1-Lesson1-Review of Electronic Devices

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    Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Arief Udhiarto, S.T, M.T: Dr. Ratno Nuryadi, M.Eng.

    Source :Professor Nathan Cheung, U.C. Berkeley

    ELECTRONICS DEVICE

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    Schedule

    Lectures: K.108 Tue. 13:00-14.50 AM

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    Relation to Other Courses

    Prerequisite:Simple pn-junction, BJT and MOSFET theory;

    BJT and MOSFET circuit applications. Familiarity with the Bohr atomic model

    Relation to other courses:Electronics Engineering

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    Reading Material

    Primary Text :Semiconductor Device Fundamentals : R. F. Pierret(Addison Wesley, 1996)

    Semiconductor Integrated Circuit ProcessingTechnology : Runyan, Bean (Addison Wesley,1996)

    References Text: Solid State Electronic Devices 4thEdition: B. G.

    Stretman, S. Banerjee (Prentice Hall, 2000) Device Electronics for Integrated Circuits3rdEdition: R. Muller, T. Kamins (Wiley & Sons, 2003)

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    Pre Test

    1. What do you know about insulator,conductor, semiconductor?2. What is the different between unipolar

    device and bipolar device?3. What do you know about MOSFET?

    10 Minutes Only

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    Course Organization

    Semiconductor Physics;

    Metal-Semiconductor Contact

    PN-Junction

    Bipolar Junction Transistor

    MOSFETIC Processing

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    Overview of IC Devices and

    Semiconductor Fundamentals

    Reading Assignment : Pierret Chap 1, Chap 2

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    Applications of Semiconductor

    Devices

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    Semiconductor

    Devices

    draingate

    source

    n+n+

    p - Si

    MOSFET

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    Evolution of Bipolar Junction Transistors

    Point Contact BJT1947

    SiGe BJT2000 Si Nanowire BJT

    2003

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    Today and Tomorrow

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    State-of-the-art Transistor Size

    1m = 10-6m = 10-4 cm = 1000 nm 1 nm =10

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    Advantages of Technology Scaling

    More dies per wafer, lower cost

    Higher-speed devices and circuits

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    Roadmap of Transistor

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    Moore Law (Gordon Moore 1965)

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    The number of trans istors in a

    ch ip w i ll be doubled

    every 18

    months

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    Bulk Si Wafer to IC Chip

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    CZ (Czochralski) Crystal Growth

    http://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTM
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    History

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    1904 Vacuum Tube

    1925 Concept of Field Effect Transistor

    1947Bipolar Transistor1958 Bipolar IC

    1959 MOS Transistor

    1961 IC-MOS Technology

    1972 MOS Microprocessor

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    Conductivity in Solid

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    Resistivity [ cm]

    Conductivity [ cm]

    -1

    10-81018

    10-18 108103

    10-8

    108 10-3

    Ag

    Cu

    Al

    Glass

    Pure

    DiamondQuartz

    Si

    Semiconductors ConductorsInsulators

    GaAs

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    Semiconductors

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    Elemental SemiconductorSi, Ge

    Compound SemiconductorGaAs - Gallium arsenideGaP - Gallium phosphide

    AlAs - Aluminum arsenideAlP - Aluminum phosphideInP - Indium PhosphideZnOZinc OxideCdSeCadmium selenide

    Etc.Alloys

    Si1-xGex, AlxGa1-xAs

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    Important Unit Cells

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    Crystallographic Planes and Si

    http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm
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    Crystallographic Planesand Si

    Wafers

    Silicon wafers are usually cut along the (100)plane with a flat or notch to orient the waferduring IC fabrication

    Miller Indices

    http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm
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    Miller Indices

    Crystallographic Notation

    h: inverse x-interceptk: inverse y-intercept

    l: inverse z-intercept(Intercept values are in multiples of the lattice constant;h, k and l are reduced to 3 integers having the sameratio.)

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    Crystallographic Planes

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    Si (100)

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    Si (111)

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    Si (100) and Si (110)

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    Si (100) and Si (110)

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    Silicon Atom

    1s, 2s, 2p orbitals filled by 10

    electrons 3s, 3p orbitals filled by 4

    electrons

    4 nearest neighborsunit cell length = 5.435 1022atoms/cm3

    diamond cubic structure

    The Si Atom The Si Crystal

    http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm
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    Bohr Model

    http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm
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    Conduction Band and Valence Band

    ElectronPotentialEnergy

    The Simplified Energy Band

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    The Simplified Energy Band

    Diagram

    Semiconductors Insulators and

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    Semiconductors, Insulators, and

    Conductors

    Totally filled band and totally empty bands do not allow

    current flow. (just as there is no motion of liquid in a

    totally filled or totally empty bottle

    Metal conduction band is half-filled Semiconductors have lower Egs than insulators and

    can be doped

    D i f S

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    Density of States

    Density of States at Conduction Band:

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    Density of States at Conduction Band:

    The Greek Theater Analogy

    C t f h l

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    Concept of a hole

    An unoccupied electronic state inthe valence band is called a hole

    Treat as positively charge mobile particle in the semiconductors

    B d M d l f El d H l

    http://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTM
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    Bond Model of Electrons and Holes

    El t d H l

    http://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM
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    Electrons and Holes

    http://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM