Advanced LinCMOS Rail-to-Rail Operational Amplifier (Rev. D) · TS274, TLC272, and TLC274Common-Mode Input Voltage Range Includes Negative Rail High-Gain Bandwidth. . . 2.2 MHz Typ

TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAIL

OPERATIONAL AMPLIFIERS

�

SGLS007D − FEBRUARY 2003 − REVISED MARCH 2009

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

� Qualified for Automotive Applications

� Output Swing Includes Both Supply Rails

� Low Noise . . . 9 nV/√Hz Typ at f = 1 kHz

� Low Input Bias Current . . . 1 pA Typ

� Fully Specified for Both Single-Supply andSplit-Supply Operation

� Common-Mode Input Voltage RangeIncludes Negative Rail

� High-Gain Bandwidth . . . 2.2 MHz Typ

� High Slew Rate . . . 3.6 V/μs Typ

� Low Input Offset Voltage 950 μV Max at TA = 25°C

� Macromodel Included

� Performance Upgrades for the TS272,TS274, TLC272, and TLC274

description

The TLC2272 and TLC2274 are dual andquadruple operational amplifiers from TexasInstruments. Both devices exhibit rail-to-railoutput performance for increased dynamic rangein single- or split-supply applications. TheTLC227x family offers 2 MHz of bandwidth and3 V/μs of slew rate for higher speed applications.These devices offer comparable ac performancewhile having better noise, input offset voltage, andpower dissipation than existing CMOS operation-al amplifiers. The TLC227x has a noise voltage of9 nV/√Hz, two times lower than competitivesolutions.

The TLC227x, exhibiting high input impedanceand low noise, is excellent for small-signalconditioning for high-impedance sources, such aspiezoelectric transducers. Because of the micro-power dissipation levels, these devices work wellin hand-held monitoring and remote-sensingapplications. In addition, the rail-to-rail outputfeature, with single- or split-supplies, makes thisfamily a great choice when interfacing withanalog-to-digital converters (ADCs). For precision applications, the TLC227xA family is available with amaximum input offset voltage of 950 μV. This family is fully characterized at 5 V and ±5 V.

The TLC2272/4 also makes great upgrades to the TLC272/4 or TS272/4 in standard designs. They offerincreased output dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature setallows them to be used in a wider range of applications. For applications that require higher output drive andwider input voltage range, see the TLV2432 and TLV2442 devices.

Copyright © 2009, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Advanced LinCMOS is a trademark of Texas Instruments.

|VDD ±| − Supply Voltage − V

10

8

6

44 6 8

12

14

16

10 12 14 16

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

SUPPLY VOLTAGE

TA = 25°C

IO = ±50 μA

IO = ±500 μA

V(O

PP

) −

Max

imu

m P

eak-

to-P

eak

Ou

tpu

t Vo

ltag

e −

VV

O(P

P)

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TLC227x-Q1, TLC227xA-Q1Advanced LinCMOS™ RAIL-TO-RAILOPERATIONAL AMPLIFIERS

�


2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

AVAILABLE OPTIONS�

V max AtPACKAGED DEVICES�

TAVIOmax At

25°C SMALL OUTLINE(D)

TSSOP(PW)

40°C to 125°C950 μV TLC2272AQDRQ1 TLC2272AQPWRQ1

−40°C to 125°C950 μV2.5 mV

TLC2272AQDRQ1TLC2272QDRQ1

TLC2272AQPWRQ1TLC2272QPWRQ1

40°C to 125°C950 μV TLC2274AQDRQ1 TLC2274AQPWRQ1

−40°C to 125°C950 μV2.5 mV

TLC2274AQDRQ1TLC2274QDRQ1

TLC2274AQPWRQ1TLC2274QPWRQ1

† For the most current package and ordering information, see the Package Option Addendumat the end of this document, or see the TI web site at http://www.ti.com.

‡ Package drawings, thermal data, and symbolization are available athttp://www.ti.com/packaging.

1

2

3

4

8

7

6

5

1OUT1IN−1IN+

VDD −/GND

VDD +

2OUT2IN−2IN+

TLC2272D OR PW PACKAGE

(TOP VIEW)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN−1IN+VDD +

2IN+2IN−

2OUT

4OUT4IN−4IN+VDD −

3IN+3IN−3OUT

TLC2274D OR PW PACKAGE

(TOP VIEW)

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equivalent schematic (each amplifier)

Q3 Q6 Q9 Q12 Q14 Q16

Q2 Q5 Q7 Q8 Q10 Q11

D1

Q17Q15Q13

Q4Q1

R5

C1

VDD +

IN+

IN−

R3 R4 R1 R2

OUT

VDD−

ACTUAL DEVICE COMPONENT COUNT†

COMPONENT TLC2272 TLC2274

Transistors 38 76

Resistors 26 52

Diodes 9 18

Capacitors 3 6† Includes both amplifiers and all ESD, bias, and trim circuitry

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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†

Supply voltage, VDD+ (see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VDD− (see Note 1) −8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±16 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input, see Note 1) VDD− − 0.3 V to VDD+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (any input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VDD− ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA −40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range −65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or PW package 260°C. . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD −.2. Differential voltages are at IN+ with respect to IN−. Excessive current will flow if input is brought below VDD − − 0.3 V.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C

PACKAGETA ≤ 25 C

POWER RATINGDERATING FACTOR

ABOVE TA = 25°CTA = 70 C

POWER RATINGTA = 85 C

POWER RATINGTA = 125 C

POWER RATING

D-8 725 mW 5.8 mW/°C 464 mW 337 mW 145 mW

D-14 950 mW 7.6 mW/°C 608 mW 494 mW 190 mW

PW-8 525 mW 4.2 mW/°C 336 mW 273 mW 105 mW

PW-14 700 mW 5.6 mW/°C 448 mW 364 mW —

ELECTROSTATIC DISCHARGE RATING TABLE

RATING

Human-Body Model (HBM) 2000 V

TLC2272 Machine Model (MM) 100 V

ESD Electrostatic discharge rating

TLC2272

Charged-Device Model (CDM) 1500 VESD Electrostatic discharge rating

Human-Body Model (HBM) 500 V

TLC2274 Machine Model (MM) 100 VTLC2274

Charged-Device Model (CDM) 1000 V

recommended operating conditions

MIN MAX UNIT

VDD ± Supply voltage ±2.2 ±8 V

VI Input voltage VDD − VDD + −1.5 V

VIC Common-mode input voltage VDD − VDD + −1.5 V

TA Operating free-air temperature −40 125 °C

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TLC2272Q electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS T †TLC2272Q TLC2272AQ

