A Low-Power Phase Locked Loop Using Self Healing ...ity curve boundary is reported for the first time. It is generally desired to design low Phase noise, wide tuning, low power consumption,

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Fig 9: shows the training state analysis of the simula-tion result.

The above figure’s shows the training state plot and performance curve produced while training, testing and validation of the network. We get the Best Valida-tion Performance 12.515 at 4 epochs, in this point our proposed work gives hundred percent result accuracy. The above analysis shows the experimental analysis of our proposed work.

5.CONCLUSION:

The classification of brain tumor is successfully execut-ed by using the neural network toolbox, GUI (graphical user interface) and DIP (digital image processing) tool box. This work used dataset contains all modalities T1, T2 of MR Images, which is giving it high potential, ac-curacy and yield in detecting any kind or definite type of abnormalities.

In my proposed work 40% of the data has been used for training and left over 60% was used for validation and testing.

The neural network training tool is used to check the performance of the proposed method so that it is help-ful to increase the classification accuracies. For future work, I plan to design an efficient magnetic resonance imaging hardware model. This hardware model would detect and classify the brain tumor hundred percent successfully without any limitations.

REFERENCES:

[1] Adekunle M. Adesina, (2010), Introduction and over-view of brain tumors, [online], Available: http://link.springer.com/chapter/10.1007%2F978-1-4419-1062-2_0.

[2] Eltaher Mohamed Hussein, Dalia MahmoudAdam Mahmoud, Brain Tumor Detection Using Artificial Neu-ral Networks, Journal of Science and Technology Vol. 13, No. 2 ISSN 1605 – 427XEngineering and Computer Sciences (ECS), December 2012.

[3] T. Purusothaman, Performance Analysis of Clus-tering Algorithms in Brain Tumor Detection of MR Images, European Journal of Scientific Research ISSN 1450-216X Vol.62 No.3 (2011), pp. 321-330.

[4] Dina Aboul Dahab, Samy S. A. Gummy, Gamal M. Se-lim, Automated Brain Tumor Detection and Identifica-tion Using Image Processing and Probabilistic Neural Network Techniques, International Journal of Image Processing and Visual Communication ISSN 2319-1724: Volume (Online) 1, Issue 2, October 2012.

[5] Carlos Arizmendi, Juan Hernandez, Enrique Rome-ro, Alfredo Vellido, Francisco delPozo. Diagnosis of Brain Tumors from magnetic resonance spectroscopy using wavelets and neural networks. 32nd Annual In-ternational conference of the IEEE EMBS Buenos Aires, Argentina, 2010 (August 31- September 4).

[6] H. Demuth and M. Beale. Neural Network Toolbox for Use with Mat lab®, 1998.

[7] N.Sivanandam, S.Sumathi, S.N. Deepa. Introduction to Neural Networks Using MATLAB 6.0, McGraw-Hill, 2006.




ABSTRACT:

This paper deals with different approaches to design low power Phase Locked Loop (PLL) using self heal-ing Pre-scaler/VCO. The performance of PLL frequency synthesizer is improved by using different Voltage con-trolled Oscillator (VCO) and their varactor or magnetic tuning scheme. The self healing VCO is implemented in this paper. A 5-stage pre-scaler operating up to 84GHz is presented.

The pre-scaler requirements, design considerations, simulations, and performance measurements are pre-sented. The first divide-by-2 stage consumes 17.7mW at 1.8V, or 26.4fJ power-delay product per gate. The pre-scaler’s phase noise gain degeneration at the sensitiv-ity curve boundary is reported for the first time.

It is generally desired to design low Phase noise, wide tuning, low power consumption, high quality factor and independent to Process, Voltage, and Temperature (PVT) variation. However, here various improvements in technology from μm to nm, supply voltage from 0.7 to 1.8V, frequency generated from 2 to 78 GHz and tun-ing range from 10 to 23% are discussed.

I.INTRODUCTION:

The CMOS –technology approaches to a nanometer scale, the non-idealities such as variability and leakage current may significantly affect the circuit performance. The process variability leads to the large variations to degrade the device matching and performances. It may result in only a few design a wafer to meet the target performance specifications.

Sudhakar Reddy ChevuriM.Tech Student in VLSI Design,

Department ECE,Universal College of Engineering & Technology,

Pericherla, Guntur.

B. PoornaiahAssociate Professor & HOD

Department ECE,Universal College of Engineering & Technology,

Pericherla, Guntur.

