ˆ ˘ ˇgroups.ist.utl.pt/lee/SUBA/Suba_files/tlc2274-ep.pdf · TS274, TLC272, and TLC274 description The TLC2272A and TLC2274A are dual and quadruple operational amplifiers from

SGLS131B − JULY 2002 − REVISED DECEMBER 2003

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Controlled Baseline− One Assembly/Test Site, One Fabrication

Site

Extended Temperature Performance of−55°C to 125°C

Enhanced Diminishing ManufacturingSources (DMS) Support

Enhanced Product Change Notification

Qualification Pedigree †

Output Swing Includes Both Supply Rails† Component qualification in accordance with JEDEC and industry

standards to ensure reliable operation over an extendedtemperature range. This includes, but is not limited to, HighlyAccelerated Stress Test (HAST) or biased 85/85, temperaturecycle, autoclave or unbiased HAST, electromigration, bondintermetallic life, and mold compound life. Such qualificationtesting should not be viewed as justifying use of this componentbeyond specified performance and environmental limits.

Low Noise . . . 9 nV/√Hz Typ at f = 1 kHz

Low Input Bias Current . . . 1 pA Typ

Fully Specified for Both Single-Supply andSplit-Supply Operation

Common-Mode Input Voltage RangeIncludes Negative Rail

High-Gain Bandwidth . . . 2.2 MHz Typ

High Slew Rate . . . 3.6 V/µs Typ

Low Input Offset Voltage 950 µV Max at TA = 25°C

Macromodel Included

Performance Upgrades for the TS272,TS274, TLC272, and TLC274

description

The TLC2272A and TLC2274A are dual andquadruple operational amplifiers from TexasInstruments. Both devices exhibit rail-to-railoutput performance for increased dynamic rangein single- or split-supply applications. TheTLC227xA family offers 2 MHz of bandwidth and3 V/µs of slew rate for higher speed applications.These devices offer comparable ac performancewhile having better noise, input offset voltage, andpower dissipation than existing CMOSoperational amplifiers. The TLC227xA has a noisevoltage of 9 nV/√Hz, two times lower thancompetitive solutions.

The TLC227xA, exhibiting high input impedanceand low noise, is excellent for small-signalconditioning for high-impedance sources, such aspiezoelectric transducers. Because of the micro-power dissipation levels, these devices work wellin hand-held monitoring and remote-sensingapplications. In addition, the rail-to-rail outputfeature, with single- or split-supplies, makes thisfamily a great choice when interfacing with analog-to-digital converters (ADCs). For precision applications, theTLC227xA family has a maximum input offset voltage of 950 µV. This family is fully characterized at 5 V and±5 V.

The TLC2272/4 also makes great upgrades to the TLC272/4 or TS272/4 in standard designs. They offerincreased output dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature setallows them to be used in a wider range of applications.

Copyright 2003 Texas Instruments Incorporated !" # $" # %$&'" "($"# ! " #%"# % ") "!# # #"$!"##" *"+( $" %##, # " ##'+ '$"#", '' %!"#(

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Advanced LinCMOS is a trademark of Texas Instruments.

|VDD±| − Supply Voltage − V

10

8

6

44 6 8

12

14

16

10 12 14 16

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

SUPPLY VOLTAGE

TA = 25°C

IO = ±50 µA

IO = ±500 µA

V(O

PP

) −

Max

imum

Pea

k-to

-Pea

k O

utpu

t Vol

tage

− V

VO

(PP

)

Copyright 2002 − 2003, Texas Instruments Incorporated !" # $" # %$&'" "($"# ! " #%"# % ") "!# # #"$!"##" *"+( $" %##, # " ##'+ '$"#", '' %!"#(

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Advanced LinCMOS is a trademark of Texas Instruments.

SGLS131A − JULY 2002 − REVISED NOVEMBER 2003

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

AVAILABLE OPTIONS

PACKAGED DEVICES

TAVIOmax At

25°CSMALL

OUTLINE(D)

TSSOP(PW)

−55°C to 125°C950 µV TLC2272AMDREP TLC2272AMPWREP

−55°C to 125°C950 µV2.5 mV

TLC2272AMDREPTLC2272MDREP

TLC2272AMPWREPTLC2272MPWREP

−55°C to 125°C950 µV TLC2274AMDREP TLC2274AMPWREP

−55°C to 125°C950 µV2.5 mV

TLC2274AMDREPTLC2274MDREP

TLC2274AMPWREPTLC2274MPWREP

1

2

3

4

8

7

6

5

1OUT1IN−1IN+

VDD−/GND

VDD+2OUT2IN−2IN+

TLC2272D OR PW PACKAGE

(TOP VIEW)

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN−1IN+

VDD+2IN+2IN−

2OUT

4OUT4IN−4IN+VDD−3IN+3IN−3OUT

TLC2274D OR PW PACKAGE

(TOP VIEW)



equivalent schematic (each amplifier)

Q3 Q6 Q9 Q12 Q14 Q16

Q2 Q5 Q7 Q8 Q10 Q11

D1

Q17Q15Q13

Q4Q1

R5

C1

VDD+

IN+

IN−

R3 R4 R1 R2

OUT

VDD−

ACTUAL DEVICE COMPONENT COUNT †

COMPONENT TLC2272 TLC2274

Transistors 38 76

Resistors 26 52

Diodes 9 18

Capacitors 3 6† Includes both amplifiers and all ESD, bias, and trim circuitry



absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †

Supply voltage, VDD+ (see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VDD− (see Note 1) −8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±16 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input, see Note 1) VDD− − 0.3 V to VDD+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (any input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VDD− ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA −55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range (see Note 4) −65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or PW package 260°C. . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD −.2. Differential voltages are at IN+ with respect to IN−. Excessive current will flow if input is brought below VDD− − 0.3 V.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.4. Long term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction

of overall device life. See http://www.ti.com/ep_quality for additional information on enhanced plastic packaging.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C TA = 125°C

PACKAGETA ≤ 25 C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA = 70 CPOWER RATING



D-8 725 mW 5.8 mW/°C 464 mW 337 mW 145 mW

D-14 950 mW 7.6 mW/°C 608 mW 494 mW 190 mW

PW-8 525 mW 4.2 mW/°C 336 mW 273 mW 105 mW

PW-14 700 mW 5.6 mW/°C 448 mW 364 mW —

recommended operating conditions

MIN MAX UNITMIN MAX UNIT

Supply voltage, VDD± ±2.2 ±8 V

Input voltage, VI VDD− VDD+ −1.5 V

Common-mode input voltage, VIC VDD− VDD+ −1.5 V

Operating free-air temperature, TA −55 125 °C



TLC2272-EP electrical characteristics at specified free-air temperature, V DD = 5 V (unlessotherwise noted)

