A 64-QAM 60GHz CMOS Transceiver with 4-Channel · PDF file20.3: A 64-QAM 60GHz CMOS Transceiver with 4-Channel Bonding © 2014 IEEE ... 20.3: A 64-QAM 60GHz CMOS Transceiver with 4-Channel

20.3: A 64-QAM 60GHz CMOS Transceiver with 4-Channel Bonding

© 2014 IEEE International Solid-State Circuits Conference 0 of 28

Kenichi Okada, Ryo Minami, Yuuki Tsukui,

Seitaro Kawai, Yuuki Seo, Shinji Sato,

Satoshi Kondo, Tomohiro Ueno, Yasuaki Takeuchi,

Tatsuya Yamaguchi, Ahmed Musa, Rui Wu,

Masaya Miyahara, and Akira Matsuzawa

Tokyo Institute of Technology, Japan

A 64-QAM 60GHz CMOS Transceiver

with 4-Channel Bonding



Outline

• Motivation

• Transmitter

• Mixer-first transmitter

• Receiver

• Open-loop FVF-based amp.

• Measurement and Comparison

• Conclusion



60GHz-Band Capability

QPSK 3.52Gbps/ch

16QAM 7.04Gbps/ch

64QAM 10.56Gbps/ch (not reported yet)

16QAM

2-ch bonding 14.08Gbps

3-ch bonding 21.12Gbps (not reported yet)

4-ch bonding 28.16Gbps (not reported yet)

57 58 59 60 61 62 63 64 65 66

Channel

Number

Low Freq.

(GHz)

Center Freq.

(GHz)

High Freq.

(GHz)

Nyquist BW

(GHz)

Roll-Off

Factor

A1 57.24 58.32 59.40 1.76 0.25

A2 59.40 60.48 61.56 1.76 0.25

A3 61.56 62.64 63.72 1.76 0.25

A4 63.72 64.80 65.88 1.76 0.25

Channel

Number

Low Freq.

(GHz)

Center Freq.

(GHz)

High Freq.

(GHz)

Nyquist BW

(GHz)

Roll-Off

Factor

A1 57.24 58.32 59.40 1.76 0.25

A2 59.40 60.48 61.56 1.76 0.25

A3 61.56 62.64 63.72 1.76 0.25

A4 63.72 64.80 65.88 1.76 0.25

1 2 4

240

MHz

120

MHz

1.76 GHz2.16 GHz

3

fGHz

from IEEE802.11ad/WiGig



Design Considerations

• Wideband gain characteristics

• RF: 57-66GHz

• BB: 1.2GHz(1ch), 5GHz(4-ch bonding)

• Wide dynamic range

• Linearity & Sensitivity

• RX SNDR >40dB

• Low phase noise (performance limiter)*

• -96dBc/Hz@1MHz (64QAM)

• I/Q mismatch & LO leakage**

• Image rejection ratio <-40dBc

*K. Okada, et al., JSSC 2013

**S. Kawai, et al., RFIC 2013



Block Diagram

• Direct-conversion

• TX

• Mixer-first topology

• RX

• FVF BB amp.

• Current-bleeding

mixer

• LO

• Injection-lock

• 60GHz QILO*

+20GHz PLL*K. Okada, et al., ISSCC 2011

TX60GHz

20GHz PLL

RX60GHz

BB

BB

Control

Logic

60GHz QILO*



TX Design Considerations

-29mW

-29mW+15dB

+13mW

OIP3 -15dB<3GHz

<3GHz

This workPrevious work*

*K. Okada, et al., ISSCC 2012

50W input

4x 6x



Mixer-First Transmitter

*M. Soer, et al., ISSCC 2009 **C. Andrews, et al., ISSCC 2010

RFout BBin

LO

PA

Mixer-first transmitterMixer-first receiver*, **

BBout RFin

LO

This work

10MHz 2GHz

(20MHz-BW)

4.5GHz57-66GHz

(9GHz-BW)up-converted**down-converted

even for Zin

0 0



Input Impedance and Leakage Cancel

*C. Andrews, et al., ISSCC 2010

Wideband ZRF is realized by Rf-feedback.

