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8/10/2019 1-Lesson1-Review of Electronic Devices
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Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Arief Udhiarto, S.T, M.T: Dr. Ratno Nuryadi, M.Eng.
Source :Professor Nathan Cheung, U.C. Berkeley
ELECTRONICS DEVICE
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Schedule
Lectures: K.108 Tue. 13:00-14.50 AM
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Relation to Other Courses
Prerequisite:Simple pn-junction, BJT and MOSFET theory;
BJT and MOSFET circuit applications. Familiarity with the Bohr atomic model
Relation to other courses:Electronics Engineering
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Reading Material
Primary Text :Semiconductor Device Fundamentals : R. F. Pierret(Addison Wesley, 1996)
Semiconductor Integrated Circuit ProcessingTechnology : Runyan, Bean (Addison Wesley,1996)
References Text: Solid State Electronic Devices 4thEdition: B. G.
Stretman, S. Banerjee (Prentice Hall, 2000) Device Electronics for Integrated Circuits3rdEdition: R. Muller, T. Kamins (Wiley & Sons, 2003)
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Pre Test
1. What do you know about insulator,conductor, semiconductor?2. What is the different between unipolar
device and bipolar device?3. What do you know about MOSFET?
10 Minutes Only
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Course Organization
Semiconductor Physics;
Metal-Semiconductor Contact
PN-Junction
Bipolar Junction Transistor
MOSFETIC Processing
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Overview of IC Devices and
Semiconductor Fundamentals
Reading Assignment : Pierret Chap 1, Chap 2
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Applications of Semiconductor
Devices
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Semiconductor
Devices
draingate
source
n+n+
p - Si
MOSFET
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Evolution of Bipolar Junction Transistors
Point Contact BJT1947
SiGe BJT2000 Si Nanowire BJT
2003
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Today and Tomorrow
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State-of-the-art Transistor Size
1m = 10-6m = 10-4 cm = 1000 nm 1 nm =10
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Advantages of Technology Scaling
More dies per wafer, lower cost
Higher-speed devices and circuits
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Roadmap of Transistor
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Moore Law (Gordon Moore 1965)
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The number of trans istors in a
ch ip w i ll be doubled
every 18
months
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Bulk Si Wafer to IC Chip
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CZ (Czochralski) Crystal Growth
http://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH05/CZ.HTM8/10/2019 1-Lesson1-Review of Electronic Devices
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History
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1904 Vacuum Tube
1925 Concept of Field Effect Transistor
1947Bipolar Transistor1958 Bipolar IC
1959 MOS Transistor
1961 IC-MOS Technology
1972 MOS Microprocessor
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Conductivity in Solid
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Resistivity [ cm]
Conductivity [ cm]
-1
10-81018
10-18 108103
10-8
108 10-3
Ag
Cu
Al
Glass
Pure
DiamondQuartz
Si
Semiconductors ConductorsInsulators
GaAs
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Semiconductors
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Elemental SemiconductorSi, Ge
Compound SemiconductorGaAs - Gallium arsenideGaP - Gallium phosphide
AlAs - Aluminum arsenideAlP - Aluminum phosphideInP - Indium PhosphideZnOZinc OxideCdSeCadmium selenide
Etc.Alloys
Si1-xGex, AlxGa1-xAs
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Important Unit Cells
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Crystallographic Planes and Si
http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm8/10/2019 1-Lesson1-Review of Electronic Devices
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Crystallographic Planesand Si
Wafers
Silicon wafers are usually cut along the (100)plane with a flat or notch to orient the waferduring IC fabrication
Miller Indices
http://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/kristalograpi2.htm8/10/2019 1-Lesson1-Review of Electronic Devices
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Miller Indices
Crystallographic Notation
h: inverse x-interceptk: inverse y-intercept
l: inverse z-intercept(Intercept values are in multiples of the lattice constant;h, k and l are reduced to 3 integers having the sameratio.)
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Crystallographic Planes
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Si (100)
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Si (111)
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Si (100) and Si (110)
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Si (100) and Si (110)
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Silicon Atom
1s, 2s, 2p orbitals filled by 10
electrons 3s, 3p orbitals filled by 4
electrons
4 nearest neighborsunit cell length = 5.435 1022atoms/cm3
diamond cubic structure
The Si Atom The Si Crystal
http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm8/10/2019 1-Lesson1-Review of Electronic Devices
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Bohr Model
http://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htmhttp://localhost/var/www/apps/conversion/bab1/bab1/hidrogen2.htm8/10/2019 1-Lesson1-Review of Electronic Devices
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Conduction Band and Valence Band
ElectronPotentialEnergy
The Simplified Energy Band
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The Simplified Energy Band
Diagram
Semiconductors Insulators and
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Semiconductors, Insulators, and
Conductors
Totally filled band and totally empty bands do not allow
current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
Metal conduction band is half-filled Semiconductors have lower Egs than insulators and
can be doped
D i f S
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Density of States
Density of States at Conduction Band:
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Density of States at Conduction Band:
The Greek Theater Analogy
C t f h l
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Concept of a hole
An unoccupied electronic state inthe valence band is called a hole
Treat as positively charge mobile particle in the semiconductors
B d M d l f El d H l
http://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTM8/10/2019 1-Lesson1-Review of Electronic Devices
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Bond Model of Electrons and Holes
El t d H l
http://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/SEMICON.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM8/10/2019 1-Lesson1-Review of Electronic Devices
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Electrons and Holes
http://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTMhttp://localhost/Solar%20Sel/PVCDROM/CH02/EG.HTM