PARAMETER TEST CONDITIONS TA†TLC2272-EP TLC2272A-EP

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT

VIO Input offset voltage25°C 300 2500 300 950

µVVIO Input offset voltageFull range 3000 1500

µV

αVIOTemperature coefficient 25°C

2 2 µV/°CαVIOTemperature coefficientof input offset voltage

25 Cto 125°C 2 2 µV/°C

Input offset voltage long-term drift (see Note 5)

VIC = 0 V,VO = 0 V,

VDD± = ±2.5 V,RS = 50 Ω

25°C 0.002 0.002 µV/mo

IIO Input offset current

VO = 0 V, RS = 50 Ω25°C 0.5 60 0.5 60

pAIIO Input offset currentFull range 800 800

pA

IIB Input bias current25°C 1 60 1 60

pAIIB Input bias currentFull range 800 800

pA

VICRCommon-mode input

RS = 50 Ω |VIO | ≤ 5 mV

25°C0

to 4−0.3

to 4.20

to 4−0.3

to 4.2VVICR

Common-mode inputvoltage

RS = 50 Ω, |VIO | ≤ 5 mVFull range

0to 3.5

0to 3.5

V

IOH = −20 µA 25°C 4.99 4.99

High-level output IOH = −200 µA25°C 4.85 4.93 4.85 4.93

VOHHigh-level outputvoltage

IOH = −200 µAFull range 4.85 4.85 VVOH voltage

IOH = −1 mA25°C 4.25 4.65 4.25 4.65

V

IOH = −1 mAFull range 4.25 4.25

VIC = 2.5 V, IOL = 50 µA 25°C 0.01 0.01

VIC = 2.5 V, IOL = 500 µA25°C 0.09 0.15 0.09 0.15

VOL Low-level output voltageVIC = 2.5 V, IOL = 500 µA

Full range 0.15 0.15 VVOL Low-level output voltage

VIC = 2.5 V, IOL = 5 A25°C 0.9 1.5 0.9 1.5

V

VIC = 2.5 V, IOL = 5 AFull range 1.5 1.5

Large-signal VIC = 2.5 V, RL = 10 kΩ‡

25°C 10 35 10 35

AVD

Large-signal differential voltage

VIC = 2.5 V,VO = 1 V to 4 V

RL = 10 kΩ‡Full range 10 10 V/mVAVD differential voltage

amplificationVO = 1 V to 4 V

RL = 1 mΩ‡ 25°C 175 175

V/mV

ridDifferential inputresistance

25°C 1012 1012 Ω

riCommon-mode inputresistance

25°C 1012 1012 Ω

ciCommon-mode inputcapacitance

f = 10 kHz, P package 25°C 8 8 pF

zoClosed-loop outputimpedance

f = 1 MHz, AV = 10 25°C 140 140 Ω

CMRRCommon-mode rejection VIC = 0 V to 2.7 V, 25°C 70 75 70 75

dBCMRRCommon-mode rejectionratio

VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70

dB

kSVRSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95

dBkSVRSupply-voltage rejectionratio (∆VDD/∆VIO)

VDD = 4.4 V to 16 V, VIC = VDD/2, No load Full range 80 80

dB

IDD Supply current VO = 2.5 V, No load25°C 2.2 3 2.2 3

mAIDD Supply current VO = 2.5 V, No loadFull range 3 3

mA

† Full range is −55°C to 125°C for M level part.‡ Referenced to 2.5 VNOTE 5: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.



TLC2272-EP operating characteristics at specified free-air temperature, V DD = 5 V



UNIT

Slew rate at VO = 1.25 V to 2.75 V, 25°C 2.3 3.6 2.3 3.6

SRSlew rate atunity gain

VO = 1.25 V to 2.75 V, RL = 10 kΩ‡, CL = 100 pF‡ Full

1.7 1.7V/µsSR

unity gain RL = 10 kΩ‡, CL = 100 pF‡ Fullrange 1.7 1.7

V/µs

VnEquivalent input f = 10 Hz 25°C 50 50

nV/√HzVnEquivalent inputnoise voltage f = 1 kHz 25°C 9 9

nV/√Hz

VNPP

Peak-to-peakequivalent input

f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input

noise voltage f = 0.1 Hz to 10 Hz 25°C 1.4 1.4µV

InEquivalent inputnoise current

25°C 0.6 0.6 fA/√Hz

Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%

THD + NTotal harmonicdistortion plusnoise

VO = 0.5 V to 2.5 V,f = 20 kHz,R = 10 k ‡,

AV = 10 25°C 0.004% 0.004%THD + N distortion plusnoise

f = 20 kHz,RL = 10 kΩ‡, AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2.18 2.18 MHz

Gain-bandwidthproduct

f = 10 kHz,CL = 100 pF‡

RL = 10 kΩ‡,25°C 2.18 2.18 MHz

BOMMaximum output- VO(PP) = 2 V,

‡AV = 1,

‡ 25°C 1 1 MHzBOMMaximum output-swing bandwidth

VO(PP) = 2 V,RL = 10 kΩ‡,

AV = 1,CL = 100 pF‡ 25°C 1 1 MHz

AV = −1,To 0.1% 1.5 1.5

ts Settling time

AV = −1,Step = 0.5 V to 2.5 V,

‡

To 0.1%25°C

1.5 1.5sts Settling time

Step = 0.5 V to 2.5 V,RL = 10 kΩ‡,

‡ To 0.01%25°C

2.6 2.6µss RL = 10 kΩ‡,

CL = 100 pF‡ To 0.01% 2.6 2.6

φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡

25°C 50° 50°

Gain margin

RL = 10 kΩ‡, CL = 100 pF‡

25°C 10 10 dB† Full range is −55°C to 125°C for M level part.‡ Referenced to 2.5 V



TLC2272-EP electrical characteristics at specified free-air temperature, V DD± = ±5 V (unlessotherwise noted)



UNIT



µV

αVIOTemperature coefficient of 25°C

2 2 µV/°CαVIOTemperature coefficient ofinput offset voltage

25 Cto 125°C 2 2 µV/°C

Input offset voltagelong-term drift (see Note 5)