UNITPARAMETER TEST CONDITIONS TA†

MIN TYP MAX MIN TYP MAXUNIT

V Input offset voltage25°C 300 2500 300 950

μVVIO Input offset voltageFull range 3000 1500

μV

α Temperature coefficient 25°C2 2 μV/°CαVIO

Temperature coefficientof input offset voltage

25 Cto 125°C 2 2 μV/°C

Input offset voltage long-term drift (see Note 4)

VIC = 0 V,VO = 0 V,

VDD ± = ±2.5 V,RS = 50 Ω

25°C 0.002 0.002 μV/mo

I Input offset current

VO = 0 V, RS = 50 Ω25°C 0.5 60 0.5 60

pAIIO Input offset currentFull range 800 800

pA

I Input bias current25°C 1 60 1 60

pAIIB Input bias currentFull range 800 800

pA

V CCommon-mode input

RS = 50 Ω |V O | ≤ 5 mV

25°C0

to 4−0.3

to 4.20

to 4−0.3

to 4.2VVICR

Common mode inputvoltage

RS = 50 Ω, |VIO | ≤ 5 mVFull range

0to 3.5

0to 3.5

V

IOH = −20 μA 25°C 4.99 4.99

High level output IO = 200 μA25°C 4.85 4.93 4.85 4.93

VOHHigh-level outputvoltage

IOH = −200 μAFull range 4.85 4.85 VVOH voltage

I = 1 mA25°C 4.25 4.65 4.25 4.65

V

IOH = −1 mAFull range 4.25 4.25

VIC = 2.5 V, IOL = 50 μA 25°C 0.01 0.01

V = 2 5 V I = 500 μA25°C 0.09 0.15 0.09 0.15

VOL Low-level output voltageVIC = 2.5 V, IOL = 500 μA

Full range 0.15 0.15 VVOL Low level output voltage

V C = 2 5 V IO = 5 mA25°C 0.9 1.5 0.9 1.5

V

VIC = 2.5 V, IOL = 5 mAFull range 1.5 1.5

Large-signalV 2 5 V R 10 kΩ‡

25°C 10 35 10 35

AVD

Large-signal differential voltage

VIC = 2.5 V,VO = 1 V to 4 V

RL = 10 kΩ‡Full range 10 10 V/mVAVD differential voltage

amplificationVO = 1 V to 4 V

RL = 1 mΩ‡ 25°C 175 175

V/mV

ridDifferential inputresistance

25°C 1012 1012 Ω

riCommon-mode inputresistance

25°C 1012 1012 Ω

ciCommon-mode inputcapacitance

f = 10 kHz, P package 25°C 8 8 pF

zoClosed-loop outputimpedance

f = 1 MHz, AV = 10 25°C 140 140 Ω

CMRRCommon-mode rejection VIC = 0 V to 2.7 V, 25°C 70 75 70 75

dBCMRRCommon mode rejectionratio

VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70

dB

kSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95

dBkSVRSupply voltage rejectionratio (ΔVDD /ΔVIO)

VDD = 4.4 V to 16 V, VIC = VDD /2, No load Full range 80 80

dB

I Supply current V 2 5 V No load25°C 2.2 3 2.2 3

mAIDD Supply current VO = 2.5 V, No loadFull range 3 3

mA

† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 VNOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

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TLC2272Q operating characteristics at specified free-air temperature, VDD = 5 V




Slew rate at V 1 25 V to 2 75 V25°C 2.3 3.6 2.3 3.6

SRSlew rate atunity gain

VO = 1.25 V to 2.75 V, RL = 10 kΩ‡, CL = 100 pF‡ Full

1 7 1 7V/μs

unity gain RL = 10 kΩ‡, CL = 100 pF‡ Fullrange 1.7 1.7

μ

VEquivalent input f = 10 Hz 25°C 50 50

nV/√HzVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9

nV/√Hz

VPeak-to-peakequivalent input

f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input

noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4μV

InEquivalent inputnoise current

25°C 0.6 0.6 fA/√Hz

Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%

THD + NTotal harmonicdistortion plus

VO = 0.5 V to 2.5 V,f = 20 kHz,

‡AV = 10 25°C 0.004% 0.004%THD + N distortion plus

noisef 20 kHz,RL = 10 kΩ‡, AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2 18 2 18 MHz

Gain bandwidthproduct

f = 10 kHz,CL = 100 pF‡

RL = 10 kΩ‡,25°C 2.18 2.18 MHz

BMaximum output- VO(PP) = 2 V, AV = 1,

25°C 1 1 MHzBOMMaximum outputswing bandwidth

VO(PP) = 2 V,RL = 10 kΩ‡,

AV = 1,CL = 100 pF‡ 25°C 1 1 MHz

AV = −1,To 0 1% 1 5 1 5

t Settling time

AV = −1,Step = 0.5 V to 2.5 V,

To 0.1%25°C

1.5 1.5sts Settling time

Step = 0.5 V to 2.5 V,RL = 10 kΩ‡,

To 0 01%25°C

2 6 2 6μsRL = 10 kΩ ,

CL = 100 pF‡ To 0.01% 2.6 2.6

φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡

25°C 50° 50°

Gain margin

RL = 10 kΩ‡, CL = 100 pF‡

25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 V

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TLC2272Q electrical characteristics at specified free-air temperature, VDD± = ±5 V (unlessotherwise noted)






μV

α Temperature coefficient of 25°C2 2 μV/°CαVIO

Temperature coefficient ofinput offset voltage

25 Cto 125°C 2 2 μV/°C

Input offset voltagelong-term drift (see Note 4)

