APPLICATION FOR 1.575 GHz GPS WITH - CEL · APPLICATION FOR 1.575 GHz GPS WITH ... Unit Circuit Current ICC No Signal 3.7 3.1 12 mA Noise Figure NF 1.07 1.14 1.08 dB Power

Document No. PU10570EJ01V0TN (1st edition)

Date Published July 2005 CP(K)

NEC Compound Semiconductor Devices, Ltd. 2005 Printed in Japan

APPLICATION FOR 1.575 GHz GPS WITHµPC8211TK, µPC8215TU, AND µPC8226TK

Reference Design of Evaluation Board for 1.575 GHz LNA

Technical Note

Technical Note PU10570EJ01V0TN 2

The information in this document will be updated without notice.

This document introduces general applications of this product. The application circuits and circuit constants

in this document are examples and are not intended for use in actual mass production design. In addition,

please note that restrictions for the application circuit or standardization of the application circuit characteristics

are not intended.

In particular, characteristics of high-frequency ICs change depending on the external components and the

mounting pattern. Therefore, the external circuit constants should be determined based on the required

characteristics on your planned system while referring to this document, and the characteristics should be

checked before using these ICs.


When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authorityhaving competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

M8E 00. 4 - 0110

The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipmentand industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

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CONTENTS

1. DESCRIPTION....................................................................................................................................... 5 2. OVERVIEW ............................................................................................................................................ 7

2. 1 Electrical Characteristics Overview.......................................................................................... 7 2. 2 Evaluation Circuit ....................................................................................................................... 8

3. PRODUCT RECOMMENDATIONS AND EXTERNAL COMPONENT CONSTANT SELECTION..... 10

3. 1 µPC8211TK and µPC8226TK (for use in mobile phones) ..................................................... 10 3. 1. 1 Noise Figure and Input-Output Return Loss at 1.575 GHz..........................................................10 3. 1. 2 Frequency Characteristics of Noise Figure and Input-Output Return Loss .................................15 3. 1. 3 Main Electrical Characteristics ....................................................................................................20

3. 2 µPC8215TU (for use in PDAs).................................................................................................. 20 3. 2. 1 Noise Figure and Input-Output Return Loss at 1.575 GHz..........................................................20 3. 2. 2 Frequency Characteristics of Noise Figure .................................................................................22

3. 3 Measurement Circuit Configuration ....................................................................................... 23 3. 3. 1 NF Measurement Circuit Configuration .......................................................................................23 3. 3. 2 S-Parameter Measurement Circuit Configuration........................................................................23

4. BOARD ASSEMBLY & STANDARD ELECTRICAL CHARACTERISTICS.................................. 24

4. 1 Product Information ................................................................................................................. 24 4. 1. 1 Ordering Information ...................................................................................................................24 4. 1. 2 Pin Connections ..........................................................................................................................25 4. 1. 3 Internal Block Diagram................................................................................................................26

4. 2 Evaluation Board for a 1.575 GHz GPS LNA with µPC8211TK............................................. 27 4. 2. 1 Evaluation Board Pattern Layout.................................................................................................27 4. 2. 2 Standard Electrical Characteristics .............................................................................................29

4. 3 Evaluation Board for a 1.575 GHz GPS LNA with µPC8226TK............................................. 34 4. 3. 1 Evaluation Board Pattern Layout.................................................................................................34 4. 3. 2 Standard Electrical Characteristics .............................................................................................36

4. 4 Evaluation Board for a 1.575 GHz GPS LNA with µPC8215TU............................................. 41 4. 4. 1 Evaluation Board Pattern Layout.................................................................................................41 4. 4. 2 Standard Electrical Characteristics .............................................................................................43


1. DESCRIPTION

The µPC8211TK, µPC8215TU, and µPC8226TK are silicon germanium (SiGe) microwave monolithic integrated

circuits (MMIC) designed as low noise, high-gain amplifiers for GPS and mobile communications.

These ICs are manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

The use of these three devices in evaluation boards implementing LNAs (Low Noise Amplifiers) at 1.575 GHz GPS

is described in this document.

Applications for 1.575 GHz GPS are wide-ranging, including mobile phones, car navigation systems, and PDAs,

among others. Each application has unique characteristics, and due to the variety of demands on the LNA block that

configures the GPS, it is important to select the best-suited device and implement the best-suited application circuit

design for the target specification.

For the LNA on the 1st stage of the GPS RF front-end, a low noise high-gain device is required, so as to achieve

high sensitivity.

For systems in antenna module configurations such as car navigation systems, a discrete device such as

GaAsFET is required in the LNA block. This is due to the need for the lowest amount of noise possible, so as to avoid

loss in the wiring between the module and the RF front-end. Multi-stage configurations are also a necessity in

achieving the target gain.

However, for LNAs in systems in which the parts after the antenna are fully integrated, the aforementioned losses

do not arise. As such, the LNA’s demands on the NF can be kept in check, as compared with systems that include

antenna modules. In systems to be used in mobile phones, demands for smaller size have escalated. Further,

demand up to present has sought after simple yet low noise and high-gain designs.

Thus, expectations for monolithic ICs in LNAs have been particularly high, since the integrated circuit simplifies the

circuit design, and the circuit can be made very small due to the small size of the external components.

The high frequency characteristics of MMIC have recently been improved through adoption of the SiGe bipolar

process. NEC Compound Semiconductor Devices has produced several SiGe monolithic ICs whose designs have

been optimized for use in mobile communications.

