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A STUDY OF VARIABLE I-REGION THICKNESS EFFECTS
ON PIN DIODE SWITCHING SPEED
PROJECT LEADER:
WARSUZARINA BlNTl MAT JUBADI
CO-RESEARCHERS:
MAZITA BlNTl MOHAMAD
ROSNAH BlNTl MOHD ZIN
NABIAH BINTI ZINAL
FUNDAMENTAL RESEARCH GRANT SCHEME (VOT 0559)
UNlVERSlTl TUN HUSSEIN ONN MALAYSIA
ABSTRACT
The PIN diodes are widely used in RF, UHF and microwave circuits as it acts as a current
controlled resistor at these frequencies. PIN diode performance is greatly influenced by the
geometrical size of the device, especially in the intrinsic region. The change in geometry in
the intrinsic will result the differences the most important parameters value of the PIN diode
including the carrier lifetime and transit time kequency. In this research, the switchmg speed
performance of PIN diode with different I-region layer thickness, W, is analyzed to study
their correlation. A PIN diode structure has been designed in the Sentaums Technology
Computer Aided Design (TCAD) tools.The I-layer thickness (or width) is varied from 5pm to
1 0 0 ~ to investigate its effects on the current-voltage (I-V) characteristics and a few other
important parameters have been extracted. These parameters are used to analyze the
switching speed performance of the Silicon (Si) PIN diode. The study is validated by theory
calculation as well as experimental work using practical diode with driver circuit.
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