VIC = 0 V,RS = 50 Ω

VO = 0 V, 25°C 0.002 0.002 μV/mo

I O Input offset current25°C 0.5 60 0.5 60


pA



pA

−5 −5 3 −5 −5 325°C −5

t 4−5.3

t 4 2−5

t 4−5.3

t 4 2V

Common-mode inputR 50 Ω |V | ≤ 5 mV

25 Cto 4 to 4.2 to 4 to 4.2

VVICRCommon mode inputvoltage

RS = 50 Ω, |VIO | ≤ 5 mV−5 −5

VICR voltage S , | IO |Full range

−5t 3 5

−5t 3 5

Full rangeto 3.5 to 3.5

IO = −20 μA 25°C 4.99 4.99

Maximum positive peak I = 200 μA25°C 4.85 4.93 4.85 4.93

VOM +Maximum positive peakoutput voltage

IO = −200 μAFull range 4.85 4.85 VVOM + output voltage

IO = 1 mA25°C 4.25 4.65 4.25 4.65

V

IO = −1 mAFull range 4.25 4.25

VIC = 0 V, IO = 50 μA 25°C −4.99 −4.99

Maximum negative peak V = 0 V I = 500 μA25°C −4.85 −4.91 −4.85 −4.91

VOM −Maximum negative peakoutput voltage

VIC = 0 V, IO = 500 μAFull range −4.85 −4.85 VVOM − output voltage

V = 0 V I = 5 mA25°C −3.5 −4.1 −3.5 −4.1

V

VIC = 0 V, IO = 5 mAFull range −3.5 −3.5

Large signal differential R = 10 kΩ25°C 20 50 20 50

AVDLarge-signal differentialvoltage amplification VO = ±4 V

RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO ±4 V

RL = 1 mΩ 25°C 300 300

V/mV

rid Differential input resistance 25°C 1012 1012 Ω


25°C 1012 1012 Ω


f = 10 kHz, P package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 130 130 Ω

CMRRCommon-mode rejection VIC = −5 V to 2.7 V, 25°C 75 80 75 80


VIC = 5 V to 2.7 V, VO = 0 V, RS = 50 Ω Full range 75 75

dB

kSupply-voltage rejection VDD = ±2.2 V to ±8 V, 25°C 80 95 80 95

dBkSVRSupply voltage rejectionratio (ΔVDD ± /ΔVIO)

VDD = ±2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80

dB



mA

† Full range is −40°C to 125°C for Q level part.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated


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TLC2272Q operating characteristics at specified free-air temperature, VDD± = ±5 V




Slew rate at V ±1 V R 10 kΩ25°C 2.3 3.6 2.3 3.6

SRSlew rate atunity gain

VO = ±1 V, RL = 10 kΩ,CL = 100 pF Full

1 7 1 7V/μs

unity gain CL = 100 pF Fullrange 1.7 1.7

μ


nV/√HzVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9

nV/√Hz


f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input



25°C 0.6 0.6 fA/√Hz

Total harmonic VO = ±2.3 V AV = 1 0.0011% 0.0011%


VO = ±2.3 VRL = 10 kΩ, AV = 10 25°C 0.004% 0.004%THD + N distortion plus

noiseRL 10 kΩ,f = 20 kHz AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2 25 2 25 MHz


f = 10 kHz,CL = 100 pF

RL = 10 kΩ,25°C 2.25 2.25 MHz

BMaximumoutput swing

VO(PP) = 4.6 V, AV = 1,25°C 0 54 0 54 MHzBOM output-swing

bandwidth

VO(PP) = 4.6 V,RL = 10 kΩ,

AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz

AV = −1,To 0 1% 1 5 1 5

t Settling time

AV = −1,Step = −2.3 V to 2.3 V,

To 0.1%25°C


Step = −2.3 V to 2.3 V,RL = 10 kΩ,

To 0 01%25°C

3 2 3 2μsRL = 10 kΩ,

CL = 100 pF To 0.01% 3.2 3.2

φmPhase margin atunity gain RL = 10 kΩ, CL = 100 pF

25°C 52° 52°

Gain marginRL = 10 kΩ, CL = 100 pF

25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.

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TLC2274Q electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwisenoted)






μV

α Temperature coefficient 25°C2 2 μV/°CαVIO

Temperature coefficientof input offset voltage

25 Cto 125°C 2 2 μV/°C

Input offset voltagelong-term drift(see Note 4)

VDD ± = ±2.5 V,VO = 0 V,

VIC = 0 V,RS = 50 Ω

25°C 0.002 0.002 μV/mo

I O Input offset current25°C 0.5 60 0.5 60


pA



pA

0 −0 3 0 −0 325°C 0

t 4−0.3

t 4 20

t 4−0.3

t 4 2V

Common-mode inputR 50 Ω |V | ≤ 5 mV

25 Cto 4 to 4.2 to 4 to 4.2

VVICRCommon mode inputvoltage

RS = 50 Ω, |VIO | ≤ 5 mV0 to 0 to

VICR voltage S , | IO |Full range

0 to3 5

0 to3 5

Full range3.5 3.5

IOH = −20 μA 25°C 4.99 4.99

High level output I = 200 μA25°C 4.85 4.93 4.85 4.93

VOHHigh-level outputvoltage

IOH = −200 μAFull range 4.85 4.85 VVOH voltage

IO = 1 mA25°C 4.25 4.65 4.25 4.65

V

IOH = −1 mAFull range 4.25 4.25

VIC = 2.5 V, IOL = 50 μA 25°C 0.01 0.01

Low level outputVIC = 2.5 V, 25°C 0.09 0.15 0.09 0.15

VOLLow-level outputvoltage

VIC = 2.5 V,IOL = 500 μA Full range 0.15 0.15 VVOL voltage

V = 2 5 V I = 5 mA25°C 0.9 1.5 0.9 1.5

V

VIC = 2.5 V, IOL = 5 mAFull range 1.5 1.5

L i l diff ti l V 2 5 V R 10 kΩ‡25°C 10 35 10 35

AVDLarge-signal differentialvoltage amplification

VIC = 2.5 V,VO = 1 V to 4 V

RL = 10 kΩ‡Full range 10 10 V/mVAVD voltage amplification VO = 1 V to 4 V

RL = 1 MΩ‡ 25°C 175 175

V/mV

ridDifferential inputresistance

25°C 1012 1012 Ω


25°C 1012 1012 Ω


f = 10 kHz, N package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 140 140 Ω

CMRRCommon-mode VIC = 0 V to 2.7 V, 25°C 70 75 70 75

dBCMRRCommon mode rejection ratio

VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70

dB

kSSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95

dBkSVRSupply voltage rejectionratio (ΔVDD /ΔVIO)

VDD = 4.4 V to 16 V,VIC = VDD /2, No load Full range 80 80

dB



mA

† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 VNOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated


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TLC2274Q operating characteristics at specified free-air temperature, VDD = 5 V




