Amorphous Silicon Technology—1993assets.cambridge.org/97811074/09545/frontmatter/9781107409545... · and Peter G. LeComber Frontmatter More information. INHOMOGENEITY IN THE NETWORK

Amorphous Silicon Technology—1993

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Cambridge University Press978-1-107-40954-5 - Materials Research Society Symposium Proceedings: Volume 297:Amorphous Silicon Technology—1993Editors: Eric A. Schiff, Malcolm J. Thompson, Arun Madan, Kazunobu Tanakaand Peter G. LeComberFrontmatterMore information

http://www.cambridge.org/9781107409545

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 297

Amorphous Silicon Technology—1993

Symposium held April 13-16, 1993, San Francisco, California, U.S.A.

EDITORS:

Eric A. SchiffSyracuse University

Syracuse, New York, U.S.A.

Malcolm J. ThompsonXerox PARC

Palo Alto, California, U.S.A.

Arun MadanMV Systems, Inc.

Golden, Colorado, U.S.A.

Kazunobu TanakaElectrotechnical Laboratory

Tsukuba, Japan

Peter G. LeComberUniversity of Dundee

Dundee, United Kingdom

MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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© Materials Research Society 1993

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Contents

PREFACE

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

PART I: GROWTH AND MODIFICATION

* MEASUREMENTS OF SiH3 AND SiH2 RADICAL DENSITIES IN RFSILANE PLASMAS USING LASER SPECTROSCOPIC TECHNIQUES

T. Goto 3

CLUSTERS IN A SILANE GLOW DISCHARGE: MECHANISM OFTHEIR FORMATION AND HOW TO AVOID THEM

S. Vepfek, O. Ambacher, W. Rieger, K. Schopper andM.G.J. Vepfek-Heijman 13

IN SITU ELLIPSOMETRIC OBSERVATION OF THE GROWTH OFCRYSTALLINE SILICON FROM FLUORINATED PRECURSORS

T. Akasaka, Y. Araki and I. Shimizu 19

ELLIPSOMETRY STUDIES OF (/xc-Si:H/ZnO) AND O*c-Si:H/a-Si:H)INTERFACES IN MAGNETRON SPUTTERING SYSTEM

Y.H. Yang, M. Katiyar, J.R. Abelson and N. Maley 25

EFFECT OF GAS PHASE HYDROGEN-DILUTION ON THENUCLEATION, GROWTH, AND INTERFACES OF a-Sij XCX:H

Y. Lu, I. An, M. Gunes, M. Wakagi, C.R. Wronski and R.W. Collins 31

DEPLETION FRACTION OF SILANE AND DOMINANT NEUTRALRADICAL IN RF GLOW DISCHARGE IN SILANE

Q. Lin, X. Lin, Z. Xu, Y. Yu and S. Peng 37

SUB-SURFACE EQUILIBRATION OF HYDROGEN WITH THEa-Si:H NETWORK UNDER FILM GROWTH CONDITIONS

I. An, Y.M. Li, C.R. Wronski and R.W. Collins 43

MECHANISM OF HIGH RATE a-Si:H DEPOSITION IN A VHF PLASMAM. Heintze, R. Zedlitz and G.H. Bauer 49

AN APPROACH TO HIGH QUALITY a-Ge:H BY VHF DEPOSITIONR. Zedlitz, M. Heintze and G.H. Bauer 55

Invited Paper






EFFECTS OF ELECTRODE SPACING AND HYDROGEN DILUTIONON a-SiC:H AND a-Si:H LAYERS

J. Daey Ouwens, R.E.I. Schropp, C.H.M. van der Werf,M.B. von der Linden, C.H.M. Maree, W.F. van der Weg, P. Rava,F. Demichelis, C.F. Pirri and E. Tresso 61

BANDGAP ENGINEERING IN HYDROGENATED SILICON FILMSMADE BY COMBINED HYDROGEN DILUTION AND ATOMICHYDROGEN TREATMENTS

K.C. Hsu and H.L. Hwang 67

OPTOELECTRONIC PROPERTIES OF a-Si:H FILMS DEPOSITEDFROM He-DILUTED SILANE

C. Swiatkowski, P. Roca i Cabarrocas and M. Kunst 73

* FABRICATION OF HIGH QUALITY POLY-Si FROM FLUORINATEDPRECURSORS

S. Ishihara, D. He, T. Akasaka, Y. Araki and I. Shimizu 79

REDUCTION OF THE DEFECT DENSITY IN a-Si:H DEPOSITED AT< 250°C

H. Nishio, G. Ganguly and A. Matsuda 91

ELECTRON TRANSPORT AND CONDUCTION-BAND-TAIL STATESIN a-Si:H DEPOSITED WITH A REMOTE HYDROGEN PLASMA

C.E. Nebel, R.A. Street, N.M. Johnson and J. Walker 97

AN EXAMINATION OF H EFFUSION IN a-Si:H USING INFRAREDSPECTROSCOPY

A.H. Mahan, E.J. Johnson and J.D. Webb 103

* LOW-TEMPERATURE CHEMICAL-VAPOR DEPOSITION OFAMORPHOUS SEMICONDUCTORS AND INSULATORS

M. Matsumura and O. Sugiura 109

LOW FILAMENT TEMPERATURE DEPOSITION OF a-Si:H BYCATALYTIC CHEMICAL VAPOR DEPOSITION

P. Brogueira, S. Grebner, F. Wang, R. Schwarz, V. Chu andJ.P. Conde 121

SEPARATING THE CONTRIBUTIONS OF HYDROGEN ANDSTRUCTURAL RELAXATION TO DAMAGE ANNEALING IN a-Si:H

P.A. Stolk, A.J.M. Berntsen, F.W. Saris and W.F. van der Weg 127

HYDROGEN CONTENT OF a-Si:H AND a-Si:H,F AS A FUNCTIONOF CHEMICAL ANNEALING

J.N. Bullock, K. Rim and S. Wagner 133

PIEZOELECTRIC EFFECT ON PLASMA CHEMICAL VAPORDEPOSITION OF HYDROGENATED AMORPHOUS SILICON FILMS

M. Kawasaki, M. Sumiya and H. Koinuma 139

* Invited Paper






HIGH SUBSTRATE TEMPERATURE a-Si:H GROWN BY DCREACTIVE MAGNETRON SPUTTERING

Y.H. Liang, N. Maley and J.R. Abelson 145

LASER DEHYDROGENATION OF PECVD AMORPHOUS SILICONP. Mei, J.B. Boyce, M. Hack, R.A. Lujan, R.I. Johnson,G.B. Anderson, D.K. Fork, S.E. Ready and D.L. Smith 151