𝒁𝐢𝐧 𝝎𝐁𝐁 = 𝟐𝟎𝟎𝛀// 𝑹𝐬𝐰 +𝟒

𝝅𝟐𝒁𝐑𝐅 𝝎𝐁𝐁 +𝝎𝐋𝐎 + 𝒁𝐑𝐅 𝝎𝐁𝐁 −𝝎𝐋𝐎

LO+

LO+

LO-

50W

To PA BB

input

200W

200W

Matc

hin

g

netw

ork

Rf

Rf

ZRF

ZRF

RSW

RSW

RSW

RSW

Zin

Zin



0

5

10

15

20

25

30

0.00 1.08 2.16 3.24 4.32

TX Measurement ResultG

ain

[d

B]

Frequency [GHz]

Lower-side-band gain including RF path

LO=61.56GHz



Image Rejection & LO Leakage

*S. Kawai, et al., RFIC 2013

-50

-40

-30

-20

-10

0

57.62 57.97 58.32 58.67 59.02

Frequency [GHz]

No

rma

lized

Po

wer

[dB

c]

<-47dBc-41dBc

I/Q mismatch calibration* is applied.

RF VGA & QILO phase adjustment



-30

-25

-20

-15

-10

0 1 2 3 4 5 6 7 8 9 10

EV

M [

dB

]

Average output power [dBm]

TX EVM Measurement

16QAMch.3 with 7.04Gb/s



RX Mixer

• Current-bleeding to

reduce LO power

• CCC at RF input

• Pdc: 11mW

• CG: -7dB

• flow: 0.27MHz

• fhigh: >4GHz

BBout+ BBout-

RF+ RF-

Ibleed

Iswitch

Itail

M4 M5

LO-LO+ LO+



RX Baseband Amplifier

*R. Carvajal, et al., TCAS-I 2005

𝑨𝐕 ≅ −𝒈𝐝𝐬𝟑𝒈𝐦𝟑

• Wide bandwidth (>5GHz)

• High gain and high linearity

• Low power consumption

Flipped Voltage Follower* (FVF)

Open-loop FVF-based amplifier

vin

M3

M1

vout



RX Baseband Amplifier (Cont.)

−𝟏

𝒈𝐦𝟑𝑹𝐒//(1/j𝛚𝑪𝐒)−𝒈𝐦𝟕𝑹𝐋

𝑨𝐕 ≅𝒈𝐦𝟕𝒈𝐦𝟑

𝑹𝐋𝑹𝐒

𝑨𝐕 ≅ −𝟏

𝒈𝐦𝟑𝑹𝐒

modified FVF

OUT-

IN+ IN-

+ -

OUT+

M3Cs M4

Cs

M1 M2Rs Rs

M5 M6

RL RL

M9 M10

M7 M8

Vref

SleepVload

vin

M3

M1

vout Rs

by 6mW



Ga

in [

dB

]

RX Measurement Result

Frequency [GHz]

0

5

10

15

20

25

30

35

40

0.00 1.08 2.16 3.24 4.32

Lower-side-band gain including RF path

LO=61.56GHz



60GHz LO Considerations

2ch-bond

4ch-bond

f [GHz]58.32 60.48 62.64 64.8059.40 63.7261.56

Ch.1 Ch.2 Ch.3 Ch.4

*K. Okada, et al., JSSC 2013

• -96dBc/Hz@1MHz for 64QAM

60GHz Quadrature Injection Locked Oscillator*

• Channel bonding

7 carrier frequencies



60GHz Quadrature LO Design

36/40MHz ref.

PFD CP LPF

20GHz PLL

4 (54,55,56,57

58,59,60)

2

5

4.5

60GHz QILO*

58.32GHz

59.40GHz

60.48GHz

61.56GHz

62.64GHz

63.72GHz

64.80GHz

*K. Okada, et al., ISSCC 2011

• 20GHz PLL: 64mW

• 60GHz QILO: 18mW(TX)&15mW(RX)

• QILO frequency range: 58-66GHz

• Phase noise improvement by injection locking*

• -96.5dBc/Hz @ 1MHz at 61.56GHz



PA

60GHz

QILO

LNA

I Mixer

Q Mixer

LO buf.

RF amp.

I Mixer

Q Mixer

LO buf.60GHz

QILO

20GHz

PLL

TX Output

Control

Logic

I Q

I Q

Detailed Block Diagram

BB amp.