Slew rate at unity V 0 5 V to 2 5 V C 100 pF‡25°C 2.3 3.6 2.3 3.6

SRSlew rate at unitygain

VO = 0.5 V to 2.5 V,RL = 10 kΩ‡

CL = 100 pF‡Full

1 7 1 7V/μs

gain RL = 10 kΩ‡, Fullrange 1.7 1.7

μ


nV/√HVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9

nV/√Hz


f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input



25°C 0.6 0.6 fA /√Hz

Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%


VO = 0.5 V to 2.5 V,f = 20 kHz,

‡AV = 10 25°C 0.004% 0.004%THD + N distortion plus

noisef 20 kHz,RL = 10 kΩ‡

AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2 18 2 18 MHz


f = 10 kHz,CL = 100 pF‡

RL = 10 kΩ‡,25°C 2.18 2.18 MHz

BMaximum out-put swing band

VO(PP) = 2 V, AV = 1,25°C 1 1 MHzBOM put-swing band-

width

VO(PP) = 2 V,RL = 10 kΩ‡,

AV = 1,CL = 100 pF‡ 25°C 1 1 MHz

AV = −1,To 0 1% 1 5 1 5

t Settling time

AV = −1,Step = 0.5 V to 2.5 V,

To 0.1%25°C


Step = 0.5 V to 2.5 V,RL = 10 kΩ‡,

To 0 01%25°C

2 6 2 6μsRL = 10 kΩ ,

CL = 100 pF‡ To 0.01% 2.6 2.6

φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡

25°C 50° 50°

Gain marginRL = 10 kΩ‡, CL = 100 pF‡

25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.‡ Referenced to 2.5 V

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TLC2274Q electrical characteristics at specified free-air temperature, VDD± = ±5 V (unlessotherwise noted)





VVIO Input offset voltageFull range 3000 1500

μV

Temperature coefficient of 25°C2 2 V/°CαVIO

Temperature coefficient ofinput offset voltage

25 Cto 125°C 2 2 μV/°C

Input offset voltage long-term drift (see Note 4)

VIC = 0 V,RS = 50 Ω

VO = 0 V, 25°C 0.002 0.002 μV/mo

I Input offset current

RS = 50 Ω25°C 0.5 60 0.5 60


pA



pA

−5 −5 3 −5 −5 325°C

−5t 4

−5.3t 4 2

−5t 4

−5.3t 4 2

VCommon-mode input

R 50 Ω |V | ≤ 5 mV25°C to 4 to 4.2 to 4 to 4.2

VVICRCommon mode inputvoltage RS = 50 Ω, |VIO | ≤ 5 mV

−5 −5VICR voltage S , | IO |

Full range−5

t 3 5−5

t 3 5Full range to 3.5 to 3.5

IO = −20 μA 25°C 4.99 4.99

M i iti k I 200 A25°C 4.85 4.93 4.85 4.93

VOM +Maximum positive peakoutput voltage

IO = −200 μAFull range 4.85 4.85 VVOM + output voltage

I 1 mA25°C 4.25 4.65 4.25 4.65

V

IO = −1 mAFull range 4.25 4.25

VIC = 0 V, IO = 50 μA 25°C −4.99 −4.99

M i ti k V 0 V I 500 A25°C −4.85 −4.91 −4.85 −4.91

VOM −Maximum negative peakoutput voltage

VIC = 0 V, IO = 500 μAFull range −4.85 −4.85 VVOM − output voltage

V 0 V I 5 mA25°C −3.5 −4.1 −3.5 −4.1

V

VIC = 0 V, IO = 5 mAFull range −3.5 −3.5

L i l diff ti l R 10 kΩ25°C 20 50 20 50

AVDLarge-signal differentialvoltage amplification VO = ±4 V

RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO ±4 V

RL = 1 MΩ 25°C 300 300

V/mV

rid Differential input resistance 25°C 1012 1012 Ω

riCommon-mode input resistance

25°C 1012 1012 Ω


f = 10 kHz, N package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 130 130 Ω

CMRRCommon-mode rejection VIC = −5 V to 2.7 V 25°C 75 80 75 80


VIC = 5 V to 2.7 VVO = 0 V, RS = 50 Ω Full range 75 75

dB

kSupply-voltage rejection VDD ± = ± 2.2 V to ±8 V, 25°C 80 95 80 95

dBkSVRSupply voltage rejectionratio (ΔVDD ± /ΔVIO)

VDD ± = ± 2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80

dB

I Supply current V = 0 V No load25°C 4.8 6 4.8 6

mAIDD Supply current VO = 0 V, No loadFull range 6 6

mA

† Full range is −40°C to 125°C for Q level part.NOTE 4: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated


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�



TLC2274Q operating characteristics at specified free-air temperature, VDD± = ±5 V




Slew rate at unity V ±2 3 V R 10 kΩ25°C 2.3 3.6 2.3 3.6

SRSlew rate at unitygain

VO = ±2.3 V,CL = 100 pF

RL = 10 kΩ,Full

1 7 1 7V/μs

gain CL = 100 pF Fullrange 1.7 1.7

μ


nV/√HVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9

nV/√Hz


f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input



25°C 0.6 0.6 fA /√Hz

Total harmonic VO = ±2.3 V, AV = 1 0.0011% 0.0011%


VO = ±2.3 V,RL = 10 kΩ, AV = 10 25°C 0.004% 0.004%THD + N distortion plus

noiseRL 10 kΩ,f = 20 kHz AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2 25 2 25 MHz


f = 10 kHz,CL = 100 pF

RL = 10 kΩ,25°C 2.25 2.25 MHz

BMaximumoutput swing

VO(PP) = 4.6 V, AV = 1,25°C 0 54 0 54 MHzBOM output-swing

bandwidth

VO(PP) = 4.6 V,RL = 10 kΩ,

AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz

AV = −1,To 0 1% 1 5 1 5

t Settling time

AV = −1,Step = −2.3 V to 2.3 V,

To 0.1%25°C


Step = −2.3 V to 2.3 V,RL = 10 kΩ,

To 0 01%25°C

3 2 3 2μsRL = 10 kΩ,

CL = 100 pF To 0.01% 3.2 3.2

φmPhase margin atunit gain RL = 10 kΩ, CL = 100 pF

25°C 52° 52°

Gain marginRL = 10 kΩ, CL = 100 pF

25°C 10 10 dB† Full range is −40°C to 125°C for Q level part.

