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© 2014 TechSearch International, Inc.
Advanced Packaging Developments: Will It Be FO-WLP, FC-CSP, or 3D IC?
E. Jan Vardaman President
TechSearch International, Inc.
www.techsearchinc.com
© 2014 TechSearch International, Inc.
PC and Mobile Device Market Growth
• Growth in CSPs driven by smartphones and modest growth for tablets • Strong growth in lower-end smartphones puts pressure on advanced
package adoption
Source: TechSearch International, Inc. from IDC and others
© 2014 TechSearch International, Inc.
Packages for Mobile Devices: Which Ones Do I Use? • Touch screen controllers: quad flat no-lead (QFN), fine pitch ball
grid arrays (FBGA) • Antenna: ceramic land grid array (CLGA), QFN • Power amplifiers: LGA (with laminate substrate), typically wire bond
moving to flip chip • RFIC: FBGA, flip chip BGA (FC-BGA), wafer level package (WLP),
Fan-out WLP (FO-WLP) • Modem IC: FC-BGA, stacked die package (FC and WB), package-on-
package (PoP) • Application processor: FC-BGA, bottom package of PoP • NAND flash: FBGA • Power management IC (PMIC): FC-BGA, WLP • WiFi/Bluetooth: CLGA, LGA (with laminate substrate), WLP • Near Field Communications (NFC): FBGA • Sensors: LGA
WLP FO-WLP FC-BGA
LGA module
PoP
QFN
© 2014 TechSearch International, Inc.
Smartphone ASPs Continue to Decline
• Smartphone ASPs continue to decline • Creates price pressure that makes adoption of advanced packaging technology challenging
Source: Adapted from IDC
© 2014 TechSearch International, Inc.
iPhone Trends: Thin is Still In! 12.3mm
115.
3mm
iPhone 3GS: 4 WLPs
iPhone 4 : 6 WLPs
9.3mm
iPhone 4S : 7 WLPs
9.39㎜
9.46㎜
7.6㎜
iPhone 5 : 11+ WLPs
iPhone (11.6 mm): 2 WLPs iPhone 3 (12.3 mm): 4 WLPs
Source: TechSearch International, Inc., adapted from TPSS.
iPhone 5S : 18+ WLPs
7.6㎜
© 2014 TechSearch International, Inc.
Huawei Ascend P6 Main Board (Front side)
WLP
Source: TPSS.
eWLB
WLP WLP
© 2014 TechSearch International, Inc.
Huawei Ascend P6 Main Board (Back side)
WLP
WLP
Source: TPSS.
WLP
© 2014 TechSearch International, Inc.
What Set the Stage for FO-WLP?
• Historically, conventional WLPs for low I/O small die
– 2 to 100 I/Os – Next 100s of I/Os – Now 400+ I/Os
• With increased I/O can’t “fan-in” using conventional WLP
Source: Casio Micronics
Source: ASE
© 2014 TechSearch International, Inc.
Fan-Out Wafer Level Package
• Reconstituted wafer and perimeter mold compound allows for redistribution of I/O beyond current chip footprint
• Fan-out WLP from ADL Engineering, Amkor, ASE, Deca Technologies, Freescale Semiconductor, FCI/Fujikura, J-Devices, NANIUM, Nepes, SPIL, STATS ChipPAC, and TSMC
• Infineon eWLB (wireless operation acquired by Intel) – Technology licensed by ASE, STATS
ChipPAC, NANIUM
• Improved reliability with new material sets
• Fan-out WLP shipments in hundreds of millions per year
Source: Infineon.
Intel Wireless Division LTE analog baseband 5.32 x 5.04 x 0.7mm eWLB 127 balls, 0.4mm pitch
Source: TPSS.
© 2014 TechSearch International, Inc.
FO-WLP Drivers • Smaller form factor, lower profile package:
similar to conventional WLP in profile (can be ≤0.4 mm)
• Thinner than flip chip package (no substrate) • Support increased I/O density • Excellent electrical and thermal performance • Excellent high temperature warpage
performance • Fine L/S (10/10µm) • Can enable a low-profile PoP solution as
large as 15 mm x 15 mm • Multiple die in package possible • Die fabricated from different technology
nodes can be assembled in a single package • Future growth requires cost reduction
– Panel process? Activities at Amkor/J-Devices, SPIL, and others
– Lower cost materials?
Source: STATS ChipPAC.
© 2014 TechSearch International, Inc.
FO-WLP Projections
• Applications include RF, PMIC, automotive radar, future application processors
• Assumes that cost targets, business, and reliability requirements are met
© 2014 TechSearch International, Inc.
What About Flip Chip?
• Flip chip growth strong – Many high-end, high
performance packages – Low-end packages for
diodes, filters • Trends toward copper pillar • QFNs with flip chip interconnect • Micro bumps for 3D IC w/ TSV • Future flip chip growth in wireless
products – Driven by form factor and
performance – Baseband processors in flip
chip – Application processors in flip
chip – Bottom package in PoP
(application processor, many with SnAg bump moving to Cu pillar
• But how can flip chip be a low-cost package??????
Source: TechSearch International,Inc.
Source: ChipWorks
0
2000
4000
6000
8000
10000
12000
2012 2013 2014 2015 2016 2017
300mm Wafers
© 2014 TechSearch International, Inc.
Huawei Ascend P6 Main Board (Front side)
FC-BGA
Source: TPSS.
FC-BGA
© 2014 TechSearch International, Inc.
Huawei Ascend P6 Main Board (Back side)
PoP w/FC
Source: TPSS.
© 2014 TechSearch International, Inc.
