IEEE Trans. Electron. Dev. 42, 1419 (1995).

457. "Novel Fabrication of Self-Aligned GaAs/AlGaAs and GaAs/InGaP Microwave Power HBTs," F. Ren, C.R. Abernathy, S.J. Pearton, L.W. Yang and S.T. Tu, Solid State Electron 38, 1635 (1995).

458. “Low Temperature RTCVD of Zn-doped InP using TBP,” A. Katz, A. Feingold, S.J. Pearton, N. Moriya, A. Baiocchi and M. Gera, Appl. Phys. Lett. 63, 2546 (1993).

459. “Comparison of Dry Etching Techniques for III-V Semiconductors in CH4/H2/Ar Plasmas,” S.J. Pearton, J.W. Lee, E.S. Lambers, C.R. Abernathy, F. Ren, W.S. Hobson and R.J. Shul, J. Electrochem. Soc. 143, 752 (1996).

460. “High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar,” S.J. Pearton, J.W. Lee, E.S. Lambers, J.R. Mileham, C.R. Abernathy, F. Ren, W.S. Hobson

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and R.J. Shul, J. Vac. Sci. Technol. B 14, 118 (1996). 461. “High Ion Density Plasma Etching of InGaP, AlInP and AlGaP in CH4/H2/Ar,” J.W. Lee,

S.J. Pearton, C. Santana, J.R. Mileham, E.S. Lambers, C.R. Abernathy, F. Ren and W.S. Hobson, J. Electrochem. Soc. 143, 1093 (1996).

462. “Etching of InP at >1µm/min in Cl2/Ar Plasma Chemistries,” J.W. Lee, J. Hong and S.J. Pearton, Appl. Phys. Lett. 68, 847 (1996).

463. “Carbon Implantation in AlGaAs,” S.J. Pearton and C.R. Abernathy, Appl. Phys. Lett. 68, 1793 (1996).

464. “Ca and O Ion Implantation Doping of GaN,” J.C. Zolper, R.G. Wilson, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 68, 1945 (1996).

465. “Hydrogen Passivation of Ca Acceptors in GaN,” J.W. Lee, S.J. Pearton, J.C. Zolper and R.A. Stall, Appl. Phys. Lett. 68, 2102 (1996).

466. “Ion Implanted GaN JFET,” J.C. Zolper, R.J. Shul, A.G. Baca, R.G. Wilson, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 68, 2273 (1996).

467. “Minority Carrier Enhanced Reactivation of Hydrogen-Passivated Mg in GaN,” S.J. Pearton, J.W. Lee and C. Yuan, Appl. Phys. Lett. 68, 2690 (1996).

468. “Thermal Stability of Dry Etch Damage in SiC,” S.J. Pearton, J.W. Lee, J.M. Grow, M. Bhaskaran and F. Ren, Appl. Phys. Lett. 68, 2987 (1996).

469. “ECR Etching of InP and Related Materials in BCl3,” F. Ren, W.S. Hobson, J.M. Kuo, J.R. Lothian, J. Lopata, S.J. Pearton and J.A. Caballero, Solid State Electron. 39, 695 (1996).

470. “Passivation of C Doping in InGaAs During ECR-CVD of SiN,” F. Ren, R. Hamm, J. Lothian, R.G. Wilson and S.J. Pearton, Solid State Electron. 38, 263 (1996).

471. “A Surface Modification Study of InGaP Etched with an ECR Source at Variable Powers,” M.W. Cole, W. Han, R. Pfeiffer, F. Ren, W. Hobson, J. Lothian, J. Caballero and S.J. Pearton, J. Appl. Phys. 79, 3286 (1996).

472. “Process Development for III-V Nitrides,” S.J. Pearton, C.R. Abernathy, F. Ren, R.J. Shul, J.C. Zolper, R.G. Wilson and J.M. Zavada, Mat. Sci. Eng. B 38, 138 (1996).

473. “Investigation of Masking Materials for High Ion Density Cl2/Ar Plasma Etching of GaAs,” J.W. Lee and S.J. Pearton, Semicond. Sci. Technol. 11, 612 (1996).

474. “The Incorporation of H into III-V Nitrides During Processing,” S.J. Pearton, R.J. Shul, R.G. Wilson, F. Ren, J. Zavada, C.R. Abernathy, C. Vartuli, J.W. Lee, J.R. Mileham and J.D. MacKenzie, J. Electron. Mater. 25, 845 (1996).

475. “Ion Implantation and RTP of III-V Nitrides,” J.C. Zolper, M.H. Crawford, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, C. Yuan and R.A. Stall, J. Electron. Mater. 25, 839 (1996).

476. “Growth and Fabrication of GaN-InGaN Microdisk Laser Structures,” C.R. Abernathy, S.J. Pearton, J.D. MacKenzie, J.R. Mileham, S. Bharahan, V. Krishnanmoorthy, K.S. Jones, R.J. Shul, J.M. Zavada, D. Zheng and R. Kolbas, Solid State Electron. 39, 111 (1996).

477. “Wet Chemical Etch Solutions for AlGaP,” J.W. Lee, C. Santana, C.R. Abernathy, S.J. Pearton and F. Ren, J. Electrochem. Soc. 143, L1 (1996).

478. “Cl2-based Dry Etching of GaAs, AlGaAs and GaP,” J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, J. Electrochem. Soc. 143, 2010 (1996).

479. “Patterning of AlN, InN and GaN in KOH-based Solutions,” J. Mileham, S.J. Pearton, C.R. Abernathy and R.J. Shul, J. Vac. Sci. Technol. A 14, 836 (1996).

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480. “High Ion Density Etching of III-V Nitrides,” C.B. Vartuli, S.J. Pearton, C.R. Abernathy, R.J. Shul, A.J. Howard, S. Kilcoyne, J. Parmeter and M.H. Crawford, J. Vac. Sci. Technol. A 14, 1011 (1996).

481. “Magnetron RIE of Group III-Nitride Ternary Alloys,” G.F. McLane, T. Monahan, D. Eckart, S.J. Pearton and C.R. Abernathy, J. Vac. Sci. Technol. A 14, 1046 (1996).

482. “Initial Growth Stages of AlXGa1-XP on Epitaxial Silicon,” C.J. Santana, C.R. Abernathy, S.J. Pearton and K.S. Jones, J. Cryst. Growth 164, 248 (1996).

483. “Comparison of Masking Materials for High Microwave Power CH4/H2/Ar Etching of III-V Semiconductors,” J.W. Lee, R.V. Crockett and S.J. Pearton, J. Vac. Sci. Technol. B14, 1752 (1996).

484. “BCl3/N2 Dry Etching of InP, InAlP and InGaP,” F. Ren, J. Lothian, J.M. Kuo, W.S. Hobson, J. Lopata, J.A. Caballero, S.J. Pearton and M.W. Cole, J. Vac. Sci. Technol. B 14, 1758 (1996).

485. “Thermal Stability of W Ohmic Contacts to n-type GaN,” M.W. Cole, D. Eckert, W.Y. Chan, R.L. Pfeiffer, T. Monahan, F. Ren, C. Yuan, R.A. Stall, S.J. Pearton, Y. Li and Y. Lu, J. Appl. Phys. 80, 278 (1996).

486. “Dry Etching of InGaP and AlInP in CH4/H2/Ar,” J.W. Lee, S.J. Pearton, C. Santana, E. Lambers, C.R. Abernathy, W.S. Hobson and F. Ren, Plasma Chem. Plasma Proc. 16, 365 (1996).

487. “Ar Plasma-Induced Damage in AlGaAs,” R.R. Stradtmann, J.W. Lee, C.R. Abernathy, S.J. Pearton and C.R. Abernathy, J. Electrochem. Soc. 143, L219 (1996).

488. “Effect of BCl3 Dry Etching on InAlN Surface Properties,” F. Ren, J. Lothian, Y.K. Chen, J.D. MacKenzie, S.M. Donovan, C.B. Vartuli, CR. Abernathy, J.W. Lee and S.J. Pearton, J. Electrochem. Soc. 143, l217 (1996).

489. “Comparison of Dry Etch Techniques for GaN,” R.J. Shul, G.B. McClellan, S.J. Pearton, C.R. Abernathy, C. Constantine and C. Barratt, Electron. Lett. 32, 1408 (1996).

490. “Sputtered AlN Encapsulant for High Temperature Annealing of GaN,” J.C. Zolper, D. Rieger, A.G. Baca, S.J. Pearton, J.W. Lee and R.A. Stall, Appl. Phys. Lett. 69, 538 (1996).

491. “Dry Etching of InGaAlP Alloys in Cl2/Ar High Ion Density Plasmas,” J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, C. Santana, S.J. Pearton, W.S. Hobson and R. Ren, J. Electron. Mater. 25, 1428 (1996).

492. “Comparison of BCl3/Ar and BCl3/N2 Plasma Chemistries for Dry Etching of InGaArP Alloys,” J. Hong, J.W. Lee, C.J. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Semicond. Sci. Technol. 11, 1218 (1996).

493. “Cl2/Ar Plasma Etching of Binary, Ternary and Quaternary In-based Compound Semiconductors,” J.W. Lee, J. Hong, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, J. Vac. Sci. Technol. B 14, 2567 (1996).

494. “Microstructural Stability of Ohmic Contacts to InxGa1-xN,” A. Durbha, S.J. Pearton, C.R. Abernathy, J.W. Lee, P.H. Holloway and F. Ren, J. Vac. Sci. Technol. B 14, 2582 (1996).

495. “Si, Be and C Ion Implantation in GaAs0.93P0.07,” J.W. Lee, K.N. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson, H. Han and J.C. Zolper, J. Appl. Phys. 80, 2296 (1996).

496. “Inductively Coupled Plasma Etching of GaN,” R.J. Shul, G.B. McClellan, S.A. Casalnuovo, D.J. Rieger, S.J. Pearton, C. Constantine, C. Barratt, R.K. Karlicek, C. Tran and M. Schurmann, Appl. Phys. Lett. 69, 1119 (1996).

74

497. “Selective Dry Etching of III-V Nitrides in Cl2/Ar, CH4/H2/Ar, ICl/Ar and IBr/Ar,” C.B. Vartuli, S.J. Pearton, J.D. MacKenzie, C.R. Abernathy and R.J. Shul, J. Electrochem. Soc. 143, L246 (1996).

498. “Electrical Transport in p-GaN, n-InN and n-InGaN,” W. Geerts J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and T. Schmeidel, Solid State Electron. 39, 1289 (1996).

499. “C Implantation and Surface Degradation of InGaP,” C.B. Vartuli, C.R. Abernathy, S.J. Pearton, J.C. Zolper and A.J. Howard, J. Electron. Mater. 25, 1640 (1996).

500. “ICl/Ar ECR Plasma Etching of III-V Nitrides,” C.B. Vartuli, S.J. Pearton, J.W. Lee, J. Hong, J.D. MacKenzie, C.R. Abernathy and R.J. Shul, Appl. Phys. Lett. 69, 1426 (1996).

501. “Passivation of Dopants in InGaP using ECR Hydrogenation,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Mat. Sci. Eng. B 38, 263 (1996).

502. “Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures,” S.J. Pearton, S. Bendi, K.S. Jones, V. Krishnamoorthy, R.G. Wilson, F. Ren, R. Karlicek and R.A. Stall, Appl. Phys. Lett. 69, 1879 (1996).

503. “Er Doping of AlN During Growth by MOMBE,” J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hommerich, X. Wu, R.N. Schwartz, R.G. Wilson and J.M. Zavada, Appl. Phys. Lett. 69, 2083 (1996).

504. “Damage to Epitaxial GaN Layers by Ion Implantation,” H. Tan, J.S. Williams, F. Zou, D.J.H. Cockayne, S.J. Pearton and R.A. Stall, Appl. Phys. Lett. 69, 2364 (1996).

505. “Effect of Ar Addition in ECR Ch4/H2/Ar Plasma Etching of GaAs, InP and InGaP,” J.W. Lee, S.J. Pearton, C.R. Abernathy, W.S. Hobson and F. Ren, Solid State Electron. 39, 1095 (1996).

506. “Comparison of Dry Etching Techniques for InGaP, AlInP and AlGaP,” J. Hong, J.W. Lee, C. Santana, C.R. Abernathy, E.S. Lambers, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electron. 39, 1109 (1996).

507. “Cl2/Ar and CH4/H2/Ar Dry Etching of III-V Nitrides,” C.B. Vartuli, J.D. MacKenzie, J.W. Lee, C.R. Abernathy, S.J. Pearton and R.J. Shul, J. Appl. Phys. 80, 3705 (1996).

508. “High Density Etching of Group III Nitride Ternary Films,” R.J. Shul, A.J. Howard, S.J. Pearton, C.R. Abernathy and C.B. Vartuli, J. Electrochem. Soc. 143, 3285 (1996).

509. “Extremely High Etch Rate of In-based III-V Semiconductors in BCl3/N2 Based Plasma,” F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, S.J. Pearton, J.A. Caballero and M.W. Cole, J. Electrochem. Soc. 143, 3394 (1996).

510. “Wet Chemical Etching of AlN and InAlN in KOH Solutions,” C.B. Vartuli, S.J. Pearton, J.W. Lee, C.R. Abernathy, J.D. MacKenzie, J.C. Zolper, R.J. Shul and F. Ren, J. Electrochem. Soc. 143, 3681 (1996).

511. “Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys,” J. Hong, J.W. Lee, E.S. Lambers, C.R. Abernathy, S.J. Pearton, C. Constantine and W.S. Hobson, J. Electrochem. Soc. 143, 3656 (1996).

512. “Low Energy Electron-Enhanced Etching of GaN/Si in Hydrogen dc Plasma,” H.P. Gillis, D.A. Choutov, K.D. Martin, S.J. Pearton and C.R. Abernathy, J. Electrochem. Soc. 143, L251 (1996).

513. “Selective and Non-Selective Wet Chemical Etching of GaAsP,” J. Hong, S.J. Pearton, W.S. Hobson and H. Han, Solid State Electron. 39, 1675 (1996).

514. “High Ion Density Dry Etching of Compound Semiconductors,” S.J. Pearton, Mat. Sci. Eng. B40, 161 (1996).

515. “Thermal Stability of Hydrogen in LiAlO 2 and LiGaO2,” R.G. Wilson, B.L. H. Chai, S.J.

75

Pearton, C.R. Abernathy, F. Ren and J.M. Zavada, Appl. Phys. Lett. 69 3848 (1996). 516. “Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes,” J.W. Lee,

C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson, R.J. Shul, C. Constantine and C. Barratt, J. Electrochem. Soc. 144, 1417 (1997).

517. “ECR Plasma Etching of AlGaN in Cl2/Ar and BCl3/Ar Plasmas,” C.B. Vartuli, S.J. Pearton, J.W. Lee, A.Y. Polyakov, M. Shin, D.W. Greve, M. Skowronski and R.J. Shul, J. Electrochem. Soc. 144, 2146 (1997).

518. “Electrical and Structural Analysis of High Dose Si and Mg Implantation in GaN,” J.C. Zolper, M.H. Crawford, H. Tan, J. Williams, J. Zhen, D. Cockayne, S.J. Pearton and R.F. Karlicek, Appl. Phys. Lett. 70, 2729 (1997).

519. “Unintentional Hydrogenation of GaN and Related Alloys During Processing,” S.J. Pearton, C.R. Abernathy, C. Vartuli, J. Lee, J. MacKenzie, R.G. Wilson, R. Shul, F. Ren and J. Zavada, J. Vac. Sci. Technol. A 14, 831 (1996).

520. “Wet and Dry Etching of LiGaO2 and LiAlO 2,” J. Lee, S.J. Pearton, C.R. Abernathy, J. Zavada and B. Chai, J. Electrochem. Soc.143, L169 (1996).

521. “Thermal Stability of W, WSix and Ti/Al Ohmic Contacts to InGaN, InN and InAlN,” C. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R. Shul, J. Zolper, M. Lovejoy, A. Baca and M. Crawford, J. Vac. Sci. Technol. B 14, 3520 (1996).

522. “High Temperature Surface Degradation of III-V Nitrides,” C. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, E. Lambers and J. Zolper, J. Vac. Sci. Technol. B 14, 3523 (1996).

523. “Etching Processes for Fabrication of GaN/InGaN/AlN Microdisk Laser Structures,” J. Lee, C. Vartuli, C.R. Abernathy, j. MacKenzie, J.R. Mileham, S.J. Pearton, R. Shul, J. Zolper, M. Crawford, J. Zavada, R. Wilson and R. Schwartz, J. Vac. Sci. Technol. B 14, 3637 (1996).

524. “Plasma Etching of InGaP, AlInP and AlGaP in BCl3 Environment,” J. Hong, J. Lee, C. Santana, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Mat. Sci. Eng. B 41, 247 (1996).

525. “Reactive Ion Etching of III-V Nitrides,” S.J. Pearton, R. Shul, G. McLane and C. Constantine, Solid State Electron. 41, 159 (1997).

526. “Microdisk Laser Structures Formed in III-V nitride Epilayers,” J. Zavada, C.R. Abernathy, S.J. Pearton, J. MacKenzie, J. Mileham, R.G. Wilson, R. Schwartz, M.H. Crawford, R. Shul, S. Kilcoyne, D. Zhang and R.M. Kolbas, Solid State Electron. 41, 353 (1997).

527. “ECR Etching of III-V Nitrides in IBr/Ar Plasmas,” C. Vartuli, S.J. Pearton, J. Lee, J. MacKenzie, C.R. Abernathy and R. Shul, J. Vac. Sci. Technol. B 15, 98 (1997).

528. “Dry Etching of GaSb and InSb in CH4/H2/Ar,” J. Mileham, J. Lee, E. Lambers and S.J. Pearton, Semicond. Sci. Technol. 12, 338 (1997).

529. “Formation of Dry Etched Gratings in GaN and InGaN,” J.W. Lee, J. Hong, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren and D. Sirortino, J. Electron. Mater. 26, 290 (1997).