PART II: STRUCTURE AND DEFECTS

* FIRST PRINCIPLES MOLECULAR DYNAMICS STUDIES OFa-SiAND a-Si:H

P.A. Fedders 159

ELECTRONIC STRUCTURE AND DYNAMICS OF DEFECT INa-Si:H BY AB-INITIO MOLECULAR DYNAMICS

N. Orita, T. Sasaki and H. Katayama-Yoshida 171

EFFECTS OF STRUCTURAL DISORDER ON THE ELECTRONICPROPERTIES OF SILICON: TIGHT-BINDING CALCULATIONS OFGRAIN BOUNDARIES

M. Kohyama and R. Yamamoto 177

* DEFECT RELAXATION DYNAMICS IN AMORPHOUS SILICONJ.D. Cohen, T.M. Leen, F. Zhong and R.J. Rasmussen 183

EVIDENCE FOR DIFFERENT KINDS OF DANGLING BONDDEFECTS IN a-Si:H

M. Tran, H. Fritzsche and P. Stradins 195

ARE THERE CHARGED DANGLING BONDS IN DEVICE QUALITYAMORPHOUS SILICON?

M.S. Brandt, A. Asano and M. Stutzmann 201

SIGNATURE OF THE WEAK BOND-DANGLING BONDCONVERSION PROCESS IN a-Si:H AS SEEN BY TOTALPHOTOELECTRON YIELD SPECTROSCOPY

W. Graf, K. Leihkamm, J. Ristein and L. Ley 207

ELECTRON SPIN RESONANCE STUDY OF THE DANGLING BONDIN a-Si:H AND POROUS SILICON

T.J. McMahon and Y. Xiao 213

PHOTOLUMINESCENCE AND LIGHT-INDUCED ESR IN a-Si:HSTUDIED WITH SUBGAP EXCITATION

R. Saleh, I. Ulber and W. Fuhs 219

STRUCTURE AND STABILITY OF MICROVOIDS IN a-Si:HR. Biswas and I. Kwon 225

Invited Paper






INVESTIGATION ON MICROVOIDS IN PECVD a-Si:HC. Manfredotti, F. Fizzotti, M. Boero, P. Pastorino, E. Vittone andV. Rigato 231

STRUCTURAL EQUILIBRATION IN PURE AND HYDROGENATEDAMORPHOUS SILICON

G. Muller and G. Krotz 237

AMPLITUDE DEPENDENCE OF METASTABLE DEFECTFORMATION

W.B. Jackson, C. Nebel and R.A. Street 249

DEPENDENCE OF THERMALLY INDUCED METASTABILITYON HYDROGEN CONTENT IN AMORPHOUS SILICON

S.M. Pietruszko 255

THE EFFECT OF POST-DEUTERATION ON METASTABILITY INa-Si:H

N.H. Nickel, W.B. Jackson and C.C. Tsai 261

HYDROGEN DYNAMICS IN a-Si:HP.V. Santos 267

HYDROGEN DIFFUSION MECHANISM IN AMORPHOUS SILICONFROM D TRACER DIFFUSION: THEORY AND EXPERIMENT

H.M. Branz, S. Asher, B.P. Nelson and M. Kemp 279

HYDROGEN AND LITHIUM DIFFUSION IN AMORPHOUS SILICONW. Beyer and U. Zastrow 285

DIFFUSION OF HYDROGEN IN AMORPHOUS SILICON IN THELOW CONCENTRATION REGIME

J.A. Roth, G.L. Olson, D.C. Jacobson and J.M. Poate 291

DOPING DEPENDENCE OF LOCAL HYDROGEN MOTION INHYDROGENATED AMORPHOUS SILICON

P. Hari, P.C. Taylor and R.A. Street 297

ANNEALING OF ION-IMPLANTED HYDROGENATEDAMORPHOUS SILICON: STABLE AND REMOVABLE DAMAGE

A.J.M. Berntsen, P.A. Stolk, W.F. van der Weg and F.W. Saris 303

1/f NOISE MEASUREMENTS OF INTERACTING CURRENTFILAMENTS IN HYDROGENATED AMORPHOUS SILICON

C.E. Parman, N.E. Israeloff, J. Fan and J. Kakalios 309

CARRIER INJECTION IN a-Si:H P-I-N DEVICES: HYDROGENREDISTRIBUTION AND DEFECT CREATION

J.M. Asensi, J. Andreu, J. Puigdollers, J. Bertomeu andJ.C. Delgado 315

* Invited Paper

Vlll






INHOMOGENEITY IN THE NETWORK ORDER OF DEVICEQUALITY a-Si:H

G. Morell, R.S. Katiyar, S.Z. Weisz, M. Gomez and I. Balberg 321

DEFECT RELAXATION IN a-Si:H STUDIED BY DEFECTABSORPTION AND LUMINESCENCE

D. Han and Y. Xiao 327

ODESR STUDIES OF a-Si:H WITH SUBGAP EXCITATIOND. Mao, S.Q. Gu and P.C. Taylor 333

A NEW PDS STUDY ON PECVD a-Si:HC. Manfredotti, F. Fizzotti, M. Boero, E. Vittone, G. Amato andL. Boarino 339

ACCURATE RECONSTRUCTION OF THE DENSITY OF STATESIN a-Si:H BY PHOTOTHERMAL AND PHOTOCONDUCTIVESPECTRA

G. Amato, F. Giorgis and C. Manfredotti 345

STUDY OF a-Si:H USING THE SOLID/ELECTROLYTE SYSTEMY. Goldstein, A. Many, S.Z. Weisz, J. Penalbert, W. Munozand M. Gomez 351

