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Conclusion

• With increasing injection currents, the band-filling effect and the heating effect on localized energy states are taken into account to explain the disappearance of the temperature-dependent S-shaped peak position and W-shaped FWHM

• Moreover, the EL external quantum efficiency of the InGaN/GaN MQWs is also evaluated. It is observed that the EL efficiency is strongly dependent on temperature and injection current.

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Reference

• Journal of Crystal Growth 310 (2008) 5143–5146