(2) Advancements in P.es - Copy

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POWER ELECTRONICSPOWER ELECTRONICS

INTRODUCTION TOINTRODUCTION TO

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Dr M R AbroDr M R Abro


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POWER ELECTRONICSPOWER ELECTRONICS

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ELECTRONICSELECTRONICS COTROLCOTROLPOWERPOWER


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Power ElectronicsPower Electronics

Definition:Definition:

ItIt involvesinvolves thethe studystudy ofof electronicelectronic circuitscircuits intendedintended toto

controlcontrol thethe flowflow ofof electricalelectrical energyenergy.. TheThe circuitscircuits handlehandle

powerpower flowflow atat levelslevels muchmuch higherhigher thanthan thethe individualindividual

devicedevice ratingsratings.. (M(M.. HH.. Rashid,Rashid, HandHand BookBookP#P#11))

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OROR

ItIt isis defineddefined asas toto controlcontrol && convertconvert electricalelectrical powerpower byby

thethe applicationapplication ofof converterconverter topologiestopologies incorporatingincorporating thethematrixmatrix ofof switchingswitching devicesdevices underunder thethe guidanceguidance ofof controlcontrol

electronicselectronics..


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History of Power Electronics:History of Power Electronics: ItIt beganbegan withwith thethe introductionintroduction ofof mercurymercury arcarc rectifierrectifier inin

19001900

ThenThen metalmetal tanktank rectifier,rectifier, gridgrid controlledcontrolled vacuumvacuum tubetuberectifier,rectifier, ignitron,ignitron, phanotronphanotron && thyratronthyratron werewere introducedintroducedgraduallygradually andand thesethese devicesdevices werewere appliedapplied forfor powerpower controlcontroluntiluntil 19501950ss

TheThe firstfirst electronicselectronics revolutionrevolution beganbegan inin 19481948 withwith thethe

inventioninvention ofof siliconsilicon transistortransistor atat BellBell TelephoneTelephoneLaboratoriesLaboratories

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PNPNPNPN triggeringtriggering transistor,transistor, whichwhich waswas letterletter calledcalled asas aathyristorthyristor oror siliconsilicon controlledcontrolled rectifier,rectifier, waswas inventedinvented byby BellBellTelephoneTelephone LaboratoriesLaboratories inin 19561956

TheThe secondsecond electronicselectronics revolutionrevolution beganbegan withwith thethedevelopmentdevelopment ofof thethe commercialcommercial thyristorthyristor byby thethe GeneralGeneralElectricElectric CompanyCompany && thusthus thethe newnew eraera ofof PowerPower ElectronicsElectronicsbeganbegan.. SinceSince then,then, manymany differentdifferent typestypes ofof semiconductorsemiconductordevicesdevices andand conversionconversion techniquestechniques havehave beenbeen introducedintroduced


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Power Electronics as a Multi Disciplinary Technology

Power

ConverterCircuits

SignalProcessing

ElectricalMachines

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PowerElectronics

SemiconductorDevices

ControlTheory

MicroComputers

VLSI Circuits

Computer AidedDesign Techniques


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Recent Advances in Power Electronics

SemiconductorDevices

Converter

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Circuits

Control of

PowerElectronics


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Four generations of Solid-State Power- Electronics

First generation (1958-1975) (Thyristor Era)

Diode Thyristor

TRIAC

Second Generation (1975-1985)

Power BJT

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Power MOSFET

GTO

Microprocessor

ASIC

PIC

Advance Control


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Classification of Semiconductor Devices

Semiconductor devices can be classified into three categoriesaccording to their degree of controllability:

Un-controlled turn-on and off devices (e.g. Diodes).

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Controlled turn-on and uncontrolled turn-off (e.g. SCR).

Controlled turn-on and off (e.g. BJT, SITH, MOSFET, GTO,

IGBT, SIT,MCT).


