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    cur mir 2

    PROBLEM DESCRIPTION

    Design a cascode current mirror with the following requirements: (a) Transistor at the output stage must operate in the active

    region for values of output voltage to within 0.2 V of ground, (b) the output current must be 50 A, and (c) the output currentchange less than 0.02 % for a 1 V change in the output voltage.

    SOLUTION

    Theory

    The real current mirror suffers from various non-idealities. For example, The gain of current mirror is never independent of

    the input frequency. The following are few of low frequency factors causing non-idealities.

    The output current change with change in the voltage a the output terminal. This effect is represented by the small-signal

    output resistance of current mirror. It is given that the output current changes up to 0.02% for a 1 V change in the output

    voltage. So, the small signal output resistance, Ro = VoIo

    = 10.0002 Io . This output resistance affects the performance ofmany circuits that use current mirror. Higher the output resistance of a current mirror, lower is the dependence of the

    output current on the output voltage. Therefore, high output resistance is desirable.

    The difference between input current and output current of current mirror is the gain error. There are two parts of gain

    error (a) systematic gain error, and (b) random gain error. The systematic gain error arises even when all matched elements

    are matched. The random gain error is caused by the unintended mismatches between matched elements.

    When input current source is connected to the input terminal of a current mirror, it creates a voltage drop VIN. Thisvoltage drop reduces the voltage available across the input current source. To reduce VIN, current mirrors sometimes havemore than one input terminal. Cascode current mirror have high output resistance and some provisions are incorporated

    to make it high-swing cascode current mirror.

    There is minimum output voltage VOU T(min) that allows the output devices to operate in the active region. Aim is tominimizes VOU T(min) to have wider range of output voltages for which the current-mirror output resistance is constant.

    Therefore, minimum systematic gain error (), higher output resistance (Ro), minimum input voltage drop across the inputdevices (VIN) and minimizing minimum output voltage (VOU T(min)) are the important factors to be considered while designinga current mirror.

    In practice, all transistors except M4 are identical and(W/L)4 < 14(W/L)is selected for two main reasons. First, the output

    transistorM1 should operate slightly above Vov1 by a few hundreds of millivolts to realize high incremental output resistance.Second, body effect reduces the drain-source voltage on M1.

    VDS1 = VGS3+ VGS4 VGS2 VGS5Since source body voltage ofM5 is higher than that ofM4, Vt5 > Vt4. Similarly, source-body voltage ofM2 is higher thanthat ofM3, Vt2 > Vt3.

    Advantages of MOS Cascode Current Mirror

    Cascode configuration achieves a very high output resistance. Therefore, the use of cascodes for high performance current

    mirrors is natural. The small-signal output resistance of a cascode current mirror is given by the following expression

    Ro= ro1+ ro2[1 + (gm+ gmb)ro1]

    wherero1 andro2 are the output resistance of MOS transistors in the output stage. Bipolar cascode current mirror cannot realize an output resistance larger than 0ro/2 because 0 is finite and nonzero

    small-signal base current flows in the cascode transistor. In contrast, the MOS cascode is capable of realizing arbitrarily

    high output resistance by increasing the number of stacked cascode devices because 0

    for MOS transistors.

    However, the MOS substrate leakage current can create a resistive shunt to ground from the output node, which can

    dominate the output resistance for VOU T > VOU T(min).

    Computations

    The output voltage 0.2 V when both transistorsM1 andM2 operate in active (saturation) region. Therefore Vov1 = Vov2 =0.1V

    NMOS device paramter,

    kn= nCox= n 3.9 8.864 1014 Fcm 1tox = 450 3.9 8.864 1014 180108 = 194.5A/V2

    The output current,

    IOU T = 50 106 = 194.5106

    2 (W/Leff)(VGS2 VT)2

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    Fig. 1: MOS Cascode Current Mirror

    Fig. 2: MOS Cascode Current Mirror with (W/L)4 < 14(W/L)

    ForVov = VGS2 VT = 0.1VSo, (W/Leff) = 51.4and

    gm=

    2kn(W/Lef f)ID =

    2 194.5 106 51.4 50 106 = 103 1 The out resistance of the cascode current mirror is given by the following expression,

    Ro= ro1+ ro2[1 + gm2ro1] =ro2 gm2 ro1 Now,

    ro1 = VA

    ID= 1ID =

    1

    ID(dXd/dVDS

    Leff)

    = Leff

    501060.02106 =Leff 1012 Given that,

    Ro= VoID

    = 10.02%ID = 1

    0.000250106 = 100M

    100 106 =Leff 1012 Lef f 1012 103Leff = 0.316mLdrawn = 0.316 + 2 0.09 = 0.5mW = 51.4 0.5 = 16.27m

    NMOS device paramter,

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    Fig. 3: Simulation MOS Cascode Current Mirror

    kn= nCox= n 3.9 8.864 1014 Fcm 1tox

    = 450 3.9 8.864 1014 180108 = 194.5A/V2

    = dXd/dVDSLeff = 0.02/0.316 = 0.0633

    DESIGN OUTCOME

    TABLE I: Circuit Components

    No. Component Value

    1 Ldrawn 0.5m2 W 16.27m3 IIN 51.85mA

    ASSUMPTIONS

    1) All transistors are identical.

    2) Input current is adjusted to 51.85A to get output current of50 A.3) Device parameter

    Xd= 0 dXd/dVDS= 0.02m/V Ld= 0.09m

    Contact: [email protected]

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