ELECTROLUMINESCENCE AND TRANSPORT IN a-Si:H p-i-nDIODES AT ROOM TEMPERATURE

R. Carius, F. Becker, H. Wagner and J.-Th. Zettler 357

EFFECTIVE DENSITIES OF STATES IN CONDUCTION ANDVALENCE BANDS IN a-Si

J. Furlan, F. Smole and P. Popovid 363

IMPURITY CONTENT AND DEFECT DENSITY IN 42 a-Si:H FILMSM. Nakata, S. Wagner, C.W. Magee, T.M. Peterson and H.-R. Park 369

EFFECT OF C IMPURITIES IN a-Si:H AS MEASURED BY DRIVE-LEVEL CAPACITANCE, PHOTOCURRENT, AND ELECTRONSPIN RESONANCE

J. Hautala, T. Unold and J.D. Cohen 375

STRUCTURAL NATURE OF NANOCRYSTALLINE SILICONW. Han, G. Han, J. Qiao, P. Du, Z. Ding, J. Xu and Z. Shen 381

PART III: OPTOELECTRONIC PROPERTIES

EFFECTS OF IN-DEPTH INHOMOGENEITIES ON THE OPTICALABSORPTION SPECTRA OF a-Si:H FILMS: THEORY ANDQUANTITATIVE EVALUATIONS

G. Amato, F. Giorgis and C. Manfredotti 389

IX






A QUASI-EXACT INVERTIBLE EQUATION FOR ABSORPTIONCOEFFICIENT FROM REFLECTANCE AND TRANSMITTANCEMEASUREMENTS

C. Summonte 395

IRREGULAR ELECTRON TRANSPORT THROUGH a-Si:H BASEDPOTENTIAL BARRIERS

N. Bernhard, B. Frank, B. Movaghar and G.H. Bauer 401

DETERMINATION OF DRIFT, EXTENDED STATE MOBILITYAND RECOMBINATION LIFETIME IN COMPENSATED a-Si:HBY PHOTOMIXING

Y. Tang, R. Braunstein, B. von Roedern and F.R. Shapiro 407

NUMERICAL SIMULATION AND EXPERIMENTAL INVESTIGATIONOF THE TIME-OF-FLIGHT TECHNIQUE APPLIED TO a-Si:H/a-SiGe:H-HETEROJUNCTIONS

R. Briiggemann, N. Bernhard, C. Main and G.H. Bauer 413

ELECTRON TIME-OF-FLIGHT MEASUREMENTS IN a-Si^C^HQ. Wang, E.A. Schiff and Y.-M. Li 419

HIGH FIELD ELECTRON DRIFT IN a-Si:HQ. Gu, E.A. Schiff, J.B. Chevrier and B. Equer 425

UNDOPED AND PHOSPHORUS DOPED /x-SiC:H FILMS:INVESTIGATION OF ELECTRICAL PROPERTIES AND HALLEFFECT

T. Pisarkiewicz, T. Stapinski, F. Demichelis, C.F. Pirri, E. Tressoand P. Rava 431

REVEALING MYSTERIES OF HALL EXPERIMENTS ON a-Si:HAND a-SiC:H

C.E. Nebel and R.A. Street 437

* PHOTOCARRIER TRANSPORT AND RECOMBINATION INAMORPHOUS SILICON

C.R. Wronski, R.M. Dawson, M. Gunes, Y.M. Li andR.W. Collins 443

RECOMBINATION PROCESS IN THE AS-DEPOSITED STATE OFHYDROGENATED AMORPHOUS SILICON

J.-H. Yoon 455

RECOMBINATION OF EXCESS CARRIERS AT HIGH EXCITATIONDENSITY IN AMORPHOUS SILICON

M. Kunst, C. Haffer and C. Swiatkowski 461

MONTE-CARLO SIMULATION OF ENERGY RELAXATION OFINTERACTING CARRIERS IN a-Si:H UNDER ARBITRARYELECTRIC FIELDS

B. Cleve, R. Hess, S.D. Baranovskii and P. Thomas 467

* Invited Paper






DUAL-BEAM PHOTOCURRENT SPECTRA IN UNDOPED a-Si:HJ.Z. Liu, G. Lewen, J.P. Conde and P. Roci i Cabarrocas 473

THE /XT PROBLEM: NEW RESULTS ON MICRO-DOPED a-Si:HFILMS

N. Beck, N. Wyrsch, E. Sauvain and A. Shah 479

CORRELATION BETWEEN MINORITY CARRIER DIFFUSIONLENGTH AND MICROSTRUCTURE IN a-Si:H THIN FILMS

G. Conte, G. Fameli, G. Nobile, A. Rubino, E. Terzini, F. Villani,D. Caputo, G. de Cesare, F. Irrera, F. Palma and M.C. Rossi 485

STEADY-STATE PHOTOCARRIER GRATING TECHNIQUEAPPLIED TO a-Si:H THIN FILM TRANSISTORS

F. Wang, M. Reissner, T. Fischer, S. Grebner and R. Schwarz 491

AMBIPOLAR DIFFUSION COEFFICIENTS IN a-SiC:H ALLOYS INSTEADY-STATE AND TRANSIENT GRATING MEASUREMENTS

H. Weinert, M. Petrauskas, J. Kolenda, A. Galeckas, F. Wang andR. Schwarz 497

DOPING EFFICIENCY OF n-TYPE a-Si:H DOPED WITH A LIQUIDORGANIC SOURCE

K. Gaughan, Z. Lin, J.M. Viner, P.C. Taylor and P.C. Mathur 503

PHYSICAL PROPERTIES OF P AND B DOPED MICROCRYSTALLINESi:H DEPOSITED BY PECVD

A. Rubino, M.L. Addonizio, G. Conte, G. Nobile, E. Terziniand A. Madan 509

STUDY ON STRUCTURAL, ELECTRICAL AND OPTICALPROPERTIES OF MICROCRYSTALLINE Si:H AND SiC:H FILMS

F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, A. Rubino,G. Nobile, E. Terzini and G. Conte 515