530. “Hydrogen Passivation in n- and p-type 6H-SiC,” F. Ren, S.J. Pearton, J.M. Crow and M. Bhaskaran, J. Electron. Mater. 26, 198 (1997).

531. “Plasma Etching of III-V Semiconductors in BCl3 Chemistries: Part I, GaAs and Related Compounds,” J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Plasma Chem. Plasma Proc. 17, 155 (1997).

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532. “Plasma Etching of III-V Semiconductors in BCl3 Chemistries: Part II, InP and Related Compounds,” J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Plasma Chem. Plasma Proc. 17, 169 (1997).

533. “Electrical and Optical Changes in AlGaAs and InGaP During Dielectric Etching in ECR SF6 Plasmas,” K. Lee, J. Lee, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, Solid State Electron. 41, 401 (1997).

534. “Conduction Mechanisms in W and SWix Ohmic Contacts to InGaN and InN,” C. Vartuli, S.J. Pearton, C.R. Abernathy, J. MacKenzie, M. Lovejoy, R. Shul, J. Zolper, A.G. Baca, M. Crawford, A. Jones and F. Ren, Solid State Electron. 41, 531 (1997).

535. “High Temperature Annealing of GaN, InN and AlN and Related Alloys,” J. Hong, J. Lee, C. Vartuli, J. MacKenzie, S. Donovan, C.R. Abernathy, R. Crockett, S.J. Pearton, J.C. Zolper and F. Ren, Solid State Electron. 41, 681 (1997).

536. “Hydrogen Incorporation and Its Temperature Stability in SiC Crystals,” J. Zavada, R. Wilson, F. Ren, S.J. Pearton and R.F. Davis, Solid State Electron. 41, 677 (1997).

537. “Ion Implantation of Si, Mg and C into AlGaN,” A. Polyakov, M. Shin, M. Skrowronski, R. Wilson, D. Grove and S.J. Pearton, Solid State Electron. 41, 703 (1997).

538. “InN-based Ohmic Contacts to InAlN,” S. Donovan, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, K. Jones and M. Cole, Appl. Phys. Lett. 70, 2592 (1997).

539. “Dry Etching of III-V Semiconductors in IBr/Ar ECR Plasmas,” J. Lee, J. Hong, E. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, J. Electron. Mater. 26, 429 (1997).

540. “Dry Etch Damage in ICP Exposed GaAs/AlGaAs HBTs,” F. Ren, J. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, C. Barratt and R.J. Shul, Appl. Phys. Lett. 70, 2410 (1997).

541. “Direct and Indirect Excitation of Er3+ Ions in ER:AlN,” X. Wu, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R. Schwartz, R.G. Wilson and J.M. Zavada, Appl. Phys. Lett. 70, 2126 (1997).

542. “Wet Chemical Etching Survey of III-Nitrides,” C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, F. Ren, J.C. Zolper and R.J. Shul, Solid State Electron. 41, 1447 (1997).

543. “Recessed Gate GaN FET,” F. Ren, J. Lothian, Y.K. Chen, R. Karlicek, L. Tran, M. Schurmann, R. Stall, J.W. Lee and S.J. Pearton, Solid State Electron. 41, 1819 (1997).

544. “Stability of H in ScMgAlO 4,” C. Brandle, F. Ren, R.G. Wilson, J.W. Lee, S.J. Pearton and J.M. Zavada, Solid State Electron. 41, 1943 (1997).

545. “Postgrowth RTA of GaN – Relationship Between Annealing Temperature, GaN Crystal Quality and Contact-GaN Interfacial Structures,” M.W. Cole, F. Ren and S.J. Pearton, Appl. Phys. Lett. 71, 3249 (1997).

546. “High Rate Dry Etching of NiFe and NiFeCo,” K.B. Jung, E.S. Lambers, J.R. Childress, S.J. Pearton, M. Jenson and A. Hurst, Appl. Phys. Lett. 71, 1255 (1997).

547. “ICP Etching of III-V Nitrides in CH4/H2/Ar and CH4/H2/N2 Chemistries,” C.B. Vartuli, S.J. Pearton, J.W. Lee, J.D. MacKenzie, C.R. Abernathy, R.J. Shul, C. Constantine and C. Barratt, J. Electrochem. Soc. 144, 2844 (1997).

548. “Dry Etch Damage in GaAs MESFETs Exposed to ICP and ECR Ar Plasmas,” F. Ren, J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, C. Barratt and R.J. Shul, J. Vac. Sci. Technol. B 15, 983 (1997).

77

549. “Characterization of Damage in ECR Plasma Etched Compound Semiconductors,” S.J. Pearton, Appl. Surf. Sci., 117/118, 597 (1997).

550. “Er-doping of III-Nitrides During Growth by MOMBE,” J.D. MacKenzie, C.R. Abernathy, J.M. Zavada, S.J. Pearton and U. Hommerich, J. Cryst. Growth 175/176, 84 (1997).

551. “ICP Ar Damage in AlGaAs,” J.W. Lee, D. Hays, C.R. Abernathy, S.J. Pearton, W.S. Hobson and C. Constantine, J. Electrochem. Soc. 144, L245 (1997).

552. “ICl Plasma Etching of III-V Semiconductors,” J.W. Lee, J. Hong, E.S. Lambers and S.J. Pearton, J. Vac. Sci. Technol. B 15, 652 (1997).

553. “Critical Issues of III-V Compound Semiconductor Processing,” S.J. Pearton, Mat. Sci. Eng. B 44, 1 (1997).

554. “Comparison of Ohmic Metallization Schemes for InGaAlN,” F. Ren, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, R.J. Shul, J.C. Zolper, M.L. Lovejoy, A.G. Baca, M.H. Crawford and K.A. Jones, J. Vac. Sci. Technol. A 15, 802 (1997).

555. “Dry Etching of InGaP in Magnetron-Enhanced BCl3 Plasmas,” G.F. McLane, M. Wood, D. Eckart, J.W. Lee, K.N. Lee, S.J. Pearton and C.R. Abernathy, J. Vac. Sci. Technol. A 15, 622 (1997).

556. “Comparison of Dry Etch Chemistries for SiC,” G. McDaniel, J.W. Lee, E.S. Lambers, S.J. Pearton, P.H. Holloway, F. Ren, J.M. Grow, M. Bhaskaran and R.G. Wilson, J. Vac. Sci. Technol. A 15, 885 (1997).

557. “Patterning of Cu, Co, Fe and Ag for Magnetic Nanostructures,” K.B. Jung, J.W. Lee, Y.D. Park, J.A. Caballero, J.R. Childress, S.J. Pearton and F. Ren, J. Vac. Sci. Technol. A 15, 1780 (1997).

558. “RTP of III-Nitrides,” J. Hong, J.W. Lee, C.B. Vartuli, C.R. Abernathy, J.D. MacKenzie, S.M. Donovan, S.J. Pearton and J.C. Zolper, J. Vac. Sci. Technol. A 15, 797 (1997).

559. “Damage Investigation in AlGaAs and InGaP Exposed to High Ion Density Ar and SF6 Plasmas,” J.W. Lee, K.N. Lee, R.R. Stradtmann, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, J. Vac. Sci. Technol. A 15, 890 (1997).

560. “Effects of H2 Plasma Exposure on GaAs/AlGaAs HBTs,” J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, R.H. Shul, C. Constantine and C. Barratt, Solid State Electron. 61, 829 (1997).

561. “A Survey of Ohmic Contacts to Compound Semiconductors,” A.G. Baca, J.C. Zolper, R.D. Briggs, F. Ren and S.J. Pearton, Thin Solid Films 308, 549 (1997).

562. “Alkali Impurities,” S.J. Pearton in Properties of Si, ed. R. Hull (INSPEC, IEE, London 1998).

563. “Comparison of ECR Plasma Chemistries for Etching of InGaP and AlGaP,” J. Hong, J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, W.S. Hobson and F. Ren, J. Electron. Mater. 26, 1303 (1997).

564. “Comparison of Dry Etching of III-V Semiconductors in ICl/Ar and IBr/Ar ECR Plasmas,” J.W. Lee, J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and F. Ren, J. Electron. Mater. 26, 1314 (1997).

565. “ECR Plasma Etching of Materials for Magneto-Resistive Random Access Memory Applications,” K.B. Jung, J.W. Lee, Y.D. Park, J.R. Childress, S.J. Pearton, M. Jenson and A.T. Hurst, Jr., J. Electron. Mater. 26, 1310 (1997).

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566. “Etching of Ga-Based III-V Semiconductors in Inductively Coupled Ar and CH4/H2-Based Plasma Chemistries,” J.W. Lee, C.R. Abernathy, S.J. Pearton, C. Constantine, R.J. Shul and W.S. Hobson, Plasma Sources Sci. Technol. 6, 499 (1997).

567. “PL Study of Er-Doped AlN,” X. Wu, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.G. Wilson R.N. Schwartz and J.M. Zavada, J. Lumin. 72-74, 284 (1997).

568. “Luminescence Enhancement in AlN(Er) by Hydrogenation,” S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, R.G. Wilson, R.N. Schwartz and J.M. Zavada, Appl. Phys. Lett. 71, 1807 (1997).

569. “Hydrogenation Effects During High Density Plasma Processing of GaAs MESFETs,” F. Ren, J.W. Lee, C.R. Abernathy, S.J. Pearton, R.J. Shul, C. Constantine and C. Barratt, Semicond. Sci. Technol. 12, 1154 (1997).

570. “Materials Characterization of WSi Contacts to n+GaN as a Function of RTA Temperatures,” M.W. Cole, F. Ren and S.J. Pearton, J. Electrochem. Soc. 144, L275 (1997).

571. “Comparison of GaN, InN and AlN Powders for Susceptor-Based Rapid Thermal Annealing of Group III-Nitride Materials,” J. Hong, J.W. Lee, J.D. MacKenzie, S.M. Donovan, C.R. Abernathy, S.J. Pearton and J.C. Zolper, Semicond. Sci. Technol. 12, 1310 (1997).

572. “Plasma Characteristics and the Growth of Group III-Nitrides by MOMBE,” J. MacKenzie, L. Abbaschian, C.R. Abernathy, S. Donovan, S.J. Pearton, P.C. Chow and J. Van Hove, J. Electron. Mater. 26, 1266 (1997).

573. “Effect of Ion Damage on the Electrical and Optical Behavior of p-Type GaAs and InGaP,” K.N. Lee, J.W. Lee, J. Hong, C.R. Abernathy, S.J. Pearton and W.S. Hobson, J. Electron. Mater. 26, 1279 (1997).

574. “Effect of Dry Etching on Surface Properties of III-Nitrides,” F. Ren, J.R. Lothian, S.J. Pearton, C.R. Abernathy, C.B. Vartuli, J.D. MacKenzie, R.G. Wilson and R.F. Karlicek, J. Electron. Mater. 26, 1287 (1997).

575. “The Role of Ion Characteristics in Determining the Structural and Electrical Quality in InN Grown by MOMBE,” S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, P.C. Chow and J. Van Hove, J. Electron. Mater. 26, 1292 (1997).

576. “New Plasma Chemistries for Etching GaN and InN : BI3 and BBr3,” H. Cho, J. Hong, T. Maeda, S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.J. Shul and J. Han, MRS Int. J. Nitride Semicond. Res. 3, 5 (1998).

577. “ICP Etching of III-V Semiconductors in Cl2-based Chemistries,” J.W. Lee, E.S. Lambers, C.R. Abernathy, S.J. Pearton, R.J. Shul, F. Ren, W.S. Hobson and C. Constantine, Mat. Sci. Semicond. Proc. 1, 1 (1998).

578. “ICP Etch Processes for NiMnSb,” J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. A 16 (1998).

579. “High Rate Etching of SiC and SiCN in NF3 Inductively Coupled Plasmas,” J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J.M. Grow, F. Ren and R.J. Shul, Solid State Electron. 42, (1998).

580. “Dry and Wet Etching of ScMgAlO 4,” C. Brandle, F. Ren, J.W. Lee and S.J. Pearton, Solid State Electron. 42, (1998).

581. “Effect of Atomic H on Er Luminescence from AlN,” S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, U. Hommerich, J.M. Zavada, R.G. Wilson and R.N. Schwartz, J. Vac. Sci. Technol. A 16, (1998).

79

582. “Development of ECR and ICP High Density Plasma Etching for Patterning of NiFe and NiFeCo,” K.B. Jung, E.S. Lambers, J.R. Childress, S.J. Pearton, M. Jenson and A. Hurst, Jr., J. Vac. Sci. Technol. A 16, (1998).

583. “Comparison of ICP Cl2 and CH4/H2 Etching of III-Nitrides,” H. Cho., C.B. Vartuli, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul and C. Constantine, J. Vac. Sci. Technol. A 16, (1998).

584. “ECR Plasma Etching of Oxides and Sr-S and ZnS Electroluminescent Materials for Flat Panel Displays,” J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson and S.J. Pearton, J. Vac. Sci. Technol. A 16, (1998).

585. “Low Bias Dry Etching of III-Nitrides in Cl2-based ICPs,” H. Cho, C.B. Vartuli, S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, R.J. Shul and C. Constantine, J. Electron. Mater. 27, 170 (1998).

586. “Improved Sidewall Morphology on Dry-Etched SiO 2 Masked GaN Sidewalls,” F. Ren, S.J. Pearton, R.J. Shul and J. Han, J. Electron. Mater. 27, 175 (1998).

587. “Comparison of Dry Etch Damage in GaAs/AlGaAs HBTs Exposed to ECR and ICP Ar Plasmas,” J.W. Lee, C.R. Abernathy, S.J. Pearton, F. Ren, C. Constantine, C. Barratt and R.J. Shul, Solid State Electron. 42, (1998).

588. “Effect of High Density H2 Plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs,” J.W. Lee, F. Ren, S.J. Pearton, R.J. Shul, R. Kopf, J.M. Kuo, D. Johnson and C. Constantine, Solid State Electron. 42, (1998).

589. “ICP Etching of InGaP, AlInP and AlGaP in Cl2 and BCl3 Chemistries,” J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, R.J. Shul and W.S. Hobson, J. Electron. Mater. 27, (1998).

590. “Dry and Wet Etch Processes for NiMnSb Heusler Alloy Thin Films,” J. Hong, J.A. Caballero, W. Geerts, J.R. Childress and S.J. Pearton, J. Electrochem. Soc. 144, 3602 (1997).

591. “Precipitation, Segregation and IR Absorption of I in Si,” S.J. Pearton, in Properties of Si, ed. R. Hull (INSPEC, IEE, London 1998).

592. “Segregation Coefficient, Solubility and IR Absorption of C in Si,” S.J. Pearton, in Properties of Si, ed. R. Hull (INSPEC, IEE, London 1998).

593. “Selective ICP Etching of Group III-Nitrides in Cl2 and BCl3-based Plasmas,” R.J. Shul, C.G. Willison, M. Bridges, J. Han, J.W. Lee, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, S.M. Donovan, L. Zhang and L.F. Lester, J. Vac. Sci. Technol. A 16, (1998).

594. “Hydrogen-Decorated Lattice Defects in Proton-Implanted GaN,” M.G. Weinstein, C. Song, M. Stavola, S.J. Pearton, R.G. Wilson, R.J. Shul, K.P. Killeen and M.J. Ludowise, Appl. Phys. Lett. 72, (1998).

595. “Passivation,” S.J. Pearton, in Encyclopedia of Electronics and Electrical Engineering, ed. J.G. Webster (Wiley and Sons, NY 1999), Vol. 15.

596. “Plasma Chemistry,” S.J. Pearton, in Encyclopedia of Electronics and Electrical Engineering, ed. J.G. Webster (Wiley and Sons, NY 1999), Vol. 16.

597. “Galvanometry,” in Methods of Materials Processing, ed. E. Kaufmann (Wiley and Sons, NY 1998).

598. “Diffusion of Dopants and Impurities in GaN and Related Materials,” S.J. Pearton, R.G. Wilson, J.C. Zolper and J.M. Zavada, Diffusion and Defect Forum 120/121, 406 (1998).

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599. “High Density Plasma Etching of Compound Semiconductors,” R.J. Shul, G.B. McClellan, R.D. Briggs, D.J. Rieger, S.J. Pearton, C.R.. Abernathy, J.W. Lee, C. Constantine and C. Barratt, J. Vac. Sci. Technol. A 15, 633 (1998).

600. “Si Implantation Activation Annealing of GaN up to 1400oC,” J.C. Zolper, J. Han, R. Biefeld, W. Wampler, D. Rieger, S.J. Pearton, J.S. Williams, H. Tan and R. Stall, J. Electron. Mater. 27, 179 (1998).

601. “Dry Etch Patterning of LaCaMnO3 and SmCo Thin Films,” J.J. Wang, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen, E.S. Gillman, F.J. Cadieu, R. Rani, X.R. Qian and L. Chen, J. Electrochem. Soc. 145, 2512 (1998).

602. “Annealing of Ion-Implanted GaN,” H.H. Tan, J.S. Williams, J. Zou, D.J. Cockayne, S.J. Pearton, J.C. Zolper and R.A. Stall, Appl. Phys. Lett. 72,1190 (1998).

603. “Copper Dry Etching with Cl2/Ar Plasma Chemistry,” J.W. Lee, Y.D. Park, J.R. Childress, S.J. Pearton, F. Sharifi and F. Ren, J. Electrochem. Soc. 145, 2585 (1998).

604. “Dry Etching of SrS Thin Films,” J.W. Lee, M.R. Davidson, B. Pathangey, P.H. Holloway and S.J. Pearton, J. Electrochem. Soc. 145, 2461 (1998).

605. “Er Doping of GaN During Growth by MOMBE,” J. MacKenzie, C.R. Abernathy, S.J. Pearton, U. Hommerich, J.T. Seo, R.G. Wilson and J.M. Zavada, Appl. Phys. Lett. 72, 2710 (1998).

