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A Bolometer Array Instrument for Millimeter Wavelength
Philippe Camus, CNRS-CRTBT (Grenoble)
Milano, July 6th, 2001
Bolometric Millimeter Camera
• Sunyaev-Zel’dovich effect• High-Z objects and star formation regions imaging at 1mm=> wavelength 1.2mm /2.1mm
Which detector at 2.1mm?
IRAM 30m
• Field 5X5 arcmin• 256 [email protected]• 1024 [email protected]
Today and future Instruments
MAMBO (IRAM 30m)37 bolometer array on
Si3N4 membrane(MPfir)
NAME Size(#Pixel)
Wavelength T Detectors
Suzie I(CSO 10.4m)
6 1.1-1.4-2.1mm
300mK NTD+diamant
+nylonSuzie I.5
(CSO 10.4m)12 300mK Spider Web
SHARC(CSO 10.4m)
24 350-450-850
300mK Si impl.Bo+Si
SCUBA(JCMT 15m)
9137
350/450850
100mK
MAMBO(IRAM 30m)
37 1.2mm 300mK NTD-Ge+Si3N4
BOLOCAM(CSO 0.4m/LMT 50m)
151 2.1 - 1.4-1mm
300mK Spider Web
SCUBA2(JCMT 15m)
2000010000
450850
250mK TES+SquidMux
Optical Layout
Cryostat
• Dilution 100-300mK• Adaptation to ‘any’ detector Arrays
20x10-3
15
10
5
0
V
20x10-9
151050
A
Bolo @296mK Bolo @300-310mK Bolo @350mK Membrane @293mK Membrane @342mK
NbSi Bolometer (CSNSM/Service d’Aéronomie)
Bolometer on thin Si3N4 Memebrane 5X5mm e=100nm
Thin film geometry optimisation(typ. 100X400 e=100nm) NEP = 5.10-16 W/Hz 1/2 @300mK
or 5.10-17 W/Hz 1/2 @100mK
Small Array Development(6X6 detectors)
NbSi layer co-evaporation& Lithography
Objective 8X8 bolometers
R(T) de neuf echantillons NbSi
0
1
2
3
4
5
6
390 720 725 800
T(mK)
V(Volt)
Chaque couleur correspond à un des neufs échantillons mesurés(Grenoble 28/04/01)
Electronic Read-Out
• Multiplexing is required to reduce the number of output amplifiers (JFET)
• Low dissipation/low temperature operation (HEMTor MOSFET?)
• Objective of 8 detector/amplifier