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Philips Semiconductors Product specification

Triacs BT139 series Esensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT

triacs in a plastic envelope, intendedfor use in general purpose BT139- 500E 600E 800Ebidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 Vcontrol applications, where high voltagessensitivity is required in all four IT(RMS) RMS on-state current 16 16 16 Aquadrants. ITSM Non-repetitive peak on-state 140 140 140 A

current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800VDRM Repetitive peak off-state - 500

1 6001 800 Vvoltages

IT(RMS) RMS on-state current full sine wave; Tmb 99 C - 16 A

ITSM Non-repetitive peak full sine wave; Tj = 125 C prioron-state current to surge; with reapplied VDRM(max)t = 20 ms - 140 At = 16.7 ms - 150 A

I2t I2t for fusing t = 10 ms - 98 A2sdIT/dt Repetitive rate of rise of I TM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/striggering T2+ G+ - 50 A/ s

T2+ G- - 50 A/ sT2- G- - 50 A/ sT2- G+ - 10 A/ s

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WT

stgStorage temperature -40 150 C

Tj Operating junction - 125 Ctemperature

T1T2

G1 2 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 15 A/s.

February 1996 1 Rev 1.100

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THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 1.2 K/Wjunction to mounting base half cycle - - 1.7 K/W

Rth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient

STATIC CHARACTERISTICSTj = 25 C unless otherwise stated


IGT Gate trigger current VD = 12 V; IT = 0.1 AT2+ G+ - 2.5 10 mAT2+ G- - 4.0 10 mAT2- G- - 5.0 10 mAT2- G+ - 11 25 mA

IL Latching current VD = 12 V; IGT = 0.1 AT2+ G+ - 3.2 30 mAT2+ G- - 16 40 mAT2- G- - 4.0 30 mAT2- G+ - 5.5 40 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 4.0 30 mAVT On-state voltage IT = 20 A - 1.2 1.6 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 C 0.25 0.4 - VID Off-state leakage current VD = VDRM(max); Tj = 125 C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICSTj = 25 C unless otherwise stated


dVD/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 C; - 50 - V/ soff-state voltage exponential waveform; gate open circuit

tgt Gate controlled turn-on ITM = 20 A; VD = VDRM(max); IG = 0.1 A; - 2 - stime dIG/dt = 5 A/s


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Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where = conduction angle.

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp 20ms.

Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb 99C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25C), versus junction temperature Tj.

0 5 10 15 200

5

10

15

20

25

= 180

120

90

60

30

BT139

IT(RMS) / A

Ptot / W Tmb(max) / C

125

119

113

107

101

95

1

-50 0 50 100 1500

5

10

15

20BT139

99 C

Tmb / C

IT(RMS) / A

10us 100us 1ms 10ms 100ms10

100

1000BT139

T / s

ITSM / A

TITSM

time

I

Tj initial = 125 C max

T

dI /dt limitT

T2- G+ quadrant

0.01 0.1 1 100

10

20

30

40

50BT139

surge duration / s

IT(RMS) / A

1 10 100 10000

50

100

150BT139

Number of cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 125 C max

T

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6BT136

Tj / C

VGT(Tj)VGT(25 C)


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Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

Fig.12. Typical, critical rate of rise of off-state voltage,dVD/dt versus junction temperature Tj.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3BT139E

Tj / C

T2+ G+T2+ G-

T2- G-T2- G+

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 2 2.5 30

10

20

30

40

50BT139

VT / V

IT / A

Tj = 125 CTj = 25 C

typ max

Vo = 1.195 VRs = 0.018 Ohms

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3TRIAC

Tj / C

IL(Tj)IL(25 C)

0.001

0.01

0.1

1

10BT139

tp / s

Zth j-mb (K/W)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tpP

t

D

unidirectional

bidirectional

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3TRIAC

Tj / C

IH(Tj)

IH(25C)

0 50 100 1501

10

100

1000

Tj / C

dVD/dt (V/us)


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MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".

10,3

max

3,7

2,8

3,03,0 max

not tinned

1,3

max

(2x)

1 2 3

2,4

0,6

4,5max

5,9min

15,8max

1,3

2,54 2,54

0,9 max (3x)

13,5min


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DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.


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