VIC = 0 V,RS = 50 Ω

VO = 0 V, 25°C 0.002 0.002 µV/mo


S

25°C 0.5 60 0.5 60pAIIO Input offset current

Full range 800 800pA



pA

25 C−5 −5.3 −5 −5.3

Common-mode input25°C −5

to 4−5.3

to 4.2−5

to 4−5.3

to 4.2VICR

Common-mode inputRS = 50 Ω |VIO | ≤ 5 mV

25 Cto 4 to 4.2 to 4 to 4.2

VVICRCommon-mode inputvoltage


−5 −5VVICR voltage

RS = 50 , |VIO | 5 mVFull range

−5to 3.5

−5to 3.5

VFull range

to 3.5 to 3.5

IO = −20 µA 25°C 4.99 4.99

Maximum positive peak IO = −200 µA25°C 4.85 4.93 4.85 4.93

VOM+Maximum positive peakoutput voltage

IO = −200 µAFull range 4.85 4.85 VVOM+ output voltage

IO = −1 mA25°C 4.25 4.65 4.25 4.65

V

IO = −1 mAFull range 4.25 4.25

VIC = 0 V, IO = 50 µA 25°C −4.99 −4.99

Maximum negative peak VIC = 0 V, IO = 500 µA25°C −4.85 −4.91 −4.85 −4.91

VOM−Maximum negative peakoutput voltage

VIC = 0 V, IO = 500 µAFull range −4.85 −4.85 VVOM− output voltage

VIC = 0 V, IO = 5 A25°C −3.5 −4.1 −3.5 −4.1

V

VIC = 0 V, IO = 5 AFull range −3.5 −3.5

Large-signal differential RL = 10 kΩ25°C 20 50 20 50

AVDLarge-signal differentialvoltage amplification VO = ±4 V

RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO = ±4 V

RL = 1 mΩ 25°C 300 300

V/mV

rid Differential input resistance 25°C 1012 1012 Ω


25°C 1012 1012 Ω


f = 10 kHz, P package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 130 130 Ω

CMRRCommon-mode rejection VIC = −5 V to 2.7 V, 25°C 75 80 75 80


VIC = −5 V to 2.7 V, VO = 0 V, RS = 50 Ω Full range 75 75

dB

kSVRSupply-voltage rejection VDD = ±2.2 V to ±8 V, 25°C 80 95 80 95

dBkSVRSupply-voltage rejectionratio (∆VDD± /∆VIO)

VDD = ±2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80

dB



mA

† Full range is −55°C to 125°C for M level part.NOTE 5: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated




TLC2272-EP operating characteristics at specified free-air temperature, V DD± = ±5 V



UNIT

Slew rate at VO = ±1 V, RL = 10 kΩ,25°C 2.3 3.6 2.3 3.6

SRSlew rate atunity gain

VO = ±1 V, RL = 10 kΩ,CL = 100 pF Full

1.7 1.7V/µsSR

unity gain CL = 100 pF Fullrange 1.7 1.7

V/µs



nV/√Hz

VNPP


f = 0.1 Hz to 1 Hz 25°C 1 1VVNPP equivalent input



25°C 0.6 0.6 fA/√Hz

Total harmonic VO = ±2.3 V AV = 1 0.0011% 0.0011%


VO = ±2.3 VRL = 10 kΩ,f = 20 kHz


RL = 10 kΩ,f = 20 kHz AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2.25 2.25 MHz


f = 10 kHz,CL = 100 pF

RL = 10 kΩ,25°C 2.25 2.25 MHz

BOM

Maximumoutput-swing

VO(PP) = 4.6 V, AV = 1,25°C 0.54 0.54 MHzBOM output-swing

bandwidth

VO(PP) = 4.6 V,RL = 10 kΩ,

AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz

AV = −1,To 0.1% 1.5 1.5

ts Settling time

AV = −1,Step = −2.3 V to 2.3 V,

To 0.1%25°C


Step = −2.3 V to 2.3 V,RL = 10 kΩ,

To 0.01%25°C

3.2 3.2µss RL = 10 kΩ,

CL = 100 pF To 0.01% 3.2 3.2

φmPhase margin atunity gain RL = 10 kΩ, CL = 100 pF

25°C 52° 52°

Gain marginRL = 10 kΩ, CL = 100 pF

25°C 10 10 dB

† Full range is −55°C to 125°C for M level part.



TLC2274-EP electrical characteristics at specified free-air temperature, V DD = 5 V (unlessotherwise noted)



UNIT



µV

αVIOTemperature coefficient 25°C

2 2 µV/°CαVIOTemperature coefficientof input offset voltage

25 Cto 125°C 2 2 µV/°C

Input offset voltagelong-term drift(see Note 5)

VDD± = ±2.5 V,VO = 0 V,

VIC = 0 V,RS = 50 Ω

25°C 0.002 0.002 µV/mo


O S

25°C 0.5 60 0.5 60pAIIO Input offset current

Full range 800 800pA



pA

25 C0 −0.3 0 −0.3

Common-mode input25°C 0

to 4−0.3

to 4.20

to 4−0.3

to 4.2VICR

Common-mode inputRS = 50 Ω |VIO | ≤ 5 mV

25 Cto 4 to 4.2 to 4 to 4.2

VVICRCommon-mode inputvoltage


0 to 0 toVVICR voltage

RS = 50 , |VIO | 5 mVFull range

0 to3.5

0 to3.5

VFull range

3.5 3.5

IOH = −20 µA 25°C 4.99 4.99

High-level output IOH = −200 µA25°C 4.85 4.93 4.85 4.93

VOHHigh-level outputvoltage

IOH = −200 µAFull range 4.85 4.85 VVOH voltage

IOH = −1 mA25°C 4.25 4.65 4.25 4.65

V

IOH = −1 mAFull range 4.25 4.25

VIC = 2.5 V, IOL = 50 µA 25°C 0.01 0.01

Low-level outputVIC = 2.5 V, 25°C 0.09 0.15 0.09 0.15

VOLLow-level outputvoltage

VIC = 2.5 V,IOL = 500 µA Full range 0.15 0.15 VVOL voltage

VIC = 2.5 V, IOL = 5 A25°C 0.9 1.5 0.9 1.5

V

VIC = 2.5 V, IOL = 5 AFull range 1.5 1.5

Large-signal differential VIC = 2.5 V, RL = 10 kΩ‡25°C 10 35 10 35

AVDLarge-signal differentialvoltage amplification

VIC = 2.5 V,VO = 1 V to 4 V

RL = 10 kΩ‡Full range 10 10 V/mVAVD voltage amplification VO = 1 V to 4 V

RL = 1 MΩ‡ 25°C 175 175

V/mV

ridDifferential inputresistance

25°C 1012 1012 Ω


25°C 1012 1012 Ω


f = 10 kHz, N package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 140 140 Ω

CMRRCommon-mode VIC = 0 V to 2.7 V, 25°C 70 75 70 75

dBCMRRCommon-mode rejection ratio

VIC = 0 V to 2.7 V,VO = 2.5 V, RS = 50 Ω Full range 70 70

dB

kSVRSupply-voltage rejection VDD = 4.4 V to 16 V, 25°C 80 95 80 95

dBkSVRSupply-voltage rejectionratio (∆VDD/∆VIO)