606. “Ultra High Si+ Implant Activation Efficiency in GaN Using a High Temperature RTP System,” X.A. Cao, C.R. Abernathy, R.K. Singh, S.J. Pearton, M. Fu, V. Sarvepalli, J.A. Sekhar, J.C. Zolper, D.J. Rieger, J. Han, T.J. Drummond, R.J. Shul and R.G. Wilson, Appl. Phys. Lett. 73, 206 (1998).

607. “High Selectivity Dry Etching of InGaP over AlInP in BI3 and BBr3 Plasma Chemistries,” J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul and W.S. Hobson, Electrochemical and Solid-State Letters 1, 56 (1998).

608. “Comparison of Plasma Chemistries for ICP Etching of InGaAlP Alloys,” J. Hong, J. Lee, C.R. Abernathy, E.S. Lambers, S.J. Pearton, R.J. Shul and W.S. Hobson, J. Vac. Sci. Technol. A 16, 1497 (1998).

609. “High Selectivity Plasma Etching of InN Over GaN,” H. Cho, J. Hong, T. Maeda, S.M. Donovan, C.R. Abernathy, S.J. Pearton, R.J. Shul and J. Han, J. Electronic Mater. 27, 915 (1998).

610. “Thermal Stability of W and WSix Contacts on p-GaN,” X.A. Cao, S.J. Pearton, F. Ren and J.R. Lothian, Appl. Phys. Lett. 73, 942 (1998).

611. “Growth of III-Nitrides on ZnO, LiGaO2 and LiAlO 2 Substrates,” J.D. MacKenzie, S.M. Donovan, C.R. Abernathy, S.J. Pearton, P.H. Holloway, R. Linares, J.M. Zavada and B. Chai, J. Electrochem. Soc. 145, 2581 (1998).

612. “Device Degradation During Low Temperature ECR-CVD, Part I: GaAs MESFETs,” J.W. Lee, K.D. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy and F. Ren, Solid-State Electron. 42, 1015 (1998).

613. “Device Degradation During Low Temperature ECR-CVD, Part II: GaAs/AlGaAs HBTs,” J.W. Lee, K.D. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy and F. Ren, Solid-State Electron. 42, 1021 (1998).

614. “Device Degradation During Low Temperature ECR-CVD, Part III: GaAs/InGaP HEMTs,” J.W. Lee, K.D. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy and F. Ren, Solid-State Electron. 42, 1027 (1998).

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615. “Low Temperature ECR-CVD of SiNx for III-V Device Passivation,” J.W. Lee, K. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton and F. Ren, Solid-State Electron. U, 1031 (1998).

616. “Plasma Chemistries for Dry Etching of NiFe and NiFeCo,” K.B. Jung, J. Hong, H. Cho, J.R. Childress, S.J. Pearton, M. Jenson and A.T. Hurst, J. Electron. Mater. 27, 972 (1998).

617. “ICP Etch Processes for NiMnSb,” J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. A 16, 2153 (1998).

618. “Comparison of Plasma Chemistries for Dry Etching Thin Film Electroluminescent Display Materials,” J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, B. Davydov, T.J. Anderson and S.J. Pearton, J. Vac. Sci. Technol. A 16, 2177 (1998).

619. “ICP Etching of Bulk 6H-SiC and Thin Film SiCN in NF3 Chemistries,” J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.-M. Zetterling, J.M. Crow, F. Ren and R.J. Shul, J. Vac. Sci. Technol. A 16, 2204 (1998).

620. “Dry Etching of GaN and Related Materials – Comparison of Techniques,” J. lee, H. Cho, D.C. Hays, C.R. Abernathy, S.J. Pearton, R.J. Shul, G.A. Vawter and J. Han, IEEE J. Select. Topics in Quantum Electron. 4, 557 (1998).

621. “Cl2-Based ICP Etching of NiFe and Related Materials,” K.B. Jung, E.S. Lambers, J.R. Childress, S.J. Pearton, M. Jenson and A.T. Hurst, J. Electrochem. Soc. 145, 4025 (1998).

622. “High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors,” J.W. Lee, S.J. Pearton, F. Ren, R.F. Kopf, J.M. Kuo, R.J. Shul, C. Constantine and D. Johnson, J. Electrochem. Soc. 145, 4036 (1998).

623. “Thermal Stability of 2H Implanted n- and p-type GaN,” S.J. Pearton, R.J. Wilson, J.M. Zavada, J. Han and R.J. Shul, Appl. Phys. Lett. 73, 1877 (1998).

624. “Electrical Effects in GaAs and AlGaAs During ICP-CVD of SiN x Films,” Y.B. Hahn, J.W. Lee, K. MacKenzie, D. Johnson, D. Hays, C.R. Abernathy and S.J. Pearton, Electrochem. Solid-State Lett. 1(5) 230 (1998).

625. “High Resolution Pattern Transfer in III-Nitrides Using BC13/Ar Inductively Coupled Plasmas,” H. Cho, S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, J. Han, R.J. Shul and J.W. Lee, Solid-State Electron. 42, 1719 (1998).

626. “Wet Chemical Etching of NiFe, NiFeCo and NiMnSb for Magnetic Device Fabrication,” X.A. Cao, J.A. Caballero, K.B. Jung, J.W. lee, S. Onishi, J.R. Childress and S.J. Pearton, Solid-State Electron. 42, 1705 (1998).

627. “300oC GaN/AlGaN Heterojunction Bipolar Transistor,” F. Ren, C.R. Abernathy, J.M. Van Hove, P.P. Chow, R. Hickman, J.J. Klaassen, R.F. Kopf, H. Cho, K.B. Jung, J.R. LaRoche, R.G. Wilson, J. Han, R.J. Shul, A.G. Baca and S.J. Pearton, MRS Internet J. Nitride Semicond. Res. 3, 41 (1998).

628. “New Plasma Chemistries for Dry Etching of InGaAlP Alloys: BI3 and BBr3,” J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul and W.S. Hobson, J. Vac. Sci. Technol. B 16, 2690 (1998).

629. “Activation Annealing of Si-Implanted GaN up to 1500oC using a Novel RTP Technique,” M. Fu, V. Sarvepalli, R.K. Singh, C.R. Abernathy, X. Cao, S.J. Pearton and J.A. Sekhar, J. Electron. Mater. 27, 1329 (1998).

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630. “Thermal Stability of Ohmic Contacts to InN,” S.M. Donovan, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren, K. Jones and M. Cole, Solid State Electron. 42 1831 (1998).

631. “ICP and ECR Plasma Etching of InGaAlP Compound Semiconductor System,” J. Hong, E.S. Lambers, C.R. Abernathy, S.J. Pearton, R.J. Shul and W.S. Hobson, Critical Rev. in Solid State and Materials Sciences 23, 1 (1998)

632. “ECR-CVD SiN x for T-gate Passivation,” F. Ren, J. LaRoche, R. Anderson, S1.J.Pearton, J.W. Lee, D. Johnson, J.R. Lothian, J. Lin, J.S. Weiner, R.J. Shul and C.S. Wu, Electrochem. Solid-State Lett. 1, 279 (1998).

633. “ICP Etching of In-based Compound Semiconductors in CH4/H2/Ar,” J.A. Diniz, J.W. Swart, K.B. Jung, J. Hong and S.J. Pearton, Solid State Electron. 42, 1947 (1998).

634. “Effect of Deposition Condition on Wet and Dry Etch Rates of Device Quality ICP-CVD SiNx,” Y.B. Hahn, J.W. Lee, K.D. MacKenzie, D. Johnson, S.J. Pearton and F. Ren, Solid State Electron 42, 2017 (1998).

635. “Iodine and Bromine-based Dry Etching of LaCaMnO3,” J.J. Wang, H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen and E.S. Gillman, Plasma Chem. Plasma Process. 19, 229 (1999).

636. “Interhalogen Plasma Chemistries for the Etching of NiMnSb,” H. Cho, K.B. Jung, D.C. Hays, H.A. Caballero, J.R. Childress and S.J. Pearton, Electrochem. Solid-State Lett. 2, 70 (1999).

637. “Patterning of Thin Film NiMnSb using ICP Etching,” J. Hong, H.A. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. B 16, 3349 (1998).

638. “Demonstration of GaN MIS Diodes by using AlN and Ga2O3(Gd2O3) as Dielectrics,” F. Ren, C.R. Abernathy, J.D. MacKenzie, B.P. Gila, S.J. Pearton, M. Hong, M.A. Marcus, M.J. Schurmann, A.G. Baca and R.J. Shul, Solid State Electron. 42, 2177 (1998).

639. “Comparison of Plasma Etch Techniques for III-V Nitrides,” R.J. Shul, G.A. Vawter, C.G. Willison, M.M. Bridges, J.W. Lee, S.J. Pearton and C.R. Abernathy, Solid State Electron. 42, 2259 (1998).

640. “High Density Plasma Etch Selectivity for the III-V Nitrides,” R.J. Shul, C.G. Willison, M. Bridges, J. Han, J.W. Lee, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie and S.M. Donovan, Solid State Electron. 42, 2269 (1998).

641. “Cl2-based Dry Etching of the AlGaInN System in Inductively Coupled Plasmas,” H. Cho, C.B. Vartuli, C.R. Abernathy, S.M. Donovan, S.J. Pearton, R.J. Shul and J. Han, Solid State Electron. 42, 2277 (1998).

642. “ICP Etching of SiC,” J.J. Wang, E.S. Lambers, S.J. Pearton, M. Ostling, C.M. Zetterling, J.M. Crow, F. Ren and R.J. Shul, Solid State Electron. 42, 2283 (1998).

643. “A Novel Technique for RTP Annealing of Compound Semiconductors,” M. Fu, V. Sarvepalli, R.K. Singh, C.R. Abernathy, X. Cao, S.J. Pearton and J.A. Sekhar, Solid State Electron. 42, 2335 (1998).

644. “Effect of Temperature on Ga2O3(Gd2O3)/GaN Metal-Oxide-Semiconductor Field-Effect Transistors,” F. Ren, M. Hong, S.N.G. Chu, M.A. Marcus, M.J. Schurmann, A. Baca, S.J. Pearton and C.R. Abernathy, Appl. Phys. Lett. 73, 3893 (1998).

645. “New Plasma Chemistries for Etching III-V Compound Semiconductors: BI3 and BBr3,” T. Maeda, H. Cho, J. Hong and S.J. Pearton, J. Electron. Mater. 28, 118 (1999).

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646. “Plasma Chemistries for High Density Plasma Etching of SiC,” J. Hong, R.J. Shul, L. Zhang, L.F. Lester, H. Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.J. Pearton, C.-M. Zetterling and M. Ostling, J. Electron. Mater. 28, 194 (1999).

647. “Effects of Hydrogen Implantation into GaN,” S.J. Pearton, C.R. Abernathy, R.G. Wilson, J.M. Zavada, C.Y. Song, M.G. Weinstein, M. Stavola, H. Han and R.J. Shul, Nucl. Inst. Meth. In Physics Res. B147, 171 (1999).

648. “Continuous Room Temperature Operation of Optically Pumped InGaAs/InGaAsP Microdisk Lasers,” S.M.K. Thiyagarajan, A.F.T. Levi, C.K. Kim, I. Kim, P.D. Dapkus and S.J. Pearton, Electron. Lett. 34, 2333 (1998).

649. “Redistribution of Implanted Dopants in GaN,” X.A. Cao, R.G. Wilson, J.C. Zolper, S.J. Pearton, J. Han, R.J. Shul, D.J. Rieger, R.K. Singh, M. Fu, V. Sarvepalli, J.A. Sekhar and J.M. Zavada, J. Electron. Mater. 28, 259 (1999).

650. “UV Photoassisted Etching of GaN in KOH,” H. Cho, K.H. Auh, J. Han, S.M. Donovan, C.R. Abernathy, E.S. Lambers, F. Ren and S.J. Pearton, J. Electron. Mater. 28, 288 (1999).

651. Spectroscopy of Proton Implanted GaN,” M.G. Weinstein, M. Stavola, C.Y. Song, C. Bozdog, H. Przbylinska, G.D. Watkins, S.J. Pearton and R.G. Wilson, MRS Internet J. Nitride Semicond. Res. 451, G5-9 (1999).

652. “Rapid Thermal Processing of Implanted GaN up to 1500oC,” X. Cao, S.J. Pearton, R.K. Singh, C.R. Abernathy, J. Han, R.J. Shul, D.J. Rieger, J.C. Zolper, R.G. Wilson, M. Fu and J.A. Sekhar, MRS Internet J. Nitride Semicond. Res. 451, G6-33 (1999).

653. “Behavior of W and WSix Contact Metallization on n- and p-type GaN,” X.A. Cao, F. Ren, J. Lothian, S.J. Pearton, C.R. Abernathy, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg and R.J. Shul, MRS Internet J. Nitride Semicond. Res. 451, G6-39 (1999).

654. “Photoelectrochemical Etching of InGaN,” H. Cho, S.M. Donovan, C.R. Abernathy, S.J. Pearton, J. Han and R.J. Shul, MRS Internet J. Nitride Semicond. Res. 451, G6-40 (1999).

655. “ICP Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He,” H. Cho, Y.B. Hahn, D.C. Hays, K.B. Jung, S.M. Donovan, C.R. Abernathy, S.J. Pearton, J. Han and R.J. Shul, MRS Internet J. Nitride Semicond. Res. 451, G6-56 (1999).

656. “Group III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas,” R.J. Shul, L. Zhang, C.G. Willison, J. Han, J. Hong, S.J. Pearton and L.F. Lester, MRS Internet J. Nitride Semicond. Res. 451, G8-1 (1999).

657. “RBS Lattice Site Location and Damage Recovery Studies on Er-implanted GaN,” E. Alves, M.F. da Silva, J.C. Soares, J. Bartels, R. Vianden, C.R. Abernathy and S.J. Pearton, MRS Internet J. Nitride Semicond. Res. 451, G11-2 (1999).

658. “Optical Characterization of Er-doped III-Nitrides Prepared by MOMBE,” U. Hommerich, M. Thaik, G. Bondu, J. Prejean, J. Seo, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada and O. Ambacher, MRS Internet J. Nitride Semicond. Res. 451, G11-6 (1999).

659. “High Density Plasma Etching of NiFe, NiFeCo and NiMnSb-based Multilayers for Magnetic Storage Elements,” K.B. Jung, J. Hong, H. Cho, J.A. Caballero, J.R. Childress, S.J. Pearton, A.J. Hurst and M. Jenson, Appl. Surf. Sci. 138/139, 111 (1999).

660. “Ultra High Temperature Rapid Thermal Annealing of GaN,” X.A. Cao, R.K. Singh, S.J. Pearton, M. Fu, J.A. Sekhar, R.G. Wilson, J.C. Zolper, J. Han, D.R. Rieger and R.J. Shul, Mat. Sci. Semicond. Proc. 1, 267 (1999).

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661. “Patterning of NiFe and NiFeCo in CO/NH3 High Density Plasmas,” K.B. Jung, J. Hong, H. Cho, S. Onishi, D. Johnson, Y.D. Park, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. A 17, 535 (1999).

662. “Non-alloyed High Temperature Ohmic Contacts on Te-doped InP,” F. Ren, M.J. Antonell, C.R. Abernathy, S.J. Pearton, J.R. LaRoche, M.W. Cole, J.R. Lothian and A.G. Gedridge, Appl. Phys. Lett. 74, 1845 (1999).

663. “Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl2-Ar Mixture,” Y.B. Hahn, J.W. Lee, G.A. Vawter, R.J. Shul, C.R. Abernathy, D.C. Hays, E.S. Lambers and S.J. Pearton, J. Vac. Sci. Technol. B 17, 366 (1999).

664. “Comparison of Cl2/He, Cl2/Ar and Cl2/Xe Plasma Chemistries for Dry Etching of NiFe and NiFeCo,” K.B. Jung, H. Cho, Y.B. Hahn, D.C. Hays, E.S. Lambers, Y.D. Park, T. Feng, J.R. Childress and S.J. Pearton, J. Electrochem. Soc. 146, 1465 (1999).

665. “Relative Merits of Cl2 and CO/NH3 Plasma Chemistries for Dry Etching of MRAM Device Elements,” K.B. Jung, H. Cho, Y.B. Hahn, E.S. Lambers, S. Onishi, D. Johnson, A.T. Hurst, J.R. Childress, Y.D. Park and S.J. Pearton, J. Appl. Phys. 85, 4788 (1999).

666. “Interhalogen Plasma Chemistries for Dry Etching Patterning of Ni, Fe, NiFe and NiFeCo Thin Films,” H. Cho, K.B. Jung, D.C. Hays, Y.B. Hahn, E.S. Lambers, T. Feng, Y.D. Park, J.R. Childress and S.J. Pearton, Appl. Surf. Sci. 140, 215 (1999).

667. “Growth and Fabrication of GaN/AlGaN HBT,” J. Han, A.G. Baca, R.J. Shul, C.G. Willison, L. Zhang, F. Ren, A.P. Zhang, G.T. Dang, S.M. Donovan, X.A. Cao, H. Cho, K.B. Jung, C.R. Abernathy, S.J. Pearton and R.G. Wilson, Appl. Phys. Lett. 74, 27023 (1999).

668. “Plasma Etching of NiFe/Cu and NiMnSb/Al2O3 Multilayers for Sub-micron Pattern Definition,” K.B. Jung, J. Hong, J.R. Childress, S.J. Pearton, F. Sharifi, M. Jenson and A.T. Hurst, J. Mag. Mat. 198/199, 204 (1999).

669. “Thermal Stability of WSix and W Ohmic Contacts on GaN,” X.A. Cao, S.J. Pearton, S.M. Donovan, C.R. Abernathy, F. Ren, J.C. Zolper, M.W. Cole, A. Zeitouny, M. Eizenberg, R.J. Shul and A.G. Baca, Mat. Sci. Eng. B 59, 362 (1999).

