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YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University 3D Memory Cells Yi-Chang Lu Graduate Institute of Electronics Engineering National Taiwan University, Taipei, Taiwan

3D Memory Cells

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3D Memory Cells. Yi-Chang Lu Graduate Institute of Electronics Engineering National Taiwan University, Taipei, Taiwan. Contents. Sources Li et al. , “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability , Vol. 4, No. 3 pp. 416-421, Sep 2004. - PowerPoint PPT Presentation

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YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

3D Memory Cells

Yi-Chang Lu

Graduate Institute of Electronics Engineering

National Taiwan University, Taipei, Taiwan

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Contents

• Sources

– Li et al., “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability, Vol. 4, No. 3 pp. 416-421, Sep 2004.

– Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

OTP Antifuse

• Cross-section and illustration

Li et al., “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability, Vol. 4, No. 3 pp. 416-421, Sep 2004.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

OTP Antifuse

• Zoom-in

Li et al., “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability, Vol. 4, No. 3 pp. 416-421, Sep 2004.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

OTP Antifuse

• Characteristics

Li et al., “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability, Vol. 4, No. 3 pp. 416-421, Sep 2004.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

OTP Antifuse

• Breakdown characteristics

Li et al., “Evaluation of SiO2 antifuse in a 3D-OTP memory,” IEEE Trans. Device and Materials Reliability, Vol. 4, No. 3 pp. 416-421, Sep 2004.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• SRAM Cell

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

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YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• Layout

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• Layout

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• Store, restore, and reset

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• Results

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.

YC Lu 2008 Graduate Institute of Electronics Engineering, National Taiwan University

Nonvolatile SRAM

• Characteristics

Wang et al., “Nonvolatile SRAM cell,” IEEE International Electron Devices Meeting Technical Digest, Dec 2006.