VDD = 4.4 V to 16 V,VIC = VDD/2, No load Full range 80 80

dB



mA

† Full range is −55°C to 125°C for M level part.‡ Referenced to 2.5 VNOTE 5: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated




TLC2274-EP operating characteristics at specified free-air temperature, V DD = 5 V



UNIT

Slew rate at unity VO = 0.5 V to 2.5 V, CL = 100 pF‡25°C 2.3 3.6 2.3 3.6

SRSlew rate at unitygain

VO = 0.5 V to 2.5 V,RL = 10 kΩ‡,

CL = 100 pF‡Full

1.7 1.7V/µsSR

gain RL = 10 kΩ‡, Fullrange 1.7 1.7

V/µs



nV/√Hz

VN(PP)


f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input



25°C 0.6 0.6 fA /√Hz

Total harmonic VO = 0.5 V to 2.5 V, AV = 1 0.0013% 0.0013%


VO = 0.5 V to 2.5 V,f = 20 kHz,R = 10 k ‡


f = 20 kHz,RL = 10 kΩ‡

AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ‡,25°C 2.18 2.18 MHz


f = 10 kHz,CL = 100 pF‡

RL = 10 kΩ‡,25°C 2.18 2.18 MHz

BOM

Maximum out-put-swing band-

VO(PP) = 2 V,‡

AV = 1,‡ 25°C 1 1 MHzBOM put-swing band-

width

VO(PP) = 2 V,RL = 10 kΩ‡,

AV = 1,CL = 100 pF‡ 25°C 1 1 MHz

AV = −1,To 0.1% 1.5 1.5

ts Settling time

AV = −1,Step = 0.5 V to 2.5 V,

‡

To 0.1%25°C


Step = 0.5 V to 2.5 V,RL = 10 kΩ‡,

‡ To 0.01%25°C

2.6 2.6µss RL = 10 kΩ‡,

CL = 100 pF‡ To 0.01% 2.6 2.6

φmPhase margin atunity gain RL = 10 kΩ‡, CL = 100 pF‡

25°C 50° 50°

Gain marginRL = 10 kΩ‡, CL = 100 pF‡

25°C 10 10 dB

† Full range is −55°C to 125°C for M level part.‡ Referenced to 2.5 V



TLC2274-EP electrical characteristics at specified free-air temperature, V DD± = ±5 V (unlessotherwise noted)



UNIT


VVIO Input offset voltageFull range 3000 1500

µV

VIOTemperature coefficient of 25°C

2 2 V/°CαVIOTemperature coefficient ofinput offset voltage

25 Cto 125°C 2 2 µV/°C

Input offset voltage long-term drift (see Note 5)

VIC = 0 V,RS = 50 Ω

VO = 0 V, 25°C 0.002 0.002 µV/mo


RS = 50 Ω25°C 0.5 60 0.5 60

pAIIO Input offset currentFull range 800 800

pA



pA

−5 −5.3 −5 −5.3

Common-mode input25°C

−5to 4

−5.3to 4.2

−5to 4

−5.3to 4.2

VICRCommon-mode input

RS = 50 Ω |VIO | ≤ 5 mV25°C to 4 to 4.2 to 4 to 4.2

VVICRCommon-mode inputvoltage RS = 50 Ω, |VIO | ≤ 5 mV

−5 −5VVICR voltage RS = 50 , |VIO | 5 mV

Full range−5

to 3.5−5

to 3.5

VFull range to 3.5 to 3.5

IO = −20 µA 25°C 4.99 4.99

Maximum positive peak IO = −200 A25°C 4.85 4.93 4.85 4.93

VOM+Maximum positive peakoutput voltage

IO = −200 µAFull range 4.85 4.85 VVOM+ output voltage

IO = −1 mA25°C 4.25 4.65 4.25 4.65

V

IO = −1 mAFull range 4.25 4.25

VIC = 0 V, IO = 50 µA 25°C −4.99 −4.99

Maximum negative peak VIC = 0 V, IO = 500 A25°C −4.85 −4.91 −4.85 −4.91

VOM−Maximum negative peakoutput voltage

VIC = 0 V, IO = 500 µAFull range −4.85 −4.85 VVOM− output voltage

VIC = 0 V, IO = 5 A25°C −3.5 −4.1 −3.5 −4.1

V

VIC = 0 V, IO = 5 AFull range −3.5 −3.5

Large-signal differential RL = 10 kΩ25°C 20 50 20 50

AVDLarge-signal differentialvoltage amplification VO = ±4 V

RL = 10 kΩFull range 20 20 V/mVAVD voltage amplification VO = ±4 V

RL = 1 MΩ 25°C 300 300

V/mV

rid Differential input resistance 25°C 1012 1012 Ω

riCommon-mode input resistance

25°C 1012 1012 Ω


f = 10 kHz, N package 25°C 8 8 pF


f = 1 MHz, AV = 10 25°C 130 130 Ω

CMRRCommon-mode rejection VIC = −5 V to 2.7 V 25°C 75 80 75 80


VIC = −5 V to 2.7 VVO = 0 V, RS = 50 Ω Full range 75 75

dB

kSVRSupply-voltage rejection VDD± = ± 2.2 V to ±8 V, 25°C 80 95 80 95

dBkSVRSupply-voltage rejectionratio (∆VDD± /∆VIO)

VDD± = ± 2.2 V to ±8 V,VIC = 0 V, No load Full range 80 80

dB

IDD Supply current VO = 0 V, No load25°C 4.8 6 4.8 6

mAIDD Supply current VO = 0 V, No loadFull range 6 6

mA

† Full range is −55°C to 125°C for M level part.NOTE 5: Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated




TLC2274-EP operating characteristics at specified free-air temperature, V DD± = ±5 V