Mainstream to Mid-end Smartphones
Mid-end to High-end Smartphones
1.6 ~ 1.3mm 1.2mm ~ 1.0mm 1.0 mm & below
2009 ~ 2014 2010~ 2014
2011~ 2015
Apple’s A7 processor in iPhone 5S
MLP PoP fcPoP (Bare Die) Exposed Die MLP/ eWLB PoP
FAB node reduction, Higher Functionality/ Integration, Higher Data Rate
Source: STATS ChipPAC
Flip Chip Enables Thin PoP
© 2014 TechSearch International, Inc.
Amkor Early Adoption of Cu Pillar
Cu Pillar for CSP
Flip-chip PoP Fine-pitch flip-chip (50 µm)
Source: Amkor!
Source: TI!
Source: TI!
• Small form factor (smaller die size) • Finer bump pitch than solder (down to 50 µm) • Improved electrical performance • Pb-free solution
© 2014 TechSearch International, Inc.
ASE’s aS3 • Utilizing aS3 as a new simple low cost coreless substrate
– Embedded Traces & Pads – Fine Pitch capable – With or without top soldermask
£ ASE uses mass reflow fine pitch Cu Pillar FC & MUF £ Creates new paradigm in low cost-‐fanout packaging -‐ aS3-‐Plus
– Chip Last vs Chip First for Higher Assembly yields – Fine Pitch bumping direct on die pad without RDL – High Density rouJng – Thicker Copper allows higher current capacity – Thin Package – High thermal conducJvity mold compound gives 3X thermal
performance – IsolaJon from die allows higher potenJal reliability performance
With Top SM
Without Top SM
Panel1.2013 © 2014 TechSearch International, Inc.
Panel Size: 510 x 410 mm (209,100mm2) Strip Size: 240 x 76.2 mm (X2L) PKG Size: 6.28 x 4.68 mm Strip Array: 34x13 => 442 each Pkg/Per/Panel : 4,420 each
Wafer size : 300mm(70,686mm2) Unit(die) size : 6.28X4.68mm Die/Per/Wafer: 2,130 each
FC Cu Pillar aS3-‐Plus Panel vs Wafer U4liza4on
3:1 Area
No Wafer Fab investment needed, ASE uses standard FlipChip Packaging
> 2:1 Pkgs
© 2014 TechSearch International, Inc.
How to Cost Reduce Flip Chip Further???
• Substrate is the biggest cost component of the flip chip package (60 to 75%) • Why not use a leadframe as the substrate! (Poor man’s FO-WLP solution)
– Etched leadframe concept from QPL – JCET took a license from APS (Singapore) for Molded Interconnect
Substrate (MIS), later purchased APS – JCET licensed etched leadframe technology to leadframe makers MCT
(Singapore), QDOS (Malaysia), Phoenix Pioneer technology (Taiwan) – SPIL version enhanced QFN (eQFN) – Amkor version called “routable MLF: – ASE version a2QFN – Carsem offers routable QFN and purchase leadframes from APS
licensees
Source: ASE
© 2014 TechSearch International, Inc. 20
Multi Layer Solution aS3+ : 40um core 0.09mm
Single layer a2QFN
a2QFN – New Fan-Out WLP Solution!
Source: ASE.
© 2014 TechSearch International, Inc.
MIS Coreless Substrate with Flip Chip
• Potential low-cost flip chip solution • Conventional 1-2-1 substrate (left) • Two-layer MIS substrate (right)
– Direct filled microvia down to 50µm diameter for improved routing
Source: APS.
© 2014 TechSearch International, Inc.
Application Processor Packaging Trends • Thinner package and smaller footprint
– Today 1.0mm height requirement – Future ≤0.8 mm
• 3D IC with TSV provides the ultimate in package height reduction
– Highest density, highest performance
– Lowest profile, smallest form factor – Future package (adoption
continues to shift out) • PoP in high-end smartphones
– Embedded capacitors in bottom PoP substrate for improved performance HVM today
– Option 1: Continue with FC on thin substrate
– Option 2: Embedded active die (application processor) in bottom laminate substrate
– Option 3: Fan-out WLP with application processor as bottom package
– Option 4: 3D IC with TSVs for memory and logic stack (requires new architecture to handle thermal constraints, lower cost, and less risk)
Source: Intel
Source: Renesas.
Source: Amkor Technology.
© 2014 TechSearch International, Inc.
3D IC with TSV Adoption Timeline
• Image sensors with backside vias from Toshiba in January 2008, Sony CMOS image sensors + logic
• Tezzaron DRAM 2013, Micron HMC 2015, SK Hynix HBM 2015 • Application processor + memory for mobile 2018 at earliest • Logic on logic 2019 at earliest • Automotive (image sensor + logic) for safety features
Source: TechSearch International, Inc.
© 2014 TechSearch International, Inc.
Why the Delay in Memory + Logic? • Logic and memory stack for
mobile 2018 (at earliest) • Today more expensive than
PoP solution – 3D IC process yield is low – Process steps such as debond
during thinning – Impacts total cost
• Couples memory and logic supply so can’t easily swap one memory supplier for another
• Business risk (versus alternatives) – Mobile products must meet
steep product ramp • Thermal issues, unless low-
power design is available (requires new architecture)
Source: SK Hynix.
© 2014 TechSearch International, Inc.
Conclusions • Mobile world continues to drive…
– Volumes – Package trends – Technology development
• Lower ASPs for mobile devices make consumer happy , but make adoption of advanced packaging challenges
– Maybe difficult to meet steep product ramp with new packaging technology (too much risk)
• Trend in FC and WLP for mobile devices continues – Conventional WLP – FO-WLP – Flip chip (new low-cost options, including leadframes)
• Adoption of new technology such as 3D IC – Cost/performance trade-off: Cost is critical – Established infrastructure key