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7/25/2019 Cmos Inverter Characterization
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CIRCUIT CHARACTERIZATION
AND PERFORMANCE
ESTIMATION CONTD
Prof. N.S.Murthy,
PPKKP/UNIMAP
02/09/1 1!M"2#1$NSM$09
mailto:[email protected]:[email protected]7/25/2019 Cmos Inverter Characterization
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"he %M&S In'erter( A )ir*t
+an-e
Vin Vout
CL
VDD
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%M&S In'erter
Polysilicon
In Out
VDD
GND
PMOS2
Metal 1
NMOS
OutIn
VDD
PMOS
NMOS
Contacts
N Well
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"o In'erter*
Connect in Metal
Share power and ground
Abut cells
VDD
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%M&S In'erter
)ir*t&rder % Anay*i*
VOL= 0
VOH= VDDVM= f(Rn, Rp)
VDD VDD
Vin 5 VDD Vin 5 0
VoutVout
Rn
Rp
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%M&S In'erter oad %hara-teri*ti-*
IDn
Vout
Vin= 2.5
Vin
= 2
Vin
= 1.5
Vin
= 0
Vin
= 0.5
Vin
= 1
NMOS
Vin
= 0
Vin
= 0.5
Vin
= 1Vin= 1.5
Vin= 2
Vin
= 2.5
Vin= 1V
in= 1.5
PMOS
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%M&S In'erter "%
Vout
Vin0 . 5 1 1 . 5 2 2 . 5
0.
5
1
1.
5
2
2.
5
NMOS res
PMOS off
NMOS sat
PMOS sat
NMOS off
PMOS res
NMOS sat
PMOS res
NMOS res
PMOS sat
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eterminin3 I4and I
VOH
VOLVin
Vout
VM
VIL VIH
A simplifed approach
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+ain a* a fun-tion of
0 0.05 0.1 0.15 0.20
0.05
0.1
0.15
0.2
Vin(V)
Vout
(V)
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vi(V)
Vout(V)
Gain=-1
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Simuated "%
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vin(V)
Vout(V
)
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Impa-t of Pro-e** ariation*
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vin(V)
Vout(V
)
Good PMOSBad NMOS
Good NMOSBad PMOS
Nominal
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Propa3ation
eay
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%M&S In'erter Propa3ation eay
VDD
Vout
Vin= VDD
Ron
CL
tpHL= f(Ron.CL
= !."# RonCL
t
out
5on%
1
0.#
n60.#7
0.8
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%M&S In'erter*
Polysilicon
InOut
Met$l%
VDD
GND
PMOS
NMOS
%.2&=2
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0 0.5 1 1.5 2 2.5
-10
-0.5
0
0.5
1
1.5
2
2.5
3
t (sec)
Vout(V)
"ran*ient 5e*pon*e
tp= 0.69 CL
(Reqn+Reqp)/2
?
tpL tpL
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e*i3n for Performan-e
Keep -apa-itan-e* *ma
In-rea*e tran*i*tor *i:e*
;at-h out for *efoadin30.2#m
A**ume that for WP> 2WN =2W
*ame puup and pudon -urrent*
appro?. eua re*i*tan-e* RN> RPappro?. eua ri*e tpLHand fa tpHLdeay*
Anay:e a* an 5% netor
WN
unit
Nunit
unit
PunitP RR
W
WR
W
WRR ==
=
11
tpHL= (ln 2) RNCL tpLH= (ln 2) RPCLeay 6D7(
2W
W
unit
unit
gin C
W
WC 3=oad for the ne?t *ta3e(
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In'erter ith oad
oad 6CL7
eay
A**umption*( no oad B :ero deay
CL
tp= kRWCL
RW
RW
Wunit
> 1
ki* a -on*tant, eua to 0.9
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In'erter ith oad
oad
eay
Cint CL
eay > kRW6CintC CL7 > kRWCintC kRWCL = kRW Cint61C CL/Cint7
= eay 6Interna7 C eay 6oad7
CN= Cunit
CP= 2Cunit
2W
W
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!?ampe
CL= 8 C1
In &ut
C11 f f2
283 ==f
CL/C1ha* to De e'eny di*triDuted a-ro** N> 8 *ta3e*(
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&ptimum NumDer of Sta3e*
)or a 3i'en oad, CLand 3i'en input -apa-itan-e Cin)ind optima *i:in3 f
f
FNCfCFC in
N
inL
ln
ln wit ===
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Euffer e*i3n
1
1
1
1
F
G
G
G
G
G
2.F F
1
22.
