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| Copyright © Gigaphoton Inc.
<KOMATSU IR-DAY 2017>
GIGAPHOTON INTRODUCTION
15th September 2017
Tatsuo EnamiDirector and Senior Executive Officer
GIGAPHOTON
DOC#: GPD2017-077
Outline of Gigaphoton Business
DOC#: GPD2017-077
∎ Light source business for semiconductor exposure
∎ Light source business for Flat Panel Display(FPD) annealing
Source: http://www. asml.com
System sales destination ASML , Nikon, Canon
Part sales destination
Semiconductor manufacturers, such as Intel, Toshiba, Samsung,TSMC
System sales destination V-Technology
Part sales destination
Liquid crystal panel manufacturers, such as SDP,BOE
Light source
Illuminator
Scan stage
Panel
Loader
Source: V-Technology brochure
Light Source for Semiconductor
Exposure
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Cutting-Edge Product Structure and Performance
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dimensions
Width 2800mmDepth 845mmHeight 2120mm
Weight 3410kgSpecifications
Wavelength 193nmAverage Output 60 - 120WPulse Energy 10 - 20mJRepetition Frequency 6000Hz
Spectrum Width (E95) 0.25pm
Technology Transition
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Excimer Exposure
0.01
0.1
1
10
1980 1985 1990 1995 2000 2005 2010
Feat
ure
size
(nm
)
G-line(436nm) I-line
(365nm)
KrF(248nm) ArF (Dry)
(193nm) ArF (immersion)(equiv. 134nm)
45nm
65nm90nm
130nm180nm
250nm350nm
750nm
1000nm
500nm
Source: ASML, Canon, Nikon
Semiconductor Market∎ Semiconductor market size is 330 $B and will grow at +3%
/year.∎ 3D NAND and IoT application will sustain a demand for
legacy KrF lasers.
DOC#: GPD2017-077
0
100
200
300
400
500
Sem
icon
duct
or m
arke
t ($
B)
PC
Notebook PC
Feature phone
SmartphoneTablet
3D-NAND IoT
0%
50%
100%
'97 '01 '05 '09 '13 '17
Ligh
t sou
rce
(%)
G-line,I-line KrF ArF
History of Excimer Lasers Development at Komatsu
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In 2000Gigaphoton was born!
1980 - The first Excimer LASER was developed atKomatsu for the Coherent Anti-StokesRaman Spectroscopy (a.k.a. CARS) system
1987 - Komatsu shipped the worldʼs first KrF excimer laser KLE-630S for lithography … 2 full Watts output !!!
1989 - Cymer enters market of Excimer lasers for lithography tools.The rivalry begins …!!!
1999 – Our first KrF laser for semiconductor manufacturing, KLES-G10K was shipped to overseas
2000 – Komatsu and Ushio developed joint venture company…Gigaphoton Inc. is founded !!!
Business Model of DUV Light Source∎ Composite business of System sales(Light source unit sales) and Part sales
(Maintenance business) Systems are sold to exposure equipment manufacturers. Upon system sales, Gigaphoton (GPI) receives a maintenance contract, called Pay-per-
pulse, from semiconductor manufacturers.*Pay-per-pulse: Charging system paid on the basis of the Laser usage (Pulse usage ×Pulse unit price)
(GPI benefits)Secure stable revenue streamPart lifetime extension enables cost reduction
(Customer benefits) Ease of cost managementMaintenance plan can be optimized to maximize utilization
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Light source unit salesExposure equipment manufacturers:
ASML, Nikon, Canon
Semiconductor manufactures:Intel, Micron, TSMC, Samsung, Global foundries, Toshiba, SK Hynix…
Exposure equipmentsales
Parts sales
Main unit sales business
Maintenance business
Optical module
GIGAPOTON groupGPK (GIGAPHOTON Korea)
GPT (GIGAPHOTON Taiwan)GPU (GIGAPHOTON USA)GPE (GIGAPHOTON Europe)GPSB (Singapore branch)KIS (China:Komatsu
Industries)
Laser discharge tube module
Cumulative Light Source Installations
0
200
400
600
800
1000
1200
1400
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Cum
ulat
ive
Inst
alla
tions
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1300 light source are under operation.
Breakdown at the end of fiscal 2016▸KrF ……………………68%▸ArF Dry ……………...8%▸ArF Immersion ………24%
Sales and Profit Trend(Non-consolidated)
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-50
0
50
100
150
200
250
300
350
2000( )
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
100
Mill
ion
Yen
(8 months)
Operating profit (loss)
Light source sales
Part sales
Priority for Exposure Light Source∎ Support for expanding Chinese
market▸In June 2014, the State Council of China issued
the "National Guideline for the Development and Promotion of the IC Industry,” to support the development of the domestic semiconductor industry.
