EUV Source Supplier Update, Gigaphoton · EUV Source Supplier Update, Gigaphoton Hakaru Mizoguchi Acknowledgments A part of this work was performed under the management of EUVA in

EUV Source Supplier Update, GigaphotonHakaru Mizoguchi

AcknowledgmentsA part of this work was performed under the A part of this work was performed under the

management of EUVA in the NEDO's R&D Program.management of EUVA in the NEDO's R&D Program.

EUV Source Workshop6 May, 2007

Baltimore, MD, USA

05.May 2007. P2

Introduction - LPP source roadmap and concept

Update of CO2 laser produced Sn plasma source - Laser output power- Sn deposition analysis- System scalability

LPP/EUV future direction to HVM

Summary

OutlineOutline

05.May 2007. P3

1st Mid term2004/9

2nd Mid term2006/3

EUVA Final2008/3

HVM source-12010

planning5.7W 1)

---YAG:1.5kW

10kHz0.9%

Xe-Jet

110W 2) /140W 3)

3s<±0.3%CO2: 10kW

100kHz4%

Sn-Droplet

10W 1)

s<±10%CO2:2.6kW

100kHz0.9%

SnO2 choroid liquid jet

EUV Power (IF)Stability

Laser Laser freq.CE (source)

Target

50W 2)

s <±5%CO2: 7.5kW

100kHz2.5%

Sn-Droplet

LPP Source Roadmap

Technology for <10WTechnology for <10WNd:YAG Laser, Liquid Xe jet

Technology for 115Technology for 115--200W200WCO2 Laser, Sn droplet target

Magnetic field mitigationNote）Primary source to IF EUV transfer efficiency：1) 43% 2) 28% with SPF3) 36% without SPF

EUVA project Gigaphoton

05.May 2007. P4

CO2 laser + Sn LPP light source+ Magnetic field mitigation

Sn target supply

Magnetic field mitigation

IF

High power pulsed CO2 laser system

Pulsed CO2 Laser OSC+cw-CO2 laser AMP

Light Source Concept

High EUV power >115 WEUV StabilityCollector mirror lifetime Low CoG / CoO

Requirement for EUV source for HVM

Original Concepts

05.May 2007. P5

History of technical concept proposal History of technical concept proposal

& technical demonstratio& technical demonstrationn2001: Original Concept of CO2 laser based LPP source.

(Patent applied in 2001)Original Concept of MOPA CO2 laser based LPP source.

(Patent applied in 2001)2002 /09: EUVA light source project start with Gigaphoton, USHIO and Komatsu

2003: Original Concept of Magnetic field ion mitigation (Patent applied in 2004)

2004 /09: EUV 5.7 W IF was demonstrated (Nd:YAG and Xe jet)2006 /03: EUV 10 W IF was demonstrated (CO2 and SnO2 choroid liquid jet)2007 /02: EUV 40 W IF was demonstrated (CO2 and Sn target)2007 /04: EUV 47 W IF was demonstrated (CO2 and Sn target) ←This report

05.May 2007. P6




Summary

OutlineOutline

05.May 2007. P7

Update of CO2 laser produced Sn plasma source

Original concept:CO2 laser + Sn LPP light source for HVM EUVL

Update from Feb. 2007 (Advanced Microlithography @ San Jose)Laser output power

CO2 laser power 6.0 kW 7 kW ← Topic 1System scalability

20-kW single line CO2 system is scalable ← Topic 2Sn deposition analysis

Low density Sn deposition ← Topic 3

05.May 2007. P8

Experimental devices for EUV source development at EUVA

Target ChamberTarget Chamber1. High power experiment device

RF-CO2 laser based systemHigh power laser system developmentTarget developmentHigh power EUV generation

2. Fundamental experiment device

TEA-CO2 laser based systemCE experimentDebris analysisMitigation system development

Component development is drivenby two experimental devices.