A SPECTROSCOPIC INVESTIGATION OF THE AMORPHOUSTO MICROCRYSTALLINE TRANSITION IN SILICON PREPAREDBY REACTIVE MAGNETRON SPUTTERING

W.A. Turner and G. Lucovsky 521

THERMODYNAMIC PREDICTIONS OF PHASE STABILITY ANDCRYSTALLIZATION TEMPERATURE OF SILICON-BASEDAMORPHOUS ALLOYS

J.R.A. Carlsson, X.-H. Li, S.F. Gong and H.T.G. Hentzell 527

CRITICAL LASER FLUENCE OBSERVED IN (111) TEXTURE,GRAIN SIZE AND MOBILITY OF LASER CRYSTALLIZEDAMORPHOUS SILICON

R.I. Johnson, G.B. Anderson, J.B. Boyce, D.K. Fork, P. Mei,S.E. Ready and S. Chen 533

XI






EXCIMER LASER AMORPHOUS SILICON FILMCRYSTALLIZATION: A STUDY OF TIME RESOLVEDREFLECTIVITY MEASUREMENTS

C. Summonte, M. Bianconi and D. Govoni 539

TEMPERATURE DEPENDENCE OF THE HALL MOBILITY INPOLYCRYSTALLINE SILICON

S.E. Ready, J.B. Boyce, D.K. Fork, P. Mei, G.B. Andersonand R.I. Johnson 545

PART IV: STABILITY

COMPARISON OF CURRENT AND LIGHT INDUCED DEFECTSIN a-Si:H

R.A. Street, W.B. Jackson and M. Hack 553

DEGRADATION OF AMORPHOUS SILICON BASED PHOTO-CONDUCTORS BY CORONA DISCHARGE

R.A.C.M.M. van Swaaij, W.P.M. Willems, J. Bezemer,H.J.P. Lokker and W.F. van der Weg 559

EFFECT OF DEPOSITION-INDUCED ANNEALABLE DEFECTSON LIGHT-INDUCED DEFECT GENERATION IN a-Si:H

J.-H. Yoon 565

CREATION OF STAEBLER-WRONSKI DEFECTS AT LOWTEMPERATURES

P. Stradins and H. Fritzsche 571

DEPENDENCE OF STEADY-STATE DEFECT DENSITY INHYDROGENATED AMORPHOUS SILICON ON CARRIERGENERATION RATE STUDIED OVER A WIDE RANGE

N. Hata, G. Ganguly and A. Matsuda 577

ON THE ROLE OF THE STAEBLER-WRONSKI SUSCEPTIBILITYIN HYDROGENATED AMORPHOUS SILICON

D. Caputo, G. De Cesare, F. Irrera, G. Masini, F. Palma,M.C. Rossi, G. Conte, G. Nobile and E. Terzini 583

ANNEALING THE DEFECTS IN a-Si:H UNDER ILLUMINATIONH. Gleskova, P.A. Morin and S. Wagner 589

DEPENDENCE OF a-Si:H DEGRADATION ON i-LAYERTHICKNESS AND PHOTON ENERGY

H. Paes, C. Achete and W. Losch 595

A COMPARATIVE STUDY OF DEFECT STATES IN LIGHT-SOAKED AND HIGH-TEMPERATURE-ANNEALED a-Si:H

Z.M. Saleh, H. Tarui, S. Tsuda, S. Nakano and Y. Kuwano 601

XII






THERMAL AND OPTICAL STRETCHED EXPONENTIALS INDEFECT KINETICS IN a-Si:H

D. Redfield and R. Bube 607

FAST DEGRADATION WITH PULSED LIGHT OF a-Si:H P-I-NPHOTODIODES

J. Puigdollers, J. Bertomeu, J.M. Asensi, J. Andreu andJ.C. Delgado 613

"FAST" AND "SLOW" METASTABLE DEFECTS IN a-Si:HL. Yang and L.-F. Chen 619

EFFECT OF LIGHT SOAKING ON THE SPECTRALLY ANDSPATIALLY RESOLVED COLLECTION EFFICIENCY OF a-Si:HSOLAR CELLS

M.B. von der Linden, R.E.I. Schropp, O.P. Lekkerkerker,J. Daey Ouwens and W.F. van der Weg 625

INTERNAL ELECTRIC FIELD IN LIGHT-DEGRADED p-i-n a-Si:HSOLAR CELLS

F. Smole, J. Furlan and M. Topifc 631

ROLE OF PHOTODEGRADATION ON THE \n PRODUCT ANDMICROSTRUCTURE OF THE a-Si:H PIN DEVICES

M. Vieira, E. Fortunato, G. Lavareda, C.N. Carvalho andR. Martins 637

ELECTRICALLY DETECTED MAGNETIC RESONANCE IN a-Si:HPIN CELLS

K. Lips and W. Fuhs 643

THERMAL ANNEALING RECOVERY AND SATURATION OFLIGHT-INDUCED DEGRADATION OF AMORPHOUS SILICONALLOY SOLAR CELLS WITH DIFFERENT MICROVOID DENSITY

X. Xu, J. Yang and S. Guha 649

RELAXATION OF ELECTRON BEAM-INDUCED METASTABLEDEFECTS IN a-Si:H

M. Grimbergen, R. McConville, D. Redfield and R.H. Bube 655

LIGHT INDUCED CHANGES IN THE NON-GAUSSIAN NOISESTATISTICS IN DOPED HYDROGENATED AMORPHOUS SILICON

J. Fan and J. Kakalios 661

TRAPPING DYNAMICS AND CHARGED DEFECTS: LIGHTINDUCED STUDIES IN a-Si:H AND a-Si^GeiH

J. Hautala and J.D. Cohen 667

xiii






PART V: ALLOYS AND MULTILAYERS

THE RELATION BETWEEN MICROSTRUCTURE AND ELECTRONICPROPERTIES OF MAGNETRON SPUTTERED a - S i ^ C ^ H

S.-Y. Yang, N. Maley and J.R. Abelson 675

OPTIMIZATION OF OPTOELECTRONIC PROPERTIES OF a-SiC:HFILMS

F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli,C. Summonte, F. Zignani, G. Amato, P. Rava and A. Madan 681