UNIT

Slew rate at unity VO = ±2.3 V, RL = 10 kΩ,25°C 2.3 3.6 2.3 3.6

SRSlew rate at unitygain

VO = ±2.3 V,CL = 100 pF

RL = 10 kΩ,Full

1.7 1.7V/µsSR

gain CL = 100 pF Fullrange 1.7 1.7

V/µs



nV/√Hz

VN(PP)


f = 0.1 Hz to 1 Hz 25°C 1 1VVN(PP) equivalent input



25°C 0.6 0.6 fA /√Hz

Total harmonic VO = ±2.3 V, AV = 1 0.0011% 0.0011%


VO = ±2.3 V,RL = 10 kΩ,f = 20 kHz


RL = 10 kΩ,f = 20 kHz AV = 100

25 C

0.03% 0.03%

Gain-bandwidth f = 10 kHz, RL = 10 kΩ,25°C 2.25 2.25 MHz


f = 10 kHz,CL = 100 pF

RL = 10 kΩ,25°C 2.25 2.25 MHz

BOM

Maximumoutput-swing

VO(PP) = 4.6 V, AV = 1,25°C 0.54 0.54 MHzBOM output-swing

bandwidth

VO(PP) = 4.6 V,RL = 10 kΩ,

AV = 1,CL = 100 pF 25°C 0.54 0.54 MHz

AV = −1,To 0.1% 1.5 1.5

ts Settling time

AV = −1,Step = −2.3 V to 2.3 V,

To 0.1%25°C


Step = −2.3 V to 2.3 V,RL = 10 kΩ,

To 0.01%25°C

3.2 3.2µss RL = 10 kΩ,

CL = 100 pF To 0.01% 3.2 3.2

φmPhase margin atunit gain RL = 10 kΩ, CL = 100 pF

25°C 52° 52°

Gain marginRL = 10 kΩ, CL = 100 pF

25°C 10 10 dB

† Full range is −55°C to 125°C for M level part.



TYPICAL CHARACTERISTICS

Table of GraphsFIGURE

VIO Input offset voltageDistribution 1 − 4

VIO Input offset voltageDistributionvs Common-mode voltage

1 − 45, 6

αVIO Input offset voltage temperature coefficient Distribution 7 − 10

IIB /IIO Input bias and input offset current vs Free-air temperature 11

VI Input voltagevs Supply voltage 12

VI Input voltagevs Supply voltagevs Free-air temperature

1213

VOH High-level output voltage vs High-level output current 14

VOL Low-level output voltage vs Low-level output current 15, 16

VOM+ Maximum positive peak output voltage vs Output current 17

VOM− Maximum negative peak output voltage vs Output current 18

VO(PP) Maximum peak-to-peak output voltage vs Frequency 19

IOS Short-circuit output currentvs Supply voltage 20

IOS Short-circuit output currentvs Supply voltagevs Free-air temperature

2021

VO Output voltage vs Differential input voltage 22, 23

Large-signal differential voltage amplification vs Load resistance 24

AVDLarge-signal differential voltage amplificationand phase margin

vs Frequency 25, 26

Large-signal differential voltage amplification vs Free-air temperature 27, 28

zo Output impedance vs Frequency 29, 30

CMRR Common-mode rejection ratiovs Frequency 31

CMRR Common-mode rejection ratiovs Frequencyvs Free-air temperature

3132

kSVR Supply-voltage rejection ratiovs Frequency 33, 34

kSVR Supply-voltage rejection ratiovs Frequencyvs Free-air temperature

33, 3435

IDD Supply currentvs Supply voltage 36, 37

IDD Supply currentvs Supply voltagevs Free-air temperature

36, 3738, 39

SR Slew ratevs Load capacitance 40

SR Slew ratevs Load capacitancevs Free-air temperature

4041

Inverting large-signal pulse response 42, 43

VOVoltage-follower large-signal pulse response 44, 45

VO Inverting small-signal pulse response 46, 47

Voltage-follower small-signal pulse response 48, 49

Vn Equivalent input noise voltage vs Frequency 50, 51

Noise voltage over a 10-second period 52

Integrated noise voltage vs Frequency 53

THD + N Total harmonic distortion plus noise vs Frequency 54

Gain-bandwidth productvs Supply voltage 55

Gain-bandwidth productvs Supply voltagevs Free-air temperature

5556

φm Phase margin vs Load capacitance 57

Gain margin vs Load capacitance 58

NOTE: For all graphs where VDD = 5 V, all loads are referenced to 2.5 V.




VIO − Input Offset Voltage − mV

Per

cent

age

of A

mpl

ifier

s −

%

DISTRIBUTION OF TLC2272INPUT OFFSET VOLTAGE

10

5

0

20

15

−1.6 −1.2 0 0.4 0.8 1.2 1.6

891 Amplifiers From

−0.8 −0.4

2 Wafer LotsVDD = ±2.5 V

TA = 25°C

Figure 1


Per

cent

age

of A

mpl

ifier

s −

%


10

5

0

20

15

−1.6 −1.2 0 0.4 0.8 1.2 1.6−0.8 −0.4

891 Amplifiers From2 Wafer LotsVDD = ±5 VTA = 25°C

Figure 2

Figure 3


Per

cent

age

of A

mpl

ifier

s −

%


10

5

0

20

15

0 0.4 0.8 1.2 1.6

992 Amplifiers From

−1.6 −1.2 −0.8 −0.4

2 Wafer LotsVDD = ±2.5 V

Figure 4


Per

cent

age

of A

mpl

ifier

s −

%


10

5

0

20

15

0 0.4 0.8 1.2 1.6

992 Amplifiers From

−1.6 −1.2 −0.8 −0.4

2 Wafer LotsVDD = ±5 V




0.5

0

−1−1 0 1

VIO

− In

put O

ffset

Vol

tage

− m

V

1

2 3 4 5

VIO

VIC − Common-Mode Voltage − V

VDD = 5 VTA = 25°CRS = 50 Ω

−0.5

INPUT OFFSET VOLTAGEvs

COMMON-MODE VOLTAGE

Figure 5

0.5

0

−1−1 0 1

VIO

− In

put O

ffset

Vol

tage

− m

V

1

2 3 4 5

INPUT OFFSET VOLTAGEvs

COMMON-MODE VOLTAGE

VIC − Common-Mode Voltage − V

VIO −0.5

VDD = ±5 VTA = 25°CRS = 50 Ω

−6 −5 −4 −3 −2

Figure 6

15

10

5

0−1 0 1

Per

cent

age

of A

mpl

ifier

s −

%

20

25

2 3 4 5

DISTRIBUTION OF TLC2272vs

INPUT OFFSET VOLTAGE TEMPERATURECOEFFICIENT†

αVIO − Temperature Coefficient − µV/°C

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VP Package25°C to 125°C

−5 −4 −3 −2

Figure 7

−5 −4 −3 −2

15

10

5

0−1 0 1

Per

cent

age

of A

mpl

ifier

s −

%

20

25

2 3 4 5




128 Amplifiers From2 Wafer LotsVDD = ±5 VP Package25°C to 125°C

Figure 8

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.