The undesired leakage currents also degrade the ac-curacy and resolution of analog circuits and make digi-tal dynamic circuits not to work properly. For a PMOS transistor with W/L=8Um in 65-nm process, its source and gate are connected to the supply voltage of12v. The drain current leakage current is 68.7na, 0.12ua and 21ua for the typical slow-slow and fast corners respec-tively and 40c.The leakage current is highly dependent upon the process variation. The current under different corners and temperatures’ with a constant VSD=1.22v the leakage current grows very fast in a high tempera-ture environment.

A phase locked loop (PLL) is widely employed in wire -line and wire-less communication systems .The poor device matching and leakage current vary the common mode voltage of a ring-based voltage-controlled oscil-lator. It may limit the oscillation frequency range of a VCO and causes a VCO not to oscillator in a worst case. the leakage current and leakage mismatch charge will be degrade the reference spur and jitter significantly. To mitigate the above problems a self healing divided by pre-scalar and a self healing VCO are presented.

II.CIRCUIT DESCRIPTION:

Fig1 PLL Architecture

A Low-Power Phase Locked Loop Using Self Healing Pre-Scaler/VCO




The PLL circuit consists of a differential VCO, a divider chain with total modulus of 64, a phase and frequency detector, and a third-order loop filter.

The phase locking and frequency acquisition loops are decomposed to achieve low jitter and wide operation range simultaneously. The phase and frequency detec-tor is implemented with SSB mixers and low-pass fil-ters to suppress the reference feed through.

An extra divider-by-2 circuit is incorporated to provide quadrature reference inputs. Similar to that in [3], the frequency detector along with its V/I converter are au-tomatically turned off upon lock to minimize the distur-bance to the VCO.

The loop filter is realized on chip to minimize the noise coupling through bonding wires. The 9-layer intercon-nect metals in 90-nm process provide high density fringe capacitor2 [4], making the loop filter occupy only m .

To accommodate the severe tradeoffs between the in-put frequency and operation range, different types of dividers need To be employed here. Generally speak-ing, the injection-locked dividers [5] achieve the high-est operation frequency due to the narrowest locking the simplest structure, but usually with Divider ar-rangement.

Fig2. (a) Locking range normalization with presumed 2 scale-up requirement. (b) Simulated locking ranges

for each divider.

III.PROPOSED ARCHITECTURE:

IN THAT MOSTLY composed of a 5-bit counter, a 3-bit swallow counter, a modulus control, and a self-healing divide-by-4/5 prescaler. The division Ratio is from 4 to 131. The parameters of this PLL are listed in

Fig3. Proposed PLL architecture.

Since the phase error of a PLL is highly dependent upon the current mismatch of a CP. The static phase error of a PFD is given asΔ=Δicp.ton/icp

Where is ICP the current IUP &IDN, TON difference between the pull-up and Pull-down currents, and, is the turn-on time of a PFD, ICP is the averaging current of the pull-up and pull-down currents. When this PLL locks, the LD is enabled to turn on the TDC and an en-coder.

a. 4-Bit Controller in PLL:

Fig: 4-Bit Controller in PLL




A 4-bit TDC digitizes this static phase Error to reflect the amount of the current mismatching. Then, the digital code of this TDC is used to calibrate the charge pump. The simulated power of this TDC is 0.24 mW. Its timing resolution is 0.3 ns and the dynamic range is 4.8 ns. A 4-bit digitally-controlled CP is shown in fig4. The up current has a nominal value of 200A and the down current digitally controlled within 180 and 210 A.

The minimum current step is chosen as 2 A to relieve the worst-case current mismatch to 1% in this digitally-controlled CP. The traditional replica-biased CP needs an operational amplifier which needs a High gain and its stability must be concerned. In addition, this opera-tional amplifier may consume a static power. The CP calibration can be finished quickly due to this digital calibration. Once the calibration is completed, the digi-tal code is fixed and the TDC is power-downed to save a power.

b.Self-healing system:

Fig5 self -Healing System.

Healing goes beyond simple BIST by adding a layer of hardware and software intelligence to the system that enables autonomous calibration. The present work seeks to show case two wideband test signal source for on-die self healing of an 8-18 GHz (X to Ku band) receiver chain intended for use in radar applications.

In order to exhibit healing, the second test signal source is integrated on die with a 6-20 GHz image-reject mixer. Automated IRR healing is performed on die as a demonstration of local block-level self-healing. VCO of whether the oscillating “tube” is indeed a transmis-sion line.4 Fig. 4(a) introduces a typical high-speed VCO design with a simple buffer, an injection locked divider and a MOS varactor.

The circuit oscillates at a frequency such that the corre-sponding wavelength is 4 times as large as the equiva-lent length, leaving the ends (node and) as maximum swings.

