©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

BC

337/338

NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25°C unless otherwise noted

Electrical Characteristics Ta=25°C unless otherwise noted

hFE Classification

Symbol Parameter Value UnitsVCES Collector-Emitter Voltage

: BC337 : BC338

5030

VV

VCEO Collector-Emitter Voltage: BC337 : BC338

4525

VV

VEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 800 mAPC Collector Power Dissipation 625 mWTJ Junction Temperature 150 °CTSTG Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCEO Collector-Emitter Breakdown Voltage

: BC337 : BC338

IC=10mA, IB=04525

VV

BVCES Collector-Emitter Breakdown Voltage: BC337 : BC338

IC=0.1mA, VBE=05030

VV

BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 VICES Collector Cut-off Current

: BC337: BC338

VCE=45V, IB=0VCE=25V, IB=0

22

100100

nAnA

hFE1hFE2

DC Current Gain

VCE=1V, IC=100mAVCE=1V, IC=300mA

10060

630

VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 VVBE (on) Base Emitter On Voltage VCE=1V, IC=300mA 1.2 VfT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz 100 MHzCob Output Capacitance VCB=10V, IE=0, f=1MHz 12 pF

Classification 16 25 40hFE1 100 ~ 250 160 ~ 400 250 ~ 630hFE2 60- 100- 170-

BC337/338

Switching and Amplifier Applications• Suitable for AF-Driver stages and low power output stages• Complement to BC327/BC328

1. Collector 2. Base 3. Emitter

TO-921

Package DimensionsB

C337/338

0.46 ±0.10

1.27TYP

(R2.29)

3.86

MA

X

[1.27 ±0.20]

1.27TYP

[1.27 ±0.20]

3.60 ±0.20

14.4

7 ±0

.40

1.02

±0.

10

(0.2

5)4.

58 ±

0.20

4.58+0.25–0.15

0.38+0.10–0.05

0.38

+0.1

0–0

.05

TO-92

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

©2002 Fairchild Semiconductor Corporation Rev. I1

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