15

10

5

00 1

Per

cent

age

of A

mpl

ifier

s −

%

20

25

2 3 4 5




−5 −4 −3 −2 −1

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C

Figure 9

15

10

5

0

Per

cent

age

of A

mpl

ifier

s −

%

20

25




0 1 2 3 4 5−5 −4 −3 −2 −1

128 Amplifiers From2 Wafer LotsVDD = ±2.5 VN PackageTA = 25°C to 125°C

Figure 10

15

10

5

025 45 65 85

20

25

30

105 125

INPUT BIAS AND INPUT OFFSET CURRENT †

vsFREE-AIR TEMPERATURE

TA − Free-Air Temperature − °C

35VDD = ±2.5 VVIC = 0 VVO = 0 VRS = 50 Ω

IIB

IIO

IIB a

nd II

O −

Inpu

t Bia

s an

d In

put O

ffset

Cur

rent

s −

pAIBI

I IO

Figure 11

0

− 2

− 6

− 8

− 10

8

− 4

2 3 4 5 6 7 8

− In

put V

olta

ge −

V 4

2

6

10

INPUT VOLTAGEvs

SUPPLY VOLTAGE


VI

TA = 25°C RS = 50 Ω

|VIO| ≤ 5mV

12

Figure 12





−75 − 25 0 25 50 75 100 125

2

1

0

−1

3

4

5

− In

put V

olta

ge −

VV

I

INPUT VOLTAGE†



|VIO| ≤ 5mV

VDD = 5 V

− 50

Figure 13

V0H

− H

igh-

Leve

l Out

put V

olta

ge −

VV

OH

IOH − High-Level Output Current − mA

4

2

1

0

6

3

0 1 2 3 4

5

HIGH-LEVEL OUTPUT VOLTAGE †

vsHIGH-LEVEL OUTPUT CURRENT

VDD = 5 V

TA = 125°C

TA = −55°C

TA = 25°C

Figure 14

VO

L −

Low

-Lev

el O

utpu

t Vol

tage

− V

0.6

0.4

0.2

00 1 2 3

0.8

4 5

VDD = 5 VTA = 25°C

IOL − Low-Level Output Current − mA

VO

L

VIC = 1.25 V

LOW-LEVEL OUTPUT VOLTAGEvs

LOW-LEVEL OUTPUT CURRENT

1

1.2

VIC = 2.5 V

Figure 15

VIC = 0 V

LOW-LEVEL OUTPUT VOLTAGE †

vsLOW-LEVEL OUTPUT CURRENT

VO

L −

Low

-Lev

el O

utpu

t Vol

tage

− V

IOL − Low-Level Output Current − mA

VO

L

0.6

0.4

0.2

00 1 2 3

0.8

4

1

1.2

5 6

1.4VDD = 5 V VIC = 2.5 V

TA = 125°C

TA = 25°C

TA = −55°C

Figure 16





3

2

10 1 2 3 4 5

− M

axim

um P

ositi

ve P

eak

Out

put V

olta

ge −

V

4

5

MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE †

vsOUTPUT CURRENT

|IO| − Output Current − mA

TA = −55°C

TA = 25°C

TA = 125°C

VDD± = ±5 V

VO

M +

Figure 17

0 1 2 3 4 5 6

IO − Output Current − mA

MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE †

vsOUTPUT CURRENT

VDD = ±5 VVIC = 0 V

TA = 125°C

TA = 25°C

TA = −55°C

−3.8

−4

−4.2

−4.4

−4.6

−4.8

−5

− M

axim

um N

egat

ive

Pea

k O

utpu

t Vol

tage

− V

VO

M −

Figure 18

Figure 19

2

1

010 k 100 k 1 M

3

f − Frequency − Hz

4

10 M

6

5

7

8

9

10

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

V(O

PP

) −

Max

imum

Pea

k-to

-Pea

k O

utpu

t Vol

tage

− V

VO

(PP

)

