42
06/23/22 1 VLSI Physical Design Automation Prof. David Pan [email protected] Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

9/17/2015 1 VLSI Physical Design Automation Prof. David Pan [email protected] Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

Embed Size (px)

Citation preview

Page 1: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

04/19/23 1

VLSI Physical Design Automation

Prof. David Pan

[email protected]

Office: ACES 5.434

Lecture 2. Review of Device/VLSI/Algorithm

Page 2: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

204/19/23

Objective of this Lecture

To review the materials used in fabrication of VLSI devices.

To review the structure of devices and process involved in fabricating different types of VLSI circuits

To review the basic algorithm concepts

To level-set everyone so that we can get into serious Physical Design topics in the next lecture

Page 3: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

304/19/23

Wafer, Die and Package

Page 4: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

404/19/23

Fabrication Materials

copper

Page 5: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

504/19/23

Electron and Holes

Holes travel as do electrons

Material can be enriched in holes or electrons by introducing impurities

Holes in crystals can be enriched by embedding some boron atoms

Electrons in crystals can be enriched by embedding phosphorus atoms

Recent breakthroughs: strained silicon (IBM) to stretch silicon such that electrons experience less resistance and flow up to 70% faster

Free Electron

Silicon atom

+Ion

Holehttp://researchweb.watson.ibm.com/resources/press/strainedsilicon/

Page 6: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

604/19/23

The Three Regions in a n-p Junction

A mask is a specification of geometric shapes that need to be created on a certain layer. Masks are used to create a specific patterns of each material in a sequential manner and create a complex pattern of several layers

Electron rich Interface Hole rich

Carrier-depletion zone

Mask

Silicon dioxide insulator

PhosphorousDepletion

zone

Substrate( a ) ( b ) ( c )

Formation of a Diffused Junction

Page 7: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

704/19/23

A nMOS Transistor

Enhancement Mode

Source Gate Drain Channel

Gate

Source Drain

Vg<Vt VgVt

Vs VsVd Vd

( c )

( a ) ( b )

Page 8: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

804/19/23

Fabrication of VLSI Circuits

1. Create2. Define3. Etch

Material formation by deposition, diffusion or implantation

Pattern definition by photolithography

Etch

8 to 10 iterations

Silicon wafers

Page 9: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

904/19/23

Photolithographic Process

Photo mask with opaque feature

Silicon dioxide

Photoresist (Negative )

Silicon

Hardened Photoresist

Shadow of mask feature

Silicon dioxide etched where exposedPhotoresist

stripped

( a ) ( b )

( c )( d )

( e )

UV Radiation

Page 10: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1004/19/23

Details of Fabrication ProcessesCrystal growth & wafer preparation

Epitaxy

Dielectric & polysilicon film deposition

Oxidation

Diffusion

Ion implantation

Lithography

Etching

Packaging

Page 11: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1104/19/23

Basic Design Rules

1. Size Rules2. Separation Rules3. Overlap Rules

Basic nMOS Design Rules

Diffusion Region WidthPolysilicon Region WidthDiffusion-Diffusion SpacingPoly-Poly SpacingPolysilicon Gate ExtensionContact ExtensionMetal Width

22

3

22

3

Page 12: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1204/19/23

Size and Separation Rules

Incorrectly and Correctly Formed Channels

Diffusion

Short

Poly

Incorrectly formed

Channel

Correctly formed

Metal

Diffusion Poly

Page 13: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1304/19/23

Overlap Rules for Contact cuts

( a ) ( b )

Page 14: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1404/19/23

Layout of Basic Devices

nMOS Inverter

CMOS Inverter

nMOS NAND Gate

CMOS NAND Gate

nMOS NOR Gate

CMOS NOR Gate

Complicated devices are constructed by using basic devices

Page 15: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1504/19/23

A CMOS Inverter

Page 16: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1604/19/23

A CMOS NAND Gate

Page 17: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1704/19/23

A CMOS NOR Gate

Page 18: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1804/19/23

Additional Fabrication Factors

Scaling

Parasitic Effects

Yield Statistics and Fabrication Costs

Delay Computation

Noise and Crosstalk

Power Dissipation

Page 19: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

1904/19/23

Mini Summary

The three types of materials are insulators, conductors and semiconductors

A VLSI chip consists of several layers of different materials on a silicon wafer.

