Bipolar Junction Transistors Topics Covered in Chapter 28 28-1: Transistor Construction 28-2: Proper Transistor Biasing 28-3: Operating Regions 28-4: Transistor

Bipolar Junction TransistorsBipolar Junction Transistors

Topics Covered in Chapter 28 28-1: Transistor Construction

28-2: Proper Transistor Biasing28-3: Operating Regions28-4: Transistor Ratings

28-5: Checking a Transistor with an Ohmmeter28-6: Transistor Biasing

ChapterChapter2828

© 2007 The McGraw-Hill Companies, Inc. All rights reserved.

28-1: Transistor Construction28-1: Transistor Construction

A transistor has three doped regions, as shown in Fig. 28-1 (next slide).

Fig. 28-1 (a) shows an npn transistor, and a pnp is shown in (b).

For both types, the base is a narrow region sandwiched between the larger collector and emitter regions.

McGraw-Hill © 2007 The McGraw-Hill Companies, Inc. All rights reserved.

28-1: Transistor Construction28-1: Transistor Construction

Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display.

Fig. 28-1

The emitter region is heavily doped and its job is to emit carriers into the base. The base region is very thin and lightly doped. Most of the current carriers injected into the base from emitter pass on to the collector. The collector region is moderately doped and is the largest of all three regions.

EBC

Bipolar Transistors

Base

Collector

Emitter

Base

Collector

N

P

N

P

N

P

Emitter

28-2: Proper Transistor Biasing28-2: Proper Transistor Biasing

For a transistor to function properly as an amplifier, the emitter-base junction must be forward-biased and the collector-base junction must be reverse-biased.

The common connection for the voltage sources are at the base lead of the transistor.

The emitter-base supply voltage is designated VEE and the collector-base supply voltage is designated VCC.

For silicon, the barrier potential for both EB and CB junctions equals 0.7 V

Schematic SymbolSchematic Symbol

Reversebias

Forwardbias

Transistor Biasing

IE

IC

IB

IE = IB + IC

Base

Emitter

Collector

N

P

N

28-2: Proper Transistor Biasing28-2: Proper Transistor Biasing


Fig. 28-4

Fig. 28-4 shows transistor biasing for the common-base connection. Proper biasing for an npn transistor is shown in (a). The EB junction is forward-biased by the emitter supply voltage, VEE. VCC reverse-biases the CB junction. Fig. 28-4 (b) illustrates currents in a transistor.CE voltage of an npn transistor must be positiveRatio of IC to IE is called DC alpha αdc

28-3: Operating Regions28-3: Operating Regions

Since emitter lead is common, this connection is called common-emitter connection Collector current IC is controlled solely by the base current, IB. By varying IB, a transistor can be made to operate in any one of the following regions

Active Saturation Breakdown Cutoff

Ratio of IC to IB is called DC beta βdc

Fig. 28-6: Common-emitter connection (a) circuit. (b) Graph of IC versus VCE for different base current values.

28-3: Operating Regions28-3: Operating Regions

Active Region Collector curves are nearly horizontal IC is greater than IB (IC = dc X IB)

Saturation IC is not controlled by IB

Vertical portion of the curve near the origin

Breakdown Collector-base voltage is too large and collector-base diode breaks down Undesired collector current

Cutoff IB = 0

Small collector current flows IC 0

Transistor CurrentsTransistor Currents

IE = IB + IC

IC = IE – IB

IB = IE – IC

dc =

αdc =

αdc =

ICIB

ICIE

dc

1 + dc

Example 28-4Example 28-4

A transistor has the following currents:IE = 15 mA

IB = 60 µA

Calculate αdc, and dc

IC = IE – IB = 14.94 mA

αdc = 0.996

dc = 249

28-4: Transistor Ratings28-4: Transistor Ratings

A transistor, like any other device, has limitations on its operations.

These limitations are specified in the manufacturer’s data sheet.

Maximum ratings are given for Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation

28-5: Checking a Transistor 28-5: Checking a Transistor with an Ohmmeterwith an Ohmmeter

Fig. 28-8

An analog ohmmeter can be used to check a transistor because the emitter-base and collector-base junctions are p-n junctions. This is illustrated in Fig. 28-8 where the npn transistor is replaced by its diode equivalent circuit.