(FVF-FVF-SF)

RX Input

RF amp.Psat=10.3dBm

NF=4.2dB



Die Photo

PA

Q MIXER

I MIXER

LO BUF.

LO BUF.

Q.OSC.

Logic

PLL

LNA

I MIXER& RF amp

LO BUF.

LO BUF.

Q.OSC.

RX

BB

ou

t

TX

ou

tR

Xin

TX BB in4.2mm

Area

TX 1.03mm2

RX 1.25mm2

PLL 0.90mm2

Logic 0.67mm2

CMOS 65nm, 1Al+11Cu

TX: 186mW

RX: 155mW

PLL: 64mW

Q MIXER& RF amp

65nm CMOS

TX: 186mW

RX: 155mW

PLL: 64mW



Measurement Setup

RF board(TX mode) RF board

(RX mode)

Arbitrary

Waveform

Generator

Power supply

Oscilloscope

Power supply

• 25-GS/s AWG

• 100-GS/s oscilloscope (33GHz BW)

• 14-dBi horn antennas



Setup for TX-to-RX Measurement

• Symbol rate: 1.76GS/s (1ch), 7.04GS/s (4ch bonding)

• Roll-off factor: 25% for WiGig spectrum mask

• A maximum distance is defined within a SNR of

9.8dB(QPSK), 16.5dB(16QAM), and 22.5dB(64QAM)

for a theoretical BER of 10-3.

RF board

(TX mode)

Oscilloscope

Tektronix DSA73304D

(33-GHz BW, 100GS/s)

RF board

(RX mode)

Powersupply

14 dBi

Power supply

Arbitrary Waveform Generator

Tektronix AWG70002A

(25GS/s)

Controlsignals

36MHz ref.Controlsignals

36MHz ref.



10.56Gb/s 64QAM

Channel/ Carrier freq.

ch.1 58.32GHz

ch.2 60.48GHz

ch.3 62.64GHz

ch.4 64.80GHz

Modulation 64QAM

Data rate 10.56Gb/s 10.56Gb/s 10.56Gb/s 10.56Gb/s

Constellation

Spectrum

TX EVM -27.1dB -27.5dB -28.0dB -28.8dB

TX-to-RX EVM

-24.6dB -23.9dB -24.4dB -26.3dB

Distance 0.08m 0.08m 0.13m 0.06m

-50

-40

-30

-20

-10

0

55.82 58.32 60.82

-50

-40

-30

-20

-10

0

57.98 60.48 62.98

-50

-40

-30

-20

-10

0

60.14 62.64 65.14

-50

-40

-30

-20

-10

0

62.30 64.80 67.30

64QAM with 10.56Gb/s is achieved for the full 4 channels.



7.04Gb/s 16QAM (max 28.16Gb/s)

28.16Gb/s is achieved by using 4-bonded channel.