VDD = 5 V

VDD = ±5 V

RL = 10 kΩTA = 25°C

Figure 20

4

0

2 3 4

8

12

16

5 6 7 8

IOS

− S

hort

-Circ

uit O

utpu

t Cur

rent

− m

AO

SI


SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE

VID = 100 mV

VO = 0 VTA = 25°C

−8

VID = −100 mV

−4





−5

SHORT-CIRCUIT OUTPUT CURRENT†


−75 −50 −25 0 25 50 75 100 125

−1

−3

7

11

15

IOS

− S

hort

-Circ

uit O

utpu

t Cur

rent

− m

AO

SI


VID = 100 mV

VID = −100 mV

VO = 0 VVDD = ±5 V

Figure 21

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

3

2

1

0800

4

5

1200

VID − Differential Input Voltage − µV

− O

utpu

t Vol

tage

− V

VO

−800 −400 4000

VDD = 5 VTA = 25°CRL = 10 kΩVIC = 2.5 V

Figure 22

1

−1

−3

−50 250

3

5

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

500 750 1000VID − Differential Input Voltage − µV

− O

utpu

t Vol

tage

− V

VO

−1000 −750 −250−500

Figure 23

VDD = ±5 VTA = 25°CRL = 10 kΩVIC = 0 V

0.1

1

0.1 1 10 100

10

100

1000

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION

vsLOAD RESISTANCE

RL − Load Resistance − k Ω

VO = ±1 VTA = 25°C

VDD = ±5 V

VDD = 5 V

Figure 24

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

AV

D Vol

tage

Am

plifi

catio

n −

dB





0

20

1 k 10 k 100 k 1 M

40

60

80

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN

vsFREQUENCY


10 M

om −

Pha

se M

argi

n φ m

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°C

−20

−40 −90°

−45°

0°

45°

90°

135°

180°A

VD

− L

arge

-Sig

nal D

iffer

entia

l

ÁÁÁÁÁÁ

AV

D Vol

tage

Am

plifi

catio

n −

dB

Figure 25

0

20

1 k 10 k 100 k 1 M

40

60

80

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE MARGIN

vsFREQUENCY


10 M

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°C

om −

Pha

se M

argi

n φ m

−20

−40 −90°

−45°

0°

45°

90°

135°

180°

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁÁÁ

AV

D Vol

tage

Am

plifi

catio

n −

dB

Figure 26




LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION †


−75 −50 −25 0 25 50 75 100 12510

100

1 k


VDD = 5 VVIC = 2.5 VVO = 1 V to 4 V

RL = 1 MΩ

RL = 10 kΩ

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁ

AV

DV

olta

ge A

mpl

ifica

tion

− V

/mV

Figure 27

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION †


−75 −50 −25 0 25 50 75 100 12510

100

1 k


RL = 1 MΩ

RL = 10 kΩ

VDD = ±5 VVIC = 0 VVO = ± 4 V

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

ÁÁÁÁ

AV

DV

olta

ge A

mpl

ifica

tion

− V

/mV

Figure 28

10

1

0.1

1000

100

100 1 k 10 k 100 k 1 M

zo −

Out

put I

mpe

danc

e −

O


Ωz o

OUTPUT IMPEDANCEvs

FREQUENCY

VDD = 5 VTA = 25°C

AV = 100

AV = 10

AV = 1

Figure 29

10

1

0.1

1000

100

100 1 k 10 k 100 k 1 M

zo −

Out

put I

mpe

danc

e −

O


Ωz o

OUTPUT IMPEDANCEvs

FREQUENCY

VDD = ±5 VTA = 25°C

AV = 100

AV = 10

AV = 1

Figure 30





COMMON-MODE REJECTION RATIOvs

FREQUENCY

60

40

20

010 100 1 k 10 k

CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B

80

100

100 k 1 M


VDD = ±5 V

VDD = 5 V

10 M

TA = 25°C

Figure 31


CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B

COMMON-MODE REJECTION RATIOvs

FREE-AIR TEMPERATURE

82

78

74

70

86

90

−75 −50 −25 0 25 50 75 100 125

VDD = ±5 V

VDD = 5 V

VIC = 0 V to 2.7 V

VIC = −5 V to 2.7 V

Figure 32

40

20

0

10 100 1 k

kSV

R −

Sup

ply-

Volta

ge R

ejec

tion

Rat

io −

dB

60

80


100

10 k 100 k 1 M 10 M

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

kS

VR

VDD = 5 VTA = 25°C

kSVR+

kSVR−

−20

Figure 33

40

20

0

10 100 1 k

kSV

R −

Sup

ply-

Volta

ge R

ejec

tion

Rat

io −

dB

60

80


100

10 k 100 k 1 M 10 M

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

kS

VR

VDD = ±5 VTA = 25°C

kSVR+

kSVR−

−20

Figure 34



TYPICAL CHARACTERISTICSkS

VR

− S

uppl

y Vo

ltage

Rej

ectio

n R

atio

− d

B

SUPPLY VOLTAGE REJECTION RATIO †


kS

VR

TA − Free-Air Temperature − °C−75 −50 −25 0 25 50 75 100 125

100

95

90

85

105

110VDD± = ±2.2 V to ±8 VVO = 0 V

Figure 35

0 1 2 3 4 5 6 7 80

0.6

1.2

1.8

2.4

3

IDD

− S

uppl

y C

urre

nt −

mA

DD

I

|VDD± | − Supply Voltage − V

VO = 0 VNo Load

TA = 25°C

TA = −55°C

TA = 125°C

Figure 36

TLC2272SUPPLY CURRENT†

vsSUPPLY VOLTAGE

Figure 37

0 1 2 3 4 5 6 7 80

1.2

2.4

3.6

4.8

6

IDD

− S

uppl

y C

urre

nt −

mA

DD

I

|VDD± | − Supply Voltage − V

VO = 0 VNo Load

TA = 25°C

TA = −55°C

TA = 125°C


vsSUPPLY VOLTAGE

Figure 38

−75 −50 −25 0 25 50 75 100 1250

0.6

1.2

1.8

2.4

3


IDD

− S

uppl

y C

urre

nt −

mA

DD

I

VDD = 5 VVO = 2.5 V

VDD = ±5 VVO = 0 V







Figure 39

−75 −50 −25 0 25 50 75 100 1250

1.2

2.4

3.6

4.8

6


IDD

− S

uppl

y C

urre

nt −

mA

DD

I

VDD = 5 VVO = 2.5 V

VDD = ±5 VVO = 0 V



µs

SR

− S

lew

Rat

e −

V/

0

1

2

3

CL − Load Capacitance − pF

SLEW RATEvs

LOAD CAPACITANCE

10 k1 k10010

SR +

SR −

4

5VDD = 5 VAV = −1TA = 25°C

Figure 40

3

2

1

4

µsS

R −

Sle

w R

ate

− V

/

−75 −50 −25 0 25 50 75 100 125


SLEW RATE†


VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1

SR +

SR −

0

5

Figure 41

INVERTING LARGE-SIGNAL PULSE RESPONSE

2

1

01 2 3 4 5

3

4

5

6 7 8 9

VO

− O

utpu

t Vol

tage

− m

VV

O

t − Time − µs

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

0

Figure 42





0

− 1

− 3

− 4

− 5

4

− 2

1 2 3 4 5

2

1

3

5

6 7 8 9

VO

− O

utpu

t Vol

tage

− V

VO

t − Time − µs

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

INVERTING LARGE-SIGNAL PULSE RESPONSE

0

Figure 43

3

2

1

01 2 3 4 5

4

5

6 7 8 9V

O −

Out

put V

olta

ge −

VV

Ot − Time − µs

VDD = 5 VRL = 10 kΩCL = 100 pFAV = 1TA = 25°C

VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE

0

Figure 44

VOLTAGE-FOLLOWERLARGE-SIGNAL PULSE RESPONSE

0

−1

4

1 2 3 4 5

2

1

3

5

6 7 8 9

VO

− O

utpu

t Vol

tage

− V

VO

t − Time − µs

VDD = ±5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1

0

−2

−3

−5

−4

Figure 45

INVERTING SMALL-SIGNAL PULSE RESPONSE

2.5

2.45

2.40.5 1 1.5 2 2.5

2.55

2.6

2.65

3.5 4.5 5 5.5

VO

− O

utpu

t Vol

tage

− V