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�



TYPICAL CHARACTERISTICS

Table of GraphsFIGURE

V Input offset voltageDistribution 1 − 4

VIO Input offset voltageDistributionvs Common-mode voltage

1 45, 6

αVIO Input offset voltage temperature coefficient Distribution 7 − 10

IIB /IIO Input bias and input offset current vs Free-air temperature 11

V Input voltagevs Supply voltage 12

VI Input voltagevs Supply voltagevs Free-air temperature

1213

VOH High-level output voltage vs High-level output current 14

VOL Low-level output voltage vs Low-level output current 15, 16

VOM + Maximum positive peak output voltage vs Output current 17

VOM − Maximum negative peak output voltage vs Output current 18

VO(PP) Maximum peak-to-peak output voltage vs Frequency 19

I Short circuit output currentvs Supply voltage 20

IOS Short-circuit output currentvs Supply voltagevs Free-air temperature

2021

VO Output voltage vs Differential input voltage 22, 23

Large-signal differential voltage amplification vs Load resistance 24

AVDLarge-signal differential voltage amplificationand phase margin

vs Frequency 25, 26

Large-signal differential voltage amplification vs Free-air temperature 27, 28

zo Output impedance vs Frequency 29, 30

CMRR Common mode rejection ratiovs Frequency 31

CMRR Common-mode rejection ratiovs Frequencyvs Free-air temperature

3132

k Supply voltage rejection ratiovs Frequency 33, 34

kSVR Supply-voltage rejection ratiovs Frequencyvs Free-air temperature

33, 3435

I Supply currentvs Supply voltage 36, 37

IDD Supply currentvs Supply voltagevs Free-air temperature

36, 3738, 39

SR Slew ratevs Load capacitance 40

SR Slew ratevs Load capacitancevs Free-air temperature

4041

Inverting large-signal pulse response 42, 43

VVoltage-follower large-signal pulse response 44, 45

VO Inverting small-signal pulse response 46, 47

Voltage-follower small-signal pulse response 48, 49

Vn Equivalent input noise voltage vs Frequency 50, 51

Noise voltage over a 10-second period 52

Integrated noise voltage vs Frequency 53

THD + N Total harmonic distortion plus noise vs Frequency 54

Gain bandwidth productvs Supply voltage 55

Gain-bandwidth productvs Supply voltagevs Free-air temperature

5556

φm Phase margin vs Load capacitance 57

Gain margin vs Load capacitance 58

NOTE: For all graphs where VDD = 5 V, all loads are referenced to 2.5 V.