At present, the use of such SiGe MMICs is becoming prevalent with respect to mobile phones and PDAs in which

the parts after the antenna are fully integrated.

The µPC8211TK and µPC8226TK, for use in mobile phones (GP = 18 dB), and the µPC8215TU, for use in PDAs

(GP = 28 dB), feature power gain and low noise (NF = 1.1 dB) characteristics ideally suited for these respective

applications. The µPC8211TK and µPC8226TK also have a built-in power-saving function.

Table 1-1 shows the SiGe/MMIC product line-up for LNAs at 1.575 GHz.

Figure 1-1 shows a system block example for a GPS application.

Table 1-1. SiGe/MMIC Product Line-up for LNAs at 1.575 GHz

Part Number VCC

(V)

ICC

(mA)

NF

(dB)

GP

(dB)

PO (1 dB)

(dBm)

IIP3

(dBm) Marking

µPC8211TK 3.7 1.1 18.8 −3.8 −13.0 6G

µPC8226TK 3.0 3.1 1.1 17.7 −5.5 −12.0 6H

µPC8215TU 12.0 1.1 28.5 +7.6 −15.5 8215

Remark See Table 2-1 for the measurement conditions. The above data is for reference.


Figure 1-1. System Block Example for GPS Application

PC8211TKµPC8215TUµPC8226TKµ

LNA

RF Front-end BlockAntenna

RF Front-end LSI

Base-band Block

Base-band LSI


2. OVERVIEW

2. 1 Electrical Characteristics Overview

Table 2-1 shows the electrical characteristics overview for the µPC8211TK, µPC8215TU, and µPC8226TK when

applied in a product implementing a 1.575 GHz GPS LNA. These are the standard characteristics of the evaluation

board.

Table 2-1. Electrical Characteristics Overview for Evaluation Board for LNA of 1.575 GHz GPS

(TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, unless otherwise specified)

Value Parameter Symbol Condition

µPC8211TK Note µPC8226TK Note µPC8215TU

Unit

Circuit Current ICC No Signal 3.7 3.1 12 mA

Noise Figure NF 1.07 1.14 1.08 dB

Power Gain GP Pin = −30 dBm 18.8 17.7 28.5 dB

Gain 1 dB Compression

Output Power

PO (1 dB) −3.8 −5.5 +7.6 dBm

Output Power PO Pin = −10 dBm +2.5 +1.2 dBm

Input 3rd Order Distortion

Intercept Point

IIP3 −13.0 −12.0 −15.5 dBm

Output 3rd Order Distortion

Intercept Point

OIP3 +6.0 +6.0 +13.0 dBm

Input Return Loss RLin Pin = −30 dBm 7.0 7.0 6.8 dB

Output Return Loss RLout Pin = −10 dBm 17.4 14.1 17.2 dB

Isolation ISL Pin = −10 dBm 33.4 37.5 45.6 dB

Note VPS = 3.0 V


2. 2 Evaluation Circuit

Figure 2-1 shows an evaluation circuit for a 1.575 GHz GPS LNA, using the µPC8211TK and the µPC8226TK,

where the configuration of the external components is identical for each case. The internal circuits for each LSI differ,

and thus the external component constant is optimized for each product.

Photo 2-1 is a photo of the evaluation board, including the components, with the µPC8211TK. The evaluation

board is the same for the µPC8226TK.

Figure 2-2 is an evaluation circuit for a 1.575 GHz GPS LNA, with the µPC8215TU, and Photo 2-2 is a photo of the

evaluation board, including the components.

Figure 2-1. Evaluation Circuit for 1.575 GHz GPS LNA

(µPC8211TK and µPC8226TK)

61

2

3

5

4VPS

IN

OUT

VCCC1

C2

C4

L1 C5

R1 L2

L3 C3

Bias

Photo 2-1. Evaluation Board Including Components (µPC8211TK)


Figure 2-2. Evaluation Circuit for 1.575 GHz GPS LNA (µPC8215TU)

VCC

INPUT

5

6

7

8

4

2

1

3

OUTPUT

C1 L1

C5

C3

Photo 2-2. Evaluation Board Including Components (µPC8215TU)


3. PRODUCT RECOMMENDATIONS AND EXTERNAL COMPONENT CONSTANT SELECTION

The RF characteristics required of the LNA differ depending on the antenna gain of the target GPS set, as well as

the design of elements such as the front-end and base-band circuits.

This section describes 1.575 GHz LNA usage examples for each product, as ideally suited for use in mobile

phones.

3. 1 µPC8211TK and µPC8226TK (for use in mobile phones)

The µPC8211TK and µPC8226TK have power gain (GP = 18 dB) and low noise (NF = 1.1 dB) characteristics that

are ideal for use in mobile phones, and also include a built-in power-saving function. Further, the µPC8226TK has a

built-in protective diode, and has improved ESD resistance.

The evaluation circuit for a 1.575 GHz GPS LNA with these products is shown in Figure 2-1 in the preceding

section.

3. 1. 1 Noise Figure and Input-Output Return Loss at 1.575 GHz

(1) Selection of Input Parallel Capacitor

Figure 3-1 (µPC8211TK) and Figure 3-2 (µPC8226TK) show the characteristics for the input parallel capacitor

(C2), the noise figure (NF), and the input-output return loss (RLin and RLout) at 1.575 GHz.