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Different Features of Semiconductor Devices

Devices which can with stand

Unipolar voltage

BJT, MOSFET, IGBT and MCT

Devices which can with stand

bipolar voltageSCR & GTO

Devices which requires continuoussignal for keeping them in turn-on BJT, MOSFET, IGBT and SIT

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state

Devices which requires pulse-gate

signal for turning them on & once

these devices are on then gate

pulse is removed

SCR, GTO, SITH and MCT

Devices which posses bidirectional

current capabilityTRIAC and RCT

Devices which posses

unidirectional current capability

Diode, SCR, GTO, BJT, MOSFET,

IGBT, SIT, SITH, MCT


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CLASSIFICATION OF SEMICONDUCTOR DEVICES

Thristors

Line Commutated

GATTGeneral Purpose

Power Semiconductor

Devices

Power Semiconductor

Devices

Power Diodes Power Transistors

Power BJTs

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ForcedCommutated

TRIAC

GTO IGCT

MCT

LASCR

RCT ETO

MTO

Schottky

Fast Recovery Power MOSFET

IGBT

SIT

SITH


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POWER DIODES

SCHOTTKY DIODE: Voltage/Current Ratings: 100V/300A Switching Time (S): 0.23

On Voltage/Current: 0.58V/60A

Anode

Semiconductor

Cathode

Metal

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Very small recovery time (typical of nanoseconds)

The leakage current increases with the voltage ratings &their ratings are limited to 100V

These are ideal for high current & low power voltage dcchopper supplies


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POWER TRANSISTORS

Power BJT:Voltage/Current Rating: 1200V/800A It is a current controlled bi-polar two junction device.

Switching speed is considerably faster than that of thyristor-type devices.

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Fa nto o so escence ue to a vent o IGBT.

Power MOSFET:Voltage/Current Rating: 600V/400A

It is unipolar & voltage controlled device It is faster of all the devices It can operate in hundreds of KHz switching frequency It is commonly used in high frequency switching mode power

supplies It is not used in high power converters because of large

conduction losses


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POWER TRANSISTORS

IGBT:

Voltage/Current Rating: 3500V/1200A

It is basically a hybrid MOS-gated turn-off bipolar

transistor

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It was commercially introduced in 1983

It is faster than that of BJT

It can operate in medium power upto 20KHz switching

frequency It is finding popularity & will replace BJT in majority of

applications in near future


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POWER TRANSISTORS

IGBT (Continued):

The invention of IGBT is an important milestone in the history of Power Semiconductordevices.

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6.5KV & 10KV devices are under test inlaboratory.

IGBT Intelligent Power Module (IPM): This device is available for 6000V, 50-300A &

1200V, 50-150A to cover up to 150hp ac driveapplications.


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POWER TRANSISTOR

SIT:

Voltage/Current Rating: 1200V/10ASwitching Time (S): 0.55

It is hi h ower hi h fre uenc device

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It is solid state version of a triode vacuumtube

It was commercially introduced by TOKINCorp in 1987

It is used in AM/FM transmitters, inductionheating, high voltage low current powersupplies


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THYRISTORS

Line or Natural Commutated Thyristors:Voltage/Current Ratings: 8000V/4500A

Switching Time (S): 10 to 20 in a 3000V, 3600A Thyristor

These are turned off due to the sinusoidal nature of input voltage

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Forced Commutated Thyristors:These are turned off by an extra circuit called commutation circuitry

TRIAC:Voltage/Current Ratings: 1200V/300AOn Voltage/Current: 1.5V/420A

Its characteristics are similar to two thyristors connected inparallel & having only one gate terminal

The current flow through it can be controlled in either direction These are widely used in all types of simple heat controls, light

controls, motor controls & AC switches


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THYRISTORS

GTO:

Voltage/Current Ratings: 6000V/6000A (Mitsubishi) .

Switching Time (S): 25

On Voltage/Current: 2.5V/1KA

It is self turned off thyristor.

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t oes not requ re any commutat on c rcu t.

It is used for commutation converters.

Pushed the VFI from the market.

RCT:Voltage/Current Ratings: 2500V/1000A Switching Time (S)

On Voltage/Current: 2.1V/1KA

It is connected as a thyristor with an inverse parallel diode

These are used for high speed switching (traction applications)


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Thyristors

SITH: Voltage/Current Ratings: 4000V/2200A Switching Time (S): 6.5

On Voltage/Current: 2.3V/400A

It is self controlled GTO like device

It was commercially introduced by TOYO Co. in 1988

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These are applied for medium power converters withfrequency of several hundreds of kilo hertz beyond thefrequency of GTO

GATT:Voltage/Current Ratings: 1200V/400A Switching Time (S): 8On Voltage/Current: 2.8V/1.25KA