ch.1 58.32GHz

ch.2 60.48GHz

ch.3 62.64GHz

ch.4 64.80GHz

ch.1-ch.4 Channel

bond

Modulation 16QAM

Data rate 7.04Gb/s 7.04Gb/s 7.04Gb/s 7.04Gb/s 28.16Gb/s

Constellation

Spectrum

TX EVM -27.8dB -27.6dB -28.4dB -28.8dB -20.0dB

TX-to-RX EVM

-24.6dB -24.1dB -24.6dB -27.0dB -17.2dB

Distance 0.7m 0.6m 0.8m 0.4m 0.07m

-50

-40

-30

-20

-10

0

55.82 58.32 60.82

-50

-40

-30

-20

-10

0

57.98 60.48 62.98

-50

-40

-30

-20

-10

0

60.14 62.64 65.14

-50

-40

-30

-20

-10

0

62.30 64.80 67.30-50

-40

-30

-20

-10

0

55.56 58.56 61.56 64.56 67.56




ch.1 58.32GHz

ch.2 60.48GHz

ch.3 62.64GHz

ch.4 64.80GHz

ch.1-ch.4 Channel

bond

Modulation QPSK

Data rate 3.52Gb/s 3.52Gb/s 3.52Gb/s 3.52Gb/s 14.08Gb/s

Constellation

Spectrum

TX EVM -28.1dB -27.7dB -29.0dB -29.7dB -20.1dB

TX-to-RX EVM

-25.3dB -24.5 dB -24.5dB -26.6dB -17.9dB

Distance 2.4m 2.0m 2.6m 0.9m 0.3m

-50

-40

-30

-20

-10

0

55.82 58.32 60.82

-50

-40

-30

-20

-10

0

57.98 60.48 62.98

-50

-40

-30

-20

-10

0

60.14 62.64 65.14

-50

-40

-30

-20

-10

0

62.30 64.80 67.30-50

-40

-30

-20

-10

0

55.56 58.56 61.56 64.56 67.56

3.52Gb/s QPSK (max 14.08Gb/s)

14.08Gb/s is achieved by using 4-bonded channel.



Performance Comparison of 60GHz TRX

Data rate / ModulationTX-to-

RX EVM

Power

consumption

SiBeam [3] 7.14Gb/s(16QAM) -19dBTX: 1,820mW

RX: 1,250mW

Tokyo

Tech [4, 5]

16Gb/s(16QAM)

20Gb/s(16QAM)[5] -21dB

TX: 319mW

RX: 223mW

IMEC [6] 7Gb/s(16QAM) -18dBTX: 167mW

RX: 112mW

Panasonic

[9]2.5Gb/s(QPSK) -22dB

TX: 347mW

RX: 274mW

This work10.56Gb/s(64QAM)

28.16Gb/s(16QAM)-26dB

TX: 251mW

RX: 220mW



Measurement for IEEE802.11ad/WiGig

MCS ModulationData rate

[Mb/s]

TX EVM [dB]

Spec. Meas.

9 QPSK SC 2502.5 -15 -27.1

12 16QAM SC 4620 -21 -27.0

24 64QAM OFDM 6756.75 -26 -26.5

MCS9 MCS12 MCS24

Measured by

Agilent AWG

+ Osc. + VSA

+ 81199A

in ch.3



60GHz CMOS Transceiver

0

5

10

15

20

25

30

2007 2008 2009 2010 2011 2012 2013 2014

Data

ra

te [

Gb

/s]

Year

UCB

NEC

Univ. of Toronto

SiBeam, CEA-LETI

Toshiba

IMEC

Panasonic

UCB

Broadcom

First 64QAM

16QAM(4ch bonding)

Tokyo Tech



Conclusion

• A 60GHz direct-conversion transceiver in

65nm CMOS

• The first 64QAM transceiver (10.56Gbps/ch)

– IEEE802.11ad/WiGig conformance: MCS1-

MCS24(64QAM/OFDM)

• The first transceiver capable of 4-channel

bonding (28.16Gbps by 16QAM)

realized by

–Mixer-first transmitter

–Open-loop FVF-based baseband amplifier

–Quadrature injection-locked oscillator



Acknowledgement

This work was partially supported by MIC,

SCOPE, MEXT, STARC, Canon Foundation,

and VDEC in collaboration with Cadence

Design Systems, Inc., and Agilent

Technologies Japan, Ltd. The authors thank

Dr. Hirose, Dr. Suzuki, Dr. Sato, and Dr.

Kawano of Fujitsu Laboratories, Ltd., and

Prof. Ando of Tokyo Institute of Technology

for their valuable discussions and technical

supports.



References[1] K. Okada, et al., “A 60GHz 16QAM/8PSK/QPSK/BPSK Direct-Conversion Transceiver

for IEEE 802.15.3c,” IEEE ISSCC, pp. 160-161, Feb. 2011.

[2] A. Siligaris, et al., “A 65nm CMOS Fully Integrated Transceiver Module for 60GHz

Wireless HD Applications,” IEEE ISSCC, pp.162-163, Feb. 2011.

[3] S. Emami, et al., “A 60GHz CMOS Phased-Array Transceiver Pair for Multi-Gb/s

Wireless Communications,” IEEE ISSCC, pp.164-165, Feb. 2011.

[4] K. Okada, et al., “A Full 4-Channel 6.3Gb/s 60GHz Direct-Conversion Transceiver with

Low-Power Analog and Digital Baseband Circuitry,” IEEE ISSCC, pp. 218-219, Feb.

2012.