The NF characteristics required of the LNA are closely related to element such as the error correction circuit design

in the base-band circuit. However, when the C2 value is selected when the NF characteristics take priority, the RLin

characteristics decrease a great deal, due to the fact that the NF characteristics and the RLin characteristics stand in a

trade-off relation. Thus, the C2 value is selected while considering the RLin characteristics. Using the µPC8211TK

(Figure 3-1), an exceptional NF of 1.0 dB or less can be achieved when C2 is approximately 1.0 pF or less, although

the RLin obtained is only a few dB. Therefore, the balance between the required NF and RLin characteristics must be

considered when selecting C2. The same issue applies for the µPC8226TK (Figure 3-2).

Figure 3-1. Input Parallel Capacitor vs. Noise Figure and Input-Output Return Loss for µPC8211TK

0.0

0.5

1.0

1.5

2.0

2.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C3 = 82 pF

L1 = 4.7 nH

L2 = 22 nH

L3 = 10 nH

Input Parallel Capacitor C2 (pF)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RLi

n/R

Lout (

dB)

RLout

NF

RLin


Figure 3-2. Input Parallel Capacitor vs. Noise Figure and Input-Output Return Loss for µPC8226TK

0.0

0.5

1.0

1.5

2.0

2.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C3 = 82 pF

L1 = 5.6 nH

L2 = 22 nH

L3 = 8.2 nH

RLout

NF

RLin

Input Parallel Capacitor C2 (pF)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RLi

n/R

Lout (

dB)


(2) Selection of Input Series Capacitor

The input series capacitor (C1) is a DC cut capacitor.

Figure 3-3 (µPC8211TK) and Figure 3-4 (µPC8226TK) show the relations between C1 and the noise figure (NF),

the input return loss (RLin), and the output return loss (RLout), at 1.575 GHz.

For both products, the NF decreases when the value of C1 is approximately 40 pF or less, but when the value of

C1 is approximately 40 pF or more, RLin and RLout remain constant. Thus, the value of C1 should be selected as

approximately 40 pF or more (47 pF).

Figure 3-3. Input Series Capacitor vs. Noise Figure and Input-Output Return Loss for µPC8211TK

0.9

1.0

1.1

1.2

1.3

1.4

0 10 20 30 40 50 60 70 80 90 100 110

0

5

10

15

20

25

Figure 3-4. Input Series Capacitor vs. Noise Figure and Input-Output Return Loss for µPC8226TK

0.9

1.0

1.1

1.2

1.3

1.4

0 10 20 30 40 50 60 70 80 90 100 110

0

5

10

15

20

25

VCC = VPS = 3.0 V

f = 1.575 GHz

C2 = 0.5 pF

C3 = 82 pF

L1 = 5.6 nH

L2 = 22 nH

L3 = 8.2 nH

VCC = VPS = 3.0 V

f = 1.575 GHz

C2 = 1.3 pF

C3 = 82 pF

L1 = 4.7 nH

L2 = 22 nH

L3 = 10 nH

Input Series Capacitor C1 (pF)

RLout

NF

RLin

C1 = 47 pF

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RLi

n/R

Lout (

dB)

RLout

NF

RLin

C1 = 47 pF


Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RLi

n/R

Lout (

dB)


(3) Selection of Output Parallel Inductor

Figure 3-5 (µPC8211TK) and Figure 3-6 (µPC8226TK) show the relations between the output parallel inductor (L2)

and the noise figure (NF), the input return loss (RLin), and the output return loss (RLout), at 1.575 GHz.

For both products, L2 is closely related to the output return loss (RLout), and when L2 is approximately 20 nH or

less, RLout decreases drastically. Moreover, the frequency response that is discussed later (Figure 3-15 (µPC8211TK)

and Figure 3-16 (µPC8226TK)) should also be considered. Thus, L2 should be selected as 20 nH or greater (22 nH)

for both the µPC8211TK and the µPC8226TK.

Figure 3-5. Output Parallel Inductor vs. Noise Figure and Input-Output Return Loss for µPC8211TK

0.9

1.0

1.1

1.2

1.3

1.4

15 20 25 30 35

0

5

10

15

20

25

Figure 3-6. Output Parallel Inductor vs. Noise Figure and Input-Output Return Loss for µPC8226TK

0.9

1.0

1.1

1.2

1.3

1.4

15 20 25 30 35

0

5

10

15

20

25

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C2 = 0.5 pF

C3 = 82 pF

L1 = 5.6 nH

L3 = 8.2 nH

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C2 = 1.3 pF

C3 = 82 pF

L1 = 4.7 nH

L3 = 10 nH

Output Parallel Inductor L2 (nH)

RLout

NF

RLin

L2 = 22 nH

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RL i

n/R

Lout (

dB)

RLout

NF

RLin

L2 = 22 nH

Output Parallel Inductor L2 (nH)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RL i

n/R

Lout (

dB)


(4) Selection of Output Series Inductor

Figure 3-7 (µPC8211TK) and Figure 3-8 (µPC8226TK) show the relations between the output series inductor (L3)

and the noise figure (NF), the input return loss (RLin), and the output return loss (RLout), at 1.575 GHz.

L3 is closely related to RLout, and the frequency response that is discussed later (Figure 3-17 (µPC8211TK) and

Figure 3-18 (µPC8226TK)) should also be considered. Thus, L3 should be selected as 10 nH for the µPC8211TK, or

as 8.2 nH for the µPC8226TK.