These are used for high speed switching, specially intraction applications


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Thyristors

LASCR:Voltage/Current Ratings: 600V/1500A Switching Time (S): 200-400On Voltage/Current: 2.4V/4.5A

These are suitable for high voltage system applications,

specially in HVDC systems The four layer PNPN construction is similar to that of ordinary

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w one excep on- e unc ons are orme on asilicon pellet in an elongated manner to permit radiations by alight source

MCT:

Voltage/Current Ratings: 4500V/250A, 900V/15A, 1000V/30A, 600V/60A It is a thyristor like trigger into conduction device that can be

turned on or off by a short pulse on the MOS gate This was introduced by General Electrical Company in

November 1988 It is like a GTO, except that the turn-off gain is very high


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Thyristor

IGCT:

Available with 6000V, 6000A (10KV devices are under test)

It integrates a gate-commutated thyristor (GCT) with a

multilayered printed circuit board gate drive

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e s a ar -sw c e w a very as arge ga ecurrent pulse, as large as the full rated current, that draws out allthe current from cathode into the gate in about 1S to ensure afast turn-off

Similar to GTO, the IGCT is turned on by applying the turn-oncurrent to its gate

The IGCT is turned off by a multilayered gate driver circuit boardthat can supply a fast rising turn-off pulse (i.e., a gate current of4KA/S with a gate cathode voltage of 20V only)


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Thyristor

Reverse Blocking IGCT :

Available with 6000V, 800A is introduced very recentlyby ABB for use in IFI drives.

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:

It is a MOS-GTO hybrid device that combines theadvantages of both the GTO & MOSFET

ETOs with current rating of up to 4KA & voltage ratingof up to 6KV have been demonstrated


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Thyristor

MTO:

It is a combination of a GTO & a MOSFET, which together

overcome the limitations of the GTO turn-off ability

Its structure is similar to that of a GTO and retains the

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4000A)

Can be used in high power application ranging from 1 to 20MVA


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TINGS

PRODUCT(VI)

1 0 5

1 0 6

1 0 7

1 0 8

IG B T

D I S C R E T E

IG C T

G T O

IG B T IP M

Power FrequencyTrends of the Devices

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S W IT C H IN G F R E Q U E N C Y (H z )

DEVICE

V-IRA

1 0 ! 0 2 1 0 3 1 0 4 1 0 5 1 0 61 0

1 0 2

1 0 3

1 0 4

T R IA C

T H Y R IS T O R

P O W E R

M O S F E T


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Types of Power Electronic Circuits:Types of Power Electronic Circuits:

ForFor thethe controlcontrol ofof electricelectric powerpower thethe conversionconversionofof electricelectric powerpower fromfrom oneone formform toto anotheranother isisnecessarynecessary andand thethe switchingswitching characteristicscharacteristics ofofthethe powerpower devicesdevices permitspermits thesethese conversionsconversions..TheThe staticstatic powerpower convertersconverters performsperforms thesesthesesfunctionsfunctions ofof powerpower conversionsconversions.. AA converterconvertermaymay bebe consideredconsidered asas aa switchingswitching matrixmatrix.. TheThe

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powerpower electronicselectronics circuitscircuits cancan bebe classifiedclassified intointothethe followingfollowing typestypes::

DiodeDiode rectifiersrectifiers

ACAC--DCDC convertersconverters (controlled(controlled rectifiers)rectifiers) ACAC--ACAC convertersconverters (AC(AC voltagevoltage controllers)controllers)

DCDC--DCDC convertersconverters (DC(DC choppers)choppers)

DCDC--ACAC convertersconverters (inverters)(inverters)

StaticStatic switchesswitches


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Four basic types of converters depending upon thefunction performed

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Applications DC AND AC REGULATED POWER SUPPLIES

HIGH VOLTAGE DC SYSTEM

POWER LINE VAR AND HARMONIC COMPENSATION

ELECTRONIC WELDING

HEATING AND LIGHTING CONTROL

ELECTRO CHEMICAL PROCESSES

POWER

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MOTOR DRIVES

INDUCTION HEATING

SOLID STATE CIRCUIT BREAKER

VARIABLE SPEED CONSTANT FREQUENCY SYSTEM

PHOTOVOLTAIC AND FUEL CELL CONVERSIONSYSTEMS

Flexible AC Transmission System, FACTS


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THANKS

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(2) Advancements in P.es - Copy