N f tp
% "' "
2 ) %)
* ' %
' 2.) %.*
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Poer
i**ipation
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Hhere oe* Poer +o in %M&S=
+ D,n$&-. Po/e0 Con12&pt-on
+ S3o0t C-0.2-t C200ent1
+ Le$4$5e
C3$05-n5 $n6 D-1.3$05-n5 C$p$.-to01
S3o0t C-0.2-t P$t3 7et/een S2ppl, R$-l1 620-n5 S/-t.3-n5
Le$4-n5 6-o6e1 $n6 t0$n1-1to01
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ynami- Poer i**ipation
Energy/transition = CL * Vdd
Power = Energy/transition *f = CL* Vdd* f
!eed to reduce CL" Vdd" andfto reduce power#
Vin Vout
CL
V!!
!ot a $unction o$ transistor si%es&
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Modification for Circuits with Reduced Swing
CL
Vdd
Vdd
Vdd -Vt
E0 1 CL Vdd Vdd Vt( )=
Can exploit reduced swing to lower power
(e.g., reduced bit-line swing in memory)
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Short Circuit CurrentsShort Circuit Currents
Vin Vout
CL
Vdd
IVDD(
mA)
0.15
0.10
0.05
Vin(V)5.04.03.02.01.00.0
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How to keep Short-Circuit Currents Low?How to keep Short-Circuit Currents Low?
Sort "ir"uit "urrent #oes to $ero if tfall%% trise&
'ut "ant !o tis for "as"a!e lo#i"& so ...
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Minimizing Short-Circuit PowerMinimizing Short-Circuit Power
0 1 2 3 4 50
1
2
3
4
5
6
7
8
tsin/t
sout
Pnorm
V!! =1.5
V!! =2.5
V!! =3.3
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LeakageLeakage
Vout
Vdd
Sub-ThresholdCurrent
Drain JunctionLeakage
SuDthre*hod -urrent one of mo*t -ompein3 i**ue*
in oener3y -ir-uit de*i3nene0$l S$l-n5
-6e$l &o6el 6-&en1-on1 $n6 Bolt$5e 1$le
to5et3e0 7, t3e 1$&e f$to0 S
&o1t o&&on &o6el nt-l 0eentl,
onl, 6-&en1-on1 1$le@ Bolt$5e1 0e&$-n on1t$nt
&o1t 0e$l-1t- fo0 to6$,1 1-t$t-on Bolt$5e1 $n6 6-&en1-on1 1$le /-t3 6-ffe0ent f$to01
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e'i-e*
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Pro-e**or S-ain3
P/Gelsin%er' Processors "or the Ne Milleni.m (SS22 300
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Pro-e**or Poer
P/Gelsin%er' Processors "or the Ne Milleni.m (SS22 300
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Pro-e**or Performan-e
P/Gelsin%er' Processors "or the Ne Milleni.m (SS22 300
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2010 &utoo
Performan-e 2L/1 month*; 1 "IP 6terra in*tru-tion*/*7
; 80 +4: -o-
Si:e; No of tran*i*tor*( 2 Eiion; ie( G0G0 mm
Poer
; 10H
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Some intere*tin3 ue*tion*
Hhat i -au*e thi* mode to Drea=
Hhen i it Drea=
Hi the mode 3raduay *o don=; Poer and poer den*ity
; eaa3e
; Pro-e** ariation