Figure 3-7. Output Series Inductor vs. Noise Figure and Input-Output Return Loss for µPC8211TK

0.9

1.0

1.1

1.2

1.3

1.4

6 7 8 9 10 11

0

10

20

30

40

50

Figure 3-8. Output Series Inductor vs. Noise Figure and Input-Output Return Loss for µPC8226TK

0.9

1.0

1.1

1.2

1.3

1.4

6 7 8 9 10 11

0

10

20

30

40

50

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C2 = 0.5 pF

C3 = 82 pF

L1 = 5.6 nH

L2 = 22 nH

VCC = VPS = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C2 = 1.3 pF

C3 = 82 pF

L1 = 4.7 nH

L2 = 22 nH RLout

NF

RLin

L3 = 10 nH

Output Series Inductor L3 (nH)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RLi

n/R

Lout (

dB)

RLout

NF

RLin

L3 = 8.2 nH

Output Series Inductor L3 (nH)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

RL i

n/R

Lout (

dB)


3. 1. 2 Frequency Characteristics of Noise Figure and Input-Output Return Loss

(1) Frequency Characteristics of Noise Figure

Figure 3-9 (µPC8211TK) and Figure 3-10 (µPC8226TK) show the frequency characteristics of the noise figure (NF)

and the NF associated gain (Ga). The NF associated gain is tuned to 1.575 GHz.

Figure 3-9. Noise Figure and NF Associated Gain vs. Frequency for µPC8211TK

0.9

1.0

1.1

1.2

1.3

1.4

1540 1550 1560 1570 1580 1590 1600 1610

10

12

14

16

18

20

Figure 3-10. Noise Figure and NF Associated Gain vs. Frequency for µPC8226TK

0.9

1.0

1.1

1.2

1.3

1.4

1540 1550 1560 1570 1580 1590 1600 1610

10

12

14

16

18

20

VCC = VPS = 3.0 V

C1 = 47 pF

C2 = 0.5 pF

C3 = 82 pF

L1 = 5.6 nH

L2 = 22 nH

L3 = 8.2 nH

VCC = VPS = 3.0 V

C1 = 47 pF

C2 = 1.3 pF

C3 = 82 pF

L1 = 4.7 nH

L2 = 22 nH

L3 = 10 nH

Frequency f (MHz)

Noi

se F

igur

e N

F (

dB)

NF

Ass

ocia

ted

Gai

n G

a (d

B)

Ga

NF

f = 1 575 MHz

Ga

NF

f = 1 575 MHz

Frequency f (MHz)

Noi

se F

igur

e N

F (

dB)

NF

Ass

ocia

ted

Gai

n G

a (d

B)


(2) Frequency Characteristics of Input Return Loss

Figure 3-11 (µPC8211TK) and Figure 3-12 (µPC8226TK) show the frequency characteristics of the input return

loss (RLin).

The amount of loss for RLin changes drastically as a result of selecting the input parallel capacitor (C2).

Also, as shown in Figure 3-1 (µPC8211TK) and Figure 3-2 (µPC8226TK), RLin and the noise figure (NF) stand in a

trade-off relation.

Figure 3-11. Input Return Loss vs. Frequency for µPC8211TK

1.575 2.475 0.475

20

10

0

VCC = VPS = 3.0 VC1 = 47 pFC3 = 82 pFL1 = 4.7 nHL2 = 22 nHL3 = 10 nH

C2 = 2.5 pF

C2 = 1.3 pF

C2 = 0.5 pF

1.575 2.475 0.475

20

10

0

VCC = VPS = 3.0 VC1 = 47 pFC3 = 82 pFL1 = 4.7 nHL2 = 22 nHL3 = 10 nH

C2 = 2.5 pF

C2 = 1.3 pF

C2 = 0.5 pF

Figure 3-12. Input Return Loss vs. Frequency for µPC8226TK

1.575 2.475 0.475

20

10

0

VCC = VPS = 3.0 VC1 = 47 pFC3 = 82 pFL1 = 5.6 nHL2 = 22 nHL3 = 8.2 nH

C2 = 2.2 pF

C2 = 0.3 pF

C2 = 0.5 pF

1.575 2.475 0.475

20

10

0


C2 = 2.2 pF

C2 = 0.3 pF

C2 = 0.5 pF

The input series inductor (L1) should be selected as the value where the resonance frequency matches the

approximate required frequency (1.575 GHz).

Although it would be ideal for the value of the resonance center frequency to precisely match the required

frequency of 1.575 GHz, due to limits imposed by the commercially available line-up of products (for example, the

next value after 4.7 nH being 5.6 nH), the best value out of those available should be selected. In this case, 4.7 nH

should be selected for the µPC8211TK, and 5.6 nH should be selected for the µPC8226TK.

Figure 3-13 shows the transition of the resonance center frequency in accordance with the value of L1, and Figure

3-14 shows the frequency characteristics of RLin when 4.7 nH is selected as the value of L1. Since the resonance

Inpu

t Ret

urn

Loss

RLi

n (d

B)

Frequency f (GHz)

Inpu

t Ret

urn

Loss

RLi

n (d

B)

Frequency f (GHz)


center frequency deviates a great deal from the target frequency (1.575 GHz) when the value of L1 is 4.7 nH,

adequate loss cannot be obtained for RLin even if C2 is changed.