670. “ICP Etching of III-V Semiconductors in BCl3-based Chemistries: I. GaAs, GaN, GaP, GaSb and AlGaAs,” T. Maeda, J.W. Lee, R.J. Shul, J. Han, J. Hong, E.S. Lambers, S.J. Pearton, C.R. Abernathy and W.S. Hobson, Appl. Surf. Sci. 143, 174 (1999).

671. “ICP Etching of III-V Semiconductors in BCl3-based Chemistries: II. InP, InGaAs, InGaAsP, InAs and AlInAs,” T. Maeda, J.W. Lee, R.J. Shul, J. Han, J. Hong, E.S. Lambers, S.J. Pearton, C.R. Abernathy and W.S. Hobson, Appl. Surf. Sci. 143, 183 (1999).

672. “Effect of Additive Noble Gases in Cl2-based ICP Etching of GaN, InN and AlN,” Y.B. Hahn, D.C. Hays, S.M. Donovan, C.R. Abernathy, J. Han, R.J. Shul, H. Cho, K.B. Jung and S.J. Pearton, J. Vac. Sci. Technol. A 17, 768 (1999).

673. “Novel Plasma Chemistries for Highly Selective Dry Etching of InxGa1-xN, BI3 and BBr3,” H. Cho, J. Jong, T. Maeda, S.M. Donovan, C.R. Abernathy, S.J. Pearton and R.J. Shul, Mat. Sci. Eng. B 59, 340 (199).

674. “Parametric Study of NiFe and NiFeCo High Density Plasma Etching Using CO/NH3,” K.B. Jung, H. Hong, H. Cho, S. Onishi, D. Johnson, Y.D. J.R. Childress and S.J. Pearton, J. Electrochem. Soc. 146, 2163 (1999).

85

675. “W and W/WSi/InxAl1-xN Ohmic Contacts to n-type GaN,” A. Zeitouny, M. Eizenberg, S.J. Pearton and F. Ren, Mat. Sci. Eng. B 59, 358 (1999).

676. “ICP Etching of CoFeB, CoZr, CoSm and FeMn Thin Films in Interhalogen Mixtures,” H. Cho, K.B. Jung, D.C. Hays, Y.B. Hahn, T. Feng, Y.D. Park, J.R. Childress, F.J. Cadieu, R. Rami, X.R. Qian, L. Chen and S.J. Pearton, Mat. Sci. Eng. B 60, 107 (1999).

677. Cl2-based ICP Etching of CoFeB, CoSm, CoZr and FeMn,” K.B. Jung, H. Cho, Y.B. Hahn, D.C. Hays, T. Feng, Y.D. Park, J.R. Childress and S.J. Pearton, Mat. Sci. Eng. B 60, 101 (1999).

678. “GaN: Processing, Defects and Devices,” S.J. Pearton, J.C. Zolper, R.J. Shul and F. Ren, J. Appl. Phys., Applied Physics Reviews 86, 1 (1999).

679. “Comparison of ICl- and IBr-based Plasma Chemistries for ICP Etching of GaN, InN and AlN,” Y.B. Hahn, D.C. Hays, H. Cho, K.B. Jung, C.R. Abernathy, S.M. Donovan, S.J. Pearton, J. Han and R.J. Shul, Mat. Sci. Eng. B 60, 95 (1999).

680. “Selective Dry Etching using ICP, Part I: GaAs/AlGaAs and GaAs/InGaP,” D.C. Hays, H. Cho, K.B. Jung, Y.B. Hahn, C.R. Abernathy, S.J. Pearton, F. Ren and W.S. Hobson, Appl. Surf. Sci. 147, 125 (1999).

681. “Selective Dry Etching using ICP, Part II: InN/GaN and InN/AlN,” D.C. Hays, H. Cho, K.B. Jung, Y.B. Hahn, C.R. Abernathy, S.J. Pearton, F. Ren, J. Han and R.J. Shul, Appl. Surf. Sci. 147, 134 (1999).

682. “Effect of Inert Gas Additive Species on Cl2 High Density Plasma Etching of Compound Semiconductors Part I: GaAs and GaSb,” Y.B. Hahn, D.C. Hays, H. Cho, K.B. Jung, C.R. Abernathy, S.J. Pearton and R.J. Shul, Appl. Surf. Sci. 147, 207 (1999).

683. “Effect of Inert Gas Additive Species on Cl2 High Density Plasma Etching of Compound Semiconductors Part II: InP, InSb, InGaP and InGaAs,” Y.B. Hahn, D.C. Hays, H. Cho, K.B. Jung, C.R. Abernathy, S.J. Pearton and R.J. Shul, Appl. Surf. Sci. 147, 215 (1999).

684. “W and WSix Ohmic Contacts on p- and n-type GaN,” X.A. Cao, F. Ren, S.J. Pearton, A. Zeitouny, M. Eizenberg, J.C. Zolper, C.R. Abernathy, J. Han, R.J. Shul and J.R. Lothian, J. Vac. Sci. Technol. A 17, 1221 (1999).

685. “Redistribution and Activation of Implanted, S, Se, Te, Be, Mg and C in GaN,” R.G. Wilson, J.M. Zavada, X.A. Cao, R.K. Singh, S.J. Pearton, H.J. Guo, S.J. Pennycook, M. Fu, J.A. Sekhar, V. Sarvepalli, R.J. Shul, J. Han, D.J. Rieger, J.C. Zolper and C.R. Abernathy, J. Vac. Sci. Technol. A 17, 1226 (1999).

686. “Comparison of Cl2 and F2 based Chemistries for the ICP Etching of NiMnSb Thin Films,” J. Hong, J. Caballero, E.S. Lambers, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. A 17, 1326 (1999).

687. “Damage to III-V Devices During ECR-CVD,” J.W. Lee, K. MacKenzie, D. Johnson, R.J. Shul, Y. Hahn, D.C. Hays, C.R. Abernathy, F. Ren and S.J. Pearton, J. Vac. Sci. Technol. A 17, 2183 (1999).

688. “III-Nitride Dry Etching - Comparison of ICP Chemistries,” H. Cho, Y.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, J. Han and R.J. Shul, J. Vac. Sci. Technol. A 17, 2202 (1999).

689. “Effect of Inert Gas Additive on Cl2-based ICP Etching of NiFe and NiFeCo,” K.B. Jung, H. Cho, Y.B. Hahn, D.C. hays, E.S. Lambers, Y.D. Park, T. Feng, J.R. Childress and S.J. Pearton, J. Vac. Sci. Technol. A 17, 2223 (1999).

86

690. “Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes,” X.A. Cao, H. Cho, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, Appl. Phys. Lett. 75, 232 (1999).

691. “The Use of Amorphous SiO and SiO 2 to Passivate Au-Ge Based Contact for GaAs Integrated Circuits,” J. LaRoche, F. Ren, J.R. Lothian, H. Hong, S.J. Pearton and E.S. Lambers, Electrochem. Solid-State Lett. 2, 395 (1999).

692. “Study of ICP NH3 Plasma Damage on GaAs Schottky Diodes,” L.C. Meyer, J.W. Lee, D. Johnson, M. Huang, F. Ren, T.J. Anderson, J.R. LaRoche, J.R. Lothian, C.R. Abernathy and S.J. Pearton, J. Electrochem. Soc. 146, 2717 (1999).

693. Cl2-based Dry Etching of Doped Manganate Perovskites: PrBaCaMnO3 and LaSrMnO3,” K.P. Lee, K.B. Jung, H. Cho, D. Kumar, S.V. Pietambaram, R.K. Singh, P.H. Hogan, K.H. Dahmen, J.B. Hahn and S.J. Pearton, J. Electrochem. Soc. 146, 2748 (1999).

694. “1.55µm Er-doped GaN LED,” H. Shen, J. Pamulpati, M. Taysing, M.C. Wood, R.T. Lareau, M.H. Ervin, J. MacKenzie, C.R. Abernathy, S.J. Pearton, F. Ren and J.M. Zavada, Solid-State Electron. 43, 1231 (1999).

695. “Implanted p-n Junctions in GaN,” X.A. Cao, J. LaRoche, F. Ren, S.J. Pearton, J.R. Lothian, R.K. Singh, R.G. Wilson, H.J. Guo and S.J. Pennycook, Solid-State Electron. 43, 1235 (1999).

696. “Electrical Effects of Ar Plasma Damage on GaN Diode Rectifiers,” G. Dang, A.P. Zhang, X.A. Cao, F. Ren, H. Cho, S.J. Pearton, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, Electrochem. Solid-State Lett. 2, 464 (1999).

697. “Growth and Device Performance of GaN Schottky Rectifiers,” J.I. Chyi, C.M. Lee, C.C. Chuo, G.C. Chi, G.T. Dang, A.P. Zhang, F. Ren, X.A. Cao, S.J. Pearton, S.N. G. Chu and R.G. Wilson, MRS Internet J. Nitride Semicond. Res. 4, 8 (1999).

698. “ICP Damage in GaN Schottky Diodes,” X.A. Cao, A.P. Zhang, G.T. Dang, H. Cho, F. Ren, S.J. Pearton, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, J. Vac. Sci. Technol. B 17, 1540 (1999).

699. “Novel In-Situ Ion Bombardment Process for a Thermally Stable (7800oC) Plasma Deposited Dielectric,” Electrochemical and Solid-State Letters 2, 537, (1999).

700. “GaAs/InGaP Selective Etching in BCl3/SF6 High Density Plasmas,” D.C. Hays, H. Cho, J.W. Lee, M.W. Devre, B. Reelfs, D. Johnson, J.N. Sasserath, L.C. Meyer, E. Touissaint, F. Ren and S.J. Pearton, Electrochemical and Solid-State Letters 2, 587 (1999).

701. “Oxygen Implant Isolation of n-GaN FET Structures,” G. Dang, X.A. Cao, F. Ren, S.J. Pearton, J. Han, A.G. Baca and R.J. Shul, J. Vac. Sci. Technol. B 17, 2015 (1999).

702. “Via-hole Etching for SiC,” P. Leerungnawarat, D.C. Hays, H. Cho, S.J. Pearton, R.M. Strong, C.-M. Zetterling and M. Ostling, J. Vac. Sci. Technol. B 17, 2050 (1999).

703. “Dry Etching of BaSrTiO 3 and LaNiO 3 Thin Films in Inductively Coupled Plasmas,” K.P. Lee, K.B. Jung, A. Srivistava, D. Kumar, R.K. Singh and S.J. Pearton, J. Electrochem. Soc. 146, 3778 (1999).

704. “Inductively Coupled Plasma Etching of Ta 2O5,” K.P. Lee, K.B. Jung, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, J. Electrochem. Soc. 146, 3794 (1999).

705. “Comparison of F2-based Gases for High Rate Dry Etching of Si,” D.C. Hays, K.B. Jung, Y.B. Hahn, E.S. Lambers, S.J. Pearton, J. Donahue, D. Johnson and R.J. Shul, J. Electrochem. Soc. 146, 3812 (1999).

87

706. “Electrical Effects of Plasma Damage in p-GaN,” X. Cao, S.J. Pearton, A. Zhang, G. Dang, F. Ren, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, Appl. Phys. Lett. 75, 2569 (1999).

707. “Mechanism of High Density Plasma Etch Processes for Ion-driven Etching of Materials,” J.W. Lee, J.F. Donahue, K.D. MacKenzie, R. Westerman, D. Johnson and S.J. Pearton, Solid-State Electron. 43, 1769 (1999).

708. “GaN MOSFETs,” F. Ren, S.J. Pearton, C.R. Abernathy, A. Baca, P. Cheng, R.J. Shul, S.N.G. Chu, M. Hong, M. Schurmann and J. R. Lothian, Solid-State Electron. 43, 1817 (1999).

709. “Oxygen Diffusion into SiO 2-capped GaN During Annealing,” S.J. Pearton, H. Cho, J.R. LaRoche, F. Ren, R.G. Wilson and J.W. Lee, Appl. Phys. Lett. 75, 2939 (1999).

710. “905 nm Wavelength Laser as a Means for In-Situ Endpoint Detection of Dry Etching of AlxGa1-xAs on GaAs,” J.W. Lee, R. Westerman, K.D. MacKenzie, J.F. Donahue, D. Johnson, J.N. Sasserath, K. Liddane and S.J. Pearton, Electrochem. Solid-State Lett. 2, 640 (1999).

711. “Fabrication and Magneto-Transport and SQUID Measurements of Sub-micron Spin-valve Structures,” Y.D. Park, D. Temple, K.B. Jung, D. Kumar, P.H. Holloway and S.J. Pearton, J. Vac. Sci. Technol. B 17, 2471 (1999).

712. “Development of Chemically-Assisted Dry Etching Methods for Magnetic Device Structures,” K.B. Jung, H. Cho, K.P. Lee, J. Marburger, F. Sharifi, R.K. Singh, D. Kumar, K.H. Dahmen and S.J. Pearton, J. Vac. Sci. Technol. B 17, 3186 (1999).

713. “p-Ohmic Contact Resistance for GaAs(C)/GaN(Mg),” G. Dang, A.P. Zhang, F. Ren, S.M. Donovan, C.R. Abernathy, W.S. Hobson, S.N.G. Chu, X.A. Cao, R.G. Wilson and S.J. Pearton, Solid-State Electron. 44, 105 (2000).

714. “GaN/AlGaN HBT Fabrication,” F. Ren, H. Han, R. Hickman, J.M. Van Hove, P. Chow, J. Klaassen, J.R. LaRoche, K.B. Jung, H. Cho, X.A. Cao, S. Donovan, R. Kopf, R.G. Wilson, A.G. Baca, R.J. Shul, L. Zhang, C. Willison, C.R. Abernathy and S.J. Pearton, Solid-State Electron. 44, 239 (2000).

715. “GaN pn Junctions: Issues and Developments,” R. Hickman, J. Van Hove, P. Chow, J.J. Klaassen, A. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho and J.R. LaRoche, Solid-State Electron. 44, 377 (2000).

716. “Effects of Interfacial Oxides on Schottky Barrier Contacts to n- and p-type GaN,” X.A. Cao, S.J. Pearton, G. Dang, A.P. Zhang, F. Ren, and J. M. Van Hove, Appl. Phys. Lett. 75, 4130 (1999).

717. “Plasma Etching of Magnetic Multilayers-Effect of Concurrent UV Illumination,” H. Cho, K.P. Lee, Y.B. Hahn, E.S. Lambers and S.J. Pearton, Mat. Sci. Eng. B 67, 145 (1999).

718. “High Current, Common-Base GaN/AlGaN HBTs,” X.A. Cao, G.T. Dang, A.P. Zhang, F. Ren, J.M. Van Hove, J. Klaassen, C.J. Polley, A.M. Wowchack, P.O. Chow, D.J. King, C.R. Abernathy and S.J. Pearton, Electrochem. Solid-State Lett. 3, 144 (2000).

719. “Long-term Stability of Dry Etched MRAM Elements,” K.B. Jung, J. Marburger, F. Sharifi, Y.D. Park, E.S. Lambers and S.J. Pearton, J. Vac. Sci. Technol. A 18, 268 (2000).

720. “Creation of High Resistivity GaN by Implantation of Ti, O, Fe or Cr,” X.A. Cao, S.J. Pearton, G. Dang, A.P. Zhang, F. Ren, R.G. Wilson and J.M. Van Hove, J. Appl. Phys. 87, 1091 (2000).

88

721. “High Selectivity ICP Etching of GaAs Over InGaP,” D.C. Hays, H. Cho, J.W. Lee, M.W. Devre, B.H. Reelfs, D. Johnson, J.N. Sasserath, L.C. Meyer, E. Touissaint, F. Ren, C.R. Abernathy and S.J. Pearton, Appl. Surf. Sci. 156, 76 (2000).

722. “Plasma Damage in p-GaN,” X.A. Cao, A.P. Zhang, G.T. Dang, F. Ren, S.J. Pearton, J.M. Van Hove, R. Hickman, R.J. Shul and L. Zhang, J. Electron. Mater. 29, 256 (2000).

723. “Dry Etch Selectivity of Gd 2O3 to GaN and AlN,” D. Hays, K.P. Lee, B.P. Gila, F. Ren, C.R. Abernathy and S.J. Pearton, J. Electron. Mater. 29, 285 (2000).

724. “Ultra Deep, Low Damage Dry Etching of SiC,” H. Cho, P. Leerungnawarat, D.C. Hays, S.J. Pearton, S.N.G. Chu, R.M. Strong, C.-M. Zetterling, M. Östling and F. Ren, Appl. Phys. Lett. 76, 739 (2000).

725. “Comparative Study of Ni Nanowires Patterned by e-beam Lithography and Fabricated by Life-off and Dry Etching Techniques,” Y. Park, K.B. Jung, M. Overberg, D. Temple, S.J. Pearton and P.H. Holloway, J. Vac. Sci. Technol. B 18, 16 (2000).

726. “Thermal Stability and Etching Characteristics of e-beam Deposited SiO and SiO 2,” J. LaRoche, F. Ren, J. Lothian, J. Hong, S.J. Pearton, E. Lambers, C.H. Chu, C.S. Wu and M. Hoppe, J. Vac. Sci. Technol. B 18, 283 (2000).

727. “Ultraviolet Light Enhancement of Ta2O5 Dry Etch Rates,” K.P. Lee, H. Cho, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, J. Vac. Sci. Technol. B 18, 293 (2000).

728. “Effect of UV Illumination on SiC Dry Etch Rates,” P. Leerungnawarat, H. Cho, S.J. Pearton, C.-M. Zetterling and M. Östling, J. Electron. Mater. 29, 342 (2000).

729. “Temperature Dependence of GaN High Breakdown Voltage Diode Rectifiers,” J.I. Chyi, C.M. Lee, C.C. Chuo, X.A. Cao, G.T. Dang, A.P. Zhang, F. Ren, S.J. Pearton, S.N.G. Chu and R.G. Wilson, Solid-State Electron. 44, 613 (2000).