CARBON-RICH a-SiC:H ALLOYS AS DIELECTRIC MATERIALS:INJECTION MECHANISMS IN MIM-TYPE STRUCTURES

R. Vincenzoni, G. Masini, G. Leo, G. Guattari and F. Galluzzi 687

THE DENSITY OF STATES IN a-Si:C:H REVEALED BYELECTROPHOTOGRAPHY

R.A.C.M.M. van Swaaij, W.P.M. Willems, J. Bezemer,M.B. von der Linden and W.F. van der Weg 693

PARALLEL CONDUCTION IN a-SiiH/a-Si^C^H MULTILAYERSJ. Bertomeu, J. Puigdollers, J.M. Asensi, J.C. Delgado andJ. Andreu 699

CONDUCTION AND VALENCE BAND OFFSETS AT THEHYDROGENATED AMORPHOUS SILICON-CARBON/CRYSTALLINE SILICON INTERFACE VIA CAPACITANCETECHNIQUES

J.M. Essick, R.T. Mather, M.S. Bennett and J. Newton 705

ELECTRON MICROSCOPY STUDIES OF UNDOPED ANDPHOSPHORUS DOPED Si:H AND Si,C:H FILMS

Y.L. Chen, J. Bentley, C. Wang, G. Lucovsky and D.M. Maher 711

* DOPING AND ALLOYING OF HYDROGENATED AMORPHOUSGERMANIUM FILMS PREPARED BY DC-MAGNETRONSPUTTERING

T. Driisedau, A. Annen and B. Schroder 717

METASTABLE PHENOMENA IN THE THERMALLY ACTIVATEDCONDUCTIVITY OF HYDROGENATED AMORPHOUSGERMANIUM (a-Ge:H)

T. Driisedau, D. Pang, E. Sauvain, P. Wickboldt, E.Z. Liu,J.H. Chen and W. Paul 729

OBSERVATION OF DEEP DEFECT RELAXATION PROCESSES INHYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOY

F. Zhong and J.D. Cohen 735

* Invited Paper

XIV






PROTON AND DEUTERON DOUBLE RESONANCE STUDIES OFSTRUCTURAL DIFFERENCES BETWEEN AMORPHOUS Si ANDGe FILMS

P.H. Chan, P.A. Fedders, R.E. Norberg, W. Paul, D. Pang andP. Wickboldt 741

STRUCTURAL AND OPTICAL PROPERTIES OF THE THERMALLYSTABLE AMORPHOUS Sii_xBx ALLOY

J.R.A. Carlsson, X.-H. Li, S.F. Gong and H.T.G. Hentzell 747

THIN a-SiOxH ALLOY FILMS SHOWING VISIBLE LUMINESCENCEPREPARED BY DC-MAGNETRON SPUTTERING WITH WATERVAPOR AS OXYGEN SOURCE

M. Zacharias, B. Garke, A. Panckow, H. Freistedt and T. Driisedau 753

HYDROGENATED AMORPHOUS SILICON-NITROGEN, a-Si,N:HALLOYS: AN ALTERNATIVE TO a-Si,C:H FOR THE WIDE BANDGAP PHOTO-ACTIVE MATERIAL IN TANDEM PV CELLS

M.J. Williams, S.M. Cho and G. Lucovsky 759

PART VI: SOLAR CELLS

* IMPROVED AMORPHOUS SILICON SOLAR CELLS USING RPCVDK.C. Park, T.G. Kim, S.K. Kim, S.C. Kim, M.H. Hwang, J.M. Junand J. Jang 767

MATERIAL CONTROL FOR HIGH-EFFICIENCY AMORPHOUSSILICON SOLAR CELLS

Y. Hishikawa, M. Sasaki, S. Tsuge, S. Okamoto and S. Tsuda 779

MAJOR IMPROVEMENT OF INTRINSIC a-Si:H FILMS FOR SOLARCELL APPLICATIONS

J. Xi, T. Liu, M. Nugent, K. Si, V. Iafelice, J. Del Cueto, M. Ghoshand F. Kampas 785

SIMULATION OF a-Si PIN SOLAR CELLS WITH BUFFERH. Pfleiderer 791

DEFECT AND BAND GAP ENGINEERING OF AMORPHOUS SILICONSOLAR CELLS

R.E.I. Schropp, J. Daey Ouwens, M.B. von der Linden,C.H.M. van der Werf, W.F. van der Weg and P.F.A. Alkemade 797

* AMORPHOUS SILICON-CARBON ALLOYS FOR SOLAR CELLSY.-M. Li 803

CORRELATION OF SMALL-ANGLE X-RAY SCATTERING ANDSOLAR CELL PERFORMANCE OF a-SiGe:H ALLOYS

S.J. Jones, Y. Chen, D.L. Williamson, X. Xu, J. Yang and S. Guha 815

Invited Paper

xv






IMPROVEMENT IN PERFORMANCE OF a-SiGe:H SOLAR CELLS FORMULTI-JUNCTION CELLS

E. Maruyama, Y. Yoshimine, A. Terakawa, K. Sayama, K. Ninomiya,Y. Hishikawa, H. Tarui, S. Tsuda, S. Nakano and Y. Kuwano 821