▸ Semiconductor sales in 2015 will be increased by 40% compared with 2013, and in 2030 a number of world-class companies will be nurtured.
▸ Established "China IC Industry Fund" of 2 trillion yen
∎ Introduction of EUV light source into the market▸ Major semiconductor manufactures are
planning aggressive investment to apply EUV for 7nm to 5 nm process.
▸ Highest level of durability and reliability are required for mass production.
▸ Two suppliers only. ASML(Cymer) and Gigaphoton.
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Gigaphoton's Strategy for China Market∎ One Gigaphoton Support
▸ Gigaphoton group is organizing a cross-sectional project centered on Optical division of Komatsu Industrial Shanghai(KIS) with HQ and oversea subsidiaries in order to quickly strengthen the China business.
▸ Strengthen local sales force· Support form Gigaphoton HQ, Taiwan(GPT) and
Korea(GPK)▸ Opening of new support offices
· 6 offices (Today) 11 offices (End of FY2017)▸ Opening of Training Center
· August 2017, Gigaphoton opened a training center in order to train new service engineers at Komatsu China in Changzhou City.
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Semiconductor Roadmap & EUV Insertion
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Logi
cPe
rfor
man
ceM
emor
ySt
orag
e Cl
ass
Mem
ory
20nm 16/14nm 10nm 7nm 5nm 3nm
28-30 20-22 1X 1Y 1Z next
2X'/x2 1X"/x4 1Y"/x8 1Z"/x8
2014 2015 2016 2017 2018 2019 2020 2021 2022
EUV Production Insertion Window
DRAM
ReRAM, X-point etc.
*Source: ASML Materials
ProductionDevelopment Research Roadmap
Technology Concept of EUV Light Source ∎ High efficiency (x1/2 energy saving)
▸High conversion efficiency by Pre-Pulse Technology (picosecond YAG laser)
▸High power CO2 laser co-developed with Mitsubishi Electric∎ High durability, High reliability
▸Tin(Sn) debris mitigation with a super conductive magnetic field
Droplet Generator
IntermediateFocus
pre-pulselaser
CO2 laser
Configuration
Chamber
Liquid Sn dropletCollector Mirror
Magnet
Fine-mist(300um, liquid)
Plasma(gas)
pre-pulselaser
main-pulselaser
Emission mechanism
EUV lightEmission
Ions to betrapped by magnetic field
(Remaining atoms on mirror etched by gas)
Liquid Sn droplet(20um, liquid)
9860mm
6600mm
2300mm
Weight:30ton
Fab : Chamber
Sub fab : Laser
Transfer laser to fab
Outline view
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0
100
200
300
Out
put p
ower
(W
) Giga (R&D)Giga (R&D_Pilot)Competitor (R&D)Competitor (Product)
Target at high-volume
Target at initial production
2014H1
2014H2
2015H1
2015H2
2016H1
2016H2
2017H1
EUV Light Source Development Progress∎ Achieved 250W output power, matching with the competitor
under laboratory environment∎ Current focus is on reliability improvement at the 100 W level
(target at initial mass production) with pilot type EUV light source.
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Light Source for FPD Annealing
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Support Large-sized Glass Substrate
Size of glass substrate※1
V-Technologyʼs annealing method(PLAS※2)for large-sized panel
Competitorʼs annealing method (ELA) for small to mid-sized panel
G6X1500㎜Y1850㎜
○ Capable ○ Capable
G8X2200㎜Y2400㎜
○ Capable (No track record)※3
G10 SDPX2880㎜Y3130㎜
○ Capable (No track record)
G10.5 BOEX2940㎜Y3370㎜
○ Capable (No track record)
※1 Size of glass substrate (Above figure)※2 PLAS : Partial Laser Anneal Silicon※3 Our competitorʼs line beam method has no track record for glass substrate larger than G6 due to the size limitation of the irradiation optical system
G10.5 2940㎜ × 3400㎜
G8 2160㎜ × 2400㎜
G7 1870㎜ × 2200㎜
G6 1500㎜ × 1800㎜
G5 1100㎜ × 1250㎜
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∎ Glass substrate has become larger along with upsizing TV screen.∎ Our competitor cannot support beyond G6 due to their annealing optical system design.∎ Glass substrate larger than G6 size is currently under development by a novel method
by our partner, V-Technology company.
Features of Light Source for FPD Annealing
Application FPD annealing Semiconductor exposureType GT600K GT64A
Appearance※FPD annealing laser has a new
and different panel color.
SpecificationsWavelength 248nm 193nm
Repetition Rate 6000Hz 6000HzPulse Energy 100mJ 10mJ Output Power 600W 60W
New Head Office Building Completed∎ Manufacturing capacity expansion (x1.4) to support increasing
light source demand∎ Improvement of office environment
| Copyright © Gigaphoton Inc.
THANK YOU
DOC#: GPD2017-077