2014 03 19 OMMIC Microwave&RF presentationmicrowave-rf.com/docs/PRESENTATION_OMMIC_14_h00_a... · 2014 03 19 OMMIC Microwave&RF presentation Author: t0032162 Created Date: 3/20/2014

OMMIC Innovating with III-V’s

OMMIC

OMMIC


OMMIC

Mixed D/A ED02AH process for radar control functions and new GaN/Si for hyper-frequency power applications


OMMIC

Europe’s Independant IIIV Full-Service Foundry

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ISO9001 version 2000, ISO14001 version 2004 Registered Company

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OMMIC

OMMIC PROCESS

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OMMICmars 14


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OMMIC ED02AH D/A mixed process for control functions


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Introduction

•III/V provide optimum trade-offs in terms NF, gain, power and linearity for various applications including wireless telecommunication infrastructure, security scanners, radars and instrumentation.

•A weaker feature of III/V technologies � limited level of integration.

We will show how E/D PHEMT processes enable the integration of analogue functions like phase shifters and attenuators with serial to parallel converters

All integrated on the same chip to achieve state of the art performance through the example of Corechips.

E/D Serial ctrl High integration cost reduction


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Electonically steerable antenna example

The side lobes may then be controlled by variable attenuators attached to each element

The orientation of the beam is obtained by the use of variable phase shifters attached to each radiating element


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Electonically steerable antenna example

Digital C

ontol

Each antenna element may contain :•A variable phase shifter•A variable attenuator•Switches, to be able to use the samesystem in receive or transmit modes•Amplifiers:to compensate the losses and createsome gain,to reduce the noise in receive mode,to create enough power to drive power amplifiers in transmit mode


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From single function to multiple function chip

Due to higher frequency of radar application , integration of functions become a key aspect of designs. Below is the X band example

Single functions already exists

LNA Dig Ph Shifters Dig Attenuators MPA

X band LNA

32dB gain 1.1dB NF

X band Attenuator

6 bit parallel control

X band Ph shifter


X band MPA

23dBm Psat

3.74mm² 5.1mm² 3.12mm² 2.9mm²


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Serial Interface need : 6 bit corechip example

With 12 bits (or more) for a full core chip, we are faced with a connection problem:

Up to 24 pads (2 per bit if +/- control is required) to drive the 12 bits

24 bonding wires per circuit, multiplied by hundreds of

circuits

The solution is to place the SIPO on the chip

Only one PIN to control all bits through Serial Input Parallel Output


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From single function to multiple function chip

Due to higher frequency of radar application , integration of functions become a key aspect of designs. Below is the X band example

Single functions already exists

LNA Dig Ph Shifters Dig Attenuators MPA

X band LNA

32dB gain 1.1dB NF

X band Attenuator


X band Ph shifter


X band MPA

23dBm Psat

3.74mm² 5.1mm² 3.12mm² 2.9mm²


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Multiple Cascaded devices : The SIPO Advantage

SIPO

Clock

Phase

Control

Amplitude

control

Data outSIPO

Phase

Control

Amplitude

control

SIPO

Phase

Control

Amplitude

control

N devices to control :

2 x 6 x N wires for Parallel controled devices

Only 3 wires for cascaded SIPO enabled devices

Data In

Latch Enable

6 6 6 6 6 6


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How to realize the SIPO

Efficient SIPO on chip requires Enhancement mode pr ocess

With D-mode transistorsRequires negative supply + DC

level shifting

With E-mode transistorsDirect coupling


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OMMIC E/D process : ED02AH

•Hetero-epitaxy with a pseudomorphic (GaInAs) active layer•0.18µm gate length (60 GHz Ft)•Depletion and Enhancement mode recessed transistors: Vt=0.225V or -0.9V•2 types of diodes (0.18µm "GM" and 3µm "BE") for mixing, level shifting, or varactors.•3 types of Resistors : 40, 200 or 500 Ohms.square•2 types of MIM Capacitors : 50 or 400 pF/mm2•Full SiN + SiO2 + SiN protection ensuring high reliability•SiO2/SiN + air bridge isolation between layers to reduce the parasitic capacitances.•1.25µm or 2.5µm thick gold metallisation for interconnections and spiral inductors.•Via holes through the 100µm substrate to reduce parasitic inductances to ground.


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Examples of SIPOs

26 bits SIPO


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Examples of X band Corechips


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Examples of X band Corechips

Separated register for Rx and Tx

External additional attenuators


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Nowadays brand new 35GHz Corechip

Rx / TxRx / TxRx / TxRx / TxTxTxTxTx out

PA

CGY2138UH

T/R Chip

OMM9650UH

Core Chip

CGY2350UH

RxRxRxRx in

Ka Band

Chipset

Serial Control

LNA

PA

Option 2

LNACGY2134UH

Tx Tx Tx Tx out

RxRxRxRx in

+

LNA

PA

5Bits

360

5.6 LSB 0.5dB LSB

31.5dB

G : 30dBNF : 1,1dB

G : 26dBNF : 3.5dB

G : 26dBP.Sat : 25dBm

G : 19dBP.sat : 37dBm

-20-19-18-17-16-15-14-13-12-11-10-9-8-7-6-5-4-3-2-10

34 34,2 34,4 34,6 34,8 35 35,2 35,4 35,6 35,8 36

Frequency(GHz)

Att

enua

tion

(dB

)

-360,00-340,00-320,00-300,00-280,00-260,00-240,00-220,00-200,00-180,00-160,00-140,00-120,00-100,00-80,00-60,00-40,00-20,00

0,00

34 34,2 34,4 34,6 34,8 35 35,2 35,4 35,6 35,8 36

Frequency (GHz)

Pha

se S

hift

(°)


OMMIC

OMMIC Corechip offer • More than 15 Core chip in production from C band to Ka Band • More than 40 Custom Corchip designed for customers

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Packaged in HTCC QFN

Packaged version in dev


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future control function


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OMMIC

mmW GaN HEMT on Si : Goal

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The choice of a GaN heterostructure on Si is dictated by the following points:

• Increase power density 3 times the current GaAs technology

• Address applications up to 20W, compatible with the Si Thermal conductance, primarily targeting frequency bands from 15 GHz and 100 GHz .

• Access to the epitaxial material without depending on SiC sources

• Full replacement of GaAs processes for professional applications up to 100GHz at a lower cost/mm2


OMMIC

mmW GaN HEMT on Si

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OMMIC

Advanced release of GaN/Si process

Preliminary Design Kit available under ADS or AWR

D01GH :

Applications :

• High frequency Power Amplifiers 10GHz to 94 GHz

• Robust Low Noise Amplifiers (< 20 GHz)

• Robust Control Functions

• High Linearity Mixersmars 14


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0.11 µm gate (GaN on Si)


OMMIC

D01GH Key power applications and targets

• Scaled GaN /Si ( 30% shorter gate) can replace GaAs and InP for power applications with following power capability :

• 1 W @ 94GHz

• 6 W @ 45GHz• 12 W @ 30GHz

• 25 W @ 10GHz

• 3 KEY features are required :

• In situ SiN passivation ( reduced lag effects in planar structure)• Si substrate with proprietary buffer and extension to 6 inch• Regrown ohmics ( for high gm and low noise)

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OMMIC

D01GH PROCESS FLOW

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2x70um HEMT


OMMIC

Thank you for your attention

Documents

2014 03 19 OMMIC Microwave&RF presentationmicrowave-rf.com/docs/PRESENTATION_OMMIC_14_h00_a... · 2014 03 19 OMMIC Microwave&RF presentation Author: t0032162 Created Date: 3/20/2014