MEASUREMENT AND MODELING OF a-Si,Ge:H SOLAR CELLPERFORMANCE AFTER HIGH-INTENSITY LIGHT SOAKING

K. Vasanth, M. Nakata, S. Wagner and M.S. Bennett 827

DESIGN AND FABRICATION OF GRADED BANDGAP SOLARCELLS IN AMORPHOUS Si AND ALLOYS

V.L. Dalai and G. Baldwin 833

THE SIMULATION OF a-Si:H JUNCTION CAPACITANCEMEASUREMENTS

F.R. Shapiro and A. Das 839

ENHANCED LIGHT ABSORPTION IN a-Si:H LAYERS OF SOLARCELLS BY APPLYING TCO/METAL BACK CONTACTS

G. Tao, B.S. Girwar, G.E.N. Landweer, M. Zeman andJ.W. Metselaar 845

MODELING OF a-Si:H SOLAR CELLS ON V-GROOVED GLASSSUBSTRATES

G. Tao, M. Zeman and J.W. Metselaar 851

THICKNESS DEPENDENCE OF ELECTROLUMINESCENCE IN a-Si:HP-I-N DEVICES

K. Wang, D. Han and M. Silver 857

PART VII: THIN FILM TRANSISTORS

TRANSIENT AND STRESS EFFECTS IN AMORPHOUS SILICONTHIN-FILM TRANSISTORS

M. Hack, R.L. Weisfield, M.F. Willums, G.H. Masterton andP.G. LeComber 865

IMPROVED ELECTRICAL PERFORMANCE OF a-Si:H THIN FILMTRANSISTORS, TFTs WITH n + fic-Si CONTACT, AND SILICON OXIDEAND NITRIDE DUAL-LAYER DIELECTRICS

S.S. He, D.J. Stephens and G. Lucovsky 871

A NEW THIN FILM TRANSISTOR STRUCTURE FOR INCREASINGSTORAGE CAPACITANCE IN THE PIXEL ELEMENT

B.H. Min, H.S. Choi, J.S. Park and M.K. Han 877

USE OF A FIELD EFFECT TRANSISTOR TO STUDYPHOTOTRANSPORT PROPERTIES OF a-Si:H

A.R. Grant, P.D. Persans, R.F. Kwasnick and G.E. Possin 883

XVI






SUBTHRESHOLD CHARACTERISTICS AND INTERFACE STATEDENSITY OF a-Si:H TFT

K. Maeda, H. Koyanagi and T. Jinnai 889

EXPLORATION OF AMORPHOUS SILICON THIN FILMTRANSISTOR DEGRADATION WITH THERMAL ANNEAL

R.F. Kwasnick, G.E. Possin and W.L. Hill II 895

HYDROGENATION EFFECT OF AMORPHOUS SILICON THINFILM TRANSISTORS BY ATMOSPHERIC PRESSURE CVD

B.C. Ann, J.H. Kim, D.G. Kim, B.Y. Moon, K.N. Kim, C.W. Leeand J. Jang 901

AMORPHOUS SILICON AND SILICON-GERMANIUM THIN-FILMTRANSISTORS FORMED BY ION IMPLANTATION

G. Sarcona, M.K. Hatalis and A. Catalano 907

EXTRACTION OF ALTERED LOCALIZED-STATES IN a-Si ANDPOLY-Si TFT's UNDER VARIOUS CONDITIONS

J.R. Hwang, J.S. Park, M.C. Jun, J. Jang and M.K. Han 913

EFFECTS OF EXCIMER LASER IRRADIATION ON THECHARACTERISTICS OF a-Si:H TFT's

S.K. Lee, C.H. Oh, Y.S. Kim, J.S. Park and M.K. Han 919

AMORPHOUS-SILICON TFTs WITH SELF-ALIGNED POLY-SILICONSOURCE AND DRAIN

C.-D. Kim, O. Sugiura and M. Matsumura 925

PART VIII: IMAGE SENSORS AND NOVEL DEVICES

ADDRESSABLE PHOTOSENSING ELEMENTS FOR 2-DIMENSIONALIMAGE SENSORS USING a-Si ALLOY P-I-N DIODES

G. De Cesare, P. Di Rosa, S. La Monica, S. Salotti, R. Rita andL. Schirone 933

2D IMAGE SENSING ARRAYS WITH NIP DIODESC. van Berkel, N.C. Bird, C.J. Curling and I.D. French 939

CONSIDERATIONS FOR HIGH FRAME RATE OPERATION OFTWO-DIMENSIONAL a-Si:H IMAGING ARRAYS

L.E. Antonuk, J. Yorkston, W. Huang, J. Siewerdsen and R.A. Street 945

PHOTORESPONSE LINEARITY OF a-Si:H IMAGING PIXELSJ. Yorkston, L.E. Antonuk, W. Huang and R.A. Street 951

PAGE SIZED a-Si:H 2-DIMENSIONAL IMAGING ARRAYSR.A. Street, R. Weisfield, S. Nelson, P. Nylen and X.D. Wu 957

SIMULATION OF a-Si:H COLOR SENSORS FOR APPLICATION ININTELLIGENT SENSOR SYSTEMS

H. Stiebig and M. Bohm 963

XVII






UTILIZATION OF a-Si:H SWITCHING DIODES FOR SIGNALREADOUT FROM a-Si:H PIXEL DETECTORS

G. Cho, J.S. Drewery, W.S. Hong, T. Jing, H. Lee, S.N. Kaplan,A. Mireshghi, V. Perez-Mendez and D. Wildermuth 969

CURRENT-NOISE-POWER-SPECTRA FOR AMORPHOUSSILICON PHOTODIODE SENSORS

J.M. Boudry and L.E. Antonuk 975

LARGE AREA POSITION SENSITIVE DETECTOR BASED ONAMORPHOUS SILICON TECHNOLOGY

E. Fortunato, M. Vieira, L. Ferreira, C.N. Carvalho,G. Lavareda and R. Martins 981

ELECTRONIC PROPERTIES OF a-SiNx:H THIN FILM DIODESJ.M. Shannon, J.N. Sandoe, I.D. French and A.D. Annis 987

AN ASYNCHRONOUS IMAGE SUBTRACTING OPTICALLYADDRESSED SPATIAL LIGHT MODULATOR

P.R. Barbier and G. Moddel 993

CURRENT TRANSPORT MODELING IN AN AMORPHOUS SILICONANTIFUSE STRUCTURE

A. Amerasekera, S.P. Kwok and J. Seitchik 999

VISIBLE-LIGHT AMORPHOUS SILICON-NITRIDE THIN FILMLIGHT EMITTING DIODE

W. Boonkosum, D. Kruangam and S. Panyakeow 1005

A NOVEL STRUCTURE OF a-SiN:H/a-Si:H MULTILAYERAVALANCHE PHOTODIODE (MAPD)