730. “Surface and Bulk Leakage Current in High Breakdown GaN Rectifiers,” F. Ren, A.P. Zhang, G. Dang, X. Cao, H. Cho, S.N. G. Chu, S.J. Pearton, J.I. Chyi, C.M. Lee and C.C. Chuo, Solid-State Electron. 44, 619 (2000).

731. “High Temperature Characteristics of GaN-based HBTs and BJTs,” X.A. Cao, J.M. Van Hove, J.J. Klaassen, C.J. Polley, A.M. Wowchack, P.P. Chow, D.J. King, F. Ren, G. Dang, A.P. Zhang, C.R. Abernathy and S.J. Pearton, Solid-State Electron. 44, 649 (2000).

732. “Al Composition Dependence of Breakdown Voltage in AlxGa1-xN Schottky Rectifiers,” A.P. Zhang, G. Dang, F. Ren, J. Han, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, J.M. Redwing, X.A. Cao and S.J. Pearton, Appl. Phys. Lett. 76, 1767 (2000).

733. “Selective Dry Etching of InGaP over GaAs in Inductively Coupled Plasmas,” O. Leerungnawarat, H. Cho, D.C. Hays, J.W. Lee, M. Devre, B. Reelfs, D. Johnson, J. Sasserath, C.R. Abernathy and S.J. Pearton, J. Electron. Mater. 29, 586 (2000).

734. “High Voltage GaN Schottky Rectifiers,” G. Dang, A. Zhang, F. Ren, X. Cao, S.J. Pearton, H. Cho, J. Han, J.-I. Chyi, C.-M. Lee, C.-C. Chuo, S.N.G. Chu and R.G. Wilson, IEEE Trans Electron. Dev. 47, 692 (2000).

735. “Low Temperature SiN x and SiO2 Film Processing by ICP-CVD,” J.W. Lee, K.D. MacKenzie, D. Johnson, J.N. Sasserath, S.J. Pearton and F. Ren, J. Electrochem. Soc. 147, 1481 (2000).

736. “Forward Turn-on and Reverse Blocking Characteristics of GaN Schottky and p- i-n Rectifiers,” A. Zhang, G. Dang, F. Ren, J. Han, H. Cho, S.J. Pearton, J.-I. Chyi, T.-E. Nee, C.M. Lee, C.C. Chuo and S.N.G. Chu, Solid-State Electron 44, 1157 (2000).

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737. “Simulation of GaN/AlGaN HBTs: Part I npn Structures,” X. Cao, J. M. Van Hove, J. Klaassen, C. Polley, A. Wowchak, P. Chow, D. King, A. Zhang, G. Dang, C. Monier, S.J. Pearton and F. Ren, Solid-State Electron. 44, 1255 (2000).

738. “Simulation of GaN/AlGaN HBTs: Part II – pnp Structures,” X. Cao, J.M. Van Hove, J. Klaassen, C. Polley, A. Wowchack, P. Chow, D. King, A. Zhang, G. Dang, C. Monier, S.J. Pearton and F. Ren, Solid-State Electron. 44, 1261 (2000).

739. “Effect of Thermal Stability of GaN epi- layer on Schottky Diodes,” K.N. Lee, X. Cao, C.R. Abernathy, S.J. Pearton, A. Zhang, F. Ren, R. Hickman and J.M. Van Hove, Solid-State Electron. 44, 1203 (2000).

740. “GaN Electronics for High Power, High Temperature Application,” S.J. Pearton, F. Ren, A. Zhang, G. Dang, X. Cao, H. Cho, C.R. Abernathy, J. Han, A.G. Baca, C. Monier, D. Chang, R. Shul, J. Van Hove, S.N.G. Chu, M. Hong, A.Y. Polyakov, J.I. Chyi and J.M. Redwing, Electrochem. Soc. Interface 9 (2), 34 (2000).

741. “DC Characteristics of pnp AlGaN/GaN HBTs,” A.P. Zhang, G. Dang, F. Ren, J. Han, A.G. Baca, R.J. Shul, H. Cho, C. Monier, X.A. Cao, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 76, 2943 (2000).

742. “Properties and Effects of Hydrogen in GaN,” S.J. Pearton, H. Cho, F. Ren, J.-I. Chyi, J. Han and R.G. Wilson, MRS Internet J. Nitride Semicond. Res. 551, W10-6 (2000).

743. “Surface Conversion Effects in Plasma-Damaged p-GaN,” X. Cao, S.J. Pearton, G. Dang, A. Zhang, F. Ren, R.J. Shul, L. Zhang, R. Hickman and J.M. Van Hove, MRS Internet J. Nitride Semicond. Res. 551, W10-8 (2000).

744. “Photoluminescence Enhancement and Morphological Properties of Carbon Co-doped GaN: Er,” M. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, MRS Internet J. Nitride Semicond. Res. 551, W11-62 (2000).

745. “High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar

Discharges,” A. Zhang, G. Dang, F. Ren, X. Cao, H. Cho, E. Lambers, S.J. Pearton, A.J. Shul, L. Zhang, A.G. Baca, R. Hickman and J.M. Van Hove, MRS Internet J. Nitride Semicond. Res. 551, W11-66 (2000).

746. “Processing and Device Performance of GaN Power Rectifiers,” A. Zhang, G. Dang, X. Cao, H. Cho, F. Ren, J. Han, J.-I. Chyi, C.-M. Lee, T.-E. Nee, C.-C. Chuo, G.C. Chi, S.N.G. Chu, R.G. Wilson and S.J. Pearton, MRS. Internet J. Nitride Semicond. Res. 551, W11-67 (2000).

747. “Comparison of Implant Isolation Species for GaN FET Structures,” G. Dang, X. Cao, F. Ren, S.J. Pearton, H. Han, A.G. Baca, R.J. Shul and R.G. Wilson, MRS Internet J. Nitride Semicond. Res. 551, W11-68 (2000).

748. “Effect of Mg Ionization Efficiency on Performance of npn AlGaN/GaN HBTs,” C. Monier, S.J. Pearton, P.C. Change, A.G. Baca and F. Ren, Appl. Phys. Lett. 76, 3115 (2000).

749. “Devices for High Frequency Applications,” S.J. Pearton and F. Ren, in The Encyclopedia of Materials: Science and Technology, ed. K. Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer and S. Mahajan (Elsevier, Oxford 2000).

750. “Temperature Dependence and Current Transport Mechanisms in AlxGa1-xN Schottky Rectifiers,” A.P. Zhang, G. Dang, F. Ren, J. Han, A.Y. Polyakov, N.B. Smirnov, A.N. Govorkov, J.M. Redwing, H. Cho and S.J. Pearton, Appl. Phys. Lett. 76, 3816 (2000).

751. “A Global Self-Consistent Model of a Capacitively and Inductively Coupled Plasma Etching System,” Y.B. Hahn and S.J. Pearton, Korean J. Chem. Eng. 17, 304 (2000).

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752. “Electrical Properties and Defect States in Undoped, High-Resistivity GaN Films used in High-Power Rectifiers,” A Polyakov, N.B. Smirnov, A.V. Govorkov, G. Dang, A.P. Zhang, F. Ren, X.A. Cao, S.J. Pearton and R.G. Wilson, J. Vac. Sci Technol. B 18, 1237 (2000).

753. “Common-Base Operation of GaN BJTs,” X. Cao, G. Dang, A.P. Zhang, F. Ren, C.R. Abernathy, S.J. Pearton, J.M. Van Hove, J.J. Klaassen, C.J. Polley, A.M. Wowchack, P.P. Chow, D.J. King and S.N.G. Chu, Electrochem. Solid-States Lett. 3, 333 (2000).

754. “Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides,” K. Lorenz, R. Vianden, S.J. Pearton, C.R. Abernathy and J.M. Zavada, MRS Internet Journal of Nitride Semiconductor Research, 5, 5 (2000).

755. “Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN,” S. Kucheyev, J.S. Williams, C. Jagadish, G. Li and S.J. Pearton, Appl. Phys. Lett. 76, 3899 (2000).

756. “GaN n- and p-type Schottky Diodes: Effect of Dry Etch Damage,” X. Cao, S.J. Pearton, G.T. Dang, A.P. Zhang, F. Ren and J.M. Van Hove, IEEE Trans. Electron. Dev. 47, 1320 (2000).

757. “High Breakdown Voltage Au/Pt/GaN Schottky Diodes,” G. Dang, A.P. Zhang, M. Mshewa, F. Ren, J.-I. Chyi, C.-M. Lee, C. Chuo, G.C. Chi, J. Han, S.N.G. Chu, R.G. Wilson, X. Cao and S.J. Pearton, J. Vac. Sci. Technol. A 18, 1135 (2000).

758. “ICP-Induced Etch Damage in GaN p-n Junctions,” R.J. Shul, L. Zhang, A.G. Baca, C. Willison, J. Han, S.J. Pearton and F. Ren, J. Vac. Sci. Technol. A 1, 1139 (2000).

759. “Schottky Diode Measurements of Dry Etch Damage in n- and p-type GaN,” X. Cao, A.P. Zhang, G. Dang, R. Ren, S.J. Pearton, R.J. Shul and L. Zhang, J. Vac. Sci. Technol. A 18, 1144 (2000).

760. “Effect of N2 Discharge Treatment on AlGaN/GaN HEMT Ohmic Contacts using ICP,” A.P. Zhang, G. Dang, F. Ren, J. Van Hove, J.J. Klaassen, P.P. Chow, X. Cao and S.J. Pearton, J. Vac. Sci. Technol. A18, 1149 (2000).

761. “Comparison of Plasma Chemistries for Dry Etching of Ta 2O5,” K.P. Lee, K.B. Jung, R.K. Singh, S.J. Pearton, C. Hobbs and P. Tobin, J. Vac. Sci. Technol. A 18, 1169 (2000).

762. “Advanced Selective Dry Etching of GaAs/AlGaAs in High Density ICPs,” J.W. Lee, M. Devre, B. Reelfs, D. Johnson, J.N. Sasserath, F. Clayton, D. Hays and S.J. Pearton, J. Vac. Sci. Technol. A 18, 1220 (2000).

763. “Effects of UV Illumination on Dry Etch Rates of NiFe-Based Magnetic Multilayers,” H. Cho, K.P. Lee, Y.B. Hahn, E.S. Lambers and S.J. Pearton, J. Vac. Sci. Technol. A 18, 1273 (2000).

764. “Surface Morphology and Removal Rates for Dry- and Wet-Etched Novel Resonator Materials: Part I La3Ga5.5Ta0.5O14,” D. Hays, P. Leerungnawarat, S.J. Pearton, G. Archibald and R.C. Smythe, Appl. Surf. Sci. 165, 127 (2000).

765. “Surface Morphology and Removal Rates for Dry- and Wet-Etched Novel Resonator Materials: Part II La 3Ga5.5Nb0.5O14,” D. Hays, P. Leerungnawarat, S.J. Pearton, G. Archibald and R.C. Smythe, Appl. Surf. Sci. 165, 135 (2000).

766. “Contact Resistivity and Transport Mechanisms in W Contacts to p- and n-GaN,” A. Zeitouny, M. Eizenberg, S.J. Pearton and F. Ren, J. Appl. Phys. 88, 2048 (2000).

91

767. “ICP Etching in ICl- and IBr-Based Chemistries, Part I: GaAs, GaSb and AlGaAs,” Y. Hahn, D.C. Hays, H. Cho, K.B. Jung, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and R.J. Shul, Plasma Chem. Plasma Proc. 20, 405 (2000).

768. “ICP Etching in ICl- an IBr-based Chemistries, Part II: InP, InSb, InGaP and InGaAs,” Y. Hahn, D.C. Hays, H. Cho, K.B. Jung, E.S. Lambers, C.R. Abernathy, S.J. Pearton, W.S. Hobson and R.J. Shul, Plasma Chem. Plasma Proc. 20, 417 (2000).

769. “Simulation and Design of InGaAsN-based HBTs for Complementary Low-Power Applications,” C. Monier, P.C. Chang, N.Y. Li, J.R. LaRoche, A.G. Baca, H.Q. Hou, F. Ren and S.J. Pearton, Solid-State Electron. 44, 1515 (2000).

770. “Unusual Behavior of the Electrical Properties of GaN p-i-n Rectifiers Caused by the Presence of Deep Centers and by Migration of Shallow Donors,” A.Y. Polyakov, N.B. Smirnov, A. Govorkov, A.P. Zhang, F. Ren, S.J. Pearton, J.-I. Chyi, T.-E. Nee, C.-C. Chuo and C.-M. Lee, Solid-State Electron. 44, 1549 (2000).

771. “Spatial Distribution of Electrical Properties in GaN p-i-n Rectifiers,” A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.P. Zhang, F. Ren, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee and C.C. Chuo, Solid-State Electron. 44, 1591 (2000).

772. “The Effect of Er Concentration on the Morphology and Photoluminescence of GaN: Er,” M.E. Overberg, J. Brand, J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and J.M. Zavada, J. Electrochem. Soc. 147, 3117 (2000).

773. “Corrosion-Free Dry Etch Patterning of MRAM Stacks – Effects of UV Illumination,” H. Cho, K.P. Lee, K.B. Jung, S.J. Pearton, J. Marburger, F. Sharifi, Y.B. Hahn and J.R. Childress, J. Appl. Phys. 87, 6397 (2000).

774. “Cl2-based Dry Etching of GaN Films Under ICP Conditions,” Y.H. Ihn, J.S. Perch, Y.B. Hahn, K.S. Hahm, Y.S. Lee, B.C. Cho, K.Y. Lim, H.J. Lee and S.J. Pearton, J. Vac. Sci. Technol. A 18, 2169 (2000).

775. “GaN Electronics,” S.J. Pearton and F. Ren, Adv. Mater. 12, 1571 (2000). 776. “ICP Etching of Doped GaN Films with Cl2/Ar Discharges,” B.C. Cho, Y.H. Ihn, Y.B.

Hahn, K.S. Nahm, Y.S. Lee and S.J. Pearton, J. Electrochem. Soc. 147, 3914 (2000). 777. “Fabrication and Performance of GaN Electronic Devices,” S.J. Pearton, F. Ren, A.P.

Zhang and K.P. Lee, Mat. Sci. Eng. R. 30, 55 (2000). 778. “Gd2O3/GaN MOSFET,” J.W. Johnson, B. Luo, F. Ren, B.P. Gila, W. Krishnamoorthy,

C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee and C.C. Chuo, Appl. Phys. Lett. 77, 3230 (2000).

779. “Npn AlGaN/GaN HBTs and GaN BJTs with Regrown C-doped GaAs in the Base Region,” G. Dang, B. Luo, A.P. Zhang, X.A. Cao, F. Ren, S.J. Pearton, H. Cho, W.S. Hobson, J. Lopata, J.M. Van Hove, J.J. Klaassen, C.J. Polley, A.M. Wowchack, P.P. Chow and D.J. King, Solid-State Electron. 44, 2097 (2000).

780. “The Effect of N2 Plasma Damage on AlGaAs/InGaAs/GaAs HEMTs: Part I: DC Characteristics,” V.P. Trivedi, C.H. Hsu, B. Luo, X. Cao, J.R. LaRoche, F. Ren, S.J. Pearton, C.R. Abernathy, E. Lambers, M. Hoppe, C.S. Wu, J.N. Sasserath and J.W. Lee, Solid-State Electron. 44, 2101 (2000).

781. “Processing Techniques for InGaAs/InAlAs/InGaAs Spin-FETs,” J.R. LaRoche, F. Ren, D. Temple, S.J. Pearton, J.M. Kuo, A.G. Baca, A. Chang, Y.D. Park, Q. Hudspeth, A.F. Hebard and S.B. Arnason, Solid-State Electron. 44, 2117 (2000).

782. “A Review of Dry Etching of GaN and Related Materials,” S.J. Pearton, R.J. Shul and F. Ren, MRS Internet J. Nitride Semicond. Res. 5, 11 (2000).

92

783. “Temperature-Dependent Performance of GaN Schottky Diode Rectifiers,” X. Cao, G. Dang, A.P. Zhang, F. Ren, S.J. Pearton, J.I. Chyi, G.C. Chi, H. Han, S.N.G. Chu and R.G. Wilson, mat. Sci. Forum 338-342, 1632 (2000).

784. “High Pressure Process to Produce GaN Crystals,” D. Gilbert, A. Novikov, N. Patrin, J. Budai, F. Kelly, R. Chodelka, R. Abbaschian, S.J. Pearton and R. Singh, Appl. Phys. Lett. 77, 4172 (2000).

785. “Inductively-Coupled High-Density Plasma-Induced Damage of GaN MESFETs,” R.J. Shul, L. Zhang, A.G. Baca, C.G. Willison, J. Han, S.J. Pearton, K.P. Lee and F. Ren, Solid-State Electron. 45, 13 (2001).

786. “Advanced Processing of GaN and Related Materials,” X. Cao, S.J. Pearton and F. Ren, Critical Reviews in Solid-State and Materials Sciences 25, 279 (2000).

787. Electrical Properties and Spectra of Deep Centers in GaN p-i-n Rectifier Structures,” A.Y. Polyakov, N. Smirnov, A. Govorkov, A. Zhang, F. Ren, S.J. Pearton, J. Chyi, T. Nee, C. Chou and C. Lee, J. Electron Mater. 30, 147 (2001).

788. “Comparison of F2 Plasma Chemistries for Deep Etching of SiC,” P. Leerungnawarat, K.P. Lee, S.J. Pearton, F. Ren and S.N.G. Chu, J. Electron. Mater. 30, 202 (2001).

789. “Dry Etching Mechanism of Cu and Magnetic Materials with VV Illumination,” Y.B. Hahn, S.J. Pearton, H. Cho and K.P. Lee, mat. Sci. Eng. B 79, 20 (2001).

790. “Lateral AlGaN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage,” A.P. Zhang, J.W. Johnson, F. Ren, J. Han, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, J.M. Redwing, K.P. Lee and S.J. Pearton, Appl. Phys. Lett. 78, 823 (2001).