[5] S. Kawai, et al., “A Digitally-Calibrated 20Gb/s 60GHz Direct-Conversion Transceiver in

65-nm CMOS,” IEEE RFIC Symp., pp.137-140, June 2013.

[6] V. Vidojkovic, et al., “A Low-Power 57-to-66GHz Transceiver in 40nm LP CMOS with -

17dB EVM at 7Gb/s,” IEEE ISSCC, pp. 268-269, Feb. 2012.

[7] T. Mitomo, et al., “A 2Gb/s-Throughput CMOS Transceiver Chipset with In-Package

Antenna for 60GHz Short-Range Wireless Communication,” IEEE ISSCC, pp. 266-267,

Feb. 2012.

[8] V. Vidojkovic, et al., “ A Low-Power Radio Chipset in 40nm LP CMOS with

Beamforming for 60GHz High-Data-Rate Wireless Communication,” IEEE ISSCC, pp.

236-237, Feb. 2013.



References[9] T. Tsukizawa, et al., “A Fully Integrated 60GHz CMOS Transceiver Chipset Based on

WiGig/IEEE802.11ad with Built-in Self-Calibration for Mobile Applications,” IEEE

ISSCC, pp. 230-231, Feb. 2013.

[10] M. Soer, et al., "A 0.2-to-2.0GHz 65nm CMOS Receiver Without LNA Achieving

>11dBm IIP3 and <6.5dB NF," IEEE ISSCC, pp.222-223, Feb. 2009.

[11] C. Andrews, and A.C. Molnar, "A Passive-Mixer-First Receiver with Baseband-

Controlled RF Impedance Matching, < 6dB NF, and > 27dBm Wideband IIP3," IEEE

ISSCC, pp. 46-47, Feb 2010.

[12] R. Carvajal, et al., “The Flipped Voltage Follower: A Useful Cell for Low-Voltage Low-

Power Circuit Design,” IEEE Trans. CAS-I, Vol. 52, No. 7, pp. 1276-1291, July 2005.

[13] K. Okada, et al., “Full Four-Channel 6.3-Gb/s 60-GHz CMOS Transceiver with Low-

Power Analog and Digital Baseband Circuitry,” IEEE JSSC, Vol. 48, No. 1, pp.46-65,

Jan. 2013.



Backup slides



Setup for TX Measurement

Symbol rate: 1.76GS/s (1ch), 7.04GS/s (4ch bonding)

Roll-off factor: 25% for WiGig spectrum mask

RF board

(TX mode)

Power supply

Oscilloscope

Tektronix DSA73304D

(33-GHz BW, 100GS/s)

Isolator

Signal Generator

Agilent E8257D

Spectrum Analyzer

Agilent E4448A

Millitech MixerMXP-15-RFSFL

Divider6GHz

ATT

Attenuator

Pre-amplifierB&Z BZP140UD1

(0.1GHz-40GHz)

fLO-6GHz(e.g. 54.48GHz)

Arbitrary Waveform Generator

Tektronix AWG70002A

(25GS/s)

Controlsignals

36MHz ref.



Measurement Results

-15

-10

-5

0

5

10

15

20

25

-25 -20 -15 -10 -5 0 5 10 15

Output power of Tx

Pin [dBm]

Pout[d

Bm

] , C

G [d

B]

Pout

CG

Conversion gain of Rx

Frequency [GHz]

0

5

10

15

20

25

30

35

40

57.24 59.4 61.56 63.72 65.88

CG

[d

B]

ch. 1 ch. 2 ch. 4ch. 3

-80

-60

-40

-20

0

20

40

60

-60 -50 -40 -30 -20

Output power of Rx

Pin [dBm]

SN

DR

[d

B]

Pout, I

M3, N

ois

e F

loo

r [d

Bm

]

SNDR

Pout

IM3Noise Floor

Conversion gain of Tx

Frequency [GHz]

0

5

10

15

20

25

30

35

40

57.24 59.4 61.56 63.72 65.88

CG

[d

B]

ch. 1 ch. 2 ch. 4ch. 3

Documents

A 64-QAM 60GHz CMOS Transceiver with 4-Channel · PDF file20.3: A 64-QAM 60GHz CMOS Transceiver with 4-Channel Bonding © 2014 IEEE ... 20.3: A 64-QAM 60GHz CMOS Transceiver with 4-Channel