Each layer is defined by a mask

VLSI fabrication process patterns each layer using a mask

Complex VLSI circuits can be developed using basic VLSI devices

Design rules must be followed to allow proper fabrication

Several factors such as scaling, parasitic effects, yield statistics and fabrication costs, delay computation, noise and crosstalk and power dissipation play a key role in fabrication of VLSI chips

Page 20: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2004/19/23

Complexity of VLSI circuits

Full custom

Performance Size Cost Market time

Standard Cell Gate Array FPGA

Different design styles

Cost, Flexibility, Performance

Design Styles

Page 21: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2104/19/23

Full Custom Design Style

Pad Metal Via Metal 2

I/OData Path

ROM/RAM

PLA

A/D ConverterRandom logic

Page 22: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2204/19/23

Standard Cell Design Style

VDD Metal 1Cell

Metal 2Feedthrough

GND

D C C B

A C C

D C D B

C C C B

Cell A

Cell C

Cell B

Cell D Feedthrough cell

Page 23: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2304/19/23

Gate Array Design Style

A

B

C

A

B

C

VDD Metal1 Metal2

Page 24: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2404/19/23

FPGA Design Style

Page 25: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2504/19/23

Programmable logic Programmable interconnects Programmable inputs/outputs

Field-Programmable Gate-Arrays (FPGAs)

Page 26: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2604/19/23

Comparisons of Design Styles

full-custom standard cell gate array FPGA

cell size variable fixed height * fixed fixed

cell type variable variable fixed programmable

cell placement variable in row fixed fixed

interconnections variable variable variable programmable

* uneven height cells are also used

style

Page 27: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2704/19/23

Area

Performance

Fabrication layers

style

full-custom standard cell gate array FPGA

compact

high

compact

to moderatemoderate large

high to moderate

moderate low

ALL ALL routing layers

none

Comparisons of Design Styles

Page 28: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2804/19/23

Printed Circuit Board PCB

Multi-Chip Module MCM

Wafer Scale Integration WSI (SOC)

Packaging

Area

Performance, cost

The increasing complexity and density of the semiconductor devices are driving the development of more advanced VLSI packaging and interconnection approaches.

Packaging Styles

Page 29: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

2904/19/23

History of VLSI Layout ToolsYear Design Tools

1950 - 1965 1965 - 1975 1975 - 1985 1985 – 1995 1995 – 2002 2002 - present

Manual Design

Layout editors Automatic routers( for PCB) Efficient partitioning algorithm Automatic placement tools Well Defined phases of design of circuits Significant theoretical development in all phases Performance driven placement and routing tools Parallel algorithms for physical design Significant development in underlying graph theory Combinatorial optimization problems for layout Interconnect layout optimization, Interconnect-centric design, physical-logical codesign Physical synthesis with more vertical integration for design closure (timing, noise, power, P/G/clock, manufacturability)

Page 30: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3004/19/23

Now You Need Algorithms

• To put devices/interconnects together into VLSI chips• Fundamental questions: How do you do it smartly?• Definition of algorithm in a board sense: A step-by-

step procedure for solving a problem. Examples:– Cooking a dish– Making a phone call– Sorting a hand of cards

• Definition for computational problem: A well-defined computational procedure that takes some value as input and produces some value as output

Page 31: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3104/19/23

• Input: An array of n numbers D[1]…D[n].• Output: An array of n numbers E[1]…E[n] such that

E[1] E[2] … E[n].