791. “Comparison of Dry and Wet Etch Processes for Patterning SiO2/TiO 2 DBR for VCSELs,” G. Dang, H. Cho, K. Ip, S.J. Pearton, S.N.G. Chu, J. Lopata, W.S. Hobson, L.M.F. Chirovsky and F. Ren, J. Electrochem. Soc. 148, 625 (2001).

792. “Self-Aligned Process for Emitter and Base Regrowth GaN HBTs and BJTs,” K.P. Lee, A. Zhang, G. Dang, F. Ren, J. Han, S.N.G. Chu, W.S. Hobson, J. Lopata, C.R. Abernathy, S.J. Pearton and J.W. Lee, Solid-State Electronics 45, 243 (2001).

793. “Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs HBTs,” C.H. Hsu, C.C. Chen, B. Luo, F. Ren, S.J. Pearton, C.R. Abernathy. J.W. Lee, K.D. Mackenzie and J.N. Sasserath, Solid-State Electron. 45, 275 (2001).

794. “GaN Bipolar Junction Transistors with Regrown Emitters,” A.P. Zhang, J. Han, F. Ren, K.E. Waldrip, C.R. Abernathy, B. Luo, G. Dang, J.W. Johnson, K.P. Lee and S.J. Pearton, Electrochem. Solid-State Lett. 4, G39 (2001).

795. “Schottky Rectifiers Fabricated on Free-standing GaN Substrates,” J.W. Johnson, F. Ren, B. Gila, M.E. Overberg, C.R. Abernathy, J.I. Chyi, C.C. Chuo, T.E. Nee, K.P. Lee, S.S. Park, Y.J. Park and S.J. Pearton, Solid-State Electronics 45, 405 (2001).

796. “Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN,” D.G. Kent, K.P. Lee, A.P. Zhang, B. Luo, M.E. Overberg, C.R. Abernathy, F. Ren, K.D. Mackenzie, S.J. Pearton and Y. Nakagawa, Solid-State Electron. 45, 467 (2001).

797. “Comparison of GaN p- i-n and Schottky Rectifier Performance,” A.P. Zhang, G. Dang, F. Ren, H. Cho, K.-P. Lee, S.J. Pearton, J.I. Chyi, T.E. Nee, C.-M. Lee and C.C. Chuo, IEEE Trans. Electron. Dev. ED 48, 407 (2001).

798. “Simulation of NPN and PNP AlGaN/GaN HBT Performance: Limiting Factors and Optimum Design,” C. Monier, F. Ren, J. Han, P. Chang, R.J. Shul, K.P. Lee, A. Zhang, A.G. Baca and S.J. Pearton, IEEE Trans. Electron. Dev. ED 48, 427 (2001).

93

799. “Device Characteristics of the GaAs/InGaAsN/GaAs pnp Double HBT,” P. Chang, N. Li, A.G. Baca, H.O. Hou, C. Monier, J. LaRoche, F. Ren and S.J. Pearton, IEEE Electron Dev. Lett. EDL-22, 113 (2001).

800. “Ion Implantation into GaN,” S.O. Kucheyev, J.S. Williams and S.J. Pearton, Mat. Sci. Eng. R 33, 51 (2001).

801. “GaN Electronics for High Power, High Temperature Applications,” S.J. Pearton, F. Ren, A.P. Zhang, G. Dang, X. Cao, K.P. Lee, H. Cho, B. Gila, J.W. Johnson, C. Monier, C.R. Abernathy, J. Han, A.G. Baca, J.I. Chyi, C.M. Lee, T.E. Nee, C. Chuo and S.N.G. Chu, Mat. Sci. Eng. B82, 227 (2001).

802. “Pnp InGaAsN-based HBT with Graded Base Doping,” C. Monier, A.G. Baca, P.C. Chang, N.Y. Li, H.O. Hou, F. Ren and S.J. Pearton, Electronics Letters 37, 1 (2001).

803. “Wet Chemical Etching of LiGaO2 and LiAlO2,” C. Hsu, K. Ip, J.W. Johnson, S.N.G. Chu, O. Kryliouk, S.J. Pearton, L. Li, B.H.T. Chai, T.J. Anderson and S.J. Pearton, Electrochem. Solid-State Lett. 4, C35 (2001).

804. “Cl2Ar High Density Plasma Damage in GaN Schottky Diodes,” A.P. Zhang, G. Dang, F. Ren, X. Cao, H. Cho, E. Lambers, S.J. Pearton, R.J. Shul, L. Zhang, A.G. Baca, R. Hickman and J.M. Van Hove, J. Electrochem Soc. 147, 719 (2000).

805. “Effect of C-Doping on GaN: Er,” M. Overberg, C.R. Abernathy, J.D. MacKenzie, S.J. Pearton, R.G. Wilson and J.M. Zavada, Mat. Sci. Eng. B 81, 121 (2001).

806. “Characterization and Annealing of Eu-Doped GaN,” M. Overberg, K.N. Lee, C.R. Abernathy, S.J. Pearton, W.S. Hobson, R.G. Wilson and J.M. Zavada, Mat. Sci. Eng. B 81, 150 (2001).

807. “Nanoscale Magnetic Regions Formed in GaN Implanted with Mn,” N. Theodoropoulou, K.P. Lee, M.E. Overberg, S.N.G. Chu, A.F. Hebard, C.R. Abernathy, S.J. Pearton and R.G. Wilson, J. Nanoscience and Nanotechnology, 1, 101 (2001).

808. “Magnetic and Structural Properties of Mn-Implanted GaN,” N. Theodoropoulou, A.F. Hebard, M. Overberg, C.R. Abernathy, S.J. Pearton, S.N.G. Chu and R.G. Wilson, Appl. Phys. Lett. 78, 3475 (2001).

809. “Level Set Approach to Simulation of Feature Profile Evaluation in a High Density Plasma-Etching System,” J.H. Im, Y.B. Hahn and S.J. Pearton, J. Vac. Sci. Technol. B 19, 701 (2001).

810. “Process Development for Small Area GaN/AlGaN HBTs,” K.P. Lee, A.P. Zhang, G. Dang, F. Ren, J. Han, W.S. Hobson, J. Lopata, C.R. Abernathy, S.J. Pearton and J.W. Lee, J. Vac. Sci. Technol. A 19, 1846 (2001).

811. “High Density Plasma Via Hole Etching in SiC,” H. Cho, K.P. Lee, P. Leerungnawarat, S.N.G. Chu, F. Ren, S.J. Pearton and C.M. Zetterling, J. Vac. Sci. Technol. A 19, 1878 (2001).

812. “Utilization of Optical Emission Spectroscopy for End-Point Detection During AlGaAs/GaAs and InGaP/GaAs Etching in BCl3/N2 Inductively Coupled Plasmas,” J.W> Lee, M. Jeon, G. Cho, H. Kim, S. Chang, K. Kim, M. Devre, Y. See, R. Westerman, D. Johnson, J.N. Sasserath and S.J. Pearton, J. Electrochem. Co. 148, G472 (2001).

813. “Implantation-Produced Structural Damage in InxGa1-xN,” S.O. Kucheyev, J.S. Williams, J. Zou, S.J. Pearton and Y. Nakagawa, Appl. Phys. Lett. 79, 602 (2001).

814. “Study of Radiation Inducted Resistance Mechanisms in GaAs MESFET and TLM Structures,” B. Lou, J.W. Johnson, D. Schoenfeld, S.J. Pearton and F. Ren, Solid-State Electron. 45, 1149 (2001).

94

815. “Thermal Quenching in GaN(Er),” J.M. Zavada, M. Thaik, U. Hommerich, J.D. MacKenzie, C.R. Abernathy and S.J. Pearton, J. Alloys Compd. 300/301,207 (2000).

816. “Comparison of the Effects of H2 and D2 Plasma Exposure in AlGaAs/GaAs HEMTs,” B. Luo, F. Ren, K. Lee, S.J. Pearton, C.S. Wu, R.F. Kopf, D. Johnson and J.N. Sasserath, Solid-State Electron. 45, 1613 (2001).

817. “Comparison of the Effects of H2 and D2 Plasma Exposure on GaAs MESFETs,” B. Luo, F. Ren, K. Lee, S.J. Pearton, C.S. Wu, D. Johnson and J.N. Sasserath, Solid-State Electron. 45, 1625 (2001).

818. “Small and Large Signal Performance and Gain-Switching of Intra-Cavity Contacted, Shallow Implant Apertured VCSELs,” W.S. Hobson, J. Lopata, L. Chivorsky, S.N.G. Chu, G. Dang, F. Ren, M. Taychi, D.C. Kilper and S.J. Pearton, Solid-State Electron. 45, 1639 (2001).

819. “Understanding of Etch Mechanism and Etch Depth Distribution in ICP Etching of GaAs,” J.W. Lee, M.H. Jeon, M. Devre, K.D. MacKenzie, D. Johnson, J.N. Sasserath, S.J. Pearton, F. Ren and R.J. Shul, Solid-State Electron. 45, 1687 (2001).

820. “Indication of Ferromagnetism in MBE-derived n-type GaMnN,” M.E. Overberg, C.R. Abernathy, S.J. Pearton, N.A. Theodoropoulou, K.T. McCarthy and A.F. Hebard, Appl. Phys. Lett. 79, 1312 (2001).

821. “SiO2/Gd2O3/GaN MOSFETs,” J.W. Johnson, B.P. Gila, B. Luo, K.P. Lee, C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee, C.C. Chou and F. Ren, J. Electrochem. Soc. 148. G303 (2001).

822. “Vertical and Lateral GaN Rectifiers on Free-Standing GaN Substrates,” A.P. Zhang, J.W. Johnson, B. Luo, F. Ren, S.J. Pearton, S.S. Park, Y.J. Park and J.I. Chyi, Appl. Phys. Lett. 79, 1555 (2001).

823. “High-Speed Modulation of 850nm Intracavity Contacted, Shallow Implant Apertured VCSELs,” G. Dang, W.S. Hobson, C.M.F. Chirovsky, J. Lopata, M. Tyalki, S.N.G. Chu, F. Ren and S.J. Pearton, IEEE Photonics Technology Lett. 13, 924 (2001).

824. “Hydrogenation Effects on AlGaAs/GaAs HBTs,” B. Luo, K. Ip, F. Ren, K.P. Lee, S.J. Pearton and C.R. Abernathy, Solid-State Electron. 45, 1733 (2001).

825. “Electrical Effects of N2 Plasma Exposure on Dry Etch Damage in p- and n-GaN Schottky Diodes,” D.G. Kent, K.P. Lee, A.P. Zhang, B. Luo, M.E. Overberg, C.R. Abernathy, F. Ren, K.D. MacKenzie, S.J. Pearton and Y. Nakagawa, Solid-State Electron. 45, 1837 (2001).

826. “Fermi Level Dependence of Hydrogen Diffusivity in GaN,” A.Y. Polyakov, N. Smirnov, S.J. Pearton, F. Ren, B. Theys, F. Jorard, Z. Takuma, V.A. Dmitriev, A. Nikolaev, A. Usikov and I. Nikitina, Appl. Phys. Lett. 79, 1834 (2001).

827. “dc and rf Performance of Proton-Irradiated AlGaN/GaN HEMTs,” B. Luo, J.W. Johnson, F. Ren, K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T.N. Fogarty, R. Wilkins, A.M. Dabiran, A.M. Wowchack, C.J. Polley, P.P. Chow and A.G. Baca, Appl. Phys. Lett. 79, 2196 (2001).

828. “Effect of Gate Length on dc Performance of AlGaN/GaN HEMTs Grown by MBE,” J.W. Johnson, A.G. Baca, R. Briggs, R.J. Shul, J. Wendt, C. Monier, F. Ren, S.J. Pearton, A. Dabiran, A. Wowchack, C.J. Polley and P.P. Chow, Solid-State Electron. 45, 1979 (2001).

95

829. “Effect of PECVD of SiO 2 Passivation Layers on GaN and InGaP,” K.W. Baik, P. Park, B. Luo, K.P. Lee, J. Shin, C.R. Abernathy, W.S. Hobson, S.J. Pearton and F. Ren, Solid-State Electron. 45, 2093 (2001).

830. “Co-Implantation of Be + O and Mg + O into GaN,” D.G. Kent, M.E. Overberg and S.J. Pearton, J. Appl. Phys. 90, 3750 (2001).

831. “Electronic States in Modulation-Doped p-AlGaN/GaN Superlattices,” A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky, P.E. Norris, S.J. Pearton, J. Van Hove, A.M. Wowchack and P.P. Chow, J. Appl. Phys. 90, 4032 (2001).

832. “Device Series Resistance Calculations for Vertical Cavity Surface-Emitting Lasers,” G. Dang, B. Luo, F. Ren, W.S. Hobson, J. Lopata, S.N.G. Chu and S.J. Pearton, Electrochemical and Solid-State Lett. 4, G112 (2001).

833. “Magnetic Properties of Fe- and Mn-Implanted SiC,” N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, Electrochem. Solid-State Lett. 4, G119 (2001).

834. “Comparison of Plasma Etch Chemistries for MgO,” K.H. Baik, P.Y. Park, B.P. Gila, J.H. Shin, C.R. Abernathy, S. Norasetthekul, l, B. Luo, F. Ren, E.S. Lambers and S.J. Pearton, Appl. Surf. Sci. 183, 26 (2001).

835. “Electrical Effects of PECVD of SiN x on GaAs Schottky Rectifiers,” B. Luo, J.W. Johnson, F. Ren, K.H. Baik and S.J. Pearton, J. Appl. Phys. 90, 4800 (2001).

836. “Magnetic Properties of p-type GaMnP,” Grown by MBE,” M.E. Overberg, B.P. Gila, C.R. Abernathy, S.J. Pearton, N.A. Theodoropoulou, K.T. McCarthy, S.B. Arnason and A.F. Hebard, Appl. Phys. Lett. 79, 3128 (2001).

837. “p-Ohmic Contact Study for Intracavity Contacts in AlGaAs/GaAs VCSELs,” B. Luo, G. Dang, A.P. Zhang, F. Ren, J. Lopata, S.N.G. Chu, W.S. Hobson and S.J. Pearton, J. Electrochem. Soc. 148, G676 (2001).

838. “Magnetic Properties of Mn- and Fe-Implanted p-GaN,” N. Theodoropoulou, M.E. Overberg, S.N.G. Chu, A.F. Hebard, C.R. Abernathy, R.G. Wilson, J.M. Zavada, K.P. Lee and S.J. Pearton, Phys. Stat. Sol. B 228, 337 (2001).

839. “Dry Etch Chemistries for TiO 2 Them Films,” S. Norasetthekul, P.Y. Park, K.H. Baik, K.P. Lee, J.H. Shin, B.S. Jeong, V. Shishodia, E.S. Lambers, D.P. Norton and S.J. Pearton, Appl. Surf. Sci. 185, 27 (2001).

840. “Wet and Dry Etching of Sc2O3,” P.Y. Park, S. Norasetthekul, K.P. Lee, K.H. Baik, B.P. Gila, J.H. Shin, C.R. Abernathy, F. Ren, E.S. Lambers and S.J. Pearton, Appl. Surf. Sci. 185, 52 (2001).

841. “Characterization of High Dose Fe Implantation into p-GaN,” N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson and J.M. Zavada, Appl. Phys. Lett. 79, 3452 (2001).

842. “Role of Annealing Conditions and Surface Treatment on Ohmic Contacts to p-GaN and p-Al0.1Ga0.9N Superlattices,” A. Zhang, B. Luo, J.W. Johnson, F. Ren, J. Han and S.J. Pearton, Appl. Phys. Lett. 79, 3636 (2001).

843. “Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs,” B. Gila, J. Johnson, M. Mehandru, B. Luo, A. Onstine, K.K. Allums, V. Krishnamoorthy, S. Bates, C.R. Abernathy, F. Ren and S.J. Pearton, Phys. Stal. Solidi A 188, 239 (2001).

844. “Phototransistor Measurements in AlGaN/GaN HBTs,” L. Chernyak, A. Osinsky, S.J. Pearton and F. Ren, Electronics Lett. 37. 1411 (2001).

96

845. “Electrical and Optical Properties of Modulation-Doped p-AlGaN/GaN Superlattices,” A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky, P.E. Norris, S.J. Pearton, J. Van Hove, A. Wowchack and P. Chow, Appl. Phys. Lett. 79, 4372 (2001).

846. “Hydrogen-Assisted Pulsed-Laser Deposition of Epitaxial CeO2 Films on (001) InP,” D.P. Norton, S.J. Pearton, H.M. Christen and J.D. Budai, Appl. Phys. Lett. 80, 106 (2002).

847. “Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers,” J.W. Johnson, A.P. Zhang, B. Luo, S.J. Pearton, S.S. Park, Y.D. Park and J.-I. Chyi, IEEE Trans. Electron. Dev. 49, 32 (2002).

848. “Microstructure and Thermal Stability of AlN Thin Films Deposited at Low Temperature on Si,” K. Harris, B.P. Gila, J. Des Roches, K.N. Lee, J.D. MacKenzie, C.R. Abernathy, F. Ren and S.J. Pearton, J. Electrochem. Soc. 149, G128 (2002).

849. “Surface Passivation of AlGaN/GaN HEMTs Using MBE-Grown MgO or Sc2O3,” B. Luo, J.W. Johnson, B. Gila, A. Onstine, C. Abernathy, F. Ren, S.J. Pearton, A.G. Baca, A. Dabiran, A. Wowchack and P.P. Chow, Solid-State Electron, 46, 467 (2002).

850. “Comparison of AlGaN/GaN HEMTs grown on SIC or Sapphire,” J.W. Johnson, J. Han, AG. Baca, R. Briggs, R.J. Shul, J. Wendt, C. Monier, F. Ren, B. Luo, S.N.G. Chu, D. Tsvetkov and S.J. Pearton, Solid-State Electron. 46, 513 (2002).

851. “High Breakdown MIM Structures on Bulk AlN,” B. Luo, J. Johnson, O. Kryliouk, F. Ren, S.J. Pearton, S.N.G. Chu, A. Nikolaev, V. Dmitriev and T.J. Anderson, Solid-State Electron. 46, 573 (2002).