L. Jiao, Z. Meng and Z. Sun 1011

ANALOGUE MEMORY EFFECTS IN METAL / a-Si:H /METALTHIN FILM STRUCTURES

A.J. Snell, J. Hajto, M.J. Rose, I.S. Osborne, A. Holmes, A.E. Owenand R.A.G. Gibson 1017

NEW a-Si:H PHOTO-DETECTORS FOR LONG-TERM CHARGESTORAGE

H. Lee, G. Cho, J.S. Drewery, W.S. Hong, T. Jing, S.N. Kaplan,A. Mireshghi, V. Perez-Mendez and D. Wildermuth 1023

PART IX: MISCELLANEOUS TOPICS

MICROSTRUCTURAL AND VIBRATIONAL CHARACTERIZATIONOF THE HYDROGENATED AMORPHOUS SILICON POWDERS

J. Costa, G. Sardin, J. Campmany, J.L. Andujar, A. Canillas andE. Bertran 1031

xviii






MICROSTRUCTURE AND INTEGRITY OF THIN SILICON FILMSON SiO2 AFTER IMMERSION IN 10:1 BUFFERED HF

R.I. Hegde, M.A. Chonko and P.J. Tobin 1037

POSITRON-BEAM OBSERVATION OF DOPANT-DEFECT COMPLEXESIN AMORPHIZED SILICON

R.D. Goldberg, T.C. Leung, I.V. Mitchell and P.J. Schultz 1043

INTERDIFFUSION AT a-Ge:H/Al AND a-Si:H/Al INTERFACESS.J. Jones, A.B. Swartzlander-Franz, Y. Chen and D.L. Williamson 1049

CHARGE CARRIER TRANSPORT IN c-Si/a-Si:H HETEROJUNCTIONSA. Sanders, H.-C. Neitzert, C. Swiatkowski and M. Kunst 1055

STEP-LIKE CURRENT-VOLTAGE CHARACTERISTICS IN METAL /a-Si:H / METAL STRUCTURES

J. Hajto, A.J. Snell, M.J. Rose, A.E. Owen, I.S. Osborne, T. Kosa,A. Holmes and R.A.G. Gibson 1061

AUTHOR INDEX 1067

SUBJECT INDEX 1073

XIX











Preface

This volume contains papers presented at the symposium on Amorphous Silicon Technologywhich was held at the 1993 MRS Spring Meeting in San Francisco, California. This symposium,which is a continuation of successful symposia held at previous MRS Spring meetings, focusedon materials issues relating to the device applications which employ amorphous silicon and relatedalloys.

These proceedings contain papers on film growth, structure, electronic and opticalproperties, defects, interfaces and contacts, heterostructures, and stability and nonequilibriumbehavior. The applications represented in this volume include the more traditional applicationssuch as solar cells and thin film transistors as well as several diverse applications such as imagesensors, detectors, spatial light modulators and electroluminescent devices. The volume isorganized into distinct sections covering growth and modification, structure and defects, opto-electronic properties, stability, alloys and multilayers, solar cells, thin film transistors, imagesensors and novel devices, and miscellaneous topics.

The most important technological development of the past few years has been thecommercialization of thin film transistors (TFT's) based on a-Si:H and related alloys for displayapplications. Before the widespread development of TFT's the commercial applications of a-Si:Hwere largely devoted to solar cells whose deployment is being hampered by the instabilityphenomena and its basic understanding remains elusive. Hence a significant number of papersdeal with this topic as well as the basic understanding of the material. The alloys of SiGe, SiCand SiN are not only better understood but have resulted in the synthesis of better materials; forinstance, inclusion of SiN into a device structure has resulted in a weak blue electroluminescentsignal.

On behalf of the symposium participants, the organizing committee thanks the sponsors whoprovided financial assistance: The Electrical Power Institute, Elettrorava SpA (Italy), ENEA(Italy), Xerox Corporation, KFA (Germany), Solarex Corp., Advanced Photovoltaic Systems, andUSSC. The program committee members were E. A. Schiff, J.R. Abelson, V. Dalai, H. Okamotoand M.J. Powell. Special thanks are due to Mary Ann Woolf and Craig Taylor of the Universityof Utah for all the assistance that they provided.

Lastly, Peter G. LeComber, one of the organizers of this symposium, as well as severalprevious symposia, unfortunately died a few months ago. It is appropriate to remember that Peterperformed pioneering work in this field at the University of Dundee, Scotland. His immensecontributions over the last two decades or so have resulted in the field mushrooming into asignificant industry. As a friend and talented scientist, words cannot totally express this tragicloss. This volume is dedicated to the memory of Peter G. LeComber.

Eric A. SchiffMalcolm J. ThompsonArun MadanKazunobu Tanaka

June 1993

XXI







Volume 279—Beam-Solid Interactions—Fundamentals and Applications, M.A. Nastasi,N. Herbots, L.R. Harriott, R.S. Averback, 1993, ISBN: 1-55899-174-3

Volume 280—Evolution of Surface and Thin Film Microstructure, H.A. Atwater,E. Chason, M. Grabow, M. Lagally, 1993, ISBN: 1-55899-175-1

Volume 281—Semiconductor Heterostructures for Photonic and Electronic Applications,D.C. Houghton, C.W. Tu, R.T. Tung, 1993, ISBN: 1-55899-176-X

Volume 282—Chemical Perspectives of Microelectronic Materials III, C.R. Abernathy,C.W. Bates, D.A. Bohling, W.S. Hobson, 1993, ISBN: 1-55899-177-8

Volume 283—Microcrystalline Semiconductors—Materials Science & Devices,Y. Aoyagi, L.T. Canham, P.M. Fauchet, I. Shimizu, C.C. Tsai, 1993,ISBN: 1-55899-178-6

Volume 284—Amorphous Insulating Thin Films, J. Kanicki, R.A.B. Devine,W.L. Warren, M. Matsumura, 1993, ISBN: 1-55899-179-4