However, as the resonance Frequency increases, the loading of the varactors, the buffers, and the divid-ers becomes significant as compared with that of the cross-coupled pair itself. These indispensable capaci-tances burden the VCO substantially.

Note that none of these devices can be made arbitrarily small: pair must provide sufficient negative resistance; transistor needs to inject large signal current, and has to provide enough frequency tuning. With the device dimension listed in Fig. 4(a), the circuit oscillates at only 46 GHz. Note that the device sizes have approached the required minimum and further shrinking may cause significant swing degradation.

c.Vector First Stage:

The first two stages the frequency is brought down to below 20GHZ, allowing static implementation on the sub sequent dividers, to extend the band width with-out using inductors we realize the 3-dividers stage as class-AB structure.




The large in stantaneous currents crease high gain in the signal path and therefore high speed. Beyond this point the divider design becomes much more relaxed. The succeeding stages are implemented as stand static dividers with the power and bandwidth optimized.

Fig (a) Second Stage (b) Third Divider Stage

Δ win represents the frequency difference between ck ref and ck div. obviously wither V1 is leading in log in v2 depends on the sign of win, and it can be easily ob-tained by using a flip-flop output.

the VI converter designed to the frequency detection loop. Injects positive or negative current to the loop fil-ter. This current is 3-times larger than the peak current of (V/I) PD to ensure a smooth frequency acquisition.

IV.SIMMULATION AND SYNTHESIS:




The Figures are measured through the jitter at 855mhz (A) without and (B) with the self healing rescaler/vco and tdc/encoder to avoid the mal functionδv1 leakage show be lower the vthrosld voltage vthrosld or the sub-sequent stage as Δvleakage<threshold. The lowest clock frequency of this “TSPCDEF” is Fclock, low≥Ileakage/2.ctot.vthreshol. For example Ileakage~400na at25c ctotal~15fF, and v threshold=0.6v the calculated low-est frequency is 2202MHz that the leakage current is proportional to the temperature. When the tempera-ture increases the lowest frequency is also increases.

The highest frequency of the Tspc is more than 10GHZ. Measured spectrum and jitter (a) 120HZ and 100c and (b) then measured spectrum and jitter. Where Γ2=RMBZ.CH, RMBZ is the equivalent resistance of the transistor Mb2, and v2 is the initial voltage during the discharging interval the voltages vbl changes from the voltage V0~0v to the reference voltages Vsw assume Γ2<<Γ1, the required time track is approximated as Track-~T1Ln (VDD/VDD-vsw) Then required capacitor CH~TRACK/ln (VDD/VDD-VSW).RMB1 In this work the minimum frequency step Δfmin of this PLL is equal to the reference frequency frefΔ vctrl=Δfmin/kvco=fref/kvcoRequired time for this PLL to reachΔT = (c1+c2)/IP .ΔvctrlThe output is obtained by a self biased buffer. A com-mon-mode detector can be used to detect the com-mon-mode voltage.

V.CONCLUSION:

A wide-range PLL is fabricated in a 65-nm CMOS pro-cess. To deal with the process variability and leakage current in nano-scale CMOS process.

A self-healing pre-scaler a self-healing, VCO, and a cali-brated CP are presented experimental results are given to demonstrate the feasibility.

REFERENCES:

1.L.L.L EWYN,T>Ytterdal c.Welff and k.martin analog circuit design in nanoscale CMOS technologies. Prociee vol 18, no, 11, pp.1687-1714, oct.2009.

2.J.M wang x, cao m.chenj.sun and amitev capturing device mismatch in analog and mixed single design “IEEE circuits syst.mag 8no.4pp.137-144:dec2008.

3.k>AGAWO H.HARA T.TAKAYANAGI and t.kurada A bit line leakage compensation schemes for low voltages.

Author Details:

Sudhakar reddy Chevuri was born in Guntur, Andhra Pradesh (A.P), in 1991. He received the B.Tech Degree in electronics and communication engineering (ECE) from Jawaharlal Nehru technological University (JNTU), Kakinada, Andhra Pradesh (A.P), in 2012. He is currently pursuing the M.Tech degree in electronics communication engineering (VLSID), Jawaharlal Nehru technological University (JNTU), and Kakinada, in Uni-versal college of Engineering and Technology, Dokip-arru, Guntur, A.P.

Poornaiah Billa is a Associate professor and Head of the Department of Electronics and communication Engineering. Part time Research Scholar in Instrument Technology Department, Andhra University College of Engineering, Visakhapatnam, India. He received his M.Tech. in Electronics and Communication Engineering from Andhra University, Visakhapatnam in 2002 and B.Tech in Electronics and Instrumentation Engineering from Nagarjuna University ,Guntur in 1998. At present, he is working as Professor and Head in the Electronics and communication Engineering in Universal college of Engineering and Technology, Dokiparru, Guntur, A.P. He has 14 Years of teaching experience in various in-stitutes.