Figure 3-13. Input Return Loss with Input Series Inductor vs. Frequency for µPC8226TK

L1 = 4.7 nH

L1 = 5.6 nH

1.575 2.4750.475

20

10

0

VCC = VPS = 3.0 VC1 = 47 pFC2 = 2.2 pFC3 = 82 pFL2 = 22 nHL3 = 8.2 nH

L1 = 4.7 nH

L1 = 5.6 nH

1.575 2.4750.475

20

10

0

VCC = VPS = 3.0 VC1 = 47 pFC2 = 2.2 pFC3 = 82 pFL2 = 22 nHL3 = 8.2 nH

Figure 3-14. Input Return Loss at L1 = 4.7 nH vs. Frequency for µPC8226TK

1.575 2.475 0.475

20

10

0


C2 = 0.3 pF

C2 = 2.2 pF

1.575 2.475 0.475

20

10

0


C2 = 0.3 pF

C2 = 2.2 pF

Inpu

t Ret

urn

Loss

RLi

n (d

B)

Frequency f (GHz)

Inpu

t Ret

urn

Loss

RLi

n (d

B)

Frequency f (GHz)


(3) Frequency Characteristics of Output Return Loss

Figure 3-15 (µPC8211TK) and Figure 3-16 (µPC8226TK) show the frequency characteristics of the output return

loss (RLout) in accordance with changes in the value of the output parallel inductor (L2), while Figure 3-17

(µPC8211TK) and Figure 3-18 (µPC8226TK) show the frequency characteristics of the output return loss (RLout) in

accordance with changes in the value of the output series inductor (L3).

The resonance center frequency is tuned to closely match the target frequency of 1.575 GHz through optimization

of the input series inductor (Figures 3-11 through 3-14). Thus, for L2 and L3, a value should be selected such that 10

dB or more can be obtained for RLout. Also, contribution to the noise figure (NF) should also be considered when

making a selection for L2 and L3 (Figures 3-5 through 3-8).

For L2, due to limits imposed by the commercially available line-up of inductors (for example, the next value after

18 nH being 22 nH), the best value out of those available should be selected. In this case, 22 nH should be selected

for both the µPC8211TK and the µPC8226TK. Similarly, for L3, due to limits imposed by the commercially available

line-up of inductors (for example, the next value after 8.2 nH being 10 nH), 10 nH should be selected for the

µPC8211TK, and 8.2 nH should be selected for the µPC8226TK.

Figure 3-15. Output Return Loss with Output Parallel Inductor vs. Frequency for µPC8211TK

L2 = 18 nH

L2 = 22 nH

L2 = 33 nH

1.575 2.475 0.475

40

20

0

VCC = VPS = 3.0 VC1 = 47 pFC2 = 1.3 pFC3 = 82 pFL1 = 4.7 nHL3 = 10 nH

L2 = 18 nH

L2 = 22 nH

L2 = 33 nH

1.575 2.475 0.475

40

20

0


Figure 3-16. Output Return Loss with Output Parallel Inductor vs. Frequency for µPC8226TK

L2 = 27 nH

L2 = 18 nH

L2 = 22 nH

1.575 2.475 0.475

40

20

0

VCC = VPS = 3.0 VC1 = 47 pFC2 = 0.5 pFC3 = 82 pFL1 = 5.6 nHL3 = 8.2 nH

L2 = 27 nH

L2 = 18 nH

L2 = 22 nH

1.575 2.475 0.475

40

20

0

VCC = VPS = 3.0 VC1 = 47 pFC2 = 0.5 pFC3 = 82 pFL1 = 5.6 nHL3 = 8.2 nH

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)


Figure 3-17. Output Return Loss with Output Series Inductor vs. Frequency for µPC8211TK

1.575 2.475 0.475

50

25

0


L3 = 10 nH

L3 = 8.2 nH

L3 = 6.8 nH

1.575 2.475 0.475

50

25

0


L3 = 10 nH

L3 = 8.2 nH

L3 = 6.8 nH

Figure 3-18. Output Return Loss with Output Series Inductor vs. Frequency for µPC8226TK

L3 = 8.2 nH

L3 = 10 nH

1.575 2.475 0.475

50

25

0


L3 = 8.2 nH

L3 = 10 nH

1.575 2.475 0.475

50

25

0


Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)


3. 1. 3 Main Electrical Characteristics

Table 3-1 shows the main related electrical characteristics for the µPC8211TK and µPC8226TK.

The output series capacitor (C3) is a DC cut capacitor. When applied with a frequency in the vicinity of 1.575 GHz,

if a value of approximately 100 pF is selected, then the effect on the main high-frequency characteristics is negligible.

Also, the value for the parallel resistor (R1) is tuned to match the internal circuit constant of the MMIC.

Table 3-1. Main Electrical Characteristics for µPC8211TK and µPC8226TK

(TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, VPS = 3.0 V, unless otherwise specified)

Value Parameter Symbol Conditions

µPC8211TK µPC8226TK

Unit

Circuit Current ICC No Signal 3.7 3.1 mA

Noise Figure NF 0.90 1.07 1.69 1.12 1.14 1.73 dB

Power Gain GP Pin = −30 dBm 18.0 18.8 19.4 17.5 17.7 18.5 dB

Gain 1 dB Compression

Output Power

PO (1 dB) −3.8 −5.5 dBm

Output Power PO Pin = −10 dBm +2.5 +1.2 dBm

Input 3rd Order Distortion

Intercept Point

IIP3 −13.0 −12.0 dBm

Output 3rd Order Distortion

Intercept Point

OIP3 +6.0 +6.0 dBm

Input Return Loss RLin Pin = −30 dBm 5.1 7.0 15.0 6.4 7.0 15.3 dB

Output Return Loss RLout Pin = −10 dBm 16.7 17.4 18.5 15.0 14.1 13.7 dB

Isolation ISL Pin = −10 dBm 34.1 33.4 32.6 37.7 37.5 36.7 dB

C1 47 47 pF

C2 0.5 1.3 2.5 0.3 0.5 2.2 pF

C3 82 82 pF

L1 4.7 5.6 nH

L2 22 22 nH

L3 10 8.2 nH

Main Components

R1 750 750 Ω

3. 2 µPC8215TU (for use in PDAs)

The µPC8215TU has a gain best suited for use in PDAs (GP = 28 dB), and also has low noise characteristics (NF =

1.1 dB).