VO

t − Time − µs

VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = −1

0 3 4

Figure 46




0

−1000 0.5 1 1.5 2

50

100

2.5 3 3.5 4

VO

− O

utpu

t Vol

tage

− m

VV

O

t − Time − µs

INVERTING SMALL-SIGNAL PULSE RESPONSE


−50

Figure 47

VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE

2.5

2.45

2.4

2.55

2.6

0 0.5 1 1.5

VO

− O

utpu

t Vol

tage

− V

VO

t − Time − µs

2.65VDD = 5 VRL = 10 kΩCL = 100 pFTA = 25°CAV = 1

Figure 48

VOLTAGE-FOLLOWERSMALL-SIGNAL PULSE RESPONSE

0

−50

−100

50

100

0 0.5 1 1.5

VO

− O

utpu

t Vol

tage

− m

VV

O

t − Time − µs


Figure 49

20

10

010 100 1 k

Vn

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

− n

V H

z

30


40

10 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

50

60

Vn

nV/

Hz VDD = 5 V

TA = 25°CRS = 20 Ω

Figure 50




20

10

010 100 1 k

Vn

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

− n

V H

z

30


40

10 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

50

60

Vn

nV/

Hz

VDD = ±5 VTA = 25°CRS = 20 Ω

Figure 51

−750

−10002 4 6

0

250

8 10N

oise

Vol

tage

− n

V

t − Time − s

NOISE VOLTAGEOVER A 10 SECOND PERIOD

0

VDD = 5 Vf = 0.1 Hz to 10 HzTA = 25°C

500

750

1000

−250

−500

Figure 52

Inte

grat

ed N

oise

Vol

tage

− u

VR

MS

1

0.1

100

1 10 100 1 k


INTEGRATED NOISE VOLTAGEvs

FREQUENCY

10 k 100 k

VR

MS

µ

Calculated UsingIdeal Pass-Band FilterLower Frequency = 1 HzTA= 25°C

10

Figure 53

0.0001

0.001

100 1 k 10 k 100 k

TH

D +

N −

Tot

al H

arm

onic

Dis

tort

ion

Plu

s N

oise

− %


TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.01

0.1

1VDD = 5 VTA = 25°CRL = 10 kΩ

AV = 100

AV = 10

AV = 1

Figure 54




Figure 55

Gai

n-B

andw

idth

Pro

duct

− M

Hz

2.1

20 1 2 3 4 5

2.2

2.3

6 7 8|VDD±| − Supply Voltage − V

2.4

2.5

GAIN-BANDWIDTH PRODUCTvs

SUPPLY VOLTAGE

f = 10 kHzRL = 10 kΩCL = 100 pFTA = 25°C

Figure 56

−75 −50 −25 0 25 50 75 100 125TA − Free-Air Temperature − °C

Gai

n-B

andw

idth

Pro

duct

− M

Hz

GAIN-BANDWIDTH PRODUCT †


1.8

1.6

1.4

2

2.4

2.2

2.6

2.8

3VDD = 5 Vf = 10 kHzRL = 10 kΩCL = 100 pF

10

om −

Pha

se M

argi

n

10000CL − Load Capacitance − pF

φm

PHASE MARGINvs

LOAD CAPACITANCE

1000100

VDD = ±5 VTA = 25°C

Rnull = 20 Ω

Rnull = 10 Ω

Rnull = 0

75°

60°

45°

30°

15°

0°

10 kΩ

10 kΩ

VDD −

VDD +Rnull

CLVI

Rnull = 100 Ω

Rnull = 50 Ω

Figure 57 Figure 58

3

010

Gai

n M

argi

n −

dB

6

9

10000CL − Load Capacitance − pF

12

15

GAIN MARGINvs

LOAD CAPACITANCE

1000100

VDD = 5 VAV = 1RL = 10 kΩTA = 25°C




APPLICATION INFORMATION

macromodel information

Macromodel information provided was derived using Microsim Parts , the model generation software usedwith Microsim PSpice. The Boyle macromodel (see Note 6) and subcircuit in Figure 59 were generated usingthe TLC227x typical electrical and operating characteristics at TA = 25°C. Using this information, outputsimulations of the following key parameters can be generated to a tolerance of 20% (in most cases):

Maximum positive output voltage swing Maximum negative output voltage swing Slew rate Quiescent power dissipation Input bias current Open-loop voltage amplification

Unity gain frequency Common-mode rejection ratio Phase margin DC output resistance AC output resistance Short-circuit output current limit

NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journalof Solid-State Circuits, SC-9, 353 (1974).

OUT

+

−

+

−

+

−

+

−

+−

+

−

+

− +

−

+−

.SUBCKT TLC227x 1 2 3 4 5C1 11 1214E−12C2 6 760.00E−12DC 5 53DXDE 54 5DXDLP 90 91DXDLN 92 90DXDP 4 3DXEGND 99 0POLY (2) (3,0) (4,) 0 .5 .5FB 99 0POLY (5) VB VC VE VLP VLN 0+ 984.9E3 −1E6 1E6 1E6 −1E6GA 6 011 12 377.0E−6GCM 0 6 10 99 134E−9ISS 3 10DC 216.OE−6HLIM 90 0VLIM 1KJ1 11 210 JXJ2 12 110 JXR2 6 9100.OE3

RD1 60 112.653E3RD2 60 122.653E3R01 8 550R02 7 9950RP 3 44.310E3RSS 10 99925.9E3VAD 60 4−.5VB 9 0DC 0VC 3 53 DC .78VE 54 4DC .78VLIM 7 8DC 0VLP 91 0DC 1.9VLN 0 92DC 9.4.MODEL DX D (IS=800.0E−18).MODEL JX PJF (IS=1.500E−12BETA=1.316E-3+ VTO=−.270).ENDS

VCC+

RP

IN −2

IN+1

VCC−

VAD

RD1

11

J1 J2

10

RSS ISS

3

12

RD2

60

VE

54DE

DP

VC

DC

4

C1

53

R2

6

9

EGND

VB

FB

C2

GCM GA VLIM

8

5

RO1

RO2

HLIM

90

DIP

91

DIN

92

VINVIP

99

7

Figure 59. Boyle Macromodel and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.

!'# #!$'" !'# ") !'# % &+ "'+ "'+ " *" &+ # $''+ %#", '' ") #%" %", )"#"# ")#!$" %$" " *)) ") !' '"#(

MECHANICAL DATA

MSOI002B – JANUARY 1995 – REVISED SEPTEMBER 2001

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE8 PINS SHOWN

8

0.197(5,00)

A MAX

A MIN(4,80)0.189 0.337

(8,55)

(8,75)0.344

14

0.386(9,80)

(10,00)0.394

16DIM

PINS **

4040047/E 09/01

0.069 (1,75) MAX

Seating Plane

0.004 (0,10)0.010 (0,25)

0.010 (0,25)

0.016 (0,40)0.044 (1,12)

0.244 (6,20)0.228 (5,80)

0.020 (0,51)0.014 (0,35)

1 4

8 5

0.150 (3,81)0.157 (4,00)

0.008 (0,20) NOM

0°– 8°

Gage Plane

A

0.004 (0,10)

0.010 (0,25)0.050 (1,27)

NOTES: A. All linear dimensions are in inches (millimeters).B. This drawing is subject to change without notice.C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).D. Falls within JEDEC MS-012

MECHANICAL DATA

MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE14 PINS SHOWN

0,65 M0,10

0,10

0,25

0,500,75

0,15 NOM

Gage Plane

28

9,80

9,60

24

7,90

7,70

2016

6,60

6,40

4040064/F 01/97

0,30

6,606,20

8

0,19

4,304,50

7

0,15

14

A

1

1,20 MAX

14

5,10

4,90

8

3,10

2,90

A MAX

A MIN

DIMPINS **

0,05

4,90

5,10

Seating Plane

0°–8°

NOTES: A. All linear dimensions are in millimeters.B. This drawing is subject to change without notice.C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.D. Falls within JEDEC MO-153

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.

TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.

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Documents

ˆ ˘ ˇgroups.ist.utl.pt/lee/SUBA/Suba_files/tlc2274-ep.pdf · TS274, TLC272, and TLC274 description The TLC2272A and TLC2274A are dual and quadruple operational amplifiers from