852. “Influence of 60Co γ-rays on dc Performance of AlGaN/GaN HEMTs,” B. Luo, J.W. Johnson, F. Ren, K. Allums, C.R. Abernathy, S.J. Pearton, A.M. Dabiran, A. Wowchack, C.J. Polley, P.P. Chow, D. Schoenfeld and A.G. Baca, Appl. Phys. Lett. 80, 604 (2002).

853. “Etch Characteristics of HfO 2 Films on Si Substrates,” S. Norasetthekul, P. Park, K. Baik, K.P. Lee, J. Shin, B.S. Jeong, V. Shishodia, D.P. Norton and S.J. Pearton, Appl. Surf. Sci. 187, 77 (2002).

854. “Optimization of Gas Flow and Etch Depth Uniformity for Plasma Etching of Large Area GaAs Wafers,” J.W. Lee, P.G. Jung, M. Devre, R. Westermann and S.J. Pearton, Solid-State Electron. 46, 685 (2002).

855. “Finite Difference Analysis of Thermal Characteristics of CW Operation of 850 nm Lateral Current Injection and Implant-Apertured VCSEL with Flip-Chip Design,” R. Mehandru, G. Dang, S. Kim, F. Ren, W.S. Hobson, J. Lopata, S.J. Pearton, W. Change and H. Shen, Solid-State Electron. 46, 699 (2002).

856. “Effect of PECVD of SiN x on n-GaN Schottky rectifiers,” B. Luo, J.W. Johnson, F. Ren K.W. Baik and S.J. Pearton, Solid-State Electron. 46, 705 (2002).

857. “Development of Advanced Plasma Process with an OES-Based end-Point Technique for Etching of AlGaAs over GaAs in Manufacture of HBTs,” J.W. Lee, M. Jeon, H. Kim, S. Chang, K. Kim, M. Devre, D. Johnson, J. Sasserath and S.J. Pearton, Solid-State Electron. 46, 773 (2002).

858. “Proton and Gamma-Ray Irradiation Effects on InGaP/GaAs HBTs,” B. Luo, J.W. Johnson, F. Ren, K.K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T.N. Fogarty, R. Wilkins and D. Schoenfeld, J. Electrochem. Soc. 149, G213 (2002).

859. “Effects of High Energy Proton Irradiation on dc Performance of GaAs MESFETs,” B. Luo, J. Johnson, F. Ren, K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T.N. Fogarty and R. Wilkins, J. Electrochem. Soc. 149, G236 (2002).

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860. “Influence of M9O3 Passivation on AlGaN/GaN HEMTs,” B. Luo, J.W. Johnson, J. Kim, R. Mehandru, F. Ren, B. Gila, A. Onstine, C.R. Abernathy, S.J. Pearton, A.G. Baca, R. Briggs, R.J. Shul, C. Monier and J. Han, Appl. Phys. Lett. 80, 1661 (2002).

861. “GaN pnp BJTs Operated to 250°C,” A.P. Zhang, G. Dang, F. Ren, J. Han, C. Monier, A.G. Baca, X.A. Cao, H. Cho, C.R. Abernathy and S.J. Pearton, Solid-State Electron. 46, 933 (2002).

862. “1.6A GaN Schottky Rectifiers on Bulk GaN Substrates,” J.W. Johnson, B. Luo, F> Ren, D. Palmer, S.J. Pearton, S.S. Park, Y.J. Park and J.I. Chyi, Solid-State Electron. 46, 911 (2002).

863. “Influence of SiO 2 PECVD Layers on p-GaN Rectifiers,” K.A. Baik, B. Luo, S.J. Pearton and F. Ren, Solid-State Electron. 46, 803 (2002).

864. “Evaluation of RTP Systems for use in CMOS Fabrication,” V. Trivedi and S.J. Pearton, Solid-State Electron. 46, 777 (2002).

865. “Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs,” A.G. Baca, C. Monier, P.C. Chang, R.D. Briggs, M.G. Amendariz and S.J. Pearton, Solid-State Electron. 46, 797 (2002).

866. “High-Power GaN Electronic Devices,” A.P. Zhang, F. Ren, T.J. Anderson, C.R. Abernathy, R.K. Singh, P. Holloway, S.J. Pearton, D. Palmer and G.E. McGuire, Critical Rev. Solid-State Mat. Sci. 27, 1 (2002).

867. “Enhanced Tunneling in GaN/InGaN MQW Heterojunction Diodes after Short-Term Injection Annealing,” A. Polyakov, N. Smirnov, A. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A. Osinsky and P.E. Norris, J. Appl. Phys. 91, 5203 (2002).

868. “Electrical Characterization of GaN MOS Diodes using Sc2O3 as the Gate Oxide,” R. Mehandru, B.P. Gila, J. Kim, J.W. Johnson, K.P. Lee, B. Luo, A.H…. Onstine, C.R. Abernathy, S.J. Pearton and F. Ren, Electrochem. Solid-State Lett. 5, 651 (2002).

869. “New Applications for GaN,” S.J. Pearton, C.R. Abernathy, M.E. Overberg, G.T. Thaler, A.H. Onstine, B.P. Gila, F. Ren, B. Luo and J. Kim, Materials Today, June 2002, pp. 24-31.

870. “Band Line-up and Mechanisms of Current Flow in n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunctions,” A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E. Kozhukhova, B. Luo, J. Kim, R. Mehandru, F. Ren, K. Lee, S.J. Pearton, A.V. Osinsky and P.E. Norris, Appl. Phys. Lett. 80, 3352 (2001).

871. “Effects of Ni Implantation into Bulk and Epitaxial GaP on Structured and Magnetic Characteristics,” M.E. Overberg, N. Theodoropoulou, S.N.G. Chu, S.J. Pearton, C.R. Abernathy, A.F. Hebard, R.G. Wilson and J.M. Zavada, Mat. Sci. Eng. B94, 14 (2002).

872. “Magnetism in SiC Implanted with High Doses of Fe and Mn,” S.J. Pearton, K.P. Lee, M. Overberg, C.R. Abernathy, N. Theodoropoulou, A.F. Hebard, R.G. Wilson, S.N.G. Chu and J.M. Zavada, J. Electron. Mater. 31, 336 (2002).

873. “Optical Properties of Undoped AlGaN/GaN Superlattices as Affected by Built- in and External Electric Field and by Ar-Implantation-Induced Partial Disordering,” A.Y. Polyakov, N. Smirnov, A. Govorkov, S.J. Pearton, N. Faleev, A. Osinsky, P.E. Norris and R.G. Wilson, J. Electron. Mater. 31, 384 (2002).

874. “Magnetic Effects of Direct Ion Implantation of Mn and Fe into p-GaN,” K.P. Lee, S.J. Pearton, M. Overberg, C.R. Abernathy, N. Theodoropoulou, A.F. Hebard, R.G. Wilson, S.N.G. Chu and J.M. Zavada, J. Electron. Mater. 31, 411 (2002).

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875. “High Energy Proton Irradiation Effects on AlGaN/GaN HEMTs,” B. Luo, J.W. Johnson, F. Ren, K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwivedi, T. Fogarty, R. Wilkins, A. Dabiran, A.M. Wowchack, C.J. Polley, P.P. Chow and A.G. Baca, J. Electron. Mater. 31, 437 (2002).

876. “Characterization of High Dose Mn, Fe and Ni Implantation into p-GaN,” S.J. Pearton, M.E. Overberg, G. Thaler, C.R. Abernathy, N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, R.G. Wilson, J.M. Zavada, A.Y. Polyakov, A.V. Osinsky, P.E. Norris, P.P. Chow, A.M. Wowchack, J.M. Van Hove and Y.D. Park, J. Vac. Sci. Technol. A20, 721 (2002).

877. “Magnetic and Structural Properties of Fe, Ni and Mn-Implanted SiC,” N. Theodoropoulou, A.F. Hebard, S.N.G. Chu, M.E. Overberg, C.R. Abernathy, S.J. Pearton, R.G. Wilson, J.M. Zavada and Y.D. Park, J. Vac. Sci. Technol. A20, 579 (2002).

878. “High Energy Proton Irradiation of MgO/GaN MOS Diodes,” J. Kim, B.P. Gila, R. Mehandru, B. Luo, A.H. Onstine, C.R. Abernathy, F. Ren, K. Allums, R. Dwivedi, T. Fogarty, R. Wilkins, Y. Irokawa and S.J. Pearton, Electrochem. Solid-State Lett. 5, G57 (2002).

879. “Performance of AlGaN/GaN HEMTs at Nanoscale Gate Lengths,” J.W. Johnson, F. Ren, S.J. Pearton, A.G. Baca, J. Han, A.M. Dabiran and P.P. Chow, J. Nanosci. Nanotech. 2, 325 (2002).

AT&T Bell Labs TM's 1. "Annealing of Ion Implanted GaAs," P.K. Chin and S.J. Pearton, Bell Labs TM 52337-

840820-01 (1984). 2. "Spin-on Glass as an Encapsulant for Annealing Si- implanted GaAs," U.K. Chakrabarti

and S.J. Pearton, TM 52336-850109-01 (1985). 3. "Applications of Rapid Thermal Annealing to GaAs IC Processing," P.K. Chin and S.J.

Pearton, TM 52336-850206-05 (1985). 4. "Formation of Shallow p+ Layers in GaAs," S.J. Pearton, U.K. Chakrabarti and K.D.

Cummings, TM 52362-850520-08 (1985). 5. "Application of RTA to AlGaAs/GaAs MODFET Ohmic Contact Formation," W.L.

Jones, S.J. Pearton and C.W. Tu, TM 52363-850703-01 (1985). 6. "Optimized Transient Annealing Furnaces for GaAs," P.K. Chin and S.J. Pearton, TN

52362-850808-16 (1985). 7. "Evaluation of Vertical Gradient Freeze GaAs for IC Applications," S.J. Pearton, K.D.

Cummings, R. Caruso and J. Clemans, TM 52362-850826-18 (1985). 8. "Implant Isolation of GaAs," P.K. Chin, K.T. Short and S.J. Pearton, TM 52363-860731-

02 (1986). 9. "Atomic and Electrically Active Profiles of S in GaAs," D.L. Malm, S.J. Pearton and J.

Kovalchick, TM 52334-860408-13 (1986). 10. "Ultra-thin n Layers in GaAs by Molecular Species Implantation and Rapid Annealing,”

P.K. Chin, K.T. Short and S.J. Pearton, Lab 5236 Bulletin, Aug. (1986). 11. "Extended X-ray Absorption Fine Structure Studies by Soft X-ray Fluorescence

Detection,” F. Sette, S.J. Pearton, J.M. Poate, J.E. Rowe and J. Stroh, TM 11157-860801-15 (1986).

12. "Ion Beam Modification of FET Channel Layers to Achieve Threshold Voltage

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Uniformity," S.J. Pearton and K.T. Short, Lab 5236 Bulletin, Sept. (1986). 13. "Atomic and Electrical Profiles in Shallow-diffused or Implanted Acceptor Layers in

GaAs," U.K. Chakrabarti, S.J. Pearton and K.T. Short, TM 52321-861020-69 1986). 14. "SiO 2 Modification by As of Ga Implantation for GaAs Encapsulation During RTA,"

A.G. Baca and S.J. Pearton, Lab 5236 Bulletin, Nov. (1986). 15. "Rapid Annealing of Selectively Doped AlGaAs-GaAs Heterostructures for Ion

Implantation," N.J. Shah, C.W. Tu and S.J. Pearton, Lab 5236 Bulletin, Oct. (1986). 16. "Correlation of Materials Parameters with Improved Uniformity of Annealed or In-

alloyed GaAs Substrates," C.R. Abernathy, R. Caruso, K.D. Cummings, P. Dobilla, M.L. Gray A.S. Jordan, S.J. Pearton and V. Swaminathan, TM 52363-861120-01 (1986).

17. "Diffusion of Ti into p-type InP," V. Swaminathan, J. Lopata, V. Riggs, U.K. Chakrabarti, S.J. Pearton and W.C. Dautremont-Smith, TM 52321-87036606-13 (1987).

18. "Implant Activation and Isolation in SARGIC-SDHT Structures," S.J. Pearton, R.F. Kopf and C.W. Tu, TM 52363-870409-02 (1987).

19. "Ion Implantation and Annealing of Compound Semiconductors," S.J. Pearton, TM 52363-870626-01 (1987).

20. "AlGaAs HBTs Grown on Si by MOCVD," L.M. Lunardi and S.J. Pearton, TM 52363-8709624-01 (1887).

21. "Device Characterization of Selectively Doped Heterostructure Transistors using Self-aligned Refractory Gate Process with Furnace and Rapid Thermal Anneals," C.S. Wu, P.F. Sciortino, F. Ren, A. Baca, M.P. Ianuzzi, S.J. Pearton, T.C. Henry, N.J. Shah and R.H. Burton, TM 52362-871029-39 (1987).

22. "Comparison of Selectively Doped GaAs-AlGaAs Heterostructures Grown on GaAs or Si by MOCVD," S.J. Pearton, S. Nakahara, S.M. Abys, J. Kovalchick and F. Ren, TM 52363-880613-01TM (1988).

23. "Heterostructure Devices and Circuits," S.S. Pei, N.J. Shah and S.J. Pearton, TM 52363-880613-01TM (1988).

24. "Material and Device Properties of 3" Diameter GaAs-on-Si with Buried p-type Layers," S.J. Pearton, K.M. Lee, F. Ren, V.J. Scarpelli and N.H. Haegel, TM 52363-880608-01 (1988).

25. "Enhanced Protection of InP During High Temperature Processing Using Sn-coated InP," U.K. Chakrabarti, V. Swaminathan, J.L. Zilko, P.K. Gallagher, H. Basty and S.J. Pearton, TM 52321-881108-67 (1988).

26. "In-situ Plasma-Surface Monitoring Using Photoemission Optogalvanic Second Harmonic and Photoluminescence Spectroscopies,” A. Mitchell, R.A. Gottscho, S.J. Pearton, G.R. Scheller and S.W. Downey, TM 11546--890612-13 (1989).

27. "Quasi-Planar Implant-Isolated Long Wavelength Quantum Well Infra-Red Photodetectors," S.S. Pei, A. Zussman, S. Hui, M. Asom, S.J. Pearton and B.F. Levine, TM 11151-910710-44 (1992).

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Professional Society Membership 1. American Physical Society (Life Member) 2. Materials Research Society 3. American Vacuum Society (Fellow) 4. IEEE (Fellow) 5. Electrochemical Society (Fellow) 6. TMS Invited Presentations at Universities or Institutions 1. "Defect Phenomena in Semiconductors," Physics Dept., University of Tasmania, Sept.

16, 1981. 2. "The Role of Hydrogen in Defect Passivation in Semiconductors," Lawrence Berkeley

Laboratory, U.C.-Berkeley, January 18, 1983. 3. "Defects in Si-Recent Results," Dept. of Materials Science, U.C.-Berkeley, June 9, 1983. 4. "Hydrogen Passivation of Deep Levels in Semiconductors," Physics Dept., SUNY-

Albany, July 13, 1983. 5. "Radiation Damage in Ge," Lawrence Berkeley Laboratory, U.C.-Berkeley, November

22, 1983. 6. "Ion Implantation in GaAs - A Comparison with Si," Bell Labs, Murray Hills, January

1986. 7. "Ion Implantation of III-V Materials," Lecture in Physics and Technology and Compound

Semiconductors course, June 16, 1987, Bell Labs. 8 "Heteroepitaxial Growth of GaAs-on-Si," University of Florida, November 3, 1987. 9. "GaAs-on-Si," Wright Patterson AFB, May 12, 1988. 10. "Rapid Thermal Annealing of III-V Materials," New England Vac. Society, Boston,

January 1989. 11. "Technology of GaAs-on-Si," Royal Melbourne Institute of Technology, September

1988. 12. "Plasma Etching," Michigan State University, January 1992. 13. "Hydrogen in Si-MEMC, " St. Louis, July 1993. 14. “Nanostructures in Semiconductors,” Ohio State University, January 1995. 15. “Dry Etching of Compound Semiconductors,” Michigan State University, July 1995. 16. “Nanostructure Materials,” Ohio State University, April 1996. 17. “Dry Etching of MRAMs,” Honeywell, June 1998. Miscellaneous 1. Session chairman (Hydrogen in Si) at 13th Intl. Conf. on Defects in Semiconductors, San

Diego, CA (1984). 2. Refereed papers for Journal of Electronic Materials, Journal of Electrochemical Society,

Solid State Electronics, Applied Physics Letters, Journal of Applied Physics, Proceedings of the Materials Research Socie ty, IEEE Electron Device Letters, Physical Review Letters., Nucl. Instruments and Methods, IEEE Transactions on Nuclear Science, Phys. Rev. B., IEEE Trans. Electron Dev., J. Vac. Sci. Technol, J. Phys. Chem. Solids, J. Non-

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Crystalline Solids. 3. Session chairman at Gordon Research Conference on point defects in semiconductors,

July 1985. 4. Co-chairman of symposium on Oxygen, Carbon, Hydrogen and Nitrogen in Si, Fall

Meeting of Materials Research Society 1985; Editor of MRS Vol. 59 (1986). 5. Session Chairman at ECS Fall Meeting, San Diego, CA, October 1986. 6. Session chairman, MRS Spring Meeting, Anaheim, CA, April 1987. 7. Co-chairman of Symposium on Defects in Electronic Materials, Fall Meeting of the

Materials Research Society 1987: Editor of MRS Vol. 104 (1988). 8. Co-chairman of Symposium on RTP of Electron Materials and Devices, ECS Meeting,

Atlanta, GA, May 1988. 9. Session Chairman, MRS Fall Meeting, Boston, MA, November 1987. 10. Session Chairman, MRS Spring Meeting, Reno, NV, April 1988. 11. Session Chairman, MRS Fall Meeting, Boston, MA, November 1988. 12. Session Chairman, MRS Spring Meeting, San Diego, CA, April 1989. 13. Co-organizer of symposium on Ion Implantation in Elemental and Compound

Semiconductors, ECS meeting, Florida, October 1989; Editor of ECS Vol. 90-13 (1990). 14. Co-organizer of symposium on Degradation Mechanisms in III-V Compound

Semiconductor Devices and Structures, 1990 Spring MRS Meeting, San Francisco, CA, April 1990; Editor of MRS Vol. 184 (1990).