05.May 2007. P9

High Power COHigh Power CO22 Laser MOPA SystemLaser MOPA System

■ Laser SystemMain-Amplifier[Fast Axial Gas Flow RF-Excited CO2 laser(CW 15kW)]

Pre-Amplifier[Fast Axial Gas Flow RF-Excited CO2 laser(CW 5kW)]

Oscillator[Wave Guide Q-switched CO2 laser]Repetition rate:100kHzPulse width: 22ns

7 kW

Laser Power： 6kW → 7 kWPulse Width： 22 nsRepetition Rate： 100 kHz

■ Performances

Oscillator

High power experiment deviceTopic 1

05.May 2007. P10

CO2 Laser MOPA System Average Output Power

Amplification Characteristic of Main Amplification Characteristic of Main -- AmpAmp

0

2000

4000

6000

8000

10000

0 500 1000 1500 2000 2500 3000

Input Power [W]

Out

put P

ower

[W]

( to Main-AMP )

Rep. rate: 100 kHzRep. rate: 100 kHzDuty: on 10ms, off 90msDuty: on 10ms, off 90msOperation : Continuous (no time limit)Operation : Continuous (no time limit)

NowNow

High power experiment device

Topic 1

05.May 2007. P11

EUV from high power CO2 laser produced Sn plasma

EUV source power : 110 W (130 W) (2 πsr, 2%bw)

Target ： Rotating Sn plateLaser irradiation power： 5 kW (→ 6 kW)Conversion efficiency (CE)： 2.2 %EUV energy stability : 8% (3σ, 50 pulse)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0 100 200 300 400 500 600 700 800

Number of pulses

EUV

ener

gy [m

J]


Topic 1

05.May 2007. P12

0

20

40

60

80

100

2002 2003 2004 2005 2006 2007 2008Year

IF E

UV

pow

er (W

)

DPPLPP

DPP data based on EUVA / DPP, October 2006

LPP/ EUV Output Power

LPP IF EUV power caught up the 1st gen. Sn base-DPP power level !

Now

1st gen.

Sn base DPP

2nd gen.

Sn base DPP


Transmittance from primary to I/FPrimary source EUV power (2pi sr, 2%bw) 616-702 W 110 W (130 W) Debris shield transmission 0.8 1.0 Collection angle & collector transmission 0.28 0.38 (4 sr, R=0.6) Aperture (etendue limit & SPF) transmission 0.45 0.09 1.0 0.36 Gas transmission 0.9 0.94Usable EUV power after IF 55-62 W 40 W (47 W) w/o SPF

DPP LPP

Topic 1

05.May 2007. P13

Multi 10 kW Short Pulse COMulti 10 kW Short Pulse CO22 laser MOPA systemlaser MOPA system

Power Limitation・Damage of OpticsDamage of Optics

⇒ Short pulse damage threshold lower than CW threshold・Filling FactorFilling Factor

⇒ Laser beam diffraction・SaturationSaturation

⇒ Re-absorption from lower laser level (?)

One beam, 20 kW is reasonable estimate !!Details will be discussed at ….

AMP3RF-excited CO2 laserPumping power : 120 kW

AMP2RF-excited CO2 laserPumping power : 120 kW

AMP1RF-excited CO2 laserPumping : 50 kW

Multi-line OscillatorRep. rate :100kHz

pulse width :20 ns (FWHM)

20 kW(200mJ at 100kHz)

Topic 2

05.May 2007. P14

Sn debris and mitigation

Experimental layout

Droplet debrisSn neutralFast ion

Deposition Minimized by CO2 irradiation

Sputtering Magnetic field mitigation

Debris from Sn laser plasma and mitigation

22.5deg

45deg

75deg

22.5deg

45deg

75deg

60deg

90deg

QCM (Deposition/sputter) Faraday Cup (Ion)

Si witness plate (debris)FC2（EUV energy）

TEA-CO2 laser

22.5deg

45deg

75deg

22.5deg

45deg

75deg

60deg

90deg

QCM (Deposition/sputter) Faraday Cup (Ion)

Si witness plate (debris)FC2（EUV energy）

TEA-CO2 laser

Plasmalens

Faraday-cup array

QCM array Plasmalens

Faraday-cup array

QCM array

Fundamental experiment device

05.May 2007. P15

-1.0E-030.0E+001.0E-032.0E-033.0E-034.0E-035.0E-036.0E-037.0E-038.0E-039.0E-03

0 15 30 45 60 75 90

Observation angle [deg]

sput

ter &

dep

ositi

on ra

te[n

m/m

J]