This section describes a usage example wherein the µPC8215TU is applied in a product implementing a 1.575

GHz GPS LNA.

An evaluation circuit for a 1.575 GHz GPS LNA that includes the µPC8215TU was shown previously in Figure 2-2.

3. 2. 1 Noise Figure and Input-Output Return Loss at 1.575 GHz

Figure 3-19 shows the characteristics for the input series capacitor (C1) and the noise figure (NF), and the input-

output return loss (RLin and RLout), at 1.575 GHz.

Figure 3-20 shows the characteristics for the input series inductor (L1) and the noise figure (NF), and the input-

output return loss (RLin and RLout), at 1.575 GHz.


C1 serves as a DC cut capacitor, but is also closely tied to the noise figure (NF).

In Figure 3-19, it can be seen that NF worsens when the value of C1 is approximately 40 pF or less, but when the

value of C1 is approximately 40 pF or more, NF, RLin and RLout maintain constant values. Thus, 47 pF should be

selected as the value of C1.

The output series capacitor (C3) is also a DC cut capacitor. When applied with a frequency in the vicinity of 1.575

GHz, if a value of approximately 100 pF is selected, then the effect on the main electrical characteristics is negligible.

The input series inductor (L1) is closely tied to NF. As shown in Figure 3-20, 2.7 nH should be selected in order to

optimize NF.

Table 2-1, shown previously, describes the main electrical characteristics of the µPC8215TU.

Figure 3-19. Input Series Capacitor vs. Noise Figure and Input-Output Return Loss for µPC8215TU

0.9

1.0

1.1

1.2

1.3

1.4

0 10 20 30 40 50 60 70 80 90 100 110

0

5

10

15

20

25

C1 = 47 pF

RLout

NF

RLin VCC = 3.0 V

f = 1.575 GHz

C3 = 100 pF

L1 = 2.7 nH


Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

R

Lin/

RLo

ut (

dB)

Figure 3-20. Input Series Inductor vs. Noise Figure and Input-Output Return Loss for µPC8215TU

0.9

1.0

1.1

1.2

1.3

1.4

1.5 2 2.5 3 3.5 4 4.5

0

5

10

15

20

25

L1 = 2.7 nH

RLout

NF

RLin VCC = 3.0 V

f = 1.575 GHz

C1 = 47 pF

C3 = 100 pF

Input Series Inductor L1 (nH)

Noi

se F

igur

e N

F (

dB)

Inpu

t-O

utpu

t Ret

urn

Loss

R

Lin/

RLo

ut (

dB)


3. 2. 2 Frequency Characteristics of Noise Figure

Figure 3-21 shows the frequency characteristics of the noise figure (NF) and the NF associated gain (Ga).

Figure 3-21. Noise Figure and NF Associated Gain vs. Frequency for µPC8215TU

0.9

1.0

1.1

1.2

1.3

1.4

1540 1550 1560 1570 1580 1590 1600 1610

10

15

20

25

30

35

f = 1.575 MHz

NF

VCC = 3.0 V

C1 = 47 pF

C3 = 100 pF

L1 = 2.7 nH

Frequency f (MHz)

Noi

se F

igur

e N

F (

dB)

NF

Ass

ocia

ted

Gai

n G

a (d

B)

Ga


3. 3 Measurement Circuit Configuration

3. 3. 1 NF Measurement Circuit Configuration

Figure 3-22 shows the NF measurement circuit configuration.

Figure 3-22. NF Measurement Circuit

EC-µPC8211TKor

EC-µPC8226TKor

EC-µPC8215TU

HP346C (APC3.5connector type)

HP8970B

DC Voltage Current Source: Advantest TR6143

Noise SourceNF

MeasurementCircuit

RF-IN RF-OUTEC-µPC8211TKor

EC-µPC8226TKor

EC-µPC8215TU

HP346C (APC3.5connector type)

HP8970B

DC Voltage Current Source: Advantest TR6143

Noise SourceNF

MeasurementCircuit

RF-IN RF-OUT

3. 3. 2 S-Parameter Measurement Circuit Configuration

Figure 3-23 shows the S-parameter measurement circuit configuration.

Figure 3-23. S-Parameter Measurement Circuit

HP8719D

NetworkAnalyzer


EC-µPC8226TKor

EC-µPC8215TUDC Voltage Current Source: Advantest TR6143

HP8719D

NetworkAnalyzer


EC-µPC8226TKor

EC-µPC8215TUDC Voltage Current Source: Advantest TR6143


4. BOARD ASSEMBLY & STANDARD ELECTRICAL CHARACTERISTICS

This section describes boards and components used to build evaluation boards using the µPC8211TK,

µPC8226TK, and the µPC8215TU for the LNAs of GPS systems at 1.575 GHz. Information on component

implementation examples is also provided. The standard electrical characteristics for each evaluation board are also

given.