15. Member program committee, 4th Intl. Conf. on Shallow Impurities in Semiconductors, London, June 1990.

16. Member Organizing Committee, 16th Intl. Conf. on Defects in Semiconductors, Lehigh, July 1991.

17. Member Organizing Committee, 1992 AVS Meeting, Chicago, November 1992. 18. Co-organizer, Symp. on Adv. III-V Compound Semiconductor Growth, Processing &

Devices, MRS Fall 1991, Boston, December 1991; Editor of MRS Vol. 240 (1992). 19. Co-organizer, Symp. III-V Electronic & Photonic Device Fabrication and Performance,

MRS Spring 1993, San Francisco, April 1993; Editor of MRS Vol. 300 (1993). 20. Organizing Committee, 1993 Electronic Materials Conference, Santa Barbara, CA, June

1993. 21. Scientific Committee, 2nd Intl. Workshop on Expert Evaluation and Control of

Compound Semiconductor Materials and Technologies, Parma, Italy, May 1994. 22. Associate Editor - Journal of Vacuum Science and Technology B, 1993-1995; Editorial

Board - Materials Science & Engineering Reports, and Diffusion and Defect Data, 1994-present, Associate Editor, Journal Vacuum Science and Technol. A, 2000-2002.

23. Editor, Solid State Electronics, 1994-present. 24. Co-organizer, Symp. on Compound Semiconductor Electronics & Photonics, MRS

Spring 1996, San Francisco, April 1996. 25. Co-organizer, III-V Nitrides, ECS Meeting, Los Angeles, CA, May 1996. 26. Co-organizer, Wide Bandgap Nitrides, ECS Meeting, Chicago, IL, October 1995. 27. Co-organizer, Symp. on SOTAPOCS, ECS Meeting, Los Angeles, CA, May 1996. 28. Co-organizer, High Speed III-V Electronics for Wireless Applic., ECS Meeting, San

Antonio, October 1996. 29. Scientific Committee, IEEE Caracas Symp. on Electronics, Venezuela, December 1995. 30. “GaN and Related materials for Device Applications,” ed. S.J. Pearton, C.P. Kuo, special

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issue of MRS Bulletin, February ’97, Vol. 22(2), pp.17-57. 31. Intl. Committee, 2nd IEEE Intl. Conf. Devices, Circuits and Systems, Caracas, March

1998. 32. Co-organizer, Power Semicond. Mat. & Device Symp., MRS, Boston, December 1997. 33. Co-organizer, GaN Symp., ECS, Paris, September 1997. 34. Program Committee, 17th IUVSTA Workshop, Hawaii, August 1997. 35. Program Committee, International Semiconductor Device Research Symp,

Charlottesville, VA, December 1997. 36. Co-organizer, GaN and Related Alloys Symposium, MRS Boston, Dec. 1998. 37. Co-organizer, Light-Emitting Devices for Optoelectronic Applications, 193rd ECS

Meeting, San Diego, May 1998. 38. Co-organizer, III-V Nitride Materials and Processes, 194th ECS Meeting, Boston, Nov.

1998. 39. Co-organizer, Compound Semiconductor Power Transistors, 194th ECS Meeting, Boston,

Nov. 1998. 40. Co-organizer, Compound Semiconductor Surface Passivation and Novel Device

Processing, MRS Spring Meeting, San Francisco, April 1999. 41. Co-organizer, Session of Novel Dielectric-Semiconductor Systems, APS March meeting,

Atlanta, Georgia, March 1999. 42. Program Committee, 4th Int. EXAMTEC Workshop, Cardiff, Wales, June 1998. 43. Program Committee, InP and Related Materials, Williamsburg, May 2000. 44. Program Committee, Photonics Taiwan, Taipei July 2000. 45. Advisory Board, “Advances in Nanoscale Materials and Technologies,” (Academic

Press, 2001). 46. Program Committee, 9th International Conf. Defects: Recognition, Imaging and Physics

in Semicond., Rimini, Italy, Sept. 2001. 47. Program Committee, International Conference on Nitride Semiconductors, Denver, CO,

July 16-20, 2001. 48. Co-organizer, III-Nitride-Based Semiconductor Electronics and Optical Devices, 199th

Meeting of ECS, Washington, DC, March 2001. 49. Co-organizer, Wide Bandgap Semiconductors for Photonic and Electronic Devices and

Sensors, 201st Meeting of ECS, Philadelphia, May 2002. Patents 1. "Quantum Well Wire Structures," J. Cibert, A.C. Gossard, S.J. Pearton and P.M. Petroff,

Issued June 14, 1988, U.S. Patent 4,751 194. 2. "Fabrication of Semiconductor Devices without Breaking Vacuum," A. Katz and S.J.

Pearton, Patent Submission 104991 (1992). 3. "Method for Reducing Sidewall Roughness During Dry Etching," C. Abernathy, J.

Lothian, S.J. Pearton and F. Ren, Patent Submission 105336 (1992). 4. "GaAs Device Fabrication Utilizing MOMBE" Abernathy, Hobson, Jordan, Pearton and

Ren, (Feb. 1991), US Patent 5171704. 5. "Self-aligned Dry Etch Process for In-based HBTs," Fullowan, Pearton and Ren, Issued

December 1, 1992: U.S. Patent 5, 168 071.

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6. "Method for Forming Patterned W Layers," Fullowan, Pearton and Ren, Issued January 5, 1993: U.S. Patent 5,176 792; European Patent 92309607.

7. "Method for Selectively Growing Ga-containing Layers," Abernathy, Pearton, Ren and Wisk, Issued July 13, 1993: U.S. Patent 5,227 006; European Patent 92310488.

8. "Method for Making Fine-line Semiconductor Devices," Abernathy, Lothian, Pearton and Ren, European Patent 94301125 (April 20, 1994).

9. "Method for Selectively Growing Al-containing Layers," Abernathy, Pearton, Ren and Wisk: European Patent 92310487 (1993): U.S. Patent 5,459 097.

10. "Fabrication of Al-containing Semiconductor Devices," Abernathy, Hobson, Jordan, Pearton and Ren: European Patent 92301438 (1992).

Books 1. Hydrogen in Crystalline Semiconductors, S.J. Pearton, J.W. Corbett and M. Stavola,

(Springer-Verlag, 1991). 2. Hydrogen in Compound Semiconductors, S.J. Pearton, ed. (Trans-Tech. Publications,

Switzerland, 1993). 3. InP HBTs - Growth, Processing and Applications, B. Jalali and S.J. Pearton (Artech

House, Boston, 1994). 4. Topics in Growth and Device Processing of III-V Semiconductors, S.J. Pearton, C.R.

Abernathy and F. Ren (World Scientific, New York, 1996). 5. GaN and Related Materials, S.J. Pearton, ed. (Gordon and Breach, New York 1997)

ISBN 90-5699-516-2. 6. Processing Technology for Semiconductors, ed. S.J. Pearton (Res. Signpost, India 1997). 7. Processing of Wide Bandgap Semiconductors, ed. S.J. Pearton (Noyes, NJ 2000). 8. GaN and Related Materials Vol. II, S.J. Pearton, ed. (Gordon and Breach, NY 1999). 9. Handbook of Advanced Plasma Processing Techniques, ed. R.J. Shul and S.J. Pearton

(Springer, Berlin, 2000). 10. The Blue Laser Diode, S. Nakamura, S.J. Pearton and G. Fasol (Springer, Berlin 2000). Book Chapters 1. "Vibrational Spectroscopy of H-related Defects in Si," in Hydrogen in Semiconductors,

M. Stavola and S.J. Pearton, ed. Pankove and Johnson (Academic Press, New York, 1990).

2. "Neutralization of Deep Levels in Si," in Hydrogen in Semiconductors, S.J. Pearton, ed. Pankove and Johnson (Academic Press, New York, 1990).

3. "Hydrogen Passivation of Damage Centers in Semiconductors, in Hydrogen in Semiconductors, J.W. Corbett, P. Deak, V. Desnica and S.J. Pearton, ed. Pankove and Johnson (Academic Press, New York, 1990).

4. "Heterostructure FETs," in High Speed Devices, S.J. Pearton and N. Shah, ed. S.M. Sze (Wiley, New York, 1990).

5. "Ion Beam Processing of InP and Related Materials," in InP-Growth, Processing and Devices, S.J. Pearton and U.K. Chakrabarti, ed. A. Katz (Artech House, 1991).

6. "Wet and Dry Etching of Compound Semiconductors," in Modern Compound Semiconductor Technology & Devices, S.J. Pearton, ed. P.H. Holloway and G.E.

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McGuire (Noyes, 1992). 7. "Hydrogenation of III-V Semiconductors During Processing," in Hydrogen in Compound

Semiconductors, S.J. Pearton, ed. S.J. Pearton (Trans-Tech Pub., Switzerland, 1993). 8. “Hydrogen in III-V Compound Semiconductors,” in Hydrogen in Compound

Semiconductors, S.J. Pearton, ed. S.J. Pearton (Trans-Tech Pub., Switzerland, 1993). 9. "Self-aligned Processing of InP HBTs," in InP HBTs: Growth, Processing and

Performance, S.J. Pearton, ed. B. Jalali and S.J. Pearton (Artech House, Boston, 1994). 10. "Radiation Effects on InP-based HBTs," in InP HBTs: Growth, Processing and

Performance, S. Witmer, S. Mittleman and S.J. Pearton, ed. B. Jalali and S.J. Pearton (Artech House, Boston, 1994).

11. "Hydrogen in GaN," in GaN and Related Materials, S.J. Pearton (Gordon and Breach, New York, 1996).

12. “Etching of III-Nitrides,” S.J. Pearton and R.J. Shul, in Semiconductors and Semimetals, Vol. 50, ed. J. Pankove and T.D. Moustakas (Academic Press, NY 1997).

13. “The Properties of Hydrogen in GaN and Related Alloys,” S.J. Pearton, in Hydrogen in Materials, ed. N.H. Nickel (Academic Press, NY 1998).

14. “Dry Etch Damage in Wide Bandgap Semiconductor Materials,” S.J. Pearton and R.J. Shul, in Defects in Optoelectronics, ed. S.W. Pang and O. Wada (Gordon and Breach, NY 1999).

15. “Processing of GaN and Related Compounds,” S.J. Pearton, in Processing Technology for Semiconductors (Res. Signpost, India 1997).

16. “Hydrogen in Wide Bandgap Semiconductors,” S.J. Pearton, in Processing of Wide Bandgap Semiconductors (Noyes, NJ 1998).

17. “Processing of Compound Semiconductors,” S.J. Pearton, in Handbook of Advanced Electronic and Photonic Materials, ed. H.S. Nalwa (Academic Press, NY 2000).

18. “Dry Etching of Magnetic Materials,” K.B. Jung, H. Cho and S.J. Pearton in Advanced Plasma Processing Techniques, ed. R.J. Shul (Springer, Berlin 1999).

19. “Hydrogen in Wide Bandgap Materials,” S.J. Pearton and J.W. Lee in Handbook of Advanced Electronic and Photonic Materials, ed. H.S. Nalwa (Academic Press, NY 2000).

20. “Plasma Etching of GaN and Related Materials,” S.J. Pearton and R.J. Shul, in Thin Films Handbook, ed. H.S. Nalwa (Academic Press, NY 2001).

21. “Ion Implant Doping and Isolation of GaN and Related Materials,” S.J. Pearton, in Thin Films Handbook, ed. H.S. Nalwa (Academic Press, NY 2001).

22. “Wet and Dry Etching of SiC,” S.J. Pearton, in Process Technology for SiC Devices, ed. C.M. Zetterling (IEE, London 2001).

23. “GaN Device Processing,” S.J. Pearton, in GaN and Related Materials II (Gordon and Breach, NY 1999).

24. “Introduction of Processing and Properties of Compound Semiconductors,” S.J. Pearton, in Semiconductors and Semimetals, Vol. 73, ed. R.K. Willardson and H.S. Nalwa (Academic Press, NY 2001).

25. “GaN and AlGaN High Voltage Power Rectifiers,” A. Zhang, F. Ren, J. Han, S.J. Pearton, S. Reuh, Y.J. Park and J.-I. Chyi, in GaN Electronics, ed. F. Ren and J.C. Zolper (World Scientific, Singapore, 2002).

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Proceedings 1. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Si, ed. T. Mikkleson, S.J.

Pearton, J.W. Corbett and S.J. Pennycook, Mat. Res. Soc. Symp. Proc., Vol. 59 (1986). 2. Defects in Electronic Materials, ed. M. Stavola, S.J. Pearton and G. Davies, Mat. Res.

Soc. Symp. Proc., Vol. 104 (1987). 3. Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures, ed.

V. Swaminathan, S.J. Pearton and M.O. Mansoch, Mat. Res. Soc. Symp. Proc., Vol. 184 (1990).

4. Advanced III-V Compound Semiconductor Growth, Processing and Device, ed. S.J. Pearton, D.K. Sadana and J.M. Zavada, Mat. Res. Soc. Symp. Proc., Vol. 240 (1991).

5. III-V Electronic and Photonic Device Fabrication and Performance, ed. K.S. Jones, S.J. Pearton and H. Kanba, Mat. Res. Soc. Symp. Proc., Vol. 300 (1993).

6. Compound Semiconductor Electronics and Photonics, ed. R.J. Shul, S.J. Pearton, F. Ren and C.S. Wu, Mat. Res. Soc. Symp. Proc., Vol. 421 (1996).

7. Power Semiconductor Materials and Devices, ed. S.J. Pearton, R.J. Shul, E. Wolfgang, F. Ren and S. Tenconi, Mat. Res. Soc. Symp. Proc., Vol. 483 (1997).

8. Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, ed. S.J. Pearton, K.S. Jones and V.T. Kapor (Electrochem. Soc., Pennington, NJ 1990), Vol. 90-13.

9. Wide Bandgap Semiconductors and 23rd State-of-the-Art Program on Compound Semiconductors, ed. F. Ren, S.J. Pearton, G.C. Chi, D.N. Buckley, P. van Duele and T. Kamijoh (Electrochem. Soc., Pennington, NJ 1995), Vol. 95-21.

10. Proc. 24th State –of-the-Art Program on Semiconductors, ed. F. Ren, S.J. Pearton, S. Chu, R. Shul and T. Kamijoh, (Electrochem. Soc., Pennington, NJ 1996), Vol. 96-2.

11. III-V Nitride Materials and Processes, T. Moustakas, J. Dismukes and S.J. Pearton, (Electrochem. Soc., Pennington, NJ 1996), Vol. 96-11.

12. High Speed III-V Electronics, ed. F. Ren, C.S. Wu, S. Chu and S.J. Pearton, (Electrochem. Soc., Pennington, NJ 1996), Vol. 96-15.

13. Low Energy Beam Processes in Electronic Materials, ed. R. Singh, D. Kumar, S.J. Pearton and R. Clarke, 126th TMS Nat. Meeting, Orlando, FL; Special Issue of J. Electron Mater. 26 (1997).

14. III-V Nitride Materials and Processes II, ed. C.R. Abernathy, W.D. Brown, D.N. Buckley, J.P. Dismukes, M. Kamp, T.D. Moustakas, S.J. Pearton and F. Ren, (Electrochem. Soc., Pennington, NJ 1998), Vol. 97-34.

15. Compound Semiconductor Power Transistors and State-of-the-Art Program on Compound Semiconductors, ed. F. Ren, D. Buckley, SA. Chu, J.C. Zolper, C.R. Abernathy, S.J. Pearton and J. Pursey (Electrochem. Soc., Pennington, NJ 1998), Vol. 98-12.

16. Light-Emitting Devices for Optoelectronic Applications and 28th SOTAPOCS Program, ed. H. Hou, R. Sah, S.J. Pearton, F. Ren and K. Wada (Electrochem. Soc., Pennington, NJ 1998), Vol. 98-2.

17. GaN and Related Alloys, ed. S.J. Pearton, C.P. Kuo, T. Uenoyama and A.F. Wright, Mat. Res. Soc. Symp. Proc. 537 (1999).

18. Compound Semiconductor Surface Passivation and Novel Device Processing, ed. H. Hasegawa, M. Hong, Z. Lu and S.J. Pearton, Mat. Res. Soc. Symp. Proc. 573 (1999).

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19. III-Nitride-Based Semiconductor Electronics and Optical Devices, ed. F. Ren, D.N. Buckley, S.N.G. Chu and S.J. Pearton, ECS Proc. 2001-1 (ECS, Pennington, NJ 2001).

20. Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II, ed. R. Kopf, F. Ren, E. Stokes, H. Ng, A.G. Baca, S.J. Pearton and S.N.G. Chu, ECS Proc. 2002-1 (ECS, Pennington, NJ, 2002).

107

REFERENCES 1. Professor M. Stavola

Chairman, Department of Physics Lehigh University Bethlehem, Pennsylvania 18015 U.S.A. Phone: (610) 758-3946 Fax: (610) 758-9730 Email: mjsa@lehigh.edu

2. Dr. R.J. Shul

Sandia National Laboratories P.O. Box 5800 Dept. 1313, MS 0603 Albuquerque, New Mexico 87185 U.S.A. Phone: (505) 844-6126 Fax: (505) 844-8985 Email: rjshul@sandia.gov

3. Dr. J.M. Poate

Dean, College of Science & Liberal Arts NJIT University Heights Newark, New Jersey 07102-1982 U.S.A. Phone: (201) 596-3676 Fax: (201) 565-0586