Nd:YAGCO2

Deposition

Sputtering

CO2 laser is clean LPP driver compared to YAG

Deposition case

Sputter / deposition rate measured by QCM

Deposition

No deposition


Mo/Si sample test

Topic 3

05.May 2007. P16

TEA-CO2 Laser

•Mo/Si mirror sample :10 bilayer•Distance from plasma: 120mm•Angle to laser incidence: 30 degree•Laser pulse energy: 15-25mJ•Laser pulse number: 1.5×105 pulse•Chamber pressure: 5×10-2 Pa

Mo/Si sample mirror test Experimental setup

Mo/Si mirror


TEM class sectional image of the exposed Mo/Si

4-nm uniform Sn deposition

Sn plate

Low density Sn deposition; since the measured reflectivity change is much smaller than the calculated reflectance for 4nm solid Sn.

Topic 3

05.May 2007. P17

CO2

Yag ω

1/100

Cut off density :Nc

1

Laser Electron critical density (cm-3)

CO2 (10.6um) 1.0x1019

Nd:YAG (1.06um)

1.0x1021

CO2 laser light is efficiently absorbed by low density plasma, therefore thermal boiling of Sn (cause of Sn drops creation) is avoided.

Distance0

Elec

tron

dens

ity

Laser

Laser plasma interaction region

X-ray emission

Hot dense plasma

nc

Distance0

Elec

tron

dens

ity

Laser

Laser plasma interaction region

X-ray emission

Hot dense plasma

nc

Efficient EUV is emitted from hot dense plasma near the electron critical density nc.

2

20

c emn ωε

=

)cm(1011.1n 32

21

c−

λ×

= λ: wavelength in μm

CO2 laser is clean LPP driver compared to YAGFundamental experiment device

05.May 2007. P18




Summary

OutlineOutline

05.May 2007. P19

LPP Power RoadmapCE %

Laser kW 2.0 2.2 2.5 3.0 3.5 4.0 4.52.5 14 15 18 21 25 28 32

18 20 23 27 32 36 415.0 28 31 35 42 49 56 63

36 40 45 54 63 72 817.5 42 46 53 63 74 84 95

54 59 68 81 95 108 12210.0 56 62 70 84 98 112 126

72 79 90 108 126 144 162HVM source

Transfer efficiency from primary source to IF

Total Debrisshield

Collectableangle Reflectivity T% SPF

Case1 0.28 0.8 5sr 0.6 0.9 0.8Case2 0.36 1 4sr 0.6 0.94 1

LPP/EUV future direction to HVM (1)

EUV power estimation with laser power & CE

HVM-source

05.May 2007. P20

Mirror lifetime estimation based on Rep.rate : 100kHz, CO2 laser w/o pre-pulse Mirror : Mo/Si 250 bilayer , 22.5deg(worst place) Plasma-mirror distance : 150mm Magnetic field effect :×1000

10

100

1000

0 50 100 150 200 250

IF power [W]

mirr

or li

fetim

e [B

pls]

Lifetime requirements (12months) : 80Bpls@10kHz ⇒ 800Bpls@100kHz

701 Bpls (10.5months)



87 Bpls (1.3months)

Collector mirror lifetime estimation based on this work

Tool duty: 25%

7days 24H operation

LPP/EUV future direction to HVM (2)

HVM-source

05.May 2007. P21

LPP technology update summaryLPP power by EUVA set up – (non-integrated setup)

40W@I/F is achieved at Q4 2006. Now 47W@I/F equivalent!By CO2 laser (6kW→7kW) produced Sn plasmaTarget: solid Sn diskSource power 110 W→130W, 2p sr, 2%bw

20KW driver laser scalability is estimated.

Easier debris mitigation of CO2 laser produced Sn plasma175 Bpls factor 1000 (detection limit)

Estimated number by experimental setup.Need proven data with system demonstration.

Very small damage on collector mirror is observed

For next stageSD (System Demonstration)-SoCoMo is under planning 90W (@ I/F) with CO2 laser and Sn droplet + debris mitigation+ Collector mirror

Documents

EUV Source Supplier Update, Gigaphoton · EUV Source Supplier Update, Gigaphoton Hakaru Mizoguchi Acknowledgments A part of this work was performed under the management of EUVA in