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�




VIO − Input Offset Voltage − mV

Per

cen

tag

e o

f Am

plif

iers

− %

DISTRIBUTION OF TLC2272INPUT OFFSET VOLTAGE

10

5

0

20

15

−1.6 −1.2 0 0.4 0.8 1.2 1.6

891 Amplifiers From

−0.8 −0.4

2 Wafer LotsVDD = ±2.5 V

TA = 25°C

Figure 1


Per

cen

tag

e o

f Am

plif

iers

− %


10

5

0

20

15

−1.6 −1.2 0 0.4 0.8 1.2 1.6−0.8 −0.4

891 Amplifiers From2 Wafer LotsVDD = ±5 VTA = 25°C

Figure 2

Figure 3


Per

cen

tag

e o

f Am

plif

iers

− %


10

5

0

20

15

0 0.4 0.8 1.2 1.6

992 Amplifiers From

−1.6 −1.2 −0.8 −0.4

2 Wafer LotsVDD = ±2.5 V

Figure 4


Per

cen

tag

e o

f Am

plif

iers

− %


10

5

0

20

15

0 0.4 0.8 1.2 1.6

992 Amplifiers From

−1.6 −1.2 −0.8 −0.4

2 Wafer LotsVDD = ±5 V

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�




0.5

0

−1−1 0 1

VIO

− In

pu

t O

ffse

t Vo

ltag

e −

mV

1

2 3 4 5

VIO

VIC − Common-Mode Voltage − V

VDD = 5 VTA = 25°CRS = 50 Ω

−0.5

INPUT OFFSET VOLTAGEvs

COMMON-MODE VOLTAGE

Figure 5

0.5

0

−1−1 0 1

VIO

− In

pu

t O

ffse

t Vo

ltag

e −

mV

1

2 3 4 5

INPUT OFFSET VOLTAGEvs

COMMON-MODE VOLTAGE

VIC − Common-Mode Voltage − V

VIO −0.5

VDD = ±5 VTA = 25°CRS = 50 Ω

−6 −5 −4 −3 −2

Figure 6

15

10

5

0−1 0 1

Per

cen

tag

e o

f Am

plif

iers

− %

20

25

2 3 4 5

DISTRIBUTION OF TLC2272vs

INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†

αVIO − Temperature Coefficient − μV/°C

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VP Package25°C to 125°C

−5 −4 −3 −2

Figure 7

−5 −4 −3 −2

15

10

5

0−1 0 1

Per

cen

tag

e o

f Am

plif

iers

− %

20

25

2 3 4 5




128 Amplifiers From2 Wafer LotsVDD = ±5 VP Package25°C to 125°C

Figure 8

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

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�




15

10

5

00 1

Per

cen

tag

e o

f Am

plif

iers

− %

20

25

2 3 4 5




−5 −4 −3 −2 −1

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C

Figure 9

15

10

5

0

Per

cen

tag

e o

f Am

plif

iers

− %

20

25




0 1 2 3 4 5−5 −4 −3 −2 −1

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C

Figure 10

15

10

5

025 45 65 85

20

25

30

105 125

INPUT BIAS AND INPUT OFFSET CURRENT†

vsFREE-AIR TEMPERATURE

TA − Free-Air Temperature − °C

35VDD = ±2.5 VVIC = 0 VVO = 0 VRS = 50 Ω

IIB

IIO

IIB a

nd

IIO

− In

pu

t B

ias

and

Inp

ut

Off

set

Cu

rren

ts −

pA

IBII I

O

Figure 11

0

− 2

− 6

− 8

− 10

8

− 4

2 3 4 5 6 7 8

− In

pu

t Vo

ltag

e −

V

4

2

6

10

INPUT VOLTAGEvs

SUPPLY VOLTAGE


VI

TA = 25°C RS = 50 Ω

|VIO| ≤ 5mV

12

Figure 12


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�




−75 − 25 0 25 50 75 100 125

2

1

0

−1

3

4

5

− In

pu

t Vo

ltag

e −

VV

I

INPUT VOLTAGE†



|VIO| ≤ 5mV

VDD = 5 V

− 50

Figure 13

V0H

− H

igh

-Lev

el O

utp

ut

Volt

age

− V

VO

H

IOH − High-Level Output Current − mA

4

2

1

0

6

3

0 1 2 3 4

5

HIGH-LEVEL OUTPUT VOLTAGE†

vsHIGH-LEVEL OUTPUT CURRENT

VDD = 5 V

TA = 125°C

TA = −55°C

TA = 25°C

Figure 14

VO

L −

Lo

w-L

evel

Ou

tpu

t Vo

ltag

e −

V

0.6

0.4

0.2

00 1 2 3

0.8

4 5

VDD = 5 VTA = 25°C

IOL − Low-Level Output Current − mA

V OL

VIC = 1.25 V

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

1

1.2

VIC = 2.5 V

Figure 15

VIC = 0 V

LOW-LEVEL OUTPUT VOLTAGE†

vsLOW-LEVEL OUTPUT CURRENT

VO

L −

Lo

w-L

evel

Ou

tpu

t Vo

ltag

e −

V

IOL − Low-Level Output Current − mA

VO

L

0.6

0.4

0.2

00 1 2 3

0.8

4

1

1.2

5 6

1.4VDD = 5 V VIC = 2.5 V

TA = 125°C

TA = 25°C

TA = −55°C

Figure 16


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�




3

2

10 1 2 3 4 5

− M

axim

um

Po

siti

ve P

eak

Ou

tpu

t Vo

ltag

e −

V

4

5

MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE†

vsOUTPUT CURRENT

|IO| − Output Current − mA

TA = −55°C

TA = 25°C

TA = 125°C

VDD ± = ±5 V

VO

M +

Figure 17

0 1 2 3 4 5 6

IO − Output Current − mA

MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE†

vsOUTPUT CURRENT

VDD = ±5 VVIC = 0 V

TA = 125°C

TA = 25°C

TA = −55°C

−3.8

−4

−4.2

−4.4

−4.6

−4.8

−5

− M

axim

um

Neg

ativ

e P

eak

Ou

tpu

t Vo

ltag

e −

VV

OM

−

Figure 18

Figure 19

2

1

010 k 100 k 1 M

3

f − Frequency − Hz

4

10 M

6

5

7

8

9

10

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

V(O

PP

) −

Max

imu

m P

eak-

to-P

eak

Ou

tpu

t Vo

ltag

e −

VV

O(P

P)