Volume 285—Laser Ablation in Materials Processing—Fundamentals and Applications,B. Braren, J. Dubowski, D. Norton, 1993, ISBN: 1-55899-180-8

Volume 286—Nanophase and Nanocomposite Materials, S. Komarneni, J.C. Parker,G.J. Thomas, 1993, ISBN: 1-55899-181-6

Volume 287—Silicon Nitride Ceramics—Scientific and Technological Advances,I-W. Chen, P.F. Becher, M. Mitomo, G. Petzow, T-S. Yen, 1993,ISBN: 1-55899-182-4

Volume 288—High-Temperature Ordered Intermetallic Alloys V, I. Baker,J.D. Whittenberger, R. Darolia, M.H. Yoo, 1993, ISBN: 1-55899-183-2

Volume 289—Flow and Microstructure of Dense Suspensions, L.J. Struble,C.F. Zukoski, G. Maitland, 1993, ISBN: 1-55899-184-0

Volume 290—Dynamics in Small Confining Systems, J.M. Drake, D.D. Awschalom,J. Klafter, R. Kopelman, 1993, ISBN: 1-55899-185-9

Volume 291—Materials Theory and Modelling, P.D. Bristowe, J. Broughton,J.M. Newsam, 1993, ISBN: 1-55899-186-7

Volume 292-Biomolecular Materials, S.T. Case, J.H. Waite, C. Viney, 1993,ISBN: 1-55899-187-5

Volume 293—Solid State Ionics III, G-A. Nazri, J-M. Tarascon, M. Armand, 1993,ISBN: 1-55899-188-3

Volume 294—Scientific Basis for Nuclear Waste Management XVI, C.G. Interrante,R.T. Pabalan, 1993, ISBN: 1-55899-189-1

Volume 295—Atomic-Scale Imaging of Surfaces and Interfaces, D.K. Biegelson,D.S.Y. Tong, D.J. Smith, 1993, ISBN: 1-55899-190-5

Volume 296—Structure and Properties of Energetic Materials, R.W. Armstrong,J.J. Gilman, 1993, ISBN: 1-55899-191-3







Volume 297—Amorphous Silicon Technology—1993, E.A. Schiff, M.J. Thompson,P.G. LeComber, A. Madan, K. Tanaka, 1993, ISBN: 1-55899-193-X

Volume 298—Silicon-Based Optoelectronic Materials, R.T. Collins, M.A. Tischler,G. Abstreiter, M.L. Thewalt, 1993, ISBN: 1-55899-194-8

Volume 299—Infrared Detectors—Materials, Processing, and Devices, A. Appelbaum,L.R. Dawson, 1993, ISBN: 1-55899-195-6

Volume 300—III-V Electronic and Photonic Device Fabrication and Performance,K.S. Jones, S.J. Pearton, H. Kanber, 1993, ISBN: 1-55899-196-4

Volume 301—Rare-Earth Doped Semiconductors, G.S. Pomrenke, P.B. Klein,D.W. Langer, 1993, ISBN: 1-55899-197-2

Volume 302—Semiconductors for Room-Temperature Radiation Detector Applications,R.B. James, P. Siffert, T.E. Schlesinger, L. Franks, 1993,ISBN: 1-55899-198-0

Volume 303—Rapid Thermal and Integrated Processing II, J.C. Gelpey, J.K. Elliott,J.J. Wortman, A. Ajmera, 1993, ISBN: 1-55899-199-9

Volume 304—Polymer/Inorganic Interfaces, R.L. Opila, A.W. Czanderna, FJ . Boerio,1993, ISBN: 1-55899-200-6

Volume 305—High-Performance Polymers and Polymer Matrix Composites, R.K. Eby,R.C. Evers, D. Wilson, M.A. Meador, 1993, ISBN: 1-55899-201-4

Volume 306—Materials Aspects of X-Ray Lithography, G.K. Celler, J.R. Maldonado,1993, ISBN: 1-55899-202-2

Volume 307—Applications of Synchrotron Radiation Techniques to Materials Science,D.L. Perry, R. Stockbauer, N. Shinn, K. D'Amico, L. Terminello,1993, ISBN: 1-55899-203-0

Volume 308—Thin Films—Stresses and Mechanical Properties IV, P.H. Townsend,J. Sanchez, C-Y. Li, T.P. Weihs, 1993, ISBN: 1-55899-204-9

Volume 309—Materials Reliability in Microelectronics III, K. Rodbell, B. Filter,P. Ho, H. Frost, 1993, ISBN: 1-55899-205-7

Volume 310—Ferroelectric Thin Films III, E.R. Myers, B.A. Tuttle, S.B. Desu,P.K. Larsen, 1993, ISBN: 1-55899-206-5

Volume 311—Phase Transformations in Thin Films—Thermodynamics and Kinetics,M. Atzmon, J.M.E. Harper, A.L. Greer, M.R. Libera, 1993,ISBN: 1-55899-207-3

Volume 312—Common Themes and Mechanisms of Epitaxial Growth, P. Fuoss,J. Tsao, D.W. Kisker, A. Zangwill, T.F. Kuech, 1993,ISBN: 1-55899-208-1

Volume 313—Magnetic Ultrathin Films, Multilayers and Surfaces/MagneticInterfaces—Physics and Characterization (2 Volume Set), C. Chappert,R.F.C. Farrow, B.T. Jonker, R. Clarke, P. Griinberg, K.M. Krishnan,S. Tsunashima/E.E. Marinero, T. Egami, C. Rau, S.A. Chambers,1993, ISBN: 1-55899-211-1

Volume 314—Joining and Adhesion of Advanced Inorganic Materials, A.H. Carim,D.S. Schwartz, R.S. Silberglitt, R.E. Loehman, 1993,ISBN: 1-55899-212-X

Volume 315—Surface Chemical Cleaning and Passivation for SemiconductorProcessing, G.S. Higashi, E.A. Irene, T. Ohmi, 1993,ISBN: 1-55899-213-8Prior Materials Research Society Symposium Proceedings

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