Using a DMM to check a DiodeUsing a DMM to check a Diode

Ohmmeter ranges in DMMs do not provide the proper forward bias to turn on the diode

Set DMM to the special diode range In forward-bias, digital display indicates the forward

voltage dropped across the diode In reverse-bias, digital display indicates an over range

condition For silicon diode, using an analog meter, the ratio of

reverse resistance, RR, to forward resistance, RF, should be very large such as 1000:1 or more



Fig. 28-9

To check the base-emitter junction of an npn transistor, first connect the ohmmeter as shown in Fig. 28-9 (a) and then reverse the ohmmeter leads as shown in (b). For a good p-n junction made of silicon, the ratio RR/RF should be equal to or greater than 1000:1.



Fig. 28-10

To check the collector-base junction, first connect the ohmmeter as shown in Fig. 28-10 (a) and then reverse the ohmmeter leads as shown in (b). For a good p-n junction made of silicon, the ratio RR/RF should be equal to or greater than 1000:1. Although not shown, the resistance measured between the collector and emitter should read high or infinite for both connections of the meter leads.

28-6: Transistor Biasing28-6: Transistor Biasing

For a transistor to function properly as an amplifier, an external dc supply voltage must be applied to produce the desired collector current.

Bias is defined as a control voltage or current. Transistors must be biased correctly to produce the

desired circuit voltages and currents. The most common techniques used in biasing are

Base bias Voltage-divider bias Emitter bias


Fig. 28-12


Fig. 28-12 (a) shows the simplest way to bias a transistor, called base bias. VBB is the base supply voltage, which is used to forward-bias the base-emitter junction. RB is used to provide the desired value of base current. VCC is the collector supply voltage, which provides the reverse-bias voltage required for the collector-base junction. The collector resistor, RC, provides the desired voltage in the collector circuit

Transistor BiasingTransistor Biasing: Base Biasing

A more practical way to provide base bias is to use one power supply.

IB = VCC - VBE

RB

IC dc x IB

VCE VCC - ICRC



Fig. 28-14

The dc load line is a graph that allows us to determine all possible combinations of IC and VCE for a given amplifier.

For every value of collector current, IC, the corresponding value of VCE can be found by examining the dc load line.

A sample dc load line is shown in Fig. 28-14.

28-6: Transistor Biasing28-6: Transistor BiasingMidpoint BiasMidpoint Bias

Without an ac signal applied to a transistor, specific values of IC and VCE exist at a specific point on a dc load line

This specific point is called the Q point (quiescent currents and voltages with no ac input signal)

An amplifier is biased such that the Q point is near the center of dc load line ICQ = ½ IC(sat)

VCEQ = ½ VCC

Base bias provides a very unstable Q point, because IC and VCE are greatly affected by any change in the transistor’s beta value



Fig. 28-15

Fig. 28-15 illustrates a dc load line showing the end points IC (sat) and VCE (off), as well as the Q point values ICQ and VCEQ.

Base Bias – Example 1Base Bias – Example 1

Solve for IB, IC and VCE

Construct a dc load line showing the values of IC(sat), VCE(off), ICQ and VCEQ

Base Bias – Example 2Base Bias – Example 2

Solve for IB, IC and VCE




Fig. 28-18

The most popular way to bias a transistor is with voltage-divider bias.

The advantage of voltage-divider bias lies in its stability.

An example of voltage-divider bias is shown in Fig. 28-18.

VB = X VCC

R2

R1 + R2

VE = VB - VBE

IE IC

Voltage Divider Bias – Voltage Divider Bias – ExampleExample

Solve for VB, VE, IE, IC, VC and VCE




Fig. 28-19

Fig. 28-19 shows the dc load line for voltage-divider biased transistor circuit in Fig. 28-18. End points and Q points are

IC (sat) = 12.09 mAVCE (off) = 15 V ICQ = 7 mA VCEQ = 6.32 V



Fig. 28-23

Both positive and negative power supplies are available

Emitter bias provides a solid Q point that fluctuates very little with temperature variation and transistor replacement.

Emitter Bias – ExampleEmitter Bias – Example

Solve for IE, and VC

Documents

Bipolar Junction Transistors Topics Covered in Chapter 28 28-1: Transistor Construction 28-2: Proper Transistor Biasing 28-3: Operating Regions 28-4: Transistor