VDD = 5 V

VDD = ±5 V

RL = 10 kΩTA = 25°C

Figure 20

4

0

2 3 4

8

12

16

5 6 7 8

IOS

− S

ho

rt-C

ircu

it O

utp

ut

Cu

rren

t −

mA

OS

I


SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE

VID = 100 mV

VO = 0 VTA = 25°C

−8

VID = −100 mV

−4


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�




−5

SHORT-CIRCUIT OUTPUT CURRENT†


−75 −50 −25 0 25 50 75 100 125

−1

−3

7

11

15

IOS

− S

ho

rt-C

ircu

it O

utp

ut

Cu

rren

t −

mA

OS

I


VID = 100 mV

VID = −100 mV

VO = 0 VVDD = ±5 V

Figure 21

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

3

2

1

0800

4

5

1200

VID − Differential Input Voltage − μV

− O

utp

ut

Volt

age

− V

V O−800 −400 4000

VDD = 5 VTA = 25°CRL = 10 kΩVIC = 2.5 V

Figure 22

1

−1

−3

−50 250

3

5

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

500 750 1000VID − Differential Input Voltage − μV

− O

utp

ut

Volt

age

− V

VO

−1000 −750 −250−500

Figure 23

VDD = ±5 VTA = 25°CRL = 10 kΩVIC = 0 V

0.1

1

0.1 1 10 100

10

100

1000

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION

vsLOAD RESISTANCE

RL − Load Resistance − kΩ

VO = ±1 VTA = 25°C

VDD = ±5 V

VDD = 5 V

Figure 24

AV

D −

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n −

dB


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�




0

20

1 k 10 k 100 k 1 M

40

60

80

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN

vsFREQUENCY


10 M

om

− P

has

e M

arg

in

φ m

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°C

−20

−40 −90°

−45°

0°

45°

90°

135°

180°A

VD

− L

arg

e-S

ign

al D

iffe

ren

tial

ÁÁÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n −

dB

Figure 25

0

20

1 k 10 k 100 k 1 M

40

60

80

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN

vsFREQUENCY

f − Frequency − Hz10 M

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°C

om

− P

has

e M

arg

in

φ m

−20

−40 −90°

−45°

0°

45°

90°

135°

180°

AV

D −

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n −

dB

Figure 26

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�




LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION†


−75 −50 −25 0 25 50 75 100 12510

100

1 k


VDD = 5 VVIC = 2.5 VVO = 1 V to 4 V

RL = 1 MΩ

RL = 10 kΩ

AV

D −

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

− V

/mV

Figure 27

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION†


−75 −50 −25 0 25 50 75 100 12510

100

1 k


RL = 1 MΩ

RL = 10 kΩ

VDD = ±5 VVIC = 0 VVO = ± 4 V

AV

D −

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁ

AV

DV

olt

age

Am

plif

icat

ion

− V

/mV

Figure 28

10

1

0.1

1000

100

100 1 k 10 k 100 k 1 M

zo −

Ou

tpu

t Im

ped

ance

− O


Ωz o

OUTPUT IMPEDANCEvs

FREQUENCY

VDD = 5 VTA = 25°C

AV = 100

AV = 10

AV = 1

Figure 29

10

1

0.1

1000

100

100 1 k 10 k 100 k 1 M

zo −

Ou

tpu

t Im

ped

ance

− O


Ωz o

OUTPUT IMPEDANCEvs

FREQUENCY

VDD = ±5 VTA = 25°C

AV = 100

AV = 10

AV = 1

Figure 30


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�




COMMON-MODE REJECTION RATIOvs

FREQUENCY

60

40

20

010 100 1 k 10 k

CM

RR

− C

om

mo

n-M

od

e R

ejec

tio

n R

atio

− d

B

80

100

100 k 1 M


VDD = ±5 V

VDD = 5 V

10 M

TA = 25°C

Figure 31


CM

RR

− C

om

mo

n-M

od

e R

ejec

tio

n R

atio

− d

B

COMMON-MODE REJECTION RATIOvs

FREE-AIR TEMPERATURE

82

78

74

70

86

90

−75 −50 −25 0 25 50 75 100 125

VDD = ±5 V

VDD = 5 V

VIC = 0 V to 2.7 V

VIC = −5 V to 2.7 V

Figure 32

40

20

0

10 100 1 k

kSV

R −

Su

pp

ly-V

olt

age

Rej

ecti

on

Rat

io −

dB

60

80


100

10 k 100 k 1 M 10 M

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

kS

VR

VDD = 5 VTA = 25°C

kSVR+

kSVR −

−20

Figure 33

40

20

0

10 100 1 k

kSV

R −

Su

pp

ly-V

olt

age

Rej

ecti

on

Rat

io −

dB

60

80


100

10 k 100 k 1 M 10 M

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

kS

VR

VDD = ±5 VTA = 25°C

kSVR+

kSVR −

−20

Figure 34

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TYPICAL CHARACTERISTICSkS

VR

− S

up

ply

Vo

ltag

e R

ejec

tio

n R

atio

− d

B

SUPPLY VOLTAGE REJECTION RATIO†


kS

VR

TA − Free-Air Temperature − °C−75 −50 −25 0 25 50 75 100 125

100

95

90

85

105

110VDD ± = ±2.2 V to ±8 VVO = 0 V

Figure 35

0 1 2 3 4 5 6 7 80

0.6

1.2

1.8

2.4

3

IDD

− S

up

ply

Cu

rren

t −

mA

DD

I

|VDD ± | − Supply Voltage − V

VO = 0 VNo Load

TA = 25°C

TA = −55°C

TA = 125°C

Figure 36

TLC2272SUPPLY CURRENT†

vsSUPPLY VOLTAGE

Figure 37

0 1 2 3 4 5 6 7 80

1.2

2.4

3.6

4.8

6

IDD

− S

up

ply

Cu

rren

t −

mA

DD

I

|VDD ± | − Supply Voltage − V

VO = 0 VNo Load

TA = 25°C

TA = −55°C

TA = 125°C


vsSUPPLY VOLTAGE

Figure 38

−75 −50 −25 0 25 50 75 100 1250

0.6

1.2

1.8

2.4

3


IDD

− S

up

ply

Cu

rren

t −

mA

DD

I

VDD = 5 VVO = 2.5 V

VDD = ±5 VVO = 0 V




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�




Figure 39

−75 −50 −25 0 25 50 75 100 1250

1.2

2.4

3.6

4.8

6


IDD

− S

up

ply

Cu

rren

t −

mA

DD

I

VDD = 5 VVO = 2.5 V

VDD = ±5 VVO = 0 V



μs

SR

− S

lew

Rat

e −

V/

0

1

2

3

CL − Load Capacitance − pF

SLEW RATEvs

LOAD CAPACITANCE

10 k1 k10010

SR +

SR −

4

5VDD = 5 VAV = −1TA = 25°C

Figure 40

3

2

1

4

μsS

R −

Sle

w R

ate

− V

/

−75 −50 −25 0 25 50 75 100 125


SLEW RATE†


VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1

SR +

SR −

0

5

Figure 41

INVERTING LARGE-SIGNAL PULSE RESPONSE

2

1

01 2 3 4 5

3

4

5

6 7 8 9

VO

− O

utp

ut

Volt

age

− m

VV

O

t − Time − μs

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

0

Figure 42


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�




0

− 1

− 3

− 4

− 5

4

− 2

1 2 3 4 5

2

1

3

5

6 7 8 9

VO

− O

utp

ut

Volt

age

− V

V O

t − Time − μs

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

INVERTING LARGE-SIGNAL PULSE RESPONSE

0

Figure 43

3

2

1

01 2 3 4 5

4

5

6 7 8 9V

O −

Ou

tpu

t Vo

ltag

e −

VV

Ot − Time − μs

VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1TA = 25°C

VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE

0

Figure 44

VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE

0

−1

4

1 2 3 4 5

2

1

3

5

6 7 8 9

VO

− O

utp

ut

Volt

age

− V

VO

t − Time − μs

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1

0

−2

−3

−5

−4

Figure 45

INVERTING SMALL-SIGNAL PULSE RESPONSE

2.5

2.45

2.40.5 1 1.5 2 2.5

2.55

2.6

2.65

3.5 4.5 5 5.5

VO

− O

utp

ut

Volt

age

− V

VO

t − Time − μs

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

0 3 4

Figure 46

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�




0

−1000 0.5 1 1.5 2

50

100