4. 1 Product Information

4. 1. 1 Ordering Information

Table 4-1. Ordering Information

Part Number Order Number Package Marking Supplying Form

µPC8211TK-E2 µPC8211TK-E2-A 6G

µPC8226TK-E2 µPC8226TK-E2-A

6-pin lead-less minimold

(1511 PKG) (Pb-Free) Note

6H

• Embossed tape, 8 mm wide

• Pins 1, 6 face the perforation side of the tape

• Qty 5 kpcs/reel

µPC8215TU-E2 µPC8215TU-E2-A 8-pin lead-less minimold

(Pb-Free) Note

8215 • Embossed tape, 8 mm wide

• Pins 5, 6, 7, 8 indicate pull-out direction of tape

• Qty 5 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.


4. 1. 2 Pin Connections

The µPC8211TK and the µPC8226TK are implemented in a 6-pin lead-less minimold package, and the pin

connections are the same for both. However, the markings differ for the two. The µPC8211TK has a marking that

reads “6G”, while the µPC8226TK has a marking that reads “6H”.

The µPC8215TU is implemented in an 8-pin lead-less minimold package, and has a marking that reads “8215”.

Figure 4-1. µPC8211TK

Pin No. Pin Name

1 INPUT

2 GND

3 PS

4 OUTPUT

5 GND

6

5

4

(Bottom View)

1

2

3

1

2

3

(Top View)

6

5

4

6G

6 VCC

Figure 4-2. µPC8226TK

Pin No. Pin Name

1 INPUT

2 GND

3 PS

4 OUTPUT

5 GND

6

5

4

(Bottom View)

1

2

3

1

2

3

(Top View)

6

5

46H

6 VCC

Figure 4-3. µPC8215TU

Pin No. Pin Name

1 GND

2 INPUT

3 GND

4 GND

5 VCC

6 GND

7 OUTPUT

1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5

8215

(Bottom View)(Top View)

8 GND


4. 1. 3 Internal Block Diagram

Figure 4-4. Internal Block Diagram

(1) µPC8211TK and µPC8226TK (2) µPC8215TU

Includes a power-save function. Configured as a 2-stage amplifier.

5

6

7

8

4

3

2

1GND

INPUT

GND

GND

GND

OUTPUT

GND

VCC

INPUT 1

Bias

2

3

GND

PS

VCC6

5

4

GND

OUTPUT


4. 2 Evaluation Board for a 1.575 GHz GPS LNA with µPC8211TK

4. 2. 1 Evaluation Board Pattern Layout

Photo 4-1. Board Pattern Layout for µPC8211TK

Magnified


Figure 4-5. Pattern Layout

SIZE 16.36 mm × 21.46 mm

MATERIAL FR4 (ELC4756UV/Sumitomo), double side copper-clad,

t = 0.2 mm (total: t = 1.0 mm), εr = 4.6, Au flash plated on pattern

PC TERMINAL A2-2PA-2.54DSA (HIROSE)

RF CONNECTOR WK72475 (WAKA)

THROUGH HOLES

Table 4-2. Components of Test Circuit for Measuring Electrical Characteristics

Symbol Form Rating Part Number Maker

C1 Chip Capacitor 47 pF GRM1552C1H470JZ01 Murata

C2 Chip Capacitor 1.3 pF GRM1554C1H1R3CZ01 Murata


C4, C5 Chip Capacitor 1 000 pF GRM1552C1H102JA01 Murata

R1 Chip Resistor 750 Ω RR-0510P-751D Susumu

L1 Chip Inductor 4.7 nH AML1005H4N7ST FDK

L2 Chip Inductor 22 nH AML1005H22NST FDK



4. 2. 2 Standard Electrical Characteristics

Main Standard Electrical Characteristics for Reference

(TA = +25°C, VCC = 3.0 V, VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified)

ICC: 3.7 mA IIP3: −13 dBm

NF: 1.07 dB RLin: 7.0 dB

GP: 18.8 dB RLout: 17.4 dB

PO (1 dB): −3.8 dBm ISL: 33.4 dB

PO: +2.5 dBm @Pin = −10 dBm

Figure 4-6. Evaluation Circuit

61

2

3

5

4VPS

IN

OUT

VCC

C1

C2

C4

L1C5

R1 L2

L3 C382 pF

4.7 nH

1.3 pF

47 pF

10 nH1 000 pF

1 000 pF

750 Ω 22 nH

High: ONLow: OFF (Power-Save)


Figure 4-7. Gain and Isolation

Pow

er G

ain

GP (

dB)

Isol

atio

n IS

L (d

B)

Frequency f (GHz)


Figure 4-8. Input and Output Return Loss

Inpu

t Ret

urn

Loss

RLi

n (d

B)

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)


Figure 4-9. S-Parameter

S11

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)

S22

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)


Figure 4-10. Input 3rd Order Distortion Intercept Point

2tone Pout vs. P in (EC-µ PC8211TK_0.2FR4)

-80

-70

-60

-50

-40

-30

-20

-10

0

10

-45 -40 -35 -30 -25 -20 -15 -10 -5 0

Pin /tone (dBm)

Pou

t /to

ne (

dBm

)

IIP3 = −13 dBm

Pout _RF

Pout _IM3

HP8562AfRF1 = 1 575.5 MHzfRF2 = 1 575.6 MHzfIM3L = 1 575.4 MHzfIM3H = 1 575.7 MHzSpan 1 MHzATT autoRBW 30 KHzVBW 10 KHzSWP 50 mSRef level 0 dBm

OUTPUT POWER vs. INPUT POWERO

utpu

t Pow

er/T

one

Pou

t (dB

m)

Input Power/Tone Pin (dBm)

