Rudy Peeters

ASML’s NXE platform performance

EUVL Toyama

Oct 7, 2013

Introduction

NXE:3100

NXE:3300B

Summary and acknowledgements

Public

Slide 2

Contents

EUV is a cost effective solution Public

Slide 3

EUV enables 50% Scaling for the 10 nm logic node Layout restrictions and litho performance limit shrink to ~25% using immersion

Reference

N20/16

double

patterning

triple

patterning

EUV

No

rma

lize

d d

ie s

ize

[%

]

Source: ARM

EUV meets all litho requirements

Triple patterning does not show a process window

Public

Slide 4

ASML’s NXE:3100 and NXE:3300B Public

Slide 5

NXE:3100 NXE:3300B

NA 0.25 0.33

Illumination Conventional 0.8 s Conventional 0.9 s

Off-axis illumination

Resolution 27 nm 22 nm

Dedicated Chuck Overlay /

Matched Maching Overlay

4.0 nm / 7.0 nm 3.0 nm / 5.0 nm

Productivity 6 - 60 Wafers / hour 50 - 125 Wafers / hour

Resist Dose 10 mJ / cm2 15 mJ / cm2

Introduction

NXE:3100

NXE:3300B

Summary and acknowledgements

Public

Slide 6

Contents

NXE:3100 in use at customers for cycles of learning

Public

Slide 7

Data courtesy of TSMC

NXE:3100 shows stable performance Public

Slide 8

Data courtesy of imec

The NXE:3100 has exposed >46,000 wafers Public

Slide 9

0

5000

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201027

201032

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Acc

um

ula

ted

waf

ers

exp

ose

d o

n N

XE:

31

00

• Cycles of learning

• Stable performance

• Steady wafer output

Introduction

NXE:3100

NXE:3300B

Summary and acknowledgements

Public

Slide 10

Contents

Lens performance consistent and better than

requirements population for NXE:3300B

Data courtesy of Carl Zeiss SMT GmbH

Public

Slide 11

Every bar is an individual lens

NXE:3300B shows excellent focus performance Focus uniformity performance across the wafer <12nm

System B

9.5nm

System A

10.4nm System C

11.5nm

Public

Slide 12

Module improvements to support better overlay on the

NXE:3300B system Public

Slide 13

Improved wafer load

grid performance

Flatter wafer clamp

flatness

Flatter reticle stage

clamps

Improved lens

performance

Customer On-Product-Overlay roadmap Public

Slide 14

ASML assessment based on customer inputs

NXE overlay performance presented at EUVL 2012

0

5

10

15

20

25

30

35

Aug'10 Oct'11 Sept'12

Overl

ay [

nm

]

NXE:3100 SCO NXE:3100 MMO NXE:3300 SCO NXE:3300 MMO

Public

Slide 15

10 nm

99.7%x: 2.8 nmy: 2.7 nm

XYSCO_SCO_on_ref_SCO_20120721 (2-1)

10 nm

99.7%x: 4.9 nmy: 5.8 nm

XYMMO_mmo_20120729_0428 (S2F)

SCO: 2.8nm NXE-NXT

MMO: 5.9nm

First NXE:3300 results

More than one year of NXE:3100 overlay integration

NXE:3300B overlay performance improved significantly

within one year Public

Slide 16

NXE:3300B matched machine overlay to NXT:1970Ci <3.6nm Public

Slide 17

10par/chuck+6parCPE

10 nm

99.7%x: 2.9 nmy: 3.6 nm

all

(nm

)

0

1

2

3

4

5

6

7

8

9

10

1 20

2.5

5

7.5

10 10par/chuck+6parCPE

Lot (2.9,3.6)

Lot (3.0,3.7) (2.9,3.5)

X

Y

10par/chuck+6par CPE corrected

6parCPE modeled from average wafer

Full wafer CDU performance for 22nm dense and iso lines at

required performance level

Dense lines H

FWCDU = 1.5nm

Dense lines V

FWCDU = 1.4nm

Isolated lines V

FWCDU = 1.7nm

Isolated lines H

FWCDU = 1.6nm

Public

Slide 18

Measured with Yieldstar, targeted with SEM

Resolution shown on NXE:3300B for dense line spaces, regular

and staggered contact holes; all single exposures Public

Slide 19

13nm HP

14nm HP

Dipole30,

Chemically Amplified

Resist (CAR)

Quasar 30 (CAR)

17nm HP

18nm HP

18nm HP

19nm HP

Large Annular (CAR)

Dipole45,

Inpria Resist

13nm HP

14nm HP

EUV ArF immersion

Node: N10 (23nm HP)

Target insertion point for EUV

Node: N20 (32nm

HP)

Single Exposure

Conventional illumination

Double Patterning

(design split)

Best focus difference ~10nm Best focus difference

up to 40-60nm

Overlapping DoF

current 100..120nm (expected to improve after

further optimization (e.g. OPC))

Overlapping DoF

typical ≈ 60nm

Public

-80nm

-60nm

-40nm

-20nm

0nm

20nm

40nm

60nm

80nm

focus

Slide 20

NXE:3300B enables single exposure random logic metal

layer with large DoF minimum HP 23 nm (N10 logic cell)

Position in the exposure slit -12mm 0mm +12mm

Excellent print performance over the full exposure slit

The NXE:3300B offers new concept off-axis illumination

to enhance process window

0

2

4

6

8

10

0 20 40 60 80 100 120 140Ex

po

sure

lati

tud

e (

%)