2.5 3 3.5 4

VO

− O

utp

ut

Volt

age

− m

VV O

t − Time − μs

INVERTING SMALL-SIGNAL PULSE RESPONSE


−50

Figure 47

VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE

2.5

2.45

2.4

2.55

2.6

0 0.5 1 1.5

VO

− O

utp

ut

Volt

age

− V

VO

t − Time − μs

2.65VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1

Figure 48

VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE

0

−50

−100

50

100

0 0.5 1 1.5

VO

− O

utp

ut

Volt

age

− m

VV

O

t − Time − μs


Figure 49

20

10

010 100 1 k

Vn

− E

qu

ival

ent

Inp

ut

No

ise

Volt

age

− n

V H

z

30


40

10 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

50

60

Vn

nV

/H

z VDD = 5 VTA = 25°CRS = 20 Ω

Figure 50

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�




20

10

010 100 1 k

Vn

− E

qu

ival

ent

Inp

ut

No

ise

Volt

age

− n

V H

z

30


40

10 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

50

60

Vn

nV

/H

z

VDD = ±5 VTA = 25°CRS = 20 Ω

Figure 51

−750

−10002 4 6

0

250

8 10N

ois

e Vo

ltag

e −

nV

t − Time − s

NOISE VOLTAGEOVER A 10 SECOND PERIOD

0

VDD = 5 Vf = 0.1 Hz to 10 HzTA = 25°C

500

750

1000

−250

−500

Figure 52

Inte

gra

ted

No

ise

Volt

age

− u

VR

MS

1

0.1

100

1 10 100 1 k


INTEGRATED NOISE VOLTAGEvs

FREQUENCY

10 k 100 k

VR

MS

μ

Calculated UsingIdeal Pass-Band FilterLower Frequency = 1 HzTA= 25°C

10

Figure 53

0.0001

0.001

100 1 k 10 k 100 k

TH

D +

N −

To

tal H

arm

on

ic D

isto

rtio

n P

lus

No

ise

− %


TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.01

0.1

1VDD = 5 VTA = 25°CRL = 10 kΩ

AV = 100

AV = 10

AV = 1

Figure 54

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�




Figure 55

Gai

n-B

and

wid

th P

rod

uct

− M

Hz

2.1

20 1 2 3 4 5

2.2

2.3

6 7 8|VDD ±| − Supply Voltage − V

2.4

2.5

GAIN-BANDWIDTH PRODUCTvs

SUPPLY VOLTAGE

f = 10 kHzRL = 10 kΩCL = 100 pFTA = 25°C

Figure 56

−75 −50 −25 0 25 50 75 100 125TA − Free-Air Temperature − °C

Gai

n-B

and

wid

th P

rod

uct

− M

Hz

GAIN-BANDWIDTH PRODUCT†


1.8

1.6

1.4

2

2.4

2.2

2.6

2.8

3VDD = 5 Vf = 10 kHzRL = 10 kΩCL = 100 pF

10

om

− P

has

e M

arg

in

10000CL − Load Capacitance − pF

φm

PHASE MARGINvs

LOAD CAPACITANCE

1000100

VDD = ±5 VTA = 25°C

Rnull = 20 Ω

Rnull = 10 Ω

Rnull = 0

75°

60°

45°

30°

15°

0°

10 kΩ

10 kΩ

VDD −

VDD +Rnull

CL

VI

Rnull = 100 Ω

Rnull = 50 Ω

Figure 57 Figure 58

3

010

Gai

n M

arg

in −

dB

6

9

10000CL − Load Capacitance − pF

12

15

GAIN MARGINvs

LOAD CAPACITANCE

1000100

VDD = 5 VAV = 1RL = 10 kΩTA = 25°C


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�



APPLICATION INFORMATION

macromodel information

Macromodel information provided was derived using Microsim Parts™ , the model generation software usedwith Microsim PSpice™. The Boyle macromodel (see Note 5) and subcircuit in Figure 59 were generated usingthe TLC227x typical electrical and operating characteristics at TA = 25°C. Using this information, outputsimulations of the following key parameters can be generated to a tolerance of 20% (in most cases):

� Maximum positive output voltage swing� Maximum negative output voltage swing� Slew rate� Quiescent power dissipation� Input bias current� Open-loop voltage amplification

� Unity gain frequency� Common-mode rejection ratio� Phase margin� DC output resistance� AC output resistance� Short-circuit output current limit

NOTE 5: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journalof Solid-State Circuits, SC-9, 353 (1974).

OUT

+

−

+

−

+

−

+

−

+−

+

−

+

− +

−

+−

.SUBCKT TLC227x 1 2 3 4 5C1 11 1214E−12C2 6 760.00E−12DC 5 53DXDE 54 5DXDLP 90 91DXDLN 92 90DXDP 4 3DXEGND 99 0POLY (2) (3,0) (4,) 0 .5 .5FB 99 0POLY (5) VB VC VE VLP VLN 0+ 984.9E3 −1E6 1E6 1E6 −1E6GA 6 011 12 377.0E−6GCM 0 6 10 99 134E−9ISS 3 10DC 216.OE−6HLIM 90 0VLIM 1KJ1 11 210 JXJ2 12 110 JXR2 6 9100.OE3

RD1 60 112.653E3RD2 60 122.653E3R01 8 550R02 7 9950RP 3 44.310E3RSS 10 99925.9E3VAD 60 4−.5VB 9 0DC 0VC 3 53 DC .78VE 54 4DC .78VLIM 7 8DC 0VLP 91 0DC 1.9VLN 0 92DC 9.4.MODEL DX D (IS=800.0E−18).MODEL JX PJF (IS=1.500E−12BETA=1.316E-3+ VTO=−.270).ENDS

VCC +

RP

IN −2

IN+1

VCC −

VAD

RD1

11

J1 J2

10

RSS ISS

3

12

RD2

60

VE

54DE

DP

VC

DC

4

C1

53

R2

6

9

EGND

VB

FB

C2

GCM GA VLIM

8

5

RO1

RO2

HLIM

90

DIP

91

DIN

92

VINVIP

99

7

Figure 59. Boyle Macromodel and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.

Macromodels, simulation models, or other models provided by TI,directly or indirectly, are not warranted by TI as fully representing allof the specification and operating characteristics of thesemiconductor product to which the model relates.

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TLC2272AQDRG4Q1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TLC2272AQDRQ1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLC2272AQPWRG4Q1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)


TLC2272AQPWRQ1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)


TLC2272QDRG4Q1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLC2272QDRQ1 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLC2272QPWRG4Q1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)


TLC2272QPWRQ1 ACTIVE TSSOP PW 8 2000 Green (RoHS& no Sb/Br)


TLC2274AQDRG4Q1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)


TLC2274AQDRQ1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)


TLC2274AQPWRG4Q1 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)


TLC2274AQPWRQ1 ACTIVE TSSOP PW 14 2000 TBD CU NIPDAU Level-1-250C-UNLIM

TLC2274QDRG4Q1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)


TLC2274QDRQ1 ACTIVE SOIC D 14 2500 Green (RoHS& no Sb/Br)


TLC2274QPWRG4Q1 ACTIVE TSSOP PW 14 2000 Green (RoHS& no Sb/Br)


TLC2274QPWRQ1 ACTIVE TSSOP PW 14 2000 TBD CU NIPDAU Level-1-250C-UNLIM (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

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Addendum-Page 2

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TLC2272-Q1, TLC2272A-Q1, TLC2274-Q1, TLC2274A-Q1 :

• Catalog: TLC2272, TLC2272A, TLC2274, TLC2274A

• Enhanced Product: TLC2272A-EP, TLC2274-EP, TLC2274A-EP

• Military: TLC2272M, TLC2272AM, TLC2274M, TLC2274AM

NOTE: Qualified Version Definitions:

• Catalog - TI's standard catalog product

• Enhanced Product - Supports Defense, Aerospace and Medical Applications

• Military - QML certified for Military and Defense Applications

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Documents

Advanced LinCMOS Rail-to-Rail Operational Amplifier (Rev. D) · TS274, TLC272, and TLC274Common-Mode Input Voltage Range Includes Negative Rail High-Gain Bandwidth. . . 2.2 MHz Typ