Figure 4-11. Gain 1 dB Compression Output Power

Pout vs. Pin (EC-µ PC8211TK_0.2FR4)

-25

-20

-15

-10

-5

0

5

10

-45 -40 -35 -30 -25 -20 -15 -10 -5 0 5

Pin (dBm)

Pou

t (dB

m)

PO = +2.5 dBm @Pin = −10 dBm

PO (1 dB) = −3.8 dBm

VCC = 3.0 VICC = 3.6 mAFrequency 1 575 MHzHP483A POWER METERHP8665A GENERATOR

Pout

PO (1 dB)

OUTPUT POWER vs. INPUT POWER

Out

put P

ower

P

out (

dBm

)

Input Power Pin (dBm)


4. 3 Evaluation Board for a 1.575 GHz GPS LNA with µPC8226TK


Photo 4-2. Board Pattern Layout for µPC8226TK

Magnified



SIZE 16.36 mm × 21.46 mm


t = 0.2 mm (total: t = 1.0 mm), εr = 4.6, Au flash plated on pattern



THROUGH HOLES




C2 Chip Capacitor 0.5 pF GRM1554C1H0R5CZ01 Murata


C4, C5 Chip Capacitor 1 000 pF GRM1552C1H102JA01 Murata

R1 Chip Resistor 750 Ω RR-0510P-751D Susumu







(TA = +25°C, VCC = 3.0 V, VPS = 3.0 V, fin = 1 575 MHz, unless otherwise specified)

ICC: 3.1 mA IIP3: −12 dBm



PO (1 dB): −5.5 dBm ISL: 37.5 dB

PO: +1.2 dBm @Pin = −10 dBm


61

2

3

5

4VPS

IN

OUT

VCC

C1

C2

C4

L1C5

R1 L2

L3 C382 pF

5.6 nH

0.5 pF

47 pF

8.2 nH1 000 pF

1 000 pF

750 Ω 22 nH

High: ONLow: OFF (Power-Save)



Pow

er G

ain

GP (

dB)

Isol

atio

n IS

L (d

B)

Frequency f (GHz)



Inpu

t Ret

urn

Loss

RLi

n (d

B)

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)



S11

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)

S22

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)


Figure 4-17. Input 3rd Order Distortion Intercept Point

2tone Pout vs. Pin (EC-µ PC8226TK_0.2FR4)

-80

-70

-60

-50

-40

-30

-20

-10

0

10

-50 -40 -30 -20 -10 0

Pin /tone (dBm)

Pou

t /to

ne (

dBm

)

IIP3 = −12 dBm

Pout _RF

Pout _IM3



utpu

t Pow

er/T

one

Pou

t (dB

m)



-25

-20

-15

-10

-5

0

5

10

-45 -40 -35 -30 -25 -20 -15 -10 -5 0 5

PO = +1.2 dBm@Pin = −10 dBm

PO (1 dB) = −5.5 dBm


PO (1 dB)

Pout


Out

put P

ower

P

out (

dBm

)



4. 4 Evaluation Board for a 1.575 GHz GPS LNA with µPC8215TU


Photo 4-3. Board Pattern Layout for µPC8215TU

Magnified



SIZE 18.7 mm × 28 mm


t = 0.4 mm, εr = 4.6, Au flash plated on pattern



THROUGH HOLES





C5 Chip Capacitor 1 000 pF GRM1552C1H102JA01 Murata





(TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, unless otherwise specified)

ICC: 12.0 mA OIP3: +13 dBm



PO (1 dB): +7.6 dBm ISL: 45.6 dB


VCC

INPUT

5

6

7

8

4

2

1

3

OUTPUT

C1 L1

C51 000 pF

C347 pF 2.7 nH 100 pF



Pow

er G

ain

GP (

dB)

Isol

atio

n IS

L (d

B)

Frequency f (GHz)



Inpu

t Ret

urn

Loss

RLi

n (d

B)

Out

put R

etur

n Lo

ss R

Lout (

dB)

Frequency f (GHz)



S11

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)

S22

Start 0.1 GHz

Stop 3.0 GHz

(measured at

connector on

application

board)


Figure 4-24. Output 3rd Order Distortion Intercept Point

2tone Pout vs. P in (EC-µ PC8215TU_0.2FR4)

-60

-50

-40

-30

-20

-10

0

10

20

-50 -40 -30 -20 -10 0

Pin /tone (dBm)

Pou

t /to

ne (

dBm

)

OIP3 = 13 dBm

Pout_RF

Pout _IM3



utpu

t Pow

er/T

one

Pou

t (dB

m)


OIP3 = ＋13 dBm


Pout vs. Pin (EC-µ PC8215TU_0.2FR4)

-20

-15

-10

-5

0

5

10

-45 -40 -35 -30 -25 -20 -15 -10 -5 0Pin (dBm)

Pou

t (dB

m)

PO (1 dB) = +7.6 dBm


Pout

PO (1 dB)


Out

put P

ower

P

out (

dBm

)


NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office

TEL: +852-3107-7303TEL: +886-2-8712-0478TEL: +82-2-558-2120

FAX: +852-3107-7309 FAX: +886-2-2545-3859FAX: +82-2-558-5209

NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327

California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579

For further information, please contact

Documents

APPLICATION FOR 1.575 GHz GPS WITH - CEL · APPLICATION FOR 1.575 GHz GPS WITH ... Unit Circuit Current ICC No Signal 3.7 3.1 12 mA Noise Figure NF 1.07 1.14 1.08 dB Power