• Algorithm: 1. For i from 1 to n do

2. Select the largest remaining no. from D[1..n].

3. Put that number into E[i].

Example: Selection Sort

Page 32: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3204/19/23

Some Algorithm Design Techniques

• Greedy• Divide and Conquer• Dynamic Programming• Network Flow• Mathematical Programming (e.g., linear programming,

integer linear programming)

Page 33: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3304/19/23

Reduction

• Idea: If I can solve problem A, and if problem B can be transformed into an instance of problem A, then I can solve problem B by reducing problem B to problem A and then solve the corresponding problem A.

• Example:– Problem A: Sorting– Problem B: Given n numbers, find the i-th largest numbers.

Page 34: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3404/19/23

Analysis of Algorithm

• There can be many different algorithms to solve the same problem.

• Need some way to compare 2 algorithms.• Usually run time is the most important criterion used

– Space (memory) usage is of less concern now

• However, difficult to compare since algorithms may be implemented in different machines, use different languages, etc.

• Also, run time is input-dependent. Which input to use?• Big-O notation is widely used for asymptotic analysis

Page 35: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3504/19/23

Big-O Notation

• Consider run time for the worst input=> upper bound on run time.

• Express run time as a function input size n.• Interested in the run time for large inputs.• Therefore, interested in the growth rate.• Ignore multiplicative constant.• Ignore lower order terms.

• 3n2+6n+2.7 is O(n2).• n1.1+10000000000n is O(n1.1).• n1.1 is also O(n2), but to be more precise, it is O(n1.1)

Page 36: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3604/19/23

Effect of Multiplicative Constant

0

100

200

300

400

500

600

700

800

0 10 20 n

Ru

n t

ime

n2

10n

Page 37: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3704/19/23

Growth Rates of some Functions

n

nnn

nn

ncc

nOnO

OOO

OnO

cOnO

nOnO

nOnOnnOnnO

nOnOnOnO

!

432

2

constant any for 2

loglog

loglog

2loglog

log

43

25.12

2

n

nnn

nn

ncc

nOnO

OOO

OnO

cOnO

nOnO

nOnOnnOnnO

nOnOnOnO

!

432

2

constant any for 2

loglog

loglog

2loglog

log

43

25.12

2

ExponentialF

unctionsP

olynomial

Functions

Page 38: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3804/19/23

Problem of Exponential Function

• Consider 2n, value doubled when n is increased by 1.

• If you borrow $10 from a credit card with APR 18%, after 40 yrs, you will own $12700!

n 2n 1s x 2n

10 103 0.001 s

20 106 1 s

30 109 16.7 mins

40 1012 11.6 days

50 1015 31.7 years

60 1018 31710 years

Page 39: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

3904/19/23

NP-Complete

• The class NP-Complete is the set of problems which we believe there is no polynomial time algorithms.

• Therefore, it is a class of hard problems.• NP-Hard is another class of problems containing the

class NP-Complete.• If we know a problem is in NP-Complete or NP-Hard,

there is no hope to solve it efficiently.

Page 40: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

4004/19/23

NP-Complete

• I can't find an efficient algorithm, I guess I'm just too dumb.

• I can't find an efficient algorithm, but neither can all these famous people.

• I can't find an efficient algorithm, because no such algorithm is possible.

Source: Computers and Intractibility by Garey and Johnson

Page 41: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

4104/19/23

Solution Type of Algorithms

• Polynomial time algorithms• Exponential time algorithms• Special case algorithms• Approximate algorithms• Heuristic algorithms

Page 42: 9/17/2015 1 VLSI Physical Design Automation Prof. David Pan dpan@ece.utexas.edu Office: ACES 5.434 Lecture 2. Review of Device/VLSI/Algorithm

4204/19/23

Before Next Class

• Refresh your Algorithms:– C. J. Alpert, D. P. Mehta, S. S. Sapatnekar, Handbook of

Algorithms for Physical Design Automation, Auerbach Publications, 2008

– T. H. Cormen, C. E. Leiserson, R. L. Rivest, C. Stein Introduction to Algorithms, MIT Press, 2009 (3rd edition)

• Circuit partitioning in the next class