Depth of focus (nm) Simulations by Tachyon SMO NXE

Public

Slide 21

Line ends - tip2line minimum print gap size at a dose of

<16mJ/cm2 with off-axis illumination Public

Slide 22

Lower dose resist

N10

28nm

36nm

28nm

36nm Conv. Quasar 22nm 26nm

Higher dose resist

N7 26nm

22nm

Conv. Quasar

Ded

icate

d C

hu

ck

Ov

erl

ay [

nm

]

1 2 30

2

4

6

8Lot (1.3,1.3)

1.31.0

1.21.4

1.41.3

X

Y

Day

5 nm

99.7%x: 1.3 nmy: 1.3 nm

Filtered S2F Chuck 1 (S2F)

NXE:3300B imaging and overlay beyond expectations matched overlay to immersion ~3.5nm

Matc

hed

Mach

ine O

verl

ay

NX

E-

imm

ers

ion

[n

m]

1 2 30

2

4

6

8

Lot (3.4,3.0)

3.52.7 3.0

2.3

3.23.3

X

Y

Day

5 nm

99.7%x: 3.4 nmy: 3.0 nm

Filtered S2F (S2F)

XT:1950i reference wafers

EEXY sub-recipes

18par (avg. field) +

CPE (6 par per field)

Full wafer CDU = 1.5nm

22nm HP

BE = 15.9 mJ/cm2

EL = 13%

DoF = 160 nm

Scanner qualification

Scanner capability

18 nm HP 13 nm HP 23 nm HP

9 nm HP

Single exposure EUV Spacer

Public

Slide 23

>900,000 wafer cycled on NXE:3300B for integration and

reliability testing Public

Slide 24

0

100000

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1338Nu

mb

er

of w

afe

rs c

ycle

d fo

r re

liab

ility

te

stin

g

Source Pedestal

Scanner

Pedestal

Fab Floor Fab Floor

Sub-fab Floor

Scanner

metrology for

source to

scanner

alignment

CO2-droplet Metrology

Main Pulse / Pre Pulse

split

Focusing

CO2 system

Tin

catch

Vessel

Droplet

Generator

Collector

EUV&droplet

Metrology

Beam

Tra

nsp

ort

Power Amplifiers PP&MP Seed unit

Inte

rmed

iate

Fo

cu

s U

nit

Plasma+Energy

Control

Machine Control

x z

x=droplet stream direction, z=CO2 light direction, y=orthogonal

EUV source system cross-section Public

Slide 25

Presentation: David Brandt

Power

Availability

Dose control

Key components:

• Drive Laser

• Collector

• Droplet generator

• Vessel

• Controls (E,x,y,z,t)

• Final Focus Assembly

MOPA-PrePulse EUV power demonstrated up to 55W

under closed loop dose control Public

Slide 26

500 1000 1500 2000 2500 3000 35000.5

1

1.5

2

Time [sec]

EU

V (

Mean+

99.7

%)

[mJ]

10-2

10-1

100

101

102

0

10

20

30

40

50

60

70

80

90

100

Dose Repro [%]

Good D

ies (

Exposure

s)

[%]

100.00% Exp. < 0.5% Repro 99.7% Exp < 0.14% Repro

Repro

0.5% Repro

99.7%

500 1000 1500 2000 2500 3000 35000.5

1

1.5

2

Time [sec]

EU

V (

Mean+

99.7

%)

[mJ]

10-2

10-1

100

101

102

0

10

20

30

40

50

60

70

80

90

100

Dose Repro [%]

Good D

ies (

Exposure

s)

[%]

97.53% Exp. < 0.5% Repro 99.7% Exp < 2.29% Repro

Repro

0.5% Repro

99.7%

100% die yield 97.5% die yield

50W 55W

Public

Slide 27

0 10 20 30 40 50 60-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

0 10 20 30 40 50 60-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

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-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

Repeatable 50W MOPA PrePulse EUV Power and Dose Stability Dose Stability <±0.5%, Die Yield >99.7%

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

we

r [W

]

The mask defect challenge ASML achieved 10x per year improvement for pellicle-less operation

(pellicle would reduce defect requirements substantially)

Absorber

pattern

Reflected

illumination

Reflective

multilayer

EUV Reticles

(13.5nm)

Reticle

Ad

de

d p

art

icle

s >

92

nm

pe

r re

ticle

pa

ss

Particle (nm size)

Customer requirement for

full production without

pellicle @ resolution

Particle (mm size)

Pellicle

Progress made on ASML machines on

added particles per reticle exchange

over the past few years

Public

Slide 28

Introduction

NXE:3100

NXE:3300B

Summary and acknowledgements

Public

Slide 29

Contents

Summary

• NXE:3100 in use for process and device development at customers

• NXE:3300B performance fit for customer development 10nm Logic and sub-20nm DRAM

• Overlay performance of DCO<2nm and MMO<4nm demonstrated

• Resolution of 13nm LS and 18nm Contact Holes demonstrated. Further process optimization to be done

• Good imaging performance for 1D (Line Space), 2D (Contact Holes and Metal 1), and Tip-to-Tip / Tip-to-Line have been shown

• Dose reduction achieved by utilizing contrast enhancement with off-axis illumination

• 50W repeatable source power demonstrated with good dose control

• Good progress in defectivity performance improvements and pellicle development

Slide 30

Public 13nm HP

1 2 30

2

4

6

8

Lot (3.4,3.0)

3.52.7 3.0

2.3

3.23.3

X

Y

Ma

tch

ed

Ma

chin

e

Ove

rlay [

nm

]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

50W repeatable

power

Acknowledgements

Slide 31

The work presented today, is the result of hard work and dedication

of teams at ASML and many technology partners worldwide

including our customers

Special thanks to our partners and customers for allowing us to use

some of their data in this presentation

Public