The large in stantaneous currents crease high gain in the signal path and therefore high speed. Beyond this point the divider design becomes much more relaxed. The succeeding stages are implemented as stand static dividers with the power and bandwidth optimized.

Fig (a) Second Stage (b) Third Divider Stage

Δ win represents the frequency difference between ck ref and ck div. obviously wither V1 is leading in log in v2 depends on the sign of win, and it can be easily ob-tained by using a flip-flop output.

the VI converter designed to the frequency detection loop. Injects positive or negative current to the loop fil-ter. This current is 3-times larger than the peak current of (V/I) PD to ensure a smooth frequency acquisition.

IV.SIMMULATION AND SYNTHESIS:




The Figures are measured through the jitter at 855mhz (A) without and (B) with the self healing rescaler/vco and tdc/encoder to avoid the mal functionδv1 leakage show be lower the vthrosld voltage vthrosld or the sub-sequent stage as Δvleakage<threshold. The lowest clock frequency of this “TSPCDEF” is Fclock, low≥Ileakage/2.ctot.vthreshol. For example Ileakage~400na at25c ctotal~15fF, and v threshold=0.6v the calculated low-est frequency is 2202MHz that the leakage current is proportional to the temperature. When the tempera-ture increases the lowest frequency is also increases.

The highest frequency of the Tspc is more than 10GHZ. Measured spectrum and jitter (a) 120HZ and 100c and (b) then measured spectrum and jitter. Where Γ2=RMBZ.CH, RMBZ is the equivalent resistance of the transistor Mb2, and v2 is the initial voltage during the discharging interval the voltages vbl changes from the voltage V0~0v to the reference voltages Vsw assume Γ2<<Γ1, the required time track is approximated as Track-~T1Ln (VDD/VDD-vsw) Then required capacitor CH~TRACK/ln (VDD/VDD-VSW).RMB1 In this work the minimum frequency step Δfmin of this PLL is equal to the reference frequency frefΔ vctrl=Δfmin/kvco=fref/kvcoRequired time for this PLL to reachΔT = (c1+c2)/IP .ΔvctrlThe output is obtained by a self biased buffer. A com-mon-mode detector can be used to detect the com-mon-mode voltage.

V.CONCLUSION:

A wide-range PLL is fabricated in a 65-nm CMOS pro-cess. To deal with the process variability and leakage current in nano-scale CMOS process.

A self-healing pre-scaler a self-healing, VCO, and a cali-brated CP are presented experimental results are given to demonstrate the feasibility.

REFERENCES:

1.L.L.L EWYN,T>Ytterdal c.Welff and k.martin analog circuit design in nanoscale CMOS technologies. Prociee vol 18, no, 11, pp.1687-1714, oct.2009.

2.J.M wang x, cao m.chenj.sun and amitev capturing device mismatch in analog and mixed single design “IEEE circuits syst.mag 8no.4pp.137-144:dec2008.

3.k>AGAWO H.HARA T.TAKAYANAGI and t.kurada A bit line leakage compensation schemes for low voltages.

Author Details:

Sudhakar reddy Chevuri was born in Guntur, Andhra Pradesh (A.P), in 1991. He received the B.Tech Degree in electronics and communication engineering (ECE) from Jawaharlal Nehru technological University (JNTU), Kakinada, Andhra Pradesh (A.P), in 2012. He is currently pursuing the M.Tech degree in electronics communication engineering (VLSID), Jawaharlal Nehru technological University (JNTU), and Kakinada, in Uni-versal college of Engineering and Technology, Dokip-arru, Guntur, A.P.

Poornaiah Billa is a Associate professor and Head of the Department of Electronics and communication Engineering. Part time Research Scholar in Instrument Technology Department, Andhra University College of Engineering, Visakhapatnam, India. He received his M.Tech. in Electronics and Communication Engineering from Andhra University, Visakhapatnam in 2002 and B.Tech in Electronics and Instrumentation Engineering from Nagarjuna University ,Guntur in 1998. At present, he is working as Professor and Head in the Electronics and communication Engineering in Universal college of Engineering and Technology, Dokiparru, Guntur, A.P. He has 14 Years of teaching experience in various in-stitutes.

Documents

A Low-Power Phase Locked Loop Using Self Healing ...ity curve boundary is reported for the first time. It is generally desired to design low Phase noise, wide tuning, low power consumption,