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www.epc-co.com EPC - The Leader in eGaN® FETs IWWPE 2014 1
The eGaN® FET Journey Continues
Alex Lidow Efficient Power Conversion Corporation
Crushing Silicon With GaN
www.epc-co.com EPC - The Leader in eGaN® FETs IWWPE 2014 2
Agenda
• What have we learned? • Wireless Power • Envelope Tracking • Summary
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eGaN FET
Package Impact on Efficiency
SO-8 LFPAK DirectFET LGA
65
70
75
80
85
90
0.5 1 1.5 2 2.5 3 3.5
Effic
ienc
y (%
)
Switching Frequency (MHz)
SO-8 LFPAK DirectFET LGA
0
0.5
1
1.5
2
2.5
SO-8 LFPAK DirectFET LGA
Pow
er L
oss
(W)
Device Loss Breakdown Package Die
18%
82%
0
0.5
1
1.5
2
2.5
SO-8 LFPAK DirectFET LGA
Pow
er L
oss
(W)
Device Loss Breakdown Package Die
18%
82%
27%
73%
0
0.5
1
1.5
2
2.5
SO-8 LFPAK DirectFET LGA
Pow
er L
oss
(W)
Device Loss Breakdown Package Die
18%
82%
27%
73%
53% 47%
0
0.5
1
1.5
2
2.5
SO-8 LFPAK DirectFET LGA
Pow
er L
oss
(W)
Device Loss Breakdown Package Die
18%
82%
27%
73%
53% 47%
82% 18%
VIN =12V VOUT =1.2V IOUT =20A fsw =1MHz
Drain
Source
Gate
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83
84
85
86
87
88
89
90
91
2 4 6 8 10 12 14 16 18 20 22 24
Effic
ienc
y (%
)
Output Current (A)
LLoop≈2.9nH
40V MOSFET
83
84
85
86
87
88
89
90
91
2 4 6 8 10 12 14 16 18 20 22 24
Effic
ienc
y (%
)
Output Current (A)
LLoop≈1.6nH
LLoop≈2.9nH
40V MOSFET
83
84
85
86
87
88
89
90
91
2 4 6 8 10 12 14 16 18 20 22 24
Effic
ienc
y (%
)
Output Current (A)
LLoop≈1.0nH
LLoop≈1.6nH
LLoop≈2.9nH
40V MOSFET
83
84
85
86
87
88
89
90
91
2 4 6 8 10 12 14 16 18 20 22 24
Effic
ienc
y (%
)
Output Current (A)
LLoop≈1.0nH
LLoop≈1.6nH
LLoop≈0.4nH
LLoop≈2.9nH
40V MOSFET
4
Layout Impact on Efficiency
VIN=12 V, VOUT=1.2 V, fsw=1 MHz, L=150 nH
Prototype LLOOP≈0.4 nH
3x3mm LFPAK LLoop≈3nH
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LLoop≈1.0 nH
5
LLoop ≈ 0.4 nH
Layout Impact on Peak Voltage
VIN=12 V VOUT=1.2 V IOUT=20 A fsw=1 MHz L=150 nH
Switching Node Voltage
70% Overshoot 30% Overshoot
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1 MHz EPC9002 4 MHz EPC9006
EPC2001
EPC2001
EPC2007
EPC2007
Die Size Impact on Efficiency
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Crushing Silicon Generation 3 eGaN FETs
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Generation 3 eGaN® FETs
Up to a 2 X FOM Improvement!
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Gen 3 eGaN FETs are FAST!
EPC8007 driven by LM5113 EPC8002
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* Preliminary Data – Subject to Change without Notice
BV (V)
Max. RDS(ON)
Min. Typical Charge (pC)
Typical Capacitance (pF)
(mΩ) Peak Id (A) (VDS = 20 V; VGS =
0 V)
EPC Part No. (VGS = 5V, (Pulsed, 25 oC,
QG QGD QGS QOSS QRR
ID = 0.5 A) Tpulse = 300 µs) CISS COSS CRSS
EPC8004 40 125 7.5 358 31 110 493 0 45 17 0.4
EPC8007 40 160 6 302 25 97 406 0 39 14 0.3
EPC8008 40 325 2.9 177 12 67 211 0 25 8 0.2
EPC8009 65 138 7.5 380 36 116 769 0 47 17 0.4
EPC8005 65 275 3.8 218 18 77 414 0 29 9.7 0.2
EPC8002 65 530 2 141 9.4 59 244 0 21 5.9 0.1
EPC8003 100 300 5 315 34 110 1100 0 38 18 0.2
EPC8010 100 160 7.5 354 32 109 1509 0 47 18 0.2
Ultra High Frequency eGaN® FETs
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Wireless Power
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Why Wireless Power?
• eGaN FETs enable higher efficiency and operation at safer frequencies
• The global wireless charging market is estimated to grow to $10B by 2018, a CAGR of 42.6%
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Wireless Power
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66 68 70 72 74 76 78 80 82 84
0 6 12 18 24 30 36
Efficiency [%]
Output Power [W]
6.78 MHz, 23.6 Ω Load, eGaN FET
ZVS-CD SE-CE CM-CD VM-CD
EPC 2012
EPC 2012
EPC 2007
EPC 2014
Efficiency
eGaN FETs enable the highest efficiency in all topologies using 6.78 MHz and 13.56 MHz frequencies.
www.epc-co.com EPC - The Leader in eGaN® FETs IWWPE 2014 15
ZVS Class D
0
200
400
600
800
8 14 20 26 32 38 44 50
Per FET Power loss [mW]
DC Load Resistance [Ω]
ZVS-CD
SE-CE
CM-CD
VM-CD
ZVS class D has higher efficiency and a broader operating range than class E.
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Envelope Tracking
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Envelope Tracking
• Envelope Tracking can double base station efficiency.
W/O ET With ET
Red represents wasted energy dissipated as heat
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Linear-Assisted Buck ET
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70%
75%
80%
85%
90%
95%
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Effic
ienc
y
Output current (A)
VIN=42 V VOUT=20 V
10 MHz
EPC8005 65 V 230 mΩ
Efficiency
5 MHz
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A Look into the Future
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Silicon vs. eGaN FET Costs
Starting Material Epi Growth Wafer Fab Test Assembly
OVERALL
2013 2016 lower lower
higher lower same lower
lower same lower
~same?
lower! higher
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Mass Production 40 V - 200 V ~500 MHz
Higher Voltage 600 V
EPC Into the Future
Next Generation Devices 2 x FOM Improvement
More functions on a chip Monolithic half bridge Driver on power chip
Ultra High Frequency Family 1 - 3 GHz
Launched Sept 2013
Higher Current 45 A
www.epc-co.com EPC - The Leader in eGaN® FETs IWWPE 2014 23
Summary • Circuit layout is critical to get the most out of the
efficiency improvements from GaN technology. • Smaller Gen 3 eGaN FETs have been optimized for
wireless power and envelope tracking systems and enable significant performance improvements over Gen 2.
• Efficient power conversion can now be done at frequencies well above 10 MHz.
• Even at lower frequencies you can always improve efficiency with eGaN FETs!
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The end of the road for silicon…..
is the beginning of
the eGaN FET journey!
